Novel precursor for forming metal-containing thin film and method for forming metal-containing thin film using same

Abstract

The present invention relates to a novel precursor for forming a metal-containing thin film and a method for forming a metal-containing thin film using same, and more particularly, to a novel precursor for forming a metal-containing thin film, which is capable of forming a high-quality thin film through a novel chemical structure including a lanthanide metal, yttrium (Y), or scandium (Sc) as a central metal and fluorine in an amidinate ligand, and a method for forming a metal-containing thin film using same.

Description

Novel precursor for forming metal-containing thin films and method for forming metal-containing thin films using the same

[0001] The present invention relates to a novel precursor for forming a metal-containing thin film and a method for forming a metal-containing thin film using the same. More specifically, the invention relates to a novel precursor for forming a metal-containing thin film capable of forming a high-quality thin film through a novel chemical structure comprising a lanthanide metal, yttrium (Y), or scandium (Sc) as a central metal and containing fluorine in an amidinate ligand, and a method for forming a metal-containing thin film using the same.

[0002] Due to the miniaturization of semiconductor devices, there is a trend toward technology shifting toward metal gates and high-dielectric constant transistors; consequently, it is difficult to ensure reliability using conventional silicon-based gate dielectrics. For this reason, technologies for forming high-quality thin films based on materials containing various core metals are being developed.

[0003] Meanwhile, in semiconductor etching and plasma deposition processes, yield can be reduced due to particles originating from equipment and components. As the application of etching and plasma processes increases in response to ultra-fine linewidth processes, and as the difficulty of process technology rises—such as through the use of high-power plasma processes—problems are emerging where production efficiency is significantly declining due to yield reduction caused by particles originating from equipment and components. Furthermore, showerhead equipment components and gas injectors also react with fluorine compound-based gases during the process, leading to AlF on the surfaces of semiconductor equipment and components. xVarious problems are arising due to the transition to fine processes, such as the generation of particles of a certain shape. When particles are generated during the process, productivity may decrease due to frequent external cleaning caused by contamination of chamber components; furthermore, the generation of particles and by-products during the process may cause changes in the deposition rate, leading to decreased process efficiency and an increased defect rate; and unit costs may increase due to frequent replacements resulting from reduced component cycles.

[0004] To suppress such equipment and component-derived particles, durable equipment and components capable of withstanding extreme environments are required, and for this purpose, highly corrosion-resistant ceramic coatings are necessary.

[0005] The present invention has been devised in consideration of the prior art described above, and aims to provide a precursor comprising a novel metal-containing thin film forming compound that can be used as a thin film deposition or coating material related to semiconductor devices.

[0006] In addition, the present invention aims to provide a method for forming a metal-containing thin film capable of forming a high-quality metal-containing thin film by using a precursor comprising a novel compound for forming a metal-containing thin film, and a semiconductor device, equipment, or component comprising said thin film.

[0007] The objectives of the present invention are not limited to those mentioned above, and other objectives and advantages of the present invention not mentioned may be understood from the following description and will be more clearly understood by the embodiments of the present invention. Furthermore, it will be readily apparent that the objectives and advantages of the present invention can be realized by the means and combinations thereof set forth in the claims.

[0008] To achieve the above objective, according to a first embodiment of the present invention, a precursor for forming a metal-containing thin film comprising a compound represented by the following chemical formula 1 may be provided.

[0009] <Chemical Formula 1>

[0010]

[0011] In the above chemical formula 1, M can be one of lanthanide metals, yttrium (Y), and scandium (Sc), and R 1 to R 5 The groups may be identical or different from each other and may each be independently selected from hydrogen, a C1-C8 straight-chain alkyl group, a C2-C8 straight-chain alkenyl group, a C3-C8 branched alkyl group, a C3-C8 cyclic alkyl group, a C3-C8 branched alkenyl group, and a C3-C8 cyclic alkenyl group, and at least one of R1 to R3 may be selected as a C1-C8 straight-chain alkyl group, wherein the alkyl group may include one or more fluorine (F) atoms.

[0012] According to a second aspect of the present invention, a method for forming a metal-containing thin film can be provided, comprising: a first step of preparing a substrate in a reactor; a second step of forming a metal-containing thin film by depositing a precursor for forming a metal-containing thin film according to a first aspect of the present invention on the surface of the substrate; and a third step of reacting the metal-containing thin film with a reactive gas.

