Capacitive humidity sensor and preparation method thereof, and electronic device
By using a doped layer as the capacitor electrode and the component that causes deformation in the humidity-sensitive part, the fabrication process of the capacitive humidity sensor is simplified, the cost is reduced, and the sensitivity is improved, solving the problems of complex processes and high costs in the prior art.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- CSMC TECH FAB2 CO LTD
- Filing Date
- 2025-07-11
- Publication Date
- 2026-05-21
AI Technical Summary
Existing capacitive humidity sensors have complex manufacturing processes and high costs.
By using a doped layer as the capacitor electrode and a humidity-sensitive part as the component that causes deformation due to the variable capacitance, a structure consisting of a first doped layer, a dielectric layer, and a second doped layer is formed. Humidity detection is achieved by utilizing the change in capacitor spacing caused by the weight change of the humidity-sensitive part, thus avoiding complex bonding processes.
The manufacturing process has been simplified, costs have been reduced, and the sensitivity and production efficiency of humidity sensors have been improved.
Smart Images
Figure CN2025108043_21052026_PF_FP_ABST
Abstract
Description
Capacitive humidity sensor and its preparation method, electronic equipment
[0001] Cross-reference to related applications
[0002] This application claims priority to Chinese Patent Application No. 202411648719.6, filed on November 18, 2024, entitled “Capacitive Humidity Sensor and Method for Fabrication Thereof, Electronic Device”, the entire contents of which are incorporated herein by reference for all purposes. Technical Field
[0003] This application relates to the field of humidity sensor technology, and in particular to a capacitive humidity sensor, its preparation method, and electronic equipment. Background Technology
[0004] Humidity sensing is important in many fields. In many applications, controlling humidity levels is beneficial. In others, simply knowing the humidity level is helpful. In many manufacturing environments, it is important that relative humidity does not rise above a certain level, otherwise the products being manufactured may be adversely affected. In many scientific environments, relative humidity must be considered when performing experiments. When handling certain types of integrated circuits, humidity levels can be closely monitored or controlled in cleanroom environments and in various deposition chambers and processing equipment.
[0005] Humidity sensors come in various forms. They can include resistive humidity sensors, thermally conductive humidity sensors, capacitive humidity sensors, and others. However, current capacitive humidity sensors suffer from complex manufacturing processes and high costs. Summary of the Invention
[0006] Therefore, it is necessary to provide a capacitive humidity sensor, its preparation method, and an electronic device to address the above problems.
[0007] To achieve the above objectives, in a first aspect, this application provides a capacitive humidity sensor, comprising:
[0008] The first doped layer has a first groove on one side and an interface surrounding the first groove;
[0009] A dielectric layer is disposed at the interface;
[0010] The second doped layer is disposed on the side of the dielectric layer opposite to the first doped layer and covers the groove opening of the first groove to form a cavity;
[0011] A humidity-sensitive portion is disposed on the side of the second doped layer opposite to the first doped layer; at least a portion of the orthographic projection of the humidity-sensitive portion onto the first doped layer is located within the first groove.
[0012] A first electrical connection structure is electrically connected to the first doped layer;
[0013] The second electrical connection structure is electrically connected to the second doped layer.
[0014] In one embodiment, the first doped layer and the second doped layer have the same doping type;
[0015] And / or, the materials of the first doped layer and the second doped layer include at least one of polycrystalline silicon and monocrystalline silicon.
[0016] In one embodiment, the entire orthographic projection of the humidity-sensitive portion onto the first doped layer lies within the first groove.
[0017] In one embodiment, the thickness of the dielectric layer is between 0.5 μm and 2 μm;
[0018] And / or, the material of the dielectric layer includes silicon oxide.
[0019] In one embodiment, the thickness of the second doped layer located on the dielectric layer is not equal to the thickness of the second doped layer located on the first groove.
