Light source device and optical semiconductor device including same

Abstract

Disclosed are a light source device and an optical semiconductor device comprising same, the light source device providing an effective thermal path while maintaining electrical neutrality. According to an embodiment of the present invention, the light source device comprises: a substrate having an upper metal wire disposed on the upper surface thereof, a lower metal wire disposed on the lower surface thereof, and a through-metal via connected between the upper metal wire and the lower metal wire; a light-emitting element disposed on the upper surface of the substrate, electrically connected to the upper metal wire to receive power, and emitting light upward by using the power; a lens disposed above the light-emitting element and configured to concentrate light emitted from the light-emitting element, direct an output direction of the light to a desired direction, or change an emission distribution of the light; an electrode part including a first electrode disposed on one side of the lower surface of the substrate and a second electrode disposed on the other side of the lower surface of the substrate, and configured to provide the power through the first electrode and the second electrode; and a metal core printed circuit board (MCPCB) disposed below the substrate and including a protrusion part protruding toward the lower surface of the substrate within an area that does not overlap the first electrode and the second electrode in the vertical direction.

Description

Light source device and optical semiconductor device including the same

[0001] The present invention relates to a light source device, and more specifically, to a light source device with improved heat dissipation performance by providing a neutral thermal path in a neutral metalized area where power and signals are not applied, and an optical semiconductor device including the same.

[0002] This invention was carried out as a result of the research conducted under the project “Development of Core Technology for High-Performance Semiconductor High-Efficiency Fine-Pitch Microbump Bonding Process Equipment” (Project No.: RS-2024-00431837, Performing Organization: Hana Optronics, Research Period: 2024.05.01 - 2029.01.31), which is part of the Semiconductor Advanced Packaging Core Technology Development, High-Efficiency / Fine-Pitch Packaging Manufacturing Technology project promoted by the National Research Foundation of Korea with support from the Ministry of Science and ICT. Meanwhile, the Government of the Republic of Korea does not hold any ownership rights regarding this invention.

[0003] Recently, high optical flux is required in fields such as LiDAR and optical communication for various reasons, including improved signal-to-noise ratio, high-precision measurement, and securing high-speed operation performance. Semiconductor light sources such as VCSELs (Vertical Cavity Surface Emitting Lasers), LEDs (Light-Emitting Diodes), and EELs (Edge-Emitting Lasers) are being utilized as high-optical-flux light-emitting devices.

[0004] In addition, the light source unit may also be utilized as a heater module for applying heat to semiconductor equipment, etc. Semiconductor light sources have high thermal density and can generate significant heat associated with high-speed driving and high-output operation. For example, a semiconductor light source device may be used to apply heat to a target object using a VCSEL chip.

[0005] In optical semiconductor devices, if a light-emitting element, such as a VCSEL, is mounted on a ceramic substrate with a coefficient of thermal expansion similar to it, thermal stress can be reduced and a heat dissipation effect can be achieved due to the high thermal conductivity of the ceramic substrate. However, if the heat emission path generated from the light source unit is limited, there are limitations to heat dissipation.

[0006] If the temperature of the light source rises rapidly due to high-power driving, light emission performance deteriorates, leading to reduced reliability and potentially causing serious problems by resulting in driving limitations for the light source. If the heat generation problem is not resolved, it imposes constraints on the design of fine circuit pitches and may become difficult to arrange multiple light sources in high-density arrays, such as hexagonal or grid structures, due to the inability to secure a sufficient fill factor. The background technology mentioned above explains the background in which the present invention was derived and does not imply that it is technology known prior to the filing of the present invention.

[0007] The present invention aims to solve the above problem by providing a light source device capable of effectively dissipating heat generated from a light-emitting element by providing a neutral thermal path in a neutral metalized area that maintains electrical neutrality, and an optical semiconductor device including the same.

[0008] The technical problems to be solved by the embodiments of the present invention are not limited to those described above, and other technical problems can be inferred from the following embodiments.

