Device and method for controlling NV quantum sensor-based automatic detection of semiconductor wafer micropattern size and micropattern defect

Abstract

The present invention relates to a device and a method for controlling NV quantum sensor-based automatic detection of a semiconductor wafer micropattern size and a micropattern defect, the device comprising a wafer inspection head module 100, a non-contact wafer micropattern NV quantum-sensing module 200, a stage module 300 for wafer inspection, and an intelligent control module 400, wherein: versatility and adaptability are provided to wafers in various sizes and forms; precise wafer alignment is achieved; the scanning accuracy of the non-contact wafer micropattern NV quantum-sensing module is increased; noise of temperature changes, which affects NV center-based quantum sensing, is removed through a temperature maintenance control unit; and real-time analysis data and automatic correction data about the size, arrangement, and defect state of wafer micropatterns are generated through the intelligent control module.

Description

NV Quantum Sensor-Based Semiconductor Wafer Micropattern Size and Micropattern Defect Automatic Detection Control Device and Method

[0001] The present invention relates to an NV quantum sensor-based semiconductor wafer micropattern size and micropattern defect automatic detection control device and method, which is applied to a device for measuring the size of a semiconductor wafer micropattern and detecting defects, and more specifically, to a device and method that is non-contact at a height of 10 to 100 μm from the wafer surface, senses a photon or fluorescent signal regarding a spin change of a quantum dot due to an electric field or magnetic field change generated in the wafer micropattern through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, analyzes and controls the wafer micropattern size, and controls the device to automatically detect micropattern defects based on a change in the size of the micropattern on the wafer surface.

[0002] Accurately measuring the pattern size of a semiconductor wafer is a critical factor in ensuring quality in the semiconductor manufacturing process.

[0003] There are optical and contact methods for measuring the pattern size of semiconductor wafers.

[0004] In the case of optical methods, high-resolution microscopes or laser interferometers are used to measure the size and spacing of wafer micro-patterns; however, as the size of the micro-patterns decreases, a problem arises where precise measurement becomes difficult as the resolution limit (diffraction limit) is reached.

[0005] Furthermore, in the case of the contact method, although fine patterns are measured by physically scanning the wafer surface, problems arose such as the probe losing patterns, low inspection efficiency due to slow speed, and the inability to detect defective products early during the production process.

[0006] In particular, the currently used CD SEM (Critical Dimension Scanning Electron Microscope) provides high-resolution images, but it can damage the wafer surface and must operate in a vacuum, which has the problem of incurring high costs for installation and maintenance.

[0007] To solve the above problems, the present invention enables fine height adjustment of the distance between the wafer micropattern sensing NV quantum sensor part of the non-contact wafer micropattern NV quantum sensing module and the wafer surface to 10–100 μm through a wafer inspection head module; by configuring the non-contact wafer micropattern NV quantum sensing module, it is possible to sense photon or fluorescence signals regarding spin changes of quantum dots caused by changes in electric and magnetic fields generated in the wafer micropattern through NV centers composed of nitrogen atoms and vacancy defects within the diamond lattice structure, while operating non-contactually at a height of 10–100 μm from the wafer surface; and by configuring the wafer inspection stage module, all processes from wafer placement, alignment, rotation, and sensing can be automated in conjunction with an intelligent control module, and by configuring the intelligent control module, the wafer micropattern size, arrangement, and defect status can be analyzed in real time and automatic correction data can be generated, thereby enabling automatic detection of semiconductor wafer micropattern size and micropattern defects based on an NV quantum sensor. The purpose is to provide a control device and a method.

[0008] To achieve the above objective, the NV quantum sensor-based semiconductor wafer micropattern size and micropattern defect automatic detection control device according to the present invention

[0009] It is configured to be spaced parallel to the wafer surface at a height of 10 to 100 μm, and to sense photon or fluorescence signals regarding spin changes of quantum dots due to electric and magnetic field changes generated in the wafer micro-pattern through NV centers composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, then analyze and control the wafer micro-pattern size, and control to automatically detect micro-pattern defects by changes in the micro-pattern size on the wafer surface.

[0010]

[0011] More specifically, the above-mentioned NV quantum sensor-based semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device is,

[0012] A wafer inspection head module (100) positioned in a vacuum sealed space and positioned in a vertical direction aligned with the wafer inspection stage module, and positioning a non-contact wafer micro-pattern NV quantum sensing module while moving linearly along the X-axis and Y-axis directions relative to the wafer inspection stage module, and

[0013] A non-contact wafer micropattern NV quantum sensing module (200) formed along the upper internal space at the edge of a wafer inspection head facing a wafer inspection stage module, non-contacted at a height of 10 to 100 μm from the wafer surface (i.e., spaced 10 to 100 μm from the wafer surface), and sensing a photon or fluorescent signal regarding a spin change of a quantum dot due to an electric field or magnetic field change generated in the wafer micropattern through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, and then locking in and measuring the photon or fluorescent signal regarding the electric field or magnetic field change due to the sensed spin change of the quantum dot to form image spatial information regarding the size and arrangement of the wafer micropattern and a currently measured ODMR (Optical Detected Magnetic Resonance) spectrum;

[0014] A wafer inspection stage module (300) positioned at the bottom direction aligned with the wafer inspection head module and mounted on a wafer having a fine pattern, aligns the X and Y axis positions of the wafer with respect to a non-contact wafer fine pattern NV quantum sensing module, rotates the wafer 360 degrees, and positions the wafer surface having a fine pattern formed thereon so that it can be scanned non-contactually through the non-contact wafer fine pattern NV quantum sensing module, and

[0015] It is characterized by being composed of an intelligent control module (400) that is connected to a wafer inspection head module, a non-contact wafer micro-pattern NV quantum sensing module, and a wafer inspection stage module, and controls the overall operation of each device, analyzes and controls the wafer micro-pattern size, firstly controls the automatic detection of image defects, and secondly controls the automatic detection of micro-pattern defects by changes in the micro-pattern size on the wafer surface.

[0016] First, through the wafer inspection head module, the distance between the wafer micro-pattern sensing NV quantum sensor part of the non-contact wafer micro-pattern NV quantum sensing module and the wafer surface can be finely adjusted to 10 to 100 μm, and it can be moved quickly and accurately to various positions on the X and Y axes on the wafer surface, providing versatility and adaptability for wafers of various sizes and shapes, thereby improving inspection efficiency by 80% compared to the existing method.

[0017] Second, by configuring a non-contact wafer micro-pattern NV quantum sensing module, it is possible to sense the spin change of quantum dots caused by changes in electric and magnetic fields generated in the wafer micro-pattern through NV centers composed of nitrogen atoms and vacancy defects within the diamond lattice structure, which are non-contact at a height of 10 to 100 μm from the wafer surface, thereby enabling measurement without physical damage or interference while maintaining 80% improved precision of the micro-pattern compared to existing methods. Additionally, by utilizing Lock-In technology to separate and amplify signals in specific frequency bands to eliminate noise, it is possible to precisely measure changes in the wafer micro-pattern down to the nanometer scale and accurately identify wafer pattern defects and distortions at the nanometer level, thereby raising the quality control level of the semiconductor process by 1.5 to 3 times compared to existing methods.

[0018] Third, by configuring a wafer inspection stage module, wafer alignment can be performed precisely, thereby increasing the scanning precision of the non-contact wafer micro-pattern NV quantum sensing module by 80% compared to the existing method. Additionally, by maintaining the temperature at a constant level of 25±0.1°C through a temperature control unit, noise from temperature changes affecting NV center-based quantum sensing can be eliminated, thereby increasing NV sensing accuracy by 1.5 to 3 times. Furthermore, all processes from wafer placement, alignment, rotation, and sensing can be automated by linking with an intelligent control module.

[0019] Fourth, by configuring an intelligent control module, wafer patterns can be accurately measured at high resolution at the nanometer level, and minute size changes or defects can be precisely detected through peak shifts and spectral changes. Wafer damage can be prevented through non-contact scanning, and wafer micro-pattern size, arrangement, and defect status can be analyzed in real time and automatic correction data can be generated. Furthermore, through data-based learning, the precision and efficiency of defect detection algorithms can be improved by 80% compared to existing methods.

[0020] FIG. 1 is a block diagram illustrating the components of an automatic detection control device (1) for semiconductor wafer micro-pattern size and micro-pattern defects based on an NV quantum sensor according to the present invention.

[0021] FIG. 2 is a configuration diagram illustrating the components of a semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device (1) based on an NV quantum sensor according to the present invention.

[0022] FIG. 3 is a block diagram illustrating the components of a wafer inspection head module according to the present invention,

[0023] FIG. 4 is a perspective view illustrating the components of a wafer inspection head module according to the present invention.

[0024] FIG. 5 is a block diagram illustrating the components of a linear drive unit for X-axis movement according to the present invention.

[0025] FIG. 6 is a block diagram illustrating the components of a linear drive unit for Y-axis transfer according to the present invention.

[0026] FIG. 7 is a block diagram illustrating the components of a linear drive unit for lifting and lowering according to the present invention.

[0027] FIG. 8 is an exemplary embodiment illustrating the components of a piezo actuator type fine height adjustment unit according to the present invention.

[0028] FIG. 9 is a block diagram illustrating the components of a non-contact wafer micropattern NV quantum sensing module according to the present invention.

[0029] FIG. 10 is a configuration diagram illustrating the components of a non-contact wafer micropattern NV quantum sensing module according to the present invention.

[0030] FIG. 11 is an exploded perspective view illustrating the components of a non-contact wafer micropattern NV quantum sensing module according to the present invention.

[0031] FIG. 12 is a cross-sectional view illustrating the components of a non-contact wafer micropattern NV quantum sensing module according to the present invention.

[0032] FIG. 13 is a configuration diagram illustrating the connection relationships between the components of a non-contact wafer micropattern NV quantum sensing module according to the present invention.

[0033] FIG. 14 is a block diagram illustrating the components of a lock-in camera unit according to the present invention.

[0034] FIG. 15 is a perspective view illustrating the components of a lock-in camera unit according to the present invention.

[0035] FIG. 16 is a block diagram illustrating the components of a Lock In measuring element unit according to the present invention,

[0036] FIG. 17 is a graph illustrating that, through the lock-in image control unit according to the present invention, a signal proportional to the slope α of a curve obtained by lock-in measurement of a photon or fluorescence signal regarding the wafer micropattern size is measured to obtain information regarding the change in magnetic field ΔB(t).

[0037] FIG. 18 is a block diagram illustrating the components of an optical filter unit according to the present invention,

[0038] FIG. 19 is an exemplary illustration showing the components of a wafer micro-pattern sensing NV quantum sensor unit according to the present invention as viewed from a planar direction.

[0039] FIG. 20 is an embodiment illustrating the formation of a wafer micro-pattern sensing NV quantum sensor unit by using an ion implantation tool dedicated to semiconductors according to the present invention to fire an ion beam of nitrogen atoms at a diamond lattice on the surface and insert it into the crystal.

[0040] FIG. 21 is an embodiment illustrating that, within the lattice structure of diamond according to the present invention, a diamond-based NV center (141a), which is an NV center composed of nitrogen atoms and vacancy defects, is formed, and N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) are formed.

[0041] FIG. 22 is an exemplary illustration showing the process of making a diamond-based NV center according to the present invention.

[0042] FIG. 23 is an embodiment illustrating a wafer micro-pattern sensing NV quantum sensor unit according to the present invention, which is integrated and configured in a single array of 30 × 30 micrometers or less, such as 1024 qubits.

[0043] FIG. 24 is a block diagram illustrating the components of a first quantum dot qubit according to the present invention,

[0044] FIG. 25 is a block diagram illustrating the components of a second quantum dot qubit according to the present invention,

[0045] FIG. 26 is an embodiment illustrating that the wafer micro-pattern sensing NV quantum sensor unit according to the present invention is composed of optical sensing through a diamond-based NV center.

[0046] FIG. 27 is an embodiment illustrating the detection of a photon or fluorescence signal regarding a wafer micropattern through the spin shape of a diamond-based NV center according to the present invention using a continuous waveform detection technique.

[0047] FIG. 28 is a block diagram illustrating the components of a green laser generation control unit according to the present invention,

[0048] FIG. 29 is a block diagram illustrating the components of a quantum dot qubit control signal generation unit according to the present invention,

[0049] FIG. 30 is a block diagram illustrating the components of a multi-channel pulse waveform generation control unit according to the present invention,

[0050] FIG. 31 is a block diagram illustrating the components of a microwave signal generation unit according to the present invention,

[0051] FIG. 32 is an exemplary embodiment illustrating that a dual frequency driving signal generation control unit according to the present invention controls the simultaneous generation of two transitions, Ms=0↔Ms=-1 and Ms=0↔Ms=+1, through dual frequency driving.

[0052] FIG. 33 is an embodiment illustrating the control of the spin of a quantum dot qubit by applying a resonant microwave pulse through a microwave signal generation unit according to the present invention.

[0053] FIG. 34 illustrates an embodiment in which a resonant microwave pulse that resonates only at the spin-up transition is applied through a microwave signal generator according to the present invention to stimulate a quantum dot qubit only when it spins up, and at this time, a photon or fluorescence signal regarding the wafer fine pattern size is detected.

[0054] FIG. 35 is a block diagram illustrating the components of a wafer inspection stage module according to the present invention,

[0055] FIG. 36 is a perspective view illustrating the components of a wafer inspection stage module according to the present invention.

[0056] FIG. 37 is a block diagram illustrating the components of an intelligent control module according to the present invention,

[0057] FIG. 38 is an exemplary diagram illustrating the operation process of an automatic detection control device (1) for semiconductor wafer micro-pattern size and micro-pattern defects based on an NV quantum sensor according to the present invention.

[0058] FIG. 39 is an embodiment illustrating the control of analyzing the wafer micropattern size through a wafer micropattern size analysis control unit according to the present invention.

