Ion beam blocking apparatus and semiconductor process device

Abstract

The present application provides an ion beam blocking apparatus and a semiconductor process device. The ion beam blocking apparatus comprises an ion screening member and an ion collection member that are sequentially arranged along an ion movement direction and electrically insulated from each other; an enclosed space is formed between the ion screening member and the ion collection member, the ion screening member is provided with a plurality of screening holes for ions to pass through, and the screening holes are communicated with the enclosed space; and when a positive potential and a negative potential are applied to the ion screening member and the ion collection member respectively, an electric field formed in the enclosed space can guide ions to pass through the screening holes into the enclosed space and move toward the ion collection member.

Description

Ion beam blocking devices and semiconductor process equipment Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and more specifically, to an ion beam blocking device and semiconductor process equipment. Background Technology

[0002] Ion beam etching (IBE) is an etching technique that uses glow discharge to generate plasma, then uses a grid structure to extract and accelerate ions from the plasma, forming a directional ion beam. This ion beam is used to directly sputter the material to be etched using pure physical methods, thereby achieving etching or modification. Before the etching process can begin, the ion beam source needs time to stabilize. During this stabilization period, the ion beam needs to be blocked to prevent the directional ion beam from causing etching damage to the wafer or stage.

[0003] Existing baffle structures are flat structures made of etch-resistant materials (such as graphite or molybdenum) that directly block the output ions of the grid structure. However, when the ion beam sputters onto the baffle, the baffle material will inevitably be sputtered out. The sputtered particles will deposit on the surface of the grid structure, damaging the lifespan and performance of the grid structure, and thus reducing the performance and lifespan of the entire etching system. Summary of the Invention

[0004] This application aims to solve at least one of the technical problems existing in the prior art, and proposes an ion beam blocking device and semiconductor process equipment, which can solve the problem that particles generated by the baffle structure in the prior art damage the lifespan and performance of the gate structure.

[0005] To achieve the purpose of this application, an ion beam blocking device is provided, which is applied to semiconductor process equipment. It includes an ion filter and an ion collector arranged sequentially along the ion movement direction and electrically insulated from each other. An enclosed space is formed between the ion filter and the ion collector. The ion filter has a plurality of filtering holes for ions to pass through, and the filtering holes are in communication with the enclosed space.

[0006] When the ion filter and the ion collector are respectively given positive and negative potentials, the electric field formed in the enclosed space can guide ions through the filter holes into the enclosed space and move toward the ion collector.

[0007] In some embodiments, the potential applied to the ion filter is a first potential, and the positive potential applied to the first gate in the gate structure of the semiconductor process equipment is a second potential;

[0008] The first potential is less than the second potential.

[0009] In some embodiments, the first potential is greater than or equal to 0.3 times the second potential and less than or equal to 0.9 times the second potential.

[0010] In some embodiments, the absolute value of the potential applied to the ion filter is a first potential, and the absolute value of the negative potential applied to the ion collector is a third potential; the third potential is greater than or equal to 0.3 times the first potential and less than or equal to 1 times the first potential.

[0011] In some embodiments, the sum of the radial cross-sectional areas of all the screening holes accounts for a percentage of the total surface area of ​​the ion screening element that is greater than or equal to 60% and less than or equal to 90%.

[0012] In some embodiments, the surface of the ion collector exposed to the enclosed space is an arc-shaped concave surface, which is recessed in a direction away from the ion filter.

[0013] In some embodiments, a first insulating member is further included, the first insulating member being annular and disposed between the ion screening member and the ion collecting member;

[0014] The surfaces of the ion filter and the ion collector facing each other, along with the inner circumferential surface of the first insulating member, together form the enclosed space.

[0015] In some embodiments, the arcuate concave surface is coplanar with the inner circumferential surface of the first insulating member.

[0016] In some embodiments, a grounding element is further included, which is ring-shaped and disposed on the side of the ion filter away from the ion collector, and is electrically insulated from the ion filter.

[0017] In some embodiments, the inner peripheral portion of the grounding member protrudes toward the axis of the grounding member relative to the edge of the surface of the ion filter exposed in the enclosed space.

[0018] In some embodiments, the sieve holes are distributed in a circular region centered on the center of the surface of the ion filter exposed to the enclosed space;

[0019] The inner circumferential diameter of the inner circumferential portion of the grounding element is equal to the diameter of the circular region.

[0020] In some embodiments, the inner circumferential diameter of the grounding element is larger than the diameter of the gate structure of the semiconductor process equipment.

[0021] In some embodiments, a second insulating element is further included, which is annular and disposed between the grounding element and the ion screening element.

