Method for correcting target layout and method for forming mask layout

Abstract

A method for correcting a target layout, a method for forming a mask layout and a mask thereof, the correction method comprising: providing an initial target layout, the initial target layout comprising a plurality of initial graphics; performing simulated exposure on the initial target layout to obtain a simulated exposure layout, the simulated exposure layout having a plurality of simulated exposure graphics corresponding to the initial graphics, the simulated exposure layout comprising a plurality of correction areas arranged along a first direction; obtaining a target graphic in a simulated exposure graphic of at least one of the correction areas; obtaining a correction rule for the correction area corresponding to the target graphic; and correcting the target graphic according to the correction rule to obtain a corrected graphic. The mask layout obtained by the correction method has a good correction effect and high precision.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a method for correcting a target layout and a method for forming a mask layout. Background Art

[0002] Photolithography is a crucial technology in semiconductor manufacturing technology. It can transfer patterns from the mask to the surface of the silicon wafer to form semiconductor products that meet the design requirements. In the photolithography process, first, through the exposure step, light passes through the light-transmitting or light-reflecting area in the mask to the silicon wafer coated with photoresist, and a photochemical reaction occurs with the photoresist; then, through the development step, the degree of solubility of the photosensitive and non-photosensitive photoresists in the developer is used to form a photolithography pattern to achieve the transfer of the mask pattern; then, through the etching step, the silicon wafer is etched based on the photolithography pattern formed by the photoresist layer, and the mask pattern is further transferred to the silicon wafer.

[0003] In advanced photolithography, extreme ultraviolet (EUV) light can be used as a light source. However, there are still many problems with the mask produced by the photolithography process using EUV light as a light source. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a method for correcting a target layout and a method for forming a mask layout, so as to improve the accuracy of the mask.

[0005] In order to solve the above technical problems, the technical solution of the present invention provides a method for correcting a target layout, comprising: providing an initial target layout, the initial target layout comprising a plurality of initial graphics; performing simulated exposure on the initial target layout to obtain a simulated exposure layout, the simulated exposure layout having a plurality of simulated exposure graphics corresponding to the initial graphics, the simulated exposure layout comprising a plurality of correction areas arranged along a first direction; obtaining a target graphic in the simulated exposure graphics of at least one of the correction areas; obtaining a correction rule for the correction area corresponding to the target graphic; and correcting the target graphic according to the correction rule to obtain a corrected graphic.

[0006] Optionally, the method for obtaining the target pattern includes: obtaining an edge placement error of each simulated exposure pattern in the correction area relative to a corresponding initial pattern; and obtaining the target pattern, wherein the target pattern is the simulated exposure pattern when the edge placement error in the correction area is greater than a first preset value.

[0007] Optionally, the initial target layout includes a plurality of areas to be corrected arranged along a first direction.

[0008] Optionally, each area to be corrected has a corresponding exposure model; the method for obtaining a simulated exposure layout includes: performing simulated exposure on each area to be corrected using the corresponding exposure model to obtain a correction area corresponding to each area to be corrected; and replacing the corresponding area to be corrected with the correction area to form a simulated exposure layout.

[0009] Optionally, each correction area has a corresponding correction rule; the method for obtaining the correction rule of the correction area corresponding to the target graphic includes: obtaining the target correction area, the target correction area is the correction area where the target graphic is located; obtaining the correction rule corresponding to the target correction area.

[0010] Optionally, the correction rule corresponding to each correction area includes a segmentation rule and an offset rule; the segmentation rule includes segmenting the outline of the target figure into a preset number of line segments, and each line segment has a preset length; the offset rule includes offsetting each line segment by a preset offset.

[0011] Optionally, the method for correcting the target graphic includes: dividing the outline of the target graphic into a preset number of line segments; obtaining a line segment to be corrected from the several line segments, the corrected line segment being a line segment when the edge placement error is greater than a first preset value; offsetting the line segment to be corrected by the preset offset to obtain a corrected line segment; replacing the corresponding line segment to be corrected with the corrected line segment to form the second corrected graphic.

[0012] An embodiment of the present invention also provides a method for forming a mask layout, comprising: providing a target layout; performing optical proximity correction on the target layout using a target layout correction method to form a mask layout, wherein the target layout correction method comprises: providing an initial target layout, wherein the initial target layout comprises a plurality of initial graphics; performing simulated exposure on the initial target layout to obtain a simulated exposure layout, wherein the simulated exposure layout has a plurality of simulated exposure graphics corresponding to the initial graphics, and the simulated exposure layout comprises a plurality of correction areas arranged along a first direction; obtaining a target graphic in a simulated exposure graphic of at least one of the correction areas; obtaining a correction rule for the correction area corresponding to the target graphic; and correcting the target graphic according to the correction rule to obtain a corrected graphic.

