Bypass flow arrangements for plasma delivery systems, and related processing chambers, flow assemblies, and methods

Abstract

Embodiments of the present disclosure generally relate to semiconductor processing equipment. In one or more embodiments, a flow assembly includes a baffle assembly coupled to a plasma source, the baffle assembly comprising a plurality of baffles and a mixing chamber disposed downstream of the plurality of baffles, and a manifold coupled to the plasma source and the baffle assembly, the manifold comprising a plurality of outlet openings, the plurality of outlet openings of the manifold configured to bypass the plurality of baffles.

Description

BYPASS FLOW ARRANGEMENTS FOR PLASMA DELIVERY SYSTEMS, AND RELATED PROCESSING CHAMBERS, FLOW ASSEMBLIES, AND METHODSCROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims priority to and the benefit of U.S. Provisional Patent Application No. 63 / 716,659, filed November 5, 2024, which is incorporated by reference herein in its entirety.BACKGROUNDField

[0002] Embodiments of the present disclosure generally relate to semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to a processing chamber and flow assembly for semiconductor fabrication and cleaning methods using the same.Description of the Related Art

[0003] In the fabrication of electronic devices on semiconductor substrates, a substrate undergoes an oxide etch operation and a plasma etch operation. The fluids used during these operations are reactive and coatings that are resistant to one fluid will react with the other. This can result in a chamber and apparatus specific to each operation, otherwise the process gases will wear flow components and / or radicals flowing within the flow components will recombine or deplete. The addition of a chamber in a processing system adds additional time as the substrate must be moved from one chamber to the next. This movement adds time and therefore reduces throughput.

[0004] Therefore, there is a need in the art for a flow assembly that can perform an oxide etch operation and a plasma etch operation.SUMMARY

[0005] Embodiments of the present disclosure generally relate to semiconductor processing equipment.

[0006] In one or more embodiments, a flow assembly includes a baffle assembly and a manifold, of which the manifold and / or the baffle assembly iscoupled to the plasma source. The baffle assembly includes a plurality of baffles and a mixing chamber. The manifold is coupled to the plasma source and the baffle assembly. The manifold includes a plurality of outlet openings configured to bypass the plurality of baffles.

[0007] In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume, and a flow assembly coupled to the chamber body. The flow assembly includes a manifold coupled to a plasma source, and a baffle assembly. The manifold includes a plurality of outlet openings. The baffle assembly is coupled to the manifold. The manifold is disposed between the baffle assembly and the plasma source. The baffle assembly includes a plurality of baffles and a mixing chamber. The plurality of outlet openings of the manifold are configured to bypass the plurality of baffles.

[0008] In one or more embodiments, a method of substrate processing includes disposing a substrate in a processing volume of a processing chamber, flowing a first fluid from a flow assembly into the processing volume, through a baffle assembly, to at least partially remove an oxidized material from the substrate in the processing chamber, and flowing a second fluid into the processing volume from the flow assembly, through a manifold of the flow assembly that bypasses one or more baffles, to at least partially remove a carbon material from the substrate in the processing chamber.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0010] Figure 1 is a partial cross sectional view showing an illustrative processing chamber, according to one or more embodiments.

[0011] Figure 2A is a schematic side cross-sectional view of a flow assembly, according to one or more embodiments.

[0012] Figure 2B is a schematic side cross-sectional view of a flow assembly, according to one or more embodiments.

[0013] Figure 2C is a schematic side cross-sectional view of a flow assembly, according to one or more embodiments.

[0014] Figure 2D is a schematic side cross-sectional view of the flow assembly, according to one or more embodiments.

[0015] Figure 3 is a method of treating a substrate, according to one or more embodiments.

[0016] Figure 4 is a schematic top view of the flow assembly, according to one or more embodiments.

[0017] Figure 5 is a schematic side cross-sectional view of a flow assembly, according to one or more embodiments

[0018] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.DETAILED DESCRIPTION

[0019] Figure 1 is a partial cross sectional view showing a processing chamber 100, according to one or more embodiments. In one or more embodiments, the processing chamber 100 includes a chamber body 102, a substrate 103, a lid assembly 104, and a support assembly or pedestal 106. The lid assembly 104 is disposed at an upper end of the chamber body 102, and the pedestal 106 is at least partially disposed within the chamber body 102.The processing chamber 100 and the associated hardware are preferably formed from one or more process-compatible materials, such as aluminum. In one or more embodiments, the processing chamber 100 is an etch chamber, such as a pre-clean chamber that removes one or more layers and / or one or more contaminants from substrate(s).

[0020] The chamber body 102 includes an upper portion 128 and a slit valve opening 108. The slit valve opening 108 is formed in a sidewall of the chamber body 102 to provide access to the interior of the processing chamber 100. The slit valve opening 108 is selectively opened and closed to allow access to the interior of the chamber body 102 by a handling robot. In one embodiment, the substrate 103 can be transported in and out of the processing chamber 100 through the slit valve opening 108 to an adjacent transfer chamber and / or loadlock chamber, or another chamber within a cluster tool.

[0021] In one or more embodiments, the chamber body 102 includes a channel 110 formed therein for flowing a heat transfer fluid therethrough. The heat transfer fluid can be a heating fluid or a coolant and is used to control the temperature of the chamber body 102 during processing and substrate transfer. The temperature of the chamber body 102 is important to prevent unwanted condensation of the gas or byproducts on the chamber walls. Exemplary heat transfer fluids include water, ethylene glycol, or a mixture thereof. An exemplary heat transfer fluid may also include nitrogen gas.

[0022] The chamber body 102 also includes a liner 112 that surrounds the pedestal 106. The liner 112 is preferably removable for servicing and cleaning. The liner 112 can be made of a metal such as aluminum, or a ceramic material. However, the liner 112 can be any process compatible material. The liner 112 can be bead blasted to increase the adhesion of any material deposited thereon, thereby preventing flaking of material which results in contamination of the processing chamber 100. In one or more embodiments, the liner 112 includes one or more apertures 114 and a pumping channel 116 formed therein that is in fluid communication with a vacuum system. The apertures 114provide a flow path for gases into the pumping channel 116, which provides an egress for the gases within the processing chamber 100.

