Substrate treatment apparatus and substrate treatment method

Abstract

The present invention relates to a substrate treatment method, more specifically to a substrate treatment method for etching a thin film formed on a substrate. The present invention relates to a substrate treatment apparatus for etching a substrate (10) comprising a thin film (12) comprising copper (Cu) and a PR mask (11) provided on the thin film (12), the substrate treatment apparatus comprising: a treatment chamber (100) forming a sealed treatment space (S); a power source unit (200) which applies source power to generate etching gas plasma in the treatment space (S); a bias power supply unit (300) which supports the substrate (10) in the treatment space (S) and applies bias power; and a control unit for controlling the source and bias power to control etching of the thin film (12) and PR mask (11), wherein the control unit exerts control so that the source power is less than the bias power.

Description

Substrate processing apparatus and substrate processing method

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method for performing plasma etching on a substrate.

[0002] Recently, research on copper (Cu) wiring has been actively underway as a technology that can maintain high performance while reducing line width and thickness by lowering the resistance of wiring formed on thin films.

[0003] More specifically, in the case of wiring using copper (Cu), compared to conventional aluminum (Al), it has lower resistance and higher conductivity, resulting in less power loss and enabling the production of high-efficiency products. Additionally, it has the advantage of excellent durability due to enhanced contact stability caused by high heat resistance and corrosion resistance.

[0004] Accordingly, in line with the recent technological trend of increasingly finer line widths, it is possible to implement low-power, high-performance wiring using copper (Cu) that is equivalent to or superior to conventional aluminum (Al) wiring while reducing the line width and thickness.

[0005] However, in order to implement copper (Cu) wiring, a copper (Cu) thin film must be etched according to a preset pattern, and conventionally, etching was performed using halogen elements such as fluorine (F) and chlorine (Cl), but there is a problem in that a high-temperature environment of 400°C or higher must be created to prevent redeposition of the etched copper (Cu) and to discharge it in the form of gas.

[0006] In this case, there is a problem in that the PR mask cannot be used and is limited to a hard mask because burning occurs, such as damage to the PR mask, depending on the high-temperature environment.

[0007] In addition, despite the composition of a conventional high-temperature environment, the etched copper (Cu) cannot be discharged in the form of gas due to redeposition, so it is performed as a wet etch. In the case of wet etch, it is difficult to achieve fine line widths, and there are problems with high costs due to the use of expensive etchant and treatment costs resulting from wastewater generation.

[0008] The objective of the present invention is to provide a substrate processing apparatus and a substrate processing method for performing plasma dry etching on a copper (Cu) thin film in order to solve the above-mentioned problems.

[0009] The present invention is created to achieve the above-mentioned purpose of the present invention. The present invention discloses a substrate processing apparatus for etching a substrate (10) comprising a thin film (12) containing copper (Cu) and a PR mask (11) provided on the thin film (12), comprising: a process chamber (100) forming a sealed processing space (S); a source power unit (200) to which source power is applied to generate a plasma of etching gas in the processing space (S); a bias power unit (300) to which bias power is applied to support the substrate (10) in the processing space (S); and a control unit that controls the source power and the bias power to control the etching of the thin film (12) and the PR mask (11), wherein the control unit controls the source power to be smaller than the bias power.

[0010] The above control unit can control the ratio of the source power to the bias power to be 1:2 or less.

[0011] The above etching gas may be an inert gas.

[0012] The above etching gas may include at least one of Ar, He, Kr, N2, and Xe.

[0013] The above PR mask (11) may include a polymer compound.

[0014] The above-mentioned processing space (S) may additionally include a pressure control unit that controls the pressure to 50 mTorr or less.

[0015] The above control unit can control the bias power to be 1 kW or more and 40 kW or less.

[0016] The above control unit can control the bias power to be 18kW or more and 23kW or less.

[0017] The above control unit can control the source power to be 6kW or more and 9kW or less.

[0018] The above control unit can control the source power to be 2kW or more and 60kW or less.

[0019] The temperature of the above processing space (S) can be maintained at 20℃ or higher and 120℃ or lower.

