Semiconductor device and semiconductor device assembly

Abstract

This semiconductor device comprises a semiconductor element, a lead, an insulating substrate, and a sealing resin. The lead includes a joint portion and a terminal portion. The joint portion has a main surface and a rear surface which respectively face a first side and a second side in the thickness direction. The sealing resin has a third resin surface which faces a first side in a first direction orthogonal to the thickness direction. The sealing resin covers a part of the insulating substrate, the semiconductor element, and the joint portion. The terminal portion includes a first section which extends from the third resin surface to the first side in the first direction when viewed in the thickness direction, and a second section which is located on the first side in the first direction relative to the first section and is used for mounting. The insulating substrate is located on a second side in the first direction relative to the joint portion and is joined to the rear surface.

Description

Semiconductor Device and Semiconductor Device Assembly

[0001] The present disclosure relates to a semiconductor device and a semiconductor device assembly.

[0002] Semiconductor devices including semiconductor elements have been proposed in various configurations. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes leads, a semiconductor element, and a sealing resin. The semiconductor element is mounted on a lead (die pad portion). The sealing resin covers a part of the lead and the semiconductor element. The semiconductor element is mounted on the first lead main surface facing one side in the thickness direction of the die pad portion. The first lead back surface facing the opposite side (the other side in the thickness direction) of the first lead main surface of the die pad portion is exposed from the sealing resin and functions as a heat dissipation surface. With this structure, the heat generated by the semiconductor element can be efficiently dissipated from the back surface side (heat dissipation surface) of the die pad portion. The first terminal portion of the lead is exposed from the sealing resin. The tip of the first terminal portion is located on one side in the thickness direction of the sealing resin and is used, for example, for surface mounting on a circuit board or the like. When a heat sink is attached to the above semiconductor device, an insulating sheet needs to be provided between the back surface (first lead back surface) of the die pad portion and the heat sink to prevent improper discharge from the die pad portion on which the semiconductor element is mounted to the heat sink.

[0003] International Publication No. 2023 / 100731

[0004] [Summary] One problem of the present disclosure is to provide a semiconductor device improved from the conventional one. In particular, in view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device suitable for ensuring insulation between a semiconductor element and a heat dissipation surface and preventing external discharge.

[0005] A semiconductor device provided by a first aspect of this disclosure includes a semiconductor element, a first junction having a first lead main surface facing one side in the thickness direction and a first lead back surface facing the other side in the thickness direction, and a first terminal portion, the first lead being electrically connected to the semiconductor element, an insulating substrate, and a sealing resin having a first resin surface facing one side in the thickness direction, a second resin surface facing the other side in the thickness direction, and a third resin surface facing one side in a first direction perpendicular to the thickness direction, the first terminal portion having a first portion extending from the third resin surface to one side in the first direction as viewed in the thickness direction, and a second portion including a portion located on one side in the thickness direction relative to the first portion and used for mounting, the insulating substrate being located on the other side in the thickness direction relative to the first junction and bonded to the first lead back surface.

[0006] A semiconductor device assembly provided by a second aspect of the present disclosure comprises a semiconductor device relating to a first aspect of the present disclosure and a heat dissipation member integrally attached to the other side of the semiconductor device in the thickness direction.

[0007] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings.

[0008] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 3 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 4 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 5 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 6 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 7 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 8 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 9 is a front view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 10 is a side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 11 is a bottom view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 12 is a cross-sectional view along line XII-XII in Figure 11. Figure 13 is a cross-sectional view along line XIII-XIII in Figure 11. Figure 14 is a cross-sectional view along line XIV-XIV in Figure 11. Figure 15 is a cross-sectional view along line XV-XV in Figure 11. Figure 16 is a cross-sectional view showing the usage state of a semiconductor device according to the first embodiment of this disclosure, and represents the same cross-section as Figure 12. Figure 17 is a cross-sectional view showing the usage state of a semiconductor device according to the first embodiment of this disclosure, and represents the same cross-section as Figure 15. Figure 18 is a schematic diagram of a vehicle equipped with a semiconductor device according to the first embodiment of this disclosure. Figure 19 is a plan view showing a semiconductor device according to a first modification of the first embodiment of this disclosure. Figure 20 is a cross-sectional view along the line XX-XX in Figure 19. Figure 21 is a cross-sectional view showing the usage state of a semiconductor device according to a first modification of the first embodiment of this disclosure. Figure 22 is a plan view showing a semiconductor device according to a second modification of the first embodiment of this disclosure. Figure 23 is a cross-sectional view along the line XXIII-XXIII in Figure 22. Figure 24 is a cross-sectional view showing the usage state of a semiconductor device according to a second modification of the first embodiment of this disclosure. Figure 25 is a plan view showing a semiconductor device according to a third modification of the first embodiment of this disclosure. Figure 26 is a plan view showing a semiconductor device according to a fourth modification of the first embodiment of this disclosure. Figure 27 is a cross-sectional view taken along the line XXVII-XXVII in Figure 26. Figure 28 is a cross-sectional view showing the state of use of a semiconductor device according to a fourth modification of the first embodiment of the present disclosure.Figure 29 is a plan view showing a semiconductor device according to a fifth modification of the first embodiment of the present disclosure. Figure 30 is a plan view showing a semiconductor device according to a sixth modification of the first embodiment of the present disclosure. Figure 31 is a plan view showing a semiconductor device according to a seventh modification of the first embodiment of the present disclosure. Figure 32 is a bottom view of the main part of a semiconductor device according to a second embodiment of the present disclosure. Figure 33 is a cross-sectional view taken along the line XXXIII-XXXIII in Figure 32. Figure 34 is a bottom view of the main part of a semiconductor device according to a third embodiment of the present disclosure. Figure 35 is a cross-sectional view taken along the line XXXV-XXXV in Figure 34. Figure 36 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure. Figure 37 is a bottom view of the main part of a semiconductor device according to a fourth embodiment of the present disclosure. Figure 38 is a cross-sectional view taken along the line XXXVIII-XXXVIII in Figure 37. Figure 39 is a cross-sectional view showing the semiconductor device in use according to a fourth embodiment of the present disclosure.

[0009] [Detailed Description] Preferred embodiments of this disclosure will be described below with reference to the drawings.

[0010] The terms "first," "second," "third," etc., used in this disclosure are merely labels and are not necessarily intended to assign a sequence to the objects.

[0011] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is in contact with object B and located on object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, "object A overlaps with object B when viewed in a certain direction" includes, unless otherwise specified, "object A overlaps with all of object B" and "object A overlaps with a part of object B." Also, "object A (or its material) includes material C" includes "object A (or its material) consists of material C" and "the main component of object A (or its material) is material C." In addition, in this disclosure, "a surface A faces direction B (either one or the other)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B.

[0012] First Embodiment: Figures 1 to 17 show a semiconductor device according to the first embodiment of the present disclosure. The application of the semiconductor device A10 of this embodiment is not limited in any way, and it can be used in electronic devices equipped with power conversion circuits, such as DC-DC converters. The semiconductor device A10 comprises a conductive member 10, a semiconductor element 20, connecting members 31, 32, 33, a sealing resin 40, an insulating substrate 50, and a heat sink 60.

[0013] Figures 1 to 3 are perspective views showing the semiconductor device A10. Figures 4 to 6 are perspective views of the main parts of the semiconductor device A10. In Figures 4 to 6, the outline of the sealing resin 40 is shown by dashed lines. Figure 7 is a plan view showing the semiconductor device A10. Figure 8 is a bottom view showing the semiconductor device A10. Figure 9 is a front view showing the semiconductor device A10. Figure 10 is a side view showing the semiconductor device A10. Figure 11 is a bottom view of the main parts of the semiconductor device A10. In Figure 11, the outline of the sealing resin 40 is shown by dashed lines. Figure 12 is a cross-sectional view along line XII-XII in Figure 11. Figure 13 is a cross-sectional view along line XIII-XIII in Figure 11. Figure 14 is a cross-sectional view along line XIV-XIV in Figure 11. Figure 15 is a cross-sectional view along line XV-XV in Figure 11. Figures 16 and 17 are cross-sectional views showing the semiconductor device A10 in use.

