A single-particle burnout simulation method

Abstract

The present invention proposes a single-particle burnout simulation method, comprising: obtaining a preset impact ionization coefficient, lattice temperature, electric field strength, and current density parameters for particle impact; determining the impact ionization parameters based on the impact ionization coefficient and the lattice temperature; determining the electron ionization parameters and the hole ionization parameters based on the impact ionization parameters and the electric field strength; and simulating the localized electron-hole pair generation rate based on the electron ionization parameters, the hole ionization parameters, the current density parameters, and a preset electron-hole pair localized generation rate model. The present invention has the beneficial effect of simulating the electron-hole pair generation rate during single-particle impact, thereby achieving the impact ionization generated when a single-particle effect occurs in a simulated device, thereby simulating the single-particle burnout caused by a single high-energy particle incident on a semiconductor device.

Description

Technical Field

[0001] The present invention relates to the field of single-particle simulation of semiconductor devices, and in particular to a single-particle burnout simulation method. Background Art

[0002] With the continuous advancement of space technology, more and more semiconductor devices and equipment are operating in various radiation environments. Common radiation environments include space radiation, air radiation, and man-made radiation. According to the mechanism of radiation damage and performance degradation law of electronic components, a common radiation effect is that after a single high-energy particle is incident on a semiconductor device, due to the effect of ionization energy deposition, a large number of electron-hole pairs are induced in the sensitive area of the device. After the electron-hole pairs are collected by the electric field, a pulse current is formed, which causes the working state of the device to change.

[0003] However, current technology makes it difficult to determine changes in the electrical performance of a device when it is affected by a single-particle effect. Consequently, semiconductor devices often suffer fatal damage and performance degradation due to radiation environments. Summary of the Invention

[0004] The problem to be solved by the present invention is how to judge the change of the electrical performance of a device caused by a single event effect.

[0005] To solve the above problems, the present invention provides a single event burnout simulation method, comprising the following steps:

[0006] Obtaining preset particle impact ionization coefficient, lattice temperature, electric field intensity and current density parameters;

[0007] determining an impact ionization parameter according to the impact ionization coefficient and the lattice temperature;

[0008] determining an electron ionization parameter and a hole ionization parameter according to the impact ionization parameter and the electric field strength;

[0009] The electron-hole pair local generation rate is simulated according to the electron ionization parameter, the hole ionization parameter, the current density parameter and a preset electron-hole pair local generation rate model.

[0010] In this technical solution, the local generation rate of electron-hole pairs caused by the single-particle effect is simulated by using the preset impact ionization parameters of the particle incident, lattice temperature, electric field strength and current density parameters, thereby simulating the impact ionization generated by the semiconductor device when the single-particle effect occurs. The local generation rate of electron-hole pairs is then simulated by combining the preset electron-hole pair local generation rate model to simulate the situation where a single-particle burnout occurs due to a single high-energy particle incident on the semiconductor device. This is helpful to study the degradation law, effect mechanism and new radiation-resistant reinforcement technology of single-particle incident semiconductor devices, and further improve the performance of semiconductor devices.

[0011] Furthermore, the impact ionization coefficient includes a impact ionization temperature coefficient and a impact ionization electric field coefficient, the impact ionization electric field coefficient includes a first impact ionization electric field coefficient and a second impact ionization electric field coefficient, and determining the impact ionization parameter according to the impact ionization coefficient and the lattice temperature includes:

[0012] When the electric field strength is greater than a preset electric field strength, determining a collision ionization parameter according to the first collision ionization electric field coefficient, the collision ionization temperature coefficient, the lattice temperature, and a first collision ionization parameter determination formula;

[0013] When the electric field strength is less than or equal to the preset electric field strength, the collision ionization parameter is determined according to the second collision ionization electric field coefficient, the collision ionization temperature coefficient, the lattice temperature, and a second collision ionization parameter determination formula.

[0014] Furthermore, the first collision ionization parameter determination formula includes:

[0015]

[0016]

[0017]

[0018]

[0019] The second collision ionization parameter determination formula includes:

[0020]

[0021]

[0022]

[0023]

[0024] Among them, AN, AP, BN, and BP are the collision ionization parameters, AN1, AP1, BN1, and BP1 are the first collision ionization electric field coefficients, AN2, AP2, BN2, and BP2 are the second collision ionization electric field coefficients, A·NT, A·PT, B·NT, B·PT, M·ANT, M·APT, M·BNT, and M·BPT are the collision ionization temperature coefficients, and T L is the lattice temperature.

