Substrate treatment apparatus and substrate treatment method

Abstract

According to one embodiment of the present invention, a method for forming a metal-containing thin film on a substrate comprises the steps of: preparing a substrate in a deposition chamber; depositing a metal atomic layer on the substrate by supplying, to the substrate, a carrier gas including sputtered metal atoms formed from a sputtering target located in a sputtering chamber separate from the deposition chamber; and chemically reacting the metal atomic layer with a reaction gas to form a metal-containing thin film containing the metal atoms.

Description

Substrate processing device and substrate processing method

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a chemical vapor deposition apparatus using a sputtered metal atomic layer.

[0002] Typically, a sputtering device or a Metal Organic Chemical Vapor Deposition (MOCVD) device is used to deposit metal on a substrate. In a sputtering device, DC power, DC pulsed power, or RF power is applied to a metal sputtering target to sputter metal atoms from the target using an inert gas plasma such as argon, and then the sputtered metal atoms are deposited on the substrate.

[0003] The MOCVD device introduces a carrier gas into a bubbler that vaporizes solid or liquid metal-organic compounds, transfers the metal-organic compounds onto a substrate via the carrier gas, and the heated substrate decomposes the metal-organic compounds to deposit metal onto the substrate.

[0004] Chemical vapor deposition forms a thin film through a chemical reaction in which gases injected into a reactor react on a heated substrate. Plasma can be used to reduce the temperature of the substrate.

[0005] Meanwhile, transition metal dichalcogenides (TMDs) are two-dimensional compounds formed by the combination of transition metals and chalcogen elements, and are utilized as semiconductor materials. They are composed of transition metal elements such as tungsten (W) or molybdenum (Mo) and chalcogen elements such as sulfur (S).

[0006] In the development of 2D TMD semiconductor technology, technology capable of uniformly manufacturing ultra-thin films at the atomic layer level with excellent quality is required. To manufacture TMDs such as MoS2 as thin films, Mo material and sulfur (S) material are required.

[0007] One technical problem to be solved by the present invention is to provide metal atoms to a substrate by sputtering and to convert a metal atomic layer formed on the substrate into a metal-containing thin film using a reaction gas and plasma. This process is performed in a manner similar to atomic layer deposition, and can provide a 2D TMD thin film with high crystallinity.

[0008] One technical problem to be solved by the present invention is to provide metal atoms to a substrate by sputtering and chalcogen atoms by sputtering to provide a 2D TMD thin film with high crystallinity on a substrate.

[0009] One technical problem to be solved by the present invention is to provide a high-quality 2D TMD thin film by connecting a sputtering chamber that provides metal atoms by sputtering in series with a deposition chamber, so that the deposition chamber sequentially receives sputtered metal atoms and a separate reaction gas.

[0010] One technical problem to be solved by the present invention is to provide a high-quality 2D TMD thin film by arranging a sputtering module that provides metal atoms by sputtering and a plasma module that decomposes a reaction gas in parallel, and by sequentially providing corresponding processes to a substrate by rotation of the sputtering module and the plasma module.

[0011] The technical problem to be solved by the present invention is to provide space-division sputtering deposition.

[0012] The technical problem to be solved by the present invention is to provide time-space divided sputtering deposition.

[0013] A method for forming a metal-containing thin film according to one embodiment of the present invention forms a metal-containing thin film on a substrate. The method for forming the metal-containing thin film comprises: a step of preparing a substrate in a deposition chamber; a step of adsorbing sputtering metal atoms formed from a sputtering target located in a sputtering chamber onto the substrate; and a step of forming a metal-containing thin film by spraying a reaction gas into the deposition chamber.

[0014] In one embodiment of the present invention, the step of forming a metal-containing thin film by spraying a reaction gas into the deposition chamber may include the step of forming a plasma to form the metal-containing thin film.

[0015] In one embodiment of the present invention, the sputtering metal atom is one of Mo and W, the metal-containing thin film is at least one of MoS2, MoSe2, MoTe2, WS2, WSe2, and MoN, and the reaction gas may be at least one of H2S, H2Se, H2Te, and N2.

[0016] In one embodiment of the present invention, the step of adsorbing sputtering metal atoms formed from a sputtering target located in a sputtering chamber onto the substrate may be such that the sputtering metal atoms are formed from the sputtering target located in a sputtering chamber separated from the deposition chamber. The sputtering metal atoms may be supplied to the substrate together with a carrier gas injected into the sputtering chamber.

[0017] In one embodiment of the present invention, the sputtering metal atoms can be supplied to the substrate by passing through a gas injection unit having a plurality of injection holes formed together with the carrier gas injected into the sputtering chamber.

[0018] A substrate processing apparatus according to one embodiment of the present invention comprises: a deposition chamber including a first region and a second region; a first gas injection unit for injecting sputtering metal atoms into the first region; a second gas injection unit for injecting a reaction gas into the second region; a first separation gas injection unit for injecting a purge gas to separate the space between the first region and the second region; and a sputtering chamber connected to the first gas injection unit and forming the sputtering metal atoms and providing them to the first gas injection unit.

[0019] In one embodiment of the present invention, the sputtering chamber providing the sputtering metal atoms to the first region may operate the power in a continuous mode or in a pulse mode, or may mix the order of operation in a continuous mode and a pulse mode.

[0020] In one embodiment of the present invention, the sputtering metal atoms may be supplied to the substrate of the deposition chamber by passing through the first gas injection unit having a plurality of injection holes formed together with the carrier gas injected into the sputtering chamber.

[0021] In one embodiment of the present invention, the first gas injection unit may sequentially inject a first purge gas into the first region of the deposition chamber after injecting the sputtering metal atoms into the first region. The second gas injection unit may sequentially inject a second purge gas into the second region of the deposition chamber after injecting the reaction gas into the second region.

[0022] In one embodiment of the present invention, when the susceptor supporting the substrates is in a stationary state, the first gas injection unit, the second gas injection unit, and the separation gas injection unit may operate. After the susceptor rotates 180 degrees, the first gas injection unit, the second gas injection unit, and the separation gas injection unit may operate when the susceptor is in a stationary state.

[0023] A method for forming a metal-containing thin film according to one embodiment of the present invention comprises a sputtering chamber and a deposition chamber including a first region and a second region, and forms a metal-containing thin film on one or more substrates on a susceptor in the deposition chamber. The method for forming the metal-containing thin film comprises: a step of sputtering metal atoms onto one or more substrates in the first region; a step of moving one or more substrates in the first region to the second region by rotating the susceptor; and a step of spraying a reaction gas onto one or more substrates in the second region.

[0024] In one embodiment of the present invention, the step of spraying sputtering metal atoms onto one or more substrates of the first region may involve spraying the sputtering metal atoms while the susceptor is stationary. The step of spraying a reaction gas onto one or more substrates of the second region may involve spraying the reaction gas while the susceptor is stationary.

[0025] In one embodiment of the present invention, the step of injecting a purge gas to separate the space of the first region and the second region may be further included.

[0026] In one embodiment of the present invention, between the step of spraying sputtering metal atoms onto one or more substrates of the first region and the step of moving one or more substrates of the first region to the second region by rotating a susceptor, the method may further include the step of spraying purge gas onto one or more substrates of the first region.

[0027] In one embodiment of the present invention, after the step of spraying a reaction gas onto one or more substrates of the second region, the step of spraying a purge gas onto one or more substrates of the second region may be further included.

[0028] A substrate processing apparatus according to one embodiment of the present invention comprises: a deposition chamber comprising spatially separated first region, second region, third region, and fourth region; a first gas injection unit for injecting sputtering metal atoms into one or two regions among the first region and the third region; a second gas injection unit for injecting a reaction gas into one or two regions among the second region and the fourth region; and a sputtering chamber connected to the first gas injection unit and forming sputtering metal atoms and providing them to the first gas injection unit.

[0029] In one embodiment of the present invention, a susceptor disposed in the lower part of the deposition chamber and supporting a substrate may be further included. The susceptor may rotate at a constant speed.

[0030] In one embodiment of the present invention, a first separation gas injection unit for injecting purge gas to separate the space between the first region and the second region, between the second region and the third region, between the third region and the fourth region, and between the fourth region and the first region may be further included.

[0031] In one embodiment of the present invention, the second gas injection unit can form a plasma with the reaction gas to activate it and react with the metal atoms adsorbed on the substrate to form a metal atom-containing thin film.

[0032] In one embodiment of the present invention, the sputtering chamber may operate the power in a continuous mode or the voltage in a pulse mode, or may mix the order of operation in a continuous mode or the power in a pulse mode.

[0033] A method for forming a metal-containing thin film according to an embodiment of the present invention comprises a sputtering chamber and a deposition chamber comprising a spatially separated first region, a second region, a third region, and a fourth region, wherein a metal-containing thin film is formed on one or more substrates on a susceptor in the deposition chamber. The method for forming the metal-containing thin film may include the steps of: spraying sputtering metal atoms onto one or more substrates in the first region; spraying a reaction gas onto one or more substrates in the second region; spraying sputtering metal atoms onto one or more substrates in the third region; and spraying a reaction gas onto one or more substrates in the fourth region. One or more substrates on the susceptor may sequentially rotate the first region, the second region, the third region, and the fourth region.

[0034] In one embodiment of the present invention, a susceptor disposed in the lower part of the deposition chamber and supporting a substrate is further included, and the susceptor can rotate at a constant speed.

[0035] In one embodiment of the present invention, the step of spraying a reaction gas onto one or more substrates of the second region may form a plasma with the reaction gas to activate it and react with the metal atoms adsorbed on the substrate to form a metal atom-containing thin film. The step of spraying a reaction gas onto one or more substrates of the fourth region may form a plasma with the reaction gas to activate it and react with the metal atoms adsorbed on the substrate to form a metal atom-containing thin film.