[0014] In the description of the semiconductor device A10, the thickness direction (plan view direction) of the semiconductor device A10 is an example of the "thickness direction" in this disclosure and is referred to as the "thickness direction z". The direction perpendicular to the thickness direction z is referred to as the "first direction x". The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y". Furthermore, one side of the thickness direction z corresponds to the "one side of the thickness direction" in this disclosure and is referred to as the "z1 side of the thickness direction z", and the other side of the thickness direction z corresponds to the "other side of the thickness direction" in this disclosure and is referred to as the "z2 side of the thickness direction z". One side of the first direction x corresponds to the "one side of the first direction" in this disclosure and is referred to as the "x1 side of the first direction x", and the other side of the first direction x corresponds to the "other side of the first direction" in this disclosure and is referred to as the "x2 side of the first direction x". One side of the second direction y corresponds to "one side of the second direction" in this disclosure and is referred to as "the y1 side of the second direction y," and the other side of the second direction y corresponds to "the other side of the second direction" in this disclosure and is referred to as "the y2 side of the second direction y."

[0015] The conductive member 10 is a member that constitutes a conductive path to the semiconductor element 20. The conductive member 10 in this embodiment includes a first lead 11, a second lead 12, a third lead 13, and a fourth lead 14. The material of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14 is not limited and includes, for example, copper (Cu) or a copper alloy. In addition, the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14 may be plated with silver (Ag), nickel (Ni), tin (Sn), or the like in appropriate places.

[0016] As shown in Figures 1 to 15, the first lead 11 has a first joint portion 111 and a first terminal portion 112. The first joint portion 111 has a first lead main surface 1111 and a first lead back surface 1112. The first lead main surface 1111 is the surface facing the z1 side in the thickness direction z. The first lead back surface 1112 is the surface facing the z2 side in the thickness direction z.

[0017] The shape of the first joint portion 111 is not limited in any way. In the illustrated example, the first joint portion 111 is rectangular when viewed in the thickness direction z. Also, the shapes of the first lead main surface 1111 and the first lead back surface 1112 are not limited in any way, and in the illustrated example, they are rectangular when viewed in the thickness direction z.

[0018] The first terminal portion 112 has a first portion 1121 and two second portions 1122. The first portion 1121 is connected to the first joint portion 111 and extends from the first joint portion 111 toward the x1 side in the first direction x, and is parallel to the xy plane in the illustrated example. The first terminal portion 112 in this embodiment has only one first portion 1121. The shape of the first portion 1121 is not limited in any way, and in the illustrated example it is rectangular when viewed in the thickness direction z.

[0019] The two second parts 1122 include portions located on the z1 side in the thickness direction z relative to the first part 1121. The two second parts 1122 are used when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0020] In this embodiment, the two second parts 1122 extend outward in the second direction y from the x1 end of the first direction x of the first part 1121. The two second parts 1122 are at the same position in the first direction x. The shape of the second parts 1122 is not limited in any way, and in the illustrated example, each of the two second parts 1122 is rectangular in shape and extends in the second direction y when viewed in the thickness direction z. Each of the two second parts 1122 has a connecting part 1122a, a bent part 1122b, and a mounting part 1122c. The connecting part 1122a is connected to the first part 1121 and extends from the first part 1121 in the second direction y. The bent part 1122b is connected to the bent part 1122b and is inclined with respect to the thickness direction z (yz plane) such that it is located on the z1 side of the thickness direction z as it moves away from the connecting part 1122a in the second direction y. The mounting portion 1122c is connected to the bent portion 1122b and is located on the z1 side in the thickness direction z than the bent portion 1122b. The mounting portion 1122c is the part used when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0021] The second lead 12 is located away from the first lead 11 (first joint 111) on the x2 side in the first direction x. The second lead 12 has a pad portion 121 and a plurality of second terminal portions 122.

[0022] The pad portion 121 has a second lead main surface 1211 and a second lead back surface 1212. The second lead main surface 1211 is the surface facing the z1 side in the thickness direction z. The second lead back surface 1212 is the surface facing the z2 side in the thickness direction z. A connecting member 31 is connected to the second lead main surface 1211. The shape of the pad portion 121 is not limited in any way, and in the illustrated example, it is an elongated rectangle with the second direction y as the longitudinal direction. Also, the size of the pad portion 121 in the thickness direction z is the same as that of the first joint portion 111. In the illustrated example, the position of the second lead main surface 1211 in the thickness direction z is located on the z1 side in the thickness direction z than the first lead main surface 1111 of the first joint portion 111.

[0023] Multiple second terminal portions 122 are arranged in a line in the second direction y. The second terminal portion 122 has a fourth portion 1221, a fifth portion 1222, and a sixth portion 1223.

[0024] The fourth part 1221 is connected to the pad portion 121 and extends from the pad portion 121 toward the x2 side in the first direction x, and in the illustrated example it is parallel to the xy plane. The shape of the fourth part 1221 is not limited in any way, and in the illustrated example it is rectangular (or substantially rectangular) when viewed in the thickness direction z.

[0025] The fifth part 1222 is located on the z1 side in the thickness direction z relative to the fourth part 1221. The fifth part 1222 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The fifth part 1222 has a shape that extends along the first direction x.

[0026] The sixth section 1223 is interposed between the fourth section 1221 and the fifth section 1222. The sixth section 1223 extends from the fourth section 1221 towards the z1 side in the thickness direction z. In the illustrated example, the sixth section 1223 is inclined with respect to the thickness direction z (yz plane). The shape of the sixth section 1223 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the first direction x.

[0027] The third lead 13 is located away from the first lead 11 (first joint 111) on the x2 side in the first direction x. The third lead 13 is also aligned with the second lead 12 in the second direction y. The third lead 13 has a pad portion 131 and a third terminal portion 132.

[0028] The pad portion 131 has a third lead main surface 1311 and a third lead back surface 1312. The third lead main surface 1311 is the surface facing the z1 side in the thickness direction z. The third lead back surface 1312 is the surface facing the z2 side in the thickness direction z. A connecting member 32 is connected to the third lead main surface 1311. The shape of the pad portion 131 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the thickness direction z. Also, when viewed in the thickness direction z, the pad portion 131 is smaller than the pad portion 121. Also, the size of the pad portion 131 in the thickness direction z is the same as that of the first joint portion 111 and the pad portion 121. In the illustrated example, the position of the third lead main surface 1311 in the thickness direction z is located on the z1 side in the thickness direction z than the first lead main surface 1111 of the first joint portion 111. Furthermore, the position of the third lead main surface 1311 in the thickness direction z is the same as that of the second lead main surface 1211 of the pad portion 121.

[0029] The third terminal portion 132 has a seventh portion 1321, an eighth portion 1322, and a ninth portion 1323.

[0030] The seventh section 1321 is connected to the pad section 131 and extends from the pad section 131 toward the x2 side in the first direction x, and in the illustrated example it is parallel to the xy plane. The shape of the seventh section 1321 is not limited in any way, and in the illustrated example it is rectangular (or substantially rectangular) when viewed in the thickness direction z.

[0031] The eighth part 1322 is located on the z1 side in the thickness direction z relative to the seventh part 1321. The eighth part 1322 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The eighth part 1322 has a shape that extends along the first direction x.

[0032] Part 9 1323 is interposed between Part 7 1321 and Part 8 1322. Part 9 1323 extends from Part 7 1321 towards z1 in the thickness direction z. In the illustrated example, Part 9 1323 is inclined with respect to the thickness direction z (yz plane). The shape of Part 9 1323 is not limited, and in the illustrated example, it is rectangular when viewed in the first direction x.

[0033] The fourth lead 14 is located away from the first lead 11 (first joint 111) on the x2 side in the first direction x. The fourth lead 14 is also located between the second lead 12 and the third lead 13 in the y direction. The fourth lead 14 has a pad portion 141 and a fourth terminal portion 142.

