Semiconductor device and semiconductor module

Abstract

This semiconductor device comprises a semiconductor element, a first pad, a second pad, first rewiring, and a sealing resin. A first electrode of the semiconductor element includes a terminal part having a bonding surface facing one side in a first direction. The first rewiring is electrically connected to the bonding surface. A second electrode of the semiconductor element and the second pad are exposed from the sealing resin. The sealing resin has a first surface and a second surface facing opposite sides in the first direction. The terminal part is exposed from the first surface. The first pad is exposed from the second surface.

Description

Semiconductor Device and Semiconductor Module

[0001] The present disclosure relates to a semiconductor device and a semiconductor module on which the semiconductor device is mounted.

[0002] Conventionally, semiconductor devices on which semiconductor elements having a switching function are mounted are widely known. Such semiconductor devices are mainly used for power conversion. Patent Document 1 discloses an example of such a semiconductor device.

[0003] The semiconductor device disclosed in Patent Document 1 includes a first semiconductor element, a heat transfer layer, rewiring, and a sealing resin. The heat transfer layer is electrically joined to the first electrode of the first semiconductor element. The heat transfer layer functions as an electrode of the first semiconductor element. The rewiring is electrically joined to the first gate electrode of the first semiconductor element. Each of the heat transfer layer and the rewiring is exposed from the sealing resin. This configuration is suitable for flowing a larger current through the first electrode.

[0004] Here, regarding the semiconductor device disclosed in Patent Document 1, in some cases, it is required to detect the magnitude of the current flowing through the first electrode in order to control the voltage applied to the first gate electrode. As a measure for this case, as disclosed in Patent Document 1, an example is cited in which an additional rewiring electrically connected to the end face of the heat transfer layer is provided in the semiconductor device. However, with this measure, there is a tendency for the extension of the additional rewiring to become longer and for the area of the additional rewiring exposed from the sealing resin to become larger. This leads to an increase in the size of the semiconductor device and requires insulation measures for the additional rewiring exposed from the sealing resin.

[0005] International Publication No. 2023 / 112662

[0006] [Summary] One problem of the present disclosure is to provide a semiconductor device improved from the prior art. In particular, in view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device capable of detecting the magnitude of the current flowing through the first electrode while suppressing an increase in size and complexity of the device.

[0007] A semiconductor device provided by a first aspect of this disclosure comprises a semiconductor element having a first electrode, a second electrode, and a control electrode; a first pad conductive to the first electrode; a second pad conductive to the control electrode; a first rewiring conductive to the first electrode and the first pad; and a sealing resin covering a portion of the semiconductor element. The first electrode includes a base and a terminal portion electrically connected to the base. The terminal portion faces one side in a first direction and has a bonding surface electrically connected to the base. The first rewiring is electrically connected to the bonding surface. The second electrode and the second pad are exposed from the sealing resin. The sealing resin has a first surface and a second surface facing opposite directions in the first direction. The terminal portion is exposed from the first surface. The first pad is exposed from the second surface.

[0008] A semiconductor module provided by a second aspect of this disclosure comprises a semiconductor device provided by a first aspect of this disclosure and a substrate including a conductive portion. The semiconductor device is mounted on the substrate. Either the terminal portion or the second electrode is conductively bonded to the conductive portion.

[0009] Other features and advantages of this disclosure will become more apparent from the detailed description below, based on the accompanying drawings.

[0010] Figure 1 is a plan view of a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a plan view corresponding to Figure 1, showing the sealing resin, intermediate layer, and coating layer. Figure 3 is a plan view corresponding to Figure 2, further showing the terminal portion of the first electrode of the semiconductor element and the bonding layer of the semiconductor element. Figure 4 is a bottom view of the semiconductor device shown in Figure 1. Figure 5 is a cross-sectional view along the line V-V in Figure 2. Figure 6 is a cross-sectional view along the line VI-VI in Figure 2. Figure 7 is a cross-sectional view along the line VII-VII in Figure 2. Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 2. Figure 9 is a cross-sectional view along the line IX-IX in Figure 2. Figure 10 is a partially enlarged view of Figure 5. Figure 11 is a cross-sectional view of a semiconductor module according to the first embodiment of the present disclosure. Figure 12 is a cross-sectional view of a semiconductor module according to the second embodiment of the present disclosure. Figure 13 is a plan view of a semiconductor device according to the second embodiment of the present disclosure, showing the sealing resin, intermediate layer, and coating layer. Figure 14 is a bottom view of the semiconductor device shown in Figure 13. Figure 15 is a left side view of the semiconductor device shown in Figure 13. Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 13. Figure 17 is a cross-sectional view along the line XVII-XVII in Figure 13. Figure 18 is a plan view of a semiconductor device according to the third embodiment of the present disclosure, showing the sealing resin, intermediate layer and coating layer. Figure 19 is a bottom view of the semiconductor device shown in Figure 18. Figure 20 is a left side view of the semiconductor device shown in Figure 18. Figure 21 is a cross-sectional view along the line XXI-XXI in Figure 18. Figure 22 is a cross-sectional view along the line XXII-XXII in Figure 18. Figure 23 is a plan view of a semiconductor device according to the fourth embodiment of the present disclosure, showing the sealing resin, intermediate layer and coating layer. Figure 24 is a bottom view of the semiconductor device shown in Figure 23. Figure 25 is a left side view of the semiconductor device shown in Figure 23.

[0011] [Detailed Explanation] Details of this disclosure will be explained with reference to the attached drawings.

