Semiconductor production device, semiconductor device inspection device, semiconductor device inspection method, and semiconductor device production method

Abstract

Provided is a semiconductor production device that makes it possible to reduce product defects.　A semiconductor production device according to the present invention comprises a stage on which a die is placed, an imaging device that captures images of the die on the stage, and a control device that can perform image processing on image data captured by the imaging device to inspect a peripheral region of the die using brightness values.

Description

Semiconductor manufacturing apparatus, inspection apparatus for semiconductor device, inspection method for semiconductor device, and manufacturing method for semiconductor device

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and is applicable, for example, to a die bonder including an intermediate stage.

[0002] As one step of a manufacturing process of a semiconductor device, a die divided from a wafer is picked up and placed on an intermediate stage, and the die picked up from the intermediate stage is bonded to a substrate. For example, based on an imaging result of the intermediate stage, it is determined whether a plurality of dies can be adsorbed collectively, and a collective adsorption control means for collectively adsorbing a plurality of dies by controlling a bonding head may be used (for example, Japanese Patent Application Laid-Open No. 2,012-248,778).

[0003] Japanese Patent Application Laid-Open No. 2,012-248,778

[0004] An object of the present disclosure is to provide a technology capable of reducing product defects in a semiconductor manufacturing apparatus. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0005] Briefly explaining the outline of typical ones of the present disclosure is as follows. That is, a semiconductor manufacturing apparatus includes a stage on which a die is placed, an imaging device that images the die on the stage, and a control device configured to be able to inspect a peripheral region of the die with a luminance value by performing image processing on image data imaged by the imaging device.

[0006] According to the present disclosure, product defects in a semiconductor manufacturing apparatus can be reduced.

[0007] Figure 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. Figure 2 is a diagram illustrating the schematic configuration as viewed from the direction of arrow A in Figure 1. Figure 3 is a schematic cross-sectional view showing the main part of the wafer supply unit shown in Figure 1. Figure 4 is a flowchart illustrating a method for manufacturing a semiconductor device using the die bonder shown in Figure 1. Figure 5 is a diagram illustrating an example of a die placed on the intermediate stage as viewed from the direction of arrow A in Figure 1. Figure 6 is a flowchart illustrating the double die detection process in Figure 4. Figure 7 is a diagram schematically illustrating the double die determination situation in Figure 6. Figure 8 is a diagram illustrating an example of the die bonder monitor screen in Figure 7. Figure 9 is a diagram illustrating the change in the double die inspection area in an embodiment. Figure 10 is a diagram illustrating area estimation for double die detection in an embodiment. Figure 11 is a flowchart illustrating double die detection in a first modified example. Figure 12 is a diagram illustrating the movement operation of the double die in a second modified example.

[0008] Embodiments and modified examples will be described below with reference to the drawings. However, in the following description, the same reference numerals will be used for identical components, and repeated explanations may be omitted. In addition, to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment. Furthermore, the dimensional relationships and ratios of each element do not necessarily match between multiple drawings.

[0009] The configuration of a die bonder, which is one embodiment of a semiconductor manufacturing apparatus, will be described using Figures 1, 2, and 3. Figure 1 is a schematic top view showing an example of the configuration of a die bonder in the embodiment. Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1. Figure 3 is a schematic cross-sectional view showing the main part of the wafer supply section shown in Figure 1.

[0010] The die bonder 1 is broadly composed of a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-to-back direction of the die bonder 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-and-down direction. The wafer supply unit 10 is located on the front side of the die bonder 1, and the bonding unit 40 is located on the rear side.

[0011] The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding base 12, a peeling unit 13, and a wafer recognition camera 14.

[0012] The wafer cassette lifter 11 moves a wafer cassette (not shown) containing multiple wafer rings WR up and down to the wafer transport height. The wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. The wafer extractor (not shown) removes the wafer rings WR from the wafer cassette (not shown) and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette (not shown).

[0013] The wafer holder 12 includes an expand ring 121 for holding the wafer ring WR, and a support ring 122 that is held by the wafer ring WR and horizontally positions the dicing tape DT. The peeling unit 13 is positioned inside the support ring 122.