[0034] The pad portion 141 has a fourth lead main surface 1411 and a fourth lead back surface 1412. The fourth lead main surface 1411 is the surface facing the z1 side in the thickness direction z. The fourth lead back surface 1412 is the surface facing the z2 side in the thickness direction z. A connecting member 33 is connected to the fourth lead main surface 1411. The shape of the pad portion 141 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the thickness direction z. Also, when viewed in the thickness direction z, the pad portion 141 is smaller than the pad portion 121. Also, the size of the pad portion 141 in the thickness direction z is the same as that of the first joint portion 111, pad portion 121 and pad portion 131. In the illustrated example, the position of the fourth lead main surface 1411 in the thickness direction z is located on the z1 side in the thickness direction z than the first lead main surface 1111 of the first joint portion 111. Furthermore, the fourth lead main surface 1411 is located in the same position in the thickness direction z as the second lead main surface 1211 of the pad portion 121 and the third lead main surface 1311 of the pad portion 131.

[0035] The fourth terminal portion 142 has a tenth portion 1421, an eleventh portion 1422, and a twelfth portion 1423.

[0036] The tenth section 1421 is connected to the pad section 141 and extends from the pad section 141 toward the x2 side in the first direction x, and in the illustrated example it is parallel to the xy plane. The shape of the tenth section 1421 is not limited in any way, and in the illustrated example it is rectangular when viewed in the thickness direction z.

[0037] The 11th part 1422 is located on the z1 side in the thickness direction z relative to the 10th part 1421. The 11th part 1422 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The 11th part 1422 has a shape that extends along the first direction x.

[0038] The twelfth section 1423 is interposed between the tenth section 1421 and the eleventh section 1422. The twelfth section 1423 extends from the tenth section 1421 towards the z1 side in the thickness direction z. In the illustrated example, the twelfth section 1423 is inclined with respect to the thickness direction z (yz plane). The shape of the twelfth section 1423 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the first direction x.

[0039] The insulating substrate 50 is located on the z2 side in the thickness direction z with respect to the first joint portion 111 of the first lead 11. In this embodiment, the insulating substrate 50 is made of, for example, a DBC (Direct Bonded Copper) substrate. As shown in Figures 12 to 15, the insulating substrate 50 includes an insulating layer 51, a first metal layer 52, and a second metal layer 53. The insulating substrate 50 is covered with a sealing resin 40, except for a portion of the second metal layer 53.

[0040] The insulating layer 51 includes a portion interposed between the first metal layer 52 and the second metal layer 53 in the thickness direction z. The insulating layer 51 is made of a material with relatively high thermal conductivity. The insulating layer 51 is made of ceramics, for example, aluminum nitride (AlN). In addition to ceramics, the insulating layer 51 may also be made of an insulating resin sheet. The insulating layer 51 is rectangular in shape when viewed in the thickness direction z.

[0041] The first metal layer 52 is laminated on the z1 side in the thickness direction z relative to the insulating layer 51. The composition of the first metal layer 52 includes copper (Cu). The first metal layer 52 is rectangular when viewed in the thickness direction z. In the illustrated example, the periphery of the first metal layer 52 overlaps with the periphery of the insulating layer 51 when viewed in the thickness direction z. However, unlike the illustrated example, the first metal layer 52 may be surrounded by the periphery of the insulating layer 51 when viewed in the thickness direction z. The first metal layer 52 is conductively bonded to the back surface 1112 of the first lead of the first joint 111 via a conductive bonding material 19. The conductive bonding material 19 is, for example, solder. In addition, the conductive bonding material 19 may be silver (Ag) paste, calcined silver, etc.

[0042] The second metal layer 53 is laminated on the z2 side in the thickness direction z with respect to the insulating layer 51. The composition of the second metal layer 53 contains copper. The second metal layer 53 is rectangular when viewed in the thickness direction z. In the illustrated example, when viewed in the thickness direction z, the periphery of the second metal layer 53 overlaps with the periphery of the insulating layer 51. Note that, different from the illustrated example, the second metal layer 53 may be surrounded by the periphery of the insulating layer 51 when viewed in the thickness direction z.

[0043] The heat sink 60 is located on the z2 side in the thickness direction z with respect to the insulating substrate 50 (second metal layer 53). The heat sink 60 is made of a material with high thermal conductivity. The heat sink 60 is, for example, made of a metal plate containing copper in its composition. The heat sink 60 is rectangular (or substantially rectangular) when viewed in the thickness direction z. The heat sink 60 has a heat sink front surface 601 and a heat sink back surface 602. The heat sink front surface 601 is the surface facing the z1 side in the thickness direction z. The heat sink back surface 602 is the surface facing the z2 side in the thickness direction z. The heat sink front surface 601 is joined to the second metal layer 53 of the insulating substrate 50 via a joining material 59. The joining material 59 may be conductive or insulating, and for example, solder is used. The heat sink back surface 602 is exposed from the second resin surface 42 of the sealing resin 40 described later.

[0044] The heat sink 60 has a main portion 61 and an extending portion 62. The main portion 61 is located inside the sealing resin 40 when viewed in the thickness direction z. The extending portion 62 is a portion that extends outside the sealing resin 40 when viewed in the thickness direction z. More specifically, the extending portion 62 extends outside the sealing resin 40 from any one of the third resin surface 43, the fourth resin surface 44, the fifth resin surface 45, and the sixth resin surface 46 of the sealing resin 40 described later when viewed in the thickness direction z.

[0045] In the present embodiment, the extending portion 62 has a first extending portion 621 and a second extending portion 622. The first extending portion 621 extends from the sealing resin 40 (fifth resin surface 45) to the y1 side in the second direction y when viewed in the thickness direction z. The second extending portion 622 extends from the sealing resin 40 (sixth resin surface 46) to the y2 side in the second direction y when viewed in the thickness direction z. In the present embodiment, the length of the first extending portion 621 and the second extending portion 622 in the first direction x is the same as the length of the main portion 61 in the first direction x.

[0046] The first extending portion 621 has a first concave portion 621a. The first concave portion 621a is recessed toward the y2 side of the second direction y when viewed in the thickness direction z. In the illustrated example, the first concave portion 621a is located at the center of the first extending portion 621 in the first direction x and has a semi-circular shape when viewed in the thickness direction z. The second extending portion 622 has a second concave portion 622a. The second concave portion 622a is recessed toward the y1 side of the second direction y when viewed in the thickness direction z. In the illustrated example, the second concave portion 622a is located at the center of the first metal layer 522 in the first direction x and has a semi-circular shape when viewed in the thickness direction z. The first concave portion 621a and the second concave portion 622a are used when attaching the semiconductor device A10 to a heat sink 91 described later.

[0047] As shown in FIGS. 5 and 11 to 15, the semiconductor element 20 is mounted on the z1 side in the thickness direction z of the insulating substrate 50 (first metal layer 52). The semiconductor device A10 is separated from the first joint portion 111 of the first lead 11 toward the x2 side in the first direction x. In the semiconductor device A10, the semiconductor element 20 is a switching element. More specifically, it is an n-channel type and a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) having a vertical structure. Note that the semiconductor element 20 is not limited to a MOSFET. The semiconductor element 20 may be another transistor such as an IGBT (Insulated Gate Bipolar Transistor). Further, the semiconductor element 20 may be a diode. The semiconductor element 20 has a rectangular shape when viewed in the thickness direction z. The semiconductor element 20 includes a semiconductor layer 205, a first electrode 201, a second electrode 202, and a third electrode 203. [[ID=

[0048] The semiconductor layer 205 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0049] The first electrode 201 is provided at a portion of the semiconductor layer 205 on the side (z1 side) where the first lead main surface 1111 of the first joint portion 111 of the first lead 11 faces in the thickness direction z. The first electrode 201 corresponds to the source electrode of the semiconductor element 20 in the present disclosure.

[0050] The second electrode 202 is provided in the semiconductor layer 205 on the side opposite to the first electrode 201 in the thickness direction z (the z2 side of the thickness direction z). The second electrode 202 faces the surface of the insulating substrate 50 (first metal layer 52) that faces the z1 side in the thickness direction z. The second electrode 202 corresponds to the drain electrode of the semiconductor element 20 in this disclosure. In this embodiment, the second electrode 202 is conductively bonded to the first metal layer 52 via a conductive bonding material 29. The second electrode 202 is also electrically connected to the first lead 11 (first joint portion 111) via the conductive bonding material 29, the first metal layer 52, and the conductive bonding material 19. The conductive bonding material 29 is, for example, solder. In addition, the conductive bonding material 29 may be silver paste, calcined silver, etc.

