Film deposition apparatus, control method, method for manufacturing electronic device, and mask

Abstract

This film deposition apparatus for depositing a plurality of element rows on a substrate comprises: a substrate support means; a mask support means; a vapor deposition means provided with a plurality of vapor deposition sources having different vapor deposition materials; a moving means for relatively moving the substrate support means and the vapor deposition means in the row direction of the element rows; a first changing means for changing the relative position, in the row direction of the element rows, between the substrate support means and the vapor deposition means; and a second changing means for changing the relative position between the substrate support means and the mask support means. A single film deposition operation is performed by discharging the vapor deposition materials from the vapor deposition means onto a substrate while the moving means moves the substrate support means and the vapor deposition means relative to one another in the row direction. For each film deposition operation, the combination of a vapor deposition source and a film deposition region of the substrate is changed by the first changing means, and the combination of an element row and an opening row of a mask is changed by the second changing means.

Description

Film forming apparatus, control method, method for manufacturing an electronic device, and mask

[0001] The present invention relates to a technique for forming a film on a substrate, and relates to a film forming apparatus, a control method, a method for manufacturing an electronic device, and a mask.

[0002] In the manufacture of an organic EL display or the like, a vapor deposition material is formed on a substrate using a mask. Alignment between the mask and the substrate is performed as a pretreatment for film formation, and the two are overlapped (for example, Patent Document 1). The same pattern as the pattern to be formed on the substrate is formed on the mask, and a desired pattern is formed on the substrate by a single film formation process.

[0003] Japanese Unexamined Patent Application Publication No. 2024-044139

[0004] When different types of vapor deposition materials are used, such as when forming sub-pixels of each of the RGB colors, the substrate is transported to a film formation chamber for each type of vapor deposition material, and film formation processing is performed. A film formation chamber corresponding to the type of vapor deposition material is required, and the conveyance frequency of the substrate increases. There is room for improvement in terms of manufacturing efficiency.

[0005] The present invention provides a technique for efficiently performing film formation using different types of vapor deposition materials.

[0006] According to the present invention, a film deposition apparatus for depositing multiple element rows, each having multiple elements arranged in a row, onto a film deposition region of a substrate, comprising: a substrate support means for supporting the substrate; a mask support means for supporting a mask having a mask region corresponding to the film deposition region of the substrate; a deposition means comprising multiple deposition sources with different deposition materials, for releasing deposition materials onto the substrate via the mask; a moving means for moving the substrate support means and the deposition means relative to each other in the row direction of the multiple element rows; a first changing means for changing the relative position of the substrate support means and the deposition means in the row direction of the multiple element rows; and a second changing means for changing the relative position of the substrate support means and the mask support means, wherein one film deposition operation is performed by releasing the deposition material from the deposition means onto the substrate while moving the substrate support means and the deposition means relative to each other in the row direction using the moving means, the multiple deposition sources are arranged in the row direction, the mask region has an opening row used for depositing one element row in one film deposition operation, and for each film deposition operation, A film deposition apparatus is provided, characterized in that the first modification means changes the combination of one of the plurality of deposition sources and the film deposition region, and the second modification means changes the combination of one of the plurality of element rows and the aperture row.

[0007] Furthermore, according to the present invention, a control method for a film deposition apparatus that deposits multiple element rows, each having multiple elements arranged in a row, onto a film deposition region of a substrate, wherein the film deposition apparatus comprises: a substrate support means for supporting a substrate; a mask support means for supporting a mask having a mask region corresponding to the film deposition region of the substrate; a deposition means comprising a plurality of deposition sources with different deposition materials, for releasing a deposition material onto the substrate via the mask; a moving means for moving the substrate support means and the deposition means relative to each other in the row direction of the plurality of element rows; a first changing means for changing the relative position of the substrate support means and the deposition means in the row direction of the plurality of element rows; and a second changing means for changing the relative position of the substrate support means and the mask support means, wherein the plurality of deposition sources are arranged in the row direction, and the mask region has an opening row used for depositing one element row in a single film deposition operation, and the control method comprises, as the film deposition operation, a film deposition step of releasing the deposition material from the deposition means onto the substrate while moving the substrate support means and the deposition means relative to each other in the row direction using the moving means, A control method is provided, characterized in that, for each film formation operation, the first changing means changes the combination of the deposition source among the plurality of deposition sources and the film formation region, and the second changing means changes the combination of the element row among the plurality of element rows and the aperture row.

[0008] Furthermore, the present invention provides a method for manufacturing an electronic device, characterized by including a step of forming a film on a substrate using the above-mentioned film-forming apparatus.

[0009] Furthermore, according to the present invention, a mask used for forming a film on a film-forming region of a substrate, wherein the substrate has a plurality of film-forming regions in the row direction of the plurality of element rows, the mask has a plurality of mask regions corresponding to the plurality of film-forming regions in the row direction, the plurality of subpixel rows are composed of three types of pixel rows: a first pixel row having a pixel row of subpixels of a first color, a second pixel row having a pixel row of subpixels of a second color, and a third pixel row having a pixel row of subpixels of a third color, the plurality of mask regions are composed of three types of mask regions: a first mask region where a first aperture row is formed, a second mask region where a second aperture row is formed, and a third mask region where a third aperture row is formed, and when the first aperture row corresponds to the first subpixel row at a position in the row direction, the first aperture row, the second aperture row, and the third aperture row are formed such that the second aperture row corresponds to one of the second subpixel row and the third subpixel row, and the third aperture row corresponds to the other. A mask with the following characteristics is provided.

[0010] According to the present invention, it is possible to provide a technology for efficiently forming films using different types of deposition materials.

[0011] Schematic diagram of a part of the manufacturing line for electronic devices. Schematic diagram of a film deposition apparatus according to one embodiment of the present invention. Substrate and a close-up of a part thereof. Mask and a close-up of a part thereof. Diagram explaining the film deposition operation. Flowchart showing an example of the control device's processing. Flowchart showing an example of the control device's processing. Diagram explaining the operation of the film deposition apparatus in Figure 2. Diagram explaining the operation of the film deposition apparatus in Figure 2. Diagram explaining the operation of the film deposition apparatus in Figure 2. Diagram explaining the operation of the film deposition apparatus in Figure 2. Diagram explaining the operation of the film deposition apparatus in Figure 2. Diagram showing an example of the X-direction positions of the substrate and mask. Diagram showing an example of film deposition operation. Diagram showing an example of the X-direction positions of the substrate and mask. Diagram showing an example of film deposition operation. Diagram showing an example of film deposition operation. Diagram showing an example of the X-direction positions of the substrate and mask. Diagram showing an example of film deposition operation. Diagram showing an example of film deposition operation. Diagram showing an example of film deposition operation. Diagram showing an example of film deposition operation. Diagram showing an example of film deposition operation. Diagram showing an example of film deposition operation. Overall view of an organic EL display device. Diagram showing the cross-sectional structure of one pixel.

[0012] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention to the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, the same or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0013] <First Embodiment> <Manufacturing Line for Electronic Devices> Figure 1 is a schematic diagram showing part of the configuration of an electronic device manufacturing line 100 to which the film deposition apparatus of the present invention can be applied. In each figure, arrows X and Y indicate mutually orthogonal horizontal directions, and arrow Z indicates the vertical direction (direction of gravity). The manufacturing line in Figure 1 is used, for example, to manufacture light-emitting elements of an organic EL display device. The manufacturing line 100 includes a transport chamber 120 having an octagonal shape in plan view. Substrates 101 are transported into the transport chamber 120 from the transport path 110, and substrates 101 with film deposition are transported out from the transport chamber 120 to the transport path 111.

