Optoelectronic component

Abstract

The invention relates to an optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111), having a carrier (20) with a mounting surface (21) and having a group (30) of optoelectronic semiconductor chips (31, 32, 33) arranged laterally next to one another on the mounting surface (21). The optoelectronic semiconductor chips (31, 32, 33) are designed to emit electromagnetic radiation at luminous surfaces (34) facing away from the mounting surface (21). The optoelectronic semiconductor chips (31, 32, 33) are designed to emit electromagnetic radiation from different spectral ranges and / or having different spectral distributions. The optoelectronic semiconductor chips (31, 32, 33) are designed as mini and / or micro light-emitting diodes.

Description

[0001] 2024PF00551 1

[0002] OPTOELECTRONIC COMPONENT

[0003] DESCRIPTION

[0004] The present invention relates to an optoelectronic component.

[0005] This patent application claims priority from German patent application DE 10 2024 137 654 . 6, the disclosure content of which is hereby incorporated by reference.

[0006] Optoelectronic components with light-emitting diodes (LEDs) are known from the prior art, designed to emit red, green, and blue (RGB) light. Optoelectronic components are also known that are designed to emit white light with different color temperatures (e.g., warm white, neutral white, cool white, etc.).

[0007] Existing optoelectronic components have the disadvantage that complete color mixing does not occur within the component itself. At the light-emitting surfaces of existing optoelectronic components, all three colors are typically observable separately. Both an angle distribution of the wavelength of emitted electromagnetic radiation and a distribution of the wavelength over an area exhibit transitions between the individual colors, which can be observed and measured.

[0008] One object of the present invention is to provide an improved optoelectronic component. This object is achieved by an optoelectronic component having the features of the independent claim. Advantageous embodiments are specified in the dependent claims.

[0009] An optoelectronic component comprises a substrate with a mounting surface and a group of two optoelectronic semiconductor chips arranged laterally adjacent to the mounting surface. The optoelectronic semiconductor chips are configured to emit electromagnetic radiation from luminescent surfaces facing away from the mounting surface. The optoelectronic semiconductor chips are configured to emit electromagnetic radiation from different spectral ranges and / or exhibiting different spectral distributions. The optoelectronic semiconductor chips are configured as miniature and / or micro light-emitting diodes (LEDs).

[0010] The optoelectronic component or group of optoelectronic components can, for example, comprise three optoelectronic semiconductor chips. However, the optoelectronic component comprises at least two optoelectronic semiconductor chips. The optoelectronic semiconductor chips can also be referred to as light-emitting diodes (LEDs).

[0011] Optoelectronic semiconductor chips can be designed as surface emitters or as volume emitters. If the optoelectronic semiconductor chips are designed as surface emitters, they are configured to emit electromagnetic radiation only from the emission surfaces facing away from the mounting surface. If the optoelectronic semiconductor chips are designed as volume emitters, they are configured to also emit electromagnetic radiation from side surfaces that extend between the emission surfaces and the undersides of the optoelectronic semiconductor chips facing the mounting surface.

[0012] The optoelectronic semiconductor chips are configured to emit electromagnetic radiation from different spectral ranges and / or exhibiting different spectral distributions. In the preferred embodiment with three optoelectronic semiconductor chips, a first optoelectronic semiconductor chip is configured to emit electromagnetic radiation from a first spectral range. A second optoelectronic semiconductor chip is configured to emit electromagnetic radiation from a second spectral range. A third optoelectronic semiconductor chip is configured to emit electromagnetic radiation from a third spectral range. Alternatively or additionally, the first, second, and third optoelectronic semiconductor chips can each be configured to emit electromagnetic radiation exhibiting different spectral distributions.In the following description, the terms electromagnetic radiation and light are used interchangeably. In general, electromagnetic radiation should therefore not necessarily be limited to the visible spectrum if it is to be referred to as light.

[0013] In one implementation, the optoelectronic semiconductor chips are configured to emit electromagnetic radiation of different colors and / or color temperatures. In general, the optoelectronic device can comprise any number of optoelectronic semiconductor chips configured to emit electromagnetic radiation of different colors and / or color temperatures.

[0014] In one embodiment, the group of optoelectronic semiconductor chips comprises a first, a second, and a third optoelectronic semiconductor chip. The first optoelectronic semiconductor chip can, for example, be configured to emit red light. The second optoelectronic semiconductor chip can, for example, be configured to emit green light. The third optoelectronic semiconductor chip can, for example, be configured to emit blue light. In this embodiment, the optoelectronic component can also be referred to as an RGB LED component.

[0015] In another embodiment, the optoelectronic device comprises three optoelectronic semiconductor chips, wherein the optoelectronic semiconductor chips are configured to emit electromagnetic radiation of different color temperatures, in particular electromagnetic radiation exhibiting different white color temperatures. For example, the first optoelectronic semiconductor chip may be configured to emit warm white light. The second optoelectronic semiconductor chip may, for example, be configured to emit neutral white light. A third optoelectronic semiconductor chip may, for example, be configured to emit cool white light. This embodiment may be referred to as a tunable white LED device. The color temperature is not directly related to a spectral range, but rather to a spectral distribution according to Planck's law of radiation.

[0016] In one embodiment, at least two optoelectronic semiconductor chips are provided for each color and / or color temperature. In one embodiment, the optoelectronic semiconductor chips of each color and / or color temperature can be operated with the same current.

[0017] In one implementation, the optoelectronic semiconductor chips are electrically interconnected according to different circuit diagrams, depending on their color and / or color temperature. For example, the optoelectronic semiconductor chips of a single color and / or color temperature can be connected in series or parallel. A combination of series and parallel connections of optoelectronic semiconductor chips of the same color and / or color temperature is also possible. This advantageously makes it possible to control the overall voltage for each color and / or color temperature.

[0018] The fact that the optoelectronic semiconductor chips are designed as mini and / or micro light-emitting diodes (LEDs) means that the optoelectronic component comprises particularly small optoelectronic semiconductor chips. In one embodiment, the optoelectronic semiconductor chips each have a light-emitting area that is less than or equal to 0.013 mm². 2 , especially less than or equal to 0.0032 mm 2 The 2024PF00551 5 optoelectronic semiconductor chips can, however, each have a different luminescent area larger than 0.0032 mm². 2 or 0.013 mm 2 is . Preferably, all optoelectronic semiconductor chips have the same luminescent area, but this is not absolutely necessary.

