Photoresist pattern forming method
By using a specific photoresist composition containing resin, acid-generating agent and photodegradable alkali, the amount of solvent in the film is controlled, solving the problems of high resolution and pattern shape in photolithography, and achieving good shape and improved edge roughness of photoresist patterns.
CN112946999BActive Publication Date: 2025-12-23TOKYO OHKA KOGYO CO LTD
3 Cites 0 Cited by
Patent Information
- Application Number
- CN202011423854.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2019-12-10
- Filing Date
- 2020-12-08
- Publication Date
- 2025-12-23
- Estimated Expiration
- 2040-12-08
AI Technical Summary
Technical Problem
Existing technologies struggle to form well-shaped photoresist patterns while maintaining high resolution in photolithography, especially due to issues such as increased line edge roughness and reduced pattern shape during miniaturization.
Method used
A specific photoresist composition is used, comprising a resin whose solubility in the developer changes due to acid action, an acid-generating agent that generates acid through exposure, a photodegradable alkali, and a solvent. The solvent content in the film is controlled to be above 910 ppm, and a photoresist pattern is formed through exposure and development.
Benefits of technology
While maintaining high resolution, a well-shaped photoresist pattern is formed, improving the line edge roughness and pattern shape of the film.
✦ Generated by Eureka AI based on patent content.
Abstract
A method for forming a photoresist pattern includes: (i) a step of forming a photoresist film on a support using a photoresist composition; (ii) a step of exposing the photoresist film; and (iii) a step of developing the exposed photoresist film to form a photoresist pattern, characterized in that the photoresist composition contains: a resin (A) whose solubility in the developer changes due to the action of an acid, an acid-generating agent (B) that generates acid upon exposure, a photodegradable alkali (D1), a solvent (S), and a compound (X) represented by the following formula (x-1), wherein the amount of solvent remaining in the photoresist film formed in step (i) is 910 ppm or more, wherein R 1 ~R 4 It is a hydroxyl group or an alkyl group having 1 to 5 carbon atoms, R 5 and R 6 It is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 10 carbon atoms obtained by substitution with a hydroxyl group.
Need to check novelty before this filing date? Find Prior Art