A whole-board crystal fine-tuning method and system

Abstract

The present invention discloses a whole-plate crystal fine-tuning method. First, the frequency of products at all positions of the substrate to be etched is measured, and the product data is transmitted to the server via the network; then the fine-tuning machine measures the substrate to be etched, reads the No. 2 frequency information of the product at the test position of the substrate on the server, calculates the difference and writes it into the dynamic library; the fine-tuning machine adjusts the frequency according to its own measurement value and the aforementioned difference; this scheme 1. enables flexible production of the production line, and one device processes crystals of different frequencies and loads at the same time; 2. solves the problem of random deviation of the test caused by the two contacts of the probe; 3. solves the problem of systematic error of the test caused by the working environment of the fine-tuning machine; 4. There is no need to align the crystal on the fine-tuning machine, thereby improving production efficiency. The present invention also discloses a system for fine-tuning the whole-plate crystal.

Description

Technical Field

[0001] The invention relates to the field of crystal oscillator production technology, and in particular to a whole-board crystal fine-tuning method and system. Background Art

[0002] The traditional crystal oscillator production process is to first produce a whole plate of semi-finished crystals, and then randomly select a few of them as representatives from the whole plate of semi-finished crystals, compare their parameters with the element-level standard crystal (the crystal with the highest precision), determine the difference with the element-level standard crystal, and use this difference to adjust the working parameters of the fine-tuning machine. Then put the whole plate of semi-finished crystals into the fine-tuning machine for a slight etching adjustment, referred to as fine-tuning. After the fine-tuning of the fine-tuning machine is completed, a few crystals are randomly selected as representatives and compared with the element-level standard crystal again. If the difference is within the allowable error range, it is considered that the crystals on this plate meet the standards, otherwise the whole plate of crystals will be readjusted or discarded.

[0003] Since the crystal oscillator has very high requirements for manufacturing precision, in the above production process, in order to ensure the accuracy of the measuring machine used to test the crystal frequency, five standard crystals are generally made at each monitoring frequency point, and three standard crystals are randomly selected at each frequency point every day to calibrate the test machine to ensure the stability of the state of the test machine itself and to ensure that the measured values ​​are accurate. The existing technology is manual measurement and calibration in this step, which is inefficient and prone to errors. If the production specifications need to be changed, the new specifications of the standard crystals need to be used to recalibrate and adjust the test machine, fine-tuning machine and other equipment, which takes a long time. Therefore, in the traditional production method, a single production line is difficult to adapt to the situation of co-production of multiple specifications.

[0004] In addition, in the above process, when measuring the whole plate of crystals, since it is a manual measurement, a few crystals are selected as representatives by random sampling. We name these selected crystals as "representative crystals before engraving", and use the values ​​of these representative crystals before engraving to represent the state of the whole plate of crystals to adjust the fine-tuning machine. After adjustment by the fine-tuning machine, a few crystals are randomly selected for measurement again. We name these selected crystals as "representative crystals after engraving", and use the values ​​of these representative crystals after engraving as the state of the whole plate of crystals to determine whether the whole plate of crystals meets the standards. Obviously, in the above process, most of the crystals are "represented", and the data in the above production process are theoretical values ​​derived from statistical theory. The actual situation of each crystal cannot be accurately controlled. In the current increasingly fierce competition, the above production process can no longer meet the requirements of continuous improvement.

[0005] In addition, in the traditional fine-tuning process, the fine-tuning of a single crystal is often performed in two times. The first etching is coarse tuning, and the second etching is fine tuning. That is, the probe will contact the crystal twice during the entire fine-tuning process, which will also cause systematic errors in the measurement.

[0006] In summary, the traditional crystal fine-tuning process has the following disadvantages:

[0007] 1. One device can only produce products of one frequency and load at a time.

[0008] 2. Every time the production specifications and models are changed, the machine must be aligned and tested with a standard crystal.

[0009] 3. There are few samples in the product testing process, and it cannot be guaranteed that all products leaving the factory are qualified.

[0010] 4. The etcher brings systematic errors and random errors due to the working environment and working mode, which affect the measurement accuracy and consistency. The error between the actual products shipped and the standard parameters cannot be 100% within ±3ppm.

[0011] 5. It takes a long time to benchmark crystals and change numbers, and the equipment utilization rate is below 85%, which can no longer adapt to the production of multiple varieties. Summary of the invention

[0012] The technical problem to be solved by the present invention is: how to increase the number of measurements without reducing production efficiency, realize comprehensive measurement of all crystals, accurately control the real data in the production process, and how to improve the utilization rate of equipment on the production line.