[0012] First Embodiment: A semiconductor device A10 according to the first embodiment of the present disclosure will be described based on Figures 1 to 10. The semiconductor device A10 comprises a semiconductor element 10, a first pad 23, a first redistribution 24, a second pad 25, a second redistribution 26, a sealing resin 40, an intermediate layer 50, a protective layer 61, and a coating layer 62. Here, for the sake of understanding, Figure 2 is shown through the sealing resin 40, the intermediate layer 50, the protective layer 61, and the coating layer 62. In Figure 2, the sealing resin 40 that has been seen through is shown by dashed lines. For the sake of understanding, Figure 3 is shown through Figure 2, further showing the terminal portion 112 of the first electrode 11 of the semiconductor element 10 (details will be described later) and the junction layer 19 of the semiconductor element 10 (details will be described later). In Figure 3, the sealing resin 40 and the terminal portion 112 that have been seen through are shown by dashed lines.

[0013] In describing the semiconductor device A10, for convenience, the direction normal to the first surface 40A of the sealing resin 40 (details will be described later) will be referred to as the "first direction z". The direction perpendicular to the first direction z will be referred to as the "second direction x". The direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y". The semiconductor device A10 is rectangular in shape when viewed in the first direction z.

[0014] The semiconductor device A10 can be manufactured, for example, by the Laser Direct Structuring (LDS) method disclosed in U.S. Patent Application Publication No. 2010 / 0019370.

[0015] As shown in Figures 5 to 9, the sealing resin 40 covers a portion of each of the semiconductor element 10 and the second rewiring 26. The sealing resin 40 is an insulator. The sealing resin 40 contains an additive material containing a metal element.

[0016] As shown in Figures 1, 4, 5, and 6, the sealing resin 40 has a first surface 40A, a second surface 40B, and two third surfaces 40C. In the first direction z, the first surface 40A and the second surface 40B face opposite each other. The two third surfaces 40C face opposite each other in the second direction x.

[0017] The semiconductor element 10 is a switching element. The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, the semiconductor element 10 may be a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor). In the description of the semiconductor device A10, the semiconductor element 10 refers to a MOSFET with a vertical structure.

[0018] As shown in Figures 3, 5, and 8, the semiconductor element 10 has a first electrode 11, a second electrode 12, a control electrode 13, a main body 14, a protective film 15, and a bonding layer 19.

[0019] The main body 14 forms the functional center of the semiconductor element 10. The main body 14 includes a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). As shown in Figures 5 to 8, the main body 14 is located between the first electrode 11 and the second electrode 12 in the first direction z.

[0020] As shown in Figures 5 to 8, the first electrode 11 is positioned on the side where the first surface 40A of the sealing resin 40 faces in a first direction z with respect to the main body 14. The first electrode 11 is electrically connected to the main body 14. A source current flows through the first electrode 11 as the semiconductor element 10 is driven. Therefore, the first electrode 11 corresponds to the source of the semiconductor element 10.

[0021] As shown in Figures 2 and 5 to 8, the first electrode 11 has a pad portion 111 and a terminal portion 112. The pad portion 111 is in contact with the main body 14 and is electrically conductive to the main body 14. The terminal portion 112 is located on the opposite side of the main body 14 from the pad portion 111 in a first direction z. The dimension of the terminal portion 112 in the first direction z is larger than the dimension of the pad portion 111 in the first direction z. In the first direction z, the terminal portion 112 includes a portion that protrudes outward from the main body 14. A part of this portion is located on the opposite side of the first rewiring 24 in a second direction x, with respect to the main body 14. The terminal portion 112 contains copper (Cu).

[0022] As shown in Figures 2, 5, and 8, the terminal portion 112 has a first exposed surface 112A, an opening 112B, and a bonding surface 112C. The first exposed surface 112A faces the same side as the first surface 40A of the sealing resin 40 in the first direction z. The first exposed surface 112A is exposed from the first surface 40A and is flush with the first surface 40A. The opening 112B penetrates in the first direction z and opens from one side in the second direction x. Viewed in the first direction z, the opening 112B is away from the pad portion 111. The bonding surface 112C faces one side in the first direction z. The second surface 40B of the sealing resin 40 faces the same side as the bonding surface 112C in the first direction z. In the terminal portion 112, the first exposed surface 112A and the bonding surface 112C face opposite each other. The bonding surface 112C faces the pad portion 111. The bonding surface 112C is electrically connected to the pad portion 111 via the bonding layer 19. The bonding layer 19 is, for example, solder. Alternatively, the bonding layer 19 may be a sintered body of metal particles. In this case, the metal particles include, for example, silver (Ag). Furthermore, the bonding layer 19 may be a metal layer formed by solid-phase diffusion.

[0023] As shown in Figures 5 to 8, the second electrode 12 is located on the opposite side from the first electrode 11 with respect to the main body 14. Therefore, the second electrode 12 is located on the opposite side from the pad portion 111 of the first electrode 11 in the first direction z. The second electrode 12 is electrically connected to the main body 14. A drain current flows through the second electrode 12 as the semiconductor element 10 is driven. Therefore, the second electrode 12 corresponds to the drain of the semiconductor element 10. The second electrode 12 is exposed from the second surface 40B of the sealing resin 40.

[0024] As shown in Figures 5 and 8, the control electrode 13 is located on the same side as the first electrode 11 with respect to the main body 14. Therefore, in the first direction z, the control electrode 13 is located on the same side as the pad portion 111 of the first electrode 11. A gate voltage for driving the semiconductor element 10 is applied to the control electrode 13. Therefore, the control electrode 13 corresponds to the gate of the semiconductor element 10. As shown in Figure 2, in the first direction z, the control electrode 13 overlaps the opening 112B of the terminal portion 112 of the first electrode 11.