[0051] The third electrode 203 is provided in the semiconductor layer 205 on the same side as the first electrode 201 in the thickness direction z (the z1 side in the thickness direction z), and is located away from the first electrode 201. The third electrode 203 corresponds to the gate electrode of the semiconductor element 20 in this disclosure. In the thickness direction z, the area of ​​the third electrode 203 is smaller than the area of ​​the first electrode 201.

[0052] The connecting member 31 is joined to the first electrode 201 of the semiconductor element 20 and the second lead main surface 1211 of the pad portion 121 of the second lead 12. The connecting member 31 is made of, for example, a metal plate. The constituent material of the connecting member 31 includes, for example, Cu (copper). The connecting member 31 is a metal plate that has been appropriately bent. In the illustrated example, the connecting member 31 is a standard length Cu clip (metal clip). The connecting member 31 extends with the first direction x as its longitudinal direction.

[0053] The connecting member 31 has a joint portion 311 and a joint portion 312. The joint portion 311 is joined to the first electrode 201 (source electrode) via a conductive bonding material 39, and is the portion that conductively joins the connecting member 31 to the first electrode 201. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the joint portion 311 is located at the x1 side end of the connecting member 31 in the first direction x. The joint portion 312 is joined to the pad portion 121 of the second lead 12 via a conductive bonding material 39, and is the portion that conductively joins the connecting member 31 to the second lead 12. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the joint portion 312 is located at the x2 side end of the connecting member 31 in the first direction x.

[0054] The connecting member 32 connects the third electrode 203 of the semiconductor element 20 to the main surface 1311 of the pad portion 131 of the third lead 13. The material of the connecting member 32 is not limited and includes metals such as aluminum (Al), copper (Cu), and gold (Au). In the illustrated example, the connecting member 32 is made of gold (Au) and is a linear member.

[0055] The connecting member 33 is connected to the first electrode 201 of the semiconductor element 20 and the main surface 1411 of the pad portion 141 of the fourth lead 14. In the illustrated example, the connecting member 33 is a linear member containing gold (Au).

[0056] In this embodiment, the first terminal portion 112 of the first lead 11 is the drain terminal, the second terminal portion 122 of the second lead 12 is the source terminal, the third terminal portion 132 of the third lead 13 is the gate terminal, and the fourth terminal portion 142 of the fourth lead 14 is the source sense terminal.

[0057] As shown in Figures 1 to 15, the sealing resin 40 covers the semiconductor element 20, the connecting members 31, 32, 33 and the insulating substrate 50, as well as a portion each of the first lead 11, second lead 12, third lead 13, fourth lead 14 and the heat sink 60. The sealing resin 40 has electrical insulating properties. The sealing resin 40 is made of a material including, for example, black epoxy resin. The sealing resin 40 has a first resin surface 41, a second resin surface 42, a third resin surface 43, a fourth resin surface 44, a fifth resin surface 45, a sixth resin surface 46 and resin protrusions 48.

[0058] The first resin surface 41 faces the same side (z1 side) as the first lead main surface 1111 of the first joint portion 111 of the first lead 11 in the thickness direction z. The second resin surface 42 faces the opposite side (z2 side) from the first resin surface 41 in the thickness direction z. The back surface 602 of the heat sink 60 (main portion 61) is exposed from the second resin surface 42. The second resin surface 42 and the back surface 602 of the heat sink are flush with each other. The back surface 602 of the heat sink is separated from the third resin surface 43 and the fourth resin surface 44 in the first direction x.

[0059] The third resin surface 43 faces the x1 side in the first direction x. In the illustrated example, the third resin surface 43 includes a portion that is inclined with respect to the thickness direction z. The first part 1121 of the first terminal portion 112 of the first lead 11 extends from the third resin surface 43 to the x1 side in the first direction x when viewed in the thickness direction z. Also, the first part 1121 is separated from the second resin surface 42 in the thickness direction z.

[0060] The fourth resin surface 44 faces the opposite side of the third resin surface 43 in the first direction x (the x2 side of the first direction x). In the illustrated example, the fourth resin surface 44 includes a portion that is inclined with respect to the thickness direction z. In this embodiment, the second terminal portions 122 of the multiple second terminal portions 122 of the second lead 12, the seventh portion 1321 of the third terminal portion 132 of the third lead 13, and the tenth portion 1421 of the fourth terminal portion 142 of the fourth lead 14 penetrate the fourth resin surface 44.

[0061] The fifth resin surface 45 and the sixth resin surface 46 are surfaces facing opposite directions in the second direction y. The fifth resin surface 45 faces the y1 side in the second direction y. The sixth resin surface 46 faces the opposite side from the fifth resin surface 45 in the second direction y (the y2 side in the second direction y). In the illustrated example, each of the fifth resin surface 45 and the sixth resin surface 46 includes a portion that is inclined with respect to the thickness direction z. In this embodiment, the first extension portion 621 of the heat sink 60 extends from the fifth resin surface 45 to the y1 side in the second direction y when viewed in the thickness direction z. The second extension portion 622 of the heat sink 60 extends from the sixth resin surface 46 to the y2 side in the second direction y when viewed in the thickness direction z.

[0062] The resin projection 48 is a portion that protrudes from the third resin surface 43 towards the x1 side in the first direction x when viewed in the thickness direction z. The resin projection 48 is located in the center of the third resin surface 43 in the second direction y and on the z1 side in the thickness direction z. The resin projection 48 is in the shape of a rectangular parallelepiped (or approximately rectangular parallelepiped) block. The resin projection 48 has a shape that extends with the second direction y as its longitudinal direction, and its cross-section perpendicular to the second direction y is square.

[0063] The resin projection 48 covers at least a portion of the first part 1121 of the first terminal part 112 on the first lead 11. In the illustrated example, the resin projection 48 covers the entire first part 1121. In this embodiment, the connecting portion 1122a of each second part 1122 of the first terminal part 112 penetrates the surface of the resin projection 48 facing the second direction y.

[0064] In the illustrated example, the sealing resin 40 has a stepped portion 49. The stepped portion 49 is located between the resin projection 48 and the second resin surface 42 in the thickness direction z. In the illustrated example, the stepped portion 49 is recessed in the thickness direction z and the first direction x from both the third resin surface 43 and the second resin surface 42, and extends along the second direction y. The stepped portion 49 reaches the fifth resin surface 45 and the sixth resin surface 46.

[0065] Next, an example of the use of semiconductor device A10 will be described based on Figures 16 to 18.

[0066] Figures 16 and 17 show the semiconductor device A10 in use. In this example, a semiconductor device assembly B10 is shown, comprising the semiconductor device A10 and a heat sink 91 integrally attached to the z2 side in the thickness direction z of the semiconductor device A10. The heat sink 91 is positioned opposite the back surface 602 of the heat sink 60 of the semiconductor device A10. The material of the heat sink 91 includes, for example, aluminum. The material is not limited to aluminum, and may be other metal materials or resin materials (preferably those with good thermal conductivity). The heat sink 91 is an example of a "heat dissipation member" in this disclosure.

[0067] The heat sink 60 (first extension 621 and second extension 622) is fixed to the heat sink 91. As shown in Figure 17, the shafts of fasteners 93 (bolts in the illustrated example) are fitted into the first recess 621a of the first extension 621 and the second recess 622a of the second extension 622. The heat sink 60 (semiconductor device A10) is fixed to the heat sink 91 by these fasteners 93. As shown in Figures 16 and 17, with the semiconductor device A10 attached to the heat sink 91, the back surface 602 of the heat sink 60 and the surface of the heat sink 91 facing z1 in the thickness direction z are in surface contact. A sheet-like thermal interface material (TIM) may be placed between the back surface 602 of the heat sink and the heat sink 91.

[0068] Furthermore, in the usage examples shown in Figures 16 and 17, the semiconductor device A10 is surface-mounted on the circuit board 92. Specifically, the second part 1122 (mounting part 1122c) of the first terminal part 112, the fifth part 1222 of the second terminal part 122, the eighth part 1322 of the third terminal part 132, and the eleventh part 1422 of the fourth terminal part 142 are electrically bonded to the wiring pattern (not shown) of the circuit board 92, for example, by solder 921.