[0020] The above process chamber (100) includes a chamber body (110) having an opening (101) formed on the upper side, and a window assembly (120) installed on the chamber body (110) to cover the opening (101), and the source power unit (200) may include at least one antenna unit (210) installed on the upper side of the window assembly (120) to form an induced electric field in the processing space (S).

[0021] The source power unit (200) may include a CCP electrode to which RF power or DC power is applied as the source power.

[0022] In addition, the present invention is a substrate processing method for etching a substrate (10) through an etching gas plasma according to source power and bias power, comprising: a substrate placement step (S100) of placing the substrate (10) in a process chamber (100); and an etching step (S200) of etching a thin film (12) containing copper (Cu) provided on the substrate (10) and a PR mask (11) provided on the thin film (12) through an etching gas plasma, wherein the applied source power in the etching step (S200) can be maintained at a level smaller than the bias power.

[0023] The method may include a conductive layer forming step (S300) for forming the thin film (12) containing copper (Cu) before or after the substrate placement step (S100).

[0024] After the above-mentioned conductive layer formation step (S300), a mask formation step (S400) for forming the PR mask (11) on the thin film (12) may be included.

[0025] After the above etching step (S200), a mask removal step (S500) for removing the PR mask (11) may be additionally included.

[0026] The above etching step (S200) can maintain the ratio of the source power to the bias power at 1:2 or less.

[0027] The above etching gas may include at least one of Ar, He, Kr, N2, and Xe.

[0028] The above PR mask (11) may include a polymer compound.

[0029] The above etching step (S200) may apply the bias power at a level of 1 kW or more and 40 kW or less.

[0030] The above etching step (S200) may apply the source power at a level of 2kW or more and 60kW or less.

[0031] The substrate processing apparatus and substrate processing method according to the present invention have the advantage of being able to form an appropriate copper (Cu) wiring pattern by performing plasma dry etching on a copper (Cu) thin film by appropriately controlling the ratio of source power and bias power.

[0032] Through this, the substrate processing apparatus and substrate processing method according to the present invention have the advantage of enabling the production of products with enhanced low power consumption, high efficiency, and durability even at finer line widths and thicknesses compared to conventional Al wiring by applying Cu wiring.

[0033] In addition, the substrate processing apparatus and substrate processing method according to the present invention have the advantage of enabling dry etching of a copper (Cu) thin film using a PR mask without damaging the PR mask, as dry etching of the copper (Cu) thin film is possible at a relatively low temperature by appropriately controlling the ratio of source power and bias power.

[0034] Thus, the substrate processing apparatus and substrate processing method according to the present invention have the advantage of overcoming the difficulty of realizing fine line widths due to conventional wet etching and reducing related environmental costs, thereby increasing the efficiency of substrate processing.

[0035] In particular, the substrate processing apparatus and substrate processing method according to the present invention have the advantage of being able to optimize the degree of etching of the PR mask and the Cu thin film by appropriately adjusting the ratio between the source power and the bias power.

[0036] FIG. 1 is a drawing showing a substrate processing apparatus according to the present invention.

[0037] FIG. 2 is a drawing showing the appearance of a substrate to be processed according to the present invention before etching.

[0038] Figure 3 is a diagram showing etching performed on a substrate to be processed according to Figure 2 using a source power of 18 kW and a bias power of 18 kW.

[0039] Figure 4 is a diagram showing etching performed on a substrate to be processed according to Figure 2 using a source power of 9 kW and a bias power of 18 kW.

[0040] FIGS. 5A and FIGS. 5B are graphs showing the etching rate according to the power ratio and the pressure of the processing space for a substrate to be processed according to FIG. 2, FIG. 5A is a graph showing the etching rate of a thin film according to the ratio of source power to bias power, and FIG. 5B is a graph showing the etching rate of a thin film according to the pressure of the processing space.

[0041] FIG. 6 is a flowchart showing a substrate processing method according to the present invention.

[0042] Hereinafter, the substrate processing apparatus and substrate processing method according to the present invention will be described with reference to the attached drawings.

[0043] First, a substrate processing apparatus for performing the substrate processing method according to the present invention will be described as follows based on FIG. 1.