[0025] As shown in Figures 5 to 8, the protective film 15 is located on the opposite side of the second electrode 12 with respect to the main body 14. The protective film 15 covers a portion of each of the first electrode 11, the control electrode 13, and the main body 14. The protective film 15 is an insulator. The protective film 15 contains, for example, polyimide or polybenzoxazole. As shown in Figures 3, 5, and 8, the protective film 15 has a first opening 151 and a second opening 152, each penetrating in a first direction z. The first opening 151 and the second opening 152 are separated from each other in a direction perpendicular to the first direction z. The pad portion 111 of the first electrode 11 is exposed through the first opening 151. The control electrode 13 is exposed through the second opening 152.

[0026] As shown in Figure 10, the pad portion 111 of the first electrode 11 has a first portion 111A and a second portion 111B. The first portion 111A is in contact with the main body 14. The first portion 111A contains, for example, aluminum (Al). The protective film 15 covers a portion of the first portion 111A. The second portion 111B is located between the first portion 111A and the terminal portion 112 in a first direction z. The second portion 111B is electrically connected to the first portion 111A. The bonding surface 112C of the terminal portion 112 of the first electrode 11 is electrically connected to the second portion 111B via a bonding layer 19. The second portion 111B contains copper. Therefore, the terminal portion 112 and the second portion 111B contain the same metallic element as each other. The second portion 111B is formed by electroless plating.

[0027] As shown in Figure 10, with respect to the pad portion 111 of the first electrode 11, the dimension t2 of the second portion 111B in the first direction z is greater than the dimension t1 of the first portion 111A in the first direction z. The second portion 111B is in contact with the protective film 15. A portion of the second portion 111B protrudes beyond the protective film 15 in the first direction z. The remaining portion of the second portion 111B is housed in the first opening 151 of the protective film 15. As shown in Figure 3, viewed in the first direction z, the second portion 111B is located inward from the periphery of the first portion 111A.

[0028] As shown in Figure 10, the control electrode 13 has a third portion 131 and a fourth portion 132. The third portion 131 is in contact with the main body 14. The third portion 131 contains, for example, aluminum. The protective film 15 covers a portion of the third portion 131. The fourth portion 132 is located on the opposite side of the main body 14 with respect to the third portion 131 in the first direction z. The fourth portion 132 is electrically connected to the third portion 131. The fourth portion 132 contains copper. Therefore, the fourth portion 132 and the second portion 111B of the pad portion 111 contain the same elements as each other. The fourth portion 132 is formed by electroless plating.

[0029] As shown in Figure 10, the fourth portion 132 is in contact with the protective film 15. A portion of the fourth portion 132 protrudes beyond the protective film 15 in the first direction z. The remaining portion of the fourth portion 132 is housed in the second opening 152 of the protective film 15. As shown in Figure 3, in the first direction z, the fourth portion 132 is located inward from the periphery of the third portion 131.

[0030] As shown in Figures 2 and 6, the first pad 23 is conductive to the first electrode 11 of the semiconductor element 10 via the first rewiring 24. Therefore, the potential of the voltage applied to the first pad 23 is equal to the potential of the voltage applied to the first electrode 11. This allows the magnitude of the current flowing through the first electrode 11 to be detected by determining the voltage applied to the first pad 23. In the sealing resin 40, the first pad 23 is located closer to the second surface 40B than to the first surface 40A, and is exposed from the second surface 40B. The first pad 23 contains a metallic element. This metallic element is, for example, copper, silver, and nickel-phosphorus (Ni-P).

[0031] As shown in Figures 2 and 6, the first rewiring 24 is electrically connected to the first electrode 11 of the semiconductor element 10 and the first pad 23. One end of the first rewiring 24 is electrically connected to the bonding surface 112C of the terminal portion 112 of the first electrode 11. The other end of the first rewiring 24 is integrally connected to the first pad 23. That is, the first rewiring 24 is integral with the first pad 23. The first rewiring 24 is covered with a sealing resin 40. The first rewiring 24 extends in the first direction z. The first rewiring 24 contains the same elements as the metal elements contained in the first pad 23.

[0032] As shown in Figures 2 and 5, the second pad 25 is electrically connected to the control electrode 13 of the semiconductor element 10 via the second rewiring 26. This allows the semiconductor element 10 to be driven by applying a gate voltage to the second pad 25. In the sealing resin 40, the second pad 25 is located closer to the second surface 40B than to the first surface 40A, and is exposed from the second surface 40B. The second pad 25 is located next to the first pad 23 in the third direction y. The second pad 25 contains the same elements as the metal elements contained in the first pad 23.

[0033] As shown in Figures 2 and 5, the second rewiring 26 is electrically connected to the control electrode 13 of the semiconductor element 10 and the second pad 25. One end of the second rewiring 26 is electrically connected to the fourth portion 132 of the control electrode 13. The other end of the second rewiring 26 is integrally connected to the second pad 25. That is, the second rewiring 26 is integral with the second pad 25. At least a portion of the second rewiring 26 is covered by the sealing resin 40. In the semiconductor device A10, the second rewiring 26 is exposed from the first surface 40A of the sealing resin 40. Viewed in the second direction x, the first rewiring 24 overlaps the main body 14 of the semiconductor element 10 and the terminal portion 112 of the first electrode 11. Viewed in the first direction z, the first rewiring 24 overlaps the opening 112B of the terminal portion 112 of the first electrode 11. A portion of the first rewiring 24 is housed in the opening 112B. The second rewiring 26 contains the same elements as the metallic elements contained in the first pad 23.

