Chemical vapor deposition apparatus
The chemical vapor deposition apparatus addresses damage and contamination issues by using a double chamber structure with purge gas supply channels to control temperature and gas flow, ensuring component longevity and cleanliness.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- TES CO LTD
- Filing Date
- 2025-12-03
- Publication Date
- 2026-07-02
AI Technical Summary
High process temperatures during silicon carbide film deposition can cause damage to internal components of the chemical vapor deposition apparatus due to leakage of process gases, particularly in areas without gas flow, and result in particle contamination on the upper plate.
A chemical vapor deposition apparatus with a double chamber structure, including a susceptor and an inner chamber, uses purge gas supply channels to induce a gas flow and prevent damage to the upper plate by supplying purge gas to the inner space, thereby controlling temperature uniformity and preventing particle adherence.
Prevents damage to the upper plate and maintains uniform temperature, reducing particle contamination and extending the lifespan of the apparatus components.
Smart Images
Figure KR2025020516_02072026_PF_FP_ABST
Abstract
Description
Chemical Vapor Deposition System
[0001] The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of preventing damage to internal components of equipment due to high process temperatures in equipment for depositing silicon carbide (SiC) films, etc., on a substrate.
[0002] Recently, the demand for SiC power devices has surged, and the related market is expected to continue growing. These SiC power devices can be fabricated by placing a substrate in a reaction chamber and growing a silicon carbide (SiC) single crystal on a substrate mounted on a susceptor through thermal decomposition by supplying a mixture of process gas and carrier gas into the chamber.
[0003] In this case, the substrate is placed on the satellite and positioned on the susceptor, and the satellite rotates so that the process on the substrate can proceed. Additionally, the susceptor is heated by a heater to heat the substrate.
[0004] Meanwhile, when depositing a silicon carbide (SiC) film on the upper surface of a substrate, the process temperature can be high, corresponding to approximately 1600 degrees or higher. Due to such high process temperatures, the temperature of components adjacent to the processing space where the substrate is placed can also be heated to high temperatures.
[0005] In this case, if process gases such as hydrogen (H2) supplied to the processing space where the substrate is placed leak to adjacent components, damage to those components may occur. In particular, for components placed in a space where there is no gas flow, damage can easily occur because it is difficult to exhaust process gases if they enter.
[0006] The present invention aims to provide a chemical vapor deposition apparatus capable of preventing damage to an upper plate forming a processing space for a substrate and further preventing particles from adhering to the upper plate in order to solve the above-mentioned problems.
[0007] The objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus characterized by comprising: a chamber; an inner chamber provided inside the chamber; a susceptor provided inside the inner chamber on which a substrate is placed and which heats the substrate; an upper plate provided above the susceptor and which provides a processing space between the susceptor and the upper plate for processing the substrate; an upper heater provided above the upper plate in the inner space of the inner chamber to heat the upper plate; and at least one purge gas supply channel for supplying purge gas toward the inner space.
[0008] Here, a gas supply unit for supplying process gas from the side of the processing space is further provided, and the purge gas supply path may be provided with at least one of a first purge gas supply path that supplies the purge gas toward the center of the upper plate and a second purge gas supply path that supplies the purge gas toward the upper plate of the inlet section into which the process gas is introduced.
[0009] In addition, a through hole is formed in the upper plate through which a sensing sensor for detecting the temperature of the substrate passes, and at least one of the purge gas supply channels can supply the purge gas toward the through hole.
[0010] Furthermore, the purge gas supply path can penetrate the inner chamber and be connected to the inner space.
[0011] Meanwhile, an exhaust port may be formed in the inner chamber to exhaust the purge gas from the inner space.
[0012] According to the present invention having the above-described configuration, a purge gas is supplied to the inner space of the upper part of the upper plate to induce a gas flow, thereby preventing the high-temperature upper plate from being damaged by the process gas.
[0013] Furthermore, according to the present invention, the temperature of the upper plate can be uniformly controlled to uniformly heat the processing space, and the attachment of particles, etc. to the upper surface of the upper plate can also be prevented.
