Data write head device, magnetic head module, memory and electronic device

By designing a data write head and a servo read head arranged on the same side in the magnetic memory and using co-layer fabrication technology, the problems of large size and insufficient heat dissipation of the data write head device were solved, realizing the miniaturization of the device and efficient heat dissipation, thus improving the performance and reliability of the memory.

WO2026138076A1PCT designated stage Publication Date: 2026-07-02HUAWEI TECH CO LTD +1

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
HUAWEI TECH CO LTD
Filing Date
2025-10-13
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

The data write head devices in existing magnetic storage devices are large in size and have insufficient heat dissipation capacity, which affects the performance and reliability of the storage device.

Method used

Design a data write head device in which the data write head and servo read head are located on the same side, the tip and shielding layer are made of the same material and are fabricated in a co-layer, and the connection structure is fabricated through the same process, thereby reducing the device thickness and improving heat dissipation efficiency.

Benefits of technology

This technology enables miniaturization of the data write head device, improves the performance and reliability of the memory, extends its service life, and simplifies the fabrication process.

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Abstract

Provided in the present application are a data write head device, a magnetic head module, a memory and an electronic device. The data write head device comprises a substrate, a data write head and a servo read head, wherein the data write head and the servo read head are disposed on the same side of the substrate. The data write head comprises a first pole tip, a pole tip and a second pole tip that are sequentially arranged in a direction towards the substrate, wherein the pole tip is located between the first pole tip and the second pole tip. The servo read head comprises a first shielding layer, a tunneling magnetoresistive stack film and a second shielding layer that are sequentially arranged in a direction towards the substrate, wherein the tunneling magnetoresistive stack film is located between the first shielding layer and the second shielding layer, and the second shielding layer and the second pole tip are located on the same layer. Therefore, a thickness difference between a data write head and a servo read head is reduced, thereby facilitating a reduction in the size of the data write head device. The data write head device also has a high heat dissipation efficiency and a low risk of thermal failure, thereby facilitating an improvement in the performance of the memory. The data write head device also has high reliability and a long service life. For example, connection structures and the like are less prone to deterioration.
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Description

Data write head devices, magnetic head modules, memory and electronic devices

[0001] Cross-reference to related applications

[0002] This application claims priority to Chinese Patent Application No. 202411937827.5, filed on December 24, 2024, entitled "Data Write Head Device, Magnetic Head Module, Memory and Electronic Device", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of electronic equipment technology, and in particular to a data write head device, a magnetic head module, a memory, and an electronic device. Background Technology

[0004] The development of information technology has placed higher demands on storage media. Compared with traditional semiconductor storage technology, magnetic memory with magnetic tunnel junction (MTJ) as storage unit has the advantages of high storage capacity, low cost and long and stable data retention time.

[0005] Magnetic storage devices typically consist of a head module and a storage medium. The head module includes a data write head and a data read head. The data write head is used to record data into the storage medium, while the data read head is used to read data from the storage medium.

[0006] With the rapid development of computing and storage, the high-density demand of the magnetic storage industry is driving the miniaturization and improved heat dissipation capabilities of data write head devices. Summary of the Invention

[0007] This application provides a data write head device, a magnetic head module, a memory, and an electronic device to reduce the size of the data write head device, which is beneficial for miniaturization of the magnetic head module and the memory. The data write head device also has high heat dissipation efficiency, which is beneficial for improving the performance, reliability, and lifespan of the memory.

[0008] Firstly, this application provides a data write head device. The data write head device includes a substrate, a data write head, and a servo read head, with the data write head and servo read head disposed on the same side of the substrate. Specifically, the data write head is used to write data to a storage medium, and the servo read head is used to determine the current position of the data write head device. The data write head includes a first tip, a second tip, and a third tip arranged sequentially along the direction towards the substrate, with the second tip located between the first and second tips. The servo read head includes a first shielding layer, a tunneling magnetoresistive film, and a second shielding layer arranged sequentially along the direction towards the substrate, with the tunneling magnetoresistive film located between the first and second shielding layers. The second shielding layer and the second tip are located in the same layer. This reduces the thickness difference between the data write head and the servo read head, thereby reducing the size of the data write head device. Because the data write head device is thinner, its heat dissipation efficiency is also stronger, reducing the risk of thermal failure, which is beneficial for improving memory performance, reliability, and lifespan, and also reduces the likelihood of degradation in connection structures.

[0009] In the specific technical solution, the material of the second shielding layer is the same as that of the second tip. Therefore, the second shielding layer and the second tip can be fabricated using the same process, simplifying the fabrication process of the data write head device and improving product yield.

[0010] In a further technical solution, the first shielding layer and the first pole tip are located on the same layer. This is beneficial for further reducing the size of the data write head device, realizing the miniaturization of the magnetic head module and memory, and improving the heat dissipation efficiency of the data write head device.

