Perovskite tandem device and perovskite tandem solar cell including same
The perovskite tandem device with an insulating layer between electrodes addresses high leakage and efficiency loss by minimizing contact and maintaining low current and high efficiency under reverse voltage, using materials like aluminum oxide and silicon nitride.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- HANWHA SOLUTIONS CORP
- Filing Date
- 2025-03-05
- Publication Date
- 2026-07-09
AI Technical Summary
Conventional perovskite tandem devices experience high leakage current and efficiency degradation under reverse voltage conditions.
A perovskite tandem device design featuring an insulating layer formed between the lower electrode and the material derived from the transparent electrode layer, preventing contact and extending to cover the lower electrode's side and bottom, using materials like aluminum oxide, silicon nitride, or polytetrafluoroethylene, with a thickness of 5 nm to 100 µm, to minimize leakage current and maintain efficiency.
The design achieves low leakage current (≤2.5 mA/cm²) and reduces efficiency degradation (≤5%) under reverse voltage conditions, enhancing device stability and performance.
Smart Images
Figure KR2025099577_09072026_PF_FP_ABST
Abstract
Description
Perovskite tandem device and perovskite tandem solar cell including the same
[0001] The present invention relates to a perovskite tandem device, and more specifically, to a perovskite tandem device and a perovskite tandem solar cell including the same.
[0002] In order to address the depletion of fossil fuels and the global environmental problems caused by their use, research on renewable and clean alternative energy sources such as solar, wind, and hydroelectric power is actively underway.
[0003] Among these, interest in solar cells, which directly convert sunlight into electrical energy, is increasing significantly. Here, a solar cell refers to a battery that generates current and voltage by utilizing the photovoltaic effect, which absorbs light energy from sunlight to generate electrons and holes.
[0004] Various methods for such solar cells are being proposed, and among them, solar cells utilizing perovskite material—known to have the same crystal structure as calcium titanium oxide (CaTiO3)—as the light-absorbing layer are gaining attention.
[0005] Perovskite solar cells are third-generation solar cells that combine silicon wafer-based technology and thin-film technology. Compared to other types of solar cells, they possess characteristics such as a high absorption coefficient, a variable band gap, and a rapidly increasing capacity. In addition, perovskite solar cells are superior to silicon solar cells in terms of cost, rigidity, weight, and efficiency.
[0006] Tandem solar cells are an attempt to minimize thermal energy loss by effectively utilizing solar energy over a wide wavelength range through the vertical stacking of light-absorbing layers with different bandgaps. Specifically, tandem solar cells can overcome the efficiency limitations of single-junction solar cells by minimizing the loss of excess electron-hole energy as heating energy—which occurs when photons with energy greater than the bandgap are absorbed by a light-absorbing layer—through the principle that light-absorbing layers with different bandgaps absorb sunlight by dividing it according to wavelength ranges. Recently, with increasing interest in tandem solar cells as the most feasible next-generation solar cells, fierce research and development competition is underway worldwide to secure the technology for tandem solar cells with various structures.
[0007] Meanwhile, in the case of conventional perovskite tandem devices, there was a problem where leakage current was high and device efficiency deteriorated under reverse voltage conditions.
[0008]
[0009] Accordingly, there is an urgent need to develop perovskite tandem devices that have low leakage current under reverse voltage conditions and can prevent degradation of device efficiency.
[0010]
[0011] [Prior Art Literature]
[0012] [Patent Literature]
[0013] (Patent Document 1) Republic of Korea Published Patent No. 10-2016-0069461 (Publication Date: June 16, 2016)
[0014] The present invention was devised to overcome the aforementioned problems and aims to provide a perovskite tandem device that has low leakage current under reverse voltage conditions and can prevent degradation of device efficiency, and a perovskite tandem solar cell including the same.