[0013] Optionally, the method for obtaining the target pattern includes: obtaining an edge placement error of each simulated exposure pattern in the correction area relative to a corresponding initial pattern; and obtaining the target pattern, wherein the target pattern is the simulated exposure pattern when the edge placement error in the correction area is greater than a first preset value.

[0014] Optionally, the initial target layout includes a plurality of areas to be corrected arranged along a first direction.

[0015] Optionally, each area to be corrected has a corresponding exposure model; the method for obtaining a simulated exposure layout includes: performing simulated exposure on each area to be corrected using the corresponding exposure model to obtain a correction area corresponding to each area to be corrected; and replacing the corresponding area to be corrected with the correction area to form a simulated exposure layout.

[0016] Optionally, each correction area has a corresponding correction rule; the method for obtaining the correction rule of the correction area corresponding to the target graphic includes: obtaining the target correction area, the target correction area is the correction area where the target graphic is located; obtaining the correction rule corresponding to the target correction area.

[0017] Optionally, the correction rule corresponding to each correction area includes a segmentation rule and an offset rule; the segmentation rule includes segmenting the outline of the target figure into a preset number of line segments, and each line segment has a preset length; the offset rule includes offsetting each line segment by a preset offset.

[0018] Optionally, the method for correcting the target graphic includes: dividing the outline of the target graphic into a preset number of line segments; obtaining a line segment to be corrected from the several line segments, the corrected line segment being a line segment when the edge placement error is greater than a first preset value; offsetting the line segment to be corrected by the preset offset to obtain a corrected line segment; replacing the corresponding line segment to be corrected with the corrected line segment to form the second corrected graphic.

[0019] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0020] The target layout correction method in the technical solution of the present invention obtains the target pattern in the simulated exposure pattern of at least one correction area, obtains the correction rule of the correction area corresponding to the target pattern, and then corrects the target pattern according to the correction rule to obtain the corrected pattern, and finally obtains the target layout. In the correction method, each correction area has a corresponding correction rule, so that when the target pattern is corrected, the correction effect is more accurate, and the scanning slit effect of the EUV lithography technology is avoided, which causes fluctuations in the correction effect, thereby saving calculation amount and improving work efficiency.

[0021] Furthermore, each area to be corrected has a corresponding exposure model, and the exposure model can perform separate simulated exposure on different areas to be corrected, so that the exposure effect of the initial graphics of the different areas to be corrected is better and closer to the actual exposure, so that the formed simulated exposure graphics can be accurately corrected, so that the correction effect is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic diagram of the steps of a method for correcting a target layout in an embodiment of the present invention;

[0023] Figures 2 to 7 is a structural schematic diagram of a target layout correction process in an embodiment of the present invention;

[0024] Figure 8 Schematic diagram of a mask layout in an embodiment of the present invention. DETAILED DESCRIPTION

[0025] As described in the background technology, there are still many problems with the masks formed by the existing extreme ultraviolet (EUV) exposure technology. Specifically, the extreme ultraviolet (EUV) exposure process is usually carried out in a scanning manner. In the extreme ultraviolet (EUV) exposure system, a slit that limits the light to a local area of ​​the mask can be used to perform scanning, thereby transferring the pattern on the mask to the substrate. The slit has a curved structure, and the curved structure enables the extreme ultraviolet (EUV) reflected light to achieve uniform illumination distribution on the surface of the mask. Because the slit has a curved structure, the azimuth angle of the extreme ultraviolet light passing through different positions of the slit is different. Therefore, when the extreme ultraviolet light passes through the slit to irradiate the mask, and then is reflected by the mask to the surface of the substrate, the same design pattern on the mask has different sizes after being formed on the substrate, that is, there is a scanning slit effect.

[0026] In order to overcome the scanning slit effect, the mask pattern is divided into multiple areas, and different exposure models are established in each area to overcome the scanning slit effect caused by the slit.

