A method and system for predicting the yield of organic target sputtering using Hall plasma.

Abstract

This invention provides a method and system for predicting the sputtering yield of organic targets using Hall plasma, comprising: a target molecule or molecular cluster prediction step: when the incident ion energy reaches the sputtering threshold that disrupts van der Waals interactions, calculating the sputtering yield of sputtered molecules or molecular clusters, and predicting the motion state of the sputtered products as molecules or molecular clusters; and a bond-breaking product prediction step: classifying the types of bond-breaking products of target molecules, setting a sputtering threshold corresponding to each type of product, and when the incident ion energy reaches the sputtering threshold corresponding to each type of product, calculating the sputtering yield of the bond-breaking products, and predicting the motion state of the sputtered products as bond-breaking products. This invention provides a method for predicting the sputtering yield of organic targets using Hall plasma, which can predict the surface sputtering degree of organic targets in contact with Hall plasma, the types of sputtered products are consistent with experimental detection data, and the sputtering yield calculation error can be within 20%.

Description

Technical Field

[0001] This invention relates to the field of computing technology, and more specifically, to a method and system for sputtering organic targets using Hall plasma. Background Technology

[0002] Hall thrusters are currently the most widely used space propulsion devices in orbit. They utilize plasma to generate thrust, and their jet plume is a high-density, low-energy plasma that can cause severe sputtering and abrasion on the surfaces of sensitive components on spacecraft, leading to damage to these components. Generally, sputtering damage to inorganic surfaces by Hall plumes is frequently reported; for example, sputtering of antenna surfaces weakens their signal transmission or reception capabilities, or sputtering of solar panel glass surfaces reduces their light transmittance. However, recent experiments have shown that sputtering of some organic surfaces on spacecraft by Hall plumes also has significant negative effects. For instance, sputtering through wire insulation can cause it to lose its insulation capacity, and sputtering of polyimide films can reduce their resistance to radiation and proton oxygen. These sputtering problems are all potential hazards that seriously threaten the safe operation of satellites in orbit.

[0003] To date, the most common models for predicting the sputtering yield of Hall plasma on inorganic walls are mainly the following three: The literature "Y. Yamamura, et al. Energy dependence of ion-induced sputtering yields from monatomic solids at normal incidence. Atomic Data and Nuclear Data Tables, 62, 1996" studies the sputtering yield of plasma on metallic solid walls using a numerical model; the literature "J. Yim. Computational modeling of Hall thruster channel wall erosion. Michigan: University of Michigan, 2008" modifies the Yamamura model and proposes a model for predicting the sputtering yield of boron nitride ceramics (Hall discharge chamber materials); the literature "M. Ranjan, et al. BN / BNSiO2 sputtering yield shape profiles under stationary plasma thruster operating conditions. AIP" Advances, 6, 2016: Using a large amount of experimental verification data, the Yamamura model was revised again, forming the most widely used Hall plasma model for predicting the yield of inorganic wall sputtering.

[0004] However, there are few reports on sputtering yield prediction models for organic target walls using Hall plasma. Furthermore, due to the significant differences in microstructure between organic and inorganic materials, it is impossible to directly use inorganic wall sputtering yield models to predict the sputtering yield of organic walls.

[0005] Therefore, there is a market need for a method and system for predicting the sputtering yield of organic targets using Hall plasma. Summary of the Invention

[0006] In view of the deficiencies in the prior art, the purpose of this invention is to provide a method and system for predicting the sputtering yield of organic targets using Hall plasma.

[0007] A method for predicting the sputtering yield of organic target materials using Hall plasma according to the present invention includes:

[0008] Prediction steps for target molecules or molecular clusters: When the incident ion energy reaches the sputtering threshold that destroys van der Waals interactions, calculate the sputtering yield of sputtered molecules or molecular clusters, and predict the motion state of the sputtered products as molecules or molecular clusters.