[0059] FIG. 40 is an embodiment illustrating the control of automatically detecting image defects regarding wafer micro-pattern size and arrangement through an image defect analysis control unit according to the present invention.

[0060] FIG. 41 is a flowchart illustrating a control method for automatic detection of semiconductor wafer micropattern size and micropattern defects based on an NV quantum sensor according to the present invention.

[0061] FIG. 42 is a flowchart illustrating a specific process for forming image space information regarding the wafer micropattern NV quantum sensing module according to the present invention, wherein the photon or fluorescence signal regarding the spin change of a quantum dot due to changes in the electric field or magnetic field generated in the wafer micropattern is sensed through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and the photon or fluorescence signal regarding the changes in the electric field or magnetic field due to the sensed spin change of the quantum dot is locked in and measured to form image space information regarding the wafer micropattern size and a currently measured ODMR (Optical Detected Magnetic Resonance) spectrum.

[0062] FIG. 43 is a flowchart illustrating a specific process in which, through an intelligent control module according to the present invention, the wafer micro-pattern size is analyzed and controlled, first, the presence of image defects is automatically detected, and second, the micro-pattern defects are automatically detected by a change in the micro-pattern size on the wafer surface.

[0063] A wafer inspection head module that aligns a non-contact wafer micro-pattern NV quantum sensing module in a precise position while moving linearly along the X-axis and Y-axis directions based on a wafer inspection stage module;

[0064] A non-contact wafer micropattern NV quantum sensing module formed spaced apart from the wafer surface along the internal space of the wafer inspection stage module, detecting changes in quantum states due to changes in an external electric or magnetic field as optical signals, and analyzing them to form image space information regarding the wafer micropattern size and arrangement and a currently measured ODMR (Optical Detected Magnetic Resonance) spectrum;

[0065] A wafer inspection stage module that aligns the X and Y axis positions of a wafer with a fine pattern formed thereon based on a non-contact wafer fine pattern NV quantum sensing module, rotates and moves the wafer to position the wafer surface with the fine pattern formed thereon so that it can be scanned non-contactually through the non-contact wafer fine pattern NV quantum sensing module;

[0066] An NV quantum sensor-based semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device characterized by including an intelligent control module that analyzes and controls the wafer micro-pattern size, controls to automatically detect image defects in the first stage, and controls to automatically detect micro-pattern defects by changes in the micro-pattern size of the wafer surface in the second stage.

[0067] Prior to the description of the present invention, the following specific structural or functional descriptions are merely illustrative for the purpose of explaining embodiments according to the concept of the present invention. Embodiments according to the concept of the present invention may be implemented in various forms and should not be interpreted as being limited to the embodiments described herein. Furthermore, since embodiments according to the concept of the present invention may be subject to various modifications and may take various forms, specific embodiments are to be described in detail in this specification. However, this is not intended to limit embodiments according to the concept of the present invention to specific disclosed forms, and should be understood to include all modifications, equivalents, and substitutions that fall within the spirit and scope of the present invention.

[0068]

[0069] First, in the "wafer micropattern" and "wafer having a micropattern formed" described in the present invention, the micropattern refers to a pattern formed by mixing one or more of the following: a metal wiring pattern with a line width of 10 to 20 nm to transmit electrical signals between transistors within the wafer; a gate pattern with a gate length of 7 to 14 nm to control the current flow of the transistors; via and contact patterns with a diameter of 20 to 30 nm to electrically connect upper and lower wiring; a trench pattern with a diameter of 200 nm to provide electrical insulation or prevent interference between signal lines; and a pitch pattern with a diameter of 20 to 40 nm to provide repetitive line widths and spacing.

[0070] In the present invention, a pattern formed with 10 to 40 nm is referred to as a fine pattern.

[0071] In addition, the wafer micro-pattern size described in the present invention includes the thickness, width, width, length, and width of the metal wiring pattern, gate pattern, via and contact pattern, and pitch pattern.

[0072] Hereinafter, preferred embodiments according to the present invention will be described with reference to the accompanying drawings.

[0073] FIG. 1 is a block diagram illustrating the components of a semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device (1) based on an NV quantum sensor according to the present invention, and FIG. 2 is a configuration diagram illustrating the components of a semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device (1) based on an NV quantum sensor according to the present invention. This device is configured to be non-contacted at a height of 10 to 100 μm from the wafer surface, and to sense photon or fluorescence signals regarding spin changes of quantum dots due to electric field and magnetic field changes generated in the wafer micro-pattern through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, and then analyze and control the wafer micro-pattern size and control the automatic detection of micro-pattern defects by changes in the micro-pattern size on the wafer surface. At this time, the photon is substantially the same as the fluorescence signal.

[0074] More specifically, the above-mentioned NV quantum sensor-based semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device (1) is composed of a wafer inspection head module (100), a non-contact wafer micro-pattern NV quantum sensing module (200), a wafer inspection stage module (300), and an intelligent control module (400).

[0075] First, a wafer inspection head module (100) according to the present invention will be described.

[0076] The wafer inspection head module (100) is positioned in a vacuum sealed space and is positioned in a vertical direction on the same line as the wafer inspection stage module, and moves in a straight line along the X-axis and Y-axis directions relative to the wafer inspection stage module, thereby serving to position the non-contact wafer micro-pattern NV quantum sensing module.

[0077] As shown in FIG. 3, this consists of a module body (110), a wafer inspection head (120), a linear drive unit for X-axis movement (130), a linear drive unit for Y-axis movement (140), a linear drive unit for raising and lowering (150), and a piezo actuator type fine height adjustment unit (160).

[0078] First, the module body (110) according to the present invention will be described.

[0079] The module body (110) according to the present invention is a module body (110) in the shape of an "ㄱ".

[0080] The above "L" shaped module body (110) is formed in an "L" shape when viewed from the side, and serves to protect and support each device from external pressure.

[0081] As illustrated in FIG. 4, a wafer inspection head is formed when viewed from the front, a linear drive unit for X-axis movement is formed on one side of the bottom of the wafer inspection head, a linear drive unit for Y-axis movement is formed on one side of the top of the linear drive unit for X-axis movement, a linear drive unit for lifting and lowering is formed on one side of the linear drive unit for Y-axis movement, and a piezo actuator type fine height adjustment unit is formed on one side of the wafer inspection head facing the wiper inspection stage module.

[0082] Second, the wafer inspection head unit (120) according to the present invention will be described.

[0083] The wafer inspection head (120) is formed along the vertical longitudinal direction at a position spaced apart from the module body in parallel.

[0084] The wafer inspection head unit (120) is formed along the vertical length direction when viewed from the front, and moves up and down in the X-axis and Y-axis directions relative to the wafer inspection stage module, thereby serving to position the non-contact wafer fine pattern NV quantum sensing module.

[0085] This is formed in an "l" shape along the vertical length direction, and a support box is formed on one side of the edge facing the wafer inspection stage module, which includes and supports the wafer fine pattern sensing NV quantum sensor part of the non-contact wafer fine pattern NV quantum sensing module.

[0086] Moving in the X-axis direction relative to the above-mentioned wafer inspection stage module means moving by receiving the force of linear motion for X-axis movement from the linear drive unit for X-axis movement.

[0087] Here, the X-axis refers to the left-right direction based on the wafer inspection stage module.

[0088] Moving in the Y-axis direction relative to the above-mentioned wafer inspection stage module means moving by receiving the force for linear motion of forward and backward in the Y-axis direction from the linear drive unit for Y-axis transfer.

[0089] Here, forward and backward refer to the forward and backward directions along the Y-axis relative to the wafer inspection stage module.

[0090] Third, a linear drive unit (130) for X-axis movement according to the present invention will be described.

[0091] The above X-axis transfer linear drive unit (130) is located at one side of the rear end of the wafer inspection head unit and generates a linear motion force for X-axis transfer that moves the wafer inspection head unit in the X-axis direction relative to the wafer inspection stage module, and transmits it toward the wafer inspection head unit.

[0092] As shown in FIG. 5, this consists of an LM rail section (131) for X-axis movement, an LM block section (132) for X-axis movement, and a linear drive actuator section (133) for X-axis movement.

[0093] The above X-axis transfer LM rail part (131) serves as a guide to allow the X-axis transfer LM block part to move in the X-axis direction.

[0094] The above X-axis transfer LM block part (132) is in contact with the wafer inspection head part and receives the force of linear motion of X-axis transfer moving in the X-axis direction from the X-axis transfer linear drive type actuator part, and plays the role of transferring along the X-axis transfer LM rail part.

[0095]

[0096] The above X-axis transfer linear drive actuator unit (133) serves to generate a force for linear motion of X-axis transfer that moves the wafer inspection head unit in the X-axis direction relative to the wafer inspection stage module.

[0097]

[0098] Fourth, a linear drive unit (140) for Y-axis transfer according to the present invention will be described.

[0099] The above Y-axis transfer linear drive unit (140) is located on one side of the lower part of the X-axis transfer linear drive unit and serves to move the wafer inspection head unit forward and backward in the Y-axis direction relative to the wafer inspection stage module.

[0100] As shown in FIG. 6, this consists of an LM rail section (141) for Y-axis movement, an LM block section (142) for Y-axis movement, and a linear drive actuator section (143) for Y-axis movement.

[0101]

[0102] The above Y-axis transfer LM rail part (141) serves as a guide so that the Y-axis transfer LM block part moves forward and backward in the Y-axis direction.

[0103]

[0104] The above Y-axis transfer LM block (142) is in contact with the X-axis transfer linear drive unit and the wafer inspection head unit, and receives the force of linear motion of Y-axis transfer moving forward and backward in the Y-axis direction from the Y-axis transfer linear drive type actuator unit, and plays the role of transferring along the Y-axis transfer LM rail unit.

[0105]

[0106] The above-mentioned linear drive actuator unit (143) for Y-axis transfer serves to generate a force for linear motion of Y-axis transfer, which moves the wafer inspection head unit forward and backward in the Y-axis direction relative to the wafer inspection stage module.

[0107]

[0108] Fifth, a linear drive unit (150) for raising and lowering according to the present invention will be described.

[0109] The above-mentioned linear drive unit (150) for lifting and lowering is located on one side of the linear drive unit for Y-axis transfer and serves to lift and lower to approach the wafer surface to which the wafer micro-pattern is to be sensed, so that the non-contact wafer micro-pattern NV quantum sensing module is positioned correctly.

[0110] As shown in FIG. 7, this consists of an LM rail section (151) for lifting and lowering, an LM block section (152) for lifting and lowering, and a linear drive actuator section (153) for lifting and lowering.

[0111]

[0112] The above-mentioned LM rail section (151) serves as a guide to allow the LM block section for the up and down movement.

[0113]

[0114] The above-mentioned LM block part (152) for lifting and lowering is in contact with the X-axis transfer and receives the force of linear motion for lifting and lowering from the linear drive type actuator part for lifting and lowering, and plays the role of lifting and lowering along the LM rail part for lifting and lowering.

[0115]

[0116] The above-mentioned linear drive actuator unit (153) for lifting and lowering serves to generate a force for linear motion for lifting and lowering.

[0117]

[0118] Sixth, a piezo actuator type fine height adjustment unit (160) according to the present invention will be described.

[0119] The above piezo actuator type fine height adjustment unit (160) is located on one side of the wafer inspection head unit facing the wafer inspection stage module and, through a linear drive unit for raising and lowering, serves to finely adjust the height of the distance between the wafer fine pattern sensing NV quantum sensor unit of the adjacent non-contact wafer fine pattern NV quantum sensing module and the wafer surface to 10 to 100 μm.

[0120] As shown in Fig. 8, this is configured to precisely adjust the position at the nanometer level by applying voltage utilizing the piezoelectric effect of the piezoelectric material.

[0121] Here, the piezoelectric material is composed of a ceramic base (PZT: Lead Zirconate Titanate).

[0122] In addition, the fine height adjustment signal is generated externally through a joystick or a computer-controlled input system.

[0123]

[0124] Thus, by configuring a wafer inspection head module according to the present invention, which comprises a module body in the shape of an "ㄱ", a wafer inspection head unit, a linear drive unit for X-axis movement, a linear drive unit for Y-axis movement, and a piezo actuator type fine height adjustment unit, the distance between the wafer fine pattern sensing NV quantum sensor unit of the non-contact wafer fine pattern NV quantum sensing module and the wafer surface can be finely adjusted to a height of 10 to 100 μm, and can be moved quickly and accurately to various positions on the wafer surface along the X and Y axes, and provides versatility and adaptability for wafers of various sizes and shapes, thereby improving inspection efficiency by 80% compared to the existing method.

[0125]

[0126] Next, a non-contact wafer micro-pattern NV quantum sensing module (200) according to the present invention will be described.

[0127] The above-mentioned non-contact wafer micro-pattern NV quantum sensing module (200) is formed along the upper internal space at the edge of the wafer inspection head unit facing the wafer inspection stage module, and is non-contacted at a height of 10 to 100 μm from the wafer surface. It senses the photon or fluorescent signal regarding the spin change of quantum dots according to the electric field and magnetic field change generated in the wafer micro-pattern through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and then locks in and measures the photon or fluorescent signal regarding the electric field and magnetic field change according to the sensed spin change of quantum dots to form image space information regarding the wafer micro-pattern size and arrangement and the currently measured ODMR (Optical Detected Magnetic Resonance) spectrum.

[0128] As illustrated in FIGS. 9 and 10, this consists of a Lock In camera unit (210), an optical filter unit (220), an elliptic reflector unit (230), a wafer fine pattern sensing NV quantum sensor unit (240), a quartz base plate unit (250), a half ball lens (260), a green laser generation control unit (270), a quantum dot qubit control signal generation unit (280), a multi-channel pulse waveform generation control unit (290), a microwave signal generation unit (290a), and an ODMR spectrum generation control unit (290b).