[0014] Multiple film deposition apparatuses 1 are arranged around the transport chamber 120, where film deposition processing is performed on the substrate 101. A transport chamber 130 is located adjacent to each film deposition apparatus 1. A storage chamber 140 for housing the mask 102 is arranged around the transport chamber 130, which has an octagonal shape in plan view.

[0015] A transport unit 121 for transporting substrates 101 is located in the transport chamber 120. The transport unit 121 in this embodiment is a horizontal articulated robot, and it transports the substrates 101 in a horizontal position mounted on its hand. The transport unit 121 performs an input operation to transport the substrates 101 brought in from the transport path 110 to the film deposition apparatus 1, and an output operation to transport the substrates 101 that have been film-deposited in the film deposition apparatus 1 from the film deposition chamber 1 to the transport path 111.

[0016] Each transport chamber 130 is equipped with a transport unit 131 for transporting the mask 102. The transport unit 131 in this embodiment is a horizontally articulated robot, and it transports the mask 102 in a horizontal position mounted on its hand. The transport unit 131 performs the operation of transporting the mask 102 from the storage chamber 140 to the film deposition apparatus 1, and the operation of transporting the mask 102 from the film deposition apparatus 1 to the storage chamber 140.

[0017] <Film Deposition Apparatus> Figure 2 is a schematic diagram of a film deposition apparatus 1 according to one embodiment of the present invention. The film deposition apparatus 1 is an apparatus for depositing a vapor deposition material onto a substrate 101, and uses a mask 102 to form a thin film of vapor deposition material in a predetermined pattern. The material of the substrate 101 on which film deposition is performed in the film deposition apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. In particular, in this embodiment, the substrate 101 is, for example, a glass substrate on which a TFT (Thin Film Transistor) is formed or a semiconductor wafer (silicon wafer) on which a semiconductor element is formed.

[0018] The deposition material can be an organic material or an inorganic material (metal, metal oxide, etc.). The film deposition apparatus 1 can be applied to manufacturing equipment for electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film image sensors), as well as optical components, and is particularly applicable to manufacturing equipment for organic EL panels. In this embodiment, red, green, and blue organic materials are used as the deposition materials. In the following description, an example will be given in which the film deposition apparatus 1 deposits a film on the substrate 101 by vacuum deposition, but the present invention is not limited to this, and various film deposition methods such as sputtering and CVD can be applied.

[0019] The film deposition apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown).

[0020] A deposition unit 6 is arranged in the internal space of the vacuum chamber 2. The deposition unit 6 comprises a plurality of deposition sources 60R, 60G, and 60B that discharge deposition material upward, and a housing 61 that accommodates them. The deposition sources 60R, 60G, and 60B are arranged in the X direction and each discharges a different deposition material. Deposition source 60R discharges a red organic material. Deposition source 60G discharges a green organic material. Deposition source 60B discharges a blue organic material. Openings corresponding to each deposition source 60R, 60G, and 60B are formed in the upper wall of the housing 61.

[0021] A shutter 62 is positioned above the housing 61 to restrict and release the release of the deposited material. The shutter 62 is opened and closed by an opening and closing mechanism (not shown). An anti-adhesion plate 21 is also positioned above the deposition unit 6. The anti-adhesion plate 21 prevents the deposited material from unnecessarily adhering to the following configuration located in the upper part of the internal space of the vacuum chamber 2. Marks 22 for aligning the substrate 101 are formed on the anti-adhesion plate 21.

[0022] A moving unit 8 and a repositioning unit 9 are provided in the internal space of the vacuum chamber 2. The deposition unit 6 is mounted on the repositioning unit 9, and the repositioning unit 9 is mounted on the moving unit 8.

[0023] The moving unit 8 is a mechanism that moves the substrate support unit 3 and the deposition unit 6 relative to each other in the Y direction. In this embodiment, it is a mechanism that moves the deposition unit 6. However, it may also be a mechanism that moves the substrate support unit 3.

[0024] The moving unit 8 includes a movable table 80, a pair of rails 81, a plurality of sliders 82, and a drive unit 83. The movable table 80 is a plate-shaped member on which the position change unit 9 is mounted. Each rail 81 extends in the Y direction and is spaced apart from each other in the X direction. The sliders 82 are fixed to the movable table 80 and slide along the rails 81 in the Y direction. The movable table 80 is freely movable in the Y direction.

[0025] In this embodiment, the drive unit 83 is a ball screw mechanism. The drive unit 83 is equipped with a motor 84 as a drive source. The motor 84 rotates a ball screw shaft 85 that extends in the Y direction. A connecting part 86 equipped with a ball nut that screws onto the ball screw shaft 85 is fixed to the movable table 80. When the ball screw shaft 85 is rotated, the movable table 80 moves in the Y direction.

[0026] The position change unit 9 is a mechanism that changes the relative position of the substrate support unit 3 and the deposition unit 6 in the X direction, and in this embodiment, it is a mechanism that moves the deposition unit 6. However, it may also be a mechanism that moves the substrate support unit 3.

[0027] The repositioning unit 9 includes a rail 91, a plurality of sliders 92, and a drive unit 93. The rail 91 extends in the X direction. The sliders 92 are fixed to the housing 61 of the deposition unit 6 and slide along the rail 91 in the X direction. The deposition unit 6 is movable in the X direction.

[0028] In this embodiment, the drive unit 93 is a ball screw mechanism. The drive unit 93 is equipped with a motor 94 as a drive source. The motor 94 rotates a ball screw shaft 95 that extends in the X direction. A connecting part 96 equipped with a ball nut that screws onto the ball screw shaft 95 is fixed to the housing 61 of the deposition unit 6. By rotating the ball screw shaft 95, the position of the deposition unit 6 in the X direction can be changed.

[0029] A substrate support unit 3 is provided inside the vacuum chamber 2 to support the substrate 101 in a horizontal position. In this embodiment, the substrate support unit 3 is a plate-shaped electrostatic chuck, which attracts and holds the substrate 101 to its lower surface by electrostatic force. A functional unit 4 is provided on the substrate support unit 3. The functional unit 4 includes a cooling plate 4 to which the substrate support unit 3 is fixed. The cooling plate 4 includes, for example, a water cooling mechanism, and cools the substrate 101 during film deposition via the substrate support unit 3.

[0030] The functional unit 4 also includes a magnetic plate 41. The substrate support unit 3 and the cooling plate 40 are suspended from the magnetic plate 41 via a support portion 42 so as to be displaceable in the Z direction. The magnetic plate 41 is a plate that attracts the mask 102 by magnetic force. During film formation, the substrate 101 is sandwiched between the magnetic plate 41 and the mask 102 by magnetic force, thereby improving the adhesion between the substrate 101 and the mask 102.

[0031] The film deposition apparatus 1 includes a lifting unit 19 for raising and lowering the substrate 101. The lifting unit 19 is a mechanism for raising and lowering the support shaft 19a in the Z direction, and includes, for example, an electric cylinder or an electric ball screw mechanism. A magnetic plate 41 is fixed to the lower end of the support shaft 19a, and the substrate support unit 3 is raised and lowered via the magnetic plate 41 as the support shaft 19a is raised and lowered.

