Semiconductor device and semiconductor device assembly

Abstract

This semiconductor device comprises a semiconductor element, a lead, an insulating substrate, and a sealing resin. The lead includes a bonding portion having a main surface and a rear surface respectively facing one side and the other side in a thickness direction, and a terminal portion. The lead is electrically connected to the semiconductor element. The sealing resin has a resin surface facing the one side in the thickness direction, a resin surface facing the other side in the thickness direction, and a resin surface facing one side in a first direction orthogonal to the thickness direction, and covers the semiconductor element, the bonding portion, and at least a part of the insulating substrate. The terminal portion includes a portion located closer to the one side in the first direction than the resin surface, and a part of the terminal portion is exposed from the sealing resin. The insulating substrate is bonded to the rear surface. The sealing resin has a step portion that is displaced in the first direction from the resin surface, and the step portion is positioned between the terminal portion and the resin surface in the thickness direction.

Description

Semiconductor device, and semiconductor device assembly

[0001] The present disclosure relates to a semiconductor device and a semiconductor device assembly.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes leads, a semiconductor element, and a sealing resin. The semiconductor element is mounted on a lead (die pad portion). The sealing resin covers a part of the lead and the semiconductor element. The semiconductor element is mounted on a first lead main surface facing one side in the thickness direction of the die pad portion. The first lead back surface facing the opposite side (the other side in the thickness direction) of the first lead main surface of the die pad portion is exposed from the sealing resin and functions as a heat dissipation surface. With this structure, the heat generated in the semiconductor element can be efficiently released from the back surface side (heat dissipation surface) of the die pad portion. The first terminal portion of the lead is exposed from the sealing resin. The tip of the first terminal portion is located on one side in the thickness direction of the sealing resin and is used for, for example, surface mounting on a circuit board or the like. When a heat sink (heat dissipation member) is attached to the above semiconductor device, if the distance between the heat sink and the first terminal portion is short, surface discharge may occur on the surface of the sealing resin between the heat sink and the first terminal portion, and there is a risk that the heat sink and the first terminal portion may be short-circuited.

[0003] International Publication No. 2023 / 100731

[0004] [Summary] One problem of the present disclosure is to provide a semiconductor device that has been improved from the prior art. In particular, in view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device suitable for preventing surface discharge between the semiconductor device and an externally mounted heat dissipation member.

[0005] A semiconductor device provided by a first aspect of this disclosure includes a semiconductor element, a first lead that is electrically connected to the semiconductor element, a first junction having a first lead main surface facing one side in the thickness direction and a first lead back surface facing the other side in the thickness direction, and a first terminal portion, and an insulating substrate having a first resin surface facing one side in the thickness direction, a second resin surface facing the other side in the thickness direction, and a third resin surface facing one side in a first direction perpendicular to the thickness direction, and a sealing resin that covers the semiconductor element, the first junction, and at least a portion of the insulating substrate. The first terminal portion includes a portion located on one side in the first direction relative to the third resin surface, and at least a portion of it is exposed from the sealing resin. The insulating substrate is located on the other side in the thickness direction relative to the first junction and is bonded to the first lead back surface. The sealing resin has a stepped portion that is displaced from the third resin surface in the first direction. The stepped portion is located between the first terminal portion and the second resin surface in the thickness direction.

[0006] A semiconductor device assembly provided by a second aspect of the present disclosure comprises a semiconductor device relating to a first aspect of the present disclosure and a heat dissipation member integrally attached to the other side of the semiconductor device in the thickness direction.

[0007] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings.

[0008] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 3 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 4 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 5 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 6 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 7 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 8 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 9 is a front view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 10 is a right side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 11 is a rear view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 12 is a left side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 13 is a bottom view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 14 is a cross-sectional view along the line XIV-XIV in Figure 13. Figure 15 is a cross-sectional view along the line XV-XV in Figure 13. Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 13. Figure 17 is a cross-sectional view along the line XVII-XVII in Figure 13. Figure 18 is a cross-sectional view along the line XVIII-XVIII in Figure 13. Figure 19 is a cross-sectional view showing the usage state of a semiconductor device according to the first embodiment of this disclosure, and represents the same cross-section as in Figure 14. Figure 20 is a schematic diagram of a vehicle equipped with a semiconductor device according to the first embodiment of this disclosure. Figure 21 is a perspective view showing a semiconductor device according to a first modification of the first embodiment of this disclosure. Figure 22 is a cross-sectional view of a semiconductor device according to a first modification of the first embodiment of this disclosure, and represents the same cross-section as in Figure 14. Figure 23 is a cross-sectional view of a semiconductor device according to a second modification of the first embodiment of this disclosure, and represents the same cross-section as in Figure 14. Figure 24 is a perspective view showing a semiconductor device according to a third modification of the first embodiment of this disclosure. Figure 25 is a plan view showing a semiconductor device according to a third modification of the first embodiment of this disclosure. Figure 26 is a cross-sectional view along the line XXVI-XXVI in Figure 25. Figure 27 is a bottom view of a main part showing a semiconductor device according to a second embodiment of the present disclosure. Figure 28 is a cross-sectional view taken along the line XXVIII-XXVIII in Figure 27.Figure 29 is a bottom view of a main part showing a semiconductor device according to the third embodiment of this disclosure. Figure 30 is a cross-sectional view along the line XXX-XXX in Figure 29. Figure 31 is a perspective view showing a semiconductor device according to the fourth embodiment of this disclosure. Figure 32 is a cross-sectional view of the semiconductor device according to the fourth embodiment of this disclosure, showing the same cross-section as in Figure 14. Figure 33 is a perspective view showing a semiconductor device according to the fifth embodiment of this disclosure. Figure 34 is a perspective view showing a semiconductor device according to the fifth embodiment of this disclosure. Figure 35 is a plan view showing a semiconductor device according to the fifth embodiment of this disclosure. Figure 36 is a front view showing a semiconductor device according to the fifth embodiment of this disclosure. Figure 37 is a rear view showing a semiconductor device according to the fifth embodiment of this disclosure. Figure 38 is a partially enlarged view of Figure 33. Figure 39 is a perspective view showing a semiconductor device according to a first modification of the fifth embodiment of this disclosure. Figure 40 is a perspective view showing a semiconductor device according to a first modification of the fifth embodiment of this disclosure. Figure 41 is a front view showing a semiconductor device according to a first modification of the fifth embodiment of this disclosure. Figure 42 is a rear view showing a semiconductor device according to a first modification of the fifth embodiment of this disclosure. Figure 43 is a magnified view of a portion of Figure 39.

[0009] [Detailed Description] Preferred embodiments of this disclosure will be described below with reference to the drawings.

[0010] The terms "first," "second," "third," etc., used in this disclosure are merely labels and are not necessarily intended to assign a sequence to the objects.

[0011] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is in contact with object B and located on object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, "object A overlaps with object B when viewed in a certain direction" includes, unless otherwise specified, "object A overlaps with all of object B" and "object A overlaps with a part of object B." Also, "object A (or its material) includes material C" includes "object A (or its material) consists of material C" and "the main component of object A (or its material) is material C." In addition, in this disclosure, "a surface A faces direction B (either one or the other)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B.

[0012] First Embodiment: Figures 1 to 19 show a semiconductor device according to the first embodiment of the present disclosure. The application of the semiconductor device A10 of this embodiment is not limited in any way, and it can be used in electronic devices equipped with power conversion circuits, such as DC-DC converters. The semiconductor device A10 comprises a conductive member 10, a semiconductor element 20, connecting members 31, 32, 33, sealing resin 40, insulating substrate 50, and heat sink 60.

[0013] Figures 1 to 3 are perspective views showing the semiconductor device A10. Figures 4 to 6 are perspective views of the main parts of the semiconductor device A10. In Figures 4 to 6, the outline of the sealing resin 40 is shown by dashed lines. Figure 7 is a plan view showing the semiconductor device A10. Figure 8 is a bottom view showing the semiconductor device A10. Figure 9 is a front view showing the semiconductor device A10. Figure 10 is a right side view showing the semiconductor device A10. Figure 11 is a rear view showing the semiconductor device A10. Figure 12 is a left side view showing the semiconductor device A10. Figure 13 is a bottom view of the main parts of the semiconductor device A10. In Figure 13, the outline of the sealing resin 40 is shown by dashed lines. Figure 14 is a cross-sectional view along line XIV-XIV in Figure 13. Figure 15 is a cross-sectional view along line XV-XV in Figure 13. Figure 16 is a cross-sectional view along line XVI-XVI in Figure 13. Figure 17 is a cross-sectional view taken along the line XVII-XVII in Figure 13. Figure 18 is a cross-sectional view taken along the line XVIII-XVIII in Figure 13. Figure 19 is a cross-sectional view showing the semiconductor device A10 in use.