[0129] In particular, the Lock In camera unit (210), optical filter unit (220), elliptic reflector unit (230), wafer fine pattern sensing NV quantum sensor unit (240), quartz base plate unit (250), and half ball lens (260) are formed in a rectangular shape with a layered structure as shown in FIGS. 11 and 12, and are positioned non-contactually at a height of 10 to 100 μm from the wafer surface.

[0130] In addition, the Lock In camera unit (210), green laser generation control unit (270), quantum dot qubit control signal generation unit (280), multi-channel pulse waveform generation control unit (290), microwave signal generation unit (290a), ODMR spectrum generation control unit (290b), and ODMR spectrum generation control unit (290b) are made of MEMS (micro-electromechanical systems) as shown in FIG. 9, and each is formed into a modular structure and is located inside the module space of the intelligent control module.

[0131] And, the green laser generation control unit (270), the quantum dot qubit control signal generation unit (280), the multi-channel pulse waveform generation control unit (290), and the microwave signal generation unit (290a) are located on one side of the internal space of the wafer inspection head unit and are configured to be connected to the wafer fine pattern sensing NV quantum sensor unit (240) located at the edge via an electrical line.

[0132]

[0133] First, the Lock In camera unit (210) according to the present invention will be described.

[0134] The above Lock In camera unit (210) is located on the top of the optical filter unit and is formed in a square shape, and plays the role of forming image spatial information regarding the wafer micro-pattern size and arrangement based on the image obtained by Lock In measuring the photon or fluorescence signal transmitted from the optical filter unit at each pixel.

[0135] This has a higher signal-to-noise ratio compared to conventional cameras as a Lock In measurement, and has the characteristic of having less than half the number of pixels (292 × 282) compared to conventional cameras.

[0136] In addition, the measurement area is 150 x 150 µm² (1 pixel: 0.7 µm, adjustable depending on the situation), and dual transition is applied to minimize noise caused by contrast and temperature, and the magnetic field <100> Through directional alignment, it has characteristics of a 2.7 improvement over the existing signal, thick NV, and low P1 concentration (existing 10 µm / 1 MHz → 40 µm / 0.47 MHz).

[0137] As shown in FIGS. 14 and 15, the above Lock In camera unit (210) is composed of a Lock In measuring element unit (211), a microlens type light receiving unit (212), a camera sensor (213), and a Lock In image control unit (214).

[0138]

[0139] [Lock In measuring element part (211)]

[0140]

[0141] The above Lock In measuring element unit (211) separates a specific signal from noise and then extracts only the pure signal through synchronization with a periodic input signal.

[0142] This consists of a signal generator (211a), a phase detector (211b), and a low-pass filter (211c), as illustrated in FIG. 16.

[0143]

[0144] The above signal generator (211a) serves to generate a periodic reference signal.

[0145] This provides a reference synchronized with the frequency of the signal to be detected.

[0146]

[0147] The above phase detector (211b) compares the input signal with the reference signal and extracts the synchronized signal.

[0148] This is configured to amplify only the desired signal based on the phase difference between the signal and the noise.

[0149]

[0150] The above low-pass filter (211c) acts as a filter that removes high-frequency noise from the detected signal, leaving only a pure low-frequency signal.

[0151]

[0152] [Microlens-type light receiving part (212)]

[0153]

[0154] The above-mentioned microlens-type light receiving unit (212) is formed as a microlens and serves to detect and receive light by concentrating the light reaching each pixel.

[0155] This consists of an array of multiple fine lenses located on the camera sensor, and is designed with optimized lens curvature and size to better collect light entering the pixels.

[0156]

[0157] [Camera sensor (213)]

[0158]

[0159] The above camera sensor (213) converts light entering through a microlens-type light receiver into an electrical signal and performs the role of digitizing the image of the Lock In measurement.

[0160] This is configured to detect light entering through a lens, collect the light intensity and color information, convert them into digital signals, and generate image data.

[0161] And, it consists of a CMOS (Complementary Metal-Oxide Semiconductor) sensor or a CCD (Charge-Coupled Device) sensor.

[0162] Here, CMOS sensors have the advantage of consuming less power and processing quickly, with each pixel independently detecting light and generating an electrical signal, while CCD sensors have the characteristic of providing high-quality images by generating an electrical signal in a single line after all pixels detect light.

[0163] And, the number of pixels ranges from tens of thousands to millions.

[0164]

[0165] [Lock-in image control unit (214)]

[0166]

[0167] The above lock-in image control unit (214) measures the spatial wafer micro-pattern distribution based on the image of the lock-in measurement digitized through the camera sensor and controls the formation of image spatial information regarding the wafer micro-pattern size and arrangement.

[0168] In other words, by using the image of the Lock In measurement, a curve in the form of the derivative of ODMR (Optical Detected Magnetic Resonance) is obtained.

[0169] At this time, as shown in FIG. 17, a signal proportional to the slope α of the curve obtained by Lock In measurement of the photon or fluorescence signal regarding the wafer fine pattern size is measured, thereby obtaining information about the change in magnetic field ΔB(t).

[0170]

[0171] Given the contrast (C) and linewidth (Δf) of the ODMR curve, and the current (IPH) generated from the fluorescence reaching the photodiode, the shot-noise limited sensitivity is calculated.

[0172] As shown in Fig. 17, the source of the shot noise represents the current IPH generated by the camera sensor, and the noise spectral density (NSD) due to the current is It is set to.

[0173] When there is a load resistor RL, the noise caused by short-circuit noise at the final output stage is It becomes.

[0174] In this process, The Johnson noise effect generated by the load resistance itself must be ignored by satisfying this condition.

[0175] The zero-crossing slope α of the locking curve is It is set approximately as.

[0176]

[0177] Based on this principle, the short noise limiting sensitivity η as shown in the following Equation 1 B It can be expressed as follows.

[0178]

[0179]

[0180]

[0181] Here, the magnetic field sensitivity of the wafer fine pattern sensing NV quantum sensor part is proportional to the linewidth and linearly inversely proportional to the contrast, and the photocurrent I PH It is inversely proportional in the form of a square root.

[0182]

[0183] Through this, the lock-in image control unit according to the present invention measures the spatial wafer fine pattern distribution using a lock-in camera measurement method and forms image spatial information regarding the wafer fine pattern size.

[0184]

[0185] Second, the optical filter unit (220) according to the present invention will be described.

[0186] The optical filter unit (220) is located at the bottom of the Lock In camera unit and is formed in a square shape, and serves to collect photons or fluorescent signals transmitted from the elliptic reflector unit, optically filter them, and then transmit them to the Lock In camera unit.

[0187] As shown in FIG. 18, this consists of a bandpass filter (221), a blocking filter (222), a polarizing filter (223), and a photon concentrator (224).

[0188]

[0189] The above bandpass filter (221) serves to allow only light of a specific wavelength range (band) to pass through and to block the remaining wavelengths.

[0190]

[0191] The above blocking filter (222) is located on the upper layer of the bandpass filter and works together with the bandpass filter to completely block light of a specific wavelength range.

[0192]

[0193] The above polarizing filter (223) is located on the upper layer of the blocking filter and serves to remove reflected light or unnecessary polarization components by adjusting the polarization state of the light.

[0194]

[0195] The above photon concentrator (224) is located on the upper layer of the polarizing filter and collects photons or fluorescent signals filtered through the bandpass filter, blocking filter, and polarizing filter, and then transmits them to the Lock In camera unit after optical filtering.

[0196]

[0197] Thus, by configuring an optical filter unit (220) consisting of a bandpass filter (221), a blocking filter (222), a polarizing filter (223), and a photon concentrator (224), the signal-to-noise ratio (SNR) can be improved by 80% compared to the existing one, the accuracy of the data collected by the Lock In camera unit can be increased by 1.5 to 3 times compared to the existing one, and the efficiency of the Lock In camera unit can be improved by selectively strengthening the desired wavelength band through the filter and blocking unnecessary light.

[0198]

[0199] Third, the reflector (Elliptic reflector) part (230) according to the present invention will be described.

[0200] The above-mentioned reflector (Elliptic reflector) part (230) is positioned to surround the wafer fine pattern sensing NV quantum sensor part and the half ball lens, and the surface facing the wafer fine pattern sensing NV quantum sensor part and the half ball lens is formed in an elliptical shape, so as to reflect the photon or fluorescent signal generated from the wafer fine pattern sensing NV quantum sensor part and the photon or fluorescent signal reflected from the half ball lens back toward the optical filter part.

[0201] As shown in FIG. 12, this consists of a support structure body (231), an elliptical reflective surface (232), and a reflective coating part (233).

[0202]

[0203] The above support structure body (231) serves to support the wafer fine pattern sensing NV quantum sensor part and the half ball lens so as to surround them.

[0204] This is configured such that an elliptical reflective surface is formed in the area where the wafer fine pattern sensing NV quantum sensor part and the half ball lens are viewed, and a reflective coating part is formed on the surface of the elliptical reflective surface.

[0205]

[0206] The elliptical reflective surface (232) is designed to be elliptical and serves to concentrate and reflect photons or fluorescent signals generated or reflected from the wafer micro-pattern sensing NV quantum sensor unit and the half ball lens toward the optical filter unit.

[0207]

[0208] The above-mentioned reflective coating portion (233) is formed as a coating on the surface of an elliptical reflective surface and serves to increase the reflectivity of photons or fluorescent signals.

[0209] This is formed by coating with aluminum or gold material.

[0210]

[0211] Fourth, the wafer fine pattern sensing NV quantum sensor unit (240) according to the present invention will be described.

[0212] The wafer micro-pattern sensing NV quantum sensor unit (240) is located at the bottom of the reflector (Elliptic reflector) unit and is non-contacted at a height of 10 to 100 μm from the wafer surface. It plays the role of sensing and detecting photon or fluorescent signals regarding spin changes of quantum dots due to electric field and magnetic field changes generated in the wafer micro-pattern through NV centers composed of nitrogen atoms and vacancy defects within the lattice structure of diamond.

[0213] Here, the changes in electric and magnetic fields generated in the wafer micro-pattern are as follows.

[0214] Since the wafer fine pattern is composed of doped semiconductor regions where charge is accumulated or an electric field is generated, a change in the electric field is formed due to the voltage difference between different doping regions (p-type and n-type).

[0215] In addition, the wafer micropattern contains a spiral conductor or microcoil designed to allow current to flow, or contains a magnetic material (nanomatous magnet), so that a change in the magnetic field is formed while the current flows.

[0216] Accordingly, the wafer micro-pattern sensing NV quantum sensor unit according to the present invention detects by sensing a photon or fluorescence signal regarding a spin change of a quantum dot due to a change in an electric field or magnetic field generated in the wafer micro-pattern.

[0217]

[0218] The above wafer micro-pattern sensing NV quantum sensor unit (240) is based on a diamond-based NV center and is composed of useful sensors for DC and AC magnetic fields to enable sensitive and wide-field magnetic imaging under ambient conditions.

[0219] And, using a diamond-based NV center, it is configured to detect frequencies within 10 GHz from DC with a bandwidth of up to 100 kHz.

[0220] Sensitivity sets the weakest magnetic field sensitivity that can be detected with a single signal-to-noise ratio (SNR) in a given bandwidth.

[0221] It is composed of N different diamond-based NV centers in the sensing volume, and has the characteristic of improving sensitivity to √N and reaching a sensitivity level of pT / √Hz.

[0222] In addition, the diamond-based NV center is configured to be used for wide-area magnetic imaging at room temperature.

[0223] Since diamond-based NV centers have four possible orientations within the diamond crystal, they are configured to be used for vector magnetic measurements as well.

[0224] In addition, the ambient operating conditions and high sensitivity of the diamond-based NV center provide a wide frequency range and a strong signal.

[0225]

[0226] As shown in FIG. 19, the wafer micro-pattern sensing NV quantum sensor unit (240) is composed of a sensor unit body (241), a qubit metal gate unit (242), a microwave strip line gate (243), a first quantum dot qubit (244), and a second quantum dot qubit (245).

[0227]

[0228] [Sensor unit body (241)]

[0229]

[0230] The sensor body (241) is formed in a slim rectangular shape of 1mm × 1mm × 1mm (width × height × depth) and serves to protect and support each device from external pressure.

[0231] That is, the sensor body (241) is formed in a slim rectangular shape with a width of 1 mm, a length of 1 mm, and a height of 1 mm, and serves to protect and support each device from external pressure.

[0232] As shown in FIG. 20, an ion implantation tool dedicated to semiconductors is used to fire an ion beam of nitrogen atoms at the surface diamond lattice and insert it into the crystal, and as shown in FIG. 21, a diamond-based NV center (141a), which is an NV center composed of nitrogen atoms and vacancy defects within the diamond lattice structure, is formed, and N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) are formed.

[0233] Here, thousands or tens of thousands of quantum dot qubits are formed, but for the explanation and understanding according to the present invention, a first quantum dot qubit and a second quantum dot qubit are formed.

[0234] At this time, a qubit metal gate is formed on one side of the upper surface of the diamond where the first quantum dot qubit and the second quantum dot qubit are formed, and a microwave strip line gate is formed on one side of the central line surface of the diamond.

[0235]

[0236] In addition, the sensor body according to the present invention is formed in various sizes depending on the purpose of use and shape, in addition to the size of 1mm × 1mm × 1mm (width × length × height).

[0237]

[0238] The above diamond-based NV center (241a) is formed more specifically through the following process.

[0239]

[0240] First, to remove carbon-based (graphite) impurities attached to the surface of quantum-grade diamonds, a mixed solution of sulfuric acid + sodium nitrate or sulfuric acid + hypochlorite + nitric acid (1:1:1) is sprayed at a high temperature (above 200 degrees).

