Bonding device, bonding method, and bonding system

Abstract

This bonding device bonds a die, which has a bonding surface and a non-bonding surface opposite to the bonding surface, and a target substrate by orienting the bonding surface of the die toward a bonding surface of the target substrate. The bonding device comprises: a substrate stage that holds the target substrate; a first suction head that sucks a part of the non-bonding surface of the die; a first movement mechanism that moves the die together with the first suction head and presses the die against the target substrate; a pressing head that presses another part of the non-bonding surface of the die; and a second movement mechanism that moves the pressing head independently of the first suction head and presses the die against the target substrate.

Description

Bonding Device, Bonding Method, and Bonding System

[0001] The present disclosure relates to a bonding device, a bonding method, and a bonding system.

[0002] The chip mounting system described in Patent Document 1 includes a chip supply device, a bonding device, a surface treatment device, a loading / unloading unit, and a transfer unit (paragraph

[0225] of Patent Document 1). The chip supply device supplies a plurality of chips individually. The chips are adhered to a tape that covers the openings of the frame, pushed up one by one upward, and turned upside down one by one (paragraph

[0251] of Patent Document 1). The bonding device attaches the chips supplied from the chip supply device onto a substrate.

[0003] Japanese Patent No. 6337400

[0004] One embodiment of the present disclosure provides a technique for improving the bonding quality of a die to a target substrate.

[0005] The bonding device according to one embodiment of the present disclosure bonds the die and the target substrate by facing the bonding surface of the die, which has a bonding surface and a non-bonding surface opposite to the bonding surface, toward the bonding surface of the target substrate. The bonding device includes a substrate stage that holds the target substrate, a first suction head that sucks a part of the non-bonding surface of the die, a first moving mechanism that moves the die together with the first suction head and presses the die against the target substrate, a pressing head that presses another part of the non-bonding surface of the die, and a second moving mechanism that moves the pressing head independently of the first suction head and presses the die against the target substrate.

[0006] According to one embodiment of the present disclosure, the bonding quality of the die to the target substrate can be improved.

[0007] Figure 1 is a cross-sectional view showing a bonding apparatus according to one embodiment. Figure 2 is a cross-sectional view showing an example of a target substrate before bonding the die. Figure 3 is a cross-sectional view showing an example of a target substrate after bonding the die. Figure 4 is a cross-sectional view showing an example of the operation of the first suction head and the pressing head. Figure 5 is a cross-sectional view along the line V-V in Figure 4. Figure 6(A) is a diagram showing a first modified example of the first suction head and the pressing head, and Figure 6(B) is a cross-sectional view along the line B-B in Figure 6(A). Figure 7 is a cross-sectional view showing an example of the operation of the first suction head and the pressing head shown in Figure 6. Figure 8(A) is a diagram showing a second modified example of the first suction head and the pressing head, and Figure 8(B) is a cross-sectional view along the line B-B in Figure 8(A). Figure 9(A) is a diagram showing a third modified example of the first suction head and the pressing head, and Figure 9(B) is a cross-sectional view along the line B-B in Figure 9(A). Figure 10 is a cross-sectional view showing the operation of a bonding apparatus according to a modified example. Figure 11 is a cross-sectional view showing the operation of the bonding device following Figure 10. Figure 12 is a cross-sectional view showing an example of a carrier before picking up the die. Figure 13 is a cross-sectional view showing a modified pressing device. Figure 14 is a cross-sectional view showing a fourth modified example of the first suction head and the pressing head. Figure 15 is a cross-sectional view showing a modified mounting device, and is a cross-sectional view showing an example of the operation of the first suction head. Figure 16 is a cross-sectional view showing an example of the operation of the pressing head following Figure 15. Figure 17 is a plan view showing an example of a bonding system. Figure 18 is a cross-sectional view showing an example of a second pressing device. Figure 19 is a cross-sectional view showing a modified example of the second pressing device.

[0008] Embodiments of this disclosure will be described below with reference to the drawings. In each drawing, identical or similar components are denoted by the same reference numerals, and their descriptions may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical.

[0009] The X-axis direction includes the positive X-axis direction and the negative X-axis direction, which is the opposite direction to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction, which is the opposite direction to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction, which is the opposite direction to the positive Z-axis direction. The positive Z-axis direction is upward, and the negative Z-axis direction is downward.

[0010] Referring to Figures 1 to 3, a bonding apparatus 1 according to one embodiment will be described. The bonding apparatus 1 bonds the die D and the target substrate W with the bonding surface Da of the die D facing the bonding surface Wa of the target substrate W. For example, the bonding apparatus 1 repeatedly bonds the die D and the target substrate W, bonding multiple dies D to the target substrate W one by one in sequence.

[0011] As shown in Figure 2, the target substrate W has a semiconductor substrate W1 such as a silicon wafer and a plurality of devices W2 formed on the semiconductor substrate W1. In this embodiment, the semiconductor substrate W1 is a silicon wafer, but it may be a compound semiconductor wafer. A glass substrate may be used instead of the semiconductor substrate W1. The target substrate W has a bonding surface Wa and a non-bonding surface facing the opposite direction from the bonding surface Wa. The bonding surface Wa and non-bonding surface of the target substrate W are circular, but may be square. The target substrate W has a plurality of devices W2 on the bonding surface Wa. The plurality of devices W2 are separated by a plurality of streets that are orthogonal to each other. Each device W2 includes an electronic circuit. As shown in Figure 3, a die D is electrically connected to each device W2. Then, the target substrate W is cut along the streets to separate each device W2 into individual pieces to obtain a semiconductor device. The semiconductor device includes the devices W2 and the die D.

[0012] Die D is a semiconductor substrate on which multiple devices, separate from device W2, are formed, and each device is separated into individual pieces. A glass substrate may be used instead of a semiconductor substrate. As shown in Figure 1, die D has a bonding surface Da and a non-bonding surface Db facing the opposite direction from bonding surface Da. The non-bonding surface Db of die D does not need to be a surface that is not bonded to the target substrate W, and may be bonded to another die (not shown). Die D has a device on bonding surface Da. The electronic circuit of the device on die D and the electronic circuit of device W2 on the target substrate W are electrically connected. The type and number of dies D electrically connected to a single device W2 are not particularly limited. Although not shown, multiple dies D may be electrically connected to a single device W2.

[0013] As shown in Figure 1, the bonding apparatus 1 includes a substrate stage 10. The substrate stage 10 holds the target substrate W. For example, the substrate stage 10 holds the target substrate W from below with the bonding surface Wa of the target substrate W facing upwards. The substrate stage 10 is, for example, a vacuum suction chuck. The substrate stage 10 may also have an inverted structure and hold the target substrate W from above. Alternatively, the substrate stage 10 may have a vertically oriented structure and hold the target substrate W in a vertically oriented position.

[0014] The bonding apparatus 1 includes a mounting apparatus 20. The mounting apparatus 20 mounts the die D onto the target substrate W held by the substrate stage 10. The mounting apparatus 20 may have a structure corresponding to the structure of the substrate stage 10. The mounting apparatus 20 may have an inverted structure. The mounting apparatus 20 may also have a vertically oriented structure.

[0015] The mounting device 20 has a first suction head 21. The first suction head 21 adsorbs the die D. The first suction head 21 adsorbs the non-joint surface Db of the die D. Since it is not a problem if the non-joint surface Db is dirty, the first suction head 21 may come into contact with the die D. This can improve the suction force and suppress misalignment. The first suction head 21 adsorbs the die D, for example, by vacuum adsorption.

[0016] The mounting device 20 has a first moving mechanism 29. The first moving mechanism 29 moves the die D together with the first suction head 21 and presses the die D against the target substrate W. The first moving mechanism 29 joins the die D to the target substrate W by moving the first suction head 21 in the Z-axis direction. To improve the accuracy of the joining position, the first moving mechanism 29 may move the first suction head 21 in the X-axis and Y-axis directions, or rotate the first suction head 21 around the vertical axis. The amount of movement or rotation required to improve the accuracy of the joining position is small, and when viewed from above, the first suction head 21 hardly moves at all. The first moving mechanism 29 has, for example, a motor for each direction of movement.

[0017] The bonding device 1 may include a third moving mechanism 19. The third moving mechanism 19 moves the substrate stage 10. The third moving mechanism 19 moves the substrate stage 10 in the X-axis and Y-axis directions to change the bonding position of the die D on the target substrate W. If the mounting device 20 does not move in the X-axis and Y-axis directions, the operation of the mounting device 20 can be simplified. The third moving mechanism 19 may also move the substrate stage 10 in the Z-axis direction. The third moving mechanism 19 may have, for example, a motor for each direction of movement.

