Thermally diode based heat conduction path logic regulation system and regulation method

Abstract

The application discloses a heat conduction path logic regulation system and method based on a thermal diode, and the system comprises a forward thermal diode, a reverse thermal diode and a structured external field. The forward and reverse thermal diodes have the same structure and are composed of a mold, a logic flow channel and a functional fluid; the logic flow channel is composed of a center branch fluid storage chamber, a center branch flow channel, a working chamber, an edge branch flow channel and an edge branch fluid storage chamber. When there is no structured external field, the thermal diode can be used as a one-way heat transfer device to realize switching of two heat conduction paths, form two temperature distributions on a heat flow output surface, and the temperature of the forward thermal diode on the heat flow output surface is always greater than that of the reverse thermal diode; when the structured external field is applied, the forward and reverse thermal diodes can respectively realize different logic AND gates and cooperatively realize a logic NOT gate, and form wide and controllable temperature distributions on the heat flow output surface, thereby providing a new idea for meeting different thermal control requirements of multiple devices in a complex temperature field.

Description

Technical Field

[0001] This invention belongs to the field of micro-nano scale heat transfer and control, specifically relating to a heat conduction path logic control system and control method based on thermal diodes. Background Technology

[0002] In recent years, with the rapid development of science and technology, the requirements for thermal control technology in fields such as electronic communications, energy and power, and aerospace have been increasing. For temperature-sensitive devices such as electronic components, motors, and batteries, or systems carrying precision measuring instruments with strict requirements for operating temperature ranges, the periodic heat loads or temperature fluctuations in their operating scenarios will have a significant impact on the system's service performance. If effective thermal control measures are not taken, uneven temperature distribution will occur within the system, leading to a series of problems such as thermal expansion, thermal stress, and reduced reliability of operating accuracy. Current thermal control technologies include passive and active methods. Passive methods, such as using thermal control coatings, insulation materials, and heaters, are mostly single heating or heat dissipation technologies and cannot respond to changes in ambient temperature in real time. Active methods, such as heat pipe structures based on the phase change flow of the working fluid, are arranged between structural stagnation points with high heat flux density and adjacent low-temperature regions. Because the temperature control threshold of the heat pipe matches the phase change point of the working fluid, a single heat pipe is difficult to meet the complex thermal control requirements of multiple stagnation points in a limited space.

[0003] Intelligent thermal control technology involves artificially constructing structures that specifically influence the heat transfer process and coupling them with materials of varying thermal conductivity. The resulting thermal metamaterials can actively alter surface heat distribution to adapt to different thermal control requirements. For example, thermal metamaterials designed using the coordinate transformation method bend the heat flow path around the core region by altering the thermal conductivity and arrangement of the medium; thermal metamaterials designed using the scattering destructive method achieve thermal shielding in the core region by constructing a ring or shell structure with a thermal conductivity close to zero. All of these thermal control technologies rely on steady-state heat conduction to achieve thermal protection of the core region. However, when the thermal control requirements of the same device differ at different stages, the control range is narrow, flexibility is low, and the extremely anisotropic materials required for fabricating intelligent thermal control devices are difficult to obtain directly from nature, resulting in high fabrication costs. Furthermore, once fabricated, these devices can only be applied to specific applications. Summary of the Invention

[0004] In order to overcome the shortcomings of the prior art, the present invention aims to provide a thermal conduction path logic control system and method based on thermal diodes, which utilizes structured external field to dynamically control the thermal conductivity of the thermal conduction path in thermal diodes, with a wide control range and high flexibility, and can meet the different thermal control requirements of different devices or the same device at different stages.