[0014] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention,
[0015] FIG. 2 is a plan view of the upper heater and upper plate on the inner side of the inner chamber,
[0016] FIG. 3 is a cross-sectional view along the line 'Ⅲ-Ⅲ' of FIG. 2,
[0017] Figure 4 is a cross-sectional view along the line 'IV-IV' of Figure 2.
[0018] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.
[0019] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.
[0020] Referring to FIG. 1, the chemical vapor deposition apparatus (1000) may be equipped with a chamber (100). Various components may be provided in the chamber (100).
[0021] A receiving space (110) is provided on the inside of the chamber (100), and an inner chamber (300) may be provided in the receiving space (110).
[0022] A gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312) described later.
[0023] The above gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) for supplying gas may be formed in the gas inlet pipe (220) located outside the chamber (100).
[0024] Meanwhile, an inner chamber (300) may be provided inside the chamber (100), and a processing space (312) for the substrate (W) may be provided inside the inner chamber (300). By adopting a so-called double chamber structure in this way, the possibility of particle contamination on the substrate (W) can be reduced, and the process on the substrate (W) can be carried out more smoothly.
[0025] One side of the inner chamber (300) is connected to the gas inlet pipe (220), so that process gas, etc. can be supplied through the gas inlet pipe (220).
[0026] Additionally, the inner chamber (300) can serve as a thermal insulation member. That is, the inner chamber (300) is positioned to surround the susceptor assembly (330) described later and may be composed of carbon felt or graphite felt, etc. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, etc.
[0027] In this way, when the inner chamber (300) or the heat-blocking member is provided, the heat generated by the lower heater (340) of the susceptor assembly (330) is not radiated to the outside of the inner chamber (300), thereby allowing the processing space (312) to be heated more effectively.
[0028] Specifically, a satellite (326) on which the substrate (W) is placed is placed inside the inner chamber (300), and a susceptor assembly (330) for heating the substrate (W) and an upper plate (310) provided on the upper part of the susceptor assembly (330) inside the inner chamber (300) and providing a processing space between the susceptor assembly (330) and the upper plate (310) for processing the substrate (W) may be provided.
[0029] Additionally, the susceptor assembly (330) may be provided with a susceptor (320) on which a satellite (326) on which the substrate (W) is placed is placed, and a lower heater (340) for heating the susceptor (320).
[0030] A cover (350) surrounding the satellite (326) may be provided on the upper surface of the susceptor (320). Additionally, although not shown in the drawing, it is also possible to omit the cover (350) and form a recess on the upper surface of the susceptor (320), with the satellite (326) inserted into the recess.
[0031] Additionally, the substrate (W) may be seated on the satellite ((326) while seated on a ring member (not shown).
[0032] The chemical vapor deposition apparatus (1000) according to the present invention may be an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and may grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W) by supplying process gas, etc. from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312).
[0033] Meanwhile, as described above, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (W), the process temperature may correspond to a high temperature of approximately 1600 degrees or higher. Accordingly, the upper plate (310), susceptor (320), and cover (350) constituting the processing space (312) can use a material such as graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide produced by CVD sintering, thereby increasing thermal stability and thermal conductivity, allowing the substrate to be heated efficiently and power consumption to be reduced.
[0034] The processing space (312) can be provided between the aforementioned upper plate (310) and the susceptor (320).
[0035] In addition, a satellite (326) on which the substrate (W) is placed can be placed on the upper surface of the susceptor (320).
[0036] Meanwhile, when the satellite (326) is seated on the upper surface of the susceptor (320), the satellite (326) may be rotatably provided with respect to the susceptor (320).
[0037] That is, a gas passage (not shown) may be further provided that penetrates the susceptor (320) and connects to the upper surface of the susceptor (320) adjacent to the lower surface of the satellite (326). Floating gas, etc., can be supplied toward the lower surface of the satellite (326) through the gas passage to rotate the satellite (326).
[0038] During the process on the substrate (W), the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).
[0039] Meanwhile, a gas exhaust pipe (400) for exhausting gas from the processing space (312) may be connected to the other side of the inner chamber (300). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas from the processing space (312) to the outside of the chamber (100).