[0015] To solve the above-mentioned problem, the present invention provides a perovskite tandem device comprising an upper electrode, an upper transparent electrode layer, an upper cell, a lower transparent electrode layer, a lower cell, and a lower electrode arranged sequentially, wherein a material derived from one or more of the upper transparent electrode layer and the lower transparent electrode layer extends toward the side of the lower cell and the lower electrode, and an insulating layer formed including an interface between the lower electrode and the material derived from the transparent electrode layer and at least a portion of the side of the lower electrode.
[0016] According to a preferred embodiment of the present invention, the material derived from the transparent electrode layer may extend to the side and bottom side of the lower cell and the lower electrode.
[0017] In addition, the insulating layer may be formed to include the interface between the lower electrode and the material derived from the transparent electrode layer, and at least a portion of the side and bottom surfaces of the lower electrode.
[0018] In addition, the upper transparent electrode layer and the lower transparent electrode layer may include a transparent conducting oxide (TCO).
[0019] In addition, the material derived from one or more of the upper transparent electrode layer and the lower transparent electrode layer may not come into contact with each other.
[0020] In addition, the insulating layer may include one or more materials selected from the group consisting of aluminum oxide (AlOx), aluminum nitride (AlNx), silicon nitride (SiNx), polytetrafluoroethylene (PTFE), and glass paste.
[0021] In addition, the insulating layer may have a thickness of 5 nm to 100 µm.
[0022] In addition, the insulating layer may be formed to cover the lower edge of the lower cell with a width of 0.6 mm or more, including a portion of the lower electrode.
[0023] In addition, the leakage current measured by the following measurement method 1 may be 2.5 mA / ㎠ or less.
[0024] [Measurement Method 1]
[0025] Leakage current is measured by performing a current-voltage scan (IV scan) in a dark state in a voltage range of -20V to 2V.
[0026] In addition, the reduction in efficiency measured by the following measurement method 2 may be 5% or less.
[0027] [Measurement Method 2]
[0028] A reverse voltage test was performed by applying a constant voltage of -15V for 5 hours at a temperature of 23℃ and in a dark state, and the reduction in efficiency before and after the reverse voltage test was measured by performing a current-voltage scan (IV scan) in a voltage range of -0.1V to 1.95V under 1 sun (100mW / ㎠).
[0029]
[0030] In addition, the present invention provides a perovskite tandem solar cell comprising the perovskite tandem element described above.
[0031] The perovskite tandem device of the present invention and the perovskite tandem solar cell including the same can simultaneously exhibit the effects of low leakage current under reverse voltage conditions and preventing degradation of device efficiency.
[0032] FIG. 1 is a schematic cross-sectional view of a perovskite tandem device according to one embodiment of the present invention.
[0033] FIG. 2 is a graph of leakage current measurements for Example 1, Example 2 and Comparative Example 1 of the present invention.
[0034] Figure 3 is a graph of leakage current measurements before and after laser isolation of Example 1 of the present invention.
[0035] Figure 4 is a graph of leakage current measurements before and after laser isolation of Example 2 of the present invention.
[0036] Figure 5 is a graph of the leakage current measurement before and after laser isolation of Comparative Example 1 of the present invention.
[0037] Hereinafter, embodiments of the present invention are described in detail so that those skilled in the art can easily implement the invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein.
[0038]
[0039] As illustrated in FIG. 1, a perovskite tandem element (100) according to the present invention comprises an upper electrode (10), an upper transparent electrode layer (20), an upper cell (30), a lower transparent electrode layer (40), a lower cell (50), and a lower electrode (60) arranged sequentially, and a material (21, 41) derived from one or more of the upper transparent electrode layer (20) and the lower transparent electrode layer (40) extends toward the side of the lower cell (50) and the lower electrode (60), and is implemented by including an insulating layer (70) formed on the interface between the lower electrode (60) and the material (21, 41) derived from the transparent electrode layer and on at least a portion of the side of the lower electrode (60).
[0040] As the above upper electrode (10), upper cell (30), lower cell (50), and lower electrode (60) may be identical to known upper electrodes, upper cells, lower cells, and lower electrodes commonly used in the art, the present invention does not specifically limit them.