[0241]

[0242] Next, the interface-treated diamond is formed into a seed diamond through HPHT (High Pressure High Temperature) and CVD (Chemical Vapor Deposition).

[0243] Here, HPHT refers to the synthesis of diamond under high temperature (1300°C) and high pressure (60,000 atmospheres), and CVD (Chemical Vapor Deposition) refers to the formation of a diamond layer by reacting a carbon-containing gas (mainly methane) with hydrogen, thereby depositing carbon atoms in a gaseous state onto a diamond substrate.

[0244]

[0245] Next, as shown in FIG. 22, a seed diamond is placed in a high-frequency plasma generator or an oxygen plasma treatment device, and a diamond layer is formed to grow slowly through oxygen plasma ashing.

[0246] That is, it is performed by including CYTOP spin coating and 180-degree hard baking.

[0247] At this time, a diamond-based NV center is formed as close as possible to the sample.

[0248] And, in the case where the diamond sensor is a flat plate, the layer is formed so as to be very close to the surface.

[0249]

[0250] Next, using a semiconductor-specific ion implantation tool, an ion beam of nitrogen atoms is fired at the diamond lattice on the surface and inserted into the crystal.

[0251] At this time, when implanting a nitrogen atom with an ion beam, 1 MeV, 1E19 / cm 2 It is formed as.

[0252] In addition, it contains nitrogen at a level of 10 ppm (based on Diamond Type 1b).

[0253]

[0254] Next, since the arrangement of diamond-based NV centers is important, diamonds are inserted into the surface, and a mask and resistor are used.

[0255] At this time, spin-coating is performed on the pT crystal.

[0256]

[0257] Next, in order to ensure that the correct pattern is placed on the diamond layer, the diamond chip with a fine pattern made by the theograph after removing the resist undergoes a high-temperature annealing step performed in a vacuum.

[0258] That is, after undergoing a 1-hour CYTOP rotary drying and 50-degree soft baking process, thermal deposition of a silver (Ag) mirror is performed.

[0259] At this time, an atomic void is created next to the embedded nitrogen atom.

[0260]

[0261] Finally, a wafer micro-pattern sensing NV quantum sensor part (240) is completed in which some electrons are trapped in the empty space of the diamond-based NV center to form electron spins that can be used as quantum dot qubits.

[0262] At this time, the completed wafer fine pattern sensing NV quantum sensor part (240) is formed with a structure in which a multi-layer dielectric and a metal reflector are combined, and the size is, for example, 3 x 3 x 0.5 mm 3 And, Ns0 and NV- concentrations have characteristics of 14 ppm and 2.5 ppm.

[0263] In addition, depending on the purpose and form of use, single-crystal diamond having a diamond-based NV center concentration of 5 ppm to 50 ppm is used and configured.

[0264]

[0265] The diamond-based NV center of the wafer micro-pattern sensing NV quantum sensor part formed through this process forms several unique functions required for a quantum information system.

[0266]

[0267] First, electron spins have the characteristic of having a very long consistency time of up to 0.8 to 1.5 seconds.

[0268] This means that it can be controlled with good qubits.

[0269] And, the qubit at this time can be operated over a wide temperature range up to room temperature (290K).

[0270]

[0271] Second, electron spin is not the only qubit within a quantum information system and possesses the characteristic of being usable as one of various qubits.

[0272] This combines with the environment's nuclear spin to provide additional qubits capable of storing and processing quantum information.

[0273]

[0274] In addition, electron spin interacts with photons, the fundamental particles of light.

[0275] This allows quantum states to be sent over long distances and connected to distant diamond-based NV centers, and entangled.

[0276]

[0277] In addition, the sensor body according to the present invention controls a quantum dot qubit through a qubit metal gate on one side of the diamond top surface using crossbar technology.

[0278] And, using a limited number of wires connected horizontally and vertically, a much larger number of components, such as quantum dots in a two-dimensional array, can be adjusted.

[0279]

[0280] Through this approach, the wafer micro-pattern sensing NV quantum sensor unit (240) is configured such that, as shown in FIG. 23, 1024 qubits are integrated into a single array of 30 × 30 micrometers or less.

[0281]

[0282] Through this configuration, a quantum integrated circuit is constructed in which different local arrays are interconnected with other local arrays on the same chip using quantum links, which are links capable of transmitting quantum information and entanglement.

[0283]

[0284] The above quantum integrated circuit is designed and fabricated to be capable of capturing more than 99% of photon or fluorescence signals through a structure combining a multi-layer dielectric and a metal reflector.

[0285] That is, a structure that is easy to fabricate by spin-coating a material with a low refractive index (cytop, n=1.35) is selected, a structure is designed to operate in a wide fluorescence emission wavelength band in NV, and the operational performance of the structure is confirmed through FDTD analysis and experiments.

[0286]

[0287] [Qubit metal gate part (242)]

[0288]

[0289] The above qubit metal gate section (242) serves to transmit a pulse waveform, which controls the quantum dot (QD) energy level and cross-coupling, generated from a multi-channel pulse waveform generation control section, to the first quantum dot qubit and the second quantum dot qubit on one side of the upper surface of the diamond.

[0290] As shown in FIG. 19, this is composed of a first qubit metal gate (242a) and a second qubit metal gate (242b), and is configured with a source and a drain formed on one side.

[0291]

[0292] The first qubit metal gate (242a) is connected to the first quantum dot qubit and serves to transmit a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling, generated from a multi-channel pulse waveform generation control unit, to the first quantum dot qubit.

[0293]

[0294] The second qubit metal gate (242b) is connected to the second quantum dot qubit and serves to transmit a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling, generated from a multi-channel pulse waveform generation control unit, to the second quantum dot qubit.

[0295]

[0296] As such, the qubit metal gate section (242), composed of the first qubit metal gate (22a) and the second qubit metal gate (242b), is configured with 10 channels, 100 channels, 1000 channels, and 10000 channels depending on the purpose and form of use, in addition to 2 channels.

[0297]

[0298] [Microwave strip line gate (243)]

[0299]

[0300] The above microwave strip line gate (243) is located on one side of the diamond center line surface and receives a resonant microwave pulse generated by the microwave signal generation unit and transmits it to the first quantum dot qubit and the second quantum dot qubit.

[0301] As shown in FIG. 19, when viewed from the planar direction, it is formed and configured as a dumbbell structure with wide sides and a narrow central part.

[0302]

[0303] [1st quantum dot qubit (244)]

[0304]

[0305] The first quantum dot qubit (244) has a diamond-based NV center formed by nitrogen atoms and vacancy defects within the lattice structure of diamond, and a neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) formed in the diamond-based NV center space, and plays a role in sensing the spin change of the quantum dot due to changes in the electric field and magnetic field generated in the wafer micro-pattern as a photon or fluorescent signal.

[0306] As shown in FIG. 24, this consists of a first quantum dot (244a), a first electron spin portion (244b), and a first quantum portion (244c).

[0307]

[0308] The first quantum dot (244a) is a structure in which electrons have quantized energy in a specific energy state and plays a role in changing spin in a specific form that occurs in the wafer fine pattern.

[0309] Here, specific form refers to the +1, 0, -1 form.

[0310]

[0311] The first electron spin unit (244b) is an electron spin state that is controlled to a state corresponding to 0 or 1, and plays a role in sensing a photon or fluorescent signal regarding the wafer fine pattern size through the superposition and quantum entanglement of the two states.

[0312]

[0313] The first quantum section (244c) is generated as electrons escape, interacts with electrons within the first quantum dot, and plays a role in forming the quantum state of the first quantum dot.

[0314] Here, a quantum state refers to a state that has a positive charge.

[0315]

[0316] [2nd quantum dot qubit (245)]

[0317]

[0318] The second quantum dot qubit (245) is located on one side of the first quantum dot qubit, and a diamond-based NV center is formed, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed in the diamond-based NV center space, and plays a role in sensing the spin change of the quantum dot due to the electric field and magnetic field change generated in the wafer micro-pattern as a photon or fluorescent signal.

[0319] As shown in FIG. 25, this consists of a second quantum dot (245a), a second electron spin portion (245b), and a second electron spin portion (245c).

[0320]

[0321] The second quantum dot (245a) above is a structure in which electrons have quantized energy in a specific energy state and plays a role in changing spin in a specific form that occurs in the wafer fine pattern.

[0322] Here, specific form refers to the +1, 0, -1 form.

[0323]

[0324] The second electron spin unit (245b) is an electron spin state that is controlled to a state corresponding to 0 or 1, and plays a role in sensing photon or fluorescent signals regarding the wafer fine pattern size through the superposition and quantum entanglement of the two states.

[0325]

[0326] The above second quantum part (245c) is generated as electrons escape, interacts with electrons within the second quantum dot, and plays a role in forming the quantum state of the second quantum dot.

[0327] Here, a quantum state refers to a state that has a positive charge.

[0328]

[0329] As such, the wafer micro-pattern sensing NV quantum sensor unit (240), composed of a sensor unit body (241), a qubit metal gate unit (242), a microwave strip line gate (243), a first quantum dot qubit (244), and a second quantum dot qubit (245), performs detection through a diamond-based NV center as optical detection, as shown in FIG. 26.

[0330] And, prior to optical detection, it is detected by a continuous waveform detection technique that detects photon or fluorescence signals regarding wafer micro-patterns through the spin shape of a diamond-based NV center.

[0331]

[0332] That is, as illustrated in FIG. 27, the continuous waveform detection technique divides the |ms = ±1> levels and measures the state independently. Since the |ms = ±1> levels of different NV directions in the spin shape of the diamond-based NV center are divided into different amounts depending on the direction of the external magnetic field, these NV directions can be distinguished from each other.

[0333] The green laser generated from the green laser generation control unit excites the spin shape of the diamond-based NV center without resonance, generating a photon or fluorescence signal regarding the wafer micro-pattern that can be detected by the photodiode unit, and the quantum dot qubit control signal generation module sends a resonant microwave (MW) frequency signal to the micro-antenna unit close to the spin shape of the diamond-based NV center to drive spin switching.

[0334]

[0335] Then, while transmitting a photon or fluorescence signal regarding the wafer micropattern toward the photodiode section, the resonant microwave (MW) frequency is swept.

[0336] When the resonant microwave (MW) frequency transitions from the |ms = 0> state to one of the |ms = ±1> states and enters a resonant state, a decrease in the fluorescence signal is observed.

[0337] Changes in fluorescence when the resonant microwave (MW) frequency resonates allow the intelligent control module to record the spectrum.

[0338]

[0339] As described above, by configuring a wafer fine pattern sensing NV quantum sensor unit consisting of a sensor unit body, a qubit metal gate, a microwave strip line gate, a first quantum dot qubit, and a second quantum dot qubit, it is possible to detect wafer fine patterns from -50 degrees to +150 degrees through photon or fluorescence signal sensing regarding lithium-ion wafer fine patterns, operate stably within a wide frequency range from DC to 10 GHz, maintain consistent performance even in a multi-channel environment, and improve sensor sensitivity and accuracy by 80% by minimizing signal distortion while maintaining sensitivity in various frequency bands through dynamic frequency and cross-coupling control.

[0340]

[0341] Fifth, the quartz base plate portion (250) according to the present invention will be described.

[0342] The above quartz base plate (250) is located at the bottom of the wafer micro-pattern sensing NV quantum sensor and supports the wafer micro-pattern sensing NV quantum sensor from the bottom direction, generates an electrical signal when receiving a magnetic field from the non-contact wafer surface, and maintains a constant frequency when there is an external temperature change or mechanical change of the wafer itself.

[0343] It is composed of the structure of silicon dioxide (SiO2) and has a hexagonal structure (alpha) and a trigonal structure (Beta) at high temperatures.

[0344] It is formed into a fixed crystal structure after maintaining piezoelectric properties and natural frequency.

[0345] In addition, the wafer fine pattern sensing NV quantum sensor section is configured to include an oscillator to maintain a stable frequency.

[0346] The thermal conductivity of the quartz base plate is 1.4 [W / m·k], which is more than 2000 times lower than that of diamond, and the diamond-quartz composite structure improves the inaccuracy in temperature measurement caused by the high thermal conductivity of diamond.

[0347]

[0348] In this way, the quartz base plate portion according to the present invention is coupled to be positioned at the bottom of the wafer micro-pattern sensing NV quantum sensor portion to support it, thereby improving structural strength and durability, enabling stable operation even in extreme environments such as high temperature and high pressure, and maintaining a constant frequency even under high temperature or external stimuli, thus increasing the stability of the electronic device.

[0349]

[0350] Sixth, a half ball lens (260) according to the present invention will be described.

[0351] The above half ball lens (260) is formed to be covered with a convex lens structure along the upper surface of the sensor body and serves to collect photon or fluorescence signals regarding the wafer fine pattern sensed by the first quantum dot qubit and the second quantum dot qubit of the wafer fine pattern sensing NV quantum sensor unit and transmit them toward the reflector (Elliptic reflector) unit.

[0352]

[0353] Seventh, a green laser generation control unit (270) according to the present invention will be described.

[0354] The above green laser generation control unit (270) is located on one side of the wafer fine pattern sensing NV quantum sensor unit and generates a 532nm green laser to stimulate the diamond-based NV center of the wafer fine pattern sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state to generate a photon or fluorescent signal regarding the wafer fine pattern size that can be detected by the Lock In camera unit, and controls the initialization of the electron spin state.

[0355] Here, the transition of a diamond-based NV center to a high energy state refers to exciting the spin shape of the diamond-based NV center without resonance. Then, a 532nm green laser is generated with a laser output of 0.1 to 1W and focused with a lens to form a pattern on the surface of the NV quantum sensor with a diameter of approximately 10 to 100μm. At this time, the wafer micro-pattern sensing NV quantum sensor portion that receives the 532nm green laser emits red light (red light) in the 700nm wavelength range as fluorescence.