[0044] A substrate processing apparatus according to the present invention comprises, as shown in FIG. 1, a process chamber (100) forming a sealed processing space (S); a source power supply unit (200) to which source power is applied to generate a plasma of etching gas in the processing space (S); a bias power supply unit (300) to which bias power is applied to support the substrate (10) in the processing space (S); and a control unit that controls the source power and the bias power to control etching of the thin film (12) and the PR mask (11).

[0045] In addition, the substrate processing device according to the present invention may further include a gas injection unit (400) installed in the process chamber (100) for injecting etching gas into the processing space (S).

[0046] Here, the substrate (10) as the target for processing according to the present invention is configured to perform substrate processing such as deposition, etching, and heat treatment, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate can be applied.

[0047] Additionally, the substrate (10) includes a thin film (12) containing copper (Cu) and a PR mask (11) provided on the thin film (12).

[0048] For example, the substrate (10) may be configured such that a thin film (12) containing copper (Cu) is formed so that wiring through copper (Cu) is formed on a lower film (13), and a mask is formed so that etching for forming a preset pattern is performed on the thin film (12).

[0049] That is, the thin film (12) can be formed through a conductive material such as metal as a conductive layer for forming wiring, and can be formed of copper (Cu) for the formation of a fine pattern and low resistance characteristics.

[0050] At this time, the above mask can be applied as a PR mask (11), which is a photoresist mask.

[0051] For example, the PR mask (11) is a mask composed of metal oxides and may include at least one of Mo, Ti, Cr, Be and Si, thereby forming a copper (Cu) wiring pattern by removing it through subsequent stripping or ashing.

[0052] In addition, as another example, the PR mask (11) may be composed of a polymer compound including an organic compound, and is applicable to all PR masks (11) of polymer compounds disclosed in the prior art, such as polyethylene and polypropylene.

[0053] Meanwhile, the substrate processing apparatus and substrate processing method according to the present invention can pattern a thin film (12) containing Cu through plasma dry etching using a etching gas.

[0054] As an etching gas for this purpose, an inert gas may be used, and may include, for example, at least one of Ar, He, Kr, N2, and Xe.

[0055] The above process chamber (100) is configured to form a sealed processing space (S), and various configurations are possible.

[0056] For example, the process chamber (100) may include a chamber body (110) having an opening (101) formed on the upper side, and a window assembly (120) installed on the chamber body (110) to cover the opening (101).

[0057] Additionally, the process chamber (100) may include a lead frame portion (130) installed along the edge of the opening (101) to support a window assembly (120), and a cover member (140) installed on the lead frame portion (130) to form a space for installing an antenna portion (210) to be described later inside.

[0058] The above chamber body (110) is configured such that an opening (101) is formed on the upper side, and various configurations are possible.

[0059] At this time, the chamber body (110) may be configured in a rectangular shape as a planar shape corresponding to the shape of the substrate (10) to be processed, as a configuration for forming a processing space (S).

[0060] Additionally, the chamber body (110) may have one or more gates (102) formed therein for the input and output of a substrate (10), and may have a pressure control unit, a vacuum pump (not shown), and an exhaust pipe (not shown) connected thereto formed therein to control the pressure of the processing space (S) and remove by-products, as described later.

[0061] The above chamber body (110) may have an opening (101) with an open top, and a window assembly (120) may be installed by being supported on the lead frame (130) while the lead frame (130) is installed at the edge of the opening (101) to form a sealed processing space (S). As another example, the lead frame (130) may be omitted and the opening (101) may be covered by the window assembly (120) alone.

[0062] The lead frame portion (130) can be configured in various ways as it is installed along the edge of the opening (101) to support the window assembly (120).

[0063] For example, the lead frame portion (130) may include a lead frame (131) installed at the edge of the opening (101) and a support frame (132) installed on the lower surface of the lead frame (131) to support the window assembly (120).

[0064] At this time, the lead frame (131) may have a rectangular planar shape corresponding to the window assembly (120) described later, and may have a step formed on its inner surface to support the window (121) described later, thereby supporting a portion of the edge of the window (121).

[0065] The support frame (132) is provided to protrude from the lower part of the lead frame (131) toward the inner side and can support the window assembly (120) by supporting the outer edge of the protective plate (123) at the lower part of the window (121) described later.