[0032] The lifting unit 19 is mounted on the position adjustment unit 15 via the frame 18. The position adjustment unit 15 aligns the substrate 101 with respect to the film deposition apparatus 1 (more specifically, aligns the substrate 101 with respect to the deposition unit 6) by displacing the substrate support unit 3 in the X-Y plane. The position adjustment unit 15 can displace the substrate support unit 6 in the rotational direction (θ direction) around the X, Y, and Z axes.

[0033] The position adjustment unit 15 comprises a fixed plate 16 and a movable plate 17. The fixed plate 16 and the movable plate 17 are rectangular frame-shaped plates, and the fixed plate 16 is fixed on the upper wall portion 20 of the vacuum chamber 2. An actuator is provided between the fixed plate 16 and the movable plate 17 to displace the movable plate 17 relative to the fixed plate 16 in rotational directions around the X, Y, and Z axes.

[0034] A frame-like support structure 18 is mounted on the movable plate 17, and a lifting unit 19 is supported on the support structure 18. When the movable plate 17 is displaced, the support structure 18 and the lifting unit 19 are displaced together. This allows the substrate 101 to be displaced in the rotational directions around the X, Y, and Z axes.

[0035] The film deposition apparatus 1 includes a mask support unit 5 that supports the mask 102 during film deposition. In this embodiment, the mask support unit 5 is also used for the transfer operation of the substrate 101 between the transport unit 121 and the substrate support unit 3.

[0036] The mask support unit 5 comprises a pair of support members 50 spaced apart in the X direction. Each support member 50 is raised and lowered by a corresponding actuator 14. In this embodiment, an actuator 14 is provided for each support member 50, but a pair of support members 50 may be raised and lowered by a single actuator 14. The actuator 14 is, for example, an electric cylinder or an electric ball screw mechanism. Each support member 50 has a claw portion 51 at its lower end. The peripheral edges of the substrate 101 and the mask 102 are placed on the claw portion 51. In the example in Figure 2, the mask 102 is placed on the claw portion 51. The pair of support members 50 are raised and lowered synchronously to raise and lower the substrate 101 and the mask 102. The claw portion 51 may have a mechanism to releasely hold the mask 102.

[0037] The position change unit 10 is a mechanism that changes the relative positions of the substrate support unit 3 and the mask support unit 5 in the X and Y directions, and in this embodiment, it is a mechanism that moves the mask support unit 5. However, instead of the position change unit 10, the substrate support unit 3 may be moved by a position adjustment unit 15.

[0038] In this embodiment, the repositioning unit 10 also functions as an alignment mechanism for the mask 102 relative to the substrate 101. The repositioning unit 10 comprises a fixed plate 11 and a movable plate 12, each provided for each actuator 14. The fixed plate 11 and the movable plate 12 are rectangular frame-shaped plates, and the fixed plate 11 is fixed on the upper wall portion 20 of the vacuum chamber 2. Between the fixed plate 11 and the movable plate 12, actuators are provided that displace the movable plate 12 in the rotational direction around the X, Y, and Z axes relative to the fixed plate 11. Each actuator 14 is fixed to the movable plate 12. When the movable plate 12 is displaced, the actuator 14 and the mask support unit 5 are displaced together. This allows the mask 102 to be displaced in the rotational direction around the X, Y, and Z axes.

[0039] The upper wall portion 20 of the vacuum chamber 2 has openings through which the support shaft 19a and the support member 50 pass. These openings are sealed by a sealing member (such as a bellows) (not shown), maintaining airtightness within the vacuum chamber 2.

[0040] The measurement unit SR measures the positions of the substrate 101 and the mask 102. In this embodiment, the measurement unit SR is an imaging device (camera) that captures images. The measurement unit SR is positioned on the upper wall portion 20 and is capable of capturing images of the inside of the vacuum chamber 2. Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measurement unit SR photographs each alignment mark and mark 22 on the substrate 101 and the mask 102. The amount of positional misalignment between the position of each alignment mark and mark 22 is calculated, and the position adjustment unit 15 and the position change unit 10 can align the substrate 101 and the mask 102 with respect to mark 22.

[0041] The control device 30 controls the entire film forming apparatus 1. The control device 30 includes a processing unit 31, a storage unit 32, an input / output interface (I / O) 33, and a communication unit 34. The processing unit 31 is a processor represented by a CPU, and controls the film forming apparatus 1 by executing a program stored in the storage unit 32. The storage unit 32 is a storage device such as a ROM, a RAM, or an HDD, and stores various control information in addition to the program executed by the processing unit 31. The I / O 33 is an interface that transmits and receives signals between the processing unit 31 and various devices. The communication unit 34 is a communication device that communicates with a host device or other control devices via a communication line.

[0042] <Example of Configuration of Substrate and Mask> Figure 3 shows an example of the substrate 101 after film formation. The substrate 101 is a circular silicon wafer and has a plurality of film formation regions R. After film formation or the like, each film formation region R is cut out from the substrate 101 as one chip.

[0043] The film formation regions R are arranged in a matrix in the X-Y plane. In the present embodiment, the Y direction is the column direction of the film formation regions R, and the X direction is the row direction of the film formation regions R. Each individual film formation region R is described in the form of R(x, y). For example, the film formation region R(1, 5) refers to the film formation region located in the first column and the fifth row. Similarly, the film formation region R(7, 2) refers to the film formation region located in the seventh column and the second row. The substrate 101 of the present embodiment is designed with a plurality of film formation regions R arranged in a 7-column and 6-row configuration (note that there are no film formation regions at the four corners of the matrix in the illustrated example).

[0044] A plurality of elements px formed by a deposited substance are arranged in each film formation region R. In the case of the present embodiment, the element px is a red, green, or blue sub-pixel, and in some cases, the element px may be referred to as the sub-pixel px. The element column EL(R) is a sub-pixel column in which a plurality of red sub-pixels px are arranged in a column in the Y direction. The element column EL(G) is a sub-pixel column in which a plurality of green sub-pixels px are arranged in a column in the Y direction. The element column EL(B) is a sub-pixel column in which a plurality of blue sub-pixels px are arranged in a column in the Y direction. In each element column, the sub-pixels px are arranged at a pitch of distance P1 in the Y direction.

[0045] The element columns EL(R), EL(G), and EL(B) are repeatedly arranged in this order in the X direction. The pitch between adjacent element columns EL is P2. The adjacent element columns EL are arranged with a shift of P1 / 2 in the Y direction.

[0046] Note that the arrangement pattern of the element px is not limited to the illustrated one and can be designed as appropriate. For example, in the illustrated example, the adjacent element columns EL are arranged with a shift of (P1) / 2 in the Y direction, but an arrangement without a shift can also be adopted.

[0047] The mask 102 is made of, for example, a silicon plate (a silicon material plate). By using a silicon wafer as the mask 102, finer and more precise openings can be formed by applying semiconductor manufacturing technology. The mask 102 has a plurality of relatively thin mask regions M and a relatively thick and rigid frame portion other than that. By providing a magnetic body in the frame portion, the mask 102 and the substrate 101 can be brought into close contact during film formation by the magnetic force of the magnet plate 41. The magnetic body is a thin film of a magnetic material such as nickel (Ni).

[0048] The mask region M is formed corresponding to the film formation region R of the substrate 101. The mask region M is arranged in a matrix shape in the X - Y plane, similar to the film formation region R. The Y direction is the column direction of the mask region M, and the X direction is the row direction of the mask region M. Each mask region M is described in the form of M(x, y). For example, the mask region M(1, 5) refers to the mask region located in the first column and the fifth row.

