Lithographic module with vibration-reducing isolation structure

Abstract

A module includes a load port that receives one or more patterning tools, a frame that supports the module, a support frame in physical connection with the frame, and at least one isolation structure positioned between the frame and the support frame. The support frame supports the module and one or more additional modules. The at least one isolation structure reduces vibrations from the support frame that contribute to a deflection of the load port.

Description

LITHOGRAPHIC MODULE WITH VIBRATION-REDUCING ISOLATION STRUCTURECROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority of US application 63 / 760,906 which was filed on February 20, 2025 and which is incorporated herein in its entirety by reference.FIELD

[0001] The present disclosure relates to vibration damping, for example, a module including a structure for reducing vibrations in lithographic apparatuses and systems.BACKGROUND

[0002] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which may be a mask or a reticle, can be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (photoresist or simply “resist”) provided on the substrate.

[0003] Lithographic operations may be performed in a lithographic apparatus having a controlled atmosphere, for example, under vacuum or an atmosphere that is nitrogen- or argon-enriched. In such cases, tools or materials that are used to perform lithographic operations, such as masking patterns, reticles, work pieces, or the like, must be transferred into the controlled atmosphere of the lithographic apparatus. To perform lithographic operations under such conditions while maintaining a high throughput may require, in some cases, the use of an accessory module that is responsible for moving such tools or materials. In some cases, such a module may be referred to as an “atmospheric reticle handler” (ARH), although such modules can go by various other names.

[0004] In some instances, increasing the throughput of lithographic operations can have unintended consequences on such accessory modules. For example, in some cases, increased throughput can lead to increased vibrations and / or higher or lower frequency vibrations, which can affect the integrity of the module. Such vibrations may be transmitted from the lithographic apparatus through a support frame, which physically connects the lithographic apparatus to the frame of the module, and into one or more parts of the module. In some cases, such vibrations may contribute to an increased deflection of a load port in the module, which can lead to problems with performance of the load port, slippage with the masking pattern or reticle, and inaccuracies in the wafers having undergone lithographic operations.SUMMARY

[0005] Accordingly, there is a need to reduce vibrations from a lithographic apparatus into its associated module(s).

[0006] In some aspects, a module includes a load port, a frame, a support frame in physical connection with the frame, and at least one isolation structure positioned between the frame and the support frame. The load port may receive one or more pattern tools. The frame may support the module. The support frame may support the module and one or more additional modules. The isolation structure may reduce vibrations from the support frame that contribute to a deflection of the load port.

[0007] In some aspects, the isolation structure includes at least one oscillator and at least one damper. The oscillator may include a spring element. In some aspects, the damper may include a plurality of damper assemblies arranged around a periphery of the oscillator. Each damper assembly may include a plurality of damping units, where each damping unit is configured to dampen motion in a first direction, based on a compressive strength of the damping unit, and in other directions based on a shear strength of the damping unit. In some aspects, a plurality of isolation structures may be positioned beneath respective corners of the frame. In some aspects, the isolation structure may include a plurality of oscillators and a plurality of dampers positioned at separate locations on the support frame.

[0008] Further features of various aspects of the present disclosure are described in detail below with reference to the accompanying drawings. It is noted that the present disclosure is not limited to the specific aspects described herein. Such aspects are presented herein for illustrative purposes only. Additional aspects will be apparent to those skilled in the relevant art(s) based on the teachings contained herein.BRIEF DESCRIPTION OF THE DRAWINGS / FIGURES

[0009] The accompanying drawings, which are incorporated herein and form part of the specification, illustrate the present disclosure and, together with the description, further serve to explain the principles of the present disclosure and to enable those skilled in the relevant art(s) to make and use aspects described herein.

[0010] FIG. 1A shows a reflective lithographic apparatus, according to some aspects.

[0011] FIG. IB shows a transmissive lithographic apparatus, according to some aspects.

[0012] FIG. 2 shows more details of a reflective lithographic apparatus, according to some aspects.

[0013] FIG. 3 shows a lithographic cell, according to some aspects.

[0014] FIG. 4 shows a schematic representation of a front view of a module, according to some aspects.

[0015] FIG. 5 shows a schematic representation of a side view of an exemplary arrangement of isolation structures, according to some aspects.

[0016] FIG. 6 shows a schematic configuration of an isolation structure, according to some aspects.

[0017] FIG. 7 shows a configuration of a damper, according to some aspects.