[0014] A wafer W is bonded (attached) to a dicing tape DT, and the wafer W is divided into multiple dies D. The dicing tape DT is held in a wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the dies D are semiconductor chips or glass chips. As shown in Figure 3, a film-like adhesive material DF called a die attach film (DAF) may be attached between the wafer W and the dicing tape DT. The adhesive material DF hardens when heated. This film-like adhesive material DF is cut simultaneously with the cutting of the dies D, and is divided into individual dies D.

[0015] The wafer holder 12 moves in the X1-X2 and Y1-Y2 directions by a drive unit (not shown) to move the die D to be picked up to the position of the peeling unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 moves vertically by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

[0016] The wafer recognition camera 14 recognizes the pickup position of the die D to be picked up from the wafer W and performs surface inspection of the die D.

[0017] The pickup unit 20 includes a pickup head 21 and a pickup head table 23. The pickup head 21 is provided with a collet 22 that adsorbs and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head table 23 moves the pickup head 21 in the Z1-Z2 direction, Y1-Y2 direction, and X1-X2 direction. The pickup head table 23 may also rotate the pickup head 21.

[0018] The intermediate stage section 30 includes an intermediate stage 31 on which the die D is placed, a stage recognition camera 34 which is an imaging device for recognizing the die D on the intermediate stage 31, and an illumination device 35. The intermediate stage 31 is equipped with suction holes (not shown) for attracting the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is both a placement stage on which the die D is placed and a pickup stage on which the die D is picked up. The illumination device 35 is, for example, a coaxial illumination device.

[0019] The bonding unit 40 includes a bond head 41, a bond head table 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that adsorbs and holds the die D at its tip. The bond head table 43 moves the bond head 41 in the Z1-Z2, Y1-Y2, and X1-X2 directions. The bond head table 43 may also rotate the bond head 41. The substrate recognition camera 44 images the substrate S and recognizes the bond position. Here, the substrate S is, for example, a wiring board, a lead frame, a glass substrate, etc. Multiple product areas (hereinafter referred to as package areas P) that will ultimately become one package are formed on the substrate S. Also, position recognition marks (not shown) for the package areas P are formed on the substrate S. The bond stage 46 is raised when the die D is placed on the substrate S to support the substrate S from below. The bond stage 46 has a suction hole (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The bond stage 46 also has a heating section (not shown) for heating the substrate S.

[0020] With this configuration, the bond head 41 corrects its pickup position and orientation based on the image data from the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die onto the package area P of the substrate S based on the image data from the substrate recognition camera 44, or bonds it by stacking it on top of a die that has already been bonded onto the package area P of the substrate S.

[0021] The transport unit 50 includes transport claws 51 that grasp and transport the substrate S, and a transport lane 52 on which the substrate S moves. The substrate S moves in the X1 direction by driving nuts (not shown) of the transport claws 51, which are provided on the transport lane 52, with a ball screw (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate discharge unit 70 and hands over the substrate S to the substrate discharge unit 70.

[0022] The substrate supply unit 60 takes the substrates S that have been stored in a transport jig (not shown) and delivered, and supplies them to the transport unit 50. The substrate discharge unit 70 stores the substrates S that have been transported by the transport unit 50 into a transport jig (not shown).

[0023] As shown in Figure 1, the control unit 80 is configured as a computer having a CPU (Central Processing Unit) 81, a storage device 82, and an input / output device 83. The control unit 80 is also called a control device or controller. The storage device 82 has a main memory 82a and an auxiliary storage device 82b. The main memory 82a is composed of RAM (Random Access Memory) which stores processing programs and the like. The auxiliary storage device 82b is composed of an HDD (Hard Disk Drive) or SSD (Solid State Drive) which stores control data and image data necessary for control. The processing program is a process recipe which describes the procedures and conditions for processing.