[0034] As shown in Figures 5 to 8, the intermediate layer 50 is located on the opposite side of the main body 14 from the protective film 15 of the semiconductor element 10. The intermediate layer 50 covers the protective film 15. The intermediate layer 50 is an insulator. The intermediate layer 50 is made of a material including, for example, resin. The viscosity of the intermediate layer 50 in a flow state is lower than the viscosity of the sealing resin 40 in a flow state. The intermediate layer 50 is covered by the sealing resin 40. A portion of the intermediate layer 50 is housed in the opening 112B of the terminal portion 112 of the first electrode 11.

[0035] As shown in Figure 8, the intermediate layer 50 includes a portion sandwiched between the protective film 15 of the semiconductor element 10 and the terminal portion 112 of the first electrode 11 of the semiconductor element 10. The intermediate layer 50 is in contact with the second portion 111B of the pad portion 111 of the first electrode 11 and the bonding layer 19 of the semiconductor element 10.

[0036] As shown in Figures 1 and 4 to 8, the protective layer 61 is exposed to the outside. The protective layer 61 is laminated on the first exposed surface 112A of the terminal portion 112 of the first electrode 11, which is exposed from the first surface 40A of the sealing resin 40. Furthermore, the protective layer 61 is also laminated on the portion of the second electrode 12 that is exposed from the second surface 40B of the sealing resin 40. The protective layer 61 is a conductor containing a metallic element. The metallic element contained in the protective layer 61 is the same as the metallic element contained in the first pad 23.

[0037] As shown in Figures 1, 5, 8, and 9, the coating layer 62 covers the portion of the second rewiring 26 that is exposed from the first surface 40A of the sealing resin 40. Furthermore, at the terminal portion 112 of the first electrode 11, the coating layer 62 may also cover a portion of the first exposed surface 112A located around the opening 112B. In addition, the coating layer 62 may also cover a portion of each of the first pad 23 and the second pad 25. The coating layer 62 is an insulator. The coating layer 62 is in contact with the first surface 40A. The coating layer 62 is, for example, solder resist.

[0038] Next, a semiconductor module B10 according to the first embodiment of this disclosure will be described with reference to Figure 11. In the semiconductor module B10, a semiconductor device A10 is mounted on a substrate 70. Furthermore, in the semiconductor module B10, the drain of the semiconductor device A10 faces the substrate 70. Here, the cross-sectional position shown in Figure 11 corresponds to the cross-sectional position shown in Figure 6.

[0039] As shown in Figure 11, the semiconductor module B10 comprises a semiconductor device A10, a substrate 70, and a first conductive member 81. The substrate 70 includes an insulating substrate 71, a first conductive portion 72, and a second conductive portion 73. The first conductive portion 72 and the second conductive portion 73 are located on one side of the insulating substrate 71 in the first direction z. Each of the first conductive portion 72 and the second conductive portion 73 contains copper. The first conductive member 81 is, for example, a metal clip containing copper. The second electrode 12 of the semiconductor element 10 of the semiconductor device A10 is conductively bonded to the first conductive portion 72 via a protective layer 61 and a bonding layer 79. The bonding layer 79 is, for example, solder. Alternatively, the bonding layer 79 may be a sintered body of metal particles. In this case, the metal particles contain, for example, silver. Furthermore, the bonding layer 79 may be a metal layer formed by solid-phase diffusion. The first pad 23 of the semiconductor device A10 is conductively bonded to the second conductive portion 73 via a bonding layer 79. The first conductive member 81 is conductively bonded to the terminal portion 112 of the first electrode 11 of the semiconductor element 10 of the semiconductor device A10 via the bonding layer 79 and the protective layer 61. Alternatively, a wire containing aluminum, gold, or copper may be conductively bonded to the protective layer 61 covering the terminal portion 112 and to the first conductive member 81. In this case, the bonding layer 79 is not required.

[0040] In the semiconductor module B10, the base material 70 is a wiring board. Alternatively, the base material 70 may not include an insulating substrate 71 and may consist of metal leads including a first conductive portion 72 and a second conductive portion 73. Furthermore, the base material 70 may include a plurality of external terminals located on the opposite side of the insulating substrate 71 from the first conductive portion 72 and the second conductive portion 73 in the first direction z. In this configuration, the plurality of external terminals are individually electrically connected to the first conductive portion 72 and the second conductive portion 73.

[0041] Next, based on FIG. 12, the semiconductor module B20 on which the semiconductor device A10 is mounted will be described. In this figure, the same or similar elements as those of the semiconductor module B10 described above are denoted by the same reference numerals, and redundant descriptions are omitted. Here, the cross-sectional position shown in FIG. 12 corresponds to the cross-sectional position shown in FIG. 11.

[0042] In the semiconductor module B20, the mounting form of the semiconductor device A10 with respect to the base material 70 is different from that of the semiconductor module B10. In the semiconductor module B20, the source of the semiconductor device A10 faces the base material 70.

[0043] As shown in FIG. 12, the semiconductor module B20 includes a semiconductor device A10, a base material 70, a first conduction member 81, and a second conduction member 82. The base material 70 includes an insulating substrate 71 and a first conductive portion 72. The terminal portion 112 of the first electrode 11 of the semiconductor device A10 is conductively joined to the first conductive portion 72 through the protective layer 61 and the bonding layer 79. The first conduction member 81 is conductively joined to the second electrode 12 of the semiconductor element 10 of the semiconductor device A10 through the bonding layer 79 and the protective layer 61. The second conduction member 82 is, for example, a wire containing aluminum (Al). The second conduction member 82 is conductively joined to the first pad 23 of the semiconductor device A10.