[0023] The vacuum system can include a vacuum pump 118 and a throttle valve 120 to regulate flow of gases through the processing chamber 100. The vacuum pump 118 is coupled to a vacuum port 122 disposed on the chamber body 102 and therefore, in fluid communication with the pumping channel 116 formed in the liner 112. An aperture 124 aligns with the slit valve opening 108 disposed on a side wall of the chamber body 102 is formed within the liner 112 to allow entry and egress of substrates to / from the chamber body 102. The terms “gas” and “gases” are used interchangeably, unless otherwise noted, and can refer to one or more precursors, reactants, catalysts, carrier gases, purge gases, cleaning gases, or combinations thereof, as well as any other fluid introduced into the chamber body 102.

[0024] The apertures 114 allow the pumping channel 116 to be in fluid communication with a processing volume 126 within the chamber body 102. The processing volume 126 is defined by a lower surface of the lid assembly 104 and an upper surface of the pedestal 106 and is surrounded by the liner 112. The apertures 114 may be uniformly sized and evenly spaced about the liner 112. However, any number, position, size or shape of apertures may be used, and each of those design parameters can vary depending on the desired flow pattern of gas across the substrate receiving surface as is discussed in more detail below. In addition, the size, number and position of the apertures 114 are configured to achieve uniform flow of gases exiting the processing chamber 100. Further, the aperture size and location may be configured to provide rapid or high capacity pumping to facilitate a rapid exhaust of gas from the processing chamber 100. For example, the number and size of apertures 114 in close proximity to the vacuum port 122 may be smaller than the size of apertures 114 positioned farther away from the vacuum port 122.

[0025] In operation, one or more gases exiting the processing chamber 100 flow through the apertures 114 formed through the liner 112 into the pumping channel 116. The gas then flows within the pumping channel 116 and throughports into a vacuum channel and exits the vacuum channel through the vacuum port 122 into the vacuum pump 118.

[0026] Considering the flow assembly 200 in more detail, the flow assembly 200 includes a number of components stacked on top of one another. The flow assembly 200 is described in more detail in the description of Figures 2A, 2B, 2C, and 2D.

[0027] The pedestal 106 includes a cooling base 138. The cooling base 138 is coupled to a support member 140 and a flange 142 of a stem 144. The cooling base 138 includes a plurality of cooling channels 146 formed therein for flowing a coolant. The support member 140 includes a plurality of heating elements 148. The heating elements 148 function as a multi-zone heater.

[0028] Figure 2A is a schematic side cross-sectional view of a flow assembly 200a, according to one or more embodiments.

[0029] The flow assembly 200a includes a plasma source 210, a manifold 215, a flow adapter 220, a mixing manifold 235 and a plate stack 245. At least part of the flow assembly 200a can be used in place of at least part of the lid assembly 104 in Figure 1. The flow assembly 200a can be coupled to the processing chamber 100 in Figure 1. The plasma source 210 is coupled with a manifold 215. The mixing manifold 235 may be coupled with a top of processing chamber 100 and may be coupled with an inlet disposed on a side of the processing chamber 100. In one or more embodiments, the flow assembly 200a is a quartz free flow assembly. In one or more embodiments, the plasma source 210 may be disposed externally from the flow assembly and is coupled to the components as shown in Figures 2A-2D through one or more conduits, such as the plurality of conduits 207a.

[0030] The plasma source 210 may be a plasma generation device forming part of the processing chamber or disposed externally of the processing chamber and is sufficient for generating a plasma that may be provided to the processing chamber as described herein. Examples of plasma sources include an inductive coupled plasma (ICP) source, a capacitively coupled plasma(CCP) source, a remote plasma source (RPS), and combinations thereof. Examples of a remote plasma source may include a toroidal plasma source, a microwave-based source, and a RF (Radio Frequency) source, and combinations thereof.

[0031] For the following description, the one or more gases provides from the plasma source 210 will be referred to as plasm gas or plasma gases, and the one or more gases provided through the one or more flow openings 222 will be referred to as process gases.

[0032] The manifold 215 may be coupled with the plasma source 210 at a first end 211 , and may be coupled with the flow adapter 220 at a second end 212 opposite the first end 211. The manifold 215 may include one or more flow openings 213, 214. A central flow opening 213 extending through the first end 211 may be used. The central flow opening 213 can extend partially into the manifold 215 to define a recess. The central flow opening 213 may transition to smaller flow openings 214 extending from the central flow opening 213 defined within the manifold 215. As an example, one such smaller flow opening 214 is illustrated in Figure 2A although it is contemplated that any number of smaller flow openings 214 may be used. The manifold 215 includes a plurality of outlets openings 216 fluidly coupled to the plasma source 210 by the one or more flow openings 213, 214. The plurality of outlets openings 216 include a first outlet opening 216a and a second outlet opening 216b. Each outlet opening of the plurality of outlets openings 216 is equally and symmetrically distributed through a sidewall of the manifold 215.

[0033] The manifold 215 may also define one or more trenches defined beneath manifold 215. The trenches may be or include one or more annular recesses defined within manifold 215 to allow seating of an O-ring and / or elastomeric element, which may facilitate coupling with the flow adapter 220. The various components of the flow assembly 200a can be formed of a metal (such as aluminum or stainless steel), a ceramic, graphite, silicon carbide (SiC), quartz (such as transparent quartz or opaque quartz), and / or other materials. The manifold 215 can be formed of a thermally conductive material to providea thermal break, manifold 215 may be formed of a less thermally conductive material.

[0034] The manifold 215 is coupled to the plate stack by a plurality of conduits 207a. While shown as two conduits, the plurality of conduits 207a may include three or more conduits, for example four conduits. The plurality of conduits 207a are distributed symmetrically around the manifold 215. Each conduit of the plurality of conduits 207a is sized such that the conductance of the fluid translating through the plurality of conduits 207a is similar to the conductance of a fluid translating through the baffle assembly 229. The plurality of conduits 207a include a first conduit 208a and a second conduit 208b. The plurality of conduits 207a are fluidly coupled to the plurality of outlets openings 216 such that each conduit of the plurality of conduits 207a is coupled to a respective outlet opening of the plurality of outlets openings 216. In one or more embodiments, each conduit of the plurality of conduits 207a is equally and symmetrically distributed around the flow assembly 200a. The plurality of conduits 207 include an inner surface 209a and an outer surface 209b. In one or more embodiments, the inner surface 209a includes a diameter of 3 millimeters or greater and a coating that is resistant to plasma. For example, the inner surface 209a includes a coating resistant to radicals (such as hydrogen (H+) radicals) in plasma state. The present disclosure contemplates that radicals other than hydrogen may be used, such as oxygen radicals or nitrogen radicals, for example. In one or more embodiments, the oxide coating includes silicon oxide (SiC ). In one or more embodiments, the coating is a dual layer coating of silicon oxide and aluminum oxide (AI2O3) where the aluminum oxide is disposed between the inner surface 209a and the silicon oxide. The silicon oxide reduces recombination of hydrogen (H+) radicals.