[0066] At this time, the support frame (132) may be composed of the same material as the window (121) or a different material, and may be made of ceramic as the same dielectric as the window (121) to prevent damage to the lead frame (131) caused by the plasma formed in the lower processing space (S).

[0067] The above window assembly (120) is supported by a lead frame portion (130) and installed in the chamber body (110), and is configured to cover the opening (101), and various configurations are possible.

[0068] That is, the above window assembly (120) may be configured to include a dielectric material such as ceramic, and to transmit and control a high-frequency electromagnetic field formed through the source power supply unit (200) described later to the processing space (S).

[0069] Additionally, the window assembly (120) can be installed to cover the opening (101) and placed between the processing space (S) and the antenna unit (210) to form an induced electric field in the processing space (S) by the source power unit (200) described later.

[0070] For example, the window assembly (120) may include a window frame (122) that forms a plurality of installation openings together with the aforementioned lead frame portion (130), and a plurality of windows (121) that are installed in the plurality of installation openings formed through the window frame (122).

[0071] Additionally, the window assembly (120) may further include a protective plate (123) that is positioned below the window (121) and supported by a support frame (132) to protect the window (121) from plasma within the processing space (S).

[0072] The above window frame (122) is configured to support the window (121) together with the lead frame part (130), and may be configured to have sufficient rigidity and have a gas passage formed inside so as to enable the transmission of gas through the gas injection part (400) described later.

[0073] For example, the window frame (122) may be constructed of metal and installed across the lead frame portion (130) forming the outermost edge to form a grid structure of installation openings for arranging a plurality of windows (121) inside, and may be constructed of aluminum, aluminum alloy, etc.

[0074] The above window (121) may be configured to transmit and control an induced electric field formed through an antenna part (210) that is installed in an installation opening formed through a window frame (122).

[0075] For example, the above window (121) may be a dielectric window represented by ceramic, a metal window, etc.

[0076] Meanwhile, the above window (121) may be equipped with a separate heater or a gas injection unit (400) described later at the bottom to deliver etching gas.

[0077] The above protective plate (123) may be configured to be positioned below the window (121) and provided in multiple numbers corresponding to the installation opening to prevent damage to the window (121) caused by plasma formed in the processing space (S).

[0078] At this time, the protective plate (123) may be installed by being supported on the aforementioned support frame (132), and, for example, may be positioned so that its edge is supported on the support frame (132) installed at the bottom of the lead frame (131) and the window frame (122).

[0079] Accordingly, by covering the planar processing space (S) through the protective plate (123) and the support frame (132), damage to the lead frame part (130), window (121), and window frame (122) caused by the plasma formed in the processing space (S) through the protective plate (123) and the support frame (132) can be prevented.

[0080] The above cover member (140) may be configured to be installed on the lead frame portion (130) to form a space in which the antenna portion (210) described later is installed, and more specifically, may be arranged to cover the lead frame portion (130).

[0081] Meanwhile, the aforementioned process chamber (100) was described based on the Inductively Coupled Plasma (ICP) method as a method for forming plasma, but in the case of the Capacitively Coupled Plasma (CCP) method, the aforementioned window assembly (120) may be omitted and the opening (101) may be covered through the lead frame part (130).

[0082] The above source power supply unit (200) is configured such that source power is applied to generate plasma of etching gas in the processing space (S), and various configurations are possible.

[0083] For example, the source power unit (200) may be a source power (220) that supplies source power to a CCP electrode (not shown) and an upper electrode formed on the upper side of the processing space (S) as part of the CCP configuration.

[0084] At this time, the source power supply unit (200) may apply RF power or DC power to the CCP electrode as source power.

[0085] For example, the above CCP electrode can be configured to be a shower head formed at a position opposite to the bias power supply unit (300) described later and spraying etching gas into the processing space (S), with a source power supply (220) applied.

[0086] In addition, as another example, the source power unit (200) may include at least one antenna unit (210) installed on the upper side of the window assembly (120) as shown in FIG. 1 to form an induced electric field in the processing space (S), and a source power unit (220) that supplies source power to the antenna unit (210).