[0024] The input / output device 83 includes an image acquisition device 83a, a motor control device 83b, an I / O signal control device 83c, a monitor 83d, and an input device 83e. The image acquisition device 83a acquires image data from an optical system such as a substrate recognition camera 44. The motor control device 83b controls the drive units of the wafer supply unit 10, such as the XY table (not shown), the pickup head table 23, and the bond head table 43. The I / O signal control device 83c acquires signals from various sensors and outputs electrical signals to control the device. The monitor 83d displays the device status and information. The input device 83e is a pointing device such as a touch panel for inputting operator instructions, a keyboard, or a mouse for operating the monitor 83d.

[0025] A part of the semiconductor device manufacturing process using die bonder 1 (method of manufacturing a semiconductor device) will be explained with reference to Figure 4. Figure 4 is a flowchart showing the method of manufacturing a semiconductor device using die bonder shown in Figure 1. In the following explanation, the operation of each part constituting die bonder 1 is controlled by control unit 80.

[0026] (Wafer loading process: process S1) A wafer cassette (not shown) containing wafer rings WR is loaded into the wafer cassette lifter 11. The loaded wafer rings WR are supplied (loaded) into the wafer holder 12.

[0027] (Substrate loading process: process S2) The transport jig containing the substrate S is loaded into the substrate supply unit 60. In the substrate supply unit 60, the substrate S stored in the transport jig is removed from the transport jig. It is then supplied (loaded) to the bonding unit 40 via the transport unit 50.

[0028] (Pickup process: process S3) After process S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is imaged by the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data acquired by the imaging. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder 1 is calculated and the die D is positioned. The die position reference point is set in advance to a predetermined position on the wafer holder 12 as the initial setting of the device. By processing the image data, the surface inspection of the die D is performed.

[0029] The positioned die D is peeled from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D, peeled from the dicing tape DT, is attracted and held by the collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0030] The die D on the intermediate stage 31 is imaged by the stage recognition camera 34, and the die D is positioned and its surface inspected based on the image data acquired by the imaging. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder 1 is calculated, and positioning is performed. The die position reference point is a predetermined position on the intermediate stage 31, which is held as the initial setting of the device. The surface inspection of the die D is performed by processing the image data. After that, the double die detection process, which will be described later, is performed.

[0031] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0032] (Bonding process: process S4) The substrate S is transported to the bonding stage 46 by the transport unit 50. The substrate S placed on the bonding stage 46 is imaged by the substrate recognition camera 44, and image data is acquired through imaging. The amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated by image processing of the image data. The substrate position reference point is a predetermined position of the bonding unit 40, which is held in advance as the initial setting of the device.

[0033] In step S3, the suction position of the bond head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet 42. The die D is bonded to a predetermined location on the substrate S supported by the bond stage 46 by the bond head 41, which has picked up the die D from the intermediate stage 31. The die D bonded to the substrate S is imaged by the substrate recognition camera 44, and an inspection is performed based on the image data acquired by the image to determine whether the die D has been bonded to the desired position (relative position inspection of die D and substrate S), etc.

[0034] The bond head 41, which has bonded die D to substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to substrate S. This is repeated until die D is bonded to all package areas P of substrate S.

[0035] (Substrate unloading process: process S5) The substrate S to which the die D has been bonded is transported from the bonding section 40 to the substrate unloading section 70 by the transport section 50. In the substrate unloading section 70, the substrate S is removed and stored in a transport jig (not shown) and the substrate S is unloaded. The transport jig (not shown) containing the substrate S is unloaded from the die bonder 1.

[0036] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, the transport jig containing substrate S with die D mounted on it is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown) to complete the semiconductor package.

[0037] Next, the state of the die in the intermediate stage section 30 will be explained using Figure 5. Figure 5 is a diagram illustrating an example of a die placed on the intermediate stage as viewed from the direction of arrow A in Figure 1. The pickup head 21 moves relative to the intermediate stage 31 in the direction of the dashed arrow.

[0038] The die D1, held by the collet 22 of the pickup head 21, is placed on the intermediate stage 31. At this time, unlike in Figure 3 above, the peeling unit 13 may not only peel off the dicing tape DT, but also other than the die D1 that is to be picked up. For example, due to a poor cut of the film-like adhesive material DF between die D1 and the adjacent die D2, die D1 and die D2 may be connected via the film-like adhesive material DF, and the adjacent die D2 may also be placed together. This state shown in Figure 5 is called a double die state. If this double die state, which is a dicing defect, is bonded to the substrate S transported to the bond stage 46 by the collet 42 of the bond head 41, it will cause a product defect.