[0020] In one embodiment, a second groove is provided on the side surface of the second doped layer away from the dielectric layer, the second groove penetrating at least through the second doped layer and the dielectric layer, and exposing a portion of the first doped layer;
[0021] A portion of the first electrical connection structure is located within the second groove and is in contact with the exposed first doped layer.
[0022] In one embodiment, the second electrical connection structure is disposed on the side of the second doped layer away from the first doped layer.
[0023] The orthographic projection of the first electrical connection structure onto the first doped layer and the orthographic projection of the second electrical connection structure onto the first doped layer are located on opposite sides of the first groove, respectively.
[0024] Secondly, this application provides a method for manufacturing a capacitive humidity sensor, comprising:
[0025] A first doped layer, a dielectric layer, and a second doped layer are formed; wherein, a first groove and an interface are provided on one side of the first doped layer, the dielectric layer is disposed on the interface, the second doped layer is disposed on the side of the dielectric layer away from the first doped layer, and the second doped layer covers the opening of the first groove to form a cavity.
[0026] A humidity-sensitive portion, a first electrical connection structure, and a second electrical connection structure are formed; wherein the humidity-sensitive portion is disposed on the side of the second doped layer opposite to the first doped layer, and at least a portion of the orthographic projection of the humidity-sensitive portion on the first doped layer is located within the first groove; the first electrical connection structure is electrically connected to the first doped layer; and the second electrical connection structure is electrically connected to the second doped layer.
[0027] In one embodiment, forming the first doped layer, the dielectric layer, and the second doped layer includes:
[0028] Forming the first doped material layer;
[0029] Etching holes are formed on the first doped material layer;
[0030] The first doped material layer is annealed to form a first morphological body with a cavity;
[0031] A second doped material layer is formed on the first morphological body to form a second morphological body;
[0032] The dielectric layer is formed in the second morphology, and the dielectric layer divides the second morphology into the first doped layer and the second doped layer.
[0033] Thirdly, this application provides an electronic device including the capacitive sensor described in any of the first aspects.
[0034] The capacitive humidity sensor, its fabrication method, and electronic device provided in this application utilize a first doped layer and a second doped layer, which function as the two capacitive electrodes of the sensor. Air within the cavity acts as the medium. Upon sensing humidity, the weight of the humidity-sensitive element changes, causing deformation of the second doped layer. This change in the spacing between the first and second doped layers within the cavity leads to a change in capacitance, thereby achieving humidity detection. Compared to traditional humidity sensors fabricated using bonding processes, the capacitive humidity sensor provided in this application uses doped layers as capacitive electrodes and a humidity-sensitive element as the variable capacitor-induced deformation component, offering advantages such as simple fabrication and low cost. Attached Figure Description
[0035] To more clearly illustrate the technical solutions in the embodiments or exemplary embodiments of this application, the drawings used in the description of the embodiments or exemplary embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0036] Figure 1 is a cross-sectional structural diagram of a capacitive humidity sensor provided in an embodiment of this application.
[0037] Figure 2 is a schematic flowchart of a method for preparing a capacitive humidity sensor according to an embodiment of this application.
[0038] Figure 3 is a schematic flowchart of the preparation method of S100 shown in Figure 2.
[0039] Figures 4-7 are schematic diagrams of the components during the preparation process shown in Figure 2.
[0040] Explanation of reference numerals in the attached figures: 10, capacitive humidity sensor; 11, first doped layer; 111, first groove; 112, interface; 12, dielectric layer; 13, second doped layer; 14, humidity-sensitive part; 15, first electrical connection structure; 16, second electrical connection structure; 17, cavity; 18, second groove; 20, first doped material layer; 30, etched hole; 40, second doped material layer. Detailed Implementation
[0041] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.
[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
[0043] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, parts, regions, layers, doping types, and / or portions, these elements, parts, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, part, region, layer, doping type, or portion from another element, part, region, layer, doping type, or portion. Therefore, without departing from the teachings of this application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
[0044] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as “below,” “under,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.
