Semiconductor component and method for producing a semiconductor component

Abstract

The invention relates to a semiconductor component (1) comprising the following: - a semiconductor chip (2) - at least one functional layer (3) which has a physical function and is provided on a surface (2A, 2B) of the semiconductor chip (2), and - a distribution of functional particles (4) which have a material corresponding to the functional layer (3) and / or a physical function corresponding to the functional layer (3), the distribution of functional particles (4) being located at least partly in a semiconductor component (1) region which does not laterally overlap with the functional layer (3). The invention further relates to a method for producing a semiconductor component (1).

Description

[0001] 2024PF00735 October 27, 2025

[0002] P2024, 0713 WO N - 1 -

[0003] Description

[0004] Semiconductor component and method for manufacturing a semiconductor component

[0005] A semiconductor device with a semiconductor chip and a method for manufacturing a semiconductor device are described. For example, the semiconductor chip is suitable for emitting electromagnetic radiation with a peak wavelength in the ultraviolet to infrared, for example, in the visible spectral range. The peak wavelength can denote the maximum of the spectral distribution of the emitted radiation. Furthermore, the semiconductor device can be designed to emit radiation with different color components, such as white light. However, it is also possible that the semiconductor chip or semiconductor device is suitable for detecting electromagnetic radiation.

[0006] Furthermore, it is possible that the semiconductor chip is designed as an integrated electronic circuit.

[0007] For example, a semiconductor chip or semiconductor component is a micro-component characterized by a comparatively small size with dimensions in the micrometer range.

[0008] For the production of functional layers in semiconductor devices, such as electrical contact layers or conversion layers, which can convert at least part of a radiation into radiation of a different wavelength, the use of manufacturing processes such as so-called "Ultra Precise Dispensing", in which a thin cannula is used to dispense pastes, or the doctor blade application of pastes is possible. 2024PF00735 October 27, 2025

[0009] P2024, 0713 WO N - 2 -

[0010] This is conceivable, as these methods allow the deposition of defined, small amounts or volumes of material and are therefore suitable for the production of microcomponents. However, these processes are either slow and therefore expensive, or not yet industrialized. With other methods, such as so-called "impulse printing," in which the paste is removed by means of a heat pulse via an electrical heating resistor, or laser ablation of the paste, the deposition of defined, small amounts or volumes of material is not readily possible.

[0011] One problem to be solved is to specify a semiconductor device, for example a micro-semiconductor device, with improved physical properties. Another problem to be solved is to specify a method for manufacturing a semiconductor device, for example a micro-semiconductor device, with improved physical properties.

[0012] These tasks are solved, among other things, by a semiconductor device and a method with the features of the independent claims.

[0013] According to at least one embodiment of a semiconductor device, it comprises a semiconductor chip. The semiconductor chip can be an optoelectronic semiconductor chip, for example, a radiation-emitting or radiation-detecting semiconductor chip. The radiation-emitting semiconductor chip can have an active zone suitable for generating radiation. The active zone can be 2024PF00735 27 October 2025

[0014] P2024, 0713 WO N - 3 -

[0015] The device is designed to emit electromagnetic radiation during operation with a peak wavelength in the ultraviolet to infrared, for example, the visible spectral range. Accordingly, the radiation-detecting semiconductor chip can have an active zone suitable for absorbing radiation in the aforementioned spectral range.

[0016] Furthermore, the semiconductor chip may be a switching element that incorporates an integrated electronic circuit.

[0017] The semiconductor chip can have a sequence of semiconductor layers with a first and second semiconductor region of different conductivity. The active zone can optionally be located between the first and second semiconductor regions. The first and second semiconductor regions, as well as the active zone, can each consist of one or more semiconductor layers. The semiconductor layers can be epitaxially deposited onto a growth substrate. The growth substrate can remain in the semiconductor chip or be at least partially detached. For example, the first semiconductor region might have n-type conductivity, while the second semiconductor region has p-type conductivity. However, it is also possible for the first semiconductor region to have p-type conductivity and the second semiconductor region to have n-type conductivity.

[0018] Materials based on arsenide, phosphide, or nitride compound semiconductors are suitable for the semiconductor regions or layers of the semiconductor layer sequence. “Based on arsenide, phosphide, or nitride compound semiconductors 2024PF00735 October 27, 2025”

[0019] P2024, 0713 WO N - 4 -

[0020] "Based" in this context means that the semiconductor layers Al n Ga m Initiative- n-m As, Al n Ga m Initiative n-m P or Al n Ga m Initiative n-m The material contains N, where 0 < n < 1, 0 < m < 1, and n+m < 1. This material does not necessarily have to have a mathematically exact composition according to the formula above. Rather, it can contain one or more dopants as well as additional components that contribute to the characteristic physical properties of AlnGamlnx-n-mAs-, AlnGamlnx-n- mThe structure of P- or AlnGamlni-n-mN materials remains essentially unchanged. For the sake of simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, As or P or N), even though these may be partially replaced by small amounts of other substances. Furthermore, silicon, for example, is also a possible material for a semiconductor chip, such as a detector or an integrated circuit.

[0021] For example, the semiconductor chip is a micro-component, such as a micro-LED (or micro-LED, pLED, p-LED, uLED, u-LED) or a micro-IC (micro-integrated circuit or pIC). The semiconductor chip is characterized by its particularly small size, with dimensions in the micrometer range, preferably with dimensions of no more than 1000 pm.

[0022] According to at least one embodiment, the semiconductor device comprises at least one functional layer that performs a physical function. For example, the physical function can be electrical or optical. The at least one functional layer can be arranged on a surface of the semiconductor chip. 2024PF00735 October 27, 2025

[0023] P2024, 0713 WO N 5

[0024] According to at least one embodiment, the semiconductor device comprises a distribution of functional particles that have a material corresponding to the functional layer and / or a physical function corresponding to the functional layer. In other words, the distribution of functional particles can, for example, have an optical or electrical function and / or be made of the same material as the functional layer.

[0025] For example, the distribution of functional particles is located at least partially in a region of the semiconductor device that does not laterally overlap with the functional layer. "Lateral" can refer to a direction that runs in or parallel to a principal plane of extension of the semiconductor device. Such a distribution of functional particles is due to the method described in more detail below, which enables the targeted deposition of individual functional particles on the semiconductor chip.

