Semiconductor device

Abstract

This semiconductor device includes a semiconductor element, a first lead electrically connected to the semiconductor element, and a sealing resin that covers the semiconductor element and that has a resin back surface facing a first side in the thickness direction. The first lead includes a die pad part covered by the sealing resin, and a first terminal part exposed from the sealing resin. The first terminal part has a terminal mounting surface facing the first side in the thickness direction. The sealing resin includes a protrusion projecting from the resin back surface towards the first side in the thickness direction. The protrusion includes a portion located farther on the first side in the thickness direction than the terminal mounting surface.

Description

Semiconductor device

[0001] The present disclosure relates to a semiconductor device.

[0002] Patent Document 1 discloses a semiconductor device including a semiconductor element, a die pad portion, a first terminal portion, a second terminal portion, and a sealing resin. The die pad portion mounts the semiconductor element on a first lead main surface facing one side in the thickness direction. The first lead back surface of the die pad portion facing the other side in the thickness direction is exposed from the sealing resin. The semiconductor device is surface-mounted on a circuit board by electrically connecting the first terminal portion and the second terminal portion to wiring patterns on the circuit board with solder. Then, the semiconductor device dissipates heat through a heat sink disposed opposite the first lead back surface. In order to provide a gap between the circuit board and the sealing resin after mounting, the mounting surfaces of the ends of the first terminal portion and the second terminal portion are located on one side in the thickness direction from the sealing resin. Therefore, variations in the amount of solder during mounting and the spreading manner of the solder after reflow may cause variations in the position of the first lead back surface in the thickness direction.

[0003] Japanese Unexamined Patent Application Publication No. 2024-199,79

[0004] [Summary] One problem of the present disclosure is to provide a semiconductor device that has been improved from the prior art. In particular, in view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device that can suppress variations in the height from the circuit board after mounting.

[0005] The semiconductor device provided by the first aspect of the present disclosure includes a semiconductor element, a plurality of leads electrically connected to the semiconductor element, and a sealing resin that covers the semiconductor element and has a resin back surface facing the first side in the thickness direction. Each of the plurality of leads includes a pad portion covered by the sealing resin and a terminal portion exposed from the sealing resin. Each terminal portion includes a terminal mounting surface facing the first side in the thickness direction. The sealing resin further includes a convex portion protruding from the resin back surface toward the first side in the thickness direction, and the convex portion includes a portion located on the first side in the thickness direction from each terminal mounting surface.

[0006] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings.

[0007] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 3 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 4 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 5 is a perspective view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 6 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 7 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 8 is a front view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 9 is a side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 10 is a plan view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 11 is a bottom view of a main part showing a semiconductor device according to the first embodiment of the present disclosure. Figure 12 is a cross-sectional view along the line XII-XII in Figure 11. Figure 13 is an enlarged view of Figure 12. Figure 14 is an enlarged view of Figure 12. Figure 15 is a cross-sectional view along the line XV-XV in Figure 11. Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 11. Figure 17 is a cross-sectional view along the line XVII-XVII in Figure 11. Figure 18 is a cross-sectional view showing the semiconductor device in use according to the first embodiment of this disclosure. Figure 19 is a schematic diagram showing a vehicle equipped with the semiconductor device according to the first embodiment of this disclosure. Figure 20 is a bottom view showing a first modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 21 is a bottom view showing a second modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 22 is a bottom view showing a third modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 23 is a bottom view showing a fourth modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 24 is a bottom view showing a fifth modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 25 is a bottom view showing a sixth modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 26 is a cross-sectional view showing a seventh modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 27 is a cross-sectional view showing an eighth modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 28 is a cross-sectional view showing a ninth modified example of the semiconductor device according to the first embodiment of this disclosure. Figure 29 is a cross-sectional view showing a tenth modified example of the semiconductor device according to the first embodiment of this disclosure.Figure 30 is a perspective view showing a semiconductor device according to the second embodiment of this disclosure. Figure 31 is a bottom view showing a semiconductor device according to the second embodiment of this disclosure. Figure 32 is a cross-sectional view showing a semiconductor device according to the second embodiment of this disclosure. Figure 33 is a perspective view showing a semiconductor device according to the third embodiment of this disclosure. Figure 34 is a perspective view of a main part showing a semiconductor device according to the third embodiment of this disclosure. Figure 35 is a bottom view showing a semiconductor device according to the third embodiment of this disclosure. Figure 36 is a cross-sectional view showing a semiconductor device according to the third embodiment of this disclosure.

[0008] [Detailed Description] Preferred embodiments of this disclosure will be described below with reference to the drawings.

[0009] The terms "first," "second," "third," etc., used in this disclosure are for identification purposes only and are not intended to assign any order to the objects.

[0010] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed along a certain direction" includes both "object A overlapping with all of object B" and "object A overlapping with a part of object B."

[0011] First Embodiment: Figures 1 to 17 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A10 of this embodiment comprises a conductive member 10, semiconductor elements 20, 25, connecting members 31, 32, 33, 34 and sealing resin 40. The semiconductor device A10 has a rectangular shape when viewed in the thickness direction (plan view). For convenience of explanation, the thickness direction (plan view direction) of the semiconductor device A10 is defined as the thickness direction z, the direction along one side of the semiconductor device A10 perpendicular to the thickness direction z (left and right direction in Figures 6 and 7) is defined as the first direction x, and the direction perpendicular to the thickness direction z and the first direction x (up and down direction in Figures 6 and 7) is defined as the second direction y. Furthermore, one side of the thickness direction z (the lower side in Figures 8 to 9) is defined as the first side z1, and the other side (the upper side in Figures 8 to 9) is defined as the second side z2. One side of the first direction x (the left side in Figures 6 and 7) is designated as the first side x1, and the other side (the right side in Figures 6 and 7) is designated as the second side x2. One side of the second direction y (the lower side in Figure 6) is designated as the first side y1, and the other side (the upper side in Figure 6) is designated as the second side y2. The shape and dimensions of the semiconductor device A10 are not limited.

[0012] Conductive member 10: The conductive member 10 is a member that constitutes a conductive path to the semiconductor elements 20 and 25. The conductive member 10 in this embodiment includes a first lead 11, a second lead 12, a third lead 13, and a fourth lead 14. The material of the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14 is not limited and includes, for example, copper (Cu) or a copper alloy. In addition, the first lead 11, the second lead 12, the third lead 13, and the fourth lead 14 may be plated with silver (Ag), nickel (Ni), tin (Sn), etc., in appropriate places.

[0013] First lead 11: As shown in Figures 1 to 17, the first lead 11 has a die pad portion 111 and a plurality of first terminal portions 112. The die pad portion 111 is covered with a sealing resin 40, and each first terminal portion 112 is exposed from the sealing resin 40. The die pad portion 111 has a first lead main surface 1111 and a first lead back surface 1112. The first lead main surface 1111 is the surface facing the first side z1 in the thickness direction z. The first lead back surface 1112 is the surface facing the second side z2 in the thickness direction z. A semiconductor element 20 is mounted on the first lead main surface 1111. The die pad portion 111 also has a first lead second side surface 1116. The first lead second side surface 1116 is located between the first lead main surface 1111 and the first lead back surface 1112 in the thickness direction z, and is the surface facing the second side x2 in the first direction x.

[0014] The die pad portion 111 of this embodiment further includes a first lead side surface 1113, a first intermediate surface 1114, and a contact avoidance surface 1117. The first lead side surface 1113 is located between the first lead main surface 1111 and the first lead back surface 1112 in the thickness direction z, and is a surface facing the first side x1 in the first direction x. The first intermediate surface 1114 is located between the first lead main surface 1111 and the first lead back surface 1112 in the thickness direction z, and is a surface facing the second side z2 (the same side as the first lead back surface 1112) in the thickness direction z.

[0015] The contact avoidance surface 1117 is located between the first lead main surface 1111 and the first lead back surface 1112 in the thickness direction z, and is connected to the first lead main surface 1111 and the first lead side surface 1113. In other words, the contact avoidance surface 1117 is located on the first side z1 in the thickness direction z of the die pad portion 111, and on the first side x1 in the first direction x. The contact avoidance surface 1117 is located on the second side z2 in the thickness direction z from the first lead main surface 1111. In this embodiment, the contact avoidance surface 1117 extends to each edge in the second direction y of the die pad portion 111 and is a curved surface that is convex outward.

[0016] The shape of the die pad portion 111 is not limited in any way. In the illustrated example, the die pad portion 111 is rectangular when viewed along the thickness direction z. Also, the shapes of the first lead main surface 1111 and the first lead back surface 1112 are not limited in any way, and in the illustrated example, they are rectangular when viewed along the thickness direction z.