[0018] The bonding apparatus 1 may include at least one of a first imaging device 81, a second imaging device 82, and a third imaging device 83 in order to improve the accuracy of the bonding position of the die D to the target substrate W. The first imaging device 81, the second imaging device 82, and the third imaging device 83 do not need to capture an image each time the die D and the target substrate W are bonded, but may capture an image periodically.

[0019] The first imaging device 81 images the alignment marks on the bonding surface Da of the die D held by the first suction head 21. The number of alignment marks to be imaged is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuit of the die D.

[0020] The first imaging device 81 is positioned, for example, below the first suction head 21. The first imaging device 81 transmits the captured image to the control circuit 90. The control circuit 90 processes the image captured by the first imaging device 81 to detect the position of the die D in the first coordinate system set for the first suction head 21.

[0021] The second imaging device 82 images the alignment marks on the bonding surface Wa of the target substrate W held by the substrate stage 10. The number of alignment marks to be imaged is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuit of the device W2 on the target substrate W.

[0022] The second imaging device 82 is positioned, for example, above the substrate stage 10 and is provided, for example, on the first suction head 21. The second imaging device 82 transmits the captured image to the control circuit 90. The control circuit 90 processes the image captured by the second imaging device 82 to detect the position of the device W2 in a second coordinate system set on the substrate stage 10.

[0023] The control circuit 90 uses images captured by at least one of the first imaging device 81 and the second imaging device 82 to align the die D held by the first suction head 21 with the device W2 on the target substrate W held by the substrate stage 10. This alignment is performed by controlling at least one of the first moving mechanism 29 and the third moving mechanism 19. The position of the die D or the device W2 can be corrected before bonding the die D and the target substrate W, thereby improving the accuracy of the bonding position.

[0024] The third imaging device 83 simultaneously images both the alignment mark on the bonding surface Da of the die D and the alignment mark on the bonding surface Wa of the target substrate W after the die D and the device W2 have been bonded. The third imaging device 83, for example, transmits images through the die D to image the alignment marks of the die D and the target substrate W. The third imaging device 83 is composed of, for example, an infrared camera.

[0025] The third imaging device 83, when imaging the alignment marks between the die D and the target substrate W by passing through the die D, is positioned, for example, above the substrate stage 10 and is provided, for example, on the first suction head 21. The third imaging device 83 transmits the captured image to the control circuit 90. The control circuit 90 detects the difference between the actual bonding position and the target bonding position by processing the image captured by the third imaging device 83.

[0026] The control circuit 90 uses the image captured by the third imaging device 83 to align the die D, held by the first suction head 21, with the target substrate W, held by the substrate stage 10, during subsequent bonding operations between the die D and the target substrate W. The position of the die D or target substrate W can be corrected considering the characteristics of the bonding device 1, thereby improving the accuracy of the bonding position.

[0027] The bonding device 1 includes a control circuit 90. The control circuit 90 is, for example, a computer. The control circuit 90 includes, for example, an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as memory. The storage unit 92 stores programs that control various processes executed in the bonding device 1. The control circuit 90 controls the operation of the bonding device 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. A lower-level control circuit is provided for each device that constitutes the bonding device 1 to control the operation of the device, and a higher-level control circuit may be provided to comprehensively control multiple lower-level control circuits. The control circuit 90 may be composed of multiple lower-level control circuits and a higher-level control circuit.

[0028] The control circuit 90 includes electronic circuits such as a CPU, GPU (Graphics Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control circuit 90 performs various control operations described in this specification by executing instruction codes stored in a storage medium such as memory, or by being circuit-designed for special applications.

[0029] The bonding device 1 comprises a housing 31. The housing 31 houses the substrate stage 10 and the mounting device 20 inside. The housing 31 has an input / output 32 on its side wall. The input / output 32 is used to load and unload the target substrate W. As shown in Figure 10, the housing 31 may also house a carrier stage 50 and a pickup device 60, which will be described later. The input / output 32 may also be used to load and unload a carrier E, which will be described later.

[0030] An example of a first suction head 21 and a pressing head 41 will be described with reference to Figures 4 and 5. The bonding device 1 includes a first suction head 21 and a first moving mechanism 29, as well as a pressing head 41 and a second moving mechanism 49. The first suction head 21 has a first suction surface 22 that adsorbs the die D. The first suction surface 22 is smaller than the non-bonding surface Db of the die D and adsorbs a portion of the non-bonding surface Db of the die D. The pressing head 41 presses another portion of the non-bonding surface Db of the die D. The second moving mechanism 49 moves the pressing head 41 independently of the first suction head 21 and presses the die D against the target substrate W. The second moving mechanism 49 has, for example, a drive shaft. The drive shaft has, for example, an actuator such as a motor or a cylinder.

[0031] The first suction head 21 and the pressing head 41 press on different parts of the non-bonding surface Db of the die D. The pressure applied to press the die D against the target substrate W can be adjusted for each part of the non-bonding surface Db of the die D. Appropriate pressure can be applied to each part of the non-bonding surface Db of the die D, thereby crushing any air bubbles that may form at the interface between the die D and the target substrate W. Therefore, the bonding quality of the die D to the target substrate W can be improved. As will be described in more detail later, it is also possible to adjust the timing of pressing the die D against the target substrate W for each part of the non-bonding surface Db of the die D.

[0032] Preferably, the first suction head 21 presses at least the center of the non-joint surface Db of the die D, and the pressing head 41 presses the peripheral edge of the non-joint surface Db of the die D. In other words, it is preferable that the pressing head 41 is positioned outside the first suction head 21. The pressing head 41 is provided as a single unit in the shape of a rectangular frame, for example, as shown in Figure 5. As will be described in more detail later, the number and shape of the pressing heads 41 are not particularly limited.

[0033] Generally, it is more difficult to apply pressure to the periphery of the joining surface Da compared to the center of the joining surface Da. This is because the periphery of the joining surface Da is open to the outside, unlike the center of the joining surface Da. Therefore, air bubbles tend to get trapped at the periphery of the joining surface Da. This tendency is particularly pronounced when there is no pressing head 41 and, as will be described in more detail later, the first suction surface 22 has a protruding portion 23 and an inclined portion 24, as shown in Figure 6(B).

[0034] According to this embodiment, separately from the first suction head 21, the pressing head 41 presses the periphery of the non-joining surface Db of the die D and the periphery of the joining surface Wa. This crushes any air bubbles that may form on the periphery of the joining surface Da. This effect is particularly noticeable when the first suction surface 22 has a protruding portion 23 and an inclined portion 24, which will be described later. The pressure at which the pressing head 41 presses the periphery of the non-joining surface Db is not particularly limited, but it is preferably higher than the pressure at which the first suction head 21 presses the center of the non-joining surface Db.

[0035] Preferably, the control circuit 90 controls the first moving mechanism 29 to press the die D against the target substrate W using the first suction head 21, and then controls the second moving mechanism 49 to press the die D against the target substrate W using the pressing head 41, in this order. This allows air bubbles to be pushed out from the center to the periphery of the bonding surface Da of the die D, thereby suppressing air bubble entrapment.

[0036] The first suction head 21 holds the joint surface Da of the die D facing downwards, as shown in Figure 4, but it may also hold the joint surface Da of the die D facing upwards, as shown in Figure 14. In the latter case, the peripheral edge of the joint surface Da sags downwards due to gravity compared to the center of the joint surface Da. Therefore, a wedge-shaped gap can be formed that opens from the center of the joint surface Wa towards the periphery. Thus, it is easy to push air bubbles out from the center of the joint surface Da towards the periphery.

[0037] The following describes an example of the operation of the first suction head 21 and the pressing head 41, referring again to Figure 4. First, the first moving mechanism 29 moves the die D together with the first suction head 21 and presses the die D against the target substrate W. The first moving mechanism 29 also moves the pressing head 41 together with the first suction head 21. During this time, the pressing head 41 does not come into contact with the die D and does not press the die D against the target substrate W.

[0038] When the first moving mechanism 29 moves the pressing head 41 together with the first suction head 21, the second moving mechanism 49 moves the pressing head 41 relative to the first suction head 21. The second moving mechanism 49 moves the pressing head 41, for example, in the Z-axis direction. The second moving mechanism 49 has, for example, a drive shaft. The drive shaft has, for example, an actuator such as a motor or a cylinder. In this embodiment, the first moving mechanism 29 moves the pressing head 41 together with the first suction head 21, but it may also move the first suction head 21 without moving the pressing head 41.