[0087] That is, the source power supply unit (200) is configured to apply high-frequency RF power to form an induced electric field in the processing space (S), and may include an antenna unit (210) arranged in a preset pattern on the upper side of the window assembly (120), and a source power supply (220) that supplies source power as high-frequency power to the antenna unit (210).

[0088] The above bias power supply unit (300) supports the substrate (10) in the processing space (S) and is configured to apply bias power, and various configurations are possible.

[0089] For example, the bias power supply unit (300) may include, as shown in FIG. 1, a support plate (310) for supporting a substrate (10), a bias electrode (330) provided within the support plate (310) to which bias power is applied, a support shaft (320) for supporting the support plate (310), and a bias power supply (340) connected to the bias electrode (330) to transmit bias power.

[0090] That is, the bias power supply unit (300) can apply RF bias to the bias electrode (330) to control the plasma in the processing space (S) and accelerate the dissociated etching gas to improve or control reactivity.

[0091] At this time, the bias electrode (330) is electrically connected to the bias power source (340) and can receive bias power as high frequency or low frequency RF power.

[0092] Additionally, the support plate (310) may be configured to support the substrate (10) and have a heater inside to form a temperature atmosphere for the substrate (10) and the processing space (S), and furthermore, may be configured as an electrostatic chuck in which chucking is performed on the substrate (10) to fix and support the substrate (10) in a fixed position.

[0093] In this case, the bias electrode (330) can function as a bias electrode by applying bias power as an electrostatic electrode.

[0094] The above gas injection unit (400) is configured to be installed in the process chamber (100) and to inject etching gas into the processing space (S), and various configurations are possible.

[0095] For example, the gas injection unit (400) may be configured to penetrate the window frame (122) and inject etching gas delivered from the outside into the processing space (S).

[0096] Meanwhile, as another example, the gas injection unit (400) may be configured to be positioned below the window (121) and to inject etching gas delivered through the window (121) into the processing space (S).

[0097] In addition, the substrate processing device according to the present invention may include a pressure control unit for controlling the pressure of the processing space (S), and the pressure control unit may include a vacuum pump and various valve configurations connected to the exhaust port of the aforementioned gas injection unit (400) and the process chamber (100) to control the amount of exhaust.

[0098] That is, the pressure control unit can control the pressure of the processing space (S) by appropriately adjusting the flow rate of the gas supplied through the gas injection unit (400), or by controlling the pressure of the processing space (S) by adjusting the exhaust amount through the vacuum pump and valve, or by a combination of these.

[0099] At this time, the pressure control unit can control the pressure of the processing space (S) to 50 mTorr or less while etching is performed using etching gas.

[0100] Meanwhile, when dry patterning of the Cu conductive layer is performed using plasma-generated etching gas, the PR mask (11) may also be etched during the process, so it is essential to maintain the PR mask (11) at a certain level and control for precise patterning of the thin film (12).

[0101] For example, in the substrate processing device according to the present invention, when dry etching is performed using a plasma-generated etching gas while a thin film (12) and a PR mask (11) are formed on a lower film (13) as shown in FIG. 2, as shown in FIG. 3, the PR mask (11) may be pushed inward and etched, thereby exposing the upper surface of the thin film (12). Therefore, it is necessary to maintain the continuity and angle between the PR mask (110) and the thin film (12) as shown in FIG. 4 through appropriate control via a control unit.

[0102] That is, the above control unit can control the source power and bias power so that the shape after etching of the thin film (12) and the PR mask (11) is covered through the PR mask (11) up to the upper edge of the thin film (12), and the edges of the PR mask (11) and the thin film (12) are continuously connected without step difference while maintaining a preset angle.

[0103] To this end, the control unit can control the source power to be smaller than the bias power, for example, the ratio of source power to bias power can be controlled to a range of 1:5 or more and 1:2 or less, more preferably 1:2 or less.

[0104] That is, the above control unit can enable dry etching of the copper (Cu) thin film by controlling the bias power to be greater than the source power so that sufficient energy and acceleration of the etching gas for the copper (Cu) thin film (12) are induced.

