Mask, mask device, and vapor deposition method

Abstract

This mask may comprise: a base material which includes a first surface and a second surface that is positioned on the reverse side from the first surface, contains silicon or a silicon compound, and has a reference thickness; and a mask layer which includes a third surface that faces the second surface and a fourth surface that is positioned on the reverse side from the third surface. The base material may comprise an inner region and an outer region that s located outside the inner region in a plan view. The inner region may include a plurality of first openings penetrating from the first surface to the second surface, a plurality of first sash bars positioned between the plurality of first openings and extending in a first direction, and a plurality of second sash bars positioned between the plurality of first openings, extending in a second direction that is different from the first direction, and intersecting with the first sash bars. The outer region may include a plurality of recesses. The mask layer may have a plurality of second openings which overlap the first openings in a plan view and which penetrate from the third surface to the fourth surface.

Description

Mask, Mask Apparatus, and Deposition Method

[0001] Embodiments of the present disclosure relate to a mask, a mask apparatus, and a deposition method.

[0002] As a method for forming a precise pattern, a deposition method is known. In the deposition method, a mask having a plurality of openings is combined with a substrate. Subsequently, a deposition material is attached to the substrate through the openings of the mask. As a result, a deposition layer containing the deposition material is formed on the substrate in a pattern corresponding to the pattern of the openings of the mask. The deposition method is used, for example, as a method for forming pixels of an organic EL display device.

[0003] For example, Patent Document 1 discloses a mask including a base material containing silicon and a mask layer in which a plurality of openings are formed. Since the base material containing silicon and the mask layer are combined, the shape accuracy and position accuracy of the through holes in the mask layer are improved.

[0004] International Publication No. 2023 / 145951

[0005] When the mask is bent due to its own weight or the like, a non-uniform gap is generated between the substrate and the mask layer of the mask. As a result, it is conceivable that the accuracy of the position or dimension of the deposition layer formed on the substrate decreases.

[0006] A mask according to an embodiment of the present disclosure may include a first surface and a second surface located on the opposite side of the first surface, a base material containing silicon or a silicon compound and having a reference thickness, a third surface facing the second surface, and a fourth surface located on the opposite side of the third surface, and a mask layer. The base material may include an inner region and an outer region located outside the inner region in a plan view. The inner region may include a plurality of first openings penetrating from the first surface to the second surface, a plurality of first bars located between the plurality of first openings and extending in a first direction, and a plurality of second bars located between the plurality of first openings, extending in a second direction different from the first direction, and intersecting the first bars. The outer region may include a plurality of recesses. The mask layer may include a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface.

[0007] According to embodiments of this disclosure, the accuracy of the position or dimensions of the deposited layer formed on the substrate can be improved.

[0008] This is a cross-sectional view showing an example of an organic device. This is a diagram showing an example of a deposition apparatus equipped with a mask device. This is a plan view showing an example of a mask device as seen from the incident surface. This is a plan view showing an example of a mask device as seen from the exit surface. This is a plan view showing an example of a mask. This is a plan view showing an enlarged portion of the mask shown in Figure 5A. This is a diagram showing a method for calculating the area of ​​the outer region. This is a cross-sectional view of the mask in Figure 5B along the line VI-VI. This is a cross-sectional view showing an example of the inner region of the substrate and the mask layer. This is a cross-sectional view showing an example of a mask layer. This is a cross-sectional view showing an example of a process for forming an intermediate layer. This is a cross-sectional view showing an example of a process for forming a first resist layer. This is a cross-sectional view showing an example of a process for forming a mask layer. This is a cross-sectional view showing an example of a process for forming a protective layer and a second resist layer. This is a cross-sectional view showing an example of a process for processing the substrate. This is a cross-sectional view showing an example of a process for removing a portion of the intermediate layer. This is a cross-sectional view showing an example of a process for removing the second resist layer and the protective layer. This is a cross-sectional view showing an example of an alignment process. This is a cross-sectional view showing an example of an alignment process. This is a cross-sectional view showing an example of an alignment process in a comparative form. This is a cross-sectional view showing an example of an alignment process in a comparative form. This is a cross-sectional view showing an example of a mask. This is a cross-sectional view showing an example of a mask. This is a cross-sectional view showing an example of a mask. This is a cross-sectional view showing an example of a mask. This is a plan view showing an example of a mask. This is a plan view showing an enlarged portion of the mask shown in Figure 25A. This is a plan view showing an example of a mask. This is a plan view showing an enlarged portion of the mask shown in Figure 25A. This is a schematic diagram showing an example of an outer region. This is a schematic diagram showing an example of an outer region. This is a schematic diagram showing an example of an outer region. This is a schematic diagram showing an example of an outer region. This is a plan view showing an example of a mask. This is a plan view showing an example of a mask. This is a plan view showing an example of a mask. This is a plan view showing an example of a mask.

[0009] In this specification and these drawings, unless otherwise specified, terms such as "substrate," "sheet," and "film," which refer to the material that forms the basis of a certain configuration, are not distinguished from one another solely on the basis of differences in name.

[0010] In this specification and these drawings, unless otherwise specified, terms that identify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," as well as values ​​of lengths and angles, should be interpreted not strictly, but to include a range in which similar functionality can be expected.

[0011] In this specification and these drawings, unless otherwise specified, when one component of a member or other structure is described as being "above," "below," "upper side," "lower side," or "upward" or "downward" of another component or other structure, this includes cases where one component is in direct contact with another. Furthermore, it also includes cases where another component is included between one component and another, i.e., cases where they are indirectly in contact. In addition, unless otherwise specified, the terms "above," "upper side," or "upward," or "below," "lower side," or "downward," may be used with the direction of up and down reversed.

[0012] In this specification, if multiple upper limit candidates and multiple lower limit candidates are given for a single parameter, the numerical range of that parameter may be constructed by combining any one upper limit candidate and any one lower limit candidate. For example, consider the case where it is stated that "Parameter B is, for example, A1 or greater, may be A2 or greater, or A3 or greater. Parameter B is, for example, A4 or less, may be A5 or less, or A6 or less." In this case, the numerical range of parameter B may be A1 or greater and A4 or less, A1 or greater and A5 or less, A1 or greater and A6 or less, A2 or greater and A4 or less, A2 or greater and A5 or less, A2 or greater and A6 or less, A3 or greater and A4 or less, A3 or greater and A5 or less, or A3 or greater and A6 or less.

[0013] In this specification and these drawings, unless otherwise specified, the state in which a face of element A "facing" a face of element B includes not only the case where a face of element A is in contact with a face of element B, but also the case where element C is located between the faces of element A and element B. In other words, the term "facing" is a term that describes the orientation of the two faces.

[0014] In this specification and these drawings, unless otherwise specified, identical or similarly functioning parts are denoted by the same or similar reference numerals, and repeated descriptions may be omitted. Furthermore, the dimensional ratios in the drawings may differ from the actual ratios for illustrative purposes, and some components may be omitted from the drawings.

[0015] Unless otherwise specified in this specification and these drawings, one embodiment described herein may be combined with other examples to the extent that it does not conflict with the original. Furthermore, other examples may be combined with each other to the extent that it does not conflict with the original.

[0016] In this specification and these drawings, unless otherwise specified, when disclosing two or more steps or processes relating to a method such as a manufacturing method, other steps or processes not disclosed may be performed between the disclosed steps or processes. Furthermore, the order of the disclosed steps or processes is arbitrary as long as it does not create a contradiction.

[0017] In one embodiment of this specification, an example is described in which a mask is used to form an organic layer or electrodes on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes for a device that displays or projects images or videos for representing virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes for display devices other than organic EL displays, such as electrodes for liquid crystal displays. Furthermore, the mask of this embodiment may be used to form components of devices other than display devices, such as electrodes for pressure sensors.

[0018] A first aspect of the present disclosure is a mask comprising: a substrate having a reference thickness and comprising silicon or a silicon compound, including a first surface and a second surface located opposite to the first surface; and a mask layer including a third surface facing the second surface and a fourth surface located opposite to the third surface, wherein the substrate includes an inner region and an outer region located outside the inner region in a plan view, the inner region including a plurality of first openings penetrating from the first surface to the second surface, a plurality of first struts located between the plurality of first openings and extending in a first direction, a plurality of second struts located between the plurality of first openings and extending in a second direction different from the first direction and intersecting the first struts, the outer region including a plurality of recesses, and the mask layer including a plurality of second openings overlapping the first openings in a plan view and penetrating from the third surface to the fourth surface.

[0019] A second aspect of the present disclosure may include the following features in the mask according to the first aspect described above: The plurality of recesses in the outer region may be located on the first surface.

[0020] A third aspect of the present disclosure is a mask according to the first aspect described above, which may include the following features: The plurality of recesses in the outer region may penetrate from the first surface to the second surface.