[0018] The features of the present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings, in which like reference characters identify corresponding elements throughout. In the drawings, like reference numbers generally indicate identical, functionally similar, and / or structurally similar elements. Additionally, generally, the left-most digit(s) of a reference number identifies the drawing in which the reference number first appears. Unless otherwise indicated, the drawings provided throughout the disclosure should not be interpreted as to-scale drawings.DETAILED DESCRIPTION

[0019] The aspects described herein, and references in the specification to “one aspect,” “an aspect,” “an exemplary aspect,” “an example aspect,” etc., indicate that the aspects described can include a particular feature, structure, or characteristic, but every aspect may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same aspect. Further, when a particular feature, structure, or characteristic is described in connection with an aspect, it is understood that it is within the knowledge of those skilled in the art to effect such feature, structure, or characteristic in connection with other aspects whether or not explicitly described.

[0020] Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “on,” “upper” and the like, can be used herein for ease of description to describe one element or feature’s relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0021] The terms “about,” “approximately,” or the like can be used herein to indicate the value of a given quantity that can vary based on a particular technology. Based on the particular technology, the terms “about,” “approximately,” or the like can indicate a value of a given quantity that varies within, for example, 10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

[0022] Before describing such aspects in more detail, however, it is instructive to present an example environment in which aspects of the present disclosure can be implemented.

[0023] Example Lithographic Systems

[0024] FIGS. 1A and IB show a lithographic apparatus 100 and a lithographic apparatus 100’, respectively, in which aspects of the present disclosure can be implemented. Lithographic apparatus 100 and lithographic apparatus 100’ each include the following: an illumination system (illuminator) IL configured to condition a radiation beam B (for example, deep ultra violet or extreme ultra violet radiation);a support structure (for example, a mask table) MT configured to support a patterning device (for example, a mask, a reticle, or a dynamic patterning device) MA and connected to a first positioner PM configured to accurately position the patterning device MA; and, a substrate table (for example, a wafer table) WT configured to hold a substrate (for example, a resist coated wafer) W and connected to a second positioner PW configured to accurately position the substrate W. Lithographic apparatus 100 and 100’ also have a projection system PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion (for example, comprising one or more dies) C of the substrate W. In lithographic apparatus 100, the patterning device MA and the projection system PS are reflective. In lithographic apparatus 100’, the patterning device MA and the projection system PS are transmissive.

[0025] The illumination system IL can include various types of optical components, such as refractive, reflective, catadioptric, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, for directing, shaping, or controlling the radiation beam B.

[0026] The support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device MA with respect to a reference frame, the design of at least one of the lithographic apparatus 100 and 100’ , and other conditions, such as whether or not the patterning device MA is held in a vacuum environment. The support structure MT can use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterning device MA. The support structure MT can be a frame or a table, for example, which can be fixed or movable. By using sensors, the support structure MT can ensure that the patterning device MA is at a desired position, for example, with respect to the projection system PS.

[0027] The term “patterning device” MA should be broadly interpreted as referring to any device that can be used to impart a radiation beam B with a pattern in its cross-section, such as to create a pattern in the target portion C of the substrate W. The pattern imparted to the radiation beam B can correspond to a particular functional layer in a device being created in the target portion C to form an integrated circuit.

[0028] The patterning device MA can be transmissive (as in lithographic apparatus 100’ of FIG. IB) or reflective (as in lithographic apparatus 100 of FIG. 1A). Examples of patterning devices MA include reticles, masks, programmable mirror arrays, or programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, or attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in the radiation beam B, which is reflected by a matrix of small mirrors.

[0029] The term “projection system” PS can encompass any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or anycombination thereof, as appropriate for the exposure radiation being used, or for other factors, such as the use of an immersion liquid on the substrate W or the use of a vacuum. A vacuum environment can be used for EUV or electron beam radiation since other gases can absorb too much radiation or electrons. A vacuum environment can therefore be provided to the whole beam path with the aid of a vacuum wall and vacuum pumps.

[0030] Lithographic apparatus 100 and / or lithographic apparatus 100’ can be of a type having two (dual stage) or more substrate tables WT (and / or two or more mask tables). In such “multiple stage” machines, the additional substrate tables WT can be used in parallel, or preparatory steps can be carried out on one or more tables while one or more other substrate tables WT are being used for exposure. In some situations, the additional table may not be a substrate table WT.

[0031] The lithographic apparatus can also be of a type wherein at least a portion of the substrate can be covered by a liquid having a relatively high refractive index, e.g., water, so as to fill a space between the projection system and the substrate. An immersion liquid can also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in liquid. For example, a liquid can be located between the projection system and the substrate during exposure.

[0032] Referring to FIGS. 1 A and IB, the illuminator IL receives a radiation beam from a radiation source SO. The source SO and the lithographic apparatus 100, 100’ can be separate physical entities, for example, when the source SO is an excimer laser. In such cases, the source SO is not considered to form part of the lithographic apparatus 100 or 100’, and the radiation beam B passes from the source SO to the illuminator IL with the aid of a beam delivery system BD (in FIG. IB) including, for example, suitable directing mirrors and / or a beam expander. In other cases, the source SO can be an integral part of the lithographic apparatus 100, 100’ , for example, when the source SO is a mercury lamp. A radiation system can comprise the source SO, the illuminator IL, and / or the beam delivery system BD.

