Film adhesive, dicing die bonding two-in-one film, semiconductor device, and manufacturing method for same

Abstract

Disclosed is a film adhesive containing a thermosetting resin component, an elastomer, and an inorganic filler. The inorganic filler is composed of a substance having a thermal conductivity at 20°C of 10-2000 W / (m·K). The amount of the inorganic filler is 50-85 mass% based on the total amount of the film adhesive. The elongation at break measured under the condition of a tensile speed of 100 mm / min at 25°C is 150% or more.

Description

Film-like adhesive, dicing and die bonding integrated film, semiconductor device and method for manufacturing the same.

[0001] This disclosure relates to a film-like adhesive, a dicing-die bonding integrated film, and a semiconductor device and a method for manufacturing the same.

[0002] Conventionally, semiconductor devices are manufactured through the following process. First, a semiconductor wafer is attached to a dicing adhesive sheet (dicing film), and in this state, the semiconductor wafer is separated into individual semiconductor chips (dicing process). Subsequently, a pickup process, a crimping process, and a die bonding process are carried out. Patent Document 1 discloses an adhesive film (dicing / die bonding integrated film) that has the function of fixing the semiconductor wafer in the dicing process and the function of bonding the semiconductor chip to the substrate in the die bonding process. By separating the semiconductor wafer and the adhesive layer in the dicing process, semiconductor chips with adhesive pieces can be obtained.

[0003] In recent years, devices called power semiconductor devices, which control power and perform other functions, have become widespread. Power semiconductor devices tend to generate heat due to the supplied current, and therefore require excellent heat dissipation. Patent document 2 discloses a film-like adhesive that has higher heat dissipation after curing than before curing.

[0004] Japanese Patent Publication No. 2008-218571 Japanese Patent Publication No. 2016-103524

[0005] Incidentally, with the miniaturization of semiconductor devices, film adhesives are required to not only enable the manufacture of semiconductor devices with excellent heat dissipation, but also to have excellent processability for die-cutting into desired shapes (for example, circular shapes). However, conventional film adhesives do not achieve high levels of both heat dissipation and processability, and there is still room for improvement.

[0006] Therefore, the main objective of this disclosure is to provide a film-like adhesive that enables the manufacture of semiconductor devices with excellent heat dissipation properties and also exhibits excellent processability.

[0007] This disclosure provides a film-like adhesive as described in [1] to

[12] , a dicing-die bonding integrated film as described in

[13] to

[15] , a semiconductor device as described in

[16] and

[17] , and a method for manufacturing a semiconductor device as described in

[18] to

[22] . [1] A film-like adhesive comprising a thermosetting resin component, an elastomer, and an inorganic filler, wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 2000 W / (m·K) at 20°C, the content of the inorganic filler is 50 to 85% by mass based on the total amount of the film-like adhesive, and the elongation at break measured at a tensile speed of 100 mm / min at 25°C is 150% or more. [2] The film-like adhesive as described in [1], wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 600 W / (m·K) at 20°C. [3] The film-like adhesive according to [1], wherein the inorganic filler is composed of at least one substance selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, and silicon carbide. [4] The film-like adhesive according to any one of [1] to [3], wherein the thermosetting resin component comprises an epoxy resin and a phenolic resin. [5] The film-like adhesive according to [4], wherein the epoxy resin comprises a liquid epoxy resin that is liquid at 30°C and a solid epoxy resin that is solid at 30°C. [6] The film-like adhesive according to [5], wherein the content of the liquid epoxy resin is 2 to 10% by mass based on the total amount of the film-like adhesive. [7] The film-like adhesive according to [5] or [6], wherein the content of the solid epoxy resin is 0.1 to 2% by mass based on the total amount of the film-like adhesive. [8] The film-like adhesive according to any one of [4] to [7], wherein the content of the phenolic resin is 3 to 12% by mass based on the total amount of the film-like adhesive. [9] The film-like adhesive according to any one of [1] to [8], wherein the average particle size of the inorganic filler is 0.1 to 5 μm.

[10] The film-like adhesive according to any one of [1] to [9], wherein the elastomer content is 1 to 20% by mass based on the total amount of the film-like adhesive.

[11] A film-like adhesive according to any one of [1] to

[10] , wherein the thermal conductivity at 35°C after heat curing at 110°C for 1 hour and at 170°C for 3 hours is 0.8 W / (m·K) or more.

[12] A film-like adhesive according to any one of [1] to

[11] , wherein the thickness is 50 μm or less.

[13] A dicing-die bonding integrated film comprising, in this order, a base layer, an adhesive layer, and an adhesive layer made of the film-like adhesive according to any one of [1] to

[12] .

[14] The dicing-die bonding integrated film according to

[13] , wherein the adhesive layer contains an ultraviolet-curable adhesive.

[15] An illuminance of 100 mW / cm for the adhesive layer. ２ and irradiation dose of 150 mJ / cm² ２

[14] A dicing-die bonding integrated film according to

[14] , wherein, after irradiation with ultraviolet light, the peel strength of the adhesive layer to the adhesive layer after ultraviolet irradiation is 0.15 N / 25 mm or less, measured under the conditions of peel angle of 90° and tensile speed of 300 mm / min at 25°C.

[16] A semiconductor device comprising: a first semiconductor chip; a support member on which the first semiconductor chip is mounted; and a cured product of a film-like adhesive according to any one of [1] to

[12] provided between the first semiconductor chip and the support member, and bonding the first semiconductor chip and the support member.

[17] A semiconductor device according to

[16] , further comprising a second semiconductor chip different from the first semiconductor chip, laminated on the surface of the first semiconductor chip. A method for manufacturing a semiconductor device, comprising: a step of producing a plurality of adhesive-piece semiconductor chips, each having a semiconductor chip and an adhesive piece formed by the individualization of the adhesive layer attached to the semiconductor chip, on the adhesive layer of the dicing-die bonding integrated film described in

[18] and

[13] ; and a step of bonding a first adhesive-piece semiconductor chip, which has a first semiconductor chip and a first adhesive piece, to a support member via the first adhesive piece.

[19] The method for manufacturing a semiconductor device according to

[18] , further comprising a step of thermally curing the first adhesive piece on the first adhesive-piece semiconductor chip at a temperature of 60 to 200°C for 30 minutes to 5 hours.

[20] The method for manufacturing a semiconductor device according to

[18] , further comprising a step of bonding a second adhesive-piece semiconductor chip, which has a second semiconductor chip and a second adhesive piece, to the surface of the first semiconductor chip on the first adhesive-piece semiconductor chip bonded to the support member via the second adhesive piece.

[21] The method for manufacturing a semiconductor device according to

[20] , further comprising the step of thermally curing the first adhesive piece in the first adhesive piece-attached semiconductor chip and the second adhesive piece in the second adhesive piece-attached semiconductor chip at a temperature of 60 to 200°C for 30 minutes to 5 hours.

[22] A method for manufacturing a semiconductor device, comprising the step of interposing a film-like adhesive described in any of [1] to

[12] between a first semiconductor chip and a support member, or between a first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, to bond the first semiconductor chip and the support member, or the first semiconductor chip and the second semiconductor chip.

[0008] This disclosure provides a film-like adhesive that enables the manufacture of semiconductor devices with excellent heat dissipation properties and also exhibits excellent processability. Furthermore, this disclosure provides a dicing-die bonding integrated film using such a film-like adhesive. Moreover, this disclosure provides a semiconductor device and a method for manufacturing the same using such a film-like adhesive or a dicing-die bonding integrated film.

[0009] Figure 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive. Figure 2 is a schematic cross-sectional view showing one embodiment of a dicing-die bonding integrated film. Figure 3 is a schematic cross-sectional view showing one embodiment of a semiconductor device manufacturing method. Figures 3(a), (b), (c), (d), (e), and (f) are schematic cross-sectional views showing each step. Figure 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. Figure 5 is a schematic cross-sectional view showing another embodiment of a semiconductor device. Figure 6 is a schematic cross-sectional view showing another embodiment of a semiconductor device.

[0010] Embodiments of the present disclosure will be described below with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative relationships of the sizes of the components are not limited to those shown in each figure.

[0011] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers listed before and after "~" as the minimum and maximum values, respectively. In numerical ranges described stepwise in this specification, the upper or lower limit of one step in the numerical range may be replaced with the upper or lower limit of another step in the numerical range. Also, in numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. Furthermore, the upper and lower limits described individually can be combined in any way. Also, "A or B" means that either A or B is included, or both are included. Furthermore, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more. The content of each component in the composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified.

[0012] In this specification, (meth)acrylic acid ester means acrylic acid ester or the corresponding methacrylic acid ester. The same applies to other similar expressions such as (meth)acrylate and (meth)acrylic acid.

[0013] In this specification, "solid at 30°C" means that the melting point or softening point is 30°C or higher, or, if the substance does not have a melting point or softening point, the viscosity measured at 30°C is 3000 Pa·s or higher. "Liquid at 30°C" means that the melting point or softening point is less than 30°C, or, if the substance does not have a melting point or softening point, the viscosity measured at 30°C is less than 3000 Pa·s. The softening point refers to the value measured by the ring-and-ball method in accordance with JIS K7234:1986, JIS K6910:2007, etc. The viscosity measured at 30°C refers to the value measured using an E-type viscometer or a B-type viscometer for the component (compound) held at 30°C.

[0014] [Film-like adhesive] Figure 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive. The film-like adhesive 10A shown in Figure 1 is thermosetting and goes through a semi-cured (B stage) state to a (fully) cured (C stage) state after curing treatment. The film-like adhesive 10A may be provided on a support film 20 as shown in Figure 1. The film-like adhesive 10A may be a die bonding film (die attach film) used for bonding a semiconductor chip to a support member or to semiconductor chips to each other.

[0015] The support film 20 is not particularly limited, but examples include films made of polyester, polyethylene, polypropylene, polyethylene terephthalate, polyimide, polyetherimide, polyethylene naphthalate, polymethylpentene, and polytetrafluoroethylene. The support film 20 may be a multilayer film made by combining two or more types of films. The support film 20 may be surface-treated with a release agent such as a silicone-based or silane-based agent. The support film 20 may be surface-treated with UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc. The thickness of the support film 20 may be, for example, 10 to 200 μm or 20 to 170 μm.