[0019] The optoelectronic semiconductor chips can have luminescent surfaces of any shape. For example, the optoelectronic semiconductor chips can have rectangular or square luminescent surfaces. In the example case of rectangular luminescent surfaces, the specified values ​​of 0.013 mm² correspond to this. 2 and 0.0032 mm 2 For the illuminated surface, edge lengths of 90pm x 150pm or 40pm x 80pm.

[0020] Advantageously, due to the particularly small size of the optoelectronic semiconductor chips, an effective and complete mixing of emitted electromagnetic radiation occurs within the optoelectronic component. As a result, the optoelectronic component exhibits a radiation characteristic or distribution during operation that is particularly uniform with respect to an emission angle and / or emission location. In other words, different wavelengths or colors, such as red, green, and blue, or, for example, white color temperatures, are not separately detectable or perceptible.

[0021] The optoelectronic semiconductor chips are not only particularly small, but can also be arranged very close together. This can be ensured by ensuring that, in one embodiment, the optoelectronic semiconductor chips have a distance from each other along at least one direction parallel to the substrate that is smaller than at least one edge length of the optoelectronic semiconductor chips. Advantageously, a more effective mixing of emitted electromagnetic radiation occurs in the optoelectronic component when the optoelectronic semiconductor chips are arranged so close together. However, it may also suffice if the optoelectronic 2024PF00551 6

[0022] Semiconductor chips have a larger lateral distance from each other. For example, the optoelectronic semiconductor chips may have a distance from each other, at least along one direction parallel to the substrate, that is smaller than a multiple of at least one edge length of the optoelectronic semiconductor chips. The close spacing between the optoelectronic semiconductor chips advantageously results in a uniform color impression of a mixed color at a short distance from the optoelectronic component. This means that the optoelectronic component has the same center of light for all colors and / or color temperatures.

[0023] The use of particularly small optoelectronic semiconductor chips, and optionally the small distances between these chips, enables efficient color mixing even with a small optoelectronic component size. Since the mixing of the electromagnetic radiation takes place entirely within the optoelectronic component, no further light mixing using additional optical elements outside the component is advantageously required.

[0024] In one embodiment, the ratio of the luminescent area of ​​an optoelectronic semiconductor chip to the mounting area of ​​the substrate is less than or equal to 0.05. Advantageously, this allows for a more efficient mixing of the electromagnetic radiation emitted by the optoelectronic semiconductor chips, since the optoelectronic semiconductor chips have particularly small luminescent areas compared to the mounting area.

[0025] In one embodiment, a metallization is arranged on the mounting surface of the carrier. The metallization has a connection section. The optoelectronic semiconductor chips are arranged on the connection section and electrically connected to it. The metallization is made of a metallic material, for example, 2024PF00551 7

[0026] Copper. The optoelectronic semiconductor chips can also be contacted individually, for example via contact pads if the optoelectronic semiconductor chips are designed as flip chips, and can be addressed individually or in sub-assemblies. The common connection section on which all optoelectronic semiconductor chips are arranged can, for example, be designed or function as a common anode or a common cathode.

[0027] In one embodiment, the ratio of the area of ​​the connection section to the mounting surface of the support is less than or equal to 0.2, in particular less than or equal to 0.16, and in particular less than or equal to 0.1. In one embodiment, the area of ​​the connection section is less than or equal to 0.1 mm². 2 is and / or the mounting surface is less than or equal to 1 mm 2This results in the optoelectronic component having a high density of optoelectronic semiconductor chips in a small area. Advantageously, in these embodiments, the optoelectronic semiconductor chips are arranged particularly close together, which improves the color mixing within the optoelectronic component.

[0028] In one embodiment, the substrate is white. In another embodiment, the substrate is flexible. In yet another embodiment, the substrate is polyimide. In this case, the substrate is a film. In an alternative embodiment, the substrate is a flexible printed circuit board (flex-PCB). In a further embodiment, the substrate is a rigid-PCB, meaning that the substrate is a printed circuit board but rigid rather than flexible. In this case, the substrate comprises, for example, a resin with embedded glass fibers. Advantageously, mounting the optoelectronic semiconductor chips on a polyimide film, a flex-PCB, or a rigid-PCB allows for close positioning of the optoelectronic semiconductor chips side by side.Furthermore, the optoelectronic component is therefore particularly flat and has a small component height.

[0029] If the substrate is designed as a flexible PCB, it can, for example, be made of polyester (PET). Compared to PET, however, polyimide is significantly more heat-resistant. This allows the optoelectronic semiconductor chips to be attached to the substrate, for example, using a soldering process such as reflux soldering, without damaging the foil substrate. Furthermore, polyimide is particularly flexible and resistant to tensile stress, making it especially suitable for assembly processes in semiconductor manufacturing. In particular, the polyimide foil expands very little during a soldering process.

[0030] The metallization can be attached to the substrate using an adhesive. For example, an acrylic or epoxy-based adhesive can be used for copper metallization on a PCB. However, it is also possible to deposit the metallization directly onto the substrate, such as a copper layer on polyimide. Alternatively, the metallization can be attached to the polyimide film using an adhesive. Conversely, it is also possible to deposit the metallization directly onto the PCB.

[0031] In one embodiment, a first mold material is arranged on the mounting surface of the substrate, and the optoelectronic semiconductor chips are embedded in this first mold material. The first mold material can, for example, be silicone. However, it can also be a different material. Advantageously, the optoelectronic semiconductor chips are protected by being embedded in the first mold material.

[0032] In a production mold, a surface of the first mold material facing away from the support is structured. 2024PF00551 9

[0033] Advantageously, the electromagnetic radiation mixed within the optoelectronic component is scattered at the structured surface of the first mold material. This further improves the mixing process. Moreover, this can increase the overall extraction efficiency of the optoelectronic component. The optoelectronic component can, for example, have a component height of 1.4 mm in a direction perpendicular to the mounting surface.

[0034] In one embodiment, initial scattering particles are embedded in the first mold material. Advantageously, the mixing of electromagnetic radiation can be further improved by these initial scattering particles. The initial scattering particles can, for example, consist of silicon dioxide or titanium dioxide. However, the initial scattering particles can also consist of a different material. Alternatively, the initial scattering particles can be omitted.

[0035] In one embodiment, a second mold material is arranged on a surface of the first mold material facing away from the mounting surface. The second mold material is made of plastic. Advantageously, electromagnetic radiation emanating from the first mold material can be further shaped by the second mold material. The second mold material can be particularly thin or have a low height in a direction perpendicular to the mounting surface of the carrier and, in particular, be thinner than the first mold material. The second mold material can also be referred to as a cap or a cover, or is designed as a cap or cover.