[0011] In the specific technical solution, the material of the first shielding layer is the same as the material of the first electrode tip. The first shielding layer and the first electrode tip can also be prepared using the same process to simplify the fabrication process of the data write head device and improve product yield.

[0012] In a further technical solution, the aforementioned tip and tunneling magnetoresistive film are located in the same layer. The same process can be reused to prepare the aforementioned tip and tunneling magnetoresistive film using the same template, so as to achieve a more precise co-layering of the tip and tunneling magnetoresistive film and improve the performance of the magnetic head module.

[0013] The aforementioned data write head may further include a first magnetic yoke and a second magnetic yoke arranged sequentially along the direction toward the substrate. The first end of the first magnetic yoke is connected to the side of the first pole away from the pole, and the second end of the second magnetic yoke is connected to the side of the second pole away from the pole. That is, the first end of the first magnetic yoke is close to the pole, and the second end of the second magnetic yoke is close to the pole. The third end of the first magnetic yoke is located at both ends of the first magnetic yoke, and the fourth end of the second magnetic yoke is located at both ends of the second magnetic yoke. The third end of the first magnetic yoke and the fourth end of the second magnetic yoke are connected by a first connection structure. This first connection structure includes a first conductive layer, a second conductive layer, and a third conductive layer arranged sequentially along the direction toward the substrate, i.e., the second conductive layer is located between the first conductive layer and the third conductive layer. The material of the first conductive layer is the same as the material of the first pole, and the first conductive layer and the first pole are located in the same layer; the material of the second conductive layer is the same as the material of the pole, and the second conductive layer and the pole are located in the same layer; the material of the third conductive layer is the same as the material of the second pole, and the third conductive layer and the second pole are located in the same layer. The first electrode tip and the first conductive layer can be fabricated in the same process, the second electrode tip and the second conductive layer can be fabricated in the same process, and the second electrode tip and the second conductive layer can be fabricated in the same process. In this scheme, the first connection structure can be fabricated simultaneously with other structures without the need for additional processes to fabricate the aforementioned first connection structure, which helps to simplify the fabrication process of the data write head device.

[0014] In one technical solution, the data write head further includes a first coil and a second coil arranged sequentially along the direction towards the substrate. The first coil and the second coil are connected by a second connection structure. The second connection structure includes a fourth conductive layer, a fifth conductive layer, and a sixth conductive layer arranged sequentially along the direction towards the substrate, with the fifth conductive layer located between the fourth and sixth conductive layers. The fourth conductive layer is made of the same material as the first electrode tip, and the fourth conductive layer and the first electrode tip are located in the same layer; the fifth conductive layer is made of the same material as the electrode tip, and the fifth conductive layer and the electrode tip are located in the same layer; the sixth conductive layer is made of the same material as the second electrode tip, and the sixth conductive layer and the second electrode tip are located in the same layer. In this solution, the first electrode tip and the fourth conductive layer, the electrode tip and the fifth conductive layer, and the second electrode tip and the sixth conductive layer can be fabricated in the same process. In this solution, the second connection structure can be fabricated simultaneously with other structures, without the need for additional processes to fabricate the second connection structure, which simplifies the fabrication process of the data write head device.

[0015] In one technical solution, a first shielding layer is connected to a first electrode, and a second shielding layer is connected to a second electrode via a third connection structure; a first coil is connected to a third electrode, and a second coil is connected to a fourth electrode via a fourth connection structure. The first, second, third, and fourth electrodes are located on the same layer, which reduces the space occupied by the electrodes in the data write head device and allows all electrodes of the data write head device to be fabricated in a single process, thus simplifying the electrode fabrication process. The third connection structure includes a seventh and an eighth conductive layer arranged sequentially towards the substrate, and the fourth connection structure includes a ninth, tenth, and eleventh conductive layer arranged sequentially towards the substrate. The seventh and ninth conductive layers are made of the same material as the first electrode tip, and are located on the same layer as the first electrode tip; the eighth and tenth conductive layers are made of the same material as the electrode tip, and are located on the same layer as the electrode tip; the eleventh conductive layer is made of the same material as the second electrode tip, and is located on the same layer as the second electrode tip. The first electrode tip, the seventh conductive layer, and the ninth conductive layer can be fabricated in the same process; the electrode tip, the eighth conductive layer, and the tenth conductive layer can be fabricated in the same process; and the second electrode tip and the eleventh conductive layer can be fabricated in the same process. No additional processes are required to fabricate the aforementioned third and fourth connection structures, which simplifies the fabrication process of the data write head device.