[0016] The film-like adhesive 10A contains a thermosetting resin component (hereinafter sometimes referred to as "component (A)"), an elastomer (hereinafter sometimes referred to as "component (B)"), and an inorganic filler (hereinafter sometimes referred to as "component (C)"). Component (A) may include, for example, an epoxy resin (hereinafter sometimes referred to as "component (A1)") and a phenolic resin (hereinafter sometimes referred to as "component (A2)"). In addition to components (A), (B), and (C), the film-like adhesive 10A may further contain a coupling agent (hereinafter sometimes referred to as "component (D)"), a curing accelerator (hereinafter sometimes referred to as "component (E)"), and other components.

[0017] In the film-like adhesive 10A, the elongation at break measured under the condition of a tensile speed of 100 mm / min at 25°C is 150% or more. When the elongation at break is 150% or more, it tends to have excellent processability for die-cutting into a desired shape (e.g., a circular shape). The processing step for the film-like adhesive includes a cutting step in which the film-like adhesive is die-cut (pre-cut) into a desired shape, and a peeling step in which the unnecessary portion of the film-like adhesive is peeled off from one side of the support film based on the cutting line created by die-cutting. The reason for these effects is not entirely clear, but the inventors believe that the effect on the peeling step is significant. That is, they believe that the elongation at break when stress is applied to peel the film-like adhesive is sufficiently large, making it less likely for the unnecessary portion to break during winding. The elongation at break may be, for example, 160% or more, 170% or more, 180% or more, 190% or more, or 200% or more. The elongation at break may be, for example, 700% or less, 600% or less, or 500% or less.

[0018] In this specification, the elongation at break of a film-like adhesive at 25°C can be measured, for example, by the following method. A sample for measurement is prepared by punching out a dumbbell-shaped No. 1 tensile test specimen from a film-like adhesive in the B-stage state using an SD-type lever-type sample cutter and removing the support film. The thickness of the film-like adhesive can be, for example, 1 to 30 μm. The sample is mounted on a high-speed tensile testing machine (e.g., RTF-1250-HS-PL, A&D Co., Ltd.) using a jig to ensure that the distance between the chucks is maintained, and the measurement is performed under the following conditions. From the measurement results, the film length at the point where the film breaks is read, and the elongation at break of the film-like adhesive is calculated using formula (1). Elongation at break (%) = [(Gauge length after test (mm) - Gauge length (mm)) / Gauge length (mm)] × 100 ... (1) (Conditions) Load cell: 50N Distance between chucks: 100mm Gauge length: 40mm Tensile speed: 100mm / min Measurement temperature: 25℃

[0019] For example, the elongation at break can be increased by employing the following methods: - Reduce the content of component (A2) in the film adhesive. - Increase the content of component (B) in the film adhesive. - Reduce the content of component (C) in the film adhesive.

[0020] Furthermore, since the dominant effect is to reduce the content of component (A2) in the film-like adhesive, even if the content of component (C) in the film-like adhesive is high, the desired elongation at break can be achieved by adjusting the other components.

[0021] (A) component: thermosetting resin component; (A1) component: epoxy resin. Component (A1) can be used without particular limitations as long as it has an epoxy group in its molecule. Examples of component (A1) include bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S type epoxy resin; phenol novolac type epoxy resin; cresol novolac type epoxy resin; bisphenol A novolac type epoxy resin; bisphenol F novolac type epoxy resin; stilbene type epoxy resin; triazine skeleton-containing epoxy resin; fluorene skeleton-containing epoxy resin; triphenolmethane type epoxy resin; biphenyl type epoxy resin; xylylene type epoxy resin; biphenyl aralkyl type epoxy resin; naphthalene type epoxy resin; and diglycidyl ether compounds of polycyclic aromatics such as polyfunctional phenols and anthracenes. Among these, component (A1) may include cresol novolac type epoxy resin, bisphenol F type epoxy resin, or bisphenol A type epoxy resin from the viewpoint of the film's tackiness, flexibility, etc. Bisphenol F type epoxy resins, for example, often have a relatively low softening point and are liquid at 30°C.

[0022] Component (A1) may contain a liquid epoxy resin that is liquid at 30°C (hereinafter sometimes referred to as "component (A1a)"). Component (A1) may be a combination of component (A1a) and a solid epoxy resin that is solid at 30°C (hereinafter sometimes referred to as "component (A1b)"). Component (A1) tends to have an easier time improving the storage modulus after curing by containing component (A1a). In addition, component (A1) tends to have an easier time achieving thin films by being a combination of component (A1a) and component (A1b).

[0023] Examples of commercially available products of component (A1a) include YDF-8170C (product name, manufactured by Nippon Steel Chemical & Material Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent: 165 g / eq) and EXA-830CRP (product name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 159 g / eq).

[0024] Examples of commercially available components of (A1b) include YDCN-700-10 (product name, manufactured by Nippon Steel Chemical & Material Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent: 210 g / eq, softening point: 80°C), N-500P-10 (product name, manufactured by DIC Corporation, cresol novolac type epoxy resin, epoxy equivalent: 204 g / eq, softening point: 84°C), HP-4710 (product name, manufactured by DIC Corporation, naphthalene type epoxy resin, epoxy equivalent: 170 g / eq, softening point: 95°C), and NC-7000L (product name, manufactured by Nippon Kayaku Co., Ltd., naphthalene type epoxy resin, epoxy equivalent: 230 g / eq, softening point: 88°C).

[0025] The epoxy equivalent of component (A1) is not particularly limited, but may be 80-350 g / eq, 100-300 g / eq, or 120-250 g / eq. The epoxy equivalent of component (A1) can be measured, for example, by potentiometric titration in accordance with JIS K7236:2009. Alternatively, the epoxy equivalent of component (A1) may be taken from, for example, the manufacturer's catalog value.

[0026] The softening point of component (A1) can be measured, for example, by the ring-and-ball method in accordance with JIS K7234:1986. Alternatively, the softening point of component (A1) may be taken from, for example, the manufacturer's catalog value.

[0027] When component (A1) is a combination of component (A1a) and component (A1b), the content of component (A1a) may be 60% by mass or more, 70% by mass or more, or 75% by mass or more, and 95% by mass or less, 90% by mass or less, or 85% by mass or less, based on the total amount of component (A1). The content of component (A1a) in component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0028] If component (A1) is a combination of component (A1a) and component (A1b), the content of component (A1a) may be 2 to 10% by mass based on the total amount of the film-like adhesive. The content of component (A1a) may be 3% or more by mass, 4% or more by mass, or 5% or more by mass, and may be 9% or less by mass, 8% or less by mass, or 7% or less by mass, based on the total amount of the film-like adhesive. The content of component (A1a) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0029] When component (A1) is a combination of component (A1a) and component (A1b), the content of component (A1b) may be 5% by mass or more, 10% by mass or more, or 15% by mass or more, and may be 40% by mass or less, 30% by mass or less, or 25% by mass or less, based on the total amount of component (A1). The content of component (A1b) in component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0030] If component (A1) is a combination of component (A1a) and component (A1b), the content of component (A1b) may be 0.1 to 2% by mass based on the total amount of the film-like adhesive. The content of component (A1b) may be 0.3% by mass or more, 0.5% by mass or more, or 0.7% by mass or more, and may be 1.9% by mass or less, 1.8% by mass or less, or 1.7% by mass or less, based on the total amount of the film-like adhesive. The content of component (A1b) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0031] The content of component (A1) (the sum of components (A1a) and (A1b)) may be 2% by mass or more, 4% by mass or more, or 6% by mass or more, based on the total amount of the film-like adhesive. When the content of component (A1) is within this range, it tends to be easier to improve the storage modulus after curing. The content of component (A1) may be 15% by mass or less, 12% by mass or less, or 10% by mass or less, based on the total amount of the film-like adhesive, since the content of component (C) can be sufficiently ensured. The content of component (A1) (the sum of components (A1a) and (A1b)) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0032] • Component (A2): Phenolic resin. Component (A2) is a component that acts as a curing agent for component (A1), i.e., it can be a curing agent for epoxy resin. By containing component (A2) in the film adhesive, the film adhesive can be highly crosslinked, improving the storage modulus after curing.

[0033] (A2) Component (A2) can be used without particular limitation as long as it has a phenolic hydroxyl group in its molecule. Examples of (A2) component include novolac-type phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene with compounds having an aldehyde group such as formaldehyde under an acidic catalyst; phenolic aralkyl resins synthesized from phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolac, phenol and / or naphthols with dimethoxyp-xylene or bis(methoxymethyl)biphenyl; naphthol aralkyl resins; biphenyl aralkyl-type phenolic resins; and phenyl aralkyl-type phenolic resins. Among these, the phenolic resin may include novolac-type phenolic resin or phenyl aralkyl-type phenolic resin.

[0034] (A2) Examples of commercially available components include MEH-7500 (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Co., Ltd.), trisphenylmethane-type phenol novolac resin, hydroxyl group equivalent: 97 g / eq, softening point: 110°C), H-4 (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Co., Ltd.), phenylaralkyl-type phenol resin, hydroxyl group equivalent: 105 g / eq, softening point: 69°C), PSM-4326 (product name, manufactured by Gun-ei Chemical Industry Co., Ltd., phenol novolac resin, hydroxyl group equivalent: 105 g / eq, softening point: 120°C), HF-1M (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Co., Ltd.), phenol novolac resin, hydroxyl group equivalent: 106 g / eq, softening point: 84°C), H Examples include F-3M (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), phenol novolac resin, hydroxyl group equivalent: 107 g / eq, softening point: 96°C), MEH-7800-4S (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), xylylene-type phenol resin, hydroxyl group equivalent: 173 g / eq, softening point: 63°C), MEH-7800M (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), phenyl aralkyl-type phenol resin, hydroxyl group equivalent: 174 g / eq, softening point: 82°C), MEHC-7851SS (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), biphenyl-type phenol novolac resin, hydroxyl group equivalent: 203 g / eq, softening point: 67°C).