[0036] In one embodiment, second scattering particles are embedded in the second mold material. In this case, the second mold material containing the second scattering particles can also be referred to as a scattering layer or scattering film. The second scattering particles can, for example, be made of the same material (2024PF00551 10) as the first scattering particles or a different material. The concentration of the second scattering particles in the second mold material can be higher than the concentration of the first scattering particles in the first mold material. Advantageously, this allows for additional light shaping in the area of ​​the second mold material, whereby electromagnetic radiation is scattered laterally by the second scattering particles, i.e., parallel to the mounting surface of the carrier or parallel to the plane of extension of the second mold material.

[0037] In one embodiment, a third form material is arranged on the mounting surface of the carrier. The carrier and the third form material enclose a cavity. The optoelectronic semiconductor chips are arranged in the cavity. The third form material is reflective. The third form material is made of a plastic, for example, silicone. The reflective third form material can also be referred to as the frame or housing wall of the optoelectronic component, or is configured as such. Because the third form material is reflective, electromagnetic radiation can only be emitted from the surface of the first form material, with the second form material optionally being provided.

[0038] In comparison to the reflective third mold material, the first mold material is at least partially transparent to electromagnetic radiation emitted by the optoelectronic semiconductor chips and preferably essentially transparent, even if first scattering particles are provided. The third mold material can, for example, contain third scattering particles, making it reflective to electromagnetic radiation emitted by the optoelectronic semiconductor chips. Thus, the concentration of third scattering particles in the third mold material is higher than the concentration of first scattering particles in the first mold material. Furthermore, the concentration of third scattering particles in the third mold material is 2024PF00551 11

[0039] The concentration of the second scattering particles in the second molding material is greater than the concentration of the second scattering particles in the second molding material, if both the second molding material and the second scattering particles are present. The second molding material is designed to be partially translucent.

[0040] In one embodiment, electrical conductors are arranged on the mounting surface of the carrier for electrical contacting the connection section. The electrical conductors can be formed as sections of the metallization, or they can be a separate metallization. In one embodiment, the electrical conductors are at least partially embedded in the primary mold material. This advantageously protects the electrical conductors.

[0041] In one embodiment, the metallization has solder pads connected to the terminal section. The terminal section is spaced from a support edge. The solder pads are arranged in the region of the support edge. Advantageously, solder joints can be arranged on the solder pads, making the optoelectronic component surface-mountable.

[0042] In one embodiment, a through-opening is arranged in the area of ​​each soldered section. The through-openings extend completely through the soldered sections and the carrier in a direction perpendicular to the mounting surface of the carrier. Advantageously, the solder connections can be arranged in the through-openings to electrically connect and contact the soldered sections.

[0043] In one embodiment, the first mold material is arranged above the connection section with respect to the mounting surface of the carrier and covers the connection section, while the solder sections are uncovered by the first mold material. Advantageously, the solder sections and, if applicable, the 2024PF00551 12

[0044] Through-openings are accessible, allowing the soldered connections to be arranged in the area of ​​the solder sections or through-openings.

[0045] In one embodiment, the optoelectronic component comprises a further group of additional optoelectronic semiconductor chips arranged laterally adjacent to the mounting surface. These additional optoelectronic semiconductor chips are configured to emit electromagnetic radiation from further light-emitting surfaces facing away from the mounting surface. The additional optoelectronic semiconductor chips are configured to emit electromagnetic radiation from different spectral ranges. Pairs of one optoelectronic semiconductor chip and another optoelectronic semiconductor chip are configured to emit electromagnetic radiation from the same spectral range. The additional optoelectronic semiconductor chips are also configured as mini- and / or micro-LEDs.

[0046] The other optoelectronic semiconductor chips can also have a distance to each other and to the optoelectronic semiconductor chips at least along one direction parallel to the support, which is in each case smaller than at least one edge length or a multiple of the edge length of the optoelectronic semiconductor chips and the other optoelectronic semiconductor chips.

[0047] Advantageously, color mixing is increased by providing at least two optoelectronic semiconductor chips per spectral range, wavelength range, color, and / or color temperature, i.e., one optoelectronic semiconductor chip per group. This further improves color mixing. However, it is not mandatory that pairs of one and another optoelectronic semiconductor chip be configured to emit electromagnetic radiation from the same spectral range. Alternatively, the 2024PF00551 13

[0048] Pairs emit electromagnetic radiation from similar or different spectral ranges.

[0049] In one embodiment, the optoelectronic semiconductor chips are arranged in a regular matrix. Advantageously, the optoelectronic semiconductor chips can be arranged such that optimal mixing of electromagnetic radiation of different wavelengths is achieved. For example, optoelectronic semiconductor chips designed to emit electromagnetic radiation from the same spectral range may be arranged neither in the same column nor in the same row of the matrix. The matrix arrangement can vary depending on the number of optoelectronic semiconductor chips.

[0050] In one embodiment, a light guide structure is arranged over the optoelectronic semiconductor chips with respect to the mounting surface of the substrate. Advantageously, the light guide structure is designed to couple the mixed light into another device. For example, the optoelectronic component can be configured as automotive lighting. In this case, the light guide structure can be configured, for example, to couple light into display instruments. However, the optoelectronic component does not necessarily have to be configured as automotive lighting and can alternatively be used, for example, for display instruments of production machines. The optoelectronic component can generally be configured as lighting, for example, for backlighting decorative elements, for backlighting translucent materials, or for coupling into light guide structures.

[0051] The properties, features and advantages of this invention described above, as well as the manner in which they are achieved, will become clearer and more easily understood in connection with the following description of 2024PF00551 14

[0052] Examples of embodiments, which are explained in more detail in connection with the drawings. They show:

[0053] Fig. 1: an optoelectronic component according to a first embodiment in a top view;

[0054] Fig. 2: an optoelectronic component according to a second embodiment in a top view;

[0055] Fig. 3: an optoelectronic component according to a third embodiment in a top view;

[0056] Fig. 4: an optoelectronic component according to a fourth embodiment in a perspective view;

[0057] Fig. 5: an optoelectronic component according to a fifth embodiment in a perspective view;

[0058] Fig. 6: an optoelectronic component according to a sixth embodiment in a top view;

[0059] Fig. 7: the optoelectronic component according to the sixth embodiment in a perspective view;

[0060] Fig. 8: an optoelectronic component according to a seventh embodiment in a perspective view;

[0061] Fig. 9: the optoelectronic component according to the seventh embodiment in a further perspective view;

[0062] Fig. 10: an optoelectronic component according to an eighth embodiment in a perspective view;

[0063] Fig. 11: an optoelectronic component according to a ninth embodiment in a perspective view;

[0064] Fig. 12: An optoelectronic component according to a tenth embodiment in a top view; and 2024PF00551 15

[0065] Fig. 13 : an optoelectronic component according to an eleventh embodiment in a top view .