[0026] According to at least one embodiment of a semiconductor device, this includes:

[0027] - a semiconductor chip,

[0028] - at least one functional layer that has a physical function and is located on a surface of the semiconductor chip,

[0029] - a distribution of functional particles, wherein the functional particles have a material corresponding to the functional layer and / or a physical function corresponding to the functional layer, and wherein

[0030] The distribution of the functional particles is located at least partially in an area of ​​the semiconductor device that does not laterally overlap with the functional layer. 2024PF00735 October 27, 2025

[0031] P2024, 0713 WO N - 6 -

[0032] For example, functional particles may be located to the side of the semiconductor chip or, in a top view of the semiconductor component, to the side of the semiconductor chip.

[0033] According to at least one embodiment or configuration, the functional particles have a mean diameter of no more than 25 pm. For example, the "mean diameter" can be understood as the median of the particle diameter. The term "diameter" does not restrict the shape of the functional particles to a spherical shape or the shape of a solid of revolution. Rather, the functional particles can also have shapes that deviate from these, whereby the "diameter" accordingly denotes the greatest possible distance between two points on the surface of the functional particle perpendicular to a principal axis. The possibility of targeted transfer of individual functional particles using the method described below allows, among other things, the transfer of defined, comparatively small volumes of the material from which the functional particles are formed, due to the small particle size.

[0034] According to at least one embodiment or configuration, the functional particles are arranged in a single layer. In other words, it is possible that one layer of functional particles is not followed by another layer of functional particles.

[0035] According to at least one embodiment or configuration, at least some of the functional particles are separated from each other by spaces, such that at least some of the functional particles have a distance to the next functional particle that is greater than zero. In other words, 2024PF00735 October 27, 2025

[0036] P2024, 0713 WO N - 7 -

[0037] The surface coverage by the functional particles can be less than 100%.

[0038] The type of distribution of the functional particles or the area coverage by the functional particles, as well as the comparatively small material volume of the distribution of the functional particles, are characteristics of the method described below, which enables the transfer of individual functional particles.

[0039] According to at least one embodiment or configuration, the at least one functional layer is a conversion layer. For example, the functional layer, which is a conversion layer, is arranged on a radiation-exit side of the semiconductor chip. The radiation-exit side can be a side of the semiconductor chip from which a substantial portion of the radiation generated in the active zone exits the semiconductor chip. The conversion layer is designed to convert at least a portion of the primary radiation generated in the active zone, which has a first peak wavelength or first wavelength distribution, into secondary radiation, which has a second peak wavelength or second wavelength distribution, wherein the first and second peak wavelengths or first and second wavelength distributions differ from each other, and the second peak wavelength is, for example, greater than the first peak wavelength.Thus, the optoelectronic semiconductor device can emit white light during operation, for example. The conversion layer can be a ceramic plate made of conversion material or a plastic layer with embedded conversion particles. Furthermore, see 2024PF00735, October 27, 2025.

[0040] P2024, 0713 WO N - 8 -

[0041] For example, glass or crystal plates with a layer of conversion material are also conceivable.

[0042] Suitable materials for the conversion material include, for example, quantum dot phosphors, YAG (yttrium aluminum garnet), which may be doped with Ce and / or Gd, white phosphors, amber, green and red phosphors, cyan / mint phosphors and infrared phosphors.

[0043] Furthermore, if at least one functional layer is a conversion layer, at least some of the functional particles can be conversion particles. It is possible that the conversion particles are partially arranged on the conversion layer, with a distribution of the conversion particles extending laterally beyond the conversion layer. The functional layer and functional particles can form a single functional element or conversion element. For example, the distribution of the conversion particles can be used to subsequently modify a color coordinate to achieve a predetermined color coordinate.While the functional particles and the functional layer may have the same physical or optical function, which consists, for example, in the conversion of at least part of the primary radiation into secondary radiation, it is not necessary, but possible, that the distribution of the functional particles and the functional layer contain the same conversion material.

[0044] According to at least one embodiment or configuration, the at least one functional layer is an electrical contact layer. The at least one functional layer, which is an electrical contact layer, can be located on a mounting side 2024PF00735 27 October 2025

[0045] P2024, 0713 WO N 9

[0046] The contact layer is located on the semiconductor chip. The mounting side can refer to the side of the semiconductor chip where it is mounted, for example, on a substrate. The electrical contact layer can be a continuous layer. A continuous layer can have a single polarity during operation. However, it is also possible for the contact layer to be a structured layer with different contact areas. These different contact areas can have different polarities during operation. The structure of the contact layer can depend on the chip design, for example, with a continuous contact layer being appropriate for a vertical chip design, while a structured contact layer is appropriate for a horizontal chip design.

[0047] According to at least one embodiment or configuration, in the case that at least one functional layer is an electrical contact layer, at least some of the functional particles are electrically conductive particles.

[0048] For example, the electrically conductive particles are located only in an area of ​​the semiconductor device that does not laterally overlap with the functional layer. This may be due to the fact that only a portion of the functional particles are used to create the functional layer.

[0049] Some particles are melted, thereby losing their particle shape, while the remaining particles retain their shape. While the functional particles and the functional layer may contain the same electrically conductive material, the physical function of electrical contact is primarily fulfilled by the functional layer. 2024PF00735 October 27, 2025

[0050] P2024, 0713 WO N - 10 -

[0051] According to at least one embodiment or configuration, the electrically conductive particles are solid bodies, i.e., not hollow bodies. The electrically conductive particles can each be formed from a homogeneous, electrically conductive material, or they can have a core of an electrically conductive or insulating material and a coating of an electrically conductive or insulating material. Solder materials such as tin (Sn) or tin-based compounds, for example, SnAgCu, SnBi, or In, or In-based compounds such as InSn, are particularly suitable for the homogeneous, electrically conductive material. Furthermore, the core can be formed from an electrically conductive material such as copper (Cu) or nickel (Ni), or from an electrically insulating material such as a plastic, for example, polystyrene. A quantum dot core is also a possible option.Furthermore, electrically insulating materials such as passivation materials and electrically conductive materials such as Au or Ni, and solder materials such as Sn or Sn-based compounds, for example SnAgCu, SnBi, as well as In or In-based compounds such as InSn, are suitable for the coating. Using various manufacturing methods described below, it is possible to produce electrically conductive particles that are predominantly uniform, i.e., of the same size and shape.

[0052] According to at least one embodiment or configuration, the semiconductor device comprises at least one functional layer, which is a conversion layer, and at least one functional layer, which is an electrical contact layer, and distributions of functional particles, each having a material corresponding to one of the functional layers and / or a physical function corresponding to one of the functional layers, wherein 2024PF00735 27 October 2025

[0053] P2024, 0713 WO N - 11 -

[0054] the distributions of the functional particles are located at least partially in areas of the semiconductor device that do not laterally overlap with the functional layers.