[0033] The illuminator IL can include an adjuster AD (in FIG. IB) for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and / or inner radial extent (commonly referred to as “<5-outer” and “<5-inner,” respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL can comprise various other components (in FIG. IB), such as an integrator IN and a condenser CO. The illuminator IL can be used to condition the radiation beam B to have a desired uniformity and intensity distribution in its cross section.

[0034] Referring to FIG. 1 A, the radiation beam B is incident on the patterning device (for example, mask) MA, which is held on the support structure (for example, mask table) MT, and is patterned by the patterning device MA. In lithographic apparatus 100, the radiation beam B is reflected from the patterning device (forexample, mask) MA. After being reflected from the patterning device (for example, mask) MA, the radiation beam B passes through the projection system PS, which focuses the radiation beam B onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF2 (for example, an interferometric device, linear encoder, or capacitive sensor), the substrate table WT can be moved accurately (for example, so as to position different target portions C in the path of the radiation beam B). Similarly, the first positioner PM and another position sensor IF1 can be used to accurately position the patterning device (for example, mask) MA with respect to the path of the radiation beam B. Patterning device (for example, mask) MA and substrate W can be aligned using mask alignment marks Ml, M2 and substrate alignment marks Pl, P2.

[0035] Referring to FIG. IB, the radiation beam B is incident on the patterning device (for example, mask MA), which is held on the support structure (for example, mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. The projection system has a pupil conjugate PPU to an illumination system pupil IPU. Portions of radiation emanate from the intensity distribution at the illumination system pupil IPU and traverse a mask pattern without being affected by diffraction at the mask pattern and create an image of the intensity distribution at the illumination system pupil IPU.

[0036] The projection system PS projects an image of the mask pattern MP, where the image is formed by diffracted beams produced from the mark pattern MP by radiation from the intensity distribution, onto a photoresist layer coated on the substrate W. For example, the mask pattern MP can include an array of lines and spaces. A diffraction of radiation at the array and different from zeroth order diffraction generates diverted diffracted beams with a change of direction in a direction perpendicular to the lines. Undiffracted beams (i.e., so-called zeroth order diffracted beams) traverse the pattern without any change in propagation direction. The zeroth order diffracted beams traverse an upper lens or upper lens group of the projection system PS, upstream of the pupil conjugate PPU of the projection system PS, to reach the pupil conjugate PPU. The portion of the intensity distribution in the plane of the pupil conjugate PPU and associated with the zeroth order diffracted beams is an image of the intensity distribution in the illumination system pupil IPU of the illumination system IL. The aperture device PD, for example, is disposed at or substantially at a plane that includes the pupil conjugate PPU of the projection system PS.

[0037] The projection system PS is arranged to capture (e.g., using a lens or lens group L) the zeroth order diffracted beams, first order diffracted beams, and / or higher order diffracted beams (not shown). In some aspects, dipole illumination for imaging line patterns extending in a direction perpendicular to a line can be used to utilize the resolution enhancement effect of dipole illumination. For example, first-order diffracted beams interfere with corresponding zeroth-order diffracted beams at the level of the wafer W to create animage of the line pattern MP at highest possible resolution and process window (i.e., usable depth of focus in combination with tolerable exposure dose deviations). In some aspects, astigmatism aberration can be reduced by providing radiation poles (not shown) in opposite quadrants of the illumination system pupil IPU. Further, in some aspects, astigmatism aberration can be reduced by blocking the zeroth order beams in the pupil conjugate PPU of the projection system associated with radiation poles in opposite quadrants. This is described in more detail in US 7,511,799 B2, issued Mar. 31, 2009, which is incorporated by reference herein in its entirety.

[0038] With the aid of the second positioner PW and position sensor IFD (for example, an interferometric device, linear encoder, or capacitive sensor), the substrate table WT can be moved accurately (for example, so as to position different target portions C in the path of the radiation beam B). Similarly, the first positioner PM and another position sensor (not shown in FIG. IB) can be used to accurately position the mask MA with respect to the path of the radiation beam B (for example, after mechanical retrieval from a mask library or during a scan).

[0039] In general, movement of the mask table MT can be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT can be realized using a long-stroke module and a shortstroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner), the mask table MT can be connected to a short-stroke actuator or can be fixed. Mask MA and substrate W can be aligned using mask alignment marks Ml, M2, and substrate alignment marks Pl, P2. Although the substrate alignment marks (as illustrated) occupy dedicated target portions, they can be located in spaces between target portions (known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the mask MA, the mask alignment marks can be located between the dies.