[0013] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0014] A whole-board crystal fine-tuning method is based on a whole-board crystal fine-tuning system, the whole-board crystal fine-tuning system includes a fine-tuning machine, a server, and a third measuring device, the fine-tuning machine is provided with a second measuring device, and the server pre-stores standard process parameters of crystals of various specifications; each substrate has a unique identity ID, based on which the specifications of the crystal on the substrate can be determined; the fine-tuning steps are as follows:

[0015] S1, perform pre-engraving measurement to obtain the identity ID of the substrate in this sequence, use a third measuring device to measure the substrate in this sequence, obtain the position information of each crystal on the substrate in this sequence and the corresponding No. 3 frequency information, bind the position information of the crystal, the corresponding No. 3 frequency information of each crystal and the identity ID of the substrate in this sequence and upload them to the server;

[0016] S2, obtain the identity ID of the substrate in this sequence, load the substrate in this sequence into the fine-tuning machine; and upload the information of this step to the server;

[0017] S3, the fine-tuning machine reads the standard process parameters corresponding to the substrate in this order from the server according to the identity ID of the substrate in this order, wherein the standard process parameters include standard frequency information;

[0018] S4, using the second measuring device in the fine-tuning machine to measure the substrate of this sequence, and obtain the position information of the crystals on the substrate of this sequence and the No. 2 frequency information corresponding to each crystal;

[0019] S5, the fine-tuning machine reads the frequency information No. 3 corresponding to the substrate of the current sequence obtained in step S1 from the server according to the identity ID of the substrate of the current sequence, and compares and calculates it with the frequency information No. 2 obtained in step S4 to obtain the frequency difference between No. 2 and No. 3 of the crystal at the same position on the substrate of the current sequence;

[0020] S6. The fine-tuning machine performs etching fine-tuning on the crystal on the substrate of this sequence according to the frequency information No. 2, the frequency difference between No. 2 and No. 3, and the standard process parameters, until the difference between the sum of the frequency measured in real time by the second measuring device in the fine-tuning machine and the frequency difference between No. 2 and No. 3 and the standard frequency is less than the set threshold value; the real-time measured frequency of the second measuring device after fine-tuning is uploaded to the server.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] The fine-tuning amount of the fine-tuning machine is adjusted using the frequency information No. 3 measured by the third measuring device, the frequency information No. 2 initially measured by the fine-tuning machine, the real-time measured values ​​of the fine-tuning machine and the standard process parameters recorded in the server. It is no longer necessary to align the crystal on the fine-tuning machine, which improves the accuracy and discreteness of the etching frequency and solves the problem of systematic error in the testing caused by the working environment of the fine-tuning machine, thereby improving production efficiency.

[0023] After the substrate to be processed enters the fine-tuning machine, the probe will not separate after contacting the crystal until the fine-tuning is completed, which solves the problem of random deviation in testing caused by the probe's two contacts. The probe is used to complete etching in one time to ensure measurement accuracy and consistency.

[0024] On the basis of the above, the present invention can also be improved as follows:

[0025] Furthermore, for a continuous production process, when the previous order substrate is subjected to the operation of steps S2-S6, the current order substrate is subjected to the operation of step S1, thereby making full use of the waiting time of the steps S2-S6 process and greatly improving the working efficiency of the continuous processing.

[0026] Furthermore, after step S6, step S7 is also included, and the step S7 is: after step S6, step S7 is also included, and the step S7 is: performing post-engraving excitation, performing post-engraving excitation on the substrate of the present sequence after being etched and fine-tuned by the fine-tuning machine.

[0027] Furthermore, the third measuring device periodically performs frequency calibration during the production process. Specifically, the machine substrate refers to a substrate carrying a production line standard crystal. The production line standard crystal is a secondary standard crystal made based on the element-level standard crystal and used as a reference for calibrating production equipment. The element-level standard crystal is a crystal used to calibrate the standard measuring device. The clock of the first measuring device as the standard measuring device is calibrated using an external signal. The element-level standard crystal is measured by the first measuring device after the clock is calibrated. According to the measured value and the theoretical value of the element-level standard crystal, the compensation value of the first measuring device is set to ensure the accuracy of the first measuring device. The periodic calibration process of the third measuring device is as follows:

[0028] First, read the identity ID of the machine substrate, measure the machine substrate with the first measuring device after setting the compensation value, and obtain the standard load frequency of the machine substrate; bind the identity ID of the machine substrate and the measured standard load frequency and upload them to the server;