[0036] In one embodiment of the present invention, the method may further include the step of injecting a purge gas to separate the space between the first region and the second region, between the second region and the third region, between the third region and the fourth region, and between the fourth region and the first region.

[0037] In one embodiment of the present invention, the sputtering chamber may operate the power in a continuous mode or the voltage in a pulse mode, or may mix the order of operation in a continuous mode or the power in a pulse mode.

[0038] One technical problem to be solved by the present invention is to provide metal atoms to a substrate by sputtering and to convert a metal atomic layer formed on the substrate into a metal-containing thin film using a reaction gas and plasma. This process is performed in a manner similar to atomic layer deposition, and can provide a 2D TMD thin film with high crystallinity.

[0039] One technical problem to be solved by the present invention is to provide metal atoms to a substrate by sputtering and chalcogen atoms by sputtering to provide a 2D TMD thin film with high crystallinity on a substrate.

[0040] One technical problem to be solved by the present invention is to provide a high-quality 2D TMD thin film by connecting a sputtering chamber that provides metal atoms by sputtering in series with a deposition chamber, so that the deposition chamber sequentially receives sputtered metal atoms and a separate reaction gas.

[0041] One technical problem to be solved by the present invention is to provide a high-quality 2D TMD thin film by arranging a sputtering module that provides metal atoms by sputtering and a plasma module that decomposes a reaction gas in parallel, and by sequentially providing corresponding processes to a substrate by rotation of the sputtering module and the plasma module.

[0042] The technical problem to be solved by the present invention is to provide space-division sputtering deposition with high productivity.

[0043] The technical problem to be solved by the present invention is to provide time-space divided sputtering deposition with high productivity.

[0044] FIG. 1 is a conceptual diagram illustrating a substrate processing apparatus according to one embodiment of the present invention.

[0045] Figure 2 is a timing diagram illustrating a method for forming a metal-containing thin film using the substrate processing apparatus of Figure 1.

[0046] FIG. 3 shows a metal atom, a reaction gas, and a metal-containing thin film material according to one embodiment of the present invention.

[0047] FIG. 4 is a conceptual diagram showing a gas injection unit according to one embodiment of the present invention.

[0048] FIG. 5 is a conceptual diagram illustrating a sputtering chamber according to another embodiment of the present invention.

[0049] FIG. 6 is a conceptual diagram illustrating a substrate processing apparatus according to one embodiment of the present invention.

[0050] Figure 7 is a timing diagram showing the operation of the substrate processing device of Figure 6.

[0051] Figures 8a and 8b are plan views showing a substrate processing apparatus.

[0052] Figures 9a and 9b are cross-sections cut along the line AA' of Figure 8a.

[0053] Figure 10 is a timing diagram showing the operation of the substrate processing device of Figure 8a.

[0054] FIG. 11a is an exploded perspective view showing a substrate processing apparatus equipped with a sputtering chamber according to one embodiment of the present invention.

[0055] FIG. 11b is a plan view of the deposition chamber of the substrate processing apparatus of FIG. 11a.

[0056] FIG. 11c is a conceptual diagram showing the operation of the stuffing chamber of the substrate processing device of FIG. 11a.

[0057] FIG. 11d is a conceptual diagram showing the operation of the reaction gas of the substrate processing apparatus of FIG. 11a.

[0058] FIG. 11e is a timing diagram showing the sputtering gas injection module, air curtain module, reaction gas injection module, and substrate rotation of the substrate processing device of FIG. 11a over time.

[0059] FIG. 11f is a timing diagram showing the process over time as viewed by a rotating substrate mounted on a rotating susceptor in the substrate processing device of FIG. 11a.

[0060] FIG. 11g is a timing diagram showing the process over time as viewed by a rotating substrate mounted on a rotating susceptor in the substrate processing device of FIG. 11a.

[0061] FIG. 12a is an exploded perspective view showing a substrate processing apparatus according to another embodiment of the present invention.

[0062] FIG. 12b is a plan view showing the substrate processing apparatus of FIG. 12a.

[0063] FIG. 12c is a conceptual diagram showing the substrate processing apparatus of FIG. 12a.

[0064] FIG. 12d is a timing diagram showing the operation of the substrate processing device of FIG. 12a.

[0065] According to the present invention, the metal-containing thin film may be a transition metal dichalcogenide (TMD) such as MoS2, MoSe2, MoTe2, WS2, or WSe2. Alternatively, the metal-containing thin film may be a metal nitride film or a metal oxide film such as MoN. The Mo material is obtained by sputtering, and sulfur (S) can be obtained by decomposing a gas such as H2S by plasma. Se (Cerium) can be obtained by decomposing H2Se gas by plasma. Te can be obtained by decomposing H2Te gas by plasma.

[0066] According to a modified embodiment of the present invention, Mo material or W material is obtained by sputtering, and sulfur (S), Se (Cerium), and Te (Tellurium) can be obtained by sputtering.

[0067] According to the present invention, a metal-containing thin film can be deposited by transferring metal atoms sputtered from a sputter target in a sputtering chamber to a substrate placed in a deposition chamber using a carrier gas to form a metal atomic layer. Meanwhile, a reactive gas such as H2S can be decomposed by plasma, and active species can chemically react with the metal atomic layer to form a metal-containing thin film on the substrate. The formation of a metal atomic layer by transferring sputtered metal atoms using such a carrier gas and the reaction between the active species and the metal atomic layer by plasma using the reactive gas in the deposition chamber proceed alternately, thereby allowing a metal compound with high crystallinity to be deposited.

[0068] According to the present invention, this can be performed by a process similar to atomic layer deposition. Accordingly, a metal compound with high crystallinity can be deposited.

[0069] According to the present invention, the material finally deposited may be MoS2, MoSe2, MoTe2, WS2, WSe2, or MoN.

[0070] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete and to ensure that the spirit of the present invention is sufficiently conveyed to those skilled in the art. In the drawings, components are exaggerated for clarity. Throughout the specification, parts indicated by the same reference numeral represent the same components.

[0071] FIG. 1 is a conceptual diagram illustrating a substrate processing apparatus according to one embodiment of the present invention.

[0072] Figure 2 is a timing diagram illustrating a method for forming a metal-containing thin film using the substrate processing apparatus of Figure 1.

[0073] Referring to FIGS. 1 and 2, a method for forming a metal-containing thin film according to one embodiment of the present invention forms a metal-containing thin film on a substrate. The method for forming the metal-containing thin film comprises the steps of: preparing a substrate (122) in a deposition chamber (110); adsorbing sputtering metal atoms formed from a sputtering target (164) located in a sputtering chamber (160) onto the substrate (122); and spraying a reaction gas into the deposition chamber (110) to form the metal-containing thin film.

[0074] The step of forming a metal-containing thin film by spraying a reaction gas into the deposition chamber may include the step of forming a plasma to form the metal-containing thin film. The sputtering metal atom is one of Mo and W, the metal-containing thin film is at least one of MoS2, MoSe2, MoTe2, WS2, WSe2, and MoN, and the reaction gas may be at least one of H2S, H2Se, H2Te, and N2.

[0075] The step of adsorbing sputtering metal atoms formed from a sputtering target (164) located in a sputtering chamber (160) onto the substrate (122) is such that the sputtering metal atoms are formed from the sputtering target located in a sputtering chamber separated from the deposition chamber. The sputtering metal atoms can be supplied to the substrate (122) together with a carrier gas injected into the sputtering chamber (160). The sputtering metal atoms can be supplied to the substrate (122) by passing through a gas injection unit (130) having a plurality of injection holes formed therein, together with the carrier gas injected into the sputtering chamber.

[0076] A substrate processing apparatus (100) according to one embodiment of the present invention comprises: a sputtering chamber (160) that forms a plasma with a carrier gas and sputters a metal sputtering target (164) to form metal atoms sputtered from the metal sputtering target; and a deposition chamber (110) connected to the sputtering chamber (160).

[0077] The deposition chamber (110) comprises: a deposition chamber body (111); a susceptor (120) supporting a substrate (122); and a gas injection unit (130) disposed within the deposition chamber body (111) and injecting gas onto the substrate (122). The gas injection unit (130) receives a carrier gas containing the sputtered metal atoms and injects it onto the substrate.

[0078] The sputtering chamber (160) may include: a sputtering chamber body (162) providing a sealed space; a metal sputtering target (164) disposed within the sputtering chamber body (162); a target support member (165) supporting the metal target (164); a power supply member (168a) supplying power to the metal sputtering target (164); and a carrier gas supply member (166) supplying the carrier gas to the sputtering chamber body (162).

[0079] The sputtering chamber body (162) may be cylindrical in shape, and the sputtering chamber heating unit (163) may be disposed in the sputtering chamber body (162) to heat the sputtering chamber body (162). Accordingly, sputtered metal atoms may be prevented from being deposited on the inner wall of the sputtering chamber body (162).

[0080] The metal target may be a molybdenum (Mo) target or a tungsten (W) target. The metal sputtering target (164) may be in the shape of a plate. The metal sputtering target (164) may be sputtered by DC sputtering, RF sputtering, or magnetron sputtering. An inert gas such as argon may be used as the gas for sputtering. The carrier gas may contain sputtered metal atoms and an inert gas, flow into the deposition chamber, and then be sprayed onto the substrate to form a metal primary layer.

[0081] The carrier gas can be supplied to the sputtering chamber body (162) through the carrier gas supply unit (166). The carrier gas can be used to form a plasma and to transfer sputtered metal atoms to a substrate.