[0009] Bond-breaking product prediction steps: Classify the bond-breaking products of the target material molecules and set the sputtering threshold corresponding to each type of product. When the incident ion energy reaches the sputtering threshold corresponding to each type of product, calculate the sputtering yield of the bond-breaking product and predict the motion state of the sputtered product that is a bond-breaking product.

[0010] Preferably, the target molecule or molecular cluster prediction step and the bond-breaking product prediction step are independent of each other. When the incident ion energy reaches both the sputtering threshold for breaking van der Waals interactions and the sputtering threshold corresponding to each type of product, both the target molecule or molecular cluster prediction step and the bond-breaking product prediction step are triggered.

[0011] Preferably, the sputtering threshold of the van der Waals effect is denoted as the first sputtering threshold E. th1 The first sputtering threshold ranges from 0.2 to 0.3 eV;

[0012] The sputtering threshold corresponding to each type of product is denoted as the second sputtering threshold E. th2,i The second sputtering threshold has i different values, where i represents the type of chemical bond broken by sputtering.

[0013] Preferably, calculating the sputtering yield of sputtered molecules or molecular clusters includes the following sub-steps:

[0014] Step S1: Calculate the first sputtering angle coefficient. The calculation formula is as follows:

[0015]

[0016] Where β1 represents the first sputtering angle coefficient, c represents the coefficient related to the molecular structure of the target material, and θ represents the ion incident angle;

[0017] Step S2: Calculate the sputtering yield of target molecules or molecular clusters based on the first sputtering angle coefficient. The calculation formula is as follows:

[0018]

[0019] Where Y1 represents the sputtering yield of target molecules or molecular clusters, s m s represents the blocking cross section of the target material molecules. e E represents the blocking cross section for electrons. th1 denoted by , where represents the first sputtering threshold, and E represents the ion incident energy.

[0020] Preferably, the bond-breaking product refers to a residual structure after the target material molecules have broken bonds. Calculating the sputtering yield of the bond-breaking product includes the following sub-steps:

[0021] Step A: Calculate the second sputtering angle coefficient. The calculation formula is as follows:

[0022]

[0023] Where, β 2,i This represents the second type of sputtering angle coefficient for the i-th bond-breaking product, θ represents the ion incident angle, and s r s represents the blocking section of the bond-breaking product. m This represents the blocking cross section of the target material molecules.

[0024] Step B: Calculate the sputtering yield of the bond-breaking product based on the second sputtering angle coefficient. The calculation formula is as follows:

[0025]

[0026] Among them, Y 2,i T represents the sputtering yield of the i-th bond-breaking product. w Indicates surface temperature, s e L represents the blocking cross section for electrons. b E represents the bond length of the i-th type of chemical bond. th2,i denoted by , where represents the second sputtering threshold of the i-th bond-breaking product, and E represents the ion incident energy.

[0027] A Hall plasma-based system for predicting the sputtering yield of organic targets, according to the present invention, comprises:

[0028] Target material molecule or molecular cluster prediction module: When the incident ion energy reaches the sputtering threshold that destroys van der Waals interactions, calculate the sputtering yield of sputtered molecules or molecular clusters, and predict the motion state of sputtered products as molecules or molecular clusters.

[0029] Bond-breaking product prediction module: Classify the bond-breaking products of target molecules and set the sputtering threshold corresponding to each type of product. When the incident ion energy reaches the sputtering threshold corresponding to each type of product, calculate the sputtering yield of the bond-breaking product and predict the motion state of the sputtered product that is a bond-breaking product.

[0030] Preferably, the target molecule or molecular cluster prediction module and the bond-breaking product prediction module are independent of each other. When the incident ion energy reaches both the sputtering threshold for disrupting van der Waals interactions and the sputtering threshold corresponding to each type of product, both the target molecule or molecular cluster prediction module and the bond-breaking product prediction module are triggered.