[0044] Next, the operation and effect of the semiconductor device A10 will be described.

[0045] The semiconductor device A10 comprises a semiconductor element 10, a first pad 23, a first rewiring 24, a second pad 25, a second rewiring 26, and a sealing resin 40. The first electrode 11 of the semiconductor element 10 includes a pad portion 111 and a terminal portion 112 having a bonding surface 112C. The first rewiring 24 is electrically connected to the bonding surface 112C. The second electrode 12 and the second pad 25 are exposed from the sealing resin 40. The terminal portion 112 is exposed from the first surface 40A of the sealing resin 40 facing one side in the first direction z. The first pad 23 is exposed from the second surface 40B of the sealing resin 40 facing the other side in the first direction z. With this configuration, the first rewiring 24 overlaps the terminal portion 112 when viewed in the first direction z. As a result, the first rewiring 24 can be positioned inward from the terminal portion 112 when viewed in the first direction z, thereby further reducing the dimensions of the sealing resin 40 in the direction perpendicular to the first direction z. Furthermore, the length of the conductive path of the first rewiring 24 can be shortened while the conductive path of the first rewiring 24 can be simplified. Therefore, with this configuration, it is possible to detect the magnitude of the current flowing through the first electrode 11 in the semiconductor device A10 while suppressing the increase in size and complexity of the semiconductor device A10.

[0046] The first rewiring 24 is covered with sealing resin 40. This configuration eliminates the need for insulation measures for the first rewiring 24 from the outside of the semiconductor device A10.

[0047] The semiconductor element 10 has a main body 14 located between the second electrode 12 and the pad portion 111 of the first electrode 11 in the first direction z. Viewed in the second direction x, the first rewiring 24 overlaps the main body 14. Furthermore, the first rewiring 24 extends in the first direction z. By adopting this configuration, the length of the conductive path of the first rewiring 24 can be further shortened.

[0048] The semiconductor device A10 further includes a second rewiring 26 that conducts to the control electrode 13 and the second pad 25. When viewed in the second direction x, the second rewiring 26 overlaps with the terminal portion 112 of the first electrode 11. By adopting this configuration, even in a configuration where the first electrode 11 is exposed from the first surface 40A of the sealing resin 40 and the second electrode 12 is exposed from the second surface 40B of the sealing resin 40, a housing space of the second rewiring 26 in the first direction z can be secured in the semiconductor device A10.

[0049] In the first electrode 11, the dimension of the terminal portion 112 in the first direction z is larger than the dimension of the pad portion 111 in the first direction z. By adopting this configuration, the degree of heat diffusion in the direction orthogonal to the first direction z is larger in the terminal portion 112 than in the pad portion 111. Thereby, the heat generated in the first electrode 11 can be effectively released to the outside. Further, when viewed in the first direction z, by adopting a configuration in which the terminal portion 112 protrudes outward from the main body 14 of the semiconductor element 10, the degree of heat diffusion in the terminal portion 112 becomes even larger. Thereby, the heat generated in the first electrode 11 can be more effectively released to the outside.

[0050] The terminal portion 112 of the first electrode 11 is located on the opposite side of the first rewiring 24 with respect to the main body 14 of the semiconductor element 10 in the second direction x, and includes a portion that protrudes outward from the main body 14 when viewed in the first direction z. By adopting this configuration, in the first electrode 11, the area of the terminal portion 112 is further expanded than the area of the pad portion 111 when viewed in the first direction z. Thereby, the heat generated in the first electrode 11 can be more effectively released to the outside.

[0051] The pad portion 111 of the first electrode 11 has a first portion 111A and a second portion 111B. The dimension t2 of the second portion 111B in the first direction z is larger than the dimension t1 of the first portion 111A in the first direction z. The semiconductor element 10 has a protective film 15 that covers the main body 14 and a part of the first electrode 11 and is an insulator. A part of the second portion 111B protrudes in the first direction z from the protective film 15. By adopting this configuration, when the terminal portion 112 of the first electrode 11 is electrically connected to the pad portion 111, it is possible to more reliably prevent the terminal portion 112 from contacting the main body 14.

[0052] The semiconductor device A10 further comprises an insulator intermediate layer 50. The intermediate layer 50 includes a portion sandwiched between the protective film 15 of the semiconductor element 10 and the terminal portion 112 of the first electrode 11. The intermediate layer 50 is in contact with the second portion 111B of the pad portion 111 of the first electrode 11. With this configuration, the gap between the protective film 15 and the terminal portion 112 is filled by the intermediate layer 50. This improves the dielectric strength of the semiconductor device A10.

[0053] The intermediate layer 50 is in contact with the junction layer 19 of the semiconductor element 10. By adopting this configuration, the generation of leakage current from the first electrode 11 in the semiconductor device A10 can be suppressed.

[0054] The terminal portion 112 of the first electrode 11 has an opening 112B that penetrates in the first direction z. The opening 112B is opened from one side in the second direction x. When viewed in the first direction z, the control electrode 13 and the second rewiring 26 each overlap the opening 112B. By adopting this configuration, short circuits between the control electrode 13 and the second rewiring 26 and the terminal portion 112 can be prevented more reliably.

[0055] A portion of the intermediate layer 50 is housed in the opening 112B of the terminal portion 112 of the first electrode 11. This configuration suppresses the generation of air gaps in the opening 112B. As a result, the dielectric strength of the semiconductor device A10 can be effectively improved.