[0045] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, in this specification, the term “and / or” includes any and all combinations of the associated listed items.
[0046] Embodiments of the application are described herein with reference to cross-sectional views illustrating ideal embodiments (and intermediate structures), thus allowing for the expectation of variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the application should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing techniques. For instance, implantation regions shown as rectangular typically have rounded or curved features at their edges and / or implantation concentration gradients, rather than a binary change from implantation regions to non-implantation regions. Similarly, buried regions formed by implantation can result in some implantation in the region between the buried region and the surface traversed during implantation. Therefore, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of regions of the device and do not limit the scope of the application.
[0047] In a first aspect, referring to FIG1, an embodiment of this application provides a capacitive humidity sensor 10, which includes: a first doped layer 11, a dielectric layer 12, a second doped layer 13, a humidity-sensitive part 14, a first electrical connection structure 15, and a second electrical connection structure 16.
[0048] The first doped layer 11 has a first groove 111 on one side and an interface 112 surrounding the first groove 111. A dielectric layer 12 is disposed on the interface 112, and the orthographic projection of the dielectric layer 12 on the first doped layer 11 is located on the interface 112, and does not coincide with the first groove 111. A second doped layer 13 is disposed on the side of the dielectric layer 12 away from the first doped layer 11, and covers the opening of the first groove 111 to form a cavity 17. A humidity-sensitive part 14 is disposed on the side of the second doped layer 13 away from the first doped layer 11; at least a portion of the orthographic projection of the humidity-sensitive part 14 on the first doped layer 11 is located within the first groove 111. A first electrical connection structure 15 is electrically connected to the first doped layer 11. A second electrical connection structure 16 is electrically connected to the second doped layer 13.
[0049] It should be noted here that interface 112 can be understood as the interface connecting the first doped layer 11 and the dielectric layer 12. The orthographic projection is the projection along the vertical direction of Figure 1. The humidity-sensitive part 14 refers to a component made of a humidity-sensitive material. The material of the humidity-sensitive part 14 can be polymers, ceramic materials, metal oxides, graphene and carbon nanotubes, composite materials (such as composites of polymers and metal oxide nanoparticles), bio-based materials, etc. Among them, polymers include polyimide, polyvinyl alcohol, polyacrylic acid, and polyurethane, etc. Ceramic materials include barium titanate, lead zirconate titanate, etc. Metal oxides include tin dioxide, zinc oxide, etc. Bio-based materials include cellulose, chitosan, etc.
[0050] In this embodiment, the first doped layer 11 and the second doped layer 13 are equivalent to the two capacitive electrodes of a capacitive sensor. Air in the cavity 17 serves as the medium. When the humidity-sensitive part 14 senses moisture, its weight changes, causing the second doped layer 13 to deform. This causes a change in the distance between the first doped layer 11 and the second doped layer 13 within the cavity 17. According to the capacitance formula (see below), a change in the distance between the first doped layer 11 and the second doped layer 13 within the cavity 17 (d in the same formula) will cause a change in the capacitance value (C in the same formula), thereby achieving humidity detection.
[0051] Compared to humidity sensors fabricated using bonding processes in traditional technologies, the capacitive humidity sensor 10 provided in this application uses a doped layer as a capacitor electrode and a humidity-sensitive part 14 as a component that causes deformation due to variable capacitance. It does not require a complex bonding process and has the advantages of simple manufacturing process and low cost.
[0052] In one embodiment, the first doped layer 11 and the second doped layer 13 have the same doping type. This avoids using too many doping types during the fabrication of the capacitive humidity sensor 10, which helps reduce doping difficulty and fabrication cost. It is understood that the first doped layer 11 and the second doped layer 13 can be N-type or P-type.
