Chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and, more specifically, to a chemical vapor deposition apparatus capable of improving, during deposition of a silicon carbide (SiC) film or the like on a substrate, the temperature uniformity of a susceptor on which the substrate is mounted.

Description

Chemical Vapor Deposition System

[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of improving temperature uniformity by reducing the temperature variation of the susceptor on which the substrate is mounted when depositing a silicon carbide (SiC) film or the like on a substrate.

[0002] Recently, the demand for SiC power devices has surged, and the related market is expected to continue growing. These SiC power devices can be fabricated by placing a substrate in a reaction chamber and growing a silicon carbide (SiC) single crystal on a substrate mounted on a susceptor through thermal decomposition by supplying a mixture of process gas and carrier gas into the chamber.

[0003] In this case, the substrate is placed on the satellite and positioned on the susceptor, and the satellite rotates to allow the process on the substrate to proceed. Additionally, the susceptor is heated by a heater to heat the substrate.

[0004] However, in the case of a chemical vapor deposition apparatus according to the prior art, the process gas is supplied from the side of the processing space, and the susceptor is extended along the direction of the process gas flow and is composed of a single component.

[0005] In this configuration, when the susceptor and substrate are heated by a heater, the temperature uniformity of the susceptor may be reduced due to the high temperature of the heater. That is, some areas of the susceptor may be heated locally, thereby lowering the temperature uniformity. This reduction in temperature uniformity may cause warping or cracking in the susceptor. It has been confirmed that this phenomenon occurs frequently when the susceptor is formed as a single unit and is positioned to extend along the direction of process gas flow.

[0006] The present invention aims to provide a chemical vapor deposition apparatus capable of improving temperature uniformity by reducing the temperature variation of the susceptor on which the substrate is mounted, in order to solve the above-mentioned problems.

[0007] The objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus comprising: a chamber; a susceptor provided inside the chamber on which the substrate is placed and which heats the substrate; an upper plate provided inside the chamber and above the susceptor, which provides a processing space between the susceptor and the upper plate for processing the substrate; and a gas supply unit for supplying process gas from the side of the processing space, wherein the susceptor is divided along a direction perpendicular to the flow direction of the process gas.

[0008] Here, the susceptor comprises a body portion on which the substrate is placed and wing portions that are divided from the body portion and disposed on both sides of the body portion, and the body portion and the wing portions may be divided along a direction perpendicular to the flow direction of the process gas.

[0009] In addition, a support bar supporting the body portion and the wing portion may be further provided.

[0010] Furthermore, the support bar may be provided with an extension that supports the body part.

[0011] In addition, an opening is formed in the body portion, and a mounting portion may be further provided for being inserted into and accommodated in the opening and for the substrate to be seated thereon.

[0012] Meanwhile, a first inclined portion may be formed at the edge of the above-mentioned seating portion, and a second inclined portion on which the first inclined portion is seated may be formed at the opening.

[0013] According to the present invention having the above-described configuration, bending or cracking of the susceptor can be reduced by dividing the susceptor on which the substrate is placed into a plurality of members.

[0014] In addition, according to the present invention, the amount of deformation of the susceptor caused by high temperature can be reduced by dividing the susceptor in a direction perpendicular to the flow direction of the process gas.

[0015] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention,

[0016] FIG. 2 is a perspective view illustrating a susceptor according to one embodiment,

[0017] FIG. 3 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to another embodiment of the present invention,

[0018] FIG. 4 is a perspective view illustrating a susceptor according to another embodiment.

[0019] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0020] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0021] Referring to FIG. 1, the chemical vapor deposition apparatus (1000) may be equipped with a chamber (100). Various components may be provided in the chamber (100).

[0022] A receiving space (110) is provided on the inside of the chamber (100), and an inner chamber (300) may be provided in the receiving space (110).

[0023] A gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312).

[0024] The above gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) for supplying gas may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0025] Meanwhile, an inner chamber (300) may be provided inside the chamber (100), and a processing space (312) for the substrate (W) may be provided inside the inner chamber (300). By adopting a so-called double chamber structure in this way, the possibility of particle contamination on the substrate (W) can be reduced, and the process on the substrate (W) can be carried out more smoothly.

[0026] One side of the inner chamber (300) is connected to the gas inlet pipe (220), so that process gas, etc. can be supplied through the gas inlet pipe (220).

[0027] Additionally, the inner chamber (300) can serve as a thermal insulation member. That is, the inner chamber (300) is positioned to surround the susceptor assembly (330) described later and may be composed of carbon felt or graphite felt, etc. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, etc.

[0028] In this way, when the inner chamber (300) or the heat-blocking member is provided, the heat generated by the heater (340) of the susceptor assembly (330) is not radiated to the outside of the inner chamber (300), thereby allowing the processing space (312) to be heated more effectively.

