Plating method and plating device

Abstract

Provided is technology enabling film thickness to be made uniform.　This plating method includes: supply processing (S5) in which a substrate is supplied to a plating bath in which an anode and an intermediate member are disposed. The substrate is supplied to a location not in contact with the intermediate member. The substrate has a pattern formation region where a plurality of patterns are formed. The contour shape of the pattern formation region is non-circular. The intermediate member includes, in plan view, a hole formation region where a plurality of holes through which a plating liquid can pass are formed, and an electric field shielding region disposed around the hole formation region. The contour shape of the hole formation region corresponds to the contour shape of the pattern formation region. The plating method also includes: alignment processing (S10) in which the position of the substrate is adjusted so that the contour shape of the pattern formation region and the contour shape of the hole formation region are spatially aligned; and first energization processing (S20) in which the anode and the substrate are energized while the substrate is made to move in a swinging rotational motion.

Description

Plating method and plating apparatus

[0001] The present invention relates to a plating method and a plating apparatus.

[0002] Conventionally, a plating apparatus capable of performing a plating process on a substrate has been known (see, for example, Patent Document 1). Specifically, in the plating apparatus exemplified in this Patent Document 1, an anode is disposed inside a plating tank in which a plating solution is stored, a substrate as a cathode is disposed above the anode, an ion resistor is disposed between the anode and the substrate, and an electric field shielding member is disposed between the ion resistor and the substrate.

[0003] Japanese Unexamined Patent Application Publication No. 2022-59561

[0004] By the way, as a substrate on which a plating process is performed, a substrate having a non-circular contour shape of a pattern formation region of the substrate may be used. A plating method capable of achieving uniform thickness (film thickness) of a plating film formed on such a substrate has not been sufficiently developed so far.

[0005] The present invention has been made in view of the above, and one of its objects is to provide a technique capable of achieving uniform film thickness.

[0006] (Aspect 1) To achieve the above objective, a plating method according to one aspect of the present invention is a supply process for supplying a substrate to a plating tank in which an anode and an intermediate member are arranged, wherein the intermediate member is arranged between the anode and the substrate supplied to the plating tank, the substrate is supplied to a location that does not come into contact with the intermediate member, the substrate has a pattern forming region in which a plurality of patterns are formed, the contour shape of the pattern forming region is non-circular, the intermediate member has, in plan view, a hole forming region in which a plurality of holes through which a plating solution can pass are formed, and an electric field shielding region arranged around the hole forming region, the contour shape of the hole forming region is the same as that of the pattern forming region The first energizing process includes: a supply process corresponding to the contour shape; an alignment process for adjusting the position of the substrate so that the contour shape of the pattern forming region and the contour shape of the hole forming region are spatially aligned; and a first energizing process for energizing the anode and the substrate while causing the substrate to undergo a fluctuating rotational motion, wherein the substrate, during the fluctuating rotational motion, rotates by a first angle in a first rotational direction and rotates by a second angle in a second rotational direction opposite to the first rotational direction at least once, with respect to the state in which the contour shape of the pattern forming region is aligned with the contour shape of the hole forming region.

[0007] (Aspect 2) In aspect 1 above, the first angle may be 45° or less, and the second angle may be 45° or less.

[0008] (Aspect 3) In aspect 1 or 2 above, the contour shape of the pattern forming region may be configured such that it appears the same shape before and after rotation when the substrate is rotated by an angle of rotational symmetry of less than 360°.

[0009] (Aspect 4) In the above-described aspect 3, the plating method may further include a rotation process in which, after the first energizing process, the substrate is rotated by the rotational symmetry angle while the energizing of the anode and the substrate is stopped, and a second energizing process in which, after the rotation process, the substrate is subjected to the fluctuating rotational motion while the anode and the substrate are energized.

[0010] (Aspect 5) In aspect 4, after the execution of the second energizing process, the series of processes having the rotation process and the second energizing process may be executed at least once further.

[0011] (Aspect 6) In aspect 5 described above, the series of processes may be executed multiple times.

[0012] (Aspect 7) In the above aspect 6, in the rotation process which is performed multiple times, the direction of rotation of the substrate in the rotation process performed at any time and the direction of rotation of the substrate in the next rotation process may be in opposite directions.

[0013] (Aspect 8) In the above aspect 6, in the rotation process that is performed multiple times, the direction of rotation of the substrate in the rotation process performed at any time and the direction of rotation of the substrate in the next rotation process may be the same.

[0014] (Aspect 9) In any one of the above aspects 4 to 8, the rotational speed of the substrate in the fluctuation rotational motion and the rotational speed of the substrate in the rotational process may be the same value.

[0015] (Aspect 10) In any one of the above aspects 4 to 8, the rotational speed of the substrate in the fluctuating rotational motion and the rotational speed of the substrate in the rotational processing may be different values.

[0016] (Aspect 11) In aspect 10 above, the rotational speed of the substrate in the fluctuating rotational motion may be slower than the rotational speed of the substrate in the rotational process.

[0017] (Aspect 12) In any one aspect of aspects 1 to 11 described above, the intermediate member may have an ion resistor having the hole-forming region and the electric field shielding region.

[0018] (Aspect 13) In any one aspect of aspects 1 to 11 above, the intermediate member comprises an ion resistor having a plurality of holes and an electric field shielding member having an opening, positioned above the ion resistor, wherein the electric field shielding region is comprised of the region surrounding the opening of the electric field shielding member, the hole-forming region is comprised of the region of the ion resistor having a plurality of holes located inside the opening of the electric field shielding member in a plan view, and the contour shape of the hole-forming region may be comprised of the contour of the opening of the electric field shielding member.

[0019] (Aspect 14) To achieve the above objective, a plating apparatus according to one aspect of the present invention includes a control module configured to perform the supply process, the alignment process, and the first energization process described in any one of aspects 1 to 13 above.

[0020] According to the above embodiment, uniformity of film thickness can be achieved.

