Semiconductor laser chip and semiconductor laser arrangement

Abstract

The invention relates to a semiconductor laser chip (1) comprising a semiconductor body having a semiconductor layer sequence (2) which has an active region (20) provided for generating radiation, wherein the semiconductor body has a resonator region (3) having the active region (20) and has a diode region (4) spaced apart from the resonator region (3), wherein the active region (20) of the resonator region (3) and the diode region (4) are connected antiparallel to one another with respect to their conducting direction. The invention further relates to a semiconductor laser arrangement (10) having a semiconductor laser chip (1).

Description

[0001] 2024PF01352 27 . November 2025

[0002] P2024 , 1033 WO N

[0003] - 1 -

[0004] Description

[0005] Semiconductor laser chip and semiconductor laser assembly

[0006] The present application relates to a semiconductor laser chip and a semiconductor laser arrangement.

[0007] Semiconductor lasers can generate radiation efficiently and with high luminance. Furthermore, very short pulse lengths can be generated in pulsed operation due to the high-frequency modulation capability of semiconductor lasers.

[0008] One task is to specify a semiconductor laser chip with improved properties.

[0009] This problem is solved, among other things, by a semiconductor laser chip with the features of claim 1 and a semiconductor laser arrangement comprising such a semiconductor laser chip. Further embodiments and advantages are the subject of the dependent claims.

[0010] A semiconductor laser chip is specified. During manufacturing, the semiconductor laser chip can be produced from a processed semiconductor wafer through a singulation process.

[0011] According to at least one embodiment of the semiconductor laser chip, the semiconductor laser chip comprises a semiconductor body with a sequence of semiconductor layers that includes an active region intended for generating radiation. For example, the active region is between a first semiconductor layer of a first 2024PF01352 27 November 2025

[0012] P2024 , 1033 WO N

[0013] - 2 -

[0014] The semiconductor body consists of a first conductor layer and a second semiconductor layer of a different conductor type, such that the active region is located in a pn junction. The active region and / or the first semiconductor layer and / or the second semiconductor layer can be multilayered. For example, the semiconductor body with the semiconductor layer sequence is based on a II-IV compound semiconductor material.

[0015] II IV compound semiconductor materials are used for radiation generation in the ultraviolet (Al x In y Gai- x-y N) over the visible (Al x In y Gai- X-y N, especially for blue to green radiation, or Al x In y Gai- X-y P, especially for yellow to red radiation) up to the infrared (Al x In y Gai- X-yThe spectral range is particularly suitable. Here, 0 < x < 1, 0 < y < 1 and x + y < 1 apply, especially with x = 1, 1, x = 0 and / or y = 0. High internal quantum efficiencies can also be achieved in radiation generation with II-IV compound semiconductor materials, especially from the aforementioned material systems.

[0016] The semiconductor body with its sequence of semiconductor layers is, for example, arranged on a support. The support can be, for example, a growth substrate for the semiconductor layer sequence of the semiconductor body or a support different from the growth substrate.

[0017] For example, the first semiconductor layer is located closer to the substrate than the second semiconductor layer, or vice versa. 2024PF01352 November 27, 2025

[0018] P2024 , 1033 WO N

[0019] - 3 -

[0020] According to at least one embodiment of the semiconductor laser chip, the semiconductor body comprises a resonator region with an active region. During operation of the semiconductor laser chip, the radiation generated in the active region oscillates in a resonator of the resonator region, producing coherent radiation through stimulated emission. The radiation can propagate parallel or perpendicular to a principal plane of extension of the active region.

[0021] According to at least one embodiment of the semiconductor laser chip, the semiconductor body has a diode region spaced apart from the resonator region. In particular, the resonator region and the diode region can be arranged next to each other in a top view of the semiconductor laser chip. The resonator region and the diode region can be formed from the same sequence of semiconductor layers during the manufacturing of the semiconductor chip. Thus, the individual semiconductor layers in the resonator region do not differ from the corresponding layers in the diode region, apart from manufacturing-related variations.

[0022] In particular, the diode region can be formed by semiconductor layers that are already intended for the formation of the resonator region. Therefore, no additional semiconductor layers are required for the formation of the diode region.