[0041] For example, the upper electrode (10) and the lower electrode (60) may include one or more selected from a conductive metal, an alloy of a conductive metal, a metal oxide, and a conductive polymer. As a non-limiting example, the upper electrode and the lower electrode may be formed by coating or depositing one or more materials selected from Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, C, and a conductive polymer.
[0042] Additionally, for example, the upper cell may be a silicon cell or a perovskite cell, and the lower cell may be a perovskite cell or a silicon cell.
[0043] Below, an exemplary description will be provided based on the case where the upper cell (30) is a perovskite cell and the lower cell (50) is a silicon cell.
[0044] First, the lower cell (50) above may be a silicon cell as described above.
[0045] The above silicon cell may include a silicon layer and may further include an emitter layer on the upper surface of the silicon layer.
[0046] The silicon layer may have one of the structures of known silicon solar cells and is not limited to a specific structure. For example, the silicon layer may include a crystalline silicon substrate, a p-type amorphous or crystalline silicon layer, an n-type amorphous or crystalline silicon layer, an amorphous intrinsic silicon layer, and may further include additional layers as needed. According to a more preferred embodiment, considering industrial advantages such as ease of internal gettering or process simplification that help improve cell efficiency compared to n-type silicon, the silicon layer may be a p-type silicon layer, and the emitter layer may be an n-type emitter layer.
[0047] In addition, the structure of the silicon cell is not specifically limited, as it can be an Al-BSF (Aluminum Back Surface Field), PERC (Passivated Emitter and Rear Cell), PERT (Passivated Emitter Rear Totally Diffused) and PERL (Passivated Emitter and Rear Locally Diffused) structure formed by forming an n++ emitter on a p-type silicon surface, or a TOPCon (Tunnel oxide passivated contact) structure formed by forming a SiOx tunneling layer / n++ poly-Si.
[0048] Next, the upper cell (30) may be a perovskite cell as described above.
[0049] The above perovskite cell may include a perovskite absorption layer, an electron transport layer (ETL) disposed on one side of the perovskite absorption layer, and a hole transport layer (HTL) disposed on the back side.
[0050] The above perovskite absorption layer can be formed so that hole-electron pairs generated by receiving light energy from the sun can be separated into electrons or holes. At this time, electrons formed in the perovskite absorption layer are transferred to an electron transport layer, and holes formed in the perovskite absorption layer can be transferred to a hole transport layer (220).
[0051] The perovskite absorption layer may include organic halide perovskites such as methyl ammonium iodide (MAI) and formamidinium iodide (FAI), or metal halide perovskites such as lead iodide (PbI2), bromine iodide (PbBr), and lead chloride (PbCl2). That is, the perovskite absorption layer may be a multilayer stacked structure comprising at least one of organic halide perovskites or metal halide perovskites. More specifically, the perovskite absorption layer may be represented as AMX3 (where A represents a monovalent organic ammonium cation or metal cation; M represents a divalent metal cation; and X represents a halogen anion).
[0052] In addition, the hole transport layer serves to separate and transport holes formed in the perovskite absorption layer, and can be formed from a known conventional material as long as it meets the purpose of the present invention.
[0053] In addition, the electron transport layer serves to separate and transport electrons formed in the perovskite absorption layer, and can be formed from a known conventional material as long as it aligns with the purpose of the present invention.
[0054] The hole transport layer and the electron transport layer may each independently include inorganic and / or organic transport materials.
[0055] The above-mentioned inorganic delivery material may include one or more selected from nickel oxide (NiOx), CuSCN, CuCrO2, and CuI.