[0040] Additionally, the inner chamber (300) may be equipped with a lower heater (340) for heating the substrate (W) and the processing space (312) to a process temperature. The lower heater (340) may be provided at the bottom of the susceptor (320) and may be composed of an induction heating coil.
[0041] If the lower heater (340) is configured as an induction heating coil, it can be used semi-permanently after installation, thus having advantages in terms of maintenance and equipment operation costs.
[0042] Meanwhile, the substrate processing device (1000) may further be provided with an upper heater (360) that is positioned on the outside or upper side of the upper plate (310) and surrounds the upper plate (310).
[0043] The upper heater (360) may be positioned to surround the upper part of the upper plate (310) or to surround the entire outer side of the upper plate (310). For example, the upper heater (360) may be provided in the inner space (314) of the inner chamber (300) on the upper part of the upper plate (310).
[0044] Additionally, the upper heater (360) may be composed of, for example, a resistance heating heater or a halogen lamp, but is not limited thereto.
[0045] When the upper heater (360) is configured as a resistance heating heater, the upper heater (360) may be spaced apart from the upper plate (310) to heat the upper plate (310) by convection or radiation. Additionally, the upper heater (360) may be in direct contact with the upper plate (310) or connected to it by a separate heat transfer plate to transfer heat to the upper plate (310) by conduction.
[0046] Heating is performed at the bottom of the susceptor (320) by the lower heater (340), and heating is performed at the top or side of the upper plate (310) by the upper heater (360), thereby allowing the substrate (W) and the processing space (312) to be heated more efficiently.
[0047] Meanwhile, in the above configuration, when the substrate (W) is heated by the upper heater (360) and the lower heater (340), a sensor (not shown) for measuring the temperature of the substrate (W) may be provided, and the sensor may be positioned through the through hole (311) of the upper plate (310).
[0048] Since the substrate (W) is positioned approximately in the center of the susceptor (320), the through hole (311) can also be formed approximately in the center of the upper plate (310).
[0049] The temperature of the substrate (W) can be measured by the sensor above to control the operating temperature of the upper heater (360) and the lower heater (340).
[0050] Meanwhile, in the above configuration, the upper plate (310) is heated by the upper heater (360) and serves to heat the lower substrate (W) or the processing space (312). However, as described above, the temperature of the processing process for the substrate (W) is very high, so when the upper plate (310) is heated by the upper heater (360), the temperature of the upper plate (310) may also be very high.
[0051] In this case, if a process gas such as hydrogen (H2) supplied to the processing space (312) flows into the inner space (314) through the through hole (311), damage may occur to the upper surface of the upper plate (310). In particular, since the inner space (314) is a space where there is no gas flow, damage may easily occur because it is difficult to exhaust the process gas if it flows in.
[0052] Accordingly, the present invention may be provided with at least one purge gas supply channel (301) that supplies purge gas toward the inner space (314).
[0053] That is, by supplying purge gas to the inner space (314) surrounded by the upper plate (310) and the inner chamber (300), the flow of gas within the inner space (314) is induced to prevent damage to the upper plate (310), thereby extending the lifespan of the upper plate (310). In addition, the temperature of the upper plate (310) can be made uniform, and particles that may accumulate on the upper surface of the upper plate (310) can be removed.
[0054] FIG. 2 is a plan view of the upper heater (360) and the upper plate (310) inside the inner chamber (300), FIG. 3 is a cross-sectional view along the line 'Ⅲ-Ⅲ' of FIG. 2, and FIG. 4 is a cross-sectional view along the line 'Ⅳ-Ⅳ' of FIG. 2.
[0055] Referring to FIGS. 2 to 4, the purge gas supply channel (301) may be provided with at least one of a first purge gas supply channel (302) that supplies the purge gas toward the center of the upper plate (310) and a second purge gas supply channel (304A, 304B) that supplies the purge gas toward the upper plate (310) of the inlet portion into which the process gas is introduced. Furthermore, at least one of the purge gas supply channels (301) may supply the purge gas toward the through hole (311).