[0025] Furthermore, the determining of the electron ionization parameter and the hole ionization parameter according to the impact ionization parameter and the electric field strength includes:

[0026] Determining the electron ionization parameter according to the impact ionization parameter, the electric field strength and the electron ionization parameter determination formula;

[0027] The hole ionization parameter is determined according to the impact ionization parameter, the electric field strength and a hole ionization parameter determination formula.

[0028] Furthermore, the electron ionization parameter determination formula includes:

[0029]

[0030] The hole ionization parameter determination formula includes:

[0031]

[0032] Among them, a n is the electron ionization parameter, a p is the hole ionization parameter, and AN, BN, AP, BP, BETAN, and BETAP are the impact ionization parameters.

[0033] Furthermore, the current density parameter includes an electron current density parameter and a hole current density parameter.

[0034] Furthermore, the preset electron-hole pair local generation rate model includes:

[0035]

[0036] Wherein, G is the local generation rate of electron-hole pairs, a n is the electron ionization parameter, a p is the hole ionization parameter, is the electron current density parameter, is the hole current density parameter.

[0037] The present invention also provides a single event burnout simulation device, comprising:

[0038] An acquisition module is used to obtain the preset parameters of particle impact ionization coefficient, lattice temperature, electric field intensity and current density;

[0039] a processing module, configured to determine an impact ionization parameter according to the impact ionization coefficient and the lattice temperature, and to determine an electron ionization parameter and a hole ionization parameter according to the impact ionization parameter and the electric field strength;

[0040] The processing module is further configured to simulate the localized generation rate of electron-hole pairs according to the electron ionization parameter, the hole ionization parameter, the current density parameter, and a preset localized generation rate model of electron-hole pairs.

[0041] The single-particle burnout simulation device of the present invention has similar technical effects to the above-mentioned single-particle burnout simulation method, and will not be described in detail here.

[0042] The present invention also provides a computing device, comprising a memory and a processor:

[0043] The memory is used to store computer programs;

[0044] The processor is configured to implement the single event burnout simulation method described above when executing the computer program.

[0045] The computing device described in the present invention has similar technical effects to the above-mentioned single-particle burnout simulation method, and will not be described in detail here.

[0046] The present invention also provides a computer-readable storage medium storing a computer program. When the computer program is read and executed by a processor, the single-particle burnout simulation method described above is implemented.

[0047] The computer-readable storage medium in the present invention has similar technical effects to the above-mentioned single-particle burnout simulation method, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 This is a flow chart of the single event burnout simulation method according to an embodiment of the present invention;

[0049] Figure 2 A single particle transient diagram obtained using the single particle burnout simulation method of the present invention;

[0050] Figure 3 This is a single-particle transient diagram obtained by using the single-particle burnout simulation method of the present invention in a PN device. DETAILED DESCRIPTION

[0051] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0052] It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, such that the embodiments of the present invention described herein can be practiced in an order other than that illustrated or described herein.

[0053] Throughout this specification, references to the terms "embodiment," "one embodiment," and "an implementation" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or implementation are included in at least one embodiment or implementation of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or implementation. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or implementations.

[0054] Combine Figure 1 As shown, an embodiment of the present invention provides a single event burnout simulation method, comprising the steps of:

[0055] Obtaining preset particle impact ionization coefficient, lattice temperature, electric field intensity and current density parameters;

[0056] determining an impact ionization parameter according to the impact ionization coefficient and the lattice temperature;

[0057] determining an electron ionization parameter and a hole ionization parameter according to the impact ionization parameter and the electric field strength;

[0058] The electron-hole pair local generation rate is simulated according to the electron ionization parameter, the hole ionization parameter, the current density parameter and a preset electron-hole pair local generation rate model.

[0059] Specifically, in this embodiment, the collision ionization parameters are determined by presetting the collision ionization coefficient of the particle incident and the lattice temperature, and then the electron ionization parameters and the hole ionization parameters are obtained from the collision ionization parameters and the electric field strength. Finally, the electron-hole pair local generation rate is simulated by the electron ionization parameters, the hole ionization parameters, the current density parameters and the preset electron-hole pair local generation rate model.

