Method for transferring an active GAN region onto a receiver substrate

The donor substrate with doped and active GaN regions addresses the inefficiencies of the Smart Cut™ process by confining defects with reduced hydrogen doses, ensuring efficient and cost-effective GaN layer transfer with maintained crystalline quality.

WO2026132190A1PCT designated stage Publication Date: 2026-06-25SOITEC SA +1
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
SOITEC SA
Filing Date
2025-12-18
Publication Date
2026-06-25

AI Technical Summary

Technical Problem

The existing Smart Cut™ process for transferring GaN layers requires high doses of atomic species for defect creation, leading to long implantation times, significant energy consumption, and environmental impact, making it incompatible with industrial-scale manufacturing, while also causing stress on the GaN crystal lattice.

Method used

A donor substrate with alternating doped and active GaN regions, using dopants like magnesium, silicon, or carbon to form complexes with hydrogen atoms, allowing for localized embrittlement zone creation with reduced hydrogen doses, thus confining defects and maintaining crystalline quality.

Benefits of technology

Enables efficient and cost-effective transfer of GaN layers with improved crystalline quality by reducing hydrogen doses and minimizing stress on the GaN crystal lattice, suitable for industrial-scale manufacturing.

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Abstract

The present invention relates to a method for transferring an active GaN region onto a receiver substrate, comprising: - the provision of a donor substrate comprising a support substrate (10, 50) and a GaN layer having: - a doped region (30), referred to as confinement region, containing dopants which are suitable for forming complexes with hydrogen atoms (H), and - a region (40), referred to as active region, extending over the confinement region (30) on the opposite side to the support substrate (10), - the implantation of hydrogen in the doped region (30) in order to form a weakened zone (31), the dopants forming complexes with hydrogen atoms (H) so that the defects generated by said implantation are confined within the doped region (30), - the bonding of the active region (40) to the receiver substrate (60), - the detachment of the donor substrate along the weakened zone (31).
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