Chamber leakage detection method, program stored in recording medium, and substrate processing apparatus

Abstract

The present invention provides a method for detecting leakage of a chamber for processing a substrate using plasma. According to the chamber leakage detection method, leakage of the chamber may be detected by measuring light intensity of a first wavelength range and light intensity of a second wavelength range different from the first wavelength range, from an optical signal generated in a space provided by the chamber, and comparing determination target data including information on a deviation between the light intensities, with pre-derived reference data.

Description

Chamber leakage detection method, program stored on a recording medium, and substrate processing device

[0001] The present invention relates to a chamber leakage detection method, a program stored in a recording medium, and a substrate processing device, and more specifically, to a chamber leakage detection method capable of detecting chamber leakage in real time during a semiconductor plasma process, a program stored in a recording medium, and a substrate processing device.

[0002] In semiconductor manufacturing processes, various operations are performed under vacuum conditions, and it is crucial to monitor in real-time whether these processes are proceeding normally. To this end, Optical Emission Spectroscopy (OES) is primarily utilized. OES is a technology that analyzes the state of the process by detecting light emitted from plasma, and it is used by installing optical sensors within the chamber to monitor the plasma state.

[0003] However, OES technology has several limitations when applied to specific semiconductor equipment, particularly dry strip facilities utilizing a Remote Plasma Source (RPS). In such equipment, plasma is generated in the RPS and then transmitted to the chamber via a baffle; during this process, the intensity of the light emitted from the plasma can be significantly reduced. Consequently, the accuracy of detecting plasma signals via OES may decrease. In particular, if vacuum leakage occurs in the chamber, the plasma signal generated by the leakage weakens, making it even more difficult to detect this condition in real time.

[0004] Furthermore, OES devices require expensive detectors, and installing them across the entire chamber can result in a significant cost burden. These economic constraints make it difficult to widely apply OES in large-scale production facilities. Consequently, there is a growing need for more efficient and economical alternative technologies capable of detecting vacuum leaks in real-time in RPS-based facilities.

[0005] One objective of the present invention is to provide a chamber leak detection method capable of effectively detecting a leak occurring in a chamber, a program stored in a recording medium, and a substrate processing device.

[0006] In addition, the present invention has one objective of providing a chamber leak detection method capable of precisely and economically detecting a leak occurring in a chamber, a program stored in a recording medium, and a substrate processing device.

[0007] The objectives of the present invention are not limited thereto, and other unmentioned objectives will be clearly understood by a person skilled in the art from the description below.

[0008] The present invention provides a method for detecting leakage in a chamber that processes a substrate using plasma. The chamber leakage detection method can detect leakage in the chamber by measuring a light intensity in a first wavelength range and a light intensity in a second wavelength range different from the first wavelength range from a light signal generated in the space provided by the chamber, and comparing data to be judged, which includes information regarding the deviations thereof, with reference data derived in advance.

[0009] According to one embodiment, the first wavelength range is a wavelength range in which a change in light intensity of a first width occurs depending on whether an external gas is introduced into the chamber, and the second wavelength range may be a wavelength range in which a change in light intensity of a second width smaller than the first width occurs depending on whether the external gas is introduced into the chamber.

[0010] According to one embodiment, the external gas may be a gas containing oxygen.

[0011] According to one embodiment, the first wavelength range may be 240 nm to 260 nm, and the second wavelength range may be 215 nm to 225 nm.

[0012] According to one embodiment, the reference data may include information regarding the deviations thereof, by measuring the light intensity of the first wavelength range and the light intensity of the second wavelength range from a light signal generated while performing a process of processing a substrate by generating plasma in a normal chamber where no leakage occurs.

[0013] According to one embodiment, the process of processing a substrate in the normal chamber is performed multiple times, wherein the upper limit of the reference data is set based on either the first process or the last process among the processes, and the lower limit of the reference data can be set based on the other of the first process and the last process among the processes.

[0014] According to one embodiment, the light intensity of the first wavelength range and the light intensity of the second wavelength range can be measured by a first photo sensor and a second photo sensor, respectively, connected to a view port provided in the chamber.

[0015] According to one embodiment, the chamber includes a processing chamber in which a substrate is processed, a plasma chamber disposed above the processing chamber for generating plasma, and a diffusion chamber located between the processing chamber and the plasma chamber, and the first photo sensor and the second photo sensor can measure the intensity of light in the first wavelength range and the intensity of light in the second wavelength range through the view port provided in the diffusion chamber.

[0016] In addition, the present invention provides a program stored in a recording medium for performing the chamber leakage detection method.

[0017] In addition, the present invention provides an apparatus for processing a substrate. The substrate processing apparatus may include: a chamber providing a space; a first photo sensor receiving a light signal generated in the space from a view port provided in the chamber and measuring a light intensity of a first wavelength range from the received light signal; a second photo sensor receiving the light signal generated in the space from the view port and measuring a light intensity of a second wavelength range different from the first wavelength range from the received light signal; and a controller detecting leakage of the chamber based on information regarding the light intensity of the first wavelength range and the second wavelength range measured by the first photo sensor and the second photo sensor.

[0018] According to one embodiment, the controller derives judgment target data including information regarding the deviation between the light intensity of the first wavelength range and the light intensity of the second wavelength range, and can detect leakage of the chamber in real time by comparing the derived judgment target data with reference data stored in advance.

[0019] According to one embodiment, the first wavelength range is a wavelength range in which a change in the light intensity of the first width occurs depending on whether an external gas is introduced into the chamber, and the second wavelength range may be a wavelength range in which a change in the light intensity of the second width, smaller than the first width, occurs depending on whether an external gas is introduced into the chamber.

