Substrate processing device

Abstract

This substrate processing device comprises: a chamber; a substrate support part disposed in the chamber; a plurality of exhaust ports provided in the chamber along the circumference of the substrate support part in plan view; exhaust pumps that are individually provided to the respective exhaust ports and that exhaust the inside of the chamber; and a pressure adjustment mechanism that is provided in the chamber and that adjusts the pressure in the chamber by adjusting the flow rate of exhaust exhausted from the exhaust ports.

Description

Substrate processing apparatus

[0007]

[0001] The present disclosure relates to a substrate processing apparatus.

[0002] In Patent Document 1, there is disclosed a processing apparatus having a processing chamber that can be evacuated, a mounting table on which a workpiece to be processed is placed for a predetermined process, gas supply means for supplying necessary gas to the processing chamber, and an exhaust system that evacuates the atmosphere in the processing chamber with a vacuum pump interposed therebetween. In this processing apparatus, four exhaust ports are arranged at substantially equal intervals along the peripheral portion at the bottom of the processing chamber. An exhaust port is provided at each exhaust port. The exhaust port is airtightly connected to an exhaust pipe that becomes a part of the exhaust system through a gasket or welding or the like by a coupling. These exhaust pipes have a straight pipe shape in the rising portion, and the discharge sides are gathered into one and connected to a collecting pipe having a relatively large diameter. For example, a butterfly valve is provided in this collecting pipe to adjust the pressure in the processing chamber. A vacuum pump such as a turbo molecular pump is connected to the discharge side of this collecting pipe.

[0003] Japanese Patent Application Laid-Open No. 2003-293138

[0004] The technology according to the present disclosure improves the conductance of exhaust from the processing space and reduces the pressure in the processing space.

[0005] One aspect of the present disclosure is a substrate processing apparatus, comprising: a chamber; a substrate support portion provided in the chamber; a plurality of exhaust ports provided in the chamber along the periphery of the substrate support portion in plan view; an exhaust pump provided individually for each exhaust port to exhaust the inside of the chamber; and a pressure regulating mechanism provided in the chamber to adjust the pressure in the chamber by adjusting the exhaust flow rate exhausted from the exhaust port.

[0006] According to the present disclosure, it is possible to improve the conductance of exhaust from the processing space and reduce the pressure in the processing space.

[0007] This figure illustrates an example configuration of a plasma processing system according to this embodiment. This figure illustrates an example configuration of a capacitively coupled plasma processing apparatus. This is a partially enlarged view of Figure 2 showing the vicinity of the exhaust port. This is a cross-sectional view of the plasma processing chamber. This is a plan view of the pressure regulating mechanism. This is a partially enlarged cross-sectional view of the pressure regulating mechanism. This is a plan view showing another example 1 of the pressure regulating mechanism, which is a flowchart illustrating an example of a substrate processing method including an exhaust method by the plasma processing apparatus. This figure illustrates the operation of the pressure regulating mechanism of Figure 6. This figure illustrates the operation of another example 2 of the pressure regulating mechanism.

[0008] The configuration of the substrate processing apparatus according to this embodiment will be described below with reference to the drawings. In this specification, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] <Plasma Processing System> Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system according to this embodiment. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust pump 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage medium may be temporary or permanent. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0012] <Plasma Processing Equipment> Below, an example of the configuration of a capacitively coupled plasma processing equipment as an example of plasma processing equipment 1 will be described. Figure 2 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing equipment. Figure 3 is a partially enlarged view of Figure 2 showing the vicinity of the exhaust port 10e, which will be described later. Figure 4 is a cross-sectional view of the plasma processing chamber 10, which will be described later. In Figure 4, the annular member 210 and the exhaust ring 300, which will be described later, are not shown. Figures 5 and 6 are a plan view and a partially enlarged cross-sectional view of the pressure regulating mechanism 200, which will be described later, respectively. Note that Figures 3 and 6 show different positions in the circumferential direction of the substrate support portion 11, which will be described later.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, and a power supply system 30. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space Sp defined by the shower head 13, the outer peripheral wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0017] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. In one embodiment, the substrate support section 11 is supported by the bottom wall 10b of the plasma processing chamber 10. In the space between the base 1110 and the bottom wall 10b of the substrate support section 11, for example, a lifter (not shown) configured to extend and retract from the central region 111a of the main body section 111 to raise and lower the substrate W, and a power supply mechanism (not shown) for supplying power or applying voltage to the base 1110 are provided.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space Sp. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space Sp through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the outer peripheral wall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0020] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space Sp. Therefore, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0021] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) for plasma generation to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is coupled to at least one lower electrode and configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. If the first RF generation unit 31a is electrically connected or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected or coupled to the same lower electrode, or to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is connected to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is connected to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0024] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangle, trapezoid, triangle, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] Furthermore, as shown in Figures 2 and 3, the plasma processing apparatus 1 is provided with a gas outlet 10e, or exhaust port 10e, in the plasma processing chamber 10. As shown in Figure 4, multiple exhaust ports 10e (four in the example shown) are arranged along the circumference of the substrate support portion 11 in a plan view. For example, multiple exhaust ports 10e are arranged at approximately equal intervals along the circumferential direction of the substrate support portion 11 in a plan view on the bottom wall 10b of the plasma processing chamber 10.

