Plasma chemical vapor deposition machine abnormality monitoring method and system
A technology of chemical vapor deposition and abnormal monitoring, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of chip clipping, chip damage, chip drop, etc., and achieve the effect of preventing chip damage
Active Publication Date: 2015-08-19
CSMC TECH FAB2 CO LTD
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Problems solved by technology
When the mechanical arm failure or transmission system abnormalities such as transmission failures cause the wafer to fall on the movable gate valve, the wafer will be pinched by the closing action of the gate valve, resulting in damage to the wafer.
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[0026] In order to solve the problem that when the wafer falls on the movable gate valve due to abnormalities such as mechanical arm failure or transmission coordination error, the wafer will be pinched and broken by the closing action of the gate valve, resulting in wafer damage. An effective method for preventing wafer damage is proposed. A method for monitoring abnormality of a plasma chemical vapor deposition machine.
[0027] see figure 1 The plasma chemical vapor deposition machine includes a loading chamber 10 and a transfer chamber 20. Taking the loading chamber 10 and the transfer chamber 20 as an example, the transfer chamber 20 is in a vacuum state, and the loading chamber 10 and the transfer chamber 20 are separated by a movable gate valve 30. open. In daily production, wafers are placed into the load chamber 10 . After loading, the loading chamber 10 is evacuated to vacuum, the movable gate valve 30 is opened, and the mechanical arm 22 in the transfer chamber 20...
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The invention provides a monitoring method for abnormity of a plasma chemical vapor deposition machine. The method comprises the following steps: monitoring a movable gate valve between cavities; acquiring information about falling of a wafer onto the opening of the movable gate valve; and giving out a control instruction to suspend closing of the movable gate valve. According to the monitoring method for abnormity of the plasma chemical vapor deposition machine, the movable gate valve between the cavities is monitored, and whether the wafer falls onto the opening of the movable gate valve is monitored in real time; once falling of the wafer occurs, a control instruction is given to suspend closing of the movable gate valve, thereby effectively preventing damage of the wafer caused by abnormity of a transfer system between the cavities in the plasma chemical vapor deposition machine. Meanwhile, the invention further provides a monitoring system for abnormity of the plasma chemical vapor deposition machine.
Description
technical field [0001] The invention relates to semiconductor technology, in particular to a method and system for monitoring the abnormality of a plasma chemical vapor deposition machine. Background technique [0002] Plasma chemical vapor deposition is a technology that ionizes the gas containing the constituent atoms of the film by means of microwave or radio frequency to form plasma locally, and the plasma is chemically active and easy to react, thereby depositing the desired film on the substrate. In order to enable the chemical reaction to proceed at a lower temperature, the activity of the plasma is used to promote the reaction. [0003] The ion chemical vapor deposition process needs to be carried out in a high vacuum environment, and the wafer reacts in a closed chamber. Different cavities are separated by movable gate valves, and wafers are transferred by robotic arms. When the transfer system abnormality such as mechanical arm failure or transfer coordination er...
Claims
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IPC IPC(8): C23C16/50C23C16/52
Inventor 吴浩
Owner CSMC TECH FAB2 CO LTD