[0021] This is a perspective view showing the overall configuration of the plating apparatus according to the embodiment. This is a plan view showing the overall configuration of the plating apparatus according to the embodiment. This is a schematic diagram showing the configuration of the plating module according to the embodiment. This is a schematic diagram showing the state in which the substrate according to the embodiment is immersed in the plating solution. This is a schematic plan view of the substrate according to the embodiment. This is a schematic plan view of the intermediate member according to the embodiment. This is an example of a flowchart of the plating method according to the embodiment. This is an example of a timing chart of the plating method according to the embodiment. This is an illustrative image showing the state in which the contour shape of the pattern formation area of ​​the substrate according to the embodiment is aligned with the contour shape of the hole formation area of ​​the intermediate member. This is a schematic diagram illustrating the state in which the substrate according to the embodiment is undergoing fluctuating rotational motion. This is a schematic diagram for explaining the effects of the fluctuating rotational motion according to the embodiment. This is a schematic cross-sectional view of the intermediate member according to Modification 1. This is a schematic plan view of the electric field shielding member according to Modification 1. This is a schematic diagram for explaining an example of a configuration in which the position of the electric field shielding member according to Modification 1 can be changed. This is an example of a timing chart when the substrate rotates in the same direction during the rotation process according to the embodiment. This is an example of a timing chart when the rotation speed of the substrate in the fluctuating rotational motion according to the embodiment and the rotation speed of the substrate in the rotation process are different. This is an example of a timing chart for a plating method according to Modification 2. Figure 18 is a schematic plan view of an intermediate member according to a comparative example. Figure 19 is a schematic plan view to illustrate the film thickness distribution of a substrate. Figure 20(A) is a schematic cross-sectional view of an enlarged view of the surface portion of the pattern formation region of a substrate. Figure 20(B) is a schematic cross-sectional view illustrating the formation of a plating film in the pattern formation region. This is a schematic plan view to illustrate another example of a substrate.

[0022] Embodiments of the present invention will be described below with reference to the drawings. Note that the drawings are schematic in order to facilitate understanding of the characteristics of the components, and the dimensional ratios of each component may not be the same as those of the actual components. Also, some drawings show the X-Y-Z Cartesian coordinate system for reference. In this Cartesian coordinate system, the Z direction corresponds to upward, and the -Z direction corresponds to downward (the direction in which gravity acts).

[0023] Figure 1 is a perspective view showing the overall configuration of the plating apparatus 1000 of this embodiment. Figure 2 is a plan view (specifically a top view) showing the overall configuration of the plating apparatus 1000 of this embodiment. As shown in Figures 1 and 2, the plating apparatus 1000 includes a load port 100, a transport robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transport device 700, and a control module 800.

[0024] The load port 100 is a module for loading substrates contained in cassettes such as FOUPs (not shown) into the plating apparatus 1000, and for unloading substrates from the plating apparatus 1000 into cassettes. In this embodiment, four load ports 100 are arranged horizontally, but the number and arrangement of load ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates and is configured to transfer substrates between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600. When transferring substrates between the transport robot 110 and the transport device 700, the substrates can be transferred via a temporary stand (not shown).

[0025] The aligner 120 is a module for aligning the positions of orientation flats, notches, etc., on the substrate in a predetermined direction. In this embodiment, two aligners 120 are arranged side by side horizontally, but the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 replaces the air inside the patterns formed on the substrate surface with a treatment solution by wetting the surface of the substrate to be plated with a treatment solution such as pure water or degassed water before the plating process. The pre-wet module 200 is configured to perform a pre-wetting process that makes it easier to supply the plating solution inside the patterns by replacing the treatment solution inside the patterns with the plating solution during plating. In this embodiment, two pre-wet modules 200 are arranged side by side vertically, but the number and arrangement of the pre-wet modules 200 are arbitrary.

[0026] The pre-soak module 300 is configured to perform a pre-soak treatment, which involves etching away an oxide film with high electrical resistance present on the surface of a seed layer formed on the surface of a substrate to be plated before plating, using a treatment solution such as sulfuric acid or hydrochloric acid, thereby cleaning or activating the surface of the substrate. In this embodiment, two pre-soak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary. The plating module 400 performs the plating treatment on the substrate. In this embodiment, there are two sets of 12 plating modules 400, arranged in a vertical direction of three modules and horizontal direction of four modules, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0027] The cleaning module 500 is configured to clean the substrate to remove any remaining plating solution after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate after the cleaning process by rotating it at high speed. In this embodiment, two spin rinse dryers 600 are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers 600 are arbitrary. The transport device 700 is a device for transporting substrates between multiple modules in the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000 and can consist of, for example, a general-purpose computer or a dedicated computer with an input / output interface with an operator.

[0028] An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, substrates contained in cassettes are loaded into the load port 100. Next, the transport robot 110 removes the substrates from the cassettes in the load port 100 and transports them to the aligner 120. The aligner 120 aligns the orientation flats, notches, and other positions of the substrates to a predetermined direction. The transport robot 110 then transfers the substrates, whose orientation has been aligned by the aligner 120, to the pre-wet module 200.

[0029] The pre-wetting module 200 performs a pre-wetting treatment on the substrate. The transport device 700 transports the pre-wetting substrate to the pre-soak module 300. The pre-soak module 300 performs a pre-soak treatment on the substrate. The transport device 700 transports the pre-soaked substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0030] The transport device 700 transports the plated substrate to the cleaning module 500. The cleaning module 500 cleans the substrate. The transport device 700 then transports the cleaned substrate to the spin rinse dryer 600. The spin rinse dryer 600 dries the substrate. The transport robot 110 receives the substrate from the spin rinse dryer 600 and transports the dried substrate to the cassette in the load port 100. Finally, the cassette containing the substrate is discharged from the load port 100.

[0031] The configuration of the plating apparatus 1000 described in Figures 1 and 2 is merely an example, and the configuration of the plating apparatus 1000 is not limited to the configurations shown in Figures 1 and 2.

[0032] Next, the plating module 400 will be described. Since the multiple plating modules 400 in the plating apparatus 1000 according to this embodiment have similar configurations, only one plating module 400 will be described.

[0033] Figure 3 is a schematic diagram showing the configuration of the plating module 400 in the plating apparatus 1000 according to this embodiment. Specifically, Figure 3 schematically illustrates the plating module 400 before the substrate Wf is immersed in the plating solution Ps. Figure 4 is a schematic diagram showing the state after the substrate Wf has been immersed in the plating solution Ps.

[0034] The plating apparatus 1000 illustrated in Figures 3 and 4 is, as an example, a type of plating apparatus (a so-called cup-type plating apparatus) in which the substrate Wf is immersed in the plating solution Ps with its surface direction oriented horizontally.