[0055] According to at least one embodiment or configuration, the semiconductor device comprises a carrier element on which the semiconductor chip is arranged, for example, with its mounting side. The semiconductor chip can be electrically connected to the carrier element by means of at least one functional layer, which is an electrical contact layer. For example, the first semiconductor region of the semiconductor chip can be arranged on a side facing away from the carrier element. The second semiconductor region can be arranged on a side facing the carrier element. The carrier element can have electrically conductive, in particular metallic, contact areas as well as at least one electrically insulating area, which is made, for example, of ceramic or plastic.

[0056] The process described below is suitable for manufacturing a semiconductor device as described above. Features described in connection with the semiconductor device can therefore also be applied to the process, and vice versa.

[0057] According to at least one embodiment of a process for manufacturing a semiconductor device of the type mentioned above, this process comprises the following steps:

[0058] - Providing a target substrate that includes at least one component of the semiconductor device,

[0059] - Providing a source substrate at a distance from the target substrate, wherein the source substrate is a support layer and 2024PF00735 27 October 2025

[0060] P2024, 0713 WO N - 12 -

[0061] The functional particles are present and adhere to the carrier layer.

[0062] - Applying at least a defined quantity of functional particles to the target substrate, wherein

[0063] The source substrate is exposed to radiation in a defined area, causing the release of functional particles, and the released functional particles are moved to the target substrate.

[0064] The radiation can, for example, cause heating and / or decomposition of the support layer. The release can occur when the radiation is absorbed and converted into heat at an interface between the support layer and a functional particle, thus reducing the adhesive force and / or at least partially decomposing the support layer.

[0065] According to at least one embodiment or design, the defined area has a position that corresponds to the position of the functional layer within the scope of usual manufacturing tolerances.

[0066] Advantageously, in this process the functional particles are released as individual particles, so that a transfer of individual functional particles and thus of a defined quantity, in particular a comparatively small quantity of functional particles or of a defined, in particular comparatively small, material volume is possible.

[0067] Several methods are conceivable for the exposure of the source substrate to radiation. For example, the radiation can be applied using an LDI-2024PF00735 (October 27, 2025).

[0068] P2024, 0713 WO N 13

[0069] Systems (LDI: Laser Direct Imaging) are available that offer high resolution, for example, a line width of 8 pm at a spacing of 12 pm, thus ensuring precise particle positioning and quantity, or a precise material volume. A more cost-effective alternative is exposure using film or hard masks, which, while offering lower positional accuracy, also provides precise particle quantity and material volume. Furthermore, if the semiconductor chip is radiation-emitting, the radiation required to release the functional particles can be generated by the chip itself. This enables self-aligned exposure, eliminating the need for an additional external radiation source. Specifically, the functional particles released through self-aligned exposure are conversion particles.

[0070] According to at least one embodiment or configuration, the radiation used to release the functional particles is UV radiation, for example UV-A or UV-B radiation, or blue light. For example, exposure doses of less than 100 mJ / cm² are sufficient to decompose the support layer. The radiation can, for example, be provided in pulsed form.

[0071] According to at least one embodiment or configuration, the source substrate comprises a support substrate, the support layer being arranged between the functional particles and the support substrate. The support substrate may be transparent, at least in certain areas, to the radiation used for illumination. 2024PF00735 October 27, 2025

[0072] P2024, 0713 WO N 14

[0073] According to at least one embodiment or configuration, the functional particles are arranged in a few layers, for example, monolayers, on the substrate. The functional particles can be applied to the substrate by means of pouring, pressing, or spraying, and optionally reduced to a desired quantity of functional particles or layers, for example, a monolayer, by means of means such as evaporation or centrifugation. Furthermore, the functional particles can exhibit the properties mentioned above in connection with the semiconductor device.

[0074] In particular, the support layer decomposes into various gases during decomposition. For this, a support layer that is as thin as possible, for example with a thickness of no more than 300 nm, is advantageous. The gases can exert a force on the released functional particles, causing them to move towards the target substrate.

[0075] According to at least one embodiment or design, the carrier layer is made of an organic material, for example, plastic. Thermoplastics or thermosets are suitable for the carrier layer. When the carrier layer decomposes, gases from inorganic compounds such as CO₂ or H₂O can be released. Adhesive acrylic or silicone layers are also possible as carrier layers.

[0076] According to at least one embodiment or configuration, the distance between the source substrate's support substrate and the target substrate is between 50 and 100 pm. 2024PF00735 October 27, 2025

[0077] P2024, 0713 WO N 15

[0078] According to at least one implementation form or design, the procedure includes:

[0079] - Providing a target substrate that includes a support element,

[0080] - Applying the defined quantity of functional particles to the carrier element,

[0081] - Arranging a semiconductor chip on the substrate in such a way that functional particles are located between the substrate and the semiconductor chip, and

[0082] - Forming an electrical contact layer between the semiconductor chip and the support element by melting functional particles located between the semiconductor chip and the support element.

[0083] The support element and the semiconductor chip each exhibit the properties mentioned above in connection with the semiconductor component.

[0084] According to at least one embodiment or configuration, the functional particles or electrically conductive particles used to form the electrical contact layer are produced by placing different material layers on a substrate and joining them, for example by melting, and forming particles from the resulting compound. The substrate can be provided with cavities on a side facing the material layers, in or on which particles of the same size, differing little or not at all in shape and / or size, can be produced.

[0085] According to at least one embodiment or configuration, a trapping agent is applied to the target substrate before the defined quantity of functional particles is applied. 2024PF00735 27 October 2025

[0086] P2024, 0713 WO N - 16 -

[0087] The defined quantity of functional particles is applied. This can then be arranged on the side of the capture agent facing away from the carrier element. Through sedimentation and, if necessary, centrifugation, the defined quantity of functional particles can be transported to a target location on the target substrate. Suitable materials for the capture agent include, for example, hydrocarbons such as rosin, succinic acid, acetic acid, polyethylene glycol (PEG), acrylates, silicones, or epoxides, and mixtures of substances.

[0088] According to at least one embodiment or configuration, the semiconductor chip is then positioned on a side of the retaining device facing away from the support element and pressed onto the defined quantity of functional particles, for example by means of a pressure plate. The pressure plate can, for instance, be a glass plate with a non-stick coating, the non-stick coating being located in an area intended for contact with the semiconductor chip.