[0020] According to one embodiment, the external gas is a gas containing oxygen, and the first photo sensor may include a first filter for selectively collecting the light signal of the first wavelength range from the light signal, and the second photo sensor may include a second filter for selectively collecting the light signal of the second wavelength range from the light signal.

[0021] According to one embodiment, the first wavelength range may be 240 nm to 260 nm, and the second wavelength range may be 215 nm to 225 nm.

[0022] According to one embodiment, the reference data may include information regarding the deviations thereof, by measuring the light intensity of the first wavelength range and the light intensity of the second wavelength range from a light signal generated while performing a process of processing a substrate by generating plasma in a normal chamber where no leakage occurs.

[0023] According to one embodiment, the process of processing a substrate in the normal chamber is performed multiple times, wherein the upper limit of the reference data is set based on either the first process or the last process among the processes, and the lower limit of the reference data can be set based on the other of the first process and the last process among the processes.

[0024] According to one embodiment, the chamber comprises: a plasma chamber in which plasma is generated; a processing chamber in which a substrate is processed by the plasma; and a diffusion chamber located between the plasma chamber and the processing chamber, and the view port in which the first photo sensor and the second photo sensor collect the optical signal may be provided in the diffusion chamber among the plasma chamber, the processing chamber, and the diffusion chamber.

[0025] According to one embodiment, the view port includes a first view port that collects the light signal at a first position; and a second view port that collects the light signal at a second position that is not facing the first position, and either of the first photo sensor and the second photo sensor can collect the light signal through the first view port, and the other of the first photo sensor and the second photo sensor can collect the light signal through the second view port.

[0026] According to one embodiment, when viewed from above, the angle formed by the first position, the center of the diffusion chamber, and the second position may be 90 degrees.

[0027] According to one embodiment, the diffusion chamber is provided with a leak detection view port, which is the view port, and the processing chamber is provided with a processing chamber view port, and the device may further include an OES (Optical Emission Spectroscopy) device for detecting the end point of a process by the plasma in the processing space, which is the space provided by the processing chamber, through the processing chamber view port.

[0028] According to one embodiment of the present invention, the present invention can effectively detect leakage occurring in a chamber.

[0029] In addition, according to one embodiment of the present invention, leakage occurring in the chamber can be detected precisely and economically.

[0030] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings.

[0031] FIG. 1 is a plan view of a substrate processing apparatus according to one embodiment of the present invention.

[0032] Figure 2 is a drawing showing the appearance of a device provided in the process chamber of Figure 1.

[0033] FIG. 3 is a diagram for explaining the arrangement of the first and second view ports of the leak detection view port of FIG. 2.

[0034] FIG. 4 is a diagram for explaining the configuration of the first photo sensor and the second photo sensor of FIG. 2.

[0035] Figure 5 is a diagram illustrating the difference in light intensity generated in the space provided by the chamber when the chamber is in a normal state and an abnormal state.

[0036] Figure 6 is a graph showing the change in light intensity according to wavelength when the chamber is in a normal state and an abnormal state.

[0037] Figure 7 is a graph showing the deviation values ​​of the light intensity in the first wavelength range and the light intensity in the second wavelength range, which change according to the degree of leakage occurring in the chamber.

[0038] FIG. 8 is a graph showing the change in light intensity in a first wavelength range and light intensity in a second wavelength range that occurs in the space provided by the chamber when a plurality of substrate processing processes are performed in the chamber.

[0039] Figure 9 is a graph showing reference data derived by considering only the light intensity of the first wavelength range.

[0040] Figure 10 is a graph showing reference data derived by considering the light intensity of the first wavelength range and the light intensity of the second wavelength range.

[0041] FIG. 11 is a flowchart for explaining a chamber leakage detection method according to one embodiment of the present invention.

[0042] FIG. 12 is a drawing illustrating a leak detection view port according to another embodiment of the present invention.

[0043] The various features and benefits of the non-limiting embodiments of this specification may become more apparent from a review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the claims. Unless expressly stated otherwise, the accompanying drawings are not to be drawn to scale. For clarity, various dimensions in the drawings may be exaggerated.

[0044] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments are provided to ensure that the present disclosure is thorough and will fully convey its scope to those skilled in the art. To provide a complete understanding of the embodiments of the present disclosure, many specific details, such as examples of specific components, devices, and methods, are presented. It will be apparent to those skilled in the art that specific details are not necessary, that exemplary embodiments may be implemented in many different forms, and that neither should be interpreted as limiting the scope of the present disclosure. In some exemplary embodiments, known processes, known device structures, and known technologies are not described in detail.

[0045] The terms used herein are merely for describing specific exemplary embodiments and are not intended to limit exemplary embodiments. Singular expressions or expressions where singularity is not specified, as used herein, are intended to include plural expressions unless the context clearly indicates otherwise. The terms “comprising,” “comprising,” “having,” and “having” are open-ended and thus specify the presence of the mentioned features, components, steps, operations, elements, and / or components, and do not exclude the presence or addition of one or more other features, components, steps, operations, elements, components, and / or groups thereof. Method steps, processes, and operations in this specification are not to be interpreted as necessarily being performed in the specific order discussed or described unless the order of performance is specified. Additionally, additional or alternative steps may be selected.

[0046] When an element or layer is referred to as being "on," "connected," "combined," "attached," "adjacent," or "covering" another element or layer, it may be directly on, connected to, combined with, attached to, adjacent to, or covering said other element or layer, or intermediate elements or layers may exist. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly combined" with another element or layer, it should be understood that intermediate elements or layers do not exist. Throughout the specification, the same reference numerals refer to the same elements. The term "and / or" as used in the present invention includes all combinations and non-combinations of one or more of the listed items.