[0105] In addition, the above control unit has a problem in that when the source power and the bias power are the same or the source power is large, dry etching of the thin film (12) containing copper (Cu) does not occur sufficiently, and etching of the PR mask (11) occurs actively, so the side of the PR mask (11) is etched and the thin film (12) is exposed as shown in FIG. 3.

[0106] That is, as the bias power is relatively lowered, the acceleration of particles decreases, causing active etching on the side of the PR mask (11), resulting in the side of the PR mask (11) being etched and the thin film (12) being exposed. Therefore, by maintaining the bias power higher than the source power, the acceleration of particles is increased and etching in the vertical direction is induced, thereby enabling etching of the PR mask (11) and the thin film (12) containing Cu.

[0107] In particular, the above control unit controls the ratio of source power to bias power to be 0.2 or higher and 0.5 or lower, thereby controlling the bias power to be relatively more than twice as large as the source power, so that dry etching up to the thin film (12) containing Cu is performed smoothly, while also appropriately controlling the etching on the side of the PR mask (11) to prevent inward displacement and maintain a continuous line with the edge of the thin film (12).

[0108] Thus, the control unit controls the ratio of source power to bias power to be 0.2 or higher and 0.5 or lower, thereby preventing the formation of a step difference between the edge of the PR mask (11) and the edge of the thin film (12) due to vertical etching as shown in FIG. 4, enhancing continuity, and maintaining the angle between the lower film (13) and the control unit at a preset angle.

[0109] Meanwhile, the control unit can maintain a bias power of 1 kW or more to induce acceleration of the etching gas so that sufficient etching occurs on the thin film (12) containing Cu and the PR mask (11), and can control the bias power in a range of 60 kW or less so that power greater than the source power is applied.

[0110] In particular, the control unit can control the bias power in a range of 18 kW or more and 23 kW or less, more preferably, depending on conditions such as the size, pressure, temperature, and type of etching gas of the process chamber (100).

[0111] Meanwhile, when the bias power is less than 18kW, the etch rate is lowered, so the bias power can be controlled to 18kW or more to enable sufficient dry etching of the thin film (12) containing copper (Cu), and in particular, the source power must be maintained above a certain level to form a stable plasma, so the bias power can be controlled to 18kW or more to have a value greater than twice the source power.

[0112] In addition, the control unit may apply a bias power of 23kW or less to prevent etching of the lower film (13) due to overetching and to maintain an appropriate etching level for the copper (Cu) thin film (12).

[0113] In addition, the control unit can control the source power to a range of 2 kW or more and 40 kW or less to form a stable plasma within the processing space.

[0114] In particular, the above control unit can control the source power to be 6kW or more and 9kW or less, and the source power can be maintained at 6kW or more to form a stable plasma for the etching gas, and can be controlled at 9kW or less so that a ratio of 1:2 or less with the bias power is satisfied.

[0115] Meanwhile, as shown in FIG. 5a, as the ratio of source power to bias power decreases from 3 to 1 / 3, the Cu etching rate generally increases, and it can be confirmed that conditions are formed in which sufficient etching of the thin film (12) containing copper (Cu) can occur.

[0116] In particular, as shown in FIG. 5a, a significant etching rate for copper (Cu) is formed when the bias power has a value greater than the source power, so the bias power can be formed to be greater than the source power.

[0117] Meanwhile, in this case, although the peak of the etching rate for copper (Cu) is formed at a value where the ratio of source power to bias power exceeds 1:2, in this case, the bias power is relatively low compared to the case where the ratio of source power to bias power is 1:2 or less, so the etching in the horizontal direction is relatively strengthened, and accordingly, the upper surface of the thin film (12) may be exposed due to excessive etching on the side of the PR mask (11).

[0118] Therefore, by controlling the ratio of source power to bias power to 1:2 or less, the coverage of the PR mask (11) over the thin film (12) can be maintained and the formation of a step difference between the PR mask (11) and the thin film (12) at the edge can be prevented.

[0119] In addition, as shown in FIG. 5b, the etching rate of the copper (Cu) thin film increases at 50 mTorr or less, so the pressure of the processing space (S) can be controlled to 50 mTorr or less through the pressure control unit described above.