[0023] Unlike the resonator region, the diode region of the semiconductor laser chip is not intended for radiation generation during operation. In particular, the diode region does not contain a resonator. 2024PF01352 November 27, 2025

[0024] P2024 , 1033 WO N

[0025] 4

[0026] According to at least one embodiment of the semiconductor laser chip, the active region of the diode section and the diode section are connected antiparallel to each other with respect to their forward direction. When the semiconductor laser chip is operated in the forward direction of the active region, charge carriers from opposite sides are injected into the active region of the resonator section and can recombine there, emitting radiation. The diode section is, meanwhile, oriented in reverse bias, so that no, or at least no significant, current flows through the diode section.

[0027] However, a current flow in the opposite direction, i.e., in the reverse direction of the active area of ​​the resonator region, can occur via the diode region, since the diode region is forward-biased for this direction of current.

[0028] In at least one embodiment of the semiconductor laser chip, the semiconductor laser chip comprises a semiconductor body with a sequence of semiconductor layers that includes an active region for generating radiation, wherein the semiconductor body has a resonator region comprising the active region and a diode region spaced apart from the resonator region. The active region of the resonator region and the diode region are connected antiparallel to each other with respect to their on-state.

[0029] The semiconductor laser chip therefore has a diode region integrated into the semiconductor body with the semiconductor layer sequence. During the manufacturing of the semiconductor laser chip, the diode region is thus already present at the 2024PF01352 27. November 2025

[0030] P2024 , 1033 WO N

[0031] - 5 -

[0032] Isolated wafers are present in the semiconductor laser chips.

[0033] It has been shown that the energy consumption of such a semiconductor laser can be reduced and improved pulse characteristics achieved in pulsed operation. In particular, current flows occurring in reverse between pulses, relative to the forward direction of the active region in the resonator area, can be diverted via the diode region. By integrating this diode function into the semiconductor body of the semiconductor laser chip, particularly short conductor lengths can be achieved for these current flows.

[0034] In particular, compared to an arrangement where a conventional semiconductor laser chip is connected antiparallel to an external diode, the reduced conductor lengths can lead to energy savings and / or better pulse characteristics.

[0035] Furthermore, the diode area can provide integrated protection against electrostatic discharge (ESD) within the semiconductor laser chip, so that ESD protection is already present during the assembly of the semiconductor laser chip.

[0036] According to at least one embodiment of the semiconductor laser chip, the semiconductor laser chip has a first trench structure that separates the active area of ​​the resonator area from the diode area.

[0037] The first trench structure therefore cuts through at least the semiconductor material arranged on the active area, for example the second semiconductor layer, and the active 2024PF01352 27 November 2025

[0038] P2024 , 1033 WO N

[0039] - 6 -

[0040] Area. For example, the first trench structure ends in the first semiconductor layer, so that the first semiconductor layer in a bottom region of the first trench structure can be electrically contacted via a contact layer.

[0041] According to at least one embodiment of the semiconductor laser chip, the resonator region and the diode region are completely separate subregions of the semiconductor body with the semiconductor layer sequence. Therefore, there is no direct current path within the semiconductor body from the resonator region to the diode region.

[0042] An electrical connection between the resonator area and the diode area can be achieved by means of at least one contact layer applied to the semiconductor body.

[0043] For example, the contact layer contains a metal or an electrically conductive oxide (transparent conductive oxide, TCO) material such as indium tin oxide (ITO) or zinc oxide (ZnO). The contact layer can be single-layered or multi-layered.

[0044] According to at least one embodiment of the semiconductor laser chip, the semiconductor laser chip has a second trench structure. In particular, the second trench structure can extend completely through the semiconductor body with its sequence of semiconductor layers, either on its own or together with the first trench structure.

[0045] For example, the second trench structure is located in a bottom region of the first trench structure. The second trench structure, together with the first trench structure, can therefore completely separate the semiconductor material of the resonator region from the semiconductor material of the diode region. 2024PF01352 27 November 2025

[0046] P2024 , 1033 WO N

[0047] - 7 - separate . In this case, there is no direct current path within the semiconductor body between the resonator region and the diode region .