[0089] According to at least one implementation form or design, the procedure includes:

[0090] - Providing a target substrate that includes a semiconductor chip with a conversion layer,

[0091] - Applying the defined quantity of functional particles to the conversion layer in such a way that the functional particles are partially arranged on the conversion layer and a distribution of the conversion particles extends laterally beyond the conversion layer, wherein the functional particles are conversion particles. 2024PF00735 October 27, 2025

[0092] P2024, 0713 WO N 17

[0093] For example, the target substrate is measured before the application of the defined quantity of functional particles in order to determine the position of the functional layer and thus the target location of the functional particles. Furthermore, a color point of the radiation emitted during operation can be determined before the application of conversion particles in order to achieve a targeted color point adjustment using the defined quantity of conversion particles.

[0094] The semiconductor component is particularly suitable for projection devices, display devices such as indicator boards, symbols and displays, as well as for general lighting and vehicle headlights.

[0095] They show:

[0096] Figure 1A is a schematic cross-sectional view and Figure 1B is a schematic top view of a semiconductor device according to an exemplary embodiment.

[0097] Figure 2A is a schematic cross-sectional view and Figure 2B is a schematic top view of a semiconductor device according to a further embodiment.

[0098] Figures 3A to 3H show different steps of a method according to an exemplary embodiment.

[0099] Figure 4 shows a step of a method according to a further embodiment,

[0100] Figure 5A is a schematic cross-sectional view and Figure 5B is a schematic top view of a semiconductor device according to a further embodiment, 2024PF00735 27 October 2025

[0101] P2024, 0713 WO N - 18 -

[0102] Figure 6 shows a schematic cross-sectional view of a semiconductor device according to a further embodiment.

[0103] Figures 7A to 7D show further steps of a possible embodiment of the method according to the embodiment described in connection with Figures 3A to 3H and

[0104] Figures 8 and 9 show different variants of the possible embodiment of the method described in conjunction with Figures 7A to 7D.

[0105] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may each be designated with the same reference numerals. The depicted elements and their relative sizes are not necessarily to be considered to scale; rather, individual elements may be exaggerated for clarity and / or better understanding.

[0106] Figure 1B shows a top view of a semiconductor device 1 according to an embodiment and Figure 1A shows a cross-sectional view of the semiconductor device 1 in a plane perpendicular to the plane of representation of Figure 1B.

[0107] The semiconductor device 1 comprises a semiconductor chip 2, for example an optoelectronic semiconductor chip, which may be a radiation-emitting semiconductor chip. For example, a significant portion of the radiation can be emitted from a radiation-exiting side 2A of the semiconductor chip 2 and from a top side 1A of the 2024PF00735 27 October 2025

[0108] P2024, 0713 WO N - 19 -

[0109] Semiconductor device 1 exits from semiconductor device 1.

[0110] On the radiation-emitting side 2A of the semiconductor chip 2, which is a surface located on the top side of the semiconductor chip 2, a functional layer 3 is arranged, which is a conversion layer 30. The conversion layer 30 can be, for example, a ceramic platelet made of conversion material or a plastic layer with embedded conversion particles. Furthermore, glass or crystal platelets with a layer of conversion material are also conceivable. The functional layer 3 has a height or vertical extent hl, which is determined along a vertical direction V and is between 30 and 50 pm, with deviations within the range of normal manufacturing tolerances.

[0111] Suitable materials for the conversion material include, for example, quantum dot phosphors, YAG (yttrium aluminum garnet), which may be doped with Ce and / or Gd, white phosphors, amber, green and red phosphors, cyan / mint phosphors and infrared phosphors.

[0112] The semiconductor chip 2 is arranged on a support element 5, which comprises an electrically insulating region 50, for example made of ceramic, and a first and second electrically conductive, for example metallic, connection region 51A, 51B. For example, the semiconductor chip 2 is arranged on the first connection region 51A. In this configuration, a mounting side 2B, or underside, of the semiconductor chip 2 opposite the radiation-emitting side 2A can face the support element 5. 2024PF00735 October 27, 2025

[0113] P2024, 0713 WO N - 20 -

[0114] The semiconductor chip 2 has a sequence of semiconductor layers with a first and second semiconductor region 21, 23 of different conductivities. Between the first and second semiconductor regions 21, 23 is an active zone 22 suitable for radiation generation. The first semiconductor region 21 is located on a side facing away from the support element 5, and the second semiconductor region 23 is located on a side facing the support element 5. The first semiconductor region 21 can, for example, be n-type and the second semiconductor region 23 p-type. However, it is also possible for the first semiconductor region 21 to be p-type and the second semiconductor region 23 to be n-type. As mentioned above, materials based on arsenide, phosphide, or nitride compound semiconductors are suitable for the semiconductor regions 21, 22, 23, or the semiconductor layers of the semiconductor sequence.

[0115] For example, the first terminal area 51A is electrically connected to the first semiconductor area 21. Furthermore, the second semiconductor area 23 can be electrically connected to the second terminal area 51B. However, it is also possible that the first terminal area 51A is electrically connected to the second semiconductor area 23 and the second terminal area 51B is electrically connected to the first semiconductor area 21. The electrical and, if applicable, mechanical connection to the first terminal area 51A can be realized by means of a connection layer 6, which is arranged between the mounting side 2B and the first terminal area 51A. The electrical connection to the second terminal area 51B can be realized by means of at least one electrical conductor 7 extending from a 2024PF00735 October 27, 2025

[0116] P2024, 0713 WO N - 21 -

[0117] The top contact 24 of the semiconductor chip 2 extends to the second connection area 51B. Due to the electrical connection on the top and bottom surfaces 2A, 2B, the semiconductor chip 2 has a vertical design.

[0118] For example, the semiconductor chip 2 can have a height or vertical extent h2 that is in the range of 10pm to 1000pm, with deviations possible within the limits of normal manufacturing tolerances.

[0119] The semiconductor device 1 can optionally have an ESD protection diode 8 (ESD: electrostatic discharge) which is arranged on the second terminal area 51B and is connected to the first terminal area 51A by means of an electrical conductor 7.