[0031] Preferably, the sputtering threshold of the van der Waals effect is denoted as the first sputtering threshold E. th1The first sputtering threshold ranges from 0.2 to 0.3 eV;

[0032] The sputtering threshold corresponding to each type of product is denoted as the second sputtering threshold E. th2,i The second sputtering threshold has i different values, where i represents the type of chemical bond broken by sputtering.

[0033] Preferably, calculating the sputtering yield of sputtered molecules or molecular clusters includes the following sub-modules:

[0034] Module M1: Calculates the first sputtering angle coefficient, using the following formula:

[0035]

[0036] Where β1 represents the first sputtering angle coefficient, c represents the coefficient related to the molecular structure of the target material, and θ represents the ion incident angle;

[0037] Module M2: Based on the first sputtering angle coefficient, calculate the sputtering yield of target molecules or molecular clusters using the following formula:

[0038]

[0039] Where Y1 represents the sputtering yield of target molecules or molecular clusters, s m s represents the blocking cross section of the target material molecules. e E represents the blocking cross section for electrons. th1 denoted by , where represents the first sputtering threshold, and E represents the ion incident energy.

[0040] Preferably, the bond-breaking product refers to a residual structure after the target molecule has broken bonds. Calculating the sputtering yield of the bond-breaking product includes the following sub-modules:

[0041] Module A: Calculate the second sputtering angle coefficient. The calculation formula is as follows:

[0042]

[0043] Where, β 2,i This represents the second type of sputtering angle coefficient for the i-th bond-breaking product, θ represents the ion incident angle, and s r s represents the blocking section of the bond-breaking product. m Indicates the blocking cross section of the target material molecules;

[0044] Module B: Calculate the sputtering yield of the bond-breaking product based on the second sputtering angle coefficient. The calculation formula is as follows:

[0045]

[0046] Among them, Y 2,iT represents the sputtering yield of the i-th bond-breaking product. w Indicates surface temperature, s e L represents the blocking cross section for electrons. b E represents the bond length of the i-th type of chemical bond. th2,i denoted by , where represents the second sputtering threshold of the i-th bond-breaking product, and E represents the ion incident energy.

[0047] Compared with the prior art, the present invention has the following beneficial effects:

[0048] 1. This invention provides a method for predicting the sputtering yield of organic targets by Hall plasma. It can predict the sputtering degree of the surface of all organic targets in contact with Hall plasma, and the sputtering product types are consistent with the test data. The sputtering yield calculation error can be within 20%.

[0049] 2. This invention provides input conditions for the variation of sputtering profile on the target wall, which is beneficial for researchers to carry out target life prediction and design related protective measures.

[0050] 3. The numerical method proposed in this invention can provide a reference for the prediction method of plasma sputtering on organic targets in other working conditions. Attached Figure Description

[0051] Other features, objects, and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0052] Figure 1 This is a schematic diagram of the workflow of the present invention.

[0053] Figure 2 This is an example of how the target molecule C2H5OH divides all bond-breaking products in this invention. Detailed Implementation

[0054] The present invention will now be described in detail with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the present invention, but do not limit the invention in any way. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all fall within the protection scope of the present invention.

[0055] This invention relates to the determination of two types of sputtering products: first, the sputtering product may be target molecules or molecular clusters; second, the sputtering product may be a residual structure of a target molecule after bond breakage (hereinafter referred to as bond-broken product). It should be noted that the determination of the first and second types of sputtering processes is independent of each other. In each sputtering determination process of particles on the target, target molecules or bond-broken products may be generated simultaneously by sputtering.