[0047] Although terms such as first, second, third, etc., may be used to describe various elements, regions, layers, and / or sections in the present invention, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Accordingly, the first element, first region, first layer, or first section discussed below may be referred to as the second element, second region, second layer, or second section without departing from the teachings of the exemplary embodiments.

[0048] Spatially relative terms (e.g., "below," "under," "lower," "above," "top," etc.) may be used for convenience of explanation to describe the relationship between one element or feature and another element(s) or feature(s) as illustrated in the drawings. It should be understood that spatially relative terms are intended to include not only the orientations illustrated in the drawings but also other orientations of the device in use or operation. For example, if the device in the drawings is inverted, elements described as "below" or "under" other elements or features will be oriented "above" other elements or features. Thus, the term "below" may include both upper and lower orientations. The device may be oriented differently (rotated 90 degrees or in a different orientation), and the spatially relative descriptive terms used in the present invention may be interpreted accordingly.

[0049] It should be understood that there may be some inaccuracy when the terms "identical" or "same" are used in the description of the embodiments. Therefore, if one element or value is referred to as identical to another element or value, it should be understood that said element or value is identical to another element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0050] Where the words “approximately” or “substantially” are used in this specification with respect to figures, it should be understood that such figures include a manufacturing or operational tolerance (e.g., ±10%) of the figures mentioned. Additionally, where the words “generally” and “substantially” are used with respect to geometric forms, it should be understood that while geometric accuracy is not required, freedom of form (latitude) is within the scope of disclosure.

[0051] Unless otherwise defined, all terms used in the present invention (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the exemplary embodiments belong. Furthermore, terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with that meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the present invention.

[0052] FIG. 1 is a plan view of a substrate processing device according to an embodiment of the present invention. Referring to FIG. 1, a substrate processing device (1) according to an embodiment of the present invention has an equipment front end module (20) and a processing module (30).

[0053] The equipment front end module (20) has a load port (10) and a transfer frame (21). The load port (10) is positioned in front of the equipment front end module (20) in a first direction (11). The load port (10) has a plurality of support members (6). A carrier (4) containing a substrate (W) to be provided to the process and a substrate (W) that has completed process processing is placed on each support member (6), arranged in a line in a second direction (12). The carrier (4) may be called a cassette, FOUP, etc.

[0054] A transfer frame (21) is positioned between the load port (10) and the processing module (30). The transfer frame (21) includes a first transfer robot (25) positioned therein and transferring a substrate (W) between the load port (10) and the processing module (30). The first transfer robot (25) moves along a transfer rail (27) provided in the second direction (12) and transfers the substrate (W) between the carrier (4) and the processing module (30).

[0055] The processing module (30) includes a load lock chamber (40), a transfer chamber (50), and a process chamber (60).

[0056] The load lock chamber (40) is positioned adjacent to the transfer frame (21). For example, the load lock chamber (40) may be positioned between the transfer chamber (50) and the equipment front end module (20). The load lock chamber (40) provides a space for the substrate (W) to be supplied to the process to wait before being transferred to the process chamber (60), or for the substrate (W) after the process is completed to wait before being transferred to the equipment front end module (20).

[0057] A transfer chamber (50) is positioned adjacent to a load lock chamber (40). When viewed from above, the transfer chamber (50) has a polygonal body. Referring to FIG. 1, the transfer chamber (50) has a pentagonal body when viewed from above. On the outer side of the body, a load lock chamber (40) and a plurality of process chambers (60) are arranged along the perimeter of the body. A passage (not shown) for a substrate (W) to enter and exit is formed on each side wall of the body, and the passage connects the transfer chamber (50) with the load lock chamber (40) or the process chambers (60). A door (not shown) is provided in each passage to open and close the passage to seal the interior. A second transfer robot (53) for transferring the substrate (W) between the load lock chamber (40) and the process chambers (60) is positioned in the internal space of the transfer chamber (50). The second transfer robot (53) transfers unprocessed substrates (W) waiting in the load lock chamber (40) to the process chamber (60) or transfers substrates (W) that have completed process processing to the load lock chamber (40). Then, to sequentially provide substrates (W) to a plurality of process chambers (60), the substrates (W) are transferred between process chambers (60). As shown in FIG. 1, when the transfer chamber (50) has a pentagonal body, the load lock chamber (40) is placed on the side wall adjacent to the front end module (20) of the equipment, and the process chambers (60) are placed in succession on the remaining side wall. The transfer chamber (50) can be provided in various forms depending on the required process module, in addition to the above shape.

[0058] A process chamber (60) is arranged along the perimeter of a transfer chamber (50). Multiple process chambers (60) may be provided. In each process chamber (60), process processing is performed on a substrate (W). The process chamber (60) receives the substrate (W) from the second transfer robot (53), performs process processing, and provides the substrate (W) with completed process processing to the second transfer robot (53). The process processing performed in each process chamber (60) may differ from one another.

[0059] The controller (70) can control the configurations of the substrate processing device (1). Additionally, the controller (70) may include a recording medium storing a program for executing the chamber leakage detection method described later. The controller (70) can control the configurations of the substrate processing device (1) to enable the execution of the chamber leakage detection method described later.

[0060] The controller (70) may be equipped with a process controller comprising a microprocessor (computer) that executes control of the substrate processing device (1), a user interface comprising a keyboard for which an operator performs command input operations to manage the substrate processing device (1), a display for visualizing and displaying the operating status of the substrate processing device, a control program for executing processing in the substrate processing device (1) under the control of the process controller, and a memory unit storing a program for executing processing in each component according to various data and processing conditions, i.e., a processing recipe. Additionally, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium within the memory unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0061] Hereinafter, a device provided in a chamber that performs a plasma treatment process among process chambers (60) will be described. A plasma treatment process is a process of treating a substrate (W) by delivering plasma to the substrate (W). For example, the plasma treatment process may be a process such as etching or dry stripping to remove a film on the substrate (W). Alternatively, the plasma treatment process may be a process such as deposition or passivation to form a film on the substrate (W). Hereinafter, the process chamber (60) will be described as an example of performing a dry stripping process to remove a mask formed by photoresist, etc. on the substrate (W).