[0013] According to a third aspect of the present invention, a semiconductor device comprising a metal-containing thin film manufactured by the method for forming a metal-containing thin film according to the second aspect of the present invention can be provided.

[0014] The novel metal-containing thin film forming compound according to the present invention can form a high-quality thin film when used as a precursor due to its chemical properties, such as excellent structural and thermal stability. In addition, the novel metal-containing thin film forming compound according to the present invention has the advantage of being able to form coatings with high plasma resistance and corrosion resistance, such as Y2O3 and YOF (Yittrium Oxy-Fluoride).

[0015] In addition to the effects described above, the effects of the present invention are described together with the details for implementing the invention below.

[0016] FIG. 1 shows bis(ethylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium, a compound prepared in Example 1 of the present invention. 1 This is a graph of the H-NMR analysis results.

[0017] FIG. 2 shows bis(ethylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium, a compound prepared in Example 1 of the present invention. 19 This is a graph of the F-NMR analysis results.

[0018] Figure 3 is a graph of the TGA analysis results of bis(ethylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium, a compound prepared in Example 1 of the present invention.

[0019] Figure 4 is a graph of the DSC analysis results of bis(ethylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium, a compound prepared in Example 1 of the present invention.

[0020] The aforementioned objectives, features, and advantages are described in detail below with reference to this specification, and accordingly, a person skilled in the art to which the present invention pertains will be able to easily implement the technical concept of the present invention. In describing the present invention, detailed descriptions of known technologies related to the present invention are omitted if it is determined that such descriptions may unnecessarily obscure the essence of the present invention.

[0021] Where terms such as "comprising," "having," "containing," "arranging," or "having" are used for a component in this specification, other parts may be added unless "only" is used. Where a component is expressed in the singular, it includes cases where it is included in the plural unless specifically stated otherwise.

[0022] Throughout this specification, unless specifically stated otherwise, each component may be singular or plural.

[0023] Throughout this specification, "A and / or B" means A, B, or A and B unless specifically stated otherwise, and "C to D" means C or more and D or less unless specifically stated otherwise.

[0024] Unless otherwise specifically stated in this specification, the standard of any unit is interpreted to mean "weight."

[0025] In interpreting the components in this specification, they are interpreted to include an error range even if there is no separate explicit description.

[0026] The present invention will be described in more detail below. Terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings, but should be interpreted in a meaning and concept consistent with the technical spirit of the present invention, based on the principle that the inventor can appropriately define the concept of the terms to best describe his invention.

[0027] The precursor for forming a metal-containing thin film according to the present invention is capable of forming a metal-containing thin film comprising a lanthanide metal, yttrium (Y), or scandium (Sc), and is characterized by comprising a compound represented by the following chemical formula 1.

[0028] <Chemical Formula 1>

[0029]

[0030] In the above chemical formula 1, M can be one of lanthanide metals, yttrium (Y), and scandium (Sc), and R 1 to R 5The groups may be identical or different from each other and may each be independently selected from hydrogen, a C1-C8 straight-chain alkyl group, a C2-C8 straight-chain alkenyl group, a C3-C8 branched alkyl group, a C3-C8 cyclic alkyl group, a C3-C8 branched alkenyl group, and a C3-C8 cyclic alkenyl group, and the R 1 to R 3 At least one of them may be selected as a C1-C8 straight-chain alkyl group, wherein the alkyl group may include one or more fluorine (F) atoms.

[0031] The compound represented by the above chemical formula 1 can exemplify various chemical structures.

[0032] According to one example of the present invention, M may be a lanthanide metal, yttrium, or scandium. The lanthanide metal is one of 15 elements including lanthanum (La) with atomic number 57 to lutetium (Lu) with atomic number 71, and means lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

[0033] According to one example of the present invention, M may be selected as yttrium.

[0034] According to one example of the present invention, the R 1 and R 2 can be selected as identical to each other.

[0035] According to one example of the present invention, the R 1 and R 2 can be selected as a C1-C8 straight-chain alkyl group, wherein the alkyl group may include one or more fluorine (F) atoms. For example, R 1 and R 2 It can be selected as a trifluoroethyl group.

[0036] According to one example of the present invention, the R 3 It can be a C1-C8 straight-chain alkyl group or a C3-C8 alkenyl group, for example, a C2-C8 straight-chain alkyl group.

