Gate oxide layer forming method, manufacturing system, equipment, medium and program

Abstract

The disclosed embodiments provide a method, manufacturing system, equipment, medium and program for forming a gate oxide layer. The method for forming a gate oxide layer includes: obtaining multiple sets of parameter information of a gate oxide layer on a first wafer after a first machine performs multiple oxidation treatments on a first wafer; a set of parameter information of the gate oxide layer corresponds to a single oxidation treatment of the first wafer, and each oxidation treatment corresponds to different process parameters; based on the reference parameter information, selecting target set parameter information from multiple sets of parameter information, and using the process parameters corresponding to the oxidation treatment of the target set parameter information as actual process parameters; the reference parameter information is the parameter information of the gate oxide layer on the second wafer after a second machine performs oxidation treatment on the second wafer, and the types of the first machine and the second machine are different; generating a processing signal corresponding to the actual process parameters, and performing oxidation treatment on the second wafer. The above technical solution can improve the efficiency of forming a gate oxide layer.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor manufacturing technology, and in particular, to a method for forming a gate oxide layer, a manufacturing system, equipment, medium, and program. Background Art

[0002] In the semiconductor manufacturing process, the quality of the gate oxide is crucial to the final semiconductor structure, and directly determines the electrical properties and reliability of the semiconductor structure. As the characteristic size of semiconductors becomes smaller and smaller, the thickness of the gate oxide is also getting thinner, and the thickness uniformity of the gate oxide surface is poor, and the probability of short circuit in the gate oxide also increases.

[0003] Currently, the manufacturing process of the gate oxide layer can be performed by a machine. During the manufacturing process, the machine can perform compensatory oxidation growth while performing thermal annealing on the deposited silicon dioxide film to increase the thickness of the gate oxide layer surface.

[0004] However, when such machines are occupied for a long time or fail, the efficiency of forming the gate oxide layer will be seriously affected. In this context, how to provide a technical solution to improve the efficiency of forming the gate oxide layer has become a technical problem that those skilled in the art need to solve urgently. Summary of the invention

[0005] In view of this, embodiments of the present disclosure provide a method, a manufacturing system, a device, a medium and a program for forming a gate oxide layer, which can improve the formation efficiency of the gate oxide layer.

[0006] The present disclosure provides a method for forming a gate oxide layer, comprising:

[0007] Acquiring multiple sets of parameter information of a gate oxide layer on the first wafer after the first machine performs multiple oxidation treatments on the first wafer; wherein a set of parameter information of the gate oxide layer corresponds to one oxidation treatment of the first wafer, and the process parameters corresponding to each oxidation treatment are different;

[0008] Based on the reference parameter information, target group parameter information is selected from the multiple groups of parameter information, and the process parameters corresponding to the oxidation treatment of the target group parameter information are used as actual process parameters; wherein the reference parameter information is parameter information of a gate oxide layer on a second wafer after the oxidation treatment is performed on the second wafer by a second machine, and the first machine and the second machine are of different types;

[0009] A processing signal corresponding to the actual process parameter is generated, and the processing signal is used to control the first machine to perform an oxidation process on the second wafer according to the actual process parameter.

[0010] Optionally, a set of parameter information includes at least one parameter value, and the at least one parameter value includes a thickness parameter value of a gate oxide layer;

[0011] The obtaining of multiple sets of parameter information of the gate oxide layer on the first wafer after the first machine performs multiple oxidation processes on the first wafer includes:

[0012] For any oxidation treatment of the first wafer, obtaining a thickness value of the gate oxide layer corresponding to each position point on the first wafer after the first wafer is subjected to the oxidation treatment, wherein the first wafer has a plurality of position points;

[0013] Determine the thickness difference percentage of the gate oxide layer corresponding to each position point on the first wafer according to the thickness value of the gate oxide layer corresponding to each position point on the first wafer, so as to obtain the thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage;

[0014] The thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage are used as the thickness parameter value of the gate oxide layer to obtain any set of parameter information after the first wafer is subjected to any oxidation treatment.

[0015] Optionally, the obtaining of the thickness value of the gate oxide layer corresponding to each position point on the first wafer after the first wafer is oxidized includes:

[0016] Obtaining capacitance values ​​corresponding to gate oxide layers at various positions of the first wafer when the gate oxide layers are at different voltage values; determining thickness values ​​of the gate oxide layers corresponding to various positions on the first wafer based on a plurality of voltage values ​​and corresponding capacitance values ​​of the gate oxide layers at various positions;

[0017] or,

[0018] The thickness of the gate oxide layer corresponding to each position point on the first wafer is determined according to the light intensity value and polarization form of the polarized light reflected by the gate oxide layer at each position point on the first wafer.

[0019] Optionally, the reference parameter information includes a reference thickness parameter value, and the reference thickness parameter value includes: a reference thickness value and a reference thickness difference percentage;

[0020] The selecting target group parameter information from multiple groups of parameter information based on the benchmark parameter information includes:

[0021] Selecting the maximum thickness value and the thickness difference percentage corresponding to the maximum thickness value from the multiple sets of parameter information respectively, so as to obtain multiple maximum thickness values ​​and the thickness difference percentages corresponding to the multiple maximum thickness values;

[0022] If there is a target maximum thickness value among the multiple maximum thickness values, the difference between which and the reference thickness value is within a first preset range, and the difference between the thickness difference percentage corresponding to the target maximum thickness value and the reference thickness difference percentage is within a second preset range, the parameter information of the group to which the target maximum thickness value belongs is used as the target group parameter information.