[0053] In one embodiment, the first doped layer 11 and the second doped layer 13 are made of at least one of polycrystalline silicon and monocrystalline silicon. In one example, the first doped layer 11 and the second doped layer 13 are doped polycrystalline silicon. In another example, the first doped layer 11 and the second doped layer 13 are doped monocrystalline silicon.
[0054] In one embodiment, the humidity-sensitive part 14 is positioned within the first groove 111, with the entire orthographic projection of the first doped layer 11. This effectively positions the humidity-sensitive part 14 directly above the first groove 111 (or cavity 17). When the weight of the humidity-sensitive part 14 changes, the first doped layer 11 above the cavity 17 is more prone to deformation, thereby improving the sensitivity of the capacitive humidity sensor 10.
[0055] In a preferred embodiment, the humidity-sensitive part 14 is located in the middle directly above the first groove 111 (or cavity 17).
[0056] In one embodiment, the thickness of the dielectric layer 12 is between 0.5 μm and 2 μm. Exemplarily, the thickness of the dielectric layer 12 can be 0.5 μm, 0.8 μm, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, 2 μm, or between any two of the above values. This allows the first doped layer 11 and the second doped layer 13 to have better insulation properties, and also helps to reduce the overall thickness of the capacitive humidity sensor 10.
[0057] In one embodiment, the dielectric layer 12 is made of silicon oxide. This helps to reduce manufacturing costs.
[0058] In one embodiment, a second groove 18 is provided on the surface of the second doped layer 13 away from the dielectric layer 12. The second groove 18 penetrates at least through the second doped layer 13 and the dielectric layer 12, exposing a portion of the first doped layer 11. A portion of the first electrical connection structure 15 is located within the second groove 18 and contacts the exposed first doped layer 11. By providing the second groove 18, a portion of the first doped layer 11 can be exposed, thereby facilitating the electrical connection of the first electrical connection structure 15 to the first doped layer 11.
[0059] In one embodiment, the second electrical connection structure 16 is disposed on the side of the second doped layer 13 away from the first doped layer 11. Thus, both the first electrical connection structure 15 and the second electrical connection structure 16 can be disposed on top of the capacitive humidity sensor 10, facilitating wiring and connecting the first electrical connection structure 15 and the second electrical connection structure 16 to external circuitry.
[0060] In one embodiment, the orthographic projection of the first electrical connection structure 15 onto the first doped layer 11 and the orthographic projection of the second electrical connection structure 16 onto the first doped layer 11 are located on opposite sides of the first groove 111, respectively. As shown in FIG1, the first electrical connection structure 15 and the second electrical connection structure 16 are located on opposite sides of the first groove 111 along the horizontal direction.
[0061] In this way, the space at the top of the capacitive humidity sensor 10 can be fully utilized to arrange the first electrical connection structure 15 and the second electrical connection structure 16 in a reasonable manner, while minimizing the electrical interference between the first electrical connection structure 15 and the second electrical connection structure 16.
[0062] In one embodiment, the first electrical connection structure 15 and the second electrical connection structure 16 are made of aluminum. This helps reduce manufacturing costs. It should be noted that the first electrical connection structure 15 and the second electrical connection structure 16 can also be made of other metals such as copper, silver, or tin.
[0063] In one embodiment, the thickness of the second doped layer 13 located on the dielectric layer 12 may be equal to or unequal to the thickness of the second doped layer 13 located on the cavity 17.
[0064] In a preferred embodiment, the thickness of the second doped layer 13 on the dielectric layer 12 is not equal to the thickness of the second doped layer 13 on the cavity 17; that is, the thickness of the second doped layer 13 on the dielectric layer 12 is not equal to the thickness of the second doped layer 13 on the first groove 111. Thus, when fabricating the dielectric layer 12 using the Smart Cut process, excessively high process precision is not required, which helps to reduce the fabrication difficulty of the dielectric layer 12.