[0026] Furthermore, in the plasma processing apparatus 1, a separate exhaust pump 40 is provided for each exhaust port 10e. Each exhaust port 10e is connected to a corresponding exhaust pump 40. Specifically, each exhaust port 10e is directly connected to a corresponding exhaust pump 40, that is, the corresponding exhaust pump 40 is connected without going through an exhaust pipe or the like. Therefore, if the exhaust port 10e is provided in the bottom wall 10b of the plasma processing chamber 10, the exhaust pump 40 is attached to the bottom wall 10b. Each exhaust pump 40 is, for example, a turbomolecular pump. If the exhaust pump 40 is a turbomolecular pump, a dry pump (not shown) is connected to the downstream side of the exhaust pump 40 in the exhaust direction.

[0027] Furthermore, as shown in Figures 2 and 3, the plasma processing apparatus 1 is equipped with a pressure regulating mechanism 200 within the plasma processing chamber 10. The pressure regulating mechanism 200 adjusts the pressure inside the plasma processing chamber 10 by adjusting the exhaust flow rate discharged from the exhaust port 10e, and specifically adjusts the pressure inside the plasma processing space Sp.

[0028] The pressure regulating mechanism 200 includes, for example, an annular member 210, a rotating member 220, and a lifting member 230, as shown in Figures 3, 5, and 6. The annular member 210 is formed in an annular shape that surrounds the substrate support portion 11 in plan view. This annular member 210 is configured to be rotatable about the circular substrate support portion 11 in plan view and has through holes 211 at positions corresponding to a plurality of exhaust ports 10e. The through holes 211 are provided at approximately equal intervals along the circumferential direction of the annular member 210. Between the through holes 211 in the circumferential direction of the annular member 210, there are non-through hole portions (hereinafter referred to as "non-hole portions") 212. The non-hole portions 212 are formed, for example, in a flat plate shape. The annular member 210 also has an insertion hole 213 at its center through which the substrate support portion 11 is inserted.

[0029] The rotating member 220 rotates, for example, around the substrate support portion 11 in a plan view, thereby rotating the annular member 210, which is engaged with the rotating member 220, around the substrate support portion 11 in a plan view. For example, teeth (not shown) that engage with each other are formed on the inner circumferential surface of the rotating member 220 and the outer circumferential surface of the annular member 210, that is, the rotating member 220 constitutes an internal gear and the annular member 210 constitutes an external gear. An actuator 221 that generates a driving force to rotate the rotating member 220 as described above is connected to the rotating member 220, and the actuator 221 includes, for example, a motor.

[0030] The lifting member 230 raises and lowers the annular member 210 by moving up and down while supporting the annular member 210. Multiple lifting members 230 are provided, for example, along the circumferential direction of the annular member 210. For example, the lifting member 230 supports the annular member 210 only when the annular member 210 is being raised or lowered, and at other times the lifting member 230 is lowered to a position away from the annular member 210. Each lifting member 230 is connected to an actuator 231 that generates a driving force to raise and lower the lifting member 230, and the actuator 231 includes, for example, a cylinder. The lifting member 230 is provided, for example, so as to penetrate the bottom wall 10b of the plasma processing chamber 10, and the actuator 231 is provided on the outside of the plasma processing chamber 10. The portion of the lifting member 230 that penetrates the bottom wall 10b is sealed so that the lifting member 230 can move up and down.

[0031] In the pressure adjustment mechanism 200, by rotating the annular member 210 around the substrate support portion 11 in a plan view while separated from the bottom wall 10b, the entirety of each through-hole 211 and the corresponding exhaust port 10e can be superimposed in a plan view, i.e., in the direction of penetration of the through-hole 211, as shown in Figure 5(A). This increases the flow rate of exhaust from the plasma processing space Sp via the through-hole 211 and the exhaust port 10e by the exhaust pump 40. Furthermore, by rotating the annular member 210 around the substrate support portion 11 in a plan view while separated from the bottom wall 10b, a portion of each through-hole 211 and the corresponding exhaust port 10e can be superimposed in a plan view, as shown in Figure 5(B). This reduces the flow rate of the exhaust. Furthermore, by rotating the annular member 210 around the substrate support portion 11 in a plan view while it is separated from the bottom wall 10b, the entire exhaust port 10e and the non-perforated portion 212 can be superimposed in a plan view, as shown in Figure 5(C). This further reduces the exhaust flow rate.

[0032] Furthermore, as shown in Figure 5(C), with the entire exhaust port 10e and the non-perforated portion 212 superimposed in a plan view, the annular member 210 is lowered by the lifting member 230 and supported on the bottom wall 10b of the plasma processing chamber 10, as shown by the dashed lines in Figures 3 and 6, thereby blocking the entire exhaust port 10e with the non-perforated portion 212. This stops the exhaust. In addition, by raising the annular member 210 to the rotation position by the lifting member 230, the annular member 210 can be rotated by the rotation member 220. The annular member 210, once raised to the rotation position, is rotatably supported by the rotation support member 222, which has moved to a support position that overlaps with the annular member 210 in a plan view. After being raised to the rotation position and supported by the rotation support member 222, the support of the annular member 210 by the lifting member 230 is released. The rotating support members 222 are provided in multiple locations, for example, along the circumferential direction of the annular member 210, and move between the support position and a retracted position that does not overlap with the annular member 210 in a plan view. An actuator 223 is connected to the rotating support members 222, which generates a driving force to move the rotating support members 222 between the support position and the retracted position. The actuator 223 includes, for example, a cylinder. The rotating support members 222 are provided so as to penetrate the outer peripheral wall 10a of the plasma processing chamber 10, and the actuator 223 is provided on the outside of the plasma processing chamber 10. The portion of the rotating support member 222 that penetrates the outer peripheral wall 10a is sealed so that the rotating support member 222 can move.