[0023] Optionally, the at least one parameter value further includes an electrical parameter value of the gate oxide layer; the reference parameter information further includes a reference electrical parameter value;

[0024] The step of selecting target group parameter information from multiple groups of parameter information based on the benchmark parameter information further includes:

[0025] Determine whether the electrical parameter value of the parameter information of the group where the target maximum thickness value belongs meets the requirement of the reference electrical parameter value;

[0026] If the conditions are met, the step of using the parameter information of the group where the target maximum thickness value belongs as the target group parameter information is executed;

[0027] If not, changing the process parameters corresponding to each oxidation treatment of the first wafer until the target set of parameter information is obtained;

[0028] The method further comprises:

[0029] After obtaining the target set of parameter information, the actual process parameters are applied to the oxidation process of the second machine.

[0030] Optionally, the electrical parameter value of the gate oxide layer includes at least one of the following:

[0031] The electrical thickness of the gate oxide layer in the accumulation region;

[0032] The electrical thickness of the gate oxide layer in the inversion region;

[0033] Breakdown voltage of gate oxide;

[0034] Gate leakage current on the gate oxide.

[0035] Optionally,

[0036] The oxidation treatment includes a dry oxidation process and a wet oxidation process; wherein, in performing the oxidation treatment process, the wet oxidation process is first performed on the first wafer or the second wafer, and then the dry oxidation process is performed on the first wafer or the second wafer;

[0037] The parameter information of the gate oxide layer on the first wafer is the parameter information of the gate oxide layer formed by the dry oxidation process;

[0038] The reference parameter information is parameter information of a gate oxide layer formed by the dry oxidation process.

[0039] Optionally, the first machine includes a furnace tube machine; the second machine includes a low-pressure water vapor oxidation film generating machine.

[0040] Accordingly, the present disclosure also provides a manufacturing system, including:

[0041] The first machine is configured to perform multiple oxidation processes on the first wafer; wherein each oxidation process corresponds to different process parameters; and perform oxidation process on the second wafer according to the actual process parameters corresponding to the processing signal;

[0042] A control unit is configured to obtain multiple sets of parameter information of a gate oxide layer on the first wafer after the first machine performs multiple oxidation treatments on the first wafer; wherein a set of parameter information of the gate oxide layer corresponds to a single oxidation treatment of the first wafer; and, based on the reference parameter information, select target set parameter information from the multiple sets of parameter information, and use the process parameters corresponding to the oxidation treatment of the target set parameter information as actual process parameters to generate a processing signal corresponding to the actual process parameters; wherein the reference parameter information is parameter information of a gate oxide layer on the second wafer after the second machine performs oxidation treatment on the second wafer, and the types of the first machine and the second machine are different.

[0043] An embodiment of the present disclosure also provides a data processing device, including a memory and a processor, wherein the memory is suitable for storing one or more computer instructions, and when the processor runs the computer instructions, it executes any of the above-mentioned methods for forming a gate oxide layer.

[0044] The embodiment of the present disclosure further provides a computer-readable storage medium storing computer instructions, which, when executed, execute any of the aforementioned methods for forming a gate oxide layer.

[0045] The embodiment of the present disclosure further provides a computer program product, comprising computer instructions, which, when executed by a processor, implement any of the aforementioned methods for forming a gate oxide layer.

[0046] By adopting the method for forming a gate oxide layer provided by the embodiment of the present disclosure, it is possible to obtain multiple sets of parameter information of the gate oxide layer on the first wafer after the first machine performs multiple oxidation treatments on the first wafer, and then based on the reference parameter information, it is possible to select the target set parameter information from the multiple sets of parameter information. In this way, the process parameters corresponding to the oxidation treatment of the target set parameter information can be used as actual process parameters to control the first machine to perform oxidation treatment on the second wafer according to the actual process parameters. Since the reference parameter information is the parameter information of the gate oxide layer on the second wafer after the second machine performs oxidation treatment on the second wafer, when the target set parameter information is selected from the multiple sets of parameter information, it means that the first machine can replace the second machine of a different type from the first machine to perform oxidation treatment on the second wafer. That is, at least two different types of machines can be used to perform oxidation treatment on the second wafer, thereby improving the formation efficiency of the gate oxide layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments of the present invention or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 A flow chart showing a method for forming a gate oxide layer according to an embodiment of the present disclosure is shown;

[0049] Figure 2 A flow chart of obtaining parameter information of a gate oxide layer in an embodiment of the present disclosure is shown;

[0050] Figure 3 A structural schematic diagram of a manufacturing system in an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0051] As described in the background art, in the process of manufacturing the gate oxide layer, the machine used can perform compensatory oxidation growth while performing thermal annealing on the deposited silicon dioxide film. However, such machines are relatively expensive and the number is small. For large-scale gate oxide layer manufacturing, if such machines are occupied for a long time or fail, the efficiency of gate oxide layer formation will be seriously affected.