[0039] Next, the second moving mechanism 49 moves the pressing head 41, and the pressing head 41 presses the die D against the target substrate W. At this time, it is preferable that the first suction head 21 is holding the die D in place and pressing it against the target substrate W so that the die D does not shift position.

[0040] However, when the pressing head 41 presses the die D against the target substrate W, the center of the bonding surface Da of the die D is already bonded. Therefore, when the pressing head 41 presses the die D against the target substrate W, the first suction head 21 may (A) release the suction of the die D and remain in contact with the die D, or (B) release the suction of the die D and be separated from the die D.

[0041] Although not shown in the diagram, finally, the first moving mechanism 29 moves the pressing head 41 together with the first suction head 21, separating the first suction head 21 and the pressing head 41 from the die D simultaneously. Alternatively, the second moving mechanism 49 may move the pressing head 41 before the first moving mechanism 29 moves the pressing head 41 together with the first suction head 21, separating the pressing head 41 from the die D before the first suction head 21.

[0042] Referring to FIGS. 6 and 7, a first modification example of the first suction head 21 and the pressing head 41 will be described. Hereinafter, the differences will be mainly described. The first suction head 21 has a first suction surface 22. The first suction surface 22 is a surface (for example, the lower surface) facing the substrate stage 10, and has a protruding portion 23 and an inclined portion 24. The protruding portion 23 protrudes most toward the substrate stage 10 (for example, downward). The inclined portion 24 is spaced apart from the substrate stage 10 as it moves away from the protruding portion 23. For example, the inclined portion 24 inclines upward (in the positive Z-axis direction) as it moves away from the protruding portion 23 in the horizontal direction (for example, the positive X-axis direction and the negative X-axis direction).

[0043] As shown in FIG. 7, the protruding portion 23 starts pressing the die D against the target substrate W, and the bonding of the die D and the target substrate W starts. At the start of bonding, a wedge-shaped gap G is formed between the die D and the target substrate W. The wedge-shaped gap G is formed along the inclined portion 24. For example, the wedge-shaped gap G expands in the vertical direction as it moves away from the protruding portion 23 in the horizontal direction (for example, the positive X-axis direction and the negative X-axis direction).

[0044] Hereinafter, the region where the die D and the target substrate W are bonded will be referred to as the bonding region. In the bonding region, a bonding force acts between the die D and the target substrate W. The bonding force is generated, for example, by hydrogen bonding between OH groups. The OH groups are formed, for example, by activating and hydrophilizing the bonding surfaces Da and Wa before bonding. The activation includes irradiation with plasma, and the hydrophilization includes supply of water or water vapor. Note that the bonding force may include van der Waals force. The bonding method of the die D and the target substrate W is surface activated bonding (SAB: Surface Activated Bonding) in this embodiment, but may also be atomic diffusion bonding (ADB: Atomic Diffusion Bonding).

[0045] In the bonding region, a bonding force is generated, and the wedge-shaped gap G is gradually closed by the bonding force, and the bonding region gradually expands. When the bonding region expands to the entire bonding surface Da of the die D, the bonding is completed. If the bonding region is gradually expanded after pressing only a part of the bonding surface Da of the die D against the target substrate W, the entrainment of bubbles can be suppressed and the bonding quality can be improved.

[0046] Incidentally, the number of the inclined portions 24 is two in this embodiment as will be described later, but it may be one or three or more. For example, a quadrangular pyramid surface may be formed by four inclined portions 24, and the protruding portion 23 may be formed at the apex of the quadrangular pyramid surface. Alternatively, an inclined surface may be formed by one inclined portion 24, and the protruding portion 23 may be formed on the side at the lower end of the inclined surface. In any case, the bubble biting can be suppressed.

[0047] As shown in FIGS. 6(A) and 6(B), the first adsorption surface 22 preferably has the protruding portion 23 on a line segment L1 passing through the center 22C of the first adsorption surface 22, and has a pair of inclined portions 24 that are symmetric with respect to the surface with the protruding portion 23 interposed therebetween. The symmetric plane of the surface symmetry is a plane perpendicular to the bonding surface Wa of the target substrate W held by the substrate stage 10 and including the line segment L1. The die D can be deformed symmetrically with respect to the surface with the line segment L1 interposed therebetween. Also, the bonding region can be expanded symmetrically with respect to the line about the line segment L1.

[0048] Incidentally, the protruding portion 23 is provided linearly in this embodiment, but it may be provided in a dot shape. When the protruding portion 23 is provided in a dot shape, the inclined portions 24 are provided, for example, in a hemispherical shape, a conical shape or a quadrangular pyramid shape. When the protruding portion 23 is provided in a dot shape, the die D can be deformed radially about the protruding portion 23. As a result, wrinkles may occur in the die D. In this embodiment, since the die D can be deformed symmetrically with respect to the surface with the line segment L1 interposed therebetween, the occurrence of wrinkles can be suppressed.

[0049] The first adsorption surface 22 is preferably basically rectangular when viewed from the substrate stage 10 (for example, when viewed from below). This is because the non-bonding surface Db of the die D is often rectangular. The rectangle includes a square.

[0050] The first adsorption surface 22 is preferably rectangular when viewed from the substrate stage 10, has the protruding portion 23 on a line segment L1 connecting the midpoints of each of a pair of sides of the rectangle, and has a pair of inclined portions 24 that are symmetric with respect to the surface with the protruding portion 23 interposed therebetween. The bonding surface Da of the die D is often rectangular, and the bonding of the die D and the target substrate W can be started at a position bisecting the bonding surface Da of the die D.

[0051] The pair of inclined portions 24 preferably have a curved shape. For example, the pair of inclined portions 24 have a shape in which a part of a cylindrical surface or an elliptical surface has been cut off. The die D can be smoothly curved along the pair of inclined portions 24.

[0052] The pair of inclined portions 24 may also have a planar shape. Even if the pair of inclined portions 24 have a planar shape, the non-jointed surface Db of the die D is deformed into a curved shape corresponding to the bending rigidity of the die D. As a result, a gap may be created between the die D and the inclined portions 24.

[0053] As shown in Figure 6(A), it is preferable that the first adsorption surface 22 has a plurality of suction holes 25 along its periphery. When the suction mechanism 26 draws gas from each suction hole 25, a suction pressure is generated in each suction hole 25. If the plurality of suction holes 25 are formed along the periphery of the first adsorption surface 22, the die D can be bent and deformed along the entire first adsorption surface 22. It is more preferable that the first adsorption surface 22 has a pair of suction hole groups consisting of a plurality of suction holes 25 arranged in a line parallel to the line segment L1, with the line segment L1 in between.

[0054] At each suction hole 25, the die D may be locally deformed by the suction pressure. Therefore, it is preferable that each suction hole 25 be provided so as to avoid the protrusions 23. It is preferable that each suction hole 25 be at least 0.5 mm away from the line segment L1 shown in Figures 6(A) and 8(A). As shown in Figure 6(A), if the first suction surface 22 is rectangular when viewed from the substrate stage 10 and has protrusions 23 on a line segment L1 connecting the midpoints of each of the pair of sides of the rectangle, it is preferable that the distance from line segment L1 to each suction hole 25 is at least 25% of the length of each of the pair of sides. As shown in Figure 8(A), if the first suction surface 22 is rectangular when viewed from the substrate stage 10 and has protrusions 23 on a line segment L1 which is the diagonal of the rectangle, it is preferable that the distance from line segment L1 to each suction hole 25 is at least 25% of the length of the diagonal. This suppresses the start of pressing the die D against the target substrate W at the position where the die D is locally deformed, and reduces the distortion of the die D remaining after bonding.

[0055] As shown in Figure 6(B), the suction mechanism 26 draws gas from each suction port 25. The suction mechanism 26 has a suction line. The suction line forms a gas flow path. The suction mechanism 26 has, for example, an on / off valve and a pressure controller in the middle of the suction line. The on / off valve opens and closes the gas flow path under the control of the control circuit 90. The pressure controller controls the gas pressure under the control of the control circuit 90.

[0056] As shown in Figure 7, it is preferable that the control circuit 90 performs the following controls (A) to (C) in this order: (A) The first suction head 21 vacuum-adsorbs the die D. (B) The first moving mechanism 29 moves the die D closer to the target substrate W together with the first suction head 21. (C) Simultaneously with or immediately after the start of pressing the die D against the target substrate W, the first suction head 21 releases the vacuum adsorption of the die D.