[0082] The target support (165) can be used to mount the metal target (164). The target support (165) may include a grounded area to confine the plasma to a specific area.

[0083] In the case of RF sputtering, the metal sputtering target may be subjected to a high voltage by an RF sinusoidal wave. The RF power supply may further include a blocking capacitor for DC biasing the metal sputtering target. The RF power supply may apply power to the metal sputtering target through an impedance matching network (168b) for stable power delivery to the load.

[0084] A valve (150) may be positioned on a path that delivers a carrier gas containing metal atoms of the sputtering chamber (160) to a gas injection unit (130) of the deposition chamber. The valve (150) may have an open state and a closed state by a control unit and deliver the carrier gas to the gas injection unit (130) of the deposition chamber (110) during a predetermined time interval. The valve (150) may be opened only while the sputtering process is in progress in the sputtering chamber.

[0085] The reaction gas can be injected onto the substrate through the flow path (152) and the gas injection section (130). The reaction gas varies depending on the material to be deposited and may be H2S, H2Se, H2Te, or N2.

[0086] The purge gas can be injected onto the substrate (122) through the Euro (153) and the gas injection unit (130). The purge gas may be an inert gas or nitrogen gas. The purge gas can be injected onto the substrate to stabilize the surface condition of the substrate (122).

[0087] The deposition chamber (110) may be a cylindrical chamber made of metal. The deposition chamber (110) may be heated by a heating unit (112). For example, the heating unit (112) may heat at least one of the side, top surface, and bottom surface of the deposition chamber body (111). Accordingly, the excessive deposition of metal atoms contained in the carrier gas on the inner wall of the deposition chamber can be suppressed.

[0088] The exhaust unit (114) can exhaust the deposition chamber (110). The exhaust unit (114) may include a turbomolecular pump (TMP). The exhaust unit (114) can maintain the pressure of the deposition chamber at a pressure of 1 Torr or less. Preferably, the exhaust unit (114) can maintain the pressure at 0.1 Torr or less during the process.

[0089] The susceptor (120) may be positioned in the lower part of the deposition chamber. The susceptor (120) may include a heater for controlling the deposition temperature and an electrostatic chuck for adsorbing a substrate.

[0090] The gas injection unit (130) may be positioned on the inner upper side of the deposition chamber body (111) so as to face the substrate (122). The gas injection unit (130) may be heated by a separate heater. The gas injection unit (130) may include an electrode (136) to which an RF power source (140a) is connected. The electrode (136) may form plasma at the bottom of the gas injection unit (130). The gas injection unit (130) may provide a buffer space (132) by a baffle (134) having a plurality of through holes (134a) spaced apart from the top plate (131). An electrode (136) electrically insulated from the baffle may be positioned at the bottom of the baffle (134). A plurality of through holes (136a) may be formed in the electrode (136). The baffle (134) and the top plate (131) may be grounded with a conductor. The baffle (134) and the electrode (136) may be separated by a ring-shaped insulating spacer (139). The electrode (136) may be connected to an RF power source to form plasma in the space between the baffle (134) and the electrode (136). The plasma may diffuse to the lower part of the electrode (136) through the through holes of the electrode (136). The buffer space (132) may be connected to the valve (150) by a flow path.

[0091] According to a modified embodiment of the present invention, the gas injection unit may include a first path for injecting the carrier gas and a second path for injecting the reaction gas.

[0092] A method for forming a metal-containing thin film on a substrate according to one embodiment of the present invention comprises: a step (S102) of preparing a substrate (122) in a deposition chamber (110); a step (S110) of depositing a metal atomic layer on the substrate by supplying a carrier gas containing sputtered metal atoms formed from a metal sputtering target (164) located in a sputtering chamber (160) separated from the deposition chamber (110) to the substrate; and a step (S120) of reacting the metal atomic layer with a reaction gas to form a metal-containing thin film containing the metal atoms.

[0093] Preparing a substrate (122) in a deposition chamber (110) (S102) involves a robot arm with the substrate mounted thereon entering the deposition chamber and mounting the substrate using the lift pin of a susceptor.

[0094] The step (S110) of depositing a metal atomic layer on a substrate by supplying a carrier gas containing sputtered metal atoms formed from a sputtering target located in a sputtering chamber separated from the deposition chamber to the substrate may include supplying the carrier gas containing sputtered metal atoms to the substrate (122) by passing it through a gas injection unit (130) having a plurality of injection holes.

[0095] The step (S120) of forming a metal-containing thin film containing metal atoms by chemically reacting the metal atomic layer with a reaction gas may include the step of forming a plasma using the reaction gas. The plasma is formed by RF power applied to the electrode (136), the reaction gas is decomposed and activated in the plasma, and the reaction gas may combine with the metal atomic layer to form a metal-containing thin film. The metal-containing thin film may be a two-dimensional transition metal dichalcogenide (TMD) thin film.

[0096] The step (S110) of depositing a metal atomic layer on a substrate by supplying a carrier gas containing sputtered metal atoms formed from a sputtering target located in a sputtering chamber separated from the deposition chamber to the substrate can be performed by supplying the carrier gas containing sputtered metal atoms to the substrate with the valve (150) disposed between the deposition chamber and the sputtering chamber in an open state, thereby depositing a metal atomic layer on the substrate.

[0097] The step (S120) of forming a metal-containing thin film containing metal atoms by chemically reacting the metal atomic layer with a reaction gas can be performed by supplying the reaction gas to the substrate while the valve (150) disposed between the deposition chamber and the sputtering chamber is closed.

[0098] The step of depositing the metal atomic layer (S110) and the step of forming a metal-containing thin film containing the metal atoms (S120) can be repeated alternately. Accordingly, a two-dimensional transition metal dichalcogenide (TMD) thin film with a structure can be formed in multiple layers.

[0099] The metal atoms may be Mo or W. The metal-containing thin film may be MoS2, MoSe2, MoTe2, WS2, WSe2, or MoN. The reaction gas may be H2S, H2Se, H2Te, or N2.

[0100] A method for forming a metal-containing thin film according to one embodiment of the present invention comprises: a) forming a first plasma with a carrier gas in a sputtering chamber and sputtering a metal sputtering target, and then using the carrier gas to flow metal atoms sputtered from the metal sputtering target into a deposition chamber separated from the sputtering chamber to form a metal atomic layer on a substrate (S110); and b) forming a metal-containing thin film containing the metal atoms using a reaction gas in the metal atomic layer (S120). Steps a) and b) are repeated.

[0101] The step of forming a metal atomic layer on the substrate (S110) may further include the step of supplying a first purge gas to the substrate or exhausting the deposition chamber (S112). The first purge gas may be nitrogen gas or an inert gas. The first purge gas may stabilize the surface condition of the substrate.

[0102] The step (S120) of forming the metal-containing thin film may further include the step (122) of supplying a second purge gas to the substrate or exhausting the deposition chamber. The second purge gas may be nitrogen gas or an inert gas. The second purge gas may stabilize the surface condition of the substrate.

[0103] The deposition chamber further includes a gas injection unit positioned to face the substrate, wherein the gas injection unit can inject the carrier gas and the reaction gas onto the substrate. The substrate may be a silicon substrate, a glass substrate, a sapphire substrate, a substrate having an oxide film formed thereon, or a substrate having a nitride film formed thereon.

[0104] FIG. 3 shows a metal atom, a reaction gas, and a metal-containing thin film material according to one embodiment of the present invention.

[0105] Referring to FIG. 3, the metal atoms may be Mo or W. The metal-containing thin film may be MoS2, MoSe2, MoTe2, WS2, WSe2, or MoN. The reaction gas may be H2S, H2Se, H2Te, or N2.

[0106] According to a modified embodiment of the present invention, the metal-containing thin film can be formed by sputtering using a first sputtering target (Mo) and a second sputtering target (Se, Te, S), respectively.

[0107] FIG. 4 is a conceptual diagram showing a gas injection unit according to one embodiment of the present invention.

[0108] Referring to FIG. 4, the gas injection unit (230) may include a first path for injecting the carrier gas and a second path for injecting the reaction gas. The first path and the second path may be different.

[0109] The above gas injection unit (230) may include an upper gas injection unit (213, 214) comprising a first gas injection unit (213) for injecting a first gas (carrier gas) and a second gas injection unit (214) for injecting the first gas and a second gas (reaction gas); and an electrode (212) located below the upper injection unit (213, 214) for injecting the first gas and the second gas into the upper part of the susceptor (172) through the gas injection holes (212a).

[0110] The upper gas injection unit (213, 214) is grounded, the electrode (212) is connected to an RF power source, and plasma can be formed in the space (211) between the upper gas injection unit (213, 214) and the electrode (212).

[0111] The gas injection unit (210) comprises an electrode (212) having gas injection holes (212a); and upper gas injection units (213, 214) spaced apart from the electrode (212) and disposed on the electrode (212). The buffer space (211) between the electrode (212) and the upper gas injection units (213, 214) can receive a first gas and a second gas from the upper gas injection units (213, 214) through different nozzles.

[0112] The upper gas injection section (213, 214) comprises: a first gas injection section (213) disposed on the electrode (212); and a second gas injection section (214) spaced apart from the first gas injection section (213) and disposed on the first gas injection section (213). The upper gas injection section (213, 214) and the electrode (212) are made of a conductive material and may be coated with a dielectric material such as alumina or iridium oxide.

[0113] The electrode (212) and the first gas injection unit (213) may be separated by an insulating spacer (215). The first gas injection unit (213) and the second gas injection unit (214) may be separated by an insulating spacer (216).