[0022] In some embodiments, a connector is further included, which is fixedly connected to the ion filter and the ion collector and is electrically insulated;

[0023] The connector is provided with an inlet channel for introducing cables that apply the positive and negative potentials to the ion filter and the ion collector, respectively.

[0024] In some embodiments, a protective housing is further included, the protective housing being disposed on the ion output side of the gate structure of the semiconductor process equipment, and the side of the protective housing facing the gate structure is open;

[0025] The ion screening element and the ion collecting element are disposed inside the protective housing; the connecting element is disposed through the protective housing.

[0026] As another technical solution, this application also provides a semiconductor process apparatus, including:

[0027] A process chamber with an opening;

[0028] A stage is disposed in the process chamber and has a support surface opposite to the opening for supporting the wafer;

[0029] An ion source is disposed outside the process chamber and includes a plasma generating device and a grid structure for extracting ions from the plasma, wherein the ion output side of the grid structure is opposite to the opening.

[0030] The ion beam blocking device provided in this application is movably disposed in the process chamber and can be located at a blocking position between the opening and the bearing surface, or moved away from the blocking position.

[0031] This application has the following beneficial effects:

[0032] The ion beam blocking device provided in this application is used to guide ions through the screening holes of the ion screen into the closed space between the ion screen and the ion collector when the ion beam is unstable, with positive and negative potentials applied to the ion screen and the ion collector, respectively. The electric field generated in this closed space guides ions to move towards the ion collector and are ultimately absorbed by it. The electric field lines are directed from the ion screen to the ion collector and accelerate the ions. This allows most of the ions entering the closed space to be directly absorbed by the negatively charged ion collector. A small portion of particles or ions that have undergone secondary sputtering are difficult to backflow to the gate structure surface through the screening holes due to the obstruction of the electric field in the closed space. This effectively reduces the number of particles or ions deposited on the gate structure surface, thereby improving the gate structure's lifespan and effectively solving the efficiency and cost problems associated with replacing the gate structure. This ultimately improves the lifespan and process performance of semiconductor equipment.

[0033] The semiconductor process equipment provided in this application, by employing the ion beam blocking device described above, can effectively reduce the number of particles or ions deposited on the surface of the gate structure, thereby improving the lifespan of the gate structure, effectively solving the efficiency and cost problems caused by replacing the gate structure, and improving the lifespan and process performance of the semiconductor process equipment. Attached Figure Description

[0034] Figure 1 is a structural diagram of the semiconductor process equipment provided in an embodiment of this application in one state;

[0035] Figure 2 is a schematic diagram of the grid structure in an embodiment of this application;

[0036] Figure 3 is a structural diagram of the semiconductor process equipment provided in an embodiment of this application in another state;

[0037] Figure 4 is a half-sectional perspective view of the ion beam blocking device provided in an embodiment of this application;

[0038] Figure 5 is a diagram showing the electric field vector distribution of the ion beam blocking device and grid structure provided in the embodiments of this application during operation;

[0039] Figure 6 is a perspective view of the ion beam blocking device provided in an embodiment of this application;

[0040] Figure 7 is a perspective view of the connector used in the embodiment of this application;

[0041] Figure 8 is a perspective view of the protective casing used in the embodiment of this application. Detailed Implementation

[0042] To enable those skilled in the art to better understand the technical solutions of this application, the ion beam blocking device and semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings.

[0043] Please refer to Figure 1. This application embodiment provides an ion beam blocking device 100 applied to a semiconductor process equipment 200. The semiconductor process equipment 200 is, for example, an ion beam etching (IBE) device. Specifically, the device includes a process chamber 201 with an opening, a stage 202, and an ion source 300. The stage 202 is disposed in the process chamber 201 and has a bearing surface opposite to the opening of the process chamber 201 for supporting a wafer 203. The ion source 300 is disposed outside the process chamber 201 and includes a plasma generating device and a grid structure 301 for extracting ions from the plasma. The grid structure 301 is vertically arranged, and the side of the grid structure 301 that outputs ions is opposite to the opening. The ion beam output by the grid structure 301 is, for example, parallel to a horizontal plane. The plasma generation device may specifically include a plasma generation cavity 302, an air intake device 303, a radio frequency coil 304, a radio frequency source, and a shielded outer cavity 305. The plasma generation cavity 302 is located outside the opening of the process chamber 201 and is fixedly connected to the side wall of the process chamber 201. The air intake device 303 is used to supply process gas into the plasma generation cavity 302. The radio frequency coil 304 is arranged around the plasma generation cavity 302. The radio frequency source includes a radio frequency power supply 306 and a matching device 307. The radio frequency power supply 306 is electrically connected to the radio frequency coil 304 through the matching device 307 and is used to excite the process gas in the plasma generation cavity 302 to form plasma. The shielded outer cavity 305 is covered around the plasma generation cavity 302 and the radio frequency coil 304 and is used to shield the radio frequency. The grid structure 301 is disposed between the plasma generation chamber 302 and the process chamber 201. It is used to extract ions from the plasma in the plasma generation chamber 302 and accelerate them to form an ion beam with a directional motion velocity (as shown by the dashed arrow in Figure 1), and output it into the process chamber 201 through the opening.