[0056] The above organic carriers are carbazole derivatives, polyarylalkane derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorene derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidine compounds, porphyrin compounds, phthalocyanine compounds, polythiophene derivatives, polypyrrole derivatives, polyparaphenylenevinylene derivatives, pentacene, coumarin 6 (3-(2-benzothiazolyl)-7-(diethylamino)coumarin), ZnPC (zinc phthalocyanine), CuPC (copper phthalocyanine), TiOPC (titanium oxide phthalocyanine), Spiro-MeOTAD(2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)-9,9'-spirobifluorene), F16CuPC(copper(II) 1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro-29H,31H-phthalocyanine), SubPc (boron subphthalocyanine chloride) and N3(cis-di(thiocyanato)-bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)-ruthenium(II), P3HT(poly[3-hexylthiophene]), MDMO-PPV(poly[2-methoxy-5-(3',7'-dimethyloctyloxyl)]-1,4-phenylene vinylene), MEH-PPV(poly[2-methoxy-5-(2''-ethylhexyloxy)-p-phenylene vinylene]), P3OT(poly(3-octyl thiophene)), POT(poly(octyl thiophene)), P3DT(poly(3-decyl thiophene)),P3DDT(poly(3-dodecyl thiophene), PPV(poly(p-phenylene vinylene)), TFB(poly(9,9'-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine), 폴리아닐린(Polyaniline), Spiro-MeOTAD([2,22′,7,77′-tetrkis (N,N-di-pmethoxyphenyl amine)-9,9,9′-spirobi fluorine]), CuSCN, CuI, PCPDTBT(Poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl-4H-cyclopenta [2,1-b:3,4-b']dithiophene-2,6-diyl]], Si-PCPDTBT(poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PBDTTPD(poly((4,8-diethylhexyloxyl), PFDTBT(poly[2,7-(9-(2-ethylhexyl)-9-hexyl-fluorene)-alt-5,5-(4', 7, -di-2-thienyl-2',1', 3'-benzothiadiazole)]), PFO-DBT(poly[2,7-.9,9-(dioctyl-fluorene)-alt-5,5-(4',7'-di-2-.thienyl-2', 1', 3'-benzothiadiazole)]), PSiFDTBT(poly[(2,7-dioctylsilafluorene)-2,7-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole)-5,5′-diyl]), PCDTBT(Poly [[9-(1-octylnonyl)-9H-carbazole-2,7-diyl] -2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]), PFB(poly(9,9′-dioctylfluorene-co-bis(N,N′-(4,butylphenyl))bis(N,N′-phenyl-1,4-phenylene)diamine), F8BT(poly(9,9′-dioctylfluorene-cobenzothiadiazole), PEDOT (poly(3,4-ethylenedioxythiophene)), PEDOT:PSS It may include poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PTAA (poly(triarylamine)), 2-PACz, Me-2PACz, 4-PACz, MeO-4PACz, Me-4PACz and / or MeO-2PACz.
[0057] In addition, methods for forming the hole transport layer and electron transport layer, respectively, may include coating methods and vacuum deposition methods, and coating methods may include gravure coating, bar coating, printing, spraying, spin coating, dip coating, and die coating.
[0058]
[0059] Next, the upper transparent electrode layer (20) and the lower transparent electrode layer (40) will be described.
[0060] The upper transparent electrode layer (20) and the lower transparent electrode layer (40) receive charge from the upper electrode (10) and perform the function of transferring charge to the lower electrode (20).
[0061] The upper transparent electrode layer (20) and the lower transparent electrode layer (40) may be implemented by including one or more materials from the group consisting of transparent conductive oxides, carbonaceous conductive materials, metallic materials, and conductive polymers, and preferably, it may be more advantageous to implement them by including a transparent conducting oxide (TCO) to achieve the purpose of the present invention.
[0062] Meanwhile, as described above, a material (21, 41) derived from one or more of the upper transparent electrode layer (20) and the lower transparent electrode layer (40) is extended to the side of the lower cell (50) and the lower electrode (60), and preferably, the material (21, 41) derived from the transparent electrode layer can be extended to the side and lower side of the lower cell (50) and the lower electrode (60).
[0063] At this time, the material derived from the transparent electrode layer may be extended to the side of the lower cell (50) and the lower electrode (60), preferably to the side and lower side, by a process (sputtering, etc.) for forming each transparent electrode layer, but is not limited thereto.