[0062] Figure 2 is a drawing showing the appearance of a device provided in the process chamber of Figure 1.

[0063] The device (1000) provided in the process chamber (60) includes a process processing unit (200), an end point detection unit (300), a plasma generation unit (400), a first photo sensor (510), and a second photo sensor (520). The first and second photo sensors (510, 520) and the controller (70) may also be referred to as a chamber leakage detection unit.

[0064] A substrate (W) is introduced into the process processing unit (200), and plasma treatment is performed on the substrate (W). The process processing unit (200) includes a processing chamber (210), a support unit (230), and a baffle (250).

[0065] The processing chamber (210) provides a processing space (212). The processing chamber (210) has the shape of a container with an open top. In the processing space (212), a support unit (230) supports the substrate (W). The support unit (230) serves to support the substrate (W) while the substrate (W) is being processed by plasma. Although not illustrated, the support unit (230) may be provided with a heater for heating the substrate (W), a bias power source for accelerating ions within the plasma delivered to the substrate (W), a lift pin module for raising and lowering the substrate (W) in the up-down direction, a vacuum suction line or an electrostatic electrode for chucking the substrate (W), etc., in order to increase the processing efficiency of the substrate (W).

[0066] An exhaust hole (214) may be provided at the bottom of the processing chamber (210). The exhaust hole (214) may be connected to a vacuum exhaust device such as a pump. The atmosphere of the processing space (212) can be exhausted through the exhaust hole (214), and thereby the atmosphere of the processing space (212) can be controlled to an atmosphere close to a vacuum atmosphere.

[0067] The baffle (250) is positioned between the processing space (212) and the diffusion space (442) described later. A baffle hole (252) is formed in the baffle (250). Plasma flowing into the processing space (212) via the plasma generation space (412) and the diffusion space (442) described later passes through the baffle hole (252) formed in the baffle (250). Through this, plasma can be uniformly delivered to the substrate (W) placed on the support unit (230).

[0068] Meanwhile, a processing chamber view port (211) may be provided on the side wall of the processing chamber (210). The processing chamber view port (211) may be provided with a transparent material. A light signal generated by light in the processing space (212) may be transmitted to an end point detection unit (300) through the processing chamber view port (211).

[0069] The end point detection unit (300) may be an OES (Optical Emission Spectroscopy) device. The end point detection unit (300) monitors the intensity of light generated in the processing space (212). The end point detection unit (300) monitors the intensity of light of a specific wavelength range generated as the plasma reacts with the film material on the substrate (W) to be removed, and detects whether the processing of the substrate (W) in the processing space (212) has been completed based on the change in light intensity. The end point detection unit (300) may collect the light signal generated in the processing space (212) through an optical cable (FC). The optical cable (FC) may be connected to the processing chamber view port (211).

[0070] The plasma generation unit (400) can generate plasma by exciting a process gas and supply the generated plasma to a processing space (212). The plasma generation unit (400) may include a plasma chamber (410), a gas supply unit (420), a power application unit (430), and a diffusion chamber (440).

[0071] The plasma chamber (410) may have a shape with an open top surface and a bottom surface. The plasma chamber (410) may have a tubular shape with an open top surface and a bottom surface. The plasma chamber (410) may have a cylindrical shape with an open top surface and a bottom surface. The plasma chamber (410) may have a plasma generation space (412). The top surface of the plasma chamber (410) may be sealed by a gas supply port (414). The gas supply port (414) may be connected to a gas supply unit (420). Process gas may be supplied to the plasma generation space (412) through the gas supply port (414).

[0072] The gas supply unit (420) can supply process gas. The gas supply unit (420) can be connected to the gas supply port (414). The type of process gas can be varied depending on the type of film to be removed from the substrate (W). For example, the process gas may be a gas containing H2N2.

[0073] The power application unit (430) applies high-frequency power to the plasma generation space (412). The power application unit (430) may be a plasma source that generates plasma by exciting a process gas in the plasma generation space (412). The power application unit (430) may include an antenna (432) and a power source (434).

[0074] The antenna (432) may be an inductively coupled plasma (ICP) antenna. The antenna (432) may be provided in a coil shape. The antenna (432) may be wound multiple times around the plasma chamber (410) from outside the plasma chamber (410). The antenna (432) may be wound multiple times around the plasma chamber (410) in a spiral shape from outside the plasma chamber (410). The antenna (432) may be wound around the plasma chamber (410) in an area corresponding to the plasma generation space (412). One end of the antenna (432) may be provided at a height corresponding to the upper region of the plasma chamber (410) when viewed from the front cross-section of the plasma chamber (410). The other end of the antenna (432) may be provided at a height corresponding to the lower region of the plasma chamber (410) when viewed from the front cross-section of the plasma chamber (410).

[0075] The power source (434) can apply power to the antenna (432). The power source (434) can apply a high-frequency alternating current to the antenna (432). The high-frequency alternating current applied to the antenna (432) can form an induced electric field in the plasma generation space (412). Process gas supplied into the plasma generation space (412) can obtain the energy required for ionization from the induced electric field and be converted into a plasma state. Additionally, the power source (434) can be connected to one end of the antenna (432). The power source (434) can be connected to one end of the antenna (432) provided at a height corresponding to the upper region of the plasma chamber (410). Additionally, the other end of the antenna (432) can be grounded. The other end of the antenna (432) provided at a height corresponding to the lower region of the plasma chamber (410) can be grounded. However, it is not limited to this, and a power supply (434) may be connected to the other end of the antenna (432) and one end of the antenna (432) may be grounded.