[0049] An aperture row OL is formed in the mask region M. The aperture row OL is a row of multiple apertures (through holes) op formed in a row in the Y direction. During film deposition, the deposition material passes through the apertures op and is deposited on the substrate 101. One aperture row OL is used to deposit each subpixel px of one element row EL, and the arrangement of the apertures op defines the deposition pattern on the substrate 101. The Y-direction pitch of the apertures op in the aperture row OL is the same as the Y-direction pitch P1 of the subpixels px. Multiple aperture rows OL are repeatedly arranged in the X direction at a pitch three times the pitch P2 between element rows EL. Adjacent aperture rows OL are offset in the Y direction by (P1) / 2. The number of apertures op in an aperture row OL is at least two greater than the number of subpixels px in the element row EL. The number of aperture rows OL in one mask region M is at least two greater than 1 / 3 of the number of element rows EL in the deposition region R.

[0050] There are three types of aperture row OL patterns: patterns PT1 to PT3. When the substrate 101 and the mask 102 are aligned to their initial positions, the aperture row OL of pattern PT1 corresponds to the position of element row EL(R). In other words, it is located at the position where red subpixels px are deposited via the aperture row OL of pattern PT1. The aperture row OL of pattern PT2 corresponds to the position of element row EL(B). In other words, it is located at the position where blue subpixels px are deposited via the aperture row OL of pattern PT2. The aperture row OL of pattern PT3 corresponds to the position of element row EL(G). In other words, it is located at the position where blue subpixels px are deposited via the aperture row OL of pattern PT2.

[0051] Patterns PT1 to PT3 differ depending on the position of the mask region M. The opening rows OL of pattern PT1 are formed in the mask regions M of the 1st, 4th, and 7th rows. The opening rows OL of pattern PT2 are formed in the mask regions M of the 2nd and 5th rows. The opening rows OL of pattern PT3 are formed in the mask regions M of the 3rd and 6th rows. In this way, the opening rows OL are arranged such that adjacent mask regions M in the X direction have different element rows EL to be deposited. The relationship between these patterns PT1 to PT3 and the mask regions M is designed by the arrangement of the deposition sources 60R, 60G, and 60B in the deposition unit 6 and the deposition pattern of the deposition region R.

[0052] <Film Formation Operation> Figure 5 shows an example of film formation operation by the deposition unit 6. The deposition unit 6 is positioned in the X direction by the position change unit 9. With the substrate 101 and the mask 102 stacked on top of each other, the deposition unit 6 is moved in the Y direction by the movement unit 8. In the illustrated example, the deposition unit 6 is shown having moved from the starting position Y0, which is one end in the Y direction, to the ending position Y1, which is the other end. As the deposition unit 6 moves, it releases deposition material, thereby forming subpixels px on the substrate 101.

[0053] The arrangement of the deposition sources 60R, 60G, and 60B corresponds to the arrangement of the deposition region R in the X direction. In the illustrated example, deposition source 60R corresponds to the fourth deposition region R. Deposition source 60G corresponds to the third deposition region R. Deposition source 60B corresponds to the second deposition region R. Therefore, red subpixels px are deposited in the fourth deposition region R. Green subpixels px are deposited in the third deposition region R. Blue subpixels px are deposited in the second deposition region R.

[0054] In this embodiment, film deposition is performed during the forward journey when the deposition unit 6 moves from the starting position Y0 to the ending position Y1. However, in addition to the forward journey, film deposition may also be performed during the return journey when the deposition unit 6 returns from the ending position Y1 to the starting position Y0.

[0055] <Control Example> An example of control of the film deposition apparatus 1 executed by the processing unit 31 of the control device 30 will be described. Figures 6 and 7 are flowcharts showing an example of processing executed by the processing unit 31, and Figures 8 to 13 are diagrams illustrating its operation. Here, an example is shown from loading the substrate 101 to film deposition and unloading it.

[0056] In S1 of Figure 6, control is executed to load the substrate 101 into the film deposition apparatus 1. State ST81 in Figure 8 shows the state in which the substrate 101 has been loaded into the vacuum chamber 2. The substrate 101 is transported below the substrate support unit 3 by the transport robot 121.

[0057] In S2 of Figure 6, control is executed to support the transported substrate 101 on the substrate support unit 3. As shown in state ST82 of Figure 8, the mask support unit 5 transfers the substrate 101 from the transport robot 121 to the substrate support unit 3. By raising the support member 50, the periphery of the substrate 101 is placed on the claw portion 51, the substrate 101 rises from the transport robot 121 and is pressed against the substrate suction surface of the substrate support unit 3. The electrostatic chuck of the substrate support unit 3 is activated to attract and hold the substrate 101.

[0058] In S3 of Figure 6, control is executed to transport and support the mask 102 into the film deposition apparatus 1. State ST91 in Figure 9 shows the state in which the mask 102 has been transported into the vacuum chamber 2. The mask 102 is transported from the storage room 140 into the vacuum chamber 2 by the transport robot 131. The mask 102 is located directly below the substrate 101. Next, the mask 102 is transferred from the transport robot 131 to the mask support unit 5 and positioned at the alignment position. State ST92 in Figure 9 shows this operation. By raising the support member 50, the periphery of the mask 102 is placed on the claw portion 51, and the mask 102 rises from the transport robot 131. The mask 102 is now supported by the support member 50, and by rising further, it is positioned at the alignment position. At the alignment position, the substrate 101 and the mask 102 are slightly separated in the Z direction.

[0059] In S4 of Figure 6, an alignment operation is performed to position the substrate 101 and mask 102 in their initial positions. As shown in state ST101 of Figure 10, the measurement unit SR measures the relative positions of the alignment marks on the substrate 101 and the mask 102 with respect to the mark 22. If the measurement result (amount of misalignment) is within the acceptable range, the alignment operation is terminated. If the measurement result is outside the acceptable range, a control amount (displacement amount of the substrate 101 and mask 102) is set based on the measurement result to bring the amount of misalignment within the acceptable range.

[0060] "Positional displacement" is defined by the distance and direction (X, Y, θ) of the positional displacement. Based on the set control amount, the position adjustment unit 15 and the position change unit 10 are activated as shown in state ST102 of Figure 10. As a result, the substrate support unit 3 and the mask support unit 5 are displaced on the X-Y plane, and the positions of the substrate 101 and mask 102 with respect to the mark 22 are adjusted. After the position adjustment, the measurement unit SR is measured again. If the measurement result is outside the acceptable range, the positions of the substrate 101 and mask 102 are adjusted again. Thereafter, measurement and position adjustment are repeated until the measurement result is within the acceptable range.

[0061] In S5 of Figure 6, control is performed to superimpose the substrate 101 onto the mask 102. State ST111 in Figure 11 shows this operation. When the substrate support unit 3 is lowered by the lifting unit 19, the substrate 101 is placed on the mask 102, and the entire surface of the substrate 101 to be processed comes into contact with the mask 102. The magnetic plate 41 comes into contact with the cooling plate 4, and the magnetic plate 41, cooling plate 4, substrate support unit 3, substrate 101 and mask 102 come into close contact from top to bottom. The magnetic force of the magnetic plate 41 pulls the mask 102 towards it, allowing the mask 102 and substrate 101 to come into close contact.