[0114] The second gas injection unit (214) includes a second gas buffer space (214a) that receives the first gas therein. A plurality of nozzles (13a) connected to the second gas buffer space (214a) can each be connected to a plurality of nozzles (13c) of the first gas injection unit (213). Accordingly, the first gas can be branched into a plurality of paths from the second gas buffer space and injected into the lower surface of the first gas injection unit.

[0115] The first gas buffer space (213a) is the space between the first gas injection unit (213) and the second gas injection unit (214) and receives the second gas. The second gas can be received through the second gas injection unit (214).

[0116] The first gas injection unit (213) may include a first nozzle (13) and a second nozzle (15). The first nozzle (13) may inject a first gas, and the second nozzle (15) may inject a second gas. The first nozzle and the second nozzle may be arranged regularly.

[0117] The first nozzle (13) includes a first portion (13a) connecting the lower surface of the second gas injection unit (214) and the second gas buffer space (214a), a second portion (13c) penetrating the first gas injection unit (213), and a third portion (13b) connecting the first portion (13a) and the second portion (13c). The third portion (13b) may be in the shape of a pipe formed from an insulating member. Accordingly, the first gas injection unit (213) and the second gas injection unit (214) may be electrically insulated.

[0118] The first gas is injected into the buffer space through the first nozzle. The second gas is injected into the buffer space through the second nozzle.

[0119] The second nozzle (15) comprises a preliminary buffer area (15a) disposed in a second gas buffer space, a fourth portion (15b) connecting the preliminary buffer area and the first gas buffer space (213a) and the preliminary buffer area (15a), and a fifth portion (15c) connected to the first gas buffer space (213a) and formed in the first gas injection portion (213).

[0120] FIG. 5 is a conceptual diagram illustrating a sputtering chamber according to another embodiment of the present invention.

[0121] Referring to FIG. 5, a sputtering chamber (360) according to another embodiment of the present invention may include: a sputtering chamber body (162) providing a sealed space; a metal sputtering target (164) disposed within the sputtering chamber body (162); a target support member (165) supporting the metal target (164); a power supply member (168a) supplying power to the metal sputtering target (164); and a carrier gas supply member (166) supplying the carrier gas to the sputtering chamber body (162).

[0122] The sputtering chamber body (162) may be cylindrical in shape, and a sputtering chamber heating unit may be disposed in the sputtering chamber body (162) to heat the sputtering chamber body (162). Accordingly, sputtered metal atoms may be suppressed from being deposited on the inner wall of the sputtering chamber body (162). The metal sputtering target (164) may be cylindrical in shape. The target support (165) may be cylindrical in shape. The metal sputtering target (164) may be disposed inside the target support (165). Metal atoms sputtered from the metal sputtering target (164) may be exposed minimally to the inside of the sputtering chamber to suppress deposition on the side wall.

[0123] FIG. 6 is a conceptual diagram illustrating a substrate processing apparatus according to one embodiment of the present invention.

[0124] Figure 7 is a timing diagram showing the operation of the substrate processing device of Figure 6.

[0125] Referring to FIGS. 6 and 7, a method for forming a metal-containing thin film according to one embodiment of the present invention forms a metal-containing thin film on a substrate. The method for forming the metal-containing thin film comprises the steps of: preparing a substrate (122) in a deposition chamber (110); adsorbing sputtering metal atoms formed from a sputtering target (164) located in a sputtering chamber (160a) onto the substrate (122); and spraying a reaction gas into the deposition chamber (110) to form the metal-containing thin film.

[0126] A substrate processing apparatus (400) according to one embodiment of the present invention comprises: a first sputtering chamber (160a) for forming a plasma with a first carrier gas and sputtering a first metal sputtering target to form a first metal atom sputtered from the first metal sputtering target; a second sputtering chamber (160b) for forming a plasma with a second carrier gas and sputtering a second metal sputtering target to form a second metal atom sputtered from the second metal sputtering target; and a deposition chamber (110) connected to the first sputtering chamber and the second sputtering chamber.

[0127] The deposition chamber (110) comprises: a deposition chamber body (111); a susceptor (120) supporting a substrate (122); and a gas injection unit (130) disposed within the deposition chamber body and injecting gas onto the substrate. The gas injection unit (130) receives a first carrier gas containing the sputtered first metal atoms and a second carrier gas containing the sputtered second metal atoms and injects them onto the substrate.

[0128] The first sputtering chamber (160a) and the second sputtering chamber (160b) may be the same as the sputtering chamber (160) of FIG. 1 or the sputtering chamber (360) of FIG. 5.

[0129] The target mounted in the first sputtering chamber (160a) may be Mo or W, and the target mounted in the second sputtering chamber (160b) may be a solid-state S, Te, or Se block. A carrier gas containing sputtered atoms (Mo, W) from the first sputtering chamber (160a) may be sprayed onto a substrate through the first valve (150a) and the gas injection unit (130). A carrier gas containing sputtered atoms (S, Te, Se) from the second sputtering chamber (160b) may be sprayed onto a substrate through the second valve (150b) and the gas injection unit (130).

[0130] The first sputtering chamber (160a) and the second sputtering chamber (160b) can be operated alternately. After depositing a metal atomic layer by first sputtering of Mo and W, an exhaust or purge step may be further included. After depositing a chalcogen atomic layer by second sputtering of S, Te, and Se, an exhaust or purge step may be further included.

[0131] Figures 8a and 8b are plan views showing a substrate processing apparatus.

[0132] Figures 9a and 9b are cross-sections cut along the line AA' of Figure 8a.

[0133] Figure 10 is a timing diagram showing the operation of the substrate processing device of Figure 8a.

[0134] Referring to FIGS. 8a and 8b, FIGS. 9a and 9b, and FIG. 10, a substrate processing apparatus (400) according to one embodiment of the present invention comprises: a chamber (410); an upper structure (490) disposed in the upper part of the chamber (410) and including a plasma module (430) and a metal sputtering module (460) disposed spaced apart from the plasma module (430); and a susceptor (120) disposed in the lower part of the chamber (411) and supporting a first substrate (122a) facing the plasma module (430) and a second substrate (122b) facing the metal sputtering module (460). The metal sputtering module (460) forms a plasma with an inert gas on the second substrate (122b) and sputters the metal sputtering target (164) to transfer metal atoms sputtered from the metal sputtering target (164) to the second substrate (122b) to form a metal atomic layer. The plasma module (430) forms and activates a plasma with a reaction gas, and the reaction gas reacts with the metal atomic layer to form a thin film containing metal atoms. The plasma module (430) can receive a reaction gas and a purge gas for plasma formation through the flow paths (439a, 439b), respectively. The purge gas may be an inert gas.

[0135] The metal sputtering module (460) may receive a discharge gas through a flow path (166) to form a plasma. The discharge gas may be an inert gas. The metal sputtering target (164) may be connected to an RF power source to perform sputtering. The metal sputtering target (164) may be fixed to a target support (165).

[0136] The chamber (410) may, for example, be divided into four regions by partitions (491, 121). The number of partitions (491, 121) may vary depending on the size of the chamber and the process method. The chamber (410) may be heated by a heating unit (412).

[0137] The upper structure (490) is disc-shaped and can be driven by an upper drive unit (499) to rotate. The susceptor (120) can be rotated by a lower drive unit (129). At least one of the upper drive unit (499) and the lower drive unit (129) can be operated.

[0138] The plasma module (430) and the metal sputtering module (460) may be separated into different spaces by an upper partition (491). The upper partition (491) may be installed on the lower surface of the upper structure. The lower partition (121) may be installed on the upper surface of the susceptor. The plasma module (430) and the metal sputtering module (460) may be regularly arranged on a circumference of a certain radius.

[0139] The above substrates (122a, 122b) can be regularly arranged on a circumference of a certain radius of the susceptor (120).

[0140] Referring to FIG. 9a, the second substrate (122b) can receive metal atoms sputtered by the metal sputtering module (460) to form a metal atomic layer. Subsequently, an exhaust or purge step may be performed. Subsequently, the susceptor or the upper structure may be rotated. Subsequently, while the second substrate (122b) is aligned with the plasma module (430), the reaction gas may be decomposed into plasma to convert the metal atomic layer into a metal-containing thin film. The metal-containing thin film may be a two-dimensional TMD thin film. Subsequently, an exhaust or purge step may be performed. Subsequently, the susceptor or the upper structure may be rotated.

[0141] Referring to FIG. 9b, the second substrate (122b) can form a metal atomic layer by receiving metal atoms sputtered by the metal sputtering module (460). At the same time, the first substrate (122a) can stabilize the metal atomic layer by receiving purge gas by the plasma module (430). Additionally, the pressure in the space created by the plasma module (430) may be higher than the pressure in the space created by the metal sputtering module (460). Accordingly, the sputtered metal atoms formed by the operation of the metal sputtering module (460) may not diffuse into the space created by the plasma module (430).

[0142] The substrates (122a, 122b) may alternately perform a metal atomic layer deposition step by the metal sputtering module (460) and a metal-containing thin film formation step by the plasma module (430). The change between the metal atomic layer deposition step by the metal sputtering module (460) and the metal-containing thin film formation step by the plasma module (430) may be performed by rotating the upper structure or the susceptor.

[0143] Space-Division Sputtering Deposition according to one embodiment of the present invention can provide very high productivity by allowing substrates to move and react within physically separated zones. In the case of space-division sputtering deposition, a substrate holder (susceptor) supporting a plurality of substrates rotates at a constant angular velocity. Source sputtering metal atoms, a purge gas forming an air curtain, and a reaction gas are continuously supplied in each zone without interruption. Physically separated zones (source sputtering metal atom zone, reaction gas zone) utilize an air curtain to prevent the continuously supplied source sputtering metal atoms and reaction gas from moving to adjacent zones. While rotating at a constant speed, the substrates on the susceptor sequentially and repeatedly pass through the source sputtering metal atom zone, the purge gas zone (or air curtain zone), the reaction gas zone, and the purge gas zone (or air curtain zone).