[0027] However, in the existing OPC correction process, after the simulated exposure pattern is obtained after the simulated exposure pattern is simulated, when the optical proximity correction is performed on the simulated exposure pattern, the azimuth angle parameter of the extreme ultraviolet light related to the slit in the optical proximity correction model is fixed, so when the optical proximity correction model is used to correct each area of ​​the mask pattern, the correction result obtained has a large deviation, and the optical proximity correction model is not suitable for the correction of all mask patterns. As a result, the correction effect is not good, and the mask pattern of each area cannot be accurately corrected, and the mask pattern obtained after correction, the mask pattern is transferred to the mask, and then the pattern formed on the wafer by the mask has a large deviation, so that the size uniformity of the formed device is poor.

[0028] In order to solve the above problems, the technical solution of the present invention provides a method for correcting a target layout and a method for forming a mask layout, which obtains a target pattern in a simulated exposure pattern of at least one correction area, obtains a correction rule of the correction area corresponding to the target pattern, and then corrects the target pattern according to the correction rule to obtain a corrected pattern, and finally obtains a mask layout. In the correction method, the correction area has a corresponding correction rule, so that when the target pattern is corrected, the correction effect is more accurate, and the scanning slit effect of the EUV lithography technology is avoided, which causes fluctuations in the correction effect, thereby saving calculations and improving work efficiency.

[0029] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0030] Figure 1 It is a schematic diagram of the steps of a method for correcting a target layout in an embodiment of the present invention.

[0031] Please refer to Figure 1 , the method for correcting the target layout includes:

[0032] S1: providing an initial target layout, wherein the initial target layout includes a plurality of initial graphics;

[0033] S2: performing simulated exposure on the initial target layout to obtain a simulated exposure layout, wherein the simulated exposure layout has a plurality of simulated exposure patterns corresponding to the initial patterns, and the simulated exposure layout includes a plurality of correction areas arranged along a first direction;

[0034] S3: Acquire a target pattern in the simulated exposure pattern of at least one correction area;

[0035] S4: Obtaining a correction rule for the correction area corresponding to the target graphic;

[0036] S5: Correct the target graph according to the correction rule to obtain a corrected graph.

[0037] In the correction method, the correction area has a corresponding correction rule, so that when the target pattern is corrected, the correction effect is more accurate, and the scanning slit effect of the EUV lithography technology is avoided so as to avoid fluctuations in the correction effect.

[0038] Figures 2 to 7 It is a structural schematic diagram of the target layout correction process in an embodiment of the present invention.

[0039] Please refer to Figure 2 , providing an initial target layout 100 , wherein the initial target layout 100 includes a plurality of initial graphics 101 .

[0040] The initial target layout 100 is an initial design pattern. The initial target layout 100 is modified to obtain a target layout, and the target layout is a pattern subsequently made on a mask.

[0041] The initial target layout 100 includes a plurality of areas to be corrected arranged along a first direction X.

[0042] In this embodiment, the initial target layout 100 includes a first area to be corrected A1, a second area to be corrected A2 and a third area to be corrected A3 arranged along a first direction X.

[0043] In other embodiments, the initial target layout includes N areas to be corrected arranged along the first direction X, where N is a natural number greater than 1.

[0044] The initial target layout 100 includes a plurality of areas to be corrected arranged along a first direction X, and the plurality of areas to be corrected are used to set a corresponding exposure model in each area to be corrected to overcome the scanning slit effect caused by the slit position, so that the exposure effect of the initial graphics of the different areas to be corrected is better and closer to the exposure of the actual situation, so that the simulated exposure graphics can be accurately corrected, so that the correction effect is better.

[0045] Please refer to Figure 3 , execute step S2, perform simulated exposure on the initial target layout 100 to obtain a simulated exposure layout 200, wherein the simulated exposure layout 200 has a plurality of simulated exposure graphics 201 corresponding to the initial graphics 101, and the simulated exposure layout 200 includes a plurality of correction areas arranged along the first direction X.

[0046] In this embodiment, each area to be corrected has a corresponding exposure model.

[0047] Affected by the scanning slit effect in the extreme ultraviolet (EUV) exposure process, each area to be corrected has a corresponding exposure model, and the exposure model can perform separate simulated exposure on different areas to be corrected, so that the exposure effect of the initial graphics of the different areas to be corrected is better and closer to the actual exposure, so that the formed simulated exposure graphics can be accurately corrected, so that the correction effect is better.

[0048] In other embodiments, the plurality of areas to be corrected are subjected to simulated exposure using one or more exposure models to form corresponding correction areas, and the number of the plurality of exposure models is less than the number of the areas to be corrected.

[0049] The method for obtaining the simulated exposure layout 200 includes: performing simulated exposure on each area to be corrected using a corresponding exposure model to obtain a correction area corresponding to each area to be corrected; and replacing the corresponding area to be corrected with the correction area to form the simulated exposure layout 200.