[0048] According to at least one embodiment of the semiconductor laser chip, the diode section forms a Schottky diode. In a Schottky diode, the rectifying effect is achieved through a metal-semiconductor contact. The semiconductor material adjacent to the metal contact can be n-type or p-type. A Schottky diode is characterized by particularly short switching times. For example, the Schottky diode only utilizes the first semiconductor layer of the semiconductor body with its semiconductor layer sequence. In particular, the active region is not required for achieving a rectifying effect when the diode section is designed as a Schottky diode.

[0049] According to at least one embodiment of the semiconductor laser chip, the first semiconductor layer of the resonator region is electrically connected to the first semiconductor layer of the diode region, and the second semiconductor layer of the resonator region is electrically connected to a metal contact of the diode region. For example, the first semiconductor layer is n-type, and the metal contact of the diode region borders n-type material of the first semiconductor layer of the diode region.

[0050] According to at least one embodiment of the semiconductor laser chip, the semiconductor body has a recess in the diode region that extends through the second semiconductor layer and the active region, with the metal contact penetrating the first semiconductor layer in the 2024PF01352 27 November 2025

[0051] P2024 , 1033 WO N

[0052] 8

[0053] The recess is electrically contacted. In particular, the metal contact in the recess is directly adjacent to the first semiconductor layer.

[0054] According to at least one embodiment of the semiconductor laser chip, the first semiconductor layer of the resonator region is electrically connected to the second semiconductor layer of the diode region, and vice versa. Therefore, current flows occurring backwards with respect to the forward direction of the active region in the resonator region can be dissipated via the active region of the diode region.

[0055] According to at least one embodiment of the semiconductor laser chip, the semiconductor body with the semiconductor layer sequence is arranged on a substrate, where the substrate is a growth medium for the semiconductor layer sequence. The growth medium used for the epitaxial deposition of the semiconductor layer sequence of the semiconductor body thus remains within the semiconductor laser chip.

[0056] In contrast, the carrier can also be a carrier different from the growth substrate, which is connected to the semiconductor layer sequence during the production of the semiconductor laser chip before singulation from the wafer assembly, for example via a wafer bonding process.

[0057] According to at least one embodiment of the semiconductor laser chip, the semiconductor laser chip is designated as a 2024PF01352 27. November 2025

[0058] P2024 , 1033 WO N

[0059] - 9 - edge-emitting semiconductor laser formed. The resonator surfaces of the resonator region are thus oriented perpendicular to a principal extension plane of the active region.

[0060] According to at least one embodiment of the semiconductor laser chip, the semiconductor laser chip is designed as a surface-emitting semiconductor laser. In this case, the resonator surfaces of the resonator region are oriented parallel to the principal extension plane of the active region.

[0061] For example, the surface-emitting semiconductor laser is designed as a vertical cavity surface-emitting semiconductor laser (VCSEL) or as a vertical external cavity surface-emitting semiconductor laser (VECSEL).

[0062] Furthermore, a semiconductor laser arrangement with a semiconductor laser chip described above is specified.

[0063] According to at least one embodiment of the semiconductor laser arrangement, the semiconductor laser arrangement includes a drive circuit for pulsed operation of the semiconductor laser chip. For example, a switch such as a transistor can be set to an electrically conductive state for pulse generation, so that short optical pulses are emitted.

[0064] According to at least one embodiment of the semiconductor laser arrangement, the pulse length of the emitted radiation is at most 20 ns or at most 10 ns. 2024PF01352 27 November 2025

[0065] P2024 , 1033 WO N

[0066] 10 ns or at most 5 ns or at most 3 ns. For example, the pulse length is between inclusive 10 ns and inclusive 20 ns. Alternatively, the pulse length can be between inclusive 1 ns and inclusive 10 ns, for example, between inclusive 2 ns and inclusive 5 ns.

[0067] Semiconductor lasers with such short pulse lengths are particularly suitable for LIDAR (Light Detection and Ranging) applications, for example.