[0144] According to a space-division sputtering deposition according to one embodiment of the present invention, the metal-containing thin film may be a transition metal dichalcogenide (TMD) such as MoS2, MoSe2, MoTe2, WS2, or WSe2. Alternatively, the metal-containing thin film may be a metal nitride film or a metal oxide film such as MoN. The Mo material is obtained by sputtering, and sulfur (S) may be obtained by decomposing a gas such as H2S by plasma.

[0145] A time-space division method according to one embodiment of the present invention may sequentially supply source sputtering metal atoms in a first region while in a stationary state, followed by supplying purge gas, and then, after rotating a substrate holder (susceptor), sequentially supply reaction gas in a second region, followed by supplying purge gas. The time-space division method separates the first region and the second region using an air curtain. While the rotating susceptor is stationary, the substrates sequentially receive source sputtering metal atoms and purge gas in the first region to form a metal atomic layer. Subsequently, while the susceptor is stationary after rotating 180 degrees, the substrates with the formed metal atomic layer sequentially receive reaction gas and purge gas in the second region to form a metal-containing thin film. The above process is repeated.

[0146] The present invention applies an air curtain-type spatial division method and an air curtain-type time-space division method to a deposition apparatus using a sputtering chamber. In particular, source sputtering metal atoms are provided from the sputtering chamber, allowing for a process similar to an atomic layer deposition process to be performed. Sputtering metal atoms are transferred from the sputtering chamber to the deposition chamber via a carrier gas. Sputtering metal atoms can be easily deposited on the low-temperature gas delivery pipe, gas injection unit, and the inner wall of the deposition chamber. Therefore, to prevent contamination caused by sputtering metal atoms depositing on unnecessary areas, the gas delivery pipe, gas injection unit, and deposition chamber can be heated to a predetermined temperature. Additionally, the susceptor can be heated or cooled to a temperature suitable for deposition.

[0147] Since the sputtering chamber must provide a constant flow rate of sputtering metal atoms, it can be controlled to provide a constant flow rate of sputtering metal atoms by monitoring the sputtering RF power, carrier gas pressure, etc., of the sputtering chamber to maintain a constant flow rate of sputtering metal atoms. The sputtering RF power of the sputtering chamber can operate in pulse mode, continuous mode, or a combination thereof to provide a stable flow rate of sputtering metal atoms. The plasma density or the flow rate of sputtering metal atoms can be controlled by adjusting the duty cycle of the pulse mode. The sputtering RF power of the sputtering chamber can be controlled to maintain a set power or to maintain a set voltage.

[0148] A gas injection unit that sprays sputtering metal atoms into a deposition chamber can be connected to an RF power source to generate a capacitively coupled plasma for stable discharge of metal atoms and to prevent deposition of metal atoms on the nozzle. The carrier gas can be heated to a high temperature of 300 degrees or higher and then injected into the sputtering chamber. The sputtering gas may be a noble gas such as argon or an inert gas.

[0149] The gas injection unit that sprays sputtering metal atoms may cause performance degradation due to deposition by the metal atoms. The gas injection unit that sprays sputtering metal atoms can form a capacitively coupled plasma using a carrier gas with a separate RF power source. Accordingly, the gas injection unit that sprays sputtering metal atoms can suppress clogging of the injection hole (or nozzle) by sputtering metal atoms.

[0150] FIG. 11a is an exploded perspective view showing a substrate processing apparatus equipped with a sputtering chamber according to one embodiment of the present invention.

[0151] FIG. 11b is a plan view of the deposition chamber of the substrate processing apparatus of FIG. 11a.

[0152] FIG. 11c is a conceptual diagram showing the operation of the stuffing chamber of the substrate processing device of FIG. 11a.

[0153] FIG. 11d is a conceptual diagram showing the operation of the reaction gas of the substrate processing apparatus of FIG. 11a.

[0154] FIG. 11e is a timing diagram showing the sputtering gas injection module, air curtain module, reaction gas injection module, and substrate rotation of the substrate processing device of FIG. 11a over time.

[0155] FIG. 11f is a timing diagram showing the process over time as viewed by a rotating substrate mounted on a rotating susceptor in the substrate processing device of FIG. 11a.

[0156] FIG. 11g is a timing diagram showing the process over time as viewed by a rotating substrate mounted on a rotating susceptor in the substrate processing device of FIG. 11a.

[0157] Referring to FIGS. 11a to 11g, a substrate processing apparatus (500) according to one embodiment of the present invention comprises: a deposition chamber (510) comprising a spatially separated first region (590a), a second region (590b), a third region (590c), and a fourth region (590d); a first gas injection unit (530) for injecting sputtering metal atoms into one or two regions among the first region (590a) and the third region (590c); a second gas injection unit (532) for injecting a reaction gas into one or two regions among the second region (590b) and the fourth region (590d); and a sputtering chamber (160) connected to the first gas injection unit and forming sputtering metal atoms to provide to the first gas injection unit (532).

[0158] A substrate processing device (500) according to one embodiment of the present invention further includes a susceptor (520) disposed in the lower part of the deposition chamber and supporting a substrate. The susceptor (520) can rotate at a constant speed.

[0159] A substrate processing device (500) according to one embodiment of the present invention may further include a first separation gas injection unit (534) that injects a purge gas to separate the space between the first region (590a) and the second region (590b), between the second region (590b) and the third region (590c), between the third region (590c) and the fourth region (590d), and between the fourth region (590d) and the first region (590a).

[0160] The second gas injection unit (532) can form a plasma with the reaction gas to activate it and react with the metal atoms adsorbed on the substrate to form a thin film containing metal atoms.

[0161] The sputtering chamber above can operate power in a continuous mode or voltage in a pulse mode, or mix the order of operation in a continuous mode or power in a pulse mode.

[0162] A method for forming a metal-containing thin film according to one embodiment of the present invention comprises a sputtering chamber (160) and a deposition chamber (510) comprising a spatially separated first region (590a), a second region (590b), a third region (590c), and a fourth region (590d), wherein a metal-containing thin film is formed on one or more substrates (122) on a susceptor (520) in the deposition chamber (510). A method for forming a metal-containing thin film according to one embodiment of the present invention comprises the steps of: spraying sputtering metal atoms onto one or more substrates (122) of the first region (590a); spraying a reaction gas onto one or more substrates of the second region (590b); spraying sputtering metal atoms onto one or more substrates of the third region (590c); and spraying a reaction gas onto one or more substrates of the fourth region (590d). One or more substrates (122) on the susceptor (520) rotate sequentially through the first region (590a), the second region (590b), the third region (590c), and the fourth region (590d).

[0163] The susceptor (520) is positioned at the bottom of the deposition chamber and supports the substrate (122). The susceptor (520) rotates at a constant speed.

[0164] The step of spraying a reaction gas onto one or more substrates of the second region involves forming and activating a plasma with the reaction gas to react with the metal atoms adsorbed on the substrates, thereby forming a metal atom-containing thin film. The step of spraying a reaction gas onto one or more substrates of the fourth region involves forming and activating a plasma with the reaction gas to react with the metal atoms adsorbed on the substrates, thereby forming a metal atom-containing thin film.

[0165] A method for forming a metal-containing thin film according to one embodiment of the present invention may further include the step of injecting a purge gas to separate the space between the first region (590a) and the second region (590b), between the second region (590b) and the third region (590c), between the third region (590c) and the fourth region (590d), and between the fourth region (590d) and the first region (590a).

[0166] The sputtering chamber (160) may operate power in a continuous mode or voltage in a pulse mode, or mix the order of operation in a continuous mode or power in a pulse mode.

[0167] A substrate processing apparatus (500) according to one embodiment of the present invention comprises: a deposition chamber (510); a first gas injection unit (530) disposed above the deposition chamber (510); a second gas injection unit (532) disposed spaced apart from the first gas injection unit (530) in an azimuth direction and disposed on the upper surface of the deposition chamber; a first separation gas injection unit (534) disposed between the first gas injection unit (530) and the second gas injection unit (532) and disposed on the upper surface of the deposition chamber (510); a sputtering chamber (160) connected to the first gas injection unit (530) and forming a plasma with a carrier gas and sputtering a metal sputtering target (164) to form metal atoms sputtered from the metal sputtering target (164) and provide them to the first gas injection unit (530); and a reaction gas supply unit (552) providing a reaction gas to the second gas injection unit (532). It includes a separation gas supply unit (553) that forms an air curtain by providing purge gas to the first separation gas injection unit (534) to prevent mixing of the reaction gas and the carrier gas; and a susceptor (520) that is positioned in the lower part of the deposition chamber (510) and supports a substrate.

[0168] The sputtering chamber (160) and the first gas injection unit (530) transfer the sputtered metal atoms to the substrate (122) to form a metal atomic layer. The reaction gas reacts with the metal atomic layer to form a thin film containing metal atoms.

[0169] The above substrate processing device (500), similar to a spatially divided atomic layer deposition device, includes a first region and a third region corresponding to a first gas injection unit (530) that injects sputtering metal atoms and a carrier gas, a second region and a fourth region corresponding to a second gas injection unit (532) that injects a reaction gas, and a first separation gas injection unit (534) that injects a purge gas to suppress mixing of the carrier gas and the reaction gas. The first gas injection unit (530), the third gas injection unit (534), and the second gas injection unit (532) may be sequentially arranged in an azimuth direction on the top or lid of the deposition chamber (510). There may be a plurality of the first gas injection unit (530), the first separation gas injection unit (534), and the second gas injection unit (532). For example, the first gas injection unit (530) may be two, the second gas injection unit (532) may be two, and the first separation gas injection unit (534) may be four. Accordingly, along the azimuth direction, they may be arranged sequentially as a first gas injection unit, a first separation gas injection unit, a second gas injection unit, a first separation gas injection unit, a first gas injection unit, and a first separation gas injection unit.