[0060] In this embodiment, the local generation rate of electron-hole pairs caused by the single-particle effect is simulated by using the preset impact ionization parameters of the particle incident, the lattice temperature, the electric field strength, and the current density parameters, thereby simulating the impact ionization generated by the semiconductor device when the single-particle effect occurs. The local generation rate of electron-hole pairs is then obtained by combining the preset electron-hole pair local generation rate model to simulate the situation where a single-particle burnout occurs due to a single high-energy particle incident on the semiconductor device. This is helpful to study the degradation law, effect mechanism, and new radiation-resistant reinforcement technology of semiconductor devices caused by single-particle incident, and further improve the performance of semiconductor devices.

[0061] In an optional embodiment of the present invention, the impact ionization coefficient includes a impact ionization temperature coefficient and a impact ionization electric field coefficient, the impact ionization electric field coefficient includes a first impact ionization electric field coefficient and a second impact ionization electric field coefficient, and determining the impact ionization parameter according to the impact ionization coefficient and the lattice temperature includes:

[0062] When the electric field strength is greater than a preset electric field strength, determining a collision ionization parameter according to the first collision ionization electric field coefficient, the collision ionization temperature coefficient, the lattice temperature, and a first collision ionization parameter determination formula;

[0063] When the electric field strength is less than or equal to the preset electric field strength, the collision ionization parameter is determined according to the second collision ionization electric field coefficient, the collision ionization temperature coefficient, the lattice temperature, and a second collision ionization parameter determination formula.

[0064] In an optional embodiment of the present invention, the first impact ionization parameter determination formula includes:

[0065]

[0066]

[0067]

[0068]

[0069] The second collision ionization parameter determination formula includes:

[0070]

[0071]

[0072]

[0073]

[0074] Among them, AN, AP, BN, and BP are the collision ionization parameters, AN1, AP1, BN1, and BP1 are the first collision ionization electric field coefficients, AN2, AP2, BN2, and BP2 are the second collision ionization electric field coefficients, A·NT, A·PT, B·NT, B·PT, M·ANT, M·APT, M·BNT, and M·BPT are the collision ionization temperature coefficients, and T L is the lattice temperature.

[0075] Specifically, for example, the first impact ionization electric field coefficient AN1 is preset to 7.03×10 5 cm -1 , AP1 is 6.71×105 cm -1 , BN1 is 1.231×10 6 V / cm, BP1 is 1.693×10 6 V / cm, and the second impact ionization electric field coefficient AN2 is 7.03×10 5 cm -1 , AP2 is 1.58×10 6 cm -1 , BN2 is 1.231×10 6 V / cm, BP2 is 2.036×10 6 V / cm, the impact ionization temperature coefficients A·NT are 0.588, A·PT are 0.588, B·NT are 0.248, B·PT are 0.248, M·ANT are 1.0, M·APT are 1.0, M·BNT are 1.0, and M·BPT are 1.0. The preset electric field strength is defined as 4×10 5 V / cm, for electric field strength greater than 4×10 5 V / cm, the first impact ionization electric field coefficient is selected to determine the impact ionization parameters, and the electric field strength is less than or equal to 4×10 5 V / cm, the second impact ionization electric field coefficient is selected to determine the impact ionization parameters.

[0076] In this embodiment, according to the different electric field intensities, the impact ionization parameters under different electric field intensities are simulated and determined, so that the obtained impact ionization parameters are closer to the impact ionization parameters in the actual single event effect.

[0077] In an optional embodiment of the present invention, determining the electron ionization parameter and the hole ionization parameter according to the impact ionization parameter and the electric field strength includes:

[0078] Determining the electron ionization parameter according to the impact ionization parameter, the electric field strength and the electron ionization parameter determination formula;

[0079] The hole ionization parameter is determined according to the impact ionization parameter, the electric field strength and a hole ionization parameter determination formula.

[0080] In an optional embodiment of the present invention, the electron ionization parameter determination formula includes:

[0081]

[0082] The hole ionization parameter determination formula includes:

[0083]

[0084] Among them, a n is the electron ionization parameter, a pis the hole ionization parameter, and AN, BN, AP, BP, BETAN, and BETAP are the impact ionization parameters.

[0085] In this embodiment, the electron ionization parameter is obtained by obtaining the electric field strength in the current direction at a specific location in the structure and combining it with the above-described collision ionization parameter and electron ionization parameter determination formula corresponding to the electric field strength. The hole ionization parameter is obtained by combining the electric field strength with the corresponding collision ionization parameter and hole ionization parameter determination formula. The specific electric field strength and preset collision ionization parameters make the obtained electron ionization coefficient and hole ionization coefficient more conducive to the simulation of the localized generation rate of electron-hole pairs.

