A method to improve the accuracy of calculating the charge density on a plane boundary

By changing the first type of integral equation in the BIE-WOS method to the second type of integral equation, and combining large-scale parallel computing technology, the problem of low calculation accuracy in the existing technology is solved, and a more accurate calculation of the charge density of interconnected lines and dielectric surfaces in nano-integrated circuits is achieved.

CN114519314BActive Publication Date: 2025-04-29FUDAN UNIVERSITY
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Patent Information

Application Number
CN202011312648.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-11-20
Publication Date
2025-04-29
Estimated Expiration
2040-11-20

AI Technical Summary

Technical Problem

In the prior art, the calculation accuracy of the planar surface charge density extraction method based on the boundary integral equation and the random mixing method is not high, and it is difficult to effectively solve the calculation problem of the full-chip-level interconnection line and dielectric surface charge density in nano-integrated circuits.

Method used

The first type of integral equation used in the original BIE-WOS method is changed to the second type of integral equation, combined with large-scale parallel computing technology, by constructing hemispheres and plane discs, it is converted into the second type of integral equation with closed surfaces, and numerical integration is performed to improve the calculation accuracy.

Benefits of technology

It effectively improves the accuracy of the algorithm and can more accurately calculate the surface charge density of interconnected lines and dielectric surfaces in nano-integrated circuits, solving the problem of full-chip-level computing.

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Abstract

The present invention belongs to the field of computer-aided design / electronic design automation for integrated circuits, and specifically relates to a method for improving the accuracy of solving the surface charge density of the plane boundary of a conductor or dielectric by using boundary integral equations and random hybrid methods in the direction of extracting parasitic parameters of integrated circuits. This method constructs a hemisphere with the point to be solved on the boundary as the center of the sphere, and the intersection with the regional boundary is a plane disk. The second-type boundary integral equation of the spherical Green function is applied to solve the surface charge density at the point to be solved, and the surface charge density at the point to be solved is converted into an integral on a closed surface composed of a hemisphere and a plane disk. The present invention is a local solution method, which can calculate the surface charge density on the local boundary with high precision, without the need to discretize the interconnection lines and the dielectric boundary surface; and has the advantage of the natural parallelism of the random method, and is easy to implement large-scale parallel computing.
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