[0068] According to at least one embodiment of the semiconductor laser arrangement, charge carriers flow across the diode region between successive pulses during operation. These charge carriers, which flow backwards relative to the forward direction of the active region of the resonator, can thus be effectively discharged before the next optical pulse is emitted.

[0069] This current flow can occur within the semiconductor laser chip. It has been shown that the energy efficiency of radiation generation and the properties of the optical pulses can be improved compared to a semiconductor laser arrangement where an external diode is connected antiparallel to a semiconductor laser chip.

[0070] Features listed in connection with at least one embodiment of the semiconductor laser chip or semiconductor laser assembly may be combined with features listed in connection with another embodiment of the semiconductor laser assembly or semiconductor laser chip. 2024PF01352 27 November 2025

[0071] P2024 , 1033 WO N

[0072] - 11 - described, can be combined as long as these features do not exclude each other.

[0073] Further advantages and features will become apparent from the following description of the exemplary designs in conjunction with the figures.

[0074] Figures 1A to IC show an exemplary embodiment of a semiconductor laser chip in perspective view (Figure 1A), in a sectional view along the line BB' shown in Figure 1A (Figure 1B) and in another sectional view along the line CC' shown in Figure 1A (Figure IC); Figures 2A and 2B show an exemplary embodiment of a semiconductor laser chip in two sectional views;

[0075] Figure 2C shows a circuit diagram for the embodiment of Figures 2A and 2B;

[0076] Figure 3A is an exemplary embodiment of a semiconductor laser arrangement; and Figures 3B and 3C are each schematic representations of current waveforms in different operating phases of a semiconductor laser arrangement of Figure 3A.

[0077] The figures are schematic representations and therefore not necessarily to scale. Individual elements and especially layer thicknesses may be altered for improved [2024PF01352 27 November 2025].

[0078] P2024 , 1033 WO N

[0079] - 12 -

[0080] To improve representation or to make understanding easier, the drawing may be exaggeratedly large.

[0081] The exemplary embodiment of a semiconductor laser chip 1, shown schematically in perspective in Figure 1A, comprises a semiconductor body with a sequence of semiconductor layers 2 and an active region 20 for generating radiation. The semiconductor body with the sequence of semiconductor layers 2 has a resonator region 3 with the active region 20 and a diode region 4 spaced apart from the resonator region 3. The active region 20 of the resonator region and the diode region 4 are connected antiparallel to each other with respect to their forward direction.

[0082] The semiconductor body with the semiconductor layer sequence 2 has a first semiconductor layer 21 of a first conduction type and a second semiconductor layer 22 of a second conduction type different from the first conduction type, wherein the active region 20 is arranged between the first semiconductor layer 21 and the second semiconductor layer 22. For example, the first semiconductor layer 21 is n-type and the second semiconductor layer 22 is p-type, or vice versa.

[0083] In the embodiment shown in Figures 1A to IC, the semiconductor laser chip 1 is designed as an edge-emitting semiconductor laser. An emission region 29, from which the coherent radiation generated during operation emerges, is located on a side surface of the resonator region 3, which is perpendicular to a principal extension plane of the active region 20. 2024PF01352 November 27, 2025

[0084] P2024 , 1033 WO N

[0085] - 13 -

[0086] The semiconductor body with the semiconductor layer sequence 2 has a first trench structure 51 that separates the active region 20 of the resonator region 3 from the active region 20 of the diode region 4. The first trench structure 51 extends through the second semiconductor layer 22 and the active region 20 into the first semiconductor layer 21. A bottom region 510 of the first trench structure 51 is formed by material of the first semiconductor layer 21.

[0087] Furthermore, the semiconductor body 2 comprises a second trench structure 52. The second trench structure 52 completely cleaves the semiconductor layer sequence 2. For example, the second trench structure 52 extends into a support 6 of the semiconductor laser chip 1. In the illustrated embodiment, the support 6 is a growth substrate for the epitaxial deposition of the semiconductor layer sequence 2.

[0088] As shown in Figure IC, the first semiconductor layer 21 in the resonator region 3 is electrically connected to the second semiconductor layer 22 of the diode region 4 via a first contact layer 71.