[0039] The die D1, which is picked up by the pickup unit 20 and placed on the intermediate stage 31, undergoes a surface inspection to check for any abnormalities. However, the adjacent die D2, which moves at the same time, is not subject to inspection. Therefore, the double-die state cannot be detected during the suction process of the intermediate stage 31 by the bond head 41.

[0040] To detect this double die, a double die inspection method (detection process) is performed between the pickup process (process S3) and the bonding process (process S4) described above. The flow of the double die detection process will now be explained. Figure 6 is a flowchart illustrating the double die detection process in Figure 4. Figure 7 is a diagram schematically illustrating the double die determination status in Figure 6. Figure 8 is a diagram illustrating an example of the die bonder monitor screen in Figure 7. Each process is controlled and executed by the control unit 80. In this embodiment, an example of inspection in four inspection areas adjacent to the X and Y sides of the picked-up die D3 is shown. The target of the inspection areas around the picked-up die D3 can be changed as appropriate by the control unit 80, for example, from at least one inspection area to all eight inspection areas around the picked-up die. Here, the X side is the side extending in the X direction, and the Y side is the side extending in the Y direction. The intermediate stage 31, stage recognition camera 34, lighting device 35, and control unit 80 constitute a semiconductor inspection apparatus.

[0041] By the above-described pickup process (process S3), the desired die D3 is picked up from the DT and placed on the intermediate stage 31. The die D3 on the intermediate stage 31 is imaged by the stage recognition camera 34, the image data is processed, and surface inspection and position recognition are performed.

[0042] (Peripheral area estimation process: process S31) The X side a and Y side b of the imaged die D3 are calculated, and at least one inspection area of the peripheral area is estimated.

[0043] (Inspection area identification process: process S32) Based on the above-described X side a and Y side b, the upper, lower, left, and right inspection areas E1, E2, E3, and E4, which are the peripheral parts of the die D3, are determined. At this time, not only the area equivalent to the die D3 but also the enlargement and reduction of the inspection area described later are possible.

[0044] (Luminance value measurement process: process S33) Irradiating light is irradiated from the lighting device 35 to the inspection areas E1, E2, E3, and E4 specified in process S32. Next, the luminance value in each area is measured by image processing of the captured image in the control unit 80, and when there are multiple measurements, the average luminance value is obtained.

[0045] (Double die determination process: process S34) Subsequently, using the luminance values of the inspection areas E1, E2, E3, and E4 obtained in the above-described process S33, it is determined whether or not it is in a double die state. At this time, for example, if the measured luminance value or the average luminance value falls outside the range of the preset upper and lower threshold values of the luminance value in at least one inspection area, it is suspected that there is at least one adjacent die to the die D3, that is, a state including a double die. In other words, in this double die determination process for checking the presence or absence of this adjacent die (residual inspection), when the luminance value is extremely small, that is, dark, or extremely large, that is, bright, it is highly likely that the picked-up die D3 does not exist alone on the intermediate stage 31. Also, since various materials are used for the intermediate stage 31 or the die D3, these luminance values may vary greatly. However, if the threshold value of the luminance value is appropriately changed according to the material even for such material changes, a double die can be determined.

[0046] For example, as shown in FIG. 7, when the range of the average luminance value is 5 to 25 cd / m ２ there is no die adjacent to D3 because the luminance values of the inspection areas of E1, E2, and E3 are within the threshold range. On the other hand, since the inspection area of E4 with an average luminance value of 100 cd / m ２ is above the upper threshold, it is determined to be a double die where die D4 is adjacent to die D3.

[0047] FIG. 8 shows an example of a monitor screen for determining the state of FIG. 7. The upper and lower threshold values of the luminance value and the die size ratio of the inspection areas of X and Y at the lower part of the monitor screen are directly input as numerical values by the input device 83e to set the inspection conditions. Regarding the upper and lower threshold values of the luminance value, the luminance values where there may be adjacent dies are investigated and input in advance. The average luminance value is calculated by irradiating the coaxial illumination device (not shown) of the die bonder 1. From this average luminance value and the upper and lower threshold values of the luminance value, the possibility of the existence of adjacent dies in the inspection areas from E1 to E4 is determined and displayed as a comprehensive determination.