[0016] In one specific technical solution, the first electrode tip, first conductive layer, fourth conductive layer, seventh conductive layer, and ninth conductive layer are made of the same material and located in the same layer, and can be fabricated in a single process. Similarly, the electrode tip, second conductive layer, fifth conductive layer, eighth conductive layer, and tenth conductive layer are made of the same material and located in the same layer, and can be fabricated in a single process. The second electrode tip, third conductive layer, sixth conductive layer, and eleventh conductive layer are made of the same material and located in the same layer, and can be fabricated in a single process. This thinning of the data write head device reduces its size, which is beneficial for miniaturizing the magnetic head module and the memory. The data write head device also has high heat dissipation efficiency, which is beneficial for improving the performance, reliability, and lifespan of the memory.

[0017] Secondly, this application also provides a magnetic head module. The magnetic head module includes a fixing structure, an electrical connector, and the data writing head device provided in the first aspect. The data writing head device is fixed to the fixing structure, and the electrical connector is electrically connected to the data writing head device. This magnetic head module has a small size, high heat dissipation efficiency, and strong reliability and service life.

[0018] Thirdly, this application also provides a memory. The memory includes a storage medium and a magnetic head module as described in the second aspect above. The data write head device of the magnetic head module is in contact with the storage medium, and the magnetic head module is used to write data onto the storage medium. The memory has a small size, high heat dissipation efficiency, and strong reliability and lifespan.

[0019] Fourthly, this application also provides an electronic device. The electronic device includes a housing, electronic components, and the memory provided in the third aspect above. The electronic components and the memory are disposed in the housing, and the electronic components are electrically connected to the memory. The memory of this electronic device has a small size and good performance. Attached Figure Description

[0020] Figure 1 is a schematic diagram of an electronic device according to an embodiment of this application;

[0021] Figure 2 is a schematic diagram of a memory structure in an embodiment of this application;

[0022] Figure 3 is a schematic diagram of a magnetic head module in an embodiment of this application;

[0023] Figure 4 is a partial structural schematic diagram of the magnetic head module in an embodiment of this application;

[0024] Figure 5 is a top view of a data write head device in an embodiment of this application;

[0025] Figure 6 is a cross-sectional view of a data write head device in an embodiment of this application.

[0026] Reference numerals: 100-Electronic device; 110-Housing; 120-Electronic component; 130-Memory; 131-Storage medium; 132-Magnetic head module; 133-Housing shell; 1-Fixing structure; 2-Electrical connector; 3-Data write head device; 31-Substrate; 32-Data write head; 321-First pole tip; 322-Pole tip; 323-Second pole tip; 324-First yoke; 3241-First end; 3242-Third end; 325-Second yoke; 3251-Second end; 3252-Fourth end; 326-First connection structure; 3261-First conductive layer; 3262-Second conductive layer; 3263-Third conductive layer; 327-First coil; 328-Second coil; 329-Second connection structure; 3291 - Fourth conductive layer; 3292 - Fifth conductive layer; 3293 - Sixth conductive layer;3210 - Third electrode; 3211 - Fourth electrode; 3212 - Fourth connection structure; 32121 - Ninth conductive layer; 32122 - Tenth conductive layer; 32123 - Eleventh conductive layer; 3213 - Third conductive hole; 3214 - Fourth conductive hole; 33 - Servo read head; 331 - First shielding layer; 332 - Tunneling magnetoresistive film; 333 - Second shielding layer; 334 - First electrode; 335 - Second electrode; 336 - Third connection structure; 3361 - Seventh conductive layer; 3362 - Eighth conductive layer; 337 - First conductive hole; 338 - Second conductive hole; 4 - Data read head device. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of this application clearer, the application will now be described in further detail with reference to the accompanying drawings.

[0028] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “an,” “the,” “the,” “the,” and “this” are intended to also include expressions such as “one or more” unless the context clearly indicates otherwise.

[0029] References to “one embodiment” or “specific embodiment” as used in this specification mean that one or more embodiments of this application include a particular feature, structure, or characteristic described in connection with that embodiment. The terms “comprising,” “including,” “having,” and variations thereof mean “including, but not limited to,” unless otherwise specifically emphasized.

[0030] To facilitate understanding of the data write head device, magnetic head module, memory, and electronic device provided in the embodiments of this application, their application scenarios will be introduced first below.

[0031] The electronic devices in this application embodiment can be information and communications technology (ICT) devices, computing devices (such as servers), artificial intelligence computing clusters, terminal devices (such as laptops or desktops), or storage devices (such as storage arrays).

[0032] Figure 1 is a schematic diagram of an electronic device according to an embodiment of this application. As shown in Figure 1, in this embodiment, the electronic device 100 includes a housing 110, electronic components 120, and a memory 130. The electronic components 120 and the memory 130 are disposed in the housing 110 and are electrically connected. In a specific embodiment, the electronic components 120 and the memory 130 can be electrically connected via a circuit board, or they can be electrically connected via cables or other means. The electronic device 100 uses the memory 130 to store data. Specifically, the electronic device 100 can be a device mainly used for data storage. The electronic components 120 include devices for reading from the memory 130, or devices for controlling the magnetic head module 132 in the memory 130, etc. In addition, the electronic device 100 can be a computing device, in which case the electronic components 120 can also include computing chips and other devices. These are not listed individually here.