[0356] As illustrated in FIG. 28, this consists of a green laser beam nozzle part (271) that shoots a green laser beam toward the beam splitter part, a green laser beam generating part (272) that generates a green laser beam, and a beam splitter part (273) that shoots toward the green laser beam nozzle part.

[0357]

[0358] In other words, if it returns directly to the ground state by the emission of photons or fluorescence signals, it generates red light.

[0359] When an electron in this state is exposed to a green laser beam, it is lifted to the degenerate state ms = ±1 (in quantum mechanics, the existence of two or more states for a single energy level) and recombined back into M.

[0360] Here, the state where ms=0 emits less red light, so the diamond appears darker.

[0361]

[0362] Eighth, the quantum dot qubit control signal generation unit (280) according to the present invention will be described.

[0363] The above quantum dot qubit control signal generation unit (280) generates a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious 1 GHz modulation bandwidth toward the wafer fine pattern sensing NV quantum sensor unit, and plays the role of controlling the quantum dot qubit, which is a component of the wafer fine pattern sensing NV quantum sensor unit.

[0364] More specifically, it is connected to a quantum dot qubit that forms a quantum dot in a diamond-based NV center of the wafer fine pattern sensing NV quantum sensor section.

[0365] Here, quantum dot qubits are electrons located in a quantum dot, represented as quantum bits, and have spin.

[0366] It features low phase noise and low spurious tone characteristics for high fidelity gates, high output power for short gate pulses without external amplification, and 14-bit output characteristics at 6 GSA.

[0367] In addition, waiting time can be minimized, quantum dot qubits can be controlled from 2 channels to N channels (1000 to 10000), and high-fidelity quantum dot qubit gate operations can be performed.

[0368] As shown in FIG. 29, the above quantum dot qubit control signal generation unit (280) is composed of a double superheterodyne algorithm engine unit (281), an analog output channel unit (282), a sequencer unit (283), a low-latency signal processing chain unit (284), a low-phase noise synthesizer (285), and a high-output power unit (286).

[0369]

[0370] The above double superheterodyne algorithm engine unit (281) upconverts the frequency of the input signal to generate a quantum dot qubit control signal in a wide frequency band (i.e., a frequency band within 10 GHz from DC).

[0371]

[0372] The above analog output channel section (282) serves to form an analog output channel that simultaneously controls a plurality of quantum dot qubits.

[0373] This is configured on one side of a box-shaped body by selecting one of 2 channels, 4 channels, 6 channels, 8 channels, or 12 channels.

[0374]

[0375] The above sequencer (283) determines the order of control signals and controls the signal timing between quantum dot qubits.

[0376]

[0377] The above low-latency signal processing chain (284) performs the role of controlling to minimize signal transmission delay by rapidly processing and transmitting control signals.

[0378] This allows for rapid response to real-time changes in quantum dot qubit states, making it effective in situations requiring a fast reaction.

[0379]

[0380] The above low-phase noise synthesizer (285) minimizes the phase noise of the control signal and generates a high-fidelity signal.

[0381]

[0382] The above high-output power unit (286) serves to form a short gate pulse by providing a powerful control signal without an external amplifier.

[0383] This enables fast and powerful control of quantum dot qubits, allowing for high-speed quantum gate operations.

[0384]

[0385] Thus, by configuring a quantum dot qubit control signal generation unit (280) consisting of a double superheterodyne algorithm engine unit (281), an analog output channel unit (282), a sequencer unit (283), a low-latency signal processing chain unit (284), a low-phase noise synthesizer (285), and a high-output power unit (286), a wide frequency range from DC to 10 GHz is supported, a spurious 1 GHz modulation bandwidth is provided, and high-speed control is possible through high output and short gate pulses, thereby making the system response time 1.5 to 2 times faster than the conventional one.

[0386]

[0387] Ninth, a multi-channel pulse waveform generation control unit (290) according to the present invention will be described.

[0388] The above multi-channel pulse waveform generation control unit (290) is connected to the wafer fine pattern sensing NV quantum sensor unit and plays the role of generating a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the wafer fine pattern sensing NV quantum sensor unit and outputting it.

[0389] Here, cross-coupling refers to controlling the coupling between non-adjacent resonators through a coupling window, such as coupling between other resonators rather than sequential coupling between resonators through a coupling window, thereby suppressing unwanted interactions and inducing accurate coupling only when necessary.

[0390] This is formed in a box shape and connected to a wafer fine pattern sensing NV quantum sensor unit, and is configured to include a 2.4 GSA, 16-bit, 750 MHz signal bandwidth, a direct mode (291) that maximizes bandwidth and improves noise performance as shown in FIG. 30, and an amplification mode (292) that raises the signal amplitude to 5 Vpp.

[0391] In addition, it features 144 output channels, high channel density formation, trigger-output delay of less than 50 ns, and multi-frequency digital modulation.

[0392] In addition, to counteract the effects of cross-coupling, additional pulses are configured to be applied to multiple gates (single-structure qubit metal gates, complex-structure qubit metal gates, microwave strip line gates).

[0393] In addition, to generate a single-structure qubit metal gate, the microwave source is modulated and configured to control quantum dot (QD) qubits and neighboring qubits through frequency multiplexing.

[0394]

[0395] Thus, by configuring a multi-channel pulse waveform generation control unit, the scalability of complex quantum systems can be maximized to process more quantum dot qubits simultaneously, and a response speed faster than existing technology can be provided with a trigger-output delay of less than 50 ns. Furthermore, by precisely controlling the interaction between quantum dot qubits, highly complex quantum computation tasks and photon sensing tasks regarding wafer fine pattern sizes can be performed with high precision, improved by 80% compared to existing methods.

[0396]

[0397] Tenth, the microwave signal generating unit (290a) according to the present invention will be described.

[0398] The microwave signal generation unit (290a) sends a microwave signal toward the wafer fine pattern sensing NV quantum sensor unit to control the spin switching of the quantum dot qubits of the diamond-based NV center.

[0399] Here, sending a microwave signal toward the wafer fine pattern sensing NV quantum sensor part means sending a microwave signal toward the microwave antenna in contact with the wafer fine pattern sensing NV quantum sensor part.

[0400] As shown in FIG. 31, this consists of a microwave signal generation unit (290a-1), a microwave amplifier unit (290a-2), and a microwave antenna unit (290a-3).

[0401]

[0402] The above microwave signal generation unit (290a-1) generates a resonant microwave pulse and transmits it to the microwave amplification unit. This is configured to include a dual frequency driving signal generation control unit (190a-1a).

[0403] As shown in FIG. 32, the dual frequency driving signal generation control unit (290a-1a) plays the role of controlling to simultaneously generate two transitions, Ms=0↔Ms=-1 and Ms=0↔Ms=+1, through dual frequency driving.

[0404] That is, when the phase of the Reference signal used in FM is reversed, the Lock-in signal of the Lock-In camera unit is set to SLIa = 2αΔB(t).

[0405] In addition, by doubling the signal magnitude or contrast, it can obtain double the sensitivity and eliminate the influence of external temperature changes to a very high degree in extreme environments, thereby having the characteristic of suppressing distortion of the magnetic field signal.

[0406] The dual frequency driving signal generation control unit is configured to include a MW generator (MW1) and a second MW generator (MW2).

[0407] That is, two reference signals (Ref1, Ref2) generated by a phase-synchronized 2-channel signal generator are applied to the MW generator (MW1) and the second MW generator (MW2) as reference signals required for FM.

[0408] And, when the frequencies of Ref1 and Ref2 are made equal and the phase difference is made by π, if only the change in magnetic field is observed, it is as shown in Fig. 32.

[0409] In other words, in the case of a single frequency, not only is the magnitude of the 10 Hz signal reduced by half, but baseline drift caused by temperature changes also occurs.

[0410] In addition, since such a phenomenon is not observed at dual frequency, spin changes of quantum dots occurring in wafer fine patterns can be stably measured as changes in the magnetic field without being affected by external temperature changes in extreme environments.

[0411]

[0412] The above microwave amplification unit (290a-2) serves to amplify the resonant microwave pulse generated by the microwave signal generation unit.

[0413]

[0414] As shown in FIG. 13, the microwave antenna section (290a-3) sends a resonant microwave pulse toward the quantum dot qubit of the diamond-based NV center to control spin switching.

[0415]

[0416] In this way, the microwave signal generation unit (190a), composed of a microwave signal generation unit (290a-1), a microwave amplifier unit (290a-2), and a microwave antenna unit (190a-3), shoots microwave pulses at the quantum dot qubit to make the electron spin up.

[0417] In this case, the pulse must have a very specific frequency, and that frequency depends on the bias magnetic field accompanying the electron.

[0418]

[0419] For example, the resonant microwave pulse is 45 GHz.

[0420] And, the resonant microwave pulse forms a bias magnetic field.

[0421] The bias magnetic field that spin-shifts quantum dot qubits has an electron resonance frequency.

[0422]

[0423] Therefore, when a resonant microwave pulse suitable for them arrives, all electrons are excited and change into a rotational state.

[0424] However, it has the characteristic of being able to stop at any time.

[0425]

[0426] As illustrated in FIG. 33, the spin of the quantum dot qubit is configured to be controlled by applying a resonant microwave pulse.

[0427] In other words, starting with an upward-pointing spin and applying a variable-length resonant microwave pulse, it can be observed that the spin rotates from top to bottom and then returns in a consistent manner.

[0428] Quantum superposition of spin-up and spin-down is generated in the middle of the rotation.

[0429]

[0430] In this case, the spin state is measured through an optical transition.

[0431]

[0432] Diamond-based NV centers have various optical transitions associated with various spin states, such as quantum dot qubits and neighboring quantum dot qubits.

[0433]

[0434] Therefore, as illustrated in FIG. 34, by applying a resonant microwave pulse that resonates only during the spin-up transition, the quantum dot qubit is stimulated only when it spins up, and at this time, a photon or fluorescence signal regarding the wafer fine pattern size is detected.

[0435]

[0436] Also, if the spin is lowered, the darkness is maintained.

[0437]

[0438] With this configuration and method, through the quantum dot qubit control signal generation module according to the present invention, it is possible to read what state the spin state of the quantum dot qubit is in and what it is.

[0439]

[0440] In this way, by configuring a microwave signal generation unit (290a) consisting of a microwave signal generation unit (290a-1), a microwave amplification unit (290a-2), and a microwave antenna unit (290a-3), the spin state of the quantum dot qubit can be accurately controlled, and a high-resolution signal can be detected along with the formation of a detection atmosphere capable of detecting a photon or fluorescent signal regarding the wafer fine pattern size according to the spin state.

[0441]

[0442] Eleventh, the ODMR spectrum generation control unit (290b) according to the present invention will be described.

[0443] The above ODMR spectrum generation control unit (290b) is located on one side of the Lock In camera unit and is formed in a square shape, and plays the role of controlling the generation of the current measurement ODMR spectrum based on the photon or fluorescence signal transmitted from the optical filter unit.

[0444] This detects changes in peak position in the ODMR spectrum through Lock In.

[0445] Lock In is Phase Sensitive Detection (PSD), and a signal in the 10~100KHz band operates as the reference frequency.

[0446] Through the microwave signal generator, the quantum dot qubit of the diamond-based NV center is generated at a resonance frequency (2.8 GHz).

[0447] Then, a frequency component identical to the reference frequency appears in the fluorescence of the quantum dot qubit of the diamond-based NV center and is configured to be detected by the lock-in amplifier (LIA).

[0448] The reference frequency signal of frequency modulation is used as a reference for the lock-in amplifier (LIA).

[0449] Due to frequency modulation, the ODMR spectrum obtained by the lock-in amplifier (LIA) takes on a differential form.

[0450] The ODMR peak corresponds to the zero-crossing position of the lock-in amplifier (LIA), and when the microwave signal is adjusted to this position through the microwave signal generator, the output signal of the lock-in amplifier (LIA) obtains an output signal corresponding to the change in the external low-frequency magnetic field.

[0451] In this case, the magnitude of the signal is proportional to the slope at the zero-crossing position.

[0452]

[0453] Thus, a non-contact wafer micropattern NV quantum sensing module is configured according to the present invention, comprising a Lock In camera unit (210), an optical filter unit (220), an elliptic reflector unit (230), a wafer micropattern sensing NV quantum sensor unit (240), a quartz base plate unit (250), a half ball lens (260), a green laser generation control unit (270), a quantum dot qubit control signal generation unit (280), a multi-channel pulse waveform generation control unit (290), a microwave signal generation unit (290a), and an ODMR spectrum generation control unit (290b). By being non-contact at a height of 10 to 100 μm from the wafer surface, it is possible to sense the spin change of quantum dots according to changes in electric and magnetic fields generated in the wafer micropattern through NV centers composed of nitrogen atoms and vacancy defects within the lattice structure of diamond as photon or fluorescence signals, thereby preventing physical damage or It is possible to measure without interference while maintaining 80% improved precision of fine patterns compared to existing methods, and by utilizing Lock-In technology to separate and amplify signals in specific frequency bands to eliminate noise, it is possible to precisely measure changes in wafer fine patterns down to the nanometer scale. Furthermore, by controlling the energy levels of quantum dot qubits through a multi-channel pulse waveform generation control unit, various patterns can be analyzed simultaneously. Above all, by accurately identifying wafer pattern defects and distortions at the nanometer level, the quality control level of the semiconductor process can be raised by 1.5 to 3 times compared to existing methods.

[0454]

[0455] Next, a wafer inspection stage module (300) according to the present invention will be described.

[0456] The above wafer inspection stage module (300) is positioned in the lower direction on the same line as the wafer inspection head module and, while the wafer with the fine pattern formed thereon is mounted, aligns the X and Y axis positions of the wafer with respect to the non-contact wafer fine pattern NV quantum sensing module and rotates the wafer 360 degrees to position the wafer surface with the fine pattern formed thereon so that it can be non-contact scanned through the non-contact wafer fine pattern NV quantum sensing module.