[0120] Meanwhile, the temperature of the processing space (S) is maintained at 20°C or higher and 120°C or lower, and at this time, the temperature of the electrostatic chuck that controls the temperature atmosphere of the processing space (S) as a bias power supply unit (300) is maintained at -30°C or higher and 20°C or lower, so that even at a relatively low temperature, the bias power relative to the source power through the aforementioned control unit can be appropriately controlled to enable etching of copper (Cu).

[0121] A substrate processing method according to the present invention will be described in detail below with reference to the attached drawings.

[0122] A substrate processing method according to the present invention comprises, as illustrated in FIG. 5, a substrate placement step (S100) of placing the substrate (10) in a process chamber (100); and an etching step (S200) of etching a thin film (12) containing copper (Cu) provided on the substrate (10) and a PR mask (11) provided on the thin film (12) through an etching gas plasma.

[0123] In addition, the substrate processing method according to the present invention may include a conductive layer forming step (S300) for forming the thin film (12) containing copper (Cu) before or after the substrate placement step (S100), and a mask forming step (S400) for forming the PR mask (11) on the thin film (12) after the conductive layer forming step (S300).

[0124] In addition, the substrate processing method according to the present invention may further include a mask removal step (S500) for removing the PR mask (11) after the etching step (S200).

[0125] The above substrate placement step (S100) may be a step of placing a substrate (10) within a process chamber (100).

[0126] At this time, the substrate (10) can be brought in through the gate (102) and supported by being placed on the bias power supply (300).

[0127] Meanwhile, the substrate (10) delivered through the above substrate placement step (S100) is a substrate (10) in which a thin film (12) containing copper (Cu) and a PR mask (11) are formed, and the thin film (12) containing copper (Cu) and the PR mask (11) are formed externally and can be introduced and placed for the etching step (S200).

[0128] In addition, as another example, the substrate placement step (S100) may be a step in which a simple substrate (10) is introduced in which a lower film (13) is formed or a thin film is not formed, as the conductive layer formation step (S300) and the mask formation step (S400) are performed in the same process chamber (100) as the etching step (S200).

[0129] The above etching step (S200) may be a step of etching a thin film (12) containing copper (Cu) provided on a substrate (10) and a PR mask (11) provided on the thin film (12) through an etching gas plasma.

[0130] At this time, in the etching step (S200), the source power applied to induce an appropriate shape for the thin film (12) containing copper (Cu) and the PR mask (11) as described above can be maintained at a smaller value than the bias power.

[0131] More specifically, the etching step (S200) can maintain the ratio of source power to bias power at 1:2 or less.

[0132] In addition, in this case, the etching step (S200) can be controlled by applying a bias power of 18kW or more and 23kW or less, and the source power can be applied of 6kW or more and 9kW or less to prevent excessive etching of the side of the PR mask (11) while enabling stable plasma formation for the etching gas.

[0133] Thus, the etching step (S200) can form a plasma by supplying an etching gas while controlled to an appropriate power level, thereby performing plasma dry etching on the thin film (12).

[0134] The above conductive layer formation step (S300) is a step of forming a thin film (12) containing copper (Cu) before or after the substrate placement step (S100), and by forming a conductive layer as a thin film (12) containing copper (Cu), patterning and wiring formation can be made possible through the etching step (S200) performed later.

[0135] At this time, the conductive layer formation step (S300) can be performed in the same process chamber (100) as the etching step (S200) as described above, and accordingly, it can be performed after the substrate placement step (S100), or as another example, it can be performed before the substrate placement step (S100).

[0136] The above mask formation step (S400) is a step of forming a PR mask (11) on a thin film (12) after the conductive layer formation step (S300), and various configurations are possible.

[0137] For example, the mask formation step (S400) is a step of forming a PR mask (11) on a thin film (12), and can enable patterning through an etching step (S200) on a copper (Cu) thin film (12) formed through a conductive layer formation step (S300).

[0138] At this time, the mask formation step (S400) may be performed between the conductive layer formation step (S300) and the etching step (S200), and may be performed within the same process chamber (100) as the etching step (S200), or may be performed outside in a separate system or chamber.