[0066] Fig. 1 schematically shows an optoelectronic component 101 according to a first embodiment in a top view.

[0067] The optoelectronic component 101 has a carrier 20. The carrier 20 is, for example, made of polyimide and is designed as a flexible film. In an alternative embodiment, the carrier 20 is designed as a flexible printed circuit board (flex-PCB) or as a rigid printed circuit board (rigid-PCB). The carrier 20 can also be made of a different material, such as a ceramic. The carrier 20 has a mounting surface 21 and a base surface 22 opposite the mounting surface 21, which is not visible in the top view of Fig. 1.

[0068] A metallization 23 is arranged on the mounting surface 21. The metallization 23 is, for example, made of copper. However, the metallization 23 can also be made of another electrically conductive material. The metallization 23 can also be omitted. The metallization 23 has a connection section 24, solder sections 25, and electrical conductors 26. The connection section 24 is spaced from an edge 27 of the carrier 20 and, for example, is arranged in the center of the carrier 20.

[0069] The solder sections 25 are each arranged at the edge 27 of the carrier 20. For example, the metallization 23 has a total of four solder sections 25. However, the metallization 23 can also have no solder sections 25, one solder section 25, or any number of solder sections 25. Also by way of example, the solder sections 25 are each arranged in a corner 28 of the carrier 20. If only two solder sections 25 are provided, the solder sections 25 can be arranged, for example, on opposite sides or at opposite corners 28 of the carrier 20. The conductor tracks 26 connect the connection section 24 to the solder sections 25 mechanically and electrically. However, the connection section 24, the solder sections 25, and the electrical conductor tracks 26 can each be omitted.

[0070] On the mounting surface 21 of the carrier 20, a group 30 of optoelectronic semiconductor chips 31, 32, 33 is arranged laterally side by side. By way of example, the optoelectronic component 101, or the group 30 of optoelectronic semiconductor chips 31, 32, 33, comprises a total of three optoelectronic semiconductor chips 31, 32, 33. However, the optoelectronic component 101, or the group 30 of optoelectronic semiconductor chips 31, 32, 33, can also comprise a different number of optoelectronic semiconductor chips 31, 32, 33.

[0071] The optoelectronic semiconductor chips 31, 32, 33 are configured to emit electromagnetic radiation from luminescent surfaces 34 facing away from the mounting surface 21. Additionally, the optoelectronic semiconductor chips 31, 32, 33 can be configured to emit electromagnetic radiation from their side surfaces extending between the mounting surface 21 of the carrier 20 and the luminescent surfaces 34.

[0072] The optoelectronic semiconductor chips 31, 32, 33 are, by way of example, rectangular, meaning that their cross-section is parallel to the mounting surface 21 of the carrier 20, and thus their light-emitting surfaces 34 are also rectangular. However, the optoelectronic semiconductor chips 31, 32, 33 can have any cross-section parallel to the mounting surface 21 of the carrier 20, which means that the light-emitting surfaces 34 can also have any geometric shape. For example, the optoelectronic semiconductor chips or the light-emitting surfaces 34 can be square or circular.

[0073] The rectangular optoelectronic semiconductor chips 31, 32, 32 are arranged by way of example in a column, with immediately adjacent optoelectronic 2024PF00551 17

[0074] Semiconductor chips 31, 32, 32 are oriented with their long sides facing each other.

[0075] The optoelectronic semiconductor chips 31, 32, 33 are configured to emit electromagnetic radiation from different spectral ranges. For example, group 30 of optoelectronic semiconductor chips 31, 32, 33 includes a first optoelectronic semiconductor chip 31 configured to emit red light. Furthermore, group 30 of optoelectronic semiconductor chips 31, 32, 33 includes a second optoelectronic semiconductor chip 32 configured to emit green light. Finally, group 30 of optoelectronic semiconductor chips 31, 32, 33 includes a third optoelectronic semiconductor chip 33 configured to emit blue light. In the embodiment shown in Fig. 1 is the optoelectronic component 101, which is designed as an RGB LED.The optoelectronic semiconductor chips 31 , 32 , 33 can also each be designed to emit electromagnetic radiation from other spectral ranges, such as from the infrared or ultraviolet spectral range.

[0076] Furthermore, the optoelectronic semiconductor chips 31, 32, 33 can alternatively be configured to emit electromagnetic radiation of different color temperatures. For example, the first optoelectronic semiconductor chip 31 can be configured to emit warm white light. The second optoelectronic semiconductor chip 32 can, for example, be configured to emit neutral white light. The third optoelectronic semiconductor chip 32 can, for example, be configured to emit cool white light.

[0077] In the exemplary embodiment, the optoelectronic semiconductor chips 31, 32, 33 are also arranged on the connection section 24, i.e., with respect to the mounting surface 21 of the carrier 20 above the connection section 24, and are electrically connected to the connection section 24. The optoelectronic semiconductor chips 31, 32, 33 can, for example, be arranged on the connection section 24 by means of a solder material, whereby the optoelectronic semiconductor chips 31, 32, 33 are attached to the connection section 24 and electrically connected to the connection section 24.

[0078] The connection section 24 can, for example, be used as a common anode or as a common cathode. Each of the optoelectronic semiconductor chips 31, 32, 33 can be configured to be separately addressable. The electrical contacting of the connection section 24 is achieved via the solder sections 25 and the electrical conductors 26. The variant of the electrical contacting of the optoelectronic semiconductor chips 31, 32, 33 shown in Fig. 1 is merely exemplary. For example, a metallization 23 with a connection section 24 for electrical contacting is not necessarily required. The optoelectronic semiconductor chips

[0079] Alternatively, 31, 32, 33 can each be electrically contacted by means of bond wires.

[0080] Fig. 2 schematically shows an optoelectronic component 102 according to a second embodiment in a top view. The optoelectronic component 102 according to the second embodiment exhibits similarities to the optoelectronic component 101 according to the first embodiment. In the following description, only the differences between the optoelectronic component 102 according to the second embodiment and the optoelectronic component 101 according to the first embodiment are explained. The reference numerals are retained for similar and identical components.