[0457] As illustrated in FIGS. 35 and 36, this is configured with a cylindrical drum-type stage platform part (310), a vacuum chuck part (320), a 360-degree turn-type stage part (330), a laser point-type position sensor part (340), a rotation angle sensor part (350), a temperature maintenance control part (360), a vibration absorption part (370), and an XY axis alignment part (380).

[0458]

[0459] First, the cylindrical drum-shaped stage platform part (310) according to the present invention will be described.

[0460] The above-mentioned cylindrical drum-shaped stage platform (310) is formed in the shape of a cylindrical drum and serves to support a wafer with a fine pattern formed thereon so that it does not shake due to external pressure.

[0461] This is configured such that a vacuum chuck is formed on one side of the lower part of the internal space of the central hole, a 360-degree turn-type stage is formed on one side of the lower part of the vacuum chuck, a laser point-type position sensor is formed on one side of the 360-degree turn-type stage, a rotation angle sensor is formed on one side of the upper head surface on which the wafer is placed, a temperature maintenance control unit is formed on one side of the rotation angle sensor, a vibration absorption unit is formed on one side of the bottom part, and an XY-axis alignment unit is formed on one side of the exterior.

[0462]

[0463] Second, the vacuum chuck (320) according to the present invention will be described.

[0464] The above vacuum chuck (320) is located on one side of the lower part of the internal space of the center hole of the cylindrical drum-shaped stage platform and serves to fix the wafer so that it does not shake or move by maintaining a vacuum state.

[0465]

[0466] Third, a 360-degree turn-type stage part (330) according to the present invention will be described.

[0467] The above 360-degree turn-rotating stage section (330) is located on one side of the bottom of the vacuum chuck section and serves to rotate the wafer with a fine pattern formed thereon 360 degrees based on the non-contact wafer fine pattern NV quantum sensing module.

[0468] This is configured to rotate the wafer with the formed micropattern 360 degrees so that the non-contact wafer micropattern NV quantum sensing module non-contact scans the micropattern in all directions.

[0469]

[0470] Fourth, the laser point type position sensor part (340) according to the present invention will be described.

[0471]

[0472] The above laser point type position sensor unit (340) is located on one side of the 360-degree turn type stage unit and shoots a laser point to sense the position so that the non-contact wafer micro-pattern NV quantum sensing module is positioned correctly on the wafer surface.

[0473]

[0474] Fifth, the rotation angle sensor part (350) according to the present invention will be described.

[0475] The above-mentioned rotation angle sensor unit (350) is located on one side of the upper head surface on which the wafer is placed, and serves to sense the rotation angle of the wafer that is rotated through the 360-degree turn-type stage unit.

[0476]

[0477] Sixth, the temperature maintenance control unit (360) according to the present invention will be described.

[0478] The above temperature maintenance control unit (360) controls the temperature of the cylindrical drum-shaped stage platform to be maintained at 25 degrees (±0.1°C error range) through a temperature stabilizer.

[0479] Here, the reason for maintaining the temperature of the cylindrical drum-type stage platform at a constant 25 degrees (±0.1°C error range) is that temperature changes can affect the spin state and fluorescence signal of the diamond-based NV center.

[0480]

[0481] Seventh, the vibration absorption part (370) according to the present invention will be described.

[0482] The above vibration absorption unit (370) absorbs external vibrations flowing toward the cylindrical drum-shaped stage platform unit, thereby enabling the wafer micro-pattern sensing NV quantum sensor unit of the non-contact wafer micro-pattern NV quantum sensing module to scan stably.

[0483]

[0484] Eighth, the XY axis alignment part (380) according to the present invention will be described.

[0485] The above XY-axis alignment transfer guide (380) serves to align the X and Y axis positions of a wafer placed on the upper head portion of a cylindrical drum-shaped stage platform with respect to a non-contact wafer micro-pattern NV quantum sensing module.

[0486] Here, being placed on and seated on the upper head portion of the cylindrical drum-shaped stage platform means that one of the following is selected and seated by a 5-axis driven robot arm: a wafer with a fine pattern formed through a photolithography process, a wafer with a fine pattern formed with a physical or chemical structure through an etching process, or a wafer with a fine pattern formed through a surface planarization process of CMP (Chemical Mechanical Polishing).

[0487] This consists of an alignment part (381) for X-axis movement and an alignment part (382) for Y-axis movement.

[0488]

[0489] The above X-axis transfer aligner (381) is located on one side of the lower part of the cylindrical drum-type stage platform and the Y-axis transfer aligner, and generates a linear motion force of X-axis transfer that moves the cylindrical drum-type stage platform and the Y-axis transfer aligner in the X-axis direction based on the non-contact wafer micro-pattern NV quantum sensing module, thereby serving to transfer the cylindrical drum-type stage platform and the Y-axis transfer aligner in the X-axis direction.

[0490]

[0491] The above Y-axis transfer alignment unit (382) is located at the bottom of the cylindrical drum-type stage platform unit and at the top of the X-axis transfer alignment unit, and generates a linear motion force for Y-axis transfer that moves the cylindrical drum-type stage platform unit in the Y-axis direction based on the non-contact wafer micro-pattern NV quantum sensing module, thereby serving to transfer the cylindrical drum-type stage platform unit in the Y-axis direction.

[0492]

[0493] Thus, by configuring a wafer inspection stage module according to the present invention, comprising a cylindrical drum-type stage platform, a vacuum chuck, a 360-degree turn-type stage, a laser point-type position sensor, a rotation angle sensor, a temperature maintenance control unit, a vibration absorption unit, and an XY-axis alignment unit, wafer alignment can be performed precisely, thereby increasing the scanning precision of the non-contact wafer micro-pattern NV quantum sensing module by 80% compared to the existing method. Furthermore, by maintaining the temperature at a constant level of 25±0.1°C through the temperature maintenance control unit, noise from temperature changes affecting NV center-based quantum sensing is eliminated, thereby increasing NV sensing accuracy by 1.5 to 3 times. Additionally, all processes from placing the wafer, alignment, rotation, and sensing can be automated by linking with an intelligent control module.

[0494]

[0495] Next, an intelligent control module (400) according to the present invention will be described.

[0496] The above intelligent control module (400) is connected to a wafer inspection head module, a non-contact wafer micro-pattern NV quantum sensing module, and a wafer inspection stage module, and controls the overall operation of each device, analyzes and controls the wafer micro-pattern size, and then controls to automatically detect image defects in the first step, and controls to automatically detect micro-pattern defects in the second step by changing the micro-pattern size on the wafer surface.

[0497] This is configured by selecting one of a microcomputer, a microprocessor, or an AI chip (including an NPU, GPU, and AI accelerator). It is then formed and configured within the internal space of the control module box.

[0498]

[0499] As shown in FIG. 37, the above intelligent control module (400) is composed of a height control unit (410) for a wafer fine pattern sensing NV quantum sensor, a diamond-based NV center activation control unit (420), a raster scanning control unit (430), a spiral scanning control unit (440), a wafer fine pattern size analysis control unit (450), an image defect analysis control unit (460), and an ODMR (Optical Detected Magnetic Resonance) spectrum comparison analysis control unit (470).

[0500]

[0501] First, a height control unit (410) for a wafer fine pattern sensing NV quantum sensor according to the present invention will be described.

[0502] The height control unit (410) for the wafer fine pattern sensing NV quantum sensor is connected to a piezo actuator type fine height control unit and drives the piezo actuator type fine height control unit to control the height of the distance between the wafer fine pattern sensing NV quantum sensor unit of the non-contact wafer fine pattern NV quantum sensing module and the wafer surface to be measured for the size of the wafer fine pattern to be finely adjusted to 10 to 100 μm.

[0503] This is set to a location capable of collecting photon or fluorescence signals regarding spin changes of quantum dots caused by electric and magnetic field changes generated in the wafer micro-pattern with optimal sensitivity.

[0504]

[0505] Second, the diamond-based NV center activation control unit (420) according to the present invention will be described.

[0506] The above diamond-based NV center activation control unit (420) is connected to the green laser generation control unit and drives the green laser generation control unit to generate a 532nm green laser in the wafer fine pattern sensing NV quantum sensor unit, thereby controlling the activation of the diamond-based NV center in the wafer fine pattern sensing NV quantum sensor unit.

[0507]

[0508] Third, a raster scanning control unit (430) according to the present invention will be described.

[0509] The raster scanning control unit (430) is connected to the XY-axis alignment unit of the wafer inspection stage module and drives the XY-axis alignment unit to control the wafer fine pattern sensing NV quantum sensor unit to move in a straight line along the wafer surface at regular intervals to scan one line, then move to the next line to scan.

[0510]

[0511] Fourth, the spiral scanning control unit (440) according to the present invention will be described.

[0512] The spiral scanning control unit (440) is connected to the 360-degree turn-rotating stage unit of the wafer inspection stage module and drives the 360-degree turn-rotating stage unit to control the wafer fine pattern sensing NV quantum sensor unit to scan while moving along a spiral trajectory at regular intervals from the center of the wafer surface outward.

[0513]

[0514] Fifth, the wafer fine pattern size analysis control unit (450) according to the present invention will be described.

[0515] The wafer micro-pattern size analysis control unit (450) extracts magnetic field and electric field measurement data at a specific location on the wafer surface from photon or fluorescence signals regarding spin changes of quantum dots caused by electric field and magnetic field changes in the wafer micro-pattern sensed by the wafer micro-pattern sensing NV quantum sensor unit, generates a magnetic field fluctuation model of the micro-pattern size based on this, and then controls the analysis of the wafer micro-pattern size.

[0516] First, as shown in Equation 2, magnetic and electric field measurement data at a specific location on the wafer surface are extracted from photon or fluorescence signals regarding spin changes of quantum dots due to electric and magnetic field changes generated in the wafer micro-pattern sensing NV quantum sensor unit.

[0517]

[0518]

[0519]

[0520]

[0521] Next, the wafer fine pattern size h has a relationship with the change in the magnetic field generated in the wafer fine pattern as shown in the following mathematical equation 3.

[0522]

[0523]

[0524]

[0525] Next, the wafer fine pattern size h(x,y) is derived by calculating Equation 3 in reverse as in Equation 4.

[0526]

[0527]

[0528]

[0529] The entire wafer is raster scanned or spiral scanned to calculate h(x,y) at all positions (x,y).

[0530]

[0531] At this time, the wafer fine pattern size analysis control unit generates a 3D pattern map containing the wafer fine pattern size.

[0532] Here, the wafer fine pattern size includes the thickness, width, width, length, and width of the metal wiring pattern, gate pattern, via and contact pattern, and pitch pattern.

[0533]

[0534] Fourth, the image defect analysis control unit (460) according to the present invention will be described.

[0535] The image defect analysis control unit (460) compares and analyzes image spatial information data regarding the wafer micro-pattern size and arrangement transmitted from the non-contact wafer micro-pattern NV quantum sensing module with reference image spatial information data according to the wafer micro-pattern size and arrangement that has been pre-set as a reference, and controls the automatic detection of image defects regarding the wafer micro-pattern size and arrangement.

[0536] First, calculate the image difference (ΔI(x,y)) as in mathematical formula 5.

[0537]

[0538]

[0539]

[0540] Here, I m (x,y) refers to image spatial information data regarding the size and arrangement of wafer micropatterns transmitted from a non-contact wafer micropattern NV quantum sensing module.

[0541] And, I r (x,y) refers to reference image spatial information data based on the pre-set wafer fine pattern size and arrangement.

[0542]

[0543] Next, the image difference (ΔI(x,y)) calculated in Equation 5 is checked to see if it exceeds the set threshold TI, and the presence of a defect at a specific location is determined as in Equation 6.

[0544]

[0545]

[0546]

[0547] Next, for the entire area of ​​the image data, control is established to automatically detect image defects regarding the wafer fine pattern size and arrangement as shown in Equation 7 below.

[0548]

[0549]

[0550]

[0551] Here, C image If =1, it indicates that defects regarding the wafer micropattern size and arrangement were detected in the image data.

[0552]

[0553] Seventh, the ODMR (Optical Detected Magnetic Resonance) spectrum comparison analysis control unit (470) according to the present invention will be described.

[0554] The above ODMR (Optical Detected Magnetic Resonance) spectrum comparison analysis control unit (470) compares and analyzes the currently measured ODMR (Optical Detected Magnetic Resonance) spectrum with the reference ODMR (Optical Detected Magnetic Resonance) spectrum to detect peak position shifts and spectrum changes, and controls the automatic detection of fine pattern defects due to changes in the size of the fine pattern on the wafer surface.

[0555] First, fr is defined as the peak position of the reference ODMR (Optical Detected Magnetic Resonance) spectrum and fm as the peak position of the currently measured ODMR (Optical Detected Magnetic Resonance) spectrum, and through this, the shift △f of the spectrum's peak position is expressed as in Equation 8.

[0556]

[0557]

[0558]

[0559] Next, the difference in fluorescence intensity over the entire ODMR (Optical Detected Magnetic Resonance) spectrum is calculated using the following mathematical formula 9.

[0560]

[0561]

[0562]

[0563] Here, S m (f) represents the ODMR spectrum at the measured frequency (f), and S r (f) represents the reference ODMR spectrum.

[0564]

[0565] Next, spectral change △S according to change in cumulative fluorescence intensity total It is calculated as shown in the following mathematical formula 10.

[0566]

[0567]

[0568]

[0569] Next, as shown in Equation 11, the spectral peak position shift Δf and the spectral change ΔS according to the change in fluorescence intensity total When each of the set thresholds Tf and Ts is exceeded, micropattern defects (C) due to changes in the micropattern size on the wafer surface s Controls to automatically detect ).