[0069] Figure 18 is a schematic diagram of a vehicle C1 on which a semiconductor device A10 is mounted. Vehicle C1 is, for example, an electric vehicle (EV). As shown in Figure 18, vehicle C1 is equipped with an AC-DC converter 81, a power receiving device 82, a storage battery 83, and a drive system 84. The semiconductor device A10 constitutes a part of the AC-DC converter 81. When vehicle C1 is supplied with AC power from a charging facility 80, which is an AC power source installed outdoors, etc., the AC-DC converter 81 converts it into high-voltage DC power. The AC-DC converter 81 supplies the high-voltage DC power to the storage battery 83. The power receiving device 82 supplies power to the storage battery 83 by a contactless charging system, and power is supplied by electromagnetic induction from a contactless charger (not shown) installed in a parking lot, etc. The power stored in the storage battery 83 is supplied to a drive system 84, which consists of an inverter, an AC motor, and a transmission. The drive system 84 drives vehicle C1. The AC-DC converter 81 described above is an example of a "power converter" as described in this disclosure.

[0070] Next, the operation of semiconductor device A10 will be explained.

[0071] The semiconductor device A10 comprises a semiconductor element 20, a first lead 11, an insulating substrate 50, and a sealing resin 40. The first lead 11 includes a first joint portion 111 and a first terminal portion 112, and is electrically connected to the semiconductor element 20. The first joint portion 111 has a first lead main surface 1111 facing the z1 side in the thickness direction z and a first lead back surface 1112 facing the z2 side in the thickness direction z. The first terminal portion 112 includes a first portion 1121 extending from the third resin surface 43 of the sealing resin 40 to the x1 side in the first direction x, and a second portion 1122 that is located on the z1 side in the thickness direction z relative to the first portion 1121 and is used for mounting. The insulating substrate 50 is located on the z2 side in the thickness direction z relative to the first joint portion 111 and is joined to the first lead back surface 1112 of the first joint portion 111. With this configuration, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A10 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which is positioned opposite to the z2 side in the thickness direction z of the semiconductor device A10.

[0072] The semiconductor device A10 includes a heat sink 60 located on the z2 side in the thickness direction z relative to the insulating substrate 50. The main surface 601 of the heat sink 60 is bonded to the insulating substrate 50. The back surface 602 of the heat sink 60 faces the z2 side in the thickness direction z and is exposed from the second resin surface 42 of the sealing resin 40. With this configuration, the heat generated in the semiconductor device A10 (semiconductor element 20) can be efficiently dissipated to the heat sink 91 which is positioned opposite the back surface 602 of the heat sink. This improves the heat dissipation performance of the semiconductor device A10.

[0073] The heat sink 60 has an extension 62 that extends outward from the sealing resin 40 when viewed in the thickness direction z. With this configuration, the heat generated in the semiconductor element 20 can be more efficiently dissipated to the heat sink 91 via the heat sink 60. This further improves the heat dissipation performance of the semiconductor device A10.

[0074] The extension portion 62 has a first extension portion 621 extending from the fifth resin surface 45 toward the y1 side of the second direction y, and a second extension portion 622 extending from the sixth resin surface 46 toward the y2 side of the second direction y. The first extension portion 621 has a first recess 621a that is recessed toward the y2 side of the second direction y when viewed in the thickness direction z, and the second extension portion 622 has a second recess 622a that is recessed toward the y1 side of the second direction y when viewed in the thickness direction z. With this configuration, the heat sink 60 can be attached to the heat sink 91 with good positional accuracy. This makes it possible to further improve the heat dissipation of the semiconductor device A10.

[0075] Figures 19 to 39 show modified and other embodiments of the semiconductor device of the present disclosure. In these figures, elements identical or similar to those in the above embodiments are denoted by the same reference numerals, and redundant explanations are omitted. Furthermore, the configurations of each part in each modified and embodiment can be appropriately combined with each other to the extent that no technical inconsistencies arise.

[0076] First Modification: Figures 19 and 20 show a first modification of semiconductor device A10. Figure 19 is a plan view showing semiconductor device A11 according to the first modification. Figure 20 is a cross-sectional view taken along the line XX-XX in Figure 19. In this modification, semiconductor device A11 differs from semiconductor device A10 in the configuration of the first extension portion 621 and the second extension portion 622 of the heat sink 60.

[0077] In the semiconductor device A11, the first extension 621 has a first through-hole 621b that penetrates in the thickness direction z. The first through-hole 621b is located in the center of the first extension 621 in the first direction x. The area around the first through-hole 621b of the first extension 621 bulges out more towards the y1 side in the second direction y than other parts. The second extension 622 has a second through-hole 622b that penetrates in the thickness direction z. The second through-hole 622b is located in the center of the second extension 622 in the first direction x. The area around the second through-hole 622b of the second extension 622 bulges out more towards the y2 side in the second direction y than other parts.

[0078] Figure 21 shows the semiconductor device A11 in use. In the example shown in the figure, a semiconductor device assembly B11 is shown, which comprises the semiconductor device A11 and a heat sink 91 integrally attached to the z2 side in the thickness direction z of the semiconductor device A11. The heat sink 60 (first extension 621 and second extension 622) is fixed to the heat sink 91. Fasteners 93 (bolts in the illustrated example) are inserted through the first through hole 621b of the first extension 621 and the second through hole 622b of the second extension 622. The heat sink 60 (semiconductor device A11) is fixed to the heat sink 91 by these fasteners 93. When the semiconductor device A11 is attached to the heat sink 91, the back surface 602 of the heat sink 60 and the surface of the heat sink 91 facing the z1 side in the thickness direction z are in surface contact. Furthermore, a sheet-like thermal conductive material (TIM) may be placed between the back surface 602 of the heat sink and the heat sink 91.

[0079] In this modified configuration, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A11 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which is positioned opposite on the z2 side in the thickness direction z of the semiconductor device A11. In addition, the semiconductor device A11 provides the same effects as the semiconductor device A10 of the above embodiment.

[0080] Second Modification: Figures 22 and 23 show a second modification of semiconductor device A10. Figure 22 is a plan view showing semiconductor device A12 according to the second modification. Figure 23 is a cross-sectional view along the line XXIII-XXIII in Figure 22. In this modification, semiconductor device A12 differs from semiconductor device A10 in the configuration of the extension portion 62 of the heat sink 60.

[0081] In the semiconductor device A12, the extension portion 62 has a third extension portion 623. The third extension portion 623 extends from the third resin surface 43 toward the x1 side in the first direction x when viewed in the thickness direction z. In this embodiment, the length of the third extension portion 623 in the second direction y is smaller than the length of the main portion 61 in the second direction y. The third extension portion 623 extends from the center of the main portion 61 in the second direction y toward the x1 side in the first direction x. In the semiconductor device A12, the third extension portion 623 has a third through hole 623b that penetrates in the thickness direction z. The third through hole 623b is located in the center of the third extension portion 623 in the second direction y.

[0082] Figure 24 shows the semiconductor device A12 in use. In the example shown in the figure, a semiconductor device assembly B12 is shown, comprising the semiconductor device A12 and a heat sink 91 integrally attached to the z2 side in the thickness direction z of the semiconductor device A12. The heat sink 60 (third extension 623) is fixed to the heat sink 91. A fastener 93 (a bolt in the illustrated example) is inserted through the third through hole 623b of the third extension 623. The heat sink 60 (semiconductor device A12) is fixed to the heat sink 91 by the fastener 93. When the semiconductor device A12 is attached to the heat sink 91, the back surface 602 of the heat sink 60 and the surface of the heat sink 91 facing the z1 side in the thickness direction z are in surface contact. A sheet-like thermal conductive material (TIM) may be placed between the back surface 602 of the heat sink and the heat sink 91.

[0083] In this modified example, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A12 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which is positioned opposite on the z2 side in the thickness direction z of the semiconductor device A12. In addition, the semiconductor device A12 provides the same effects and advantages as the semiconductor device A10 in the above embodiment.

[0084] Third Modification: Figure 25 shows a third modification of semiconductor device A10. Figure 25 is a plan view showing semiconductor device A13 according to the third modification. The configuration of the first extension portion 621 and the second extension portion 622 of the heat sink 60 is different from that of semiconductor device A11 shown in Figure 19.