[0062] In step S6 of Figure 6, control of the film deposition process is performed. Details will be described later. During the film deposition process, the substrate 101 is maintained in its initial position. Once the film deposition process is complete, in step S7 of Figure 6, control is performed to remove the mask 102 and the substrate 101 from the film deposition apparatus 1. The removal operation of the mask 102 and the substrate 101 is generally the reverse of the loading operation. With this, film deposition on one substrate 101 is completed.

[0063] <Film Formation Process> The film formation process in S6 of Figure 6 will be explained with reference to Figures 7 and 11 to 23. In S11 of Figure 7, control is performed regarding the position setting. In this embodiment, the film formation position of the subpixel px on the substrate 101 and the type of deposition material are controlled by the relative position of the mask 102 on the substrate 101 and the relative position of the deposition unit 6 on the substrate 101. Due to the alignment in S4 of Figure 6, the substrate 101 and the mask 102 are in their initial positions, so in the position setting of S11, control is performed regarding the position of the deposition unit 6. First, the positional relationship between the substrate 101 and the mask 102 at the initial position will be explained.

[0064] In the initial position, the positional relationship between the deposition position of the subpixel px relative to the deposition region R and the aperture op of the mask region M is as shown in Figure 14. Figure 14 is a diagram showing the positional relationship between the deposition position px' of the subpixel px relative to the deposition region R and the aperture op of the mask region M. During deposition, the substrate 101 and the mask 102 are superimposed, but for the sake of explanation, they are shown separated in the Y direction in Figure 14.

[0065] In the example in Figure 14, the deposition position of the subpixel px relative to the deposition region R is indicated by position px'. This position px' is the same as the position of the deposited subpixel px as illustrated in Figure 3. The deposition regions M of the 1st, 4th, and 7th rows are superimposed by the mask regions M of the 1st, 4th, and 7th rows, which have the aperture row OL of pattern PT1. The aperture row OL is located at the position of element row EL(R), and the deposition position px' of the red subpixel coincides with the aperture op. The deposition regions M of the 2nd and 5th rows are superimposed by the mask regions M of the 2nd and 5th rows, which have the aperture row OL of pattern PT2. The aperture row OL is located at the position of element row EL(B), and the deposition position px' of the blue subpixel coincides with the aperture op. The deposition regions M of the 3rd and 6th rows are superimposed by the mask regions M of the 3rd and 6th rows, which have the aperture row OL of pattern PT3. The aperture row OL is located at the position of the element row EL(G), and the aperture op overlaps with the deposition position px' of the green subpixel. The above describes the positional relationship between the deposition position px' of the subpixel px and the aperture op in the mask region M at the initial position.

[0066] Next, the states ST111 in Figure 11 and ST151 in Figure 15 show the configuration in which the deposition unit 6 is set to the position for the initial film deposition operation by the position setting S11 in Figure 7. The deposition unit 6 is moved by the position change unit 9 to a position in which the deposition source 60R corresponds to the first row of film deposition area R.

[0067] In S12 of Figure 7, the film deposition operation is controlled. State ST112 in Figure 11 and state ST152 in Figure 15 show the configuration of the initial film deposition operation. As explained in Figure 5, during the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, the deposition material is released from the deposition source 60R. Red subpixels px are deposited on each element row EL(R) of the first film deposition region R via the mask 102. More specifically, the deposition material from the deposition source 60R reaches the substrate 101 via the opening op of the first mask region M, and red subpixels px are deposited on each element row EL(R) of the first film deposition region R. In state ST152 of Figure 15, the letter "R" shown in the first film deposition region R indicates that the deposition of red subpixels px has been completed.

[0068] In S13 of Figure 7, it is determined whether the entire film deposition process is complete. If it is not complete, the process proceeds to S14. In S14 of Figure 7, the position change unit 10 controls the relative position of the substrate 101 and the mask 102. State ST121 in Figure 12 shows the operation at this time.

[0069] First, the lifting unit 19 raises the substrate support unit 3. This separates the substrate 101 from the mask 102, causing the substrate 101 and the mask 102 to move apart in the Z direction. Next, the position changing unit 10 changes the position of the mask support unit 5. This changes the combination of the element row EL and the aperture row OL. In preparation for the second film deposition operation, the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction. This changes the positional relationship between the deposition position px' of the subpixel px and the aperture op of the mask region M. After the positional relationship is changed, the lifting unit 19 lowers the substrate support unit 3 again, bringing the substrate 101 and the mask 102 into close contact.

[0070] Figure 16 shows the changes made in preparation for the second film deposition operation. Similar to the first film deposition operation, the film deposition regions M of the first, fourth, and seventh rows are superimposed with the mask regions M of the first, fourth, and seventh rows, which have the aperture row OL of pattern PT1. However, the aperture row OL is located at the position of element row EL(G), and the deposition position px' of the green subpixels coincides with the aperture op. Similarly, the film deposition regions M of the second and fifth rows are superimposed with the mask regions M of the second and fifth rows, which have the aperture row OL of pattern PT2, but the aperture row OL has been displaced to the position of element row EL(R), and the deposition position px' of the red subpixels coincides with the aperture op. The deposition regions M of the third and sixth columns overlap with the mask regions M of the third and sixth columns, which have the aperture row OL of pattern PT3. However, the aperture row OL is located at the position of the element row EL(B), and the deposition position px' of the blue subpixels overlaps with the aperture op. In this way, the combination of element row EL and aperture row OL is changed.

[0071] Furthermore, when changing the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M, the position change unit 10 may be controlled after measuring the relative position between the alignment mark of the mask 102 and the mark 22 or the alignment mark of the substrate 101 using the measurement unit SR.

[0072] In step S15 of Figure 7, the position change unit 9 controls the position of the deposition unit 6. This changes the combination of deposition sources 60R, 60G, and 60B and the film deposition area R. Steps ST121 in Figure 12 and ST171 in Figure 17 show the position changes in preparation for the second film deposition operation. The position change unit 9 moves the deposition unit 6 so that deposition source 60R is in the second film deposition area R and deposition source 60G is in the first film deposition area R. After the process in step S15 of Figure 7 is completed, the process returns to step S12 and the film deposition operation is performed.

[0073] State ST122 in Figure 12 and State ST172 in Figure 17 show the configuration of the second film deposition operation. During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R and 60G. Green subpixels px are deposited on each element row EL(G) of the first deposition region R via the mask 102, and red subpixels px are deposited on each element row EL(R) of the second deposition region R. More specifically, the deposition material from the deposition source 60G reaches the substrate 101 via the opening op of the first mask region M, and green subpixels px are deposited on each element row EL(G) of the first deposition region R. Also, the deposition material from the deposition source 60R reaches the substrate 101 via the opening op of the second mask region M, and red subpixels px are deposited on each element row EL(R) of the first deposition region R. In state ST172 shown in Figure 17, the letter "R" in the second row of deposition region R indicates that the deposition of the red subpixel px has been completed, and the letter "G" in the first row of deposition region R indicates that the deposition of the green subpixel px has been completed.

[0074] The same process is repeated thereafter, and the film deposition process progresses.

[0075] The processes S14 and S15 in Figure 7 during the third film deposition operation will now be explained. State ST131 in Figure 13 shows the operation of S14 in Figure 7 during the preparation for the third film deposition operation. Figure 18 shows how the positional relationship between the deposition position px' of the subpixel px and the aperture op of the mask region M is changed during the preparation for the third film deposition operation.