[0050] In this embodiment, the simulated exposure layout 200 includes a first correction area B1, a second correction area B2 and a third correction area B3 arranged along a first direction X, and the first correction area B1, the second correction area B2 and the third correction area B3 correspond to the first to-be-corrected area A1, the second to-be-corrected area A2 and the third to-be-corrected area A3 of the initial target layout.

[0051] In other embodiments, the simulated exposure layout includes N correction areas arranged along the first direction X and corresponding to the to-be-corrected areas.

[0052] Please refer to Figure 4 After obtaining the simulated exposure pattern 200, a target pattern is obtained in the simulated exposure pattern 201 of at least one correction area.

[0053] In this embodiment, the target graphics include a first target graphic 202, a second target graphic 203 and a third target graphic 204, the first target graphic 202 is a simulated exposure graphic in the first correction area B1, the second target graphic 203 is a simulated exposure graphic in the second correction area B2, and the third target graphic 204 is a simulated exposure graphic in the third correction area B3.

[0054] In other embodiments, the target pattern is one or more simulated exposure patterns in one or more correction areas.

[0055] In this embodiment, the method for obtaining the target pattern includes: obtaining the edge placement error of each simulated exposure pattern 201 in the correction area relative to the corresponding initial pattern 101; obtaining the target pattern, which is the simulated exposure pattern 201 when the edge placement error in the correction area is greater than a first preset value.

[0056] The first preset value is set according to the actual process node or precision requirement.

[0057] For the mask pattern formed by the simulated exposure pattern 201 whose edge placement error is less than the first preset value, the pattern exposed on the wafer after the mask is subsequently formed meets the accuracy requirements and does not need to be corrected again; for the mask pattern formed by the simulated exposure pattern 201 whose edge placement error is greater than the first preset value, the pattern deviation after the mask is subsequently formed on the wafer after exposure is large, and thus needs to be corrected again to obtain a target pattern with higher accuracy.

[0058] It should be noted that the edge placement error refers to the error between the simulated lithography pattern and the target lithography pattern in the optical proximity correction method, and the edge placement error is an indicator used to measure the quality of optical proximity correction.

[0059] In other embodiments, the simulated exposure pattern can be judged and detected according to other rules to obtain a target pattern.

[0060] Please refer to Figure 5 After obtaining the target graphic, a correction rule of the correction area corresponding to the target graphic is obtained.

[0061] In this embodiment, each correction area has a corresponding correction rule. The correction rule includes a segmentation rule and an offset rule; the segmentation rule includes segmenting the outline of the target figure into a preset number of line segments, and each line segment has a preset length; the offset rule includes offsetting each line segment by a preset offset.

[0062] The method for obtaining the correction rule of the correction area corresponding to the target graphic includes: obtaining the target correction area, where the target correction area is the correction area where the target graphic is located; and obtaining the correction rule corresponding to the target correction area.

[0063] In this embodiment, the first target pattern 202 corresponds to the first correction rule R1 of the first correction area B1, the second target pattern 203 corresponds to the second correction rule R2 of the second correction area B2, and the third target pattern 204 corresponds to the third correction rule R3 of the third correction area B3.

[0064] Each correction area has a corresponding correction rule, so that when the target pattern is corrected, the correction effect is more accurate, and the scanning slit effect of the EUV lithography technology is avoided so as to avoid fluctuations in the correction effect.

[0065] In this embodiment, the first correction rule R1, the second correction rule R2 and the third correction rule R3 can be automatically adjusted according to actual conditions during the correction process.

[0066] In other embodiments, the first correction rule, the second correction rule and the third correction rule may be preset.

[0067] After obtaining the correction rule of the correction area corresponding to the target graphic, the target graphic is corrected according to the correction rule to obtain a corrected graphic. For the process of obtaining a corrected graphic, please refer to Figure 6 and Figure 7 .

[0068] Please refer to Figure 6 , dividing the outline of the target figure into a preset number of line segments; obtaining a line segment to be corrected from the line segments, the corrected line segment being a line segment when the edge placement error is greater than a first preset value.

[0069] In this embodiment, a first line segment M1 to be corrected is obtained from the contour of the first target figure 202, a second line segment M2 to be corrected is obtained from the contour of the second target figure 203, and a third line segment M3 to be corrected is obtained from the contour of the third target figure 204. The lengths of the first line segment M1 to be corrected, the second line segment M2 to be corrected, and the third line segment M3 to be corrected are different.