[0009] A light source device according to an embodiment of the present invention comprises: a substrate having an upper metal wiring disposed on an upper surface and a lower metal wiring disposed on a lower surface, and a through metal via connected between the upper metal wiring and the lower metal wiring; a light-emitting element disposed on the upper surface of the substrate and electrically connected to the upper metal wiring to receive power and configured to emit light upward by the power; a lens disposed on the upper surface of the light-emitting element and configured to concentrate the light emitted from the light-emitting element, or to direct the output direction of the light toward a target direction, or to change the emission distribution of the light; an electrode part comprising a first electrode disposed on one side of the lower surface of the substrate and a second electrode disposed on the other side of the lower surface of the substrate, configured to provide power through the first electrode and the second electrode; and a metal core printed circuit board (MCPCB) disposed on the lower surface of the substrate and having a protrusion protruding toward the lower surface of the substrate within an area that does not overlap with the first electrode and the second electrode in the vertical direction.

[0010] The above protrusion may be positioned between the first electrode and the second electrode based on the horizontal direction.

[0011] A light source device according to an embodiment of the present invention may further include a neutral metal part disposed between the lower surface of the substrate and the protrusion of the MCPCB and configured so that the power is not applied.

[0012] The neutral metal part may include: a neutral metal wiring that overlaps horizontally with the lower metal wiring and overlaps vertically with the protrusion; and a neutral electrode that overlaps horizontally with the metal part and overlaps vertically with the protrusion.

[0013] The above MCPCB may include: a metal core layer; a first insulating layer disposed on one side of the metal core layer; a first metal layer disposed between the first insulating layer and the first electrode; a second insulating layer disposed on the other side of the metal core layer; and a second metal layer disposed between the second insulating layer and the second electrode.

[0014] The above protrusion may protrude from the upper surface of the metal core layer in an area that overlaps with the neutral metal part in the vertical direction.

[0015] The above protrusion may have a thickness equal to the sum of the thicknesses of the first insulating layer and the first metal layer, or a thickness equal to the sum of the thicknesses of the second insulating layer and the second metal layer.

[0016] In a light source device according to an embodiment of the present invention, heat generated from the light-emitting element can be discharged downward through a neutral thermal path including the neutral metal part and the MCPCB.

[0017] A light source device according to an embodiment of the present invention may further include a molding part having a cavity on its upper surface and having light transmittance to light emitted from the light-emitting element.

[0018] The above lens can be bonded to the bottom surface of the cavity by a transparent adhesive layer that is transparent to the light.

[0019] A light source device according to an embodiment of the present invention may further include a cooling unit disposed at the bottom of the MCPCB.

[0020] The above cooling unit may include a metal plate having a cooling passage through which a cooling fluid flows.

[0021] A light source device according to an embodiment of the present invention may further include a metal shield disposed on the substrate and having an opening through which light emitted from the light-emitting element passes.

[0022] A light source device according to an embodiment of the present invention may further include a glass layer disposed between the substrate and the lens, having an air layer between it and the substrate, and having an anti-reflection layer coated on the lower surface in contact with the air layer.

[0023] The area of ​​the above protrusion in the horizontal direction may be larger than that of the light-emitting element.

[0024] The vertical thickness of the above substrate may be 150 μm or more and 800 μm or less, the vertical thickness of the above MCPCB may be 200 μm or more and 10,000 μm or less, and the vertical thickness of the above protrusion may be 25 μm or more and 250 μm or less.

[0025] In addition, according to an embodiment of the present invention, an optical semiconductor device is provided that includes a plurality of light source devices and has a plurality of light source devices arranged in a hexagonal or grid structure.

[0026] According to an embodiment of the present invention, a light source device capable of effectively discharging heat generated from a light-emitting element by providing a neutral thermal path in a neutral metalized area that maintains electrical neutrality, and an optical semiconductor device including the same are provided.

[0027] The effects that the present invention aims to achieve are not limited to those mentioned above, and other unmentioned effects can be clearly understood by those skilled in the art from the description below.

[0028] FIG. 1 is a cross-sectional view showing a light source device according to an embodiment of the present invention.

[0029] FIG. 2 is a plan view showing a light source device according to an embodiment of the present invention.

[0030] FIG. 3 is a cross-sectional view showing a light source device according to another embodiment of the present invention.

[0031] FIGS. 4 and FIGS. 5 are schematic plan views of an optical semiconductor device according to embodiments of the present invention.

[0032] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein.

[0033] It should be noted that the drawings are schematic and not drawn to scale. The relative dimensions and proportions of parts in the drawings are exaggerated or reduced in size for clarity and convenience in the drawings, and any dimensions are merely illustrative and not limiting. Additionally, the same reference numerals are used to denote similar features for the same structure, element, or part appearing in two or more drawings.