[0052] In some embodiments of the present disclosure, the inventors have discovered through multiple experiments that, under the same process parameters, the difference in gate oxide layers formed between different machines is due to the difference in ignition (Torch) devices. Even for machines of the same type, if the built-in ignition devices are different, under the same process parameters, the thickness, electrical properties or other parameters of the gate oxide layer formed on the same wafer may vary greatly.

[0053] Based on this, the present disclosure provides a method for forming a gate oxide layer, which can obtain multiple sets of parameter information of the gate oxide layer on the first wafer after the first machine performs multiple oxidation processes on the first wafer, and then based on the reference parameter information, can select the target set of parameter information from the multiple sets of parameter information. In this way, the process parameters corresponding to the oxidation process of the target set of parameter information can be used as the actual process parameters to control the first machine to perform oxidation process on the second wafer according to the actual process parameters.

[0054] Since the reference parameter information is parameter information of the gate oxide layer on the second wafer after the second machine performs oxidation treatment on the second wafer, when the target set of parameter information is selected from the multiple sets of parameter information, it means that the first machine can replace the second machine of a different type from the first machine to perform oxidation treatment on the second wafer. That is, at least two different types of machines can be used to perform oxidation treatment on the second wafer, thereby improving the formation efficiency of the gate oxide layer.

[0055] In order to enable those skilled in the art to have a clearer understanding of the technical concepts, technical principles, advantages, etc. contained in the embodiments of the present disclosure, the following is a detailed introduction through specific embodiments and in combination with specific application scenarios with reference to the accompanying drawings.

[0056] See also Figure 1 A flow chart of a method for forming a gate oxide layer in an embodiment of the present disclosure is shown in FIG. Figure 1 As shown, the gate oxide layer can be formed by the following steps.

[0057] S11, obtaining multiple sets of parameter information of a gate oxide layer on a first wafer after a first machine performs multiple oxidation processes on the first wafer.

[0058] Specifically, after the first wafer is subjected to an oxidation treatment using the first machine, a gate oxide layer can be formed on the first wafer, so that a set of parameter information of the gate oxide layer can be obtained, that is, a set of parameter information of the gate oxide layer corresponds to the oxidation treatment of the first wafer. By performing multiple oxidation treatments on the first wafer, the parameter information of the gate oxide layer of the first wafer after each oxidation treatment can be obtained, and multiple sets of parameter information can be obtained.

[0059] In some embodiments, when a first machine is used to perform multiple oxidation processes on a first wafer, process parameters corresponding to each oxidation process are different.

[0060] In some examples, "process parameters" may include oxidation method (e.g., dry oxidation process and wet oxidation process), oxidation time (e.g., dry oxidation time and wet oxidation time), temperature, pressure, doping medium type, selected first machine type (e.g., oxidation furnace or rapid thermal oxidation furnace) and material of the first machine, as well as selected second machine, etc.

[0061] In some examples, by setting different process parameters corresponding to each oxidation treatment, the actual situation of the gate oxide layer formed by the first machine under different process parameters can be reflected, so that process parameters that meet the requirements can be obtained subsequently.

[0062] In some examples, "parameter information" may refer to a type of information that can characterize the actual state of a gate oxide layer formed under corresponding process parameters, which may include a specific parameter value or multiple parameter values, and the present disclosure does not impose any limitations on this.

[0063] In some examples, a gate oxide layer may be located between the gate and the source / drain to provide electrical insulation to isolate the gate from the source / drain.

[0064] S12, based on the reference parameter information, selecting target group parameter information from multiple groups of parameter information, and taking the process parameters corresponding to the oxidation treatment of the target group parameter information as actual process parameters.

[0065] Specifically, the reference parameter information is parameter information of a gate oxide layer that is expected to be formed when the first machine performs oxidation processing on the first wafer. When it is determined that there is target group parameter information that satisfies the reference parameter information among the multiple groups of parameter information, it means that when the first machine performs multiple oxidation processings using multiple process parameters, the parameter information of the gate oxide layer corresponding to at least one oxidation processing in the multiple oxidation processings is expected to be obtained, so the corresponding group parameter information expected to be obtained can be used as the target group parameter information.

[0066] Since a set of parameter information of the gate oxide layer corresponds to an oxidation process of the first wafer, that is, there is a corresponding relationship between the parameter information and the process parameters. When determining the target set of parameter information, the process parameters corresponding to the oxidation process of the target set of parameter information can be used as actual process parameters to perform oxidation process on other wafers (such as the second wafer).

[0067] In some examples, the reference parameter information may be parameter information of a gate oxide layer on the second wafer after the second wafer is oxidized by the second machine, that is, the gate oxide layer formed on the second wafer after the oxidation process of the second wafer is performed by the second machine is the gate oxide layer to be formed by the first machine.

[0068] In some examples, the first machine and the second machine are of different types, where "different types" means that the first machine and the second machine have different film forming methods and different machine structures. Therefore, when the target set of parameter information is selected from multiple sets of parameter information, it means that the first machine can replace the second machine to perform oxidation processing on the second wafer. That is, at least two different types of machines can be used to perform oxidation processing on the second wafer, thereby improving the formation efficiency of the gate oxide layer.