[0029] Specifically, a satellite (326) on which the substrate (W) is placed is placed inside the inner chamber (300), and a susceptor assembly (330) for heating the substrate (W) and an upper plate (310) provided on the upper part of the susceptor assembly (330) inside the inner chamber (300) and providing a processing space between the susceptor assembly (330) and the upper plate (310) for processing the substrate (W) may be provided.

[0030] Additionally, the susceptor assembly (330) may be provided with a susceptor (320) on which a satellite (326) on which the substrate (W) is placed is placed, and a heater (340) for heating the susceptor (320). A cover (350) surrounding the satellite (326) may be provided on the upper surface of the susceptor (320). Additionally, although not shown in the drawing, it is also possible to omit the cover (350) and form a concave portion on the upper surface of the susceptor (320), into which the satellite (326) is inserted.

[0031] Additionally, the substrate (W) may be seated on the satellite ((326) while seated on a ring member (not shown).

[0032] The chemical vapor deposition apparatus (1000) according to the present invention may be an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and may grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W) by supplying process gas, etc. from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312).

[0033] Meanwhile, as described above, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (W), the process temperature may correspond to a high temperature of approximately 1600 degrees or higher. Accordingly, the upper plate (310), susceptor (320), and cover (350) constituting the processing space (312) can use a material such as graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide produced by CVD sintering, thereby increasing thermal stability and thermal conductivity, allowing the substrate to be heated efficiently and power consumption to be reduced.

[0034] The processing space (312) can be provided between the aforementioned upper plate (310) and the susceptor (320).

[0035] In addition, a satellite (326) on which the substrate (W) is placed can be placed on the upper surface of the susceptor (320).

[0036] Meanwhile, when the satellite (326) is seated on the upper surface of the susceptor (320), the satellite (326) may be rotatably provided with respect to the susceptor (320).

[0037] That is, a gas passage (not shown) may be further provided that penetrates the susceptor (320) and connects to the upper surface of the susceptor (320) adjacent to the lower surface of the satellite (326). Floating gas, etc., can be supplied toward the lower surface of the satellite (326) through the gas passage to rotate the satellite (326).

[0038] During the process on the substrate (W), the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).

[0039] Meanwhile, a gas exhaust pipe (400) for exhausting gas from the processing space (312) may be connected to the other side of the inner chamber (300). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas from the processing space (312) to the outside of the chamber (100).

[0040] Additionally, the inner chamber (300) may be equipped with a heater (340) for heating the substrate (W) and the processing space (312) to a process temperature. The heater (340) may be provided at the bottom of the susceptor (320) and may be composed of an induction heating coil.

[0041] If the heater (340) is configured as an induction heating coil, it can be used semi-permanently after installation, thus having advantages in terms of maintenance and equipment operation costs.

[0042] Meanwhile, as described above, when the susceptor (320) and the substrate (W) are heated by the heater (340), the high temperature of the heater (340) may cause bending or cracking in the susceptor (320). It is confirmed that this phenomenon occurs frequently when the susceptor (320) is formed as a single member and is arranged to be extended along the direction of the process gas.

[0043] In order to solve these problems, the susceptor (320) is not configured as a single component but is divided into multiple components.

[0044] FIG. 2 is a perspective view illustrating the susceptor (320) according to one embodiment.

[0045] Referring to FIGS. 1 and 2, the susceptor (320) may have a body portion (321) on which the substrate (W) is placed, and wing portions (324, 325) that are divided from the body portion (321) and disposed on both sides of the body portion (321). That is, in this embodiment, the susceptor (320) may be divided into three parts.

[0046] In this case, the body portion (321) and the wing portions (324, 325) may be divided along a direction perpendicular to the flow direction of the process gas.

[0047] That is, the susceptor (320) is not composed of a single member that extends along the flow direction of the process gas, but can be divided along a direction perpendicular to the flow direction of the process gas.

[0048] The above body part (321) may be fitted with the substrate (W) or the satellite (326) on which the substrate (W) is mounted.

[0049] Meanwhile, a pair of wing portions (324, 325) may be disposed on both sides of the body portion (321). For example, a first wing portion (324) disposed upstream in the direction of flow of the process gas and a second wing portion (325) disposed downstream in the direction of flow of the process gas may be provided.

[0050] For example, the first wing portion (324) may be positioned below the first support portion (524) that supports the gas inlet pipe (220). Furthermore, the second wing portion (325) may be positioned below the second support portion (525) that supports the gas exhaust pipe (400).

[0051] When the above susceptor (320) is divided into the body part (321) and the wing part (324, 325), a support bar (512, 514) that supports the body part (321) and the wing part (324, 325) may be provided.

