Ion implantation system and ion implantation method

Abstract

An ion implantation system 100 comprises: an implantation processing chamber 14 in which a first holding device 40 and a second holding device 42 are disposed; a first load lock chamber 121; a second load lock chamber 122; a third load lock chamber 123; a fourth load lock chamber 124; a first vacuum conveyance device 70; a second vacuum conveyance device 72; a first cassette 105 which accommodates a first workpiece and a second workpiece; a second cassette 106 which accommodates a third workpiece and a fourth workpiece; and an atmospheric conveyance device 90 which, in an atmospheric environment, conveys the first workpiece or the third workpiece between the first cassette 105 and the first load lock chamber 121 or the third load lock chamber 123 and conveys the second workpiece or the fourth workpiece between the second cassette 106 and the second load lock chamber 122 or the fourth load lock chamber 124.

Description

Ion Implantation System and Ion Implantation Method

[0001] The present disclosure relates to an ion implantation system and an ion implantation method.

[0002] In the semiconductor device manufacturing process, a process of implanting ions into a semiconductor wafer (also referred to as an ion implantation process) is typically carried out for the purpose of changing the conductivity of the semiconductor, changing the crystal structure of the semiconductor, etc. In order to implant ions over the entire surface of the wafer, which is the object to be processed, an ion implantation apparatus is known that is configured to scan an ion beam in the horizontal direction and reciprocate the wafer in the vertical direction (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2021-18904

[0004] It is preferable to further improve the productivity of the ion implantation process using an ion implantation apparatus.

[0005] One exemplary object of an aspect of the present disclosure is to provide a technique for improving the productivity of an ion implantation process.

[0006] To solve the above problems, an ion implantation system in one aspect of the present disclosure is an implantation chamber in which a first holding device and a second holding device are arranged, the implantation chamber being capable of alternately performing ion implantation on a first or third workpiece held in the first holding device and a second or fourth workpiece held in the second holding device in a vacuum environment, a first load lock chamber for handling the first workpiece held in the first holding device and a third load lock chamber for handling the third workpiece held in the first holding device, a second load lock chamber for handling the second workpiece held in the second holding device and a fourth load lock chamber for handling the fourth workpiece held in the second holding device, and the first holding device and the first load lock chamber in a vacuum environment The system comprises a first vacuum conveying device for transporting a first or third workpiece between a lock chamber or a third load lock chamber; a second holding device in a vacuum environment; a second vacuum conveying device for transporting a second or fourth workpiece between a second or fourth load lock chamber; a first cassette for containing the first and second workpieces and a second cassette for containing the third and fourth workpieces in an atmospheric environment; and an atmospheric conveying device for transporting the first or third workpiece between the first cassette and the first or third load lock chamber in an atmospheric environment, and transporting the second or fourth workpiece between the second cassette and the second or fourth load lock chamber.

[0007] Another aspect of the present disclosure is an ion implantation method. This method comprises the steps of: transporting at least a portion of a plurality of first workpieces contained in a first cassette to a first load lock chamber and transporting at least a portion of a plurality of second workpieces contained in a first cassette to a second load lock chamber; alternately ion implanting the first workpieces contained in the first load lock chamber and the second workpieces contained in the second load lock chamber; and, between the ion implantation of the first workpieces contained in the first load lock chamber and the second workpieces contained in the second load lock chamber, transporting at least a portion of a plurality of third workpieces contained in a second cassette to a third load lock chamber and transporting at least a portion of a plurality of fourth workpieces contained in a second cassette to a fourth load lock chamber.

[0008] Furthermore, any combination of the above components, or any substitution of the components or expressions of this disclosure between methods, apparatus, systems, etc., is also valid as a form of this disclosure.

[0009] According to exemplary, non-limiting embodiments of the present invention, techniques for improving the productivity of ion implantation processes can be provided.

[0010] This is a top view showing the schematic configuration of an ion implantation apparatus to which the ion implantation system according to the embodiment is applied. This is a side view showing the schematic configuration of the ion implantation apparatus. This is a front view showing the schematic configuration of the first holding device and the second holding device. Figures 4(a) and 4(b) are top views schematically showing the horizontal orientation of the first workpiece held in the first holding device. Figures 5(a) to 5(c) are side views schematically showing the vertical orientation of the first workpiece held in the first holding device. This is a front view showing an example of the operation of the first and second holding devices. This is a front view showing an example of the operation of the first and second holding devices. This is a front view showing an example of the operation of the first and second holding devices. This is a front view showing an example of the operation of the first and second holding devices. This is a flowchart showing the flow of an ion implantation method using an ion implantation apparatus. This is a top view showing the schematic configuration of the ion implantation system according to the embodiment. This is a diagram for explaining the ion implantation process of a total of 50 workpieces housed in the first and second cassettes. This is a diagram illustrating the ion implantation process for a total of 50 workpieces contained in the first and second cassettes. This is a diagram illustrating the ion implantation process for a total of 50 workpieces contained in the first and second cassettes. This is a diagram illustrating the ion implantation process for a total of 50 workpieces contained in the first and second cassettes. This is a flowchart illustrating the flow of the ion implantation method using an ion implantation system.

[0011] Hereinafter, embodiments for implementing the ion implantation system and ion implantation method according to this disclosure will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant explanations are omitted as appropriate. Furthermore, the configurations described below are illustrative and do not limit the scope of the present invention in any way.

[0012] Figure 1 is a top view showing a schematic configuration of an ion implantation apparatus 10 to which the ion implantation system according to the embodiment is applied. Figure 2 is a side view showing a schematic configuration of the ion implantation apparatus 10 according to the embodiment. The ion implantation apparatus 10 is configured to perform ion implantation on the surfaces of objects to be treated W1 and W2. The objects to be treated W1 and W2 are, for example, substrates and semiconductor wafers. For convenience of explanation, the objects to be treated may be referred to as "substrates" or "wafers" in this specification, but this is not intended to limit the target of the implantation process to a specific object. The objects to be treated may also be large substrates used in the manufacture of flat panel displays (FPDs) (for example, glass substrates or resin substrates).

[0013] The ion implantation apparatus 10 is configured to irradiate the entire surface of the workpieces W1 and W2 with a spot-shaped ion beam by reciprocating an ion beam in a predetermined scanning direction and reciprocating the workpieces W1 and W2 in a direction intersecting the scanning direction. The ion implantation apparatus 10 comprises a beam generator 12, an implantation chamber 14, a vacuum transport device 16, and a control device 18.

[0014] The beam generator 12 is configured to generate an ion beam and transport the ion beam to the implantation chamber 14. The implantation chamber 14 houses the objects W1 and W2 to be implanted. In the implantation chamber 14, the ion beam supplied from the beam generator 12 is irradiated onto the objects W1 and W2. The vacuum transport device 16 is configured to transport the objects W1 and W2 into the implantation chamber 14 before implantation and to transport the objects W1 and W2 out of the implantation chamber 14 after implantation. The control device 18 is configured to control the overall operation of the various devices that constitute the ion implantation apparatus 10. The ion implantation apparatus 10 includes a vacuum evacuation system (not shown) for providing a desired vacuum environment to the beam generator 12, the implantation chamber 14, and the vacuum transport device 16.

[0015] The beam generation apparatus 12 comprises, in order from the upstream side of beamline A, an ion source 20, an extraction unit 22, a mass spectrometry unit 24, a beam shaping unit 26, a beam scanning unit 28, a beam parallelization unit 30, an acceleration / deceleration unit 32, and an energy analysis unit 34. Here, beamline A is used for the sake of explanation and is synonymous with the ideal beam trajectory in design when the ion beam is not scanned by the beam scanning unit 28. Furthermore, the upstream side of beamline A refers to the side closer to the ion source 20, and the downstream side of beamline A refers to the side closer to the injection processing chamber 14 (or beam stopper 38).

[0016] The beam generation apparatus 12 is configured such that beamline A bends along its course. The direction of travel of beamline A changes in the mass spectrometry unit 24 and the energy analysis unit 34. Beamline A is configured to extend in a horizontal plane perpendicular to the vertical direction. For the sake of explanation, in this document, the direction of travel of the ion beam along beamline A is defined as the z direction, the vertical direction as the y direction, and the direction perpendicular to the y and z directions as the x direction. In particular, the direction of travel of beamline A from the ion source 20 to the mass spectrometry unit 24 is defined as the z1 direction, and the direction perpendicular to the y and z1 directions as the x1 direction. Furthermore, the direction of travel of beamline A from the mass spectrometry unit 24 to the energy analysis unit 34 is defined as the z2 direction, and the direction perpendicular to the y and z2 directions as the x2 direction. In addition, the direction of travel of beamline A downstream of the energy analysis unit 34 is defined as the z3 direction, and the direction perpendicular to the y and z3 directions as the x3 direction.

[0017] The ion source 20 is configured to generate ions that constitute an ion beam. The ion source 20 includes an arc chamber 20a. The arc chamber 20a has an internal space 20b where plasma is generated. The arc chamber 20a has a roughly rectangular box shape that partitions the internal space 20b. The arc chamber 20a has a front slit 20c for extracting ions from the plasma generated in the internal space 20b. The front slit 20c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the horizontal opening width of the front slit 20c is larger than the vertical opening width of the front slit 20c.

[0018] The ion source 20 includes a source magnet device 20d. The source magnet device 20d is configured to apply a horizontal (x1 direction) magnetic field B1 to the internal space 20b of the arc chamber 20a. By applying the magnetic field B1, the source magnet device 20d increases the plasma generation efficiency generated in the internal space 20b of the arc chamber 20a. The direction in which the magnetic field B1 is applied by the source magnet device 20d corresponds to the longitudinal direction of the front slit 20c.

[0019] The extraction unit 22 is located downstream of the ion source 20. The extraction unit 22 extracts ions from the ion source 20 to generate an ion beam. The extraction unit 22 is configured to extract ions from the plasma generated in the internal space 20b of the arc chamber 20a. The extraction unit 22 comprises a first extraction electrode 22a and a second extraction electrode 22b. The first extraction electrode 22a is located downstream of the arc chamber 20a, and the second extraction electrode 22b is located downstream of the first extraction electrode 22a. A negative suppression voltage is applied to the first extraction electrode 22a. A ground voltage is applied to the second extraction electrode 22b. A positive extraction voltage is applied to the arc chamber 20a.