[0014] In describing the semiconductor device A10, for example, the thickness direction (planar view direction) of the semiconductor device A10 is an example of the "thickness direction" in this disclosure and is referred to as the "thickness direction z". Also, for example, the direction perpendicular to the thickness direction z is referred to as the "first direction x". Also, for example, the direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y". Also, for example, one side of the thickness direction z is an example of the "one side of the thickness direction" in this disclosure and is referred to as the "z1 side of the thickness direction z", and the other side of the thickness direction z is an example of the "other side of the thickness direction" in this disclosure and is referred to as the "z2 side of the thickness direction z". Also, for example, one side of the first direction x is an example of the "one side of the first direction" in this disclosure and is referred to as the "x1 side of the first direction x", and the other side of the first direction x is an example of the "other side of the first direction" in this disclosure and is referred to as the "x2 side of the first direction x". For example, one side of the second direction y is an example of the "one side of the second direction" in this disclosure and is referred to as the "y1 side of the second direction y," and the other side of the second direction y is an example of the "other side of the second direction" in this disclosure and is referred to as the "y2 side of the second direction y."

[0015] The conductive member 10 is a member that constitutes a conductive path to the semiconductor element 20. The conductive member 10 in this embodiment includes a first lead 11, a second lead 12, a third lead 13, and a fourth lead 14. The material of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14 is not limited and includes, for example, copper (Cu) or a copper alloy. In addition, the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14 may be plated with silver (Ag), nickel (Ni), tin (Sn), or the like in appropriate places.

[0016] As shown in Figures 1 to 18, the first lead 11 has a first joint portion 111 and a first terminal portion 112. The first joint portion 111 has a first lead main surface 1111 and a first lead back surface 1112. The first lead main surface 1111 is the surface facing the z1 side in the thickness direction z. The first lead back surface 1112 is the surface facing the z2 side in the thickness direction z.

[0017] The shape of the first joint portion 111 is not limited in any way. In the illustrated example, the first joint portion 111 is rectangular when viewed in the thickness direction z. Also, the shapes of the first lead main surface 1111 and the first lead back surface 1112 are not limited in any way, and in the illustrated example, they are rectangular when viewed in the thickness direction z.

[0018] The first terminal portion 112 has a first portion 1121 and two second portions 1122. The first portion 1121 is connected to the first joint portion 111 and extends from the first joint portion 111 toward the x1 side in the first direction x, and is parallel to the xy plane in the illustrated example. The first terminal portion 112 in this embodiment has only one first portion 1121. The shape of the first portion 1121 is not limited in any way, and in the illustrated example it is rectangular when viewed in the thickness direction z.

[0019] The two second parts 1122 include portions located on the z1 side in the thickness direction z relative to the first part 1121. The two second parts 1122 are used when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0020] In this embodiment, the two second parts 1122 extend outward in the second direction y from the x1 end of the first part 1121 in the first direction x. The two second parts 1122 are at the same (or approximately the same) position in the first direction x. The shape of the second parts 1122 is not limited in any way, and in the illustrated example, each of the two second parts 1122 is rectangular in shape and extends in the second direction y when viewed in the thickness direction z. Each of the two second parts 1122 has a connecting part 1122a, a bent part 1122b, and a mounting part 1122c. The connecting part 1122a is connected to the first part 1121 and extends from the first part 1121 in the second direction y. The bent portion 1122b is connected to the bent portion 1122b and is inclined with respect to the thickness direction z (yz plane) such that it is located on the z1 side of the thickness direction z as it moves away from the connecting portion 1122a in the second direction y. The mounting portion 1122c is connected to the bent portion 1122b and is located on the z1 side of the thickness direction z than the bent portion 1122b. The mounting portion 1122c is the part used when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0021] The second lead 12 is located away from the first lead 11 (first joint 111) on the x2 side in the first direction x. The second lead 12 has a pad portion 121 and a plurality of second terminal portions 122.

[0022] The pad portion 121 has a second lead main surface 1211 and a second lead back surface 1212. The second lead main surface 1211 is the surface facing the z1 side in the thickness direction z. The second lead back surface 1212 is the surface facing the z2 side in the thickness direction z. A connecting member 31 is connected to the second lead main surface 1211. The shape of the pad portion 121 is not limited in any way, and in the illustrated example, it is an elongated rectangle with the second direction y as the longitudinal direction. Also, the size of the pad portion 121 in the thickness direction z is the same as (or approximately the same as) that of the first joint portion 111. In the illustrated example, the position of the second lead main surface 1211 in the thickness direction z is located on the z1 side in the thickness direction z than the first lead main surface 1111 of the first joint portion 111.

[0023] Multiple second terminal portions 122 are arranged in a line in the second direction y. The second terminal portion 122 has a fourth portion 1221, a fifth portion 1222, and a sixth portion 1223.

[0024] The fourth part 1221 is connected to the pad portion 121 and extends from the pad portion 121 toward the x2 side in the first direction x, and in the illustrated example it is parallel to the xy plane. The shape of the fourth part 1221 is not limited in any way, and in the illustrated example it is substantially rectangular when viewed in the thickness direction z.

[0025] The fifth part 1222 is located on the z1 side in the thickness direction z relative to the fourth part 1221. The fifth part 1222 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The fifth part 1222 has a shape that extends along the first direction x.

[0026] The sixth section 1223 is interposed between the fourth section 1221 and the fifth section 1222. The sixth section 1223 extends from the fourth section 1221 towards the z1 side in the thickness direction z. In the illustrated example, the sixth section 1223 is inclined with respect to the thickness direction z (yz plane). The shape of the sixth section 1223 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the first direction x.

[0027] The third lead 13 is located away from the first lead 11 (first joint 111) on the x2 side in the first direction x. The third lead 13 is also aligned with the second lead 12 in the second direction y. The third lead 13 has a pad portion 131 and a third terminal portion 132.

[0028] The pad portion 131 has a third lead main surface 1311 and a third lead back surface 1312. The third lead main surface 1311 is the surface facing the z1 side in the thickness direction z. The third lead back surface 1312 is the surface facing the z2 side in the thickness direction z. A connecting member 32 is connected to the third lead main surface 1311. The shape of the pad portion 131 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the thickness direction z. Also, when viewed in the thickness direction z, the pad portion 131 is smaller than the pad portion 121. Also, the size of the pad portion 131 in the thickness direction z is the same as (or approximately the same as) the first joint portion 111 and the pad portion 121. In the illustrated example, the position of the third lead main surface 1311 in the thickness direction z is located on the z1 side in the thickness direction z than the first lead main surface 1111 of the first joint portion 111. Furthermore, the position of the third lead main surface 1311 in the thickness direction z is the same as (or approximately the same as) the second lead main surface 1211 of the pad portion 121.

[0029] The third terminal portion 132 has a seventh portion 1321, an eighth portion 1322, and a ninth portion 1323.

[0030] The seventh part 1321 is connected to the pad portion 131 and extends from the pad portion 131 toward the x2 side in the first direction x, and in the illustrated example it is parallel to the xy plane. The shape of the seventh part 1321 is not limited in any way, and in the illustrated example it is substantially rectangular when viewed in the thickness direction z.

[0031] The eighth part 1322 is located on the z1 side in the thickness direction z relative to the seventh part 1321. The eighth part 1322 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The eighth part 1322 has a shape that extends along the first direction x.

[0032] Part 9 1323 is interposed between Part 7 1321 and Part 8 1322. Part 9 1323 extends from Part 7 1321 towards z1 in the thickness direction z. In the illustrated example, Part 9 1323 is inclined with respect to the thickness direction z (yz plane). The shape of Part 9 1323 is not limited, and in the illustrated example, it is rectangular when viewed in the first direction x.

[0033] The fourth lead 14 is located away from the first lead 11 (first joint 111) on the x2 side in the first direction x. The fourth lead 14 is also located between the second lead 12 and the third lead 13 in the y direction. The fourth lead 14 has a pad portion 141 and a fourth terminal portion 142.

[0034] The pad portion 141 has a fourth lead main surface 1411 and a fourth lead back surface 1412. The fourth lead main surface 1411 is the surface facing the z1 side in the thickness direction z. The fourth lead back surface 1412 is the surface facing the z2 side in the thickness direction z. A connecting member 33 is connected to the fourth lead main surface 1411. The shape of the pad portion 141 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the thickness direction z. Also, when viewed in the thickness direction z, the pad portion 141 is smaller than the pad portion 121. Also, the size of the pad portion 141 in the thickness direction z is the same as (or approximately the same as) the first joint portion 111, pad portion 121, and pad portion 131. In the illustrated example, the position of the fourth lead main surface 1411 in the thickness direction z is located on the z1 side in the thickness direction z than the first lead main surface 1111 of the first joint portion 111. Furthermore, the fourth lead main surface 1411 is located at the same (or approximately the same) position in the thickness direction z as the second lead main surface 1211 of the pad portion 121 and the third lead main surface 1311 of the pad portion 131.