[0044] As shown in Figure 2, the grid structure 301 that achieves the above functions includes, for example, three grid layers. Each of the three grid layers is made of an etching-resistant metal material (such as graphite or molybdenum). These are, respectively, a first grid 301a, a second grid 301b, and a third grid 301c, arranged sequentially along the direction close to the process chamber 201 (i.e., the X direction in Figure 2). All three are vertically arranged to avoid grid deformation due to gravity, which could damage the grid's function. During the process, the first grid 301a is applied a positive potential to absorb electrons from the plasma, i.e., to filter electrons. The second grid 301b is applied a negative potential, and the electric field formed between the second grid 301b and the first grid 301a can extract ions from the plasma. The third grid 301c is grounded and, in conjunction with the first and second grids 301b, controls the divergence angle of the extracted ion beam to ensure that most ions can move along their axial direction. The ion beam output from the three-layer grid moves into the process chamber 201 along the axial direction of the three-layer grid.

[0045] The ion beam blocking device 100 provided in this embodiment is movably disposed in the process chamber 201 and can be located at a blocking position between the opening and the support surface (i.e., the position of the ion beam blocking device 100 in FIG. 1), or moved away from the blocking position, for example, moved to the position of the ion beam blocking device 100 in FIG. 3. Specifically, when the ion beam has not reached a stable state or the wafer 203 and the stage 202 have not reached the designated position, the ion beam blocking device 100 needs to be moved to the blocking position to block the ion beam, so as to prevent the ion beam from etching damage to the wafer 203 and the stage 202. After the ion beam reaches a stable state, the ion beam blocking device 100 is moved away from the blocking position so that the ion beam can enter the process chamber 201 for etching.

[0046] Referring to Figure 4, the ion beam blocking device 100 that achieves the above function includes an ion filter 101 and an ion collector 102 arranged sequentially along the ion movement direction and electrically insulated from each other; the ion movement direction is the movement direction of the ion beam output from the grid structure 301, for example, parallel to the axial direction of the three-layer grid (i.e., the X direction in Figure 4). A closed space 103 is formed between the ion filter 101 and the ion collector 102. The ion filter 101 has a plurality of filter holes 101a for ions to pass through, and the filter holes 101a are connected to the closed space 103; when the ion filter 101 and the ion collector 102 are respectively applied with positive and negative potentials, the electric field formed in the closed space 103 can guide ions to pass through the filter holes 101a into the closed space 103 and move towards the ion collector 102.

[0047] Please refer to Figure 5. When the ion beam is not stable, with the ion filter 101 and the ion collector 102 being applied positive and negative potentials respectively, the electric field formed in the enclosed space 103 guides the ions through the filter holes 101a of the ion filter 101 into the enclosed space 103 and move toward the ion collector 102, where they are eventually absorbed. The electric field lines of the aforementioned electric field (as shown by the thin black arrow between the ion filter 101 and the ion collector 102 in Figure 5) point from the ion filter 101 to the ion collector 102, and can accelerate the ions. This allows most of the ions entering the enclosed space 103 to be directly absorbed by the negatively charged ion collector 102. A small portion of particles or ions that have undergone secondary sputtering are difficult to backflow to the surface of the gate structure 301 through the filter holes 101a due to the obstruction of the electric field in the enclosed space 103. This effectively reduces the number of particles or ions deposited on the surface of the gate structure 301, thereby improving the lifespan of the gate structure 301. This effectively solves the efficiency and cost problems caused by replacing the gate structure 301, and improves the lifespan and process performance of the semiconductor process equipment 200.