[0057] (C) Simultaneously with or immediately after the start of pressing the die D against the target substrate W, the first suction head 21 releases the vacuum suction of the die D, thereby releasing local deformation of the die D due to the suction pressure and expanding the bonding area. This reduces the distortion of the die D remaining after bonding. It is preferable that the release of vacuum suction of the die D by the first suction head 21 occurs within 0.5 seconds from the start of pressing the die D against the target substrate W.

[0058] After (C) above, the pressing head 41 presses the peripheral edge of the non-joining surface Db of the die D. A pair of pressing heads 41 are provided, and as shown in Figure 6(A), it is preferable that the pair of pressing heads 41, as viewed from the substrate stage 10, are provided on opposite sides of the protruding portion 23, with different inclined portions 24 in between. It is preferable that the pressing head 41 is rectangular as viewed from the substrate stage 10. The joining area can be expanded symmetrically with respect to the line segment L1.

[0059] Referring to Figure 8, a second modification of the first suction head 21 and the pressing head 41 will be described. The differences will be mainly explained below. As shown in Figures 8(A) and 8(B), the first suction surface 22 is a rectangle with the corners at both ends of one diagonal cut off when viewed from the substrate stage 10, and has a protrusion 23 on a line segment L1 which is another diagonal of the rectangle, and may have a pair of inclined portions 24 symmetrically on either side of the protrusion 23. In this modification as well, similar to the first modification, the bonding of the die D and the target substrate W can be started at a position that bisects the bonding surface Da of the die D.

[0060] The pressing heads 41 are preferably provided at each of the two missing corners of the first suction surface 22 as viewed from the substrate stage 10, as shown in Figure 8(A). If the shape of the missing corners of the first suction surface 22 as viewed from the substrate stage 10 is triangular, then the shape of the pressing heads 41 is also preferably triangular. If the shape of the missing corners of the first suction surface 22 as viewed from the substrate stage 10 is rectangular, then the shape of the pressing heads 41 is also preferably rectangular.

[0061] Referring to Figure 9, a third modified example of the first suction head 21 and the pressing head 41 will be described. The differences will be mainly explained below. As shown in Figures 9(A) and 9(B), the first suction surface 22 is a rectangle with four corners missing when viewed from the substrate stage 10, and has a projection 23 at the center of the rectangle, and may have a spherical or conical inclined portion 24. In Figure 9(A), the dashed lines represent contour lines.

[0062] The pressing heads 41 are preferably provided at each of the four missing corners of the first suction surface 22 as viewed from the substrate stage 10, as shown in Figure 9(A). If the shape of the missing corners of the first suction surface 22 is triangular as viewed from the substrate stage 10, the shape of the pressing heads 41 is also preferably triangular. If the shape of the missing corners of the first suction surface 22 is rectangular as viewed from the substrate stage 10, the shape of the pressing heads 41 is also preferably rectangular.

[0063] A modified bonding apparatus 1 will be described, mainly with reference to Figures 10 to 11. The differences from the bonding apparatus 1 shown in Figure 1 will be mainly described below. The bonding apparatus 1 picks up a die D from a carrier E and bonds the die D to the target substrate W by facing the bonding surface Da of the picked-up die D toward the bonding surface Wa of the target substrate W. For example, the bonding apparatus 1 picks up multiple dies D one by one from the carrier E in sequence and bonds them to the target substrate W.

[0064] As shown in Figure 12, the carrier E holds multiple dies D. The carrier E holds each die D with its bonding surface Da facing upward. This allows for activation and hydrophilization of the bonding surface Da of each die D. The carrier E has a carrier substrate E1 and a resin film E2 provided on the surface of the carrier substrate E1 facing the die D.

[0065] Carrier E holds multiple dies D on a resin film E2. Carrier E can, for example, electrostatically attract the dies D. Alternatively, by pressing the dies D against the resin film E2, the resin film E2 can be deformed to allow gas to escape from between the dies D and the resin film E2, making it possible to vacuum-adsorb the dies D to the resin film E2. Carrier E may also attract the dies D by intermolecular forces.

[0066] The carrier substrate E1 may be conductive or insulating. A first through-hole E3 is formed in the carrier substrate E1, penetrating through the substrate in the thickness direction. The die D can be detached from the carrier E by supplying gas to the first through-hole E3 or by inserting a pin (not shown) into the first through-hole E3. The number and arrangement of the first through-holes E3 are not particularly limited. One or more first through-holes E3 may be formed for each die D.

[0067] The resin film E2 is preferably composed of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability when modifying the bonding surface Da of the die D, the resin film E2 is preferably composed of, for example, polyimide or EVA (ethylene vinyl acetate copolymer). The thickness of the resin film E2 is, for example, 10 μm. In this embodiment, the resin film E2 is a single layer, but it may be a multi-layer structure. For example, the resin film E2 may have a polyolefin layer and an acrylic adhesive layer.

[0068] The bonding apparatus 1 includes a carrier stage 50. The carrier stage 50 holds the carrier E. For example, the carrier stage 50 holds the carrier substrate E1 from below with the resin film E2 of the carrier E facing upwards. The carrier stage 50 is, for example, a vacuum suction chuck. The carrier stage 50 may also have an inverted structure, with the resin film E2 of the carrier E facing downwards and the carrier substrate E1 held from above. Alternatively, the carrier stage 50 may have a vertically oriented structure, holding the carrier E in a vertical position.

[0069] The joining device 1 includes a pickup device 60. The pickup device 60 picks up the die D from the carrier E held by the carrier stage 50. The pickup device 60 may have a structure corresponding to the structure of the carrier stage 50. The pickup device 60 may have an inverted structure. The pickup device 60 may also have a vertically standing structure.

[0070] The pickup device 60 may transport the die D. The pickup device 60 may also invert the die D during transport so that the bonding surface Da of the die D faces downward. The mounting device 20 receives the die D from the pickup device 60 and mounts the received die D onto the target substrate W held by the substrate stage 10.

[0071] The pickup device 60 has a second suction head 61. The second suction head 61 has a second suction surface 62 for adsorbing the die D. The second suction surface 62 of the second suction head 61 may be in contact with the bonding surface Da of the die D, for example, the die D may be adsorbed by vacuum. Alternatively, the second suction head 61 may adsorb the die D without contact so as not to contaminate the bonding surface Da of the die D.

[0072] For example, the second suction head 61 may have a suction nozzle and an injection nozzle (not shown) on the second suction surface 62. The suction nozzle draws in gas, and the injection nozzle injects gas. The second suction head 61 can non-contact adsorb the die D using the gas injection pressure (positive pressure) and the gas suction pressure (negative pressure). The adsorption method is not particularly limited. Examples of non-contact adsorption methods include the Bernoulli method or the ultrasonic method.

[0073] The pickup device 60 has a fourth moving mechanism 69. The fourth moving mechanism 69 moves the die D together with the second suction head 61. The movement directions include the X-axis direction and the Z-axis direction. The movement directions may also include the Y-axis direction. The fourth moving mechanism 69 may also invert the die D vertically together with the second suction head 61. The bonding surface Da of the die D can be inverted vertically. The fourth moving mechanism 69 has, for example, a motor for each movement direction.

[0074] The control circuit 90 controls the transfer of the die D from the second suction head 61 to the first suction head 21. The roles can be divided between the first suction head 21 and the second suction head 61. For example, while the first suction head 21 presses one die D onto the target substrate W, the second suction head 61 can pick up another die D from the carrier E. Thus, the processing speed can be improved.

[0075] As shown in Figures 10 and 11, the bonding apparatus 1 preferably includes a pressing device 70. The pressing device 70 assists in the pickup of the die D by the pickup device 60. The pressing device 70 presses the resin film E2, for example, by supplying gas to the first through-hole E3 of the carrier substrate E1, or by inserting a pin (not shown) into the first through-hole E3. The direction of pressing is the direction in which the die D is picked up (for example, the positive Z-axis direction). The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, a wedge-shaped gap can be formed between the resin film E2 and the die D, and the die D can be smoothly picked up from the resin film E2.

[0076] The joining device 1 includes a fifth moving mechanism 59. The fifth moving mechanism 59 moves the pressing device 70 and the carrier stage 50 relative to each other in order to change the die D that is pressed by the pressing device 70. In this embodiment, the fifth moving mechanism 59 moves the carrier stage 50, but it may also move the pressing device 70. The fifth moving mechanism 59 may also move both the carrier stage 50 and the pressing device 70.