[0035] The fourth terminal portion 142 has a tenth portion 1421, an eleventh portion 1422, and a twelfth portion 1423.

[0036] The tenth section 1421 is connected to the pad section 141 and extends from the pad section 141 toward the x2 side in the first direction x, and in the illustrated example it is parallel to the xy plane. The shape of the tenth section 1421 is not limited in any way, and in the illustrated example it is rectangular when viewed in the thickness direction z.

[0037] The 11th part 1422 is located on the z1 side in the thickness direction z relative to the 10th part 1421. The 11th part 1422 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The 11th part 1422 has a shape that extends along the first direction x.

[0038] The twelfth section 1423 is interposed between the tenth section 1421 and the eleventh section 1422. The twelfth section 1423 extends from the tenth section 1421 towards the z1 side in the thickness direction z. In the illustrated example, the twelfth section 1423 is inclined with respect to the thickness direction z (yz plane). The shape of the twelfth section 1423 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the first direction x.

[0039] The insulating substrate 50 is located on the z2 side in the thickness direction z with respect to the first joint portion 111 of the first lead 11. In this embodiment, the insulating substrate 50 is made of, for example, a DBC (Direct Bonded Copper) substrate. As shown in Figures 13 to 18, the insulating substrate 50 includes an insulating layer 51, a first metal layer 52, and a second metal layer 53. The insulating substrate 50 is covered with a sealing resin 40, except for a part of the second metal layer 53. The insulating substrate 50 is rectangular in shape when viewed in the thickness direction z.

[0040] The insulating layer 51 includes a portion interposed between the first metal layer 52 and the second metal layer 53 in the thickness direction z. The insulating layer 51 is made of a material with relatively high thermal conductivity. The insulating layer 51 is made of ceramics, for example, aluminum nitride (AlN). In addition to ceramics, the insulating layer 51 may also be made of an insulating resin sheet. The insulating layer 51 is rectangular in shape when viewed in the thickness direction z.

[0041] The first metal layer 52 is laminated on the z1 side in the thickness direction z relative to the insulating layer 51. The composition of the first metal layer 52 includes copper (Cu). The first metal layer 52 is rectangular when viewed in the thickness direction z. In the illustrated example, the periphery of the first metal layer 52 overlaps with the periphery of the insulating layer 51 when viewed in the thickness direction z. However, unlike the illustrated example, the first metal layer 52 may be surrounded by the periphery of the insulating layer 51 when viewed in the thickness direction z. The first metal layer 52 is conductively bonded to the back surface 1112 of the first lead of the first joint 111 via a conductive bonding material 19. The conductive bonding material 19 is, for example, solder. In addition, the conductive bonding material 19 may be silver (Ag) paste, calcined silver, etc.

[0042] The second metal layer 53 is laminated on the z2 side of the thickness direction z relative to the insulating layer 51. The composition of the second metal layer 53 includes copper. The second metal layer 53 is rectangular when viewed in the thickness direction z. In the illustrated example, the periphery of the second metal layer 53 overlaps with the periphery of the insulating layer 51 when viewed in the thickness direction z. However, unlike the illustrated example, the second metal layer 53 may be surrounded by the periphery of the insulating layer 51 when viewed in the thickness direction z.

[0043] The heat sink 60 is located on the z2 side in the thickness direction z relative to the insulating substrate 50 (second metal layer 53). The heat sink 60 is made of a material with high thermal conductivity. For example, the heat sink 60 is made of a metal plate containing copper in its composition. The heat sink 60 is rectangular in shape when viewed in the thickness direction z. The heat sink 60 has a main surface 601 and a back surface 602. The main surface 601 is the surface facing the z1 side in the thickness direction z. The back surface 602 is the surface facing the z2 side in the thickness direction z. The main surface 601 is joined to the second metal layer 53 of the insulating substrate 50 via a bonding material 59. The bonding material 59 may be conductive or insulating, but for example, solder is used. The back surface 602 is exposed from the second resin surface 42 of the sealing resin 40, which will be described later. The back surface 602 of the heat sink is surrounded by the second resin surface 42 when viewed in the thickness direction z. As shown in Figures 5, 13 to 16, etc., the insulating substrate 50 extends further in the first direction x towards x1 than the heat sink 60 when viewed in the thickness direction z.

[0044] As shown in FIGS. 5 and 13 to 17, the semiconductor element 20 is mounted on the z1 side in the thickness direction z of the insulating substrate 50 (first metal layer 52). The semiconductor device A10 is separated from the first joint portion 111 of the first lead 11 on the x2 side in the first direction x. In the semiconductor device A10, the semiconductor element 20 is a switching element, more specifically, an n-channel type and a vertical structure MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Note that the semiconductor element 20 is not limited to a MOSFET. The semiconductor element 20 may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor). Further, the semiconductor element 20 may be a diode. The semiconductor element 20 is rectangular when viewed in the thickness direction z. The semiconductor element 20 includes a semiconductor layer 205, a first electrode 201, a second electrode 202, and a third electrode 203.

[0045] The semiconductor layer 205 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). In addition, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0046] The first electrode 201 is provided on the portion of the semiconductor layer 205 on the side (z1 side) where the first lead main surface 1111 of the first joint portion 111 of the first lead 11 faces in the thickness direction z. The first electrode 201 corresponds to the source electrode of the semiconductor element 20 in the present disclosure.

[0047] The second electrode 202 is provided at a portion of the semiconductor layer 205 on the side opposite to the first electrode 201 in the thickness direction z (the z2 side in the thickness direction z). The second electrode 202 faces the surface of the insulating substrate 50 (the first metal layer 52) facing the z1 side in the thickness direction z. The second electrode 202 corresponds to the drain electrode of the semiconductor device 20 in the present disclosure. In the present embodiment, the second electrode 202 is electrically joined to the first metal layer 52 via the conductive joining material 29. Also, the second electrode 202 is electrically connected to the first lead 11 (the first joint portion 111) via the conductive joining material 29, the first metal layer 52, and the conductive joining material 19. The conductive joining material 29 is, for example, solder. Alternatively, the conductive joining material 29 may be silver paste, fired silver, or the like.

[0048] The third electrode 203 is provided at a portion of the semiconductor layer 205 on the same side as the first electrode 201 in the thickness direction z (the z1 side in the thickness direction z) and is located away from the first electrode 201. The third electrode 203 corresponds to the gate electrode of the semiconductor device 20 in the present disclosure. When viewed in the thickness direction z, the area of the third electrode 203 is smaller than the area of the first electrode 201.

[0049] The connecting member 31 is joined to the first electrode 201 of the semiconductor device 20 and the second lead main surface 1211 of the pad portion 121 of the second lead 12. The connecting member 31 is constituted by, for example, a metal plate material. The constituent material of the connecting member 31 contains, for example, Cu (copper). The connecting member 31 is a metal plate material appropriately bent. In the illustrated example, the connecting member 31 is a fixed-length Cu clip (metal clip). The connecting member 31 extends in the first direction x as the longitudinal direction.

[0050] The connecting member 31 has a joint portion 311 and a joint portion 312. The joint portion 311 is joined to the first electrode 201 (source electrode) via a conductive bonding material 39, and is the portion that conductively joins the connecting member 31 to the first electrode 201. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the joint portion 311 is located at the x1 side end of the connecting member 31 in the first direction x. The joint portion 312 is joined to the pad portion 121 of the second lead 12 via a conductive bonding material 39, and is the portion that conductively joins the connecting member 31 to the second lead 12. The conductive bonding material 39 is, for example, solder, Ag (silver) paste, etc. In the illustrated example, the joint portion 312 is located at the x2 side end of the connecting member 31 in the first direction x.

[0051] The connecting member 32 connects the third electrode 203 of the semiconductor element 20 to the main surface 1311 of the pad portion 131 of the third lead 13. The material of the connecting member 32 is not limited and includes metals such as aluminum (Al), copper (Cu), and gold (Au). In the illustrated example, the connecting member 32 is made of gold (Au) and is a linear member.

[0052] The connecting member 33 is connected to the first electrode 201 of the semiconductor element 20 and the main surface 1411 of the pad portion 141 of the fourth lead 14. In the illustrated example, the connecting member 33 is a linear member containing gold (Au).

[0053] In this embodiment, the first terminal portion 112 of the first lead 11 is the drain terminal, the second terminal portion 122 of the second lead 12 is the source terminal, the third terminal portion 132 of the third lead 13 is the gate terminal, and the fourth terminal portion 142 of the fourth lead 14 is the source sense terminal.