[0069] In some optional examples, the second machine may refer to the machine “capable of performing compensatory oxidation growth while performing thermal annealing” in the above example, such as a low-pressure water vapor oxidation film growth (ISSG) machine.

[0070] In some optional examples, the first machine may include a furnace tube machine.

[0071] Furthermore, the furnace tube machine is a batch machine that can process multiple wafers at the same time, while the ISSG machine is a chamber machine that can only process one wafer at a time. Therefore, when the actual process parameters are obtained, using the first machine to perform oxidation treatment can improve manufacturing efficiency.

[0072] S13, generating a processing signal corresponding to the actual process parameter, wherein the processing signal is used to control the first machine to perform an oxidation process on the second wafer according to the actual process parameter.

[0073] Specifically, by adopting steps S11 and S12, at least one process parameter that meets the oxidation treatment requirement can be obtained as an actual process parameter, so that a processing signal can be generated to control the first machine to perform oxidation treatment on the second wafer.

[0074] By using the gate oxide layer forming method in the above example, the first machine can be used to replace the second machine to perform oxidation treatment on the second wafer, that is, at least two different types of machines can be used to perform oxidation treatment on the second wafer, thereby improving the formation efficiency of the gate oxide layer.

[0075] In the actual oxidation process, the inventors found that a thinner gate oxide layer can increase the switching speed of the transistor, but will increase the risk of leakage current; while a thicker gate oxide layer can reduce the leakage current, but will reduce the switching speed of the transistor. Therefore, it is necessary to strictly control the thickness parameters of the gate oxide layer. The better the thickness uniformity of the formed gate oxide layer, the better the electrical performance of the transistor.

[0076] In some examples of the present disclosure, a set of parameter information may include at least one parameter value, and the at least one parameter value may include a thickness parameter value of a gate oxide layer.

[0077] In some examples, there are multiple positions on the first wafer, and by obtaining the thickness parameters of the gate oxide layer at the multiple positions, the manufacturing performance of the first machine under corresponding process parameters can be evaluated.

[0078] As an example, see Figure 2 A flowchart of obtaining parameter information of a gate oxide layer in an embodiment of the present disclosure is shown in FIG. Figure 2 As shown, the following steps can be performed:

[0079] S21, for any oxidation treatment of the first wafer, obtaining a thickness value of a gate oxide layer corresponding to each position point on the first wafer after the first wafer is subjected to the oxidation treatment.

[0080] Specifically, after the first wafer is oxidized, a gate oxide layer can be formed on the first wafer. By measuring each position point on the first wafer, the thickness value of the gate oxide layer corresponding to each position point can be obtained; wherein the thickness value can reflect whether the thickness of the gate oxide layer meets the requirements after the first wafer is oxidized.

[0081] In some examples, any of the following methods may be used to obtain the thickness value of the gate oxide layer corresponding to each position point on the first wafer:

[0082] Obtain capacitance values ​​corresponding to different voltage values ​​of the gate oxide layer at each position point of the first wafer; and determine thickness values ​​of the gate oxide layer corresponding to each position point on the first wafer based on multiple voltage values ​​and corresponding capacitance values ​​of the gate oxide layer at each position point.

[0083] Alternatively, the thickness of the gate oxide layer corresponding to each position point on the first wafer is determined according to the light intensity value and polarization form of the polarized light reflected by the gate oxide layer at each position point on the first wafer.

[0084] S22, according to the thickness value of the gate oxide layer corresponding to each position point on the first wafer, determine the thickness difference percentage of the gate oxide layer corresponding to each position point on the first wafer, so as to obtain the thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage.

[0085] Specifically, after the first wafer is oxidized, the thickness value of the gate oxide layer corresponding to each position point can be obtained to obtain multiple thickness values. According to the multiple thickness values, the thickness difference percentage between the multiple thickness values ​​can be obtained; wherein the thickness difference percentage can reflect whether the thickness uniformity of the gate oxide layer of the first wafer after the oxidation treatment meets the requirements.

[0086] In some examples, assuming that there are three position points on the wafer, through measurement, three corresponding thickness values ​​THK1, THK2 and THK3 with increasing thickness values ​​can be obtained, among which THK3 is the largest and THK1 is the smallest; accordingly, three thickness difference percentages THK1U%, THK2U% and THK3U% can be obtained, among which THK1U%= (THK2-THK1) / THK2, THK2U%= (THK3-THK2) / THK3, THK3U%= (THK3-THK1) / THK3.

[0087] That is, the thickness difference percentage is the ratio between the difference between any two thickness values ​​and the larger thickness value of the two thickness values.

[0088] It can be understood that the number of position points, thickness values ​​and thickness difference percentages listed in the above examples are only examples for indicating that the thickness difference percentage can be determined by measuring the thickness of the gate oxide layer at different positions of the first wafer.

[0089] S23, taking the thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage as the thickness parameter value of the gate oxide layer, so as to obtain any set of parameter information after the first wafer is subjected to any oxidation treatment.