[0020] The first extraction electrode 22a has a first extraction opening 22c through which the ion beam passes. The first extraction opening 22c has a slit shape similar to the front slit 20c, with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). In other words, the horizontal opening width of the first extraction opening 22c is greater than the vertical opening width of the first extraction opening 22c. The second extraction electrode 22b has a second extraction opening 22d through which the ion beam passes. The second extraction opening 22d has a slit shape similar to the front slit 20c, with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction). In other words, the horizontal opening width of the second extraction opening 22d is greater than the vertical opening width of the second extraction opening 22d.

[0021] The ion beam extracted by the extraction section 22 may be a ribbon-shaped beam that spreads horizontally (in the x1 direction). By increasing the horizontal opening width of the front slit 20c, the first extraction opening 22c, and the second extraction opening 22d, the horizontal size of the ribbon-shaped beam can be increased. As a result, it becomes easier to increase the beam current of the ion beam extracted from the ion source 20.

[0022] The mass spectrometry unit 24 is located downstream of the extraction unit 22. The mass spectrometry unit 24 is configured to select the required ion species from the ion beam extracted by the extraction unit 22 using mass spectrometry. The mass spectrometry unit 24 comprises a mass spectrometry magnet device 24a, a mass spectrometry slit 24b, and an injector Faraday cup 24c.

[0023] The mass spectrometry magnet apparatus 24a applies a magnetic field B2 to the ion beam, deflecting it along different paths depending on the value of the ion's mass-to-charge ratio M = m / q (where m is mass and q is charge). The mass spectrometry magnet apparatus 24a applies a magnetic field B2 in the vertical direction (-y direction), deflecting the ion beam in the horizontal direction (x1 direction). The intensity of the magnetic field B2 applied by the mass spectrometry magnet apparatus 24a is adjusted so that ion species with a desired mass-to-charge ratio M pass through the mass spectrometry slit 24b. The ion beam passing through the mass spectrometry slit 24b is deflected by 90 degrees by the mass spectrometry magnet apparatus 24a, for example.

[0024] The mass spectrometry slit 24b is located downstream of the mass spectrometry magnet device 24a. The mass spectrometry slit 24b has a slit shape with a short opening width in the horizontal direction (x2 direction) and a long opening width in the vertical direction (y direction). In other words, the vertical opening width of the mass spectrometry slit 24b is larger than the horizontal opening width of the mass spectrometry slit 24b.

[0025] The mass spectrometry slit 24b may be configured to have a variable aperture width (i.e., slit width) in the horizontal direction (x2 direction) for adjusting the mass resolution. The mass spectrometry slit 24b may be composed of two beam shields that are movable in the slit width direction, and the slit width may be adjustable by changing the distance between the two beam shields. The mass spectrometry slit 24b may be configured to have a variable slit width by switching to one of a plurality of slits with different slit widths.

[0026] The injector-Faraday cup 24c is located downstream of the mass spectrometry slit 24b. The injector-Faraday cup 24c measures the beam current of the mass-spectrometry-analyzed ion beam passing through the mass spectrometry slit 24b. The injector-Faraday cup 24c can measure the mass spectrometry spectrum of the ion beam by measuring the beam current while changing the magnetic field strength of the mass spectrometry magnet device 24a. The measured mass spectrometry spectrum can be used to calculate the mass resolution of the mass spectrometry unit 24.

[0027] The injector Faraday cup 24c is configured to be able to be moved in and out of beamline A by the operation of the injector drive unit 24d. The injector drive unit 24d moves the injector Faraday cup 24c in a direction perpendicular to the z2 direction in which beamline A extends (for example, the x2 direction). When the injector Faraday cup 24c is positioned on beamline A as shown by the dashed line in Figure 1, it blocks the ion beam moving downstream. On the other hand, when the injector Faraday cup 24c is retracted from beamline A as shown by the solid line in Figure 1, the blocking of the ion beam moving downstream is released.

[0028] A magnetic shield 23 may be provided between the extraction section 22 and the mass spectrometry section 24. The magnetic shield 23 is configured to suppress magnetic field interference between the magnetic field B1 applied to the ion source 20 and the magnetic field B2 applied to the mass spectrometry section 24. The magnetic shield 23 is made of a magnetic material such as electrical steel sheet. The magnetic shield 23 has a through-aperture 23a through which the ion beam from the extraction section 22 toward the mass spectrometry section 24 passes. The through-aperture 23a may have a slit shape with a longer opening width in the horizontal direction (x1 direction) and a shorter opening width in the vertical direction (y direction), similar to the front slit 20c. In other words, the horizontal opening width of the through-aperture 23a may be greater than the vertical opening width of the through-aperture 23a.

[0029] The beam shaping unit 26 is located downstream of the mass spectrometry unit 24. The beam shaping unit 26 is configured to shape the ion beam that has passed through the mass spectrometry unit 24 into a desired cross-sectional shape and convergence / divergence angle. The beam shaping unit 26 includes a lens device for adjusting at least one of the cross-sectional shape and convergence / divergence angle of the ion beam. For example, the beam shaping unit 26 is configured to focus a horizontally spread ribbon-shaped ion beam and shape it into a spot-shaped ion beam.

[0030] The beam shaping unit 26 includes a plurality of lens devices, for example, three lens devices 26a, 26b, and 26c. The three lens devices 26a to 26c are configured, for example, as an electric field type triple quadrupole lens (also called a triplet Q lens). By using a combination of the plurality of lens devices, the beam shaping unit 26 can independently adjust the convergence or divergence of the ion beam in both the horizontal direction (x2 direction) and the vertical direction (y direction). The beam shaping unit 26 may also include a magnetic field type lens device. The beam shaping unit 26 may also include a lens device that shapes the ion beam using both electric and magnetic fields.

[0031] The beam scanning unit 28 is located downstream of the beam shaping unit 26. The beam scanning unit 28 is configured to generate a scan beam SB by reciprocating the ion beam in a predetermined scanning direction. The beam scanning unit 28 can also be described as a beam deflection device that deflects the ion beam shaped by the beam shaping unit 26 in a predetermined scanning direction. The beam scanning unit 28 is configured such that the scanning direction is different from the horizontal direction; for example, the scanning direction is configured to be the vertical direction (y-direction).

[0032] The beam scanning unit 28 includes a pair of scanning electrodes 28a and 28b facing each other in the vertical direction (y direction). The pair of scanning electrodes 28a and 28b are connected to a variable voltage power supply (not shown). By periodically changing the voltage applied between the pair of scanning electrodes 28a and 28b, the electric field generated between the pair of scanning electrodes 28a and 28b is changed, thereby deflecting the ion beam to various angles. As a result, the ion beam is scanned across the entire scanning range in the vertical direction (y direction). In Figure 2, the arrow Y illustrates the scanning direction and scanning range of the ion beam, and the multiple trajectories of the ion beam within the scanning range are shown by dashed lines. Note that the beam scanning unit 28 may be magnetic field type instead of electric field type. The beam scanning unit 28 may also include a magnet device for deflecting the ion beam.

[0033] The beam parallelization unit 30 is located downstream of the beam scanning unit 28. The beam parallelization unit 30 is configured to make the direction of travel of the ion beam, which has been scanned back and forth by the beam scanning unit 28, parallel to the direction of beamline A. The beam parallelization unit 30 has a plurality of arc-shaped parallelization lens electrodes 30a, 30b, each with an ion beam passage slit in the center in the horizontal direction (x2 direction). The parallelization lens electrodes 30a, 30b are connected to a high-voltage power supply (not shown), and the electric field generated by the voltage application acts on the ion beam to parallelize the direction of travel of the ion beam. Note that the beam parallelization unit 30 may be magnetic field type instead of electric field type. The beam parallelization unit 30 may also be equipped with a magnet device for deflecting the ion beam.

[0034] The acceleration / deceleration unit 32 is located downstream of the beam parallelization unit 30. The acceleration / deceleration unit 32 is configured to accelerate or decelerate the scan beam that has been parallelized by the beam parallelization unit 30. The acceleration / deceleration unit 32 is an electrostatic acceleration / deceleration device that accelerates or decelerates the ion beam by utilizing the potential difference between a first potential applied to the upstream side of the acceleration / deceleration unit 32 and a second potential applied to the downstream side of the acceleration / deceleration unit 32.

[0035] The energy analysis unit 34 is located downstream of the acceleration / deceleration unit 32. The energy analysis unit 34 is configured to analyze the energy of the ion beam and pass ions with the desired energy toward the implantation chamber 14. The energy analysis unit 34 is an angular energy filter (AEF) that deflects the ion beam horizontally and selects the desired energy based on the deflection angle θ. The deflection angle θ is, for example, between 10 degrees and 20 degrees, and is about 15 degrees. The energy analysis unit 34 comprises an AEF electrode pair 34a, 34b and an energy analysis slit 34c.

[0036] The AEF electrode pair 34a and 34b are arranged to face each other in a direction perpendicular to the scanning direction. The AEF electrode pair 34a and 34b are arranged to face each other in the horizontal direction (x2 direction or x3 direction). The AEF electrode pair 34a and 34b are connected to a high-voltage power supply (not shown) and deflect the ion beam by applying an electric field. The AEF electrode pair 34a and 34b are deflection devices that deflect the scan beam in the horizontal direction. The energy analysis slit 34c is provided downstream of the AEF electrode pair 34a and 34b.

[0037] The energy analysis slit 34c has a slit shape with a long opening width in the vertical direction (y direction) and a short opening width in the horizontal direction (x3 direction). In other words, the vertical opening width of the energy analysis slit 34c is larger than the horizontal opening width of the energy analysis slit 34c. The energy analysis slit 34c allows ion beams of a desired energy value or energy range to pass towards the workpieces W1 and W2, while shielding other ion beams.