[0085] In the semiconductor device A13, the first extension 621 has a plurality of (two in the illustrated example) first through holes 621b that penetrate in the thickness direction z. These plurality of first through holes 621b are spaced apart in the first direction x. The second extension 622 has a plurality of (two in the illustrated example) second through holes 622b that penetrate in the thickness direction z. These plurality of second through holes 622b are spaced apart in the first direction x. When using the semiconductor device A13, the heat sink 91 can be integrally attached to the z2 side in the thickness direction z, as described with reference to Figure 21. The semiconductor device A13 can be fixed to the heat sink 91 using fasteners 93 that are inserted through the plurality of first through holes 621b and the plurality of second through holes 622b, respectively, as shown in Figure 21.

[0086] Even with this modified configuration, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A13 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which may be positioned opposite on the z2 side in the thickness direction z of the semiconductor device A13. In addition, the semiconductor device A13 provides the same effects and advantages as the semiconductor device A10 in the above embodiment.

[0087] Fourth Modification: Figures 26 and 27 show a fourth modification of semiconductor device A10. Figure 26 is a plan view showing semiconductor device A14 according to the fourth modification. Figure 27 is a cross-sectional view along the line XXVII-XXVII in Figure 26. In this modification, semiconductor device A14 differs from semiconductor device A10 in the configuration of the first extension portion 621 and the second extension portion 622 of the heat sink 60.

[0088] In the semiconductor device A14, the heat sink 60 has a plurality (three) of first extensions 621. These plurality of first extensions 621 are spaced apart from each other in a first direction x. The heat sink 60 also has a plurality (three) of second extensions 622. These plurality of second extensions 622 are spaced apart from each other in a first direction x. Furthermore, in the semiconductor device A14, no recesses or through holes are formed in the first extensions 621 and the second extensions 622.

[0089] Figure 28 shows the semiconductor device A14 in use. In the example shown in the figure, a semiconductor device assembly B14 is shown, which includes the semiconductor device A14 and a heat sink 91 integrally attached to the z2 side in the thickness direction z of the semiconductor device A14. The heat sink 60 is fixed to the heat sink 91 by a sheet material 919 placed between the back surface 602 of the heat sink 602 and the heat sink 91. The sheet material 919 is made of, for example, an adhesive thermal conductive material (TIM). The heat sink 60 (semiconductor device A14) is fixed to the heat sink 91 by the sheet material 919.

[0090] Even with this modified example, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A14 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which is positioned opposite to the z2 side in the thickness direction z of the semiconductor device A14.

[0091] The heat sink 60 has an extension 62 that extends outward from the sealing resin 40 when viewed in the thickness direction z. With this configuration, the heat generated in the semiconductor element 20 can be more efficiently dissipated to the heat sink 91 via the heat sink 60. This improves the heat dissipation performance of the semiconductor device A14.

[0092] The extension portion 62 has a first extension portion 621 extending from the fifth resin surface 45 toward the y1 side of the second direction y, and a second extension portion 622 extending from the sixth resin surface 46 toward the y2 side of the second direction y. As shown in Figure 28, these first extension portion 621 and second extension portion 622 have portions that are exposed to the outside when the semiconductor device A14 is attached to the heat sink 91. With this configuration, the temperature of the semiconductor device A14 (semiconductor element 20) in use can be measured by attaching the thermocouple's temperature measuring junction to at least one of the first extension portion 621 and the second extension portion 622. In addition, the heat sink 60 of the semiconductor device A14 has a plurality of first extension portions 621 and a plurality of second extension portions 622. With this configuration, the accuracy of temperature measurement of the semiconductor device A14 (semiconductor element 20) can be improved by attaching thermocouple temperature measuring junctions to multiple first extensions 621 and multiple second extensions 622.

[0093] Fifth Modification: Figure 29 shows a fifth modification of semiconductor device A10. Figure 29 is a plan view showing semiconductor device A15 according to the fifth modification. In this modification, the configuration of the first extension portion 621 and the second extension portion 622 of the heat sink 60 of semiconductor device A15 differs from that of semiconductor device A14 shown in Figure 26.

[0094] In the semiconductor device A15, the heat sink 60 has one first extension 621 and one second extension 622. The first extension 621 extends from the center of the main portion 61 in a first direction x toward the y1 side in a second direction y. The second extension 622 extends from the center of the main portion 61 in a first direction x toward the y2 side in a second direction y. Furthermore, in the semiconductor device A15, the first extension 621 and the second extension 622 do not have recesses or through holes formed therein.

[0095] Even with this modified example, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A15 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which may be positioned opposite the z2 side in the thickness direction z of the semiconductor device A15.

[0096] The heat sink 60 has an extension 62 that extends outward from the sealing resin 40 when viewed in the thickness direction z. With this configuration, the heat generated in the semiconductor element 20 can be more efficiently dissipated to the heat sink 91 via the heat sink 60. This improves the heat dissipation performance of the semiconductor device A15. Furthermore, even when the semiconductor device A15 is in use, the temperature of the semiconductor device A15 (semiconductor element 20) in use can be measured by attaching the thermocouple's temperature measuring junction to at least one of the first extension 621 and the second extension 622, as described with reference to Figure 28.

[0097] Sixth Modification: Figure 30 shows a sixth modification of semiconductor device A10. Figure 30 is a plan view showing semiconductor device A16 according to the sixth modification. In this modification, the configuration of the first extension portion 621 and the second extension portion 622 of the heat sink 60 of semiconductor device A16 differs from that of semiconductor device A14 shown in Figure 26.

[0098] In the semiconductor device A16, the heat sink 60 has two first extensions 621 and two second extensions 622. The two first extensions 621 extend from both ends of the main portion 61 in a first direction x toward the y1 side in a second direction y. The two second extensions 622 extend from both ends of the main portion 61 in a first direction x toward the y2 side in a second direction y. Furthermore, in the semiconductor device A16, no recesses or through holes are formed in the first extensions 621 and the second extensions 622.

[0099] Even with this modified example, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A16 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which may be positioned opposite to the z2 side in the thickness direction z of the semiconductor device A16.

[0100] The heat sink 60 has an extension portion 62 that extends outward from the sealing resin 40 when viewed in the thickness direction z. With this configuration, the heat generated in the semiconductor element 20 can be more efficiently dissipated to the heat sink 91 via the heat sink 60. This improves the heat dissipation performance of the semiconductor device A16. Furthermore, even when the semiconductor device A16 is in use, the temperature of the semiconductor device A16 (semiconductor element 20) in use can be measured by attaching the thermocouple's temperature measuring junction to at least one of the first extension portion 621 and the second extension portion 622, as described with reference to Figure 28.

[0101] Seventh Modification: Figure 31 shows a seventh modification of semiconductor device A10. Figure 31 is a plan view showing semiconductor device A17 according to the seventh modification. In this modification, the configuration of the first extension portion 621 and the second extension portion 622 of the heat sink 60 of semiconductor device A17 differs from that of semiconductor device A14 shown in Figure 26.

[0102] In the semiconductor device A17, the heat sink 60 has one first extension 621 and one second extension 622. The first extension 621 extends from the x2 side of the first direction x of the main portion 61 to the y1 side of the second direction y. The second extension 622 extends from the x2 side of the first direction x of the main portion 61 to the y2 side of the second direction y. Furthermore, in the semiconductor device A17, no recesses or through holes are formed in the first extension 621 and the second extension 622.

[0103] Even with this modified example, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A17 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which may be positioned opposite to the z2 side in the thickness direction z of the semiconductor device A17.

[0104] The heat sink 60 has an extension 62 that extends outward from the sealing resin 40 when viewed in the thickness direction z. With this configuration, the heat generated in the semiconductor element 20 can be more efficiently dissipated to the heat sink 91 via the heat sink 60. This improves the heat dissipation performance of the semiconductor device A17. Furthermore, even when the semiconductor device A17 is in use, the temperature of the semiconductor device A17 (semiconductor element 20) can be measured in its operating state by attaching the thermocouple's temperature measuring junction to at least one of the first extension 621 and the second extension 622, as described with reference to Figure 28.

[0105] As shown in the semiconductor devices A14, A15, A16, and A17 described above, the arrangement of the first extension 621 and the second extension 622 for temperature measurement can be appropriately selected from a variety of options.