[0040] Mask table MT and patterning device MA can be in a vacuum chamber V, where an in-vacuum robot IVR can be used to move patterning devices such as a mask in and out of vacuum chamber. Alternatively, when mask table MT and patterning device MA are outside of the vacuum chamber, an out-of-vacuum robot can be used for various transportation operations, similar to the in-vacuum robot IVR. Both the in-vacuum and out-of-vacuum robots can be calibrated for a smooth transfer of any payload (e.g., mask) to a fixed kinematic mount of a transfer station.

[0041] The lithographic apparatus 100 and 100’ can be used in at least one of the following modes:

[0042] 1. In step mode, the support structure (for example, mask table) MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam B is projected onto a target portion C at one time (i.e., a single static exposure). The substrate table WT is then shifted in the X and / or Y direction so that a different target portion C can be exposed.

[0043] 2. In scan mode, the support structure (for example, mask table) MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam B is projected onto a target portion C (i.e., a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure (for example, mask table) MT can be determined by the (de-)magnification and image reversal characteristics of the projection system PS.

[0044] 3. In another mode, the support structure (for example, mask table) MT is kept substantially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam B is projected onto a target portion C. A pulsed radiation source SO can be employed and the programmable patterning device is updated as needed after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes a programmable patterning device, such as a programmable mirror array.

[0045] Combinations and / or variations on the described modes of use or entirely different modes of use can also be employed.

[0046] In a further aspect, lithographic apparatus 100 includes an extreme ultraviolet (EUV) source, which is configured to generate a beam of EUV radiation for EUV lithography. In general, the EUV source is configured in a radiation system, and a corresponding illumination system is configured to condition the EUV radiation beam of the EUV source.

[0047] FIG. 2 shows the lithographic apparatus 100 in more detail, including the source collector apparatus SO, the illumination system IL, and the projection system PS. The source collector apparatus SO is constructed and arranged such that a vacuum environment can be maintained in an enclosing structure 220 of the source collector apparatus SO. An EUV radiation emitting plasma 210 can be formed by a discharge produced plasma source. EUV radiation can be produced by a gas or vapor, for example Xe gas, Li vapor, or Sn vapor in which EUV radiation emitting plasma 210 is created to emit radiation in the EUV range of the electromagnetic spectrum. The EUV radiation emitting plasma 210 is created by, for example, an electrical discharge causing at least a partially ionized plasma. Partial pressures of, for example, 10 Pa of Xe, Li, Sn vapor, or any other suitable gas or vapor can be used for efficient generation of the radiation. In some aspects, a plasma of excited tin (Sn) (e.g., excited via a laser) is provided to produce EUV radiation.

[0048] The radiation emitted by the EUV radiation emitting plasma 210 is passed from a source chamber 211 into a collector chamber 212 via an optional gas barrier or contaminant trap 230 (in some cases also referred to as contaminant barrier or foil trap), which is positioned in or behind an opening in source chamber 211. The contaminant trap 230 can include a channel structure. Contamination trap 230 can also include a gas barrier or a combination of a gas barrier and a channel structure. The contaminant trap 230 (or contaminant barrier) further indicated herein at least includes a channel structure.

[0049] The collector chamber 212 can include a radiation collector CO, which can be a so-called grazing incidence collector. Radiation collector CO has an upstream radiation collector side 251 and a downstream radiation collector side 252. Radiation that traverses collector CO can be reflected off a grating spectral filter 240 to be focused in a virtual source point INTF. The virtual source point INTF is commonly referred to as the intermediate focus, and the source collector apparatus is arranged such that the intermediate focus INTF is located at or near an opening 219 in the enclosing structure 220. The virtual source point INTF is an image of the EUV radiation emitting plasma 210. Grating spectral filter 240 is used in particular for suppressing infra-red (IR) radiation.

[0050] Subsequently the radiation traverses the illumination system IL, which can include a faceted field mirror device 222 and a faceted pupil mirror device 224 arranged to provide a desired angular distribution of beam of radiation 221, at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA. Upon reflection of the beam of radiation 221 at the patterning device MA, held by the support structure MT, a patterned beam 226 is formed and the patterned beam 226 is imaged by the projection system PS via reflective elements 228, 229 onto a substrate W held by the wafer stage or substrate table WT.

[0051] More elements than shown can generally be present in illumination optics unit IL and projection system PS. The grating spectral filter 240 can optionally be present, depending upon the type of lithographic apparatus. Further, there can be more mirrors present than those shown in the FIG. 2, for example there can be one to six additional reflective elements present in the projection system PS than shown in FIG. 2.