[0090] After obtaining the multiple sets of parameter information on the first wafer after multiple oxidation treatments, the target set of parameter information can be selected from the multiple sets of parameter information according to the thickness value in each set of parameter information and the thickness difference percentage.

[0091] In some examples of the present disclosure, the reference parameter information may include a reference thickness parameter value, and the reference thickness parameter value may include: a reference thickness value and a reference thickness difference percentage.

[0092] Based on this, the step of selecting target group parameter information from multiple groups of parameter information includes: selecting the maximum thickness value and the thickness difference percentage corresponding to the maximum thickness value from the multiple groups of parameter information respectively to obtain multiple maximum thickness values ​​and thickness difference percentages corresponding to the multiple maximum thickness values; if there is a target maximum thickness value among the multiple maximum thickness values, the difference with the baseline thickness value is within a first preset range, and the difference between the thickness difference percentage corresponding to the target maximum thickness value and the baseline thickness difference percentage is within a second preset range, then the parameter information of the group where the target maximum thickness value is located is used as the target group parameter information.

[0093] Specifically, for any oxidation treatment of the first wafer, by measuring the thickness of the gate oxide layer at each position point on the first wafer, the maximum thickness value of any oxidation treatment and the corresponding maximum thickness difference percentage can be obtained. When the first wafer is subjected to multiple oxidation treatments using different process parameters, multiple maximum thickness values ​​and the maximum thickness difference percentages corresponding to each maximum thickness value can be obtained, that is, a maximum thickness value and the corresponding maximum thickness difference percentage are measured corresponding to one oxidation treatment.

[0094] By comparing each maximum thickness value with the reference thickness value respectively, when there is a difference between one of the maximum thickness values ​​and the reference thickness value within a first preset range, it means that the first machine can be used to generate a gate oxide layer with a thickness value that meets the reference thickness value; by comparing each maximum thickness difference percentage with the reference thickness value respectively, when there is a difference between one of the maximum thickness values ​​and the reference thickness difference percentage within a second preset range, it means that the first machine can be used to generate a gate oxide layer with a thickness difference percentage that meets the reference thickness difference percentage.

[0095] When the difference between the maximum thickness value and the reference thickness value is within the first preset range, and the difference between the thickness difference percentage corresponding to the maximum thickness value and the reference thickness difference percentage is within the second preset range, it means that the first machine can generate a gate oxide layer that meets the reference thickness parameter value requirements, so that the parameter information of the group where the target maximum thickness value is located can be used as the target group parameter information.

[0096] In some optional examples, when there is no thickness parameter that satisfies both the reference thickness value and the reference thickness difference percentage, the process parameters of the first wafer can be readjusted until a thickness parameter that satisfies the reference thickness value and the reference thickness difference percentage is obtained.

[0097] During the actual oxidation process, the inventors further discovered that the electrical parameters of the gate oxide layer (such as current flux, dielectric constant, etc.) will also affect the electrical performance of the transistor.

[0098] In some embodiments of the present disclosure, the at least one parameter value may further include an electrical parameter value of a gate oxide layer, and the reference parameter information may further include a reference electrical parameter value.

[0099] Accordingly, the step of selecting target group parameter information from multiple groups of parameter information based on the benchmark parameter information may further include:

[0100] Determine whether the electrical parameter value of the parameter information of the group where the target maximum thickness value belongs meets the requirement of the benchmark electrical parameter value; if so, use the parameter information of the group where the target maximum thickness value belongs as the target group parameter information; if not, change the process parameters corresponding to each oxidation treatment of the first wafer until the target group parameter information is obtained.

[0101] Specifically, if the electrical parameters of the gate oxide layer meet the reference electrical parameters, it means that the thickness value, thickness difference percentage and electrical parameters of the gate oxide layer formed by oxidation using the first machine can meet the manufacturing requirements. Using the current process parameters, a gate oxide layer that meets the manufacturing requirements can be formed on the second wafer.

[0102] If the electrical parameters of the gate oxide layer meet the benchmark electrical parameters, it means that the gate oxide layer formed by the first oxidation process cannot fully meet the manufacturing requirements. At this time, the process parameters corresponding to the secondary oxidation treatment can be adjusted again to obtain the target set of parameter information that meets the manufacturing requirements.

[0103] In some optional examples, when the target group parameter information is obtained, the actual process parameters can be applied to the oxidation treatment of the first machine.

[0104] In some examples, the electrical parameter value of the gate oxide layer may include at least one of the electrical thickness of the gate oxide layer in the accumulation region, the electrical thickness of the gate oxide layer in the inversion region, the breakdown voltage of the gate oxide layer, and the gate leakage current on the gate oxide layer.

[0105] In the actual oxidation process, for different oxidation processes, under the condition that other conditions are the same, the parameters of the gate oxide layer manufactured are not completely the same.

[0106] For example, the dry oxidation process has a faster film formation rate and the thickness uniformity of the gate oxide layer is better than that of the wet oxidation process; and the TDDB (Time Dependent Dielectric Breakdown) performance of the wet oxidation process is better than that of the dry oxidation process.

[0107] Among them, the "dry oxidation process" is a process that uses oxygen or oxygen mixed gas at high temperature to form an oxide layer on the surface of the wafer; the "wet oxidation process" is a process that uses water vapor or water vapor mixed gas at high temperature to form an oxide layer on the surface of the wafer.