[0035] In one or more embodiments, the conduits 207 are formed of stainless steel and / or aluminum. Other materials are contemplated for the conduits 207.

[0036] The flow adapter 220 may be coupled with the second end 212 of the manifold 215. The flow adapter 220 can include a first end face 217 and asecond end face 218 opposite the first end. The flow adapter 220 may define one or more central cavities through portions of flow adapter 220.

[0037] The transition may occur at a midpoint through the flow adapter 220, which may be at any position along a length of the flow adapter 220. The flow adapter 220 includes an outlet cavity 221 , which may extend into the second end face 218 of the flow adapter 220.

[0038] The flow adapter 220 may include one or more flow openings 222 (such as one or more ports) formed in an outer surface of the flow adapter 220, such as formed in a sidewall or side portion of the flow adapter 220. The one or more flow openings 222 can respectively flow a process gas. The process gases flowed through the one or more flow openings 222 can flow to the outlet cavity 221. In an embodiment where different process gases are supplied through different flow openings 222, the process gases are mixed in the outlet cavity 221.

[0039] The flow adapter 220 may be made of a similar or different material from manifold 215. In one or more embodiments, the flow adapter 220 is formed of a metal (such as aluminum or stainless steel, an oxide thereof, or a treated surface thereof), a ceramic, graphite, silicon carbide (SiC), quartz (such as transparent quartz or opaque quartz), and / or other materials. Interior surfaces of flow adapter 220 may be coated with one or more materials to protect flow adapter 220 from damage that may be caused by the process gases flowing therein. For example, the coating may include anodizing, yttrium oxide, and / or barium titanate.

[0040] The second end face 218 of the flow adapter 220 may optionally include a recess extending into the flow adapter 220, and within which a first baffle 231 may be seated. The first baffle 231 may optionally be included in some system configurations and may provide improved mixing of a first process gas, such as a precursor, and second processing gas, such as a second precursor, flowing through flow adapter 220. The first baffle 231 may include one or more apertures or channels through which the process gases may flow,which may increase uniformity of mixing of the process gases. In one or more embodiments, the first baffle 231 is a plurality of baffles 231 .

[0041] A baffle assembly 229 includes a spacer 230 that can be coupled to the flow adapter 220. The spacer 230 may be or include ceramic and may be formed of a similar material as manifold 215 and / or flow adapter 220. Spacer 230 may include a central opening 232 therethrough. The central opening 232 (e.g., an aperture) can include a taper. A portion of central opening 232 adjacent the outlet cavity 221 may have a diameter equal to or similar to a diameter of the outlet cavity 221 . The baffle assembly 229 includes a mixing manifold 235 that may be coupled to the spacer 230 at a first end 236 or first surface, and may be coupled with the processing chamber 100 (such as a plate of the lid assembly of the processing chamber 100) at a second end 237 opposite first end 236. The mixing manifold 235 includes a flow opening 239 (such as a central channel), which may extend from first end 236 to second end 237 and may be configured to deliver process gases, such as precursors, into the processing chamber 100. The mixing manifold 235 can also flow one or more secondary process gases that can be different in composition than the one or more process gases initially supplied through the one or more flow openings 222. The mixing manifold 235 may provide a second mixing stage. For example, in the mixing manifold 235 the one or more secondary process gases can be mixed with the process gases initially supplied through the one or more flow openings 222 and the plasma gases supplied from the plasma source 210. The one or more secondary process gases flow through one or more side flow openings 239 (e.g., ports) formed in a sidewall of the manifold 235. The mixing manifold 235 may include one or more trenches formed in the first end 236. For example, the mixing manifold 235 may define a first trench 240, and a second trench 241 , which may provide fluid access from the one or more side flow openings 239 to a central opening 232. For example, the one or more side flow openings 239 may provide fluid connection to one or both trenches 240, 241 .

[0042] The baffle assembly 229 is coupled to the processing chamber 100. The plasma source 210 is part of a plasma source assembly 201. The flowadapter 220 is coupled between the plasma source assembly 201 and the baffle assembly 229. The plasma source assembly 201 is operable to supply a plasma gas to the processing volume 126. The flow adapter 220 is operable to supply one or more process gases through the baffle assembly 229 to the processing volume 126.

[0043] In one or more embodiments, the one or more secondary process gases supplied through a sidewall of the mixing manifold 235 may include an inert gas (such as argon or helium), one or more etching precursors (such as one or more hydrogen-containing precursors, one or more fluorine-containing precursors, and / or one or more halogen-containing precursors), one or more selectivity precursors, one or more dopant precursors, and / or one or more other precursor(s). In one or more embodiments, the one or more process gases supplied through a sidewall of the flow adapter 220 include an inert gas (such as argon), one or more etching precursors (such as one or more hydrogencontaining precursors, one or more fluorine-containing precursors, and / or one or more halogen-containing precursors), one or more selectivity precursors, one or more dopant precursors, and / or one or more other precursor(s), and the plasma gas supplied from the plasma source 210 include plasma effluents (such as radicals, for example hydrogen radicals or other radicals). In one or more embodiments, the one or more secondary process gases supplied through a sidewall of the mixing manifold 235 has a different composition than the one or more process gases supplied through a sidewall of the flow adapter 220 and a different composition than the plasma (e.g., radicals) supplied to the conduits 207a from the manifold 215.

[0044] By mixing the various gases (such as precursors, for example etchants) prior to delivery to the processing chamber 100, the flow assembly 200a may provide an etchant having uniform properties prior to being distributed about a chamber and substrate. Additionally, by providing multiple stages of mixing, more uniformity of mixing may be provided for the process gases, which can facilitate uniform and adjustable processing. As an example, processes performed with the present application may have more uniform results across a substrate surface. The illustrated stack of components of theflow assembly 200a may limit particle accumulation by reducing the number of elastomeric seals included in the stack, which may degrade over time and produce particles that may affect processes being performed.