[0054] As shown in Figures 1 to 18, the sealing resin 40 covers the semiconductor element 20, the connecting members 31, 32, 33 and the insulating substrate 50, as well as a portion of the first lead 11, the second lead 12, the third lead 13, the fourth lead 14 and the heat sink 60. The sealing resin 40 has electrical insulating properties. The sealing resin 40 is made of a material including, for example, black epoxy resin. The sealing resin 40 has a first resin surface 41, a second resin surface 42, a third resin surface 43, a fourth resin surface 44, a fifth resin surface 45, a sixth resin surface 46, a resin protrusion 48 and a stepped portion 49.

[0055] The first resin surface 41 faces the same side (z1 side) as the first lead main surface 1111 of the first joint portion 111 of the first lead 11 in the thickness direction z. The second resin surface 42 faces the opposite side (z2 side) from the first resin surface 41 in the thickness direction z. The back surface 602 of the heat sink 60 is exposed from the second resin surface 42. The second resin surface 42 and the back surface 602 of the heat sink are flush with each other. The back surface 602 of the heat sink is separated from the third resin surface 43 and the fourth resin surface 44 in the first direction x. The second resin surface 42 is annular and surrounds the back surface 602 of the heat sink.

[0056] The third resin surface 43 faces the x1 side in the first direction x. In the illustrated example, the third resin surface 43 includes a portion that is inclined with respect to the thickness direction z. The first part 1121 of the first terminal portion 112 of the first lead 11 extends from the third resin surface 43 to the x1 side in the first direction x when viewed in the thickness direction z. Also, the first part 1121 (first terminal portion 112) is separated from the second resin surface 42 in the thickness direction z.

[0057] The fourth resin surface 44 faces the opposite side of the third resin surface 43 in the first direction x (the x2 side of the first direction x). In the illustrated example, the fourth resin surface 44 includes a portion that is inclined with respect to the thickness direction z. In this embodiment, the second terminal portions 122 of the multiple second terminal portions 122 of the second lead 12, the seventh portion 1321 of the third terminal portion 132 of the third lead 13, and the tenth portion 1421 of the fourth terminal portion 142 of the fourth lead 14 penetrate the fourth resin surface 44.

[0058] The fifth resin surface 45 and the sixth resin surface 46 are surfaces facing opposite directions in the second direction y. The fifth resin surface 45 faces the y1 side in the second direction y. The sixth resin surface 46 faces the opposite side from the fifth resin surface 45 in the second direction y (the y2 side in the second direction y). In the illustrated example, each of the fifth resin surface 45 and the sixth resin surface 46 includes a portion that is inclined with respect to the thickness direction z.

[0059] The resin projection 48 is a portion that protrudes from the third resin surface 43 towards the x1 side in the first direction x when viewed in the thickness direction z. The resin projection 48 is located in the center of the third resin surface 43 in the second direction y and on the z1 side in the thickness direction z. The resin projection 48 is in the shape of a roughly rectangular block. The resin projection 48 has a shape that extends with the second direction y as its longitudinal direction, and its cross-section perpendicular to the second direction y is square.

[0060] The resin projection 48 has a first side surface 481, a second side surface 482, and a projection top surface 483. The first side surface 481 is the surface facing the y1 side of the second direction y. The second side surface 482 is the surface facing the y2 side of the second direction y. The projection top surface 483 is the surface facing the z2 side of the thickness direction z.

[0061] The resin projection 48 covers at least a portion of the first part 1121 of the first terminal part 112 on the first lead 11. In this embodiment, the resin projection 48 covers the entire first part 1121. In this embodiment, the two second parts 1122 (connecting parts 1122a) of the first terminal part 112 penetrate the surface of the resin projection 48 facing the second direction y (first side surface 481 and second side surface 482) and extend to both sides of the second direction y (y1 side and y2 side).

[0062] The stepped portion 49 is a portion that is displaced from the third resin surface 43 in the first direction x. The stepped portion 49 is located between the first terminal portion 112 and the second resin surface 42 in the thickness direction z. In the illustrated example, the stepped portion 49 is composed of a recess 491. The recess 491 is recessed from the third resin surface 43 on the x2 side of the first direction x. In this embodiment, the recess 491 is recessed from the third resin surface 43 and the second resin surface 42 in the thickness direction z and the first direction x, and extends along the second direction y. The recess 491 extends along the second direction y. The recess 491 reaches the fifth resin surface 45 and the sixth resin surface 46.

[0063] The recess 491 has a first surface 4911 and a second surface 4912. The first surface 4911 connects to the third resin surface 43 and faces the z2 side in the thickness direction z. The second surface 4912 connects to the first surface 4911 and is located on the z2 side in the thickness direction z relative to the first surface 4911. The second surface 4912 faces the x1 side in the first direction x. In this embodiment, the second surface 4912 connects to the second resin surface 42. In this embodiment, the insulating substrate 50 overlaps with the recess 491 when viewed in the thickness direction z.

[0064] Next, an example of the use of semiconductor device A10 will be described based on Figures 19 and 20.

[0065] Figure 19 shows the semiconductor device A10 in use. In this example, a semiconductor device assembly B10 is shown, comprising the semiconductor device A10 and a heat sink 91 integrally attached to the z2 side in the thickness direction z of the semiconductor device A10. The heat sink 91 is positioned opposite the back surface 602 of the heat sink 60 of the semiconductor device A10. The material of the heat sink 91 includes, for example, aluminum. The material is not limited to aluminum, but may be other metal materials or resin materials (preferably those with good thermal conductivity), etc. The heat sink 91 is an example of a "heat dissipation member" in this disclosure.

[0066] The semiconductor device A10 (heat sink 60) is fixed to the heat sink 91 by fastening means (not shown). As shown in Figure 19, when the semiconductor device A10 is attached to the heat sink 91, the back surface 602 of the heat sink 60 and the surface of the heat sink 91 facing z1 in the thickness direction z are in surface contact. A sheet-like thermal interface material (TIM) may be placed between the back surface 602 of the heat sink and the heat sink 91.

[0067] Furthermore, in the example of use shown in Figure 19, the semiconductor device A10 is surface-mounted on the circuit board 92. Specifically, the second part 1122 (mounting part 1122c) of the first terminal part 112, the fifth part 1222 of the second terminal part 122, the eighth part 1322 of the third terminal part 132, and the eleventh part 1422 of the fourth terminal part 142 are electrically bonded to the wiring pattern (not shown) of the circuit board 92, for example, by solder 921.

[0068] Figure 20 is a schematic diagram of a vehicle C1 on which a semiconductor device A10 is mounted. Vehicle C1 is, for example, an electric vehicle (EV). As shown in Figure 20, vehicle C1 is equipped with an AC-DC converter 81, a power receiving device 82, a storage battery 83, and a drive system 84. The semiconductor device A10 constitutes a part of the AC-DC converter 81. When vehicle C1 is supplied with AC power from a charging facility 80, which is an AC power source installed outdoors, etc., the AC-DC converter 81 converts it into high-voltage DC power. The AC-DC converter 81 supplies the high-voltage DC power to the storage battery 83. The power receiving device 82 supplies power to the storage battery 83 by a contactless charging system, and power is supplied by electromagnetic induction from a contactless charger (not shown) installed in a parking lot, etc. The power stored in the storage battery 83 is supplied to a drive system 84, which consists of an inverter, an AC motor, and a transmission. The drive system 84 drives vehicle C1. The AC-DC converter 81 described above is an example of a "power converter" as described in this disclosure.

[0069] Next, the operation of semiconductor device A10 will be explained.

[0070] The semiconductor device A10 comprises a semiconductor element 20, a first lead 11, an insulating substrate 50, and a sealing resin 40. The first lead 11 includes a first junction 111 and a first terminal 112, and is electrically connected to the semiconductor element 20. The first junction 111 has a first lead main surface 1111 facing the z1 side in the thickness direction z and a first lead back surface 1112 facing the z2 side in the thickness direction z. The insulating substrate 50 is located on the z2 side in the thickness direction z relative to the first junction 111 and is bonded to the first lead back surface 1112 of the first junction 111. This ensures insulation between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A10 and the semiconductor element 20. The first terminal portion 112 includes a portion located on the third resin surface 43 that is on the x1 side of the first direction x relative to the third resin surface 43, and at least a part of it is exposed from the sealing resin 40. The sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. The stepped portion 49 is located between the first terminal portion 112 and the second resin surface 42 in the thickness direction z. With this configuration in which the sealing resin 40 has a stepped portion 49, as shown in Figure 19, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 19), which is the shortest distance along the surface of the sealing resin 40 connecting the heat sink 91 integrally attached to the z2 side of the thickness direction z of the semiconductor device A10 and the portion in which the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed in the semiconductor device A10 can be prevented.