[0035] The plating module 400 of the plating apparatus 1000 illustrated in Figures 3 and 4 comprises a plating tank 10, an overflow tank 20, and a substrate holder 30. Furthermore, the plating module 400 according to this embodiment, as illustrated in Figure 3, comprises a rotating mechanism 40, a tilting mechanism 45, and a lifting mechanism 50.

[0036] The plating tank 10 according to this embodiment is composed of a bottomed container with an opening at the top. Specifically, the plating tank 10 has a bottom wall 10a and an outer peripheral wall 10b that extends upward from the outer peripheral edge of the bottom wall 10a, with the upper part of the outer peripheral wall 10b being open. The shape of the outer peripheral wall 10b of the plating tank 10 is not particularly limited, but the outer peripheral wall 10b according to this embodiment has a cylindrical shape as an example. A plating solution Ps is stored inside the plating tank 10.

[0037] The plating solution Ps can be any solution containing ions of the metal elements that constitute the plating film, and its specific examples are not particularly limited. In this embodiment, copper plating is used as an example of a plating process, and copper sulfate solution is used as an example of the plating solution Ps. The plating solution Ps may also contain predetermined additives.

[0038] An anode 11 is placed inside the plating tank 10. The specific type of anode 11 is not particularly limited and may be an insoluble anode or a soluble anode. In this embodiment, an insoluble anode is used as an example of anode 11. The specific type of this insoluble anode is not particularly limited and can be platinum, iridium oxide, or the like.

[0039] Furthermore, during the plating process, the substrate Wf, which serves as the cathode, is positioned above the anode 11 inside the plating tank 10 (see Figure 4).

[0040] As illustrated in Figure 4, the anode 11 and the substrate Wf are electrically connected to the power supply device 18. This power supply device 18 is controlled by a control module 800, which will be described later, to start and stop the supply of power to the anode 11 and the substrate Wf (i.e., start and stop the power supply). The specific configuration of the power supply device 18 is not particularly limited, but for example, it includes a power supply and a switch for starting and stopping the power supply from the power supply.

[0041] Furthermore, during the plating process, an intermediate member 60 is positioned between the anode 11 and the substrate Wf inside the plating tank 10. As illustrated in Figures 3 and 4, the intermediate member 60 according to this embodiment is positioned in the plating tank 10 in a manner that does not contact the anode 11 or the substrate Wf (in a non-contact state). It is preferable that during the plating process, the center position of the substrate Wf held by the substrate holder 30 coincides with the center position of the intermediate member 60 positioned in the plating tank 10. It is also preferable that the substrate Wf and the intermediate member 60 are parallel during the plating process. Details of the configuration of the intermediate member 60 will be described later.

[0042] The specific value of the distance between the intermediate member 60 and the substrate Wf during the plating process is not particularly limited, but for example, any value within 50 mm, specifically any value within 40 mm, specifically any value within 30 mm, or specifically any value within 15 mm can be used. When a paddle 70 is placed between the intermediate member 60 and the substrate Wf, it is preferable to set the distance between the intermediate member 60 and the substrate Wf so that the paddle 70 does not come into contact with the intermediate member 60 and the substrate Wf.

[0043] As illustrated in FIGS. 3 and 4, inside the plating bath 10, a film 16 may be disposed at a location above the anode 11 and below the intermediate member 60. In this case, the inside of the plating bath 10 is partitioned by the film 16 into an anode chamber 17a below the film 16 and a cathode chamber 17b above the film 16. The anode 11 is disposed in the anode chamber 17a, and the intermediate member 60 and the substrate Wf are disposed in the cathode chamber 17b. The film 16 is configured to allow ion species including metal ions contained in the plating solution Ps to pass through the film 16 while suppressing the non-ion-based plating additives contained in the plating solution Ps from passing through the film 16. As such a film 16, for example, an ion exchange membrane can be used.

[0044] The plating bath 10 is provided with a supply port for supplying the plating solution Ps to the plating bath 10. Specifically, on the outer peripheral wall 10b of the plating bath 10 according to the present embodiment, a first supply port 13a for supplying the plating solution Ps to the anode chamber 17a and a second supply port 13b for supplying the plating solution Ps to the cathode chamber 17b are provided.

[0045] Further, the plating bath 10 is provided with a first discharge port 14a for discharging the plating solution Ps in the anode chamber 17a to the outside of the plating bath 10. The plating solution Ps discharged from the first discharge port 14a is pumped by a pump (not shown) and then supplied again from the first supply port 13a to the anode chamber 17a.

[0046] The overflow bath 20 is constituted by a bottomed container disposed outside the plating bath 10. The overflow bath 20 is provided for temporarily storing the plating solution Ps that has exceeded the upper end of the outer peripheral wall 10b of the plating bath 10 (that is, the plating solution Ps that has overflowed from the plating bath 10). The plating solution Ps stored in the overflow bath 20 is discharged from the second discharge port 14b and then pumped by a pump (not shown) and supplied again from the second supply port 13b to the cathode chamber 17b.

[0047] The substrate holder 30 holds the substrate Wf as the cathode such that the plating surface Wfa of the substrate Wf faces the anode 11. In the present embodiment, specifically, the plating surface Wfa of the substrate Wf is provided on the surface (lower surface) facing the lower side of the substrate Wf.

[0048] The substrate holder 30 is connected to the rotation mechanism 40. The rotation mechanism 40 is a mechanism for rotating the substrate holder 30. The rotation mechanism 40 according to the present embodiment is indirectly connected to the substrate Wf via the substrate holder 30, and is configured to rotate the substrate Wf by rotating the substrate holder 30. As such a rotation mechanism 40, for example, a known rotation mechanism including a rotation motor or the like can be used. The tilt mechanism 45 is a mechanism for tilting the rotation mechanism 40 and the substrate holder 30.

[0049] The elevating mechanism 50 is supported by a support shaft 51 extending in the vertical direction and is configured to move in the vertical direction along the support shaft 51. The elevating mechanism 50 is configured to move the substrate holder 30, the rotation mechanism 40, and the tilt mechanism 45 up and down in the vertical direction. The elevating mechanism 50 according to the present embodiment is indirectly connected to the substrate Wf via the substrate holder 30, the rotation mechanism 40, and the tilt mechanism 45, and is configured to move the substrate Wf up and down by moving these members up and down. As such an elevating mechanism 50, a known elevating mechanism including a linear actuator or the like can be used.