[0037] According to one example of the present invention, R 4 and R 5 It can be selected from hydrogen, C1-C8 straight-chain alkyl groups, C3-C8 branched alkyl groups and C3-C8 alkenyl groups, and, for example, can be selected as an ethyl group.

[0038] According to one example of the present invention, the R 4 and R 5 They can be identical to each other.

[0039] According to one example of the present invention, the R 4 and R 5 Each can be independently selected from hydrogen and C1-C8 straight-chain alkyl groups.

[0040] According to one example of the present invention, the specific compound represented by Formula 1 is bis(ethylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium [(EtCp)2Y(CF3Me-Et-AMD)];

[0041] Bis(ethylcyclopentadienyl)(N,N'-bis(trifluoromethyl)formimidate)yttrium[(EtCp)2Y(CF3-H-AMD)];

[0042] Bis(ethylcyclopentadienyl)(N,N'-bis(trifluoromethyl)acetimidate)yttrium[(EtCp)2Y(CF3-Me-AMD)];

[0043] Bis(ethylcyclopentadienyl)(N,N'-bis(trifluoromethyl)propionimidate)yttrium[(EtCp)2Y(CF3-Et-AMD)];

[0044] Bis(ethylcyclopentadienyl)(2,2,2-trifluoro-N,N'-bis(trifluoromethyl)acetimidate)yttrium[(EtCp)2Y(CF3-CF3-AMD)];

[0045] Bis(ethylcyclopentadienyl)(4-fluoro-1,3-bis(trifluoromethyl)amidineto)yttrium[(EtCp)2Y(CF3-F-AMD)];

[0046] Bis(ethylcyclopentadienyl)(N,N'-bis(2,2,2-trifluoroethyl)formimidate)yttrium[(EtCp)2Y(MeCF3-H-AMD)];

[0047] Bis(ethylcyclopentadienyl)(N,N'-bis(2,2,2-trifluoroethyl)acetimidate)yttrium[(EtCp)2Y(MeCF3-Me-AMD)];

[0048] Bis(ethylcyclopentadienyl)(N,N'-bis(2,2,2-trifluoroethyl)propionimidate)yttrium[(EtCp)2Y(MeCF3-Et-AMD)];

[0049] Bis(ethylcyclopentadienyl)(2,2,2-trifluoro-N,N'-bis(trifluoroethyl)acetimidate)yttrium[(EtCp)2Y(MeCF3-CF3-AMD)];

[0050] Bis(ethylcyclopentadienyl)(4-fluoro-1,3-bis(trifluoroethyl)amidineto)yttrium[(EtCp)2Y(MeCF3-F-AMD)];

[0051] Bis(ethylcyclopentadienyl)(N,N'-bis(1,1,1-trifluoropropane-2-yl)formimidate)yttrium[(EtCp)2Y(CHCH2CF3-H-AMD)];

[0052] Bis(ethylcyclopentadienyl)(N,N'-bis(1,1,1-trifluoropropane-2-yl)acetimidate)yttrium[(EtCp)2Y(CHCH2CF3-Me-AMD)];

[0053] Bis(ethylcyclopentadienyl)(2,2,2-trifluoro-N,N'-bis(1,1,1-trifluoropropane-2-yl)acetimidate)yttrium[(EtCp)2Y(CHCH2CF3-CF3-AMD)];

[0054] Bis(ethylcyclopentadienyl)(2,2,2-trifluoro-N,N'-bis(4-fluoro-1,3-bis(1,1,1-trifluoropropane-2-yl)amidineto)yttrium[(EtCp)2Y(CHCH2CF3-F-AMD)];

[0055] Bis(isopropylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium[(iPrCp)2Y(CF3Me-Et-AMD)];

[0056] Bis(n-propylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium[(nPrCp)2Y(CF3Me-Et-AMD)];

[0057] Bis(n-butylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium[(nBuCp)2Y(CF3Me-Et-AMD)];

[0058] Bis(secbutylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium[(sBuCp)2Y(CF3Me-Et-AMD)]; and

[0059] It may include, but is not limited to, bis(isobutylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium[(iBuCp)2Y(CF3Me-Et-AMD)].