[0034] All terms used in this specification are selected for the purpose of further clarifying the invention and are not selected to limit the scope of rights according to the invention. The embodiments of the invention specifically illustrate ideal embodiments of the invention. As a result, various modifications of the illustrations are expected. Accordingly, the embodiments are not limited to specific forms of the illustrated areas and include, for example, modifications of form resulting from manufacturing.

[0035] All technical and scientific terms used in this specification, unless otherwise defined, have the meaning generally understood by those skilled in the art to which the invention pertains. Expressions used in this specification such as 'comprising,' 'comprising,' 'having,' etc., should be understood as open-ended terms implying the possibility of including other embodiments, unless otherwise stated in the phrase or sentence containing such expressions.

[0036] Unless otherwise stated, singular expressions described in this specification may include the meaning of the plural form, and this applies likewise to singular expressions described in the claims. Expressions such as "first," "second," etc., used in this specification are used to distinguish multiple components from one another and do not limit the order or importance of said components. In describing embodiments of the present invention, if it is determined that a detailed description of related known functions or known configurations could unnecessarily obscure the essence of the present invention, such detailed description may be omitted.

[0037] FIG. 1 is a cross-sectional view showing a light source device according to an embodiment of the present invention. FIG. 2 is a plan view showing a light source device according to an embodiment of the present invention. Referring to FIG. 1 and FIG. 2, the light source device (10) according to an embodiment of the present invention is a device that emits light, and can be utilized as a light source that outputs light in various fields, such as, for example, LiDAR, optical communication, and a heater module that applies heat by light output.

[0038] A light source device (10) according to an embodiment of the present invention may include a substrate (100), a light-emitting element (200) disposed on the upper surface of the substrate (100), an electrode portion (300, 400) for applying power to the light-emitting element (200), a neutral metal portion (500, 600) disposed on the lower surface of the substrate (100), a metal core printed circuit board (MCPCB) (700) disposed below the electrode portion (300, 400) and the neutral metal portion (500, 600), a cooling portion (900) disposed below the MCPCB (700), a molding portion (1000) disposed on the substrate (100), a lens (1100) disposed on the molding portion (1000), and a metal shield (1300).

[0039] The substrate (100) may be provided as a ceramic substrate such as AlN, Al2O3, Si3N4, silicon substrate, printed circuit board (PCB), flip chip substrate, etc. The substrate (100) may include, for example, a core substrate (110) made of ceramic, silicon, etc., an upper metal wiring (120, 130) disposed on the upper surface of the core substrate (110), a lower metal wiring (140, 150) disposed on the lower surface of the core substrate (110), and a through metal via (160) disposed through the core substrate (110) to connect the upper metal wiring (120, 130) and the lower metal wiring (140, 150).

[0040] The upper / lower metal wiring (120, 130, 140, 150) and the through metal via (160) may include, for example, a metallic material such as copper, aluminum, tungsten, titanium, cobalt, etc. In this specification, 'metal' (e.g., upper metal wiring, lower metal wiring, through metal via, neutral metal part, metal layer, etc.) may include, for example, one or more conductive materials selected from aluminum, gold, silver, copper, molybdenum, chromium, tantalum, tungsten, titanium, cobalt, or alloys thereof. However, the conductive material corresponding to the metal is not limited thereto.

[0041] A light-emitting element (200) may be placed on the upper surface of a substrate (100). The light-emitting element (200) may be electrically connected to upper metal wiring (120, 130) to receive power. The light-emitting element (200) may emit light upward by the power applied through the upper metal wiring (120, 130).

[0042] The light-emitting element (200) may include semiconductor light source elements such as VCSEL (Vertical Cavity Surface Emitting Laser), LED (Light-Emitting Diode), and EEL (Edge-Emitting Laser). The light-emitting element (200) may be electrically connected to upper metal wiring (120, 130) by wire bonding (121) and / or flip chip bonding, etc.

[0043] When the light-emitting element (200) includes a VCSEL module, the VCSEL module may include a P-type Distributed Bragg Reflector (P-DBR), an N-type Distributed Bragg Reflector (N-DBR), an active layer between the P-type and N-type Distributed Bragg Reflectors, and an insulating layer. The P-type and N-type Distributed Reflectors may form a first reflective surface and a second reflective surface in the VCSEL to confine light inside the resonator.