[0029] Secondly, read the identity ID of the counterpart substrate, use a third measuring device to measure the counterpart substrate, obtain the measurement load frequency that matches the third measuring device and the counterpart substrate, bind the identity information of the third measuring device, the identity ID of the counterpart substrate and the corresponding measurement load frequency, and upload them to the server;

[0030] Finally, the server calculates the difference between the standard load frequency and the measured load frequency of the crystal at the same position on the substrate of the counterpart, sets the compensation value of the third measuring device of this block, and completes the calibration of the third measuring device;

[0031] During the production process, the machine substrate is continuously measured between the first measuring device and the third measuring device in a cycle, so as to realize the periodic calibration of the third measuring device.

[0032] The beneficial effect of adopting the above further scheme is that based on the whole board testing method, with the help of the server to store the data of the machine substrate, continuous calibration of the third measuring device is achieved. Since the basic data used for calibration is all the crystals on the entire machine substrate, the data volume is large and the calibration effect is better.

[0033] Furthermore, after every set time or after the third measuring device has measured a set number of substrates to be etched, the third measuring device is calibrated using the first measuring device and the machine substrate. If the newly measured value of the crystal at less than 5% of the positions in the same test channel in the third measuring device or the first measuring device differs from the last measured value by more than 1.5ppm, it is determined that the crystal test contact is poor; if the crystal frequency measurement value at more than 20% of the positions in the same test channel differs from the last frequency measurement value by more than 1.5ppm, it is determined that the third measuring device or the first measuring device is faulty.

[0034] The beneficial effect of adopting the above further solution is to calibrate the third measuring device by cyclically calibrating the machine substrate, and to promptly discover possible failures of the third measuring device to avoid affecting the quality control results of the product.

[0035] Furthermore, data exchange between the first measuring device, the test board and the server is achieved through network transmission.

[0036] Furthermore, before the fine-tuning machine performs the first measurement on the substrate of this sequence, a process of pre-engraving excitation on the substrate of this sequence is also included.

[0037] The beneficial effect of adopting the above further solution is that the substrate is stimulated before engraving, which can make the crystal on the substrate closer to the use state and avoid measurement errors caused by minor cold solder joints.

[0038] A system for fine-tuning a whole-board crystal, characterized by comprising a unit-level crystal calibration, a machine substrate, a fine-tuning machine, a first measuring device, a third measuring device, and a server;

[0039] The element-level standard crystal is a standard crystal used to calibrate the first measuring device;

[0040] The alignment substrate refers to a substrate carrying a production line standard crystal. The production line standard crystal is a secondary standard crystal made based on the element-level standard crystal and is used as a reference for the production line calibration equipment.

[0041] The first measuring device is a standard measuring device, which is used to measure the parameters of the machine substrate to form reference measurement data;

[0042] The third measuring device measures the substrate of the machine to obtain the third measurement data, or measures the substrate to be etched to obtain the corresponding frequency information No. 3; and uploads it to the server;

[0043] The fine-tuning machine is provided with a second measuring device, which performs pre-engraving measurement on the substrate of the current sequence to obtain No. 2 frequency information corresponding to the ID of the substrate of the current sequence, performs real-time measurement on the substrate of the current sequence during etching to obtain in-engraving data, and measures the substrate of the current sequence after etching to obtain post-engraving parameters. The fine-tuning machine performs etching fine-tuning on the crystals one by one according to the fine-tuning parameters;

[0044] The server is used to receive and store the reference measurement data measured by the first measurement device, the No. 2 frequency information and post-engraving parameters measured by the second measurement device, the third measurement data measured by the third measurement device, the No. 3 frequency information corresponding to the substrate identity ID, and the theoretical frequency information of the substrate in this sequence;

[0045] The server generates a calibration compensation parameter of the third measuring device according to the difference between the third measurement data and the reference measurement data and transmits the parameter to the third measuring device;

[0046] The fine-tuning machine reads the No. 3 frequency information, No. 2 frequency information, and theoretical frequency information of the substrate in this sequence from the server, calculates and determines the fine-tuning parameters of the fine-tuning machine for the substrate in this sequence, and performs etching fine-tuning on the substrate in this sequence.

[0047] Furthermore, the third measuring device exists independently of the production line.