[0021] A fourth aspect of the present disclosure is a mask according to any one of the first to third aspects described above, which may include the following aspect: The substrate may include an outer edge region located outside the outer region in a plan view and having a thickness of 1 / 2 or more of the reference thickness.

[0022] A fifth aspect of the present disclosure is a mask according to any one of the first to fourth aspects described above, which may include the following aspects: The outer region may include a plurality of third ribs extending in a third direction different from the first and second directions, and the plurality of recesses may include a plurality of first recesses in contact with the first or second rib and the third rib.

[0023] A sixth aspect of the present disclosure is a mask according to the fifth aspect described above, which may include the following: At least some of the plurality of third struts may be connected to the region where the first struts and the second struts intersect in the inner region.

[0024] A seventh aspect of the present disclosure is a mask according to any one of the fifth to sixth aspects described above, which may include the following aspect: The plurality of recesses may include a plurality of second recesses that are in contact with the first and second ribs but not with the third rib.

[0025] An eighth aspect of the present disclosure is a mask according to any one of the fifth to seventh aspects described above, which may include the following aspect: The mask layer may include a portion that overlaps the third strut in a plan view.

[0026] A ninth aspect of the present disclosure is a mask according to any one of the fifth to eighth aspects described above, which may include the following aspect: The outer region may include a plurality of fourth struts that extend in a fourth direction different from the first, second, and third directions and intersect the third strut.

[0027] A tenth aspect of the present disclosure is a mask according to the ninth aspect described above, which may include the following: At least some of the plurality of fourth struts may be connected to the region where the first struts and second struts intersect in the inner region.

[0028] An eleventh aspect of the present disclosure is a mask according to any one of the ninth to tenth aspects described above, wherein the mask layer may include a portion that overlaps the fourth strut in a plan view.

[0029] A twelfth aspect of the present disclosure may include the following features in a mask according to any one of the first to eleventh aspects described above: The reference thickness may be 50 μm or more.

[0030] A thirteenth aspect of the present disclosure is a mask according to any one of the first to twelfth aspects described above, wherein the substrate may have a maximum dimension of 100 mm or more and 500 mm or less in a plan view.

[0031] A fourteenth aspect of the present disclosure is a mask apparatus comprising: a mask; a first frame connected to the mask and including a third opening; the mask comprising: a substrate comprising silicon or a silicon compound and having a reference thickness, including a first surface and a second surface located opposite to the first surface; a mask layer comprising a third surface facing the second surface and a fourth surface located opposite to the third surface; the substrate comprising: an inner region overlapping the third opening in a plan view; an outer region located outside the inner region in a plan view and at least partially overlapping the third opening; and an outer edge region located outside the outer region in a plan view and overlapping the first frame; the inner region comprising: a plurality of first openings penetrating from the first surface to the second surface; a plurality of first struts located between the plurality of first openings and extending in a first direction; a plurality of second struts located between the plurality of first openings and extending in a second direction different from the first direction and intersecting the first struts; the outer region comprising: a plurality of recesses; The mask layer is a masking device that includes a plurality of second openings that overlap the first opening in a plan view and penetrate from the third surface to the fourth surface.

[0032] A fifteenth aspect of the present disclosure is a mask device according to the fourteenth aspect described above, which may include the following features: The plurality of recesses in the outer region do not have to overlap the first frame in a plan view.

[0033] A sixteenth aspect of the present disclosure may include the following features in the mask device according to the fourteenth aspect described above: Some of the plurality of recesses in the outer region may overlap the first frame in a plan view.

[0034] A seventeenth aspect of the present disclosure is a deposition method using a mask device, comprising: an alignment step of adjusting the position of the mask device with respect to a substrate; and a deposition step of depositing a deposition material onto the substrate, wherein the mask device comprises: a mask; and a first frame connected to the mask and including a third opening, wherein the mask comprises: a substrate including a first surface and a second surface located opposite to the first surface, containing silicon or a silicon compound and having a reference thickness; and a mask layer including a third surface facing the second surface and a fourth surface located opposite to the third surface and facing the substrate, wherein the substrate includes: an inner region overlapping the third opening in a plan view; an outer region located outside the inner region and at least partially overlapping the third opening in a plan view; and an outer edge region located outside the outer region and overlapping the first frame in a plan view. The inner region includes a plurality of first openings penetrating from the first surface to the second surface, a plurality of first struts located between the plurality of first openings and extending in a first direction, and a plurality of second struts located between the plurality of first openings and extending in a second direction different from the first direction and intersecting the first struts; the outer region includes a plurality of recesses; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; and the alignment step is a deposition method comprising a step of drawing the inner region and the outer region of the substrate toward the substrate.

[0035] An eighteenth aspect of the present disclosure may include the following aspect of the deposition method according to the seventeenth aspect described above: In the alignment step, the inner region and the outer region of the substrate may be attracted to the substrate by a magnetic force acting on the portion of the mask layer that overlaps the inner region and the outer region in a plan view.

[0036] One embodiment of this disclosure will be described in detail with reference to the drawings. Note that the embodiments described below are examples of embodiments of this disclosure, and this disclosure is not to be construed as being limited to these embodiments only.

[0037] An organic device 100 comprising an organic layer formed by using a mask will be described. The organic device 100 comprises an organic layer or electrode formed by using a mask. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0038] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located opposite the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0039] The element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0040] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap the ends of the first electrodes 120. "Plan view" means viewing the object along the direction normal to the surface of a plate-like member such as a substrate 110.

[0041] The substrate 110 may be an insulating material. The material of the substrate 110 can be, for example, a material with poor flexibility such as silicon, quartz glass, Pyrex® glass, or synthetic quartz plate, or a flexible material such as a resin film, optical resin plate, or thin glass. The substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment that performs semiconductor manufacturing processes. For example, a first electrode 120, an insulating layer 160, etc., can be formed on the substrate 110 using equipment that performs semiconductor manufacturing processes.

[0042] Element 115 is configured to realize some function when a voltage is applied between the first electrode 120 and the second electrode 140, or when a current flows between the first electrode 120 and the second electrode 140. For example, when element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.

[0043] The first electrode 120 includes a material having conductivity. For example, the first electrode 120 includes a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may include a metal oxide having transparency and conductivity, such as indium tin oxide.

[0044] The organic layer 130 includes an organic material. When the organic layer 130 is energized, the organic layer 130 can exhibit some function. Energization means that a voltage is applied to the organic layer 130 or a current flows through the organic layer 130. As the organic layer 130, a light-emitting layer that emits light upon energization, a layer whose light transmittance or refractive index changes upon energization, etc. can be used. The organic layer 130 may include an organic semiconductor material.

[0045] As shown in FIG. 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0046] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is taken out to the outside from the second electrode 140 side or the first electrode 120 side.

[0047] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc.

[0048] The second electrode 140 may contain a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. As shown in Figure 1, the second electrode 140 may extend so as to overlap two adjacent organic layers 130 in a plan view.

[0049] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Figure 2 shows a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process in which a vapor deposition material is deposited onto the target object.

[0050] As shown in Figure 2, the deposition apparatus 10 may include a deposition source 6, a heater 8, and a mask 20 inside. The deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible. The deposition source 6 contains a deposition material 7, such as an organic material or a metallic material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere.

[0051] The mask 20 comprises at least an incident surface 201, an exit surface 202, a substrate 30, and a mask layer 45. The incident surface 201 faces the deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. The substrate 30 includes a plurality of first apertures 32. The mask layer 45 includes a plurality of second apertures 46. The first apertures 32 are located on the incident surface 201. The second apertures 46 are located on the exit surface 202. The first apertures 32 and the second apertures 46 are connected in the thickness direction of the mask 20. The plurality of second apertures 46 overlap one first aperture 32 in a plan view.

[0052] A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the first opening 32 and the second opening 46 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110. With respect to the mask 20, "plan view" means viewing the mask 20 along the direction normal to the first surface of the substrate 30. With respect to the mask device described later, "plan view" means viewing the mask device along the direction normal to the second surface of the frame of the first frame.

[0053] As shown in Figure 2, the deposition apparatus 10 may be equipped with a magnet 5 positioned on the second surface 112 side of the substrate 110. If the mask 20 contains a magnetic material, the magnet 5 can pull the mask 20 toward the substrate 110 by magnetic force. As a result, the gap between the mask 20 and the substrate 110 can be reduced or eliminated. Therefore, the occurrence of shadows in the deposition process can be suppressed. In this application, a shadow is a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 46 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 46. Shadows are caused by the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, etc.

[0054] The mask 20 may be supported by a first frame 60. The first frame 60 may be located on the incident surface 201 of the mask 20. The first frame 60 includes a first frame surface 601 and a second frame surface 602. A portion of the second frame surface 602 faces the incident surface 201 of the mask 20. The first frame surface 601 is located on the opposite side of the second frame surface 602.