[0064]
[0065] In addition, the perovskite tandem element (100) according to the present invention includes an insulating layer (70) as described above.
[0066] The insulating layer (70) is formed to include an interface between the lower electrode (60) and the material (21, 41) derived from the transparent electrode layer, and at least a portion of the side surface of the lower electrode (60), and preferably, it can be formed to include an interface between the lower electrode and the material derived from the transparent electrode layer, and at least a portion of the side surface and bottom surface of the lower electrode.
[0067] In the past, there was a problem in which leakage current occurred and device efficiency deteriorated under reverse voltage conditions as the material derived from the transparent electrode layer came into contact with the "side" or "side and bottom" of the lower electrode.
[0068] In the present invention, the above problem is recognized, and an insulating layer (70) is introduced to solve it. Accordingly, one or more of the materials derived from the upper transparent electrode layer (21) and the materials derived from the lower transparent electrode layer (41) and the lower electrode (60) may not come into contact with each other. As a result, the leakage current in reverse voltage situations and the effect of preventing degradation of device efficiency can be simultaneously exhibited.
[0069] The insulating layer (70) may include one or more selected from the group consisting of aluminum oxide (AlOx), aluminum nitride (AlNx), silicon nitride (SiNx), polytetrafluoroethylene (PTFE), and glass paste, and preferably, including aluminum oxide (AlOx) may be advantageous for achieving the objectives of the present invention, such as thermal stability and insulating properties.
[0070] In addition, the insulating layer may have a thickness of 5 nm to 100 µm, and preferably, a thickness of 100 to 500 nm. If the thickness of the insulating layer is less than 5 nm, the insulating properties may be degraded, the thin film may not form well due to process deviations, and there may be a problem that the thin film is easily removed physically. If the thickness of the insulating layer exceeds 100 µm, there may be a problem that the device is destroyed (broken) during the module fabrication process or wire detachment occurs due to the height difference of the device.
[0071] Additionally, the insulating layer may be formed to cover the lower cell bottom edge with a width of 0.6 mm or more, including a portion of the lower electrode; preferably, it may be formed to cover the lower cell bottom edge with a width of 0.7 mm or more, including a portion of the lower electrode; more preferably, it may be formed to cover the lower cell bottom edge with a width of 1 mm or more, including a portion of the lower electrode; and even more preferably, it may be formed to cover the lower cell bottom edge with a width of 2 mm or more, including a portion of the lower electrode. If the insulating layer is formed to cover the lower cell bottom edge with a width of less than 0.6 mm, including a portion of the lower electrode, there may be a problem of increased leakage current.
[0072]
[0073] And, the above perovskite tandem element (100) may have a leakage current of 2.5 mA / cm² or less as measured by the following measurement method 1, preferably 2 mA / cm² or less, and more preferably 1.5 mA / cm² or less.
[0074] [Measurement Method 1]
[0075] Leakage current is measured by performing a current-voltage scan (IV scan) in a dark state in a voltage range of -20V to 2V.
[0076] In addition, the perovskite tandem element (100) may have an efficiency reduction of 5% or less as measured by the following measurement method 2, preferably an efficiency reduction of 3% or less, and more preferably an efficiency reduction of 1% or less.
[0077] [Measurement Method 2]
[0078] A reverse voltage test was performed by applying a constant voltage of -15V for 5 hours at a temperature of 23℃ and in a dark state, and the reduction in efficiency before and after the reverse voltage test was measured by performing a current-voltage scan (IV scan) in a voltage range of -0.1V to 1.95V under 1 sun (100mW / ㎠).
[0079] As the above perovskite tandem device (100) satisfies the leakage current range and the efficiency reduction range, it is possible to simultaneously achieve the effects of having low leakage current in reverse voltage situations and preventing degradation of device efficiency, and when applying a perovskite tandem solar cell, the reduction in efficiency can be minimized.
[0080]
[0081] In addition, the present invention provides a perovskite tandem solar cell comprising the perovskite tandem element (100) described above.