[0076] In preparation for the third film deposition operation, as in the preparation for the second operation, the substrate 101 is raised by the lifting unit 19 to separate the substrate 101 from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction. The film deposition regions M of the first, fourth, and seventh rows overlap with the mask regions M of the first, fourth, and seventh rows, which have the aperture row OL of pattern PT1. The aperture row OL is located at the position of element row EL(B), and the aperture op overlaps with the film deposition position px' of the blue sub-pixel. Similarly, the film deposition regions M of the second and fifth rows overlap with the mask regions M of the second and fifth rows, which have the aperture row OL of pattern PT2. The aperture row OL has been displaced to the position of element row EL(G), and the aperture op overlaps with the film deposition position px' of the green sub-pixel. The deposition regions M of the third and sixth columns overlap with the mask regions M of the third and sixth columns, which have the aperture row OL of pattern PT3. The aperture row OL is located at the position of element row EL(R), and the deposition position px' of the red subpixels overlaps with the aperture op.

[0077] State ST131 in Figure 13 and State ST191 in Figure 19 show the configuration of the changes in the position of the deposition unit 6 in preparation for the third film deposition operation. The deposition unit 6 is moved by the position change unit 9 so that the deposition source 60R is in the third film deposition area R, the deposition source 60G is in the second film deposition area R, and the deposition source 60B is in the third film deposition area R. After that, the film deposition operation is performed.

[0078] State ST132 in Figure 13 and State ST172 in Figure 17 show the configuration of the third film deposition operation. During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the first deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the second deposition region R, and red subpixels px are deposited on each element row EL(R) of the third deposition region R. More specifically, the deposition material from the deposition source 60B reaches the substrate 101 via the opening op of the first mask region M, and blue subpixels px are deposited on each element row EL(B) of the first deposition region R. Furthermore, the deposited material from the deposition source 60G reaches the substrate 101 through the opening op of the second row mask region M, and green subpixels px are deposited on each element row EL(G) of the second row film deposition region R. Also, the deposited material from the deposition source 60R reaches the substrate 101 through the opening op of the third row mask region M, and red subpixels px are deposited on each element row EL(R) of the first row film deposition region R. In state ST192 in Figure 19, the letter "R" shown in the third row film deposition region R indicates that the deposition of red subpixels px is complete, the letter "G" shown in the second row film deposition region R indicates that the deposition of green subpixels px is complete, and the letter "B" shown in the first row film deposition region R indicates that the deposition of blue subpixels px is complete. Film deposition is complete in the first row film deposition region R.

[0079] The processes in S14 and S15 of Figure 7 during the fourth film deposition operation will now be explained. In S14 of Figure 7, which is the preparation for the fourth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is returned to the positional relationship shown in Figure 14. That is, the substrate 101 is raised by the lifting unit 19 to separate the substrate 101 from the mask 102, and then the mask support unit 5 is moved back in the other direction in the X direction by twice the pitch P2, and then moved back in the other direction in the Y direction by the pitch P1.

[0080] State ST201 in Figure 20 shows the configuration of the vapor deposition unit 6's position change in preparation for the fourth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the fourth film deposition area R, the vapor deposition source 60G is in the third film deposition area R, and the vapor deposition source 60B is in the second film deposition area R. After that, the film deposition operation is performed.

[0081] State ST202 in Figure 20 shows the configuration of the fourth film deposition operation. As the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the second deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the third deposition region R, and red subpixels px are deposited on each element row EL(R) of the fourth deposition region R.

[0082] In state ST202 shown in Figure 20, the letter "R" in the fourth deposition region R indicates that the deposition of red subpixels px has been completed, the letter "G" in the third deposition region R indicates that the deposition of green subpixels px has been completed, and the letter "B" in the second deposition region R indicates that the deposition of blue subpixels px has been completed. The deposition of the second deposition region R is complete.

[0083] The fifth film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the fifth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 16. That is, the lifting unit 19 raises the substrate 101 to separate it from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction.

[0084] State ST211 in Figure 21 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the fifth film deposition operation, and the configuration of the fifth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the fifth film deposition area R, the vapor deposition source 60G is in the fourth film deposition area R, and the vapor deposition source 60B is in the third film deposition area R. After that, the film deposition operation is performed.

[0085] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the third deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the fourth deposition region R, and red subpixels px are deposited on each element row EL(R) of the fifth deposition region R. Deposition is completed in the third deposition region R.

[0086] The sixth film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the sixth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 18. That is, the lifting unit 19 raises the substrate 101 to separate it from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction.

[0087] State ST212 in Figure 21 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the sixth film deposition operation, and the configuration of the sixth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the sixth film deposition area R, the vapor deposition source 60G is in the fifth film deposition area R, and the vapor deposition source 60B is in the fourth film deposition area R. After that, the film deposition operation is performed.

[0088] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the fourth deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the fifth deposition region R, and red subpixels px are deposited on each element row EL(R) of the sixth deposition region R. Deposition is completed in the fourth deposition region R.

[0089] The seventh film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the seventh film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is returned to the positional relationship shown in Figure 14. That is, the substrate 101 is raised by the lifting unit 19 to separate the substrate 101 from the mask 102, and then the mask support unit 5 is moved back in the other direction in the X direction by twice the pitch P2, and then back in the other direction in the Y direction by the pitch P1.

[0090] State ST221 in Figure 22 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the seventh film deposition operation, and the configuration of the seventh film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is in the seventh film deposition region R, the vapor deposition source 60G is in the sixth film deposition region R, and the vapor deposition source 60B is in the fifth film deposition region R. After that, the film deposition operation is performed.

[0091] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60R, 60G, and 60B. Blue subpixels px are deposited on each element row EL(B) of the fifth deposition region R via the mask 102, green subpixels px are deposited on each element row EL(G) of the sixth deposition region R, and red subpixels px are deposited on each element row EL(R) of the seventh deposition region R. Deposition is completed in the fifth deposition region R.

[0092] The eighth film deposition operation will now be explained. In S14 of Figure 7, during the preparation for the eighth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 16. That is, the lifting unit 19 raises the substrate 101 to separate it from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction.

[0093] State ST222 in Figure 22 shows the configuration of the vapor deposition unit 6's position change (S15 in Figure 7) in preparation for the eighth film deposition operation, and the configuration of the eighth film deposition operation. The vapor deposition unit 6 is moved by the position change unit 9 so that the vapor deposition source 60R is outside the film deposition area, the vapor deposition source 60G is in the seventh film deposition area R, and the vapor deposition source 60B is in the sixth film deposition area R. After that, the film deposition operation is performed.

[0094] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, deposition material is released from the deposition sources 60G and 60B. Blue subpixels px are deposited on each element row EL(B) of the sixth deposition region R via the mask 102, and green subpixels px are deposited on each element row EL(G) of the seventh deposition region R. Deposition is completed in the sixth deposition region R.

[0095] The ninth film deposition operation (final film deposition operation) will now be explained. In S14 of Figure 7, during the preparation for the ninth film deposition operation, the positional relationship between the deposition position px' of the sub-pixel px and the aperture op of the mask region M is controlled to the positional relationship shown in Figure 18. That is, the lifting unit 19 raises the substrate 101 to separate it from the mask 102, and then the mask support unit 5 is moved by a pitch P2 in one direction in the X direction and by (P1) / 2 in one direction in the Y direction.