[0005] To achieve the above objectives, the present invention provides a thermal conduction path logic control system based on thermal diodes, comprising a structured external field and thermal diodes, wherein the thermal diodes include forward thermal diodes and / or reverse thermal diodes; the forward and reverse thermal diodes have the same structure but different contact surfaces with the target object under operating conditions, including a mold, a logic flow channel, and a functional fluid; the functional fluid is filled within the logic flow channel; a boss is provided on one side of the mold, and a through branch groove is formed in the mold; the logic flow channel includes a central branch fluid reservoir chamber, a central branch flow channel, a working chamber, an edge branch flow channel, and an edge branch fluid reservoir chamber connected in sequence, and the working chamber is located within the branch groove; the forward thermal diode is used to implement AND-f logic, and the reverse thermal diode is used to implement AND-r logic, jointly implementing OR logic; the forward thermal diode AND-f logic controls the heat conduction path, and the boundary value of the temperature range formed at the heat flow output surface is always greater than the boundary value of the temperature range formed by the reverse thermal diode AND-r logic; the structured external field is used to control the flow direction of the functional fluid within the logic flow channel.

[0006] Furthermore, the working chamber is provided with branched peaks, the shape of which is the same as the shape of the branched grooves.

[0007] Furthermore, the storage volume of the central branch fluid reservoir is equal to the maximum fluid volume V required for the functional fluid to operate in the central branch of the working chamber. C The storage volume of the edge-branched fluid reservoir is equal to the maximum fluid volume V required for the functional fluid to run along the edge branches of the working chamber. M .

[0008] Furthermore, both the central branched fluid reservoir and the peripheral branched fluid reservoir are provided with capillary injection holes.

[0009] Furthermore, the functional fluid is a mixture of a high thermal conductivity fluid matrix and a functional filler.

[0010] Furthermore, the branching trench includes edge branches and central branches connected to the edge branches.

[0011] Furthermore, the value range of the boss height h is: 0≤h<HR-Lc, where H is the total height of the mold without the boss, R is the basic circle radius of the branch groove, and Lc is the branch length of the branch groove, with the lengths of the edge branches and the center branches being equal.

[0012] Furthermore, the width w of the boss has the following range: 0 ≤ w < W, where W is the total width of the mold.

[0013] Furthermore, the material of the logic flow channel is the same as the material of the mold.

[0014] A method for controlling the heat conduction path logic based on a thermal diode, and based on the aforementioned heat conduction path logic control system, includes the following steps:

[0015] Step 1: Arrange thermal diodes on the surface of the heat-generating device;

[0016] Step 2: Use structured external fields to control the logic of heat conduction paths:

[0017] 1) When the heat-generating device needs to dissipate heat, a structured external field is applied for regulation, and the functional fluid located in the central branch fluid reservoir and the edge branch fluid reservoir respectively is introduced into the working chamber, so as to enhance the heat dissipation effect of the forward thermal diode and weaken the heat insulation effect of the reverse thermal diode.

[0018] 2) When the heating device needs heat insulation, a structured external field is applied for regulation, and the functional fluid located in the working chamber is introduced into the central branch fluid reservoir and the edge branch fluid reservoir respectively, so that the heat dissipation effect of the forward thermal diode is weakened and the heat insulation effect of the reverse thermal diode is enhanced.

[0019] Compared with the prior art, the present invention has at least the following beneficial technical effects:

[0020] The AND gate logic of forward and reverse thermal diodes differs. Under structured external field control, forward thermal diodes are used to implement AND-f, while reverse thermal diodes are used to implement AND-r. Both forward and reverse thermal diodes are used collaboratively to implement OR. The AND-f logic of a forward thermal diode controls the heat conduction path, and the boundary value of the temperature range formed at the heat flow output surface is always greater than the boundary value of the temperature range formed by the AND-r logic of a reverse thermal diode. In other words, forward thermal diodes are beneficial for heat dissipation in normal temperature environments, while reverse thermal diodes are beneficial for heat insulation in high-temperature environments. There is always a difference in heat transfer between forward and reverse thermal diodes.