[0052] Collector optic CO, as illustrated in FIG. 2, is depicted as a nested collector with grazing incidence reflectors 253, 254, and 255, just as an example of a collector (or collector mirror). The grazing incidence reflectors 253, 254, and 255 are disposed axially symmetric around an optical axis O and a collector optic CO of this type is preferably used in combination with a discharge produced plasma source, often called a DPP source.

[0053] Example Lithographic Cell

[0054] FIG. 3 shows a lithographic cell 300, also sometimes referred to a lithocell or cluster, according to some aspects. Lithographic apparatus 100 or 100’ can form part of lithographic cell 300. Lithographic cell 300 can also include one or more apparatuses to perform pre- and post-exposure processes on a substrate. Conventionally these include spin coaters SC to deposit resist layers, developers DE to develop exposed resist, chill plates CH, and bake plates BK. A substrate handler, or robot, RO picks up substrates from input / output ports I / Ol, I / O2, moves them between the different process apparatuses and delivers them to the loading bay LB of the lithographic apparatus 100 or 100’. These devices, which are often collectively referred to as the track, are under the control of a track control unit TCU, which is itself controlled by asupervisory control system SCS, which also controls the lithographic apparatus via lithography control unit LACU. Thus, the different apparatuses can be operated to maximize throughput and processing efficiency.

[0055] Example Module

[0056] FIG. 4 shows a schematic representation of a front view of an exemplary lithographic module 400, according to some aspects. Module 400 includes one or more load ports 401a, 401b. In the non-limiting example of FIG. 4, two load ports, 401a and 401b, are shown. However, aspects are not limited to two load ports, and module 400 may include more or fewer load ports. In some aspects, module 400 may include a loader, such as, for example, robotic loading arm 402, and / or one more other tools for performing operations. For example, module 400 may include one or more apparatuses to perform pre- and postexposure processes on a substrate, as described above.

[0057] Module 400 is supported, according to aspects, by frame 404. Frame 404 may, in some aspects, extend around all or part of module 400. In some aspects, frame 404 may entirely or at least partially enclose at least part of module 400. In some aspects, frame 404 may only support module 400 from below.

[0058] According to one exemplary aspect, frame 404 of module 400 is physically connected to a support frame 408. Support frame 408 may be coupled to one or more additional module(s) 490. In some aspects, additional module(s) 490 may include one or more lithographic apparatuses or lithographic cells, such as lithographic apparatuses 100, 100’, or lithographic cell 300, as described above. In some aspects, additional module(s) 490 may include one or more components of a lithographic apparatus or a lithographic cell, such that additional module(s) 490 in combination with module 400 form a single lithographic apparatus or lithographic cell. According to some aspects, module 400 may be an atmospheric reticle handler (ARH) of a lithographic apparatus.

[0059] Although support frame 408 is shown as a discrete component, aspects are not limited to this example. In some aspects, support frame 408 may correspond to the floor of a room that houses module 400 and additional module(s) 490, or a floor shared by rooms separately housing module 400 and additional module(s) 490. In some aspects, support frame 408 may include several frame components. For example, support frame 408 may include one support frame that supports only module 400, and a separate support frame that supports only additional module(s) 490, and the separate support frames may be physically connected via another support frame component or the floor. Thus, support frame 408 is any structure that provides a physical connection between module 400 and additional module(s) 490 by which vibrations are transmitted.

[0060] For simplicity of explanation, the operation of a single load port, load port 401a, will be described. However, each load port provided in module 400 may operate in a similar manner. In operation, load port 401a receives one or more patterning tool(s) and transfers the patterning tool(s) into module 400 for use in lithographic processes. Such patterning tool(s) may include a reticle, a mask, a mask pattern, etc., asdescribed above. Patterning tools are loaded into load port 401a under normal atmospheric conditions (e.g., in air). Load port 401a may, in aspects, be conditioned to achieve a controlled atmosphere. For example, after receiving the patterning tool(s), load port 401a may be placed under vacuum to remove oxygen. Load port 401a may then be filled with an inert gas, for example, nitrogen or argon. This process may be referred to as “pumping and purging” the load port 401a. Such pumping and purging, or other conditioning process(es), may be repeated a desired number of times or until the amount of oxygen in load port 401a has been reduced to a desirable level. Once load port 401a has been conditioned to achieve the desired atmosphere, the patterning tool(s) may be moved further into module 400, or into another adjacent module, such as additional module 490. In some aspects, robotic loading arm 402 may pick up each patterning tool from load port 401 and move it to another location within module 400.

[0061] According to aspects, support frame 408 may be a rigid frame that supports module 400, via frame 404, as well as other modules. For example, in some aspects, a lithographic apparatus or lithographic cell may include several modules, including module 400. As described above, the processes performed and movement of materials within such modules may cause vibrations within the support frame, which can propagate from the support frame, through the frame, and cause deflections in the load ports.