[0048] When all of the peripheral areas of the inspection target are within the range of the upper and lower threshold values of the luminance value, it is determined that it is not a double die, and the process proceeds to the next bonding process (S4), and die D3 is bonded to a predetermined location on the substrate S.

[0049] (Discarding process: step S35) When it is determined to be a double die in which at least one adjacent die is detected, die D3 is adsorbed by the collet 42 of the bond head 41 and moved above the discard unit 100 provided between the intermediate stage portion 30 and the bonding portion 40. Then, the bond head 41 descends, the adsorption of the collet 42 is released, and die D3 and the adjacent die D4 are automatically discarded together into the discard unit 100.

[0050] Even in this case of discarding, the bonding position information to the predetermined location on the substrate S supported by the bond stage 46 is maintained, so the process returns to the pickup process (step S3) again to pick up the die. Then, the above-described double die detection flow is repeated to maintain the productivity of the die bonder 1 and suppress the occurrence of product defects.

[0051] Such double-die detection is displayed on the monitor 83d of the die bonder 1, as shown in Figure 8, allowing the operator to confirm it. This confirmation by the operator allows them to switch the die bonder 1 to manual operation if a double-die occurs.

[0052] Next, we will describe the detection of double dies in the area surrounding a die that has shifted from its predetermined position and is placed on the intermediate stage 31 due to a malfunction of the die bonder 1 or the like. Figure 9 is a diagram illustrating the change in the double die inspection area in the embodiment.

[0053] Normally, the picked-up die is placed on the center C0 of the intermediate stage 31, as shown by the dashed line die D0. However, due to issues such as suction failure by the collet 22 of the pickup head 21, release of suction during placement, or positioning errors by the wafer recognition camera 14, the die may not be placed on the center C0 of the intermediate stage 31. For example, die D5 may be placed at the position C1, indicated by the ×. Even in this case, the control unit 80 can still estimate and identify the inspection area of ​​the surrounding region as described above. Using the placed die D5 as a reference, the control unit 80 follows die D5 in the surrounding region estimation process (process S31) and the inspection area identification process (process S32). This following allows the inspection areas E5, E6, E7, and E8 of the surrounding region of die D5 to be targeted. The inspection flow in this case is the same as processes S31 to S36 described above.

[0054] In the surrounding area estimation process (step S31) described above, the detection area was estimated based on the X side a and Y side b of the picked-up die D3. However, the area is not limited to this and can be appropriately changed depending on the state of the adjacent dies in a double die. This area modification will be explained below. Figure 10 is a diagram illustrating area estimation for double die detection in an embodiment.

[0055] If the lengths of sides X a and Y b of die D3 are applied directly to the surrounding area, the inspection area E1 will be 1:1 relative to die D3, which is the same as the state shown in Figure 8. On the other hand, if numerical values ​​are entered for the inspection area die size ratio X and Y set on the monitor screen in Figure 8, for example, 2.0 for X and 1.5 for Y, the area ratio relative to E1 becomes 1:3, and the detection area can be expanded to inspection area E9. Also, for example, if 0.5 for X and 0.2 for Y are entered, the area ratio relative to E1 becomes 1:0.1, and the detection area can be reduced to area E10.

[0056] According to this embodiment, at least one of the following effects is achieved.

[0057] Since the double die inspection is performed on the top, bottom, left, and right sides of the die placed on the intermediate stage 31, it is possible to detect a double die no matter where in the surrounding area it occurs.

[0058] Even if the position of the die placed on the intermediate stage 31 shifts, the control unit 80 will also inspect the surrounding area, allowing for the determination of a double die.