[0035] The hydroxyl group equivalent of component (A2) may be 70 to 300 g / eq, 90 to 280 g / eq, or 110 to 260 g / eq. The hydroxyl group equivalent of component (A2) can be measured, for example, by titration using the acetylation method with acetic anhydride. Alternatively, the hydroxyl group equivalent of component (A2) may be taken from, for example, the manufacturer's catalog value.

[0036] (A2) The softening point of component (A2) is not particularly limited, but may be, for example, 150°C or lower, 130°C or lower, 110°C or lower, or 90°C or lower. The upper limit of the softening point of component (A2) may be, for example, 50°C or higher, 60°C or higher, or 65°C or higher. The softening point of component (A2) can be measured, for example, by the ring-and-ball method in accordance with JIS K6910:2007. The softening point of component (A2) may be, for example, the catalog value from the distributor.

[0037] The ratio of the epoxy equivalent of the (A1) component to the hydroxyl equivalent of the (A2) component ((epoxy equivalent of the (A1) component / hydroxyl equivalent of the (A2) component)) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45 from the viewpoint of curability. When the equivalent ratio is 0.30 / 0.70 or more, there is a tendency to obtain more sufficient curability. When the equivalent ratio is 0.70 / 0.30 or less, it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity.

[0038] The content of the (A2) component may be 3 to 12% by mass based on the total amount of the film-like adhesive. Since the content of the (A2) component tends to more easily improve the storage elastic modulus after curing, it may be 4% by mass or more, 5% by mass or more, or 6% by mass or more based on the total amount of the film-like adhesive. Since the content of the (A2) component can sufficiently ensure the content of the (C) component, it may be 11% by mass or less, 10.5% by mass or less, or 10% by mass or less based on the total amount of the film-like adhesive. Note that the content of the (A2) component in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0039] The content of the (A) component (the total of the (A1) component and the (A2) component) may be 4% by mass or more, 8% by mass or more, or 12% by mass or more based on the total amount of the film-like adhesive. When the content of the (A) component is in such a range, there is a tendency to more easily improve the storage elastic modulus after curing. Since the content of the (A) component can sufficiently ensure the content of the (C) component, it may be 30% by mass or less, 24% by mass or less, or 20% by mass or less based on the total amount of the film-like adhesive. Note that the content of the (A) component (the total of the (A1) component and the (A2) component) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0040] (B) Component: Elastomer Component (B) can be a thermoplastic resin, or a resin that is thermoplastic at least in its uncured state and forms a crosslinked structure after heating. Component (B) may be a (meth)acrylic copolymer having reactive groups (hereinafter sometimes referred to as "reactive group-containing (meth)acrylic copolymer") from the viewpoint of excellent shrinkage, heat resistance, and stress relaxation.

[0041] Examples of (meth)acrylic copolymers include (meth)acrylic acid ester copolymers such as acrylic glass and acrylic rubber. The (meth)acrylic copolymer may be acrylic rubber. The acrylic rubber may be mainly composed of acrylic acid ester and formed by copolymerization of (meth)acrylic acid ester and monomers selected from acrylonitrile.

[0042] Examples of (meth)acrylic acid esters include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, hexyl (meth)acrylate, cyclohexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and lauryl (meth)acrylate. Examples of (meth)acrylic acid ester copolymers include copolymers containing butyl acrylate and acrylonitrile as copolymer components, and copolymers containing ethyl acrylate and acrylonitrile as copolymer components.

[0043] A reactive group-containing (meth)acrylic copolymer may be a reactive group-containing (meth)acrylic copolymer that contains a reactive group-containing (meth)acrylic monomer as a copolymer component. Such a reactive group-containing (meth)acrylic copolymer can be obtained by copolymerizing a monomer mixture containing a reactive group-containing (meth)acrylic monomer and the above monomer.

[0044] Examples of reactive groups that improve heat resistance include epoxy groups, carboxyl groups, (meth)acryloyl groups, hydroxyl groups, and episulfide groups. The reactive group may be an epoxy group or a carboxyl group from the viewpoint of crosslinking.

[0045] In this embodiment, the reactive group-containing (meth)acrylic copolymer may be an epoxy group-containing (meth)acrylic copolymer containing an epoxy group-containing (meth)acrylic monomer as a copolymer component. In this case, examples of epoxy group-containing (meth)acrylic monomers include glycidyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate glycidyl ether, and 3,4-epoxycyclohexylmethyl (meth)acrylate. From the viewpoint of heat resistance, the reactive group-containing (meth)acrylic monomer may be glycidyl (meth)acrylate.

[0046] The glass transition temperature (Tg) of component (B) is, for example, -50 to 20°C, or it may be -30 to 15°C. If the Tg of component (B) is -50°C or higher, it is easier to suppress the film-like adhesive from becoming excessively soft, and excellent handling properties and adhesive strength can be achieved. On the other hand, if the Tg of component (B) is 20°C or lower, it is easier to ensure the flexibility of the film-like adhesive, and excellent adhesive strength can be achieved. In addition, even if there are irregularities on the adherend surface, the film-like adhesive can easily follow the irregularities, and excellent adhesive strength can be achieved.

[0047] The Tg of component (B) is the intermediate glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of component (B) is the intermediate glass transition temperature calculated by measuring the heat change under the conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C, using a method in accordance with JIS K7121:1987. If component (B) is a commercially available product, the value listed in the catalog may be used.

[0048] The weight-average molecular weight of component (B) may be between 100,000 and 2,000,000. A weight-average molecular weight of 100,000 or more makes it easier to ensure heat resistance. On the other hand, a weight-average molecular weight of 2,000,000 or less makes it easier to suppress the decrease in flow and adhesion. The weight-average molecular weight of component (B) may be between 400,000 and 1,500,000 or between 500,000 and 1,200,000. The weight-average molecular weight is the polystyrene equivalent value obtained using a calibration curve with standard polystyrene in gel permeation chromatography (GPC). If multiple peaks are observed in GPC, the weight-average molecular weight attributable to the peak with the highest peak intensity is defined as the weight-average molecular weight in this specification.

[0049] Examples of commercially available components (B) include SG-P3, SG-80H (both manufactured by Nagase ChemteX Corporation), and KH-CT-865 (manufactured by Resonaq Corporation).

[0050] The content of component (B) may be, for example, 1 to 20% by mass, 2 to 15% by mass, or 3 to 12% by mass, based on the total amount of the film-like adhesive. When the content of component (B) is within the above range, the content of component (C) can be sufficiently ensured, shrinkage associated with the thermal curing of the film-like adhesive can be suppressed, and excellent adhesion after thermal curing tends to be easily achieved. The content of component (B) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0051] (C) Component: Inorganic filler Component (C) is a component that enhances heat dissipation when a film-like adhesive is applied to a semiconductor device. Component (C) is a filler composed of a substance with a thermal conductivity (at 20°C) of 10 to 2000 W / (m·K). If component (C) is such a filler, heat dissipation can be further enhanced.

[0052] Examples of materials with a thermal conductivity (at 20°C) of 10 to 2000 W / (m·K) include oxides such as aluminum oxide (alumina, thermal conductivity (20°C): 30 W / (m·K)), zinc oxide (thermal conductivity (20°C): 60 W / (m·K)), and magnesium oxide (thermal conductivity (20°C): 50 W / (m·K)), as well as boron nitride (thermal conductivity (20°C) of hexagonal boron nitride (h-BN): 60 W / (m·K) (representative value for sintered bodies. The crystal has high anisotropy). The thermal conductivity reaches several hundred W / (m·K) in the in-plane direction. Other examples include cubic boron nitride (c-BN) with a thermal conductivity of 300 W / (m·K) at 20°C (high-quality materials exceeding 1000 W / (m·K)), aluminum nitride (thermal conductivity at 20°C: 160 W / (m·K)), silicon nitride (thermal conductivity at 20°C: 25 W / (m·K)), diamond (thermal conductivity at 20°C: 2000 W / (m·K)), silicon carbide (thermal conductivity at 20°C: Carbides such as 195 W / (m·K), silver (thermal conductivity (20°C): 430 W / (m·K)), copper (thermal conductivity (20°C): 400 W / (m·K)), gold (thermal conductivity (20°C): 320 W / (m·K)), aluminum (thermal conductivity (20°C): 240 W / (m·K)), magnesium (thermal conductivity (20°C): 160 W / (m·K)), tungsten (thermal conductivity (20°C): 170 W / (m·K)), molybdenum (thermal conductivity (20°C): 1 Examples of metals with thermal conductivity include 40 W / (m·K), zinc (thermal conductivity (20°C): 120 W / (m·K)), nickel (thermal conductivity (20°C): 90 W / (m·K)), iron (thermal conductivity (20°C): 80 W / (m·K)), platinum (thermal conductivity (20°C): 70 W / (m·K)), tin (thermal conductivity (20°C): 70 W / (m·K)), lead (thermal conductivity (20°C): 35 W / (m·K)), and titanium (thermal conductivity (20°C): 20 W / (m·K)).

[0053] Component (C) may, in one embodiment, be a filler composed of a substance having a thermal conductivity (at 20°C) of 10 to 600 W / (m·K). The thermal conductivity (at 20°C) may be, for example, 20 W / (m·K) or more, and may be 500 W / (m·K) or less, 400 W / (m·K) or less, 300 W / (m·K) or less, 200 W / (m·K) or less, 150 W / (m·K) or less, 120 W / (m·K) or less, 100 W / (m·K) or less, 80 W / (m·K) or less, 60 W / (m·K) or less, or 40 W / (m·K) or less.

[0054] Component (C) may, in one embodiment, be a filler composed of at least one substance selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, and silicon carbide, or it may be a filler composed of at least one substance selected from the group consisting of aluminum oxide, magnesium oxide, boron nitride, and aluminum nitride. Component (C) may, for example, be an aluminum oxide (alumina) filler.

[0055] The aluminum oxide (alumina) filler may be composed of alumina with a purity of 99.0% by mass or higher and low chlorine content, from the viewpoint of further improving thermal conductivity after heat curing and preventing electromigration during semiconductor device operation. Examples of commercially available alumina fillers include AA-03NF, AA-03N, AA-04N, AA-05N, AA-07N, AA-1.5N, AA-2N, AA-3N, AA-5N (product names, manufactured by Sumitomo Chemical Co., Ltd.), A2-SP-C3, A2-SP-C6, and A2-SP-C7 (product names, manufactured by Admatex Co., Ltd.). The alumina filler may be composed of α-alumina with a purity of 99.0% by mass or higher.