[0033] Alternatively, a sealing member may be provided around the exhaust port 10e on the upper surface of the bottom wall 10b of the plasma processing chamber 10 to seal the gap between the upper surface of the bottom wall 10b and the lower surface of the non-perforated portion 212 of the annular member 210.

[0034] In the above example, teeth are provided on the outer surface of the annular member 210 to rotate it in a gear-like manner. However, magnets may also be provided on the outer surface of the annular member 210 to rotate it using magnetic force.

[0035] In the plasma processing apparatus 1, an exhaust ring 300 is positioned around the substrate support portion 11 within the plasma processing chamber 10, above the annular member 210 of the pressure adjustment mechanism 200. Specifically, the exhaust ring 300 is positioned around the substrate support portion 11, below the central region 111a and the annular region 111b of the substrate support portion 11, and above the annular member 210, so as to surround the substrate support portion 11. The exhaust ring 300 is a baffle plate for adjusting the gas flow velocity. The exhaust ring 300 has numerous through holes, allowing gas to pass through. The exhaust ring 300 is formed, for example, in an annular shape in plan view.

[0036] <Substrate Processing Method Including Exhaust Method Using Plasma Processing Equipment> Figure 7 is a flowchart illustrating an example of a substrate W processing method including an exhaust method using plasma processing equipment 1. In plasma processing equipment 1, various plasma processing treatments such as etching, film deposition, and diffusion are performed on the substrate W.

[0037] First, as shown in Figure 7, for example, the substrate W is loaded into the plasma processing chamber 10, and the inside of the plasma processing chamber 10 is exhausted by the exhaust pump 40 (step S1). Specifically, the control unit 2 loads the substrate W into the plasma processing chamber 10 using a substrate transport device provided outside the plasma processing chamber 10, and places the substrate W on the electrostatic chuck 1111 of the substrate support unit 11. Next, the control unit 2 applies a voltage to the electrostatic chuck electrode 1111b using the chuck power supply. As a result, the substrate W is attracted and held to the electrostatic chuck 1111 by electrostatic force. In one embodiment, at the stage of loading the substrate W, the control unit 2 has already moved the annular member 210 of the pressure adjustment mechanism 200 to the aforementioned rotation position. Also, the exhaust speed of the exhaust pump 40 is equal between exhaust pumps 40, for example, and is constant during and before / after processing.

[0038] Furthermore, the pressure inside the plasma processing chamber 10 is reduced to a predetermined vacuum level. At this time, the control unit 2 adjusts the pressure inside the plasma processing chamber by adjusting the amount of exhaust gas discharged from the exhaust port 10e using the pressure regulating mechanism 200. Specifically, the control unit 2 has a pressure sensor (not shown) measure the pressure inside the plasma processing chamber 10, and controls the pressure regulating mechanism 200 based on the measurement result, specifically controlling the rotation of the annular member 210. In this way, the flow rate of exhaust gas from the plasma processing chamber 10 via the exhaust port 10e is adjusted so that the inside of the plasma processing chamber 10 reaches the target pressure.

[0039] Next, the plasma processing chamber 10 is evacuated by the exhaust pump 40, and the substrate W is processed by the plasma of the processing gas (step S2). Specifically, the control unit 2 supplies processing gas from the gas supply unit 20 to the plasma processing space 10s via the shower head 13. The control unit 2 also supplies source RF power for plasma generation from the first RF generation unit 31a to the lower electrode. This excites the processing gas and generates plasma. At this time, the control unit 2 may also supply bias RF power from the second RF generation unit 31b. Then, in the plasma processing space 10s, the substrate W is subjected to plasma processing by the action of the generated plasma. During plasma processing, that is, while the processing gas is being supplied, the control unit 2 adjusts the amount of exhaust gas discharged from the exhaust port 10e using the pressure adjustment mechanism 200 to adjust the pressure inside the plasma processing chamber. Specifically, the control unit 2 causes a pressure sensor (not shown) to measure the pressure inside the plasma processing chamber 10, and controls the pressure adjustment mechanism 200 based on the measurement result, specifically controlling the rotation of the annular member 210. This adjusts the flow rate of exhaust gas from the plasma processing chamber 10 via the exhaust port 10e so that the pressure inside the plasma processing chamber 10 reaches the target processing pressure.

[0040] When the plasma processing is complete, the control unit 2 stops the supply of source RF power from the first RF generation unit 31a and the supply of processing gas from the gas supply unit 20 to the plasma processing space 10s. If bias RF power was being supplied during the plasma processing, the control unit 2 also stops the supply of bias RF power from the second RF generation unit 31b.