[0048] In an embodiment where the gate structure 301 of the semiconductor process equipment 200 includes a first gate 301a, the potential applied to the ion filter 101 is a first potential, and the positive potential applied to the first gate 301a is a second potential; the first potential is less than the second potential. This allows the electric field lines of the electric field formed between the first gate 301a and the ion filter 101 to point from the first gate 301a to the ion filter 101. These electric field lines are shown by thick arrows of different gray levels in Figure 5, where the longer portion of the electric field lines in the thick arrows points from the first gate 301a to the ion filter 101. This prevents the ion beam from reversing and causing contamination or damage to the gate structure 301. In some embodiments, the first potential is greater than or equal to 0.3 times the second potential and less than or equal to 0.9 times the second potential, for example, 0.7 times. This ensures that the second potential is large enough and improves the ion collection efficiency of the ion beam blocking device 100, so as to effectively prevent the ion beam from moving backward into the grid structure 301.

[0049] In some embodiments, the absolute value of the potential applied to the ion filter 101 is a first potential, and the absolute value of the negative potential applied to the ion collector 102 is a third potential; the third potential is greater than or equal to 0.3 times the first potential and less than or equal to 1 times the first potential. The third potential should not be too large, otherwise the excessive acceleration of the ion beam may damage the ion collector 102; conversely, the third potential should not be too small, otherwise the insufficient acceleration of the ion beam may affect the effect of guiding ions towards the ion collector 102. By making the third potential greater than or equal to 0.3 times the first potential and less than or equal to 1 times the first potential, the above situation can be effectively avoided. Preferably, the third potential is 0.5 times the first potential.

[0050] In one specific embodiment, the amplitude of the positive potential applied to the first grid 301a is greater than 0V and less than or equal to 1500V; the amplitude of the negative potential applied to the second grid 301b is greater than or equal to -1500V and less than 0V; the amplitude of the first potential is greater than 0V and less than or equal to 1000V; and the amplitude of the third potential is greater than or equal to -1000V and less than 0V. The third grid 301c is grounded, and its potential is 0V.

[0051] In some embodiments, the ion filter 101 is plate-shaped, and the ion filter 101 is disposed opposite to the grid structure 301 along the axial direction of the grid structure 301 (i.e., the X direction in FIG. 4), and is located on the ion output side of the grid structure 301. The surface of the ion filter 101 opposite to the grid structure 301 and the surface away from the grid structure 301 are both planes, which are perpendicular to the axial direction of the grid structure 301, i.e., perpendicular to the ion movement direction. A plurality of filtering holes 101a are distributed in the ion filter 101, and the two ends of each filtering hole 101a are respectively located on the surface of the ion filter 101 opposite to the grid structure 301 and the surface away from the grid structure 301, for ions to pass through and enter the enclosed space 103.

[0052] In some embodiments, the thickness of the ion filter 101 (i.e., the distance between the surface of the ion filter 101 opposite to the grid structure 301 and the surface away from the grid structure 301) is greater than or equal to 1 mm and less than or equal to 4 mm.

[0053] In some embodiments, as shown in FIG6, a plurality of screening holes 101a are arranged around the axis of the ion filter 101 multiple times. That is, the plurality of screening holes 101a are distributed on multiple circumferences with different radii centered on the axis of the ion filter 101, and the plurality of screening holes 101a distributed on each circumference are evenly distributed on that circumference. This helps to increase the number of ions that pass through the screening holes 101a into the enclosed space 103.

[0054] In some embodiments, the sum of the radial cross-sectional areas of all the screening holes 101a accounts for a percentage of the total surface area of ​​the ion filter 101 that is greater than or equal to 60% and less than or equal to 90%. This helps to increase the number of ions that pass through the screening holes 101a into the enclosed space 103. Specifically, the radial cross-sectional area of ​​the screening holes 101a is the same as the cross-sectional area of ​​the screening holes 101a. The total area of ​​the surface of the ion filter 101 facing the grid structure or the ion collector 102 is the total surface area of ​​the ion filter 101. The surface of the ion filter 101 facing the grid structure or the ion collector 102 includes the hole region where all the screening holes 101a are located, and the non-hole region other than the hole region, wherein the area of ​​the hole region is the sum of the radial cross-sectional areas of all the screening holes 101a.

[0055] In some embodiments, each screening aperture 101a is, for example, a through-hole, and its radial cross-sectional shape includes a circle. The diameter of the through-hole is greater than or equal to 2 mm and less than or equal to 4 mm. This helps to increase the number of ions that pass through the screening aperture 101a into the enclosed space 103.