[0062] To reduce vibrations from support frame 408, module 400 includes one or more isolation structures 410a, 410b, according to aspects. Isolation structures 410a, 410b are configured, as discussed below, to reduce vibrations from support frame 408. By reducing vibrations from support frame 408, isolation structures 410a, 410b reduce deflections in load ports 401a, 401b.

[0063] FIG. 5 shows a side view of a configuration of isolation structures 510a, 510b between frame 504 and support frame 508, according to aspects. Frame 504 may couple to each of isolation structures 510a, 510b, instead of directly coupling to support frame 508. Isolation structures 510a, 510b may include oscillators and / or dampers that dampen motion in one or more directions. Thus, isolation structures 510a, 510b reduce vibrations from support frame 508 from propagating into frame 504.

[0064] As a non-limiting example, FIG. 5 shows that frame 504 may be connected to support frame 508 by a plurality of isolation structures 510a, 510b. For example, as shown in FIG. 5, isolation structures 510a, 510b may be placed at front and back corners of frame 504. Additional corresponding isolation structures may also be placed, for example, at corresponding corners on the other side of frame 504. In some aspects, frame 504 may be supported by four isolation structures, each one placed at a respective corner of frame 504. However, aspects are not limited to this configuration, and more or fewer isolation structures may be used. In some aspects, only one isolation structure, or only two or three isolation structures, may be placed at different points between frame 504 and support frame 508. On the other hand, more than four isolation structures may also be used. The number and placement of isolation structures may be determined basedon the shape of frame 504, the number of isolation structures required to adequately support frame 504 on top of support frame 508, and the stiffness of each isolation structure.

[0065] FIG. 6 shows a schematic configuration of an isolation structure 610, according to aspects. In some aspects, an isolation structure 610 may include an oscillator 614 and a damper 612. One side of each of oscillator 614 and damper 612 may be attached to support frame 608, and the other side of each of oscillator 614 and damper 612 may be attached to frame 604. In this way, frame 604 is physically, albeit indirectly, connected to support frame 608.

[0066] Although FIG. 6 shows that isolation structure 610 includes one oscillator 614 and one damper 612, aspects are not limited to this configuration, and more oscillators and / or dampers may be used. In at least one exemplary aspect, damper 612 may include two damper assemblies, positioned on opposite sides of oscillator 614. In some aspects, oscillator 614 may be surrounded by three, four, or more damper assemblies. In some aspects, a plurality of oscillators 614 may be provided on opposite sides of one damper assembly. In some aspects, a damper assembly may be surrounded by three, four, or more oscillators 614. Within aspects, isolation structure 610 may include a combination of these configurations. For example, in some aspects, two damper assemblies may be placed on opposite side of two oscillators.

[0067] According to aspects, oscillator 614 is configured to expand and contract along at least one direction. For example, in some aspects, oscillator 614 may be a spring element. In some aspects, oscillator 614 may be a torsion spring having a coil with windings in only one direction. In at least one exemplary aspect, oscillator 614 may be a complex spring having windings in opposite directions. For example, oscillator 614 may be bi-directional or double torsion spring that has a first set of coils (e.g., clockwise coils) adjacent to a second set of opposite coils (e.g., counterclockwise coils).

[0068] FIG. 7 shows a configuration of a damper assembly 712, according to some aspects. Damper assembly 712 may include a plurality of damper units 720, 722, and 724, each positioned between a portion of frame 704 and support frame 708. In some aspects, frame 704 and support frame 708 may each include projecting portions that form flat surfaces for units 720, 722, and 724. In some aspects, each damper unit 720, 722, and 724 may be formed of a viscoelastic material, such as, for example, a polymer. In at least one exemplary aspect, damper units 720, 722, and 724 are each formed of rubber. According to aspects, each damper unit has a first stiffness along a first direction and a second stiffness along a second direction. As an example, each damping unit may have a cylindrical shape, such that each damping unit has a compressive strength along an axial direction of the cylinder and a shear strength along a radial direction of the cylinder.

[0069] According to aspects, damper units 720, 722, and 724 of damper assembly 712 may be positioned to dampen vibrations in multiple directions. In aspects, each damper unit 720, 722, and 724 may dampen motion based on one or more of the compressive strength of the damping unit and the shear strength of the damping unit. In at least one exemplary aspect, damper units 720, 722, and 724 may be positioned alongdirections to be orthogonal to one another. As a non-limiting example, each damping unit 720, 722, and 724 may have a cylindrical shape, and each damping unit may be positioned so that the length of each cylinder extends in one of the x-, y-, and z-directions, so that each damping unit 720, 722, and 724 is orthogonal to each of the other damping units, respectively. By positioning the damping units in this manner, the compressive strength of each damping unit can be used to dampen motion along a particular direction, while the shear strength of the damping unit can be used to dampen motion along the other two orthogonal directions.