[0041] After step S2, the substrate W is removed from the processing chamber 10 (step S3). Specifically, after step S2, the control unit 2 stops the electrostatic chuck 1111 from holding the substrate W and performs static discharge on the substrate W and the electrostatic chuck 1111 after plasma processing. Then, the control unit 2 removes the substrate W from the substrate support 11 and has it removed from the plasma processing chamber 10 by the aforementioned substrate transport device. In this way, the series of processes on the substrate W by the plasma processing apparatus 1, including plasma processing, is completed.

[0042] In the above example, the exhaust speeds of the exhaust pumps 40 were the same, but they may be different. That is, the control unit 2 may control each exhaust pump 40 so that their exhaust speeds are different from each other. If the exhaust pump 40 is a turbomolecular pump, the exhaust speed of the exhaust pump 40 can be adjusted by changing the rotation speed of the rotor (not shown) of the turbomolecular pump. When the exhaust speeds of the exhaust pumps 40 are to be different from each other, for example, the exhaust speed of each exhaust pump 40 is preset based on the plasma processing results of past substrates W. The preset exhaust speeds may be changed according to the target processing pressure in the processing chamber 10 during plasma processing.

[0043] <Main operational effects of this embodiment> In the plasma processing apparatus 1 according to this embodiment, a plurality of exhaust ports 10e are provided so as to surround the periphery of the substrate support portion 11 in a plan view, and an exhaust pump 40 is provided for each exhaust port 10e. Different from this, in a form in which only one common exhaust pump is provided for a plurality of exhaust ports 10e (hereinafter referred to as "comparative form"), in order to suppress the exhaust from the plasma processing space Sp on the substrate support portion 11 from being biased in the circumferential direction of the substrate support portion 11, it is necessary to provide a large diffusion space (manifold forming the same) between the exhaust port 10e and the exhaust pump. However, when such a large diffusion space is provided, the conductance of the exhaust from the plasma processing space Sp through the exhaust port 10e decreases. Then, even if the exhaust speed of the exhaust pump is increased, it may not be possible to sufficiently reduce the pressure in the plasma processing space Sp. Hereinafter, the conductance of the exhaust from the plasma processing space Sp through the exhaust port 10e will be abbreviated as "exhaust conductance".

[0044] In contrast, in this embodiment, since the exhaust pump 40 is provided for each of the plurality of exhaust ports 1e provided so as to surround the periphery of the substrate support portion 11 in a plan view, there is no need to provide the diffusion space as described above. Therefore, compared with the comparative form, the exhaust conductance can be improved by the amount corresponding to the absence of the diffusion space. Therefore, when the exhaust speed of each exhaust pump 40 is increased, the plasma processing space Sp can be made to have a lower pressure.

[0045] Furthermore, in this embodiment, a pressure regulating mechanism 200 is provided inside the plasma processing chamber 10 to adjust the pressure inside the plasma processing chamber 10 by adjusting the exhaust flow rate discharged from the exhaust port 10e. An APC valve has the same pressure regulating function as the pressure regulating mechanism 200, but in the comparative configuration described above, the APC valve is located between the exhaust port 10e and the exhaust pump, i.e., outside the plasma processing chamber 10. When a mechanism with a pressure regulating function is provided outside the plasma processing chamber 10 in this way, the exhaust conductance decreases. In contrast, in this embodiment, since the pressure regulating mechanism 200 with a pressure regulating function is provided inside the plasma processing chamber 10, the exhaust conductance is large. Therefore, when the exhaust speed of each exhaust pump 40 is increased, the pressure in the plasma processing space Sp can be made even lower.

[0046] Furthermore, since the plasma processing space Sp can be made even lower in pressure, collisions between ions in the plasma processing space Sp, which are drawn into the substrate W by the bias power, and gas molecules in the plasma processing space Sp can be suppressed. As a result, it is possible to suppress the ions from being incident at an angle to the substrate W instead of perpendicularly due to the above collisions. Therefore, when etching is performed as a plasma treatment, clogging of the openings of the etching mask on the substrate W caused by the oblique incidence of ions can be suppressed. As a result, ions and radicals can be sufficiently supplied to the part of the substrate W to be etched that is exposed through the openings of the etching mask, and the etching rate can be improved. In addition, since the above clogging can be suppressed, the variation in clogging within the plane of the substrate W can be suppressed, and thus the variation in etching results within the plane of the substrate W can be suppressed.

[0047] Also, in the present embodiment, since the exhaust conductance is large as described above, the plasma processing space Sp can be made to have a low pressure even if the supply flow rate of the processing gas to the plasma processing space Sp is large. That is, the range of the supply flow rate of the processing gas that can make the plasma processing space Sp have a low pressure and in which the supply flow rate of the processing gas capable of reducing particles is large can be widened.

[0048] Further, in the present embodiment, since the above-described diffusion space does not exist, the volume of the entire space where the processing gas is supplied and exhausted by the exhaust pump 40 is small. Therefore, the time for pressure adjustment when the pressure in the plasma processing chamber 10 rises and falls can be shortened.

[0049] Also, when providing a diffusion space (manifold forming the same) as in the comparative form, for example, a diffusion space (manifold forming the same) is provided below the bottom wall 10b of the plasma processing chamber 10, and an exhaust pump is provided further below that. In this case, the height of the entire plasma processing apparatus including the diffusion space (manifold forming the same) and the exhaust pump becomes high. On the other hand, in the present embodiment, since the diffusion space does not exist, the height of the plasma processing apparatus 1 can be suppressed. Therefore, stacking, that is, vertical stacking, of the plasma processing apparatuses 1 within a predetermined height can be realized.