[0048] First, the third measuring device is used to measure the frequency of the crystal products at all positions on the substrate to be etched to obtain the No. 3 frequency information of the substrate, and the data of each crystal on the substrate to be etched (including its position and frequency) is transmitted to the server using the network protocol; then the fine-tuning machine reads the identity ID of the substrate to be etched to obtain the theoretical data of the product on the substrate to be etched, the theoretical data including the theoretical frequency information, and at the same time reads the No. 3 frequency information of the substrate stored in the server, the fine-tuning machine measures the frequency of the crystal products at all positions on the substrate to be etched to obtain the No. 2 frequency information, and the difference between the No. 3 frequency information and the No. 2 frequency information is recorded as the No. 2-3 frequency difference, and the No. 2-3 frequency difference is the difference between the No. 2-3 frequency information and the No. 2-3 frequency information. The frequency difference is the measurement error between the third measuring device and the second measuring device built into the fine-tuning machine. The difference between the frequency measured in real time by the second measuring device in the fine-tuning machine and the sum of the frequency errors of No. 2 and No. 3 and the theoretical data is the fine-tuning amount of the fine-tuning machine; the fine-tuning machine etches the crystal according to the fine-tuning amount, generally fine-tunes for 1s, and then tests it in real time (each test takes milliseconds), and updates the fine-tuning amount until the difference between the frequency measured in real time by the second measuring device and the sum of the frequency errors of No. 2 and No. 3 and the theoretical frequency is less than the set threshold, that is, it is considered that the frequency of the crystal has been adjusted to the target frequency, and then the next crystal is adjusted to ensure the accuracy of the crystal frequency.

[0049] Compared with the prior art, this solution has the following beneficial effects:

[0050] 1. Flexible production is possible, and one device can process crystals of different frequencies and loads at the same time;

[0051] 2. After the substrate to be etched enters the fine-tuning machine, the difference between the frequency information No. 3 measured directly by the third measuring device and the frequency initially measured by the fine-tuning machine (i.e., frequency information No. 2) and the real-time test value of the fine-tuning machine is used to give the fine-tuning amount. The probe completes etching at one time to ensure measurement accuracy and consistency, solving the problem of random deviation in testing caused by two contacts of the probe in the traditional processing mode.

[0052] 3. Since the third measuring device exists independently of the production line, its measurement result is not affected by the change of the working environment of the fine-tuning machine. The fine-tuning amount is given directly through the difference between the third measuring device and the initial frequency test of the fine-tuning machine and the real-time test value of the fine-tuning machine, which solves the problem of systematic error of the fine-tuning machine working environment on the test and improves the accuracy and discreteness of the etching frequency.

[0053] 4. The data of the machine substrate is recorded by the server. With the help of independent measurement of a third measuring device independent of the fine-tuning machine, the accuracy of the fine-tuning machine's measurement results can be indirectly confirmed. There is no need to align the wafer on the fine-tuning machine, thereby improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Figure 1 It is a flow chart of the whole-plate crystal fine-tuning method of the present invention;

[0055] Figure 2 It is a schematic structural diagram of the whole-board crystal fine-tuning system of the present invention. DETAILED DESCRIPTION

[0056] The principles and features of the present invention are described below in conjunction with the accompanying drawings. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0057] Embodiment 1:

[0058] like Figure 1 As shown, a whole-board crystal fine-tuning method is based on a whole-board crystal fine-tuning system, the whole-board crystal fine-tuning system includes a fine-tuning machine, a server, and a third measuring device, the fine-tuning machine is provided with a second measuring device, and the server pre-stores standard process parameters of crystals of various specifications; each substrate has a unique identity ID, based on which the theoretical specifications of the crystal on the substrate can be determined;

[0059] First, perform frequency calibration on the third measuring device, the steps are as follows:

[0060] J1. Use a rubidium atomic clock to calibrate the first measuring device as the standard measuring device, and perform 0 ohm, 50 ohm and open circuit calibration at the same time. After verifying that it is qualified with 50 ohms, use the calibrated first measuring device to measure the element-level standard crystal - specifically, the gold-plated standard crystal. According to the measured value and the theoretical value of the gold-plated standard crystal, set the compensation value of the first measuring device to ensure that the measurement result of the first measuring device is accurate.