[0106] Second Embodiment: Figures 32 and 33 show a semiconductor device according to the second embodiment of the present disclosure. Figure 32 is a bottom view of the main part of the semiconductor device A20 according to this embodiment. In Figure 32, the outer shape of the sealing resin 40 is shown by dashed lines. Figure 33 is a cross-sectional view along the line XXXIII-XXXIII in Figure 32. The semiconductor device A20 of this embodiment differs from the semiconductor device A10 in the configuration of the insulating substrate 50, the configuration of the first lead 11, and the arrangement of the semiconductor elements 20.

[0107] In semiconductor device A20, the insulating substrate 50 consists of a single insulating substrate, such as a ceramic substrate. The first joint portion 111 of the first lead 11 has a size in the thickness direction z that is larger than the first joint portion 111 of semiconductor device A10. The surface of the insulating substrate 50 facing z2 in the thickness direction z is joined to the main surface 601 of the heat sink 60 via a bonding material 59. The surface of the insulating substrate 50 facing z1 in the thickness direction z is joined to the back surface 1112 of the first lead of the first joint portion 111 via a bonding material 18. The bonding materials 59 and 18 may be conductive or insulating, but solder is used as an example.

[0108] In semiconductor device A20, the semiconductor element 20 is mounted on the first lead main surface 1111 of the first junction 111. The second electrode 202 of the semiconductor element 20 is conductively bonded to the first lead main surface 1111 via a conductive bonding material 29.

[0109] In this embodiment as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A20 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which may be positioned opposite on the z2 side in the thickness direction z of the semiconductor device A20. In addition, the semiconductor device A20 provides the same effects as the semiconductor device A10 in the above embodiment.

[0110] Third Embodiment: Figures 34 and 35 show a semiconductor device according to a third embodiment of the present disclosure. Figure 34 is a bottom view of the main part of the semiconductor device A30 according to this embodiment. In Figure 34, the outer shape of the sealing resin 40 is shown by dashed lines. Figure 35 is a cross-sectional view along the line XXXV-XXXV in Figure 34. The semiconductor device A30 of this embodiment does not include the connecting members 31, 32, and 33 described above.

[0111] In semiconductor device A30, the back surface 1212 of the pad portion 121 of the second lead 12 is conductively bonded to the first electrode 201 of the semiconductor element 20. Also, the back surface 1312 of the pad portion 131 of the third lead 13 is conductively bonded to the third electrode 203 of the semiconductor element 20. Furthermore, the back surface 1412 of the pad portion 141 of the fourth lead 14 is conductively bonded to the first electrode 201 of the semiconductor element 20.

[0112] In this embodiment as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A30 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which is positioned opposite on the z2 side in the thickness direction z of the semiconductor device A30. In addition, the semiconductor device A30 provides the same effects as the semiconductor device A10 in the above embodiment.

[0113] Fourth Embodiment: Figures 36 to 38 show a semiconductor device according to the fourth embodiment of the present disclosure. Figure 36 is a plan view showing A40 according to this embodiment. Figure 37 is a bottom view of the main part of the semiconductor device A40. In Figure 37, the outer shape of the sealing resin 40 is shown by dashed lines. Figure 38 is a cross-sectional view along the line XXXVIII-XXXVIII in Figure 37. The semiconductor device A40 of this embodiment does not have the heat sink 60 described above. Also, the configuration of the insulating substrate 50 of the semiconductor device A40 differs from that of the semiconductor device A10.

[0114] In semiconductor device A40, the insulating substrate 50 consists of a single insulating substrate, such as a ceramic substrate. The insulating substrate 50 has an insulating substrate main surface 501 and an insulating substrate back surface 502. The insulating substrate main surface 501 is the surface facing z1 in the thickness direction z. The insulating substrate back surface 502 is the surface facing z2 in the thickness direction z. A wiring layer 17 is formed on the insulating substrate main surface 501. The first lead back surface 1112 of the first joint 111 and the second electrode 202 of the semiconductor element 20 are conductively bonded to the wiring layer 17 via a conductive bonding material (not shown). As a result, the second electrode 202 and the first joint 111 (first lead 11) are electrically connected via the wiring layer 17. The insulating substrate back surface 502 is exposed from the second resin surface 42. The insulating substrate back surface 502 is rectangular when viewed in the thickness direction z. Viewed in the thickness direction z, the periphery of the back surface 502 of the insulating substrate is surrounded by the second resin surface 42. The second resin surface 42 and the back surface 502 of the insulating substrate are flush with each other.

[0115] Figure 39 shows the semiconductor device A40 in use. In the example shown in the figure, a semiconductor device assembly B40 is shown, which includes the semiconductor device A40 and a heat sink 91 integrally attached to the z2 side in the thickness direction z of the semiconductor device A40. The insulating substrate 50 is fixed to the heat sink 91 by a sheet material 919 placed between the back surface 502 of the insulating substrate and the heat sink 91. The sheet material 919 is made of, for example, an adhesive thermal conductive material (TIM). The insulating substrate 50 (semiconductor device A40) is fixed to the heat sink 91 by the sheet material 919.

[0116] In this embodiment as well, insulation is ensured between the heat dissipation surface (the back surface 502 of the insulating substrate 50) facing the z2 side in the thickness direction z of the semiconductor device A40 and the semiconductor element 20, thereby preventing discharge to the heat sink 91 which is positioned opposite to the z2 side in the thickness direction z of the semiconductor device A40.

[0117] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways. The semiconductor device relating to this disclosure is not limited to the package structure shown in semiconductor device A10, etc., of the above embodiments, and can be applied to various package structures.

[0118] This disclosure includes a configuration relating to the following appendices. Appendix 1. A semiconductor device comprising: a semiconductor element; a first lead that is electrically connected to the semiconductor element, including a first lead main surface facing one side in the thickness direction and a first lead back surface facing the other side in the thickness direction; a first terminal portion; an insulating substrate; a sealing resin that covers the semiconductor element, the first joint portion, and at least a part of the insulating substrate, having a first resin surface facing one side in the thickness direction, a second resin surface facing the other side in the thickness direction, and a third resin surface facing one side in a first direction perpendicular to the thickness direction; the first terminal portion includes a first portion extending from the third resin surface to one side in the first direction when viewed in the thickness direction, and a second portion that is located on one side in the thickness direction relative to the first portion and is used for mounting; and the insulating substrate is located on the other side in the thickness direction relative to the first joint portion and is bonded to the back surface of the first lead. Appendix 2. The semiconductor device according to Appendix 1, further comprising a heat sink located on the other side in the thickness direction with respect to the insulating substrate, wherein the heat sink has a main surface facing one side in the thickness direction and bonded to the insulating substrate, and a back surface facing the other side in the thickness direction and exposed from the second resin surface. Appendix 3. The semiconductor device according to Appendix 2, wherein the back surface of the heat sink is flush with the second resin surface. Appendix 4. The semiconductor device according to any one of Appendix 1 to 3, wherein the semiconductor element is mounted on one side in the thickness direction of the insulating substrate, and the semiconductor element and the first junction are separated when viewed in the thickness direction. Appendix 5. The semiconductor device according to any one of Appendix 1 to 3, wherein the semiconductor element is mounted on the first lead main surface of the first junction.Note 6. The semiconductor device according to Note 2 or 3, wherein the sealing resin has a fourth resin surface facing the other side of the first direction, a fifth resin surface facing one side of the second direction perpendicular to the thickness direction and the first direction, and a sixth resin surface facing the other side of the second direction, the heat sink includes a main portion and an extension portion connected to the main portion, the main portion is located inside the sealing resin when viewed in the thickness direction, and the extension portion extends outside the sealing resin from at least one of the third resin surface, the fourth resin surface, the fifth resin surface and the sixth resin surface when viewed in the thickness direction. Note 7. The semiconductor device according to Note 6, wherein the extension portion has a first extension portion extending from the fifth resin surface to one side of the second direction and a second extension portion extending from the sixth resin surface to the other side of the second direction. Note 8. The semiconductor device according to Appendix 7, wherein the first extension portion has a first recess that is recessed to the other side in the second direction when viewed in the thickness direction, and the second extension portion has a second recess that is recessed to one side in the second direction when viewed in the thickness direction. Appendix 9. The semiconductor device according to Appendix 7, wherein the first extension portion has a first through hole that penetrates in the thickness direction, and the second extension portion has a second through hole that penetrates in the thickness direction. Appendix 10. The semiconductor device according to Appendix 6, wherein the extension portion has a third extension portion that extends from the third resin surface to one side in the first direction. Appendix 11. The semiconductor device according to Appendix 10, wherein the third extension portion has a third through hole that penetrates in the thickness direction, and the third through hole is located on one side in the first direction relative to the first terminal portion. Appendix 12. The semiconductor device according to any one of Appendix 1 to 11, wherein the sealing resin has a resin projection that protrudes from the third resin surface to one side in the first direction, and the resin projection covers at least a part of the first part. Appendix 13. The semiconductor device according to any one of Appendix 1 to 12, wherein the insulating substrate includes an insulating layer, a first metal layer laminated on one side of the insulating layer in the thickness direction, and a second metal layer laminated on the other side of the insulating layer in the thickness direction. Appendix 14. The semiconductor device according to Appendix 7, wherein the extension has a plurality of first extensions spaced apart from each other in the first direction, and a plurality of second extensions spaced apart from each other in the first direction.Note 15. The semiconductor device according to any one of Notes 1 to 14, wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and a gate electrode, the drain electrode is conductive to the first junction, and further comprises a second lead which is conductive to the source electrode and includes a portion extending from the sealing resin to the other side in the first direction, and a third lead which is conductive to the gate electrode and includes a portion extending from the sealing resin to the other side in the first direction. Note 16. A semiconductor device assembly comprising the semiconductor device according to any one of Notes 1 to 15 and a heat dissipation member integrally attached to the other side in the thickness direction of the semiconductor device. Note 17. A vehicle comprising a power conversion device configured to include the semiconductor device according to Note 15.