[0050] When performing plating treatment on the substrate Wf, the elevating mechanism 50 lowers the substrate holder 30 to immerse the substrate Wf in the plating solution Ps (as a result, the state shown in FIG. 4 is obtained).

[0051] A paddle 70 may be positioned in the region of the plating tank 10 above the anode 11 and below the substrate holder 30. Specifically, the paddle 70 according to this embodiment is positioned between an intermediate member 60 positioned above the anode 11 and the substrate holder 30. The paddle 70 is a "stirring member" configured to stir the plating solution Ps when driven by a drive device (not shown). As an example, the paddle 70 according to this embodiment is driven alternately in the Y direction and the -Y direction in a direction parallel to the anode 11 (or substrate Wf).

[0052] Furthermore, the paddle 70 only needs to be positioned inside the plating tank 10 when stirring the plating solution Ps, and does not need to be positioned inside the plating tank 10 at all times. For example, if the drive of the paddle 70 is stopped and the plating solution Ps is not stirred by the paddle 70, the paddle 70 can be configured to be positioned outside the plating tank 10.

[0053] Referring to Figure 3, the plating module 400 is equipped with sensors 90 for detecting the state of the plating module 400. For example, these sensors 90 may include an angle sensor for detecting the rotational position (rotation angle) of the substrate Wf, and a rotational speed sensor for detecting the rotational speed of the substrate Wf. The sensors 90 may also include a voltage sensor for detecting the voltage between the anode 11 and the substrate Wf, and a current sensor for detecting the current between the anode 11 and the substrate Wf. Furthermore, the sensors 90 may include a film thickness sensor for detecting the film thickness of the plating film formed on the substrate Wf. The data detected by these sensors is transmitted to the control module 800.

[0054] The control module 800 according to this embodiment is composed of a microcomputer that includes a processor 801 and a storage device 802 as a non-temporary storage medium. The control module 800 controls the operation of the plating module 400 by operating the processor 801 based on program commands stored in the storage device 802.

[0055] Figure 5 is a schematic plan view of the substrate Wf according to this embodiment. Specifically, Figure 5 schematically shows the plated surface Wfa of the substrate Wf as viewed from above. Notches Wfc may be provided on the outer edge of the substrate Wf as positioning markers. Alternatively, an orientation flat may be provided on the outer edge of the substrate Wf instead of notches Wfc.

[0056] In this embodiment, the substrate Wf has a pattern-forming region Wfb, which is a region on which a pattern is formed. In this embodiment, a non-pattern-forming region Wfe is provided around the pattern-forming region Wfb on the substrate Wf, where no pattern is formed.

[0057] Figure 20(A) is a schematic cross-sectional view showing an enlarged view of the surface portion of the pattern formation region Wfb of the substrate Wf. Figure 20(B) is a schematic cross-sectional view illustrating the formation of a plating film (Wfd) on the pattern formation region Wfb. As illustrated in Figure 20(A), a photoresist layer Wph made of photoresist is provided in the pattern formation region Wfb of the substrate Wf.

[0058] Multiple patterns Wpt are provided in this photoresist layer Wph. Each of the multiple patterns Wpt is composed of a recess or protrusion provided in the photoresist layer Wph. Note that the photoresist layer Wph does not necessarily have to be provided in the non-patterned area Wfe of the substrate Wf, and even if the photoresist layer Wph is provided, the patterns Wpt are not provided there. The patterned area Wfb of the substrate Wf is used as a semiconductor chip, for example, after plating.

[0059] Referring to Figure 5, the contour shape of the pattern formation region Wfb according to this embodiment is non-circular in plan view. That is, the distance of the contour (outer edge) of the pattern formation region Wfb according to this embodiment from the center of the substrate Wf is not constant. Furthermore, the contour shape of the pattern formation region Wfb according to this embodiment is configured to appear the same shape before and after rotation when the substrate Wf is rotated by a "rotational symmetry angle (which has a value of less than 360°)".

[0060] To give a specific example, the pattern formation region Wfb of the substrate Wf according to this embodiment has, for instance, a cross shape formed by two intersecting rectangles. When the substrate Wf is rotated at least 180° clockwise from the state shown in Figure 5, the contour shape of the pattern formation region Wfb appears to be the same before and after rotation.

[0061] In the substrate Wf illustrated in Figure 5, 180° can be used as an example of a rotational symmetry angle. Therefore, in this embodiment, 180° will be used as the rotational symmetry angle in the following description. However, if the pattern formation region Wfb is cross-shaped and the shapes of the two intersecting rectangles are the same, 90° may be used as the rotational symmetry angle.

[0062] Of course, the 180° value mentioned above is just one example of a rotational symmetry angle, and the rotational symmetry angle is not limited to this. To give another example, if the contour shape of the pattern formation region Wfb of the substrate Wf is square, then 90° can be used as the rotational symmetry angle (an example of this substrate Wf is illustrated in Figure 21). For example, if the contour shape of the pattern formation region Wfb is an equilateral triangle, then 120° can be used as the rotational symmetry angle. Thus, the rotational symmetry angle can take any value less than 360° depending on the contour shape of the pattern formation region Wfb.

[0063] Figure 6 is a schematic plan view of the intermediate member 60 according to this embodiment. Referring to Figures 3, 4, and 6, the intermediate member 60 according to this embodiment has, in plan view, a hole-forming region 61 in which a plurality of holes 12a through which the plating solution Ps can pass are formed, and an electric field shielding region 62 in which no holes 12a are formed. In this embodiment, the electric field shielding region 62 is provided around the hole-forming region 61.

[0064] Furthermore, in plan view, the intermediate member 60 according to this embodiment has a contour shape of the hole-forming region 61 (which is the shape of the boundary portion 65 between the hole-forming region 61 and the electric field shielding region 62) that corresponds to the contour shape of the pattern-forming region Wfb of the substrate Wf.

[0065] In this embodiment, "the two shapes correspond" can be interpreted as meaning that the characteristics of the two shapes are the same. Specifically, if the two shapes appear to be the same when viewed with the naked eye, then it can be determined that the two shapes correspond. In this embodiment illustrated in Figures 5 and 6, the contour shape of the hole-forming region 61 and the contour shape of the pattern-forming region Wfb are the same.