[0139] The above mask removal step (S500) can be performed as a step of removing the PR mask (11) after the etching step (S200).

[0140]

[0141] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention.

Claims

1. A substrate processing apparatus for etching a substrate (10) comprising a thin film (12) containing copper (Cu) and a PR mask (11) provided on the thin film (12), A process chamber (100) forming a sealed processing space (S); A source power supply unit (200) to which source power is applied to generate plasma of etching gas in the above processing space (S); A bias power supply unit (300) that supports the substrate (10) in the processing space (S) and to which bias power is applied; It includes a control unit that controls the source power and the bias power to control the etching of the thin film (12) and the PR mask (11), The above control unit is, A substrate processing apparatus characterized by controlling the source power to be smaller than the bias power.

2. In Claim 1, The above control unit is, A substrate processing apparatus characterized by controlling the ratio of the source power to the bias power to be 1:2 or less.

3. In Claim 1, The above etching gas is, A substrate processing device characterized by being an inert gas.

4. In Claim 1, The above etching gas is, A substrate processing apparatus characterized by including at least one of Ar, He, Kr, N2 and Xe.

5. In Claim 1, The above PR mask (11) is, A substrate processing device characterized by including a polymer compound.

6. In Claim 1, A substrate processing device characterized by additionally including a pressure control unit that controls the pressure of the processing space (S) to 50 mTorr or less.

7. In Claim 1, The above control unit is, A substrate processing device characterized by controlling the above bias power to be 1kW or more and 40kW or less.

8. In Claim 1, The above control unit is, A substrate processing device characterized by controlling the above bias power to 18kW or more and 23kW or less.

9. In Claim 1, The above control unit is, A substrate processing device characterized by controlling the above source power to 6kW or more and 9kW or less.

10. In Claim 1, The above control unit is, A substrate processing device characterized by controlling the above source power to 2kW or more and 60kW or less.

11. In Claim 1, A substrate processing apparatus characterized by the temperature of the processing space (S) being maintained at 20℃ or higher and 120℃ or lower.

12. In Claim 1, The above process chamber (100) is, It includes a chamber body (110) having an opening (101) formed on the upper side, and a window assembly (120) installed on the chamber body (110) to cover the opening (101). The above source power supply unit (200) is, A substrate processing device characterized by including at least one antenna part (210) installed on the upper side of the window assembly (120) to form an induced electric field in the processing space (S).

13. In Claim 1, The above source power supply unit (200) is, A substrate processing apparatus characterized by including a CCP electrode to which an RF power source or a DC power source is applied as the above source power.

14. A substrate processing method for etching a substrate (10) through an etching gas plasma according to source power and bias power, A substrate placement step (S100) for placing the substrate (10) within a process chamber (100); The method includes an etching step (S200) of etching a thin film (12) containing copper (Cu) provided on the substrate (10) and a PR mask (11) provided on the thin film (12) through an etching gas plasma. The above etching step (S200) is, A substrate processing method characterized by the applied source power being maintained at a lower value than the bias power.

15. In Claim 14, A substrate processing method characterized by including a conductive layer forming step (S300) for forming the thin film (12) containing copper (Cu) before or after the substrate placement step (S100).

16. In Claim 15, A substrate processing method characterized by including a mask forming step (S400) for forming the PR mask (11) on the thin film (12) after the conductive layer forming step (S300).

17. In Claim 16, A substrate processing method characterized by additionally including a mask removal step (S500) for removing the PR mask (11) after the etching step (S200).

18. In Claim 14, The above etching step (S200) is, A substrate processing method characterized by maintaining the ratio of the source power to the bias power at 1:2 or less.

19. In Claim 14, The above etching gas is, A substrate treatment method characterized by including at least one of Ar, He, Kr, N2 and Xe.

20. In Claim 14, The above PR mask (11) is, A substrate treatment method characterized by including a polymer compound.

21. In Claim 14, The above etching step (S200) is, A substrate processing method characterized by applying the above-mentioned bias power of 1kW or more and 40kW or less.

22. In Claim 14, The above etching step (S200) is, A substrate processing method characterized by applying the above source power at a level of 2kW or more and 60kW or less.

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