[0021] When the surface temperature of the heating device is 80℃ and the ambient temperature is 20℃, the maximum difference between the boundary values ​​of the temperature range is 16.48℃, and the widest temperature control range is [20.06℃, 49.76℃]. Unlike traditional external field control methods that involve ordered / disordered arrangement of functional fillers, this invention combines a structured external field with a thermal diode to provide a dynamic, continuous, lossless, reversible, and wide-range logical control method for heat conduction paths. In the absence of a structured external field, the thermal diode acts as a unidirectional heat transfer device. When side A of the mold contacts the heat-generating component, the thermal diode operates in the forward direction (thermal conduction), and when side B of the mold contacts the heat-generating component, the thermal diode operates in the reverse direction (thermal insulation). That is, by changing the contact surface between the thermal diode and the object, two heat conduction paths can be switched. When a structured external field is applied, the forward and reverse thermal diodes control the flow of functional fluid in the working chamber through different NAND gate logic, so that the heat flow output surface forms a continuously changing heat distribution, such as ultra-high temperature strong thermal insulation, relatively high temperature general thermal insulation, and room temperature heat dissipation, which can meet the different thermal control requirements of multiple devices in complex temperature scenarios.

[0022] In this invention, the forward and reverse thermal diodes serve as implementation units for logic NAND gate control. Different numbers of units can be arrayed according to the structural size of different targets, resulting in strong system scalability.

[0023] In this invention, the structured external field lossless control function fluid achieves reversible operation in the logic channel, and the system generates no additional energy consumption during operation, and will not cause additional interference to the thermal control of the device.

[0024] Furthermore, the material of the logic channel is consistent with that of the mold, which is conducive to symmetrical heat transport at the logic channel / mold interface and asymmetrical heat transport at the logic channel / high thermal conductivity fluid matrix interface. The wall thickness δ is the thinnest wall thickness that can be processed. The thinner the wall thickness δ, the larger the volume fraction of functional fluid that can be filled in the logic channel of the same volume, and the greater the difference in forward / reverse heat transfer of the thermal diode. That is, the greater the difference in the temperature range boundary value formed by the forward thermal diode and the reverse thermal diode and the gate logic, the wider the temperature control range. Attached Figure Description

[0025] Figure 1 It is based on AND-f logic using a forward thermal diode;

[0026] Figure 2 It is based on AND-r logic using a reverse thermal diode;

[0027] Figure 3 This is a schematic diagram of the working principle of a logic NAND gate based on forward and reverse thermal diodes;

[0028] Figure 4 It is an XY cross-sectional view of the central branched fluid storage chamber, the central branched flow channel, and the working chamber;

[0029] Figure 5 It is an XY cross-sectional view of the edge branch fluid reservoir, edge branch flow channel, and working chamber;

[0030] Figure 6 This is the XZ cross-sectional view of the working chamber;

[0031] Figure 7a This is a schematic diagram of a circuit board based on forced convection by a fan;

[0032] Figure 7b This is a schematic diagram of a logic control method for the heat conduction path of a circuit board based on thermal diodes;

[0033] Figure 7c This is a simulation demonstration result of a specific embodiment of the thermal conduction path logic control method based on thermal diodes.

[0034] In the attached diagram: 1. Mold; 2. Central branch fluid reservoir; 3. Central branch flow channel; 4. Working chamber; 5. Edge branch flow channel; 6. Edge branch fluid reservoir; 7. Structured external field; 8. High thermal conductivity fluid matrix; 9. Functional filler; 11. Boss; 12. Branch groove; 121. Edge branch; 122. Central branch. Detailed Implementation

[0035] To make the objectives and technical solutions of this invention clearer and easier to understand, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. The specific embodiments described herein are for illustrative purposes only and are not intended to limit the invention.