[0066] Preferably, the area of ​​the hole-forming region 61 and the area of ​​the pattern-forming region Wfb are the same, but they may differ by, for example, within a range of 10% or less. When the areas of the two differ in this way, for example, if the area of ​​the hole-forming region 61 is larger than the area of ​​the pattern-forming region Wfb, it is preferable because it can effectively suppress the part of the pattern-forming region Wfb from being hidden in the shadow of the electric field shielding region 62.

[0067] The intermediate member 60 according to this embodiment is, for example, composed of an ion resistor 12 having a pore-forming region 61 and an electric field shielding region 62. The ion resistor 12 is a member that resists ions moving inside the plating solution Ps during the plating process. The material of the intermediate member 60 (i.e., the ion resistor 12) is not particularly limited, but for example, resins such as polyether ether ketone or polyvinyl chloride can be used.

[0068] Next, the plating method (plating process) according to this embodiment will be described. Figure 7 is an example of a flowchart of the plating method according to this embodiment. Figure 8 is an example of a timing chart of the plating method according to this embodiment. Specifically, the lower part of Figure 8 shows an example of a timing chart of the current (A) flowing between the anode 11 and the substrate Wf, and the upper part shows an example of a timing chart of the rotation angle (°) of the substrate Wf.

[0069] Referring to Figure 7, the plating method (plating process) according to this embodiment includes a supply process (step S5), an alignment process (step S10), a first energizing process (step S20), a rotation process (step S30), and a second energizing process (step S40). Note that each step in Figure 7 may be executed by the control process of the control module 800.

[0070] First, in the supply process related to step S5, the substrate Wf is supplied to the plating tank 10. As an example, in this embodiment, the substrate Wf is supplied to a location in the plating tank 10 that is above the intermediate member 60 but does not come into contact with the intermediate member 60. Specifically, the control module 800 controls, for example, the lifting mechanism 50 to lower the substrate holder 30 that holds the substrate Wf, thereby positioning the substrate Wf in the plating tank 10 at a location that is above the intermediate member 60 but does not come into contact with the intermediate member 60.

[0071] Next, in the alignment process related to step S10, the position (rotational position) of the substrate Wf is adjusted so that the contour shape of the pattern formation region Wfb of the substrate Wf and the contour shape of the hole formation region 61 of the intermediate member 60 are spatially aligned. For reference, Figure 9 shows an example of an image of the state in which the contour shape of the pattern formation region Wfb is aligned with the contour shape of the hole formation region 61.

[0072] Furthermore, the state in which the contour shape of the pattern forming region Wfb and the contour shape of the hole forming region 61 of the intermediate member 60 are spatially aligned means that although the pattern forming region Wfb and the hole forming region 61 are not in contact with each other, when the contour shape of the pattern forming region Wfb is projected downward, the projected shape substantially matches the contour shape of the hole forming region 61.

[0073] Specifically, in step S10, the control module 800 according to this embodiment controls the rotation mechanism 40 to rotate the substrate holder 30, thereby rotating the substrate Wf and aligning the contour shape of the pattern formation region Wfb of the substrate Wf with the contour shape of the hole formation region 61.

[0074] In the following explanation, the rotational position of the substrate Wf such that the contour shape of the pattern formation region Wfb is aligned with the contour shape of the hole formation region 61 may be referred to as the "reference rotational position" of the substrate Wf.

[0075] Next, the first energizing process related to step S20 is performed. In this first energizing process, the anode 11 and the substrate Wf are energized for a predetermined time while the substrate Wf is subjected to a "fluctuating rotational motion". This first energizing process corresponds to "time 0 (sec) to time t1 (sec)" in Figure 8. For reference, Figure 10 shows a schematic diagram illustrating the fluctuating rotational motion of the substrate Wf.

[0076] Here, "fluctuating rotational motion" refers to a rotational motion in which the substrate Wf is rotated by a first angle (α1) in a first rotational direction (Rt1) and by a second angle (α2) in a second rotational direction (Rt2) opposite to the first rotational direction, at least once, around a point where the contour shape of the pattern formation region Wfb is aligned with the contour shape of the hole formation region 61 of the intermediate member 60 (i.e., around a reference rotational position) (see Figure 10).

[0077] In this embodiment illustrated in Figure 8, the substrate Wf rotates multiple times in the first and second rotation directions during the fluctuating rotational motion. Also, in this embodiment, the first angle and the second angle are, for example, the same value. However, the configuration is not limited to this. For example, the first angle and the second angle may have different values.

[0078] The specific upper limits for the first and second angles are not particularly limited, but as an example, angles of 45° or less, specifically angles of 30° or less, and more specifically angles of 10° or less can be used. With this configuration, the substrate Wf can perform a fluctuating rotational motion near the reference rotation position.

[0079] Furthermore, the specific values ​​of the lower limits for the first and second angles are not particularly limited, as long as they are angles greater than 0°. For example, the lower limits for the first and second angles can be angles of 1° or more, specifically angles of 3° or more, and more specifically angles of 5° or more.

[0080] In step S20, the control module 800 can cause the substrate Wf to exhibit a fluctuating rotational motion by controlling the rotation mechanism 40. Furthermore, the control module 800 can supply power to the anode 11 and the substrate Wf by controlling the power supply device 18.

[0081] Furthermore, while the fluctuating rotational motion is represented by a triangular waveform in Figure 8, it is not limited to this. For example, the fluctuating rotational motion may also be represented by a sinusoidal waveform or the like.

[0082] As a result of the first energizing process described above, a plating film Wfd is formed on at least the pattern formation region Wfb of the plated surface Wfa of the substrate Wf (see Figure 20(B)).

[0083] The execution period for the first power-on process is not particularly limited, but a value selected from a range of several seconds to several hundred seconds can be used. For example, a value selected from a range of 5 seconds to 500 seconds may be used. Also, if the substrate Wf rotates multiple times in the fluctuating rotational motion, the specific number of rotations is not particularly limited, but a value selected from a range of several times to several hundred times can be used. For example, a value selected from a range of 2 times to 200 times may be used.

[0084] Next, the rotation process corresponding to step S30 in Figure 7 is executed. In this rotation process, with the power supply to the anode 11 and the substrate Wf stopped, the substrate Wf is rotated by a "rotational symmetry angle (180° as an example in this embodiment)". This rotation process corresponds to "the period between time t1 and time t2" in Figure 8.