[0044] The P-type reflective layer may be a reflective layer made of a P-type doped semiconductor, and the N-type reflective layer may be a reflective layer made of an N-type doped semiconductor. The P-type reflective layer and the N-type reflective layer may be made of a high-reflectivity material (e.g., AlGaAs), or provided as a multilayer structure formed by alternately stacking two materials with different refractive indices (e.g., AlGaAs, GaAs) to obtain high reflectivity.

[0045] The active layer may be a cavity layer that emits light due to electron-hole recombination and resonance. The active layer may be provided as a Multiple Quantum Wells (MQW) structure in which well layers and barrier layers with different energy bands are alternately stacked one or more times. The well layers and barrier layers of the active layer may be formed from compound semiconductors such as InGaAs / AlGaAs, InGaAs / GaAs, or GaAs / AlGaAs.

[0046] The insulating layer can serve the roles of electrical insulation between the upper and lower electrodes of the VCSEL, surface flattening, and thermal management. The insulating layer may be composed of, for example, benzocyclobutene (BCB). BCB is a thermosetting polymer material that has a low dielectric constant and excellent thermal stability, so it can relieve mechanical stress and prevent electrical leakage in the VCSEL structure. The VCSEL module described above has been described as an example of a light-emitting element (200), but the light-emitting element (200) is not limited thereto and various light-emitting elements capable of emitting light may be applied.

[0047] The electrode portion (300, 400) may include a first electrode (300) disposed on one side of the lower surface of the substrate (100) and a second electrode (400) disposed on the other side of the lower surface of the substrate (100). The electrode portion (300, 400) may provide power to a light-emitting element (200) through the first electrode (300) and the second electrode (400).

[0048] The first electrode (300) may be either a cathode electrode or an anode electrode. If the first electrode (300) is a cathode electrode, the second electrode (400) may be an anode electrode. If the first electrode (300) is an anode electrode, the second electrode (400) may be a cathode electrode. The first electrode (300) and / or the second electrode (400) may include a metallic material such as copper, aluminum, tungsten, titanium, or cobalt.

[0049] The neutral metal portion (500, 600) may be placed between the lower surface of the substrate (100) and the MCPCB (700). The neutral metal portion (500, 600) may receive heat emitted from the light source unit (20) and transfer it to the metal core of the MCPCB (700). The neutral metal portion (500, 600) may be placed in a neutral metalized area where no power is applied. The neutral metal portion (500, 600) may include a metallic material such as copper, aluminum, tungsten, titanium, or cobalt.

[0050] The neutral metal section (500, 600) may include a neutral metal wiring (500) and a neutral electrode (600). The neutral metal wiring (500) may overlap horizontally with the lower metal wiring (140, 150). The neutral metal wiring (500) may not be electrically connected to the upper / lower metal wiring (120, 130, 140, 150).

[0051] Preferably, the neutral metal wiring (500) can be placed simultaneously with the lower metal wiring (140, 150) during the process in which the lower metal wiring (140, 150) is placed on the lower surface of the substrate (100). Accordingly, the lower metal wiring (140, 150) and the neutral metal wiring (500) can be formed from the same metal material by the same process and can be formed to have the same thickness.

[0052] Accordingly, the neutral metal wiring (500) can be formed using the process of arranging the lower metal wiring (140, 150) without the need to perform a separate process to form the neutral metal wiring (500), thereby reducing the process cost and shortening the process time for forming the neutral thermal path.

[0053] The neutral electrode (600) can be overlapped horizontally with the electrode portions (300, 400). Preferably, the neutral electrode (600) can be placed simultaneously with the first electrode (300) and the second electrode (400) during the process in which the first electrode (300) and the second electrode (400) are placed on the lower surface of the substrate (100). Accordingly, the electrode portions (300, 400) and the neutral electrode (600) can be formed from the same metal material by the same process and can be formed to have the same thickness.

[0054] In addition, since the neutral electrode (600) can be formed using a process of placing an anode electrode and / or a cathode electrode without the need to perform a separate process to form the neutral electrode (600), the process cost for forming the neutral thermal path can be reduced and the process time can be shortened.

[0055] In addition, by forming a neutral metal portion (500, 600) on the lower part of the substrate (100), the height (vertical thickness) of the protrusion (712) of the MCPCB (700) can be reduced, and the process cost for etching the surrounding area of ​​the protrusion (712) can be reduced and the process time shortened.