[0036] A thermal conduction path logic control system based on thermal diodes includes a forward thermal diode, a reverse thermal diode, and a structured external field 7. The forward and reverse thermal diodes have identical structures, including a mold 1, a logic channel, and a functional fluid. The logic channel includes a central branch fluid reservoir 2, a central branch channel 3, a working chamber 4, an edge branch channel 5, and an edge branch fluid reservoir 6, connected sequentially. The functional fluid includes a high thermal conductivity fluid matrix 8 and a functional filler 9. The working chamber 4 of the logic channel is embedded in the branch grooves 12 of the mold 1, and the branch peaks of the working chamber 4 and the branch grooves 12 of the mold 1 have a closely complementary structure. One end of the central branch channel 3 is connected to the central branch fluid reservoir 2, and the other end is connected to the first end of the working chamber 4. One end of the edge branch channel 5 is connected to the second end of the working chamber 4, and the other end is connected to the edge branch fluid reservoir 6. Initially, the functional fluid fills the central branch fluid reservoir 2 and the edge branch fluid reservoir 6 of the logic channel. The material of mold 1, the morphology of branch groove 12, the basic circle radius R and branch length Lc of branch groove, and the number of branch grooves are described in patent CN114900072A; the material of the logic channel is the same as that of the mold, and the wall thickness δ is the thinnest wall thickness that can be processed.

[0037] The mold 1 has a through branching groove 12, which includes an edge branch 121 and a central branch 122 that communicates with and is located above the edge branch. A boss 11 is provided on one side of the mold 1. The storage volume of the central branch fluid reservoir 2 is denoted as V. C The storage volume of the edge-branched fluid reservoir 6 is denoted as V. M The storage volume of working chamber 4 is denoted as V. W V C +V M =V W The central branch fluid reservoir 2 and the edge branch fluid reservoir 6 are respectively provided with capillary injection holes, and the functional fluid is pre-injected into the two reservoirs before the logic flow channel starts working; the central branch flow channel 3 and the edge branch flow channel 5 provide a bridge for the logical flow of functional fluid between the reservoir and the working chamber 4.

[0038] The height h and width w of the boss 11, as well as the flow rate V of the functional fluid in the working chamber 4, directly affect the temperature range formed by the heat conduction path of the forward / reverse thermal diode and NOT gate logic control. The higher the height h of the boss 11 and the greater the flow rate V of the functional fluid in the working chamber 4, the more obvious the boundary value difference of the temperature range formed by the forward thermal diode and the reverse thermal diode and AND gate logic, and the wider the temperature range amplitude of the NOT gate logic. The narrower the width w of the boss 11, the greater the boundary value difference of the temperature range formed by the forward / reverse thermal diode and AND gate logic, and the greater the temperature range amplitude of the NOT gate logic, both initially increase and then decrease. The value range of the height h of the boss 11 is: 0 ≤ h < HR-Lc, where H is the total height of the mold 1 without the boss 11; the value range of the width w of the boss 11 is: 0 ≤ w < W, where W is the total width of the mold 1; the greater the flow rate V, i.e., V / (V W The closer to 100%, the more pronounced the boundary value difference between the temperature ranges formed by the forward and reverse thermal diodes and the gate logic becomes, i.e., (T out 0-T out 1) (T) out 4-T out The larger the value of 5), the wider the temperature range amplitude of the NOT gate logic, i.e., (T out 4-T out The larger the value of 1), the better.

[0039] The thermal conductivity of the high thermal conductivity fluid matrix 8 is greater than that of the mold 1. Simultaneously, the high thermal conductivity fluid matrix 8 reduces the movement resistance of the functional filler 9 and does not separate from it during flow. It includes, but is not limited to, polyvinyl alcohol solution, liquid metal, or a mixture of liquid metal and acid / alkali solution. The functional filler 9 responds to the regulation of the structured external field and drives the flow of the high thermal conductivity fluid matrix 8. It includes, but is not limited to, neodymium iron boron particles and borax, micron-sized iron / nickel particles, etc. The structured external field 7 includes, but is not limited to, magnetic fields, electric fields, etc. The mass fraction of the functional filler 9 is less than 10% of the high thermal conductivity fluid matrix 8. The materials used to prepare the thermal diode can be directly obtained from natural materials, resulting in low preparation cost and high cost-effectiveness.