[0082] In addition to the perovskite tandem element (100) described above, the configuration of the perovskite tandem solar cell may be identical to the configuration of a known perovskite tandem solar cell, and thus the present invention does not specifically limit it.
[0083]
[0084] The perovskite tandem device of the present invention and the perovskite tandem solar cell including the same can simultaneously exhibit the effects of low leakage current under reverse voltage conditions and preventing degradation of device efficiency.
[0085]
[0086] The present invention will be explained in more detail below through examples, but the following examples are not intended to limit the scope of the invention and should be interpreted as being for the purpose of aiding understanding of the invention.
[0087] [Example]
[0088] <Example 1: Fabrication of Perovskite Tandem Device>
[0089] After forming an insulating layer by attaching polytetrafluoroethylene (PTFE) tape to the bottom surface of a Si substrate having a bottom electrode formed thereon, covering the edges with a width of 2 mm including a portion of the bottom electrode area, ITO (Indium Tin Oxide) and NiOx are deposited on the insulating layer-formed Si substrate using sputtering, and a self-assembled monolayer (SAM) layer of 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid) is formed via spin-coating, a perovskite (PVSK) layer is formed via slot die coating, LiF and C60, a fullerene-based organic material, are deposited using an evaporator, SnOx is deposited using atomic layer deposition (ALD), ITO (Indium Tin Oxide) is deposited using sputtering, and Ag is formed via screen printing, A perovskite tandem device was fabricated comprising an upper electrode, an upper transparent electrode layer, an upper cell, a lower transparent electrode layer, a lower cell, and a lower electrode arranged sequentially, and an insulating layer having an average thickness of 300 nm formed to cover the side and bottom surfaces of the lower electrode (see FIG. 1).
[0090]
[0091] <Example 2>
[0092] A perovskite tandem device was manufactured by carrying out the same procedure as in Example 1 above, but with modifications so that the insulating layer is formed to cover the edge with a width of 1 mm, including a portion of the lower electrode.
[0093]
[0094] <Comparative Example 1>
[0095] A perovskite tandem device was manufactured by carrying out the same procedure as in Example 1 above, but with the insulation layer not formed.
[0096]
[0097] <Experimental Example>
[0098] The following properties were measured for the perovskite tandem devices prepared according to the above examples and comparative examples. These are shown in Table 1 below.
[0099] 1. Leakage current measurement
[0100] For the perovskite tandem devices prepared according to the above examples and comparative examples, leakage current was measured by performing a current-voltage scan (IV scan) in the dark state using an SMU 2651A device in the voltage range of -20V to 2V, and the current value at -15V was compared (Table 1 and Fig. 2).
[0101] In addition, after performing laser isolation, the leakage current was measured using the same method as above, and the difference in leakage current before and after laser isolation was measured (Table 1 and Figures 3 to 5).
[0102]
[0103] 2. Reverse Voltage Stability Evaluation
[0104] For the perovskite tandem devices prepared according to the above examples and comparative examples, a reverse voltage test was performed by applying a constant voltage of -15V for 5 hours at a temperature of 23℃ and in a dark state, and the reverse voltage stability (degree of efficiency degradation) was measured by performing a current-voltage scan (IV scan) in a voltage range of -0.1V to 1.95V under 1 sun (100mW / ㎠) (Table 1).
[0105] Classification Example 1 Example 2 Comparative Example 1 Insulation Layer Width (mm) 2 1 - Leakage Current (A) Before Laser Isolation 0.36 1 0.6 1 0 1.4 19 After Laser Isolation 0.31 3 0.5 7 8 0.9 6 Difference in Leakage Current Before and After Laser Isolation (mA / ㎠) 0.04 8 0.03 2 0.5 14 Reverse Voltage Stability (%) -0.14 -0.17 -3 4.04
[0106] As can be seen from Table 1 and Figures 2 to 5 above, it can be confirmed that Examples 1 and 2, which satisfy all of the insulation layer formation width and whether an insulation layer is formed according to the present invention, simultaneously exhibit significantly lower leakage current and significantly superior stability before and after reverse voltage testing compared to Comparative Example 1, which does not form an insulation layer.