[0038] The energy analysis unit 34 may be of the magnetic field type instead of the electric field type. The energy analysis unit 34 may be equipped with a magnetic device for magnetic field deflection. The energy analysis unit 34 may utilize both electric and magnetic fields, and may be equipped with an AEF electrode pair for electric field deflection and a magnetic device for magnetic field deflection.

[0039] In this manner, the beam generator 12 supplies an ion beam to be irradiated onto the objects W1 and W2 to the injection chamber 14. The beam generator 12 may also be called a beamline device. The beam generator 12 is configured to generate an ion beam that achieves desired injection conditions by adjusting the operating parameters of the various devices that constitute the beam generator 12.

[0040] The injection processing chamber 14 includes a plasma shower device 36, a beam stopper 38, a first holding device 40, and a second holding device 42.

[0041] The plasma shower device 36 is located downstream of the energy analysis unit 34. The plasma shower device 36 supplies low-energy electrons to the ion beam and the surfaces (workpieces W1 and W2) according to the beam current of the ion beam, suppressing charge-up caused by the accumulation of positive charge on the workpieces during ion implantation. The plasma shower device 36 comprises, for example, a shower tube 36a through which the ion beam passes and a plasma generation unit 36b that supplies electrons into the shower tube 36a. The shower tube 36a has a shape with a long opening width in the vertical direction (y direction) and a short opening width in the horizontal direction (x3 direction).

[0042] The beam stopper 38 is located at the downstream end of beamline A and is attached, for example, to the side wall of the injection chamber 14. When there are no objects to be processed W1 and W2 in beamline A, the ion beam is incident on the beam stopper 38. The beam stopper 38 is provided with a plurality of tuning cups 38a, 38b, 38c, and 38d. The plurality of tuning cups 38a to 38d are Faraday cups configured to measure the beam current of the ion beam incident on the beam stopper 38. The plurality of tuning cups 38a to 38d are arranged, for example, with spacing in the vertical direction (y direction).

[0043] The first holding device 40 is configured to be able to hold the first workpiece W1 to be subjected to the injection process. The first holding device 40 is configured to reciprocate the first workpiece W1 held by the first holding device 40 in a direction crossing the scan beam. The first holding device 40 is configured to reciprocate the first workpiece W1 in the horizontal direction (x3 direction). The first holding device 40 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0044] The first holding device 40 includes a first chuck mechanism 50, a first twist mechanism 52, a first vertical angle adjustment mechanism 54, a first horizontal angle adjustment mechanism 56, and a first reciprocating motion mechanism 58.

[0045] The first chuck mechanism 50 is configured to contact the back surface of the first workpiece W1 and hold the first workpiece W1. The first chuck mechanism 50 includes, for example, an electrostatic chuck or the like for holding the first workpiece W1. The first chuck mechanism 50 may include a temperature adjustment mechanism for cooling or heating the first workpiece W1. The first chuck mechanism 50 includes a first lift mechanism for lifting the first workpiece W1 so that the first workpiece W1 is separated from the first chuck mechanism 50.

[0046] The first twist mechanism 52 rotatably supports the first chuck mechanism 50. The first twist mechanism 52 rotates the first chuck mechanism 50 around a rotation axis (also referred to as a twist axis) extending in the normal direction of the processing surface of the first workpiece W1 held by the first chuck mechanism 50, and adjusts the twist angle φa1 of the first workpiece W1. The first twist mechanism 52 adjusts, for example, the twist angle φa1 between an alignment mark provided on the outer peripheral portion of the first workpiece W1 and a reference position. Here, the alignment mark of the first workpiece W1 refers to, for example, a notch or an orifice provided on the outer peripheral portion of a wafer, and is a mark serving as a reference for the angular position in the crystal axis direction or the circumferential direction of the wafer.

[0047] The first vertical angle adjustment mechanism 54 rotatably supports the first twist mechanism 52. The first vertical angle adjustment mechanism 54 rotates the first twist mechanism 52 around a horizontally extending rotation axis (also called the transport tilt axis) to adjust the vertical orientation of the first workpiece W1. The vertical orientation of the first workpiece W1 can be defined by the vertical rotation angle φb1 around the horizontal rotation axis.

[0048] The first horizontal angle adjustment mechanism 56 rotatably supports the first vertical angle adjustment mechanism 54. The first horizontal angle adjustment mechanism 56 rotates the first vertical angle adjustment mechanism 54 around a rotation axis (also called the injection tilt axis) that extends in the vertical direction, thereby adjusting the horizontal orientation of the first workpiece W1. The horizontal orientation of the first workpiece W1 can be defined by the horizontal rotation angle φc1 around the rotation axis in the vertical direction.

[0049] The first reciprocating motion mechanism 58 is configured to move the first horizontal angle adjustment mechanism 56 in the horizontal direction (x3 direction). The first reciprocating motion mechanism 58 moves the first horizontal angle adjustment mechanism 56 along the guide rail 44. The first reciprocating motion mechanism 58 includes, for example, a first ball screw 58a that extends horizontally (x3 direction) along the guide rail 44. The first reciprocating motion mechanism 58 moves the first horizontal angle adjustment mechanism 56 linearly in the horizontal direction by rotating the first ball screw 58a.

[0050] The second holding device 42 is configured to hold the second workpiece W2 that is to be injected. The second holding device 42 is configured to reciprocate the second workpiece W2 held by the second holding device 42 in a direction that crosses the scan beam. The second holding device 42 is configured to reciprocate the second workpiece W2 in the horizontal direction (x3 direction). The second holding device 42 is movable along a guide rail 44 that extends in the horizontal direction (x3 direction).

[0051] The second holding device 42 can be configured in the same way as the first holding device 40. The second holding device 42 is movable in the same direction as the first holding device 40. The second holding device 42 is movable along a guide rail 44 common to the first holding device 40. However, the second holding device 42 may be configured to be movable along a different guide rail than the first holding device 40. In other words, the injection processing chamber 14 may be provided with a first guide rail for the movement of the first holding device 40 and a second guide rail for the movement of the second holding device 42. The second holding device 42 is movable simultaneously with the first holding device 40. The second holding device 42 is movable independently of the first holding device 40.

[0052] The second holding device 42 includes a second chuck mechanism 60, a second twist mechanism 62, a second vertical angle adjustment mechanism 64, a second horizontal angle adjustment mechanism 66, and a second reciprocating motion mechanism 68.

[0053] The second chuck mechanism 60 is configured to hold the second workpiece W2 by contacting its back surface. The second chuck mechanism 60 includes, for example, an electrostatic chuck for holding the second workpiece W2. The second chuck mechanism 60 may also include a temperature control mechanism for cooling or heating the second workpiece W2. The second chuck mechanism 60 includes a second lift mechanism for lifting the second workpiece W2 so that it moves away from the second chuck mechanism 60.

[0054] The second twist mechanism 62 rotatably supports the second chuck mechanism 60. The second twist mechanism 62 rotates the second chuck mechanism 60 around a rotation axis (also called a twist axis) that extends in the direction normal to the surface of the second workpiece W2 held by the second chuck mechanism 60, thereby adjusting the twist angle φa2 of the second workpiece W2. For example, the second twist mechanism 62 adjusts the twist angle φa2 between an alignment mark provided on the outer circumference of the second workpiece W2 and a reference position.

[0055] The second vertical angle adjustment mechanism 64 rotatably supports the second twist mechanism 62. The second vertical angle adjustment mechanism 64 rotates the second twist mechanism 62 around a horizontally extending rotation axis (also called the transport tilt axis) to adjust the vertical orientation of the second workpiece W2. The vertical orientation of the second workpiece W2 can be defined by the vertical rotation angle φb2 around the horizontal rotation axis.

[0056] The second horizontal angle adjustment mechanism 66 rotatably supports the second vertical angle adjustment mechanism 64. The second horizontal angle adjustment mechanism 66 rotates the second vertical angle adjustment mechanism 64 around a vertically extending rotation axis (also called the injection tilt axis) to adjust the horizontal orientation of the second workpiece W2. The horizontal orientation of the second workpiece W2 can be defined by the horizontal rotation angle φc2 around the vertical rotation axis.

[0057] The second reciprocating motion mechanism 68 is configured to move the second horizontal angle adjustment mechanism 66 in the horizontal direction (x3 direction). The second reciprocating motion mechanism 68 moves the second horizontal angle adjustment mechanism 66 along the guide rail 44. The second reciprocating motion mechanism 68 includes, for example, a second ball screw 68a that extends horizontally (x3 direction) along the guide rail 44, and rotates the second ball screw 68a to move the second horizontal angle adjustment mechanism 66 linearly in the horizontal direction.

[0058] The vacuum conveying device 16 comprises a first vacuum conveying device 70 and a second vacuum conveying device 72. The first vacuum conveying device 70 and the second vacuum conveying device 72 are positioned horizontally (in the x3 direction) away from the beamline A. In the example in Figure 1, the first vacuum conveying device 70 is positioned in the -x3 direction away from the beamline A, and the second vacuum conveying device 72 is positioned in the +x3 direction away from the beamline A. The first vacuum conveying device 70 and the second vacuum conveying device 72 are positioned, for example, such that a beam stopper 38 is located between the first vacuum conveying device 70 and the second vacuum conveying device 72.

[0059] The first vacuum conveying device 70 is configured to transport the first object to be processed W1 before injection processing into the injection processing chamber 14 and to transport the first object to be processed W1 after injection processing out of the injection processing chamber 14. The first vacuum conveying device 70 transports the first object to be processed W1 into the first holding device 40 and transports the first object to be processed W1 out of the first holding device 40. The first vacuum conveying device 70 includes, for example, a first vacuum conveying robot (not shown) for transporting the first object to be processed W1. The first vacuum conveying device 70 transports the first object to be processed W1 through a first conveying port 74 provided in the side wall of the injection processing chamber 14.