[0060] The precursor for forming a metal-containing thin film according to the present invention utilizes a compound represented by Chemical Formula 1, which includes a chemical structure in which an amidinate ligand containing fluorine is bonded to a central metal atom. Since this provides superior structural and thermal stability compared to metal compounds of the prior art, the desired chemical properties of the precursor can be obtained through the synthesis of the compound represented by Chemical Formula 1. Furthermore, since the film formed using the compound represented by Chemical Formula 1 of the present invention has excellent corrosion resistance, it becomes possible to deposit functional thin films or coating films by applying various deposition process conditions, including corrosion-resistant coating materials for semiconductor equipment.

[0061] According to one example of the present invention, a precursor for forming a metal-containing thin film may include a solvent capable of dissolving or diluting a compound represented by Formula 1, taking into account the conditions and efficiency of the thin film forming process, which means a dissolved state rather than a chemical bond to the metal-containing compound. Non-limiting examples of the solvent may include one or more of C1-C16 saturated or unsaturated hydrocarbons, ketones, esters, glymes, tetrahydrofurans, ethers, and tertiary amines. Examples of C1-C16 saturated or unsaturated hydrocarbons include toluene, pentane, hexane, heptane, etc., and examples of tertiary amines include dimethylethylamine, etc.

[0062] At this time, based on 100 weight% of the precursor for forming a metal-containing thin film, the content of the solvent may be 1 to 99 weight%, for example, 3 to 60 weight%, and more preferably 5 to 40 weight%. By dissolving the metal-containing compound using a solvent in this way, the concentration of metal atoms can be lowered, thereby providing a suitable precursor for various deposition process conditions.

[0063] The compound represented by Chemical Formula 1 of the present invention may be in a liquid state at room temperature, and even if it is in a solid state, it can be converted into a liquid state by dissolving it in a solvent. Since the liquid precursor allows for the application of conventional deposition methods such as the Liquid Delivery System (LDS), the efficiency of the thin film formation process can be significantly improved. This is because, unlike solid precursors, the liquid precursor is advantageous for the uniform supply of the precursor onto the substrate. That is, the metal-containing thin film forming precursor is effective for performing the deposition process because it can apply all methods, such as the volatilization transfer method, which transfers volatilized gas of an organic solvent into the reactor chamber; the direct liquid injection method, which directly injects the liquid precursor composition; or the liquid transfer method, which transfers the precursor composition dissolved in an organic solvent.

[0064] The method for forming a metal-containing thin film according to the present invention can form a thin film composed of a metal, a metal oxide, a metal nitride, a metal oxynitride, or a metal sulfide by forming a thin film on a substrate using the precursor for forming a metal-containing thin film.

[0065] According to the method for forming a metal-containing thin film of the present invention, the method may include: a first step of preparing a substrate in a reactor; a second step of forming a metal-containing thin film by depositing a precursor for forming a metal-containing thin film on the surface of the substrate; and a third step of reacting the metal-containing thin film with a reactive gas, wherein the precursor for forming a metal-containing thin film comprises a compound represented by Formula 1 of the present invention.

[0066] According to one example of the present invention, the material of the substrate comprises a III-V semiconductor material including silicon (Si), germanium (Ge), germanium tin (GeSn), silicon germanium (SiGe), silicon germanium tin (SiGeSn), and silicon carbide (SiC); and silicon oxide (SiO₂). xSilicon-containing dielectric materials such as silicon nitride (Si3N4), silicon oxynitride (SiON), silicon oxycarbide (SiOC), silicon oxycarbide nitride (SiOCN), and silicon carbon nitride (SiCN); hafnium oxide (HfO2), tantalum oxide (Ta2O5), zirconium oxide (ZrO2), titanium oxide (TiO2), and hafnium silicate (HfSiO2). x Dielectric materials including metal oxides such as ) and lanthanum oxide (La2O3); may include, but are not limited to, ceramics, quartz (SiO2), aluminum (Al), steel, metal alloys, alumina (Al2O3), yttria (Y2O3), or plastics suitable for parts in semiconductor manufacturing systems.

[0067] According to one example of the present invention, the second step may involve vaporizing the precursor for forming the metal-containing thin film, transferring it into a reactor, and depositing it.