[0056] Below, we will examine the case where both the first purge gas supply channel (302) and the second purge gas supply channel (304A, 304B) are provided.
[0057] First, the purge gas supply channel (301) may be provided with a first purge gas supply channel (302) that supplies the purge gas toward the center of the upper plate (310).
[0058] The first purge gas supply channel (302) may pass through the inner chamber (300) and communicate with the inner space (314). The first purge gas supply channel (302) may supply the purge gas toward the center of the upper plate (310). In this case, the center of the upper plate (310) corresponds to a position on a plane that corresponds to the through hole (311) and the approximately center of the substrate (W).
[0059] Accordingly, the purge gas supplied by the first purge gas supply channel (302) is supplied toward the center of the upper plate (310), and can block process gas, etc. from flowing into the inner space (314) through the through hole (311).
[0060] Meanwhile, an exhaust port (306) for exhausting the purge gas of the inner space (314) may be formed in the inner chamber (300).
[0061] For example, the exhaust port (306) may be formed on the other side of the inner chamber (300) to which the gas exhaust pipe (400) is connected, or on the side of the inner chamber (300) where the process gas is discharged from the inner chamber (300). The exhaust port (306) may connect the inner space (314) and the outside of the inner chamber (300) to each other.
[0062] Accordingly, the purge gas supplied to the inner space (314) through the first purge gas supply channel (302) can be discharged to the outside of the inner chamber (300) through the exhaust port (306). In this case, the flow of the purge gas in the inner space (314) can be approximately parallel to the flow direction of the process gas.
[0063] Meanwhile, the purge gas supply channel (301) may further include a second purge gas supply channel (304A, 304B) that supplies the purge gas toward the upper plate (310) of the inlet section into which the process gas is introduced.
[0064] The second purge gas supply passage (304A, 304B) may be connected to one side of the inner chamber (300) or to the inner chamber (300) on the side of the inlet where the process gas is introduced. In the case of the present embodiment, the second purge gas supply passage (304A, 304B) is configured as a pair, but such a number is merely an example and can be appropriately adjusted.
[0065] The purge gas supplied through the second purge gas supply channel (304A, 304B) flows along the inner space (314) toward the exhaust port (306) and can be exhausted through the upper heater (360) and the upper surface of the upper plate (310).
[0066] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may modify and change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims below. Therefore, if a modified embodiment basically includes the components of the claims of the present invention, it should be considered to be included within the technical scope of the present invention.
[0067] According to the present invention, by supplying purge gas into the inner space of the upper part of the upper plate to induce a gas flow, it is possible to prevent the high-temperature upper plate from being damaged by process gas.
Claims
1. Chamber; An inner chamber provided on the inner side of the above chamber; A susceptor provided on the inner side of the above inner chamber, on which the substrate is placed and which heats the substrate; An upper plate provided on the upper part of the susceptor, providing a processing space between the susceptor and the upper plate in which the substrate is processed; An upper heater provided in the inner space of the inner chamber at the upper part of the upper plate to heat the upper plate; and A chemical vapor deposition apparatus characterized by having at least one purge gas supply channel for supplying purge gas toward the inner space.
2. In Paragraph 1, Further equipped with a gas supply unit that supplies process gas from the side of the above processing space, The above purge gas supply path A chemical vapor deposition apparatus characterized by having at least one of a first purge gas supply channel that supplies the purge gas toward the central part of the upper plate and a second purge gas supply channel that supplies the purge gas toward the upper plate of the inlet part into which the process gas is introduced.
3. In Paragraph 2, A through hole is formed in the upper plate through which a sensing sensor that detects the temperature of the substrate passes, and A chemical vapor deposition apparatus characterized in that at least one of the above purge gas supply channels supplies the purge gas toward the above through hole.
4. In Paragraph 1, A chemical vapor deposition apparatus characterized in that the above purge gas supply path penetrates the above inner chamber and is connected to the above inner space.
5. In Paragraph 1, A chemical vapor deposition apparatus characterized by having an exhaust port formed in the inner chamber for exhausting the purge gas of the inner space.