[0061] J2. Read the identity ID of the counterpart substrate, measure the counterpart substrate with the first measuring device after setting the compensation value, and obtain the standard load frequency of the counterpart substrate; bind the identity ID of the counterpart substrate and the measured standard load frequency and upload them to the server, so that when the external device provides the identity ID of the counterpart substrate to the server, the server can provide the standard load frequency of the counterpart substrate to the outside;

[0062] J3. Read the identity ID of the counterpart substrate, measure the counterpart substrate with a third measuring device, obtain the measured load frequency corresponding to the third measuring device and the counterpart substrate, bind the identity information of the third measuring device, the identity ID of the counterpart substrate and the corresponding measured load frequency, and upload them to the server; after uploading the data to the server, the server will bind the identity information of the third measuring device with the corresponding measured load frequency and the identity ID of the counterpart substrate, which records the measurement results obtained by measuring the counterpart substrate with the third measuring device.

[0063] J4. The server calculates the difference between the standard load frequency and the measured load frequency of the crystal at the same position on the pair of machine substrates, sets it as the compensation value of the third measuring device, calibrates the third measuring device, and ensures that the data measured by the third measuring device is accurate.

[0064] In the above manner, all third measuring devices are calibrated.

[0065] After completing the above calibration work, you can start fine-tuning the whole crystal to be processed. The specific steps are as follows:

[0066] S1. Perform pre-engraving measurement. The third measuring device reads the identity ID of the current sequence substrate. The third measuring device is used to measure the current sequence substrate to obtain the position information of each crystal on the current sequence substrate and the corresponding frequency information No. 3. The position information of the crystal, the corresponding frequency information No. 3 of each crystal and the identity ID of the current sequence substrate are bound and uploaded to the server; the server records the frequency information No. 2 corresponding to the identity ID of this current sequence substrate. Here, "current sequence substrate" refers to the whole plate substrate currently in the processing process, which carries the crystal to be etched. The definition of "current sequence substrate" is to distinguish it from the "previous sequence substrate" and "subsequent sequence substrate" in the continuous production process.

[0067] S2, loading the substrate of this sequence into the fine-tuning machine, the fine-tuning machine obtains the identity ID of the substrate of this sequence, excites the substrate of this sequence before engraving, and uploads the information of this step to the server; thus, the server knows that the data measured by this fine-tuning machine next will be the data of the substrate corresponding to this identity ID; in addition, applying excitation to the crystal on the substrate before engraving can make the crystal on the substrate of this sequence in a working state, which can solve various problems such as minor cold solder joints and make it close to the use state, so that the data closest to the use state can be obtained during further measurement;

[0068] S3, the fine-tuning machine reads the standard process parameters corresponding to the substrate of this sequence from the server according to the identity ID of the substrate of this sequence, wherein the standard process parameters include standard frequency information;

[0069] S4. Use the second measuring device in the fine-tuning machine to measure the substrate in this sequence to obtain the position information of the crystals on the substrate in this sequence and the frequency information No. 2 corresponding to each crystal. At this time, the crystals on the substrate in this sequence have not been fine-tuned, so the frequency information No. 2 measured at this time is the frequency measured for the first time by the fine-tuning machine. In theory, it should be completely consistent with the frequency information No. 3 corresponding to this substrate in this sequence. However, due to the differences between the second measuring device and the third measuring device themselves, there will actually be a slight difference between the frequency information No. 3 and the frequency information No. 2.

[0070] S5, according to the identity ID of the substrate of this sequence, read the frequency information No. 3 corresponding to the substrate of this sequence obtained in step S1 from the server, and compare and calculate it with the frequency information No. 2 obtained in step S4, and obtain the frequency difference of No. 2 and No. 3 of the crystal at the same position on the substrate of this sequence, that is, the frequency difference of No. 2 and No. 3 reflects the error between the second measuring device and the third measuring device itself; the second measuring device measures the substrate of this sequence in real time The sum of the value plus the frequency difference of No. 2 and No. 3 is obtained. The difference between the theoretical frequency information in the standard process parameters is the fine-tuning amount of the fine-tuning machine.

[0071] S6. The fine-tuning machine continuously adjusts the fine-tuning amount according to the frequency value measured in real time by the second measuring device, the frequency difference between No. 2 and No. 3, and the standard process parameters, and performs etching fine-tuning on the crystal on the current sequence substrate. Generally, the fine-tuning amount is updated every 1S or so until the difference between the sum of the frequency measured in real time by the second measuring device in the fine-tuning machine and the frequency difference between No. 2 and No. 3 and the standard frequency is less than the set threshold value, and it is considered that this crystal has reached the designed theoretical frequency; switch to the next crystal, and cycle in sequence until all crystals that need fine-tuning on the current sequence substrate have been etched and adjusted, and upload the real-time measured frequency of the second measuring device after fine-tuning to the server.