[0050] <Another Example 1 of the Pressure Adjustment Mechanism> FIG. 8 is a plan view showing another example 1 of the pressure adjustment mechanism. FIG. 9 is a diagram for explaining the operation of the pressure adjustment mechanism of FIG. 8. The pressure adjustment mechanism 400 of FIG. 8 has a first closing member 410 for each exhaust port 10e. The first closing member 410 has a size capable of closing the entire corresponding exhaust port 10e. For example, when the shape of the exhaust port 10e is circular in plan view, the shape of the first closing member 410 is circular with a larger diameter than the corresponding exhaust port 10e in plan view. Also, the first closing member 410 is configured to be able to move up and down by a lifting mechanism 440 described later. Furthermore, the first closing member 410 has a hole 411 penetrating the first closing member 410. The hole 411 is formed, for example, in a circular shape in plan view.

[0051] The pressure regulating mechanism 400 further includes a second blocking member 420 for each exhaust port 10e and each first blocking member 410, which serves as another blocking member. The second blocking member 420 is sized to completely block the hole 411 of the corresponding first blocking member 410. For example, if the shape of the hole 411 is circular in plan view, the shape of the second blocking member 420 is a circle with a larger diameter than the hole 411 of the corresponding first blocking member 410 in plan view. The second blocking member 420 is also configured to be able to move up and down by a lifting mechanism 440, which will be described later.

[0052] Furthermore, the pressure regulating mechanism 400 includes a support member 430 that supports the first blocking member 410 and the second blocking member 420, and a lifting mechanism 440 that raises and lowers the first blocking member 410 and the second blocking member 420 by raising and lowering the support member 430.

[0053] The first blocking member 410 and the second blocking member 420 are provided for each exhaust port 10e, while the support member 430 is common to, for example, all exhaust ports 10e. In this case, the support member 430 is formed in an annular shape that surrounds the substrate support portion 11 in a plan view.

[0054] As shown in Figure 9, the lifting mechanism 440 includes a lifting member 441 configured to be movable up and down and connected to a support member 430, and an actuator 442 that generates a driving force to drive the lifting member 441 up and down. Multiple lifting members 441 and actuators 442 are provided, for example, along the circumferential direction of the support member 430. The actuator 442 includes, for example, a cylinder.

[0055] Furthermore, the support member 430 suspends the first blocking member 410 at a variable height relative to the support member 430. For example, the support member 430 suspends the first blocking member 410 via an elastic member 431 such as a spring. In addition, the support member 430 fixes a second blocking member 420 corresponding to the first blocking member 410 above it.

[0056] Therefore, as shown in Figure 9(A), by raising the support member 430 and raising the first blocking member 410 and the second blocking member 420, it is possible to make the exhaust port 10e not closed by the first blocking member 410, and the hole 411 of the first blocking member 410 not closed by the second blocking member 420. Also, as shown in Figure 9(B), by lowering the support member 430 and lowering the first blocking member 410 and the second blocking member 420, it is possible to make the exhaust port 10e closed by the first blocking member 410, but the hole 411 of the first blocking member 410 not closed by the second blocking member 420. Furthermore, as shown in Figure 9(C), by further lowering the support member 430 and the second blocking member 420, the exhaust port 10e can be closed by the first blocking member 410, and the hole 411 in the first blocking member 410 can also be closed by the second blocking member 420.

[0057] Alternatively, a sealing member 451 may be provided around the exhaust port 10e on the upper surface of the bottom wall 10b of the plasma processing chamber 10 to seal the gap between the upper surface of the bottom wall 10b and the first sealing member 410. Furthermore, a sealing member 452 may be provided around the hole 411 on the upper surface of the first sealing member 410 to seal the gap between the upper surface of the first sealing member 410 and the second sealing member 420.

[0058] In the state shown in Figure 9(A), gas surrounding the exhaust port 10e reaches the exhaust port 10e through the gap between the bottom wall 10b of the plasma processing chamber 10 and the first sealing member 410, as well as through the gap between the first sealing member 410 and the second sealing member 420 via the hole 411. Therefore, in the state shown in Figure 9(A), the flow rate of exhaust gas from the plasma processing space 10s via the exhaust port 10e can be increased.

[0059] As shown in Figure 9(A), by raising and lowering the support member 430 while the exhaust port 10e is not closed by the first blocking member 410, the flow rate of the processing gas from the gap between the bottom wall 10b of the plasma processing chamber 10 and the first blocking member 410 to the exhaust port 10e changes. Therefore, by raising and lowering the support member 430 as described above, the flow rate of exhaust gas from the plasma processing space 10s via the exhaust port 10e can be roughly adjusted.

[0060] Furthermore, in the state shown in Figure 9(B), the gas surrounding the exhaust port 10e does not pass through the gap between the bottom wall 10b of the plasma processing chamber 10 and the first sealing member 410, but instead reaches the exhaust port 10e through the gap between the first sealing member 410 and the second sealing member 420 via the hole 411. Therefore, in the state shown in Figure 9(B), the flow rate of exhaust gas from the plasma processing space 10s via the exhaust port 10e can be reduced.