[0056] In some embodiments, the surface of the ion collector 102 exposed to the enclosed space 103 is an arc-shaped concave surface 102a, which is recessed in a direction away from the ion filter 101. The concave surface 102a makes most of the electric field lines in the enclosed space 103 perpendicular to the tangent of the concave surface 102a, as shown in Figure 5 near the direction of the electric field lines close to the ion collector 102. This makes most of the electric field lines non-parallel to the axial direction of each screening hole 101a. Thus, when ions pass through the screening holes 101a into the enclosed space 103, most of the ions are directly absorbed by the ion collector 102. A small portion of particles or ions that are sputtered a second time through the concave surface 102a of the ion collector 102 are difficult to backflow to the surface of the grid structure 301 through the screening holes 101a due to the electric field lines that are not parallel to the axial direction of the screening holes 101a. Therefore, the use of the concave surface 102a can further reduce the number of particles or ions deposited on the surface of the grid structure 301, thereby more effectively reducing damage to the grid structure 301. Based on this, the aforementioned arc-shaped concave surface 102a can also increase the surface area of ​​the ion collector 102 exposed to the enclosed space 103, thereby absorbing more ions. The aforementioned arc-shaped concave surface 102a is, for example, part of a spherical concave surface; however, the embodiments of this application are not limited to this. In practical applications, the arc-shaped concave surface 102a can be of any shape, as long as it can achieve the above-mentioned function.

[0057] In one specific embodiment, the ion collector 102 is an arc-shaped plate, and the surface of the arc-shaped plate facing the ion filter 101 is the aforementioned arc-shaped concave surface 102a. Moreover, the opening end of the arc-shaped recess formed by the arc-shaped concave surface 102a faces the ion filter 101, and the opening area of ​​the arc-shaped recess decreases, for example, from the opening end in a direction away from the ion filter 101.

[0058] In some embodiments, the ion beam blocking device 100 further includes a first insulating member 104, which is annular and disposed between the ion filter 101 and the ion collector 102; the opposing surfaces of the ion filter 101 and the ion collector 102, together with the inner peripheral surface of the first insulating member 104, form a closed space 103. The first insulating member 104 is used to electrically insulate the ion filter 101 and the ion collector 102 and to maintain a certain distance between them along the axial direction of each filter hole 101a, such distance being, for example, greater than or equal to 2 mm and less than or equal to 4 mm.

[0059] In embodiments where the surface of the ion collector 102 exposed to the enclosed space 103 is an arc-shaped concave surface 102a, the arc-shaped concave surface 102a is coplanar with the inner circumferential surface of the first insulating member 104. This ensures that ions passing through each screening hole 101a can move smoothly to the arc-shaped concave surface 102a, reducing the probability of ions being blocked by the first insulating member 104 and flowing back. In some embodiments, the diameter of the inner circumferential surface of the first insulating member 104 is greater than or equal to 350 mm and less than or equal to 400 mm.

[0060] In some embodiments, the ion beam blocking device 100 further includes a grounding member 105, which is ring-shaped and disposed on the side of the ion filter 101 away from the ion collector 102, and is electrically insulated from the ion filter 101. That is, the grounding member 105 is disposed between the ion filter 101 and the grid structure 301. Since the grounding member 105 is grounded, when the ion filter 101 and the ion collector 102 are respectively applied with positive and negative potentials, the electric field lines between the grounding member 105 and the ion filter 101 point from the ion filter 101 to the grounding member 105. As shown in FIG5, the electric field lines between the grounding member 105 and the ion filter 101 point approximately from the ion filter 101 to the grounding member 105. Thus, the movement of the ion beam that the electric field can pass through has a deceleration (impedance) effect, which can reduce the damage caused by ions to the ion filter 101. It should be noted that when the effect of the grid structure 301 on ion extraction is sufficiently large, it can be ensured that ions passing between the grounding member 105 and the ion filter 101 are only slowed down by the electric field between the grounding member 105 and the ion filter 101, but will still move towards the ion filter 101, and will not flow in the opposite direction towards the grid structure 301. This effect can be achieved when the first potential is greater than or equal to 0.3 times the second potential and less than or equal to 0.9 times the second potential. Furthermore, to achieve the above effect, in some embodiments, the axial distance between the grounding member 105 and the first grid 301a is greater than or equal to 1 mm and less than or equal to 10 mm. In some embodiments, the axial length of the grounding member 105 is greater than or equal to 1 mm and less than or equal to 2 mm.

[0061] In some embodiments, the inner circumferential diameter of the grounding member 105 is larger than the diameter of the grid structure. This allows the space enclosed by the grounding member 105 to be large enough to collect as much of the ion beam output from the grid structure as possible within that space. In embodiments where the grid structure includes a first grid 301a, a second grid 301b, and a third grid 301c, the three grids may have the same diameter, for example, in which case the inner circumferential diameter of the grounding member 105 is larger than the diameter of each grid.