[0081] In contrast to the embodiment according to Fig. 1, the optoelectronic component 102 according to Fig. 2 has a total of three groups 30, 40, 50 of optoelectronic semiconductor chips 31,

[0082] 32, 33, 41, 42, 43, 51, 52, 53. In addition to group 30, another group 40 and an additional group 50 are provided. Group 30 comprises the first, second, and third optoelectronic semiconductor chips 31, 32, 33. The additional group 40 comprises another first, another second, and another third optoelectronic semiconductor chip 41, 42, 43. The additional group 50 comprises an additional first, an additional second, and an additional third optoelectronic semiconductor chip 51, 52, 53. All optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged laterally next to each other on the mounting surface 21 of the carrier 20. The additional group 50 with the additional optoelectronic semiconductor chips 51, 52, 53 can also be omitted.

[0083] As with the optoelectronic component 101 according to the first embodiment, the optoelectronic component 102 according to the second embodiment additionally provides the metallization 23 with connection section 24, solder sections 25 and electrical conductors 26, and the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged on the connection section 24 and electrically connected to it. However, the metallization 23 can also be omitted in the optoelectronic component 102 according to Fig. 2, whereby the connection section 24, the solder sections 25 and the electrical conductors 26 can each be omitted individually.

[0084] The further optoelectronic semiconductor chips 41, 42, 43 and the additional optoelectronic semiconductor chips 51, 52, 53 are each configured to emit electromagnetic radiation on further luminous surfaces 34 or additional luminous surfaces 34 facing away from the mounting surface.

[0085] Preferably, the further optoelectronic semiconductor chips 41, 42, 43 are configured to emit electromagnetic radiation from different spectral ranges, and the additional optoelectronic semiconductor chips 51, 52, 53 are configured to emit electromagnetic radiation from different spectral ranges. Equally preferred, but not necessarily, are pairs of an optoelectronic semiconductor chip 31, 32, 33 and a further optoelectronic semiconductor chip 41, 42, 43, and pairs of an optoelectronic semiconductor chip 31, 32, 33 and an additional optoelectronic semiconductor chip 51, 52, 53, each configured to emit electromagnetic radiation from the same spectral range.

[0086] For example, the further group 40 and the additional group 50 are each configured like group 30, i.e., each of groups 30, 40, and 50 has a first optoelectronic semiconductor chip 31, 41, and 51 configured to emit red light. Furthermore, each of groups 30, 40, and 50 has a second optoelectronic semiconductor chip 32, 42, and 52 configured to emit green light. Additionally, each of groups 30, 40, and 50 has a third optoelectronic semiconductor chip 32, 42, and 52 configured to emit blue light. In this case, group 30, further group 40, and additional group 50 can also be referred to as RGB groups.

[0087] The optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged in a regular matrix as an example. In the exemplary embodiment with a total of nine optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53, the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged in a square 3x3 matrix, having three columns and three rows. The groups 30, 40, 50 are each arranged in laterally adjacent columns.

[0088] Within a group 30, 40, 50 or column, the exemplary rectangular optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged side by side such that the long sides of immediately adjacent optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are, for example, facing each other. Within a row, the optoelectronic 2024PF00551 21

[0089] Semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged such that short sides of immediately adjacent optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 face each other.

[0090] To achieve the best possible mixing of electromagnetic radiation from the different spectral ranges, the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged such that the first optoelectronic semiconductor chips 31, 41, 51 are arranged in different rows, that the second optoelectronic semiconductor chips 32, 42, 52 are arranged in different rows, and that the third optoelectronic semiconductor chips 32, 42, 52 are arranged in different rows. In other words, those optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged in different rows that are configured to emit electromagnetic radiation from the same spectral range.

[0091] Fig. 3 schematically shows a top view of an optoelectronic component 103 according to a third embodiment. The optoelectronic component 103 according to the third embodiment is similar to the optoelectronic component 102 according to the second embodiment. The following description will only explain the differences between the optoelectronic component 103 according to the third embodiment and the optoelectronic component 102 according to the second embodiment. The reference numerals are retained for similar and identical components.

[0092] In contrast to the embodiment shown in Fig. 2, the optoelectronic component 103 shown in Fig. 3 has, in addition to group 30 and the further group 40, a total of four additional groups 50, each with three additional optoelectronic semiconductor chips 51, 52, 53. Group 30, the further group 40, and all additional groups 50 are configured as RGB groups. 2024PF00551 22

[0093] All optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53, or their luminescent surfaces 34, are, by way of example, rectangular in shape. Group 30 and the further group 40 are arranged in columns, wherein the short sides of the rectangular optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43 face each other in the case of immediately adjacent optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43 within a column.

[0094] The four additional groups 50 are arranged between group 30 and the next group 40. Two of the four additional groups 50 are arranged laterally next to each other in a column, with the long sides of the optoelectronic semiconductor chips 51, 52, 53 facing each other within the columns, and the short sides of the optoelectronic semiconductor chips 51, 52, 53 facing each other between the columns of the additional groups 50 (i.e., within the rows of the additional groups 50). The additional optoelectronic semiconductor chips 51, 52, 53 thus form a total of six rows, each with two optoelectronic semiconductor chips 51, 52, 53. Within the rows and columns of the additional optoelectronic semiconductor chips 51, 52, 53, no identically configured optoelectronic semiconductor chips 51, 52, 53 are arranged directly next to each other.that immediately adjacent additional optoelectronic semiconductor chips 51, 52, 53 are designed to emit electromagnetic radiation from different spectral ranges.

[0095] The columns of group 30 and the additional group 40 extend in the same direction as the columns of the additional groups 50. The additional optoelectronic semiconductor chips 51, 52, 53 of the additional groups 50 are arranged azimuthally offset by 90° relative to the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43 of group 30 and the additional group 40. Group 30 and the additional group 40 are arranged such that the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43 of group 30 and the additional group 40 are positioned opposite each other and are configured to emit electromagnetic radiation from different spectral ranges. At least one of the additional groups 50 may also be omitted. The other group, 40, can also be omitted.

[0096] Fig. 4 schematically shows an optoelectronic component 104 according to a fourth embodiment in a perspective view. The optoelectronic component 104 according to the third embodiment exhibits similarities to the optoelectronic component 102 according to the second embodiment. In the following description, only the differences between the optoelectronic component 104 according to the fourth embodiment and the optoelectronic component 102 according to the second embodiment are explained. The reference numerals are retained for similar and identical components.

[0097] The optoelectronic component 104 according to Fig. 4 comprises the elements of the optoelectronic component according to Fig. 2 and additional elements. Alternatively, the optoelectronic component 104 according to Fig. 4 can comprise the elements of the optoelectronic component 101, 103 according to Fig. 1 or Fig. 3 and each of the additional elements described below.