[0055] The first frame 60 has a third opening 61 that penetrates from the first surface 601 of the frame to the second surface 602 of the frame. The single third opening 61 overlaps with the multiple first openings 32 in a plan view. The device comprising the mask 20 and the first frame 60 is also referred to as the mask device 15.

[0056] The first frame 60 includes an outer surface 603 and an inner surface 604. The inner surface 604 is the surface of the first frame 60 that faces the third opening 61. The outer surface 603 defines the outer edge of the first frame 60 in a plan view.

[0057] Next, the mask 20 and the mask device 15 will be described in detail. Figure 3 is a plan view showing an example of the mask device 15 as seen from the side of the incident surface 201. Figure 4 is a plan view showing an example of the mask device 15 as seen from the side of the exit surface 202. Figure 5A is a plan view showing an example of the mask 20. Figure 5B is a plan view showing an enlarged portion of the mask 20 shown in Figure 5A. Figure 6 is a cross-sectional view of the mask 20 in Figure 5B along the line VI-VI.

[0058] The base material 30 will now be described. The base material 30 contains silicon or a silicon compound. The silicon compound is, for example, glass such as quartz glass. The base material 30 is manufactured, for example, by processing a silicon wafer.

[0059] As shown in Figures 3 and 5A, the substrate 30 may include an outer edge 303 that includes a curved portion. A portion of the outer edge 303 may be in the shape of a circular arc. As shown in Figure 5A, the outer edge 303 may include a straight portion 304. The straight portion is also called an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also called a notch. The orientation flat and notch represent the crystal orientation of the silicon wafer.

[0060] The maximum dimension S11 of the base material 30 in a plan view is, for example, 100 mm or more, may be 150 mm or more, or 200 mm or more. The dimension S11 is, for example, 500 mm or less, may be 400 mm or less, or 300 mm or less.

[0061] As shown in Figure 6, the substrate 30 includes a first surface 301 and a second surface 302. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301 in the thickness direction T.

[0062] As shown in Figures 3 and 5A, the substrate 30 includes at least an inner region 31 and an outer region 36. The inner region 31 is the region of the substrate 30 that includes the center point C1 of the mask 20 in a plan view. The outer region 36 is the region of the substrate 30 that is located outside the inner region 31 in a plan view. "Outside in a plan view" means the direction away from the center point C1 in a plan view.

[0063] The base material 30 may include an outer edge region 41. The outer edge region 41 is a region of the base material 30 located outside the outer region 36 in a plan view. The outer edge region 41 extends along the outer edge 303 of the base material 30 in a plan view.

[0064] As shown in Figures 3 and 5A, the inner region 31 includes the plurality of first openings 32 described above. The first openings 32 penetrate the substrate 30 from the first surface 301 to the second surface 302. The plurality of first openings 32 may be aligned in the first direction D1 and the second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 are directions parallel to the first surface 301 of the substrate 30 of the mask 20. The thickness direction T described above is the normal direction of the first surface 301 and is perpendicular to the first direction D1 and the second direction D2.

[0065] A single first aperture 32 may correspond to a single device. For example, a single first aperture 32 may correspond to a single screen of an organic EL display device. A mask 20 containing multiple first apertures 32 can simultaneously form patterns of organic layers corresponding to multiple screens on the substrate 110. As shown in Figures 3 and 5A, each of the multiple first apertures 32 may have a rectangular outline in plan view.

[0066] As shown in Figure 6, the substrate 30 includes a first wall surface 321 facing the first opening 32. The first wall surface 321 may extend along the direction normal to the second surface 302.

[0067] The inner region 31 includes a plurality of struts extending along the planar direction of the base material 30. The contours of the plurality of first openings 32 in plan view are defined by the plurality of struts. As shown in Figures 3 and 5A, the plurality of struts of the inner region 31 include a plurality of first struts 33 and a plurality of second struts 34. Each of the plurality of first struts 33 extends in a first direction D1. Each of the plurality of second struts 34 extends in a second direction D2 and intersects with the first struts 33. The region of the base material 30 where the first struts 33 and the second struts 34 intersect is also called the first intersection region 35.

[0068] The base material 30 has a reference thickness T0. The reference thickness T0 is the distance in the thickness direction T between the first surface 301 and the second surface 302. The reference thickness T0 is measured at the center point C2 of the first intersection region 35 that is closest to the center point C1 of the mask 20 in a plan view.

[0069] The standard thickness T0 is, for example, 50 μm or more, but may be 100 μm or more, 200 μm or more, or 300 μm or more. The standard thickness T0 is, for example, 1000 μm or less, but may be 800 μm or less, or 600 μm or less.

[0070] Each of the multiple first openings 32 may be located between two adjacent first rails 33 in the second direction D2. Each of the multiple first openings 32 may be located between two adjacent second rails 34 in the first direction D1. In this embodiment, each of the multiple first openings 32 is located between two adjacent first rails 33 in the second direction D2 and between two adjacent second rails 34 in the first direction D1.

[0071] The outer region 36 includes a plurality of recesses 37. As shown in Figure 6, each of the plurality of recesses 37 may be a through hole penetrating from the first surface 301 to the second surface 302.

[0072] As described above, the inner region 31 includes a plurality of first openings 32. The plurality of first openings 32 reduce the rigidity of the inner region 31 in the thickness direction T. If the outer region 36 does not include recesses, the rigidity of the outer region 36 in the thickness direction T will be higher than the rigidity of the inner region 31 in the thickness direction T. By including a plurality of recesses 37 in the outer region 36, the difference between the rigidity of the outer region 36 and the rigidity of the inner region 31 in the thickness direction T can be reduced.

[0073] The base material 30 may include alignment marks 42. The alignment marks 42 may be located in the outer edge region 41. Although not shown in the figures, the alignment marks 42 may be located in the outer region 36 or in the inner region 31.

[0074] Alignment marks 42 are formed, for example, on the second surface 302. Alignment marks 42 may also be formed on the first surface 301. Alignment marks 42 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 is transparent to visible light or infrared light, the alignment marks 42 can be seen through the substrate 110.

[0075] The alignment mark 42 may have a circular outline in plan view. Although not shown in the illustration, the alignment mark 42 may have an outline other than a circle, such as a rectangle or a cross.

[0076] The shape of the alignment mark 42 in the cross-sectional view is arbitrary. For example, the alignment mark 42 may include a recess located on the first surface 301 or the second surface 302. The alignment mark 42 may include a hole penetrating from the first surface 301 to the second surface 302. The recess and hole may be formed by etching the first surface 301 or the second surface 302. The recess and hole may also be formed by irradiating the first surface 301 or the second surface 302 with a laser. For example, the alignment mark 42 may include a layer located on the first surface 301 or the second surface 302. The layer is formed of a material different from the substrate 30. The alignment mark 42 may be formed on a layer other than the substrate 30.

[0077] The configuration of the base material 30 in plan view will be described in detail with reference to Figure 5B. Figure 5B roughly corresponds to one part of the mask 20 which is divided into four equal parts along the circumferential direction of the outer edge 303. One part of the mask 20 which is divided into four equal parts along the circumferential direction of the outer edge 303 is also called a quadrant. The average values ​​of the dimensions, area, etc. of the components of the mask 20 are calculated by averaging the measured values ​​in one quadrant. For example, the width S31 of the first rail 33, which will be described later, is calculated by averaging the measured values ​​of the width S31 of multiple first rails 33 included in one quadrant.

[0078] The symbol S21 represents the distance between two adjacent first rails 33 in the second direction D2. Distance S21 corresponds to the dimension of the first opening 32 in the second direction D2. Distance S21 is measured at the midpoint of the first opening 32 in the first direction D1.

[0079] The symbol S22 represents the distance between two adjacent second bars 34 in the first direction D1. The distance S22 corresponds to the dimension of the first opening 32 in the first direction D1. The distance S22 is measured at the midpoint of the first opening 32 in the second direction D2.

[0080] Distances S21 and S22 are, for example, 5 mm or more, may be 10 mm or more, or 20 mm or more. Distances S21 and S22 are, for example, 100 mm or less, may be 50 mm or less, or 30 mm or less.

[0081] Distance S22 may be the same as distance S21, may be greater than distance S21, or may be less than distance S21.

[0082] The first rail 33 has a width S31. The width S31 is the dimension of the first rail 33 in a direction perpendicular to the first direction D1. The width S31 is measured at an intermediate position in the first direction D1 of the portion of the first rail 33 that is in contact with the first opening 32.

[0083] The second rail 34 has a width S32. The width S32 is the dimension of the second rail 34 in a direction perpendicular to the second direction D2. The width S32 is measured at an intermediate position in the second direction D2 of the portion of the second rail 34 that is in contact with the first opening 32.

[0084] Widths S31 and S32 are, for example, 0.1 mm or more, may be 0.5 mm or more, or 1.0 mm or more. Widths S31 and S32 are, for example, 20 mm or less, may be 15 mm or less, or 10 mm or less.