[0065] Secondly, referring to FIG2, this application embodiment provides a method for manufacturing a capacitive humidity sensor 10, which specifically includes the following steps:
[0066] S100: Form a first doped layer 11, a dielectric layer 12, and a second doped layer 13. The first doped layer 11 has a first groove 111 on one side and an interface 112 surrounding the first groove 111. The dielectric layer 12 is disposed at the interface 112. The second doped layer 13 is disposed on the side of the dielectric layer 12 away from the first doped layer 11, and the second doped layer 13 covers the opening of the first groove 111 to form a cavity 17.
[0067] S200: Form a humidity-sensitive portion 14, a first electrical connection structure 15, and a second electrical connection structure 16. The humidity-sensitive portion 14 is disposed on the side of the second doped layer 13 opposite to the first doped layer 11, and at least a portion of the orthographic projection of the humidity-sensitive portion 14 onto the first doped layer 11 is located within the first groove 111; the first electrical connection structure 15 is electrically connected to the first doped layer 11; and the second electrical connection structure 16 is electrically connected to the second doped layer 13.
[0068] The fabrication method provided in this application embodiment uses a first doped layer 11 and a second doped layer 13, which function as two capacitive electrodes of a capacitive sensor. Air in the cavity 17 serves as the medium. When the humidity-sensitive part 14 senses moisture, its weight changes, causing the second doped layer 13 to deform. This changes the spacing between the first doped layer 11 and the second doped layer 13 within the cavity 17, resulting in a change in capacitance, thereby achieving humidity detection. Compared to traditional humidity sensors fabricated using bonding processes, the capacitive humidity sensor 10 provided in this application embodiment uses doped layers as capacitive electrodes and the humidity-sensitive part 14 as the component causing deformation due to variable capacitance. It eliminates the need for complex bonding processes, offering advantages such as short fabrication cycle, simple fabrication process, and low cost.
[0069] In one embodiment, referring to FIG3, S100: forming a first doped layer 11, a dielectric layer 12, and a second doped layer 13 specifically includes the following steps:
[0070] S110: Forming the first doped material layer 20. It is understood that the first doped material layer 20 can be fabricated using methods such as Chemical Vapor Deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include Plasma Enhanced Chemical Vapor Deposition (PECVD), Laser Chemical Vapor Deposition (LCVD), and Low Pressure Chemical Vapor Deposition (LPCVD).
[0071] S120: Forming etched holes 30 on the first doped material layer 20. Specifically, referring to FIG4, multiple etched holes 30 arranged in an array can be etched on the first doped material layer 20 by using the SON (Silicon-On-Nothing) process.
[0072] S130: The first doped material layer 20 is annealed to form a first morphology with a cavity 17. During the annealing process, the arrayed etched holes 30 become interconnected and form the structure shown in Figure 5.
[0073] S140: A second doped material layer 40 is formed on the first morphology to form a second morphology. Referring to FIG6, the second doped material layer 40 can be fabricated using an epitaxial process.
[0074] S150: A dielectric layer 12 is formed in the second morphology, which divides the second morphology into a first doped layer 11 and a second doped layer 13. Referring to FIG7, the dielectric layer 12 can be introduced into the second morphology using a Smart Cut process.
[0075] It is understandable that the first doped layer 11, the dielectric layer 12, and the second doped layer 13 can also be fabricated through other process sequences.
[0076] In one embodiment, S200: forming the humidity-sensitive part 14, the first electrical connection structure 15, and the second electrical connection structure 16 specifically includes the following steps:
[0077] S210: A humidity-sensitive portion 14 is formed on the second doped layer 13. Specifically, a humidity-sensitive material can be coated on the second doped layer 13 to form the humidity-sensitive portion 14.
[0078] S220: Etch the second groove 18 on the second doped layer 13. Specifically, the second groove 18 can be formed by etching using a dry process or a wet process.
[0079] S230: Fabricate the first electrical connection structure 15 and the second electrical connection structure 16.