[0017] Multiple first terminal portions 112 are arranged in a line in the second direction y. Each first terminal portion 112 is bent toward the first side z1 in the thickness direction z and has a first portion 1121, a second portion 1122, and a third portion 1123.

[0018] The first part 1121 is connected to the die pad part 111. The first part 1121 extends from the second side surface 1116 of the first lead of the die pad part 111 to the second side x2 in the first direction x, and in the illustrated example it is parallel to the xy plane. In this embodiment, the die pad part 111 has a larger thickness z in the thickness direction than the first part 1121. The first part 1121 is separated from the back surface 1112 of the first lead in the thickness direction z, and in the illustrated example it is in contact with the main surface 1111 of the first lead. One side of the first part 1121 is flush with the main surface 1111 of the first lead. The first part 1121 penetrates the third resin surface 43. The shape of the first part 1121 is not limited in any way, and in the illustrated example it is rectangular when viewed along the thickness direction z.

[0019] The second part 1122 is located on the first side z1 in the thickness direction z relative to the first part 1121. The second part 1122 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The second part 1122 has a shape that extends along the first direction x. As shown in Figures 12, 13, 15, and 16, the second part 1122 has a terminal mounting surface 1122a. The terminal mounting surface 1122a faces the first side z1 in the thickness direction z and is located on the first terminal portion 112, furthest to the first side z1 in the thickness direction z. The terminal mounting surface 1122a faces the circuit board or the like when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0020] The third part 1123 is interposed between the first part 1121 and the second part 1122. The third part 1123 extends from the first part 1121 to the first side z1 in the thickness direction z. In the illustrated example, the third part 1123 is inclined with respect to the thickness direction z (yz plane). The shape of the third part 1123 is not limited, and in the illustrated example, it is rectangular when viewed along the first direction x.

[0021] Second lead 12: The second lead 12 is positioned spaced apart from the first lead 11 and is located on the first side x1 in the first direction x with respect to the die pad portion 111. The second lead 12 has a second pad portion 121 and a plurality of second terminal portions 122. The second pad portion 121 is covered with sealing resin 40, and the plurality of second terminal portions 122 are exposed from the sealing resin 40.

[0022] The second pad portion 121 has a second lead main surface 1211 and a second lead back surface 1212. The second lead main surface 1211 is the surface facing the first side z1 in the thickness direction z. The second lead back surface 1212 is the surface facing the second side z2 in the thickness direction z. In this embodiment, the second lead main surface 1211 is in the same position as the first lead main surface 1111 in the thickness direction z. A connecting member 31 is electrically connected to the second lead main surface 1211. The shape of the second pad portion 121 is not limited in any way, and in the illustrated example, it is an elongated rectangle with the second direction y as the longitudinal direction. Also, when viewed along the thickness direction z, the second pad portion 121 is smaller than the die pad portion 111. Furthermore, the second pad portion 121 is smaller in size in the thickness direction z than the die pad portion 111 and is the same as the first terminal portion 112.

[0023] Multiple second terminal portions 122 are arranged in a line in the second direction y. The second terminal portions 122 are bent toward the first side z1 in the thickness direction z and have a fourth portion 1221, a fifth portion 1222, and a sixth portion 1223.

[0024] The fourth section 1221 is connected to the second pad section 121 and extends from the second pad section 121 in the first direction x to the first side x1, which is parallel to the xy plane in the illustrated example. The surface of the fourth section 1221 facing the first side z1 in the thickness direction z is flush with the second lead main surface 1211. The shape of the fourth section 1221 is not limited in any way, and in the illustrated example it is rectangular when viewed along the thickness direction z.

[0025] The fifth part 1222 is located on the first side z1 in the thickness direction z relative to the fourth part 1221. The fifth part 1222 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The fifth part 1222 has a shape that extends along the first direction x. As shown in Figures 12 and 14, the fifth part 1222 has a terminal mounting surface 1222a. The terminal mounting surface 1222a faces the first side z1 in the thickness direction z and is located furthest to the first side z1 in the thickness direction z on the second terminal part 122. The terminal mounting surface 1222a faces the circuit board or the like when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0026] The sixth section 1223 is interposed between the fourth section 1221 and the fifth section 1222. The sixth section 1223 extends from the fourth section 1221 to the first side z1 in the thickness direction z. In the illustrated example, the sixth section 1223 is inclined with respect to the thickness direction z (yz plane). The shape of the sixth section 1223 is not limited, and in the illustrated example, it is rectangular when viewed along the first direction x.

[0027] Third lead 13: The third lead 13 is positioned spaced apart from the first lead 11 and the second lead 12, and is located on the first side x1 in the first direction x with respect to the die pad portion 111. The third lead 13 is also aligned with the second lead 12 in the second direction y. The third lead 13 has a third pad portion 131 and a third terminal portion 132. The third pad portion 131 is covered with sealing resin 40, and the third terminal portion 132 is exposed from the sealing resin 40.

[0028] The third pad portion 131 has a third lead main surface 1311 and a third lead back surface 1312. The third lead main surface 1311 is the surface facing the first side z1 in the thickness direction z. The third lead back surface 1312 is the surface facing the second side z2 in the thickness direction z. In this embodiment, the third lead main surface 1311 is in the same position as the first lead main surface 1111 in the thickness direction z. A connecting member 32 is electrically joined to the third lead main surface 1311. The shape of the third pad portion 131 is not limited in any way, and in the illustrated example, it is rectangular when viewed along the thickness direction z. Also, when viewed along the thickness direction z, the third pad portion 131 is smaller than the second pad portion 121. Also, the third pad portion 131 is smaller in size in the thickness direction z than the die pad portion 111 and is the same as the second pad portion 121.

[0029] The third terminal portion 132 is bent toward the first side z1 in the thickness direction z, and has a seventh portion 1321, an eighth portion 1322, and a ninth portion 1323.

[0030] The seventh section 1321 is connected to the third pad section 131 and extends from the third pad section 131 in the first direction x to the first side x1, which is parallel to the xy plane in the illustrated example. The surface of the seventh section 1321 facing the first side z1 in the thickness direction z is flush with the third lead main surface 1311. The shape of the seventh section 1321 is not limited in any way, and in the illustrated example it is rectangular when viewed along the thickness direction z.

[0031] The eighth part 1322 is located on the first side z1 in the thickness direction z relative to the seventh part 1321. The eighth part 1322 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The eighth part 1322 has a shape that extends along the first direction x. As shown in Figure 16, the eighth part 1322 has a terminal mounting surface 1322a. The terminal mounting surface 1322a faces the first side z1 in the thickness direction z and is located furthest to the first side z1 in the thickness direction z on the third terminal part 132. The terminal mounting surface 1322a faces the circuit board or the like when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0032] Section 9 1323 is interposed between Section 7 1321 and Section 8 1322. Section 9 1323 extends from Section 7 1321 to the first side z1 in the thickness direction z. In the illustrated example, Section 9 1323 is inclined with respect to the thickness direction z (yz plane). The shape of Section 9 1323 is not limited, and in the illustrated example, it is rectangular when viewed along the first direction x.

[0033] Fourth lead 14: The fourth lead 14 is positioned spaced apart from the first lead 11, the second lead 12, and the third lead 13, and is located on the first side x1 in the first direction x with respect to the die pad portion 111. The fourth lead 14 is also located between the second lead 12 and the third lead 13 in the second direction y. The fourth lead 14 has a fourth pad portion 141 and a fourth terminal portion 142. The fourth pad portion 141 is covered with sealing resin 40, and the fourth terminal portion 142 is exposed from the sealing resin 40.

[0034] The fourth pad portion 141 has a fourth lead main surface 1411 and a fourth lead back surface 1412. The fourth lead main surface 1411 is the surface facing the first side z1 in the thickness direction z. The fourth lead back surface 1412 is the surface facing the second side z2 in the thickness direction z. In this embodiment, the fourth lead main surface 1411 is in the same position as the first lead main surface 1111 in the thickness direction z. A connecting member 33 is electrically joined to the fourth lead main surface 1411. The shape of the fourth pad portion 141 is not limited in any way, and in the illustrated example, it is rectangular when viewed along the thickness direction z. Also, when viewed along the thickness direction z, the fourth pad portion 141 is smaller than the second pad portion 121 and about the same size as the third pad portion 131. Also, the fourth pad portion 141 is smaller in the thickness direction z than the die pad portion 111 and is the same as the second pad portion 121 and the third pad portion 131.