[0076] The diffusion chamber (440) can diffuse the plasma generated in the plasma chamber (410). The diffusion chamber (440) can be positioned below the plasma chamber (410). The diffusion chamber (440) may have a shape with the top and bottom open. The diffusion chamber (440) may have an inverted funnel shape. The top of the diffusion chamber (440) may have a diameter corresponding to that of the plasma chamber (410). The bottom of the diffusion chamber (440) may have a larger diameter than the top of the diffusion chamber (440). The diameter of the bottom of the diffusion chamber (440) may increase from the top to the bottom. Additionally, the diffusion chamber (440) may have a diffusion space (442). The plasma generated in the plasma generation space (412) can be diffused while passing through the diffusion space (442). The plasma introduced into the diffusion space (442) can be introduced into the processing space (412) via the baffle (250).

[0077] Meanwhile, a leak detection view port (441) may be provided on the side wall of the diffusion chamber (440). The leak detection view port (441) may be provided on the top of the diffusion chamber (440). The leak detection view port (441) may be provided with a transparent material. Through the leak detection view port (441), a light signal generated by light in the diffusion space (442) may be transmitted to the first and second photo sensors (510, 520) described later.

[0078] The first and second photo sensors (510, 520) may be directly connected to the leak detection view port (441) via a fixed bracket or indirectly via optical cables (FC). When using optical cables (FC), an optical receiver capable of receiving an optical signal is provided at one end of the optical cables (FC), and the optical receiver may be installed to face the leak detection view port (441) through a structure such as a fixed bracket. The optical cable (FC) connected to the leak detection view port (441) may have the same or similar structure as the optical cable (FC) connected to the processing chamber view port (211) described above.

[0079] FIG. 3 is a diagram for explaining the arrangement of the first and second view ports of the leak detection view port of FIG. 2.

[0080] Referring to FIGS. 2 and 3, the first view port (441a) and the second view port (441b) may be provided at different locations. The first view port (441a) may be provided at the first location, and the second view port (441b) may be provided at the second location. The first and second locations may be provided at the same height. The first and second locations may be positions arranged in an L shape with respect to the center (CE) of the diffusion chamber (440). That is, the angle formed by the first location, the center (CE) of the diffusion chamber (440), and the second location may be 90 degrees. In short, the first and second view ports (441a, 441b) may be at locations that do not face each other. The term "at locations that do not face each other" may mean an angle formed by the first location, the center (CE) of the diffusion chamber (440), and the second location that is less than 180 degrees, preferably 90 degrees or less.

[0081] This is because if the first view port (441a) and the second view port (441b) do not face each other or are not provided on the same side wall, the other of the first view port (441a) and the second view port (441b) may obstruct light collection to either of the first view port (441a) and the second view port (441b). Such obstruction may be caused by light reflection, etc.

[0082] Referring again to FIG. 2, the first and second photo sensors (510, 520) described later receive a light signal to detect chamber leakage described later based on a light signal generated in the diffusion chamber (440). Since processing of the substrate (W) is performed in the processing chamber (210) and plasma is generated by exciting the process gas in the plasma chamber (410), it may not be suitable for detecting chamber leakage. This is because a wide variety of factors can affect the light intensity within a specific range of wavelengths for determining chamber leakage. Accordingly, the present invention provides a second view port (441) in the diffusion chamber (440) and detects chamber leakage described later through a light signal generated in the diffusion space (442) of the diffusion chamber (440).

[0083] FIG. 4 is a diagram for explaining the configuration of the first photo sensor and the second photo sensor of FIG. 2. Referring to FIG. 2 and FIG. 4, the first and second photo sensors (510, 520) collect light signals generated in the diffusion space (442).

[0084] The first photo sensor (510) includes a first filter (511), a first photodiode (512), and a first amplifier (513). The first filter (511) selectively receives an optical signal of a first wavelength range from an optical signal. The first filter (511) is provided to selectively collect an optical signal of a wavelength range of 240 nm to 260 nm. The first photodiode (512) detects an optical intensity based on electrical energy from an optical signal based on light energy of the first wavelength range. The first amplifier (513) amplifies the detected optical intensity.

[0085] The second photo sensor (520) includes a second filter (521), a second photodiode (522), and a second amplifier (523). The second filter (521) selectively receives an optical signal of a second wavelength range from an optical signal. The second filter (521) is provided to selectively collect an optical signal of a wavelength range of 215 nm to 225 nm. The second photodiode (522) detects an optical intensity based on electrical energy from an optical signal based on light energy of the second wavelength range. The second amplifier (523) amplifies the detected optical intensity.

[0086] The light intensity of the first wavelength range detected by the first photo sensor (510) and the light intensity of the second wavelength range detected by the second photo sensor (520) can be transmitted to the controller (70). Based on information regarding the light intensity of the first wavelength range detected by the first photo sensor (510) and the light intensity of the second wavelength range detected by the second photo sensor (520), the controller (70) detects leakage that may occur in the chambers (210, 410, 440) of the device (1000).

[0087] Hereinafter, a chamber leakage detection method according to an embodiment of the present invention will be described in more detail. Chamber leakage detection is performed based on light intensity in the first and second wavelength ranges detected by the first and second photo sensors (510, 520) described above. Hereinafter, data regarding light intensity requiring judgment to detect whether chamber leakage has occurred is defined as judgment target data. In addition, comparison target data for determining whether judgment target data is normal data (when no chamber leakage occurs) or abnormal data (when chamber leakage occurs) is defined as reference data. Reference data includes information regarding light intensity in the first and second wavelength ranges collected while a process of processing a substrate (W) is performed in a normal chamber where no chamber leakage occurs.