[0060] The second vacuum conveying device 72 is configured to transport the second workpiece W2 before injection processing into the injection processing chamber 14 and to transport the second workpiece W2 after injection processing out of the injection processing chamber 14. The second vacuum conveying device 72 transports the second workpiece W2 into the second holding device 42 and transports the second workpiece W2 out of the second holding device 42. The second vacuum conveying device 72 includes, for example, a second vacuum conveying robot (not shown) for transporting the second workpiece W2. The second vacuum conveying device 72 transports the second workpiece W2 through a second transport port 76 provided in the side wall of the injection processing chamber 14.

[0061] The control device 18 controls the overall operation of the ion implanter 10. Hardware-wise, the control device 18 is implemented using components and mechanical devices, including a computer's CPU and memory; software-wise, it is implemented using computer programs. The various functions provided by the control device 18 can be realized through the cooperation of hardware and software.

[0062] The control device 18 includes a processor 18a, such as a CPU (Central Processing Unit), and a memory 18b, such as a ROM (Read Only Memory) or RAM (Random Access Memory). The control device 18 controls the overall operation of the ion implanter 10 according to a program, for example, by having the processor 18a execute a program stored in the memory 18b. The processor 18a may execute a program stored in any storage device different from the memory 18b, or it may execute a program obtained from any recording medium by a reading device, or it may execute a program obtained via a network. The memory 18b in which the program is stored may be a volatile memory such as a DRAM (Dynamic Random Access Memory), or a non-volatile memory such as an EEPROM (Electrically Erasable Programmable Read-Only Memory), flash memory, magnetoresistive memory, resistive random-access memory, or ferroelectric memory. Magnetic recording media such as non-volatile memory, magnetic tapes, and magnetic disks, as well as optical recording media such as optical disks, are examples of non-transitory, tangible, and computer-readable storage media.

[0063] The various functions provided by the control device 18 may be realized by a single device comprising a processor 18a and a memory 18b, or by the cooperation of multiple devices, each comprising a processor 18a and a memory 18b.

[0064] Figure 3 is a front view showing the schematic configuration of the first holding device 40 and the second holding device 42, and shows the configuration as viewed in the beam propagation direction (z3 direction) in the injection processing chamber 14. In Figure 3, the first holding device 40 is positioned at the first transport position 80, and the second holding device 42 is positioned at the second transport position 82. The first transport position 80 is the position for loading the first workpiece W1 into or out of the first holding device 40 through the first transport port 74. The first transport position 80 corresponds to the position of the first transport port 74. The second transport position 82 is the position for loading the second workpiece W2 into or out of the second holding device 42 through the second transport port 76. The second transport position 82 corresponds to the position of the second transport port 76. The first transport position 80 and the second transport position 82 are located horizontally (in the x3 direction) away from the injection position 84 for irradiating the workpieces W1 and W2 with an ion beam.

[0065] The injection position 84 is located in the center of the injection processing chamber 14 in the horizontal direction (x3 direction). The injection position 84 is located between the first transport position 80 and the second transport position 82. The injection position 84 includes the injection center position 84C, the injection left end position 84L, and the injection right end position 84R. In Figure 3, the workpieces WC, WL, and WR located at the injection center position 84C, the injection left end position 84L, and the injection right end position 84R are shown by dashed lines. The injection center position 84C corresponds to the position to which the scan beam SB generated by the beam generator 12 is irradiated. The injection left end position 84L is a position shifted to the left of the injection center position 84C (in the +x3 direction in Figure 3), and is set so that the entire surface of the workpiece WL placed at the injection left end position 84L does not overlap with the scan beam SB. The injection right end position 84R is located to the right of the injection center position 84C (in the -x3 direction in Figure 3), and is set so that the entire surface of the workpiece WR placed at the injection right end position 84R does not overlap with the scan beam SB.

[0066] Size h of the vertical (y-direction) irradiation range of the scan beam SB Ｂ This is the size h in the vertical direction (y direction) of the surface to be processed of the objects W1 and W2. Ｗ Larger than. Vertical size h of scan beam SB. ＢFor example, h is the vertical size of the surface to be processed of the objects W1 and W2. Ｗ It is 1.1 times or more and 3 times or less, preferably 1.2 times or more and 2 times or less.

[0067] The first holding device 40 reciprocates horizontally (in the x3 direction) at the injection position 84, thereby irradiating the entire surface of the first workpiece W1 with the scan beam SB. The first holding device 40 reciprocates within a movement range C from the left injection end position 84L to the right injection end position 84R, thereby irradiating the entire surface of the first workpiece W1 with the scan beam SB. The first holding device 40 moves to the first transport position 80, enabling the first workpiece W1 to be loaded or unloaded. The first holding device 40 is movable between the injection position 84 and the first transport position 80. The first holding device 40 is movable within a first movable range E1 from the first transport position 80 to the left injection end position 84L. The first holding device 40 is not movable to the second transport position 82.

[0068] The second holding device 42 reciprocates horizontally (in the x3 direction) at the injection position 84, thereby irradiating the entire surface of the second workpiece W2 with the scan beam SB. The second holding device 42 reciprocates within the movement range C from the left injection end position 84L to the right injection end position 84R, thereby irradiating the entire surface of the second workpiece W2 with the scan beam SB. The second holding device 42 moves to the second transport position 82, enabling the second workpiece W2 to be loaded or unloaded. The second holding device 42 is movable between the injection position 84 and the second transport position 82. The second holding device 42 is movable within the second movable range E2 from the second transport position 82 to the right injection end position 84R. The second holding device 42 is not movable to the first transport position 80.

[0069] The first injection position for irradiating the first workpiece W1, held by the first holding device 40, with an ion beam is the same as the second injection position for irradiating the second workpiece W2, held by the second holding device 42, with an ion beam. In other words, the first and second injection positions coincide with a common injection position 84. Furthermore, the first movement range in which the first holding device 40 reciprocates the first workpiece W1 at the first injection position is the same as the second movement range in which the second holding device 42 reciprocates the second workpiece W2 at the second injection position. In other words, the first and second movement ranges coincide with a common movement range C. The first and second movement ranges overlap when viewed in the direction of beam propagation. The vertical position of the first workpiece W1, held by the first holding device 40 at the first injection position, is the same as the vertical position of the second workpiece W2, held by the second holding device 42 at the second injection position. The position of the first workpiece W1 held by the first holding device 40 at the first injection position in the beam propagation direction is the same as the position of the second workpiece W2 held by the second holding device 42 at the second injection position in the beam propagation direction. Therefore, the first holding device 40 and the second holding device 42 are configured to allow the first workpiece W1 and the second workpiece W2 to reciprocate in the same way relative to the scan beam SB. Thus, the first workpiece W1 and the second workpiece W2 are irradiated with the scan beam SB in a common injection environment.

[0070] Figures 4(a) and 4(b) are schematic top views showing the horizontal orientation of the first workpiece W1 held by the first holding device 40. Figures 4(a) and 4(b) show the change in the horizontal orientation of the first workpiece W1 by the first horizontal angle adjustment mechanism 56. The same applies to the horizontal orientation of the second workpiece W2 held by the second holding device 42.

[0071] Figures 4(a) and 4(b) show the orientation of the first workpiece W1 during the injection process in which the scan beam SB is irradiated onto the first workpiece W1. Figure 4(a) shows the case where the surface of the first workpiece W1 is perpendicular to the direction of travel of the scan beam SB (z3 direction). Figure 4(b) shows the case where the surface of the first workpiece W1 intersects the direction of travel of the scan beam SB (z3 direction) at an angle. In Figure 4(b), the surface of the first workpiece W1 has a horizontal tilt angle α1 with respect to the direction of travel of the scan beam SB (z3 direction). The horizontal tilt angle α1 indicates the horizontal inclination of the incident direction of the scan beam SB with respect to the normal to the surface of the first workpiece W1. The first holding device 40 can adjust the horizontal tilt angle α1 of the first workpiece W1 by driving the first horizontal angle adjustment mechanism 56 to adjust the horizontal rotation angle φc1. The first holding device 40 is configured to allow adjustment of the horizontal tilt angle α1 during ion implantation, for example, within a range of ±30 degrees or ±60 degrees.

[0072] Figures 5(a) to 5(c) are schematic side views showing the vertical orientation of the first workpiece W1 held by the first holding device 40. Figures 5(a) to 5(c) show the change in the vertical orientation of the first workpiece W1 by the first vertical angle adjustment mechanism 54. The same applies to the vertical orientation of the second workpiece W2 held by the second holding device 42.

[0073] Figure 5(a) shows an example of the orientation of the first workpiece W1 in the injection process in which the scan beam SB is irradiated onto the first workpiece W1. In Figure 5(a), the first holding device 40 holds the first workpiece W1 such that the surface of the first workpiece W1 is oriented perpendicular to the direction of travel of the scan beam SB (z3 direction). In other words, the first holding device 40 holds the first workpiece W1 in an orientation in which the surface of the first workpiece W1 is not aligned with the horizontal direction. In the example of Figure 5(a), the first holding device 40 holds the first workpiece W1 in an orientation in which the surface of the first workpiece W1 is aligned with the vertical direction.

[0074] Figure 5(b) shows another example of the orientation of the first workpiece W1 in the injection process in which the scan beam SB is irradiated onto the first workpiece W1. In Figure 5(b), the first holding device 40 holds the first workpiece W1 in a orientation in which the surface to be processed of the first workpiece W1 is inclined with respect to the vertical direction. In Figure 5(b), the first holding device 40 holds the first workpiece W1 in a orientation in which the surface to be processed of the first workpiece W1 is not aligned with the horizontal direction. In Figure 5(b), the surface to be processed of the first workpiece W1 has a vertical tilt angle β1 with respect to the direction of travel of the scan beam SB (z3 direction). The vertical tilt angle β1 indicates the inclination in the vertical direction of the incident direction of the scan beam SB with respect to the normal of the surface to be processed of the first workpiece W1. The first holding device 40 can adjust the vertical tilt angle β1 by driving the first vertical angle adjustment mechanism 54 to adjust the vertical rotation angle φb1. The first holding device 40 is configured to allow adjustment of the vertical tilt angle β1 within a range of, for example, ±30 degrees or ±60 degrees during ion implantation.