[0077] The fifth moving mechanism 59 preferably moves only the carrier stage 50 in the X-axis and Y-axis directions, compared to the carrier stage 50 and the pressing device 70. If the pressing device 70 does not move in the X-axis and Y-axis directions, the pickup device 60 can pick up the die D at the same position each time. Therefore, the operation of the pickup device 60 can be simplified.

[0078] The joining device 1 preferably has the following configurations: (1) The carrier stage 50 has a first surface 51 that the carrier E contacts, a second surface 52 facing the opposite direction from the first surface 51, and a plurality of second through holes 53 that penetrate between the first surface 51 and the second surface 52. (2) The pressing device 70 has a gas supply mechanism 73 that supplies gas to the first through hole E3 via the second through holes 53.

[0079] Although not shown in the figures, the carrier stage 50 may be formed in an annular shape, and the pressing device 70 may be provided radially inward from the inner circumference of the annular carrier stage 50. In this case, the pressing head 71 forms a gas supply chamber between itself and the carrier E, and the sealing member 72 contacts the carrier E (specifically the carrier substrate E1) to seal the gas supply chamber.

[0080] However, if the pressing device 70 is positioned radially inward from the inner circumference of the annular carrier stage 50, the range of motion of the carrier stage 50 or the pressing device 70 in the X-axis and Y-axis directions becomes limited. The pressing device 70 can only press dies D that are located radially inward from the inner circumference of the annular carrier stage 50. Consequently, the number of dies D that can be mounted on the carrier E becomes limited.

[0081] According to the configurations described in (1) and (2) above, when the fifth moving mechanism 59 moves the pressing device 70 and the carrier stage 50 relative to each other in the X-axis and Y-axis directions, no interference occurs between the pressing device 70 and the carrier stage 50. As a result, the number of dies D that can be mounted on the carrier E can be increased. Therefore, the frequency of carrier E replacement can be reduced, and throughput can be improved.

[0082] When the pressing device 70 presses the resin film E2, the carrier substrate E1 may deform gently around the pressed area. Therefore, the carrier stage 50 has suction grooves 54 on its first surface 51 for vacuum adsorption of the carrier substrate E1. The carrier stage 50 can suppress deformation of the carrier substrate E1 around the pressing device 70. The suction grooves 54 are preferably provided between adjacent second through holes 53 in order to locally deform the resin film E2. The suction grooves 54 are formed, for example, in a grid pattern.

[0083] It is preferable that the sealing member 72 contacts the carrier stage 50 rather than the carrier E. The sealing member 72 contacts the second surface 52 of the carrier stage 50. Even if the sealing member 72 deteriorates and generates particles, causing the second surface 52 of the carrier stage 50 to become contaminated, the first surface 51 of the carrier stage 50 will hardly become contaminated. Therefore, contamination of the carrier E can be suppressed.

[0084] Another effect can be obtained when the sealing member 72 comes into contact with the carrier stage 50. If the accuracy of the parallelism between the sealing member 72 and the carrier stage 50 is low, the sealing member 72 can be pressed firmly against the carrier stage 50 to prevent gas leakage. Since the carrier stage 50 has higher rigidity than the carrier E, the carrier stage 50 will not be damaged. Therefore, the required accuracy of parallelism is low, and the parallelism adjustment work is simple.

[0085] The gas supply mechanism 73 supplies gas to the first through-hole E3 via the second through-hole 53 by supplying gas to the pressing head 71. The gas supply mechanism 73 has a supply line. The supply line forms a gas flow path. The gas supply mechanism 73 has, for example, an on-off valve and a pressure controller in the middle of the supply line. The on-off valve opens and closes the gas flow path under the control of the control circuit 90. The pressure controller controls the gas pressure under the control of the control circuit 90. The gas supply mechanism 73 may also have a leak valve in the middle of the supply line. The leak valve discharges gas.

[0086] Preferably, at the boundary between the carrier stage 50 and the carrier E, the first through-hole E3 and the second through-hole 53 are connected in a one-to-one ratio. The number of second through-holes 53 may be equal to or greater than the number of first through-holes E3, and may be greater than the number of first through-holes E3. It is sufficient that the second through-holes 53 are located where the first through-holes E3 are, and the first through-holes E3 and the second through-holes 53 are not connected in a one-to-one ratio.

[0087] At the boundary between the carrier stage 50 and the carrier E, it is preferable that the opening of the second through-hole 53 is smaller than the opening of the first through-hole E3 and positioned inside the opening of the first through-hole E3. In this case, since the gas pressure acts almost no way on the carrier substrate E1, the bending of the carrier substrate E1 can be suppressed. Only the resin film E2 can be deformed.

[0088] The pressing device 70 may use a plurality of second through holes 53 and a plurality of first through holes E3 to press a die D. For example, the pressing device 70 supplies gas to the plurality of first through holes E3 via the plurality of second through holes 53 to press a die D. A die D can be pressed at multiple points. It is also possible to divide the multiple points into multiple groups and press them sequentially.

[0089] The pressing device 70 includes a drive shaft 74. The drive shaft 74 moves the pressing head 71 in a first direction (e.g., positive Z-axis direction) and a second direction opposite to the first direction (e.g., negative Z-axis direction). When moving the pressing device 70 and the carrier stage 50 relative to each other in the X-axis and Y-axis directions to change the die D pressed by the pressing device 70, the sealing member 72 can be separated from the carrier stage 50. The drive shaft 74 includes an actuator such as a motor or cylinder.

[0090] A modified example of the pressing device 70 will be described with reference to Figure 13. As shown in Figure 13, the pressing device 70 may have a pin drive mechanism 79 that inserts a pin 78 into the first through hole E3 via the second through hole 53. The pin 78 presses the resin film E2. The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, a wedge-shaped gap can be formed between the resin film E2 and the die D, and the die D can be smoothly picked up from the resin film E2. When the pressing device 70 has a pin drive mechanism 79, the sealing member 72 shown in Figures 10 and 11 is unnecessary.

[0091] The pin drive mechanism 79 has a drive shaft. The drive shaft has an actuator such as a motor or cylinder. The drive shaft moves the pin 78 in a first direction (positive Z-axis direction) and a second direction (negative Z-axis direction). When the pressing device 70 and the carrier stage 50 are moved relative to each other in the X-axis direction and Y-axis direction in order to change the die D that is pressed by the pressing device 70, the pin 78 can be withdrawn from the first through hole E3 and the second through hole 53.

[0092] The pressing device 70 may use multiple second through holes 53 and multiple first through holes E3 to press one die D. For example, the pressing device 70 may insert pins 78 through multiple second through holes 53 into multiple first through holes E3 to press one die D. One die D can be pressed at multiple points. It is also possible to divide the multiple points into multiple groups and press them sequentially.

[0093] A modified example of the mounting device 20 will be described with reference to Figures 15 and 16. The differences will be explained below.

[0094] The mounting device 20 mounts the die D, separated from the carrier E, onto the target substrate W held by the substrate stage 10. The mounting device 20 has a first suction head 21 and a first moving mechanism 29. The first suction head 21 picks up the die D. The first moving mechanism 29 moves the die D together with the first suction head 21 and presses the die D against the target substrate W.

[0095] The first suction head 21 holds the die D from below, with the bonding surface Da of the die D facing upwards. If the arrangement of the first suction head 21 and the substrate stage 10 is reversed, the first suction head 21 holds the die D from above, with the bonding surface Da of the die D facing downwards.

[0096] The first suction head 21 adsorbs, for example, the non-bonding surface Db of the die D. Since it is not a problem if the non-bonding surface Db is dirty, the first suction head 21 may come into contact with the die D. This can improve the suction force and suppress misalignment. The first suction head 21 adsorbs the die D, for example, using vacuum suction.

[0097] The first suction head 21 has a first suction surface 22 that faces the non-bonding surface Db of the die D. The first suction surface 22 is larger than the non-bonding surface Db of the die D in order to press against the entire non-bonding surface Db.

[0098] The first moving mechanism 29 moves the first suction head 21 horizontally. The first moving mechanism 29 includes, for example, a movable stage 29A and a first horizontal moving section 29B. The first horizontal moving section 29B moves the movable stage 29A horizontally. The first horizontal moving section 29B includes, for example, a Y-axis guide (not shown), a Y-axis drive unit, an X-axis guide, and an X-axis drive unit. The first suction head 21 moves horizontally together with the movable stage 29A. The Y-axis guide is fixed to the upper surface of a frame (not shown) and guides the movable stage 29A in the Y-axis direction. The Y-axis drive unit moves the movable stage 29A in the Y-axis direction together with the X-axis guide. The X-axis guide guides the movable stage 29A in the X-axis direction. The X-axis drive unit moves the movable stage 29A in the X-axis direction. The Y-axis drive unit and the X-axis drive unit each include, for example, a linear motor. Instead of a linear motor, a rotary motor and a ball screw that converts the rotational motion of the rotary motor into linear motion may be used.