[0071] The sealing resin 40 has a resin projection 48. The resin projection 48 is a portion that protrudes from the third resin surface 43 toward the x1 side in the first direction x. The resin projection 48 covers at least a part of the first portion 1121 of the first terminal portion 112 on the first lead 11. With this configuration, the creepage distance Dc between the heat sink 91 and the first terminal portion 112 can be made larger. This is preferable in preventing creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed. In this embodiment, the resin projection 48 covers the entire first portion 1121. This makes it possible to secure a larger creepage distance Dc between the heat sink 91 and the first terminal portion 112, and to more effectively prevent creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed.

[0072] The semiconductor device A10 includes a heat sink 60 located on the z2 side in the thickness direction z relative to the insulating substrate 50. The main surface 601 of the heat sink 60 is bonded to the insulating substrate 50. The back surface 602 of the heat sink 60 faces the z2 side in the thickness direction z and is exposed from the second resin surface 42 of the sealing resin 40. With this configuration, the heat generated in the semiconductor device A10 (semiconductor element 20) can be efficiently dissipated to the heat sink 91 which is positioned opposite the back surface 602 of the heat sink. This improves the heat dissipation performance of the semiconductor device A10.

[0073] The insulating substrate 50 extends further than the heat sink 60 towards the x1 side in the first direction x. Viewed in the thickness direction z, the insulating substrate 50 overlaps with the recess 491 (step portion 49) of the sealing resin 40. With this configuration, the planar size of the insulating substrate 50 can be increased, and the size of the semiconductor element 20 mounted on the insulating substrate 50 can be increased. As a result, the semiconductor device A10 can be operated at a higher voltage. In the semiconductor device A10, even when a high voltage is applied, as described above, a large creepage distance Dc is secured between the heat sink 91 and the first terminal portion 112, so creepage discharge between the first terminal portion 112 and the heat sink 91 can be prevented. As a result, the semiconductor device A10 of this embodiment can be made to have a high voltage resistance.

[0074] Figures 21 to 43 show modified and other embodiments of the semiconductor device of the present disclosure. In these figures, elements identical or similar to those in the above embodiments are denoted by the same reference numerals, and redundant explanations are omitted. Furthermore, the configurations of each part in each modified and embodiment can be appropriately combined with each other to the extent that no technical inconsistencies arise.

[0075] First Modification: Figures 21 and 22 show a first modification of semiconductor device A10. Figure 21 is a perspective view showing semiconductor device A11 according to the first modification. Figure 22 is a cross-sectional view of semiconductor device A11, showing the same cross-section as in Figure 14. In this modification, semiconductor device A11 differs from semiconductor device A10 in the configuration of the stepped portion 49 (recess 491) in the sealing resin 40.

[0076] In the semiconductor device A11, the recess 491 has a third surface 4913 and a fourth surface 4914 in addition to the first surface 4911 and the second surface 4912 described above. The third surface 4913 connects to the second surface 4912 and faces the z2 side in the thickness direction z. The fourth surface 4914 connects to the third surface 4913 and is located on the z2 side in the thickness direction z relative to the third surface 4913. The fourth surface 4914 faces the x1 side in the first direction x. In this modified example, the fourth surface 4914 connects to the second resin surface 42. In this modified example, the insulating substrate 50 overlaps with the recess 491 (third surface 4913 and fourth surface 4914) when viewed in the thickness direction z. Also, the insulating substrate 50 overlaps with the recess 491 (first surface 4911 and second surface 4912) when viewed in the first direction x.

[0077] In Figure 22, a heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A11 is shown by a dashed line (two-dotted line). In this modified example as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A11 and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. With the configuration in which the sealing resin 40 has a stepped portion 49, as shown in Figure 22, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 22), which is the shortest distance along the surface of the sealing resin 40 connecting the heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A11 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the enclosed heat sink 91 can be prevented in the semiconductor device A11. In addition, semiconductor device A11 provides the same effects and advantages as semiconductor device A10 in the above embodiment.

[0078] Second Modification: Figure 23 shows a second modification of semiconductor device A10. Figure 23 is a cross-sectional view showing semiconductor device A12 according to the second modification, and represents the same cross-section as in Figure 14. In this modification, semiconductor device A12 differs from semiconductor device A10 in the configuration of the stepped portion 49 in the sealing resin 40.

[0079] In semiconductor device A12, the stepped portion 49 is configured to include a protrusion 492. The protrusion 492 protrudes from the third resin surface 43 toward the x1 side in the first direction x. The protrusion 492 extends along the second direction y. In this modified example, the protrusion 492 reaches the fifth resin surface 45 and the sixth resin surface 46.

[0080] Furthermore, in semiconductor device A12, the insulating substrate 50 and the heat sink 60 are each extended towards the x1 side in the first direction x compared to semiconductor device A10 in the above embodiment, and the length on the x1 side in the first direction x is increased. The insulating substrate 50 overlaps with the protrusion 492 in the thickness direction z.

[0081] In Figure 23, a heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A12 is shown by a dashed line (two-dotted line). In this modified example as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A12 and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (protrusion 492) that is displaced from the third resin surface 43 in the first direction x. With the configuration in which the sealing resin 40 has a stepped portion 49, as shown in Figure 23, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 23), which is the shortest distance along the surface of the sealing resin 40 connecting the heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A12 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed in the semiconductor device A12 can be prevented. Furthermore, in semiconductor device A12, the length of the insulating substrate 50 and the heat sink 60 in the first direction x is increased. With this configuration, semiconductor device A12 can achieve higher heat dissipation and even higher voltage resistance. In addition, semiconductor device A12 has the same effects as semiconductor device A10 in the above embodiment.

[0082] Third Modification: Figures 24 to 26 show a third modification of semiconductor device A10. Figure 24 is a perspective view showing semiconductor device A13 according to the third modification. Figure 25 is a plan view of semiconductor device A13. Figure 26 is a cross-sectional view along the line XXVI-XXVI in Figure 25. In this modification, semiconductor device A13 differs from semiconductor device A10 in the configuration of the resin protrusions 48 in the sealing resin 40.

[0083] In semiconductor device A13, the length of the resin projection 48 protruding from the third resin surface 43 towards the x1 side in the first direction x is smaller than that of semiconductor device A10. As a result, the resin projection 48 covers a portion of the first part 1121 of the first terminal portion 112 of the first lead 11. The other portion of the first part 1121 is exposed from the resin projection 48 (sealing resin 40).

[0084] In Figure 26, a heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A13 is shown by a dashed line (two-dotted line). In this modified example as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A13 and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. With the configuration in which the sealing resin 40 has a stepped portion 49, as shown in Figure 26, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 26), which is the shortest distance along the surface of the sealing resin 40 connecting the heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A13 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed in the semiconductor device A13 can be prevented. Furthermore, semiconductor device A13 provides the same effects and advantages as semiconductor device A10 in the above embodiment, within the same range of configuration as semiconductor device A10 in the above embodiment.

[0085] Second Embodiment: Figures 27 and 28 show a semiconductor device according to the second embodiment of the present disclosure. Figure 27 is a bottom view of the main part of the semiconductor device A20 according to this embodiment. In Figure 27, the outer shape of the sealing resin 40 is shown by dashed lines. Figure 28 is a cross-sectional view along the line XXVIII-XXVIII in Figure 27. The semiconductor device A20 of this embodiment differs from the semiconductor device A10 in the configuration of the insulating substrate 50, the configuration of the first lead 11, the configuration of the stepped portion 49 (recess 491) in the sealing resin 40, and the arrangement of the semiconductor elements 20.

[0086] In semiconductor device A20, the insulating substrate 50 consists of a single insulating substrate, such as a ceramic substrate. The first joint portion 111 of the first lead 11 has a size in the thickness direction z that is larger than the first joint portion 111 of semiconductor device A10. The surface of the insulating substrate 50 facing z2 in the thickness direction z is joined to the main surface 601 of the heat sink 60 via a bonding material 59. The surface of the insulating substrate 50 facing z1 in the thickness direction z is joined to the back surface 1112 of the first lead of the first joint portion 111 via a bonding material 18. The bonding materials 59 and 18 may be conductive or insulating, but solder is used as an example.

[0087] In semiconductor device A20, the semiconductor element 20 is mounted on the first lead main surface 1111 of the first junction 111. The second electrode 202 of the semiconductor element 20 is conductively bonded to the first lead main surface 1111 via a conductive bonding material 29.

[0088] In semiconductor device A20, the heat sink 60 overlaps with the entire insulating substrate 50 when viewed in the thickness direction z, and surrounds the insulating substrate 50 when viewed in the thickness direction z. As a result, in this embodiment, the heat sink 60 extends beyond the insulating substrate 50 in the first direction x towards x1 when viewed in the thickness direction z.

[0089] In the semiconductor device A20, the recess 491 is groove-shaped, recessed from the third resin surface 43 towards the z2 side in the thickness direction z, and extends along the second direction y. The groove-shaped recess 491 is located midway along the thickness direction z of the third resin surface 43 and reaches the fifth resin surface 45 and the sixth resin surface 46. In the illustrated example, the insulating substrate 50 overlaps with the recess 491 when viewed in the first direction x. Also, the heat sink 60 overlaps with the recess 491 when viewed in the thickness direction z.