[0085] The width S32 may be the same as the width S31, may be larger than the width S31, or may be smaller than the width S31.

[0086] As shown in Figure 5B, the multiple first rails 33 may extend in a first direction D1 from the inner region 31 through the outer region 36 to the outer edge region 41 or outer edge 303. In other words, the outer region 36 may include multiple first rails 33 that extend continuously from the inner region 31. In this case, the outer region 36 may include one or more recesses 37 having contours tangent to the first rails 33. Each of the one or more recesses 37 of the outer region 36 may overlap the first opening 32 of the inner region 31 when viewed along the first direction D1.

[0087] As shown in Figure 5B, the multiple second ribs 34 may extend in the second direction D2 from the inner region 31 through the outer region 36 to the outer edge region 41 or outer edge 303. In other words, the outer region 36 may include multiple second ribs 34 that extend continuously from the inner region 31. In this case, the outer region 36 may include one or more recesses 37 having contours tangent to the second ribs 34. Each of the one or more recesses 37 of the outer region 36 may overlap the first opening 32 of the inner region 31 when viewed along the second direction D2.

[0088] Incidentally, the rigidity of the outer region 36 including the multiple recesses 37 is lower than that of a conventional outer region 36 that does not include the recesses. If the outer region 36 deforms in the in-plane direction of the base material 30, it is conceivable that the positional accuracy of the multiple first openings 32 in the inner region 31 will decrease. Considering this problem, the outer region 36 may include a plurality of struts that are in contact with the recesses 37 in a plan view. For example, the outer region 36 may include a plurality of third struts 38 extending in a third direction D3. The third direction D3 is an in-plane direction of the base material 30 and is different from the first direction D1 and the second direction D2. The third direction D3 is inclined at a predetermined angle (first inclination angle) θ1 with respect to the first direction D1.

[0089] The first inclination angle θ1 is, for example, 10° or more, may be 20° or more, or 30° or more. The first inclination angle θ1 is, for example, 80° or less, may be 70° or less, or 60° or less.

[0090] The multiple third supports 38 of the outer region 36 can suppress movement of the inner region 31 in the first direction D1 and the second direction D2. According to this embodiment, the positional accuracy of the multiple first openings 32 of the inner region 31 can be maintained while reducing the rigidity of the outer region 36.

[0091] The third rail 38 has a width S33. The width S33 is the dimension of the third rail 38 in a direction perpendicular to the third direction D3. The width S33 is measured at an intermediate position in the third direction D3 of the portion of the third rail 38 that is in contact with the recess 37.

[0092] The width S33 is, for example, 0.1 mm or more, may be 0.5 mm or more, or 1.0 mm or more. The width S33 is, for example, 20 mm or less, may be 15 mm or less, or 10 mm or less.

[0093] The width S33 may be the same as the width S31, may be larger than the width S31, or may be smaller than the width S31.

[0094] Each of the multiple third rails 38 includes two ends connected to other rails or the outer edge region 41. The two ends are an inner end 381 and an outer end 382. The distance from the inner end 381 to the center point C1 is less than or equal to the distance from the outer end 382 to the center point C1.

[0095] At least a portion of the inner ends 381 of the multiple third bars 38 may be connected to the first intersecting region 35 of the inner region 31. As a result, movement of the inner region 31 in the first direction D1 and the second direction D2 is effectively suppressed. Although not shown in the figures, at least a portion of the inner ends 381 of the multiple third bars 38 may be connected to the first bar 33 or to the second bar 34.

[0096] At least a portion of the outer ends 382 of the multiple third ribs 38 may be connected to the first cross region 35. At least a portion of the outer ends 382 of the multiple third ribs 38 may be connected to the outer edge region 41. Although not shown, at least a portion of the outer ends 382 of the multiple third ribs 38 may be connected to the first rib 33 or to the second rib 34.

[0097] At least some of the multiple third struts 38 may include an inner end 381 connected to one first intersecting region 35 and an outer end 382 connected to another first intersecting region 35. At least some of the multiple third struts 38 may include an inner end 381 connected to one first intersecting region 35 and an outer end 382 connected to an outer edge region 41.

[0098] Among the multiple recesses 37, the recess 37 that is in contact with the first rib 33 or the second rib 34 and also in contact with the rib of the outer region 36, such as the third rib 38 or the fourth rib described later, is also called the first recess 371. In the example shown in Figure 5B, the outer region 36 includes multiple first recesses 371 that are in contact with the first rib 33 or the second rib 34 and also in contact with the third rib 38.

[0099] Among the multiple recesses 37, a recess 37 that is in contact with the first rib 33 or the second rib 34, but not with the rib of the outer region 36, such as the third rib 38 or the fourth rib described later, is also called a second recess 372. In the example shown in Figure 5B, the outer region 36 includes a plurality of second recesses 372 that are in contact with the first rib 33 or the second rib 34, but not with the third rib 38. The second recesses 372 may be in contact with the outer edge region 41.

[0100] The outer region 36 may include a group of multiple first recesses 371 located between two adjacent first rafters 33 in the second direction D2 and between two adjacent second rafters 34 in the first direction D1. Such a group of multiple first recesses 371 is also referred to as an equivalent recess 375. The distance in the second direction D2 between two first rafters 33 that are in contact with the equivalent recess 375 is the distance S21 described above, as in the case of the inner region 31. The distance in the first direction D1 between two second rafters 34 that are in contact with the equivalent recess 375 is the distance S22 described above, as in the case of the inner region 31.

[0101] In the example shown in Figure 5B, the equivalent recess 375 is composed of two first recesses 371 having a triangular contour in plan view. The two first recesses 371 of the equivalent recess 375 are separated by a third rib 38.

[0102] The area of ​​each of the multiple recesses 37 in a plan view may be smaller than the area of ​​one first opening 32. The ratio of the average value of the areas of the multiple recesses 37 to the area of ​​one first opening 32 is, for example, 0.20 or more, may be 0.35 or more, or may be 0.50 or more. The ratio of the average value of the areas of the multiple recesses 37 to the area of ​​one first opening 32 is, for example, 0.90 or less, may be 0.80 or less, or may be 0.70 or less. The area of ​​the first opening 32 is measured at the first opening 32 closest to the center point C1.

[0103] The ratio of the sum of the areas of the multiple recesses 37 located in the outer region 36 to the area of ​​the outer region 36 in a plan view is called the recess area ratio. The recess area ratio is calculated for one quarter circle portion.

[0104] Figure 5C shows a method for calculating the area of ​​the outer region 36 in a plan view. The area of ​​the outer region 36 is the area of ​​the substrate 30 located between the first boundary line BL1 and the second boundary line BL2. In Figure 5C, the first boundary line BL1 and the second boundary line BL2 are shown as dotted lines.

[0105] The first boundary line BL1 represents the boundary between the inner region 31 and the outer region 36. As shown in Figure 5C, the first boundary line BL1 passes outward from the contours of the multiple first openings 32 that are close to the outer region 36 in a plan view by a distance equal to the width S31 of the first rail 33 or the width S34 of the second rail 34.

[0106] The second boundary line BL2 represents the boundary between the outer region 36 and the outer edge region 41. If the contours of the multiple recesses 37 each include a portion that extends along the outer edge 303, the second boundary line BL2 passes through the portion of the contours of the multiple recesses 37 that extends along the outer edge 303. If the contours of the multiple recesses 37 that are close to the outer edge 303 in a plan view do not include a portion that extends along the outer edge 303, the second boundary line BL2 is determined based on the first frame 60. Specifically, the second boundary line BL2 passes through a position that overlaps with the inner surface 604 of the first frame 60 in a plan view.

[0107] The ratio of recessed areas is, for example, 0.10 or more, may be 0.30 or more, or 0.50 or more. The ratio of recessed areas is, for example, 1.00 or less, may be 0.90 or less, may be 0.80 or less, or may be 0.70 or less.

[0108] As shown in Figure 6, the struts, such as the third strut 38 of the outer region 36, have a thickness T11. The thickness T11 is 1 / 2 or more of the reference thickness T0. The ratio of the thickness T11 to the reference thickness T0, T11 / T0, is, for example, 0.55 or more, and may be 0.60 or more, or 0.70 or more. T11 / T0 is, for example, 1.00 or less, and may be 0.90 or less, or 0.80 or less.

[0109] As shown in Figure 6, the outer edge region 41 has a thickness T12. The thickness T12 is 1 / 2 or more of the reference thickness T0. The ratio of the thickness T12 to the reference thickness T0, T12 / T0, is, for example, 0.50 or more, may be 0.70 or more, may be 0.90 or more, or may be 1.10 or more. T12 / T0 is, for example, 10.0 or less, may be 5.00 or less, or may be 2.00 or less.

