Graphene photodiode controlled photonic properties with rare earth element

Abstract

The invention relates to a graphene photodiode consisting of a pn junction, whose photonic properties are controlled by a rare earth element, used in optoelectronic applications. The structure of this photodiode is n-RGO (reduced graphene oxide) / rare earth element / p-RGO (reduced graphene oxide).

Description

[0001] GRAPHENE PHOTODIODE CONTROLLED PHOTONIC PROPERTIES WITH RARE EARTH ELEMENT

[0002] TECHNICAL FIELD

[0003] The invention relates to a graphene photodiode consisting of a pn junction, whose photonic properties are controlled by a rare earth element, used in optoelectronic applications. The structure of this photodiode is n-RGO (reduced graphene oxide) / rare earth element / p-RGO (reduced graphene oxide).

[0004] PRIOR ART

[0005] p-n junction diodes are manufactured using p-type silicon and n-type semiconductor materials. Pn junction diodes are used in electronic technology as diodes, photodiodes, and sensors. These diodes act as rectifiers in electronic circuits. Pn junctions convert alternating current (AC) to direct current (DC). Furthermore, when light falls on pn junctions, they exhibit photoconductivity or photovoltaic properties, making them suitable for use in optoelectronic applications. However, there is a need for new photodiodes that are functional and easy to manufacture.

[0006] BRIEF DESCRIPTION OF THE INVENTION

[0007] This invention is related to a graphene photodiode consisting of a pn junction with rare earth element n-RGO / rare earth element / p-RGO photonic properties controlled for use in optoelectronic applications. That is, the structure of this photodiode is n-RGO (reduced graphene oxide) / rare earth element / p-RGO.

[0008] The conductivity of graphene oxide is converted to p-type electrical conductivity by oxidation. Graphene oxide is reduced to reduced graphene oxide (RGO) by heat. Reduced graphene oxide is converted to n-type electrical conductivity by nitrogen doping.

[0009] LIST OF FIGURES

[0010] Figure 1. Schematic View of Graphene Photodiode

[0011] Correspondences of the Numbers Shown in the Figures

[0012] 1. Bottom electrode2. p-type graphene

[0013] 3. Rare earth element

[0014] 4. n-type graphene

[0015] 5. Top electrode

[0016] 6. Graphene photodiode

[0017] DETAILED DESCRIPTION OF THE INVENTION

[0018] The graphene photodiode (6) is characterized by its components: bottom electrode (1), p-type graphene (2), rare earth element (3), n-type graphene (4), and top electrode (5).

[0019] Graphene oxide (GO), reduced graphene oxide (RGO), and rare earth elements are used in the fabrication of the photodiode. In this disclosure, the optical band gap of p-type reduced graphene oxide (p-RGO) is adjusted to values between 0.02 eV and 1.5 eV with the oxidation time.

[0020] n-type reduced graphene oxide (n-RGO) is produced by nitrogen (N) doping. The type of electrical conductivity of the reduced graphene oxide is adjusted by the nitrogen ratio. The nitrogen doping ratio varies with the forbidden energy gap of the graphene oxide.

[0021] In an n-RGO / p-RGO rare earth element / p-RGO diode structure, the n-RGO forms a pn junction with the p-type rare earth element. The p-type rare earth element and the p-RGO structure form a pp junction. In an n-RGO / p-RGO rare earth element / p-RGO diode structure, the pn and pp junctions consist of two junctions connected in series within the same structure.

[0022] In our invention, when n-RGO is used instead of p-RGO material, the n-RGO / p-type rare earth element / n-RGO structure consists of a pn-pn junction connected in series within the same structure. In this disclosure, the np junction and the pn junction consist of two pn junctions connected in series.

[0023] In our invention, at least one of the p-type rare earth elements; samarium oxide (SmaOs) and terbium oxide semiconductors and n-type rare earth elements; The disclosure is comprising of at least one of the following semiconductors: cerium oxide (CeO2), europium oxide, and erbium oxide.