[0056] The magnesium oxide filler may be a filler composed of magnesium oxide with a purity of 95.0% by mass or higher. An example of a commercially available magnesium oxide filler of this type is RF-10C (trade name, manufactured by Ube Materials Co., Ltd.). The purity of the magnesium oxide may be, for example, 100% by mass or less.

[0057] From the viewpoint of further improving thermal conductivity after heat curing, the boron nitride filler may be composed of hexagonal boron nitride (h-BN) with a purity of 99.0% by mass or higher as BN. Examples of commercially available high-purity hexagonal boron nitride (h-BN) fillers include HP-P1, HP-4W (product names, manufactured by Mizushima Iron Alloy Co., Ltd.), and UHP-S1 (product name, manufactured by Resonac Co., Ltd.).

[0058] Aluminum nitride filler is, for example, 3-4 g / cm³. ３ The filler may have a density of . Examples of such aluminum nitride fillers include Shapeal H grade, Shapeal E grade (product names, manufactured by Tokuyama Corporation), and ALN020BF (product name, manufactured by Tomoe Engineering Co., Ltd.).

[0059] The shape of component (C) is not particularly limited and may be, for example, flake-shaped, needle-shaped, spherical, etc., and may be spherical. When component (C) is spherical, the surface roughness (Ra) of the film-like adhesive tends to be easily improved.

[0060] The average particle size of component (C) may be 0.1 to 5 μm. When the average particle size of component (C) is 0.1 μm or more, it tends to have the following effects: it can prevent viscosity increase when preparing adhesive varnish, it can contain a desired amount of component (C) in the film-like adhesive, and it can ensure the wettability of the film-like adhesive to the adherend, resulting in better adhesive strength. When the average particle size of component (C) is 5 μm or less, it is possible to further improve film moldability and heat dissipation by adding component (C). In addition, when the average particle size of component (C) is 5 μm or less, the thickness of the film-like adhesive can be made thinner, further increasing the stacking of semiconductor chips, and it is possible to further prevent the occurrence of cracks in semiconductor chips due to component (C) protruding from the film-like adhesive. The average particle size of component (C) may be 4.5 μm or less or 4 μm or less, and may be 0.1 μm or more or 0.2 μm or more.

[0061] In this specification, the average particle size of component (C) is the particle size when its ratio (volume fraction) to the total volume of component (C) is 50% (Laser 50% particle size (D) ５０ )) means. Average particle size (D ５０ This can be determined by measuring a suspension of component (C) suspended in water using a laser scattering particle size analyzer (e.g., Microtrac) and the resulting suspension.

[0062] Component (C) may be surface-treated with a surface treatment agent from the viewpoint of compatibility between its surface and the solvent, other components, etc., and adhesive strength. Examples of surface treatment agents include silane coupling agents. Examples of functional groups of silane coupling agents include vinyl groups, (meth)acryloyl groups, epoxy groups, mercapto groups, amino groups, diamino groups, alkoxy groups, ethoxy groups, phenyl groups, phenylamino groups, etc.

[0063] The content of component (C) is 50 to 85% by mass, based on the total amount of the film-like adhesive. If the content of component (C) is 50% by mass or more, based on the total amount of the film-like adhesive, the thermal conductivity of the film-like adhesive can be improved, and the heat dissipation of the semiconductor device can be further improved. If the content of component (C) is 85% by mass or less, based on the total amount of the film-like adhesive, other components can be included in greater quantity in the film-like adhesive. The content of component (C) may be 55% by mass or more, 60% by mass or more, 65% by mass or more, or 70% by mass or more, and may also be 82% by mass or less, 80% by mass or less, or 78% by mass or less, based on the total amount of the film-like adhesive. The content of component (C) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0064] Component (A), component (B), and component (C) may be the main components of the film-like adhesive of this embodiment. The total content of component (A), component (B), and component (C) may be, for example, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 96% by mass or more, 97% by mass or more, 98% by mass or more, 99% by mass or more, 99.5% by mass or more, 99.7% by mass or more, or 99.9% by mass or more, based on the total amount of the film-like adhesive. The total content of component (A), component (B), and component (C) may be, for example, 100% by mass or less, 99.9% by mass or less, 99.7% by mass or less, or 99.5% by mass or less, based on the total amount of the film-like adhesive.

[0065] (D) Component: Coupling agent Component (D) may be a silane coupling agent. Examples of silane coupling agents include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.

[0066] (E) component: curing accelerator. Examples of (E) component include imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. Among these, from the viewpoint of reactivity, (E) component may be imidazoles and their derivatives.

[0067] Examples of imidazoles and their derivatives include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole.

[0068] The film-like adhesive may further contain other components. Examples of other components include pigments, ion capture agents, antioxidants, and so on.

[0069] The total content of component (D), component (E), and other components may be 0% by mass or more, 0.01% by mass or more, 0.03% by mass or more, or 0.05% by mass or more, based on the total amount of the film-like adhesive, and may be 10% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.5% by mass or less, or 0.3% by mass or less. The total content of component (D), component (E), and other components in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0070] The thickness of the film-like adhesive 10A may be 50 μm or less. The thickness of the film-like adhesive 10A may be 45 μm or less, 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, 18 μm or less, 16 μm or less, 14 μm or less, or 12 μm or less. The thickness of the film-like adhesive 10A may be, for example, 1 μm or more. The thickness of the film-like adhesive 10A can be determined, for example, by measuring the thickness at five locations on the cross-section of the film-like adhesive 10A using a scanning electron microscope and calculating the average of the measured values.

[0071] The film-like adhesive 10A shown in Figure 1 is formed by molding an adhesive composition containing component (A), component (B), and component (C), as well as additional components as needed, into a film. Such a film-like adhesive 10A can be formed by applying the adhesive composition to a support film. In forming the film-like adhesive 10A, a varnish (adhesive varnish) containing the adhesive composition and a solvent may also be used. When using an adhesive varnish, the adhesive varnish can be prepared by mixing or kneading component (A), component (B), and component (C), as well as additional components as needed, in a solvent, applying the obtained adhesive varnish to a support film, and removing the solvent by heating and drying to obtain the film-like adhesive 10A.

[0072] Mixing or kneading can be carried out using conventional agitators, dispersers, three-roll mills, ball mills, and other dispersers, in appropriate combinations.

[0073] The solvent used in the preparation of the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, as well as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. From the viewpoint of drying speed and cost, the solvent may be methyl ethyl ketone or cyclohexanone. The concentration of solid components in the adhesive varnish may be 10 to 80% by mass based on the total amount of the adhesive varnish.

[0074] Known methods can be used to apply the adhesive varnish to the support film, such as the knife coating method, roll coating method, spray coating method, gravure coating method, bar coating method, and curtain coating method. The heating and drying conditions are not particularly limited as long as the solvent used is sufficiently evaporated, but may be 50 to 150°C for 1 to 30 minutes.

[0075] The thermal conductivity (at 35°C) of the film-like adhesive 10A after heat curing at 110°C for 1 hour and at 170°C for 3 hours (C-stage state) may be 0.8 W / (m·K) or higher, and may be 0.9 W / (m·K) or higher, 1.0 W / (m·K) or higher, or 1.1 W / (m·K) or higher. When the thermal conductivity is 0.8 W / (m·K) or higher, the heat dissipation performance of the semiconductor device tends to be better. There is no particular upper limit to the thermal conductivity (at 35°C) of the film-like adhesive 10A after heat curing at 110°C for 1 hour and at 170°C for 3 hours (C-stage state), but it may be 10 W / (m·K) or lower or 5.0 W / (m·K) or lower.

[0076] In this specification, the thermal conductivity (at 35°C) of the film-like adhesive 10A after heat curing at 110°C for 1 hour and 170°C for 3 hours (C-stage state) can be measured, for example, by the following method. First, the film-like adhesive is cut to a predetermined size, and multiple film pieces are prepared so that when laminated, the thickness is 300 to 500 μm. These film pieces are laminated on a 60°C hot plate using a rubber roll to produce a laminate with a thickness of 300 to 500 μm. Next, each laminate is heat-cured in a clean oven at 110°C for 1 hour and 170°C for 3 hours to obtain a sample in the C-stage state. The obtained sample is cut into 1 cm × 1 cm pieces, and the thermal conductivity is measured using these as thermal conductivity measurement films under the following measurement items / conditions.

[0077] (Calculation of Thermal Conductivity) The thermal conductivity λ in the thickness direction of the film used for thermal conductivity measurement is calculated by the following formula. The thermal diffusivity α, specific heat Cp, and density ρ are measured by the following method. A higher thermal conductivity λ means that the semiconductor device has better heat dissipation. Thermal conductivity λ (W / (m·K)) = Thermal diffusivity α (mm ２ / s) x specific heat Cp (J / (g・K)) x density ρ (g / cm ３ )

[0078] (Measurement of thermal diffusivity α) A measurement sample is prepared by blackening both sides of a thermal conductivity measurement film with graphite spray. Then, the thermal diffusivity α of this measurement sample is measured using the laser flash method (xenon flash method) with the following measurement device and conditions, for example: • Measurement device: Thermal diffusivity measuring device (e.g., LFA467 HyperFlash, manufactured by Netch Japan Co., Ltd.) • Pulse width of pulsed light irradiation: 0.08 ms • Irradiation voltage of pulsed light irradiation: 180 V • Processing of measurement sample: Blackening both sides of the thermal conductivity measurement film with graphite spray • Measurement ambient temperature: 35°C

[0079] (Measurement of Specific Heat Cp (35°C)) The specific heat Cp (35°C) of the thermal conductivity measurement film is determined, for example, by performing differential scanning calorimetry (DSC) using the following measuring device under the following conditions: • Measuring device: Differential scanning calorimeter (e.g., Rigaku Corporation, product name: DSC8231) • Reference material: Sapphire • Heating rate: 3°C / min • Heating temperature range: 25-75°C

[0080] (Measurement of density ρ) The density ρ of the thermal conductivity measurement film is measured by the Archimedes method using the following measuring device under the following conditions: • Measuring device: Electronic hydrometer (e.g., Alpha Mirage Co., Ltd., product name: EW-300SG) • Water temperature: 25°C

[0081] The film-like adhesive 10A may be used in the manufacturing process of a semiconductor device, and may also be used in the manufacturing process of a semiconductor device that is formed by stacking multiple semiconductor chips (a semiconductor device having a structure in which semiconductor chips are stacked).