[0110] The mask layer 45 will now be described. As shown in Figure 6, the mask layer 45 includes a third surface 451 and a fourth surface 452. The third surface 451 faces the second surface 302 or the first opening 32 of the substrate 30. The fourth surface 452 is located on the opposite side of the third surface 451 in the thickness direction T. The fourth surface 452 may constitute the exit surface 202 of the mask 20.

[0111] The mask layer 45 includes portions that overlap the multiple first openings 32 of the substrate 30 in a plan view. As shown in Figure 4, the portions of the mask layer 45 that overlap the multiple first openings 32 may be a single continuous layer. Although not shown, the portions of the mask layer 45 that overlap the multiple first openings 32 may be separated from each other.

[0112] In a plan view, each portion of the mask layer 45 that overlaps the first aperture 32 of the substrate 30 contains a plurality of second apertures 46. Each of the plurality of second apertures 46 penetrates from the third surface 451 to the fourth surface 452. One second aperture 46 corresponds to one vapor-deposited layer. The vapor-deposited layer is, for example, an organic layer 130. A group of regularly arranged second apertures 46 corresponds to one screen of an organic EL display device. A group of regularly arranged second apertures 46 may overlap one first aperture 32 in a plan view.

[0113] As shown in Figures 4 and 6, the mask layer 45 may include portions that overlap with the first and second struts 33 and 34 in the inner region 31 of the base material 30 in a plan view. The mask layer 45 may include portions that overlap with the third and third struts 38 in the outer region 36 of the base material 30 in a plan view. The mask layer 45 may include portions that overlap with the recesses 37 in the outer region 36 of the base material 30 in a plan view. The mask layer 45 may include portions that overlap with the outer edge region 41 of the base material 30 in a plan view.

[0114] The intermediate layer 50 will now be described. The intermediate layer 50 is a layer located between the second surface 302 of the base material 30 and the third surface 451 of the mask layer 45 in the thickness direction of the mask 20. In a plan view, the intermediate layer 50 is positioned to overlap with the struts, such as the first strut 33 and the second strut 34, in the inner region 31 of the base material 30. In a plan view, the intermediate layer 50 may be positioned to overlap with the struts, such as the third strut 38, in the outer region 36 of the base material 30. In a plan view, the intermediate layer 50 may be positioned to overlap with the outer edge region 41 of the base material 30. Although not shown in the figures, a portion of the intermediate layer 50 may be positioned to overlap with the first opening 32 of the base material 30.

[0115] Figure 7 is a cross-sectional view showing an example of the inner region 31 of the substrate 30, the mask layer 45, and the intermediate layer 50. The intermediate layer 50 includes a layer that performs some function for the substrate 30 or the mask layer 45. For example, the intermediate layer 50 may include a stopper layer that stops etching in the process of processing the substrate 30 by etching. The stopper layer has resistance to etchants that etch the substrate 30. The stopper layer may include nickel, copper, titanium, aluminum, iron, or alloys thereof. For example, the stopper layer may include an iron alloy containing nickel. An example of an iron alloy containing nickel is permalloy. Permalloy is an iron alloy containing 35% to 80% by weight of nickel. The stopper layer may also include an inorganic compound such as silicon oxide. The stopper layer can suppress the etching of the mask layer 45 in the process of processing the substrate 30.

[0116] The intermediate layer 50 may include an adhesion layer to improve adhesion between the substrate 30 and the mask layer 45. The adhesion layer may contain titanium. The adhesion layer may contain titanium compounds such as titanium nitride. The intermediate layer 50 may include a stopper layer and an adhesion layer.

[0117] The thickness T3 of the intermediate layer 50 is, for example, 0.01 μm or more, may be 0.03 μm or more, or 0.05 μm or more. The thickness T3 of the intermediate layer 50 is, for example, 10 μm or less, may be 1.0 μm or less, or 0.10 μm or less.

[0118] The intermediate layer 50 may be positioned so as not to overlap the second opening 46 of the mask layer 45 in a plan view. In this case, the occurrence of shadows caused by the intermediate layer 50 is suppressed. The intermediate layer 50 may be positioned so as not to overlap the first opening 32 of the substrate 30 in a plan view. Although not shown in the figures, the intermediate layer 50 may include a portion that overlaps the first opening 32 of the substrate 30 in a plan view.

[0119] The mask layer 45 includes a second wall surface 461 facing the second opening 46. The symbol S6 represents the distance in the planar direction of the substrate 30 between the second wall surface 461 of the mask layer 45 and the first wall surface 321 of the substrate 30. The distance S6 is, for example, 1.0 μm or more, may be 10.0 μm or more, or 50.0 μm or more. The distance S6 is, for example, 1000 μm or less, may be 300 μm or less, or 100 μm or less.

[0120] Figure 8 is a cross-sectional view showing an example of the portion of the mask layer 45 that overlaps the first aperture 32 in a plan view. Reference numeral R1 represents the dimension of the second aperture 46 on the third surface 451. Reference numeral R2 represents the dimension of the second aperture 46 on the fourth surface 452. Dimension R1 is also referred to as the first dimension. Dimension R2 is also referred to as the second dimension. The dimensions of the vapor-deposited layer formed on the substrate 110 by the vapor deposition process using the mask 20 are determined according to the second dimension R2.

[0121] The first dimension R1 may be larger than the second dimension R2. In other words, the second dimension R2 may be smaller than the first dimension R1. As a result, shadowing in the vicinity of the second wall surface 461 is suppressed. The first dimension R1 and the second dimension R2 are determined in the direction in which the multiple second openings 46 are aligned.

[0122] As shown in Figure 8, the second wall surface 461 may include a tapered surface 461a that widens away from the center of the second opening 46 as it moves from the fourth surface 452 toward the third surface 451. By including the tapered surface 461a in the second wall surface 461, dimension R1 can be made larger than dimension R2.

[0123] In Figure 8, the reference numeral S8 represents the width of the tapered surface 461a in the direction in which the second openings 46 are aligned. The width S8 is, for example, 0.2 μm or more, may be 0.5 μm or more, or may be 1.0 μm or more. The width S8 is, for example, 25 μm or less, may be 20 μm or less, or may be 10 μm or less.

[0124] In Figure 8, the symbol φ1 represents the angle formed by the second wall surface 461 and the fourth surface 452. The angle φ1 is, for example, 50° or more, may be 55° or more, or 60° or more. The angle φ1 is, for example, less than 90°, may be 85° or less, or 80° or less.

[0125] The thickness T2 of the mask layer 45 is smaller than the standard thickness T0 of the substrate 30. The thickness T2 is, for example, 25.0 μm or less, may be 10.0 μm or less, or 5.0 μm or less. The smaller the thickness T2, the more the occurrence of shadows is suppressed. The thickness T2 is, for example, 0.5 μm or more, may be 1.0 μm or more, or 2.0 μm or more. The larger the thickness T2, the more the occurrence of defects such as pinholes and deformations in the mask layer 45 is suppressed.

[0126] The spacing S5 between the two second wall surfaces 461 in the direction in which the second openings 46 are aligned is, for example, 1.0 μm or more, may be 2.0 μm or more, or 3.0 μm or more. The spacing S5 is, for example, 25.0 μm or less, may be 10.0 μm or less, or 5.0 μm or less.

[0127] The mask layer 45 may contain a resin material. For example, the mask layer 45 may contain a resin layer made of a resin material. The mask layer 45 may consist solely of a resin layer. The mask layer 45 may contain an insulating inorganic material. For example, the mask layer 45 may contain an inorganic layer made of an insulating inorganic material. The inorganic material is, for example, a silicon compound such as silicon oxide or silicon nitride.

[0128] The mask layer 45 may contain a metallic material. For example, the mask layer 45 may contain a metallic layer made of a metallic material. The mask layer 45 may also consist solely of a metallic layer.

[0129] The mask layer 45 may include multiple layers such as a resin layer, an inorganic layer, and a metal layer, which are stacked in the thickness direction T.

[0130] The mask layer 45 may include layers of different materials depending on their position in the planar direction of the mask 20. For example, the layer configuration of the portion of the mask layer 45 that overlaps the first opening 32 in a plan view may be different from the layer configuration of the portion of the mask layer 45 that overlaps the struts such as the first strut 33 and the second strut 34 in a plan view. For example, the portion of the mask layer 45 that overlaps the first opening 32 in a plan view may include a metal layer. For example, the portion of the mask layer 45 that overlaps the struts such as the first strut 33 and the second strut 34 in a plan view may include an inorganic layer and a metal layer laminated on the inorganic layer in the thickness direction T.

[0131] The metallic material of the mask layer 45 may include a magnetic material or a non-magnetic material. Examples of magnetic materials include nickel, iron, cobalt, and alloys thereof. Examples of non-magnetic materials include copper, aluminum, titanium, chromium, and alloys thereof.

[0132] The mask layer 45 may include a seed layer. The seed layer is a layer that carries charge to the plating solution when forming a metal layer by electroplating. The seed layer may contain a metal. Examples of metals include nickel, copper, titanium, aluminum, and alloys thereof. The seed layer may consist of one layer or multiple layers.