[0090] In Figure 28, a heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A20 is shown by a dashed line (two-dotted line). In this embodiment as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A20 and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. With the configuration in which the sealing resin 40 has a stepped portion 49, as shown in Figure 28, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 28), which is the shortest distance along the surface of the sealing resin 40 connecting the heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A20 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed in the semiconductor device A20 can be prevented. Furthermore, within the same configuration range as semiconductor device A10 of the above embodiment, semiconductor device A20 provides the same effects and advantages as semiconductor device A10 of the above embodiment.

[0091] Third Embodiment: Figures 29 and 30 show a semiconductor device according to the third embodiment of the present disclosure. Figure 29 is a bottom view of the main part of the semiconductor device A30 according to this embodiment. In Figure 29, the outer shape of the sealing resin 40 is shown by dashed lines. Figure 30 is a cross-sectional view along the line XXX-XXX in Figure 29. The semiconductor device A30 of this embodiment does not include the connecting members 31, 32, and 33 described above.

[0092] In semiconductor device A30, the back surface 1212 of the pad portion 121 of the second lead 12 is conductively bonded to the first electrode 201 of the semiconductor element 20. Also, the back surface 1312 of the pad portion 131 of the third lead 13 is conductively bonded to the third electrode 203 of the semiconductor element 20. Furthermore, the back surface 1412 of the pad portion 141 of the fourth lead 14 is conductively bonded to the first electrode 201 of the semiconductor element 20.

[0093] In Figure 30, a heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A30 is shown by a dashed line (two-dotted line). In this embodiment as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A30 and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. With the configuration in which the sealing resin 40 has a stepped portion 49, as shown in Figure 30, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 30), which is the shortest distance along the surface of the sealing resin 40 connecting the heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A30 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed in the semiconductor device A30 can be prevented. In addition, semiconductor device A30 provides the same effects and advantages as semiconductor device A10 in the above embodiment.

[0094] Fourth Embodiment: Figures 31 and 32 show a semiconductor device according to the fourth embodiment of the present disclosure. Figure 31 is a perspective view showing a semiconductor device A40 according to this embodiment. Figure 32 is a cross-sectional view of the semiconductor device A40, showing the same cross-section as in Figure 14. The semiconductor device A40 of this embodiment does not include the heat sink 60 described above.

[0095] In semiconductor device A40, the surface of the insulating substrate 50 (second metal layer 53) facing z2 in the thickness direction z is exposed from the second resin surface 42. The periphery of the insulating substrate 50 (second metal layer 53) is surrounded by the second resin surface 42 when viewed in the thickness direction z. The second resin surface 42 and the surface of the insulating substrate 50 (second metal layer 53) facing z2 in the thickness direction z are flush with each other.

[0096] In Figure 32, a heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A40 is shown by a dashed line (two-dotted line). In this embodiment as well, insulation is ensured between the heat dissipation surface of the sealing resin 40 facing the z2 side in the thickness direction z (the surface of the insulating substrate 50 facing the z2 side in the thickness direction z) and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. With the configuration in which the sealing resin 40 has a stepped portion 49, as shown in Figure 32, it is possible to secure a large creepage distance Dc (see thick dotted line in Figure 32), which is the shortest distance along the surface of the sealing resin 40 connecting the heat sink 91 that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A40 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink 91 that is enclosed in the semiconductor device A40 can be prevented. Furthermore, semiconductor device A40 provides the same effects and advantages as semiconductor device A10 in the above embodiment, within the same range of configuration as semiconductor device A10 in the above embodiment.

[0097] Fifth Embodiment: Figures 33 to 38 show a semiconductor device according to the fifth embodiment of the present disclosure. Figures 33 and 34 are perspective views showing the semiconductor device A50 according to this embodiment. Figure 35 is a plan view showing the semiconductor device A50. Figure 36 is a front view showing the semiconductor device A50. Figure 37 is a rear view showing the semiconductor device A50. Figure 38 is a partially enlarged view of Figure 33. The configuration of the resin protrusion 48 of the semiconductor device A50 in this embodiment differs from that of the semiconductor device A10.

[0098] In the semiconductor device A50, the resin protrusion 48 further has a first protrusion 4811 and a second protrusion 4821. The first protrusion 4811 projects from the first side surface 481 toward the y1 side in the second direction y. In the first direction x, the first protrusion 4811 is located between one of the two second parts 1122 (the second part 1122 extending from the first side surface 481 toward the y1 side in the second direction y) and the third resin surface 43. The first protrusion 4811 includes a portion located toward the z2 side in the thickness direction z than the second part 1122. In this embodiment, the first protrusion 4811 is a rectangular prism shape extending along the thickness direction z and is adjacent to the first side surface 481 and the third resin surface 43. The first protrusion 4811 reaches the top surface 483 of the protrusion and the bottom surface 484 of the resin protrusion 48, which faces the z1 side in the thickness direction z, in the thickness direction z.

[0099] The second protrusion 4821 projects from the second side surface 482 toward the y2 side in the second direction y. In the first direction x, the second protrusion 4821 is located between the other of the two second parts 1122 (the second part 1122 extending from the second side surface 482 toward the y2 side in the second direction y) and the third resin surface 43. The second protrusion 4821 includes a portion located toward the z2 side in the thickness direction z than the second part 1122. In this embodiment, the second protrusion 4821 is a rectangular prism shape extending along the thickness direction z and is adjacent to the second side surface 482 and the third resin surface 43. In the thickness direction z, the second protrusion 4821 reaches the top surface 483 and the bottom surface 484 of the protrusion.

[0100] In this embodiment as well, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A50 and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. With the sealing resin 40 having a stepped portion 49, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 38), which is the shortest distance along the surface of the sealing resin 40 connecting a heat sink (not shown) that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A50 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink that is enclosed in the semiconductor device A50 can be prevented.

[0101] In semiconductor device A50, the resin protrusion 48 has the first protrusion 4811 and the second protrusion 4821 described above. With this configuration, it is possible to make the creepage distance Dc larger compared to a configuration without the first protrusion 4811 and the second protrusion 4821. In Figure 38, the portion corresponding to the creepage distance when the first protrusion 4811 is not present is shown by a dashed line. In addition, semiconductor device A50 has the same effects as semiconductor device A10 of the above embodiment.

[0102] First Modification: Figures 39 to 43 show a first modification of semiconductor device A50. Figures 39 and 40 are perspective views showing semiconductor device A51 according to the first modification. Figure 41 is a front view showing semiconductor device A51. Figure 42 is a rear view showing semiconductor device A51. Figure 43 is a partially enlarged view of Figure 39. The configuration of the resin protrusion 48 in this modification of semiconductor device A51 differs from that of semiconductor device A10.

[0103] In the semiconductor device A51, the resin projection 48 further has a first recess 4812 and a second recess 4822. The first recess 4812 is recessed from the first side surface 481 toward the y2 side in the second direction y. In the first direction x, the first recess 4812 is located between one of the two second parts 1122 (the second part 1122 extending from the first side surface 481 toward the y1 side in the second direction y) and the third resin surface 43. The first recess 4812 includes a portion located toward the z2 side in the thickness direction z than the second part 1122. In this embodiment, the first recess 4812 is recessed from the projection top surface 483 and the first side surface 481 toward the z1 side in the thickness direction z and the y2 side in the second direction y, and extends along the first direction x. The first recess 4812 reaches the third resin surface 43 in the first direction x.

[0104] The second recess 4822 is recessed from the second side surface 482 toward the y1 side in the second direction y. In the first direction x, the second recess 4822 is located between the other of the two second parts 1122 (the second part 1122 extending from the second side surface 482 toward the y2 side in the second direction y) and the third resin surface 43. The second recess 4822 includes a portion located toward the z2 side in the thickness direction z than the second part 1122. In this embodiment, the second recess 4822 is recessed from the top surface 483 and the second side surface 482 toward the z1 side in the thickness direction z and the y1 side in the second direction y, and extends along the first direction x. The second recess 4822 reaches the third resin surface 43 in the first direction x.

[0105] In this modified example, insulation is ensured between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the z2 side in the thickness direction z of the semiconductor device A51 and the semiconductor element 20, and the sealing resin 40 has a stepped portion 49 (recess 491) that is displaced from the third resin surface 43 in the first direction x. With the sealing resin 40 having a stepped portion 49, it is possible to secure a large creepage distance Dc (see the thick dotted line in Figure 43), which is the shortest distance along the surface of the sealing resin 40 connecting a heat sink (not shown) that can be integrally attached to the z2 side in the thickness direction z of the semiconductor device A51 and the location where the first terminal portion 112 protrudes from the sealing resin 40. As a result, creepage discharge between the first terminal portion 112 and the heat sink that is enclosed in the semiconductor device A51 can be prevented.