[0085] Specifically, in step S30, the control module 800 according to this embodiment controls the rotation mechanism 40 to rotate the substrate Wf by an angle of rotational symmetry while the power supply to the anode 11 and the substrate Wf is stopped.

[0086] By stopping the supply of power to the anode 11 and the substrate Wf during the rotation process, it is possible to suppress the formation of a plating film on the pattern formation region Wfb when the rotation position of the substrate Wf is significantly deviated from the reference rotation position.

[0087] Next, the second energizing process corresponding to step S40 in Figure 7 is performed. In this second energizing process, the substrate Wf is subjected to a fluctuating rotational motion (i.e., while the substrate Wf is in a state of fluctuating rotational motion), and current is supplied to the anode 11 and the substrate Wf for a predetermined time. This second energizing process corresponds to "between time t2 and time t3" in Figure 8. Note that the predetermined time in step S40 and the predetermined time in step S20 may be the same value or may be different values.

[0088] Specifically, in step S40, the control module 800 according to this embodiment controls the rotation mechanism 40 to cause the substrate Wf to perform a fluctuating rotational motion. The control module 800 also controls the energizing device 18 to supply power to the anode 11 and the substrate Wf.

[0089] When this second energizing process is performed, a plating film is further formed on at least the pattern formation region Wfb of the plated surface Wfa of the substrate Wf.

[0090] The execution period for the second energizing process is not particularly limited, but a value selected from a range of several seconds to several hundred seconds can be used. For example, a value selected from a range of 5 seconds to 500 seconds may be used. Also, if the substrate Wf rotates multiple times during the fluctuating rotational motion in the second energizing process, the specific number of rotations is not particularly limited, but a value selected from a range of several times to several hundred times can be used. For example, a value selected from a range of 2 times to 200 times may be used.

[0091] In this embodiment, the plating method may further perform a "series of processes" including the rotation process (step S30) and the second energizing process (step S40) at least once after the execution of the second energizing process described above. Specifically, Figure 8 illustrates the timing chart of this "series of processes" from time t3 onwards.

[0092] Specifically, in Figure 8, "time t3-t4" corresponds to the second rotation process, and "time t4-t5" corresponds to the second second energizing process. Furthermore, "time t5-t6" corresponds to the third rotation process, and "time t6-t7" corresponds to the third second energizing process. In other words, in the timing chart of Figure 8, the "series of processes" is executed twice after the first second energizing process.

[0093] The execution time of the first energization process and the execution time of the second energization process may be the same or different. Furthermore, the period during which the fluctuating rotational motion occurs in the second energization process (referred to as the "period (T1)") may be the same or different among multiple executions of the second energization process. Also, the "amplitude of the fluctuating rotational motion (Am)" may be the same or different among multiple executions of the second energization process. The specific value of the period (T1) is not particularly limited; for example, a value within the range of a few seconds to several hundred seconds may be used.

[0094] Of course, the example explained in Figure 8 is merely one example of a plating method. For example, the series of processes may be performed only once, or three or more times. Alternatively, the series of processes may not be performed at all.

[0095] Furthermore, the plating process using the plating method described above may be carried out until the thickness of the plating film formed on the substrate Wf reaches a predetermined target value. In this case, the series of processes described above can be repeated until the film thickness reaches the target value.

[0096] Furthermore, as illustrated in Figure 8, in this embodiment, for example, when the rotation process is performed multiple times, the rotation direction of the substrate Wf in the rotation process performed at any given time is opposite to the rotation direction of the substrate Wf in the next rotation process performed.

[0097] In other words, the direction of rotation of the substrate Wf during the first rotation process is opposite to the direction of rotation of the substrate Wf during the second rotation process. Similarly, the direction of rotation of the substrate Wf during the second rotation process is opposite to the direction of rotation of the substrate Wf during the third rotation process. In this case, the substrate Wf may also rotate in the same direction during the "nth" rotation process, when the value of "rotation angle of substrate Wf × n" reaches 360°.

[0098] However, the rotation direction of the substrate Wf when the rotation process is performed multiple times is not limited to the configuration described above. For example, as illustrated in Figure 15, when the rotation process is performed multiple times, the rotation direction of the substrate Wf in the rotation process performed at any given time and the rotation direction of the substrate Wf in the next rotation process may be the same.

[0099] Furthermore, in the embodiment illustrated in Figure 8, the rotational speed (° / sec) of the substrate Wf during the fluctuating rotational motion and the rotational speed of the substrate Wf during the rotational process are the same value. However, the configuration is not limited to this.

[0100] For example, as illustrated in Figure 16, the rotational speed (° / sec) of the substrate Wf in the fluctuating rotational motion and the rotational speed of the substrate Wf in the rotational process may be different values. Also, in this case, as illustrated in Figure 16, for example, the rotational speed of the substrate Wf in the fluctuating rotational motion may be slower than the rotational speed of the substrate Wf in the rotational process.

[0101] Next, the main effects of this embodiment will be described. Figure 18 is a schematic plan view of an intermediate member 6000 according to a comparative example. Figure 19 is a schematic plan view illustrating the film thickness distribution of the substrate Wf.

[0102] Referring to Figure 18, the intermediate member 6000 in the comparative example differs from the intermediate member 60 in the embodiment illustrated in Figure 6 in that the contour shape of the hole-forming region 61 is circular.

[0103] When using the intermediate member 6000 according to this comparative example, the contour shape of the hole-forming region 61 of the intermediate member 6000 does not correspond to the contour shape of the pattern-forming region Wfb of the substrate Wf. Therefore, depending on the shape of the pattern-forming region Wfb of the substrate Wf, for example, a part of the pattern-forming region Wfb may be hidden in the shadow of the electric field shielding region 62 of the intermediate member 6000. In this case, it is difficult to achieve uniformity in the thickness of the plating film formed on the pattern-forming region Wfb of the substrate Wf.

[0104] In contrast, according to this embodiment, the intermediate member 60 is used such that the contour shape of the hole-forming region 61 corresponds to the contour shape of the pattern-forming region Wfb of the substrate Wf. Therefore, the pattern-forming region Wfb of the substrate Wf is suppressed from being hidden in the shadow of the electric field shielding region 62 of the intermediate member 60. As a result, the thickness of the plating film formed on the pattern-forming region Wfb of the substrate Wf can be made uniform.