[0098] In the optoelectronic component 104 according to Fig. 4, a first mold material 60 is arranged on the mounting surface 21 of the carrier 20. The first mold material 60 can, for example, be a silicone or another plastic. The optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are embedded in the first mold material 60. On a surface 61 facing away from the mounting surface, the first mold material 60 can be structured to scatter electromagnetic radiation from different spectral ranges and improve extraction efficiency, although this is not mandatory. 2024PF00551 24

[0099] The first molding material 60 covers, by way of example, the entire mounting surface 21 of the carrier 20, whereby the connection section 24, the solder sections 25 and the electrical conductor tracks 26 are covered by the first molding material 60. It may also suffice if the first molding material 60 only covers the connection section 24, or if only the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are embedded in the molding material 60, while the connection section 24 is only partially covered by the first molding material 60.

[0100] The optoelectronic component according to Fig. 4 also has a further metallization 70 with additional solder sections 71. The further metallization 70 is arranged on the base surface 22 of the carrier 20. The additional solder sections 71 are arranged on the base surface 22 directly opposite the solder sections 25 located on the mounting surface 21. The additional solder sections 71 are electrically connected to the solder sections 25. In the embodiment shown in Fig. 4, the solder sections 25 and the additional solder sections 71 are electrically connected to each other by means of through connections that extend from the base surface 22 of the carrier 20 to the mounting surface 21 of the carrier and are not visible in Fig. 4. The additional solder sections 71 enable surface mounting of the optoelectronic component 104.

[0101] The solder sections 25 and the further solder sections 71, also located in the region of the edge 27 of the carrier 20, enable the optoelectronic component 104 to be aligned with solder pads during soldering assembly. Each of these pads is connected to the further solder sections 71 by means of solder joints, creating a conductive and thus electrically connectable connection. This alignment occurs due to interfacial tensions acting at the interfaces between the solder joints and the solder pads, between the solder joints and the further solder sections 71, and between the solder joints and the surrounding environment, resulting in a total of 2024PF00551 25

[0102] A torque acts on the optoelectronic component 104. This torque causes the optoelectronic component 104 to self-align, such that each additional solder section 71, and thus each additional solder section 25, is positioned directly above a solder pad. Advantageously, the optoelectronic component 104 does not need to be manually aligned during surface mounting.

[0103] Fig. 5 schematically shows an optoelectronic component 105 according to a fifth embodiment in a perspective view. The optoelectronic component 105 according to the fifth embodiment exhibits similarities to the optoelectronic component 104 according to the fourth embodiment. In the following description, only the differences between the optoelectronic component 105 according to the fifth embodiment and the optoelectronic component 104 according to the fourth embodiment are explained. The reference numerals are retained for similar and identical components.

[0104] In the optoelectronic component 105 according to Fig. 5, a through-opening 80 is arranged in the area of ​​each solder section 25j. The through-openings 80 extend completely through each solder section 25 and the carrier 20 in a direction perpendicular to the mounting surface 21 of the carrier 20j. Solder connections can be arranged in the through-openings 80. This allows the solder sections 25 to be electrically connected to the other solder sections 71. If no further metallization 70 is provided, the solder connections arranged in the through-openings 80 can, for example, serve to electrically contact the solder sections 25 directly from the base surface 22 of the carrier 20.If, however, the further solder sections 71 of the further metallization 70 are provided on the base surface 22, the through-openings 80 can also extend through the further solder sections 71, which is not absolutely necessary, since the solder connections with the further 2024PF00551 26.

[0105] Solder sections 71 can be connected if the through-openings 80 extend completely through the carrier 20.

[0106] To allow the solder joints to be arranged in the through-holes 80, the mold material 70 does not cover the solder sections 25. Only the connection area 24 is completely covered by the mold material 60. The electrical conductor tracks 26 are partially covered by the mold material 60.

[0107] The optoelectronic components 101, 102, 103, 104, 105 of Figures 1 to 5 are based on the idea of ​​using optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53, which are configured as mini and / or micro light-emitting diodes (LEDs). The optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 can, for example, each have a light-emitting area 34 that is less than or equal to 0.012 mm². 2 , especially less than or equal to 0.032 mm 2, in particular smaller. A quotient of the luminescent area 34 of an optoelectronic semiconductor chip 31, 32, 33, 41, 42, 43, 51, 52, 53 and the mounting area 21 of the carrier 20 can, for example, be less than or equal to 0.005. A quotient of an area of ​​the connection section 24 and the mounting area 21 of the carrier 20 can, for example, be less than or equal to 0.2, in particular less than or equal to 0.16, in particular less than or equal to 0.1. The area of ​​the connection section 24 can, for example, be less than or equal to 0.1 mm². 2 and / or the mounting surface 21 can be less than or equal to 1mm 2 be.

[0108] The values ​​given are merely examples and should not be considered limiting to the optoelectronic components 101, 102, 103, 104, 105. They illustrate, however, that the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 of at least one group 30 are designed to be so small that complete mixing of electromagnetic radiation can occur entirely within each of the optoelectronic components 101, 102, 103, 104, 105. This allows the optoelectronic components 101, 2024PF00551 27

[0109] 102, 103, 104, 105 are designed to emit, for example, white light with a particularly uniform beam characteristic.

[0110] Furthermore, immediately adjacent optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 of the optoelectronic components 101, 102, 103, 104, 105 can each have a distance from one another, at least along one direction parallel to the carrier 20, i.e., parallel to the mounting surface 21 of the carrier 20, which is in each case less than at least one edge length of the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53. In other words, particularly small optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are provided, which are arranged particularly close together on the mounting surface 21 of the carrier 20. This can further improve the mixing of electromagnetic radiation from different spectral ranges.

[0111] Fig. 6 schematically shows an optoelectronic component 106 according to a sixth embodiment in a top view. The optoelectronic component 106 according to the sixth embodiment exhibits similarities to the optoelectronic component 102 according to the second embodiment. In the following description, only the differences between the optoelectronic component 106 according to the sixth embodiment and the optoelectronic component 102 according to the second embodiment are explained. The reference numerals are retained for similar and identical components.

[0112] In contrast to the embodiment shown in Fig. 2, the optoelectronic device 106 shown in Fig. 6 comprises a total of twelve optoelectronic semiconductor chips 31, 32, 33. The optoelectronic semiconductor chips 31, 32, 33 are arranged, by way of example, in a regular, rectangular, 3x4 matrix with three columns and four rows. Three first optoelectronic semiconductor chips 31 are configured to emit red light. Three second optoelectronic semiconductor chips 32 are configured to emit green light. Six third optoelectronic semiconductor chips 33 are configured to emit blue light. The third optoelectronic semiconductor chips 33 are arranged in two rows positioned between the rows of the remaining optoelectronic semiconductor chips 31, 32.