[0106] In semiconductor device A51, the resin projection 48 has the first recess 4812 and the second recess 4822 described above. With this configuration, it is possible to make the creepage distance Dc larger compared to a configuration without the first recess 4812 and the second recess 4822. In Figure 43, the portion corresponding to the creepage distance when the first recess 4812 is not present is shown by a dashed line. In addition, semiconductor device A51 has the same effects and advantages as semiconductor device A10 of the above embodiment.

[0107] Each component illustrated and described in the embodiments does not necessarily need to be provided simultaneously in light of the technical concept of the present invention, and a person skilled in the art can appropriately select, delete, substitute, or combine them to the extent that it does not create a technical contradiction.

[0108] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways. The package structure of the semiconductor device relating to this disclosure is not limited to the structure shown in semiconductor device A10, etc., of the above embodiments, and this disclosure is applicable to various package structures.

[0109] This disclosure includes the following configuration: The semiconductor element (20) and the first joint (111) and the insulating substrate (50) are covered by a sealing resin (40), the first terminal portion (112) includes a portion located on one side (x1 side) of the first direction (x) in the first direction (x) relative to the third resin surface (43), and the insulating substrate (50) is located on the other side (z2 side) of the thickness direction (z) relative to the first joint (111), and the first terminal portion (112) includes a portion located on one side (x1 side) of the first direction (x) relative to the third resin surface (43) in the first direction (x), and at least a portion of it is exposed from the sealing resin (40), the insulating substrate (50) is located on the other side (z2 side) of the thickness direction (z) relative to the first joint (111) and is joined to the back surface of the first lead (1112). The sealing resin (40) has a stepped portion (49) that is displaced from the third resin surface (43) in the first direction (x), and the stepped portion (49) is located between the first terminal portion (112) and the second resin surface (42) in the thickness direction (z), as described in the semiconductor device (A10, A11, A12, A13, A20, A30, A40, A50, A51). Note 2. The stepped portion (49) includes a recess (491) that is recessed on the other side (x2 side) of the first direction (x) from the third resin surface (43), and the recess (491) extends along the thickness direction (z) and a second direction (y) perpendicular to the first direction (x), as described in Note 1, as described in the semiconductor device (A10, A11, A13, A20, A30, A40, A50, A51). Note 3. The recess (491) is recessed from the third resin surface (43) and the second resin surface (42) and is a semiconductor device described in Appendix 2 (A10, A11, A13, A30, A40, A50, A51).Note 4. The semiconductor device (A10, A11, A13, A30, A40, A50, A51) described in Note 3, wherein the recess (491) has a first surface (4911) connected to the third resin surface (43) and facing the other side (z2 side) of the thickness direction (z), and a second surface (4912) connected to the first surface (4911) and located on the other side (z2 side) of the thickness direction (z) with respect to the first surface (4911), and facing one side (x1 side) of the first direction (x). Note 5. The semiconductor device (A11) according to Appendix 4, wherein the recess (491) has a third surface (4913) that connects to the second surface (4912) and faces the other side (z2 side) in the thickness direction (z), and a fourth surface (4914) that connects to the third surface (4913) and is located on the other side (z2 side) in the thickness direction (z) relative to the third surface (4913) and faces one side (x1 side) in the first direction (x). Appendix 6. The semiconductor device (A20) according to Appendix 2, wherein the recess (491) is groove-shaped and located in the middle of the third resin surface (43) in the thickness direction (z). Appendix 7. The sealing resin (40) has a fourth resin surface (44) facing the other side (x2 side) of the first direction (x), a fifth resin surface (45) facing one side (y1 side) of the second direction (y), and a sixth resin surface (46) facing the other side (y2 side) of the second direction (y), and the recess (491) reaches the fifth resin surface (45) and the sixth resin surface (46), and is a semiconductor device (A10, A11, A13, A20, A30, A40, A50, A51) as described in any of Appendix 2 to 6. Appendix 8. The stepped portion (49) includes a protrusion (492) that protrudes from the third resin surface (43) to one side (x1 side) in the first direction (x), and the protrusion (492) extends along the thickness direction (z) and a second direction (y) perpendicular to the first direction (x), the semiconductor device (A12) as described in Appendix 1.Note 9. The semiconductor device (A10, A11, A12, A13, A20, A30, A40, A50, A51) described in any of Notes 1 to 8, having a first terminal portion (112) which extends from the third resin surface (43) in the first direction (x) to one side (x1 side) of the first direction when viewed in the thickness direction (z), and a second portion (1122) which includes a portion located on one side (z1 side) of the thickness direction (z) relative to the first portion (1121) and is used for mounting. Note 10. The sealing resin (40) has a resin projection (48) that protrudes from the third resin surface (43) toward one side (x1 side) in the first direction (x), and the resin projection (48) covers at least a part of the first part (1121), as described in Appendix 9 (A10, A11, A12, A13, A20, A30, A40, A50, A51). Appendix 11. The resin projection (48) has a first side surface (481) facing one side (y1 side) of the second direction (y) perpendicular to the thickness direction (z) and the first direction (x), and a second side surface (482) facing the other side (y2 side) of the second direction (y), and covers the entire first part (1121). The first terminal part (112) has two second parts (1122) extending to both sides (y1 side and y2 side) of the second direction (y), and the two second parts (1122) penetrate the first side surface (481) and the second side surface (482), respectively, and extend to both sides (y1 side and y2 side) of the second direction (y), as described in Appendix 10 (A10, A11, A12, A20, A30, A40, A50, A51). Note 11-1. The semiconductor device (A50) according to Note 11, wherein the resin projection (48) has a first convex portion (4811) that protrudes from the first side surface (481) to one side (y1 side) in the second direction (y), the first convex portion (4811) is located between one of the two second portions (1122) and the third resin surface (43) in the first direction (x), and the first convex portion (4811) includes a portion located on the other side (z2 side) in the thickness direction (z) than the second portion (1122).Note 11-2. The semiconductor device (A50) according to Note 11 or Note 11-1, wherein the resin projection (48) has a second convex portion (4821) that protrudes from the second side surface (482) to the other side (y2 side) in the second direction (y), the second convex portion (4821) is located between the other of the two second portions (1122) and the third resin surface (43) in the first direction (x), and the second convex portion (4821) includes a portion located on the other side (z2 side) in the thickness direction (z) than the second portion (1122). Note 11-3. The resin projection (48) has a first recess (4812) that is recessed from the first side surface (481) to the other side (y2 side) in the second direction (y), the first recess (4812) is located between one of the two second parts (1122) and the third resin surface (43) in the first direction (x), and the first recess (4812) includes a portion located on the other side (z2 side) in the thickness direction (z) than the second part (1122), the semiconductor device (A51) as described in Appendix 11 or Appendix 11-2. Appendix 11-4. The resin projection (48) has a second recess (4822) that is recessed from the second side surface (482) toward one side (y1 side) in the second direction (y), the second recess (4822) is located between the other of the two second parts (1122) and the third resin surface (43) in the first direction (x), and the second recess (4822) includes a portion located on the other side (z2 side) in the thickness direction (z) relative to the second part (1122), as described in Appendix 11, Appendix 11-1, or Appendix 11-3 (A51). Appendix 12. The semiconductor device (A10, A11, A13, A20, A30, A50, A51) according to any one of appendices 2 to 7, further comprising a heat sink (60) located on the other side (z2 side) of the thickness direction (z) with respect to the insulating substrate (50), wherein the heat sink (60) has a main heat sink surface (601) facing one side (z1 side) of the thickness direction (z) and bonded to the insulating substrate (50), and a back surface (602) facing the other side (z2 side) of the thickness direction (z) and exposed from the front second resin surface (42).Note 13. The semiconductor device described in Note 12 (A10, A11, A13, A20, A30, A50, A51) wherein the back surface (602) of the heat sink is flush with the second resin surface (42). Note 14. The semiconductor device described in Note 12 or 13 (A10, A11, A13, A30, A50, A51) wherein, viewed in the thickness direction (z), the insulating substrate (50) extends further than the heat sink (60) to one side (x1 side) in the first direction (x). Note 15. The semiconductor device described in Note 14 (A10, A11, A13, A30, A50, A51) wherein, viewed in the thickness direction (z), the insulating substrate (50) overlaps with the recess (491). Note 16. A semiconductor device (A20) according to Appendix 12 or 13, wherein, viewed in the thickness direction (z), the heat sink (60) overlaps with the recess (491). Appendix 17. A semiconductor device (A10, A11, A12, A13, A30, A40, A50, A51) according to any one of Appendix 1 to 16, wherein the semiconductor element (20) is mounted on one side (z1 side) of the insulating substrate (50) in the thickness direction (z), and, viewed in the thickness direction (z), the semiconductor element (20) and the first junction (111) are separated. Appendix 18. A semiconductor device (A20) according to any one of Appendix 1 to 16, wherein the semiconductor element (20) is mounted on the first lead main surface (1111) of the first junction (111). Appendix 19. A semiconductor device according to any one of appendices 1 to 18 (A10, A11, A12, A13, A20, A30, A40, A50, A51), further comprising a second lead (12) and a third lead (13), wherein the semiconductor device (20) is a switching element having a drain electrode (202), a source electrode (201), and a gate electrode (203), the drain electrode (202) is conductive to the first junction (111), the second lead (12) is conductive to the source electrode (201) and includes a portion extending from the sealing resin (40) to the other side (x2 side) of the first direction (x), and the third lead (13) is conductive to the gate electrode (203) and includes a portion extending from the sealing resin (40) to the other side (x2 side) of the first direction (x).Note 20. A semiconductor device assembly (B10) comprising a semiconductor device (A10, A11, A12, A13, A20, A30, A40, A50, A51) described in any of Notes 1 to 19, and a heat dissipation member (91) integrally attached to the other side (z2 side) of the semiconductor device in the thickness direction (z). Note 21. A vehicle (C1) comprising a power converter (81) configured to include the semiconductor device (A10, A11, A12, A13, A20, A30, A40, A50, A51) described in Note 19.

