Hybrid integrated circuits and systems and methods for manufacturing same
By integrating thin-film active devices over CMOS devices, the method enhances chip density and functionality, addressing manufacturing complexity and reliance on few fabrication facilities, thus improving semiconductor production efficiency and diversity.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- ZINITE CORP
- Filing Date
- 2026-04-17
- Publication Date
- 2026-06-04
AI Technical Summary
The semiconductor industry faces challenges in achieving high-density integrated circuits with complex manufacturing processes and high costs, with planar density approaching its limits and reliance on a few critical fabrication facilities.
A hybrid approach is introduced where CMOS active devices are partially completed using conventional methods, followed by thin-film active devices and wiring formed over them, enhancing functionality without requiring changes to existing CMOS fabrication lines.
This method increases density and adds valued-added functionality to CMOS chips, diversifies the global semiconductor supply chain, and reduces reliance on specific fabrication facilities, while maintaining or reducing manufacturing complexity.
Smart Images

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