[0045] Similar to the first baffle 231 described previously, the flow assembly 200a may optionally include a plurality of baffles, for example, a second baffle 249, which when included, may be included with or instead of first baffle 231 . For example, the second baffle 249 may be seated in a recess formed in the mixing manifold 235. The second baffle 249 may include one or more openings (such as apertures or channels) through which the process gases may flow, which may increase uniformity of mixing of the process gases. In one or more embodiments, the second baffle 249 is a plurality of baffles. The baffle assembly 229 includes a mixing chamber 246. A fluid flows from the one or more flow openings 222 through the flow adapter 220 and through the plurality of baffles of the baffle assembly 229, and enters into the mixing chamber 246. The mixing chamber 246 is fluidly coupled to the processing chamber 100.

[0046] In the implementation shown in Figure 2A, the processing chamber 100 is coupled to a plate stack 245. In one or more embodiments, the plate stack 245 includes a gasbox 250, a blocker plate 260, a faceplate 270, an ion filter 280, and a lid spacer 290. The components may be utilized to distribute a process gas or gases, such as a precursor or set of precursors, through the chamber to provide a uniform delivery of process gases to a substrate for processing. The gasbox 250, the blocker plate 260, the faceplate 270, the ion filter 280, and the lid spacer 290 may be part of a lid assembly of the processing chamber 100. A heater 248 may be configured to heat the processing chamber 100. The heater 248 may be a plate heater or resistive element heater. The ion filter 280 is disposed between the plasma source 210 and the processing volume 126

[0047] The gasbox 250 includes a gasbox chamber 251 disposed within the gasbox 250. The blocker plate 260 includes a blocker plate chamber 261 disposed within the blocker plate 260 and a plurality of openings 263 (such as apertures) therethrough. The plurality of openings 263 fluidly couple thegasbox chamber 251 to the blocker plate chamber 261. The faceplate 270 includes a plurality of openings 273 (such as apertures) therethrough. The plurality of openings 273 fluidly couple the blocker plate chamber 261 to the processing volume 126.

[0048] In the implementation shown in Figure 2A, the manifold 215 is fluidly coupled to the gasbox 250 by the plurality of conduits 207a such that plasma from the plasma source 210 translates through the manifold 215 and bypasses the baffle assembly 229. The plasma bypasses the baffle assembly 229 by translating into the gasbox chamber 251 through an inlet 253a. The inlet 253a is disposed downstream of the plurality of baffles of the baffle assembly 229. In one or more embodiments, the inlet 253a is one of a plurality of inlets 253a of the plate stack 245. The plurality of inlets 253a are coupled to the plurality of conduits 207a. In one or more embodiments, the baffle assembly 229 is disposed centrally within the flow assembly 200a, the plurality of conduits 207a are coupled to the plurality of outlet openings 216, and the plurality of conduits 207a are disposed radially outward of the baffle assembly 229.

[0049] The plasma bypassing the baffle assembly 229 reduces the turbulence the plasma experiences because the plasma does not need to pass through one or more baffles and any apertures the baffles may include. By reducing turbulence along a flow path, plasma radicals recombining with flow path walls is reduced. For example, when hydrogen radicals pass through the plurality of conduits 207a, turbulent flow rates reduce the number of hydrogen radicals that ultimately reach the processing volume 126.

[0050] Figure 2B is a schematic side cross-sectional view of the flow assembly 200b, according to one or more embodiments. The flow assembly 200b is similar to the flow assembly 200a of Figure 2A.

[0051] In the implementation shown in Figure 2B, the manifold 215 is fluidly coupled to the blocker plate 260 by the plurality of conduits 207b such that plasma from the plasma source 210 translates through the manifold 215 and enters the blocker plate chamber 261 while bypassing the baffle assembly 229,the gasbox 250, and the plurality of openings 263 of the blocker plate 260. The plasma bypasses the baffle assembly 229 by translating into the blocker plate chamber 261 through an inlet, for example a plurality of inlets 253b of the plate stack 245. The plurality of inlets 253b are coupled to the plurality of conduits 207b. In one or more embodiments, the baffle assembly 229 is disposed centrally within the flow assembly 200b, the plurality of conduits 207b are coupled to the plurality of outlet openings 216, and the plurality of conduits 207b are disposed radially outward of the baffle assembly 229.

[0052] The plasma bypassing the baffle assembly 229 and the gasbox 250 reduces the turbulence the plasma experiences because the plasma does not need to pass through the baffles and any apertures the baffles may include. In the implementation shown in Figure 2B, the plasma from the plasma source 210 has a flow path through the plurality of conduits 207b and the plurality of inlets 253b with reduced turbulence, while the plurality of openings 273 in the faceplate 270 assist in equal distribution of the plasma.

[0053] Figure 2C is a schematic side cross-sectional view of the flow assembly 200c, according to one or more embodiments. The flow assembly 200c is similar to the flow assembly 200a of Figure 2A and the flow assembly 200a of Figure 2B.

[0054] In the implementation shown in Figure 2C, the manifold 215 is fluidly coupled to the lid spacer 290 by the plurality of conduits 207c such that plasma from the plasma source 210 translates through the manifold 215 and enters the processing volume 126 while bypassing the baffle assembly 229, the gasbox 250, and the blocker plate 260. The plasma bypasses the baffle assembly 229 by translating into the processing volume 126 through the lid spacer 290 of the plate stack 245. The plurality of inlets 253c are coupled to the plurality of conduits 207c. In one or more embodiments, the baffle assembly 229 is disposed centrally within the flow assembly 200b, the plurality of conduits 207c are coupled to the plurality of outlet openings 216, and the plurality of conduits 207c are disposed radially outward of the baffle assembly 229.

[0055] The plasma bypassing the baffle assembly 229, the gasbox 250, the blocker plate 260, and the faceplate 270 reduces the turbulence the plasma experiences because the plasma does not need to pass through distribution structures used by fluids that enter the processing volume 126 from the flow adapter 220, the mixing manifold 235 the baffle assembly 229, or any combination thereof. In the implementation shown in Figure 2C, the plasma from the plasma source 210 has a flow path through the plurality of conduits 207c and the plurality of inlets 253c with reduced turbulence, while the plurality of inlets 253c in the lid spacer 290 assist in equally distributing the plasma around the processing volume 126.