[0119] A10-A17, A20, A30, A40: Semiconductor device, B10, B11, B12, B14, B40: Semiconductor device assembly, C1: Vehicle, 10: Conductive member, 11: First lead, 111: First joint, 1111: Main surface of first lead, 1112: Back surface of first lead, 112: First terminal, 1121: First part, 1122: Second part, 1122a: Connecting part, 1122b: Bent part, 1122c: Mounting part, 12: Second lead, 121: Pad part, 122: Second terminal, 1211: Main surface of second lead, 1212: Back surface of second lead, 122 1: Part 4, 1222: Part 5, 1223: Part 6, 13: Third lead, 131: Pad part, 132: Third terminal part, 1311: Main surface of third lead, 1312: Back surface of third lead, 1321: Part 7, 1322: Part 8, 1323: Part 9, 14: Fourth lead, 141: Pad part, 142: Fourth terminal part, 1411: Main surface of fourth lead, 1412: Back surface of fourth lead, 1421: Part 10, 1422: Part 11, 1423: Part 12, 17: Wiring layer, 18: Bonding material, 19: Conductive bonding material, 20: Semiconductor element, 201: First electrode (So 41: 1st resin surface, 42: 2nd resin surface, 43: 3rd resin surface, 44: 4th resin surface, 45: 5th resin surface, 46: 6th resin surface, 48: resin protrusion, 49: stepped portion, 50: insulating substrate, 501: main surface of insulating substrate, 502: back surface of insulating substrate, 51: insulating layer, 52: 1st metal layer, 53: 2nd 59: Metal layer, 60: Bonding material, 60: Heat sink, 601: Main surface of heat sink, 602: Back surface of heat sink, 61: Main part, 62: Extension part, 621: First extension part, 621a: First recess, 621b: First through hole, 622: Second extension part, 622a: Second recess, 622b: Second through hole, 623: Third extension part, 623b: Third through hole, 80: Charging facility, 81: AC-DC converter (power converter), 82: Power receiving device, 83: Storage battery, 84: Drive system, 91: Heat sink (heat dissipation member), 92: Circuit board, 919: Sheet material, 921: Solder, 93: Fastener

Claims

1. A semiconductor device comprising: a semiconductor element; a first junction having a first lead main surface facing one side in the thickness direction and a first lead back surface facing the other side in the thickness direction; a first terminal portion; a first lead that is electrically connected to the semiconductor element; an insulating substrate; a sealing resin having a first resin surface facing one side in the thickness direction, a second resin surface facing the other side in the thickness direction, and a third resin surface facing one side in a first direction perpendicular to the thickness direction, covering the semiconductor element, the first junction, and at least a part of the insulating substrate; wherein the first terminal portion includes a first portion extending from the third resin surface to one side in the first direction when viewed in the thickness direction, and a second portion including a portion located on one side in the thickness direction relative to the first portion and used for mounting; and the insulating substrate is located on the other side in the thickness direction relative to the first junction and is bonded to the back surface of the first lead.

2. The semiconductor device according to claim 1, further comprising a heat sink located on the other side in the thickness direction with respect to the insulating substrate, wherein the heat sink has a main surface facing one side in the thickness direction and bonded to the insulating substrate, and a back surface facing the other side in the thickness direction and exposed from the second resin surface.

3. The semiconductor device according to claim 2, wherein the back surface of the heat sink is flush with the second resin surface.

4. The semiconductor device according to any one of claims 1 to 3, wherein the semiconductor element is mounted on one side of the insulating substrate in the thickness direction, and the semiconductor element and the first junction are separated when viewed in the thickness direction.

5. The semiconductor device according to any one of claims 1 to 3, wherein the semiconductor element is mounted on the first lead main surface of the first junction.

6. The semiconductor device according to claim 2 or 3, wherein the sealing resin has a fourth resin surface facing the other side of the first direction, a fifth resin surface facing one side of the second direction perpendicular to the thickness direction and the first direction, and a sixth resin surface facing the other side of the second direction, the heat sink includes a main portion and an extension portion connected to the main portion, the main portion is located inside the sealing resin when viewed in the thickness direction, and the extension portion extends outside the sealing resin from at least one of the third resin surface, the fourth resin surface, the fifth resin surface and the sixth resin surface when viewed in the thickness direction.

7. The semiconductor device according to claim 6, wherein the extension portion comprises a first extension portion extending from the fifth resin surface to one side in the second direction and a second extension portion extending from the sixth resin surface to the other side in the second direction.

8. The semiconductor device according to claim 7, wherein the first extension portion has a first recess that is recessed on the other side of the second direction when viewed in the thickness direction, and the second extension portion has a second recess that is recessed on one side of the second direction when viewed in the thickness direction.

9. The semiconductor device according to claim 7, wherein the first extension portion has a first through hole penetrating in the thickness direction, and the second extension portion has a second through hole penetrating in the thickness direction.

10. The semiconductor device according to claim 6, wherein the extension portion has a third extension portion that extends from the third resin surface to one side in the first direction.

11. The semiconductor device according to claim 10, wherein the third extension portion has a third through-hole that penetrates in the thickness direction, and the third through-hole is located on one side in the first direction relative to the first terminal portion.

12. The semiconductor device according to any one of claims 1 to 11, wherein the sealing resin has a resin projection that protrudes from the third resin surface to one side in the first direction, and the resin projection covers at least a portion of the first part.

13. The semiconductor device according to any one of claims 1 to 12, wherein the insulating substrate includes an insulating layer, a first metal layer laminated on one side of the insulating layer in the thickness direction, and a second metal layer laminated on the other side of the insulating layer in the thickness direction.

14. The semiconductor device according to claim 7, wherein the extension portion comprises a plurality of first extension portions separated from each other in the first direction and a plurality of second extension portions separated from each other in the first direction.

15. The semiconductor device according to any one of claims 1 to 14, wherein the semiconductor element is a switching element having a drain electrode, a source electrode and a gate electrode, the drain electrode is conductive to the first junction and further comprises a second lead which is conductive to the source electrode and includes a portion extending from the sealing resin to the other side in the first direction, and a third lead which is conductive to the gate electrode and includes a portion extending from the sealing resin to the other side in the first direction.

16. A semiconductor device assembly comprising a semiconductor device according to any one of claims 1 to 15, and a heat dissipation member integrally attached to the other side of the semiconductor device in the thickness direction.

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