Film-shaped adhesive, dicing / die-bonding integrated film, and semiconductor device and production method therefor

Abstract

Disclosed is a film-shaped adhesive comprising: at least one resin component selected from the group consisting of epoxy resins, phenolic resins, elastomers, and thermoplastic resins; an inorganic filler; and a dispersant having a polar group. The inorganic filler is made of a substance having a thermal conductivity at 20°C of 10-2,000 W / (m·K). The content of the inorganic filler is 50-85 mass% with respect to the whole film-shaped adhesive.

Claims

Epoxy resin and Phenolic resin and At least one resin component selected from the group consisting of elastomers and thermoplastic resins, Inorganic fillers, A dispersant having a polar group, It contains, The inorganic filler is a filler composed of a substance having a thermal conductivity of 10 to 2000 W / (m·K) at 20°C. The inorganic filler content is 50 to 85% by mass, based on the total amount of the film-like adhesive. Film-type adhesive. 　 The inorganic filler is a filler composed of a substance having a thermal conductivity of 10 to 600 W / (m·K) at 20°C. The film-like adhesive according to claim 1. 　 The inorganic filler is a filler composed of at least one substance selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, and silicon carbide. The film-like adhesive according to claim 1. 　 The aforementioned resin component includes acrylic rubber. A film-like adhesive according to any one of claims 1 to 3. 　 The content of the aforementioned resin component is 3 to 12% by mass, based on the total amount of the film-like adhesive. A film-like adhesive according to any one of claims 1 to 3. 　 The epoxy resin includes a liquid epoxy resin that is liquid at 30°C and a solid epoxy resin that is solid at 30°C. A film-like adhesive according to any one of claims 1 to 3. 　 The average particle size of the inorganic filler is 0.1 to 5 μm. A film-like adhesive according to any one of claims 1 to 3. The thermal conductivity at 35°C after heat curing at 110°C for 1 hour and 170°C for 3 hours is 0.5 W / (m·K) or higher. A film-like adhesive according to any one of claims 1 to 3. 　 The device comprises, in this order, a base layer, an adhesive layer, and an adhesive layer made of a film-like adhesive according to any one of claims 1 to 3. Dicing and die bonding integrated film. 　 The first semiconductor chip, A support member on which the first semiconductor chip is mounted, A cured film-like adhesive according to any one of claims 1 to 3, provided between the first semiconductor chip and the support member, for bonding the first semiconductor chip and the support member, Equipped with, Semiconductor equipment. 　 The present invention further comprises a second semiconductor chip, which is different from the first semiconductor chip, stacked on the surface of the first semiconductor chip. The semiconductor device according to claim 10. 　 A step of producing a plurality of semiconductor chips with adhesive pieces, each having a semiconductor chip and adhesive pieces formed by separating the adhesive layer attached to the semiconductor chip, on the adhesive layer of the dicing-die bonding integrated film according to claim 9, A step of bonding a first semiconductor chip and a first semiconductor chip having the first adhesive piece to a support member via the first adhesive piece, among the plurality of semiconductor chips with adhesive pieces, Equipped with, A method for manufacturing a semiconductor device. 　 The process further comprises a step of bonding a second semiconductor chip, which has a second semiconductor chip and a second adhesive piece, to the surface of the first semiconductor chip bonded to the support member, via the second adhesive piece. The method for manufacturing a semiconductor device according to claim 12. The method comprises a step of interposing a film-like adhesive according to any one of claims 1 to 3 between a first semiconductor chip and a support member, or between a first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, to bond the first semiconductor chip and the support member, or the first semiconductor chip and the second semiconductor chip. A method for manufacturing a semiconductor device.

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