[0056] According to the present invention, a method for predicting the sputtering yield of organic target materials using Hall plasma is provided, such as... Figure 1 As shown, it includes:

[0057] Target molecule or cluster prediction steps: When the incident ion energy reaches the sputtering threshold that disrupts van der Waals interactions, calculate the sputtering yield of the sputtered molecules or clusters, and predict the motion state of the sputtered products as molecules or clusters. The sputtering threshold for van der Waals interactions is denoted as the first sputtering threshold E. th1 The first sputtering threshold ranges from 0.2 to 0.3 eV. When the energy of the ions incident on the target is not higher than the first sputtering threshold E... th1 At this point, it is assumed that ions cannot disrupt the van der Waals interactions between target molecules, and therefore no sputtering occurs. Calculating the sputtering yield of sputtered molecules or clusters includes the following sub-steps:

[0058] Step S1: Calculate the first sputtering angle coefficient. The calculation formula is as follows, which is obtained by fitting experimental data:

[0059]

[0060] Where β1 represents the first sputtering angle coefficient, c represents a coefficient related to the molecular structure of the target material, and θ represents the ion incident angle. For single-carbon organic compounds, c is 0.54; for two-carbon organic compounds, c is 0.59; and for three-carbon organic compounds, c is 0.62.

[0061] Step S2: Calculate the sputtering yield of target molecules or molecular clusters based on the first sputtering angle coefficient. The calculation formula is as follows:

[0062]

[0063] Where Y1 represents the sputtering yield of target molecules or molecular clusters, s m This represents the blocking cross section of the target material molecules, in units of 10. -20 m 2 s e The electron blocking cross section is represented by a unit of 10. -20 m 2 E th1 The first sputtering threshold is represented by E, which represents the ion incident energy in eV. The kinetic energy of the sputtered molecules or molecular clusters is the thermal velocity corresponding to the target wall temperature, and its direction follows a Maxwell cosine distribution.

[0064] Bond-breaking product prediction steps: Classify the target material molecules into bond-breaking product types and set a sputtering threshold for each type. When the incident ion energy reaches the sputtering threshold for each product type, calculate the sputtering yield of the bond-breaking products and predict the motion state of the sputtered products that are bond-breaking products. The sputtering threshold for each product type is denoted as the second sputtering threshold E. th2,i The second sputtering threshold has i distinct values, where i represents the type of chemical bond broken by sputtering. The bond-broken product refers to a fragmented structure of the target molecule after bond breakage. Calculating the sputtering yield of the bond-broken product includes the following sub-steps:

[0065] Step A: Calculate the second sputtering angle coefficient. The calculation formula is as follows:

[0066]

[0067] Where, β 2,i This represents the second type of sputtering angle coefficient for the i-th bond-breaking product, θ represents the ion incident angle, and s r This represents the blocking cross section of the bond-breaking products, in units of 10. -20 m 2 s m This represents the blocking cross section of the target material molecules, in units of 10. -20 m 2 ;

[0068] Step B: Calculate the sputtering yield of the bond-breaking product based on the second sputtering angle coefficient. The calculation formula is as follows:

[0069]

[0070] Among them, Y 2,i T represents the sputtering yield of the i-th bond-breaking product. w Surface temperature, expressed in Kelvin (K) and s. e The electron blocking cross section is represented by a unit of 10. -20 m 2 L b This represents the bond length of the i-th type of chemical bond, in units of 10. -12 m, E th2 ,i represents the second sputtering threshold of the i-th bond-breaking product, and E represents the ion incident energy. The sputtered atomic kinetic energy is taken as the thermal velocity corresponding to the target wall temperature, and its direction follows a Maxwell cosine distribution.