[0099] The first moving mechanism 29 moves the first suction head 21 vertically. The first moving mechanism 29 has a first lifting unit 29C. The first lifting unit 29C presses the die D against the target substrate W by raising the first suction head 21. The first lifting unit 29C is mounted on, for example, a movable stage 29A and moves horizontally together with the movable stage 29A. The first lifting unit 29C includes, for example, a linear motor. Instead of a linear motor, a rotary motor and a ball screw that converts the rotational motion of the rotary motor into linear motion may be used. If the arrangement of the first suction head 21 and the substrate stage 10 is upside down, the first lifting unit 29C presses the die D against the target substrate W by lowering the first suction head 21.

[0100] Although not shown in the diagram, multiple first suction heads 21 may be provided. Each first suction head 21 is provided with a movable stage 29A and a first lifting unit 29C. Multiple movable stages 29A are configured to move individually in the X-axis direction and the Y-axis direction. For example, each movable stage 29A is provided with a Y-axis drive unit, an X-axis guide and another X-axis drive unit. The Y-axis guide may be provided for each movable stage 29A, or it may be provided in common for multiple movable stages 29A. In the latter case, one movable stage 29A cannot overtake another movable stage 29A in the Y-axis direction.

[0101] The first moving mechanism 29 includes a tilt adjustment unit 29D. The tilt adjustment unit 29D adjusts the tilt of the first suction surface 22 of the first suction head 21. The tilt adjustment unit 29D is attached to the movable stage 29A and adjusts the tilt of the first suction head 21 by adjusting the tilt of the first lifting unit 29C. The first lifting unit 29C is attached to the movable stage 29A via the tilt adjustment unit 29D and raises and lowers the first suction head 21 without raising or lowering the tilt adjustment unit 29D.

[0102] Note that the arrangement of the tilt adjustment unit 29D and the first lifting unit 29C may be reversed. The tilt adjustment unit 29D may be attached to the movable stage 29A via the first lifting unit 29C, and the tilt of the first suction head 21 may be adjusted without adjusting the tilt of the first lifting unit 29C. In this case, the first lifting unit 29C is attached to the movable stage 29A, and the first suction head 21 is raised and lowered by raising and lowering the tilt adjustment unit 29D.

[0103] The tilt adjustment unit 29D adjusts the tilt of the first suction head 21 as viewed from the X-axis direction and the tilt of the first suction head 21 as viewed from the Y-axis direction. The tilt adjustment unit 29D has, for example, a spherical seat 29Da, and adjusts the tilt of the first suction head 21 by rotating the first suction head 21 around the center of the sphere of the spherical seat 29Da. Note that the tilt adjustment unit 29D does not necessarily have a spherical seat 29Da. The tilt adjustment unit 29D may also adjust the tilt of the first suction head 21 using one fixed shaft and two lifting shafts, which are not shown.

[0104] The first moving mechanism 29 includes at least three or more first displacement gauges 29E. Each first displacement gauge 29E is fixed to the first suction head 21. Each first displacement gauge 29E measures the distance L2 from the first displacement gauge 29E to the bonding surface Wa of the target substrate W held on the substrate stage 10. Each first displacement gauge 29E is calibrated in advance so that the distance from each first displacement gauge 29E to the extended surface of the first suction surface 22 of the first suction head 21 is zero.

[0105] At least two first displacement gauges 29E are arranged at intervals in the X-axis direction to measure the inclination of the joint surface Da with respect to the joint surface Wa as viewed from the Y-axis direction. At least two first displacement gauges 29E are also arranged at intervals in the Y-axis direction to measure the joint surface Da with respect to the joint surface Wa as viewed from the X-axis direction. In this embodiment, the total number of first displacement gauges 29E is three, but it may be four or more.

[0106] Each first displacement sensor 29E is, for example, a laser displacement sensor. The laser displacement sensor irradiates an object with a laser beam, receives the laser beam reflected by the object, and measures the distance L2. Each first displacement sensor 29E may also be a capacitive displacement sensor. The capacitive displacement sensor measures the capacitance between the capacitive displacement sensor and the object and calculates the distance L2. Each first displacement sensor 29E may be a contact type, not just a non-contact type.

[0107] The bonding apparatus 1 includes a first suction head 21 and a first lifting unit 29C, as well as a pressing head 41 and a second lifting unit 49A. The pressing head 41 presses the non-bonding surface Db of the die D after the die D is pressed against the target substrate W by the first lifting unit 29C. The pressing head 41 presses the die D from below, for example. If the arrangement of the first suction head 21 and the substrate stage 10 is reversed vertically, the pressing head 41 presses the die D from above.

[0108] The pressing head 41 has a pressing surface 42 that faces the non-joint surface Db of the die D. The pressing surface 42 is larger than the non-joint surface Db in order to press the entire non-joint surface Db of the die D. Unlike the first suction head 21, the pressing head 41 does not suction the die D, so it is not necessary to form suction holes in the die D, which simplifies the structure compared to the first suction head 21 and allows for the application of higher loads.

[0109] The second lifting section 49A raises the pressing head 41 independently of the first suction head 21. The second lifting section 49A presses the die D against the target substrate W with a higher load, and therefore a higher pressure, than the first lifting section 29C. This can crush air bubbles present at the interface between the die D and the target substrate W, thereby improving bonding quality.

[0110] Incidentally, the tilt adjustment unit 29D adjusts the tilt of the bonding surface Da of the die D by adjusting the tilt of the first suction surface 22 of the first suction head 21. Therefore, the die D can be bonded to the target substrate W with high precision. However, the tilt adjustment unit 29D has a complex mechanism and it is difficult to apply a high load to it.

[0111] On the other hand, the bonding device 1 does not adjust the inclination of the pressing surface 42 of the pressing head 41. Therefore, a complex mechanism is not required between the pressing head 41 and the movable stage 29A, and a high load can be applied to the pressing head 41. As a result, air bubbles present at the interface between the die D and the target substrate W can be crushed, improving bonding quality.

[0112] The first suction head 21 and the pressing head 41 are mounted on the same movable stage 29A. In this case, the control circuit 90 performs the following (D), (E), and (F) in this order: (D) Control the first lifting unit 29C to press the die D against the target substrate W (see Figure 15). (E) Control the first horizontal movement unit 29B to move the movable stage 29A horizontally. (F) Control the second lifting unit 49A to press the die D against the target substrate W with a higher load than the first lifting unit 29C (see Figure 16).

[0113] An example of the bonding system 101 will be described with reference to Figure 17. The bonding system 101 prepares a carrier E on which a plurality of dies D are adsorbed. As shown in Figure 12, the carrier E has a carrier substrate E1 and a resin film E2. However, the carrier E may have a configuration other than that shown in Figure 12. For example, the carrier E may have a frame and a tape that covers the opening of the frame, and the dies D may be mounted on the tape. The non-bonding surface Db of the die D is in contact with the tape.

[0114] The bonding system 101 manufactures a laminated substrate DW by bonding a die D separated from a carrier E to a target substrate W. The laminated substrate DW includes a target substrate W and a plurality of dies D bonded to the target substrate W. The bonding system 101 repeatedly bonds the dies D to the target substrate W, bonding the plurality of dies D to the target substrate W one by one in sequence. The dies D are smaller than the target substrate W, and multiple dies D are bonded to a single target substrate W.

[0115] As shown in Figure 17, the bonding system 101 includes a control circuit 190. The control circuit 190 includes electronic circuits such as a CPU (Central Processing Unit), GPU (Graphics Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control circuit 190 performs various control operations described in this specification by executing instruction codes stored in a storage medium such as memory, or by being circuit-designed for special applications.

[0116] The control circuit 190 is, for example, a computer. The control circuit 190 includes, for example, an arithmetic unit 191 such as a CPU and a storage unit 192 such as memory. The storage unit 192 stores a program that controls various processes executed in the junction system 101. The control circuit 190 controls the operation of the junction system 101 by causing the arithmetic unit 191 to execute the program stored in the storage unit 192. A lower-level control circuit is provided for each device constituting the junction system 101 to control the operation of that device, and a higher-level control circuit may be provided to comprehensively control multiple lower-level control circuits. The control circuit 190 may be composed of multiple lower-level control circuits and a higher-level control circuit.