[0088] Figure 5 is a diagram illustrating the difference in light intensity generated in the space provided by the chamber when the chamber is in a normal state and an abnormal state.

[0089] Referring to FIG. 5, the Offset Value represents the intensity of light received from the chamber when no plasma is generated within the chamber, that is, when no light is generated within the chamber. The Offset Value can be practically close to 0. The Target Value represents the intensity of light received from the chamber when plasma is generated within the chamber, that is, when light is generated within the chamber. In particular, the Target Value is the intensity of light received when no leakage occurs in the chamber, that is, when plasma is generated in a normal chamber.

[0090] When a leak occurs in the chamber, external gas flows into the chamber. For example, the external gas may be external air containing oxygen, such as O2. When the external gas flows in, light may be generated as the external gas is excited into a plasma state. In other words, when a chamber leak occurs, the intensity of light generated in the abnormal state (Vacuum Leak) may differ from the Target Value compared to the normal state (Normal) as shown in FIG. 5. The chamber leak detection method of the present invention detects the chamber leak by taking into account the above difference.

[0091] Figure 6 is a graph showing the change in light intensity according to wavelength when the chamber is in a normal state and an abnormal state.

[0092] Referring to FIG. 6, the OES device is connected to the second view port (441), and the substrate (W) is processed using the normal chamber in a normal state where no leakage occurs in the chamber (210, 410, 440) and the abnormal chamber in an abnormal state where leakage occurs in the chamber (210, 410, 440), respectively, and the light intensity is monitored accordingly.

[0093] Referring to FIG. 6, the light intensity at wavelengths of 247 nm and 258 nm corresponding to the O2 Peak in the UV region showed a significant change. Based on these results, a first filter (511) capable of transmitting a wavelength range of 250 nm (approx. 240 nm to 260 nm) was selected.

[0094] Meanwhile, the reason the second filter (521) was selected as a filter that transmits a 220nm wavelength range (approximately 215nm to 225nm) is that when monitoring with only a single wavelength, the range of change in light intensity is large depending on external factors (temperature, plasma state, degree of substrate processing, etc.). That is, the second filter (521) was selected as a filter that transmits a 220nm wavelength range for the purpose of setting a wavelength range with almost no change in light intensity as a reference value depending on whether external gas is introduced due to chamber leakage.

[0095] In other words, the first wavelength range is a wavelength range having a first width in which the range of change in light intensity is relatively large when external gas is introduced into the chamber (210, 410, 440), and the second wavelength range is a wavelength range having a second width in which the range of change in light intensity is relatively small (almost none) when external gas is introduced into the chamber (210, 410, 440).

[0096] Accordingly, both the data subject to judgment and the reference data are derived based on data containing information regarding the deviation between the light intensity of the first wavelength range and the light intensity of the second wavelength range. This is because, when detecting chamber leakage based on information regarding the deviation between the light intensity of the first wavelength range and the light intensity of the second wavelength range, it is possible to minimize the influence of other factors, excluding chamber leakage, on the data.

[0097] FIG. 7 is a graph showing the deviation values ​​of the light intensity in the first wavelength range and the light intensity in the second wavelength range, which change according to the degree of leakage occurring in the chamber. FIG. 7 can also be seen as illustrating examples of data to be judged.

[0098] Referring to FIG. 7, it can be seen that the difference value between the light intensity of the first wavelength range and the light intensity of the second wavelength range changes depending on the change in the leak rate. More specifically, it can be seen that the difference value between the light intensity of the first wavelength range and the light intensity of the second wavelength range increases as the leak rate increases. That is, in the data to be judged, it can be estimated that the greater the difference value between the light intensity of the first wavelength range and the light intensity of the second wavelength range, the greater the leakage occurs in the chamber (210, 410, 440).

[0099] Below, the reference data will be explained in more detail. FIG. 8 is a graph showing the change in light intensity in a first wavelength range and light intensity in a second wavelength range that occurs in the space provided by the chamber when a plurality of substrate processing processes are performed in the chamber.

[0100] FIG. 8 illustrates the change in light intensity in a first wavelength range and light intensity in a second wavelength range when process treatment is performed on a substrate (W) multiple times. Process treatment on the substrate (W) is performed in a normal chamber. The normal chamber may be a chamber such as the chamber (210, 410, 440) provided by the above-described device (1000) for collecting judgment target data, or it may be a chamber different therefrom.

[0101] At this time, in order to set the upper and lower limits of the reference data, light intensity data collected during the first and last processes of the substrate (W) processing performed in the normal chamber may be used. Since both the first and last processes are performed in the normal chamber, the corresponding light intensity data are suitable as data for deriving the reference data. However, the normal chamber in the first process may have a somewhat lower level of stabilized condition, while the normal chamber in the last process may have a somewhat higher level of stabilized condition. Therefore, the processes with the highest collected light intensity are the first and last processes. Accordingly, the threshold upper limit value of the aforementioned data to be judged can be set based on either the light intensity collected in the first process or the light intensity collected in the last process, and the threshold lower limit value of the aforementioned data to be judged can be set based on the other.

[0102] In addition, reference data is also set based on information regarding the deviation between the light intensity of the first wavelength range and the light intensity of the second wavelength range.

[0103] Figure 9 is a graph showing reference data derived by considering only the light intensity of the first wavelength range. Figure 9 can serve as a comparison example of the aforementioned reference data. As can be seen by referring to Figure 9, in this case, it can be confirmed that there is a large deviation between the light intensity collected in the first process and the light intensity collected in the last process. That is, the range between the upper threshold and the lower threshold is large. This large range is because factors other than chamber leakage affect the change in light intensity. Therefore, when detecting chamber leakage by comparing the judgment target data, which considers only the light intensity of the first wavelength range, with the reference data according to the comparison example, a problem may arise where the chamber leakage is not detected because the judgment target data where actual chamber leakage occurred falls between the upper threshold and the lower threshold of the reference data in Figure 9.