[0035] The fourth terminal portion 142 is bent toward the first side z1 in the thickness direction z, and has a tenth portion 1421, an eleventh portion 1422, and a twelfth portion 1423.

[0036] The tenth section 1421 is connected to the fourth pad section 141 and extends from the fourth pad section 141 in the first direction x to the first side x1, which is parallel to the xy plane in the illustrated example. The surface of the tenth section 1421 facing the first side z1 in the thickness direction z is flush with the fourth lead main surface 1411. The shape of the tenth section 1421 is not limited in any way, and in the illustrated example it is rectangular when viewed along the thickness direction z.

[0037] The 11th part 1422 is located on the first side z1 in the thickness direction z relative to the 10th part 1421. The 11th part 1422 is used when surface mounting the semiconductor device A10 onto a circuit board or the like. The 11th part 1422 has a shape that extends along the first direction x. As shown in Figure 15, the 11th part 1422 has a terminal mounting surface 1422a. The terminal mounting surface 1422a faces the first side z1 in the thickness direction z and is located on the first side z1 in the thickness direction z of the fourth terminal part 142. The terminal mounting surface 1422a faces the circuit board or the like when surface mounting the semiconductor device A10 onto a circuit board or the like.

[0038] The twelfth section 1423 is interposed between the tenth section 1421 and the eleventh section 1422. The twelfth section 1423 extends from the tenth section 1421 to the first side z1 in the thickness direction z. In the illustrated example, the twelfth section 1423 is inclined with respect to the thickness direction z (yz plane). The shape of the twelfth section 1423 is not limited, and in the illustrated example, it is rectangular when viewed along the first direction x.

[0039] Semiconductor element 20: As shown in Figures 5 and 11 to 17, the semiconductor element 20 is mounted on the first lead main surface 1111 of the die pad portion 111. In semiconductor device A10, the semiconductor element 20 is a switching element. The switching element is, for example, an n-channel, vertically structured MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The semiconductor element 20 is not limited to a MOSFET. The semiconductor element 20 may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 20 has a semiconductor layer 205, a first electrode 201, a second electrode 202, and a third electrode 203.

[0040] The semiconductor layer 205 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0041] The first electrode 201 is provided on the first side z1 of the semiconductor layer 205 in the thickness direction z (the side in the thickness direction z that the first lead main surface 1111 faces). The first electrode 201 corresponds to the source electrode of the semiconductor element 20.

[0042] The second electrode 202 is provided on the opposite side of the first electrode 201 in the thickness direction z. The second electrode 202 faces the first lead main surface 1111 of the die pad portion 111 of the first lead 11. The second electrode 202 corresponds to the drain electrode of the semiconductor element 20. In this embodiment, the second electrode 202 is electrically bonded to the first lead main surface 1111 via a bonding layer 29. The bonding layer 29 is, for example, solder, silver (Ag) paste, calcined silver, etc.

[0043] The third electrode 203 is located on the same side as the first electrode 201 in the thickness direction z, and is positioned away from the first electrode 201. The third electrode 203 corresponds to the gate electrode of the semiconductor element 20. Viewed along the thickness direction z, the area of ​​the third electrode 203 is smaller than the area of ​​the first electrode 201.

[0044] Semiconductor element 25: The semiconductor element 25 is mounted on the first lead main surface 1111 of the die pad portion 111. The semiconductor element 25 is disposed on the first side y1 in the second direction y of the semiconductor element 20. In the semiconductor device A10, the semiconductor element 25 is a diode. The semiconductor element 25 includes a semiconductor layer 255, a first electrode 251, and a second electrode 252.

[0045] The semiconductor layer 255 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate.

[0046] The first electrode 251 is provided on the first side z1 in the thickness direction z of the semiconductor layer 255 (the side facing the first lead main surface 1111 in the thickness direction z). The first electrode 251 corresponds to the anode electrode of the semiconductor element 25.

[0047] The second electrode 252 is provided on the side opposite to the first electrode 251 in the thickness direction z. The second electrode 252 faces the first lead main surface 1111 of the die pad portion 111 of the first lead 11. The second electrode 252 corresponds to the cathode electrode of the semiconductor element 25. In the present embodiment, the second electrode 252 is conductively joined to the first lead main surface 1111 via the bonding layer 29.

[0048] Connection members 31, 32, 33, 34: The connection member 31 is conductively joined to the first electrode 201 of the semiconductor element 20 and the second lead main surface 1211 of the second pad portion 121 of the second lead 12. The material of the connection member 31 is not limited at all and includes metals such as aluminum (Al), copper (Cu), and gold (Au). In the present embodiment, the connection member 31 is a wire containing aluminum (Al) and has a relatively large diameter in order to allow a large current to flow. The diameter of the connection member 31 is not limited, but is, for example, about 400 to 500 μm. The number of the connection members 31 is not limited at all, and a plurality of connection members 31 may be provided.

[0049] The connecting member 32 is electrically connected to the third electrode 203 of the semiconductor element 20 and the main surface 1311 of the third lead of the third pad portion 131 of the third lead 13. The material and diameter of the connecting member 32 are not limited, but in this embodiment, the same wire as the connecting member 31 is used.

[0050] The connecting member 33 is electrically connected to the first electrode 201 of the semiconductor element 20 and the main surface 1411 of the fourth lead of the fourth pad portion 141 of the fourth lead 14. The material and diameter of the connecting member 33 are not limited, but in this embodiment, the same wire as the connecting member 31 is used.

[0051] The connecting member 34 is electrically connected to the first electrode 251 of the semiconductor element 25 and the second lead main surface 1211 of the second pad portion 121 of the second lead 12. The material and diameter of the connecting member 34 are not limited, but in this embodiment, the same wire as the connecting member 31 is used.

[0052] As shown in Figures 5 and 11, all of the connecting members 31 to 34 overlap the contact avoidance surface 1117 when viewed along the thickness direction z. In this embodiment, the first terminal portion 112 of the first lead 11 is the drain terminal, the second terminal portion 122 of the second lead 12 is the source terminal, the third terminal portion 132 of the third lead 13 is the gate terminal, and the fourth terminal portion 142 of the fourth lead 14 is the source sense terminal.

[0053] Sealing resin 40: As shown in Figures 1 to 17, the sealing resin 40 covers the semiconductor elements 20, 25 and connecting members 31, 32, 33, 34, as well as parts of the first lead 11, second lead 12, third lead 13, and fourth lead 14. The sealing resin 40 has electrical insulating properties. The sealing resin 40 is made of a material including, for example, black epoxy resin. The sealing resin 40 has a first resin surface 41, a second resin surface 42, a third resin surface 43, a fourth resin surface 44, a fifth resin surface 45, and a sixth resin surface 46.

[0054] The first resin surface 41 faces the first side z1 in the thickness direction z (the same side as the first lead main surface 1111 in the thickness direction z). Viewed in the thickness direction z, the first resin surface 41 is rectangular. The second resin surface 42 faces the second side z2 in the thickness direction z (the opposite side from the first resin surface 41 in the thickness direction z). Viewed in the thickness direction z, the second resin surface 42 is rectangular. The first lead back surface 1112 of the die pad portion 111 of the first lead 11 is exposed from the second resin surface 42. The second resin surface 42 and the first lead back surface 1112 are flush with each other. The first lead back surface 1112 is separated from the third resin surface 43 in the first direction x.

[0055] The third resin surface 43 faces the second side x2 in the first direction x. The first parts 1121 of the multiple first terminal portions 112 of the first lead 11 penetrate the third resin surface 43 and protrude from the third resin surface 43. Also, the first parts 1121 are separated from the second resin surface 42 in the thickness direction z.

[0056] The fourth resin surface 44 faces the first side x1 in the first direction x (the side opposite to the third resin surface 43 in the first direction x). In this embodiment, the fourth portion 1221 of the multiple second terminal portions 122 of the second lead 12, the seventh portion 1321 of the third terminal portion 132 of the third lead 13, and the tenth portion 1421 of the fourth terminal portion 142 of the fourth lead 14 penetrate the fourth resin surface 44 and protrude from the fourth resin surface 44. Furthermore, the fourth portion 1221, the seventh portion 1321, and the tenth portion 1421 are separated from the second resin surface 42 in the thickness direction z.

[0057] The fifth resin surface 45 and the sixth resin surface 46 are surfaces facing opposite directions in the second direction y.