[0133] The thickness of the seed layer is, for example, 2.0 nm or more, may be 10.0 nm or more, or 30.0 nm or more. The thickness of the seed layer is, for example, 5.0 μm or less, may be 1.0 μm or less, or 150 nm or less.

[0134] The thickness of each layer, the dimensions of each component, and the spacing are measured by observing an image of the mask 20 using a scanning electron microscope.

[0135] Figure 9 is a cross-sectional view showing an example of a mask device 15. The mask device 15 comprises a mask 20 and a first frame 60.

[0136] The first frame 60 will now be described. The first frame 60 is a component connected to the mask 20 for the purpose of gripping the mask 20 when handling it, for example, when moving the mask 20. By connecting the first frame 60 to the mask 20, the handling of the mask 20 becomes easier.

[0137] As shown in Figure 9, the first frame 60 is connected to the outer edge region 41 of the base material 30. For example, the second frame surface 602 of the first frame 60 may be connected to the first surface 301 of the outer edge region 41 of the base material 30. An adhesive layer may be placed between the first surface 301 of the outer edge region 41 and the second frame surface 602 of the first frame 60. That is, the first frame 60 may be connected to the base material 30 via an adhesive layer.

[0138] In a plan view, the first frame 60 does not overlap with the first opening 32 of the base material 30. Also in a plan view, at least a portion of the first frame 60 extends outside the outer edge 303 of the base material 30. The first frame 60 expands the area for gripping when handling the mask 20. The first frame 60 may include a region that extends circumferentially outside the outer edge 303 of the base material 30 in a plan view. The first frame 60 may include an outer surface 603 that surrounds the outer edge 303 of the base material 30 in a plan view.

[0139] Although not shown in the diagram, the first frame 60 may overlap a portion of the outer region 36 of the base material 30 in a plan view. For example, the first frame 60 may overlap a portion of the recess 37 of the outer region 36 of the base material 30.

[0140] The first frame 60 may contain glass or metal materials. Glass materials include quartz glass, borosilicate glass, alkali-free glass, soda glass, etc. Metal materials include Invar, SUS430, SUS304, and other stainless steels. By including these materials in the first frame 60, the rigidity of the first frame 60 can be made higher than that of the base material 30. The material of the first frame 60 may be determined to ensure that the first frame 60 has the necessary rigidity, taking into consideration the gripping force of the operator or robot hand handling the mask device 15.

[0141] A method for manufacturing the mask 20 will now be described. First, a substrate 30 is prepared. A silicon wafer may be used as the substrate 30. The first surface 301 and the second surface 302 of the substrate 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientations of the first surface 301 and the second surface 302 may be (100) and (110), etc.

[0142] Next, as shown in Figure 10, an intermediate layer 50 is formed on the second surface 302 of the substrate 30. The intermediate layer 50 may be formed over the entire second surface 302. The intermediate layer 50 may be formed by a physical film deposition method such as sputtering, vapor deposition, or ion plating.

[0143] Next, a step of forming a first resist layer 55 on the intermediate layer 50 is carried out. For example, a dry film resist may be attached to the intermediate layer 50. For example, a solution containing a resist material may be applied to the intermediate layer 50. The first resist layer 55 may contain a positive-type resist material or a negative-type resist material. If the first resist layer 55 contains an inorganic compound such as silicon oxide, the first resist layer 55 may be formed by a vapor phase growth method such as CVD. Next, a step of processing the first resist layer 55 is carried out. Figure 11 is a cross-sectional view showing the processed first resist layer 55. The first resist layer 55 includes a plurality of island portions 573.

[0144] The method for processing the first resist layer 55 is not particularly limited. For example, if the first resist layer 55 is photosensitive, the first resist layer 55 may be processed by exposure and development. For example, if the first resist layer 55 contains a silicon compound, the first resist layer 55 may be processed by dry etching using an etching gas. Dry etching may be reactive ion etching.

[0145] Next, a step of forming a mask layer 45 is carried out. The mask layer 45 is formed in the gaps 574 between the multiple island portions 573 of the first resist layer 55. The mask layer 45 is also formed on the outside of the multiple island portions 573. The mask layer 45 may also be formed by a plating step. In the plating step, a plating solution containing ions of the metal constituting the mask layer 45 is supplied to the gaps 574 of the first resist layer 55. The plating step may be an electrolytic plating step or an electroless plating step. If an electrolytic plating step is carried out, a seed layer may be formed on the intermediate layer 50. Alternatively, the intermediate layer 50 may function as a seed layer.

[0146] Next, the process of removing the first resist layer 55 is carried out. Figure 12 is a cross-sectional view showing an example of the mask layer 45 after the first resist layer 55 has been removed. The portion where the first resist layer 55 was located constitutes the second opening 46 of the mask layer 45.

[0147] Next, a substrate processing step is carried out to process the substrate 30. In the substrate processing step, a plurality of first openings 32 and a plurality of recesses 37 are formed in the substrate 30.

[0148] In the substrate processing step, as shown in Figure 13, a second resist layer 72 may be formed on a portion of the first surface 301 of the substrate 30. As shown in Figure 13, a protective layer 75 may be formed to cover the mask layer 45.

[0149] The second resist layer 72 may be a photoresist. In this case, first, the second resist layer 72 is formed on the first surface 301 by coating it with a liquid resist material. After coating, a step of heating the second resist layer 72 may be performed. Subsequently, a photolithography process is performed to expose and develop the second resist layer 72. As a result, the second resist layer 72 is formed on the parts of the first surface 301 corresponding to the ribs of the inner region 31, the ribs of the outer region 36, and the outer edge region 41.

[0150] The second resist layer 72 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301. The silicon oxide film may be formed on the substrate 30 before the intermediate layer 50 is laminated onto the substrate 30.

[0151] Next, as shown in Figure 14, the first surface 301 of the substrate 30 is etched. By etching the portion of the substrate 30 that is not covered by the second resist layer 72, a plurality of first openings 32 and a plurality of recesses 37 are formed on the first surface 301. The etching may also be dry etching using an etching gas.

[0152] If the intermediate layer 50 has resistance to etchant, etching is suppressed from progressing to the mask layer 45, as shown in Figure 14. The etching gas is, for example, SF ６ It is a gas.

[0153] Next, as shown in Figure 15, an intermediate layer removal process is performed to remove a portion of the intermediate layer 50. The intermediate layer removal process is carried out by supplying an etchant for the intermediate layer 50 to the first opening 32 and the recess 37. In a plan view, the intermediate layer 50 that overlaps the first opening 32 and the recess 37 is removed. The removal of the intermediate layer 50 may be carried out by dry etching using an etching gas. Dry etching may also be performed by reactive ion etching.

[0154] Next, the process of removing the second resist layer 72 and the protective layer 75 is carried out. As a result, the mask 20 is obtained. The order of these steps is not particularly limited. Figure 16 is a cross-sectional view showing the mask 20 after the second resist layer 72 and the protective layer 75 have been removed.

[0155] Next, a connection process is performed to connect the mask 20 to the first frame 60. As a result, the mask device 15 is obtained.

[0156] A deposition method for forming multiple deposition layers on a substrate 110 using a mask 20 will be described. The deposition method comprises an alignment step and a deposition step.

[0157] In the alignment process, the position of the mask 20 relative to the substrate 110 is adjusted. The position of the mask 20 relative to the substrate 110 may be calculated based on a plurality of alignment marks 42 on the mask 20. Figure 17 is a cross-sectional view showing an example of a state in which the position of the mask 20 in the planar direction has been adjusted.

[0158] As shown in Figure 17, the base material 30 of the mask 20 may have some deflection due to its own weight or the like. The amount of deflection may be greater as it approaches the center point of the mask 20 in a plan view.

[0159] As shown in Figure 18, the alignment process may include bringing the magnet 5 closer to the substrate 110 or bringing the magnet 5 into contact with the substrate 110. If the components of the mask 20 include magnetic material, the mask 20 is attracted to the substrate 110 by magnetic force. For example, if the mask layer 45 includes magnetic material, the magnetic force acting on the mask layer 45 that overlaps the inner region 31 and the outer region 36 attracts the inner region 31 and the outer region 36 to the substrate 110.

[0160] The magnetic force that pulls the base material 30 toward the substrate 110 may occur earlier for the portion of the base material 30 closer to the center point of the mask 20 in a plan view. For example, the inner region 31 may be pulled toward the substrate 110 before the outer region 36. For example, the portion of the mask 20's exit surface 202 that overlaps the inner region 31 in a plan view may be pulled toward the first surface 111 of the substrate 110. Subsequently, the outer region 36 may be pulled toward the substrate 110. For example, the portion of the mask 20's exit surface 202 that overlaps the outer region 36 in a plan view may be pulled toward the first surface 111 of the substrate 110.