[0113] The electrical contacting of the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 is realized by means of electrical conductor tracks 26 arranged on the mounting surface 21. However, the exact electrical contacting can also be realized differently from the exemplary representation in Fig. 6 and will therefore not be explained in more detail.

[0114] Fig. 7 schematically shows the optoelectronic component 106 of Fig. 6 in a perspective view. The first mold material 60 is arranged on the mounting surface 21. The optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are embedded in the first mold material 60.

[0115] Fig. 8 schematically shows an optoelectronic component.

[0116] 107 according to a seventh embodiment in a perspective view. The optoelectronic component 107 according to the seventh embodiment has the elements of the optoelectronic component 106 according to the sixth embodiment and an additional element. A second mold material 62 is arranged on the surface 61 of the first mold material 60. The second mold material forms a cap or a cover.

[0117] First scattering particles can be embedded in the first mold material 60. Second scattering particles can be embedded in the second mold material 62. The first scattering particles can improve the mixing of electromagnetic radiation in the first mold material 60. The second scattering particles can additionally provide lateral scattering of electromagnetic radiation. 2024PF00551 29

[0118] The radiation causes a particularly homogeneous color impression of the light emitted by the optoelectronic component 107. Typically, the concentration of the second scattering particles in the second mold material 62 is greater than the concentration of the first scattering particles in the first mold material 60.

[0119] Fig. 9 shows the optoelectronic component 107 of Fig. 8 in a further perspective view. In Fig. 8, the perspective is chosen such that a view of the mounting surface 21 of the carrier 20 is shown. In Fig. 9, however, the perspective is chosen such that a view of the base surface 22 of the carrier 20 is shown. The optoelectronic component 107 has additional solder sections 71, which are arranged on the base surface 22, for surface mounting. The additional solder sections 71 are arranged in the region of the corners 28 of the carrier 20.

[0120] Fig. 10 schematically shows an optoelectronic component 108 according to an eighth embodiment in a perspective view of the base surface 22. The optoelectronic component 108 according to the eighth embodiment has the elements of the optoelectronic component 107 according to the seventh embodiment and an additional feature.

[0121] In contrast to the optoelectronic component 107 according to Fig. 9, the optoelectronic component 108 according to Fig. 10 has solder control structures 72. The solder control structures 72 are formed in the region of the corners 28 of the carrier 20 and extend completely through the carrier 20 as well as the solder sections 25 and the further solder sections 71 in a direction perpendicular to the mounting surface 21. The solder structures 72 are formed as recesses in the region of the corners 28 of the carrier. By way of example, the recesses are cylindrically shaped. A solder joint can be arranged in each of the solder control structures 72. The solder control structures 72 thus enable, in an analogous manner to the through-openings 80 of the optoelectronic component 2024PF00551 30

[0122] Figure 105 of Fig. 5 shows a surface mounting and self-alignment within the framework of the surface mounting.

[0123] Fig. 11 schematically shows an optoelectronic component.

[0124] 109 according to a ninth embodiment in a perspective view of the mounting surface. The optoelectronic component 109 according to the ninth embodiment has the elements of the optoelectronic component 106 according to the sixth embodiment and one additional element.

[0125] In addition to the first mold material 60, a third mold material 63 is arranged on the mounting surface 21 of the carrier 20. The third mold material 63 forms a frame on the mounting surface 21. The frame, or the third mold material 63, and the carrier 20 enclose a cavity 90. The optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are arranged in the cavity 90. The first mold material 60 is also arranged in the cavity 90, and the optoelectronic semiconductor chips 31, 32, 33, 41, 42, 43, 51, 52, 53 are embedded in the first mold material 60. The third mold material 63 is configured as a reflector. For this purpose, the third molding material can, for example, contain embedded third scattering particles. The concentration of the third scattering particles in the third molding material 63 is typically greater than the concentration of the first and second scattering particles in the first and second molding materials 60 and 62, respectively.Alternatively or additionally, the third mold material 63 can have a reflective coating. The first mold material 60 can also be omitted. Furthermore, the second mold material 62 can be provided. The second mold material 62 can be arranged in the cavity 90, but this is not mandatory.

[0126] Fig. 12 schematically shows an optoelectronic component.

[0127] 110 according to a tenth embodiment in a top view. The optoelectronic component 110 according to the tenth embodiment exhibits similarities to the optoelectronic component 106 according to the sixth embodiment. In the following description, only the differences 2024PF00551 31 between the optoelectronic component 110 according to the tenth embodiment and the optoelectronic component 106 according to the second embodiment are explained.

[0128] The optoelectronic device 110 comprises a total of sixteen optoelectronic semiconductor chips 31, 32, 33 arranged in a 4x4 square matrix. Four first optoelectronic semiconductor chips 31 are configured to emit red light. Four second optoelectronic semiconductor chips 32 are configured to emit green light. Eight third optoelectronic semiconductor chips 33 are configured to emit blue light. Four of the third optoelectronic semiconductor chips are arranged in a 2x2 submatrix, while the remaining optoelectronic semiconductor chips 31, 32, 33 are arranged around the 2x2 submatrix. These optoelectronic semiconductor chips 31 , 32 , 33 arranged outside the 2x2 sub-matrix can be considered as four RGB groups .

[0129] Fig. 13 schematically shows an optoelectronic component 113 according to an eleventh embodiment in a top view. The optoelectronic component 111 according to the eleventh embodiment exhibits similarities to the optoelectronic component 106 according to the sixth embodiment. In the following description, only the differences between the optoelectronic component 111 according to the eleventh embodiment and the optoelectronic component 106 according to the second embodiment are explained.

[0130] The optoelectronic semiconductor chips 31, 32 of the optoelectronic device 111 are configured to emit electromagnetic radiation of different color temperatures. For example, six first optoelectronic semiconductor chips 31 are configured to emit warm white light. Similarly, six second optoelectronic semiconductor chips 31 are configured to emit cool white light. The first and second optoelectronic semiconductor chips 31, 32 are each arranged in rows of three columns. The second optoelectronic semiconductor chips 32 are arranged between the first optoelectronic semiconductor chips 31.