[0070] In other embodiments, the lengths of the first line segment to be corrected, the second line segment to be corrected, and the third line segment to be corrected may be partially or completely the same.

[0071] In other embodiments, the outlines of target graphics in other areas can be segmented into line segments of other preset lengths.

[0072] The outline of the target figure is divided into a preset number of line segments, each of which has a preset length, and the rule for dividing the line segments corresponds to each correction area. Therefore, after the line segments to be corrected are obtained, when the line segments to be corrected are offset, the correction effect is more accurate, thereby saving calculation amount and improving work efficiency.

[0073] Please refer to Figure 7 , offset the line segment to be corrected by the preset offset to obtain a corrected line segment; and replace the corresponding line segment to be corrected with the corrected line segment to form the corrected graph.

[0074] In this embodiment, the first line segment M1 to be corrected is offset by a first preset offset to obtain a first correction line segment N1, and the first correction line segment N1 replaces the corresponding first line segment M1 to be corrected to form the first correction figure 302; the second line segment M2 to be corrected is offset by a second preset offset to obtain a second correction line segment N2, and the second correction line segment N2 replaces the corresponding second line segment M2 to be corrected to form the second correction figure 303; the third line segment M3 to be corrected is offset by a third preset offset to obtain a third correction line segment N3, and the third correction line segment N3 replaces the corresponding third line segment M3 to be corrected to form the third correction figure 304.

[0075] In this embodiment, the first preset offset, the second preset offset and the third preset offset are different.

[0076] In other embodiments, the first preset offset, the second preset offset, and the third preset offset may be partially or completely the same.

[0077] In other embodiments, the line segments to be corrected of the target graphics in other areas can be offset by other preset offsets.

[0078] The preset offset is a range in which the edge placement error of the correction pattern formed after simulating the exposure of the correction pattern satisfies the first preset value, and is set in the corresponding correction rules of each correction area.

[0079] The preset offsets corresponding to the various correction areas are different. The line segment to be corrected is corrected by performing one or more offset corrections under the correction rule, so that the correction effect is more accurate, and the scanning slit effect of the EUV lithography technology is avoided, which causes fluctuations in the correction effect, thereby saving calculations and improving work efficiency.

[0080] At this point, the target layout is formed by adopting the correction method of the target layout, and each correction area has a corresponding correction rule, so that when the target pattern is corrected, the correction effect is more accurate, and the scanning slit effect of the EUV lithography technology is avoided, which causes fluctuations in the correction effect, thereby saving calculation amount and improving work efficiency.

[0081] Figure 8 Schematic diagram of a mask layout in an embodiment of the present invention.

[0082] Provide as Figure 2 The initial target layout 100 includes a plurality of initial graphics 101 , and the initial target layout 100 includes a plurality of areas to be corrected arranged along a first direction X.

[0083] Please refer to Figure 8 , optical proximity correction is performed on the initial target layout 100 to form the mask layout 300 , and the mask layout 300 includes a plurality of mask patterns 301 .

[0084] The method for performing optical proximity correction on the initial target layout 100 includes: Figure 1 The steps described:

[0085] S1: providing an initial target layout, wherein the initial target layout includes a plurality of initial graphics;

[0086] S2: performing simulated exposure on the initial target layout to obtain a simulated exposure layout, wherein the simulated exposure layout has a plurality of simulated exposure patterns corresponding to the initial patterns, and the simulated exposure layout includes a plurality of correction areas arranged along a first direction;

[0087] S3: Acquire a target pattern in the simulated exposure pattern of at least one correction area;

[0088] S4: Obtaining a correction rule for the correction area corresponding to the target graphic;

[0089] S5: Correct the target graph according to the correction rule to obtain a corrected graph.

[0090] For the modification process of the target layout, please refer to Figures 2 to 7 , I will not go into details here.

[0091] The mask pattern 300 obtained by the correction method has a better correction effect; a mask is subsequently formed according to the mask pattern 300, and the pattern formed on the wafer after exposure and development has a high accuracy, which is beneficial to improving the size uniformity of the semiconductor devices formed subsequently.