[0056] Second Embodiment: A semiconductor device A20 according to the second embodiment of the present disclosure will be described based on Figures 13 to 17. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 13 shows the sealing resin 40, the intermediate layer 50, and the protective layer 61 transparent. In Figure 13, the transparent sealing resin 40 is shown by dashed lines.

[0057] In semiconductor device A20, the configuration of the second pad 25 and the second rewiring 26, and the absence of a covering layer 62, differ from those of semiconductor device A10.

[0058] As shown in Figures 13 to 17, the dimension of the second pad 25 in the first direction z is larger than the dimension of the second pad 25 in the first direction z of the semiconductor device A10. The dimension of the second pad 25 in the first direction z is larger than the dimension of the pad portion 111 of the first electrode 11 in the first direction z. The second pad 25 is made of a metal lead. The metal lead contains copper. The second pad 25 has a second end face 251. The second end face 251 faces one side of the second direction x. The second end face 251 is exposed to the outside from one of the two third surfaces 40C of the sealing resin 40. As shown in Figures 14, 16 and 17, a protective layer 61 is laminated on the portion of the second pad 25 that is exposed from the second surface 40B of the sealing resin 40.

[0059] As shown in Figures 13 and 16, the second rewiring 26 is electrically bonded to the fourth portion 132 of the control electrode 13 of the semiconductor element 10 and to the second pad 25. The second rewiring 26 is covered with a sealing resin 40. The second rewiring 26 is a wire. The wire may include, for example, gold, aluminum, and copper. Alternatively, the second rewiring 26 may be a metal lead containing copper.

[0060] Next, the effects and benefits of semiconductor device A20 will be explained.

[0061] The semiconductor device A20 comprises a semiconductor element 10, a first pad 23, a first rewiring 24, a second pad 25, a second rewiring 26, and a sealing resin 40. The first electrode 11 of the semiconductor element 10 includes a pad portion 111 and a terminal portion 112 having a bonding surface 112C. The first rewiring 24 is electrically connected to the bonding surface 112C. The second electrode 12 and the second pad 25 are exposed from the sealing resin 40. The terminal portion 112 is exposed from the first surface 40A of the sealing resin 40 facing one side in the first direction z. The first pad 23 is exposed from the second surface 40B of the sealing resin 40 facing the other side in the first direction z. Therefore, with this configuration, it is possible to detect the magnitude of the current flowing through the first electrode 11 in the semiconductor device A20 while suppressing the increase in size and complexity of the semiconductor device A20. Furthermore, by having a configuration common to semiconductor device A10, semiconductor device A20 achieves the same effects and functions as semiconductor device A10.

[0062] The semiconductor device A20 includes a second rewiring 26 covered with a sealing resin 40. By adopting this configuration, the coating layer 62 is unnecessary, and thus the structure of the semiconductor device A20 can be further simplified.

[0063] In the semiconductor device A20, the second pad 25 has a second end face 251 facing the second direction x. The second end face 251 is exposed from the sealing resin 40. With this configuration, when the semiconductor device A20 is mounted on the wiring board, solder adheres to the second end face 251 as well. This further improves the bonding strength of the second pad 25 to the wiring board.

[0064] Third Embodiment: A semiconductor device A30 according to the third embodiment of the present disclosure will be described based on Figures 18 to 22. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 18 shows the sealing resin 40, intermediate layer 50, protective layer 61, and coating layer 62 transparent. In Figure 18, the transparent sealing resin 40 is shown by dashed lines.

[0065] In semiconductor device A20, the configuration of the first pad 23 and the first rewiring 24 differs from that of semiconductor device A10.

[0066] As shown in Figures 18 to 22, the first rewiring 24 is integrated with the first pad 23. The integrated first pad 23 and first rewiring 24 consist of metal leads. These metal leads contain copper. The first pad 23 has a first end face 231. The first end face 231 faces one side in the second direction x. The first end face 231 is exposed to the outside from one of the two third surfaces 40C of the sealing resin 40. As shown in Figures 19, 21, and 22, a protective layer 61 is laminated on the portion of the first pad 23 that is exposed from the second surface 40B of the sealing resin 40.

[0067] Next, the effects and benefits of semiconductor device A30 will be explained.

[0068] The semiconductor device A30 comprises a semiconductor element 10, a first pad 23, a first rewiring 24, a second pad 25, a second rewiring 26, and a sealing resin 40. The first electrode 11 of the semiconductor element 10 includes a pad portion 111 and a terminal portion 112 having a bonding surface 112C. The first rewiring 24 is electrically connected to the bonding surface 112C. The second electrode 12 and the second pad 25 are exposed from the sealing resin 40. The terminal portion 112 is exposed from the first surface 40A of the sealing resin 40 facing one side in the first direction z. The first pad 23 is exposed from the second surface 40B of the sealing resin 40 facing the other side in the first direction z. Therefore, with this configuration, it is possible to detect the magnitude of the current flowing through the first electrode 11 in the semiconductor device A30 while suppressing the increase in size and complexity of the semiconductor device A30. Furthermore, by having a configuration common to semiconductor device A10, semiconductor device A30 achieves the same effects and functions as semiconductor device A10.

[0069] In the semiconductor device A30, the first pad 23 has a first end face 231 facing the second direction x. The first end face 231 is exposed from the sealing resin 40. With this configuration, when the semiconductor device A30 is mounted on a wiring board, solder adheres to the first end face 231 as well. This further improves the bonding strength of the first pad 23 to the wiring board.

[0070] Fourth Embodiment: A semiconductor device A40 according to the fourth embodiment of the present disclosure will be described based on Figures 23 to 25. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 23 shows the sealing resin 40, the intermediate layer 50, and the protective layer 61 transparent. In Figure 23, the transparent sealing resin 40 is shown by dashed lines.