[0107] Meanwhile, in the case of Comparative Example 1, in which no insulating layer was formed, the leakage current before and after laser isolation decreased by 0.514 A, whereas in Examples 1 and 2, the leakage current decreased by 0.048 A and 0.032 A, respectively. Through the fact that the reduction in leakage current before and after laser isolation in Examples 1 and 2 was very low compared to Comparative Example 1, the effect of reducing leakage current due to the formation of an insulating layer could be clearly confirmed.
[0108]
[0109] Although an embodiment of the present invention has been described above, the concept of the present invention is not limited to the embodiments presented in this specification. Those skilled in the art who understand the concept of the present invention may easily propose other embodiments within the scope of the same concept by adding, changing, deleting, or adding components, and such embodiments shall also be considered to fall within the scope of the concept of the present invention.
[0110]
[0111] [Explanation of the symbol]
[0112] 100: Perovskite tandem device
[0113] 10: Upper electrode
[0114] 20: Upper transparent electrode layer
[0115] 21: Material derived from the upper transparent electrode layer
[0116] 30: Upper cell
[0117] 40: Lower transparent electrode layer
[0118] 41: Material derived from the lower transparent electrode layer
[0119] 50: Lower cell
[0120] 60: Lower electrode
[0121] 70: Insulating layer
Claims
1. An upper electrode; an upper transparent electrode layer; an upper cell; a lower transparent electrode layer; a lower cell; and a lower electrode are arranged sequentially, and A material derived from one or more of the upper transparent electrode layer and the lower transparent electrode layer extends to the side of the lower cell and the lower electrode, and A perovskite tandem device comprising: an insulating layer formed including an interface phase between the lower electrode and a material derived from the transparent electrode layer, and at least a portion of a phase on the side of the lower electrode.
2. In Paragraph 1, The material derived from the transparent electrode layer is a perovskite tandem device extending to the side and bottom side of the lower cell and lower electrode.
3. In Paragraph 1, A perovskite tandem device, wherein the insulating layer is formed by including at least a portion of the interface between the lower electrode and the material derived from the transparent electrode layer, and the side and bottom surfaces of the lower electrode.
4. In Paragraph 1, A perovskite tandem device in which the upper transparent electrode layer and the lower transparent electrode layer comprise a transparent conducting oxide (TCO).
5. In Paragraph 1, A perovskite tandem device in which a material derived from one or more of the upper transparent electrode layer and the lower transparent electrode layer, and the lower electrode do not come into contact with each other.
6. In Paragraph 1, A perovskite tandem device comprising one or more selected from the group consisting of aluminum oxide (AlOx), aluminum nitride (AlNx), silicon nitride (SiNx), polytetrafluoroethylene (PTFE), and glass paste, wherein the insulating layer comprises 7. In Paragraph 1, The above insulating layer is a perovskite tandem device having a thickness of 5 nm to 100 μm.
8. In Paragraph 1, A perovskite tandem device, wherein the insulating layer is formed to cover the lower edge of the lower cell with a width of 0.6 mm or more, including a portion of the lower electrode.
9. In Paragraph 1, A perovskite tandem element having a leakage current of 2.5 mA / cm² or less as measured by the following measurement method 1: [Measurement Method 1] Leakage current is measured by performing a current-voltage scan (IV scan) in a dark state in a voltage range of -20V to 2V.
10. In Paragraph 1, Perovskite tandem device having an efficiency reduction of 5% or less as measured by the following measurement method 2: [Measurement Method 2] A reverse voltage test was performed by applying a constant voltage of -15V for 5 hours at a temperature of 23℃ and in a dark state, and the reduction in efficiency before and after the reverse voltage test was measured by performing a current-voltage scan (IV scan) in a voltage range of -0.1V to 1.95V under 1 sun (100mW / ㎠).
11. A perovskite tandem solar cell comprising a perovskite tandem element according to any one of claims 1 to 10.