[0086] In an optional embodiment of the present invention, it is characterized in that the current density parameter includes an electron current density parameter and a hole current density parameter.

[0087] In an optional embodiment of the present invention, the preset electron-hole pair local generation rate model includes:

[0088]

[0089] Wherein, G is the local generation rate of electron-hole pairs, a n is the electron ionization parameter, a p is the hole ionization parameter, is the electron current density parameter, is the hole current density parameter.

[0090] Specifically, by presetting the impact ionization coefficient and current density parameters and combining the preset electron-hole pair local generation rate model to simulate the electron-hole pair local generation rate, the impact ionization generated by the semiconductor device when the single particle effect occurs is simulated, and then the single particle burning caused by the particle incident on the semiconductor device is simulated.

[0091] Combine Figure 2 As shown, when an impact ionization model simulates the local generation rate of electron-hole pairs through a preset local generation rate model of electron-hole pairs, thereby simulating the impact ionization generated by the semiconductor device when a single-particle effect occurs, the current does not return to 0, and it is determined that a single-particle burnout has occurred.

[0092] Combine Figure 3 As shown, when the impact ionization model simulates the local generation rate of electron-hole pairs through a preset local generation rate model of electron-hole pairs, thereby simulating the impact ionization generated by the semiconductor device when a single-particle effect occurs, the current returns to 0, and it is determined that no single-particle burnout has occurred.

[0093] Another embodiment of the present invention provides a single event burnout simulation device, comprising:

[0094] An acquisition module is used to obtain the preset parameters of particle impact ionization coefficient, lattice temperature, electric field intensity and current density;

[0095] a processing module, configured to determine an impact ionization parameter according to the impact ionization coefficient and the lattice temperature, and to determine an electron ionization parameter and a hole ionization parameter according to the impact ionization parameter and the electric field strength;

[0096] The processing module is further configured to simulate the localized generation rate of electron-hole pairs according to the electron ionization parameter, the hole ionization parameter, the current density parameter, and a preset localized generation rate model of electron-hole pairs.

[0097] The single-particle burnout simulation device of the present invention has similar technical effects to the above-mentioned single-particle burnout simulation method, and will not be described in detail here.

[0098] A computing device according to another embodiment of the present invention includes a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the above-mentioned single event burnout simulation method when executing the computer program.

[0099] The computing device in the present invention has similar technical effects to the above-mentioned single-particle burnout simulation method, which will not be described in detail here.

[0100] Another embodiment of the present invention provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program. When the computer program is read and executed by a processor, the computer program implements the above-mentioned single-event burnout simulation test method.

[0101] The computer-readable storage medium in the present invention has similar technical effects to the above-mentioned single-particle burnout simulation method, which will not be described in detail here.

[0102] Generally speaking, computer instructions for implementing the method of the present invention may be carried by any combination of one or more computer-readable storage media. Non-transitory computer-readable storage media may include any computer-readable media except for signals that are temporarily propagating.

[0103] A computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples (a non-exhaustive list) of computer-readable storage media include: an electrical connection having one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof. In this document, a computer-readable storage medium may be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, apparatus, or device.

[0104] The program code for performing the operations of the present invention can be written in one or more programming languages or a combination thereof, including object-oriented programming languages such as Java, Smalltalk, C++, and conventional procedural programming languages such as "C" or similar programming languages, in particular, Python suitable for neural network computing and platform frameworks based on TensorFlow, PyTorch, etc. can be used. The program code can be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computer (for example, through the Internet using an Internet service provider).

[0105] Although the present disclosure is disclosed as above, the protection scope of the present disclosure is not limited thereto. Those skilled in the art may make various changes and modifications without departing from the spirit and scope of the present disclosure, and these changes and modifications will fall within the protection scope of the present invention.