[0082] The film-like adhesive 10A is also suitably used as an adhesive for bonding semiconductor chips together in a stacked MCP (for example, a three-dimensional NAND memory), which is a semiconductor device (a semiconductor device having a structure in which semiconductor chips are stacked) made by stacking multiple semiconductor chips.

[0083] The film-like adhesive 10A may be used to bond a semiconductor chip (for example, a first semiconductor chip) to a support member, or it may be used to bond a semiconductor chip (for example, a first semiconductor chip) to a semiconductor chip different from the first semiconductor chip (for example, a second semiconductor chip).

[0084] [Dicing and Die Bonding Integrated Film] Figure 2 is a schematic cross-sectional view showing one embodiment of a dicing and die bonding integrated film. The dicing and die bonding integrated film 100 shown in Figure 2 comprises a base layer 40, an adhesive layer 30, and an adhesive layer 10 consisting of a film-like adhesive 10A, in this order. The dicing and die bonding integrated film 100 can also be said to comprise a dicing film 50 comprising a base layer 40 and an adhesive layer 30 provided on the base layer 40, and an adhesive layer 10 provided on the adhesive layer 30 of the dicing film 50. The dicing and die bonding integrated film 100 may be in the form of a film, sheet, tape, etc. The dicing and die bonding integrated film 100 may have a support film 20 provided on the surface of the adhesive layer 10 opposite to the adhesive layer 30.

[0085] For example, the base material layer 40 in the dicing film 50 can be the same as that of the support film 20.

[0086] The adhesive layer 30 in the dicing film 50 is not particularly limited as long as it has sufficient adhesive strength to prevent semiconductor chips from scattering during dicing and low enough adhesive strength to avoid damaging the semiconductor chips during the subsequent semiconductor chip pickup process; conventionally known adhesives in the field of dicing films can be used. The adhesive layer 30 may be an adhesive layer containing a non-UV curing adhesive or an adhesive layer containing a UV curing adhesive. From the viewpoint of pickup properties, the adhesive layer 30 may be an adhesive layer containing a UV curing adhesive. When the adhesive layer contains a UV curing adhesive, the adhesiveness of the adhesive layer can be reduced by irradiation with ultraviolet light.

[0087] The thickness of the dicing film 50 (base layer 40 and adhesive layer 30) may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economy and ease of handling of the film.

[0088] The dicing / die-bonding integrated film 100 shown in FIG. 2 can be obtained by a manufacturing method including a step of preparing a dicing film 50 including a film-shaped adhesive 10A and a base material layer 40 and an adhesive layer 30 provided on the base material layer 40, and a step of bonding the film-shaped adhesive 10A and the adhesive layer 30 of the dicing film 50. As a method of bonding the film-shaped adhesive 10A and the adhesive layer 30 of the dicing film 50, a known method can be used.

[0089] When the adhesive layer contains an ultraviolet-curable adhesive, after the adhesive layer is irradiated with ultraviolet rays having an illuminance of 100 mW / cm ２ and an irradiation dose of 150 mJ / cm ２ the peel strength of the adhesive layer with respect to the adhesive layer after ultraviolet irradiation, measured under the conditions of a peel angle of 90° and a tensile speed of 300 mm / min at 25°C, may be 0.15 N / 25 mm or less. When the peel strength of the adhesive layer with respect to the adhesive layer after ultraviolet irradiation is 0.15 N / 25 mm or less, it becomes possible to achieve excellent pick-up properties. The peel strength of the adhesive layer with respect to the adhesive layer after ultraviolet irradiation may be 0.13 N / 25 mm or less, 0.11 N / 25 mm or less, or 0.10 N / 25 mm or less. The lower limit of the peel strength of the adhesive layer with respect to the adhesive layer after ultraviolet irradiation may be, for example, 0.05 N / 25 mm or more.

[0090] In this specification, the peel strength of the adhesive layer with respect to the adhesive layer after ultraviolet irradiation can be measured, for example, by the following method. First, a strongly adhesive tape (for example, manufactured by Oji Tack Co., Ltd., product name: Easy Cut Tape) is attached to the surface of the adhesive layer of the dicing / die-bonding integrated film to obtain a laminate. The obtained laminate is cut out into a size of 25 mm in width × 100 mm in length to prepare a sample for ultraviolet irradiation. Subsequently, ultraviolet rays (main wavelength: 365 nm) are irradiated onto the adhesive layer through the base material layer of the dicing / die-bonding integrated film at an illuminance of 100 mW / cm ２ and an irradiation dose of 150 mJ / cm <[ ２The sample for measurement is prepared by irradiating it under the specified conditions. Next, the sample for measurement is mounted on a small benchtop testing machine (Shimadzu Corporation, product name: EZ-SX) with the dicing film side of the dicing-die bonding integrated film fixed in place. The adhesive layer (film-like adhesive) is pulled at a peeling angle of 90° and a tensile speed of 300 mm / min to separate the adhesive layer from the tack layer of the sample for measurement (T-type peel test). After the start of the peel test, the measured values ​​from displacement 25 mm to 75 mm are averaged and this is taken as the peel strength of the adhesive layer from the tack layer after UV irradiation (N / 25 mm).

[0091] [Method for Manufacturing a Semiconductor Device] Figure 3 is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device. Figures 3(a), (b), (c), (d), (e), and (f) are schematic cross-sectional views showing each step. In one embodiment, the method for manufacturing a semiconductor device comprises the steps of: manufacturing a plurality of semiconductor chips 60 with adhesive pieces, each having a semiconductor chip Wa and an adhesive piece 10a formed by the individualization of the adhesive layer 10 attached to the semiconductor chip Wa, on the adhesive layer 30 of the dicing-die bonding integrated film 100 (semiconductor chip manufacturing step with adhesive pieces); and bonding a first semiconductor chip with adhesive pieces, which has a first semiconductor chip and a first adhesive piece, to a support member 80 via the first adhesive piece (adhesive piece 10a) (semiconductor chip bonding step, see Figure 3(f)).

[0092] There are mainly two possible embodiments of the semiconductor chip fabrication process with adhesive attached. The first embodiment, shown in Figure 3, will be described below, but this disclosure is not limited thereto.

[0093] The first embodiment is one in which a semiconductor wafer W is attached to the adhesive layer 10, and then the semiconductor wafer W and the adhesive layer 10 are diced together. That is, the first embodiment may include the steps of: attaching a semiconductor wafer W to the adhesive layer 10 of the dicing-die bonding integrated film 100 (wafer lamination step, see Figures 3(a) and (b)); producing a plurality of adhesive-piece semiconductor chips 60 by dicing the semiconductor wafer W to which the adhesive layer 10 has been attached (dicing step, see Figure 3(c)); and bonding a first semiconductor chip and a first adhesive-piece semiconductor chip having a first adhesive piece to a support member 80 via the first adhesive piece (adhesive piece 10a) (semiconductor chip bonding step, see Figure 3(f)).

[0094] A second embodiment is one in which pre-cut semiconductor chips are attached to an adhesive layer 10, and then only the adhesive layer 10 is diced. That is, the second embodiment may include the steps of: attaching semiconductor chips, which are made by cutting a semiconductor wafer into individual pieces, to the adhesive layer of a dicing-die bonding integrated film; producing a plurality of semiconductor chips with adhesive pieces by dicing the adhesive layer; and bonding a first semiconductor chip and a first semiconductor chip with adhesive pieces, which has the first adhesive piece, to a support member via the first adhesive piece.

[0095] The method for manufacturing a semiconductor device may further include, if necessary, a step of irradiating the adhesive layer 30 with ultraviolet light (through the substrate layer 40) between the dicing step and the semiconductor chip bonding step (ultraviolet irradiation step, see Figure 3(d)), a step of picking up the semiconductor chip Wa (semiconductor chip 60 with adhesive piece) to which the adhesive piece 10a has been attached from the adhesive layer 30a (pickup step, see Figure 3(e)), and a step of thermally curing the adhesive piece 10a on the semiconductor chip 60 with adhesive piece bonded to the support member 80 (thermal curing step).

[0096] The method for manufacturing a semiconductor device may further include a step of bonding a second semiconductor chip, which has a second semiconductor chip and a second adhesive piece, to the surface of the first semiconductor chip in the first semiconductor chip with adhesive piece bonded to the support member 80, via the second adhesive piece (adhesive piece 10a) from among a plurality of semiconductor chips with adhesive piece 60.

[0097] <First Embodiment> (Wafer Lamination Process) In this process, first, the dicing-die bonding integrated film 100 is placed in a predetermined apparatus. Next, the surface Ws of the semiconductor wafer W is attached to the adhesive layer 10 of the dicing-die bonding integrated film 100 under heating conditions (see Figures 3(a) and (b)). The circuit surface of the semiconductor wafer W may be provided on the side opposite to the surface Ws. The heating temperature may be, for example, 60 to 80°C.

[0098] Examples of semiconductor wafers W include single-crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.

[0099] The thickness of the semiconductor wafer W may be, for example, 50 to 3000 μm, 100 to 2000 μm, or 200 to 1500 μm.

[0100] (Dicing Process) In this process, the semiconductor wafer W and the adhesive layer 10 are diced to form individual pieces (see Figure 3(c)). Dicing can be performed, for example, from the circuit side of the semiconductor wafer according to a conventional method. In this process, for example, a method called full cutting, in which an incision is made up to the adhesive layer 10, a method in which a half-incision is made in the semiconductor wafer W and the wafer is divided by cooling and pulling, or a method of dividing by laser (stealth dicing) can be employed. The dicing apparatus used in this process is not particularly limited, and conventionally known apparatus can be used. At this time, a part of the adhesive layer 30, or all of the adhesive layer 30 and a part of the substrate layer 40 may be diced to form individual pieces. In this way, the dicing-die bonding integrated film 100 also functions as a dicing film.