[0068] According to one example of the present invention, a deposition process can be performed by supplying the precursor for forming a metal-containing thin film to a substrate using a liquid delivery method. By using a liquid delivery system (LDS) to convert the liquid precursor composition into a gaseous phase through a vaporizer and then transferring it onto a substrate for forming a metal-containing thin film, a second deposition process can be performed.

[0069] According to one example of the present invention, the deposition of the second step is not particularly limited as long as it is a process for depositing a precursor for forming a metal-containing thin film on a substrate, and can be performed through an application process selected from, for example, a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma-chemical vapor deposition (HDPCVD) process, atomic layer deposition (ALD) process, and plasma-enhanced atomic layer deposition (PEALD) process, or based thereon.

[0070] According to one example of the present invention, the deposition in the second step may utilize an atomic layer deposition (ALD) process, and since the formation of pores can be reduced compared to a physical vapor deposition (PVD) process or spray coating, it can be used as a ceramic coating film material with high corrosion resistance.

[0071] According to one example of the present invention, the thin film formation of the second step may be performed by supplying the metal-containing thin film forming precursor to a substrate and applying plasma to form a thin film.

[0072] The formation of a metal-containing thin film according to one example of the present invention can be performed at a process temperature of 200°C or higher, for example, in a range of 200°C to 700°C, for example, 200°C to 600°C, for example, 200°C to 500°C, for example, 200°C to 400°C.

[0073] According to one example of the present invention, one or more purge gases may be included in the deposition process of the second step. The purge gas is selected as an inert gas that does not react with the precursor, for purging unconsumed reactants and / or reaction by-products. The purge gas may include one or more of argon (Ar), nitrogen (N2), helium (He), neon (Ne), and hydrogen (H2), but is not limited thereto. At this time, the purge gas may be used to purge within a pressure range of 1 to 5 Torr.

[0074] The present invention can form a thin film of a metal oxide, metal nitride, metal oxynitride, etc. by including a third step of reacting the precursor thin film deposited in the second step with a reactive gas.

[0075] According to one example of the present invention, the reactive gas of the third step may include one or more selected from nitrogen (N2), ammonia (NH3), hydrazine (N2H4), nitrous oxide (N2O), oxygen (O2), water vapor (H2O), ozone (O3), hydrogen peroxide (H2O2), silane (SiH4), hydrogen (H2), and diborane (B2H6), but is not limited thereto. When carried out in the presence of an oxidizing gas such as water vapor, oxygen, ozone, etc., a metal oxide thin film may be formed, and when carried out in the presence of a reducing gas such as hydrogen, ammonia, hydrazine, silane, etc., a metal element or a metal nitride thin film may be formed. Additionally, a metal oxynitride thin film may be formed by mixing the reactants.

[0076] According to one example of the present invention, depending on the type or function of the thin film to be formed, the reactive gas of the third step may include a fluorine source gas. For example, the fluorine source gas may include one or more selected from hydrofluorocarbon (HFC), perfluorocarbon (PFC), sulfur hexafluoride (SF6), HF, and NF3, but is not limited thereto.

[0077] According to one example of the present invention, the third step may be performed by supplying a gaseous reactant containing a reactive gas into a reactor and bringing it into contact with a substrate. In this way, a metal-containing thin film may be formed by bringing a precursor for forming a metal-containing thin film into contact with a substrate, and then a final thin film may be formed by bringing it into contact with a reactive gas.

[0078] According to one example of the present invention, the process of forming the thin film can be performed under chamber pressure conditions of 1 to 1000 mTorr. Additionally, for forming plasma within the chamber, the source power is 500 to 9,000 W, and the bias power is 0 to 5,000 W. Additionally, the bias power may not be applied in some cases.

[0079] According to one example of the present invention, when supplying the precursor for forming the metal-containing thin film, an additional metal precursor may be supplied to improve electrical properties such as the capacitance of the final metal-containing thin film, and the additional metal may be selected as a type different from the metal. The additional metal may include, for example, one or more metals selected from magnesium (Mg), silicon (Si), aluminum (Al), indium (In), tin (Sn), zirconium (Zr), titanium (Ti), germanium (Ge), strontium (Sr), niobium (Nb), barium (Ba), hafnium (Hf), tantalum (Ta), and actinide (Ac) atoms, but is not limited thereto. In addition, the additional metal precursor may be supplied in the form of an alkylamide compound or an alkoxy compound containing the additional metal.