[0058] Furthermore, the sealing resin 40 has protrusions 47. The protrusions 47 project from the first resin surface 41 toward the first side z1 in the thickness direction z. In this embodiment, the sealing resin 40 has four protrusions 47. Each protrusion 47 is located near the four corners of the rectangular first resin surface 41 when viewed in the thickness direction z. The shape of each protrusion 47 is hemispherical. As shown in Figure 7, when viewed in the thickness direction z, the shape of each protrusion 47 is circular. Also, as shown in Figures 8, 9, and 12 to 16, when viewed in a direction perpendicular to the thickness direction z, the shape of each protrusion 47 is arc-shaped. The shape of each protrusion 47 can be described as a so-called tapered shape, where the area of ​​the cross-section (xy plane) perpendicular to the thickness direction z decreases as it approaches the first side z1 in the thickness direction z. Note that the number, arrangement position, and shape of the protrusions 47 are not limited.

[0059] The height dimension H of each protrusion 47 (dimension in the thickness direction z from the first resin surface 41) (see Figures 13 and 14) is 0.05 mm or more and 0.5 mm or less. If the height dimension H is less than 0.05 mm, when the underfill agent is applied after mounting the semiconductor device A10 on the circuit board, the underfill agent may not penetrate well between the first resin surface 41 and the circuit board. On the other hand, if the height dimension H is greater than 0.5 mm, the dimension in the thickness direction z of the semiconductor device A10 becomes large. It is more desirable for the height dimension H to be 0.1 mm or more and 0.2 mm or less. However, the height dimension H is not limited to the above.

[0060] As shown in Figure 13, each protrusion 47 includes a portion located on the first side z1 in the thickness direction z from the terminal mounting surface 1122a of the first terminal portion 112. The first resin surface 41 of the sealing resin 40 is located on the second side z2 in the thickness direction z from the terminal mounting surface 1122a. In other words, in the thickness direction z, the terminal mounting surface 1122a is located between the tip of each protrusion 47 (the end on the first side z1 in the thickness direction z) and the first resin surface 41. Similarly, as shown in Figure 14, each protrusion 47 includes a portion located on the first side z1 in the thickness direction z from the terminal mounting surface 1222a of the second terminal portion 122. The first resin surface 41 of the sealing resin 40 is located on the second side z2 in the thickness direction z from the terminal mounting surface 1222a. In other words, in the thickness direction z, the terminal mounting surface 1222a is located between the tip of each protrusion 47 and the first resin surface 41. As shown in Figures 15 and 16, the terminal mounting surface 1322a and the terminal mounting surface 1422a are similarly located between the tip of each protrusion 47 and the first resin surface 41 in the thickness direction z.

[0061] Next, an example of the use of semiconductor device A10 will be described based on Figures 18 and 19.

[0062] Figure 18 shows the semiconductor device A10 in use. In this example, the semiconductor device A10 is surface-mounted on a circuit board 92. Specifically, the second part 1122 of the first terminal portion 112, the fifth part 1222 of the second terminal portion 122, the eighth part 1322 of the third terminal portion 132, and the eleventh part 1422 of the fourth terminal portion 142 are electrically connected to the wiring pattern 922 of the circuit board 92, for example, by solder 921. A heat sink 91 is positioned opposite the back surface 1112 of the first lead of the die pad portion 111. In the illustrated example, a sheet material 919 is placed between the back surface 1112 of the first lead and the heat sink 91. The sheet material 919 is, for example, an insulating sheet. In some cases, an underfill material is filled between the first resin surface 41 and the circuit board 92.

[0063] Figure 19 is a schematic diagram showing a vehicle V equipped with semiconductor device A10. Vehicle V is, for example, an electric vehicle (EV).

[0064] As shown in Figure 19, the vehicle V is equipped with an on-board charger 95, a storage battery 96, and a drive system 97. Power is supplied to the on-board charger 95 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, the means of supplying power from the power supply facility to the on-board charger 95 may be wired. The on-board charger 95 is configured as a boost-type DC-DC converter. As shown in Figure 19, the semiconductor device A10 is part of the on-board charger 95 and is used, for example, in the aforementioned DC-DC converter. The voltage supplied to the on-board charger 95 is boosted by the converter and then supplied to the storage battery 96. The boosted voltage is, for example, 600V.

[0065] The drive system 97 drives the vehicle V. The drive system 97 includes an inverter 971 and a drive source 972. Power stored in the battery 96 is supplied to the inverter 971. The power supplied from the battery 96 to the inverter 971 is DC power. In addition, unlike the power system shown in Figure 19, a boost DC-DC converter may be further provided between the battery 96 and the inverter 971. The inverter 971 converts DC power to AC power. The inverter 971 is conductive to the drive source 972. The drive source 972 includes an AC motor and a transmission. When the AC power converted by the inverter 971 is supplied to the drive source 972, the AC motor rotates and its rotation is transmitted to the transmission. The transmission reduces the rotational speed transmitted from the AC motor as appropriate and rotates the drive shaft of the vehicle V. This drives the vehicle V. In driving the vehicle V, it is necessary to freely control the rotational speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. Therefore, the inverter 971 is necessary to output AC power whose frequency is appropriately changed in order to correspond to the required rotational speed of the AC motor.

[0066] Next, the operation of semiconductor device A10 will be explained.

[0067] According to this embodiment, the sealing resin 40 has protrusions 47 that project from the first resin surface 41 toward the first side z1 in the thickness direction z. Each protrusion 47 includes a portion located toward the first side z1 in the thickness direction z relative to each terminal mounting surface 1122a, 1222a, 1322a, 1422a. Therefore, when the semiconductor device A10 is mounted on the circuit board 92, each protrusion 47 comes into contact with the circuit board 92. As a result, the positions of the second resin surface 42 and the back surface 1112 of the first lead of the die pad portion 111 in the thickness direction z are determined by the dimension of the sealing resin 40 in the thickness direction z. Therefore, regardless of the amount of solder used during mounting or the way the solder spreads after reflow, variations in the height of the semiconductor device A10 from the circuit board 92 after mounting can be suppressed. When multiple semiconductor devices A10 are mounted on the circuit board 92, the variation in the position of the back surface 1112 of the first lead of each semiconductor device A10 in the thickness direction z is suppressed, so that the common heat sink 91 and the back surface 1112 of the first lead of each semiconductor device A10 can be brought into closer contact. This improves the heat dissipation effect.

[0068] Furthermore, according to this embodiment, when the semiconductor device A10 is mounted on the circuit board 92, each protrusion 47 comes into contact with the circuit board 92, creating a gap between the first resin surface 41 and the circuit board 92. By filling this gap with an underfill material, the semiconductor device A10 can improve its adhesion to the circuit board 92.

[0069] Furthermore, according to this embodiment, the height dimension H of the protrusion 47 is 0.05 mm or more. Therefore, when the semiconductor device A10 is mounted on the circuit board 92 and an underfill agent is applied, it is possible to suppress the obstruction of the penetration of the underfill agent between the first resin surface 41 and the circuit board 92. Also, according to this embodiment, the height dimension H of the protrusion 47 is 0.5 mm or less. Therefore, it is possible to suppress the semiconductor device A10 from having an unnecessarily large dimension in the thickness direction z.

[0070] Furthermore, according to this embodiment, when the semiconductor device A10 is mounted on the circuit board 92, each protrusion 47 comes into contact with the circuit board 92. Therefore, when the heat sink 91 is pressed against the back surface 1112 of the first lead of the semiconductor device A10, the force applied to the first terminal portion 112, the second terminal portion 122, the third terminal portion 132, and the fourth terminal portion 142 can be suppressed.

[0071] Furthermore, according to this embodiment, the sealing resin 40 is provided with four protrusions 47. Each protrusion 47 is located near the four corners of the rectangular first resin surface 41 when viewed in the thickness direction z. Each protrusion 47 contacts the circuit board 92, thereby preventing the semiconductor device A10 from being mounted at an angle relative to the circuit board 92.

[0072] Furthermore, according to this embodiment, the die pad portion 111 is provided with a contact avoidance surface 1117. The contact avoidance surface 1117 is connected to the first lead main surface 1111 and the first lead side surface 1113, and is located on the second side z2 in the thickness direction z from the first lead main surface 1111. The connecting members 31 to 34 all overlap the contact avoidance surface 1117 when viewed along the thickness direction z. Therefore, the semiconductor device A10 can suppress contact between the connecting members 31 to 34 and the die pad portion 111 compared to the case where the die pad portion 111 is not provided with a contact avoidance surface 1117.

[0073] Furthermore, according to this embodiment, the contact avoidance surface 1117 extends to each edge of the die pad portion 111 in the second direction y. Therefore, the semiconductor device A10 can suppress contact between the connecting members 31 to 34 and the die pad portion 111, even when the connecting members 31 to 34 are located near each edge of the die pad portion 111 in the second direction y.