[0052] The support bars (512, 514) may be composed of multiple units and may support the wing portions (324, 325). Additionally, an extension portion (513, 515) is provided at the upper end of the support bars (512, 514), and the body portion (321) may be supported by the extension portion (513, 515).

[0053] Meanwhile, FIG. 3 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (2000) according to another embodiment of the present invention, and FIG. 4 is a perspective view illustrating the susceptor (1320) in FIG. 3. In FIG. 3 and FIG. 4, the same reference numerals are used for components identical to those in the previously described embodiment.

[0054] Referring to FIGS. 3 and 4, in this embodiment, the susceptor (1320) may be divided into four parts. That is, an opening (1322) is formed in the body part (1321) of the susceptor (1320), and a seating part (1328) may be provided that is inserted into and accommodated in the opening (1322) and on which the substrate (W) is seated.

[0055] That is, in the case of the present embodiment, the mounting portion (1328) may be divided and mounted on the body portion (1321). The substrate (W) or the satellite (326) on which the substrate (W) is mounted may be mounted on the upper surface of the mounting portion (1328).

[0056] In this case, a first inclined portion (1329) is formed at the edge of the above-mentioned seating portion (1328), and a second inclined portion (1323) on which the first inclined portion (1329) is seated may be formed at the above-mentioned opening (1322).

[0057] For example, the first inclined portion (1329) may be formed at the lower edge of the above-mentioned seating portion (1328). Additionally, the second inclined portion (1323) may be formed at the lower part of the inner wall of the above-mentioned opening (1322).

[0058] Accordingly, when the above-mentioned seating portion (1328) is inserted into the above-mentioned opening (1322), the above-mentioned first inclined portion (1329) can be seated and supported on the above-mentioned second inclined portion (1323).

[0059] Meanwhile, the inventors of the present invention conducted experiments on the amount of deformation caused by heating of a susceptor (320, 1320) according to an embodiment of the present invention and a susceptor according to a comparative example.

[0060] According to the experimental results, when the susceptor was formed as a single member (comparative example), the amount of deformation due to the bending phenomenon of the susceptor was approximately 4.93 mm.

[0061] On the other hand, in the case of the body part (321) of the susceptor divided into three parts according to the present invention, the amount of deformation due to the bending phenomenon of the susceptor was approximately 2.58 mm, and it can be seen that the degree of bending is reduced by approximately 47.7% compared to the comparative example.

[0062] In addition, in the case of the body part (1321) of the susceptor divided into four parts according to the present invention, the amount of deformation due to the bending phenomenon of the susceptor was approximately 2.10 mm, and it can be seen that the degree of bending is reduced by approximately 57.4% compared to the comparative example.

[0063] Ultimately, in the case of the susceptor (320, 1320) according to the present invention, even when heated by the heater (340), the temperature variation can be reduced to improve temperature uniformity, and accordingly, the amount of deformation can be reduced.

[0064] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may modify and change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims below. Therefore, if a modified embodiment basically includes the components of the claims of the present invention, it should be considered to be included within the technical scope of the present invention.

[0065] According to the present invention, bending or cracking of the susceptor can be reduced by dividing the susceptor on which the substrate is placed into a plurality of members.

Claims

1. Chamber; A susceptor provided inside the chamber, on which the substrate is placed and which heats the substrate; An upper plate provided on the inner side of the chamber and on the upper side of the susceptor, providing a processing space between the susceptor and the upper plate for processing the substrate; and A gas supply unit that supplies process gas from the side of the above processing space; is provided, A chemical vapor deposition apparatus characterized in that the above-mentioned susceptor is divided along a direction perpendicular to the flow direction of the process gas.

2. In Paragraph 1, The above susceptor has a body portion on which the substrate is seated, and wing portions that are divided from the body portion and disposed on both sides of the body portion. A chemical vapor deposition apparatus characterized in that the body portion and the wing portion are divided along a direction perpendicular to the flow direction of the process gas.

3. In Paragraph 2, A chemical vapor deposition apparatus characterized by further comprising a support bar that supports the body portion and the wing portion.

4. In Paragraph 3, The above support bar is A chemical vapor deposition apparatus characterized by having an extension portion that supports the above-mentioned body portion.

5. In Paragraph 2, An opening is formed in the above body part, and A chemical vapor deposition apparatus characterized by further comprising a mounting portion that is inserted into and accommodated in the above-mentioned opening and on which the above-mentioned substrate is mounted.

6. In Paragraph 5, A chemical vapor deposition apparatus characterized by having a first inclined portion formed at the edge of the above-mentioned seating portion, and a second inclined portion formed at the opening on which the first inclined portion is seated.

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