[0080] According to one example of the present invention, the supply of the additional metal precursor may be carried out in the same manner as the supply method of the precursor for forming a metal-containing thin film, and the additional metal precursor may be supplied onto a substrate for forming a thin film together with the precursor for forming a metal-containing thin film, or may be supplied sequentially after the supply of the precursor for forming a metal-containing thin film is completed.

[0081] According to one example of the present invention, the metal-containing thin film forming precursor and optionally additional metal precursor are preferably maintained at a temperature of 50 to 250°C and more preferably at a temperature of 100 to 200°C until they are supplied into a reaction chamber to come into contact with the thin film forming substrate.

[0082] According to one example of the present invention, in addition to plasma treatment, a treatment process by heat treatment or light irradiation may be performed to provide thermal energy for the deposition of a precursor for forming a metal-containing thin film, and this can be carried out according to a conventional method. Preferably, in order to manufacture a thin film having a desired physical state and composition at a sufficient growth rate, it is desirable to carry out the treatment process such that the temperature of the substrate in the reactor becomes 100 to 1,000°C, preferably 100 to 400°C.

[0083] As described above, a series of processes including the introduction of a precursor for forming a metal-containing thin film, the introduction of a reactive gas, and optionally the introduction of an additional metal precursor constitutes one cycle, and by repeating this process one or more times, a desired metal-containing thin film can be formed.

[0084] A metal-containing thin film formed from a precursor for forming a metal-containing thin film comprising a compound represented by Chemical Formula 1 of the present invention serves as a component of an electronic device such as a semiconductor device, and various types of devices can be manufactured based thereon. Semiconductor devices comprising the metal-containing thin film may include memory devices such as 3D-NAND and DRAM, gate electrodes for semiconductors, capacitor electrodes for DRAM, channel materials for TFTs, etc., but are not limited thereto.

[0085] In addition, a metal-containing thin film formed from a precursor for forming a metal-containing thin film comprising a compound represented by Formula 1 of the present invention may serve as a corrosion-resistant coating material for semiconductor equipment or components. The semiconductor equipment or components may include, but are not limited to, a chamber, chamber components, a wafer susceptor, a chuck, a showerhead, a liner, a ring, a nozzle, a baffle, a fastener, a wafer transport component, etc.

[0086] The structure, operation, and effects of the present invention will be explained in more detail below through preferred embodiments of the present invention. However, these are presented as preferred examples of the present invention and should not be interpreted in any way as limiting the present invention.

[0087] [Example 1] Synthesis of Bis(ethylcyclopentadienyl)(2,2,2-trifluoroethyl-ethylamidinato)yttrium[(EtCp)2Y(CF3Me-Et-AMD)]

[0088] <Compound 1>

[0089]

[0090] 10 g (0.0512 mol) of YCl3 and 30 mL of THF were placed in a 250 mL Schlenk flask A. 30 mL of THF and 61.4 mL (0.1536 mol) of nBuLi hexane solution (2.5 M) were added to a 250 mL Schlenk flask B, and 14.46 g (0.1536 mol) of ethylcyclopentadiene was slowly added dropwise at 0°C and stirred at room temperature for 3 hours to prepare Li-EtCp. The prepared Li-EtCp was added dropwise to Schlenk flask A at 0°C and stirred at room temperature for 6 hours. 12.09 g (0.0512 mol) of 2,2,2-trifluoroethyl-ethylamidinate was added and stirred at room temperature for 3 hours, after which the solvent was removed under reduced pressure. The mixture obtained in this way was extracted with 200 mL of hexane and filtered to evaporate the solvent and volatile substances under vacuum. The liquid remaining after evaporation was purified by distillation at 180°C and 20 mTorr to obtain a light yellow liquid. The yield was 13.8 g (53%). 1 The results of the H NMR analysis are shown in Figure 1, and 19 The results of the F NMR analysis are shown in Figure 2 (Bruker AV400MHz HD), and the synthesis of the target compound was confirmed by identifying the following characteristic peaks:

[0091] 1H NMR (C6D6, 25°C): 0.49(t, 3H), 1.15(t, 6H), 1.45(q, 2H), 2.42(q, 4H), 3.24(q, 4H), 6.06(m, 8H);

[0092] 19 F NMR (C6D6, 25℃): δ-71.4.