[0108] In some embodiments of the present disclosure, a dry oxidation process and / or a wet oxidation process can be adopted and the hydrogen-oxygen ratio can be adjusted to form a gate oxide layer having the same thickness. The thickness parameters and electrical parameters of the gate oxide layer can be measured to determine whether the process parameters used to oxidize the first wafer can be applied to the manufacture of the second wafer.

[0109] In some examples, the oxidation process includes a dry oxidation process and a wet oxidation process; wherein, in performing the oxidation process, the wet oxidation process is first performed on the first wafer or the second wafer, and then the dry oxidation process is performed on the first wafer or the second wafer, that is, wet oxidation is performed first, and then dry oxidation is performed.

[0110] In this case, the parameter information of the gate oxide layer on the first wafer includes parameter information of the gate oxide layer formed by the dry oxidation process; and the reference parameter information includes parameter information of the gate oxide layer formed by the dry oxidation process on the second wafer.

[0111] In some optional examples, during the oxidation process, a dry oxidation process is first performed on the first wafer or the second wafer, and then a wet oxidation process is performed on the first wafer or the second wafer. In this case, the parameter information may refer to parameter information of a gate oxide layer formed by the wet oxidation process.

[0112] Based on the above, by adopting dry oxidation process and wet oxidation process, and adjusting hydrogen-oxygen ratio and other parameters, the process requirements of gate oxide layer manufactured by the second machine can be achieved by the first machine. That is, for the integrated process of gate oxide layer, the first machine (such as furnace tube machine) can replace the second machine (such as ISSG machine).

[0113] To facilitate understanding and explanation of the solution of replacing the second machine with the first machine in the embodiment of the present disclosure, an exemplary description is given below through an embodiment.

[0114] Assume that a furnace tube machine is used to perform three oxidation processes on the first wafer, where:

[0115] During the first oxidation treatment, wet and dry oxidation processes are used simultaneously; wherein the gate oxide layer formed by the wet oxidation process has a thickness of 55 angstroms, and the gate oxide layer formed by the dry oxidation process has a thickness of 26 angstroms.

[0116] During the second oxidation treatment, wet and dry oxidation processes are used simultaneously; wherein the gate oxide layer formed by the wet oxidation process has a thickness of 28 angstroms, and the gate oxide layer formed by the dry oxidation process has a thickness of 52 angstroms.

[0117] During the third oxidation treatment, only a dry oxidation process is used, and the thickness of the gate oxide layer formed by the dry oxidation process is 61 angstroms.

[0118] After oxidation treatment, the thickness values ​​and thickness difference percentages after the three oxidation treatments were measured respectively, where:

[0119] In the process using 55 angstroms (wet oxidation process) + 26 angstroms (dry oxidation process), the maximum thickness of the gate oxide film on the first wafer in the top area of ​​the furnace tube machine is 62.89 angstroms, and the maximum thickness difference percentage is 0.66; the maximum thickness of the gate oxide film on the first wafer in the middle area of ​​the furnace tube machine is 62.57 angstroms, and the maximum thickness difference percentage is 0.91; the maximum thickness of the gate oxide film on the first wafer in the bottom area of ​​the furnace tube machine is 61.06 angstroms, and the maximum thickness difference percentage is 1.49.

[0120] In the process using 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process), the maximum thickness of the gate oxide film on the first wafer in the top area of ​​the furnace tube machine is 61.24 angstroms, and the maximum thickness difference percentage is 0.21; the maximum thickness of the gate oxide film on the first wafer in the middle area of ​​the furnace tube machine is 60.28 angstroms, and the maximum thickness difference percentage is 0.37; the maximum thickness of the gate oxide film on the first wafer in the bottom area of ​​the furnace tube machine is 61.06 angstroms, and the maximum thickness difference percentage is 0.63.

[0121] It can be seen that the thickness parameter of the gate oxide layer formed by the process of 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process) is better than that of the process of 55 angstroms (wet oxidation process) + 26 angstroms (dry oxidation process). And by comparing it with the thickness parameter of the gate oxide layer formed by the ISSG machine (the thickness parameter of the gate oxide layer formed by the ISSG machine can be obtained from the existing ISSG machine for actual production and the relevant published texts), the thickness parameters of the two are basically the same.

[0122] In some embodiments of the present disclosure, in order to further illustrate the effectiveness of the present solution, a furnace tube machine may be used to perform a 28 angstrom (wet oxidation process) + 52 angstrom (dry oxidation process) process to perform an oxidation treatment operation on the second wafer, wherein:

[0123] In the process using 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process), the maximum thickness of the gate oxide film on the second wafer in the top area of ​​the furnace tube machine is 61.56 angstroms, and the maximum thickness difference percentage is 0.17; the maximum thickness of the gate oxide film on the first wafer in the middle area of ​​the furnace tube machine is 61.76 angstroms, and the maximum thickness difference percentage is 0.15; the maximum thickness of the gate oxide film on the first wafer in the bottom area of ​​the furnace tube machine is 61.66 angstroms, and the maximum thickness difference percentage is 0.42.