[0161] In this embodiment, the outer region 36 of the substrate 30 includes a plurality of recesses 37. As a result, the rigidity of the outer region 36 in the thickness direction T is reduced compared to the case where the outer region 36 does not include recesses. Therefore, the occurrence of a gap between the portion of the exit surface 202 of the mask 20 that overlaps the outer region 36 in a plan view and the first surface 111 of the substrate 110 is suppressed.

[0162] Figures 19 and 20 show an example of an alignment process for adjusting the position of the comparative mask 20 relative to the substrate 110. The comparative mask 20 differs from the mask 20 of this embodiment in that the outer region 36 does not include a recess.

[0163] In the comparative configuration, as shown in Figure 20, the mask 20 is attracted to the substrate 110 by magnetic force. For example, first, the portion of the mask 20's output surface 202 that overlaps the inner region 31 in a plan view is attracted to the first surface 111 of the substrate 110. Then, the portion of the mask 20's output surface 202 that overlaps the outer region 36 in a plan view is attracted to the first surface 111 of the substrate 110.

[0164] Because there is a time lag in the pulling motion, it is conceivable that the portion of the mask 20's exit surface 202 that overlaps the outer region 36 may not be uniformly pulled towards the first surface 111 of the substrate 110. For example, as shown in Figure 20, it is conceivable that a partial gap 202G may occur between the portion of the mask 20's exit surface 202 that overlaps the outer region 36 and the first surface 111 of the substrate 110. When a gap 202G occurs, an uneven portion occurs on the surface of the outer region 36. As a result, for example, the positional accuracy of the first opening 32 adjacent to the outer region 36 in the first direction D1 or the second direction D2 decreases.

[0165] On the other hand, in this embodiment, the outer region 36 of the substrate 30 includes a plurality of recesses 37. As a result, the rigidity of the outer region 36 in the thickness direction T is reduced. Therefore, even if there is a time difference in the pulling motion, the occurrence of non-flat portions on the surface of the outer region 36 is suppressed. In addition, the occurrence of a gap between the portion of the exit surface 202 of the mask 20 that overlaps the outer region 36 and the first surface 111 of the substrate 110 is suppressed. Therefore, compared to the comparative embodiment, the positional accuracy of the first opening 32 adjacent to the outer region 36 in the first direction D1 or the second direction D2 is improved. As a result, the accuracy of the position or dimensions of the vapor-deposited layer formed on the substrate 110 is improved.

[0166] When the outer region 36 of the base material 30 includes multiple third struts 38 or other struts that are in contact with the recess 37, deformation of the outer region 36 in the first direction D1 and the second direction D2 is suppressed. As a result, movement of the inner region 31 in the first direction D1 and the second direction D2 is suppressed. Therefore, the struts of the outer region 36, such as the third struts 38, can also contribute to improving the positional accuracy of the first opening 32 in the first direction D1 or the second direction D2.

[0167] The above-described embodiment can be modified in various ways. Hereinafter, modifications will be described with reference to the drawings as necessary. In the following description and the drawings used therein, parts that can be configured similarly to the above-described embodiment will be given the same reference numerals as those used for the corresponding parts in the above-described embodiment. Duplicate explanations will be omitted. Furthermore, if it is clear that the effects and advantages obtained in the above-described embodiment can also be obtained in the modifications, the explanation may be omitted.

[0168] Figure 21 is a cross-sectional view showing an example of the mask 20. The mask layer 45 does not necessarily have to overlap the recess 37 of the outer region 36 in a plan view. The mask layer 45 may include portions that overlap the third strut 38 or other struts of the outer region 36 in a plan view. In other words, portions of the mask layer 45 that overlap the third strut 38 or other struts of the outer region 36 may include through holes that overlap the recess 37 in a plan view.

[0169] Figure 22 is a cross-sectional view showing an example of the mask 20. The recess 37 in the outer region 36 does not have to penetrate the base material 30. The recess 37 may be located on the first surface 301. Although not shown, the recess 37 may be located on the second surface 302.

[0170] The symbol T13 represents the thickness of the outer region 36 that overlaps the recess 37 in a plan view. The thickness T13 is less than half of the reference thickness T0. The ratio of the thickness T13 to the reference thickness T0, T13 / T0, is, for example, 0.05 or more, may be 0.10 or more, or 0.15 or more. The ratio T15 / T0 is, for example, 0.45 or less, may be 0.30 or less, or 0.20 or less.

[0171] In the example shown in Figure 22, the rigidity of the outer region 36 in the thickness direction T is reduced by the multiple recesses 37. As a result, the difference between the rigidity of the outer region 36 and the rigidity of the inner region 31 in the thickness direction T can be reduced. Therefore, in the alignment process described above, the occurrence of a gap between the exit surface 202 of the mask 20 that overlaps the outer region 36 in a plan view and the first surface 111 of the substrate 110 is suppressed.

[0172] Figure 23 is a cross-sectional view showing an example of the mask 20. The struts of the outer region 36 of the base material 30 may include portions that do not overlap the mask layer 45 in a plan view. In other words, the mask layer 45 does not have to overlap the outer region 36 in a plan view.

[0173] Figure 24 is a cross-sectional view showing an example of the mask 20. The struts of the inner region 31 of the base material 30 may include portions that do not overlap with the mask layer 45 in a plan view.

[0174] Figure 25A is a plan view showing an example of the mask 20. The outer region 36 of the base material 30 may include a plurality of third struts 38 extending in the third direction D3, as well as a plurality of fourth struts 39 extending in the fourth direction D4. The fourth direction D4 is an in-plane direction of the base material 30 and is different from the first direction D1, the second direction D2, and the third direction D3. The fourth direction D4 is inclined at a predetermined angle (second inclination angle) θ2 with respect to the first direction D1. The plurality of third struts 38 and the plurality of fourth struts 39 are arranged such that the direction in which each extends is toward the inner region 31 in a plan view.

[0175] The second inclination angle θ2 is, for example, 10° or more, may be 20° or more, or may be 30° or more. The second inclination angle θ2 is, for example, 80° or less, may be 70° or less, or may be 60° or less.

[0176] The multiple fourth supports 39 of the outer region 36, like the multiple third supports 38, can suppress movement of the inner region 31 in the first direction D1 and the second direction D2. Therefore, the positional accuracy of the multiple first openings 32 of the inner region 31 can be maintained while reducing the rigidity of the outer region 36.

[0177] Figure 25B is a plan view showing an enlarged portion of the mask 20 shown in Figure 25A. The fourth rib 39 has a width S34. The width S34 is the dimension of the fourth rib 39 in a direction perpendicular to the fourth direction D4. The width S34 is measured at the midpoint in the fourth direction D4 of the portion of the fourth rib 39 that is in contact with the recess 37.

[0178] The width S34 is, for example, 0.1 mm or more, may be 0.5 mm or more, or may be 1.0 mm or more. The width S34 is, for example, 20 mm or less, may be 15 mm or less, or may be 10 mm or less.

[0179] The width S34 may be the same as the width S31, may be larger than the width S31, or may be smaller than the width S31.

[0180] Each of the multiple fourth rails 39 includes two ends connected to other rails or the outer edge region 41. The two ends are an inner end 391 and an outer end 392. The distance from the inner end 391 to the center point C1 is less than or equal to the distance from the outer end 392 to the center point C1.

[0181] At least a portion of the inner ends 391 of the multiple fourth bars 39 may be connected to the first crossing region 35 of the inner region 31. As a result, movement of the inner region 31 in the first direction D1 and the second direction D2 is effectively suppressed. Although not shown in the figures, at least a portion of the inner ends 391 of the multiple fourth bars 39 may be connected to the first bar 33 or to the second bar 34.

[0182] At least a portion of the outer ends 392 of the multiple fourth ribs 39 may be connected to the first cross region 35. At least a portion of the outer ends 392 of the multiple fourth ribs 39 may be connected to the outer edge region 41. Although not shown in the figures, at least a portion of the outer ends 392 of the multiple fourth ribs 39 may be connected to the first rib 33 or to the second rib 34.

[0183] At least some of the multiple fourth struts 39 may include an inner end 391 connected to one first intersection region 35 and an outer end 392 connected to another first intersection region 35. At least some of the multiple fourth struts 39 may include an inner end 391 connected to one first intersection region 35 and an outer end 392 connected to an outer edge region 41.

[0184] The outer region 36 may include a plurality of first recesses 371 that are in contact with the first rafter 33 or the second rafter 34 and also in contact with the fourth rafter 39. The outer region 36 may also include a plurality of second recesses 372 that are in contact with the first rafter 33 or the second rafter 34 but not in contact with the fourth rafter 39. The equivalent recess 375 may be composed of two first recesses 371 that have a triangular contour in plan view. The two first recesses 371 of the equivalent recess 375 may be separated by the fourth rafter 39.