[0059] Because the inspection area of ​​the surrounding region can be tracked, enlarged, or reduced, residual inspection of adjacent dies is possible even when the size of the intermediate stage is such that adjacent dies that have been peeled off together due to poor cutting of the adhesive material DF have an angle with the die being picked up. For example, by reducing the inspection area, it is possible to measure the brightness value at a location close to the die being picked up, and by expanding the inspection area, it is possible to measure the average brightness value corresponding to the variation in brightness value due to the angle.

[0060] By detecting and addressing double dies before the bonding process, product defects in semiconductor manufacturing equipment can be reduced.

[0061] <Modifications> Below are some examples of typical modifications of the embodiments. In the following descriptions of modifications, the same reference numerals as in the embodiments described above may be used for parts having the same configuration and function as those described in the embodiments described above. In describing such parts, the descriptions in the embodiments described above may be appropriately referenced to the extent that they do not contradict the technical standards. Furthermore, some of the embodiments described above, and all or some of the modifications, may be applied in combination as appropriate, to the extent that they do not contradict the technical standards.

[0062] (First Modification) The detection of a double die in the first modification will be explained. Figure 11 is a flowchart illustrating the detection of a double die in the first modification.

[0063] In the configuration described above, the double-die state was determined by a luminance threshold. However, depending on the surface shape or pattern of the die being picked up, the luminance value of the die itself, or the average luminance value, may be extremely small. In this case, the luminance values ​​or average luminance values ​​of other inspection areas in the surrounding region may also fall outside the upper and lower threshold ranges, making it impossible to determine if a die is double-die. In this case, the die placed on the intermediate stage 31 remains as is, and the illumination value of the illumination device 35 is increased by the control unit 80 to remeasure the luminance values ​​of the surrounding inspection areas.

[0064] As shown in the inspection flow in Figure 11, if a determination cannot be made in the double die determination process (step S34), which is a residual inspection process for the die, the illumination value increase process (step S36) is performed, and the process returns to imaging by the stage recognition camera 34 in the pickup process (step S3). By increasing the illumination value in this way, it becomes possible to measure the brightness value of the surrounding area more accurately, and a double die can be determined.

[0065] Furthermore, if a double die is detected, the same discarding process (step S37) is performed as in the embodiment described above, and a new die is picked up in the pick-up process (step S3).

[0066] (Second Modification) The processing of the double die in the second modification will be explained. Figure 12 is a diagram showing the movement of the double die in the second modification. The pickup head 21 moves relative to the wafer holder 12 in the direction of the dashed arrow.

[0067] In the configuration described above, if a double die is detected, the picked-up die D3 and the adjacent die D4, which is in a double die state, are discarded to the waste unit 100. However, in some die bonders, it may not be possible to provide this waste unit 100 due to space limitations. In this apparatus, if at least one adjacent die is detected in the double die detection process (process S34), which is a die residual inspection process, for example, if it is determined that die D7 and die D8 are in a double die state, the pick-up head 21 transfers them from the intermediate stage 31 to the wafer W on the wafer holder 12 and places them back on the wafer, as shown by the dashed line in Figure 12. The control unit 80 can also register these dies D7 and D8 as unusable.

[0068] The unusable dies D7 and D8 are then transported together with the wafer ring WR when it is returned to the wafer cassette (not shown) via the wafer cassette lifter 11, and are subsequently discarded. This method can be performed simply by setting the control unit 80, and does not require the provision of a new waste unit 100 as described in the embodiment, thus avoiding the need to complicate the device configuration.

[0069] The disclosures made by the Disclosers have been described in detail above based on embodiments and modifications, but it goes without saying that the disclosures are not limited to the embodiments and modifications described above and can be modified in various ways.

[0070] In each of the above-described modifications, the same effects as in this embodiment can be achieved, namely, detection and determination of double dies and reduction of product defects.

[0071] In the embodiment, an example using a die attach film (DAF) was described, but a preform section for applying adhesive to the substrate may be provided instead of using a DAF. The preform section includes a preform head for applying paste-like adhesive, a preform table for driving the preform head in the vertical and horizontal directions, and a preform stage for holding the substrate.