[0071] It should be noted that in each sputtering calculation, each bond-breaking product has a sputtering yield value, which is a mathematical expectation and is usually less than 1. Taking ethanol (C2H5OH) as an example... Figure 2As shown, C2H5OH has 8 chemical bonds, but only 4 types of bond-breaking products. The bond-breaking products of ①②③⑤⑥ are the same, all belonging to CH bonds. Therefore, only condition ① needs to be calculated, and its sputtering yield is multiplied by 5. Similarly, ④ belongs to C-C bonds, ⑦ belongs to CO bonds, and ⑧ belongs to OH bonds. The sputtering thresholds for each type of chemical bond are described in Table 1, as shown below:

[0072] Table 1

[0073] CC C = C C≡C CH CO 4.56 11.09 20.17 11.36 5.20 C=O CN C = N NH OH 16.48 4.54 11.00 12.43 15.75

[0074] The target molecule or molecular cluster prediction step and the bond-breaking product prediction step are independent of each other. When the incident ion energy reaches both the sputtering threshold for breaking van der Waals interactions and the sputtering threshold corresponding to each type of product, both the target molecule or molecular cluster prediction step and the bond-breaking product prediction step are triggered.

[0075] This invention includes sputtering yield calculations based on ion-induced van der Waals disruption (i.e., the first sputtering assessment) and sputtering yield calculations based on ion-induced breakage of individual chemical bonds (i.e., the second sputtering assessment). The sputtering yield calculations for target molecules or molecular clusters and individual bond-breaking products are independent of each other. The first sputtering calculation considers the effects of ion incident angle and stop section, while the second sputtering calculation considers the effects of wall temperature, chemical bond length, ion incident angle, and stop section. It is applicable to the prediction of sputtering abrasion of organic surfaces by Hall thruster plumes in on-orbit or other vacuum environments. The plasma-organic target sputtering yield prediction performed under conditions with ion energies in the range of 0–1000 eV described in this invention has high accuracy.

[0076] The present invention also provides a Hall plasma prediction system for sputtering yield of organic targets. The Hall plasma prediction system for sputtering yield of organic targets can be implemented by triggering the process steps of the Hall plasma prediction method for sputtering yield of organic targets. That is, those skilled in the art can understand the Hall plasma prediction method for sputtering yield of organic targets as a preferred embodiment of the Hall plasma prediction system for sputtering yield of organic targets.

[0077] A Hall plasma-based system for predicting the sputtering yield of organic targets, according to the present invention, comprises:

[0078] Target molecule or cluster prediction module: When the incident ion energy reaches the sputtering threshold that disrupts van der Waals interactions, the module calculates the sputtering yield of sputtered molecules or clusters and predicts the motion state of the sputtered products as molecules or clusters. The sputtering threshold for van der Waals interactions is denoted as the first sputtering threshold E. th1 The first sputtering threshold ranges from 0.2 to 0.3 eV. Calculating the sputtering yield of sputtered molecules or molecular clusters includes the following submodules:

[0079] Module M1: Calculates the first sputtering angle coefficient, using the following formula:

[0080]

[0081] Where β1 represents the first sputtering angle coefficient, c represents the coefficient related to the molecular structure of the target material, and θ represents the ion incident angle.

[0082] Module M2: Calculates the sputtering yield of target molecules or molecular clusters based on the first sputtering angle coefficient. The calculation formula is as follows:

[0083]

[0084] Where Y1 represents the sputtering yield of target molecules or molecular clusters, s m s represents the blocking cross section of the target material molecules. e E represents the blocking cross section for electrons. th1 denoted by , where represents the first sputtering threshold, and E represents the ion incident energy.

[0085] Bond-breaking product prediction module: This module categorizes the bond-breaking products of the target molecules and sets a sputtering threshold for each type of product. When the incident ion energy reaches the sputtering threshold for each product type, it calculates the sputtering yield of the bond-breaking product and predicts the motion state of the sputtered product. The sputtering threshold for each product type is denoted as the second sputtering threshold E. th2,i The second sputtering threshold has i distinct values, where i represents the type of chemical bond broken by sputtering. The bond-broken product refers to a fragmented structure of the target molecule after bond breakage. Calculating the sputtering yield of the bond-broken product includes the following sub-modules:

[0086] Module A: Calculate the second sputtering angle coefficient. The calculation formula is as follows:

[0087]

[0088] Where, β 2,i This represents the second type of sputtering angle coefficient for the i-th bond-breaking product, θ represents the ion incident angle, and s r s represents the blocking section of the bond-breaking product. m This represents the blocking cross section of the target material molecules.