[0131] Pairs of a first and a second optoelectronic semiconductor chip 31, 32 can each be considered a group of optoelectronic semiconductor chips 31, 32. Within the group, the optoelectronic semiconductor chips 31, 32 are configured to emit electromagnetic radiation from different spectral ranges. By using particularly small optoelectronic semiconductor chips 31, 32, which may be arranged close together, efficient mixing of cold and warm light can be achieved, thereby producing a desired and uniform thermal effect.

[0132] The invention has been illustrated and described in more detail with reference to preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations can be derived from them by a person skilled in the art without departing from the scope of protection of the invention.

[0133] 2024PF00551 33

[0134] REFERENCE MARK LIST

[0135] 101 optoelectronic component according to the first embodiment

[0136] 102 optoelectronic component according to the second embodiment

[0137] 103 optoelectronic component according to the third embodiment

[0138] 104 optoelectronic component according to the fourth embodiment

[0139] 105 optoelectronic component according to the fifth embodiment

[0140] 106 optoelectronic component according to the sixth embodiment

[0141] 107 optoelectronic component according to the seventh embodiment

[0142] 108 optoelectronic component according to the eighth design form

[0143] 109 optoelectronic component according to the ninth embodiment

[0144] 110 optoelectronic component according to the tenth embodiment

[0145] 111 optoelectronic component according to the eleventh embodiment

[0146] 20 carriers

[0147] 21 Mounting surface of the carrier

[0148] 22 Base area of ​​the support

[0149] 23 Metallization

[0150] 24 Connection section of the metallization

[0151] 25 Soldering section of the metallization

[0152] 26 electrical conductors of the metallization

[0153] 27 Edge of the carrier

[0154] 28 Corner of the support

[0155] 30 Group of optoelectronic semiconductor chips

[0156] 31 first optoelectronic semiconductor chip

[0157] 32 second optoelectronic semiconductor chip 2024PF00551 34

[0158] 33 third optoelectronic semiconductor chip

[0159] 34 Light-emitting area of ​​an optoelectronic semiconductor chip

[0160] 40 more groups of optoelectronic semiconductor chips

[0161] 41 first further optoelectronic semiconductor chip

[0162] 42 second further optoelectronic semiconductor chip

[0163] 43 third further optoelectronic semiconductor chip

[0164] 50 additional group of optoelectronic semiconductor chips

[0165] 51 first additional optoelectronic semiconductor chip

[0166] 52 second additional optoelectronic semiconductor chip

[0167] 53 third additional optoelectronic semiconductor chip

[0168] 60 first molding material

[0169] 61 Surface of the molding material

[0170] 62 second molding material

[0171] 63 third molding material

[0172] 70 further metallizations

[0173] 71 more soldering sections

[0174] 72 solder control structures

[0175] 80 through openings

[0176] 90 cavity

Claims

1. 2024PF00551 35 PATENT CLAIMS 1. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) comprising a carrier (20) with a mounting surface (21) and a group (30) of optoelectronic semiconductor chips (31, 32, 33) arranged laterally adjacent to one another on the mounting surface (21), wherein the optoelectronic semiconductor chips (31, 32, 33) are configured to emit electromagnetic radiation at luminescent surfaces (34) facing away from the mounting surface (21), wherein the optoelectronic semiconductor chips (31, 32, 33) are configured to emit electromagnetic radiation from different spectral ranges and / or having different spectral distributions, wherein the optoelectronic semiconductor chips (31, 32, 33) are designed as mini and / or micro light-emitting diodes.

2. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claim 1, wherein the optoelectronic semiconductor chips (31, 32, 33) have a distance from each other at least along a direction parallel to the support (20) which is in each case less than at least one edge length of the optoelectronic semiconductor chips (31, 32, 33).

3. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claim 1 or 2, wherein the optoelectronic semiconductor chips (31, 32, 33) are configured to emit electromagnetic radiation of different colors and / or color temperatures.

4. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to one of the preceding claims, wherein the optoelectronic semiconductor chips (31, 32, 33) each have a luminescent surface (34) which is smaller or 2024PF00551 36 equals 0.013 mm 2, especially less than or equal to 0.0032 mm 2 is .

5. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claim 4, wherein the ratio of the luminescent area (34) of an optoelectronic semiconductor chip (31, 32, 33) to the mounting area (21) of the carrier (20) is less than or equal to 0.

05.

6. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to one of the preceding claims, wherein a metallization (23) is arranged on the mounting surface (21) of the carrier (20), wherein the metallization (23) has a connection section (24), wherein the optoelectronic semiconductor chips (31, 32, 33) are arranged on the connection section (24) and are electrically connected to the connection section (24).

7. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claim 6, wherein a quotient of an area of ​​the connection section (24) and the mounting surface (21) of the carrier (20) is less than or equal to 0.2, in particular less than or equal to 0.16, in particular less than or equal to 0.

1.

8. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claim 6 or 7, wherein the area of ​​the connection section (24) is less than or equal to 0.1 mm² 2 is and / or where the mounting surface is less than or equal to 1 mm 2 is.

9. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to one of the preceding claims, wherein the carrier (20) is flexible. 2024PF00551 37 10. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to one of the preceding claims, wherein a first mold material (60) is arranged on the mounting surface (21) of the carrier (20) and the optoelectronic semiconductor chips (31, 32, 33) are embedded in the first mold material (60).

11. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claim 4, wherein the metallization (23) has solder sections (25) connected to the connection section (24), wherein the connection section (24) is spaced apart from a support edge (27), and wherein the solder sections (25) are arranged in the region of the support edge (27).

12. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claim 11, wherein a through-hole (80) is arranged in the area of ​​the solder sections (25), wherein the through-holes (80) extend completely through the solder sections (25) and the carrier (20) in a direction perpendicular to the mounting surface (21) of the carrier (20).

13. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to claims 10 and 11, wherein the first mold material (60) is arranged over the connection section (24) with respect to the mounting surface (21) of the carrier (20) and covers the connection section (24) and the solder sections (25) are not covered by the first mold material (60).

14. Optoelectronic (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) component according to claim 1, wherein a surface (61) of the first mold material (60) facing away from the mounting surface (21) of the carrier (20) is provided 2024PF00551 38 second mold material (62) is arranged, wherein first scattering particles are embedded in the first mold material (60) and / or second scattering particles are embedded in the second mold material (62).

15. Optoelectronic component (101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111) according to one of the preceding claims, wherein a third mold material (63) arranged on the mounting surface (21) of the carrier (20), wherein the carrier (20) and the third mold material (63) enclose a cavity (90), wherein the optoelectronic semiconductor chips (31, 32, 33) are arranged in the cavity (90), wherein the third mold material (63) is reflective.

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