[0062] In some embodiments, as shown in FIG4, the inner peripheral portion 105a of the grounding member 105 protrudes towards the axis of the grounding member 105 relative to the surface edge of the ion filter member 101 exposed to the enclosed space 103. That is, the inner peripheral diameter of the inner peripheral portion 105a of the grounding member 105 is smaller than the diameter of the surface edge of the ion filter member 101 exposed to the enclosed space 103. Thus, the inner peripheral portion 105a of the grounding member 105 can act as a barrier, preventing some ions that collide with the edge (non-hole portion) of the ion filter member 101 from being back-sputtered out of the grounding member 105, thereby further reducing the number of particles or ions deposited on the surface of the grid structure 301, and thus more effectively reducing damage to the grid structure 301. Further, in some embodiments, the difference between the diameter of the surface of the ion filter member 101 exposed to the enclosed space 103 and the inner peripheral diameter of the inner peripheral portion 105a of the grounding member 105 is greater than or equal to 30 mm and less than or equal to 80 mm. This can more effectively achieve the aforementioned barrier function.

[0063] In some embodiments, the screening holes 101a are distributed in a circular region centered on the center of the surface of the ion filter 101 exposed to the enclosed space 103. The diameter of this circular region is, for example, smaller than the diameter of the surface of the ion filter 101 exposed to the enclosed space 103. The inner circumferential diameter of the inner circumferential portion 105a of the grounding member 105 is equal to the diameter of the circular region. This allows the inner circumferential portion 105a of the grounding member 105 to be located outside the circular region containing the screening holes 101a, thereby helping to increase the number of ions that pass through the screening holes 101a into the enclosed space 103.

[0064] In some embodiments, the ion beam blocking device 100 further includes a second insulating member 106, which is annular and disposed between the grounding member 105 and the ion screening member 101. The second insulating member 106 is used to electrically insulate the grounding member 105 and the ion screening member 101 and to maintain a certain distance between them along the axial direction of each screening hole 101a, such distance being, for example, greater than or equal to 2 mm and less than or equal to 4 mm.

[0065] The inner circumferential diameter of the second insulating member 106 is, for example, greater than or equal to the inner circumferential diameter of the inner circumferential portion 105a of the grounding member 105. Specifically, the inner circumferential diameter of the second insulating member 106 can be equal to the diameter of the aforementioned circular region. This helps to increase the number of ions passing through the screening hole 101a into the enclosed space 103. Furthermore, in embodiments where the ion beam blocking device 100 also includes a first insulating member 104, the inner circumferential diameter of the second insulating member 106 can be the same as that of the first insulating member 104.

[0066] In some embodiments, for ease of processing, the thicknesses of the ion screening element 101, the first insulating element 104, the second insulating element 106, and the ion collecting element 102 may be the same.

[0067] In some embodiments, referring to Figures 6 and 7 together, the ion beam blocking device 100 further includes a connector 107, which is fixedly connected to the ion filter 101 and the ion collector 102 and electrically insulated, thereby enabling their fixation. Specifically, an insulating layer 107b can be provided between the connector 107 and the ion filter 101 and the ion collector 102 to achieve electrical insulation. Further, in embodiments where the ion beam blocking device 100 includes a grounding member 105, a second insulating member 106, an ion filter 101, a first insulating member 104, and an ion collector 102 sequentially connected along the ion movement direction, the connector 107 fixes these components together and electrically insulates them through the insulating layer 107b. The specific connection method is as follows: the connector 107 includes a fixing plate 107a, on which at least one first fixing hole 107a1 is provided corresponding to each of these components; correspondingly, as shown in FIG4, at least one second fixing hole 109 is provided on each of these components, and each second fixing hole 109 is provided in a one-to-one correspondence with each first fixing hole 107a1. The ion beam blocking device 100 also includes a plurality of fixing screws (not shown in the figure), each fixing screw passing through each first fixing hole 107a1 and the corresponding second fixing hole 109 to fix each of these components to the fixing plate 107a, thereby realizing the fixed connection between these components. Specifically, the first fixing hole 107a1 is, for example, an optical hole; the second fixing hole 109 is, for example, a threaded hole.

[0068] Furthermore, in some embodiments, a positioning groove 110 is formed together on the outer peripheral surfaces of these components. The shape and size of the positioning groove 110 are adapted to the shape and size of the fixing plate 107a. The fixing plate 107a is at least partially located in the positioning groove 110 to define the position of the fixing plate 107a. The positioning groove 110 and the fixing plate 107a are, for example, rectangular in shape.