[0096] State ST231 in Figure 23 shows the configuration of the change in the position of the deposition unit 6 in preparation for the ninth film deposition operation (S15 in Figure 7) and the configuration of the ninth film deposition operation. The deposition unit 6 is moved by the position change unit 9 so that the deposition sources 60R and 60G are outside the film deposition area, and the deposition source 60B is moved to the corresponding position in the seventh film deposition area R. After that, the film deposition operation is performed.

[0097] During the process in which the deposition unit 6 moves from the initial position Y0 to the final position Y1 by the moving unit 8, the deposition material is released from the deposition source 60B. Blue subpixels px are deposited on each element row EL(B) of the seventh deposition region R via the mask 102. Deposition of all deposition regions R is completed.

[0098] As described above, according to this embodiment, three sub-pixels px of different colors can be deposited in a single film deposition apparatus 1. Therefore, film deposition using different types of deposition materials can be performed efficiently.

[0099] <Second Embodiment> In the first embodiment, the film deposition operation was performed during the forward movement of the deposition unit 6, but separate film deposition operations may be performed on the forward and return journeys. That is, the position of the mask 102 and the position of the deposition unit 6 may be changed not only at the initial position Y0 but also at the end position Y1. This makes it possible to halve the number of movements of the deposition unit 6.

[0100] In the first embodiment, an example was shown in which the present invention was applied to the deposition of three sub-pixels px, but other deposition materials may be used as the deposition material for element px. There may also be two types of deposition materials.

[0101] In the first embodiment, the position of the mask 102 was changed in both the X and Y directions by the position change unit 10 at S14 in Figure 7. However, if the adjacent element row EL is not shifted in the Y direction, only the position change in the X direction is necessary.

[0102] <Third Embodiment> Next, an example of a method for manufacturing an electronic device will be described. The configuration and manufacturing method of an organic EL display device will be illustrated below as an example of an electronic device.

[0103] First, let me explain the organic EL display device that we manufacture. Figure 24A is an overall view of the organic EL display device 50, and Figure 24B is a diagram showing the cross-sectional structure of one pixel.

[0104] As shown in Figure 24A, the display area 151 of the organic EL display device 150 has multiple pixels 152, each having multiple light-emitting elements, arranged in a matrix. As will be explained in detail later, each light-emitting element has a structure comprising an organic layer sandwiched between a pair of electrodes.

[0105] In this context, a pixel refers to the smallest unit that enables the display of a desired color in the display area 151. In the case of a color organic EL display device, a pixel 152 is composed of a combination of multiple pixels (called sub-pixels to distinguish them from the overall pixel) of a first light-emitting element 152R, a second light-emitting element 152G, and a third light-emitting element 152B, which emit different amounts of light from each other. A pixel 152 is often composed of a combination of three types of sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. A pixel 152 may include at least one type of sub-pixel, preferably two or more types, and more preferably three or more types. For example, the sub-pixels constituting a pixel 52 may be a combination of four types of sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0106] Figure 24(B) is a schematic partial cross-sectional view along line A-B in Figure 24A. Pixel 152 has multiple subpixels on a substrate 153, each composed of an organic EL element comprising a first electrode (anode) 154, a hole transport layer 155, one of a red layer 156R, a green layer 156G, or a blue layer 156B, an electron transport layer 157, and a second electrode (cathode) 158. Of these, the hole transport layer 155, red layer 156R, green layer 156G, blue layer 156B, and electron transport layer 157 are organic layers. The red layer 156R, green layer 156G, and blue layer 156B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) that emit red, green, and blue light, respectively.

[0107] Furthermore, the first electrode 154 is formed separately for each light-emitting element. The hole transport layer 155, the electron transport layer 157, and the second electrode 158 may be formed in common across multiple light-emitting elements 152R, 152G, and 152B, or they may be formed for each light-emitting element. That is, as shown in Figure 24(B), the hole transport layer 155 may be formed as a common layer across multiple sub-pixel regions, on which the red layer 156R, green layer 156G, and blue layer 156B may be formed separately for each sub-pixel region, and on top of that, the electron transport layer 157 and the second electrode 158 may be formed as a common layer across multiple sub-pixel regions.

[0108] Furthermore, an insulating layer 159 is provided between the first electrodes 154 to prevent short circuits between the adjacent first electrodes 154. In addition, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 160 is provided to protect the organic EL element from moisture and oxygen.

[0109] In Figure 24(B), the hole transport layer 155 and the electron transport layer 157 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers having hole blocking layers and electron blocking layers. Also, a hole injection layer having an energy band structure that allows for smooth injection of holes from the first electrode 154 to the hole transport layer 155 may be formed between the first electrode 154 and the hole transport layer 155. Similarly, an electron injection layer may be formed between the second electrode 158 and the electron transport layer 157.

[0110] Each of the red layer 156R, green layer 156G, and blue layer 156B may be formed as a single light-emitting layer or by stacking multiple layers. For example, the red layer 156R may consist of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole transport layer or an electron blocking layer. Alternatively, the lower layer may be a red light-emitting layer and the upper layer being an electron transport layer or a hole blocking layer. By providing layers below or above the light-emitting layer in this way, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0111] Although an example of the red layer 156R is shown here, a similar structure may be used for the green layer 156G or the blue layer 156B. Furthermore, the number of layers may be two or more. Additionally, layers of different materials, such as an emissive layer and an electronic block layer, may be laminated, or layers of the same material may be laminated, for example, two or more emissive layers.

[0112] Next, we will specifically describe an example of a method for manufacturing an organic EL display device. Here, we assume a plurality of deposition chambers, including a deposition chamber where the deposition apparatus 1 is located.

[0113] First, a circuit (not shown) for driving the organic EL display device and a substrate 153 on which the first electrode 154 is formed are prepared. The material of the substrate 153 is not particularly limited and can be made of glass, plastic, metal, etc. In this embodiment, a substrate 153 is used in which a polyimide film is laminated on a glass substrate.

[0114] A resin layer, such as acrylic or polyimide, is coated onto the substrate 153 on which the first electrode 154 is formed by bar coating or spin coating. The resin layer is then patterned by lithography to form an insulating layer 159 in the area where the first electrode 154 is formed. This opening corresponds to the light-emitting region where the light-emitting element actually emits light. In this embodiment, the processing is performed on a large substrate until the insulating layer 159 is formed, and after the insulating layer 159 is formed, a division process is performed to divide the substrate 153.

[0115] A substrate 153 with an insulating layer 159 patterned on it is brought into the first deposition chamber, and a hole transport layer 155 is deposited as a common layer on the first electrode 154 of the display area. The hole transport layer 155 is deposited using a mask in which an opening is formed for each display area 151 that will ultimately become the panel portion of each organic EL display device.

[0116] Next, the substrate 153, on which the hole transport layer 155 has been formed, is brought into a second deposition chamber equipped with a deposition apparatus 1. A red layer 156R, a green layer 156G, and a blue layer 156B are deposited on the portion of the substrate 153 above the hole transport layer 155 where the red-emitting elements are placed (the region where the red subpixels are formed). After the deposition of the red layer 156R, green layer 156G, and blue layer 156B is completed, an electron transport layer 157 is deposited over the entire display area 151 in a third deposition chamber. The electron transport layer 157 is formed as a common layer for the three color layers 156R, 156G, and 156B.