[0061] As shown in Figure 9(B), by raising and lowering the support member 430 while the exhaust port 10e is closed by the first blocking member 410, only the second blocking member 420 of the two blocking members 420 can be raised and lowered. This allows the gap between the first blocking member 410 and the second blocking member 420 to be changed, and the flow rate of the processing gas from this gap through the hole 411 to the exhaust port 10e can be changed. Therefore, by raising and lowering the support member 430 as described above, the flow rate of exhaust gas from the plasma processing space 10s through the exhaust port 10e can be finely adjusted. By making the hole 411 smaller, the adjustment of the exhaust flow rate by raising and lowering the support member 430 while the exhaust port 10e is closed by the first blocking member 410 can be adjusted more finely.

[0062] In the state shown in Figure 9(C), the gas surrounding the exhaust port 10e does not reach the exhaust port 10e. Therefore, in the state shown in Figure 9(C), exhaust from the plasma processing space 10s via the exhaust port 10e is stopped.

[0063] <Another Example 2 of a Pressure Regulating Mechanism> Figure 10 is a diagram illustrating the operation of another example 2 of a pressure regulating mechanism. The pressure regulating mechanism 400A in Figure 10, like the pressure regulating mechanism 400 shown in Figure 8, has a first blocking member 410 for each exhaust port 10e, and a second blocking member 420 for each exhaust port 10e and each first blocking member 410.

[0064] However, unlike the pressure regulating mechanism 400, the pressure regulating mechanism 400A includes a first support member 510 that supports only the first blocking member 420 of the two blocking members 410 and 420, a second support member 520 that supports only the second blocking member 420, a first lifting mechanism 530 that raises and lowers the first blocking member 410 by raising and lowering the first support member 510, and a second lifting mechanism 540 provided separately from the first lifting mechanism 530 that raises and lowers the second blocking member 420 by raising and lowering the second support member 520.

[0065] The first support member 510 and the second support member 520 are common, for example, between the exhaust ports 10e. In this case, the first support member 510 and the second support member 520 are formed in an annular shape that surrounds the substrate support portion 11 in a plan view, similar to the support member 430.

[0066] The first lifting mechanism 530 includes a lifting member 531 configured to be vertically movable and connected to the first support member 510, and an actuator 532 that generates a driving force to drive the lifting member 531 up and down. Multiple lifting members 531 and actuators 532 are provided, for example, along the circumferential direction of the first support member 510. The actuator 532 includes, for example, a cylinder. A second lifting mechanism 540 may also be detachably connected to the lifting member 531 of the first lifting mechanism 530. When the lifting member 531 is raised and lowered with the second lifting mechanism 540 connected, not only the first support member 510 but also the second lifting mechanism 540, the second support member 520 to which the second lifting mechanism 540 is connected, and the second blocking member 420 supported by the second support member 520 can be raised and lowered.

[0067] The second lifting mechanism 540 includes a lifting member 541 configured to be movable up and down and connected to the second support member 520, and an actuator 542 that generates a driving force to drive the lifting member 541 up and down. Multiple lifting members 541 and actuators 542 are provided, for example, along the circumferential direction of the second support member 520. The actuator 542 includes, for example, a cylinder.

[0068] Furthermore, the first support member 510 is fixed to the first blocking member 410, and the second support member 520 is fixed to the second blocking member 420 which is above the first blocking member 410.

[0069] In the pressure regulating mechanism 400A, as shown in Figure 10(A), by raising the first support member 510 and the second support member 520, the first blocking member 410 and the second blocking member 420 can be raised so that the exhaust port 10e is not closed by the first blocking member 410, and the hole 411 of the first blocking member 410 is not closed by the second blocking member 420. Also, as shown in Figure 10(B), by lowering the first support member 510 and the second support member 520, or by lowering only the first support member 510, at least the first blocking member 410 can be lowered so that the exhaust port 10e is closed by the first blocking member 410, but the hole 411 of the first blocking member 410 is not closed by the second blocking member 420. Furthermore, as shown in Figure 10(C), by lowering the second support member 520 and the second blocking member 420, the exhaust port 10e can be closed by the first blocking member 410, and the hole 411 in the first blocking member 410 can also be closed by the second blocking member 420.

[0070] <Other examples of pressure regulating mechanisms> Pressure regulating mechanisms 400 and 400A had a first blocking member 410 and a second blocking member 420. Alternatively, the pressure regulating mechanism may have a blocking member provided for each exhaust port 10e and configured to be vertically movable, and the blocking member may be sized to block the entire corresponding exhaust port 10e, similar to the first blocking member 410, but unlike the first blocking member 410, it may not have a hole 411. Also, in pressure regulating mechanisms 400 and 400A, a support member 430, a first support member 510, and a second support member 520 were provided in common between the exhaust ports 10e, but these support members may be provided for each exhaust port 10e.

[0071] <Other Modifications> When using pressure regulating mechanisms 400, 400A, or the pressure regulating mechanisms described in <Other Examples of Pressure Regulating Mechanisms>, the exhaust speeds of the exhaust pumps 40 may be equal among the exhaust pumps 40, or they may be different from each other, as in the case where pressure regulating mechanism 200 is used.

[0072] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0073] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that are obvious to those skilled in the art from the description herein, in addition to or instead of the effects described herein.

