A single-particle burnout simulation method

By simulating the single-particle burning method, the collision ionization parameters and electron-hole pair local generation rate are obtained, which solves the problem of electrical performance changes in semiconductor devices under the single-particle effect and improves the device's radiation resistance.

CN115600434BActive Publication Date: 2025-08-05HARBIN INST OF TECH
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Patent Information

Application Number
CN202211410928.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-11-11
Publication Date
2025-08-05
Estimated Expiration
2042-11-11

AI Technical Summary

Technical Problem

The prior art is difficult to judge the changes in the electrical performance of semiconductor devices under the single particle effect, resulting in the device being susceptible to fatal damage to the radiation environment and performance degradation.

Method used

By simulating the single-particle burning method, the collision ionization coefficient, lattice temperature and current density parameters of the particle incident are obtained, the collision ionization parameters are determined, and the electron-hole pair local generation rate model is combined to simulate the generation rate of the electron-hole pair to simulate the single-particle burning situation.

Benefits of technology

The research on the single particle incident degradation law and effect mechanism of semiconductor devices has been achieved, and the radiation resistance and reinforcement technical performance of the device has been improved.

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Abstract

The present invention proposes a single-particle burnout simulation method, comprising: obtaining a preset impact ionization coefficient, lattice temperature, electric field strength, and current density parameters for particle impact; determining the impact ionization parameters based on the impact ionization coefficient and the lattice temperature; determining the electron ionization parameters and the hole ionization parameters based on the impact ionization parameters and the electric field strength; and simulating the localized electron-hole pair generation rate based on the electron ionization parameters, the hole ionization parameters, the current density parameters, and a preset electron-hole pair localized generation rate model. The present invention has the beneficial effect of simulating the electron-hole pair generation rate during single-particle impact, thereby achieving the impact ionization generated when a single-particle effect occurs in a simulated device, thereby simulating the single-particle burnout caused by a single high-energy particle incident on a semiconductor device.
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