[0069] In some embodiments, the connector 107, in addition to including the fixing plate 107a, also includes a connecting body. This connecting body is fixedly connected to the components via the fixing plate 107a. The connector 107 (including the connecting body and the fixing plate 107a) is provided with an introduction channel for introducing cables applying positive and negative potentials to the ion filter 101 and the ion collector 102, respectively, to apply positive and negative potentials to the ion filter 101 and the ion collector 102, respectively. The cables are used for electrical connection to at least one DC power source. In a specific embodiment, as shown in FIG7, the connecting body includes an L-shaped plate 107c and a columnar connecting shaft 107d. One end of the L-shaped plate 107c is integrally connected to or fixedly connected to the fixing plate 107a. The columnar connecting shaft 107d is integrally connected to or fixedly connected to the position of the L-shaped plate 107c away from the fixing plate 107a. Both the L-shaped plate 107c and the columnar connecting shaft 107d are hollow. A connecting hole 107a2 is provided in the fixing plate 107a, which is connected to the hollow space 107c1 of the L-shaped plate 107c and the hollow space 107d1 of the columnar connecting shaft 107d, forming the aforementioned introduction channel. The cable (not shown in the figure) passes through the hollow space 107d1 of the cylindrical connecting shaft 107d, and then sequentially passes through the hollow space 107c1 of the L-shaped plate 107c and the connecting hole 107a2 in the fixing plate 107a, connecting electrically to the grounding member 105, the ion screening member 101, and the ion collecting member 102. It is easy to understand that there are multiple cables, used to ground the grounding member 105, apply a positive potential to the ion screening member 101, and apply a negative potential to the ion collecting member 102, respectively. Based on this, as shown in Figure 1, the cylindrical connecting shaft 107d is used to pass through the chamber wall of the process chamber 201, allowing cables outside the process chamber 201 to be introduced into the process chamber 201 through the cylindrical connecting shaft 107d. Specifically, the cylindrical connecting shaft 107d can be connected to the drive device 205 through the flange 204. The flange 204 is rotatably installed through the chamber wall of the process chamber 201. The drive device 205 is used to drive the columnar connecting shaft 107d to rotate around its axis through the flange 204, thereby driving the components including the connector 107, which is connected to the ion screening component 101 and the ion collecting component 102, to rotate to the blocking position or move away from the blocking position.

[0070] In some embodiments, as shown in Figures 1, 6, and 8, the ion beam blocking device 100 further includes a protective housing 108. The protective housing 108 is disposed on the ion output side of the grid structure 301, and the side of the protective housing 108 facing the grid structure 301 is open to ensure that ions output from the grid structure 301 can flow into the protective housing 108. Ion filters 101 and ion collectors 102 are disposed inside the protective housing 108; the protective housing 108 is used to prevent its internal components (including but not limited to ion filters 101 and ion collectors 102) from contacting the chamber wall of the process chamber 201 during the process of leaving the blocking position. The aforementioned connector 107 is disposed through the protective housing 108. Specifically, multiple third fixing holes 108a can be provided at the corresponding fixing plate 107a position of the protective housing 108. Each third fixing hole 108a is provided in a one-to-one correspondence with each first fixing hole 107a1. Each fixing screw passes through each third fixing hole 108a, the corresponding first fixing hole 107a1 and the corresponding second fixing hole 109 in a one-to-one correspondence, so as to fix each of these components, the fixing plate 107a and the protective housing 108.

[0071] In summary, the ion beam blocking device 100 provided in this application embodiment is used to guide ions through the screening holes 101a of the ion screening element 101 into the closed space 103 formed between the ion screening element 101 and the ion collecting element 102 when the ion beam is not stable, and when the ion screening element 101 and the ion collecting element 102 are respectively applied with positive and negative potentials. The ions then move towards the ion collecting element 102 and are finally absorbed by the ion collecting element 102. The electric field lines of the aforementioned electric field point from the ion filter 101 to the ion collector 102, and can accelerate the ions. This allows most of the ions entering the enclosed space 103 to be directly absorbed by the negatively charged ion collector 102. A small portion of particles or ions that have undergone secondary sputtering are difficult to flow back to the surface of the gate structure 301 through the filter holes 101a due to the obstruction of the electric field in the enclosed space 103. This effectively reduces the number of particles or ions deposited on the surface of the gate structure 301, thereby improving the lifespan of the gate structure 301. This effectively solves the efficiency and cost problems caused by replacing the gate structure 301, and improves the lifespan and process performance of the semiconductor process equipment 200.

[0072] As another technical solution, this application embodiment also provides a semiconductor process equipment 200, which is, for example, an ion beam etching (IBE) equipment. This equipment has been described in detail in the above embodiments and will not be repeated here.