[0104] Figure 10 is a graph illustrating reference data derived by considering the light intensity of the first wavelength range and the light intensity of the second wavelength range. The graph in Figure 9 may be an example of the reference data described above. As can be seen by referring to Figure 10, in this case, it can be confirmed that the difference between the light intensity collected in the first process and the light intensity collected in the last process is small. That is, the range of the critical upper limit and the critical lower limit is small. The reason the range is small is that the influence of factors other than chamber leakage on changes in light intensity has been eliminated. Therefore, when detecting chamber leakage by comparing the judgment target data, which considers only the light intensity of the first wavelength range and the second wavelength range, with the reference data according to the example, the judgment target data where actual chamber leakage occurred does not fall between the critical upper limit and the critical lower limit of the reference data in Figure 10, so chamber leakage can be properly detected.

[0105] FIG. 11 is a flowchart for explaining a chamber leakage detection method according to one embodiment of the present invention.

[0106] Referring to FIG. 11, a chamber leakage detection method according to one embodiment of the present invention can be implemented by the first photo sensor (510), the second photo sensor (520), and the controller (70) described above.

[0107] A chamber leakage detection method according to one embodiment of the present invention may include a reference data derivation step (S10), a judgment target data derivation step (S20), and a chamber leakage judgment step (S30).

[0108] The reference data derivation step (S10) can derive the reference data described above. The reference data can be derived based on data regarding light intensity collected during plasma treatment of a substrate (W) performed multiple times in a normal chamber where no leakage occurs. At this time, the light intensity of the first wavelength range and the light intensity of the second wavelength range can be measured. The light intensity of the first wavelength range and the light intensity of the second wavelength range may be measured based on the first and second photo sensors (510, 520) described above, or alternatively, may be measured through a separate OES device.

[0109] Reference data may include information on deviations from the light intensity in a first wavelength range and the light intensity in a second wavelength range, measured from the light signal generated while performing a process of processing a substrate by generating plasma in a normal chamber. Additionally, the threshold upper limit value of the reference data may be set based on either the first process or the last process among the aforementioned multiple substrate processing processes, and the threshold lower limit value may be set based on the other of the first process and the last process.

[0110] Meanwhile, the light intensity for deriving reference data can also be collected through the diffusion chamber (440) of the normal chamber. The derived reference data can be stored in advance on a recording medium of the controller (70).

[0111] The step of deriving judgment target data (S20) may be a step of deriving judgment target data to detect whether chamber leakage has occurred. The judgment target data may include information regarding the deviation between the light intensity of the first wavelength range and the light intensity of the second wavelength range as described above. The light intensity of the first wavelength range may be collected by the first photo sensor (510) described above, and the light intensity of the second wavelength range may be collected by the second photo sensor (520) described above.

[0112] In the chamber leakage determination step (S30), the data to be determined can be compared with reference data. If the data to be determined falls within the range between the upper threshold value and the lower threshold value of the reference data, it is determined that the chamber state at the time the data to be determined is in a normal state; otherwise, it is determined that a leak has occurred in the chamber. Additionally, in the chamber leakage determination step (S30), the data to be determined can be monitored in real time by a user through a user interface, such as a display, that the controller (70) may have.

[0113] Furthermore, in the example described above, the upper threshold and lower threshold are set based on the first and last processes among the processes performed in the normal chamber, but this is not limited thereto. For example, the reference data may be a threshold set in a specific section of the process. In this case, if the optical intensity deviation value of the first and second wavelength range of the data to be judged exceeds the set threshold, the user may determine that leakage has occurred in the chamber.

[0114] Additionally, in the example described above, the first view port (441a) and the second view port (441b) are arranged in an 'L' shape with respect to the center (CE) of the diffusion chamber (440), but this is not limited thereto. For example, as shown in FIG. 12, the leak detection view port (441) includes a first view port (441a) extending in a vertical direction and a second view port (441b) extending in a horizontal direction. The second view port (441b) may extend horizontally from one end of the first view port (441a) or an area adjacent thereto. An area adjacent thereto may refer to a very small gap range within a range of a few centimeters.

[0115] The first photo sensor (510) and the second photo sensor (520) can each collect an optical signal from the diffusion space (442) from either one of the first and second view ports (441a, 441b) and the other. The aforementioned optical cables (FC) can each be connected to the first view port (441a) and the second view port (441b). The first view port (441a) and the second view port (441b) may be connected to each other or may be spaced apart from each other by a small gap.

[0116] Additionally, the first view port (441a) and the second view port (441b) are formed by extending in different directions. Since the airflow in the diffusion space (442) generally flows downward, the first view port (441a) is configured to extend vertically to take this into account. However, if only the downward airflow is considered, it may be difficult to properly detect leakage occurring within the device (1000). That is, the second view port (441b) may be configured to extend horizontally so that leakage can be properly detected by also considering the airflow distribution in the left-right direction.

[0117] It should be understood that exemplary embodiments are disclosed herein and that other variations may be possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but may be interchangeable and used in selected embodiments where applicable, even if not specifically illustrated or described. Such variations should not be construed as departing from the spirit and scope of the present disclosure, and all such variations that are obvious to a person skilled in the art are intended to be included within the scope of the following claims.