[0033] Figure 2 is a schematic diagram of a memory 130 in an embodiment of this application. As shown in Figure 2, the memory 130 in this embodiment includes a storage medium 131 and a magnetic head module 132. The storage medium 131 is a magnetic storage medium 131, which may have magnetic tracks for storing data information. The magnetic head module 132 is a key component in a magnetoelectric disk that realizes the function of reading and writing data on the magnetic medium based on the tunneling magnetoresistive effect, and determines key characteristics such as data storage density, reading speed, and accuracy. The magnetic head module 132 can be positioned relative to the magnetic tracks to write and / or read data from the storage medium 131. Specifically, the magnetic head module 132 of the memory 130 is in contact with the storage medium 131, and the magnetic head module 132 and the storage medium 131 can move relative to each other to write data to the storage medium 131 or read data from the storage medium 131 using the magnetic head module 132. In a specific embodiment, the relative motion trajectory of the magnetic head module 132 and the storage medium 131 is arc-shaped. For example, the storage medium 131 has a circular structure and can rotate during data writing and / or reading. Alternatively, in another specific embodiment, the relative motion trajectory of the magnetic head module 132 and the storage medium 131 is linear. For example, the storage medium 131 has a square structure and the magnetic head module 132 moves in a straight line relative to the storage medium 131 during data writing and / or reading.

[0034] In some embodiments, the memory 130 may further include a support structure such as a bracket or a housing 133, on which the storage medium 131 and the magnetic head module 132 are mounted. This allows the memory 130 to be integrated into a relatively independent structure, facilitating the transportation and disassembly of the memory 130.

[0035] Specifically, the aforementioned memory 130 can be a magnetic tape or a hard disk drive (HDD). In short, the memory 130 is capable of storing data using a magnetic storage medium 131 and writing and / or storing data using a magnetic head module 132.

[0036] Figure 3 is a schematic diagram of one structure of the magnetic head module 132 in an embodiment of this application, and Figure 4 is a partial schematic diagram of one structure of the magnetic head module 132 in an embodiment of this application. As shown in Figures 3 and 4, in one embodiment, the magnetic head module 132 includes a fixing structure 1, an electrical connector 2, and a data writing head device 3. The data writing head device 3 is fixed to the fixing structure 1, thereby facilitating the installation of the data magnetic head module 132. The electrical connector 2 is electrically connected to the data writing head device 3, thereby facilitating the writing of data to be stored in the memory 130 to the storage medium 131 through the data writing head device 3, so as to realize the data storage of the memory 130.

[0037] In the embodiments shown in Figures 3 and 4, the magnetic head module 132 may further include a data read head device 4, which is also fixed to the fixing structure 1. In a specific embodiment, both the data write head device 3 and the data read head device 4 are elongated devices, and they are arranged in parallel, which simplifies the magnetic head module 132 of the memory 130, improves the miniaturization of the magnetic head module 132, and also helps to improve the miniaturization of the memory 130. The aforementioned data read head device 4 is also electrically connected to the electrical connector 2, thereby facilitating the reading of data from the storage medium 131 of the memory 130.

[0038] In a specific embodiment, the electrical connector 2 can be a flexible circuit board. In one embodiment, the electrical connector 2 is connected between the data write head device 3 and the electronic device 120, thereby establishing an electrical connection between the electronic device 120 and the data write head device 3. This allows the electronic device 120 to control the data write head device 3 to write data to the storage medium 131 of the memory 130, thus enabling data storage in the memory 130. In another embodiment, the electrical connector 2 is connected between the data read head device 4 and the electronic device 120, thereby establishing an electrical connection between the electronic device 120 and the data read head device 4. This allows the electronic device 120 to control the data read head device 4 to read data from the storage medium 131 of the memory 130, thus enabling data reading from the memory 130.

[0039] In a specific embodiment, the data write head device 3 in the magnetic head module 132 writes data onto the storage medium 131 through the tunneling magnetoresistive effect, and the data read head device 4 reads data from the storage medium 131 through the tunneling magnetoresistive effect. The data write head device 3 of the magnetic head module 132 is in contact with the storage medium 131; specifically, the data write head device 3 is in contact with the magnetic track to control the positive and negative magnetization directions of the magnetic domains. The positive and negative magnetization directions of the magnetic domains characterize the data content, thus enabling data writing. Similarly, when reading data from the storage medium 131 through the data read head device 4 of the magnetic head module 132 (specifically, the data write head device 3 is in contact with the magnetic track), the positive and negative magnetization directions of the magnetic domains are obtained through the data read head device 4, thereby acquiring the data and achieving data reading.