[0073] The semiconductor process equipment 200 provided in this application embodiment can effectively reduce the number of particles or ions deposited on the surface of the gate structure 301 by adopting the ion beam blocking device 100 provided in this application embodiment, thereby improving the lifespan of the gate structure 301, effectively solving the efficiency and cost problems caused by replacing the gate structure 301, and improving the lifespan and process performance of the semiconductor process equipment 200.

[0074] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of this application, and this application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this application, and these modifications and improvements are also considered to be within the scope of protection of this application.

Claims

1. An ion beam blocking device, used in semiconductor process equipment, characterized in that, It includes an ion filter and an ion collector arranged sequentially along the direction of ion movement and electrically insulated from each other; a closed space is formed between the ion filter and the ion collector, and the ion filter has a plurality of filter holes for ions to pass through, and the filter holes are in communication with the closed space; When the ion filter and the ion collector are respectively given positive and negative potentials, the electric field formed in the enclosed space can guide ions through the filter holes into the enclosed space and move toward the ion collector.

2. The ion beam blocking device according to claim 1, characterized in that, The potential applied to the ion filter is the first potential, and the positive potential applied to the first gate in the gate structure of the semiconductor process equipment is the second potential; The first potential is less than the second potential.

3. The ion beam blocking device according to claim 2, characterized in that, The first potential is greater than or equal to 0.3 times the second potential and less than or equal to 0.9 times the second potential.

4. The ion beam blocking device according to claim 1, characterized in that, The absolute value of the potential applied to the ion filter is a first potential, and the absolute value of the negative potential applied to the ion collector is a third potential; the third potential is greater than or equal to 0.3 times the first potential and less than or equal to 1 times the first potential.

5. The ion beam blocking device according to any one of claims 1-4, characterized in that, The sum of the radial cross-sectional areas of all the screening holes accounts for a percentage of the total surface area of ​​the ion screening element that is greater than or equal to 60% and less than or equal to 90%.

6. The ion beam blocking device according to any one of claims 1-4, characterized in that, The surface of the ion collector exposed to the enclosed space is an arc-shaped concave surface, which is recessed in a direction away from the ion filter.

7. The ion beam blocking device according to claim 6, characterized in that, It also includes a first insulating element, which is annular and disposed between the ion screening element and the ion collecting element; The surfaces of the ion filter and the ion collector facing each other, along with the inner circumferential surface of the first insulating member, together form the enclosed space.

8. The ion beam blocking device according to claim 7, characterized in that, The arc-shaped concave surface is coplanar with the inner circumferential surface of the first insulating component.

9. The ion beam blocking device according to any one of claims 1-4, characterized in that, It also includes a grounding element, which is ring-shaped and disposed on the side of the ion filter element away from the ion collector element, and is electrically insulated from the ion filter element.

10. The ion beam blocking device according to claim 9, characterized in that, The inner circumferential portion of the grounding member protrudes toward the axis of the grounding member relative to the edge of the surface of the ion filter exposed in the enclosed space.

11. The ion beam blocking device according to claim 10, characterized in that, The sieve holes are distributed in a circular region centered on the center of the surface of the ion filter element exposed to the enclosed space. The inner circumferential diameter of the inner circumferential portion of the grounding element is equal to the diameter of the circular region.

12. The ion beam blocking device according to claim 9, characterized in that, The inner diameter of the grounding element is larger than the diameter of the gate structure of the semiconductor process equipment.

13. The ion beam blocking device according to claim 9, characterized in that, It also includes a second insulating element, which is ring-shaped and disposed between the grounding element and the ion screening element.

14. The ion beam blocking device according to any one of claims 1-4, characterized in that, It also includes a connector, which is fixedly connected to the ion screening element and the ion collecting element and is electrically insulated; The connector is provided with an inlet channel for introducing cables that apply the positive and negative potentials to the ion filter and the ion collector, respectively.

15. The ion beam blocking device according to claim 14, characterized in that, It also includes a protective housing, which is disposed on the ion output side of the gate structure of the semiconductor process equipment, and the side of the protective housing facing the gate structure is open; The ion screening element and the ion collecting element are disposed inside the protective housing; the connecting element is disposed through the protective housing.

16. A semiconductor process apparatus, characterized in that, include: A process chamber with an opening; A stage is disposed in the process chamber and has a support surface opposite to the opening for supporting the wafer; An ion source is disposed outside the process chamber and includes a plasma generating device and a grid structure for extracting ions from the plasma, wherein the ion output side of the grid structure is opposite to the opening. The ion beam blocking device as described in any one of claims 1-15 is movably disposed in the process chamber and is capable of being located at a blocking position between the opening and the bearing surface, or being moved away from the blocking position.

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