[0071] In semiconductor device A40, the configuration of the first pad 23, first redistribution 24, second pad 25, and second redistribution 26, and the absence of a covering layer 62, differ from those of semiconductor device A10.

[0072] As shown in Figures 23 to 25, the configurations of the first pad 23 and the first rewiring 24 are the same as those of the first pad 23 and the first rewiring 24 provided in the semiconductor device A30 described above. That is, the first pad 23 and the first rewiring 24 consist of an integrated metal lead.

[0073] As shown in Figures 23 to 25, the configurations of the second pad 25 and the second rewiring 26 are the same as those of the second pad 25 and the second rewiring 26 provided in the semiconductor device A20 described above. That is, the second pad 25 consists of a metal lead. The second rewiring 26 consists of either a wire or a metal lead. The dimension of the second pad 25 in the first direction z is equal to the dimension of the integrated first pad 23 and first rewiring 24 in the first direction z. The second pad 25 and the integrated first pad 23 and first rewiring 24 can be obtained from the same lead frame.

[0074] Next, the effects and benefits of semiconductor device A40 will be explained.

[0075] The semiconductor device A40 comprises a semiconductor element 10, a first pad 23, a first rewiring 24, a second pad 25, a second rewiring 26, and a sealing resin 40. The first electrode 11 of the semiconductor element 10 includes a pad portion 111 and a terminal portion 112 having a bonding surface 112C. The first rewiring 24 is electrically connected to the bonding surface 112C. The second electrode 12 and the second pad 25 are exposed from the sealing resin 40. The terminal portion 112 is exposed from the first surface 40A of the sealing resin 40 facing one side in the first direction z. The first pad 23 is exposed from the second surface 40B of the sealing resin 40 facing the other side in the first direction z. Therefore, with this configuration, it is possible to detect the magnitude of the current flowing through the first electrode 11 in the semiconductor device A40 while suppressing the increase in size and complexity of the semiconductor device A40. Furthermore, semiconductor device A40 has a configuration common to semiconductor device A10, thereby achieving the same effects and capabilities as semiconductor device A10.

[0076] In semiconductor device A40, the first redistribution 24 is integrated with the first pad 23. The integrated first pad 23 and first redistribution 24 and the second pad 25 are made of metal leads. The second redistribution 26 is made of either a wire or a metal lead. By adopting this configuration, when manufacturing semiconductor device A40, it is possible to select a conventional sealing resin 40 instead of the sealing resin 40 used in the LDS method.

[0077] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0078] This disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a semiconductor element having a first electrode, a second electrode and a control electrode; a first pad conductive to the first electrode; a second pad conductive to the control electrode; a first rewiring conductive to the first electrode and the first pad; and a sealing resin covering a part of the semiconductor element, wherein the first electrode includes a pad portion and a terminal portion electrically connected to the pad portion; the terminal portion faces one side in a first direction and has a bonding surface electrically connected to the pad portion; the first rewiring is electrically connected to the bonding surface; the second electrode and the second pad are exposed from the sealing resin; the sealing resin has a first surface and a second surface facing opposite directions in the first direction; the terminal portion is exposed from the first surface; and the first pad is exposed from the second surface. Appendix 2. The semiconductor device according to Appendix 1, wherein the first rewiring is covered by the sealing resin. Appendix 3. The semiconductor device according to Appendix 2, wherein the second electrode is located on the opposite side from the pad portion in the first direction, and the control electrode is located on the same side as the pad portion in the first direction. Appendix 4. The semiconductor device according to Appendix 3, wherein the semiconductor element has a body located between the pad portion and the second electrode in the first direction, and the pad portion and the second electrode are electrically connected to the body. Appendix 5. The semiconductor device according to Appendix 4, wherein the first rewiring extends in the first direction. Appendix 6. The semiconductor device according to Appendix 4, wherein the second surface faces the same side as the bonding surface in the first direction, and the second electrode and the second pad are exposed from the second surface. Appendix 7. The semiconductor device according to Appendix 6, wherein the first rewiring is integrated with the first pad. Appendix 8. The semiconductor device according to Appendix 7, further comprising a second rewiring that is electrically connected to the control electrode and the second pad, and at least a portion of the second rewiring is covered with the sealing resin. Appendix 9. The second rewiring is exposed from the first surface, and is the semiconductor device described in Appendix 8.Note 10. The semiconductor device according to Note 9, further comprising an insulating coating layer, wherein the coating layer covers a portion of the second rewiring and is in contact with the first surface. Note 11. The semiconductor device according to Note 8, wherein the second pad has an end face facing the second direction, and the end face is exposed from the sealing resin. Note 12. The semiconductor device according to Note 8, wherein the terminal portion has an opening penetrating in the first direction, the control electrode overlaps the opening when viewed in the first direction, and a portion of the second rewiring is housed in the opening. Note 13. The semiconductor device according to any one of Notes 8 to 12, wherein the dimension of the terminal portion in the first direction is greater than the dimension of the pad portion in the first direction. Note 14. The semiconductor device according to Note 13, wherein the terminal portion is located on the opposite side from the first rewiring with respect to the main body in the second direction, and includes a portion that protrudes outward from the main body when viewed in the first direction. Note 15. A semiconductor device according to Appendix 14, further comprising a protective layer containing a metal element, wherein the protective layer is laminated on the second electrode and exposed from the sealing resin. Appendix 16. A semiconductor device according to Appendix 15, wherein the metal element contained in the protective layer is the same as the metal element contained in the first pad. Appendix 17. A semiconductor device according to Appendix 15, wherein the protective layer is laminated on the terminal portion and exposed from the sealing resin. Appendix 18. A semiconductor module comprising the semiconductor device according to Appendix 13 and a substrate including a conductive portion, wherein the semiconductor device is mounted on the substrate, and either the terminal portion or the second electrode is electrically bonded to the conductive portion. Appendix 19. A semiconductor device according to Appendix 12, wherein the pad portion has a first portion that is conductive to the main body, and a second portion located between the first portion and the terminal portion and electrically connected to the first portion, the terminal portion is electrically connected to the second portion, and the dimension of the second portion in the first direction is greater than the dimension of the first portion in the first direction.Note 20. The semiconductor device according to Note 19, wherein the semiconductor element is located on the opposite side of the second electrode with respect to the main body and has an insulating protective film, the protective film covers a portion of the main body and the pad portion, and a portion of the second portion protrudes in the first direction beyond the protective film. Note 21. The semiconductor device according to Note 20, further comprising an insulating intermediate layer, the intermediate layer including a portion sandwiched between the protective film and the terminal portion, and the intermediate layer in contact with the second portion. Note 22. The semiconductor device according to Note 21, wherein the intermediate layer is covered with the sealing resin. Note 23. The semiconductor device according to Note 22, wherein a portion of the intermediate layer is housed in the opening. Note 24. The semiconductor device according to Note 8, wherein, viewed in the second direction, the second rewiring overlaps the terminal portion.

