Impedence Networks TRIZ Cases

A low-modulus protective member elastically deforms to disperse pressure from mold resin, preventing damage to thin recessed portions of the component cover.

A high-frequency module stacks demultiplexer chips vertically to minimize parasitic capacitance between adjacent components.

Composite substrate for surface acoustic wave devices features an uneven interface structure between the piezoelectric crystal and support layer.

Directional laser reforming regions with varying depths reduce chipping and cracking during acoustic wave device substrate cutting.

Etched air cavities isolate transmitter and receiver filters, preventing heat and noise interference in compact system-on-chip structures.

Repositioning through-holes within the minimum rectangular region of the IDT electrode reduces device size while maintaining excitation efficiency.

A module device uses a floating bump on a filter chip to connect signal wires, enabling flexible layout within the mount region.

Replacing discrete inductors with acoustic wave resonators improves reproducibility and reduces physical space for high frequency signal filtering.

A 3D island integration method transfers resonator circuits to an RF wafer using epitaxial deposition.

A vibrating reed design with specific base flexion and arm width ratios minimizes thermoelastic losses to improve the Q-value.

An acoustic wave device uses asymmetric edge distances and inclined Z-axis orientation to minimize thermal stress in the piezoelectric layer.

Integrating bulk acoustic wave filters with CMOS devices via a single crystalline beam reduces fabrication complexity while maintaining manufacturing precision.

A piezoelectric motor uses phase-shifted periodic voltages to drive friction elements with minimal energy consumption.

Trapezoidal pole pieces concentrate magnetic flux on a MEMS resonator, boosting femto-Tesla sensitivity while enabling wafer-level processing.

Segmented ground planes in a monolithic duplexer prevent electromagnetic interference, maintaining high isolation between filters during miniaturization.

Segmented thick-walled portions with slits mitigate stress to improve frequency stability and impact resistance.

Back surface wiring connects stacked components in a high-frequency module, eliminating space-consuming plated-through holes and reducing device size.

Integrates piezoelectric layers between existing metal lines to resolve compatibility issues and minimize interconnect parasitics in monolithic devices.

Varying electrode widths suppress passband ripple and sidebands, resolving the trade-off between fabrication simplicity and wide bandwidth operation.

Redistributes input output terminals outwardly via a connection member to enable direct mainboard mounting.

Acoustic resonators use aluminum scandium nitride piezoelectric layers to stabilize electromechanical coupling.

Series-connects acoustic notch filters with MEMS cavities to improve out-of-band rejection while maintaining high power handling.

A heat dissipating member with higher thermal conductivity than the cover member protects wiring electrodes from laser-induced damage during via hole formation.

A piezoelectric vibration element integrates a thick section with slits to manage residual stress distribution across the substrate.

Step parts on vibrating arm side surfaces increase electrode area and electric field efficiency.

A hierarchy of nanometer-scale electromechanical resonators transfers mechanical characteristics to amplify signals within a single integrated structure.

Insulated support structures reduce heat conduction to the mounting substrate, preventing frequency instability during component adjustment.

Lower machinery quality factor outer electrodes consume leaked vibration energy to attenuate reflected waves and improve resonator reliability.

Vertical stacking of dual-surface acoustic wave chips with insulating films reduces footprint while maintaining electrode stability.

Langasite resonators vibrate in thickness-shear mode to measure temperature and pressure beyond quartz limits.

Asymmetric transducers break time reversal symmetry to achieve non-reciprocal transmission, eliminating self-interference in full-duplex wireless systems.

Scandium-doped aluminum nitride thin films boost piezoelectric response while maintaining elastic wave propagation speed.

Segmented trimming cleans contaminants and trims electrodes to stabilize frequency without disconnecting extended leads.

A parallel resistive component integrates with wire-bond transmission line electrodes to form a monolithic RC circuit structure.

An aluminum alloy interdigital transducer electrode minimizes the S4 distortion component to reduce signal non-linearity and maintain reception sensitivity.

Electron irradiation forms vacancy-oxygen complexes that suppress thermal donor formation and stabilize substrate resistivity.

An intermediary insulating layer replaces resistive contacts with capacitive coupling, eliminating energy loss due to contact resistance in nanotube RF filters.

Manufacturing crystals with consistent acceleration sensitivity vectors enables anti-parallel alignment that cancels frequency shifts from vibrational forces.

Segmented piezoelectric thin film resonator uses a peripheral insertion film to reflect acoustic waves, reducing energy leakage and improving Q-value.

A piezoelectric substrate with a silicon oxide film structure confines acoustic waves in the overlap region.

A semiconductor-based circulator uses sequentially switched bulk acoustic wave delay lines to route transmit and receive signals over a single antenna port.

Ground terminals and wiring patterns on ceramic substrate castellations discharge radiation noise to maintain operational reliability during miniaturization.

Merges amplifiers, switches, and acoustic wave resonators onto one die to reduce form-factor while managing thermal challenges through spatial segmentation.

A resin sheet with controlled probe tack prevents shifting in vacuum containers while maintaining low thermal expansion.

Air gaps between stacked substrates eliminate interlayer thermal stress, preserving acoustic wave device reliability.

Varying gap spacing in a piezoelectric resonator reduces Rayleigh wave scattering, improving the Q value while maintaining stopband suppression.

A surface acoustic wave device uses a barrier layer between the piezoelectric substrate and main electrode to block metal migration.

Auxiliary support portions position the piezoelectric vibration piece to reduce stress concentrations under high centrifugal acceleration.