[0120] Furthermore, the semiconductor device 1 comprises an enclosure 9 in which the semiconductor chip 2 and the functional layer 3 are at least partially embedded. For example, a top surface 3A of the functional layer 3 is uncovered by the enclosure 9, with the enclosure 9 not projecting beyond the top surface 3A in the vertical direction V. It is also possible that the enclosure 9 does not project beyond the support element 5 in lateral directions L. The lateral directions L can run in or parallel to a principal plane of extension of the semiconductor device 1, and the vertical direction V can run transversely, in particular perpendicularly, to it. The enclosure 9 can be a body integrally formed with components 2, 3, 5, for example, and may contain plastic and be manufactured by a casting or injection molding process. 2024PF00735 October 27, 2025

[0121] P2024, 0713 WO N - 22 -

[0122] Furthermore, the semiconductor device 1 comprises a distribution of functional particles 4, which are conversion particles 40. The distribution of the functional particles 4 extends in lateral directions L from the top surface 3A of the functional layer 3 beyond it to regions of the semiconductor device 1 that do not laterally overlap with the functional layer 3. The functional particles 4 are arranged both on the top surface 3A of the functional layer 3 and on a top surface 9A of the enclosure 9, with the distribution of the functional particles 4 on the top surface 9A of the enclosure 9 surrounding the distribution of the functional particles 4 on the top surface 3A of the functional layer 3 in a frame-like manner (see Figure 1B). The functional particles 4 can be embedded in a cover layer 10, which, for example, improves their adhesion to the functional layer 3 and the enclosure 9.

[0123] At least some of the functional particles 4 are separated from each other by spaces s, so that the top surfaces 3A, 9A are only partially covered by the functional particles 4, resulting in a surface coverage of less than 100%. Furthermore, the functional particles 4 can be arranged in a monolayer. With a mean particle diameter d of at most 25 pm, as explained in more detail above, the semiconductor device 1 thus has a precisely measured quantity of functional particles 4, or a precisely measured volume of conversion material.

[0124] The functional layer 3, which is a conversion layer 30, is intended to convert at least a portion of the primary radiation generated in the active zone 22, which has a first peak wavelength or first wavelength distribution, into 2024PF00735 27 October 2025

[0125] P2024, 0713 WO N 23

[0126] To convert secondary radiation that has a second peak wavelength or second wavelength distribution, where the first and second peak wavelengths or first and second wavelength distributions differ from each other and the second peak wavelength is, for example, greater than the first peak wavelength. For example, the first peak wavelength or first wavelength distribution may be in the UV or blue spectral range and the second peak wavelength or second wavelength distribution in the yellow-green spectral range.

[0127] The functional particles 4 and the functional layer 3 can have the same physical or optical function, which consists of converting at least part of the primary radiation into secondary radiation, and can, but do not have to, contain the same conversion material. The materials mentioned above are suitable as conversion materials.

[0128] Overall, the optoelectronic semiconductor device 1 can emit white light during operation, for example.

[0129] Using the functional particles 4, it is possible to readjust a color point that results from a superposition of the primary radiation and secondary radiation of the functional layer 3.

[0130] Due to the precise distribution of the functional particles 4, the semiconductor device 1 exhibits overall improved physical properties, for example, optical properties. The precise distribution of the functional particles 4 is particularly advantageous in a micro-component. 2024PF00735 October 27, 2025

[0131] P2024, 0713 WO N - 24 -

[0132] Furthermore, the semiconductor device 1 can exhibit all the features and advantages mentioned in connection with the further embodiments.

[0133] Figure 2B shows a top view of a semiconductor device 1 according to a further embodiment and Figure 2A shows a cross-sectional view of the semiconductor device 1 in a plane perpendicular to the plane of representation of Figure 2B.

[0134] As in the preceding embodiment, the functional layer 3 is a conversion layer 30, which can exhibit the properties already described. However, the semiconductor chip 2 has a horizontal chip design, with electrical contact being made from the mounting side 2B via a first and second contact structure 25, 26, each of which is electrically connected to one of the first and second semiconductor areas 21, 23. Furthermore, the first and second contact structures 25, 26 are each connected to one of the first and second connection areas 51A, 51B of the carrier element 5 via a connection layer 6. The first and second connection areas 51A, 51B can each be lattice-like metallizations. The electrically insulating area 50 can be a carrier layer, for example, a film that contains or consists of plastic.

[0135] Furthermore, the semiconductor device 1 comprises a distribution of functional particles 4, which are conversion particles 40. The distribution of the functional particles 4 extends in lateral directions L from the top surface 3A of the functional layer 3 beyond it to areas of the 2024PF00735 27 October 2025

[0136] P2024, 0713 WO N 25

[0137] Semiconductor device 1, which do not laterally overlap with the functional layer 3. The functional particles 4 are arranged both on the top surface 3A of the functional layer 3 and on the interconnection layers 6 and the support element 5, wherein, in a top view of the semiconductor device 1, the distribution of the functional particles 4 outside the functional layer 3 surrounds the distribution of the functional particles 4 on the top surface 3A of the functional layer 3 in a frame-like manner (see Figure 2B).

[0138] As in the preceding embodiment, at least some of the functional particles 4 are separated from one another by spaces s, so that surfaces covered by the distribution are only partially covered by the functional particles 4, or the surface coverage by the distribution is less than 100%. Furthermore, the functional particles 4 can be arranged in a monolayer and have a particle diameter of at most 25 pm, so that the semiconductor device 1 according to the further embodiment also has a finely metered quantity of functional particles 4 or a finely metered volume of conversion material.

[0139] The functional particles 4 can be embedded in a protective layer 11, which, for example, contains or consists of a plastic material. The protective layer 11 improves, for example, the adhesion of the functional particles 4 to the functional layer 3 and ensures a flat surface, so that the semiconductor device 1 has a flat top surface 1A and flat side surfaces 1B.

[0140] In this embodiment as well, the physical and optical properties of the 2024PF00735 can be described. October 27, 2025

[0141] P2024, 0713 WO N - 26 -

[0142] The semiconductor device 1 is improved due to the finely dosed amount of functional particles 4.

[0143] Furthermore, the semiconductor device 1 can exhibit all the features and advantages mentioned in connection with the further embodiments.

[0144] In conjunction with Figures 3A to 3H, various embodiments of a method for manufacturing different types of semiconductor devices are explained in more detail.

[0145] As shown in Figures 3A to 30, the method comprises providing a source substrate 90 comprising a support layer 91 and functional particles 4, wherein the functional particles 4 adhere to the support layer 91. The support layer 91 is, for example, a decomposable layer that can be at least partially decomposed into various gases by radiation, such as UV radiation or blue light. Furthermore, the support layer 91 can exhibit an adhesive effect that decreases with absorbed radiation or heating. The support layer 91 is, for example, made of an organic material, in particular a plastic. Thermoplastics or thermosets are suitable for the support layer 91. Adhesive acrylic or silicone layers are also possible as the support layer 91.