[0089] Module B: Calculate the sputtering yield of the bond-breaking product based on the second sputtering angle coefficient. The calculation formula is as follows:

[0090]

[0091] Among them, Y 2,i T represents the sputtering yield of the i-th bond-breaking product. w Indicates surface temperature, se L represents the blocking cross section for electrons. b E represents the bond length of the i-th type of chemical bond. th2,i denoted by , where represents the second sputtering threshold of the i-th bond-breaking product, and E represents the ion incident energy.

[0092] The target molecule or molecular cluster prediction module and the bond-breaking product prediction module are independent of each other. When the incident ion energy reaches both the sputtering threshold for breaking van der Waals interactions and the sputtering threshold corresponding to each type of product, both the target molecule or molecular cluster prediction module and the bond-breaking product prediction module are triggered.

[0093] Those skilled in the art will understand that, besides implementing the system and its various devices, modules, and units provided by this invention in the form of purely computer-readable program code, the same functions can be achieved entirely through logical programming of the method steps, making the system and its various devices, modules, and units of this invention function in the form of logic gates, switches, application-specific integrated circuits, programmable logic controllers, and embedded microcontrollers. Therefore, the system and its various devices, modules, and units provided by this invention can be considered as a hardware component, and the devices, modules, and units included therein for implementing various functions can also be considered as structures within the hardware component; alternatively, the devices, modules, and units for implementing various functions can be considered as both software modules implementing the method and structures within the hardware component.

[0094] Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art can make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention. Unless otherwise specified, the embodiments and features described in this application can be arbitrarily combined with each other.

Claims

1. A method for predicting the sputtering yield of organic target materials using Hall plasma, characterized in that, include: Prediction steps for target molecules or molecular clusters: When the incident ion energy reaches the sputtering threshold that destroys van der Waals interactions, calculate the sputtering yield of sputtered molecules or molecular clusters, and predict the motion state of the sputtered products as molecules or molecular clusters. Bond-breaking product prediction steps: Classify the bond-breaking products of the target molecules and set the sputtering threshold corresponding to each type of product. When the incident ion energy reaches the sputtering threshold corresponding to each type of product, calculate the sputtering yield of the bond-breaking product and predict the motion state of the sputtered product that is a bond-breaking product. Calculating the sputtering yield of sputtered molecules or molecular clusters includes the following sub-steps: Step S1: Calculate the first sputtering angle coefficient. The calculation formula is as follows: in, Indicates the first sputtering angle coefficient. This represents a coefficient related to the molecular structure of the target material. Indicates the angle of ion incidence; Step S2: Calculate the sputtering yield of target molecules or molecular clusters based on the first sputtering angle coefficient. The calculation formula is as follows: in, This indicates the sputtering yield of target molecules or molecular clusters. This represents the blocking cross section of the target material molecules. Indicates the blocking cross section for electrons. Indicates the first sputtering threshold. Indicates the incident energy of the ions; Bond-breaking products refer to a residual structure after the target material molecules have broken bonds. Calculating the sputtering yield of bond-breaking products includes the following sub-steps: Step A: Calculate the second sputtering angle coefficient. The calculation formula is as follows: in, This represents the second type of sputtering angle coefficient for the i-th bond-breaking product. Indicates the angle of ion incidence. This indicates the section that prevents the bonding products from breaking. Indicates the blocking cross section of the target material molecules; Step B: Calculate the sputtering yield of the bond-breaking product based on the second sputtering angle coefficient. The calculation formula is as follows: in, This represents the sputtering yield of the i-th bond-breaking product. Indicates surface temperature. Indicates the blocking cross section for electrons. Indicates the bond length of the i-th type of chemical bond. This represents the second sputtering threshold for the i-th bond-breaking product. This represents the incident energy of the ions.