[0089] The second semiconductor layer 22 is electrically connected to the first semiconductor layer 21 in the diode region 4 via a second contact layer 72, as shown in Figure 1B.

[0090] The first contact layer 71 and / or the second contact layer 72 can be metallic or comprise a TCO material. The first contact layer 71 and the second contact layer 72 can be formed in a common deposition process during manufacturing. 2024PF01352 November 27, 2025

[0091] P2024 , 1033 WO N

[0092] - 14 -

[0093] To prevent electrical short circuits, insulation layers 8 are arranged between the first contact layer 71 and the semiconductor body 2, and between the second contact layer 72 and the semiconductor body 2. The first contact layer 71 borders the first semiconductor layer 21 of the resonator region 3 in a first opening 81 of the insulation layer 8 in the bottom region 510 of the first trench structure 51. The second contact layer 72 borders the first semiconductor layer 21 of the diode region 4 in a second opening 82 of the insulation layer 8.

[0094] In the illustrated embodiment, the carrier 6 is electrically insulating or nominally undoped, so that the carrier 6 does not represent a current path, or at least not a significant one, between the first semiconductor layer 21 of the resonator region 3 and the first semiconductor layer 21 of the diode region 4.

[0095] In the semiconductor laser chip 1, different, laterally spaced regions of the semiconductor body with the semiconductor layer sequence 2 are used for the generation of coherent radiation on the one hand and for the creation of an antiparallel diode, not intended for radiation generation, on the other. Thus, the semiconductor laser chip 1 has an integrated antiparallel diode.

[0096] Charge carrier currents flowing in the reverse direction of the active region 20 of the resonator region 3 can flow away via the diode region 4. This is explained in more detail in connection with Figures 3A to 3G. 2024PF01352 27 November 2025

[0097] P2024 , 1033 WO N

[0098] - 15 -

[0099] Furthermore, protection against electrostatic discharge can be integrated into the semiconductor laser chip 1 via the diode area 4. In particular, this protection can be provided even before the semiconductor chip 1 is separated from a semiconductor wafer assembly during its manufacturing process.

[0100] In contrast to the representation shown, the semiconductor laser chip 1 can also be designed as a surface-emitting semiconductor laser.

[0101] In this case, the emission region 29, from which the coherent radiation generated during operation emerges, runs parallel to the principal extent plane of the active region 20. For example, the second semiconductor layer 22 can form the radiation emission surface for the coherent radiation to be generated.

[0102] For example, an arsenide compound semiconductor material such as Al is suitable for generating radiation in the infrared spectral range. x In y Gai- x-y As with 0 < x < 1 , 0 < y < 1 and x + y < 1 .

[0103] However, the described setup is also suitable for other semiconductor materials for generating radiation in other spectral ranges, for example for phosphide compound semiconductor materials such as Al x In y Gai- X-y P or for nitride compound semiconductor material such as

[0104] Al x In y Gai- x-y N, each with 0 < x < 1 , 0 < y < 1 and x + y < 1 .

[0105] The embodiment shown in Figures 2A and 2B corresponds essentially to that described in connection with 2024PF01352, dated November 27, 2025.

[0106] P2024 , 1033 WO N

[0107] 16

[0108] Figures 1A to IC describe the exemplary embodiment. In contrast, the diode region 4 is designed as a Schottky diode 41. For this purpose, a metal contact 45 is provided in the diode region 4. The metal contact 45 borders the first semiconductor layer 21, wherein the first semiconductor layer in the illustrated embodiment is an n-type semiconductor layer.

[0109] As schematically shown in Figure 2A, the metal contact 45 in the diode region 4 is arranged in a recess 25 of the semiconductor body 2. The recess 25 extends through the second semiconductor layer 22 and the active region 20, so that the metal contact 45 in the region of the recess 25 borders the first semiconductor layer 21.

[0110] The active region 20 of the diode region 4 is therefore not required to achieve the rectifying effect of the diode region 4. Again, the active region 20 of the resonator region 3 and the Schottky diode 41 are connected antiparallel to each other with respect to their forward direction by means of the first contact layer 71 and the second contact layer 72. This is illustrated in Figure 20 using a circuit diagram of the semiconductor laser chip 1.