[0074] Furthermore, according to this embodiment, as shown in Figures 12 and 15 to 17, the back surface 1112 of the first lead is exposed from the second resin surface 42. This makes it possible to place, for example, a heat sink 91 opposite the back surface 1112 of the first lead. Also, the second part 1122 is located on the first side z1 in the thickness direction z compared to the first part 1121. This makes it possible to surface mount the semiconductor device A10 onto a circuit board 92 or the like using the second part 1122. In addition, the back surface 1112 of the first lead is separated from the third resin surface 43 in the first direction x. Also, the first part 1121 is separated from the second resin surface 42 in the thickness direction z. Therefore, a portion of the sealing resin 40 exists between the back surface 1112 of the first lead and the first part 1121. This allows the first lead 11 to be held more firmly by the sealing resin 40.

[0075] Furthermore, according to this embodiment, the die pad portion 111 has a larger thickness z in the thickness direction than the first portion 1121. As a result, when heat is transferred from the semiconductor element 20 to the back surface 1112 of the first lead, it is possible to transfer heat over a wider area in the first direction x and the second direction y. Therefore, it is possible to dissipate heat from the semiconductor element 20 to the heat sink 91, etc., by a wider area of ​​the back surface 1112 of the first lead, thereby improving heat dissipation efficiency.

[0076] In this embodiment, the case in which semiconductor elements 20 and 25 are mounted on the first lead main surface 1111 of the die pad portion 111 has been described, but this is not the only case. The type and number of semiconductor elements mounted on the first lead main surface 1111 are not limited, and other electronic components may also be mounted.

[0077] Figures 20 to 36 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiments are denoted by the same reference numerals. Furthermore, the configurations of each part in each modification and each embodiment can be appropriately combined with each other to the extent that no technical inconsistencies arise.

[0078] First Embodiment, First Modification: Figure 20 is a bottom view showing a first modification of semiconductor device A10, corresponding to Figure 7. In this modification, the shape of each protrusion 47 of semiconductor device A11 differs from that of semiconductor device A10. In this modification, the shape of each protrusion 47 is rectangular when viewed in the thickness direction z. Furthermore, the shape of each protrusion 47 is tapered, with the area of ​​the cross-section (xy plane) perpendicular to the thickness direction z decreasing towards the first side z1 in the thickness direction z. In this modification as well, when semiconductor device A11 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92, producing the same effect as semiconductor device A10.

[0079] Second Modification of the First Embodiment: Figure 21 is a bottom view showing a second modification of semiconductor device A10, corresponding to Figure 7. In this modification, the semiconductor device A12 differs from semiconductor device A10 in the number, shape, and arrangement of each protrusion 47. In this modification, semiconductor device A12 has two protrusions 47. Each protrusion 47 is located near both ends in the first direction x of the rectangular first resin surface 41 when viewed in the thickness direction z. When viewed in the thickness direction z, each protrusion 47 is an elongated rectangle that is longer in the second direction y. Furthermore, each protrusion 47 has a tapered shape in which the area of ​​the cross-section (xy plane) perpendicular to the thickness direction z decreases as it approaches the first side z1 in the thickness direction z. In this modification as well, when semiconductor device A12 is mounted on the circuit board 92, each protrusion 47 abuts against the circuit board 92, producing the same effect as semiconductor device A10.

[0080] Third Modification of the First Embodiment: Figure 22 is a bottom view showing a third modification of semiconductor device A10, corresponding to Figure 7. In this modification, the semiconductor device A13 differs from semiconductor device A10 in the number, shape, and arrangement of each protrusion 47. In this modification, semiconductor device A13 has two protrusions 47. Each protrusion 47 is located near both ends of the second direction y of the rectangular first resin surface 41 when viewed in the thickness direction z. When viewed in the thickness direction z, each protrusion 47 is an elongated rectangle that is longer in the first direction x. Furthermore, each protrusion 47 has a tapered shape in which the area of ​​the cross-section (xy plane) perpendicular to the thickness direction z decreases as it approaches the first side z1 in the thickness direction z. In this modification as well, when semiconductor device A13 is mounted on the circuit board 92, each protrusion 47 abuts against the circuit board 92, producing the same effect as semiconductor device A10.

[0081] Fourth Modification of the First Embodiment: Figure 23 is a bottom view showing a fourth modification of semiconductor device A10, corresponding to Figure 7. The semiconductor device A14 of this modification differs from semiconductor device A10 in the number, shape, and arrangement of the protrusions 47. In this modification, semiconductor device A14 has one protrusion 47. The protrusion 47 is located near the center of the first resin surface 41 when viewed in the thickness direction z. The shape of the protrusion 47 is rectangular when viewed in the thickness direction z. To prevent semiconductor device A14 from being mounted at an angle to the circuit board 92, the protrusion 47 extends to near the ends of the rectangular first resin surface 41 in the first direction x and second direction y when viewed in the thickness direction z. Furthermore, the shape of the protrusion 47 is tapered, with the area of ​​the cross-section (xy plane) perpendicular to the thickness direction z decreasing towards the first side z1 in the thickness direction z. In this modified form as well, when the semiconductor device A14 is mounted on the circuit board 92, each of the protrusions 47 contacts the circuit board 92, producing the same effect as the semiconductor device A10.

[0082] Fifth Modification of the First Embodiment: Figure 24 is a bottom view showing a fifth modification of semiconductor device A10, corresponding to Figure 7. The semiconductor device A15 of this modification differs from semiconductor device A10 in the number, shape, and arrangement of the protrusions 47. In this modification, semiconductor device A15 has one protrusion 47. The protrusion 47 is located near the center of the first resin surface 41 when viewed in the thickness direction z. The shape of the protrusion 47 when viewed in the thickness direction z is X-shaped. To prevent semiconductor device A15 from being mounted at an angle to the circuit board 92, the protrusion 47 extends to the vicinity of the four corners of the rectangular first resin surface 41 when viewed in the thickness direction z. Furthermore, the shape of the protrusion 47 is tapered, with the area of ​​the cross-section (xy plane) perpendicular to the thickness direction z decreasing towards the first side z1 in the thickness direction z. In this modified form as well, when the semiconductor device A15 is mounted on the circuit board 92, each of the protrusions 47 contacts the circuit board 92, producing the same effect as the semiconductor device A10.

[0083] Sixth Modification of the First Embodiment: Figure 25 is a bottom view showing a sixth modification of semiconductor device A10, corresponding to Figure 7. In this modification, the semiconductor device A16 differs from semiconductor device A10 in the number and arrangement of each protrusion 47. In this modification, semiconductor device A16 has nine protrusions 47. Each protrusion 47 is arranged in a grid pattern of three rows each in the first direction x and the second direction y when viewed in the thickness direction z. In this modification as well, when semiconductor device A16 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92, producing the same effect as semiconductor device A10.

[0084] As can be seen from the first to sixth modifications, the number, position, and shape of the protrusions 47 are not limited, and the protrusions 47 should be arranged so that the semiconductor devices A10 to A16 are not mounted at an angle to the circuit board 92.

[0085] Seventh Modification of the First Embodiment: Figure 26 is a cross-sectional view showing a seventh modification of semiconductor device A10, corresponding to Figure 12. In this modification, the semiconductor device A17 has the back surface 1112 of the first lead of the die pad portion 111 covered with sealing resin 40 and not exposed from the second resin surface 42. In this modification as well, when semiconductor device A17 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92, producing the same effect as semiconductor device A10.

[0086] Eighth Modification of the First Embodiment: Figure 27 is a cross-sectional view showing the eighth modification of semiconductor device A10, corresponding to Figure 12. In this modification, the semiconductor device A18 has the back surface 1112 of the first lead of the die pad portion 111 covered with sealing resin 40, and semiconductor elements 20 and 25 are mounted on the back surface 1112 of the first lead. In this modification as well, when semiconductor device A18 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92, producing the same effect as semiconductor device A10.

[0087] As can be seen from the seventh and eighth modifications, the back surface 1112 of the first lead of the die pad portion 111 may be exposed from the sealing resin 40 or covered by the sealing resin 40. In either case, when mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92, so that the height of the semiconductor devices A10 to A18 from the circuit board 92 after mounting can be suppressed.

[0088] Ninth Modification of the First Embodiment: Figure 28 is a cross-sectional view showing the ninth modification of semiconductor device A10, and corresponds to Figure 12. In this modification, the semiconductor device A19 differs from that of semiconductor device A10 in the shape of the first terminal portion 112, the second terminal portion 122, the third terminal portion 132, and the fourth terminal portion 142.