[0570]

[0571]

[0572] Here, T f represents the threshold for the peak position shift of the spectrum, and T s represents the threshold value for the cumulative value of the spectral change according to the change in fluorescence intensity.

[0573]

[0574] Thus, by configuring an intelligent control module comprising a height adjustment control unit for a wafer micro-pattern sensing NV quantum sensor according to the present invention, a diamond-based NV center activation control unit, a raster scanning control unit, a helical scanning control unit, a wafer micro-pattern size analysis control unit, an image defect analysis control unit, and an ODMR (Optical Detected Magnetic Resonance) spectrum comparison analysis control unit, it is possible to precisely detect minute size changes or defects through peak shifts and spectrum changes, prevent wafer damage through non-contact scanning, analyze wafer micro-pattern size, arrangement, and defect status in real time and generate automatic correction data, and improve the precision and efficiency of the defect detection algorithm by 80% compared to the existing one through data-based learning.

[0575]

[0576] Hereinafter, a control method for automatic detection of semiconductor wafer micro-pattern size and micro-pattern defects based on an NV quantum sensor according to the present invention will be described.

[0577]

[0578] FIG. 41 is a flowchart illustrating a control method for automatically detecting semiconductor wafer micro-pattern size and micro-pattern defects based on an NV quantum sensor according to the present invention.

[0579]

[0580] First, the wafer inspection head module is driven under the control of the intelligent control module, and the non-contact wafer fine pattern NV quantum sensing module is positioned while moving in the X-axis and Y-axis directions relative to the wafer inspection stage module (S10).

[0581]

[0582] Next, under the control of the intelligent control module, the wafer inspection stage module is driven to mount the wafer with the fine pattern formed thereon, and the X and Y axis positions of the wafer are aligned with respect to the non-contact wafer fine pattern NV quantum sensing module, and the wafer is rotated 360 degrees to form a position so that the surface of the wafer with the fine pattern formed thereon can be scanned non-contactually through the non-contact wafer fine pattern NV quantum sensing module (S20).

[0583]

[0584] Next, under the control of the intelligent control module, as shown in FIG. 38, a piezo actuator type fine height adjustment unit is driven to finely adjust the height of the wafer fine pattern sensing NV quantum sensor unit of the non-contact wafer fine pattern NV quantum sensing module and the wafer surface to which the size of the wafer fine pattern is to be measured to 10 to 100 μm (S30).

[0585] In the present invention, the height is finely adjusted to 50 μm.

[0586]

[0587] Next, in a non-contact wafer micro-pattern NV quantum sensing module, a photon or fluorescence signal regarding the spin change of a quantum dot due to the change in electric field and magnetic field generated in the wafer micro-pattern is sensed through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and then the photon or fluorescence signal regarding the change in electric field and magnetic field due to the sensed spin change of the quantum dot is locked in and measured to form image spatial information regarding the size of the wafer micro-pattern and the currently measured ODMR (Optical Detected Magnetic Resonance) spectrum (S40).

[0588]

[0589] That is, as illustrated in FIG. 42, a pulse waveform that controls the quantum dot qubit energy level and cross-coupling is generated and output controlled through a multi-channel pulse waveform generation control unit toward the wafer fine pattern sensing NV quantum sensor unit (S41).

[0590]

[0591] Next, through the quantum dot qubit control signal generation unit, a quantum dot qubit control signal with a frequency range within DC to 10 GHz with a spurious 1 GHz modulation bandwidth is generated toward the wafer fine pattern sensing NV quantum sensor unit, thereby controlling the quantum dot qubit, which is a component of the wafer fine pattern sensing NV quantum sensor unit (S42).

[0592]

[0593] Next, the green laser generation control unit generates a 532nm green laser to stimulate the diamond-based NV center of the wafer fine pattern sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a high energy state to generate a photon or fluorescence signal regarding the wafer fine pattern size that can be detected by the Lock In camera unit, and controls the initialization of the electron spin state (S43).

[0594]

[0595] Next, a microwave signal is sent to the wafer fine pattern sensing NV quantum sensor unit through the microwave signal generation unit to spin-switch the quantum dot qubit of the diamond-based NV center (S44).

[0596]

[0597] Next, in the wafer fine pattern sensing NV quantum sensor unit, non-contact at a height of 10 to 100 μm from the wafer surface, through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, the spin change of quantum dots according to the electric field and magnetic field change generated in the wafer fine pattern is sensed and detected as a photon or fluorescent signal (S45).

[0598]

[0599] Next, through the quartz base plate, an electrical signal is generated when a magnetic field is received on the non-contact wafer surface, and a constant frequency is maintained when there is an external temperature change or mechanical change of the wafer itself (S46).

[0600]

[0601] Next, through a half ball lens, photon or fluorescence signals regarding the wafer fine pattern sensed by the first quantum dot qubit and the second quantum dot qubit of the wafer fine pattern sensing NV quantum sensor unit are collected and transmitted to the reflector (Elliptic reflector) unit (S47).

[0602]

[0603] Next, the photon or fluorescence signal generated from the wafer fine pattern sensing NV quantum sensor unit and the photon or fluorescence signal reflected from the half ball lens are reflected back toward the optical filter unit through the reflector (Elliptic reflector) unit (S48).

[0604]

[0605] Next, the photon or fluorescence signal transmitted from the elliptic reflector unit is collected and optically filtered through the optical filter unit, and then transmitted to the lock-in camera unit (S49).

[0606]

[0607] Next, through the Lock In camera unit, the photon or fluorescence signal transmitted from the optical filter unit is Lock In measured at each pixel, and then image spatial information regarding the wafer fine pattern size and arrangement is formed based on the Lock In measured image (S49a).

[0608]

[0609] Next, the ODMR spectrum generation control unit controls the generation of the current measured ODMR spectrum based on the photon or fluorescence signal transmitted from the optical filter unit (S49b).

[0610]

[0611] Finally, through an intelligent control module, the wafer fine pattern size is analyzed and controlled, and then, first, the presence of image defects is automatically detected, and second, the fine pattern defects are automatically detected by a change in the size of the wafer fine pattern (S50).

[0612] That is, as illustrated in FIG. 43, through the wafer micro-pattern size analysis control unit, magnetic field and electric field measurement data at a specific location on the wafer surface are extracted from photon or fluorescence signals regarding spin changes of quantum dots due to electric field and magnetic field changes generated in the wafer micro-pattern detected by the wafer micro-pattern sensing NV quantum sensor unit, and based on this, a magnetic field fluctuation model of the micro-pattern size is generated, and then the wafer micro-pattern size is controlled to be analyzed (S51). FIG. 39 is an embodiment illustrating the control to analyze the wafer micro-pattern size through the wafer micro-pattern size analysis control unit according to the present invention.

[0613]

[0614] Next, through the image defect analysis control unit, image spatial information data regarding the size and arrangement of the wafer micro-pattern transmitted from the non-contact wafer micro-pattern NV quantum sensing module is compared and analyzed with reference image spatial information data according to a pre-set reference wafer micro-pattern size and arrangement, thereby controlling to automatically detect image defects regarding the size and arrangement of the wafer micro-pattern (S52). FIG. 40 is an embodiment illustrating the control to automatically detect image defects regarding the size and arrangement of the wafer micro-pattern through the image defect analysis control unit according to the present invention.

[0615]

[0616] Next, through the ODMR (Optical Detected Magnetic Resonance) spectrum comparison analysis control unit, the currently measured ODMR (Optical Detected Magnetic Resonance) spectrum and the reference ODMR (Optical Detected Magnetic Resonance) spectrum are compared and analyzed to detect peak position shifts and spectrum changes, and control is made to automatically detect fine pattern defects by changing the size of the fine pattern on the wafer surface accordingly (S53).

[0617]

[0618]

[0619] The present invention relates to an NV quantum sensor-based semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device and method comprising a wafer inspection head module (100), a non-contact wafer micro-pattern NV quantum sensing module (200), a wafer inspection stage module (300), and an intelligent control module (400), and is industrially applicable.

Claims

1. A wafer inspection head module that aligns a non-contact wafer micro-pattern NV quantum sensing module in a precise position while moving linearly along the X-axis and Y-axis directions relative to a wafer inspection stage module; A non-contact wafer micropattern NV quantum sensing module that is formed spaced apart from the wafer surface along the internal space of the wafer inspection stage module, senses photon or fluorescence signals regarding spin changes of quantum dots caused by electric and magnetic field changes generated in the wafer micropattern through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, and locks in and measures the photon or fluorescence signals regarding electric and magnetic field changes caused by the sensed spin changes of quantum dots to form image spatial information regarding the size and arrangement of the wafer micropattern and a currently measured ODMR (Optical Detected Magnetic Resonance) spectrum; A wafer inspection stage module that aligns the X and Y axis positions of a wafer with a fine pattern formed thereon based on a non-contact wafer fine pattern NV quantum sensing module, rotates the wafer 360 degrees, and positions the wafer surface with the fine pattern formed thereon so that non-contact scanning is performed through the non-contact wafer fine pattern NV quantum sensing module; An NV quantum sensor-based semiconductor wafer micropattern size and micropattern defect automatic detection control device comprising: an intelligent control module connected to a wafer inspection head module, a non-contact wafer micropattern NV quantum sensing module, and a wafer inspection stage module, which analyzes and controls the wafer micropattern size, controls to automatically detect image defects in the first stage, and controls to automatically detect micropattern defects by changes in the micropattern size on the wafer surface in the second stage.

2. In paragraph 1, the wafer inspection head module is, A module body that protects and supports each device from external pressure, and A wafer inspection head unit formed along the vertical longitudinal direction at a position spaced parallel to the above-mentioned module body, which positions a non-contact wafer micro-pattern NV quantum sensing module while moving linearly along the X-axis and Y-axis directions with respect to the wafer inspection stage module, and A linear drive unit for X-axis transfer that generates a force for linear motion of X-axis transfer moving the above wafer inspection head unit in the X-axis direction relative to the wafer inspection stage module and transmits it toward the wafer inspection head unit, and A linear drive unit for X-axis movement and a wafer inspection head unit, a linear drive unit for Y-axis movement that moves the wafer inspection stage module in the XY-axis direction, and An NV quantum sensor-based semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device comprising a piezo actuator type fine height adjustment unit located on one side of the wafer inspection head unit and finely adjusting the height of the distance between the wafer micro-pattern sensing NV quantum sensor unit of the non-contact wafer micro-pattern NV quantum sensing module and the wafer surface to 10 to 100 μm.

3. In claim 1, the non-contact wafer micro-pattern NV quantum sensing module is A lock-in camera unit located at the top of the optical filter unit, which locks in and measures photon or fluorescence signals transmitted from the optical filter unit at each pixel, and forms image spatial information regarding the wafer fine pattern size and arrangement based on the locked-in measured image; An optical filter unit located at the bottom of the lock-in camera unit, which collects photon or fluorescence signals transmitted from the reflector (Elliptic reflector) unit, optically filters them, and transmits them toward the lock-in camera unit; A reflector part positioned to surround the wafer fine pattern sensing NV quantum sensor part and the half ball lens, which reflects photon or fluorescence signals generated from the wafer fine pattern sensing NV quantum sensor part and photon or fluorescence signals reflected from the half ball lens back toward the optical filter part; A wafer fine pattern sensing NV quantum sensor unit located at the bottom of the reflector unit and spaced 10 to 100 μm from the wafer surface, which senses and detects photon or fluorescence signals regarding spin changes of quantum dots caused by changes in electric and magnetic fields generated in the wafer fine pattern through NV centers composed of nitrogen atoms and vacancy defects within the lattice structure of diamond; A quartz base plate (250) located at the bottom of the wafer micro-pattern sensing NV quantum sensor section, which generates an electrical signal when receiving a magnetic field on a non-contact wafer surface and maintains a constant frequency when there is an external temperature change or mechanical change of the wafer itself, and A half-ball lens formed to be covered by a convex lens structure along the perimeter of the upper surface of the sensor unit body, collecting photon or fluorescence signals related to a wafer fine pattern sensed by the first quantum dot qubit and the second quantum dot qubit of the wafer fine pattern sensing NV quantum sensor unit and transmitting them toward the reflector unit, A green laser generation control unit located on one side of the wafer fine pattern sensing NV quantum sensor unit, which generates a 532nm green laser to stimulate the diamond-based NV center of the wafer fine pattern sensing NV quantum sensor unit, controls the diamond-based NV center to transition to a red light energy state in the 700nm wavelength region to generate a photon or fluorescence signal regarding the wafer fine pattern size detectable by the lock-in camera unit, and controls the initialization of the electron spin state; A quantum dot qubit control signal generation unit that generates a quantum dot qubit control signal in a frequency range within DC to 10 GHz with a spurious 1 GHz modulation bandwidth toward the wafer fine pattern sensing NV quantum sensor unit to control a quantum dot qubit, which is a component of the wafer fine pattern sensing NV quantum sensor unit, and A multi-channel pulse waveform generation control unit connected to a wafer fine pattern sensing NV quantum sensor unit, which generates and outputs a pulse waveform controlling the quantum dot qubit energy level and cross-coupling toward the wafer fine pattern sensing NV quantum sensor unit, and A microwave signal generator that sends a microwave signal toward a wafer fine pattern sensing NV quantum sensor unit to control the spin switching of quantum dot qubits of a diamond-based NV center, and An NV quantum sensor-based semiconductor wafer micropattern size and micropattern defect automatic detection control device comprising an ODMR spectrum generation control unit located on one side of a lock-in camera unit and formed in a rectangular shape, which controls the generation of a currently measured ODMR spectrum based on a photon or fluorescence signal transmitted from an optical filter unit.