[0075] Figure 5(c) shows the orientation of the first workpiece W1 in the transport process of loading the first workpiece W1 into or unloading it from the first holding device 40. In Figure 5(c), the first holding device 40 holds the first workpiece W1 with its processing surface aligned horizontally. In Figure 5(c), the first holding device 40 lifts the first workpiece W1 using the first lift mechanism 50a so that the first workpiece W1 moves away from the first chuck mechanism 50. This allows the arm of the first vacuum transport robot, which loads or unloads the first workpiece W1, to be inserted into the gap 50b between the first chuck mechanism 50 and the first workpiece W1. However, it is not essential that the arm of the first vacuum transport robot be inserted into the gap 50b between the first chuck mechanism 50 and the first workpiece W1. The arm of the first vacuum transfer robot may be configured to support the outer periphery of the first workpiece W1 rather than its back surface. In this case, the gap 50b may be very small.

[0076] Figures 6 to 9 are front views showing an example of the operation of the first holding device 40 and the second holding device 42. Figure 6 shows the situation in which the first injection process into the first workpiece W1 is being carried out. In Figure 6, the first holding device 40 is positioned at the injection position 84, and the second holding device 42 is positioned at the second transport position 82. The first holding device 40 reciprocates horizontally at the injection position 84 as indicated by the arrow X for the injection process into the first workpiece W1. The second holding device 42 lifts up the second workpiece W2 at the second transport position 82 using the second lift mechanism 60a in order to transport the second workpiece W2 after the injection process through the second transport port 76. The second holding device 42 receives the second workpiece W2 at the second transport position 82 using the second lift mechanism 60a in order to transport the second workpiece W2 before the injection process through the second transport port 76.

[0077] In Figure 6, the first holding device 40 holds the first workpiece W1 so that the scan beam SB is irradiated onto the surface of the first workpiece W1. The first holding device 40 may hold the first workpiece W1 in a direction where the horizontal tilt angle α1 is 0, for example, as shown in Figure 4(a). The first holding device 40 may hold the first workpiece W1 in a direction where the vertical tilt angle β1 is 0, for example, as shown in Figure 5(a). The first holding device 40 may hold the first workpiece W1 in a direction where the horizontal tilt angle α1 is not 0, as shown in Figure 4(b). The first holding device 40 may hold the first workpiece W1 in a direction where the vertical tilt angle β1 is not 0, as shown in Figure 5(b). The first holding device 40 may hold the first workpiece W1 in a direction where neither the horizontal tilt angle α1 nor the vertical tilt angle β1 is 0.

[0078] In Figure 6, the second holding device 42 holds the second workpiece W2 in an orientation that allows for loading or unloading of the second workpiece W2 through the second transport port 76. Similar to Figure 5(c), the second holding device 42 holds the second workpiece W2 with its processing surface aligned horizontally. The second holding device 42 lifts up the second workpiece W2 using the second lift mechanism 60a, forming a gap 60b between the second chuck mechanism 60 and the second workpiece W2. The second vacuum transport device 72 unloads the second workpiece W2 after the injection process by inserting the arm of the second vacuum transport robot into the gap 60b between the second chuck mechanism 60 and the second workpiece W2. When the second workpiece W2, which is to be processed before injection, is placed on the second lift mechanism 60a by the arm of the second vacuum transfer robot, the second holding device 42 releases the lift-up of the second workpiece W2 and holds the second workpiece W2 in the second chuck mechanism 60. After holding the second workpiece W2, which is to be processed before injection, the second holding device 42 drives the second vertical angle adjustment mechanism 64 to change the vertical rotation angle φb2 and holds the second workpiece W2 in an orientation in which the surface to be processed W2 is not aligned with the horizontal direction.

[0079] Figure 7 shows the transition from the first injection process to the first workpiece W1 to the second injection process to the second workpiece W2. In other words, it shows the situation where the first injection process to the first workpiece W1 is completed and the second injection process to the second workpiece W2 is started. In Figure 7, the first holding device 40 moves from the injection position 84 towards the first transport position 80 as indicated by arrow F1, and the second holding device 42 moves from the second transport position 82 towards the injection position 84 as indicated by arrow F2. As shown in Figure 7, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required to switch from the first injection process to the second injection process can be shortened.

[0080] In Figure 7, the first holding device 40 and the second holding device 42 can be moved so as to maintain a relative distance d between the first workpiece W1 held in the first holding device 40 and the second workpiece W2 held in the second holding device 42. For example, the relative distance d can be kept constant by making the moving speeds of the first holding device 40 and the second holding device 42 the same. Alternatively, the first holding device 40 and the second holding device 42 can be moved so as to maintain the relative distance d within a predetermined range from an upper limit to a lower limit by adjusting their moving speeds. In this case, the moving speed of the first holding device 40 may be faster or slower than the moving speed of the second holding device 42. In the case of ion implantation that provides a uniform dose distribution horizontally to the workpiece, it is preferable that the relative distance d be as small as possible. In the case of ion implantation that provides a non-uniform dose distribution horizontally to the workpiece, it is preferable that the relative distance d is larger than the horizontal (x3 direction) size of the scan beam SB.

[0081] In Figure 7, the movement speed of the first holding device 40, which holds the first workpiece W1 at the end of the injection process, may be the maximum speed that the first holding device 40 can achieve. By moving the first holding device 40 at the maximum speed, the time required from the completion of the first injection process to the first workpiece W1 to the removal of the first workpiece W1 can be shortened, thereby improving productivity. On the other hand, the movement speed of the second holding device 42, which holds the second workpiece W2 at the start of the injection process, may be determined according to the injection conditions of the second workpiece W2. By moving the second holding device 42 at a movement speed corresponding to the injection conditions, the second injection process to the second workpiece W2 can be started at the same movement speed after the second workpiece W2 has moved to the injection position 84. This allows the start of the second injection process to be accelerated, thereby improving productivity.

[0082] Figure 8 shows the situation during the second injection process into the second workpiece W2. In Figure 8, the second holding device 42 is positioned at the injection position 84, and the first holding device 40 is positioned at the first transport position 80. The second holding device 42 reciprocates horizontally at the injection position 84 as indicated by arrow X for the injection process into the second workpiece W2. The first holding device 40 lifts up the first workpiece W1 at the first transport position 80 using the first lift mechanism 50a in order to transport the first workpiece W1 after the injection process through the first transport port 74. The first holding device 40 receives the first workpiece W1 at the first transport position 80 using the first lift mechanism 50a in order to transport the first workpiece W1 before the injection process through the first transport port 74.

[0083] In Figure 8, the second holding device 42 holds the second workpiece W2 so that the scan beam SB is irradiated onto the surface of the second workpiece W2. The second holding device 42 holds the second workpiece W2 in a direction where the horizontal tilt angle α2 is 0, for example, as in Figure 4(a). The second holding device 42 holds the second workpiece W2 in a direction where the vertical tilt angle β2 is 0, for example, as in Figure 5(a). The second holding device 42 may hold the second workpiece W2 in a direction where the horizontal tilt angle α2 is not 0, as in Figure 4(b). The second holding device 42 may hold the second workpiece W2 in a direction where the vertical tilt angle β2 is not 0, as in Figure 5(b). The second holding device 42 may hold the second workpiece W2 in a direction where neither the horizontal tilt angle α2 nor the vertical tilt angle β2 is 0.

[0084] In Figure 8, the first holding device 40 holds the first workpiece W1 in an orientation that allows for loading or unloading of the first workpiece W1 through the first transport port 74. As shown in Figure 5(c), the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is oriented horizontally. The first holding device 40 lifts up the first workpiece W1 using the first lift mechanism 50a, forming a gap 50b between the first chuck mechanism 50 and the first workpiece W1. The first vacuum transport device 70 unloads the first workpiece W1 after the injection process by inserting the arm of the first vacuum transport robot into the gap 50b between the first chuck mechanism 50 and the first workpiece W1. When the first object to be processed W1 before injection processing is placed on the first lift mechanism 50a by the arm of the first vacuum transfer robot, the first holding device 40 releases the lift-up of the first object to be processed W1 and holds the first object to be processed W1 in the first chuck mechanism 50. After holding the first object to be processed W1 before injection processing, the first holding device 40 drives the first vertical angle adjustment mechanism 54 to change the vertical rotation angle φb1 and holds the first object to be processed W1 in an orientation where the surface to be processed W1 is not aligned with the horizontal direction.

[0085] Figure 9 shows the transition from the second injection process to the second workpiece W2 to the first injection process to the first workpiece W1. In other words, it shows the transition from the second injection process to the second workpiece W2 to the first injection process to the first workpiece W1. In Figure 9, the first holding device 40 moves from the first transport position 80 towards the injection position 84, as indicated by arrow F3, and the second holding device 42 moves from the injection position 84 towards the second transport position 82, as indicated by arrow F4. As shown in Figure 9, by moving the first holding device 40 and the second holding device 42 simultaneously in the same direction, the time required to switch from the second injection process to the first injection process can be reduced.

[0086] In Figure 9, the first holding device 40 and the second holding device 42 can be moved so as to maintain a relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, the relative distance d can be kept constant by making the moving speeds of the first holding device 40 and the second holding device 42 the same. Alternatively, the first holding device 40 and the second holding device 42 can be moved so as to maintain the relative distance d within a predetermined range from an upper limit to a lower limit by adjusting their moving speeds. In this case, the moving speed of the first holding device 40 may be faster or slower than the moving speed of the second holding device 42. Preferably, the relative distance d is larger than the horizontal (x3 direction) size of the scan beam SB.

[0087] In Figure 9, the movement speed of the second holding device 42 that holds the second workpiece W2 at the end of the injection process may be the maximum speed that the second holding device 42 can achieve. By moving the second holding device 42 at the maximum speed, the time required from the completion of the second injection process to the second workpiece W2 to the removal of the second workpiece W2 can be shortened, thereby improving productivity. On the other hand, the movement speed of the first holding device 40 that holds the first workpiece W1 at the start of the injection process may be determined according to the injection conditions of the first workpiece W1. By moving the first holding device 40 at a movement speed corresponding to the injection conditions, the first injection process to the first workpiece W1 can be started at the same movement speed after the first workpiece W1 has moved to the injection position 84. This allows the start of the first injection process to be accelerated, thereby improving productivity.