[0040] Figure 5 is a top-view structural diagram of the data write head device 3 in an embodiment of this application, and Figure 6 is a cross-sectional structural diagram of the data write head device 3 in an embodiment of this application. The left side view in Figure 6 corresponds to the cross-sectional structural diagram at point AA in Figure 5, and the right side view in Figure 6 corresponds to the cross-sectional structural diagram at point BB in Figure 5. As shown in Figures 5 and 6, in one embodiment, the data write head device 3 includes a substrate 31, a data write head 32, and a servo read head 33, with the data write head 32 and the servo read head 33 disposed on the same side of the substrate 31. Specifically, the data write head 32 and the servo read head 33 can be located within an insulating dielectric filling material, for example, the insulating dielectric filling material can be alumina or silicon oxide. The data write head 32 is used to write data to the storage medium 131, and the servo read head 33 is used to determine the current position of the data write head device 3. The data write head 32 includes a first tip 321, a tip 322, and a second tip 323, which are arranged sequentially along the direction toward the substrate 31. As shown in Figure 6, in a specific embodiment, the first tip 321 is located on the side of the second tip 323 facing away from the substrate 31, and the tip 322 is fixed to the surface of the first tip 321 facing the second tip 323. There is a gap between the tip 322 and the second tip 323, which is an air gap. The servo read head 33 includes a first shielding layer 331, a tunneling magnetoresistance (TMR) film 332, and a second shielding layer 333, which are arranged sequentially along the direction toward the substrate 31. The tunneling magnetoresistance film 332 is located between the first shielding layer 331 and the second shielding layer 333. Taking the side containing substrate 31 as the bottom, the first tip 321 can be called the upper tip, the second tip 323 the lower tip, the first shielding layer 331 the upper shielding layer, and the second shielding layer 333 the lower shielding layer. The second shielding layer 333 of the servo read head 33 and the second tip 323 of the data write head 32 are located on the same layer. This reduces the thickness difference between the data write head 32 and the servo read head 33, making it easier to reduce the size of the data write head device 3 and facilitating the miniaturization of the magnetic head module 132 and the memory 130. Because the data write head device 3 is thinner, its heat dissipation efficiency is also stronger, reducing the risk of thermal failure, which is beneficial to improving the performance, reliability, and lifespan of the memory 130, and making it less prone to degradation, such as in the connection structure.

[0041] Specifically, when fabricating the second shielding layer 333 and the second tip 323, co-layer deposition can be achieved, realizing film layer functional coupling and reducing the thickness of the data writing head device 3.

[0042] In addition, in one embodiment, the material of the second shielding layer 333 is the same as the material of the second tip 323. In this solution, the second shielding layer 333 and the second tip 323 can also be prepared using the same process, thereby simplifying the fabrication process of the data write head device 3 and improving product yield.

[0043] In a specific embodiment, the material of the second shielding layer 333 and the material of the second pole tip 323 can be nickel-iron magnetic material.

[0044] In a further embodiment, the first shielding layer 331 of the servo read head 33 and the first tip 321 of the data write head 32 can be located on the same layer, which is beneficial to further reduce the size of the data write head device 3, and to achieve miniaturization of the magnetic head module 132 and the memory 130, thereby improving the heat dissipation efficiency of the data write head device 3.

[0045] In addition, in one embodiment, the material of the first shielding layer 331 is the same as the material of the first tip 321. In this solution, the first shielding layer 331 and the first tip 321 can also be prepared using the same process, thereby simplifying the fabrication process of the data writing head device 3 and improving product yield.

[0046] Specifically, the material of the first shielding layer 331 and the material of the first pole tip 321 can be nickel-iron magnetic material.

[0047] Please continue to refer to Figure 6. In one embodiment, the tip 322 and the tunneling magnetoresistive film 332 are located on the same layer and can reuse the same process, thereby using the same template to prepare the above-mentioned tip 322 and tunneling magnetoresistive film 332, so that the tip 322 and tunneling magnetoresistive film 332 are co-layered more accurately, thereby improving the performance of the magnetic head module 132.

[0048] The aforementioned pole tip 322 can be a cobalt-iron pole tip material with high magnetic permeability, thus possessing good magnetic permeability.