[0105] Furthermore, when using the intermediate member 6000 according to the comparative example, the film thickness of the pattern formation region Wfb of the substrate Wf tends to be thicker, especially at the outer edge, compared to the film thickness in the region inside the outer edge of the pattern formation region Wfb. As a result, referring to Figure 19, there tends to be a significant difference in film thickness between point P1 and point P2, which is located at a smaller radius than point P1. Specifically, the film thickness at point P1 tends to be thicker than that at point P2.

[0106] In contrast, according to this embodiment, since the intermediate member 60 has a contour shape of the hole-forming region 61 that corresponds to the contour shape of the pattern-forming region Wfb of the substrate Wf, the difference in film thickness between point P1 and point P2 can be made smaller compared to the comparative example.

[0107] Furthermore, according to this embodiment, since the substrate Wf undergoes a fluctuating rotational motion during the first and second energizing processes, the following effects can also be achieved.

[0108] Figure 11 is a schematic diagram illustrating the effects of fluctuating rotational motion. Specifically, the upper diagram (No. 1) in Figure 11 shows an example of the film thickness distribution when current is applied to the anode 11 and the substrate Wf during the first and second energizing processes, while the substrate Wf is not undergoing fluctuating rotational motion (specifically, while the rotation of the substrate Wf has stopped). Note that No. 1 in Figure 11 shows the film thickness distribution along the imaginary line L1 illustrated in Figure 5. On the other hand, the lower diagram (No. 2) in Figure 11 shows an example of the film thickness distribution (film thickness distribution along the imaginary line L1) when current is applied to the anode 11 and the substrate Wf while the substrate Wf is undergoing fluctuating rotational motion during the first and second energizing processes.

[0109] As can be seen from No. 1 in Figure 11, in the comparative example, the film thickness tends to be particularly thick in the area of ​​the substrate Wf corresponding to the boundary portion 65 of the intermediate member 60 (specifically, regions R1 and R2 in Figure 5).

[0110] In contrast, when the substrate Wf is subjected to a fluctuating rotational motion during the first and second energizing processes, the position of the boundary portion 65 of the intermediate member 60 shifts from side to side in a plan view, and the substrate Wf is plated as a result. As a result, the electric field shielding effect of the electric field shielding region 62 of the intermediate member 60 allows the film thickness in regions R1 and R2 to be kept low, as illustrated in No. 2 of Figure 11. As a result, the film thickness of the plating film formed in the pattern formation region Wfb of the substrate Wf can be effectively made uniform.

[0111] Furthermore, according to this embodiment, since the rotation process is performed after the first energizing process and then the second energizing process is performed, the following effects can be achieved.

[0112] Specifically, this could involve a slight misalignment of the center position between the substrate Wf held by the substrate holder 30 and the intermediate member 60, or a slight misalignment of the parallelism between the substrate Wf and the intermediate member 60. In such a state, if the second energizing process is performed without the rotation process being executed after the first energizing process (i.e., if the energizing process is performed for a long time), the uniformity of the film thickness may deteriorate due to the effects of such misalignment of the center position or misalignment of parallelism.

[0113] In contrast, according to this embodiment, since the substrate Wf can be rotated by an angle of rotational symmetry in the rotation process and then plated in the second energizing process, the deterioration of film thickness uniformity caused by the deviation of the center position and the deviation of parallelism can be reduced. In this respect as well, according to this embodiment, film thickness uniformity can be effectively achieved.

[0114] (Modification 1) In the above-described embodiment, an intermediate member 60A, which will be described below, may be used instead of the intermediate member 60. Figure 12 is a schematic cross-sectional view of the intermediate member 60A according to Modification 1 of the embodiment. The intermediate member 60A according to this modification comprises an ion resistor 12 having a plurality of holes 12a, and an electric field shielding member 63 disposed above the ion resistor 12.

[0115] In this modified example, the contour shape of the region in which the multiple holes 12a of the ion resistor 12 are formed does not have to correspond to the contour shape of the pattern formation region Wfb of the substrate Wf. To give a specific example, the contour shape of the region in which the multiple holes 12a of the ion resistor 12 in this modified example is formed may be circular in plan view.

[0116] Figure 13 is a schematic plan view of the electric field shielding member 63 according to this modified example. Referring to Figures 12 and 13, the electric field shielding member 63 according to this modified example has an opening 66. In this case, the aforementioned electric field shielding region 62 is formed by the region surrounding the opening 66 of the electric field shielding member 63.

[0117] Furthermore, the aforementioned hole-forming region 61 is composed of a region in which multiple holes 12a of the ion resistor 12 are formed, located inside the opening 66 of the electric field shielding member 63 in a plan view (see Figure 12). As a result, the contour shape of the aforementioned hole-forming region 61 (shape of the boundary portion 65) is formed by the contour shape of the opening 66 of the electric field shielding member 63 (see Figures 12 and 13).

[0118] In this modified example, the shape of the intermediate member 60A, which has the ion resistor 12 and the electric field shielding member 63, when viewed from above is the same as the shape of the intermediate member 60 exemplified in Figure 6.

[0119] Even if the plating apparatus 1000 is equipped with the intermediate member 60A according to this modified example, the same effects and advantages as those of the embodiment described above can be achieved.

[0120] In this modified example, the ion resistor 12 and the electric field shielding member 63 are in contact with each other, but the configuration is not limited to this. The ion resistor 12 and the electric field shielding member 63 may not be in contact with each other, and a space (a space where the plating solution Ps exists) may be formed between the ion resistor 12 and the electric field shielding member 63.

[0121] Furthermore, this modified configuration may be configured to allow the relative position of the electric field shielding member 63 in the horizontal plane inside the plating tank 10 to be changed. Figure 14 is a schematic diagram illustrating an example of a configuration in which the position of the electric field shielding member 63 can be changed. As illustrated in Figure 14, the electric field shielding member 63 may be connected to the moving device 80 via an engaging member 81.

[0122] The engaging member 81 supports the electric field shielding member 63 and is configured to connect the moving device 80 and the electric field shielding member 63. Such an engaging member 81 may be composed of, for example, a cylindrical member (or a plurality of rod members) arranged to pass through the gap between the substrate holder 30 and the plating tank 10. If the engaging member 81 is composed of a cylindrical member, it may be provided with at least one opening 82 as needed for the plating solution to pass between the inside and outside of the engaging member 81.