[0070] Although damper units are described above as being cylindrical, aspects are not limited to this example. According to aspects, damper units 720, 722, and 724 may have any shape suited to damping motion along different directions. For example, damper units 720, 722, and 724 may be formed of one or more of a prism, a cone, a pyramid, a hollow cylinder, or another polyhedron. Moreover, damper assemblies are not limited to damper assembly 712, and other damper assemblies can be used within aspects. For example, in some aspects, a damper assembly may include one or more plates that flex in at least one direction to dampen motion in that direction. In some aspects, a damper assembly may include a plurality of plates each configured to flex in the same position. In some aspects, a viscoelastic material may be provided between each of such plates.

[0071] Within aspects, the number, configuration, and arrangement of isolation structures may be chosen to satisfy a particular total stiffness. In some aspects, a single isolation structure may be used, having a number of spring elements and dampers to provide a total stiffness greater than or equal to IxlO6N / m and less than or equal to 2xl06N / m. In some aspects, a plurality of isolation structures may be provided so that a total stiffness of all of the isolation structures is greater than or equal to IxlO6N / m and less than or equal to 2xl06N / m. Such a total stiffness may provide adequate support for the frame and the module while also sufficiently damping vibrations from the support frame to the frame.

[0072] Within aspects, the isolation structure may be provided in a single location, so that the oscillator(s) and damper(s) are adjacent each other. However, aspects are not limited to this configuration. In some aspects, an isolation structure may be provided in a distributed manner, so that the oscillator(s) and damper(s) are not adjacent each other. As a non-limiting example, an oscillator may be provided at each corner of the frame, with a plurality of dampers provided between the frame and the support frame and halfway between each of the oscillators. In aspects, more or fewer oscillators or dampers may be used to achieve the desired stiffness in the isolation structure.

[0073] Various embodiments of the present systems and methods are disclosed in the subsequent list of numbered clauses:1. A module comprising:a load port configured to receive one or more patterning tools;a frame configured to support the module;a support frame in physical connection with the frame and configured to support the module and one or more additional modules; andat least one isolation structure positioned between the frame and the support frame, wherein the at least one isolation structure is configured to reduce vibrations from the support frame that contribute to a deflection of the load port.2. The module of clause 1 , whereinthe at least one isolation structure comprises at least one oscillator and at least one damper.3. The module of clause 2, whereinthe at least one oscillator comprises a spring element.4. The module of clause 3, whereinthe spring element comprises a first set of counterclockwise coils adjacent to a second set of clockwise coils.5. The module of clause 1, whereinthe at least one isolation structure is configured to have a total stiffness greater than or equal to about IxlO6N / m and less than or equal to about 2xl06N / m.6. The module of clause 2, whereinthe at least one damper comprises a plurality of damper assemblies arranged around a periphery of the at least one oscillator.7. The module of clause 6, whereinthe plurality of damper assemblies comprises two damper assemblies positioned on opposite sides of the at least one oscillator.8. The module of clause 6, whereineach of the plurality of damper assemblies comprises a plurality of damping units, each damping unit configured to dampen motion along a respective first direction based on a compressive strength of the respective damping unit.9. The module of clause 8, wherein:each of the plurality of damper assemblies comprises:a first damping unit configured to dampen motion along an x-direction based on a compressive strength of the first damping unit;a second damping unit configured to dampen motion along a y-direction based on a compressive strength of the second damping unit; anda third damping unit configured to dampen motion along a z-direction based on a compressive strength of the third damping unit; andwherein the x-direction, the y-direction, and the z-direction represent orthogonal directions in a three-dimensional space.10. The module of clause 8, whereineach of the plurality of damper assemblies is further configured to dampen, based on a shear strength of the respective damping unit, motion along directions other than the first direction.11. The module of clause 8, whereineach of the plurality of damping units comprises a viscoelastic material having a first stiffness along an axial direction and a second stiffness along a shear direction.12. The module of clause 11, whereineach damping unit of the plurality of damping units is positioned so that the first stiffness along the axial direction corresponds to the first direction.13. The module of clause 6, whereineach damper assembly comprises at least one plate configured to flex in a single direction so as to dampen motion along the single direction.14. The module of clause 13, whereineach damper assembly comprises a plurality of plates configured to flex in the single direction so as to dampen motion along the single direction.15. The module of clause 14, whereina viscoelastic material is positioned between each plate of the plurality of plates.16. The module of clause 1, whereinthe at least one isolation structure comprises a plurality of isolation structures.17. The module of clause 16, whereinthe plurality of isolation structures are positioned beneath respective corners of the frame.18. The module of clause 17, whereineach of the plurality of isolation structures is configured to have a total stiffness greater than or equal to about IxlO6N / m and less than or equal to about 2xl06N / m.19. The module of clause 1, whereinthe at least one isolation structure comprises a plurality of oscillators and a plurality of dampers positioned at separate locations on the support frame.20. The module of clause 1 , whereinthe module comprises an atmospheric reticle handler (ARH) of a lithographic apparatus

[0074] It is to be understood that the phraseology or terminology herein is for the purpose of description and not of limitation, such that the terminology or phraseology of the present specification is to be interpreted by those skilled in relevant art(s) in light of the teachings herein.