[0170] The deposition chamber (510) may be a cylindrical chamber having a lid (511a) and a body (511). The deposition chamber (510) may be formed of a metal material and electrically grounded.

[0171] The first gas injection unit (530) may be mounted on the lid (511a) of the deposition chamber. The first gas injection unit (530) may be in the shape of a rectangle extending radially from the center of the lid. The first gas injection unit (530) may have a structure similar to that of the gas injection unit (130).

[0172] The first gas injection unit (530) may be a gas shower head equipped with a perforated plate electrode capable of forming plasma. The first gas injection unit (530) may be a detachable type mounted within the deposition chamber or an integrated shower head coupled to the deposition chamber.

[0173] The first gas injection unit (530) may be positioned at the top of the deposition chamber facing the susceptor (520). The first gas injection unit (530) may be heated by a separate heater. The first gas injection unit (530) may include a perforated plate electrode to which an RF power source (140a) and an impedance matching network (140b) are connected. The perforated plate electrode may form plasma at the bottom of the first gas injection unit (530). The first gas injection unit (530) may provide a buffer space by means of a baffle. The perforated plate electrode is connected to the RF power source (140a) and may form plasma using a carrier gas in the space below the perforated plate electrode. The plasma prevents the deposition of metal atoms on the perforated plate electrode and may help the adsorption of metal atoms by providing energy to the substrate (122). The first gas injection unit (530) is two in number and can be arranged with a 180-degree difference from each other.

[0174] The second gas injection unit (532) may be positioned at the top of the deposition chamber facing the susceptor (520). The second gas injection unit (532) may be in the shape of a rectangle extending radially from the center of the lid (511a). The second gas injection unit (532) may be heated by a separate heater. The second gas injection unit (532) may include a perforated plate electrode to which another RF power source (140a) is connected. The perforated plate electrode may form plasma at the bottom of the second gas injection unit. The second gas injection unit may provide a buffer space by means of a baffle. The perforated plate electrode is connected to an RF power source and may form plasma using a reaction gas in the space below the electrode. The plasma may decompose the reaction gas to aid in a chemical reaction with metal atoms adsorbed on the substrate (122). There may be two second gas injection units (532) and they may be positioned 180 degrees apart from each other. The second gas injection unit (532) can form a plasma with the reaction gas to activate it and react with the metal atomic layer to form the metal atomic-containing thin film.

[0175] The first separation gas injection unit (534) may be positioned at the top of the deposition chamber facing the susceptor (520). The first separation gas injection unit (534) may be in the shape of a rectangle extending radially from the center of the lid (511a). The first separation gas injection unit (534) includes a perforated plate that injects purge gas radially. The injected purge gas may form an air curtain (purge gas curtain). The air curtain (purge gas curtain) may provide a pressure gradient to prevent the carrier gas injected into the lower space of the first gas injection unit (530) from moving to the lower space of the adjacent second gas injection unit (532). The first separation gas injection unit (534) may also inject purge gas at the center of the lid (511a) to prevent the carrier gas from moving through the central area to the space where the reaction gas is injected. For example, the first separation gas injection unit (534) may be four in number and arranged with a 90-degree difference from each other.

[0176] The sputtering chamber (160) may include: a sputtering chamber body (162) providing a sealed space; a metal sputtering target (164) disposed within the sputtering chamber body (162); a target support member (165) supporting the metal target (164); a power supply member (168a) supplying power to the metal sputtering target (164); and a carrier gas supply member (166) supplying the carrier gas to the sputtering chamber body (162). The sputtering chamber (160) may sputter by applying power or voltage in a pulse mode.

[0177] The reaction gas supply unit (552) can inject a reaction gas onto the susceptor (520) through the second gas injection unit (534). The reaction gas varies depending on the material to be deposited and may be H2S, H2Se, H2Te, or N2.

[0178] The separation gas supply unit (553) can inject purge gas onto the susceptor (520) through the third gas injection unit (534). The purge gas may be an inert gas or nitrogen gas. The purge gas forms an air curtain, and as the susceptor (520) rotates, when the substrate (122) is exposed to the purge gas, the substrate (122) can be exposed to the purge gas to remove unnecessary metal atoms or unnecessary adsorbed reaction gases.

[0179] The susceptor (520) can accommodate and support a plurality of substrates (122) on a constant circumference. The susceptor (520) can rotate at a constant speed using a driving means such as a motor. For example, the substrates (122) may be four.

[0180] The exhaust pump (144) can exhaust the interior of the deposition chamber and maintain a predetermined pressure using process gases (carrier gas, purge gas, and reaction gas).

[0181] Referring to FIGS. 11e, 11f, and 11g, a method for forming a metal-containing thin film according to one embodiment of the present invention may form a metal-containing thin film on substrates arranged in an azimuthal direction on a susceptor. The method for forming the metal-containing thin film comprises: a step of preparing substrates (122) arranged on the susceptor (520) of a deposition chamber (510); a step of supplying a carrier gas containing sputtered metal atoms formed from a sputtering target (164) located in each of a plurality of sputtering chambers (160) separated from the deposition chamber (510) and coupled to the deposition chamber (510) to the substrates (122) to deposit a metal atomic layer on the substrates (122) (S510); and a step of chemically reacting the metal atomic layer with a reaction gas to form a metal-containing thin film containing the metal atoms on the substrates (122) (S520).

[0182] The steps of depositing the metal atomic layer and forming the metal-containing thin film containing the metal atoms on the substrates (122) can be performed while the substrates (122) are continuously rotated.

[0183] The sputtering module can continuously supply carrier gas and sputtered metal atoms to the deposition chamber (510) through the sputtering chamber (160) and the first gas distribution unit (530). The sputtered metal atoms can be supplied in a pulse form by operating the sputtering RF power in pulse mode.

[0184] The air curtain module can continuously provide an air curtain radially through the air curtain purge gas supply unit (553) and the third gas injection unit (534).

[0185] The reaction gas module can continuously provide reaction gas through the reaction gas supply unit (552) and the second gas injection unit (532).

[0186] The substrates (122) can be mounted on a susceptor (520) and rotated at a constant speed. Accordingly, the substrate (122) mounted on the susceptor and rotating at a constant speed can undergo a process similar to atomic layer deposition over time.

[0187] The method for forming the metal-containing thin film may further include the step (S510) of depositing a metal atomic layer on the substrates (122) and the step (S512) of exposing the substrates (122) to purge gases; and the step (S512) of exposing the substrates (122) to purge gases after the step of forming the metal-containing thin film.

[0188] The metal atoms are Mo and W, the metal-containing thin film is MoS2, MoSe2, MoTe2, WS2, WSe2, MoN, and the reaction gas may be H2S, H2Se, H2Te, or N2.

[0189] The step of depositing a metal atomic layer on the substrates (122) can be performed by forming a plasma in the deposition chamber (510) using the carrier gas.

[0190] The step of forming a metal-containing thin film containing metal atoms by chemically reacting the metal atomic layer with a reaction gas can be performed by forming a plasma in the deposition chamber (510) using the reaction gas.

[0191] According to a modified embodiment of the present invention, a method for forming a metal-containing thin film according to one embodiment of the present invention comprises: a) sputtering a metal sputtering target (166) with a carrier gas in each of the sputtering chambers (160) spaced apart from each other, and flowing the metal atoms sputtered from the metal sputtering target into a deposition chamber (510) connected to the sputtering chambers (160) using the carrier gas to form a metal atomic layer on substrates (122) arranged on a susceptor (520) of the deposition chamber (510) (S510); and b) providing a reaction gas to the deposition chamber (510) to form a metal-containing thin film containing the metal atoms using the reaction gas (S520).

[0192] Steps a) and b) above are performed while the substrates (122) are continuously rotating in the susceptor (520). The flow of metal atoms sputtered from the metal sputtering target into the deposition chambers connected to the sputtering chambers using the carrier gas operates continuously without stopping. The supply of the reaction gas to the deposition chambers operates continuously without stopping.

[0193] A method for forming a metal-containing thin film according to one embodiment of the present invention may further include: a step (S512) in which the substrates (122) are exposed to a purge gas after the step of depositing a metal atomic layer on the substrates (122); and a step (S512) in which the substrates (122) are exposed to a purge gas after the step of forming the metal-containing thin film.

[0194] After the step of depositing a metal atomic layer on the substrates (122), the substrates (122) are exposed to a purge gas (S512); and after the step of forming the metal-containing thin film, the substrates (122) are exposed to a purge gas (S512) can be performed while the substrates (122) rotate and pass through an air curtain area formed by the purge gas.

[0195] The metal atoms are Mo and W, the metal-containing thin film is MoS2, MoSe2, MoTe2, WS2, WSe2, MoN, and the reaction gas may be H2S, H2Se, H2Te, or N2.

[0196] FIG. 12a is an exploded perspective view showing a substrate processing apparatus according to another embodiment of the present invention.

[0197] FIG. 12b is a plan view showing the substrate processing apparatus of FIG. 12a.

[0198] FIG. 12c is a conceptual diagram showing the substrate processing apparatus of FIG. 12a.

[0199] FIG. 12d is a timing diagram showing the operation of the substrate processing device of FIG. 12a.