[0111] In the sectional view shown in Figure 2A, the second semiconductor layer 22 of the resonator area 3 is electrically connected to the first semiconductor layer 21 of the diode area 4 via the second contact layer 72.

[0112] The first semiconductor layer 21 of the resonator area 3 is, as shown in Figure 2B, connected via the first contact layer 71 with 2024PF01352 27 November 2025

[0113] P2024 , 1033 WO N

[0114] - 17 - electrically connected to the metal contact 45 of the diode area 4.

[0115] Figure 3A schematically depicts a semiconductor laser arrangement 10 with a semiconductor laser chip 1, wherein the semiconductor laser chip 1 can be configured as described in connection with the preceding exemplary embodiments. In particular, the representation of a circuit symbol of a Schottky diode for the diode region 4 does not restrict the diode region 4 to a Schottky diode.

[0116] Rather, the diode area 4 can also be configured as a pn diode or pin diode, as described in connection with Figures 1A to IC.

[0117] The semiconductor laser arrangement 10 comprises the semiconductor laser chip 1 and a control circuit 11 .

[0118] The control circuit 11 comprises a resistor 92, a capacitor 93 and a switch 94. A power supply 91 is also shown.

[0119] The semiconductor laser chip 1 is connected to the capacitor 93 via the switch 94. By switching the switch 94 into the conducting state, charge carriers can be diverted from the capacitor 93 via the active region 20 of the resonator region 3 and emitted there by emitting radiation.

[0120] This current path of a pulse phase 99 is illustrated by arrows in Figure 3C. The semiconductor laser chip 1 2024PF01352 was manufactured on November 27, 2025.

[0121] P2024 , 1033 WO N

[0122] - 18 - The integrated diode is in reverse bias and therefore makes no significant contribution to the current flow.

[0123] Current waveforms between successive pulses are shown schematically in Figure 3B.

[0124] A charging current 981 of the capacitor 93 is illustrated by arrows. Further arrows represent a residual charging current 982. Here, charge carrier currents that flow backwards, i.e., in the reverse direction, relative to the forward direction of the active region 20 of the resonator region 3, can flow via the diode region 4. This current flow can occur within the semiconductor laser chip 1, thus enabling particularly short current paths.

[0125] Compared to conventional solutions where a semiconductor laser chip and a separate external diode are connected antiparallel to each other, energy savings can be achieved, particularly due to the reduced cable lengths. Such an external diode, mounted close to the semiconductor laser chip, is therefore no longer required. This allows the overall design of the semiconductor laser assembly 10 to be particularly compact.

[0126] Furthermore, it has been shown that the quality of the optical pulses generated during operation can also be improved by integrating the diode area 4 into the semiconductor laser chip 1.

[0127] By designing diode section 4 as a Schottky diode 41, particularly short switching times can be achieved, which is further beneficial for the aforementioned effects. 2024PF01352 November 27, 2025

[0128] P2024 , 1033 WO N

[0129] - 19 - However, a positive effect is also achieved if the diode area 4, as described in connection with Figures 1A to IC, is not designed as a Schottky diode.

[0130] The described semiconductor laser chip 1 and the described semiconductor laser arrangement 10 are particularly suitable for generating short pulses, for example with an optical pulse length of at most 10 ns or at most 5 ns, for example between 1 ns and 5 ns including inclusive, or between 1 ns and 2 ns including inclusive. However, longer optical pulse lengths can also be used, for example optical pulse lengths between 10 ns and 20 ns including inclusive.

[0131] Such semiconductor laser chips or semiconductor laser arrays are particularly suitable for LIDAR applications, for example.

[0132] In principle, the described integration of a diode area into a semiconductor laser chip can also be used in semiconductor lasers in other spectral ranges or for other applications.

[0133] This patent application claims priority over German patent application 10 2024 137 461 . 6, the disclosure content of which is hereby incorporated by reference.

[0134] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the patent claims, even if this feature is 2024PF01352 November 27, 2025

[0135] P2024, 1033 WO N

[0136] - 20 - or this combination itself is not explicitly specified in the patent claims or the embodiments.