[0072] Step S7 is: post-engraving excitation is performed on the substrate of this sequence. Post-engraving excitation means applying an excitation signal to the crystals on the fine-tuned substrate first, so that each crystal on the substrate is in a working state for a certain period of time. This can solve the influence of particles and other countermeasures that may be generated during the fine-tuning process on the measurement results.

[0073] In this example, there is one first measuring device, nine third measuring devices, and several fine-tuning machines.

[0074] In order to ensure the measurement accuracy of the independent third measuring device, the machine substrate will be cyclically measured between the only first measuring device and the nine third measuring devices, which is equivalent to any third measuring device or the first measuring device. After measuring nine substrates to be etched, it will measure the machine substrate once. All data will be uploaded to the server. The server uses the difference between the first and third measuring devices to measure the machine substrate to set the compensation value of the corresponding third measuring device, so that all third measuring devices are continuously calibrated with the first measuring device as the standard to ensure the accuracy of the measurement results.

[0075] The substrate of the machine only circulates between the first measuring device and the third measuring device and will not enter the fine-tuning machine. Since the second measuring device in the fine-tuning machine is not calibrated with the first measuring device, the frequency information No. 2 measured by it is not the real frequency information of the substrate to be etched. For the same substrate to be etched, there will be a measurement error No. 2 and No. 3 frequency difference corresponding to the substrate to be etched between the second measuring device and the third measuring device. In theory, the frequency information No. 2 plus the frequency difference No. 2 and No. 3 is the actual frequency of the substrate to be etched.

[0076] During the measurement process, if the newly measured value of the crystal at less than 5% of the positions in the same test channel differs from the last measured value by more than 1.5ppm, the crystal test contact is judged to be poor; if the frequency measurement value of the crystal at more than 20% of the positions in the same test channel differs from the last frequency measurement value by more than 1.5ppm, the third measuring device is judged to be faulty and needs to be shut down for inspection to find the cause, or recalibrated.

[0077] In this example, data exchange between the first measuring device, the second measuring device, the third measuring device and the server is all achieved through network transmission.

[0078] In addition, for the continuous production process, in order to improve work efficiency, when performing steps S2-S6 on the previous substrate, step S1 can be performed on the current substrate, and when performing steps S2-S6 on the subsequent substrate, step S7 can be executed, so as to make full use of the fine-tuning time of the fine-tuning machine to realize the pre-engraving measurement and post-engraving measurement work of the previous and next substrates.

[0079] Embodiment 2:

[0080] A system for fine-tuning the entire crystal panel, such as Figure 2 As shown, it includes a whole board tester, a fine-tuning production line, a unit-level standard crystal, a machine substrate, and a server. Several fine-tuning machines are arranged side by side on the production line. The whole board tester includes a first measuring device and nine third measuring devices.

[0081] The element-level standard crystal is a standard crystal used to calibrate the first measuring device;

[0082] The alignment substrate refers to a substrate carrying a production line standard crystal. The production line standard crystal is a secondary standard crystal made based on the element-level standard crystal and is used as a reference for the production line calibration equipment.

[0083] The first measuring device is a standard measuring device, which is used to measure the parameters of the machine substrate to form reference measurement data and upload it to the server;

[0084] The third measuring device measures the machine substrate to obtain the third measurement data, or measures the substrate to be etched to obtain the No. 3 frequency information corresponding to the substrate to be etched; and uploads it to the server; in order to distinguish substrates to be processed in different orders, the current sequence substrate is defined as the substrate currently being processed and carrying the crystal to be processed; the substrate processed before the current sequence substrate is called the previous sequence substrate, and the substrate processed after the current sequence substrate is called the subsequent sequence substrate.

[0085] The fine-tuning machine is provided with a second measuring device, which performs pre-engraving measurement on the substrate of the current sequence to obtain No. 2 frequency information corresponding to the ID of the substrate of the current sequence, performs real-time measurement on the substrate of the current sequence during etching to obtain in-engraving data, and measures the substrate of the current sequence after etching to obtain post-engraving parameters. The fine-tuning machine performs etching fine-tuning on the crystals one by one according to the fine-tuning parameters;

[0086] The server is used to receive and store the reference measurement data measured by the first measurement device, the No. 2 frequency information and post-engraving parameters measured by the second measurement device, the third measurement data measured by the third measurement device, the No. 3 frequency information corresponding to the substrate identity ID, and the theoretical frequency information of the substrate in this sequence;

[0087] The server generates a calibration compensation parameter of the third measuring device according to the difference between the third measurement data and the reference measurement data and transmits the parameter to the third measuring device;

[0088] The fine-tuning machine reads the No. 3 frequency information, No. 2 frequency information, and theoretical frequency information of the substrate in this sequence from the server, calculates and determines the fine-tuning parameters of the fine-tuning machine for the substrate in this sequence, and performs etching fine-tuning on the substrate in this sequence.

