Solid-State Devices TRIZ Cases

Variable-size device level cells dissipate heat from hotspot regions, reducing overheating in densely packed integrated devices.

Bent first insulation pattern sidewalls allow complete source gas filling in the gate selection line gap, eliminating defects from incomplete filling.

Light condensers and separating units reduce energy loss during color separation, enhancing sensitivity and resolution in high-density pixel arrays.

Segmented field plate electrodes reduce leakage current by preventing parasitic MOS transistor activation across connection transistors.

Alternating inorganic and organic thin films feature interlocking protrusion structures that enhance bite force and film tightness.

Inverting the OLED structure places the transparent anode on the second substrate, allowing metal cathodes like calcium or aluminum without blocking light.

An insertion element placed between the finger electrode and semiconductor layer redirects emitted light to enhance luminous efficacy.

A segmented passivation layer structure enables controlled etching profiles in thin-film transistor fabrication processes.

Segmented support film with bending pattern holes reduces rigidity to enable narrow bezel designs while maintaining structural integrity.

Extended substrate shape creates additional routing dimension for lead wires, preventing short circuits and wire breaks in narrow frames.

Interlaced plasmonic electrodes concentrate optical pump signals within submicron gaps to accelerate carrier transit in terahertz photoconductive switches.

Graded organic layers suppress leak current between adjacent elements, preventing unintended light emission and narrowing color gamut.

Reflective layers and conductive shields protect transistors from adjacent subpixel light, resolving color shift and maintaining viewing angle characteristics.

Segmented sealing layers and an elastic molding portion constrain injection flow, suppressing material waste while blocking moisture and oxygen permeation.

Liquid opaque glue solidifies between light elements to form a blocking structure.

A thermal transfer film uses an outermost layer with a specific elastic modulus ratio to the base film.

Integrating touch electrodes on the micro LED side merges display and sensing layers, reducing device thickness while maintaining functionality.

A display device uses an optical compensation layer to maintain consistent color levels across varying viewing angles.

Segmented nanostructures resolve the contradiction between light emission efficiency and manufacturing precision by maintaining uniform capping layer height.

Specific compounds in the light emitting layer reduce driving voltage while extending device lifetime.

A bottom-gate thin film transistor connects its channel region to the gate electrode via a dedicated contact structure.

A three-terminal MOS variable capacitor decouples AC and DC signals to eliminate distortion while maintaining high capacitance density.

Dielectric spacers shield chalcogenide sidewalls from dry and wet chemical degradation during phase change memory etching.

Double diffused drain structures suppress leakage currents and prevent soft programming by controlling channel voltage in NAND flash memory.

Staggered U-shaped TFTs boost aperture ratio and enable dot inversion effects, reducing power consumption in column inversion mode.

Multiplexed dual-purpose interconnects reduce external pin requirements and routing complexity while enabling full internal IC testing.

Recess etching creates fin portions on pedestal insulators to position doped material closer to the channel, resolving poor diffusion from distant epitaxy.

Reference arrays provide threshold voltage data that the memory controller uses to compensate drift in reversible resistance-switching memory cells.

A low temperature viscosity transition inorganic material seals organic emission units via a healing process.

A stepped second electrode reflects oblique light toward the emission area to increase extraction efficiency.

An integrated test unit consolidates test block and line patterns in different layers of an array substrate.

A wireless IC device integrates an electromagnetic coupling module with a conductive article package to function as an antenna radiator.

Segmented diode structures in a bi-directional ESD device reduce inter-modulation distortions at high frequencies.

Segmentation of the control node area reduces power consumption while maintaining measurement precision through shunt-based current estimation.

A light emitting device uses segmented sub-electrode layers to control pixel emission with fewer current sources.

Lyophobic side coatings prevent solution climbing on trapezoidal resin structures, ensuring uniform film formation for stable OLED luminance.

Laminating a solar panel with a transparent display reduces energy consumption by generating electricity from sunlight.

Applying controlled voltage to the pinning layer stabilizes surface pinning and reduces dark current caused by non-uniform potentials between pixels.

Replacing mechanical force elements with capacitive electrodes and a thickness modification member reduces device thickness while maintaining touch accuracy.

A single patterning process forms active layers, sources, drains, data lines, and pixel electrodes simultaneously on an array substrate.

A photomask generates surface plasmonic polaritons to suppress transverse magnetic waves while transmitting transverse electric waves.

Epitaxial growth merges exposed fin portions into defect-free source-drain regions, reducing leakage currents caused by stacking faults.

Auxiliary light-emitting devices illuminate a texture identification layer during screen-off states to capture fingerprint data without occupying display area.

Carbon-containing tungsten films act as stress-decoupling layers to reduce compressive stress and prevent wafer warp during high-aspect-ratio etching.

Segmented source drains with separate contact openings resolve the contradiction between shrinking device footprint and difficult contact formation.

Thick epitaxial GaN LED stacks eliminate fragile transfer substrates, improving thermal conductivity and light extraction.

Pattern organic light emitting blocks with varying densities to generate gray-scale images, eliminating complex thin film transistor driving circuits.

A source deposition unit deposits mixed host and dopant materials to form a single emission layer in organic light emitting displays.

Segmented vertical electrodes support photoelectric converters while stepwise light-blocking films suppress parasitic light sensitivity.