[0101] (Ultraviolet Irradiation Step) If the adhesive layer 30 contains an ultraviolet-curable adhesive, the method for manufacturing the semiconductor device may include an ultraviolet irradiation step. In this step, ultraviolet light is irradiated onto the adhesive layer 30 (through the substrate layer 40) (see Figure 3(d)). In ultraviolet irradiation, the wavelength of the ultraviolet light may be 200 to 400 nm. The ultraviolet irradiation conditions are illuminance and irradiation dose of 30 to 240 mW / cm², respectively. ２ The range and 50-500 mJ / cm ２ It may be within that range.

[0102] (Pickup Process) In this process, the substrate layer 40 is expanded to separate the semiconductor chips 60 with adhesive pieces from each other, and the semiconductor chips 60 with adhesive pieces that have been pushed up from the substrate layer 40 side by the needle 72 are picked up from the adhesive layer 30a by the suction collet 74 (see Figure 3(e)). The semiconductor chip 60 with adhesive pieces has a semiconductor chip Wa and an adhesive piece 10a. The semiconductor chip Wa is a piece of semiconductor wafer W, and the adhesive piece 10a is a piece of adhesive layer 10. The adhesive layer 30a is the adhesive layer in the region corresponding to the pieced semiconductor chip 60 with adhesive pieces. The adhesive layer 30a may remain on the substrate layer 40 after the semiconductor chip 60 with adhesive pieces has been picked up. In this process, it is not always necessary to expand the substrate layer 40, but expanding the substrate layer 40 can further improve the pickup performance. The expansion of the substrate layer 40 may be a cooled expansion under cooling conditions (for example, -15 to 0°C).

[0103] The thickness of the semiconductor chip Wa may be the same as the thickness of the semiconductor wafer W, or it may be less than the thickness of the semiconductor wafer W. If the thickness of the semiconductor chip Wa is less than the thickness of the semiconductor wafer W, the thickness of the semiconductor chip Wa may be, for example, 10 to 200 μm. The thickness of the semiconductor chip Wa may be 15 μm or more, 20 μm or more, 150 μm or less, 100 μm or less, or 50 μm or less.

[0104] The semiconductor chip Wa may have, for example, a circuit layer. An example of a semiconductor chip with a circuit layer is an IC (integrated circuit).

[0105] The amount of upward thrust by the needle 72 can be set as appropriate. Furthermore, from the viewpoint of ensuring sufficient pickup even for ultrathin wafers, for example, two or three stages of upward thrust may be performed. In addition, the semiconductor chip 60 with adhesive residue may be picked up by a method other than the method using the suction collet 74.

[0106] (Semiconductor Chip Bonding Process) In this process, the picked-up semiconductor chip 60 with adhesive piece (a first semiconductor chip with adhesive piece having a first semiconductor chip and a first adhesive piece, among a plurality of semiconductor chips with adhesive piece) is bonded to the support member 80 via the adhesive piece 10a (first adhesive piece) by thermocompression bonding. Multiple semiconductor chips 60 with adhesive piece may be bonded to the support member 80.

[0107] Examples of the support member 80 include lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; modified plastic films obtained by impregnating and curing a base material such as glass nonwoven fabric with plastic such as polyimide resin and epoxy resin; and various ceramics such as alumina.

[0108] The heating temperature in the heat-sealing process may be, for example, 80 to 160°C. The pressure in the heat-sealing process may be, for example, 0.05 to 0.5 MPa. The heating time in the heat-sealing process may be, for example, 0.5 to 5 seconds.

[0109] (Thermosetting process) In this process, the adhesive piece 10a on the semiconductor chip 60 with adhesive piece attached to the support member 80 is thermoset. By thermosetting the adhesive piece 10a that is bonding the semiconductor chip Wa and the support member 80, it becomes a cured adhesive piece 10ac, which allows for stronger bonding and fixation (see Figure 3(f)). When thermosetting, pressure may be applied simultaneously to cure it. The heating temperature in this process can be appropriately changed depending on the components of the adhesive piece 10a. The heating temperature may be, for example, 60 to 200°C, 90 to 190°C, or 120 to 180°C. The heating time may be 30 minutes to 5 hours, 1 to 3 hours, or 2 to 3 hours. Note that the temperature or pressure may be changed in stages.

[0110] In particular, when the process includes thinning the semiconductor wafer by grinding it from the back side, handling the semiconductor wafer can become difficult. As in the first embodiment, when a thinned semiconductor wafer is diced, cracks and chips tend to occur easily. In contrast, the second embodiment, described later, is particularly advantageous for efficiently and with low damage manufacturing extremely thin semiconductor chips because it involves forming a modified layer or grooves on a relatively thick semiconductor wafer, and then thinning and dicing simultaneously by grinding the back side. Therefore, when the thickness of the semiconductor chip Wa is smaller than the thickness of the original semiconductor wafer W, it is preferable to adopt the second embodiment, especially when manufacturing extremely thin semiconductor chips of 10 to 200 μm.

[0111] <Second Embodiment> In the second embodiment, first, a semiconductor wafer is diced to produce a plurality of individual semiconductor chips. The method for dicing the semiconductor wafer may be a stealth dicing method such as the SDBG (Steel Dicing Before Grinding) method, or a half-cut dicing method such as the DBG (Dicing Before Grinding) method.

[0112] A stealth dicing method may include, for example, the steps of: attaching a protective tape (backgrind tape) to the circuit surface of a semiconductor wafer; forming a modified region inside the semiconductor wafer by irradiating it with laser light; and grinding the semiconductor wafer from the back side and dicing the semiconductor wafer using the modified region as the dividing point.

[0113] A half-cut dicing method may include, for example, the steps of forming grooves on the surface of a semiconductor wafer with a dicing blade, attaching protective tape (backgrind tape) to the circuit surface of the semiconductor wafer, and grinding the semiconductor wafer from the back side up to the grooves to dice the semiconductor wafer.

[0114] By using this method of separating semiconductor wafers into individual pieces, a laminate can be obtained that comprises a protective tape (backgrind tape) and a plurality of semiconductor chips provided on the protective tape.

[0115] Next, the multiple semiconductor chips of the resulting laminate are attached to the adhesive layer 10 of the dicing-die bonding integrated film 100 under heating conditions. The heating temperature may be, for example, 60 to 80°C.

[0116] Next, the protective tape (backgrind tape) is removed. This results in multiple semiconductor chips being arranged in a grid pattern on the adhesive layer of the dicing and die bonding integrated film.

[0117] Next, the adhesive layer 10 is diced to produce a plurality of semiconductor chips 60 with adhesive pieces, each having a semiconductor chip Wa and adhesive pieces 10a formed by separating the adhesive layer 10 attached to the semiconductor chip Wa. As a method for dicing the adhesive layer 10, for example, a method of expanding (stretching) the dicing film 50 of the dicing-die bonding integrated film 100 under cooling conditions (cooling expansion) can be used. Conventional known apparatus can be used for cooling expansion. The temperature of the cooling conditions may be, for example, -15 to 0°C.

[0118] After performing cooling and expanding, heat shrinking may be performed by heating the peripheral edge of the dicing film 50 with a heater. The heat shrinkage of the heated portion of the dicing film 50 can further expand the calf width between multiple semiconductor chips 60 with adhesive pieces. The heating temperature when heating with the heater may be, for example, 200 to 270°C.

[0119] Subsequent steps such as ultraviolet irradiation, pickup, semiconductor chip bonding, and thermosetting can be carried out in the same manner as in the first embodiment.

[0120] The method for manufacturing a semiconductor device may further include, if necessary, a step of bonding a second semiconductor chip, which has a second semiconductor chip and a second adhesive piece, to the surface of the first semiconductor chip in the first semiconductor chip with adhesive piece bonded to the support member 80, via a second adhesive piece (adhesive piece 10a) from among a plurality of semiconductor chips with adhesive piece bonded to the support member 80. The conditions for thermocompression bonding of the second semiconductor chip with adhesive piece may be the same as the conditions for thermocompression bonding of the first semiconductor chip with adhesive piece in the semiconductor chip bonding step. The second adhesive piece in the second semiconductor chip with adhesive piece bonded to the first semiconductor chip may be heat-cured. The heat-curing conditions for the second adhesive piece may be the same as the conditions for heat-curing the first adhesive piece (adhesive piece 10a) in the first semiconductor chip with adhesive piece bonded to the support member 80.

[0121] A method for manufacturing a semiconductor device may, if necessary, include a step (wire bonding step) of electrically connecting the tip of the terminal portion (inner lead) of a support member to the electrode pad on the semiconductor chip with a bonding wire. Examples of bonding wires include gold wire, aluminum wire, copper wire, etc. The temperature during wire bonding may be in the range of 80 to 250°C or 80 to 220°C. The heating time may be several seconds to several minutes. Wire bonding may be performed by a combination of ultrasonic vibration energy and applied pressure to bond the wire while it is heated within the above temperature range.

[0122] A method for manufacturing a semiconductor device may optionally include a step of sealing a semiconductor chip with a sealing material (sealing step). This step is performed to protect the semiconductor chip or bonding wire mounted on a support member. This step can be performed by molding a sealing resin (sealing resin) in a mold. The sealing resin may be, for example, an epoxy resin. The heat and pressure during sealing embed the support member and residue, preventing delamination due to air bubbles at the adhesive interface.

[0123] The semiconductor device manufacturing method may include, if necessary, a step (post-curing step) to completely cure the sealing resin that is not sufficiently cured in the sealing step. Even if the adhesive piece is not heat-cured in the sealing step, in this step, the adhesive piece can be heat-cured along with the curing of the sealing resin, enabling adhesive fixation. The heating temperature in this step can be appropriately set depending on the type of sealing resin, and may be in the range of 165 to 185°C, for example, and the heating time may be about 0.5 to 8 hours.

[0124] A method for manufacturing a semiconductor device may optionally include a step (heating and melting step) of heating a semiconductor chip with adhesive attached to a support member using a reflow oven. In this step, the resin-encapsulated semiconductor device may be surface-mounted on the support member. Examples of surface mounting methods include reflow soldering, in which solder is supplied onto a printed circuit board in advance, then heated and melted with hot air or the like to perform soldering. Examples of heating methods include hot air reflow and infrared reflow. The heating method may involve heating the entire device or heating a localized area. The heating temperature may be, for example, in the range of 240 to 280°C.