[0093] The light yellow liquid left almost no residual mass, at 1.60%, during TGA (TAinstrument SDT Q600) analysis measured at a temperature increase rate of 10°C / min in an atmosphere where nitrogen was flowed at 200 ml / min. These results are illustrated in Figure 3, which shows the TGA analysis results representing the percentage of weight loss according to temperature change.

[0094] An orange liquid sample was placed in a sealed container for DSC and maintained at 40°C for 10 minutes. During DSC analysis (TA instrument Discovery 25) measured at a temperature increase rate of 10°C / min, a decomposition peak was observed at 295°C. These results are illustrated in Figure 4, which shows the DSC analysis results indicating the change in thermal energy according to the change in temperature.

[0095] As shown in the embodiments of the present invention above, it was confirmed that the compound of the present invention possesses structural and thermal stability optimized for a deposition process for forming a metal-containing thin film.

[0096] Although the present invention has been described in more detail with reference to the embodiments and drawings of this specification, this specification is not necessarily limited to these embodiments and drawings, and various modifications may be made within the scope of the technical spirit of this specification. Accordingly, the embodiments and drawings disclosed in this specification are intended to explain, not limit, the technical spirit of this specification, and the scope of the technical spirit of this specification is not limited by these embodiments. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. The scope of protection of this specification shall be interpreted by the claims, and all technical spirits within an equivalent scope shall be interpreted as being included within the scope of rights of this specification.

Claims

1. A precursor for forming a metal-containing thin film comprising a metal-containing compound represented by the following chemical formula 1: <Chemical Formula 1> In the above chemical formula 1, M is one of the lanthanide metals, yttrium (Y) and scandium (Sc), and R 1 to R 5 The groups may be identical or different from each other and may each be independently selected from hydrogen, a C1-C8 straight-chain alkyl group, a C2-C8 straight-chain alkenyl group, a C3-C8 branched alkyl group, a C3-C8 cyclic alkyl group, a C3-C8 branched alkenyl group, and a C3-C8 cyclic alkenyl group. The above R 1 to R 3 At least one of them is selected as a C1-C8 straight-chain alkyl group, wherein the alkyl group comprises one or more fluorine (F) atoms.

2. In Paragraph 1, The above M is yttrium, a precursor for forming a metal-containing thin film.

3. In Paragraph 1, The above R 1 and R 2 A precursor for forming a metal-containing thin film, which is identical to one another.

4. In Paragraph 1, The above R 4 and R 5 A precursor for forming a metal-containing thin film, which is identical to one another.

5. In Paragraph 1, The above R 4 and R 5 A precursor for forming a metal-containing thin film, each independently selected from hydrogen and a C1-C8 straight-chain alkyl group.

6. In Paragraph 1, The above R 1 and R 2 A precursor for forming a metal-containing thin film, wherein the alkyl group is selected as a C1-C8 straight-chain alkyl group, and the alkyl group comprises one or more fluorine atoms.

7. In Paragraph 1, The above R 3 is a precursor for forming metal-containing thin films, which is a C2-C8 straight-chain alkyl group.

8. First step of preparing a substrate in a reactor; A second step of supplying a precursor for forming a metal-containing thin film according to any one of claims 1 to 7 to the surface of the substrate; and A method for forming a metal-containing thin film, comprising: a third step of reacting the metal-containing thin film forming precursor with a reactive gas.

9. In Paragraph 8, A method for forming a metal-containing thin film, characterized in that the second step above involves vaporizing the precursor for forming the metal-containing thin film, transferring it into a reactor, and supplying it to the surface of the substrate.

10. In Paragraph 8, A method for forming a metal-containing thin film, characterized in that the method is performed by a process selected from a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a high density plasma chemical vapor deposition (HDPCVD) process, an atomic layer deposition (ALD) process, and a plasma-enhanced atomic layer deposition (PEALD) process.

11. In Paragraph 8, A method for forming a metal-containing thin film, characterized in that the reactive gas of the third step comprises one or more selected from nitrogen (N2), ammonia (NH3), hydrazine (N2H4), nitrous oxide (N2O), oxygen (O2), water vapor (H2O), ozone (O3), hydrogen peroxide (H2O2), silane (SiH4), hydrogen (H2), and diborane (B2H6).

12. A semiconductor device comprising a metal-containing thin film manufactured by the method for forming a metal-containing thin film according to claim 8.

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