4. In paragraph 4, the lock-in camera part A lock-in measurement element that separates a specific signal from noise and extracts only the pure signal through synchronization with a periodic input signal, and A microlens-type light receiver formed of microlenses that detects and receives light by focusing light reaching each pixel, and A camera sensor that converts light entering through a microlens-type light receiver into an electrical signal and digitizes the image of the lock-in measurement, and An NV quantum sensor-based semiconductor wafer micropattern size and micropattern defect automatic detection control device characterized by comprising a lock-in image control unit that controls the formation of image spatial information regarding wafer micropattern size and arrangement by measuring the spatial wafer micropattern distribution based on an image of a lock-in measurement digitized through a camera sensor.

5. In paragraph 3, the wafer fine pattern sensing NV quantum sensor part A sensor main body that protects and supports each device from external pressure, and On one side of the upper surface of the diamond, a qubit metal gate unit that transmits a pulse waveform, generated from a multi-channel pulse waveform generation control unit and controlling the quantum dot (QD) energy level and cross-coupling, toward a first quantum dot qubit and a second quantum dot qubit; A microwave strip line gate located on one side of the diamond center line surface, receiving a resonant microwave pulse generated by a microwave signal generator and transmitting it toward a first quantum dot qubit and a second quantum dot qubit, and A diamond-based NV center composed of nitrogen atoms and vacancy defects is formed within the lattice structure of diamond, and neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed in the diamond-based NV center space, and a first quantum dot qubit that senses spin changes of quantum dots according to electric and magnetic field changes generated in a wafer micropattern as photon or fluorescence signals, and An NV quantum sensor-based semiconductor wafer micropattern size and micropattern defect automatic detection control device comprising a second quantum dot qubit, which is positioned on one side of a first quantum dot qubit, wherein a diamond-based NV center is formed as an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, and neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed in the diamond-based NV center space, and senses as a photon or fluorescence signal regarding the spin change of a quantum dot due to changes in electric and magnetic fields generated in a wafer micropattern.

6. In paragraph 5, the first quantum dot qubit is A first quantum dot having a structure in which an electron has quantized energy in a specific energy state and spin changes in a specific form generated in a wafer fine pattern, and A first electron spin unit that controls the electron spin state to a state corresponding to 0 or 1, and senses a photon or fluorescence signal regarding the wafer fine pattern size through the superposition and quantum entanglement of the two states, and NV quantum sensor-based semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device, comprising a first quantum part that is generated as electrons escape, interacts with electrons within the first quantum dot, and forms the quantum state of the first quantum dot.

7. In paragraph 3, the quantum dot qubit control signal generating unit A double superheterodyne algorithm engine unit that up-converts the frequency of the input signal to generate a quantum dot qubit control signal in a frequency band within 10 GHz from DC, and An analog output channel section forming an analog output channel that simultaneously controls multiple quantum dot qubits, and A sequencer that determines the order of control signals and controls the signal timing between quantum dot qubits, and A low-latency signal processing chain unit that controls to minimize signal transmission delay by rapidly performing the processing and transmission of control signals, and A low-phase noise synthesizer that minimizes phase noise of a control signal to generate a high-fidelity signal, and NV quantum sensor-based semiconductor wafer fine pattern size and fine pattern defect automatic detection control device, characterized by being composed of a high-output power section that provides a powerful control signal without an external amplifier to form a short gate pulse.

8. In paragraph 1, the wafer inspection stage module A cylindrical drum-shaped stage platform that is formed in a cylindrical drum shape and supports a wafer with a fine pattern formed thereon so as not to shake due to external pressure, and A vacuum chuck located on one side of the lower part of the internal space of the central hole of the cylindrical drum-shaped stage platform, which maintains a vacuum state to fix the wafer so that it does not shake or move, and A 360-degree turn-type stage section located on one side of the bottom of the vacuum chuck, which rotates a wafer with a fine pattern formed thereon 360 degrees based on a non-contact wafer fine pattern NV quantum sensing module, and A laser point type position sensor unit located on one side of a 360-degree turn-type stage unit, which emits a laser point to sense the position so that a non-contact wafer micro-pattern NV quantum sensing module is positioned correctly on the wafer surface, and A rotation angle sensor unit positioned on one side of the upper head surface on which the wafer is placed, which senses the rotation angle of the wafer rotated through a 360-degree turn-type stage unit, and A temperature maintenance control unit that controls the temperature of the cylindrical drum-type stage platform to be maintained at a constant 25 degrees (±0.1°C error range) through a temperature stabilizer, and A vibration absorption unit that absorbs external vibrations entering toward the cylindrical drum-shaped stage platform, thereby enabling the wafer fine pattern sensing NV quantum sensor unit of the non-contact wafer fine pattern NV quantum sensing module to scan stably, and An NV quantum sensor-based semiconductor wafer micropattern size and micropattern defect automatic detection control device, characterized by being composed of an XY-axis alignment transfer guide that aligns the X and Y-axis positions of a wafer mounted on the upper head portion of a cylindrical drum-type stage platform based on a non-contact wafer micropattern NV quantum sensing module.

9. In paragraph 1, the intelligent control module A height control unit for a wafer fine pattern sensing NV quantum sensor, which is connected to a piezo actuator type fine height control unit and drives the piezo actuator type fine height control unit to control the height of the wafer fine pattern sensing NV quantum sensor unit of a non-contact wafer fine pattern NV quantum sensing module and the wafer surface to be measured for measuring the size of the wafer fine pattern to be finely adjusted to 10 to 100 μm; A diamond-based NV center activation control unit connected to a green laser generation control unit, which drives the green laser generation control unit to generate a 532nm green laser in a wafer fine pattern sensing NV quantum sensor unit and controls the activation of a diamond-based NV center in the wafer fine pattern sensing NV quantum sensor unit, and A raster scanning control unit connected to the XY-axis alignment unit of a wafer inspection stage module, which drives the XY-axis alignment unit to control the wafer fine pattern sensing NV quantum sensor unit to move linearly along the wafer surface at regular intervals to scan one line, and then move to the next line to scan; A spiral scanning control unit connected to a 360-degree turn-rotating stage part of a wafer inspection stage module, which controls a wafer fine pattern sensing NV quantum sensor part to scan while moving outward along a spiral trajectory at regular intervals starting from the center of the wafer surface; A wafer micropattern size analysis control unit that extracts magnetic and electric field measurement data at a specific location on the wafer surface from photon or fluorescence signals regarding spin changes of quantum dots due to electric and magnetic field changes generated in the wafer micropattern sensed by the wafer micropattern sensing NV quantum sensor unit, generates a magnetic field fluctuation model of the micropattern size based thereon, and controls the analysis of the wafer micropattern size; An image defect analysis control unit that controls the automatic detection of image defects regarding the wafer micropattern size and arrangement by comparing and analyzing image spatial information data regarding the wafer micropattern size and arrangement transmitted from a non-contact wafer micropattern NV quantum sensing module with reference image spatial information data based on a preset reference wafer micropattern size and arrangement, and An NV quantum sensor-based semiconductor wafer fine pattern size and fine pattern defect automatic detection control device characterized by comprising an ODMR spectrum comparison analysis control unit that compares and analyzes a currently measured ODMR (Optical Detected Magnetic Resonance) spectrum with a reference ODMR spectrum to detect peak position shifts and spectral changes, and controls the automatic detection of fine pattern defects based on changes in the fine pattern size of the wafer surface.

10. A step in which a wafer inspection head module is driven under the control of an intelligent control module to position a non-contact wafer micro-pattern NV quantum sensing module while moving linearly along the X-axis and Y-axis directions relative to a wafer inspection stage module, and A step of driving a wafer inspection stage module under the control of an intelligent control module, mounting a wafer with a fine pattern, aligning the X and Y axis positions of the wafer with respect to a non-contact wafer fine pattern NV quantum sensing module, rotating the wafer 360 degrees to form a position so that the surface of the wafer with the fine pattern is scanned non-contactually through the non-contact wafer fine pattern NV quantum sensing module, and A step of driving a piezo actuator-type fine height adjustment unit under the control of an intelligent control module to finely adjust the height of the distance between the wafer fine pattern sensing NV quantum sensor unit of the non-contact wafer fine pattern NV quantum sensing module and the wafer surface to which the size of the wafer fine pattern is to be measured to 10 to 100 μm, and A step of sensing, through a non-contact wafer micropattern NV quantum sensing module, photon or fluorescence signals regarding spin changes of quantum dots due to electric and magnetic field changes generated in the wafer micropattern through NV centers composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and then locking in and measuring the photon or fluorescence signals regarding electric and magnetic field changes due to the sensed spin changes of quantum dots to form image spatial information regarding the wafer micropattern size and a currently measured ODMR spectrum; A method for automatically detecting semiconductor wafer micropattern size and micropattern defects based on an NV quantum sensor, characterized by comprising the steps of analyzing and controlling the wafer micropattern size through an intelligent control module, first, controlling to automatically detect image defects, and second, controlling to automatically detect micropattern defects based on changes in the micropattern size of the wafer surface.

11. In Clause 10, the above step A step of generating and outputting a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the wafer fine pattern sensing NV quantum sensor unit through a multi-channel pulse waveform generation control unit, and A step of controlling a quantum dot qubit, which is a component of the wafer fine pattern sensing NV quantum sensor unit, by generating a quantum dot qubit control signal with a frequency range within DC to 10 GHz with a spurious 1 GHz modulation bandwidth toward the wafer fine pattern sensing NV quantum sensor unit through a quantum dot qubit control signal generation unit, and A step of controlling, in a green laser generation control unit, to generate a 532nm green laser to stimulate a diamond-based NV center of a wafer fine pattern sensing NV quantum sensor unit, thereby controlling the diamond-based NV center to transition to a red light energy state in the 700nm wavelength region to generate a photon or fluorescence signal regarding the wafer fine pattern size detectable by a lock-in camera unit, and controlling to initialize the electron spin state; A step of sending a microwave signal toward a wafer fine pattern sensing NV quantum sensor unit through a microwave signal generator to spin-switch a quantum dot qubit of a diamond-based NV center, and A step of detecting, in a wafer fine pattern sensing NV quantum sensor unit, by sensing a photon or fluorescence signal regarding a spin change of a quantum dot according to an electric field or magnetic field change generated in the wafer fine pattern through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, while non-contacting at a height of 10 to 100 μm from the wafer surface; and A step of generating an electrical signal when receiving a magnetic field through a quartz base plate to a non-contact wafer surface, and maintaining a constant frequency in the event of external temperature changes or mechanical changes of the wafer itself, and A step of collecting photon or fluorescence signals regarding a wafer micropattern sensed by the first quantum dot qubit and the second quantum dot qubit of the wafer micropattern sensing NV quantum sensor unit through a half ball lens and transmitting them toward the reflector unit, and A step of reflecting the photon or fluorescence signal generated from the wafer fine pattern sensing NV quantum sensor unit and the photon or fluorescence signal reflected from the half ball lens back toward the optical filter unit through the reflector unit, and A step of collecting photon or fluorescence signals transmitted from a reflector unit through an optical filter unit, optically filtering them, and then transmitting them to a lock-in camera unit; A step of forming image spatial information regarding the wafer fine pattern size and arrangement based on the locked-in image, after locking in a photon or fluorescence signal transmitted from an optical filter unit at each pixel through a lock-in camera, and A method for automatically detecting semiconductor wafer micropattern size and micropattern defects based on an NV quantum sensor, characterized by including a step of controlling the generation of a currently measured ODMR spectrum based on a photon or fluorescence signal transmitted from an optical filter unit through an ODMR spectrum generation control unit.

12. In Clause 10, the above step A step of extracting magnetic and electric field measurement data at a specific location on the wafer surface from photon or fluorescence signals regarding spin changes of quantum dots due to electric and magnetic field changes generated in the wafer micropattern sensing NV quantum sensor unit through a wafer micropattern size analysis control unit, generating a magnetic field fluctuation model of the micropattern size based thereon, and then controlling the analysis of the wafer micropattern size; A step of controlling to automatically detect image defects regarding the size and arrangement of wafer micro-patterns by comparing and analyzing image spatial information data regarding the size and arrangement of wafer micro-patterns transmitted from a non-contact wafer micro-pattern NV quantum sensing module with reference image spatial information data based on a preset standard size and arrangement of wafer micro-patterns through an image defect analysis control unit; A method for automatically detecting micropattern size and micropattern defects in a semiconductor wafer based on an NV quantum sensor, characterized by including a step of comparing and analyzing a currently measured ODMR spectrum with a reference ODMR spectrum through an ODMR spectrum comparison analysis control unit to detect peak position shifts and spectrum changes, and controlling to automatically detect micropattern defects based on changes in micropattern size on the wafer surface accordingly.

13. A wafer inspection head module that aligns a non-contact wafer micro-pattern NV quantum sensing module in a precise position while moving linearly along the X-axis and Y-axis directions relative to a wafer inspection stage module; A non-contact wafer micropattern NV quantum sensing module formed spaced apart from the wafer surface along the internal space of the wafer inspection stage module, detecting changes in quantum states due to changes in an external electric or magnetic field as optical signals, and analyzing them to form image space information regarding the wafer micropattern size and arrangement and a currently measured ODMR (Optical Detected Magnetic Resonance) spectrum; A wafer inspection stage module that aligns the X and Y axis positions of a wafer with a fine pattern formed thereon based on a non-contact wafer fine pattern NV quantum sensing module, rotates and moves the wafer to position the wafer surface with the fine pattern formed thereon so that it can be scanned non-contactually through the non-contact wafer fine pattern NV quantum sensing module; An NV quantum sensor-based semiconductor wafer micro-pattern size and micro-pattern defect automatic detection control device characterized by including an intelligent control module that analyzes and controls the wafer micro-pattern size, controls to automatically detect image defects in the first stage, and controls to automatically detect micro-pattern defects by changes in the micro-pattern size of the wafer surface in the second stage.

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