Semiconductor device
The semiconductor device with a CFET structure and nanosheet transistors addresses the complexity of SRAM manufacturing by using gate contact connectors, enabling simpler production and enhanced integration density.
WO2026133616A1PCT designated stage Publication Date: 2026-06-25RAPIDUS CORP
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- RAPIDUS CORP
- Filing Date
- 2025-07-16
- Publication Date
- 2026-06-25
Smart Images
Figure JP2025025515_25062026_PF_FP_ABST
Abstract
This semiconductor device comprises: a first inverter comprising a first transistor and a second transistor; a second inverter comprising a third transistor and a fourth transistor and cross-connected to the first inverter; a first intermediate transistor and a second intermediate transistor; and a second pass gate transistor and a first pass gate transistor having a conductivity type opposite to that of the intermediate transistors. Respective gate electrodes of the intermediate transistors and respective gate electrodes of the pass gate transistors have respectively common word lines.
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