[0117] The program, or computer program product, may be supplied in a form recorded on a removable storage medium such as a memory card, optical disc, or HDD (Hard Disk Drive). The control circuit 190 reads the program from the storage medium and stores it in the storage unit 192. The storage unit 192 is equipped with a storage medium such as an HDD, SSD (Solid State Drive), or EEPROM (Electronically Erasable Programmable Read Only Memory). The program may be pre-written to the storage medium of the storage unit 192. The control circuit 190 may also acquire programs distributed by a remote server device or the like via a network or other communication.

[0118] As shown in Figure 17, the joining system 101 includes an input / output station 102 and a processing station 105. The input / output station 102 and the processing station 105 are arranged in a line from the negative X-axis direction to the positive X-axis direction in this order. Although not shown, there may be multiple processing stations 105, and multiple processing stations 105 may be arranged in a line from the negative X-axis direction to the positive X-axis direction.

[0119] The loading / unloading station 102 is equipped with a mounting table 120. The mounting table 120 is used to place the first cassette Cs1, the second cassette Cs2, the third cassette Cs3, and the fourth cassette Cs4. The first cassette Cs1 contains the carrier E before the die D is separated. The second cassette Cs2 contains the carrier E after the die D has been separated. The third cassette Cs3 contains the target substrate W before the die D is bonded. The fourth cassette Cs4 contains the target substrate W after the die D has been bonded (i.e., the laminated substrate DW).

[0120] The loading / unloading station 102 comprises a second transport area 121 and a second transport device 122. The second transport area 121 is adjacent to the mounting table 120. The second transport area 121 extends in the Y-axis direction. The second transport device 122 has a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the second transport area 121. There may be one or more transport arms. A transport arm for the target substrate W and a transport arm for the carrier E may be provided separately. The second transport device 122 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and rotating about the vertical axis.

[0121] The processing station 105 includes a first storage device 150. The first storage device 150 is adjacent to the second transport area 121. The first storage device 150 is positioned on the opposite side of the mounting table 120 with respect to the second transport area 121. The first storage device 150 temporarily stores the target substrate W and the carrier E. The first storage device 150 has a plurality of stages arranged vertically. Each stage places at least one of the target substrate W and the carrier E on it. The stage for the target substrate W and the stage for the carrier E may be provided separately.

[0122] The first storage device 150 inverts the target substrate W before bonding, so that the bonding surface Wa of the target substrate W faces downwards. Although not shown, the first storage device 150 has an inversion chuck for adsorbing the target substrate W before bonding, and an inversion mechanism for inverting the inversion chuck. The first storage device 150 also inverts the laminated substrate DW, so that the target substrate W faces downwards and the die D faces upwards. Although not shown, the first storage device 150 has an inversion chuck for adsorbing the laminated substrate DW, and an inversion mechanism for inverting the inversion chuck.

[0123] The processing station 105 comprises a first transport area 151 and a first transport device 152. The first transport area 151 is adjacent to the first storage device 150 and extends from the first storage device 150 in the positive X-axis direction. The first transport device 152 has a transport arm. The transport arm holds and transports the target substrate W and the carrier E in the first transport area 151. There may be one or more transport arms. A transport arm for the target substrate W and a transport arm for the carrier E may be provided separately. The first transport device 152 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm is capable of moving horizontally (in both the X-axis direction and the Y-axis direction) and vertically (in the Z-axis direction), and rotating about the vertical axis.

[0124] The processing station 105 includes a bonding device 1 and a second pressing device 153. The bonding device 1 and the second pressing device 153 are adjacent to the first transport area 151 and are provided on the positive or negative Y-axis side of the first transport area 151. The bonding device 1 separates the die D from the carrier E and bonds the die D to the target substrate W by facing the bonding surface Da of the separated die D toward the bonding surface Wa of the target substrate W. The second pressing device 153 presses the die D against the target substrate W with a higher load and thus higher pressure than the bonding device 1. Details of the second pressing device 153 will be described later.

[0125] An example of the operation of the bonding system 101 with the above configuration will now be described. First, the second transport device 122 takes the carrier E from the first cassette Cs1 and transports it to the first storage device 150. Next, the first transport device 152 takes the carrier E from the first storage device 150 and transports it to the bonding device 1. Also, the second transport device 122 takes the target substrate W from the third cassette Cs3 and transports it to the first storage device 150. The first storage device 150 inverts the target substrate W so that the bonding surface Wa of the target substrate W faces downwards. After that, the first transport device 152 takes the target substrate W from the first storage device 150 and transports it to the bonding device 1.

[0126] Next, the bonding apparatus 1 separates the die D from the carrier E, and then faces the bonding surface Da of the separated die D toward the bonding surface Wa of the target substrate W, thereby bonding the die D to the target substrate W (step S105). Note that if multiple dies D are electrically connected to a single device W2, the bonding of the dies D to the target substrate W is performed separately for each type of die D.

[0127] After the die D is bonded, the target substrate W, i.e., the laminated substrate DW, is transported to the fourth cassette Cs4 via the second pressing device 153. First, the first transport device 152 removes the laminated substrate DW from the bonding device 1 and transports it to the first storage device 150. The first storage device 150 inverts the laminated substrate DW so that the target substrate W is at the bottom and the die D is at the top. Then, the first transport device 152 removes the laminated substrate DW from the first storage device 150 and transports it to the second pressing device 153. The second pressing device 153 presses the die D against the target substrate W with a higher load and thus higher pressure than the bonding device 1. Next, the first transport device 152 removes the laminated substrate DW from the second pressing device 153 and transports it to the first storage device 150. Finally, the second transport device 122 removes the laminated substrate DW from the first storage device 150 and stores it in the fourth cassette Cs4.

[0128] After the bonding device 1 bonds the die D and the target substrate W, the first storage device 150 inverts the laminated substrate DW vertically before the second pressing device 153 presses the die D against the target substrate W. However, the first storage device 150 does not have to invert the laminated substrate DW vertically. In other words, when the second pressing device 153 presses the die D against the target substrate W, the target substrate W is positioned below and the die D is positioned above. However, the positions of the die D and target substrate W may be reversed, with the target substrate W on top and the die D on the bottom. The laminated substrate DW may be transported from the bonding device 1 to the second pressing device 153 without passing through the first storage device 150.

[0129] After die D is separated, carrier E is stored in second cassette Cs2. First, the first transport device 152 removes carrier E after die D has been separated from the joining device 1 and transports it to the first storage device 150. Finally, the second transport device 122 removes carrier E after die D has been separated from the first storage device 150 and stores it in second cassette Cs2.

[0130] The second pressing device 153 presses the die D against the target substrate W with a higher load and thus higher pressure than the bonding device 1 after the die D and target substrate W have been bonded by the bonding device 1. This crushes any air bubbles present at the interface between the die D and the target substrate W, thereby improving bonding quality. If the bonding system 101 includes the second pressing device 153, the bonding device 1 may or may not have a pressing head 41.

[0131] An example of the second pressing device 153 will be described with reference to Figure 18. The second pressing device 153 presses the die D against the target substrate W with a higher load and thus higher pressure than the bonding device 1. The second pressing device 153 presses, for example, multiple dies D that make up the laminated substrate DW against the target substrate W all at once.

[0132] The second pressing device 153 comprises, for example, a lower plate 153A, an upper plate 153B, and a pressure generating unit 153C. The lower plate 153A is provided below the laminated substrate DW. The upper plate 153B is provided above the laminated substrate DW. The pressure generating unit 153C is composed of a cylinder or the like and pressurizes the laminated substrate DW by sandwiching it between the lower plate 153A and the upper plate 153B.

[0133] The lower plate 153A and the upper plate 153B are larger than the laminated substrate DW in order to press against the entire laminated substrate DW. At least one of the lower plate 153A and the upper plate 153B may have a cushioning material on its surface to allow for variations in the thickness of the die D. In addition, at least one of the lower plate 153A and the upper plate 153B may have a heater inside to heat the laminated substrate DW in order to improve the bonding strength between the die D and the target substrate W.

[0134] A modified example of the second pressing device 153 will be described with reference to Figure 19. The second pressing device 153 may include a lower plate 153A, a first pressure roller 153D, and a sliding mechanism 153E. The lower plate 153A is provided below the laminated substrate DW. The first pressure roller 153D is provided above the laminated substrate DW. The sliding mechanism 153E moves the lower plate 153A and the first pressure roller 153D relatively horizontally. In this modified example, the sliding mechanism 153E moves the lower plate 153A horizontally, but it may also move the first pressure roller 153D horizontally.