[0089] In the first terminal portion 112 of this modified example, the third portion 1123 extends from the second side x2 end in the first direction x of the first portion 1121 along the third resin surface 43 to the first side z1 in the thickness direction z. The second portion 1122 extends from the first side z1 end in the thickness direction z of the third portion 1123 along the first resin surface 41 to the first side x1 in the first direction x. In the second terminal portion 122 of this modified example, the sixth portion 1223 extends from the first side x1 end in the first direction x of the fourth portion 1221 along the fourth resin surface 44 to the first side z1 in the thickness direction z. The fifth portion 1222 extends from the first side z1 end in the thickness direction z of the sixth portion 1223 along the first resin surface 41 to the second side x2 in the first direction x. Similarly, although not shown in the figure, in the third terminal portion 132 of this modified example, the ninth portion 1323 extends from the second side x2 end in the first direction x of the seventh portion 1321 along the fourth resin surface 44 to the first side z1 in the thickness direction z. Also, the eighth portion 1322 extends from the first side z1 end in the thickness direction z of the ninth portion 1323 along the first resin surface 41 to the second side x2 in the first direction x. Also, in the fourth terminal portion 142 of this modified example, the twelfth portion 1423 extends from the second side x2 end in the first direction x of the tenth portion 1421 along the fourth resin surface 44 to the first side z1 in the thickness direction z. Also, the eleventh portion 1422 extends from the first side z1 end in the thickness direction z of the twelfth portion 1423 along the first resin surface 41 to the second side x2 in the first direction x.

[0090] In this modified configuration, when the semiconductor device A19 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92, producing the same effect as the semiconductor device A10. Furthermore, in this modified configuration, since the second part 1122, the fifth part 1222, the eighth part 1322, and the eleventh part 1422 extend inward in the first direction x, the mounting area (dimension in the first direction x) of the semiconductor device A19 can be reduced compared to the case where they extend outward in the first direction x (so-called gull-wing shape). As can be seen from this modified configuration, the shapes of the first terminal part 112, the second terminal part 122, the third terminal part 132, and the fourth terminal part 142 are not limited in any way.

[0091] Tenth Modification of the First Embodiment: Figure 29 is a cross-sectional view showing a tenth modification of semiconductor device A10, corresponding to Figure 12. The semiconductor device A110 of this modification differs from semiconductor device A10 in the configuration of the first terminal portion 112, the second terminal portion 122, the third terminal portion 132, and the fourth terminal portion 142.

[0092] In this modified example, the first terminal portion 112 has a first portion 1121 that does not penetrate the third resin surface 43, a third portion 1123 that extends within the sealing resin 40 in the thickness direction z, and a second portion 1122 that is exposed from the first resin surface 41. Similarly, the second terminal portion 122 has a fourth portion 1221 that does not penetrate the fourth resin surface 44, a sixth portion 1223 that extends within the sealing resin 40 in the thickness direction z, and a fifth portion 1222 that is exposed from the first resin surface 41. Although not shown in the figure, the third terminal portion 132 has a seventh portion 1321 that does not penetrate the fourth resin surface 44, a ninth portion 1323 that extends within the sealing resin 40 in the thickness direction z, and an eighth portion 1322 that is exposed from the first resin surface 41. Similarly, in the fourth terminal portion 142, the tenth portion 1421 does not penetrate the fourth resin surface 44, the twelfth portion 1423 extends within the sealing resin 40 in the thickness direction z, and the eleventh portion 1422 is exposed from the first resin surface 41.

[0093] In this modified configuration, when the semiconductor device A110 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92, producing the same effect as the semiconductor device A10. Furthermore, this modified configuration allows for a reduction in the mounting area (dimension in the first direction x) of the semiconductor device A110 compared to the case where the first terminal portion 112, second terminal portion 122, third terminal portion 132, and fourth terminal portion 142 penetrate the third resin surface 43 or the fourth resin surface 44 and protrude in the first direction x. As can be seen from this modified configuration, the configuration of the first terminal portion 112, second terminal portion 122, third terminal portion 132, and fourth terminal portion 142 is not limited in any way.

[0094] In the first embodiment, the shape of the protrusion 47 was described as a tapered shape in which the area of ​​the cross-section (xy plane) perpendicular to the thickness direction z decreases towards the first side z1 in the thickness direction z, but the embodiment is not limited to this. When the sealing resin 40 is formed by a method other than the method of forming recesses for forming the protrusion 47 in the mold during the formation of the sealing resin 40, the protrusion 47 may be formed in a shape other than a tapered shape.

[0095] Second Embodiment: Figures 30 to 32 show a semiconductor device A20 according to the second embodiment of the present disclosure. Figure 30 is a perspective view of the semiconductor device A20 and corresponds to Figure 3. Figure 31 is a bottom view of the semiconductor device A20 and corresponds to Figure 7. Figure 32 is a cross-sectional view of the semiconductor device A20 and corresponds to Figure 12. The semiconductor device A20 of this embodiment differs from the first embodiment in the configuration of the first terminal portion 112 of the first lead 11 and the shape of the sealing resin 40. The configuration and operation of other parts of this embodiment are the same as in the first embodiment. Note that the parts of the first embodiment and each of the modifications described above may be combined arbitrarily.

[0096] In this embodiment, the first terminal portion 112 of the first lead 11 is bent toward the first side z1 in the thickness direction z, and has one first portion 1121, two second portions 1122, and two third portions 1123.

[0097] The first part 1121 is connected to the die pad part 111 and extends from the die pad part 111 to the second side x2 in the first direction x, and in the illustrated example it is parallel to the xy plane. In this embodiment, the die pad part 111 is larger in the thickness direction z than the first part 1121. The first terminal part 112 in this embodiment has only one first part 1121. The shape of the first part 1121 is not limited in any way, and in the illustrated example it is rectangular when viewed along the thickness direction z. The first part 1121 is separated from the back surface 1112 of the first lead in the thickness direction z and is in contact with the main surface 1111 of the first lead in the illustrated example. One side of the first part 1121 is flush with the main surface 1111 of the first lead.

[0098] The two second parts 1122 are located on the first side z1 in the thickness direction z relative to the first part 1121. The two second parts 1122 are used when surface mounting the semiconductor device A10 onto a circuit board or the like. As shown in Figure 32, the second part 1122 has a terminal mounting surface 1122a. The terminal mounting surface 1122a faces the first side z1 in the thickness direction z and is located on the first terminal part 112, on the first side z1 in the thickness direction z. The terminal mounting surface 1122a faces the circuit board or the like when surface mounting the semiconductor device A20 onto a circuit board or the like. In the thickness direction z, the terminal mounting surface 1122a is located between the tip of each protrusion 47 and the first resin surface 41.

[0099] The two third parts 1123 are interposed between the first part 1121 and the two second parts 1122. The third parts 1123 extend from the first part 1121 to the first side z1 in the thickness direction z. In the illustrated example, the third parts 1123 are inclined with respect to the thickness direction z so as to extend outward from the first part 1121 in the second direction y. The shape of the third parts 1123 is not limited and in the illustrated example it is rectangular when viewed along the first direction x.

[0100] In this embodiment, the two second parts 1122 extend outward from the two third parts 1123 in the second direction y. Also, the two second parts 1122 are parallel to the second direction y. The two second parts 1122 do not protrude from the two third parts 1123 into the second side x2 of the first direction x. In the illustrated example, the two second parts 1122 and the two third parts 1123 are in the same position in the first direction x.

[0101] Furthermore, in this embodiment, as shown in Figures 30 and 32, the sealing resin 40 has grooves 49. The grooves 49 are recessed in the thickness direction z from the second resin surface 42 and extend along the second direction y. The grooves 49 reach the fifth resin surface 45 and the sixth resin surface 46.

[0102] In this embodiment as well, the sealing resin 40 has protrusions 47 that project from the first resin surface 41 toward the first side z1 in the thickness direction z. Each protrusion 47 includes a portion located toward the first side z1 in the thickness direction z relative to each terminal mounting surface 1122a, 1222a, 1322a, 1422a. Therefore, when the semiconductor device A20 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92. As a result, the positions of the second resin surface 42 and the back surface 1112 of the first lead of the die pad portion 111 in the thickness direction z are determined by the dimension of the sealing resin 40 in the thickness direction z. Therefore, regardless of the amount of solder used during mounting or the spread of solder after reflow, the semiconductor device A20 can suppress variations in height from the circuit board 92 after mounting. Furthermore, the semiconductor device A20 has a configuration common to the semiconductor device A10 and thus achieves the same effects as the semiconductor device A10.