[0075] The present disclosure has been described above with the aid of functional building blocks illustrating the implementation of specified functions and relationships thereof. The boundaries of these functional building blocks have been arbitrarily defined herein for the convenience of the description. Alternate boundaries can be defined so long as the specified functions and relationships thereof are appropriately performed. The foregoing description of specific aspects will so fully reveal the general nature of the present disclosure that others can, by applying knowledge within the skill of the art, readily modify and / or adapt for various applications such specific aspects, without undue experimentation and without departing from the general concept of the present disclosure. Therefore, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed aspects, based on the teaching and guidance presented herein.

[0076] It is to be understood that the Detailed Description section, and not the Summary and Abstract sections, is intended to be used to interpret the claims. The Summary and Abstract sections can set forth one or more, but not necessarily all, aspects of the present disclosure as contemplated by the inventor(s), and thus, are not intended to limit the present disclosure and the appended claims in any way. The breadth and scope of the protected subject matter should not be limited by any of the above-described aspects, but should be defined in accordance with the following claims and their equivalents.

Claims

CLAIMS1. A module comprising:a load port configured to receive one or more patterning tools;a frame configured to support the module;a support frame in physical connection with the frame and configured to support the module and one or more additional modules; andat least one isolation structure positioned between the frame and the support frame, wherein the at least one isolation structure is configured to reduce vibrations from the support frame that contribute to a deflection of the load port.

2. The module of claim 1 , whereinthe at least one isolation structure comprises at least one oscillator and at least one damper.

3. The module of claim 2, wherein:the at least one oscillator comprises a spring element; andthe spring element comprises a first set of counterclockwise coils adjacent to a second set of clockwise coils.

4. The module of claim 1 , whereinthe at least one isolation structure is configured to have a total stiffness greater than or equal to about IxlO6N / m and less than or equal to about 2xl06N / m.

5. The module of claim 2, whereinthe at least one damper comprises a plurality of damper assemblies arranged around a periphery of the at least one oscillator.

6. The module of claim 5, whereinthe plurality of damper assemblies comprises two damper assemblies positioned on opposite sides of the at least one oscillator.

7. The module of claim 5, whereineach of the plurality of damper assemblies comprises a plurality of damping units, each damping unit configured to dampen motion along a respective first direction based on a compressive strength of the respective damping unit.

8. The module of claim 7, wherein:each of the plurality of damper assemblies comprises:a first damping unit configured to dampen motion along an x-direction based on a compressive strength of the first damping unit;a second damping unit configured to dampen motion along a y-direction based on a compressive strength of the second damping unit; anda third damping unit configured to dampen motion along a z-direction based on a compressive strength of the third damping unit; andwherein the x-direction, the y-direction, and the z-direction represent orthogonal directions in a three-dimensional space.

9. The module of claim 7, whereineach of the plurality of damper assemblies is further configured to dampen, based on a shear strength of the respective damping unit, motion along directions other than the first direction.

10. The module of claim 7, whereineach of the plurality of damping units comprises a viscoelastic material having a first stiffness along an axial direction and a second stiffness along a shear direction; andeach damping unit of the plurality of damping units is positioned so that the first stiffness along the axial direction corresponds to the first direction.

11. The module of claim 5, wherein:each damper assembly comprises at least one plate configured to flex in a single direction so as to dampen motion along the single direction or12. The module of claim 11, wherein:each damper assembly comprises a plurality of plates configured to flex in the single direction so as to dampen motion along the single direction; anda viscoelastic material is positioned between each plate of the plurality of plates.

13. The module of claim 1, wherein:the at least one isolation structure comprises a plurality of isolation structures;the plurality of isolation structures are positioned beneath respective corners of the frame; and each of the plurality of isolation structures is configured to have a total stiffness greater than or equal to about IxlO6N / m and less than or equal to about 2xl06N / m.

14. The module of claim 1, whereinthe at least one isolation structure comprises a plurality of oscillators and a plurality of dampers positioned at separate locations on the support frame.

15. The module of claim 1 , whereinthe module comprises an atmospheric reticle handler (ARH) of a lithographic apparatus.

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