[0092] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for correcting a target layout, characterized in that: include: Providing an initial target layout, wherein the initial target layout includes a plurality of initial graphics, and the initial target layout includes a plurality of areas to be corrected arranged along a first direction; Performing simulated exposure on the initial target layout to obtain a simulated exposure layout, each area to be corrected has a corresponding exposure model, and performing simulated exposure on each area to be corrected using the corresponding exposure model, wherein the simulated exposure layout has a plurality of simulated exposure patterns corresponding to the initial pattern, and the simulated exposure layout includes a plurality of correction areas arranged along a first direction; Acquiring a target pattern in a simulated exposure pattern of at least one of the correction areas; Each correction area has a corresponding correction rule, and the correction rule of the correction area corresponding to the target figure is obtained, and the correction rule corresponding to each correction area includes a segmentation rule and an offset rule; the segmentation rule includes segmenting the outline of the target figure into a preset number of line segments, and each line segment has a preset length; the offset rule includes offsetting each line segment by a preset offset amount; The target graphic is corrected by the correction rule to obtain a corrected graphic. The method for correcting the target graphic includes: dividing the outline of the target graphic into a preset number of line segments; obtaining a line segment to be corrected from the line segments, wherein the line segment to be corrected is a line segment when the edge placement error is greater than a first preset value; offsetting the line segment to be corrected by the preset offset to obtain a corrected line segment; replacing the corresponding line segment to be corrected with the corrected line segment to form the corrected graphic.

2. The target layout correction method according to claim 1, characterized in that: The method for obtaining a target pattern comprises: obtaining an edge placement error of each simulated exposure pattern in the correction area relative to a corresponding initial pattern; and obtaining the target pattern, wherein the target pattern is the simulated exposure pattern when the edge placement error in the correction area is greater than a first preset value.

3. The target layout correction method according to claim 1, characterized in that: The method for obtaining a simulated exposure layout includes: performing simulated exposure on each area to be corrected using a corresponding exposure model to obtain a correction area corresponding to each area to be corrected; and replacing the corresponding area to be corrected with the correction area to form a simulated exposure layout.

4. The target layout correction method according to claim 1, characterized in that: The method for obtaining the correction rule of the correction area corresponding to the target graphic includes: obtaining the target correction area, where the target correction area is the correction area where the target graphic is located; and obtaining the correction rule corresponding to the target correction area.

5. A method for forming a mask pattern, characterized in that: include: Provide target layout; The target layout is corrected by optical proximity correction using a target layout correction method to form a mask layout. The target layout correction method includes: Providing an initial target layout, wherein the initial target layout includes a plurality of initial graphics, and the initial target layout includes a plurality of areas to be corrected arranged along a first direction; Performing simulated exposure on the initial target layout to obtain a simulated exposure layout, each area to be corrected has a corresponding exposure model, and performing simulated exposure on each area to be corrected using the corresponding exposure model, wherein the simulated exposure layout has a plurality of simulated exposure patterns corresponding to the initial pattern, and the simulated exposure layout includes a plurality of correction areas arranged along a first direction; Acquiring a target pattern in a simulated exposure pattern of at least one of the correction areas; Each correction area has a corresponding correction rule, and the correction rule of the correction area corresponding to the target figure is obtained, and the correction rule corresponding to each correction area includes a segmentation rule and an offset rule; the segmentation rule includes segmenting the outline of the target figure into a preset number of line segments, and each line segment has a preset length; the offset rule includes offsetting each line segment by a preset offset amount; The target graphic is corrected by the correction rule to obtain a corrected graphic. The method for correcting the target graphic includes: dividing the outline of the target graphic into a preset number of line segments; obtaining a line segment to be corrected from the line segments, wherein the line segment to be corrected is a line segment when the edge placement error is greater than a first preset value; offsetting the line segment to be corrected by the preset offset to obtain a corrected line segment; replacing the corresponding line segment to be corrected with the corrected line segment to form the corrected graphic.

6. The method for forming a mask pattern according to claim 5, wherein: The method for obtaining a target pattern comprises: obtaining an edge placement error of each simulated exposure pattern in the correction area relative to a corresponding initial pattern; and obtaining the target pattern, wherein the target pattern is the simulated exposure pattern when the edge placement error in the correction area is greater than a first preset value.

7. The method for forming a mask pattern according to claim 5, wherein: The method for obtaining a simulated exposure layout includes: performing simulated exposure on each area to be corrected using a corresponding exposure model to obtain a correction area corresponding to each area to be corrected; and replacing the corresponding area to be corrected with the correction area to form a simulated exposure layout.

8. The method for forming a mask pattern according to claim 5, wherein: The method for obtaining the correction rule of the correction area corresponding to the target graphic includes: obtaining the target correction area, where the target correction area is the correction area where the target graphic is located; and obtaining the correction rule corresponding to the target correction area.

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