[0056] Figure 2D is a schematic side cross-sectional view of the flow assembly 200d, according to one or more embodiments. The flow assembly 200d is similar to the flow assembly 200a of Figure 2A, the flow assembly 200b of Figure 2B, and the flow assembly 200c of Figure 2C.

[0057] In the implementation shown in Figure 2D, the manifold 215 is fluidly coupled to the mixing chamber 246 by the plurality of conduits 207d such that plasma from the plasma source 210 translates through the manifold 215 and enters the mixing chamber 246 while bypassing the one or more of the first baffle 231 and the second baffle 249 such that plasma from the plasma source 210 bypasses a plurality of baffles. The plasma bypasses the plurality of baffles by translating into the mixing chamber 246 through the plurality of inlets 253d disposed through the mixing manifold 235, downstream of the plurality of baffles. The plurality of inlets 253d are coupled to the plurality of conduits 207d.

[0058] The plasma bypassing the bypasses a plurality of baffles reduces the distance the plasma must translate before entering the processing volume 126 plasma source 210. In the implementation shown in Figure 2D, the plasma from the plasma source 210 has a flow path through the plurality of conduits 207d and the plurality of inlets 253d with reduced distance, and the plurality of openings 263 in the blocker plate 260 and the plurality of openings 273 in the faceplate 270 assist in equally distributing the plasma around the processing volume 126.

[0059] Figure 3 is a method 300 of processing a substrate, according to one or more embodiments. The method 300 is described in reference to Figures 2A, 2B, 2C, and 2D. In one or more embodiments, the method 300 treats and / or pre-cleans a substrate.

[0060] At optional operation 301 , the substrate 103 is disposed in the processing volume 126 of a processing chamber 100.

[0061] At operation 303, a first fluid is flowed from the flow assembly 200 into the processing volume 126. The first fluid flows through the baffle assembly 229 to at least partially remove an oxidized material from the substrate 103 in the processing chamber 100. In one or more embodiments, the first fluid is a chemical etch fluid that will etch oxidized layer(s) (such as quartz material) so surfaces in contact with the first fluid include an electromagnetic plated (ENP) coating. For example, the one or more flow openings 222 formed in the flow adapter 220 may include a chemical etch resistant coating that is resistant to fluorine, hydrogen fluorine, and other chemical etch fluids. A chemical etch resistant coating includes a nickel-alloy coating, for example, a nickel-phosphorus alloy, for example, an electroless nickel plating (ENP), but other coatings are contemplated. Flowing the first fluid forms a treated substrate 103 surface. In one or more embodiments, the treated substrate surface has had an oxide removed.

[0062] At operation 305, a second fluid is flowed into the processing volume 126 from the flow assembly 200 through the manifold 215 of the flow assembly 200 that bypasses the baffle assembly 229 to at least partially remove a carbon material from the substrate 103 in the processing chamber 100. The second fluid flows through a plurality of conduits 207 to bypass one or more baffles 231 , 249 and symmetrically flows into the processing volume 126. In one or more embodiments, the second fluid translates from the plasma source 210 of the flow assembly 200, through the lid spacer 290 and into the processing volume 126. The lid spacer 290 contacts the chamber body 102 of the processing chamberlOO.

[0063] The plurality of conduits 207 form the flow path of the second fluid and include a plasma resistant coating different from the coating used on the flow path of the flow path of the first fluid. The coating used in the second flow path for the second fluid is a plasma resistant coating. In one or more embodiments, the oxide coating is a hydrogen plasma radical resistant coating. For example, the plasma resistant coating includes silicon oxide.

[0064] When the first fluid is a chemical etch fluid with fluorine, the first fluid would etch away a silicon oxide used in the flow path of the second fluid. Similarly, when the second fluid is a hydrogen plasma, a chemical etch resistant coating, for example, electroless nickel plating, will cause the hydrogen radicals in the plasma to recombine and reduce the effectiveness of the carbon removal at operation 305. Thus, the embodiments described herein enable a flow assembly to provide a chemical etch fluid into the processing volume 126 through a first flow path within the flow assembly and a plasma etch fluid into the processing volume 126 through a second flow path within the flow assembly different from the first flow path.

[0065] When the flow assembly can flow both a chemical etch fluid and plasma etch fluid into the processing volume, the chamber can be implemented into a system for increased throughput.

[0066] In one or more embodiments, the first fluid centrally translates through the baffle assembly 229 disposed on the plate stack 245 and the second fluid translates radially outward of the first fluid.

[0067] In one or more embodiments, flowing the first fluid in operation 303 forms a treated substrate 103 surface and the substrate 103 stays in the processing chamber 100 during a subsequent carbon removal operation 305 performed on the treated substrate 103 surface by the second fluid. In one or more embodiments, the second fluid includes hydrogen radicals (H+) in a plasma state.

[0068] In one or more embodiments, the second fluid translates from the manifold 215 to the first conduit 208a and to the second conduit 208b. Thesecond fluid symmetrically translates through the plate stack 245 before entering the processing volume 126. The second fluid translates in a laminar flow rate. For example, the second fluid is provided for a plasma at a mass flow rate, at a volumetric flow rate, at a pressure, at a Magnetic Reynolds number, or any combination thereof to Schieve the laminar flow rate.

[0069] In one or more embodiments, the method 300 includes optional operation 307. Operation 307 includes supplying a third fluid to one or more of the manifold 215, the flow adapter 220, the mixing manifold 235 or any combination thereof. The third fluid may be a purge gas to prevent plasma from flowing upstream of the plurality of inlets 253a, 253b, 253c, 253d. In one or more embodiments, the third flows into the flow assembly 200a through a sidewall of the mixing manifold 235 so that the first fluid and the third fluid mix downstream of the flow adapter 220.

[0070] Figure 4 is a schematic top view of the flow assembly 200a shown in Figure 2A, according to one or more embodiments. As illustrated in Figure 4, the plurality conduits 207a extend from the manifold 215 and are coupled to the gasbox 250.

[0071] The plurality of conduits 207a are spaced azimuthally from each other and disposed outward and around the manifold 215 and the mixing manifold 235. In one or more embodiments, the conduits 207a are distributed symmetrically and spaced azimuthally equidistantly from each other. The conduits 207a are sized such that the conductance of the fluid translating through the plurality of conduits 207a is similar to the conductance of a fluid translating through the baffle assembly 229. The plurality of conduits 207a include the first conduit 208a, the second conduit 208b, a third conduit 208c, and a fourth conduit 208d. A different number (such as two, three, five, six, or another number) of conduits 207a can be used.