[0125] In one embodiment, the method for manufacturing a semiconductor device includes a step of interposing the above-mentioned film-like adhesive between a first semiconductor chip and a support member, or between a first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, to bond the first semiconductor chip and the support member, or the first semiconductor chip and the second semiconductor chip.

[0126] [Semiconductor Device] A semiconductor device manufactured using a film-like adhesive and a dicing / die bonding integrated film will be described in detail below with reference to the drawings. Note that in recent years, various structures of semiconductor devices have been proposed, and the applications of the film-like adhesive and dicing / die bonding integrated film of this embodiment are not limited to the semiconductor device structure described below.

[0127] Figure 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in Figure 4 comprises a semiconductor chip Wa (first semiconductor chip), a support member 80 on which the semiconductor chip Wa is mounted, and an adhesive member 12. The adhesive member 12 is provided between the semiconductor chip Wa and the support member 80 and adheres the semiconductor chip Wa and the support member 80. The adhesive member 12 is a cured product of a film-like adhesive (cured product of adhesive pieces). The connection terminals (not shown) of the semiconductor chip Wa are electrically connected to external connection terminals (not shown) via bonding wires 70, and the semiconductor chip Wa and bonding wires 70 are sealed by a sealing material 92. Solder ball terminals may be formed on the surface of the support member 80 opposite to the surface in contact with the adhesive member 12 for electrical connection to an external substrate (motherboard) (not shown).

[0128] Figure 5 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the semiconductor device 210 shown in Figure 5, the first semiconductor chip Waa (first semiconductor chip) is bonded to a support member 80 on which solder ball terminals 94 are formed by adhesive member 12a (cured film adhesive (cured adhesive piece)), and the second semiconductor chip Wab (second semiconductor chip) is further bonded to the first semiconductor chip Waa by adhesive member 12b (cured film adhesive (cured adhesive piece)). The connection terminals (not shown) of the first semiconductor chip Waa and the second semiconductor chip Wab are electrically connected to external connection terminals via bonding wires 70, and the semiconductor chips Waa, Wab and bonding wires 70 are sealed by a sealing material 92. The semiconductor device 210 shown in Figure 5 can also be described as the semiconductor device 200 shown in Figure 4, further comprising another semiconductor chip (second semiconductor chip) stacked on the surface of the semiconductor chip Wa (first semiconductor chip).

[0129] Figure 6 is a schematic cross-sectional view showing another embodiment of the semiconductor device. The semiconductor device 220 shown in Figure 6 comprises a support member 80 and semiconductor chips Waa (first semiconductor chip), Wab (second semiconductor chip), Wac (third semiconductor chip), Wad (fourth semiconductor chip), Wae (fifth semiconductor chip), Waf (sixth semiconductor chip), Wag (seventh semiconductor chip), and Wah (eighth semiconductor chip) stacked on the support member 80. The four semiconductor chips Waa, Wab, Wac, and Wad are stacked at positions offset from each other in the lateral direction (a direction perpendicular to the stacking direction) for connection to connection terminals (not shown) formed on the surface of the support member 80. The four semiconductor chips Wae, Waf, Wag, and Wah, which are stacked on top of them, are stacked in a folded manner at positions offset from each other in the lateral direction (a direction perpendicular to the stacking direction) on the opposite side of the four semiconductor chips Waa, Wab, Wac, and Wad for connection to connection terminals (not shown) formed on the surface of the support member 80 (see Figure 6). The semiconductor chip Waa is bonded to the support member 80 by adhesive member 12a (cured film-like adhesive (cured adhesive piece)), and adjacent semiconductor chips are also bonded to each other by adhesive members 12b, 12c, 12d, 12e, 12f, 12g, and 12h (cured film-like adhesive (cured adhesive piece)). The connection terminals (not shown) of the semiconductor chips Waa, Wab, Wac, Wad, Wae, Waf, Wag, and Wah are electrically connected to external connection terminals via bonding wires 70, and the semiconductor chips Waa, Wab, Wac, Wad, Wae, Waf, Wag, and Wah are sealed by a sealing material 92. The semiconductor device 220 shown in Figure 6 can also be described as the semiconductor device 200 shown in Figure 4, further comprising other semiconductor chips (second to eighth semiconductor chips) stacked on the surface of semiconductor chip Wa (first semiconductor chip). The semiconductor device 220 shown in Figure 6 can also be described as having a folded structure in the stacked structure of the semiconductor chips.

[0130] Although a semiconductor device has been described in detail above with respect to embodiments of the present disclosure, the present disclosure is not limited to the above embodiments. For example, Figure 6 illustrates a semiconductor device in which eight semiconductor chips are stacked, but the number of stacked semiconductor chips is not limited thereto. Also, Figure 6 illustrates a semiconductor device in which the semiconductor chips are stacked at positions offset from each other in the lateral direction (a direction perpendicular to the stacking direction), but a semiconductor device in which the semiconductor chips are stacked at positions not offset from each other in the lateral direction may also be used.

[0131] Since the semiconductor devices 200, 210, and 220 are equipped with a cured product of the above-mentioned film-like adhesive as the adhesive member 12, they have excellent heat dissipation properties.

[0132] The present disclosure will be described below in detail based on examples, but the present disclosure is not limited to these examples.

[0133] (Examples 1-5 and Comparative Example 1) [Preparation of Film-like Adhesives] <Preparation of Adhesive Varnish> Cyclohexanone was added to a mixture consisting of component (A) (components (A1) and (A2)) and component (C) in the components and composition ratios (unit: parts by mass) shown in Table 1, and stirred. Then, component (B) was added in the components and composition ratios (unit: parts by mass) shown in Table 1 and stirred, and then components (D) and (E) were added and stirred until each component was homogeneous to prepare the adhesive varnishes of Examples 1-5 and Comparative Example 1. Note that each component shown in Table 1 means the following, and the values ​​shown in Table 1 mean parts by mass of solids.

[0134] (A) Component: Thermosetting resin component (A1) Component: Epoxy resin (A1a) Component: Liquid epoxy resin (A1a-1) EXA-830CRP (product name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 159 g / eq) (A1b) Component: Solid epoxy resin (A1b-1) N-500P-10 (product name, manufactured by DIC Corporation, cresol novolac type epoxy resin, epoxy equivalent: 204 g / eq, softening point: 84°C) (A2) Component: Phenolic resin (A2-1) MEH-7800M (product name, manufactured by Meiwa Kasei Co., Ltd. (now UBE Corporation), phenyl aralkyl type phenolic resin, hydroxyl group equivalent: 174 g / eq, softening point: 82°C) (B) Component: Elastomer (B-1) SG-P3 solvent modified product (product name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight-average molecular weight: 800,000, Tg: 12℃) (C) Component: Inorganic filler (C-1) AA-07N (product name, manufactured by Sumitomo Chemical Co., Ltd., alumina filler, average particle size: 0.7-1.0 μm, Mohs hardness: 9) (C-2) AA-03NF (product name, manufactured by Sumitomo Chemical Co., Ltd., alumina filler, average particle size: 0.2-0.4 μm, Mohs hardness: 9) (C-3) AA-3N (product name, manufactured by Sumitomo Chemical Co., Ltd., alumina filler, average particle size: 3.0-4.0 μm, Mohs hardness: 9) (D) Component: Coupling agent (D-1) A-189 (product name, manufactured by Momentive Performance Materials Japan LLC, γ-mercaptopropyltrimethoxysilane) (D-2) Z-6119 (Trade name, manufactured by Dow Toray Industries, Ltd., γ-ureidopropyltriethoxysilane) (E) Ingredient: Curing accelerator (E-1) 2PZ-CN (Trade name, manufactured by Shikoku Chemicals, Ltd., 1-cyanoethyl-2-phenylimidazole)

[0135] <Preparation of Film-like Adhesives> A polyethylene terephthalate (PET) film with a thickness of 38 μm and a release treatment was prepared as a support film, and adhesive varnish was applied to the PET film. The applied adhesive varnish was heated and dried at 90°C for 3 minutes and 110°C for 3 minutes to obtain a laminate comprising the support film and the film-like adhesives (adhesive layers) of Examples 1 to 5 and Comparative Example 1, which were in the B-stage state, on the support film. The thickness of the film-like adhesive was adjusted by the amount of adhesive varnish applied to achieve the thickness shown in Table 1.

[0136] [Evaluation of Film-like Adhesives] The obtained film-like adhesives were evaluated for thermal conductivity, elongation at break, peel strength, and processability according to the following procedure. The evaluation results are shown in Table 1.

[0137] <Measurement of Thermal Conductivity> (Preparation of Film for Thermal Conductivity Measurement) The thermal conductivity (at 35°C) of the film-like adhesives of Examples 1 to 5 and Comparative Example 1 after heat curing at 110°C for 1 hour and 170°C for 3 hours (C-stage state) was measured by the following method. First, the film-like adhesive was cut to a predetermined size, and multiple film pieces were prepared so that the thickness when laminated would be 300 to 500 μm. These film pieces were laminated on a 60°C hot plate using a rubber roll to produce laminates with a thickness of 300 to 500 μm. Next, each laminate was heat-cured in a clean oven (manufactured by ESPEC Corporation) at 110°C for 1 hour and 170°C for 3 hours to obtain samples in the C-stage state. The obtained samples were cut into 1 cm x 1 cm pieces, and these were used as films for thermal conductivity measurement. The thermal conductivity was measured under the following measurement items / conditions.