[0079] A10-A40: Semiconductor device, B10, B20: Semiconductor module, 10: Semiconductor element, 11: First electrode, 111: Pad portion, 111A, 111B: First part, second part, 112: Terminal portion, 112A: First exposed surface, 112B: Opening, 12: Second electrode, 13: Control electrode, 131, 132: Third part, fourth part, 14: Main body, 15: Protective film, 151, 152: First opening, second opening, 19: Bonding layer, 23: First pad Pad, 231: First end face, 24: First rewiring, 25: Second pad, 251: Second end face, 26: Second rewiring, 40: Sealing resin, 40A, 40B, 40C: First surface, second surface, third surface, 50: Intermediate layer, 61: Protective layer, 62: Coating layer, 70: Base material, 71: Insulating substrate, 72, 73: First conductive part, second conductive part, 79: Bonding layer, 81, 82: First conductive member, second conductive member, z, x, y: First direction, second direction, third direction

Claims

1. A semiconductor device comprising: a semiconductor element having a first electrode, a second electrode and a control electrode; a first pad conductive to the first electrode; a second pad conductive to the control electrode; a first rewiring conductive to the first electrode and the first pad; and a sealing resin covering a part of the semiconductor element, wherein the first electrode includes a pad portion and a terminal portion electrically connected to the pad portion; the terminal portion faces one side in a first direction and has a bonding surface electrically connected to the pad portion; the first rewiring is electrically connected to the bonding surface; the second electrode and the second pad are exposed from the sealing resin; the sealing resin has a first surface and a second surface facing opposite directions in the first direction; the terminal portion is exposed from the first surface; and the first pad is exposed from the second surface.

2. The semiconductor device according to claim 1, wherein the first rewiring is covered with the sealing resin.

3. The semiconductor device according to claim 2, wherein the second electrode is located on the opposite side from the pad portion in the first direction, and the control electrode is located on the same side as the pad portion in the first direction.

4. The semiconductor device according to claim 3, wherein the semiconductor element has a body located between the pad portion and the second electrode in the first direction, and the pad portion and the second electrode are electrically connected to the body.

5. The semiconductor device according to claim 4, wherein the first rewiring extends in the first direction.

6. The semiconductor device according to claim 4, wherein the second surface faces the same side as the bonding surface in the first direction, and the second electrode and the second pad are exposed from the second surface.

7. The semiconductor device according to claim 6, wherein the first rewiring is integrated with the first pad.

8. The semiconductor device according to claim 7, further comprising a second rewiring that is electrically connected to the control electrode and the second pad, wherein at least a portion of the second rewiring is covered with the sealing resin.

9. The semiconductor device according to claim 8, wherein the second rewiring is exposed from the first surface.

10. The semiconductor device according to claim 9, further comprising an insulating coating layer, wherein the coating layer covers a portion of the second rewiring and is in contact with the first surface.

11. The semiconductor device according to claim 8, wherein the second pad has an end face facing the second direction, and the end face is exposed from the sealing resin.

12. The semiconductor device according to claim 8, wherein the terminal portion has an opening that penetrates in the first direction, the control electrode overlaps the opening when viewed in the first direction, and a portion of the second rewiring is housed in the opening.

13. The semiconductor device according to any one of claims 8 to 12, wherein the dimension of the terminal portion in the first direction is greater than the dimension of the pad portion in the first direction.

14. The semiconductor device according to claim 13, wherein the terminal portion is located on the opposite side of the first rewiring with respect to the main body in the second direction, and includes a portion that protrudes outward from the main body when viewed in the first direction.

15. The semiconductor device according to claim 14, further comprising a protective layer containing a metallic element, wherein the protective layer is laminated on the second electrode and exposed from the sealing resin.

16. The semiconductor device according to claim 15, wherein the metal element contained in the protective layer is the same as the metal element contained in the first pad.

17. The semiconductor device according to claim 15, wherein the protective layer is laminated on the terminal portion and is exposed from the sealing resin.

18. A semiconductor module comprising: a semiconductor device according to claim 13; a substrate including a conductive portion, wherein the semiconductor device is mounted on the substrate, and either the terminal portion or the second electrode is electrically bonded to the conductive portion.

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