[0117] The substrate with the electron transport layer 57 formed on it is moved to the fourth deposition chamber, where the second electrode 158 is deposited. In this embodiment, each layer is deposited by vacuum deposition in the first to fourth deposition chambers. However, the present invention is not limited thereto, and for example, the second electrode 158 may be deposited by sputtering. After that, the substrate with the second electrode 158 formed on it is moved to a sealing device, where a protective layer 60 is deposited by plasma CVD (sealing step), and the organic EL display device 150 is completed. Here, the protective layer 160 is formed by the CVD method, but the invention is not limited thereto, and may be formed by the ALD method or the inkjet method.

[0118] <Other Embodiments> The present invention can also be realized by supplying a program that implements one or more of the functions of the above-described embodiments to a system or device via a network or storage medium, and by having one or more processors in the computer of that system or device read and execute the program. It can also be realized by a circuit (for example, an ASIC) that implements one or more functions.

[0119] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention.

[0120] 1. Film deposition apparatus, 3. Substrate support unit, 5. Mask support unit, 6. Evaporation unit, 8. Moving unit, 9. Position change unit, 10. Position change unit, 101. Substrate, 102. Mask

Claims

1. A film deposition apparatus for depositing multiple element rows, each having multiple elements arranged in a row, onto a film deposition region of a substrate, comprising: a substrate support means for supporting the substrate; a mask support means for supporting a mask having a mask region corresponding to the film deposition region of the substrate; a deposition means comprising multiple deposition sources with different deposition materials, for releasing deposition materials onto the substrate via the mask; a moving means for moving the substrate support means and the deposition means relative to each other in the row direction of the multiple element rows; a first changing means for changing the relative position of the substrate support means and the deposition means in the row direction of the multiple element rows; and a second changing means for changing the relative position of the substrate support means and the mask support means, wherein one film deposition operation is performed by releasing the deposition material from the deposition means onto the substrate while moving the substrate support means and the deposition means relative to each other in the row direction using the moving means; the multiple deposition sources are arranged in the row direction; the mask region has an opening row used for depositing one element row in one film deposition operation; and for each film deposition operation, A film deposition apparatus characterized by changing the combination of a deposition source among the plurality of deposition sources and the film deposition region by the first modification means, and changing the combination of an element row among the plurality of element rows and the aperture row by the second modification means.

2. A film deposition apparatus according to claim 1, wherein the substrate has a plurality of film deposition regions in the row direction, the mask has a plurality of mask regions corresponding to the plurality of film deposition regions in the row direction, the opening rows are arranged such that adjacent mask regions in the row direction have different element rows to be deposited on each other, and the film deposition operation includes a film deposition operation in which a deposition material is released from different deposition sources to a plurality of adjacent film deposition regions in the row direction.

3. A film deposition apparatus according to claim 1, wherein the elements form subpixels, the plurality of element rows are composed of three types of element rows: a first element row, a second element row, and a third element row, the first element row is an element row of subpixels of a first color, the second element row is an element row of subpixels of a second color, and the third element row is an element row of subpixels of a third color.

4. A film deposition apparatus according to claim 3, wherein the substrate has a plurality of film deposition regions in the row direction, the mask has a plurality of mask regions corresponding to the plurality of film deposition regions in the row direction, the plurality of mask regions are composed of three types of mask regions: a first mask region in which a first row of apertures is formed as the row of apertures, a second mask region in which a second row of apertures is formed as the row of apertures, and a third mask region in which a third row of apertures is formed as the row of apertures, and when the first row of apertures corresponds to the first row of elements in the row direction, the second row of apertures corresponds to one of the second row of elements and the third row of elements, and the third row of apertures corresponds to the other.

5. A film-forming apparatus according to claim 4, wherein the plurality of deposition sources comprises a first deposition source that releases a deposition material for forming subpixels of the first color, a second deposition source that releases a deposition material for forming subpixels of the second color, and a third deposition source that releases a deposition material for forming subpixels of the third color, the first changing means changes the relative position of the substrate support means and the deposition means in the row direction by moving the deposition means in one direction in the row direction, and for one film-forming region, the deposition material is released by the first deposition source, the deposition material is released by the second deposition source, and the deposition material is released by the second deposition source in three film-forming operations.

6. A film deposition apparatus according to claim 5, wherein the first element row and the second element row, and the second element row and the third element row are spaced apart by a first pitch in the row direction, and the second changing means performs a first combination changing operation, after the first and second film deposition operations of the three film deposition operations, by moving the mask support means relative to the substrate support means by the first pitch in one direction in the row direction.

7. A film deposition apparatus according to claim 6, wherein the second changing means performs a second combination changing operation, after the third film deposition operation of the three film deposition operations, by moving the mask support means relative to the substrate support means by a distance of twice the first pitch in the other direction of the row direction.

8. A film deposition apparatus according to claim 6, wherein the first element row, the second element row, and the third element row each have the plurality of elements arranged at a second pitch in the row direction, the second element row is offset from the first element row by a distance of half the second pitch in one direction in the row direction, the third element row is offset from the second element row by a distance of half the second pitch in the other direction in the row direction, and the first combination changing operation includes an operation to move the mask support means with respect to the substrate support means by a distance of half the second pitch in one direction in the row direction.

9. A method for controlling a film deposition apparatus for depositing multiple element rows, each having multiple elements arranged in a row, onto a film deposition region of a substrate, wherein the film deposition apparatus comprises: a substrate support means for supporting a substrate; a mask support means for supporting a mask having a mask region corresponding to the film deposition region of the substrate; a deposition means comprising a plurality of deposition sources with different deposition materials, for releasing deposition materials onto the substrate via the mask; a moving means for relatively moving the substrate support means and the deposition means in the row direction of the plurality of element rows; a first changing means for changing the relative position of the substrate support means and the deposition means in the row direction of the plurality of element rows; and a second changing means for changing the relative position of the substrate support means and the mask support means, wherein the plurality of deposition sources are arranged in the row direction, and the mask region has an opening row used for depositing one element row in a single film deposition operation, and the control method comprises, as the film deposition operation, a film deposition step of releasing the deposition material from the deposition means onto the substrate while relatively moving the substrate support means and the deposition means in the row direction using the moving means; A control method characterized by including a modification step in which, for each film formation operation, the first modification means modifies the combination of the deposition source among the plurality of deposition sources and the film formation region, and the second modification means modifies the combination of the element row among the plurality of element rows and the aperture row.

10. A method for manufacturing an electronic device, characterized by comprising the step of forming a film on a substrate using the film-forming apparatus described in claim 1.

11. A mask used for forming a film on a film-forming region of a substrate, wherein a plurality of subpixel rows, each having a plurality of subpixels arranged in a row, the substrate has a plurality of film-forming regions in the row direction of the plurality of element rows, the mask has a plurality of mask regions corresponding to the plurality of film-forming regions in the row direction, the plurality of subpixel rows consist of three types of pixel rows: a first pixel row having a pixel row of subpixels of a first color, a second pixel row having a pixel row of subpixels of a second color, and a third pixel row having a pixel row of subpixels of a third color, the plurality of mask regions consist of three types of mask regions: a first mask region where a first aperture row is formed, a second mask region where a second aperture row is formed, and a third mask region where a third aperture row is formed, and when the first aperture row corresponds to the first subpixel row at a position in the row direction, the first aperture row, the second aperture row, and the third aperture row are formed such that the second aperture row corresponds to one of the second subpixel row and the third subpixel row, and the third aperture row corresponds to the other. A mask characterized by the following features.

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