[0146] Furthermore, the source substrate 90 can comprise a support substrate 92, wherein the support layer 91 is arranged between the functional particles 4 and the support substrate 92. The support substrate 92 can be transparent, at least in certain areas, to the radiation R (see Figure 3D), which is related to 2024PF00735 27 October 2025

[0147] P2024, 0713 WO N 27

[0148] The release of the functional particles 4 or heating and / or decomposition of the support layer 91 is used. The support layer 91 can be thinner than the support substrate 92 and have a small thickness, for example, no more than 300 nm, in order to be completely decomposable.

[0149] As shown in Figure 3B, the functional particles 4 can be arranged in several layers on the carrier layer 91, at least in certain areas. The functional particles 4 can be applied, for example, by pouring, pressing (see Figure 70) or spraying.

[0150] As shown in Figure 30, the number of layers or functional particles 4 can then be reduced, for example by evaporation or centrifugation, to a desired quantity of functional particles 4 or layers, for example to a monolayer or a desired material volume (see arrow).

[0151] The functional particles 4 can be, as in the preceding embodiments, conversion particles 40 or, as in the following embodiments, electrically conductive particles 41 and thus exhibit the properties mentioned in connection with the semiconductor device.

[0152] The electrically conductive particles 41 can each be formed from a homogeneous, electrically conductive material, with suitable materials being, for example, solder materials such as Sn or Sn-based compounds, for example, SnAgCu, SnBi, or In or In-based compounds such as InSn. 2024PF00735 October 27, 2025

[0153] P2024, 0713 WO N - 28 -

[0154] Furthermore, the method comprises providing a target substrate 100, which includes at least one component of the semiconductor device 1 to be manufactured. As shown in Figure 3D, the target substrate 100 can, for example, have a carrier element 5 with a first and second electrically conductive contact area 51A, 51B for the production of an electrical contact layer 31. However, it is also possible that the target substrate 100, for example, has a semiconductor chip 2 with a functional layer 3, which is a conversion layer 30, for the production of a conversion element (see Figure 4). The source substrate 90 is provided at a distance from the target substrate 100, wherein a distance a between the carrier substrate 92 and the target substrate can be between 50 and 100 pm.

[0155] The source substrate 90 is exposed to radiation R (see arrows) in a defined area B, which causes heating and / or decomposition of the support layer 91, releasing a defined quantity of functional particles 4. The heating can reduce the adhesive effect or adhesive force on the functional particles 4. During decomposition, the support layer 91 can decompose, at least partially, into various gases. The defined area B has a position that corresponds to the position of the functional layer 3 or the functional layer 3 to be produced.

[0156] A force K (see arrows) exerted on the released functional particles 4, for example by the various gases during decomposition, moves the functional particles 4 towards the target substrate 100 and transfers them to it in a defined quantity. For example, 2024PF00735 October 27, 2025

[0157] P2024, 0713 WO N 29

[0158] The radiation R is UV radiation, for example UV-A or UV-B radiation, or blue light. For example, exposure doses of less than 100 mJ / cm² are sufficient for the decomposition of the substrate 91. The radiation R can be provided, for example, in pulsed form. Furthermore, the gases produced are, for example, inorganic compounds such as CO₂ or H₂O.

[0159] As mentioned above, various systems or methods are suitable for exposure.

[0160] For example, the radiation can be provided using an LDI system (LDI: Laser Direct Imaging), which offers a comparatively high resolution and thus ensures precise particle position and quantity, or a precise material volume. Alternatively, exposure can be achieved using film or hard masks, which, although associated with lower positional accuracy, also provides a precise particle quantity or material volume and is more cost-effective.

[0161] As shown in Figure 3D, prior to the application of the defined quantity of functional particles 4, a trapping agent 80, for which, for example, hydrocarbons such as rosin, succinic acid, acetic acid, polyethylene glycol (PEG), acrylates, silicones, or epoxides and mixtures of substances are suitable, can be applied to the target substrate 100, for example by spraying, centrifuging, metering, or pressure, wherein the defined quantity of functional particles 4 is arranged on a side of the trapping agent 80 facing away from the carrier element 5. By sedimentation and, if necessary, centrifugation, the defined quantity of 2024PF00735 27 October 2025 can be separated.

[0162] P2024, 0713 WO N - 30 -

[0163] Functional particles 4 reach a target location on the target substrate 100, for example, the connection areas 51A, 51B.

[0164] As can be seen from Figure 3F, a semiconductor chip 2, which for example has a horizontal chip design with a first contact structure 25 and a second contact structure 26, is then arranged on a side of the trapping means 80 facing away from the support element 5.

[0165] As shown in Figure 3G, the semiconductor chip 2 can be pressed onto the carrier element 5, for example by means of a pressure plate 70 (see arrow), so that functional particles 4 are located between the carrier element 5 and the semiconductor chip 2, specifically between the first connection area 51A and the first contact structure 25, and between the second connection area 51B and the second contact structure 26. For example, the pressure plate 70 can be a glass plate with a non-stick coating, the non-stick coating being arranged in an area intended for contact with the semiconductor chip 2.

[0166] As shown in Figure 3H, an electrical contact layer 31 is created between the semiconductor chip 2 and the support element 5 from a portion of the functional particles 4, for example by melting functional particles 4 located between the semiconductor chip 2 and the support element 5. In this case, the functional particles 4 are electrically conductive. Subsequently, cleaning can take place, in particular to remove residues of the trapping agent 80. [2024PF00735 27 October 2025]

[0167] P2024, 0713 WO N 31

[0168] It is possible to produce the connecting layers 6 of the embodiments shown in Figures 1 and 2 in the same way, so that they are functional layers 3 or electrical contact layers 31.

[0169] A semiconductor device 1 produced by such a method is described in more detail in conjunction with Figures 5A and 5B.

[0170] Figure 4, however, shows a method suitable for producing a semiconductor device 1 according to the first and second embodiments. The method includes, in particular, the steps described in connection with Figures 3A to 3D, wherein the functional particles 4 are conversion particles 40 and the target substrate 100, as shown in Figure 4, comprises at least one semiconductor chip 2 with a functional layer 3, which is a conversion layer 30, and at least one support element 5 on which the at least one semiconductor chip 2 is arranged.

[0171] For the transfer of the functional particles 4, an exposure system or exposure method as described in connection with Figure 3D can be used.