[0072] Figure 5 is a schematic side cross-sectional view of a flow assembly 500, according to one or more embodiments.

[0073] The flow assembly 500 includes a plasma source 510, a manifold 515, a flow adapter 520, a mixing manifold 535 and a plate stack 245. At least part of the flow assembly 500 can be used in place of at least part of the lid assembly 104 in Figure 1. The flow assembly 500 can be coupled to the processing chamber 100 in Figure 1 . The plasma source 510 is coupled to the manifold 515. The mixing manifold 535 may be coupled with a top of the processing chamber 100 and may be coupled with an inlet disposed on a side of the processing chamber 100. In one or more embodiments, the flow assembly 500 is a quartz free flow assembly.

[0074] The various components of the flow assembly 500 can be formed of a metal (such as aluminum or stainless steel), a ceramic, graphite, silicon carbide (SiC), quartz (such as transparent quartz or opaque quartz), and / or other materials. The manifold 515 can be formed of a thermally conductive material to provide a thermal break, manifold 515 may be formed of a less thermally conductive material.

[0075] The manifold 515 is between the plasma source 510 and the flow adapter 520. The manifold 515 may include one or more flow openings. A central flow opening 513 extending through the first end 211 may be used. The central flow opening 513 can extend partially into the manifold 515 to define a recess. The central flow opening 513 transitions to conduits 507 within the manifold 515.

[0076] The manifold 515 is coupled to the plate stack 545 by a plurality of conduits 507. While shown as two conduits in the view of Figure 5, a first conduit 508a and a second conduit 508b, the plurality of conduits 507 may include three or more conduits, for example four conduits. The plurality of conduits 507 are distributed symmetrically within the manifold 515. Each conduit of the plurality of conduits 507 is sized such that the conductance of the fluid translating through the plurality of conduits 507 is similar to the conductance of a fluid translating through the baffle assembly 529. The plurality of conduits 507 include the first conduit 508a and the second conduit 508b. The plurality of conduits 507 are fluidly coupled to a mixing chamber 546.

[0077] In one or more embodiments, each conduit of the plurality of conduits 507 is equally and symmetrically distributed within the flow assembly 500.

[0078] The flow adapter 520 may define one or more central cavities through portions of the flow adapter 520. In one or more embodiments, the flow adapter 520 includes an outlet cavity 221 fluidly coupled to one or more flow openings 222 (such as one or more ports) formed in an outer surface of the flow adapter 520, such as formed in a sidewall or side portion of the flow adapter 520. The one or more flow openings 222 can respectively flow a process gas. The process gases flowed through the one or more flow openings 222 can flow to the outlet cavity 221. In one or more embodiments, the flow adapter 520 includes a first baffle 521 disposed in the outlet cavity 221 and downstream of the downstream of one or more flow openings 222. In one or more embodiments, different process gases are supplied through different flow openings 222 of the flow adapter 520 and the process gases are mixed in the outlet cavity 221.

[0079] The flow adapter 520 may be made of a similar or different material from manifold 515. In one or more embodiments, the flow adapter 520 is formed of a metal (such as aluminum or stainless steel, an oxide thereof, or a treated surface thereof), a ceramic, graphite, silicon carbide (SiC), quartz (such as transparent quartz or opaque quartz), and / or other materials. Interior surfaces of flow adapter 520 may be coated with one or more materials to protect flow adapter 520 from damage that may be caused by the process gases flowing therein. For example, the coating may include anodizing, yttrium oxide, and / or barium titanate. The plurality of conduits 507 flow plasma through the flow adapter 520 separated from the outlet cavity 221. The plurality of conduits 507 are disposed radially outward of the outlet cavity 221 .

[0080] The first baffle 521 may include one or more apertures or channels through which the process gases, such as precursors, may flow, which may increase uniformity of mixing of the process gases from the one or more flow openings 222. In one or more embodiments, the first baffle 521 is a plurality of baffles 531 of a baffle assembly 529.

[0081] The baffle assembly 529 includes a spacer 530 that can be coupled to the flow adapter 520. The spacer 530 may be or include ceramic and may be formed of a similar material as manifold 515 and / or flow adapter 520. The spacer 530 may include a central opening 232 therethrough. The central opening 232 (e.g., an aperture) can include a taper. A portion of central opening 232 adjacent the outlet cavity 221 may have a diameter equal to or similar to a diameter of the outlet cavity 221. The baffle assembly 529 includes a mixing manifold 535 that may be coupled to the spacer 530 opposite the flow adapter 520.

[0082] The mixing manifold 535 includes a baffle chamber 238 (such as a central channel), which may extend from first end 236 to second end 237 and may be configured to deliver process gases into the processing chamber 100. The mixing manifold 535 can also flow one or more secondary process gases that can be different in composition than the one or more process gases supplied through the one or more flow openings 222. The mixing manifold 535 may provide a second mixing stage. For example, in the mixing manifold 535 the one or more secondary process gases can be mixed with the process gases supplied through the one or more flow openings 222 and the plasma gases supplied from the plasma source 510.

[0083] The baffle assembly 529 is coupled to the processing chamber 100. The plasma source 510 is part of a plasma source assembly 501. The flow adapter 520 is coupled between the plasma source assembly 501 and the baffle assembly 529. The plasma source assembly 501 is operable to supply a plasma gas to the processing volume 126. The flow adapter 520 is operable to supply one or more process gases through the baffle assembly 529 to the processing volume 126.

[0084] In one or more embodiments, the one or more secondary process gases supplied through a sidewall of the mixing manifold 535 include an inert gas (such as argon or helium), one or more etching precursors (such as one or more hydrogen-containing precursors, one or more fluorine-containing precursors, and / or one or more halogen-containing precursors), one or moreselectivity precursors, one or more dopant precursors, and / or one or more other precursor(s). In one or more embodiments, the one or more process gases supplied through a sidewall of the flow adapter 520 include an inert gas (such as argon), one or more etching precursors (such as one or more hydrogencontaining precursors, one or more fluorine-containing precursors, and / or one or more halogen-containing precursors), one or more selectivity precursors, one or more dopant precursors, and / or one or more other precursor(s), and the plasma gas supplied from the plasma source 510 include plasma effluents (such as radicals, for example hydrogen radicals or other radicals). In one or more embodiments, the one or more secondary process gases supplied through a sidewall of the mixing manifold 535 has a different composition than the one or more process gases supplied through a sidewall of the flow adapter 520 and a different composition than the plasma (e.g., radicals) supplied to the conduits 507 from the manifold 515.