[0074] The following configuration examples also fall within the technical scope of this disclosure: (1) A substrate processing apparatus comprising: a chamber; a substrate support portion provided in the chamber; a plurality of exhaust ports provided in the chamber along the circumference of the substrate support portion in a plan view; an exhaust pump provided individually for each exhaust port for exhausting the contents of the chamber; and a pressure regulating mechanism provided in the chamber for adjusting the exhaust flow rate discharged from the exhaust ports to adjust the pressure inside the chamber. (2) The substrate processing apparatus according to (1), wherein the exhaust pump is directly connected to the corresponding exhaust port. (3) The substrate processing apparatus according to (1) or (2), wherein the pressure regulating mechanism has an annular member formed in an annular shape that surrounds the substrate support portion in a plan view, the annular member is configured to be rotatable about the substrate support portion, and each of the exhaust ports has a through hole, and by rotation, it is possible to overlap a part or the whole of each of the plurality of exhaust ports with the corresponding through hole in a view in the direction of the through hole, and by rotation, it is possible to overlap the whole of each of the plurality of exhaust ports with the non-formed portion of the through hole in a view in the direction of the through hole. (4) The substrate processing apparatus according to (1) or (2), wherein the pressure regulating mechanism has a first blocking member for each of the exhaust ports, the first blocking member is sized to block the whole of the corresponding exhaust port and is configured to be vertically movable. (5) The substrate processing apparatus according to (4), wherein the first blocking member has a hole, the pressure regulating mechanism has a second blocking member for each of the first blocking members, and the second blocking member is sized to block the entire hole of the corresponding first blocking member and is configured to be vertically movable. (6) The substrate processing apparatus according to (5), wherein the pressure regulating mechanism has a support member that supports the first blocking member and the second blocking member, and a vertical mechanism that raises and lowers the support member, the support member suspends the first blocking member at a height variable relative to the support member, and fixes the corresponding second blocking member above the first blocking member.(7) The substrate processing apparatus according to (5), wherein the pressure regulating mechanism comprises: a first support member to which the first blocking member is fixed; a first lifting mechanism for raising and lowering the first support member; a second support member for fixing the second blocking member above the first blocking member; and a second lifting mechanism provided separately from the first lifting mechanism for raising and lowering the second support member. (8) The substrate processing apparatus according to any one of (1) to (7), further comprising a control unit configured to control the exhaust pumps, wherein the control unit controls the exhaust pumps so that the exhaust speeds are different from each other. (9) A method for exhausting from a chamber of a substrate processing apparatus, wherein the chamber has a substrate support portion inside, and has a plurality of exhaust ports along the circumference of the substrate support portion in a plan view, and the method includes the step of exhausting the inside of the chamber with an exhaust pump provided individually for each of the exhaust ports, the exhausting step includes the step of adjusting the pressure inside the chamber by adjusting the exhaust flow rate exhausted from the exhaust ports using a pressure regulating mechanism provided inside the chamber. (10) The exhaust method according to (9), wherein the exhaust pump is directly connected to the corresponding exhaust port. (11) The exhaust method according to (9) or (10), wherein the pressure regulating mechanism has an annular member formed in an annular shape surrounding the substrate support portion in a plan view, the annular member is configured to be rotatable about the substrate support portion, and has a through hole for each of the exhaust ports, and the adjustment step is to rotate the annular member to align a part of each of the plurality of exhaust ports with the corresponding through hole in a view in the direction of the through hole, to align the entirety of each of the plurality of exhaust ports with the corresponding through hole in a view in the direction of the through hole, or to align the entirety of each of the plurality of exhaust ports with the portion of the annular member where the through hole is not formed in a view in the direction of the through hole, thereby adjusting the pressure in the chamber. (12) The exhaust method according to (9) or (10), wherein the pressure adjustment mechanism has a first blocking member for each exhaust port, the first blocking member is sized to block the entire corresponding exhaust port, and the adjustment step is to raise and lower the first blocking member to adjust the pressure in the chamber.(13) The exhaust method according to (12), wherein the first sealing member has a hole, the pressure regulating mechanism has a second sealing member for each of the first sealing members, the second sealing member is sized to completely block the hole of the corresponding first sealing member, and the adjustment step is to raise and lower the second sealing member to further adjust the pressure in the chamber. (14) The exhaust method according to (13), wherein the pressure regulating mechanism has a support member that supports the first sealing member and the second sealing member, the support member suspends the first sealing member at a variable height relative to the support member and fixes the corresponding second sealing member above the first sealing member, and by raising and lowering the support member, both the first sealing member and the second sealing member are raised and lowered, or only the second sealing member chamber is raised and lowered. (15) The exhaust method according to (13), wherein the pressure regulating mechanism comprises a first support member to which the first blocking member is fixed, and a second support member that fixes the second blocking member above the first blocking member, and the first blocking member is raised and lowered by raising and lowering the first support member with a first lifting mechanism, and the second blocking member is raised and lowered by raising and lowering the second support member with a second lifting mechanism provided separately from the first lifting mechanism. (16) The exhaust method according to any one of (9) to (15), wherein in the exhaust step, the exhaust speeds of the exhaust pumps are different from each other.