[0200] Referring to FIGS. 12a to 12d, a substrate processing apparatus (600) according to another embodiment of the present invention comprises: a deposition chamber (610) comprising a first region (690a) and a second region (690b); a first gas injection unit (630) for injecting sputtering metal atoms into the first region (690a); a second gas injection unit (632) for injecting a reaction gas into the second region (690b); a first separation gas injection unit (634) for injecting a purge gas to separate the space between the first region (690a) and the second region (690b); and a sputtering chamber (160) connected to the first gas injection unit (630) and forming the sputtering metal atoms to provide to the first gas injection unit.

[0201] The sputtering chamber (160) providing the sputtering metal atoms to the first region (690a) may operate the power in a continuous mode or a pulse mode, or may mix the order of operation in a continuous mode and a pulse mode.

[0202] The sputtering metal atoms can be supplied to the substrate (122) of the deposition chamber (610) by passing through the first gas injection unit (630), which has a plurality of injection holes, together with the carrier gas injected into the sputtering chamber (160).

[0203] The first gas injection unit (630) can sequentially inject the first purge gas into the first region (690a) of the deposition chamber (610) after injecting the sputtering metal atoms into the first region. The second gas injection unit (632) can sequentially inject the second purge gas into the second region (690b) after injecting the reaction gas into the second region.

[0204] When the susceptor (620) supporting the substrates (122) is in a stationary state, the first gas injection unit (630), the second gas injection unit (632), and the separation gas injection unit (634) are operated. After the susceptor (620) is rotated 180 degrees, the first gas injection unit (630), the second gas injection unit (632), and the separation gas injection unit (634) are operated when the susceptor (620) is in a stationary state.

[0205] A method for forming a metal-containing thin film according to one embodiment of the present invention comprises a deposition chamber (610) including a sputtering chamber (160) and a first region (690a) and a second region (690b), and a method for forming a metal-containing thin film on one or more substrates (122) on a susceptor (620) in the deposition chamber (610), comprising: a step of sputtering metal atoms onto one or more substrates (122) of the first region (690a); a step of rotating the susceptor (620) to move one or more substrates (122) of the first region (690a) to the second region; and a step of spraying a reaction gas onto one or more substrates (122) of the second region (690b).

[0206] The step of spraying sputtering metal atoms onto one or more substrates of the first region involves spraying the sputtering metal atoms while the susceptor is stationary. The step of spraying a reaction gas onto one or more substrates of the second region involves spraying the reaction gas while the susceptor is stationary.

[0207] A method for forming a metal-containing thin film according to one embodiment of the present invention further includes the step of injecting a purge gas to separate the space between the first region and the second region.

[0208] A method for forming a metal-containing thin film according to one embodiment of the present invention may further include the step of spraying a purge gas onto one or more substrates in the first region between the step of spraying sputtering metal atoms onto one or more substrates in the first region and the step of moving one or more substrates in the first region to the second region by rotating a susceptor.

[0209] A method for forming a metal-containing thin film according to one embodiment of the present invention may further include the step of injecting a purge gas onto one or more substrates in the second region after the step of injecting a reaction gas onto one or more substrates in the second region.

[0210] A substrate processing device (600) according to another embodiment of the present invention comprises: a deposition chamber (610); a susceptor (620) installed inside the deposition chamber (610) and on which a substrate (122) is mounted and supported; a first gas injection unit (630) installed in the deposition chamber (610) and sequentially injecting purge gas into a first internal region (690a) of the deposition chamber (610) after injecting sputtering metal atoms to be deposited on the substrate (122); and a second gas injection unit (632) installed in the deposition chamber (610) and sequentially injecting purge gas into a second internal region of the deposition chamber (610) to react with the sputtering metal atoms to form a metal-containing thin film. The deposition chamber (610) includes: a first separation gas injection unit (634) that provides an air curtain by injecting a purge gas between the second region and the first region so that the sputtering metal atoms and the reaction gas do not mix with each other; and a sputtering chamber (160) connected to the first gas injection unit (630) and sputtering a metal sputtering target (164) with a carrier gas to form sputtered metal atoms from the metal sputtering target, and providing the sputtering metal atoms and the carrier gas to the first gas injection unit (630).

[0211] A substrate processing device (600) according to one embodiment of the present invention operates similarly to a time-space divided atomic layer deposition device. A sputtering module can perform a metal atom adsorption process on a first substrate by providing sputtered metal atoms to the susceptor (620) along with a carrier gas while the susceptor (620) is stationary, and then providing a purge gas to the susceptor (620). A reaction gas module can perform a metal-containing thin film formation process on a second substrate by providing a reaction gas to the susceptor (620) while the susceptor (620) is stationary, and then providing a purge gas to the susceptor. Subsequently, the susceptor (629) can be rotated so that the first substrates perform metal-containing thin film formation and the second substrates perform a metal atom adsorption process. These processes can be repeated alternately.

[0212] When the susceptor (620) is in a stationary state, the first gas injection unit (630), the second gas injection unit (632), and the first separation gas injection unit (634) are operated. After the susceptor (620) is rotated 180 degrees, the first gas injection unit (630), the second gas injection unit (632), and the first separation gas injection unit (634) are operated when the susceptor (620) is in a stationary state. The sputtering chamber can sputter by applying power or voltage in a pulse mode.

[0213] The deposition chamber (610) may be a cylindrical chamber comprising a body (611) and a lid (611a). The deposition chamber (610) may be formed of a metal material and electrically grounded.

[0214] The susceptor (620) can accommodate and support a plurality of substrates (122). The susceptor (620) can be driven using a driving means such as a motor to rotate after the process is performed in a stationary state and then resume the process from a stationary state. For example, there may be four substrates. Two substrates may be spaced apart from each other in a first region (690a) corresponding to the first gas injection unit (630). The other two substrates may be spaced apart from each other in a second region (690b) corresponding to the second gas injection unit (632). The first region (690a) and the second region (690b) may be separated by a third region (690c) corresponding to the first separation gas injection unit (634).

[0215] The exhaust pump can exhaust the interior of the deposition chamber and maintain a predetermined pressure using process gases (carrier gas, purge gas, and reaction gas).

[0216] The first gas injection unit (630) may be positioned at the top of the deposition chamber facing the susceptor. The first gas injection unit (630) may be heated by a separate heater. The first gas injection unit (630) may include a perforated plate electrode to which an RF power source (140a) is connected. The perforated plate electrode may form plasma at the bottom of the first gas injection unit (630). The first gas injection unit (630) may provide a buffer space by means of a baffle. The perforated plate electrode is connected to an RF power source and may form plasma using a carrier gas in the space below the perforated plate electrode. The plasma prevents the deposition of metal atoms on the perforated plate electrode and can provide energy to the substrate to aid in the adsorption of metal atoms. The first gas injection unit (630) may be a single unit and may be shaped like a ground ball with two circles attached to each other.

[0217] The sputtering chamber (160) may include: a sputtering chamber body (162) providing a sealed space; a metal sputtering target (164) disposed within the sputtering chamber body (162); a target support member (165) supporting the metal target (164); a power supply member (168a) supplying power to the metal sputtering target (164); and a carrier gas supply member (166) supplying the carrier gas to the sputtering chamber body (162). The sputtering chamber may sputter by applying power or voltage in a pulse mode.

[0218] The first purge gas supply unit (160a) can supply a first purge gas to the first gas injection unit (630). The first purge gas may be an inert gas or N2 gas.

[0219] The second gas injection unit (632) may be positioned at the top of the deposition chamber (610) so as to face the susceptor. The second gas injection unit (632) may be shaped like a ground ball with two circles attached to each other. The second gas injection unit (632) may be heated by a separate heater. The second gas injection unit (632) may include a perforated plate electrode to which another RF power source is connected. The perforated plate electrode may form plasma at the bottom of the reaction gas injection unit. The second gas injection unit (632) may provide a buffer space by means of a baffle. The perforated plate electrode is connected to an RF power source and may form plasma using a reaction gas in the space below the perforated plate electrode. The plasma may decompose the reaction gas to facilitate a chemical reaction with metal atoms adsorbed on the substrate. The second gas injection unit (632) may form and activate plasma with the reaction gas to react with the metal atom layer and form the metal atom-containing thin film.

[0220] The reaction gas supply unit (652a) can supply a reaction gas to the second gas injection unit (632). The reaction gas may be H2S, H2Se, H2Te, or N2.

[0221] The second purge gas supply unit may provide a second purge gas to the second gas injection unit (632). The second purge gas may be an inert gas or N2 gas.

[0222] The plasma treatment gas supply unit can supply plasma treatment gas to the second gas injection unit (632). The plasma treatment gas may be hydrogen gas, inert gas, or N2 gas. The plasma treatment gas can be activated by plasma to remove impurities on the substrate.

[0223] The first separation gas injection unit (634) may be positioned at the top of the deposition chamber (610) so as to face the susceptor (620). The first separation gas injection unit (634) may be in the shape of a rectangle extending radially from the center of the lid (611a). The first separation gas injection unit (634) includes a perforated plate that injects purge gas radially. The injected purge gas may form an air curtain (purge gas curtain). The air curtain (purge gas curtain) may provide a pressure gradient to prevent the carrier gas injected into the lower space of the first gas injection unit (630) from moving to the lower space of the adjacent second gas injection unit (632). The first separation gas injection unit (634) may also inject purge gas at the center of the lid (611a) to prevent the carrier gas from moving through the central area to the space where the reaction gas is injected. The first separation gas injection unit (634) may include a perforated plate electrode to which another RF power source (140a) is connected. The perforated plate electrode may form plasma using purge gas at the bottom of the first separation gas injection unit (634). The purge gas supply unit (653) may provide purge gas to the first separation gas injection unit (634). The purge gas may be an inert gas or N2 gas.