[0040] Figure 1 This is an AND-f logic gate based on a forward-biased thermal diode. When the forward-biased thermal diode is placed on the target surface, the heat generated by the target passes perpendicularly through the bossless surface of mold 1 (denoted as surface 1-A) and surface 4-A of the working chamber 4 (which is on the same plane as 1-A). The AND gate logic means that the heat transfer direction of a single thermal diode is determined (forward remains forward, reverse remains reverse) or multiple thermal diodes have the same heat transfer direction (all remain forward or all remain reverse). The two functional fluids in the central branch fluid reservoir 2 and the edge branch fluid reservoir 6 merge and separate within the working chamber 4.

[0041] The forward thermal diode AND gate logic AND-f controls the merging of the two functional fluids in the edge branch fluid reservoir 6 and the central branch fluid reservoir 2 in the working chamber 4, with the functional fluid in the edge branch fluid reservoir 6 running first and the functional fluid in the central branch fluid reservoir 2 running later. The reverse thermal diode AND gate logic AND-r controls the merging of the two functional fluids in the edge branch fluid reservoir 6 and the central branch fluid reservoir 2 in the working chamber 4, with the functional fluid in the central branch fluid reservoir 2 running first and the functional fluid in the edge branch fluid reservoir 6 running later. The merging of the two functional fluids in the edge branch fluid reservoir 6 and the central branch fluid reservoir 2 in the working chamber 4 causes the temperature formed by the heat flow at the output surface to continuously increase, and the separation of the two functional fluids in the edge branch fluid reservoir 6 and the central branch fluid reservoir 2 in the working chamber 4 causes the temperature formed by the heat flow at the output surface to continuously decrease, and the separation operation sequence is the reverse of the merging.

[0042] When there is no functional fluid in the working chamber 4, the temperature output from surface 1-B of mold 1 is T. out 0; When the structured external field 7 guides the functional fluid in the edge branch fluid reservoir 6 through the edge branch flow channel 5 to the working chamber 4 and fills the edge branch, the temperature output from surface 1-B is T. out 2; When the structured external field 7 guides the functional fluid in the central branch fluid reservoir 2 through the central branch flow channel 3 and fills the working chamber 4, the flow rate of the functional fluid in the forward thermal diode working chamber 4 reaches its maximum value, and the temperature output from surface 1-B is T. out 4; Because the greater the flow rate V of the functional fluid in the working chamber 4, the higher the output temperature of surface 1-B of the mold 1, therefore T out 0 <T out 2 <T out 4.

[0043] Figure 2 This is an AND-r logic gate based on a reverse thermal diode. When the reverse thermal diode is placed on the target surface, the heat generated by the target passes perpendicularly through the bossed surface of mold 1 (denoted as surface 1-B). When there is no functional fluid in the working chamber 4, the temperature output from surface 4-A is T. out 1; When the structured external field 7 guides the functional fluid in the central branch fluid reservoir 2 through the central branch flow channel 3 to the working chamber 4 and fills the central branch, the temperature output from surface 4-A is T. out 3; When the structured external field 7 guides the functional fluid in the edge branch fluid reservoir 6 through the edge branch flow channel 5 and fills the working chamber 4, the flow rate of the functional fluid in the reverse thermal diode working chamber 4 reaches its maximum value, and the output temperature is T. out 5; T out 1 <T out 3 <Tout 5.