[0056] The MCPCB (700) can be placed on the underside of the substrate (100) and the neutral metal part (500, 600). The MCPCB (700) is a PCB structure containing a metal (e.g., aluminum or copper) core, and has the advantages of high thermal conductivity compared to general PCBs such as FR-4, as well as excellent mechanical rigidity and high power performance.

[0057] The MCPCB (700) may be provided with a structure in which an insulating layer is disposed between upper / lower circuit layers, such as a copper foil layer, and a metal core. The insulating layer may be an insulating material with excellent thermal conductivity, such as ceramic-filled epoxy, Al2O3, BN, AlN, etc. The MCPCB (700) may be directly metal-bonded to the neutral metal portion (500, 600) at the bottom of the substrate (100). Accordingly, the heat transfer performance along the heat dissipation path between the neutral metal portion (500, 600) and the MCPCB (700) can be improved, thereby improving the heat dissipation effect.

[0058] The MCPCB (700) has a protrusion (712) that protrudes toward the lower surface of the substrate (100) within an area that does not overlap with the first electrode (300) and the second electrode (400) in the vertical direction (third direction, Z). The protrusion (712) may be positioned between the first electrode (300) and the second electrode (400) with respect to the horizontal direction (X). The protrusion (712) may be formed such that its central axis coincides with the central axis of the light-emitting element (200).

[0059] The area of ​​the protrusion (712) affects the heat dissipation performance. Preferably, the protrusion (712) may have a width of at least 50%, more preferably at least 70%, of the gap between the first electrode (300) and the second electrode (400) in the horizontal direction. If the protrusion (712) is too close to the first electrode (300) and / or the second electrode (400), the protrusion (712) may affect the power supply or signal, so the protrusion (712) needs to be spaced apart from the first electrode (300) and / or the second electrode (400).

[0060] Preferably, the protrusion (712) may be spaced horizontally from the first electrode (300) and / or the second electrode (400) by a distance of at least 5%, more preferably at least 10%, of the distance between the first electrode (300) and the second electrode (400). By the neutral metal part (500, 600) and the protrusion (712), a neutral heat path can be formed in which efficient heat dissipation is performed without electrical interference.

[0061] Preferably, the protrusion (712) may be formed to have the same width / area in the horizontal direction as the neutral metal part (500, 600). To improve heat dissipation performance, the area and / or width (W2) of the protrusion (712) in the horizontal direction may be larger than the area and / or width (W1) of the light-emitting element (200). The area and / or width (W2) of the protrusion (712) in the horizontal direction may be larger than the area and / or width of the first electrode (300) (or second electrode (400)).

[0062] Preferably, the vertical thickness (T1) of the substrate (100) may be about 150 μm to 800 μm. Preferably, the total vertical thickness (T2 + T3) of the MCPCB (700) may be about 200 μm to 10,000 μm. To ensure efficient heat dissipation performance, it may be preferable for the protrusion (712) to have a thickness (T3) in the vertical direction of about 25 μm to 250 μm.

[0063] In an embodiment of the present invention, the MCPCB (700) may include a metal core layer (711), a first insulating layer (730) disposed on one side of the metal core layer (711), a first metal layer (720) disposed between the first insulating layer (730) and the first electrode (300), a second insulating layer (750) disposed on the other side of the metal core layer (711), a second metal layer (740) disposed between the second insulating layer (750) and the second electrode (400), and a protrusion (712) protruding from the upper surface of the metal core layer (711) in an area that overlaps in the vertical direction with the neutral metal portion (500, 600).

[0064] The metal core layer (711) and the protrusion (712) may be formed from a single metal material to constitute the metal core substrate layer (710). The first insulating layer (730) and the second insulating layer (750) may overlap each other in the horizontal direction but not overlap in the vertical direction. The first metal layer (720) and the second metal layer (740) may overlap each other in the horizontal direction but not overlap in the vertical direction. The first metal layer (720) and the first insulating layer (730) may be formed with a width (or area) greater than that of the first electrode (300) in the horizontal direction. The second metal layer (740) and the second insulating layer (750) may be formed with a width (or area) greater than that of the second electrode (400) in the horizontal direction.