[0103] Furthermore, according to this embodiment, the third portion 1123 is parallel to the yz plane, and the second portion 1122 does not protrude from the third portion 1123 in the first direction x. Therefore, the semiconductor device A10 can reduce the dimension in the first direction x compared to the case where the second portion 1122 protrudes from the third portion 1123 in the first direction x. Also, since the two second portions 1122 extend outward from the third portion 1123 in the second direction y, the semiconductor device A20 can have increased mounting strength. In addition, according to this embodiment, grooves 49 are formed in the sealing resin 40. This makes it possible to extend the distance along the surface of the sealing resin 40 (hereinafter referred to as creepage distance) from the back surface 1112 of the first lead to the second lead 12 (fourth portion 1221), the third lead 13 (seventh portion 1321), and the fourth lead 14 (tenth portion 1421). As can be understood from this embodiment, the configuration of the first terminal portion 112 is not limited in any way.

[0104] Third Embodiment: Figures 33 to 36 show a semiconductor device according to the third embodiment of the present disclosure. Figure 33 is a perspective view of the semiconductor device A30 and corresponds to Figure 3. Figure 34 is a perspective view of the main part of the semiconductor device A30 and corresponds to Figure 5. Figure 35 is a bottom view of the semiconductor device A30 and corresponds to Figure 7. Figure 36 is a cross-sectional view of the semiconductor device A30 and corresponds to Figure 12. The semiconductor device A30 of this embodiment differs from the first embodiment mainly in the configuration of the heat dissipation portion including the first lead 11. Also, the semiconductor device A30 does not include the semiconductor element 25. The configuration and operation of other parts of this embodiment are the same as in the first embodiment. Note that the parts of the first and second embodiments and each of the modifications described above may be combined arbitrarily.

[0105] In this embodiment, the semiconductor device A30 further comprises an insulating substrate 50 and a heat sink 60. The insulating substrate 50 and the heat sink 60 are components that replace the die pad portion 111 in the first embodiment. In this embodiment, the first lead 11 has a joint portion 113 instead of the die pad portion 111. As shown in Figure 36, the joint portion 113 has a joint portion main surface 1131 and a joint portion back surface 1132. The joint portion main surface 1131 is the surface facing the first side z1 in the thickness direction z. The joint portion back surface 1132 is the surface facing the second side z2 in the thickness direction z. The joint portion back surface 1132 is joined to the insulating substrate 50 via a conductive bonding material 19. The conductive bonding material 19 is, for example, solder. In addition, the conductive bonding material 19 may be silver (Ag) paste, calcined silver, etc.

[0106] The insulating substrate 50 is located on the second side z2 in the thickness direction z with respect to the joint portion 113 of the first lead 11. In this embodiment, the insulating substrate 50 is made of, for example, a DBC (Direct Bonded Copper) substrate. The insulating substrate 50 includes an insulating layer 51, a first metal layer 52, and a second metal layer 53. The insulating substrate 50 is covered with a sealing resin 40, except for a portion of the second metal layer 53. The insulating substrate 50 is rectangular in shape when viewed in the thickness direction z.

[0107] The insulating layer 51 includes a portion interposed between the first metal layer 52 and the second metal layer 53 in the thickness direction z. The insulating layer 51 is made of a material that has insulating properties and relatively high thermal conductivity. The insulating layer 51 is made of ceramics containing, for example, aluminum nitride (AlN). In addition to ceramics, the insulating layer 51 may also be made of an insulating resin sheet. The insulating layer 51 is rectangular in shape when viewed in the thickness direction z.

[0108] The first metal layer 52 is laminated on the first side z1 in the thickness direction z relative to the insulating layer 51. The composition of the first metal layer 52 includes copper (Cu). The first metal layer 52 is rectangular in shape when viewed in the thickness direction z. In the illustrated example, the periphery of the first metal layer 52 overlaps with the periphery of the insulating layer 51 when viewed in the thickness direction z. However, unlike the illustrated example, the first metal layer 52 may be surrounded by the periphery of the insulating layer 51 when viewed in the thickness direction z. The first metal layer 52 is conductively bonded to the back surface 1132 of the joint 113 via a conductive bonding material 19. A semiconductor element 20 is mounted on the first metal layer 52.

[0109] The second metal layer 53 is laminated on the second side z2 in the thickness direction z relative to the insulating layer 51. The composition of the second metal layer 53 includes copper. The second metal layer 53 is rectangular when viewed in the thickness direction z. In the illustrated example, the periphery of the second metal layer 53 overlaps with the periphery of the insulating layer 51 when viewed in the thickness direction z. However, unlike the illustrated example, the second metal layer 53 may be surrounded by the periphery of the insulating layer 51 when viewed in the thickness direction z.

[0110] The heat sink 60 is located on the second side z2 in the thickness direction z with respect to the insulating substrate 50 (second metal layer 53). The heat sink 60 is made of a material with high thermal conductivity. For example, the heat sink 60 is made of a metal plate containing copper in its composition. The heat sink 60 is rectangular in shape when viewed in the thickness direction z. The heat sink 60 has a main surface 601 and a back surface 602. The main surface 601 is the surface facing the first side z1 in the thickness direction z. The back surface 602 is the surface facing the second side z2 in the thickness direction z. The main surface 601 is bonded to the second metal layer 53 of the insulating substrate 50 via a bonding material 59. The bonding material 59 may be conductive or insulating, but for example, solder is used. The back surface 602 is exposed from the second resin surface 42 of the sealing resin 40. The back surface 602 of the heat sink is surrounded by the second resin surface 42 when viewed in the thickness direction z. The insulating substrate 50 extends beyond the heat sink 60 in the second side x2 of the first direction x when viewed in the thickness direction z. In this embodiment, the joint portion 113, the insulating substrate 50, and the heat sink 60 function as the die pad portion 111 in the first embodiment.

[0111] Furthermore, in this embodiment, the configuration of the first terminal portion 112 of the first lead 11 is the same as in the second embodiment. In this embodiment, the first portion 1121 of the first terminal portion 112 is covered by a resin projection 48 of the sealing resin 40 that protrudes from the third resin surface 43 toward the second side x2 in the first direction x. Note that the sealing resin 40 does not have a resin projection 48, and the first portion 1121 does not have to be covered by the sealing resin 40.

[0112] Furthermore, in this embodiment, the semiconductor device A30 does not include the semiconductor element 25, and the orientation of the semiconductor element 20 differs from that of the first embodiment. Also, the connecting member 31 that is electrically joined to the first electrode 201 of the semiconductor element 20 and the second lead main surface 1211 of the second pad portion 121 of the second lead 12 is a metal plate.

[0113] In this embodiment as well, the sealing resin 40 has protrusions 47 that project from the first resin surface 41 toward the first side z1 in the thickness direction z. Each protrusion 47 includes a portion located toward the first side z1 in the thickness direction z relative to each terminal mounting surface 1122a, 1222a, 1322a, 1422a. Therefore, when the semiconductor device A30 is mounted on the circuit board 92, each protrusion 47 contacts the circuit board 92. As a result, the positions of the second resin surface 42 and the back surface 1112 of the first lead of the die pad portion 111 in the thickness direction z are determined by the dimension of the sealing resin 40 in the thickness direction z. Therefore, regardless of the amount of solder used during mounting or the way the solder spreads after reflow, the semiconductor device A30 can suppress variations in height from the circuit board 92 after mounting. Furthermore, the semiconductor device A30 has a configuration common to the semiconductor device A10 and therefore achieves the same effects as the semiconductor device A10.

[0114] Furthermore, according to this embodiment, the insulating substrate 50 is interposed between the joint portion 113 of the first lead 11 and the heat sink 60. The insulating layer 51 of the insulating substrate 50 has insulating properties. As a result, the semiconductor device A30 can ensure insulation between the heat dissipation surface (the back surface 602 of the heat sink 60) facing the second side z2 in the thickness direction z and the semiconductor element 20. Therefore, the semiconductor device A30 can ensure insulation between the heat sink 91 and the semiconductor element 20 without interposing an insulating material between the heat dissipation surface and the heat sink 91. In addition, according to this embodiment, the first portion 1121 of the first terminal portion 112 is covered by a resin protrusion 48 of the sealing resin 40. As a result, the semiconductor device A30 can increase the creepage distance between the heat sink 91, which is positioned opposite the heat dissipation surface (the back surface 602 of the heat sink 60), and the first terminal portion 112. This is preferable in preventing surface discharge between the first terminal portion 112 and the heat sink 91 that is enclosed.