[0089] The substrate of the machine is cyclically measured in the whole board testing machine, that is, Figure 2 As shown, the machine substrate is cyclically measured between the first measuring device and nine third measuring devices, so as to periodically calibrate the third measuring devices with the first measuring device as a reference.

[0090] For example, for a substrate containing 300 crystals, it takes 12-15 minutes to fine-tune the 300 crystals on the entire substrate one by one, but it only takes about 2 minutes to measure the 300 crystals once using the third measuring device (the third measuring device only measures and does not etch, so the speed is very fast). Therefore, the measurement of frequency information No. 3 can be completely carried out by using the fine-tuning machine to fine-tune the previous substrate or the subsequent substrate, and the current substrate can be measured during the waiting time in the queue, without affecting the normal production rhythm.

[0091] This system can achieve 100% measurement of crystals, greatly improving the accuracy of quality monitoring, facilitating process optimization, realizing big data closed-loop analysis of fine-tuning, pressure sealing, and post-aging testing, and improving product quality consistency.

[0092] Since the parameters of the machine boards corresponding to different production specifications are tested in advance and stored in the server, and the calibration data is obtained by comparing the second measurement frequency and the third measurement frequency with the nominal frequency using the server, the automatic calibration of the fine-tuning machine is realized with high speed, so mixed-frequency production of a production line can be realized, meeting the needs of multi-specification and small-batch production.

[0093] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A whole-plate crystal fine-tuning method, characterized in that: Based on the whole-board crystal fine-tuning system, the whole-board crystal fine-tuning system includes a fine-tuning machine, a server, and a third measuring device. The fine-tuning machine is provided with a second measuring device, and the server pre-stores standard process parameters of crystals of various specifications; each substrate has a unique identity ID, based on which the specifications of the crystal on the substrate can be determined; the machine substrate refers to a substrate carrying a production line standard crystal, and the production line standard crystal is a secondary standard crystal made based on the element-level standard crystal, which is used as a reference for calibrating production equipment. The element-level standard crystal is a crystal used to calibrate the standard measuring device, and an external signal is used to calibrate the clock of the first measuring device as the standard measuring device. The first measuring device after the clock is calibrated measures the element-level standard crystal, and the compensation value of the first measuring device is set according to the measured value and the theoretical value of the element-level standard crystal to ensure the accuracy of the first measuring device. The machine substrate is continuously measured between the first measuring device and the third measuring device during the production process to achieve periodic calibration of the third measuring device. The fine-tuning steps are as follows: S1, perform pre-engraving measurement to obtain the identity ID of the substrate in this sequence, use a third measuring device to measure the substrate in this sequence, obtain the position information of each crystal on the substrate in this sequence and the corresponding No. 3 frequency information, bind the position information of the crystal, the corresponding No. 3 frequency information of each crystal and the identity ID of the substrate in this sequence and upload them to the server; S2, obtain the identity ID of the substrate in this sequence, load the substrate in this sequence into the fine-tuning machine; and upload the information of this step to the server; S3, the fine-tuning machine reads the standard process parameters corresponding to the substrate in this order from the server according to the identity ID of the substrate in this order, wherein the standard process parameters include standard frequency information; S4, using the second measuring device in the fine-tuning machine to measure the substrate of this sequence, and obtain the position information of the crystals on the substrate of this sequence and the No. 2 frequency information corresponding to each crystal; S5, the fine-tuning machine reads the frequency information No. 3 corresponding to the substrate of the current sequence obtained in step S1 from the server according to the identity ID of the substrate of the current sequence, and compares and calculates it with the frequency information No. 2 obtained in step S4 to obtain the frequency difference between No. 2 and No. 3 of the crystal at the same position on the substrate of the current sequence; S6, the fine-tuning machine performs etching fine-tuning on the crystal on the substrate of this sequence according to the No. 2 frequency information, the No. 2 and No. 3 frequency difference and the standard process parameters, until the difference between the sum of the frequency measured in real time by the second measuring device in the fine-tuning machine and the No. 2 and No. 3 frequency difference and the standard frequency is less than the set threshold value; The real-time measured frequency of the second measuring device after fine-tuning is uploaded to the server.