[0065] The first insulating layer (730) and / or the second insulating layer (750) may include an inorganic insulating material and / or an organic insulating material. The first insulating layer (730) and / or the second insulating layer (750) may include, for example, SiO2, SiNx, Si3N4, Al2O3, HfO2, ZrO2, TiO2, MgO, ITO, ZnO, borosilicate glass, aluminosilicate glass, quartz, polyimide-based materials, PBO (Polybenzoxazole), BCB (Benzocyclobutene), epoxy, acrylic, urethane-based materials, PDMS, PMMA, polysilazane, nanofiber insulating materials, etc.

[0066] A neutral metal portion (500, 600) may be placed between the lower surface of the substrate (100) and the protrusion (712). The neutral metal wiring (500) and / or neutral electrode (600) may overlap with the protrusion (712) in the vertical direction. The protrusion (712) may have a thickness equal to the sum of the thicknesses of the first insulating layer (730) and the first metal layer (720), or a thickness equal to the sum of the thicknesses of the second insulating layer (750) and the second metal layer (740).

[0067] In the light source device (10) according to an embodiment of the present invention, heat generated from a light source unit (20) including a light-emitting element (200) can be efficiently discharged downward through a neutral thermal path including a neutral metal part (500, 600) and an MCPCB (700).

[0068] In the light source device (10) according to an embodiment of the present invention, a neutral metal wiring (500), a neutral electrode (600), and an MCPCB (700) are arranged in a metal-metal-metal junction structure at the center where heat is intensively emitted from the light source unit (20), so that heat can be effectively emitted through a neutral thermal path having high thermal conductivity. In addition, since no dielectric material is interposed at the bottom of the light source unit (20) at the center that overlaps with the light-emitting element (200) in the vertical direction, the thermal resistance is very low, and thus the heat dissipation efficiency can be improved.

[0069] The cooling section (900) may be positioned at the bottom of the MCPCB (700). The cooling section (900) may be positioned to be bonded to the lower surface of the metal layer (800) provided at the bottom of the MCPCB (700). Since the cooling section (900) is bonded by the metal layer (800) rather than by solder / grease, it can prevent an increase in thermal resistance and improve heat dissipation performance. The cooling section (900) may include a metal plate (910) having a cooling passage (911) through which a cooling fluid flows.

[0070] The metal plate (910) can be formed from a metal of the same material as the MCPCB (700). Accordingly, the thermal interface material (TIM) created by brazing / welding can be minimized to improve heat dissipation performance. The metal plate (910) may be provided with an inlet (913) through which a cooling fluid flows into a cooling passage (911) and an outlet (914) through which the cooling fluid is discharged from the cooling passage (911).

[0071] Additionally, the cooling plate (910) may be equipped with metal fins (912) for efficient cooling in the cooling passages (911) of the cooling chamber. As a cooling fluid, deionized water, glycol cooling liquid, silicone oil, fluorine-based cooling liquid, etc. may be used, but are not limited thereto. The cooling unit (900) may be implemented as a passive air-cooled heat sink rather than an active cooling system.

[0072] The molding portion (1000) may be transparent to light emitted from the light-emitting element (200). Transparency may mean that the light transmittance is 80% or more, and more preferably, that the light transmittance is 90% or more. The molding portion (1000) may include a molding layer (1010) covering the light-emitting element (200).

[0073] The molding layer (1010) may include, for example, a silicone material. The molding layer (1010) may have a cavity (1012) on its upper surface (1011). The bottom surface of the cavity (1012) may have a lower height than the upper surface surrounding the cavity (1012) of the molding layer (1010). The cavity (1012) may have a width greater than that of the light-emitting element (200) in the horizontal direction.

[0074] The cavity (1012) may have the same width as the lens (1100) in the horizontal direction or a greater width. The cavity (1012) may be formed to have a shape corresponding to the bottom surface of the light source. To minimize optical loss, the cavity (1012) may be designed to align the position of the bottom surface of the lens (1100) with the central axis of the light source.

[0075] One or more lenses (1100) may be placed on the upper part of the light-emitting element (200). The lenses (1100) can concentrate light emitted from the light-emitting element (200), direct the output direction of the light toward a target direction, or change the light emission distribution. Preferably, the lenses (1100) may be glass-based inorganic lenses having high-temperature stability so that light distribution control is possible without deformation even in a high-temperature environment of about 150°C or higher.