[0044] Figure 3 This is a schematic diagram of the NAND gate logic based on forward and reverse thermal diodes. Working chamber 4 is denoted as W, edge branch fluid reservoir 6 as M, and central branch fluid reservoir 2 as C. For the forward thermal diode, heat flows from the functional fluid to mold 1, and the scattering rate of the hot carriers in the functional fluid at the branch trench interface is τ1. For the reverse thermal diode, heat flows from mold 1 to the functional fluid, and the scattering rate of the hot carriers in the functional fluid at the branch trench interface is τ2. Since the thermal conductivity is inversely proportional to τ... 1 / 2 And τ1 < τ2, therefore the thermal conductivity of the forward thermal diode is greater than that of the reverse thermal diode, and the temperature T of the heat flow output surface is greater. out 0>T out 1, T out 2>T out 3, T out 4>T out 5, i.e., T out 0 is always greater than T out 1, T out 2 is always greater than T out 3, T out 4 is always greater than T out 5; Based on the forward thermal diode AND gate logic AND-f control of the heat conduction path, the temperature range formed at the heat flow output surface is [T out 0,T out 4]; Based on the reverse diode AND gate logic AND-r control of the heat conduction path, the temperature range formed at the heat flow output surface is [T out 1,T out 5]; Based on the control of the heat conduction path by the logic NOT gate (OR) of the forward and reverse thermal diodes, the temperature range formed at the heat flow output surface is [T out 1,T out 4).

[0045] Figure 4 The diagram shows the XY cross-sections of the central branched fluid reservoir, the central branched flow channel, and the working chamber. In the initial state, the functional packing 9 is uniformly dispersed in the high thermal conductivity fluid matrix 8 to form a functional fluid, which then fills the central branched fluid reservoir 2.

[0046] Figure 5 The diagram shows the XY cross-sections of the edge branch fluid reservoir, edge branch flow channel, and working chamber. In the initial state, the functional packing 9 is uniformly dispersed in the high thermal conductivity fluid matrix 8 to form a functional fluid, which then fills the edge branch fluid reservoir 6.

[0047] refer to Figure 6XZ cross-sectional view of the working chamber. The working chamber 4 is initially unfilled with functional fluid.

[0048] A method for controlling the heat conduction path logic based on thermal diodes includes the following steps:

[0049] Step 1: Arrange thermal diodes on the surface of the heat-generating device. The number of thermal diode arrays is related to the structural size of the device, and the initial arrangement direction of the thermal diodes is related to the main operating environment of the device.

[0050] 1) When the same device has different thermal control requirements at different stages:

[0051] When the main operating environment of the heat-generating device is normal temperature, in the initial state, the A-side of the forward thermal diode is in contact with the surface of the heat-generating device. Without structured external field control, the forward thermal diode is beneficial for heat dissipation of the device.

[0052] When the main operating environment of the heating device is a high-temperature environment, the forward thermal diode is reversed so that the B side is in contact with the surface of the heating device. When there is no structured external field 7 control, the reverse thermal diode is beneficial to the heat insulation of the device. The specific temperature value depends on the amount of functional fluid V flowing in the logic channel working chamber 4.

[0053] 2) When the thermal control requirements of the same device remain unchanged at different stages, the thermal diode does not need to be reversed.

[0054] 3) When one type of diode cannot meet the thermal control requirements of the same device, forward diodes and reverse diodes are arranged on the same surface of the device.

[0055] Step 2: Use structured external field control as needed:

[0056] 1) When the heat-generating device needs heat dissipation, a structured external field 7 is applied to control the flow of functional fluids from the central branch fluid reservoir 2 and the edge branch fluid reservoir 6 into the working chamber 4, thereby enhancing the heat dissipation effect of the forward thermal diode (i.e., the surface temperature can be reduced from T). out 0 increased to T out 4) The thermal insulation effect of the reverse thermal diode is weakened (i.e., the surface temperature can drop from T...). out 1 increased to T out 5) The highest surface temperature of the heating element reaches T out 4.