2. The whole-plate crystal fine-tuning method according to claim 1, characterized in that: For a continuous production process, when the steps S2 to S6 are performed on the previous order substrate, the step S1 is performed on the current order substrate.

3. The whole-plate crystal fine-tuning method according to claim 1 or 2, characterized in that: The method further includes step S7 after step S6, wherein step S7 is: performing post-engraving excitation on the substrate after being etched and fine-tuned by the fine-tuning machine.

4. The whole-plate crystal fine-tuning method according to claim 1 or 2, characterized in that: The periodic calibration process of the third measuring device is as follows: First, read the identity ID of the counterpart substrate, measure the counterpart substrate with a first measuring device, and obtain the standard load frequency of the counterpart substrate; bind the identity ID of the counterpart substrate and the measured standard load frequency and upload them to the server; Secondly, read the identity ID of the counterpart substrate, use a third measuring device to measure the counterpart substrate, obtain the measurement load frequency that matches the third measuring device and the counterpart substrate, bind the identity information of the third measuring device, the identity ID of the counterpart substrate and the corresponding measurement load frequency, and upload them to the server; Finally, the server calculates the difference between the standard load frequency and the measured load frequency of the crystal at the same position on the machine substrate, sets the compensation value of the third measuring device of this block, and completes the calibration of the third measuring device.

5. The whole-plate crystal fine-tuning method according to claim 4, characterized in that: After every set time or after the third measuring device has measured a set number of substrates to be etched, the third measuring device is calibrated using the first measuring device and the machine substrate. If the newly measured value of the crystal at less than 5% of the positions in the same test channel in the third measuring device or the first measuring device differs from the last measured value by more than 1.5ppm, it is determined that the crystal test contact is poor; if the crystal frequency measurement value at more than 20% of the positions in the same test channel differs from the last frequency measurement value by more than 1.5ppm, it is determined that the third measuring device or the first measuring device is faulty.

6. The whole-plate crystal fine-tuning method according to claim 4, characterized in that: The data exchange between the first measuring device, the test board and the server is realized through network transmission.

7. The whole-plate crystal fine-tuning method according to any one of claims 1, 2, 5, and 6, characterized in that: Before the fine-tuning machine performs the first measurement on the substrate of this sequence, it also includes a process of pre-engraving excitation on the substrate of this sequence.

8. A system for fine-tuning the entire crystal panel, characterized in that: It includes a whole board tester, a wafer-level standard, a substrate alignment machine, a fine-tuning machine, a first measuring device, a third measuring device, and a server; The element-level standard crystal is a standard crystal used to calibrate the first measuring device; The alignment substrate refers to a substrate carrying a production line standard crystal. The production line standard crystal is a secondary standard crystal made based on the element-level standard crystal and is used as a reference for the production line calibration equipment. The first measuring device is a standard measuring device, which is used to measure the parameters of the machine substrate to form reference measurement data; And upload to the server; The third measuring device measures the substrate of the machine to obtain the third measurement data, or measures the substrate to be etched to obtain the corresponding frequency information No. 3; and uploads it to the server; The fine-tuning machine is provided with a second measuring device, which measures the substrate of the current sequence before etching to obtain the No. 2 frequency information corresponding to the ID of the substrate of the current sequence, measures the substrate of the current sequence in real time during etching to obtain the data during etching, and measures the substrate of the current sequence after etching to obtain the post-etching parameters; The fine-tuning machine performs etching and fine-tuning on the crystals one by one according to the fine-tuning parameters; The server is used to receive and store the reference measurement data measured by the first measurement device, the No. 2 frequency information and post-engraving parameters measured by the second measurement device, the third measurement data measured by the third measurement device, the No. 3 frequency information corresponding to the substrate identity ID, and the theoretical frequency information of the substrate in this sequence; The server generates a calibration compensation parameter of the third measuring device according to the difference between the third measurement data and the reference measurement data and transmits the parameter to the third measuring device; The fine-tuning machine reads the No. 3 frequency information, No. 2 frequency information, and theoretical frequency information of the substrate in this sequence from the server, calculates and determines the fine-tuning parameters of the fine-tuning machine for the substrate in this sequence, and performs etching fine-tuning on the substrate in this sequence; The paired substrate is cyclically measured in the whole-board testing machine.

9. The system for fine-tuning the whole crystal panel according to claim 8, characterized in that: The first measuring device and the third measuring device exist independently of the production line.

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