[0118] [Explanation of the symbol]

[0119] Reference Data Derivation Step: S10

[0120] Derivation of data subject to judgment step: S20

[0121] Chamber leak determination step: S30

[0122] First photo sensor: 510

[0123] Second photo sensor: 520

[0124] Controller: 70

[0125] Diffusion Chamber: 440

[0126] Leak Detection Viewport: 441

Claims

1. A method for detecting leakage in a chamber that processes a substrate using plasma, A chamber leakage detection method for detecting leakage in the chamber by measuring a light intensity in a first wavelength range and a light intensity in a second wavelength range different from the first wavelength range from a light signal generated in a space provided by the chamber, and comparing a judgment target data containing information regarding the deviations thereof with reference data derived in advance.

2. In Paragraph 1, The above first wavelength range is a wavelength range in which a change in light intensity of the first width occurs depending on whether external gas is introduced into the chamber, and A chamber leakage detection method in which the second wavelength range is a wavelength range in which a change in light intensity of a second width smaller than the first width occurs depending on whether the external gas is introduced into the chamber.

3. In Paragraph 2, A chamber leak detection method in which the above external gas is a gas containing oxygen.

4. In Paragraph 3, The above first wavelength range is 240 nm to 260 nm, and A chamber leakage detection method in which the second wavelength range is 215 nm to 225 nm.

5. In Paragraph 4, The above reference data is, A chamber leakage detection method comprising measuring the light intensity of the first wavelength range and the light intensity of the second wavelength range from a light signal generated while performing a process of processing a substrate by generating plasma in a normal chamber where no leakage occurs, and including information regarding the deviation thereof.

6. In Paragraph 5, The process of processing the substrate in the above normal chamber is performed multiple times, but, The upper limit of the above reference data is set based on either the first process or the last process among the above processes, and A chamber leakage detection method in which the lower limit of the above reference data is set based on the other of the first process and the last process among the above processes.

7. In any one of paragraphs 1 through 6, A chamber leakage detection method in which the light intensity of the first wavelength range and the light intensity of the second wavelength range are each measured by a first photo sensor and a second photo sensor connected to a view port provided in the chamber.

8. In Paragraph 7, A chamber leakage detection method comprising a processing chamber in which a substrate is processed, a plasma chamber disposed above the processing chamber to generate plasma, and a diffusion chamber located between the processing chamber and the plasma chamber, wherein the first photo sensor and the second photo sensor measure the intensity of light in the first wavelength range and the intensity of light in the second wavelength range through the view port provided in the diffusion chamber.

9. A program stored in a recording medium for performing a chamber leakage detection method according to any one of paragraphs 1 to 6.

10. In an apparatus for processing a substrate, A chamber providing space; A first photo sensor that receives a light signal generated in the space from a view port provided in the chamber and measures the light intensity of a first wavelength range from the received light signal; A second photo sensor that receives the light signal generated in the space from the view port and measures the light intensity of a second wavelength range different from the first wavelength range from the received light signal; and A substrate processing apparatus comprising a controller that detects leakage of the chamber based on information regarding the light intensity of the first wavelength range and the second wavelength range measured by the first photo sensor and the second photo sensor.

11. In Paragraph 10, The above controller is, A substrate processing device that derives judgment target data including information regarding the deviation between the light intensity of the first wavelength range and the light intensity of the second wavelength range, and detects leakage of the chamber in real time by comparing the derived judgment target data with reference data stored in advance.

12. In Paragraph 11, The above first wavelength range is a wavelength range in which a change in the light intensity of the first width occurs depending on whether an external gas is introduced into the chamber, and A substrate processing device in which the second wavelength range is a wavelength range in which a change in light intensity of the second width, smaller than the first width, occurs depending on whether the external gas is introduced into the chamber.

13. In Paragraph 12, The above external gas is a gas containing oxygen, and The first photo sensor above is, It includes a first filter for selectively collecting the optical signal of the first wavelength range from the optical signal, and The second photo sensor above is, A substrate processing device comprising a second filter for selectively collecting the optical signal of the second wavelength range from the optical signal.

14. In Paragraph 13, The above first wavelength range is 240 nm to 260 nm, and A substrate processing device in which the second wavelength range is 215 nm to 225 nm.

15. In Paragraph 14, The above reference data is, A substrate processing apparatus that measures the light intensity of the first wavelength range and the light intensity of the second wavelength range from a light signal generated while performing a process of processing a substrate by generating plasma in a normal chamber where no leakage occurs, and includes information regarding the deviations thereof.

16. In Paragraph 15, The process of processing the substrate in the above normal chamber is performed multiple times, but, The upper limit of the above reference data is set based on either the first process or the last process among the above processes, and The lower limit of the above reference data is a substrate processing device set based on the other of the first process and the last process among the above processes.

17. In any one of paragraphs 10 through 16, The above chamber is, Plasma chamber where plasma is generated; A processing chamber in which a substrate is processed by the above plasma; and It includes a diffusion chamber located between the plasma chamber and the processing chamber, and The view port in which the first photo sensor and the second photo sensor collect the light signal is a substrate processing device provided in the diffusion chamber among the plasma chamber, the processing chamber, and the diffusion chamber.

18. In Paragraph 17, The above viewport is, A first view port for collecting the optical signal at a first position; and It includes a second view port that collects the optical signal at a second position that does not face the first position, and Either of the first photo sensor and the second photo sensor collects the light signal through the first view port, and The other of the first photo sensor and the second photo sensor is a substrate processing device that collects the light signal through the second view port.

19. In Paragraph 17, A substrate processing apparatus in which, when viewed from above, the angle formed by the first position, the center of the diffusion chamber, and the second position is 90 degrees.

20. In Paragraph 17, The above diffusion chamber is provided with a leak detection view port, which is the view port, and The processing chamber is provided with a processing chamber view port, and The above device is, A substrate processing apparatus further comprising an OES (Optical Emission Spectroscopy) device for detecting the end point of a process by the plasma in the processing space, which is the space provided by the processing chamber, through the processing chamber view port.

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