[0057] 2) When the heating device requires heat insulation, a structured external field 7 is applied to control the flow of functional fluid from the working chamber 4 into the central branch fluid reservoir 2 and the edge branch fluid reservoir 6, respectively. This reduces the heat dissipation effect of the forward thermal diode (i.e., the surface temperature can be reduced from T). out 4 reduced to T out0), the reverse thermal diode's heat insulation effect is enhanced (i.e., the surface temperature can be reduced from T). out 5 reduced to T out 1) The lowest surface temperature of the heating element reaches T out 1.

[0058] Example 1

[0059] Reference Figures 7a-7c The simulation results of a specific embodiment of the heat conduction path logic control method based on thermal diodes are shown in the figure. When a heat-generating element (such as a resistor) in the circuit raises the temperature of the circuit board to T... IC And T IC Slightly exceeding the extreme operating temperature T of component three IC3 It far exceeds the extreme operating temperature T of component one and component two. IC1 and T IC2 That is, T IC >T IC3 >>T IC2 >T IC1 If forced convection is used with a fan ( Figure 7a The circuit board temperature T IC Reduced to T IC2 The following points indicate that not only does component three involve additional power consumption waste, but T... IC2 Temperatures far below the normal operating temperature range of component three can also trigger issues such as overcooling protection for component three.

[0060] This embodiment ( Figure 7b A logic control method based on the thermal conduction path of thermal diodes is used. According to the different operating temperature requirements of different components, a reverse thermal diode is arranged on the surface of component one, a forward thermal diode on the surface of component two, and a logic NAND gate control unit consisting of one forward thermal diode and one reverse thermal diode is arranged on the surface of component three. In the absence of a structured external field, the reverse thermal diode can reduce the temperature of component one to T. out 1(T out 1 = T IC1 The forward-biased thermal diode can reduce the temperature of component two to T. out 0(T out 0 = T IC2 When a structured external field is applied, a single reverse thermal diode performs AND-r logic to regulate the temperature of component three by an amplitude of [T]. out 1,T out 5], the temperature control amplitude of a single forward thermal diode performing AND-f logic on component three is [T]. out 0,T out4], a logic AND gate control unit composed of a single forward diode and a single reverse thermal diode jointly executes the NOT gate logic (OR), and its temperature control amplitude for component three is [T]. out 1,T out 4]. NOT gate logic refers to the fact that at least two of the multiple (≥2) thermal diodes have different heat transfer directions (≥1 keeps forward and ≥1 keeps reverse), and the two functional fluids in the central branch fluid reservoir (2) and the edge branch fluid reservoir (6) merge and separate in the working chamber (4).

[0061] The simulation results for this embodiment are shown below. Figure 7c The dimensions of the thermal diode mold 1 are 24×24×12mm (length×width×height). 3 The boss height h is 2.25mm, the width w is 9mm, the wall thickness δ of the logic channel is 0.8mm, and the inner diameter of the central branch fluid reservoir 2 and the edge branch fluid reservoir 6 is 15.74mm. When the circuit board temperature reaches 80℃, the simulation measurement T... out 1 = 20.06℃, T out At 0 = 21.26℃, the temperature control amplitudes of AND-r and AND-f are [20.06℃, 33.28℃] and [21.26℃, 49.76℃], respectively, and the temperature control amplitude of the forward / reverse thermal diode NOT gate logic OR is [20.06℃, 49.76℃]. This embodiment ensures the normal operation of components one and two with similar extreme operating temperatures, while also providing a wide temperature control range for components three with significantly different extreme temperatures. This demonstrates that the thermal diode-based heat conduction path logic control method can achieve customized thermal protection for different thermistor components.

[0062] The above content is only for illustrating the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of the claims of this invention.