[0080] Thirdly, embodiments of this application provide an electronic device, specifically, the electronic device may be an integrated circuit package. The integrated circuit package includes an integrated circuit die, which includes a capacitive humidity sensor 10, a reference capacitor, an analog-to-digital converter, and a microcontroller. The analog-to-digital converter and the microcontroller may be formed from transistors formed in the integrated circuit die. The transistors may be formed from a single-crystal semiconductor substrate located in the integrated circuit die and through a metal interconnect layer and a dielectric layer in the integrated circuit die. The capacitive humidity sensor 10 and the reference capacitor may be formed in the upper part of the integrated circuit die above the semiconductor substrate.
[0081] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.
[0082] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0083] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A capacitive humidity sensor, characterized by include: The first doped layer has a first groove on one side and an interface surrounding the first groove; A dielectric layer is disposed at the interface; The second doped layer is disposed on the side of the dielectric layer opposite to the first doped layer and covers the groove opening of the first groove to form a cavity; The humidity-sensitive part is disposed on the side of the second doped layer opposite to the first doped layer; At least a portion of the humidity-sensitive portion is orthogonally projected into the first groove in the first doped layer; A first electrical connection structure is electrically connected to the first doped layer; The second electrical connection structure is electrically connected to the second doped layer.
2. The capacitive humidity sensor of claim 1, wherein, The first doped layer and the second doped layer have the same doping type; And / or, the materials of the first doped layer and the second doped layer include at least one of polycrystalline silicon and monocrystalline silicon.
3. The capacitive humidity sensor of claim 1, wherein, The entire orthographic projection of the humidity-sensitive part onto the first doped layer lies within the first groove.
4. The capacitive humidity sensor of claim 1, wherein, The thickness of the dielectric layer is between 0.5 μm and 2 μm; And / or, the material of the dielectric layer includes silicon oxide.
5. The capacitive humidity sensor of claim 1, wherein, The thickness of the second doped layer located on the dielectric layer is not equal to the thickness of the second doped layer located on the first groove.
6. The capacitive humidity sensor of claim 1, wherein, The second doped layer has a second groove on the side of its surface away from the dielectric layer. The second groove penetrates at least the second doped layer and the dielectric layer and exposes a portion of the first doped layer. A portion of the first electrical connection structure is located within the second groove and is in contact with the exposed first doped layer.
7. The capacitive humidity sensor of claim 6, wherein, The second electrical connection structure is disposed on the side of the second doped layer away from the first doped layer; The orthographic projection of the first electrical connection structure onto the first doped layer and the orthographic projection of the second electrical connection structure onto the first doped layer are located on opposite sides of the first groove, respectively.
8. A method of manufacturing a capacitive humidity sensor, characterized by, include: A first doped layer, a dielectric layer, and a second doped layer are formed; wherein, a first groove and an interface are provided on one side of the first doped layer, the dielectric layer is disposed on the interface, the second doped layer is disposed on the side of the dielectric layer away from the first doped layer, and the second doped layer covers the opening of the first groove to form a cavity. A humidity-sensitive portion, a first electrical connection structure, and a second electrical connection structure are formed; wherein the humidity-sensitive portion is disposed on the side of the second doped layer opposite to the first doped layer, and at least a portion of the orthographic projection of the humidity-sensitive portion on the first doped layer is located within the first groove; the first electrical connection structure is electrically connected to the first doped layer; and the second electrical connection structure is electrically connected to the second doped layer.
9. The method of claim 8, wherein the method further comprises, The formation of the first doped layer, the dielectric layer, and the second doped layer includes: Forming the first doped material layer; Etching holes are formed on the first doped material layer; The first doped material layer is annealed to form a first morphological body with a cavity; A second doped material layer is formed on the first morphological body to form a second morphological body; The dielectric layer is formed in the second morphology, and the dielectric layer divides the second morphology into the first doped layer and the second doped layer.
10. An electronic device, comprising: Including the capacitive humidity sensor as described in any one of claims 1-7.