[0088] Figure 10 is a flowchart showing the flow of an ion implantation method using an ion implantation apparatus 10. First, the first workpiece W1 to be treated before implantation is brought into the first holding device 40 (S10). In S10, the first workpiece W1 that has undergone implantation and has been held in the first holding device 40 may be removed, and then the first workpiece W1 to be treated before implantation may be brought into the first holding device 40. Next, the second holding device 42 is moved to the second transport position 82 (S12), and the first holding device 40 is moved to the first implantation position (for example, implantation position 84) (S14). S12 and S14 can be performed simultaneously, and the execution periods of S12 and S14 can be performed so as to overlap at least partially. Subsequently, the first holding device 40 is moved back and forth at the first implantation position, thereby irradiating the reciprocating first workpiece W1 with an ion beam (S16).

[0089] Before, during, or after the execution of S16, the second workpiece W2 before injection processing is loaded into the second holding device 42 (S18). In S18, the second workpiece W2 that has undergone injection processing and is held in the second holding device 42 may be loaded into the second holding device 42 before injection processing. Next, the first holding device 40 is moved to the first transport position 80 (S20), and the second holding device 42 is moved to the second injection position (for example, injection position 84) (S22). S20 and S22 can be executed simultaneously, and the execution periods of S20 and S22 can be executed so as to overlap at least partially. Subsequently, the second holding device 42 is moved back and forth at the second injection position, thereby irradiating the second workpiece W2 as it moves back and forth with an ion beam (S24).

[0090] The flow shown in Figure 10 can be executed repeatedly. For example, the process in S10 after repetition can be executed before, during, or after the execution of S24. Before, during, or after the execution of S24, the first workpiece W1 that has undergone injection processing held in the first holding device 40 can be unloaded, and the first workpiece W1 that has not undergone injection processing can be loaded into the first holding device 40. By repeating the flow shown in Figure 10, the first injection process into the first workpiece W1 held in the first holding device 40 and the second injection process into the second workpiece W2 held in the second holding device 42 can be executed alternately and repeatedly. The flow shown in Figure 10 can be executed repeatedly until the injection process for multiple workpieces to be processed continuously is completed.

[0091] Figure 11 is a top view showing a schematic configuration of an ion implantation system 100 according to an embodiment. As shown in Figure 11, the ion implantation system 100 comprises an ion implantation device 10, an atmospheric transport device 90, and four load ports (first load port 101, second load port 102, third load port 103, and fourth load port 104).

[0092] As described above, the ion implantation apparatus 10 includes an implantation chamber 14 in which a first holding device 40 and a second holding device 42 are arranged. The center of the implantation chamber 14 is irradiated with a scan beam SB generated by a beam generator (not shown).

[0093] The ion implantation apparatus 10 further comprises a first intermediate transport chamber 111, a second intermediate transport chamber 112, a first load lock chamber 121, a second load lock chamber 122, a third load lock chamber 123, and a fourth load lock chamber 124.

[0094] The first intermediate transport chamber 111 and the second intermediate transport chamber 112 are located adjacent to the injection processing chamber 14. The first intermediate transport chamber 111 is equipped with a first vacuum transport device 70, and the second intermediate transport chamber 112 is equipped with a second vacuum transport device 72. The first intermediate transport chamber 111 is located opposite the first holding device 40 and communicates with the injection processing chamber 14 via a first transport port 74. The second intermediate transport chamber 112 is located opposite the second holding device 42 and communicates with the injection processing chamber 14 via a second transport port 76.

[0095] The first load lock chamber 121 and the third load lock chamber 123 are located adjacent to the first intermediate transport chamber 111. The second load lock chamber 122 and the fourth load lock chamber 124 are located adjacent to the second intermediate transport chamber 112. The load lock chambers are vacuum chambers used to take in and take out materials to be processed without opening the injection processing chamber 14 to the atmosphere.

[0096] The first vacuum conveying device 70 in the first intermediate conveying chamber 111 conveys the workpiece between the first holding device 40 and the first load lock chamber 121 or the third load lock chamber 123 in a vacuum environment. The second vacuum conveying device 72 in the second intermediate conveying chamber 112 conveys the workpiece between the second holding device 42 and the second load lock chamber or the fourth load lock chamber in a vacuum environment.

[0097] Each of the four load ports can accommodate a cassette capable of holding multiple items to be processed. In Figure 11, the first cassette 105 is placed in the first load port 101, the second cassette 106 is placed in the second load port 102, the third cassette 107 is placed in the third load port 103, and the fourth cassette 108 is placed in the fourth load port 104.

[0098] The atmospheric conveying device 90 conveys the material to be processed between the cassette and the load lock chamber in an atmospheric environment. The atmospheric conveying device 90 includes a first atmospheric conveying device 91 positioned opposite the first load lock chamber 121 and the third load lock chamber 123, a second atmospheric conveying device 92 positioned opposite the second load lock chamber 122 and the fourth load lock chamber 124, a buffer support base 93 positioned between the first atmospheric conveying device 91 and the second atmospheric conveying device 92, a first aligner 94 positioned near the first atmospheric conveying device 91, and a second aligner 95 positioned near the second atmospheric conveying device 92.

[0099] The first atmospheric conveying device 91 includes, for example, a first atmospheric conveying robot (not shown) for conveying the material to be processed. The first atmospheric conveying device 91 has access to a first cassette 105 located at the first load port 101 and a second cassette 106 located at the second load port 102. The first atmospheric conveying device 91 also has access to a first load lock chamber 121 and a third load lock chamber 123. The first aligner 94 is a device for aligning the material to be processed when the material to be processed is conveyed by the first atmospheric conveying device 91.

[0100] The second atmospheric conveying device 92 includes, for example, a second atmospheric conveying robot (not shown) for conveying the material to be processed. The second atmospheric conveying device 92 has access to the third cassette 107 located in the third load port 103 and the fourth cassette 108 located in the fourth load port 104. The second atmospheric conveying device 92 also has access to the second load lock chamber 122 and the fourth load lock chamber 124. The second aligner 95 is a device for aligning the material to be processed when the material to be processed is conveyed by the second atmospheric conveying device 92.

[0101] The buffer support stand 93 is a stand for temporarily placing the object to be processed when transferring it between the first atmospheric conveying device 91 and the second atmospheric conveying device 92.

[0102] This section describes a case where 25 objects to be treated are contained in the first cassette 105 and 25 in the second cassette 106, for a total of 50 objects to be treated before implantation, and ion implantation is performed on these 50 objects. The 25 objects to be treated contained in the first cassette 105 will be referred to as objects W1 to W25, and the 25 objects to be treated contained in the second cassette 106 will be referred to as objects W26 to W50. Hereafter, as appropriate, 13 of the 25 objects to be treated contained in the first cassette 105, objects W1 to W13, will be referred to as "first objects," and 12 of the objects to be treated, objects W14 to W25, will be referred to as "second objects." Furthermore, of the 25 items to be processed contained in the second cassette 106, 12 items W39 to W50 are called "third items to be processed," and 13 items W26 to W38 are called "fourth items to be processed."

[0103] Figures 12 to 15 illustrate the ion implantation process for a total of 50 objects to be processed, contained in the first cassette 105 and the second cassette 106.

[0104] Refer to Figure 12. First, the first atmospheric conveying device 91 takes out 13 first workpieces W1 to W13 from the first cassette 105 and conveys them to the first load lock chamber 121. Alignment is performed by the first aligner 94 during conveyance. After the conveyance of the first workpieces W1 to W13, the first load lock chamber 121 is set to a vacuum environment. The first atmospheric conveying device 91 also takes out 12 second workpieces W14 to W25 from the first cassette 105 and transfers them to the second atmospheric conveying device 92 via the buffer support base 93. The second atmospheric conveying device 92 conveys 12 second workpieces W14 to W25 to the second load lock chamber 122. Alignment is performed by the second aligner 95 during conveyance. After the conveyance of the second workpieces W14 to W25, the second load lock chamber 122 is set to a vacuum environment.

[0105] Refer to Figure 13. Next, the first vacuum conveying device 70 conveys the first workpieces W1 to W13 between the first holding device 40 and the first load lock chamber 121 in a vacuum environment. The second vacuum conveying device 72 conveys the second workpieces W14 to W25 between the second holding device 42 and the second load lock chamber 122 in a vacuum environment.

[0106] The ion implantation process performed by the first holding device 40 and the second holding device 42 in the implantation chamber 14 is as described in the flowchart of Figure 10. Briefly, the first vacuum transport device 70 first loads one piece of material to be treated W1 into the first holding device 40 before the implantation process. The first holding device 40 moves back and forth within the implantation chamber 14, and the material to be treated W1 is irradiated with an ion beam. After the implantation process, the first vacuum transport device 70 loads the implanted material to be treated W1 into the first load lock chamber 121.

[0107] Before, during, or after the ion implantation treatment of the first workpiece W1 described above, the second vacuum transfer device 72 transports one piece of the second workpiece W14, before implantation, into the second holding device 42. After the implantation treatment of the first workpiece W1, the second holding device 42 moves back and forth within the implantation treatment chamber 14, and the second workpiece W14 is irradiated with an ion beam. After the implantation treatment, the second vacuum transfer device 72 transports the implanted second workpiece W14 to the second load lock chamber 122.

[0108] Subsequently, ion implantation treatment of the first and second objects is performed alternately in the order of first object W2, second object W15, first object W3, second object W16, ..., second object W25, first object W13, until the ion implantation treatment of the 13 first objects W1 to W13 in the first load lock chamber 121 and the 12 second objects W14 to W25 in the second load lock chamber 122 is completed.