Claims

1. A heat conduction path logic control system based on a thermal diode, characterized in that, Includes a structured external field (7) and a thermal diode, the thermal diode including a forward thermal diode and / or a reverse thermal diode; The forward and reverse thermal diodes have the same structure, but their contact surfaces with the target object are different under the working state. The diodes include a mold (1), a logic channel, and a functional fluid. The functional fluid is filled in the logic channel. The mold (1) has a boss (11) on one side and a through branch groove (12) in the mold (1); the logic flow channel includes a central branch fluid storage chamber (2), a central branch flow channel (3), a working chamber (4), an edge branch flow channel (5) and an edge branch fluid storage chamber (6) connected in sequence, and the working chamber (4) is located in the branch groove (12); The forward thermal diode is used to implement AND-f logic, and the reverse thermal diode is used to implement AND-r logic, which together implement NOT logic. AND logic means that the heat transfer direction of a single thermal diode is determined or that the heat transfer direction of multiple thermal diodes is the same. NOT logic means that at least two of the multiple thermal diodes have different heat transfer directions. The forward thermal diode AND gate logic AND-f controls the heat conduction path, and the boundary value of the temperature range formed at the heat flow output surface is always greater than the boundary value of the temperature range formed by the reverse thermal diode AND gate logic AND-r. The structured external field (7) is used to control the flow direction of the functional fluid within the logic channel.

2. The thermal conduction path logic control system based on a thermal diode according to claim 1, characterized in that, The working chamber (4) is provided with branched peaks, and the shape of the branched peaks is the same as that of the branched grooves (12).

3. The thermal conduction path logic control system based on a thermal diode according to claim 1, characterized in that, The storage volume of the central branch fluid reservoir (2) is equal to the maximum fluid volume required for the functional fluid to operate in the central branch of the working chamber (4). V C The storage volume of the edge-branched fluid reservoir (6) is equal to the maximum fluid volume required for the functional fluid to run in the edge branch of the working chamber (4). V M .

4. The thermal conduction path logic control system based on a thermal diode according to claim 1, characterized in that, The central branch fluid reservoir (2) and the edge branch fluid reservoir (6) are respectively provided with capillary injection holes.

5. The thermal conduction path logic control system based on a thermal diode according to claim 1, characterized in that, The functional fluid is a mixture of a high thermal conductivity fluid matrix (8) and a functional filler (9).

6. The thermal conduction path logic control system based on a thermal diode according to claim 1, characterized in that, The branching trench (12) includes edge branches and central branches connected to the edge branches.

7. A thermal conduction path logic control system based on a thermal diode according to claim 6, characterized in that, The value range of the height h of the boss (11) is: 0≤h<HR-Lc, where H is the total height of the mold (1) without the boss (11), R is the basic circle radius of the branch groove, Lc is the branch length of the branch groove, and the lengths of the edge branches and the center branches are equal.

8. The thermal conduction path logic control system based on a thermal diode according to claim 1, characterized in that, The width w of the boss (11) is in the range of 0≤w<W, where W is the total width of the mold.

9. The thermal conduction path logic control system based on a thermal diode according to claim 1, characterized in that, The material of the logic flow channel is the same as that of the mold (1).

10. A method for controlling the heat conduction path logic based on a thermal diode, characterized in that, The heat conduction path logic control system according to claim 1 includes the following steps: Step 1: Arrange thermal diodes on the surface of the heat-generating device; Step 2: Use structured external field (7) to perform logical control of heat conduction path: 1) When the heat-generating device needs to dissipate heat, a structured external field (7) is applied for regulation, and the functional fluids located in the central branch fluid reservoir (2) and the edge branch fluid reservoir (6) are introduced into the working chamber (4) to enhance the heat dissipation effect of the forward thermal diode and weaken the heat insulation effect of the reverse thermal diode. 2) When the heat-generating device needs heat insulation, a structured external field (7) is applied for regulation, and the functional fluid located in the working chamber (4) is introduced into the central branch fluid storage chamber (2) and the edge branch fluid storage chamber (6) respectively, so that the heat dissipation effect of the forward thermal diode is weakened and the heat insulation effect of the reverse thermal diode is enhanced.

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