[0123] The moving device 80 is configured to move the engaging member 81 in any direction in the horizontal plane (direction in the X-Y plane) in response to instructions from, for example, the control module 800. As an example, the moving device 80 may include a cylinder linear motion mechanism configured to move the engaging member 81 in the X direction and the -X direction, and a cylinder linear motion mechanism configured to move it in the Y direction and the -Y direction. For example, the control module 800 may move the moving device 80 in accordance with instructions from the user of the plating apparatus 1000.

[0124] With the above configuration, even if the position of the electric field shielding member 63 in the horizontal plane is shifted by a predetermined distance (for example, several mm) from the desired position, the moving device 80 can move the electric field shielding member 63 to the desired position by shifting it horizontally by a predetermined distance. This makes it easy to align the hole-forming region 61 of the electric field shielding member 63 with the pattern-forming region Wfb of the substrate Wf.

[0125] The adjustment of the position of the electric field shielding member 63 using this moving device 80 may be performed, for example, in the "alignment process" described above. That is, in this case, the alignment process may include not only rotating the substrate Wf, but also moving the electric field shielding member 63 in a direction in the horizontal plane to align the hole-forming region 61 of the electric field shielding member 63 with the pattern-forming region Wfb of the substrate Wf.

[0126] (Modification 2) In the above-described embodiment and Modification 1, the plating method may also be configured to not include the rotation process (step S30) and the second energizing process (step S40). In this case, the plating method consists of a supply process (step S5), an alignment process (step S10), and a first energizing process (step S20). An example of the timing chart for the first energizing process in this case is shown in Figure 17.

[0127] This modified example is preferably used, for example, when the contour shape of the pattern formation region Wfb of the substrate Wf does not have a rotational symmetry angle of less than 360°.

[0128] In this modified example, the alignment process and the first energizing process are performed, so when plating is applied to the substrate Wf, the substrate Wf can be subjected to a fluctuating rotational motion centered on a state in which the contour shape of the pattern formation region Wfb corresponds to the contour shape of the hole formation region 61, while energizing is applied to the anode 11 and the substrate Wf. This makes it possible to achieve uniformity of film thickness.

[0129] Although embodiments and modifications of the present invention have been described in detail above, the present invention is not limited to these specific embodiments and modifications, and various further modifications and changes are possible within the scope of the gist of the present invention.

[0130] 10 Plating tank 11 Anode 12 Ion resistor 12a Hole 60 Intermediate member 61 Hole formation region 62 Electric field shielding region 63 Electric field shielding member 800 Control module 1000 Plating apparatus Ps Plating solution Wf Substrate Wfb Pattern formation region Wpt Pattern

Claims

1. A supply process for supplying a substrate to a plating tank in which an anode and an intermediate member are arranged, wherein the intermediate member is positioned between the anode and the substrate supplied to the plating tank, the substrate is supplied to a location that does not come into contact with the intermediate member, the substrate has a pattern-forming region in which a plurality of patterns are formed, the contour shape of the pattern-forming region is non-circular, and the intermediate member has, in plan view, a hole-forming region in which a plurality of holes through which the plating solution can pass are formed, and an electric field shielding region arranged around the hole-forming region, the contour shape of the hole-forming region corresponds to the contour shape of the pattern-forming region; and a positioning process for adjusting the position of the substrate so that the contour shape of the pattern-forming region and the contour shape of the hole-forming region are spatially aligned. A plating method comprising: a first energizing process in which current is applied to the anode and the substrate while the substrate is subjected to a fluctuating rotational motion, wherein in the fluctuating rotational motion, the substrate rotates by a first angle in a first rotational direction and rotates by a second angle in a second rotational direction opposite to the first rotational direction at least once, with respect to a state in which the contour shape of the pattern forming region is aligned with the contour shape of the hole forming region.

2. The plating method according to claim 1, wherein the first angle is 45° or less, and the second angle is 45° or less.

3. The plating method according to claim 1, wherein the contour shape of the pattern formation region is configured such that it appears the same shape before and after rotation when the substrate is rotated by an angle of rotational symmetry of less than 360°.

4. The plating method according to claim 3, further comprising: a rotation process in which, after the first energizing process, the substrate is rotated by the rotational symmetry angle while the energizing of the anode and the substrate is stopped; and a second energizing process in which, after the rotation process, the substrate is subjected to the fluctuating rotational motion while the anode and the substrate are energized.

5. The plating method according to claim 4, wherein, after the execution of the second energizing process, a series of processes comprising the rotation process and the second energizing process is performed at least once more.

6. The plating method according to claim 5, wherein the series of processes is performed multiple times.

7. The plating method according to claim 6, wherein in the rotation process performed multiple times, the direction of rotation of the substrate in the rotation process performed at any given time is opposite to the direction of rotation of the substrate in the next rotation process performed.

8. The plating method according to claim 6, wherein in the rotation process performed multiple times, the direction of rotation of the substrate in the rotation process performed at any given time is the same as the direction of rotation of the substrate in the next rotation process performed.

9. The plating method according to claim 4, wherein the rotational speed of the substrate in the fluctuating rotational motion and the rotational speed of the substrate in the rotational process are the same value.

10. The plating method according to claim 4, wherein the rotational speed of the substrate in the fluctuating rotational motion and the rotational speed of the substrate in the rotational process are different values.

11. The plating method according to claim 10, wherein the rotational speed of the substrate in the fluctuating rotational motion is slower than the rotational speed of the substrate in the rotational process.

12. The plating method according to claim 1, wherein the intermediate member has an ion resistor having the pore-forming region and the electric field shielding region.

13. The plating method according to claim 1, wherein the intermediate member comprises an ion resistor having a plurality of holes and an electric field shielding member having an opening, disposed above the ion resistor, the electric field shielding region is composed of the region of the electric field shielding member surrounding the opening, the hole-forming region is composed of the region of the ion resistor having a plurality of holes located inside the opening of the electric field shielding member in a plan view, and the contour shape of the hole-forming region is composed of the contour of the opening of the electric field shielding member.

14. A plating apparatus comprising a control module configured to perform the supply process, the alignment process, and the first energizing process as described in claim 1.

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