[0137] 2024PF01352 27 . November 2025

[0138] P2024 , 1033 WO N

[0139] 21

[0140] Reference character list

[0141] 1 semiconductor laser chip

[0142] 10 Semiconductor laser arrangement

[0143] 11 Control circuit

[0144] 2 semiconductor bodies with semiconductor layer sequence

[0145] 20 active area

[0146] 21 first semiconductor layer

[0147] 22 second semiconductor layer

[0148] 25 Exclusion

[0149] 29 Emission range

[0150] 3 Resonator area

[0151] 4 diode range

[0152] 41 Schottky diode

[0153] 45 Metal contact

[0154] 51 first trench structure

[0155] 510 floor area

[0156] 52 second trench structure

[0157] 6 carriers

[0158] 71 first contact layer

[0159] 72 second contact layer

[0160] 8 I isolation layer

[0161] 81 first opening

[0162] 82 second opening

[0163] 91 Source of supply

[0164] 92 resistance

[0165] 93 Capacitor

[0166] 94 switches

[0167] 981 charging current

[0168] 982 residual charging current

[0169] 99 Current path in pulse phase

Claims

2024PF01352 November 27, 2025 P2024, 1033 WO N - 22 - Patent claims 1. Semiconductor laser chip (1) comprising a semiconductor body with a sequence of semiconductor layers (2) having an active region (20) for generating radiation, wherein - the semiconductor body has a resonator region (3) with the active region (20) and a diode region (4) spaced apart from the resonator region (3), wherein the active region (20) of the resonator region (3) and the diode region (4) are connected antiparallel to each other with respect to their forward direction; - the resonator region (3) and the diode region (4) are completely separate sub-regions of the semiconductor body with the semiconductor layer sequence (2); - the semiconductor layer sequence comprises a first semiconductor layer (21) of a first conduction type and a second semiconductor layer (22) of a second conduction type different from the first conduction type, wherein the active region (20) is arranged between the first semiconductor layer (21) and the second semiconductor layer (22); - the diode area (4) forms a Schottky diode (41); and - the second semiconductor layer (22) of the resonator region (3) is electrically connected to the first semiconductor layer (21) of the diode region (4) and wherein the first semiconductor layer (21) of the resonator region (3) is electrically connected to a metal contact (45) of the diode region (4).

2. Semiconductor laser chip according to claim 1, wherein the semiconductor laser chip (1) has a first trench structure (51) which defines the active region (20) of the separates the resonator area (3) from the diode area (4). 2024PF01352 November 27, 2025 P2024, 1033 WO N 23 3. Semiconductor laser chip according to claim 1 or 2, wherein a second trench structure (52) is arranged in a bottom region (510) of the first trench structure (51), which extends completely through the semiconductor body with the semiconductor layer sequence (2).

4. Semiconductor laser chip according to one of the preceding claims, wherein the semiconductor body in the diode region (4) has a recess (25) extending through the second semiconductor layer (22) and the active region (20), wherein the metal contact (45) electrically contacts the first semiconductor layer (21) in the recess.

5. Semiconductor laser chip according to one of the preceding claims, wherein the semiconductor body comprises the semiconductor layer sequence (2) is arranged on a support (6), wherein the support is a growth substrate for the semiconductor layer sequence.

6. Semiconductor laser chip according to one of the preceding claims, wherein the semiconductor laser chip (1) is configured as an edge-emitting semiconductor laser.

7. Semiconductor laser chip according to one of claims 1 to 5, wherein the semiconductor laser chip (1) is designed as a surface-emitting semiconductor laser.

8. Semiconductor laser arrangement (10) comprising a semiconductor laser chip (1) according to one of the preceding claims and a control circuit (11) for pulsed operation of the semiconductor laser chip (1) . 2024PF01352 November 27, 2025 P2024, 1033 WO N 24 9. Semiconductor laser arrangement according to claim 8, wherein the pulse length of the emitted radiation is at most 20 ns.

10. Semiconductor laser arrangement according to claim 8 or 9, wherein, during operation of the semiconductor laser arrangement, charge carriers flow off via the diode region (4) between successive pulses.

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