[0124] It can be seen that the furnace tube machine can use the oxidation process of 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process) to replace the ISSG machine to oxidize the second wafer.

[0125] It should be noted that the oxidation process types, thickness of the gate oxide layer formed, formation conditions and parameter measurement values ​​listed above are all exemplary descriptions, and the above parameter values ​​can be adjusted for different application scenarios and manufacturing requirements.

[0126] In some examples, when a furnace tube machine is used to perform oxidation treatment, the thickness uniformity of the gate oxide layer at the bottom of the furnace tube machine is poor, but the furnace tube machine is a batch machine (for example, 100 wafers can be run at a time, and one oxidation treatment takes 7 hours), while the ISSG machine is a Chamber machine (one wafer can be run at a time, and one oxidation treatment takes 6 minutes). From the perspective of WPH (Wafers Per Hours), even if the bottom of the furnace tube machine does not perform oxidation deposition treatment on the wafer, the furnace tube machine can still oxidize 75 wafers at a time. Therefore, the WPH of the furnace tube machine is 10.71, while the WPH of the ISSG machine is 10. In terms of cost-effectiveness, the difference between the two is not large, and the price of the furnace tube machine is much lower than that of the ISSG machine. Therefore, by using multiple furnace tube machines, the oxidation treatment process of the wafer can be performed simultaneously, thereby improving production efficiency.

[0127] In some examples of the present disclosure, after determining that the furnace tube machine can perform an oxidation process of 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process) and can generate a gate oxide layer that meets the thickness requirements, the electrical parameters under the oxidation process of 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process) can also be measured.

[0128] As an optional example, the furnace tube machine adopts an oxidation process of 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process), and the electrical thickness of the gate oxide layer in the accumulation zone on the first wafer in the top area of ​​the furnace tube machine is 55.8; the electrical thickness of the gate oxide layer in the accumulation zone on the first wafer in the middle area of ​​the furnace tube machine is 56; the electrical thickness of the gate oxide layer in the accumulation zone on the first wafer in the bottom area of ​​the furnace tube machine is 55.9.

[0129] When the ISSG machine adopts an oxidation process of 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process), the electrical thickness of the gate oxide layer in the accumulation zone on the second wafer in the top area of ​​the ISSG machine is 55.4 angstroms; the electrical thickness of the gate oxide layer in the accumulation zone on the second wafer in the middle area of ​​the ISSG machine is 55.5 angstroms; and the electrical thickness of the gate oxide layer in the accumulation zone on the second wafer in the bottom area of ​​the furnace tube machine is 55.6 angstroms.

[0130] It can be seen that when using the oxidation process of 28 angstroms (wet oxidation process) + 52 angstroms (dry oxidation process), the electrical thickness of the gate oxide layer in the accumulation area on the wafer in different areas of the machine is basically the same, indicating that the furnace tube machine can generate a gate oxide layer that meets the electrical requirements.

[0131] It should be noted that, in order to facilitate the description of the technical solution of the present disclosure and highlight the innovative part of the present disclosure, in the embodiments of the present disclosure, the specific steps of how to use dry and / or wet oxidation process to oxidize the wafer to form a gate oxide layer are not described, wherein the specific steps of forming the gate oxide layer can refer to the existing examples.

[0132] The present disclosure also provides a manufacturing system corresponding to the method for forming a gate oxide layer described in any of the above embodiments, which is introduced below. It should be noted that the content of the manufacturing system described below can be referenced to the content of the method for forming a gate oxide layer described above.

[0133] In some embodiments of the present disclosure, see Figure 3 A structural schematic diagram of a manufacturing system in an embodiment of the present disclosure is shown in FIG. Figure 3 As shown, the manufacturing system 100 may include:

[0134] The first machine 110 is configured to perform multiple oxidation processes on the first wafer; wherein each oxidation process corresponds to different process parameters; and perform oxidation process on the second wafer according to the actual process parameters corresponding to the processing signal;

[0135] The control unit 120 is configured to obtain multiple sets of parameter information of the gate oxide layer on the first wafer after the first machine performs multiple oxidation treatments on the first wafer; wherein a set of parameter information of the gate oxide layer corresponds to a single oxidation treatment of the first wafer; and, based on the reference parameter information, select the target group parameter information from the multiple sets of parameter information, and use the process parameters corresponding to the oxidation treatment of the target group parameter information as the actual process parameters, and generate a processing signal corresponding to the actual process parameters; wherein the reference parameter information is the parameter information of the gate oxide layer on the second wafer after the second machine performs oxidation treatment on the second wafer, and the first machine 110 and the second machine are of different types.

[0136] Using the manufacturing system 100 in the embodiment of the present disclosure, the reference parameter information is the parameter information of the gate oxide layer on the second wafer after the second wafer is oxidized by the second machine. When the control unit 120 selects the target group parameter information from the multiple groups of parameter information, it means that the first machine 110 can replace the second machine to perform the oxidation process on the second wafer. That is, at least two different types of machines can be used to perform the oxidation process on the second wafer, thereby improving the efficiency of forming the gate oxide layer.