[0135] The lower plate 153A is larger than the laminated substrate DW in order to press against the entire laminated substrate DW. The first pressure roller 153D is longer than the dimensions of the laminated substrate DW in the longitudinal direction of the first pressure roller 153D (e.g., the Y-axis direction). At least one of the lower plate 153A and the first pressure roller 153D may have a cushioning material on its surface to allow for variations in the thickness of the die D. The sliding mechanism 153E moves the lower plate 153A and the first pressure roller 153D relative to each other in a horizontal direction (e.g., the X-axis direction) perpendicular to the longitudinal direction of the first pressure roller 153D.

[0136] The second pressing device 153 may also include a second pressure roller (not shown) instead of the lower plate 153A. The second pressure roller is located below the laminated substrate DW. The second pressure roller is positioned parallel to the first pressure roller 153D. The second pressure roller is longer than the dimensions of the laminated substrate DW in the longitudinal direction of the second pressure roller (e.g., the Y-axis direction). The first pressure roller 153D and the second pressure roller feed the laminated substrate DW from between them. The feeding direction is the horizontal direction (e.g., the X-axis direction) perpendicular to the longitudinal direction of the first pressure roller 153D. In this case, the sliding mechanism 153E is not required. The second pressing device 153 includes a rotary motor to rotate at least one of the first pressure roller 153D and the second pressure roller. It is also possible to passively rotate the other by rotating one of the first pressure roller 153D and the second pressure roller.

[0137] The second pressing device 153 may also include an upper plate 153B, a second pressure roller, and a sliding mechanism 153E. The upper plate 153B is larger than the laminated substrate DW in order to press the entire laminated substrate DW. The second pressure roller is longer than the dimensions of the laminated substrate DW in the longitudinal direction of the second pressure roller (e.g., the Y-axis direction). At least one of the upper plate 153B and the second pressure roller may have a cushioning material on its surface to allow for variations in the thickness of the die D. The sliding mechanism 153E moves the upper plate 153B and the second pressure roller relative to each other in a horizontal direction (e.g., the X-axis direction) perpendicular to the longitudinal direction of the second pressure roller.

[0138] The embodiments of the joining apparatus, joining method, and joining system described above have been explained, but this disclosure is not limited to the embodiments described above. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally fall within the technical scope of this disclosure.

[0139] This application claims priority based on Japanese Patent Application No. 2024-227746, filed with the Japan Patent Office on December 24, 2024, and Japanese Patent Application No. 2025-192592, filed with the Japan Patent Office on November 12, 2025, and the entire contents of Japanese Patent Application No. 2024-227746 and Japanese Patent Application No. 2025-192592 are incorporated herein by reference.

[0140] 1 Bonding device 10 Substrate stage 21 First suction head 29 First moving mechanism 41 Pressing head 49 Second moving mechanism D Die Da Bonding surface Db Non-bonding surface W Target substrate Wa Bonding surface

Claims

1. A bonding apparatus for bonding a die and a target substrate, wherein the bonding surface of the die, which has a bonding surface and a non-bonding surface facing the opposite direction from the bonding surface, is directed toward the bonding surface of the target substrate, the apparatus comprising: a substrate stage for holding the target substrate; a first suction head for adsorbing a portion of the non-bonding surface of the die; a first moving mechanism for moving the die together with the first suction head and pressing the die against the target substrate; a pressing head for pressing another portion of the non-bonding surface of the die; and a second moving mechanism for moving the pressing head independently of the first suction head and pressing the die against the target substrate.

2. The bonding apparatus according to claim 1, wherein the first suction head presses at least the center of the non-bonding surface of the die, and the pressing head presses the peripheral edge of the non-bonding surface of the die.

3. The bonding apparatus according to claim 2, comprising a control circuit, wherein the control circuit controls the first moving mechanism to press the die against the target substrate with the first suction head, and controls the second moving mechanism to press the die against the target substrate with the pressing head, in this order.

4. The bonding apparatus according to claim 3, wherein the first suction head holds the bonding surface of the die facing upward.

5. The bonding apparatus according to claim 2, wherein the first suction head has a first suction surface for adsorbing the die, and the first suction surface is a surface facing the substrate stage and has a protruding portion that protrudes the most toward the substrate stage and an inclined portion that moves further away from the substrate stage as it moves away from the protruding portion.

6. The bonding device according to claim 5, wherein the first suction surface has a plurality of suction holes along the periphery of the first suction surface, and each of the suction holes is provided so as to avoid the protruding portion.

7. The bonding apparatus according to claim 6, comprising a suction mechanism that generates suction pressure in each of the suction holes by sucking gas from each of the suction holes, and a control circuit, wherein the control circuit controls the suction mechanism so that the first suction head vacuum-adsorbs the die, controls the first moving mechanism so that the die approaches the target substrate together with the first suction head, and controls the suction mechanism so that the first suction head releases vacuum suction of the die at the same time as or immediately after the start of pressing the die against the target substrate.

8. The bonding device according to claim 5, wherein the first suction surface has the projection on a line segment passing through the center of the first suction surface, and has a pair of inclined portions arranged symmetrically on either side of the projection.

9. The bonding apparatus according to claim 5, wherein the first adsorption surface is rectangular when viewed from the substrate stage, has the protrusion on a line segment connecting the midpoints of each of a pair of sides of the rectangle, and has a pair of inclined portions arranged symmetrically on either side of the protrusion.

10. The bonding apparatus according to claim 9, wherein a pair of pressing heads are provided, and as viewed from the substrate stage, the pair of pressing heads are provided on opposite sides of the protruding portion, with different inclined portions in between.

11. The bonding apparatus according to claim 5, wherein the first adsorption surface is a rectangle with the corners at both ends of one diagonal cut off when viewed from the substrate stage, has the protrusion on a line segment which is another diagonal of the rectangle, and has a pair of inclined portions arranged symmetrically on either side of the protrusion.

12. The bonding apparatus according to claim 11, wherein the pressing heads are provided at each of the two missing corners of the first suction surface, as viewed from the substrate stage.

13. The bonding apparatus according to claim 5, wherein the first adsorption surface is a rectangle with four corners missing when viewed from the substrate stage, has the protruding portion at the center of the rectangle, and has the spherical or conical inclined portion.

14. The bonding apparatus according to claim 13, wherein the pressing heads are provided at each of the four missing corners of the first suction surface as viewed from the substrate stage.

15. A bonding method for bonding the die to the target substrate using a bonding apparatus according to any one of claims 1 to 14.

16. A bonding apparatus for bonding a die and a target substrate, wherein the bonding surface of the die, which has a bonding surface and a non-bonding surface facing opposite directions from the bonding surface, is directed toward the bonding surface of the target substrate, the apparatus comprising: a substrate stage for holding the target substrate; a first suction head for adsorbing the non-bonding surface of the die; a first lifting unit for raising or lowering the die together with the first suction head and pressing the die against the target substrate; a pressing head for pressing the non-bonding surface of the die after the die has been pressed against the target substrate by the first lifting unit; and a second lifting unit for raising or lowering the pressing head independently of the first suction head and pressing the die against the target substrate with a higher load than the first lifting unit.

17. The bonding apparatus according to claim 16, wherein the first suction head has a first suction surface facing the non-bonding surface of the die, and is provided with a tilt adjustment unit for adjusting the tilt of the first suction surface of the first suction head.

18. The bonding apparatus according to claim 17, wherein the pressing head has a pressing surface facing the non-bonding surface of the die, and the inclination of the pressing surface of the pressing head is not adjusted.

19. The bonding apparatus according to claim 16, comprising: a movable stage on which the first suction head and the pressing head are mounted; a horizontal movement unit for moving the movable stage horizontally; and a control circuit, wherein the control circuit controls the first lifting unit to press the die against the target substrate, controls the horizontal movement unit to move the movable stage horizontally, and controls the second lifting unit to press the die against the target substrate with a higher load than the first lifting unit, in this order.

20. A bonding system comprising: a bonding device for bonding a die and a target substrate, with the bonding surface of the die having a bonding surface and a non-bonding surface facing the opposite direction from the bonding surface facing the bonding surface of the target substrate; a second pressing device for pressing the die against the target substrate with a higher load than the bonding device after the die and the target substrate have been bonded by the bonding device; and a conveying device for conveying the target substrate from the bonding device to the second pressing device.

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