[0049] Referring to Figure 6, in one embodiment, the data write head 32 further includes a first magnetic yoke 324 and a second magnetic yoke 325, which are arranged sequentially along the direction toward the substrate 31. In a specific embodiment, with the side where the substrate 31 is located as the bottom, the first magnetic yoke 324 can also be called the upper magnetic yoke, and the second magnetic yoke 325 can be called the lower magnetic yoke. The two ends of the first magnetic yoke 324 include a first end 3241 and a third end 3242, and the two ends of the second magnetic yoke 325 include a second end 3251 and a fourth end 3252. The first end 3241 of the first magnetic yoke 324 is connected to the side of the first pole 321 away from the pole 322, and the third end 3242 is located on the side of the first magnetic yoke 324 away from the first pole 321; the second end 3251 of the second magnetic yoke 325 is connected to the side of the second pole 323 away from the pole 322, and the fourth end 3252 is located on the side of the second magnetic yoke 325 away from the second pole 323. The third end 3242 of the first magnetic yoke 324 and the fourth end 3252 of the second magnetic yoke 325 are connected by a first connecting structure 326. The first magnetic yoke 324 and the second magnetic yoke 325 are respectively disposed on both sides of the first pole tip 321 and the second pole tip 323. The first connecting structure 326 includes a first conductive layer 3261, a second conductive layer 3262 and a third conductive layer 3263 arranged sequentially in the direction toward the substrate 31; the second conductive layer 3262 is located between the first conductive layer 3261 and the third conductive layer 3263, the first conductive layer 3261 is connected to the third end 3242 of the first magnetic yoke 324, and the third conductive layer 3263 is connected to the fourth end 3252 of the second magnetic yoke 325, thereby realizing the connection between the third end 3242 of the first magnetic yoke 324 and the fourth end 3252 of the second magnetic yoke 325.

[0050] In one specific embodiment, the first conductive layer 3261 is made of the same material as the first tip 321, and the first conductive layer 3261 and the first tip 321 are located in the same layer; the second conductive layer 3262 is made of the same material as the tip 322, and the second conductive layer 3262 and the tip 322 are located in the same layer; the third conductive layer 3263 is made of the same material as the second tip 323, and the third conductive layer 3263 and the second tip 323 are located in the same layer. In this scheme, the first tip 321 and the first conductive layer 3261 can be prepared in the same process, the tip 322 and the second conductive layer 3262 can be prepared in the same process, and the second tip 323 and the second conductive layer 3262 can be prepared in the same process. In this scheme, the first connecting structure 326 can be prepared simultaneously with other structures, that is, in the process of preparing the first tip 321, the tip 322 and the second tip 323, the first conductive layer 3261, the second conductive layer 3262 and the third conductive layer 3263 can be prepared simultaneously, respectively. No additional process is required to fabricate the first connection structure 326, which simplifies the fabrication process of the data writing head device 3.

[0051] Furthermore, referring to Figures 5 and 6, in one embodiment, the data write head 32 further includes a first coil 327 and a second coil 328, which are arranged sequentially along the direction toward the substrate 31. A portion of the structure of the first coil 327 is located between the first magnetic yoke 324 and the second coil 328, and a portion of the structure of the second coil 328 is located between the first coil 327 and the second magnetic yoke 325. The first coil 327 and the second coil 328 are connected by a second connection structure 329, which includes a fourth conductive layer 3291, a fifth conductive layer 3292, and a sixth conductive layer 3293 arranged sequentially along the direction toward the substrate 31. The fifth conductive layer 3292 is located between the fourth conductive layer 3291 and the sixth conductive layer 3293. The fourth conductive layer 3291 is connected to the first coil 327, and the sixth conductive layer 3293 is connected to the second coil 328, thereby achieving the connection between the first coil 327 and the second coil 328.

[0052] In a specific embodiment, the first coil 327 and the second coil 328 can be located within the insulating dielectric protective layer, thereby protecting the first coil 327 and the second coil 328.

[0053] In one specific embodiment, the fourth conductive layer 3291 is made of the same material as the first electrode tip 321, and the fourth conductive layer 3291 and the first electrode tip 321 are located in the same layer; the fifth conductive layer 3292 is made of the same material as the electrode tip 322, and the fifth conductive layer 3292 and the electrode tip 322 are located in the same layer; the sixth conductive layer 3293 is made of the same material as the second electrode tip 323, and the sixth conductive layer 3293 and the second electrode tip 323 are located in the same layer. In this scheme, the first electrode tip 321 and the fourth conductive layer 3291 can be prepared in the same process, the electrode tip 322 and the fifth conductive layer 3292 can be prepared in the same process, and the second electrode tip 323 and the sixth conductive layer 3293 can be prepared in the same process. In this design, the second connection structure 329 can be fabricated simultaneously with other structures. That is, during the fabrication of the first tip 321, tip 322, and second tip 323, the first conductive layer 3261, the second conductive layer 3262, and the third conductive layer 3263 can be fabricated simultaneously, respectively. No additional process is required to fabricate the second connection structure 329, which simplifies the fabrication process of the data write head device 3.