[0110] A10, A11, A12, A13, A20, A30, A40, A50, A51: Semiconductor device, B10: Semiconductor device assembly, C1: Vehicle, Dc: Creepage distance, 10: Conductive member, 11: First lead, 111: First joint, 1111: Main surface of first lead, 1112: Back surface of first lead, 112: First terminal, 1121: First part, 1122: Second part, 1122a: Connecting part, 1122b: Bent part, 1122c: Mounting part, 12: Second lead, 121: Pad part, 122: Second terminal, 1211: Main surface of second lead, 1212: Back surface of second lead, 1221: Fourth part, 1222: Fifth part, 1223: Sixth part, 13: Third lead, 131: pad portion, 132: third terminal portion, 1311: main surface of third lead, 1312: back surface of third lead, 1321: seventh portion, 1322: eighth portion, 1323: ninth portion, 14: fourth lead, 141: pad portion, 142: fourth terminal portion, 1411: main surface of fourth lead, 1412: back surface of fourth lead, 1421: tenth portion, 1422: eleventh portion, 1423: twelfth portion, 18: bonding material, 19: conductive bonding material, 20: semiconductor element, 201: first electrode (source electrode), 202: second electrode (drain electrode), 203: third electrode (gate electrode), 205: semiconductor layer, 29: conductive bonding material, 31: connecting member, 311,312: Joint, 32: Connecting member, 33: Connecting member, 39: Conductive bonding material, 40: Sealing resin, 41: First resin surface, 42: Second resin surface, 43: Third resin surface, 44: Fourth resin surface, 45: Fifth resin surface, 46: Sixth resin surface, 48: Resin protrusion, 481: First side surface, 4811: First convex part, 4812: First recess, 482: Second side surface, 4821: Second convex part, 4822: Second recess, 483: Top surface of protrusion, 484: Bottom surface of protrusion, 49: Stepped part, 491: Recess, 4911: First surface, 4912: Second surface, 4913: Third surface, 4914: Fourth surface, 492: Convex part, 50: Insulating substrate, 501: Main surface of insulating substrate, 5 02: Back surface of insulating substrate, 51: Insulating layer, 52: First metal layer, 53: Second metal layer, 59: Bonding material, 60: Heat sink, 601: Main surface of heat sink, 602: Back surface of heat sink, 61: Main part, 62: Extension part, 621: First extension part, 621a: First recess, 621b: First through hole, 622: Second extension part, 622a: Second recess, 622b: Second through hole, 623: Third extension part, 623b: Third through hole, 80: Charging facility, 81: AC-DC converter (power converter), 82: Power receiving device, 83: Storage battery, 84: Drive system, 91: Heat sink (heat dissipation member), 92: Circuit board, 919: Sheet material, 921: Solder,

Claims

Semiconductor elements and A first lead that is electrically connected to the semiconductor element includes a first joint having a first lead main surface facing one side in the thickness direction and a first lead back surface facing the other side in the thickness direction, and a first terminal, Insulating substrate and The material comprises a sealing resin that covers the semiconductor element and the first junction and at least a part of the insulating substrate, having a first resin surface facing one side in the thickness direction, a second resin surface facing the other side in the thickness direction, and a third resin surface facing one side in a first direction perpendicular to the thickness direction, The first terminal portion includes a portion located on one side of the third resin surface in the first direction, and at least a portion of it is exposed from the sealing resin. The insulating substrate is located on the other side in the thickness direction relative to the first joint and is bonded to the back surface of the first lead. The sealing resin has a stepped portion that is displaced from the third resin surface in the first direction, The stepped portion is located between the first terminal portion and the second resin surface in the thickness direction, in the semiconductor device. 　 The stepped portion includes a recess that is recessed to the other side in the first direction from the third resin surface. The semiconductor device according to claim 1, wherein the recess extends along the thickness direction and a second direction perpendicular to the first direction. 　 The semiconductor device according to claim 2, wherein the recess is recessed from the third resin surface and the second resin surface. 　 The semiconductor device according to claim 3, wherein the recess has a first surface connected to the third resin surface and facing the other side in the thickness direction, and a second surface connected to the first surface and located on the other side in the thickness direction relative to the first surface and facing one side in the first direction. 　 The semiconductor device according to claim 4, wherein the recess has a third surface connected to the second surface and facing the other side in the thickness direction, and a fourth surface connected to the third surface and located on the other side in the thickness direction relative to the third surface and facing one side in the first direction. 　 The semiconductor device according to claim 2, wherein the recess is groove-shaped and located in the middle of the thickness direction of the third resin surface. 　 The sealing resin has a fourth resin surface facing the other side of the first direction, a fifth resin surface facing one side of the second direction, and a sixth resin surface facing the other side of the second direction. The semiconductor device according to any one of claims 2 to 6, wherein the recess reaches the fifth resin surface and the sixth resin surface. 　 The stepped portion includes a protrusion that extends beyond the third resin surface to one side in the first direction, The semiconductor device according to claim 1, wherein the protrusion extends along the thickness direction and a second direction perpendicular to the first direction. 　 The semiconductor device according to any one of claims 1 to 8, wherein the first terminal portion includes a first portion that extends from the third resin surface to one side in the first direction when viewed in the thickness direction, and a second portion that includes a portion located on one side of the thickness direction relative to the first portion and is used for mounting. 　 The sealing resin has a resin projection that protrudes from the third resin surface to one side in the first direction, The semiconductor device according to claim 9, wherein the resin projection covers at least a portion of the first part. 　 The resin projection has a first surface facing one side in a second direction perpendicular to the thickness direction and the first direction, and a second surface facing the other side in the second direction, and covers the entire first part. The first terminal portion has two second portions extending on both sides in the second direction, The semiconductor device according to claim 10, wherein the two second parts extend through the first and second sides, respectively, and to both sides in the second direction. 　 The insulating substrate is further provided with a heat sink located on the other side in the thickness direction, The semiconductor device according to any one of claims 2 to 7, wherein the heat sink has a main surface facing one side in the thickness direction and bonded to the insulating substrate, and a back surface facing the other side in the thickness direction and exposed from the second resin surface. 　 The semiconductor device according to claim 12, wherein the back surface of the heat sink is flush with the second resin surface. 　 The semiconductor device according to claim 12 or 13, wherein, when viewed in the thickness direction, the insulating substrate extends further in one direction than the heat sink. 　 The semiconductor device according to claim 14, wherein, when viewed in the thickness direction, the insulating substrate overlaps with the recess. 　 The semiconductor device according to claim 12 or 13, wherein, when viewed in the thickness direction, the heat sink overlaps with the recess. 　 The semiconductor element is mounted on one side of the insulating substrate in the thickness direction. The semiconductor device according to any one of claims 1 to 16, wherein, when viewed in the thickness direction, the semiconductor element and the first junction are separated. 　 The semiconductor device according to any one of claims 1 to 16, wherein the semiconductor element is mounted on the first lead main surface of the first junction. 　 Second lead, A third lead, and further equipped, The semiconductor element is a switching element having a drain electrode, a source electrode, and an electrode. The drain electrode is electrically connected to the first junction. The second lead is conductive to the source electrode and includes a portion that extends from the sealing resin to the other side in the first direction. The semiconductor device according to any one of claims 1 to 18, wherein the third lead is conductive to the gate electrode and includes a portion extending from the sealing resin to the other side in the first direction. 　 A semiconductor device assembly comprising a semiconductor device according to any one of claims 1 to 19, and a heat dissipation member integrally attached to the other side of the semiconductor device in the thickness direction.

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