[0224] Referring to FIG. 12d, a method for forming a metal-containing thin film according to another embodiment of the present invention forms a metal-containing thin film on substrates arranged on a susceptor. The method for forming the metal-containing thin film comprises: preparing substrates (122) arranged on the susceptor (610) of a deposition chamber (610); supplying a carrier gas containing sputtering metal atoms formed from a sputtering target located in a sputtering chamber (160) separated from the deposition chamber (610) and coupled to the deposition chamber to the substrates (122) to adsorb a metal atomic layer on the substrates (122), and then supplying a first purge gas; and chemically reacting the metal atomic layer with a reaction gas to form a metal-containing thin film containing the metal atoms on the substrates (122), and then supplying a second purge gas.

[0225] The steps of adsorbing the metal atomic layer and forming a metal-containing thin film containing the metal atoms on the substrates (122) are performed while the substrates are stationary.

[0226] The method for forming the metal-containing thin film may further include the step of rotating the susceptor.

[0227] A method for forming a metal-containing thin film according to another embodiment of the present invention forms a metal-containing thin film on substrates (122) arranged on a susceptor (610). The method for forming the metal-containing thin film comprises: a) forming a plasma with a carrier gas in a sputtering chamber (160) and sputtering a metal sputtering target (164), and then using the carrier gas to flow metal atoms sputtered from the metal sputtering target (164) into a deposition chamber (610) connected to the sputtering chamber (160) to form a metal atom layer on substrates (122) arranged on a susceptor (620) of the deposition chamber (610), and then purging using a first purge gas; b) forming a metal-containing thin film containing the metal atoms using a reaction gas, and then purging using a second purge gas; and c) providing a third purge gas as a separating gas so that the carrier gas and the reaction gas do not mix with each other.

[0228] Steps a), b), and c) are performed while the substrates (122) are in a stationary state. After the susceptor (610) is rotated 180 degrees, steps a), b), and c) are performed while the substrates are in a stationary state.

[0229] The metal atoms are Mo and W, the metal-containing thin film is MoS2, MoSe2, MoTe2, WS2, WSe2, MoN, and the reaction gas may be H2S, H2Se, H2Te, or N2.

[0230] Although the present invention has been illustrated and described with respect to specific preferred embodiments, the present invention is not limited to these embodiments and includes all various forms of embodiments that can be practiced by a person skilled in the art without departing from the technical spirit of the present invention as claimed in the patent claims.

Claims

1. A method for forming a metal-containing thin film on a substrate, Step of preparing a substrate in a deposition chamber; A step of adsorbing sputtering metal atoms formed from a sputtering target located in a sputtering chamber onto the substrate; and A method for forming a metal-containing thin film comprising the step of forming a metal-containing thin film by spraying a reaction gas into the deposition chamber.

2. In Paragraph 1, The step of forming a metal-containing thin film by spraying a reaction gas into the deposition chamber is, A method for forming a metal-containing thin film characterized by forming the metal-containing thin film including a step of forming a plasma.

3. In Paragraph 1, The above sputtering metal atom is one of Mo or W, and The metal-containing thin film is at least one of MoS2, MoSe2, MoTe2, WS2, WSe2, and MoN, and A method for forming a metal-containing thin film characterized in that the reaction gas is at least one of H2S, H2Se, H2Te, and N2.

4. In Paragraph 1, The step of adsorbing sputtering metal atoms formed from a sputtering target located in a sputtering chamber onto the substrate is: The above sputtering metal atoms are formed from the sputtering target located in a sputtering chamber separated from the deposition chamber, and A method for forming a metal-containing thin film, characterized in that the sputtering metal atoms are supplied to the substrate together with a carrier gas injected into the sputtering chamber.

5. In Paragraph 4, A method for forming a metal-containing thin film, characterized in that the sputtering metal atoms are supplied to the substrate by passing through a gas injection unit having a plurality of injection holes together with the carrier gas injected into the sputtering chamber.

6. A deposition chamber comprising a first region and a second region; A first gas injection unit that sprays sputtering metal atoms into the first region; A second gas injection unit that injects reaction gas into the second region above; A first separation gas injection unit that injects purge gas to separate the space of the first region and the second region; and A substrate processing apparatus characterized by including a sputtering chamber connected to the first gas injection unit and forming the sputtering metal atoms and providing them to the first gas injection unit.

7. In Paragraph 6, A sputtering chamber that provides the sputtering metal atoms to the first region is, Operate power in continuous mode or pulse mode, or A substrate processing device characterized by mixing the order of operation between continuous power mode and pulse power mode.

8. In Paragraph 7, A method for forming a metal-containing thin film, characterized in that the sputtering metal atoms are supplied to a substrate of the deposition chamber by passing through a first gas injection unit having a plurality of injection holes together with a carrier gas injected into the sputtering chamber.

9. In Paragraph 6, The first gas injection unit sprays the sputtering metal atoms into the first region and then sequentially sprays the first purge gas into the first region of the deposition chamber. A method for forming a metal-containing thin film, characterized in that the second gas injection unit injects the reaction gas into the second region and then sequentially injects the second purge gas into the second region of the deposition chamber.

10. In Paragraph 6, When the susceptor supporting the substrates is in a stationary state, the first gas injection unit, the second gas injection unit, and the separation gas injection unit operate, and A substrate processing apparatus characterized in that, after the susceptor is rotated 180 degrees, the first gas injection unit, the second gas injection unit, and the separation gas injection unit operate while the susceptor is in a stationary state.

11. A method comprising a sputtering chamber and a deposition chamber including a first region and a second region, wherein a metal-containing thin film is formed on one or more substrates on a susceptor in the deposition chamber. A step of spraying sputtering metal atoms onto one or more substrates of the first region; A step of moving one or more substrates of the first region to the second region by rotating the susceptor; and A method for forming a metal-containing thin film characterized by including the step of spraying a reaction gas onto one or more substrates of the second region.

12. In Paragraph 11, The step of spraying sputtering metal atoms onto one or more substrates of the first region comprises spraying the sputtering metal atoms while the susceptor is stationary, and A method for forming a metal-containing thin film, wherein the step of spraying a reaction gas onto one or more substrates of the second region is characterized by spraying the reaction gas while the susceptor is stationary.

13. In Paragraph 11, A method for forming a metal-containing thin film, characterized by further including the step of injecting a purge gas to separate the space between the first region and the second region.

14. In Paragraph 11, Between the step of sputtering metal atoms onto one or more substrates of the first region and the step of moving one or more substrates of the first region to the second region by rotating a susceptor, A method for forming a metal-containing thin film, characterized by further including the step of spraying a purge gas onto one or more substrates of the first region.

15. In Paragraph 14, A method for forming a metal-containing thin film, characterized by further including the step of spraying a purge gas onto one or more substrates in the second region after the step of spraying a reaction gas onto one or more substrates in the second region.

16. A deposition chamber comprising spatially separated first, second, third, and fourth regions; A first gas injection unit that injects sputtering metal atoms into one or both of the first and third regions; A second gas injection unit for injecting reaction gas into one or both of the second region and the fourth region; and A substrate processing apparatus characterized by including a sputtering chamber connected to the first gas injection unit and forming sputtering metal atoms to provide to the first gas injection unit.

17. In Paragraph 16, A susceptor disposed in the lower part of the deposition chamber and supporting a substrate; further comprising A substrate processing device characterized by the above-mentioned susceptor rotating at a constant speed.

18. In Paragraph 16, A substrate processing apparatus further comprising a first separation gas injection unit for injecting purge gas to separate the space between the first region and the second region, between the second region and the third region, between the third region and the fourth region, and between the fourth region and the first region.

19. In Paragraph 16, A substrate processing device characterized by the above-mentioned second gas injection unit forming and activating a plasma with the above-mentioned reaction gas to react with the metal atoms adsorbed on the substrate to form a metal atom-containing thin film.

20. In Paragraph 16, The above sputtering chamber is: Operate power in continuous mode or voltage in pulse mode, or A substrate processing device characterized by mixing the order of operation between continuous mode and pulse mode.

21. A method comprising a sputtering chamber and a deposition chamber including spatially separated first region, second region, third region, and fourth region, wherein the deposition chamber forms a metal-containing thin film on one or more substrates on a susceptor, A step of spraying sputtering metal atoms onto one or more substrates of the first region; A step of spraying a reaction gas onto one or more substrates in the second region; A step of sputtering metal atoms onto one or more substrates of the third region; and The method includes the step of spraying a reaction gas onto one or more substrates of the fourth region; A method for forming a metal-containing thin film characterized by sequentially rotating one or more substrates on the susceptor in the first region, the second region, the third region, and the fourth region.

22. In Article 21, A susceptor disposed in the lower part of the deposition chamber and supporting a substrate; further comprising A method for forming a metal-containing thin film characterized by the above-mentioned susceptor rotating at a constant speed.

23. In Article 21, The step of spraying a reaction gas onto one or more substrates of the second region above comprises forming and activating a plasma with the reaction gas to react with the metal atoms adsorbed on the substrate to form a metal atom-containing thin film, and A method for forming a metal-containing thin film, characterized in that the step of spraying a reaction gas onto one or more substrates of the fourth region above forms a plasma with the reaction gas to activate it and react with the metal atoms adsorbed on the substrate to form a metal atom-containing thin film.

24. In Paragraph 21, A method for forming a metal-containing thin film, characterized by further including the step of injecting a purge gas to separate the space between the first region and the second region, between the second region and the third region, between the third region and the fourth region, and between the fourth region and the first region.

25. In Paragraph 21, The above sputtering chamber is: Operate power in continuous mode or voltage in pulse mode, or A substrate processing device characterized by mixing the order of operation between continuous mode and pulse mode.

Images