[0138] (Calculation of Thermal Conductivity) The thermal conductivity λ in the thickness direction of the film used for thermal conductivity measurement was calculated using the following formula. The thermal diffusivity α, specific heat Cp, and density ρ were measured using the following method. A higher thermal conductivity λ indicates superior heat dissipation in semiconductor devices. Thermal conductivity λ (W / (m·K)) = Thermal diffusivity α (mm ２ / s) x specific heat Cp (J / (g・K)) x density ρ (g / cm ３ )

[0139] (Measurement of Thermal Irradiance α) A measurement sample was prepared by blackening both sides of a thermal conductivity measurement film with graphite spray. Next, the thermal diffusivity α of this measurement sample was measured using the laser flash method (xenon flash method) with the following measurement device and conditions. • Measurement device: Thermal diffusivity measuring device (manufactured by Netch Japan Co., Ltd., product name: LFA467 HyperFlash) • Pulse width of pulsed light irradiation: 0.08 ms • Irradiation voltage of pulsed light irradiation: 180 V • Processing of measurement sample: Blackening both sides of the thermal conductivity measurement film with graphite spray • Measurement ambient temperature: 35°C

[0140] (Measurement of Specific Heat Cp (35°C)) The specific heat Cp (35°C) of the thermal conductivity measurement film was determined by differential scanning calorimetry (DSC) using the following measuring device under the following conditions: • Measuring device: Differential scanning calorimeter (manufactured by Rigaku Corporation, product name: DSC8231) • Reference material: Sapphire • Heating rate: 3°C / min • Heating temperature range: 25-75°C

[0141] (Measurement of Density ρ) The density ρ of the thermal conductivity measurement film was measured by the Archimedes method using the following measuring device under the following conditions: • Measuring device: Electronic hydrometer (Alpha Mirage Co., Ltd., product name: EW-300SG) • Water temperature: 25°C

[0142] <Measurement of Elongation at Break> The elongation at break of the film-like adhesives of Examples 1 to 5 and Comparative Example 1 at 25°C was measured by the following method. A film-like adhesive (thickness 5 μm, 10 μm, or 25 μm) in the B-stage state was punched out into the shape of a dumbbell-shaped No. 1 tensile test specimen using an SD-type lever-type sample cutter, and the support film was removed to prepare a sample for measurement. The sample was mounted on a high-speed tensile testing machine (RTF-1250-HS-PL, A&D Company, Limited) using a jig to ensure that the distance between the chucks was maintained, and measured under the following conditions. From the measurement results, the film length at the point where the film broke was read, and the elongation at break of the film-like adhesive was calculated using formula (1). Elongation at break (%) = [(Gauge length after test (mm) - Gauge length (mm)) / Gauge length (mm)] × 100 ... (1) (Conditions) Load cell: 50N Distance between chucks: 100mm Gauge length: 40mm Tensile speed: 100mm / min Measurement temperature: 25℃

[0143] <Measurement of Peel Strength> (Preparation of Integrated Dicing and Die Bonding Films) Dicing film (manufactured by Resonac Co., Ltd., product name: 6363-47) was prepared. The adhesive layer of the dicing film and the respective film-like adhesives of Examples 1 to 5 and Comparative Example 1 were bonded together using a rubber roll to produce the integrated dicing and die bonding films of Examples 1 to 5 and Comparative Example 1.

[0144] (Measurement of Peel Strength) The peel strength of the adhesive layer against the adhesive layer after UV irradiation was measured by the following method. First, a strong adhesive tape (manufactured by Oji Tack Co., Ltd., product name: Easy Cut Tape) was attached to the surface of the adhesive layer of the dicing-die bonding integrated film to obtain a laminate. The obtained laminate was cut to a size of 25 mm wide x 100 mm long to prepare a sample for UV irradiation. Subsequently, ultraviolet light (main wavelength: 365 nm) was applied to the adhesive layer through the substrate layer of the dicing-die bonding integrated film at an irradiance of 100 mW / cm². ２ and irradiation dose of 150 mJ / cm² ２Samples for measurement were prepared by irradiating under the specified conditions. The sample for measurement was mounted on a small benchtop testing machine (Shimadzu Corporation, product name: EZ-SX) with the dicing film side of the dicing-die bonding integrated film fixed in place. The adhesive layer (film-like adhesive) was pulled at a peeling angle of 90° and a tensile speed of 300 mm / min to separate the adhesive layer from the tack layer of the sample for measurement (T-type peel test). After starting the peel test, the measured values ​​from displacement 25 mm to 75 mm were averaged and this was taken as the peel strength of the adhesive layer relative to the tack layer after UV irradiation (N / 25 mm).

[0145] (Processability Study) Processability was studied using a laminate comprising a support film and the film-like adhesives (adhesive layers) of Examples 1 to 5 and Comparative Example 1, which are in the B-stage state, on the support film. First, a circular die-cut of φ312 mm was performed on the adhesive layer of the laminate. Next, the unnecessary portion of the adhesive layer was wound up at a constant conveying speed, and if no breakage or chipping was observed in the unnecessary portion, it was evaluated as having excellent processability as "A", and if breakage or chipping was observed, it was evaluated as "B".

[0146]

[0147] As shown in Table 1, the film-like adhesives of Examples 1 to 5, which had an elongation at break of 150% or more, exhibited superior processability compared to the film-like adhesive of Comparative Example 1, which had an elongation at break of less than 150%, although their thermal conductivity was similar. These results confirm that the film-like adhesive of the present disclosure can be used to manufacture semiconductor devices with excellent heat dissipation and also exhibits excellent processability.

[0148] 10...Adhesive layer, 10A...Film-like adhesive, 10a...Adhesive piece, 10ac...Cured adhesive piece, 12, 12a, 12b, 12c, 12d, 12e, 12f, 12g, 12h...Adhesive members, 20...Support film, 30, 30a...Adhesive layer, 40...Base layer, 50...Dicing film, 60...Semiconductor chip with adhesive piece, 70...Bonding wire, 72...Needle, 74...Suction collet, 80...Support member, 92...Sealing material, 94...Solder ball terminal, 100...Dicing / die bonding integrated film, 200, 210, 220...Semiconductor equipment, W...Semiconductor wafer, Wa, Waa, Wab, Wac, Wad, Wae, Waf, Wag, Wah...Semiconductor chip.

Claims

1. A film-like adhesive containing a thermosetting resin component, an elastomer, and an inorganic filler, wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 2000 W / (m·K) at 20°C, the inorganic filler content is 50 to 85% by mass based on the total amount of the film-like adhesive, and the elongation at break measured at a tensile speed of 100 mm / min at 25°C is 150% or more.

2. The film-like adhesive according to claim 1, wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 600 W / (m·K) at 20°C.

3. The film-like adhesive according to claim 1, wherein the inorganic filler is composed of at least one substance selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, and silicon carbide.

4. The film-like adhesive according to any one of claims 1 to 3, wherein the thermosetting resin component comprises an epoxy resin and a phenolic resin.

5. The film-like adhesive according to claim 4, wherein the epoxy resin comprises a liquid epoxy resin that is liquid at 30°C and a solid epoxy resin that is solid at 30°C.

6. The film-like adhesive according to claim 5, wherein the content of the liquid epoxy resin is 2 to 10% by mass, based on the total amount of the film-like adhesive.

7. The film-like adhesive according to claim 5, wherein the content of the solid epoxy resin is 0.1 to 2% by mass, based on the total amount of the film-like adhesive.

8. The film-like adhesive according to claim 4, wherein the content of the phenolic resin is 3 to 12% by mass, based on the total amount of the film-like adhesive.

9. The film-like adhesive according to any one of claims 1 to 3, wherein the average particle size of the inorganic filler is 0.1 to 5 μm.

10. The film-like adhesive according to any one of claims 1 to 3, wherein the elastomer content is 1 to 20% by mass based on the total amount of the film-like adhesive.

11. A film-like adhesive according to any one of claims 1 to 3, wherein the thermal conductivity at 35°C after heat curing at 110°C for 1 hour and at 170°C for 3 hours is 0.8 W / (m·K) or more.

12. A film-like adhesive according to any one of claims 1 to 3, wherein the thickness is 50 μm or less.

13. A dicing-die bonding integrated film comprising, in this order, a base layer, an adhesive layer, and an adhesive layer made of a film-like adhesive according to any one of claims 1 to 3.

14. The dicing-die bonding integrated film according to claim 13, wherein the adhesive layer contains an ultraviolet-curing adhesive.

15. Illuminance of 100 mW / cm² applied to the adhesive layer. ２ and irradiation dose of 150 mJ / cm² ２ The dicing-die bonding integrated film according to claim 14, wherein, after irradiation with ultraviolet light, the peel strength of the adhesive layer to the adhesive layer after ultraviolet irradiation is 0.15 N / 25 mm or less, as measured under the conditions of a peel angle of 90° and a tensile speed of 300 mm / min at 25°C.

16. A semiconductor device comprising: a first semiconductor chip; a support member on which the first semiconductor chip is mounted; and a cured product of a film-like adhesive according to any one of claims 1 to 3, provided between the first semiconductor chip and the support member to bond the first semiconductor chip and the support member.

17. The semiconductor device according to claim 16, further comprising a second semiconductor chip, different from the first semiconductor chip, stacked on the surface of the first semiconductor chip.

18. A method for manufacturing a semiconductor device, comprising the steps of: producing a plurality of adhesive-piece semiconductor chips, each having a semiconductor chip and an adhesive piece formed by the individualization of the adhesive layer attached to the semiconductor chip, on the adhesive layer of the dicing-die bonding integrated film according to claim 13; and bonding a first semiconductor chip having a first adhesive piece and a first adhesive piece to a support member via the first adhesive piece.

19. A method for manufacturing a semiconductor device according to claim 18, further comprising the step of thermally curing the first adhesive piece in the semiconductor chip with the first adhesive piece at a temperature of 60 to 200°C for 30 minutes to 5 hours.

20. The method for manufacturing a semiconductor device according to claim 18, further comprising the step of bonding a second semiconductor chip having a second semiconductor chip and a second adhesive piece, from among the plurality of semiconductor chips with adhesive pieces, to the surface of the first semiconductor chip with adhesive piece bonded to the support member, via the second adhesive piece.

21. The method for manufacturing a semiconductor device according to claim 20, further comprising the step of thermally curing the first adhesive piece in the first adhesive piece-attached semiconductor chip and the second adhesive piece in the second adhesive piece-attached semiconductor chip at a temperature of 60 to 200°C for 30 minutes to 5 hours.

22. A method for manufacturing a semiconductor device, comprising the step of interposing a film-like adhesive according to any one of claims 1 to 3 between a first semiconductor chip and a support member, or between a first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, to bond the first semiconductor chip and the support member, or the first semiconductor chip and the second semiconductor chip.

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