[0076] The lens (1100) can be bonded onto the bottom surface of the cavity (1012) by a transparent adhesive layer (1200) that is transparent to light. The transparent adhesive layer (1200) can be provided as a photosensitive material capable of photocuring and / or heat curing to bond the lens (1100) onto the molding part (1000).

[0077] The transparent adhesive layer (1200) may be applied, for example, silicone, UV-curing acrylic adhesive, epoxy transparent adhesive, glass frit bonding layer, etc., but is not limited thereto. Alternatively, the lens (1100) may be attached to the molding part (1000) by a coupling part (not shown) provided as a socket-type coupling structure (a structure for coupling / uncoupling by inserting or removing a locking device), a detachable plug-in structure, or various other coupling structures.

[0078] The lens (1100) can be manufactured by processes such as molding, imprinting, or lithography etching using a mask. The lens (1100) can be made of, for example, a material having a refractive index of 1.2 or higher and 2 or lower, and more preferably can be formed of a material having a refractive index of 1.5 or higher.

[0079] The lens (1100) may be formed from at least one material among glass, ceramic, and polymer that is transparent. The lens (1100) may be, for example, a convex lens. The lens (1100) may be positioned so that its central axis coincides with the central axis of the light-emitting element (200). The lens (1100) may have a flat bottom surface and an upwardly convex curved top surface.

[0080] A metal shield (1300) may be placed on a substrate (100). The metal shield (1300) may function to prevent electrical interference (EMI, Electromagnetic Interference) and optical disturbances. The metal shield (1300) may have an opening (1310) through which light emitted from a light-emitting element (200) passes. The opening (1310) may have the same width as the lens (1100) in the horizontal direction or a wider width. The opening (1310) may have the same width as the cavity (1012) in the horizontal direction or a narrower width.

[0081] A light source device according to an embodiment of the present invention as described above is provided with a neutral thermal path in a neutral metalized area that maintains electrical neutrality, so that heat generated from a light source unit (20) including a light-emitting element (200) can be effectively discharged downward.

[0082] Accordingly, performance degradation due to overheating of the light source device can be prevented, and even when using high-output light-emitting elements, heat can be efficiently dissipated to ensure light output reliability. In addition, multiple light source units can be compactly designed in a hexagonal or grid structure, allowing for the miniaturization of the optical semiconductor device and the improvement of light output per unit area.

[0083] Optical semiconductor devices can be manufactured by well-known semiconductor processes. Optical semiconductor devices can be manufactured, for example, by physical vapor deposition (PVD) such as photolithography and sputtering, chemical vapor deposition (CVD), wet etching, dry etching using plasma or reactive gas, ion implantation, annealing, wire bonding, flip-chip bonding, etc. Since the manufacturing process of optical semiconductor devices can be manufactured using generally known semiconductor processes, a detailed description thereof will be omitted.

[0084] FIG. 3 is a cross-sectional view showing a light source device according to another embodiment of the present invention. In describing the light source device according to the embodiment of FIG. 3, redundant descriptions of components identical or corresponding to those described in the previously described embodiment will be omitted as much as possible, and the description will focus on the parts that differ.

[0085] The light source device (10) according to the embodiment of FIG. 3 differs from the previously described embodiment in that a glass layer (1001) is disposed between a substrate (100) and a lens (1100), an air layer (1002) is provided between the glass layer (1001) and the substrate (100), and an anti-reflection layer is coated on the lower surface of the glass layer (1001) that is in contact with the air layer (1002).

[0086] The anti-reflective layer can function to reduce light reflection and increase transmittance. The anti-reflective layer can be formed by refractive index matching, the application of a quarter wavelength interference layer, or a multilayer reflective coating layer. The anti-reflective layer may include, but is not limited to, magnesium fluoride, silica, alumina, hafnium oxide, titanium oxide, silicon nitride, etc.

[0087] FIGS. 4 and 5 are schematic plan views of an optical semiconductor device according to embodiments of the present invention. The optical semiconductor device (30) may include a plurality of light source devices. The plurality of light source devices may be arranged in a hexagonal or grid structure.

[0088] That is, the light source units (20) constituting the light source device can be arranged in a hexagonal or grid structure. As the light source units (20) are arranged in a hexagonal or grid structure, the density of light can be improved and the optical semiconductor device (30) can be miniaturized.