[0085] By mixing the various gases (such as precursors, for example etchants) prior to delivery to the processing chamber 100, the flow assembly 500 may provide an etchant having uniform properties prior to being distributed about a chamber and substrate. Additionally, by providing multiple stages of mixing, more uniformity of mixing may be provided for the process gases, such as precursors, which can facilitate uniform and adjustable processing. As an example, processes performed with the present application may have more uniform results across a substrate surface. The illustrated stack of components of the flow assembly 500 may limit particle accumulation by reducing the number of elastomeric seals included in the stack, which may degrade over time and produce particles that may affect processes being performed.

[0086] Similar to the first baffle 521 described previously, the flow assembly 500 may optionally include the plurality of baffles 531 , for example, a second baffle 523 and / or a third baffle 525. For example, the second baffle 523 may be seated in a recess formed in the baffle chamber 238 of the mixing manifold 535. The second baffle 523 may include one or more openings (such as apertures or channels) through which the process gases may flow, which may increase uniformity of mixing of the process gases. In one or moreembodiments, the second baffle 523 is part of the plurality of baffles 531 . In one or more embodiments, the plurality of baffles 531 includes the third baffle 525 disposed in a mixing chamber 546 of the mixing manifold 535. The mixing chamber 546 is downstream of the baffle chamber 238. Downstream as defined herein is the direction fluids flow from the one or more flow openings 222 to the processing volume 126. The manifold 515 can be electrically isolative to reduce or eliminate electrical current flowing between the plasma source 510 and the third baffle 525.

[0087] A fluid flows from the one or more flow openings 222 through the flow adapter 520 and through the plurality of baffles of the baffle assembly 529 and enters into the mixing chamber 546. The mixing chamber 546 is fluidly coupled to the processing chamber 100.

[0088] In the implementation shown in Figure 5, the processing chamber 100 is coupled to the plate stack 545. The plate stack 545 can be similar to the plate stack 245 described above. In one or more embodiments, the plate stack 245 includes the gasbox 250, the blocker plate 260, the faceplate 270, and the lid spacer 290. The components may be utilized to distribute a process gas or process gases, such as a precursor or set of precursors, through the chamber to provide a uniform delivery of process gases to a substrate for processing. The gasbox 250, the blocker plate 260, the faceplate 270, the ion filter 280, and the lid spacer 290 may be part of a lid assembly of the processing chamber 100. A heater 248 may be configured to heat the processing chamber 100. The heater 248 may be a plate heater or resistive element heater. In one or more embodiments, the plate stack 545 includes the ion filter 280 disposed between the plasma source 510 and the processing volume 126.

[0089] The gasbox 250 includes a gasbox chamber 251 disposed within the gasbox 250. The blocker plate 260 includes a blocker plate chamber 261 disposed within the blocker plate 260 and a plurality of openings 263 (such as apertures) therethrough. The plurality of openings 263 fluidly couples the gasbox chamber 251 to the blocker plate chamber 261. The faceplate 270 includes a plurality of openings 273 (such as apertures) therethrough. Theplurality of openings 273 fluidly couple the blocker plate chamber 261 to the processing volume 126.

[0090] In the implementation shown in Figure 5, the manifold 515 is fluidly coupled to the mixing chamber 546 is by the plurality of conduits 507 such that plasma from the plasma source 510 translates through the manifold 515 and bypasses the plurality of baffles 531 . The plasma bypasses the baffle assembly 529 by translating plasma into the mixing chamber 546 through an inlet 553. The inlet 553 is disposed downstream of the plurality of baffles 531 of the baffle assembly 529. In one or more embodiments, the inlet 553 is one of a plurality of inlets 553 of mixing manifold 535. The plurality of inlets 553 are coupled to the plurality of conduits 507. In one or more embodiments, the baffle assembly 529 is disposed centrally within the flow assembly 500 and the plurality of conduits 507 and the plurality of conduits 507 are disposed through the manifold 515, the spacer 530, and through the mixing manifold 535. The plurality of conduits 507 are disposed radially outward of the baffle assembly 529. The respective portion (e.g., opening 508a) of a conduit of the plurality of conduits 507 of the manifold 515 is aligned with a corresponding portion (e.g., opening 528b) of the spacer 530. The respective portion (e.g., opening 528b) of the spacer 530 is aligned with a respective portion (e.g., opening 528c) of the mixing manifold 535. In the implementation shown in Figure 5, the conduits 507 are integrally formed with the manifold 515 such that the conduits 507 are extensions of the manifold 515. When the manifold 515, the spacer 530, and the mixing manifold 535 are coupled, they form bypass pathways from the plasma source 510 and to the mixing chamber 546. The manifold 515 may be coupled to the spacer 530 with hardware such that a seal is formed at the interface of the manifold 515 and the spacer 530 that seals the plurality of conduits 507 and the plurality of baffles 531 from one another. The spacer 530 may be coupled to the mixing manifold 535 with hardware such that a seal is formed at the interface of the spacer 530 and the mixing manifold 535.

[0091] The plurality of conduits 507 are formed by cavities within the manifold 515, the spacer 530, and mixing manifold 535. Plasma enters the plurality of conduits 507 from the plasma source 510. The plasma translatesthrough the conduits 507, radially outward of the plurality of baffles 531 , and bypasses the plurality of baffles 531 before entering mixing chamber 546. Keeping the plurality of conduits 507 within the manifold 515, the spacer 530, and mixing manifold 535 reduces the size of the flow assembly 500 and enables additional components to be coupled to the plate stack 545.

[0092] The plasma bypassing the plurality of baffles 531 reduces the turbulence the plasma experiences because the plasma does not need to pass through plurality of baffles 531. By reducing turbulence along a flow path, plasma radicals recombining with flow path walls is reduced. For example, when hydrogen radicals pass through the plurality of conduits 507, turbulent flow rates reduce the number of hydrogen radicals that ultimately reach the processing volume 126.