[0109] Furthermore, as shown in Figure 13, during the ion implantation treatment of the first workpieces W1 to W13 housed in the first load lock chamber 121 and the second workpieces W14 to W25 housed in the second load lock chamber 122, the atmospheric transport device 90 transports the third workpieces W39 to W50 and the fourth workpieces W26 to W38 from the second cassette 106 to the third load lock chamber 123 and the fourth load lock chamber 124. More specifically, the first atmospheric transport device 91 takes out 12 third workpieces W39 to W50 from the second cassette 106 and transports them to the third load lock chamber 123. Alignment is performed by the first aligner 94 during transport. After the transport of the third workpieces W39 to W50, the third load lock chamber 123 is set to a vacuum environment. Furthermore, the first atmospheric conveying device 91 takes out 13 fourth workpieces W26 to W38 from the second cassette 106 and transfers them to the second atmospheric conveying device 92 via the buffer support stand 93. The second atmospheric conveying device 92 conveys the 13 fourth workpieces W26 to W38 to the fourth load lock chamber 124. Alignment is performed by the second aligner 95 during conveyance. After the conveyance of the fourth workpieces W26 to W38, the fourth load lock chamber 124 is made into a vacuum environment.

[0110] Refer to Figure 14. After the ion implantation of the first workpieces W1 to W13 housed in the first load lock chamber 121 and the second workpieces W14 to W25 housed in the second load lock chamber 122 is completed, the third workpieces W39 to W50 housed in the third load lock chamber 123 and the fourth workpieces W26 to W38 housed in the fourth load lock chamber 124 are alternately subjected to ion implantation in the implantation chamber 14. More specifically, after the ion implantation of the first workpiece W13 is completed using the first holding device 40, the ion implantation of the fourth workpiece W26 is performed using the second holding device 42. Subsequently, ion implantation treatment of the third and fourth objects is performed alternately in the following order: third object W39, fourth object W27, third object W40, fourth object W28, ..., third object W50, fourth object W38, until the ion implantation treatment of the 12 third objects W39 to W50 in the third load lock chamber 123 and the 13 fourth objects W26 to W38 in the second load lock chamber 122 is completed.

[0111] Furthermore, as shown in Figure 14, during the ion implantation of the third workpieces W39 to W50 housed in the third load lock chamber 123 and the fourth workpieces W26 to W38 housed in the fourth load lock chamber 124, the air transport device 90 transports the implanted first workpieces W1 to W13 housed in the first load lock chamber 121 and the implanted second workpieces W14 to W25 housed in the second load lock chamber 122 into the first cassette 105. More specifically, the first air transport device 91 takes out 13 implanted first workpieces W1 to W13 from the first load lock chamber 121 and transports them into the first cassette 105. The second air transport device 92 takes out 12 implanted second workpieces W14 to W25 from the second load lock chamber 122 and transfers them to the first air transport device 91 via the buffer support stand 93. The first atmospheric conveying device 91 transports 12 injection-treated second materials W14 to W25 into the first cassette 105.

[0112] Refer to Figure 15. After the ion implantation of the 12 third workpieces W39 to W50 housed in the third load lock chamber 123 and the 13 fourth workpieces W26 to W38 housed in the fourth load lock chamber 124 is completed, the air transport device 90 transports them into the second cassette 106. More specifically, the first air transport device 91 takes out the 12 implanted third workpieces W39 to W50 from the third load lock chamber 123 and transports them into the second cassette 106. The second air transport device 92 takes out the 13 implanted fourth workpieces W26 to W38 from the fourth load lock chamber 124 and transfers them to the first air transport device 91 via the buffer support stand 93. The first air transport device 91 transports the 13 implanted fourth workpieces W26 to W38 into the second cassette 106.

[0113] As described above, ion implantation can be performed on the 25 workpieces W1 to W25 housed in the first cassette 105 and the 25 workpieces W26 to W50 housed in the second cassette 106.

[0114] The ion implantation system 100 according to this embodiment includes a first load lock chamber 121 and a third load lock chamber 123 as load lock chambers for handling the workpiece held by the first holding device 40, and a second load lock chamber 122 and a fourth load lock chamber 124 as load lock chambers for handling the workpiece held by the second holding device 42. With this configuration, the productivity of the ion implantation process can be improved compared to a configuration in which one load lock chamber is provided for one holding device (hereinafter referred to as the comparative example).

[0115] In the comparative example, it is not possible to load a workpiece into the load lock chamber from another cassette before the ion implantation process is completed, until the workpiece that has already undergone the implantation process has been transported from the load lock chamber to one cassette. In the ion implantation system 100 according to this embodiment, the first holding device 40 is provided with a first load lock chamber 121 and a third load lock chamber 123, and the second holding device 42 is provided with a second load lock chamber 122 and a fourth load lock chamber 124. As a result, between the ion implantation of the first workpieces W1 to W13 housed in the first load lock chamber 121 and the second workpieces W14 to W25 housed in the second load lock chamber 122, the third workpieces W39 to W50 housed in the second cassette 106 can be transported to the third load lock chamber 123, and the fourth workpieces W26 to W38 housed in the second cassette 106 can be transported to the fourth load lock chamber 124. As soon as the ion implantation process for the 25 workpieces W1 to W25 in the first cassette 105 is completed, the ion implantation process for the 25 workpieces W26 to W50 in the second cassette 106 can be started, thereby improving the productivity of the ion implantation process.

[0116] Furthermore, according to the ion implantation system 100 of this embodiment, while the workpiece to be treated in the other load lock chamber is being ion-implanted, the workpiece that has already been implanted in one load lock chamber can be transported to a cassette. As a result, the transport of workpieces W1 to W25 in the first cassette by the air transport device 90 and the transport of workpieces W26 to W50 in the second cassette do not overlap in time, thus improving the productivity of the ion implantation process.

[0117] Immediately after the completion of processing of the material to be processed in the first cassette 105, that is, after the completion of the delivery of the material that has been injected, processing of the material to be processed in the third cassette 107 and the fourth cassette 108 may be started in the same way as processing of the material to be processed in the first cassette 105 and the second cassette 106.

[0118] The transport of the 13 first processed objects W1 to W13, the 12 second processed objects W14 to W25, the 12 third processed objects W39 to W50, and the 13 fourth processed objects W26 to W38 by the atmospheric transport device 90 may be carried out simultaneously or in multiple stages. If carried out in multiple stages, the objects may be transported in groups such as 6 + 6, 6 + 7, 4 + 4 + 4, or 4 + 4 + 5.

[0119] Figure 16 is a flowchart illustrating the flow of an ion implantation method using the ion implantation system 100. Here, 25 pieces of material to be treated are contained in the first cassette 105 and 2 cassette 106, for a total of 50 pieces, and the case in which ion implantation is performed on these 50 pieces of material will be described. In another embodiment, ion implantation may be performed on at least some of the multiple pieces of material to be treated contained in the first cassette 105 and 2 cassette 106.

[0120] S30 to S38 are processing steps for the materials to be processed in the first cassette 105. First, thirteen first materials W1 to W13 are transported from the first cassette 105 to the first load lock chamber 121 (S30). Next, twelve second materials W14 to W25 are transported from the first cassette 105 to the second load lock chamber 122 (S32).

[0121] Next, the first objects to be processed W1 to W13, housed in the first load lock chamber 121, and the second objects to be processed W14 to W25, housed in the second load lock chamber 122, are alternately subjected to ion implantation in the implantation chamber 14 (S34). Here, the ion implantation may be performed in the manner shown in the flowchart of Figure 10.

[0122] After the ion implantation process is completed in S34, the first processed materials W1 to W13, which have been implanted and housed in the first load lock chamber 121, are transferred to the first cassette 105 (S36). Next, the second processed materials W14 to W25, which have been implanted and housed in the second load lock chamber 122, are transferred to the first cassette 105 (S38). This completes the processing of the materials in the first cassette 105.

[0123] Steps S40 to S48 are processing steps for the materials to be processed in the second cassette 106. First, twelve third materials W39 to W50 are transported from the second cassette 106 to the third load lock chamber 123 (S40). Next, thirteen fourth materials W26 to W38 are transported from the second cassette 106 to the fourth load lock chamber 124 (S42). Steps S40 and S42 are performed during step S34.

[0124] After the completion of S34, the third workpieces W39 to W50 housed in the third load lock chamber 123 and the fourth workpieces W26 to W38 housed in the fourth load lock chamber 124 are alternately subjected to ion implantation in the implantation chamber 14 (S44). Here too, the ion implantation may be performed in the manner shown in the flowchart of Figure 10.

[0125] After the ion implantation process is completed in S44, the implanted third workpieces W39 to W50, which are housed in the third load lock chamber 123, are transferred to the second cassette 106 (S46). Next, the implanted fourth workpieces W26 to W38, which are housed in the fourth load lock chamber 124, are transferred to the second cassette 106 (S48). This completes the processing of the workpieces in the second cassette 106.

[0126] In steps S30 to S48 described above, the ion implantation treatment method for the 25 workpieces W1 to W25 in the first cassette 105 and the 25 workpieces W26 to W50 in the second cassette 106 is completed. According to the ion implantation treatment method of this embodiment, between the ion implantation treatment of the first workpieces W1 to W13 housed in the first load lock chamber 121 and the second workpieces W14 to W25 housed in the second load lock chamber 122, the third workpieces W39 to W50 housed in the second cassette 106 are moved into the third load lock chamber 123, and the fourth workpieces W26 to W38 housed in the second cassette 106 are moved into the fourth load lock chamber 124. As a result, as soon as the ion implantation process for the 25 workpieces W1 to W25 in the first cassette 105 is completed, the ion implantation process for the 25 workpieces W26 to W50 in the second cassette 106 can be started, thereby improving the productivity of the ion implantation process.

[0127] Furthermore, according to the ion implantation method of this embodiment, between the ion implantation of the third workpieces W39 to W50 housed in the third load lock chamber 123 and the fourth workpieces W26 to W38 housed in the fourth load lock chamber 124, the implanted first workpieces W1 to W13 housed in the first load lock chamber 121 and the implanted second workpieces W14 to W25 housed in the second load lock chamber 122 are transported into the first cassette 105. Since the transport of workpieces W1 to W25 in the first cassette by the air transport device 90 and the transport of workpieces W26 to W50 in the second cassette do not overlap in time, the productivity of the ion implantation process can be improved.