[0089] Various embodiments of the present invention, including specific structural and functional details, are exemplary. Accordingly, embodiments of the present invention are not limited to those described above and may be implemented in various other forms. Furthermore, the terms used in the present invention are intended to describe some embodiments and are not to be interpreted as limiting the embodiments. For example, singular words and the phrase "above" may be interpreted to include plural forms unless the context clearly indicates otherwise. Embodiments of the present invention may be implemented by combining components of different embodiments, provided they are not arranged with one another.

[0090] In this invention, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which such concepts belong. Furthermore, commonly used terms, such as those defined in advance, should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology.

[0091] Although the present invention has been described in relation to some embodiments, various modifications and changes may be made without departing from the scope of the invention as understood by a person skilled in the art to which the invention pertains. Furthermore, such modifications and changes should be considered to fall within the scope of the claims appended to this specification.

Claims

1. A substrate having an upper metal wiring disposed on an upper surface and a lower metal wiring disposed on a lower surface, and a through metal via connecting the upper metal wiring and the lower metal wiring; A light-emitting element disposed on the upper surface of the substrate, electrically connected to the upper metal wiring to receive power, and configured to emit light upward by the power; A lens positioned above the light-emitting element and configured to concentrate light emitted from the light-emitting element, direct the output direction of the light toward a target direction, or change the light emission distribution; An electrode portion comprising a first electrode disposed on one side of the lower surface of the substrate and a second electrode disposed on the other side of the lower surface of the substrate, configured to provide power through the first electrode and the second electrode; and A metal core printed circuit board (MCPCB) disposed on the lower part of the substrate and having a protrusion protruding toward the lower surface of the substrate within an area that does not overlap in the vertical direction with the first electrode and the second electrode; A light source device including 2. In Claim 1, The above-mentioned protrusion is a light source device positioned between the first electrode and the second electrode with respect to the horizontal direction.

3. In Claim 1, A neutral metal part disposed between the lower surface of the substrate and the protrusion of the MCPCB, configured so that the power is not applied; A light source device further comprising 4. In Claim 3, The above neutral metal part Neutral metal wiring that overlaps horizontally with the lower metal wiring and overlaps vertically with the protrusion; and A neutral electrode that overlaps horizontally with the electrode portion and overlaps vertically with the protrusion portion; A light source device including 5. In Claim 3, The above MCPCB is Metal core layer; A first insulating layer disposed on one side of the metal core layer; A first metal layer disposed between the first insulating layer and the first electrode; A second insulating layer disposed on the other side of the metal core layer; and A second metal layer disposed between the second insulating layer and the second electrode; comprising A light source device in which the above-mentioned protrusion protrudes from the upper surface of the metal layer in an area that overlaps vertically with the above-mentioned neutral metal part.

6. In Claim 5, A light source device having a protrusion having a thickness equal to the sum of the thicknesses of the first insulating layer and the first metal layer, or a thickness equal to the sum of the thicknesses of the second insulating layer and the second metal layer.

7. In Claim 3, A light source device in which heat generated from the light-emitting element is discharged downward through a neutral thermal path including the neutral metal part and the MCPCB.

8. In Claim 1, It further includes a molding part having transparency to light emitted from the light-emitting element and having a cavity on its upper surface. A light source device in which the above lens is bonded to the bottom surface of the cavity by a transparent adhesive layer having light transmittance to the above light.

9. In Claim 1, A light source device further comprising a cooling unit disposed at the bottom of the above MCPCB.

10. In Claim 9, The above-described cooling unit comprises a metal plate having a cooling passage through which a cooling fluid flows, in a light source device.

11. In Claim 1, A metal shield disposed on the substrate and having an opening through which light emitted from the light-emitting element passes; A light source device further comprising 12. In Claim 1, A glass layer disposed between the substrate and the lens, having an air layer between it and the substrate, and having an anti-reflection layer coated on the lower surface in contact with the air layer; A light source device including additional 13. In Claim 1, A light source device in which the area of ​​the above-mentioned protrusion in the horizontal direction is larger than that of the light-emitting element.

14. In Claim 1, The vertical thickness of the above substrate is 150 μm or more and 800 μm or less, and The vertical thickness of the above MCPCB is 200 μm or more and 10,000 μm or less, and The vertical thickness of the above protrusion is 25 μm or more and 250 μm or less, Light source device.

15. An optical semiconductor device comprising a plurality of light source devices of Claim 1, wherein the plurality of light source devices are arranged in a hexagonal or grid structure.

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