Method for manufacturing epitaxial wafer
The method for epitaxial wafer production using controlled growth rates in a reduced-pressure CVD apparatus addresses cross-contamination and cost issues, enhancing productivity and quality by forming high-quality, single-crystal gettering films.
WO2026133881A1PCT designated stage Publication Date: 2026-06-25SHIN ETSU HANDOTAI CO LTD
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SHIN ETSU HANDOTAI CO LTD
- Filing Date
- 2025-11-26
- Publication Date
- 2026-06-25
AI Technical Summary
Technical Problem
Existing methods for fabricating metal gettering layers in epitaxial wafers, such as ion implantation and gas-doping, face issues like cross-contamination, high costs, and lack of defined growth rates, which affect productivity and quality.
Method used
A method for manufacturing epitaxial wafers using a reduced-pressure CVD apparatus with controlled growth rates of 2.4 nm/sec or less for carbon-doped silicon gettering epitaxial films, ensuring single-crystal formation and high-quality film production.
Benefits of technology
This method improves productivity and reduces costs by achieving uniform film thickness and carbon atom concentration, resulting in high-quality epitaxial wafers with sufficient gettering ability and excellent crystallinity.
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Smart Images
Figure JP2025041192_25062026_PF_FP_ABST
Abstract
The present invention provides a method for manufacturing an epitaxial wafer, wherein when a gettering epitaxial film, which is formed of silicon that is gas-doped with carbon, is formed on a silicon substrate in a mixed gas atmosphere containing silicon and carbon using a reduced pressure CVD apparatus, the growth rate of the gettering epitaxial film is 2.4 nm / sec or less. This configuration makes it possible to provide a method for manufacturing an epitaxial wafer, wherein the growth rate at which a gettering epitaxial film is single-crystallized is specified.
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