[0024] The photonic properties of this invention are based on the creation of extra carrier charges in an n-RGO / type rare earth element / p-RGO diode structure using photons at wavelengths of 364, 405, 495, and 560 nm.The invention operates in photoconductivity and photocapacitance modes. Operation in photoconductivity and photocapacitance modes is achieved with photons generated at wavelengths of 364, 405, 495, and 560 nm. The photoconductivity and photocapacitance modes are controlled by a rare earth element. The photoconductivity gain is at least 100, and the photocapacitance gain is at least 10.

[0025] The barrier height of the invention is controlled by a rare earth element, and the barrier height is at least 0.65 eV. The barrier height of the disclosure is the energy difference between the work functions of the n-type and p-type semiconductors of the disclosure.

[0026] In our invention, the rectification ratio is controlled by a rare earth element, and the rectification ratio is at least 1.5. In this disclosure, the rectification ratio is the ratio of the reverse supply current to the forward supply current at a constant voltage.

[0027] In our invention, the rectification ratio and barrier height are controlled by the amount of nitrogen doping.

[0028] In our invention, graphene oxide (GO) is converted to reduced graphene oxide (RGO) by thermal treatment. When GO and RGO are combined without any doping, a pn junction is formed.

[0029] In our invention, the photoresponse region of the photodiode is changed by replacing the rare earth element semiconductor. In this disclosure, with samarium oxide, , the photoresponse is shifted to the UV region. The photoresponse region of the photodiode is changed by replacing the rare earth element semiconductor. In this disclosure, the photoresponse is shifted to the UVA region with erbium oxide.

[0030] In our invention, the photoresponse region of the photodiode is also altered by the amount of nitrogen added to the RGO.

Claims

CLAIMS1. The graphene photodiode (6) composed of pn junction is characterized by;graphene oxide (GO), reduced graphene oxide (RGO), p-type rare earth elements, and n-type rare earth elements.

2. The graphene photodiode (6) mentioned in Claim 1 is characterized by; the optical band gap of p-type reduced graphene oxide (p-RGO) being between 0.02 eV and 1.5 eV.

3. The graphene photodiode (6) mentioned in Claim 1 is characterized by; the presence of nitrogen (N) doping of n-type reduced graphene oxide (n-RGO).

4. The graphene photodiode (6) mentioned in Claim 1 is characterized by; being a diode that forms a pn junction between n-RGO and p-type rare earth element.

5. The graphene photodiode (6) mentioned in Claim 1 is characterized by being a diode that forms a pp junction between p-type rare earth element and p-RGO structure.

6. The graphene photodiode (6) mentioned in Claim 1 is characterized by; being a diode that consists of two junctions of pn and pp structure connected in series within the same structure in the n-RGO / rare earth element / p-RGO diode structure.

7. The graphene photodiode (6) mentioned in Claim 1 is characterized by; being a diode operated in photoconductivity and photocapacitance mode.

8. The graphene photodiode (6) mentioned in Claim 1 is characterized by; being a diode controlled by rare earth elements of photoconductivity and photocapacitance modes.

9. The graphene photodiode (6) mentioned in Claim 1 is characterized by; having a photoconductivity gain of at least 100.10.The graphene photodiode (6) mentioned in Claim 1 is characterized by; having a photocapacitance gain of at least 10.

11. The graphene photodiode (6) mentioned in Claim 1 is characterized by; having photoconductivity and photocapacitance modes with photons generated at wavelengths of 364, 405, 495 and 560 nm.12.The graphene photodiode (6) mentioned in Claim 1 is characterized by; being a diode rectification ratio and barrier height controlled by the amount of nitrogen doping.The pn junction mentioned in Claim 1 is characterized by; being a junction formed when graphene oxide (GO) combined with heat-treated reduced graphene oxide (RGO) without any doping.The p-type rare earth elements mentioned in Claim 1 are characterized by; containing at least one of the semiconductors samarium oxide and terbium oxide.The n-type rare earth elements mentioned in Claim 1 are characterized by; containing at least one of the semiconductors cerium oxide and europium oxide.

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