[0128] One aspect of the present disclosure is as follows: (1) an implantation chamber in which a first holding device and a second holding device are arranged, wherein ion implantation is performed alternately on a first or third workpiece held in the first holding device and a second or fourth workpiece held in the second holding device in a vacuum environment; a first load lock chamber for handling the first workpiece held in the first holding device and a third load lock chamber for handling the third workpiece held in the first holding device; a second load lock chamber for handling the second workpiece held in the second holding device and a fourth load lock chamber for handling the fourth workpiece held in the second holding device; a first vacuum conveying device for conveying the first or third workpiece between the first holding device and the first load lock chamber or the third load lock chamber in a vacuum environment; a second vacuum conveying device for conveying the second or fourth workpiece between the second holding device and the second load lock chamber or the fourth load lock chamber in a vacuum environment. An ion implantation system comprising: a first cassette for containing the first and second objects to be processed in an atmospheric environment; a second cassette for containing the third and fourth objects to be processed; and an atmospheric transport device for transporting the first or third object to be processed between the first cassette and the first load lock chamber or the third load lock chamber in an atmospheric environment, and transporting the second or fourth object to be processed between the second cassette and the second load lock chamber or the fourth load lock chamber.(Item 2) The ion implantation system according to Item 1, characterized in that the first cassette contains a plurality of first objects to be processed and a plurality of second objects to be processed, the second cassette contains a plurality of third objects to be processed and a plurality of fourth objects to be processed, the air transport device transports at least a portion of the plurality of first objects to be processed from the first cassette to the first load lock chamber, the air transport device transports at least a portion of the plurality of second objects to be processed from the first cassette to the second load lock chamber, the air transport device transports at least a portion of the plurality of third objects to be processed from the second cassette to the third load lock chamber, and the air transport device transports at least a portion of the plurality of fourth objects to be processed from the second cassette to the fourth load lock chamber. (Item 3) The ion implantation system according to Item 2, characterized in that the first objects to be processed contained in the first load lock chamber and the second objects to be processed contained in the second load lock chamber are alternately subjected to ion implantation in the implantation chamber. (Clause 4) The ion implantation system according to Clause 3, characterized in that, between the ion implantation of the first workpiece housed in the first load lock chamber and the second workpiece housed in the second load lock chamber, the atmospheric transport device transports the third workpiece and the fourth workpiece from the second cassette to the third load lock chamber and the fourth load lock chamber. (Clause 5) The ion implantation system according to Clause 3 or 4, characterized in that, after the completion of the ion implantation of the first workpiece housed in the first load lock chamber and the second workpiece housed in the second load lock chamber, the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber are alternately subjected to ion implantation in the implantation chamber. (Clause 6) The ion implantation system according to Clause 5, characterized in that, between the ion implantation of the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber, the air transport device transports the implanted first workpiece housed in the first load lock chamber and the implanted second workpiece housed in the second load lock chamber into the first cassette.(Item 7) An ion implantation method characterized by comprising: the steps of: transporting at least a portion of a plurality of first objects to be processed contained in a first cassette to a first load lock chamber and transporting at least a portion of a plurality of second objects to be processed contained in the first cassette to a second load lock chamber; alternately ion implanting the first objects to be processed contained in the first load lock chamber and the second objects to be processed contained in the second load lock chamber; and, between the ion implantation of the first objects to be processed contained in the first load lock chamber and the second objects to be processed contained in the second load lock chamber, transporting at least a portion of a plurality of third objects to be processed contained in a second cassette to a third load lock chamber and transporting at least a portion of a plurality of fourth objects to be processed contained in the second cassette to a fourth load lock chamber. (Clause 8) The ion implantation method according to Clause 7, further comprising the step of alternately ion implanting the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber after the completion of ion implantation of the first workpiece housed in the first load lock chamber and the second workpiece housed in the second load lock chamber. (Clause 9) The ion implantation method according to Clause 8, further comprising the step of loading the implanted first workpiece housed in the first load lock chamber and the implanted second workpiece housed in the second load lock chamber into the first cassette between the ion implantation of the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber.

[0129] Although the present disclosure has been described above with reference to the embodiments described above, the present disclosure is not limited to the embodiments described above, and the configurations of each embodiment may be combined or substituted as appropriate. Furthermore, based on the knowledge of those skilled in the art, it is possible to appropriately rearrange the combinations and processing order in each embodiment, or to make modifications such as various design changes to the embodiments, and embodiments to which such rearrangements and modifications have been made may also be included in the scope of the ion implantation system and ion implantation method according to the present disclosure.

[0130] Embodiments relating to this disclosure may take the form of a computer program comprising one or more computer-readable sequences describing the method relating to this disclosure, or may take the form of a non-temporary, tangible recording medium (e.g., non-volatile memory, magnetic tape, magnetic disk, or optical disk) on which such a computer program is stored. A processor may implement the method relating to this disclosure by executing such a computer program.

[0131] This disclosure can be used in the manufacture of semiconductor devices.

[0132] 10 Ion implanter, 12 Beam generator, 14 Implantation chamber, 16 Vacuum transport device, 18 Control device, 20 Ion source, 22 Extraction unit, 23 Magnetic shield, 24 Mass spectrometry unit, 26 Beam shaping unit, 28 Beam scanning unit, 30 Beam parallelization unit, 32 Acceleration / deceleration unit, 34 Energy analysis unit, 36 Plasma shower device, 38 Beam stopper, 40 First holding device, 42 Second holding device, 58 First reciprocating motion mechanism, 68 Second reciprocating motion mechanism, 70 First vacuum transport device, 72 Second vacuum transport device, 74 First transport port, 76 Second transport port, 90 Atmospheric transport device, 91 First atmospheric transport device, 92 Second atmospheric transport device, 93 Buffer support base, 94 First aligner, 95 Second aligner, 100 Ion implantation system, 105 First cassette, 106 Second cassette, 107 Third cassette, 108 Fourth cassette, 111 First intermediate transport chamber, 112 Second intermediate transport chamber, 121 First load lock chamber, 122 Second load lock chamber, 123 Third load lock chamber, 124 Fourth load lock chamber.

Claims

1. An implantation chamber in which a first holding device and a second holding device are arranged, wherein an implantation chamber is capable of alternately performing ion implantation on a first or third workpiece held by the first holding device and a second or fourth workpiece held by the second holding device in a vacuum environment; a first load lock chamber for handling the first workpiece held by the first holding device and a third load lock chamber for handling the third workpiece held by the first holding device; a second load lock chamber for handling the second workpiece held by the second holding device and a fourth load lock chamber for handling the fourth workpiece held by the second holding device; a first vacuum conveying device for conveying the first or third workpiece between the first holding device and the first load lock chamber or the third load lock chamber in a vacuum environment; a second vacuum conveying device for conveying the second or fourth workpiece between the second holding device and the second load lock chamber or the fourth load lock chamber in a vacuum environment. An ion implantation system comprising: a first cassette for containing the first and second objects to be processed in an atmospheric environment; a second cassette for containing the third and fourth objects to be processed; and an atmospheric transport device for transporting the first or third object to be processed between the first cassette and the first load lock chamber or the third load lock chamber in an atmospheric environment, and transporting the second or fourth object to be processed between the second cassette and the second load lock chamber or the fourth load lock chamber.

2. The ion implantation system according to claim 1, characterized in that the first cassette contains a plurality of first objects to be processed and a plurality of second objects to be processed, the second cassette contains a plurality of third objects to be processed and a plurality of fourth objects to be processed, the air transport device transports at least a portion of the plurality of first objects to be processed from the first cassette to the first load lock chamber, the air transport device transports at least a portion of the plurality of second objects to be processed from the first cassette to the second load lock chamber, the air transport device transports at least a portion of the plurality of third objects to be processed from the second cassette to the third load lock chamber, and the air transport device transports at least a portion of the plurality of fourth objects to be processed from the second cassette to the fourth load lock chamber.

3. The ion implantation system according to claim 2, characterized in that the first object to be treated, housed in the first load lock chamber, and the second object to be treated, housed in the second load lock chamber, are alternately subjected to ion implantation in the implantation chamber.

4. The ion implantation system according to claim 3, characterized in that, between the ion implantation of the first workpiece housed in the first load lock chamber and the second workpiece housed in the second load lock chamber, the atmospheric transport device transports the third workpiece and the fourth workpiece from the second cassette to the third load lock chamber and the fourth load lock chamber, respectively.

5. The ion implantation system according to claim 3 or 4, characterized in that, after the completion of ion implantation of the first workpiece housed in the first load lock chamber and the second workpiece housed in the second load lock chamber, the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber are alternately subjected to ion implantation in the implantation chamber.

6. The ion implantation system according to claim 5, characterized in that, between the ion implantation of the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber, the air transport device transports the implanted first workpiece housed in the first load lock chamber and the implanted second workpiece housed in the second load lock chamber into the first cassette.

7. An ion implantation method characterized by comprising the steps of: transporting at least a portion of a plurality of first objects to be processed contained in a first cassette to a first load lock chamber, and transporting at least a portion of a plurality of second objects to be processed contained in the first cassette to a second load lock chamber; alternately ion implanting the first objects to be processed contained in the first load lock chamber and the second objects to be processed contained in the second load lock chamber; and, between the ion implantation of the first objects to be processed contained in the first load lock chamber and the second objects to be processed contained in the second load lock chamber, transporting at least a portion of a plurality of third objects to be processed contained in a second cassette to a third load lock chamber, and transporting at least a portion of a plurality of fourth objects to be processed contained in the second cassette to a fourth load lock chamber.

8. The ion implantation method according to claim 7, further comprising the step of alternately performing ion implantation on the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber after the completion of ion implantation on the first workpiece housed in the first load lock chamber and the second workpiece housed in the second load lock chamber.

9. The ion implantation method according to claim 8, further comprising the step of transporting the implanted first workpiece housed in the first load lock chamber and the implanted second workpiece housed in the second load lock chamber into the first cassette between the ion implantation of the third workpiece housed in the third load lock chamber and the fourth workpiece housed in the fourth load lock chamber.

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