[0172] However, it is also possible that, as shown in Figure 4, the radiation R for releasing the functional particles 4 is provided by the radiation-emitting semiconductor chip 2 itself. This enables self-administered exposure that does not require an additional, external radiation source. 2024PF00735 October 27, 2025

[0173] P2024, 0713 WO N - 32 -

[0174] Figure 5B shows a top view of a semiconductor device 1 according to a further embodiment and Figure 5A shows a cross-sectional view of the semiconductor device 1 in a plane perpendicular to the plane of representation of Figure 5B.

[0175] The semiconductor device comprises a semiconductor chip 2, which, like the semiconductor chip 2 described in conjunction with Figures 2A and 2B, has a horizontal chip design. Electrical contact of the semiconductor chip 2 is effected from the mounting side 2B by means of a first and second contact structure 25, 26, each of which is electrically connected to one of the first and second semiconductor areas 21, 23. The semiconductor chip 2 can, for example, be a radiation-emitting or detecting semiconductor chip or a switching element comprising an integrated electronic circuit.

[0176] The semiconductor chip 2 is arranged on a substrate 5, which comprises an electrically insulating region 50 and first and second connection regions 51A, 51B. The first and second connection regions 51A, 51B can each be grid-like metallizations applied to a top surface of the electrically insulating region 50 facing the semiconductor chip 2. The electrically insulating region 50 can be a substrate layer, for example a film, which contains or consists of plastic.

[0177] Between a mounting side 2B of the semiconductor chip 2 and the support element 5 is a functional layer 3, which is an electrical contact layer 31 and extends in lateral directions L beyond the semiconductor chip 2. 2024PF00735 October 27, 2025

[0178] P2024, 0713 WO N 33

[0179] Contact layer 31 is a structured layer with different contact areas 31A, 31B, which exhibit different polarities during operation. However, it is also possible, for example in a vertical chip design (see Figures 1A and 1B), that the electrical contact layer 31 is a continuous layer and exhibits a single polarity during operation.

[0180] The first and second contact structures 25, 26 are each connected to one of the first and second connection areas 51A, 51B of the support element 5 by means of one of the contact areas 31A, 31B. The method described in conjunction with Figures 3A to 3H is suitable for producing the electrical contact layer 31. While in this method the functional particles 4, 41 used to produce the contact layer 31 lose their particle shape, for example by melting, so that the contact layer 31 is essentially homogeneous, in an area of ​​the semiconductor device 1 that does not laterally overlap with the contact layer 31, there are non-melted functional particles 4, 41. The functional particles 4, 41 and the functional layer 3 can contain the same electrically conductive material. However, the physical function of an electrical contact is mainly fulfilled by the functional layer 3.

[0181] Furthermore, the semiconductor device 1 can have all the features and advantages mentioned in connection with the further embodiments, such as a protective layer 11 that ensures flatness, so that the semiconductor device 1 has a flat top surface 1A and flat side surfaces 1B. 2024PF00735 October 27, 2025

[0182] P2024, 0713 WO N - 34 -

[0183] In this embodiment as well, the physical, in particular electrical, properties of the semiconductor device 1 can be improved due to the finely dosed amount of functional particles 4.

[0184] Figure 6 shows a further embodiment of a semiconductor device 1, which, as in the preceding embodiment, comprises a semiconductor chip 2 with a horizontal chip design and a structured contact layer 31 with a first contact area 31A and a second contact area 31B.

[0185] While the electrically conductive particles 41 or functional particles 4 used in the preceding embodiment are, for example, solid bodies made of a homogeneous, electrically conductive material, the electrically conductive particles 41 or functional particles 4 used in the embodiment shown in Figure 6 can have a core 4A and a coating 4B. The core 4A can be made of an electrically conductive material such as Cu or Ni or an electrically insulating material such as plastic, for example, polystyrene. A quantum dot core is also a possible option for the core 4A.Furthermore, electrically insulating materials such as passivation materials and electrically conductive materials such as Au or Ni, and solder materials such as Sn or Sn-based compounds, for example SnAgCu, SnBi, as well as In or In-based compounds such as InSN, are suitable for coating 4B. A quantum dot shell is also a possible coating 4B. In particular, coating 4B is formed from an electrically conductive material if core 4A is formed from an electrically insulating material, and vice versa. 2024PF00735 October 27, 2025.

[0186] P2024, 0713 WO N - 35 -

[0187] For example, the coatings 4B in the contact layer 31 can be bonded together to form a homogeneous layer.

[0188] Furthermore, the semiconductor device 1 can have all the features and advantages mentioned in connection with the further embodiments, such as a protective layer 11 which provides a flattening, so that the semiconductor device 1 has a flat top surface 1A and flat side surfaces 1B.

[0189] In this embodiment as well, the physical, in particular electrical, properties of the semiconductor device 1 can be improved due to the finely dosed amount of functional particles 4.

[0190] In conjunction with Figures 7A to 7D, a possible method for the production of functional particles 4, which are electrically conductive particles 41, is described.

[0191] As shown in Figure 7A, different material layers 41A, 41B, for example metal layers, can be provided on a substrate 101, which is formed, for example, from an electrically insulating material such as SiO2 or Al₂O₃. The material layer 41A, which contains, for example, Sn, and the material layer 41B, which contains, for example, Bi, can be applied to the substrate 101, for example, by sputtering.

[0192] As shown in Figure 7B, a compound can be produced from the material layers 41A, 41B, for example by melting, from which a variety of functional particles 4, 41 are formed. For example, 2024PF00735 27 October 2025

[0193] P2024, 0713 WO N - 36 -

[0194] the functional particles 4, 41 are formed in a monolayer on the substrate 101.

[0195] As shown in Figure 7C, a part of a source substrate 90 can be provided and the substrate 101 with the functional particles 4 can be arranged or pressed onto it in such a way that the functional particles 4 adhere to the carrier layer 91.

[0196] As shown in Figure 7D, the substrate 101 is subsequently removed, thereby forming a source substrate 90.

[0197] As shown in Figure 8, the substrate 101, on which the functional particles 4 or electrically conductive particles 41 are formed, can have cavities 101A and protrusions 101B which serve as nucleation sites and lead to the particle shape without further manufacturing steps.

[0198] As shown in Figure 9, the substrate 101 can alternatively have larger cavities 101A which give shape to the functional particles 4 or electrically conductive particles 41.

[0199] By using substrates 101 as described in connection with Figures 8 and 9, it is possible to produce functional particles 4 that hardly differ or do not differ from each other in shape and / or size.

[0200] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in 2024PF00735, October 27, 2025.

[0201] P2024, 0713 WO N 37

[0202] the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or embodiments.