[0093] In one or more embodiments, the second fluid bypasses the baffle assembly 229 and translates from the manifold 215 to the first conduit 208a and a second conduit 208b. For example, the second fluid translates symmetrically into the gasbox 250 disposed downstream of the baffle assembly 229.

[0094] In some embodiments, the flow assemblies described herein may enable a chemical etch treatment and a plasma etch treatment to occur in the same process chamber. By having separate flow paths, for example, a first flow path for a chemical etch fluid, and a second flow path for a plasma etch fluid, each treatment can be performed. Having separate flow paths also allow for preserving the reactive species and avoid or reduce plasma recombination where the electrons and ions of a plasma combine to form neutral atoms, whether by bulk recombination in the process chamber of the plasma due to turbulent flow paths of by surface recombination of the plasma due to reactive surfaces at the substrate surface. This reduction in plasma recombination enables an oxide removal operation and a carbon removal operation to occur in the same chamber. The bypass flow also facilitates flowing one or more gases, including, for example, the plasma fluid, in a manner with reduced oreliminated wear of certain flow components (such as the flow adapter 220 and the mixing manifold 235.

[0095] Benefits of the present disclosure include enhanced processing that includes flow of multiple gases; reduced or eliminated wear of flow components; reduced or eliminated recombination and / or depletion of gases; enhanced gas flow uniformities; more laminar gas flow; reduced number of chambers in a system; adjustability of process parameters (such gas flow rate, temperature, and / or growth rate and process volume size); reduced cleaning; increased throughput and efficiency; and reduced chamber downtime.

[0096] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations and / or properties of the processing chamber 100, the flow assembly 200a, the flow assembly 200b, the flow assembly 200c, the flow assembly 200d, and the method 300 shown in Figures 2A, 2B, 2C, 2D and 3 may be combined. Moreover, it is contemplated that one or more aspects disclosed herein may include some or all of the aforementioned benefits.

[0097] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

WHAT IS CLAIMED IS:1 . A flow assembly comprising: a baffle assembly coupled to a plasma source, the baffle assembly comprising: a plurality of baffles; and a mixing chamber disposed downstream of the plurality of baffles; and a manifold coupled to the plasma source and the baffle assembly, the manifold comprising a plurality of outlet openings, the plurality of outlet openings of the manifold configured to bypass the plurality of baffles.

2. The flow assembly of Claim 1 , further comprising a plate stack coupled to the plurality of outlet openings of the manifold by a plurality of conduits, the plate stack comprising: a gasbox coupled to the baffle assembly; a faceplate; and a spacer, the faceplate disposed between the spacer and the gasbox.

3. The flow assembly of Claim 2, wherein the plurality of conduits comprises: a first conduit coupled to the plate stack; and a second conduit disposed symmetrically to first conduit, the second conduit coupled to the plate stack.

4. The flow assembly of Claim 2, wherein the baffle assembly is fluidly coupled to the gasbox and the manifold is fluidly coupled to the gasbox by the plurality of conduits.

5. The flow assembly of Claim 2, wherein the baffle assembly is fluidly coupled to the gasbox and the manifold is fluidly coupled to the spacer by the plurality of conduits.

6. The flow assembly of Claim 1 , wherein the baffle assembly is disposed centrally and a plurality of conduits are coupled to the plurality of outlet openings, the plurality of conduits disposed radially outward of the baffle assembly.

7. The flow assembly of Claim 6, wherein the plurality of conduits further comprise an oxide coating disposed on an inner surface of the plurality of conduits.

8. The flow assembly of Claim 7, wherein the baffle assembly further comprises a nickel-alloy coating and the oxide coating is a hydrogen plasma radical resistant coating.

9. A processing chamber comprising: a chamber body at least partially defining a processing volume; and a flow assembly coupled to the chamber body, the flow assembly comprising: a manifold coupled to a plasma source, the manifold comprising a plurality of outlet openings; and a baffle assembly coupled to the manifold, the manifold disposed between the baffle assembly and the plasma source, the baffle assembly comprising: a plurality of baffles; and a mixing chamber disposed downstream of the plurality of baffles, the plurality of outlet openings of the manifold configured to bypass the plurality of baffles.

10. The processing chamber of Claim 9, further comprising a plate stack disposed between the baffle assembly and the chamber body, the plate stack comprising: a gasbox; a spacer disposed between the gasbox and the chamber body; a faceplate coupled to the spacer; anda blocker plate disposed between the gasbox and the faceplate.

11. The processing chamber of Claim 10, wherein the plate stack further comprises: an inlet disposed downstream of the plurality of baffles, the inlet fluidly coupled to the plurality of outlet openings by a plurality of conduits.

12. The processing chamber of Claim 11 , wherein the inlet is disposed through the spacer.

13. The processing chamber of Claim 9, further comprising an ion filter disposed between the plasma source and the processing volume.

14. A method of substrate processing comprising: disposing a substrate in a processing volume of a processing chamber; flowing a first fluid from a flow assembly into the processing volume, through a baffle assembly, to at least partially remove an oxidized material from the substrate in the processing chamber; and flowing a second fluid into the processing volume from the flow assembly, through a manifold of the flow assembly that bypasses one or more baffles, to at least partially remove a carbon material from the substrate in the processing chamber.

15. The method of Claim 14, wherein flowing the first fluid forms a treated substrate surface and the substrate stays in the processing chamber during a subsequent carbon removal operation performed on the treated substrate surface by the second fluid, the second fluid including hydrogen radicals in a plasma state.

16. The method of Claim 14, wherein the second fluid flows through a plurality of conduits to bypass the plurality of baffles and symmetrically flows into the processing volume.

17. The method of Claim 14, wherein the second fluid translates from a plasma source of the flow assembly, through a spacer, and into the processing volume, the spacer contacting a chamber body of the processing chamber.

18. The method of Claim 14, wherein the second fluid translates from the manifold to a first conduit and to a second conduit, the second fluid symmetrically translating through a plate stack before entering the processing volume, the second fluid having a laminar flow rate.

19. The method of Claim 14, wherein the first fluid flows centrally through the baffle assembly disposed on a plate stack and the second fluid translates radially outward of the first fluid.

20. The method of Claim 19, wherein the second fluid bypasses the baffle assembly by translating through the manifold to a first conduit and a second conduit, the second fluid translating symmetrically into a gasbox disposed downstream of the baffle assembly.

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