[0075] 1 Plasma processing apparatus 10 Plasma processing chamber 10e Exhaust port 10e Gas outlet 40 Exhaust pump 200, 400, 400A Pressure regulating mechanism

Claims

1. A substrate processing apparatus comprising: a chamber; a substrate support portion provided within the chamber; a plurality of exhaust ports provided in the chamber along the circumference of the substrate support portion in a plan view; an exhaust pump provided individually for each exhaust port for exhausting the contents of the chamber; and a pressure regulating mechanism provided within the chamber for adjusting the exhaust flow rate of the exhaust gases discharged from the exhaust ports to adjust the pressure inside the chamber.

2. The substrate processing apparatus according to claim 1, wherein the exhaust pump is directly connected to the corresponding exhaust port.

3. The substrate processing apparatus according to claim 1 or 2, wherein the pressure adjustment mechanism has an annular member formed in a ring shape that surrounds the substrate support portion in a plan view, the annular member is configured to be rotatable about the substrate support portion, and each of the exhaust ports has a through hole, and by rotation, it is possible to overlap a part or all of each of the plurality of exhaust ports with the corresponding through hole in a view in the direction of the through hole, and by rotation, it is possible to overlap the entirety of each of the plurality of exhaust ports with the non-formed portion of the through hole in a view in the direction of the through hole.

4. The substrate processing apparatus according to claim 1 or 2, wherein the pressure regulating mechanism has a first blocking member for each exhaust port, and the first blocking member is sized to block the entire corresponding exhaust port and is configured to be vertically movable.

5. The substrate processing apparatus according to claim 4, wherein the first blocking member has a hole, the pressure regulating mechanism has a second blocking member for each of the first blocking members, and the second blocking member is sized to block the entire hole of the corresponding first blocking member and is configured to be vertically movable.

6. The substrate processing apparatus according to claim 5, wherein the pressure adjustment mechanism comprises a support member that supports the first sealing member and the second sealing member, and a lifting mechanism for raising and lowering the support member, the support member suspends the first sealing member at a variable height relative to the support member, and fixes the corresponding second sealing member above the first sealing member.

7. The substrate processing apparatus according to claim 5, wherein the pressure regulating mechanism comprises: a first support member to which the first blocking member is fixed; a first lifting mechanism for raising and lowering the first support member; a second support member for fixing the second blocking member above the first blocking member; and a second lifting mechanism provided separately from the first lifting mechanism for raising and lowering the second support member.

8. The substrate processing apparatus according to claim 1 or 2, further comprising a control unit configured to control the exhaust pumps, wherein the control unit controls the exhaust speeds of the exhaust pumps to be different from each other.

9. A method for exhausting from a chamber of a substrate processing apparatus, wherein the chamber has a substrate support portion inside, and has a plurality of exhaust ports along the circumference of the substrate support portion in a plan view, and the method includes the step of exhausting the inside of the chamber with an exhaust pump provided individually for each exhaust port, and the exhausting step includes the step of adjusting the pressure inside the chamber by adjusting the exhaust flow rate exhausted from the exhaust ports with a pressure regulating mechanism provided inside the chamber.

10. The exhaust method according to claim 9, wherein the exhaust pump is directly connected to the corresponding exhaust port.

11. The exhaust method according to claim 9 or 10, wherein the pressure adjustment mechanism has an annular member formed in an annular shape surrounding the substrate support portion in a plan view, the annular member is configured to be rotatable about the substrate support portion, and each of the exhaust ports has a through hole, and the adjustment step is to adjust the pressure in the chamber by rotating the annular member so that a part of each of the plurality of exhaust ports and the corresponding through hole are aligned in a view in the direction of the through hole, the entirety of each of the plurality of exhaust ports and the corresponding through hole are aligned in a view in the direction of the through hole, or the entirety of each of the plurality of exhaust ports and the portion of the annular member where the through hole is not formed are aligned in a view in the direction of the through hole.

12. The exhaust method according to claim 9 or 10, wherein the pressure regulating mechanism has a first blocking member for each exhaust port, the first blocking member is sized to block the entire corresponding exhaust port, and the adjustment step involves raising and lowering the first blocking member to adjust the pressure in the chamber.

13. The exhaust method according to claim 12, wherein the first sealing member has a hole, the pressure regulating mechanism has a second sealing member for each of the first sealing members, the second sealing member is sized to completely block the hole of the corresponding first sealing member, and the adjustment step is to raise and lower the second sealing member to further adjust the pressure in the chamber.

14. The exhaust method according to claim 13, wherein the pressure regulating mechanism has a support member that supports the first sealing member and the second sealing member, the support member suspends the first sealing member at a height variable relative to the support member, and fixes the corresponding second sealing member above the first sealing member, and raises and lowers both the first sealing member and the second sealing member, or raises and lowers only the second sealing member chamber by raising and lowering the support member.

15. The exhaust method according to claim 13, wherein the pressure regulating mechanism comprises a first support member to which the first blocking member is fixed, and a second support member that fixes the second blocking member above the first blocking member, the first blocking member is raised and lowered by raising and lowering the first support member by a first lifting mechanism, and the second blocking member is raised and lowered by raising and lowering the second support member by a second lifting mechanism provided separately from the first lifting mechanism.

16. The exhaust method according to claim 9 or 10, wherein in the exhaust step, the exhaust speeds of the exhaust pumps are different from each other.

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