[0054] The aforementioned servo read head 33 and data write head 32 need to be connected to external electronic devices 120 to achieve data transmission. Therefore, the servo read head 33 and data write head 32 each have electrodes. Specifically, the first shielding layer 331 is connected to a first electrode 334, and the second shielding layer 333 is connected to a second electrode 335. One of the first electrode 334 and the second electrode 335 is the input electrode of the servo read head 33, and the other electrode is the output electrode of the servo read head 33. The first coil 327 is connected to a third electrode 3210, and the second coil 328 is connected to a fourth electrode 3211. One of the third electrode 3210 and the fourth electrode 3211 is the input electrode of the data write head 32, and the other electrode is the output electrode of the data write head 32. The first electrode 334, the second electrode 335, the third electrode 3210, and the fourth electrode 3211 are located on the same layer, which can reduce the space occupied by the electrodes of the data write head device 3. All electrodes of the data write head device 3 can be prepared in one process, thereby simplifying the electrode preparation process.

[0055] In a specific embodiment, the first electrode 334, the second electrode 335, the third electrode 3210, and the fourth electrode 3211 are interconnect metal materials including at least one metal such as gold or copper.

[0056] In a specific embodiment, the second shielding layer 333 is connected to the second electrode 335 via a third connection structure 336, and the second coil 328 is connected to the fourth electrode 3211 via a fourth connection structure 3212. The third connection structure 336 includes a seventh conductive layer 3361 and an eighth conductive layer 3362 arranged sequentially along the direction towards the substrate 31. The seventh conductive layer 3361 is connected to the second electrode 335, and the eighth conductive layer 3362 is connected to the second shielding layer 333, thereby achieving the connection between the second electrode 335 and the second shielding layer 333. The material of the seventh conductive layer 3361 is the same as that of the first electrode tip 321, and the seventh conductive layer 3361 and the first electrode tip 321 are located in the same layer; the material of the eighth conductive layer 3362 is the same as that of the electrode tip 322, and the eighth conductive layer 3362 and the electrode tip 322 are located in the same layer. The fourth connection structure 3212 includes a ninth conductive layer 32121, a tenth conductive layer 32122, and an eleventh conductive layer 32123 arranged sequentially along the direction toward the substrate 31; the tenth conductive layer 32122 is located between the ninth conductive layer 32121 and the eleventh conductive layer 32123, the ninth conductive layer 32121 is connected to the fourth electrode 3211, and the eleventh conductive layer 32123 is connected to the second coil 328, thereby realizing the connection between the fourth electrode 3211 and the second coil 328. The material of the ninth conductive layer 32121 is the same as that of the first electrode tip 321, and the ninth conductive layer 32121 and the first electrode tip 321 are located in the same layer; the material of the tenth conductive layer 32122 is the same as that of the electrode tip 322, and the tenth conductive layer 32122 and the electrode tip 322 are located in the same layer; the material of the eleventh conductive layer 32123 is the same as that of the second electrode tip 323, and the eleventh conductive layer 32123 and the second electrode tip 323 are located in the same layer.

[0057] In this scheme, the first electrode tip 321, the seventh conductive layer 3361, and the ninth conductive layer 32121 can be fabricated in the same process; the electrode tip 322, the eighth conductive layer 3362, and the tenth conductive layer 32122 can be fabricated in the same process; and the second electrode tip 323 and the eleventh conductive layer 32123 can be fabricated in the same process. No additional processes are required to fabricate the aforementioned third connection structure 336 and fourth connection structure 3212, which simplifies the fabrication process of the data write head device 3.

[0058] Furthermore, in this embodiment, the first electrode 334 is connected to the first shielding layer 331 through the first conductive hole 337, the second electrode 335 is connected to the third connection structure 336 through the second conductive hole 338, the third electrode 3210 is connected to the first coil 327 through the third conductive hole 3213, and the fourth electrode 3211 is connected to the fourth connection structure 3212 through the fourth conductive hole 3214. Due to the arrangement of the third connection structure 336 and the fourth connection structure 3212, and the fact that the first electrode 334, the second electrode 335, the third electrode 3210, and the fourth electrode 3211 are located on the same layer, the first conductive hole 337, the second conductive hole 338, the third conductive hole 3213, and the fourth conductive hole 3214 have the same depth. Therefore, the first conductive hole 337, the second conductive hole 338, the third conductive hole 3213, and the fourth conductive hole 3214 can be prepared using the same process, simplifying the fabrication process of the data writing head device 3. Furthermore, since the servo read head 33 and the data write head 32 are arranged on the same layer, the thickness of the data write head device 3 is relatively thin, and the depth of each of the aforementioned conductive holes can be relatively short, which helps to reduce the difficulty of the process and reduce signal loss.

[0059] In one specific embodiment, the first electrode tip 321, the first conductive layer 3261, the fourth conductive layer 3291, the seventh conductive layer 3361, and the ninth conductive layer 32121 are made of the same material and are located in the same layer, and can be prepared in a single process. The electrode tip 322, the second conductive layer 3262, the fifth conductive layer 3292, the eighth conductive layer 3362, and the tenth conductive layer 32122 are made of the same material and are located in the same layer, and can be prepared in a single process. The second electrode tip 323, the third conductive layer 3263, the sixth conductive layer 3293, and the eleventh conductive layer 32123 are made of the same material and are located in the same layer, and can be prepared in a single process.