[0203] This patent application claims priority from German patent application 102024133190.9, the disclosure content of which is hereby incorporated by reference. 2024PF00735 October 27, 2025

[0204] P2024, 0713 WO N

[0205] 38

[0206] Reference symbol list

[0207] 1 Semiconductor device

[0208] 1A Top

[0209] 1B Side surfaces

[0210] 2 Semiconductor chips

[0211] 2A Radiation exit side

[0212] 2B Underside, mounting side

[0213] 3 functional layer

[0214] 3A Top

[0215] 4 functional particles

[0216] 4A core

[0217] 4B coating

[0218] 5 support element

[0219] 6. Compound layer

[0220] 7 electrical conductors

[0221] 8 ESD protection diode

[0222] 9 Enclosure

[0223] 9A Top

[0224] 10 Top layer

[0225] 11 Protective layer

[0226] 21 first semiconductor area

[0227] 22 active zones

[0228] 23 second semiconductor area

[0229] 24 Top contact

[0230] 25 first contact structure

[0231] 26 second contact structure

[0232] 30 Conversion layer

[0233] 31 Electrical contact layer 31A, 31B Contact area

[0234] 40 conversion particles

[0235] 41 Electrically conductive particles 2024PF00735 October 27, 2025

[0236] P2024, 0713 WO N 39

[0237] 41A, 41B Material layer

[0238] 50 electrically insulating area

[0239] 51A First electrically conductive connection area 51B Second electrically conductive connection area

[0240] 70 printing plate

[0241] 80 fishing gear

[0242] 90 source substrate

[0243] 91 Carrier layer

[0244] 92 Carrier substrate

[0245] 100 target substrate

[0246] 101 Substrat

[0247] 101A Cavity

[0248] 101B Survey

[0249] a distance

[0250] hl, h2 height

[0251] d diameter

[0252] s space

[0253] B defined area

[0254] K force

[0255] R radiation

[0256] V vertical direction

[0257] L lateral direction

Claims

2024PF00735 October 27, 2025 P2024, 0713 WO N - 40 - Patent claims 1. Semiconductor device ( 1 ) comprising - a semiconductor chip (2 ), - at least one functional layer (3) which has a physical function and is arranged on a surface (2A, 2B) of the semiconductor chip (2 ), - a distribution of functional particles (4) which have a material corresponding to the functional layer (3) and / or a physical function corresponding to the functional layer (3), wherein the distribution of the functional particles (4 ) is located at least partially in an area of ​​the semiconductor device ( 1 ) which does not laterally overlap with the functional layer (3).

2. Semiconductor device ( 1 ) according to the preceding claim, wherein the functional particles (4 ) have a mean diameter (d) of at most 25 pm.

3. Semiconductor device ( 1 ) according to one of the preceding claims, wherein the functional particles (4 ) are arranged in a monolayer.

4. Semiconductor device ( 1 ) according to one of the preceding claims, wherein at least a part of the functional particles (4 ) are separated from each other by spaces (s).

5. Semiconductor device ( 1 ) according to one of the preceding claims, wherein the at least one functional layer (3) is a conversion layer (30) arranged on a radiation exit side (2A) of the semiconductor chip (2 ). 2024PF00735 October 27, 2025 P2024, 0713 WO N - 41 - 6. Semiconductor device ( 1 ) according to the preceding claim, wherein at least a part of the functional particles (4 ) are conversion particles (40), and the conversion particles (40) are partially arranged on the conversion layer (30), wherein a distribution of the conversion particles (40) extends laterally beyond the conversion layer (30).

7. Semiconductor device ( 1 ) according to one of the preceding claims, wherein the at least one functional layer (3) is an electrical contact layer (31 ) arranged on a mounting side (2B) of the semiconductor chip (2 ).

8. Semiconductor device ( 1 ) according to the preceding claim, wherein at least part of the functional particles (4 ) are electrically conductive particles (41 ) and the electrically conductive particles (41 ) are arranged only in a region of the semiconductor device ( 1 ) which does not laterally overlap with the functional layer (3).

9. Semiconductor device ( 1 ) according to one of the two preceding claims, comprising a carrier element (5) on which the semiconductor chip (2 ) is arranged, wherein the semiconductor chip (2 ) is electrically connected to the carrier element (5) by means of the functional layer (3).

10. Semiconductor device ( 1 ) according to one of the preceding claims, wherein the semiconductor device ( 1 ) is a micro-component.

11. Method for manufacturing a semiconductor device ( 1 ) according to any one of the preceding claims, wherein the method comprises: 2024PF00735 October 27, 2025 P2024, 0713 WO N - 42 - - Providing a target substrate ( 100 ) that includes at least one component of the semiconductor device ( 1 ), - Providing a source substrate ( 90 ) at a distance from the target substrate ( 100 ), wherein the source substrate ( 90 ) has a support layer ( 91 ) and functional particles ( 4 ) and the functional particles ( 4 ) adhere to the support layer ( 91 ), - Applying at least a defined quantity of functional particles ( 4 ) to the target substrate ( 100 ), wherein the source substrate ( 90 ) is exposed to radiation (R) in a defined area (B ) which causes a release of the functional particles, and the released functional particles are moved to the target substrate.

12. Method according to the preceding claim, wherein the method comprises: - Providing a target substrate ( 100 ) which has a support element ( 5 ), - Applying the defined quantity of functional particles ( 4 ) to the carrier element ( 5 ), - Arranging a semiconductor chip ( 2 ) on the support element ( 5 ) in such a way that functional particles ( 4 ) are located between the support element ( 5 ) and the semiconductor chip ( 2 ), and - Forming an electrical contact layer ( 31 ) between the semiconductor chip ( 2 ) and the support element ( 5 ) by melting functional particles ( 4 ) located between the semiconductor chip ( 2 ) and the support element ( 5 ).

13. Method according to one of the two preceding claims, wherein the method comprises: - Providing a target substrate ( 100) that supports a semiconductor chip ( 2 ) with a conversion layer ( 30 ) exhibits 2024PF00735 October 27, 2025 P2024, 0713 WO N - 43 - - Applying the defined quantity of functional particles (4 ) to the conversion layer (30) in such a way that the functional particles (4 ) are partially arranged on the conversion layer (30) and a distribution of the conversion particles (40) extends laterally beyond the conversion layer (30), wherein the functional particles (4 ) are conversion particles (40).

14. Method according to the preceding claim, wherein the radiation (R) is provided for the release of the functional particles (4) through the semiconductor chip (2).

15. Method according to any one of claims 11 to 13, wherein the radiation (R) is provided by means of an LDI system (LDI: Laser Direct Imaging).

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