Claims

1. A single event burnout simulation method, characterized in that: include: Obtaining preset particle impact ionization coefficient, lattice temperature, electric field intensity and current density parameters; Determining the collision ionization parameter according to the collision ionization coefficient and the lattice temperature includes: when the electric field strength is greater than a preset electric field strength, determining the collision ionization parameter according to a first collision ionization electric field coefficient, a collision ionization temperature coefficient, the lattice temperature, and a first collision ionization parameter determination formula; when the electric field strength is less than or equal to the preset electric field strength, determining the collision ionization parameter according to a second collision ionization electric field coefficient, the collision ionization temperature coefficient, the lattice temperature, and a second collision ionization parameter determination formula, wherein the collision ionization coefficient includes the collision ionization temperature coefficient and the collision ionization electric field coefficient, the collision ionization electric field coefficient includes the first collision ionization electric field coefficient and the second collision ionization electric field coefficient, and the first collision ionization parameter determination formula includes: ； ； ； ； The second collision ionization parameter determination formula includes: ； ； ； ； Among them, AN, AP, BN, and BP are the impact ionization parameters, AN1, AP1, AB1, and BP1 are the first impact ionization electric field coefficients, AN2, AP2, AB2, and BP2 are the second impact ionization electric field coefficients, and A·NT, A·PT, B·NT, B·PT, M·ANT, M·APT, M·BNT, and M·BPT are the impact ionization temperature coefficients. is the lattice temperature; determining an electron ionization parameter and a hole ionization parameter according to the impact ionization parameter and the electric field strength; The electron-hole pair local generation rate is simulated according to the electron ionization parameter, the hole ionization parameter, the current density parameter and a preset electron-hole pair local generation rate model.

2. The single event burnout simulation method according to claim 1, characterized in that: Determining the electron ionization parameter and the hole ionization parameter according to the impact ionization parameter and the electric field strength includes: Determining the electron ionization parameter according to the impact ionization parameter, the electric field strength and the electron ionization parameter determination formula; The hole ionization parameter is determined according to the impact ionization parameter, the electric field strength and a hole ionization parameter determination formula.

3. The single event burnout simulation method according to claim 2, characterized in that: The electron ionization parameter determination formula includes: ； The hole ionization parameter determination formula includes: ； in, is the electron ionization parameter, is the hole ionization parameter, AN, BN, AP, BP, BETAN, BETAP are the impact ionization parameters, and E is the electric field intensity.

4. The single event burnout simulation method according to any one of claims 1 to 3, characterized in that: The current density parameters include electron current density parameters and hole current density parameters.

5. The single event burnout simulation method according to claim 4, characterized in that: The preset electron-hole pair local generation rate model includes: ； Wherein, G is the local generation rate of electron-hole pairs, is the electron ionization parameter, is the hole ionization parameter, is the electron current density parameter, is the hole current density parameter.

6. A single event burnout simulation device, characterized in that: include: An acquisition module is used to obtain the preset parameters of particle impact ionization coefficient, lattice temperature, electric field intensity and current density; A processing module is configured to determine a collision ionization parameter based on the collision ionization coefficient and the lattice temperature, and to determine an electron ionization parameter and a hole ionization parameter based on the collision ionization parameter and the electric field strength, wherein determining the collision ionization parameter based on the collision ionization coefficient and the lattice temperature comprises: when the electric field strength is greater than a preset electric field strength, determining the collision ionization parameter based on a first collision ionization electric field coefficient, a collision ionization temperature coefficient, the lattice temperature, and a first collision ionization parameter determination formula; and when the electric field strength is less than or equal to the preset electric field strength, determining the collision ionization parameter based on a second collision ionization electric field coefficient, the collision ionization temperature coefficient, the lattice temperature, and a second collision ionization parameter determination formula, wherein the collision ionization coefficient comprises the collision ionization temperature coefficient and the collision ionization electric field coefficient, the collision ionization electric field coefficient comprises the first collision ionization electric field coefficient and the second collision ionization electric field coefficient, and the first collision ionization parameter determination formula comprises: ； ； ； ； The second collision ionization parameter determination formula includes: ； ； ； ； Among them, AN, AP, BN, and BP are the impact ionization parameters, AN1, AP1, AB1, and BP1 are the first impact ionization electric field coefficients, AN2, AP2, AB2, and BP2 are the second impact ionization electric field coefficients, and A·NT, A·PT, B·NT, B·PT, M·ANT, M·APT, M·BNT, and M·BPT are the impact ionization temperature coefficients. is the lattice temperature; The processing module is further configured to simulate the localized generation rate of electron-hole pairs according to the electron ionization parameter, the hole ionization parameter, the current density parameter, and a preset localized generation rate model of electron-hole pairs.

7. A computing device, characterized in that The method comprises a memory and a processor, wherein the memory is used to store a computer program, and the processor is used to implement the single event burnout simulation method according to any one of claims 1 to 5 when executing the computer program.

8. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is read and executed by a processor, the single-event burnout simulation method according to any one of claims 1 to 5 is implemented.

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