[0185] The mask layer 45 may include a portion that overlaps with the fourth rib 39 in a plan view. The mask layer 45 does not have to include a portion that overlaps with the fourth rib 39 in a plan view.

[0186] Figure 26A is a plan view showing an example of the mask 20. In the outer region 36 of the base material 30, the multiple third struts 38 may each intersect with the fourth strut 39. Figure 26B is a plan view showing an enlarged portion of the mask 20 shown in Figure 26A. The region of the base material 30 where the third struts 38 and the fourth struts 39 intersect is also referred to as the second intersection region 40.

[0187] In the example shown in Figure 26B, the equivalent recess 375 is composed of four first recesses 371 having a triangular contour in plan view. The four first recesses 371 of the equivalent recess 375 are separated by a third rib 38 and a fourth rib 39. The second intersection region 40 is located inside the equivalent recess 375 in plan view.

[0188] Figure 27 is a schematic diagram showing an example of the outer region 36. In the outer region 36, the first truss 33, the second truss 34, the third truss 38, and the fourth truss 39 may be arranged to realize a so-called howe truss shape.

[0189] Figure 28 is a schematic diagram showing an example of the outer region 36. In the outer region 36, the first beam 33, the second beam 34, the third beam 38, and the fourth beam 39 may be arranged to realize a so-called Pratt truss shape.

[0190] Figure 29 is a schematic diagram showing an example of the outer region 36. In the outer region 36, the first truss 33, the second truss 34, the third truss 38, and the fourth truss 39 may be arranged to realize a so-called Warren truss shape.

[0191] Figure 30 is a schematic diagram showing an example of the outer region 36. In the outer region 36, the first truss 33, the third truss 38, and the fourth truss 39 may be arranged to realize a so-called Warren truss shape. The example in Figure 30 differs from the example in Figure 29 in that the outer region 36 does not include the second truss 34.

[0192] Figure 31 is a plan view showing an example of the mask 20. The outer region 36 of the base material 30 may include a plurality of first struts 33 and a plurality of second struts 34. The plurality of first struts 33 and a plurality of second struts 34 of the outer region 36 may extend continuously from the inner region 31. The outer region 36 does not have to include struts that extend in directions other than the first direction D1 and the second direction D2, such as a third strut 38 and a fourth strut 39.

[0193] Some of the multiple recesses 37 in the outer region 36 may be located between two adjacent first ribs 33 in the second direction D2, and between two adjacent second ribs 34 in the first direction D1.

[0194] In the example shown in Figure 31, the rigidity of the outer region 36 in the thickness direction T is reduced by the multiple recesses 37. As a result, the difference between the rigidity of the outer region 36 and the rigidity of the inner region 31 in the thickness direction T can be reduced. Therefore, in the alignment process described above, the occurrence of a gap between the exit surface 202 of the mask 20 that overlaps the outer region 36 in a plan view and the first surface 111 of the substrate 110 is suppressed.

[0195] Figure 32 is a plan view showing an example of the mask 20. The multiple recesses 37 in the outer region 36 may each extend so as not to reach the outer edge region 41. For example, the multiple recesses 37 may each extend along the first rib 33 or the second rib 34 of the inner region 31.

[0196] Figure 33 is a plan view showing an example of the mask 20. The recess 37 of the outer region 36 may extend to touch the entire outer edge region 41 of one quarter circle. The outer region 36 does not have to include a crossbar. That is, the outer region 36 may be composed of the recess 37. In this case, the recess 37 does not penetrate the base material 30.

[0197] Figure 34 is a plan view showing an example of the mask 20. The outer region 36 includes bars extending in directions different from the first direction D1 and the second direction D2, such as the third bar 38 and the fourth bar 39 (not shown), but does not necessarily include the first bar 33 and the second bar 34. Each of the multiple bars, such as the third bar 38 and the fourth bar 39, may include an inner end 381 connected to the first intersection region 35 of the inner region 31.

[0198] Figure 35 is a plan view showing an example of the mask 20. The outer region 36 may include a plurality of struts 43 extending toward the center point C1. In other words, the direction in which the struts 43 of the outer region 36 extend may be adjusted toward the center point C1. Each of the struts 43 may include an inner end connected to the first intersection region 35 of the inner region 31.

Claims

1. A mask comprising: a base material having a reference thickness and comprising a first surface and a second surface located opposite to the first surface; a mask layer comprising a third surface facing the second surface and a fourth surface located opposite to the third surface, wherein the base material comprises an inner region and an outer region located outside the inner region in a plan view, the inner region comprising a plurality of first openings penetrating from the first surface to the second surface, a plurality of first struts located between the plurality of first openings and extending in a first direction, a plurality of second struts located between the plurality of first openings and extending in a second direction different from the first direction and intersecting the first struts, the outer region comprising a plurality of recesses, and the mask layer comprising a plurality of second openings overlapping the first openings in a plan view and penetrating from the third surface to the fourth surface.

2. The mask according to claim 1, wherein the plurality of recesses in the outer region are located on the first surface.

3. The mask according to claim 1, wherein the plurality of recesses in the outer region penetrate from the first surface to the second surface.

4. The mask according to claim 1, wherein the substrate is located outside the outer region in a plan view and includes an outer edge region having a thickness of 1 / 2 or more of the reference thickness.

5. The mask according to any one of claims 1 to 4, wherein the outer region includes a plurality of third ribs extending in a third direction different from the first and second directions, and the plurality of recesses include a plurality of first recesses in contact with the first or second rib and the third rib.

6. The mask according to claim 5, wherein at least a portion of the plurality of third struts are connected to the region where the first struts and the second struts of the inner region intersect.

7. The mask according to claim 5, wherein the plurality of recesses include a plurality of second recesses that are in contact with the first and second ribs but not with the third rib.

8. The mask according to claim 5, wherein the mask layer includes a portion that overlaps the third strut in a plan view.

9. The mask according to claim 5, wherein the outer region extends in a fourth direction different from the first, second, and third directions and includes a plurality of fourth struts intersecting the third strut.

10. The mask according to claim 9, wherein at least a portion of the plurality of fourth struts are connected to the region where the first struts and the second struts of the inner region intersect.

11. The mask according to claim 9, wherein the mask layer includes a portion that overlaps the fourth strut in a plan view.

12. The mask according to any one of claims 1 to 4, wherein the standard thickness is 50 μm or more.

13. The mask according to any one of claims 1 to 4, wherein the substrate has a maximum dimension of 100 mm or more and 500 mm or less in a plan view.

14. A mask device comprising: a mask; a first frame connected to the mask and including a third opening; the mask comprising: a base material comprising silicon or a silicon compound and having a reference thickness, including a first surface and a second surface located opposite to the first surface; a mask layer comprising: a third surface facing the second surface and a fourth surface located opposite to the third surface; the base material comprising: an inner region overlapping the third opening in a plan view; an outer region located outside the inner region in a plan view and at least partially overlapping the third opening; and an outer edge region located outside the outer region in a plan view and overlapping the first frame; the inner region comprising: a plurality of first openings penetrating from the first surface to the second surface; a plurality of first struts located between the plurality of first openings and extending in a first direction; a plurality of second struts located between the plurality of first openings and extending in a second direction different from the first direction and intersecting the first struts; the outer region comprising: a plurality of recesses; The masking device comprises a mask layer which, in a plan view, overlaps the first opening and includes a plurality of second openings that penetrate from the third surface to the fourth surface.

15. The mask device according to claim 14, wherein the plurality of recesses in the outer region do not overlap with the first frame in a plan view.

16. The mask device according to claim 14, wherein a portion of the plurality of recesses in the outer region overlaps the first frame in a plan view.

17. A deposition method using a mask device, comprising: an alignment step of adjusting the position of the mask device with respect to a substrate; and a deposition step of depositing a deposition material onto the substrate, wherein the mask device comprises: a mask; and a first frame connected to the mask and including a third opening, wherein the mask comprises: a substrate including a first surface and a second surface located opposite to the first surface, containing silicon or a silicon compound and having a reference thickness; and a mask layer including a third surface facing the second surface and a fourth surface located opposite to the third surface and facing the substrate, wherein the substrate includes: an inner region overlapping the third opening in a plan view; an outer region located outside the inner region and at least partially overlapping the third opening in a plan view; and an outer edge region located outside the outer region and overlapping the first frame in a plan view. The inner region includes a plurality of first openings penetrating from the first surface to the second surface, a plurality of first struts located between the plurality of first openings and extending in a first direction, and a plurality of second struts located between the plurality of first openings and extending in a second direction different from the first direction and intersecting the first struts; the outer region includes a plurality of recesses; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; and the alignment step includes a step of drawing the inner region and the outer region of the substrate toward the substrate.

18. The deposition method according to claim 17, wherein in the alignment step, the inner region and the outer region of the substrate are attracted to the substrate by a magnetic force acting on the portion of the mask layer that overlaps the inner region and the outer region in a plan view.

Images