[0115] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0116] This disclosure includes configurations relating to the following appendices: Appendix 1. A semiconductor device comprising: a semiconductor element (20); a plurality of leads (11 to 14) that conduct to the semiconductor element; and a sealing resin (40) that covers the semiconductor element and has a resin back surface (41) facing a first side (z1) in the thickness direction (z), wherein each of the plurality of leads comprises a pad portion (111) covered by the sealing resin and a terminal portion (112) exposed from the sealing resin, each terminal portion comprises a terminal mounting surface (1122a) facing the first side in the thickness direction, and the sealing resin further comprises a convex portion (47) protruding from the resin back surface to the first side in the thickness direction, the convex portion includes a portion located on the first side in the thickness direction from each terminal mounting surface. Appendix 2. The semiconductor device according to Appendix 1, wherein each terminal mounting surface is located on the first side in the thickness direction from the resin back surface. Appendix 3. The semiconductor device according to Appendix 1 or 2, wherein the die pad portion (111), which is a pad portion of one of the plurality of leads, has a die pad main surface (1111) facing the first side in the thickness direction and a die pad back surface (1112) facing the second side (z2) in the thickness direction. Appendix 4. The semiconductor device according to Appendix 3, wherein the semiconductor element is mounted on the die pad main surface. Appendix 5. The semiconductor device according to Appendix 3 or 4, wherein the sealing resin further has a resin main surface (42) facing the second side in the thickness direction, and the die pad back surface is exposed from the resin main surface. Appendix 6. The semiconductor device according to any one of Appendix 3 to 5, wherein one of the plurality of leads is insulated from the die pad portion. Appendix 7. The semiconductor device according to any one of Appendix 1 to 6, wherein the sealing resin further has resin side surfaces (43, 44) facing the first direction perpendicular to the thickness direction, and each terminal portion protrudes from the resin side surfaces. Appendix 8. The semiconductor device according to any one of the appendices 1 to 7, wherein the dimension (H) of the protrusion in the thickness direction is 0.05 mm or more and 0.5 mm or less. Appendix 9. The semiconductor device according to appendice 8, wherein the dimension of the protrusion in the thickness direction is 0.1 mm or more and 0.2 mm or less.Note 10. (Fourth modified example of the first embodiment (Figure 23), etc.) The semiconductor device according to any one of Notes 1 to 9, wherein the protrusion is located near the center of the back surface of the resin when viewed in the thickness direction. Note 11. (Second modified example of the first embodiment (Figure 21), etc.) The semiconductor device according to any one of Notes 1 to 9, wherein the protrusion includes a first protrusion and a second protrusion, and the first protrusion and the second protrusion are located near both ends of the back surface of the resin when viewed in the thickness direction. Note 12. The semiconductor device according to any one of Notes 1 to 9, wherein the back surface of the resin is rectangular when viewed in the thickness direction, and the protrusion includes a first to a fourth protrusion, and the first to a fourth protrusion are located near the four corners of the back surface of the resin when viewed in the thickness direction. Note 13. The semiconductor device according to any one of Notes 1 to 12, wherein the shape of the protrusion is circular when viewed in the thickness direction. Note 14. (First modified example of the first embodiment (Figure 20), etc.) A semiconductor device according to any one of appendices 1 to 12, wherein the shape of the protrusion is rectangular when viewed in the thickness direction. Appendix 15. A semiconductor device according to any one of appendices 1 to 14, wherein the area of ​​the cross-section of the protrusion perpendicular to the thickness direction becomes smaller as it approaches the first side in the thickness direction.

[0117] A10-A19, A110, A20, A30: Semiconductor device, 10: Conductive member, 11: First lead, 12: Second lead, 13: Third lead, 14: Fourth lead, 19: Conductive bonding material, 20, 25: Semiconductor element, 29: Bonding layer, 31-34: Connecting member, 40: Sealing resin, 41: First resin surface, 42: Second resin surface, 43: Third resin surface, 44: Fourth resin surface, 45: Fifth resin surface, 46: Sixth resin surface, 47: Protrusion, 48: Resin protrusion, 49: Groove, 50: Insulating substrate, 51: Insulating layer, 52: 1: Metal layer, 53: Second metal layer, 59: Bonding material, 60: Heat sink, 91: Heat sink, 92: Circuit board, 95: Onboard charger, 96: Storage battery, 97: Drive system, 111: Die pad section, 112: First terminal section, 113: Bonding section, 121: Second pad section, 122: Second terminal section, 131: Third pad section, 132: Third terminal section, 141: Fourth pad section, 142: Fourth terminal section, 201: First electrode, 202: Second electrode, 203: Third electrode, 205: Semiconductor layer, 251: First electrode, 252 : Second electrode, 255: Semiconductor layer, 601: Main surface of heat sink, 602: Back surface of heat sink, 919: Sheet material, 921: Solder, 923: Wiring pattern, 971: Inverter, 972: Drive source, 1111: Main surface of first lead, 1112: Back surface of first lead, 1113: Side surface of first lead, 1114: First intermediate surface, 1116: Second side surface of first lead, 1117: Contact avoidance surface, 1121: First part, 1122: Second part, 1122a: Terminal mounting surface, 1123: Third part, 1131: Main surface of joint, 113 2: Back surface of joint, 1211: Main surface of second lead, 1212: Back surface of second lead, 1221: Fourth part, 1222: Fifth part, 1222a: Terminal mounting surface, 1223: Sixth part, 1311: Main surface of third lead, 1312: Back surface of third lead, 1321: Seventh part, 1322: Eighth part, 1322a: Terminal mounting surface, 1323: Ninth part, 1411: Main surface of fourth lead, 1412: Back surface of fourth lead, 1421: Tenth part, 1422: Eleventh part, 1422a: Terminal mounting surface, 1423: Twelfth part, V: Vehicle

Claims

1. A semiconductor device comprising: a semiconductor element; a plurality of leads that conduct to the semiconductor element; and a sealing resin that covers the semiconductor element and has a resin back surface facing a first side in the thickness direction, wherein each of the plurality of leads comprises a pad portion covered by the sealing resin and a terminal portion exposed from the sealing resin, each terminal portion has a terminal mounting surface facing the first side in the thickness direction, and the sealing resin further comprises a convex portion that protrudes from the resin back surface toward the first side in the thickness direction, the convex portion includes a portion located toward the first side in the thickness direction from each terminal mounting surface.

2. The semiconductor device according to claim 1, wherein each terminal mounting surface is located on the first side in the thickness direction from the back surface of the resin.

3. The semiconductor device according to claim 1 or 2, wherein the die pad portion, which is a pad portion of any of the plurality of leads, has a die pad main surface facing the first side in the thickness direction and a die pad back surface facing the second side in the thickness direction.

4. The semiconductor device according to claim 3, wherein the semiconductor element is mounted on the main surface of the die pad.

5. The semiconductor device according to claim 3 or 4, wherein the sealing resin further has a resin main surface facing the second side in the thickness direction, and the back surface of the die pad is exposed from the resin main surface.

6. The semiconductor device according to any one of claims 3 to 5, wherein one of the plurality of leads is insulated from the die pad portion.

7. The semiconductor device according to any one of claims 1 to 6, wherein the sealing resin further has resin sides facing a first direction perpendicular to the thickness direction, and each terminal portion protrudes from the resin side.

8. The semiconductor device according to any one of claims 1 to 7, wherein the dimension of the protrusion in the thickness direction is 0.05 mm or more and 0.5 mm or less.

9. The semiconductor device according to claim 8, wherein the dimension of the protrusion in the thickness direction is 0.1 mm or more and 0.2 mm or less.

10. The semiconductor device according to any one of claims 1 to 9, wherein the protrusion is located near the center of the back surface of the resin when viewed in the thickness direction.

11. The semiconductor device according to any one of claims 1 to 9, wherein the protrusion includes a first protrusion and a second protrusion, and the first protrusion and the second protrusion are respectively located near both ends of the back surface of the resin when viewed in the thickness direction.

12. The semiconductor device according to any one of claims 1 to 9, wherein, when viewed in the thickness direction, the back surface of the resin is rectangular, the protrusions include a first to a fourth protrusion, and the first to a fourth protrusions are respectively located near the four corners of the back surface of the resin when viewed in the thickness direction.

13. The semiconductor device according to any one of claims 1 to 12, wherein the shape of the protrusion is circular when viewed in the thickness direction.

14. The semiconductor device according to any one of claims 1 to 12, wherein the shape of the protrusion is rectangular when viewed in the thickness direction.

15. The semiconductor device according to any one of claims 1 to 14, wherein the area of ​​the cross-section of the protrusion perpendicular to the thickness direction decreases as it approaches the first side in the thickness direction.

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