[0060] It is worth noting that, in the embodiments of this application, except for the parallel embodiments which cannot be combined, the technical features of different embodiments can be combined to form new embodiments; or, in other words, the various technical features provided in the embodiments of this application, whether described in the same embodiment or not, can be combined as long as they are not mutually contradictory or parallel.

[0061] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A data write head device, characterized in that, It includes a substrate, a data write head, and a servo read head, wherein the data write head and the servo read head are disposed on the same side of the substrate. The data write head includes a first tip, a second tip, and a third tip arranged sequentially along the direction toward the substrate; the servo read head includes a first shielding layer, a tunneling magnetoresistive film, and a second shielding layer arranged sequentially along the direction toward the substrate. The second shielding layer and the second electrode tip are located in the same layer.

2. The data write head device as described in claim 1, characterized in that, The material of the second shielding layer is the same as the material of the second pole tip.

3. The data write head device as described in claim 1 or 2, characterized in that, The first shielding layer and the first electrode tip are located on the same layer.

4. The data write head device as described in claim 3, characterized in that, The material of the first shielding layer is the same as the material of the first pole tip.

5. The data write head device according to any one of claims 1 to 4, characterized in that, The pole tip and the tunneling magnetoresistive film are located in the same layer.

6. The data write head device according to any one of claims 1 to 5, characterized in that, The data write head also includes a first magnetic yoke and a second magnetic yoke arranged sequentially along the direction toward the substrate. The first end of the first magnetic yoke is connected to the side of the first pole away from the pole, and the second end of the second magnetic yoke is connected to the side of the second pole away from the pole. The third end of the first magnetic yoke and the fourth end of the second magnetic yoke are connected by a first connection structure, the first connection structure including a first conductive layer, a second conductive layer and a third conductive layer arranged sequentially along the direction toward the substrate; The first conductive layer is made of the same material as the first electrode tip, and the first conductive layer and the first electrode tip are located in the same layer; The second conductive layer is made of the same material as the electrode tip, and the second conductive layer and the electrode tip are located in the same layer; The material of the third conductive layer is the same as that of the second electrode tip, and the third conductive layer and the second electrode tip are located in the same layer.

7. The data write head device according to any one of claims 1 to 6, characterized in that, The data write head further includes a first coil and a second coil arranged sequentially in the direction toward the substrate. The first coil and the second coil are connected by a second connection structure, which includes a fourth conductive layer, a fifth conductive layer and a sixth conductive layer arranged sequentially in the direction toward the substrate. The fourth conductive layer is made of the same material as the first electrode tip, and the fourth conductive layer and the first electrode tip are located in the same layer. The fifth conductive layer is made of the same material as the electrode tip, and the fifth conductive layer and the electrode tip are located in the same layer; The material of the sixth conductive layer is the same as that of the second electrode tip, and the sixth conductive layer and the second electrode tip are located in the same layer.

8. The data write head device according to any one of claims 1 to 7, characterized in that, The first shielding layer is connected to a first electrode, and the second shielding layer is connected to a second electrode through a third connection structure; the first coil is connected to a third electrode, and the second coil is connected to a fourth electrode through a fourth connection structure. The third connection structure includes a seventh conductive layer and an eighth conductive layer arranged sequentially in the direction toward the substrate; the fourth connection structure includes a ninth conductive layer, a tenth conductive layer, and an eleventh conductive layer arranged sequentially in the direction toward the substrate; the seventh conductive layer and the ninth conductive layer are made of the same material as the first electrode tip, and the seventh conductive layer and the ninth conductive layer are located in the same layer as the first electrode tip; the eighth conductive layer and the tenth conductive layer are made of the same material as the electrode tip, and the eighth conductive layer and the tenth conductive layer are located in the same layer as the electrode tip; the eleventh conductive layer is made of the same material as the second electrode tip, and the eleventh conductive layer is located in the same layer as the second electrode tip.

9. A magnetic head module, characterized in that, It includes a fixed structural member, an electrical connector, and a data write head device as described in any one of claims 1 to 8, wherein the data write head device is fixed to the fixed structural member, and the electrical connector is electrically connected to the data write head device.

10. A memory, characterized in that, The device includes a storage medium and a magnetic head module as described in claim 9, wherein the data write head device of the magnetic head module is disposed in contact with the storage medium, and the magnetic head module is used to write data to the storage medium.

11. An electronic device, characterized in that, It includes a housing, electronic components, and a memory as described in claim 10, wherein the electronic components and the memory are disposed in the housing, and the electronic components are electrically connected to the memory.