[0072] In this embodiment, an intermediate stage section 30 is provided between the pickup section 20 and the bonding section 40. The die D picked up from the pickup section 20 by the pickup head 21 is placed on the intermediate stage 31, and the die D is picked up again from the intermediate stage 31 by the bond head 41 and bonded to the transported substrate S. However, the die D picked up from the pickup section 20 by the bond head 41 may be bonded to the substrate S.

[0073] Furthermore, although the embodiment includes one pickup head 21 and one bond head 41, there may be two or more of each. Also, although the embodiment includes an intermediate stage 31, the intermediate stage 31 may be omitted.

[0074] In this embodiment, bonding is performed with the surface of die D facing upwards, but after picking up die D, the die D may be flipped over and bonded with the back surface facing upwards. This device is called a flip-chip bonder.

[0075] In this embodiment, a die bonder was used as an example, but it can also be applied to semiconductor manufacturing equipment that places picked-up dies onto a tray.

[0076] Furthermore, although a semiconductor manufacturing apparatus was described in the embodiment, it can also be applied to mounting apparatus for mounting electronic components onto printed circuit boards.

[0077] 1... Die bonder (semiconductor manufacturing equipment) 31... Intermediate stage (stage) 34... Stage recognition camera (imaging device) 80... Control unit (control device)

Claims

1. A semiconductor manufacturing apparatus comprising: a stage on which a die is placed; an imaging device for imaging the die on the stage; and a control device configured to perform image processing on the image data captured by the imaging device so as to enable inspection of the area surrounding the die by brightness value.

2. A semiconductor manufacturing apparatus according to claim 1, wherein the control device is configured to perform residual inspection of adjacent dies in at least one inspection area in the peripheral region of the die.

3. A semiconductor manufacturing apparatus according to claim 2, wherein the control device is configured to use irradiation light irradiated onto the inspection area in the residual inspection.

4. A semiconductor manufacturing apparatus according to claim 3, wherein the control device is configured to make a determination in the residual inspection based on the brightness value or average brightness value within the inspection area.

5. A semiconductor manufacturing apparatus according to claim 4, wherein the control device is configured to be able to follow, enlarge, or reduce the inspection area with respect to the die.

6. A semiconductor manufacturing apparatus according to claim 4, wherein the control device is configured to discard the die and the adjacent die when at least one adjacent die is detected in the residual inspection.

7. A semiconductor manufacturing apparatus according to claim 4, wherein the control device is configured such that, if a determination cannot be made based on the brightness value or the average brightness value within the inspection area, the illumination value of the irradiation light is increased, the die and the inspection area are imaged again, and the residual inspection is performed again.

8. A semiconductor manufacturing apparatus according to claim 4, wherein the control device is configured to transfer the die and the adjacent die from the stage to the wafer of the wafer holder when at least one adjacent die is detected in the residual inspection.

9. An inspection apparatus for a semiconductor device comprising: a stage on which a die is placed; an imaging device for imaging the die on the stage; and a control device configured to perform image processing on the image data captured by the imaging device so as to enable inspection of the area surrounding the die by brightness value.

10. Inspection apparatus for a semiconductor device according to claim 9, wherein the control device is configured to perform residual inspection of adjacent dies in at least one inspection area of ​​the peripheral region of the die.

11. Inspection apparatus for semiconductor device according to claim 10, wherein the control device is configured to use irradiation light irradiated onto the inspection area in the residual inspection.

12. Inspection apparatus for semiconductor device according to claim 11, wherein the control device is configured to make a determination in the residual inspection based on the brightness value or average brightness value within the inspection area.

13. Inspection apparatus for a semiconductor device according to claim 12, wherein the control device is configured to track, enlarge, or reduce the inspection area with respect to the die.

14. A semiconductor device inspection method in a semiconductor inspection apparatus comprising: a stage on which a die is placed; an imaging device for imaging the die on the stage; and a control device configured to perform image processing on the image data captured by the imaging device so that the peripheral region of the die can be inspected by brightness value measurement, the method comprising: a step of performing residual inspection of adjacent dies in at least one inspection area of ​​the peripheral region of the die; and a step of using illumination light irradiated onto the inspection area in the residual inspection.

15. A method for manufacturing a semiconductor device, including a method for inspecting a semiconductor device according to claim 14.

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