2. The method for predicting the sputtering yield of organic target materials using Hall plasma according to claim 1, characterized in that, The target molecule or molecular cluster prediction step and the bond-breaking product prediction step are independent of each other. When the incident ion energy reaches both the sputtering threshold for breaking van der Waals interactions and the sputtering threshold corresponding to each type of product, both the target molecule or molecular cluster prediction step and the bond-breaking product prediction step are triggered.

3. The method for predicting the sputtering yield of organic target materials using Hall plasma according to claim 1, characterized in that, The sputtering threshold of the van der Waals effect is denoted as the first sputtering threshold. E th1 The first sputtering threshold ranges from 0.2 to 0.3 eV; The sputtering threshold corresponding to each type of product is denoted as the second sputtering threshold. E th2, i The second sputtering threshold has i different values, where i represents the type of chemical bond broken by sputtering.

4. A Hall plasma system for predicting the sputtering yield of organic targets, characterized in that, include: Target material molecule or molecular cluster prediction module: When the incident ion energy reaches the sputtering threshold that destroys van der Waals interactions, calculate the sputtering yield of sputtered molecules or molecular clusters, and predict the motion state of sputtered products as molecules or molecular clusters. Bond-breaking product prediction module: Classify the bond-breaking products of target molecules and set the sputtering threshold corresponding to each type of product. When the incident ion energy reaches the sputtering threshold corresponding to each type of product, calculate the sputtering yield of the bond-breaking product and predict the motion state of the sputtered product that is a bond-breaking product. The calculation of sputtering yield for sputtered molecules or molecular clusters includes the following sub-modules: Module M1: Calculates the first sputtering angle coefficient, using the following formula: in, Indicates the first sputtering angle coefficient. This represents a coefficient related to the molecular structure of the target material. Indicates the angle of ion incidence; Module M2: Based on the first sputtering angle coefficient, calculate the sputtering yield of target molecules or molecular clusters using the following formula: in, This indicates the sputtering yield of target molecules or molecular clusters. This represents the blocking cross section of the target material molecules. Indicates the blocking cross section for electrons. Indicates the first sputtering threshold. Indicates the incident energy of the ions; Bond-breaking products refer to a residual structure after the target material molecules have broken bonds. Calculating the sputtering yield of bond-breaking products includes the following sub-modules: Module A: Calculate the second sputtering angle coefficient. The calculation formula is as follows: in, This represents the second type of sputtering angle coefficient for the i-th bond-breaking product. Indicates the angle of ion incidence. This indicates the section that prevents the bonding products from breaking. Indicates the blocking cross section of the target material molecules; Module B: Calculate the sputtering yield of the bond-breaking product based on the second sputtering angle coefficient. The calculation formula is as follows: in, This represents the sputtering yield of the i-th bond-breaking product. Indicates surface temperature. Indicates the blocking cross section for electrons. Indicates the bond length of the i-th type of chemical bond. This represents the second sputtering threshold for the i-th bond-breaking product. This represents the incident energy of the ions.

5. The Hall plasma-based system for predicting the sputtering yield of organic targets according to claim 4, characterized in that, The target molecule or molecular cluster prediction module and the bond-breaking product prediction module are independent of each other. When the incident ion energy reaches both the sputtering threshold for breaking van der Waals interactions and the sputtering threshold corresponding to each type of product, both the target molecule or molecular cluster prediction module and the bond-breaking product prediction module are triggered.

6. The Hall plasma-based system for predicting the sputtering yield of organic targets according to claim 5, characterized in that, The sputtering threshold of the van der Waals effect is denoted as the first sputtering threshold. E th1 The first sputtering threshold ranges from 0.2 to 0.3 eV; The sputtering threshold corresponding to each type of product is denoted as the second sputtering threshold. E th2, i The second sputtering threshold has i different values, where i represents the type of chemical bond broken by sputtering.

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