[0137] In the actual oxidation process, the inventors found that a thinner gate oxide layer can increase the switching speed of the transistor, but will increase the risk of leakage current; while a thicker gate oxide layer can reduce the leakage current, but will reduce the switching speed of the transistor. Therefore, it is necessary to strictly control the thickness parameters of the gate oxide layer. The better the thickness uniformity of the formed gate oxide layer, the better the electrical performance of the transistor.

[0138] In some examples of the present disclosure, a set of parameter information may include at least one parameter value, and the at least one parameter value includes a thickness parameter value of a gate oxide layer.

[0139] Correspondingly, for any oxidation treatment of the first wafer, the control unit can obtain the thickness value of the gate oxide layer corresponding to each position point on the first wafer after the first wafer is oxidized; and, based on the thickness value of the gate oxide layer corresponding to each position point on the first wafer, determine the thickness difference percentage of the gate oxide layer corresponding to each position point on the first wafer to obtain the thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage; and then the thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage can be used as the thickness parameter value to obtain any set of parameter information of the first wafer after any oxidation treatment.

[0140] The method of determining any set of parameter information of the first wafer after any oxidation treatment can refer to the above example.

[0141] During the actual oxidation process, the inventors further discovered that the electrical parameters of the gate oxide layer (such as current flux, dielectric constant, etc.) will also affect the electrical performance of the transistor.

[0142] In some embodiments of the present disclosure, the at least one parameter value may further include an electrical parameter value of a gate oxide layer, and the reference parameter information may further include a reference electrical parameter value.

[0143] Correspondingly, the control unit can also determine whether the electrical parameter value of the parameter information of the group where the target maximum thickness value is located meets the requirements of the benchmark electrical parameter value; if so, the parameter information of the group where the target maximum thickness value is located is used as the target group parameter information; if not, the process parameters corresponding to each oxidation treatment of the first wafer are changed until the target group parameter information is obtained.

[0144] Furthermore, when the control unit determines that the electrical parameter value of the group in which the target maximum thickness value belongs meets the requirements of the benchmark electrical parameter value, it can generate a processing signal corresponding to the actual process parameter to the first machine, so that the first machine performs oxidation processing on the second wafer.

[0145] In the actual oxidation process, for different oxidation processes, under the condition that other conditions are the same, the parameters of the gate oxide layer manufactured are not completely the same.

[0146] For example, the dry oxidation process has a faster film formation rate and the thickness uniformity of the gate oxide layer is better than that of the wet oxidation process; and the TDDB (Time Dependent Dielectric Breakdown) performance of the wet oxidation process is better than that of the dry oxidation process.

[0147] In some embodiments of the present disclosure, the first machine can form a gate oxide layer with the same thickness by adopting a dry oxidation process and / or a wet oxidation process and adjusting the hydrogen-oxygen ratio, and measure the thickness parameters and electrical parameters of the gate oxide layer to determine whether the process parameters used to oxidize the first wafer can be applied to the manufacture of the second wafer.

[0148] In some examples, the oxidation process includes a dry oxidation process and a wet oxidation process; wherein, in performing the oxidation process, the first machine may first perform a wet oxidation process on the first wafer or the second wafer, and then perform a dry oxidation process on the first wafer or the second wafer, that is, wet oxidation first, and then dry oxidation.

[0149] In some optional examples, the first machine may include a furnace tube machine. The furnace tube machine is a batch machine that can process multiple wafers at the same time. Therefore, when the actual process parameters are obtained, the furnace tube machine is used to perform the oxidation process, which can improve the manufacturing efficiency.

[0150] It should be noted that when the furnace tube machine is used for oxidation treatment, a gate oxide layer will be formed on both the crystal face and the crystal back of the wafer, wherein the crystal face and the crystal back are two opposite surfaces.

[0151] The present disclosure also provides a data processing device, which may include a memory and a processor. The memory and the processor may communicate with each other via a communication bus. The memory stores computer instructions that can be run on the processor. When the processor runs the computer instructions, the method for forming a gate oxide layer described in any of the above embodiments may be executed. For details, please refer to the above-mentioned related content and will not be repeated here.

[0152] In a specific implementation, the processor may include a central processing unit, a field programmable gate array, etc.

[0153] The memory may include a random access memory (RAM), a read-only memory (ROM), a non-volatile memory (NVM), etc.

[0154] In a specific implementation, the computer instructions may include any suitable type of code implemented using any suitable high-level, low-level, object-oriented, visual, compiled and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0155] In some examples, the data processing device may further include a display interface and a display connected through the display interface. The display interface may communicate with the memory and the processor through a communication bus. The display may display the result obtained by the processor executing the method for forming a gate oxide layer provided in an embodiment of the present disclosure, such as parameter information of the gate oxide layer and process parameters corresponding to each oxidation treatment.

[0156] In some examples, the data processing device may further include a data output interface, and the data output interface may communicate with the memory and the processor through a communication bus to output various data in the process of the method for forming the gate oxide layer.

[0157] The present disclosure further provides a computer-readable storage medium on which computer instructions are stored. When the computer instructions are executed, the method for forming a gate oxide layer described in any of the above embodiments of the present disclosure can be executed. For details, please refer to the above related content and will not be repeated here.

[0158] The computer-readable storage medium may include any suitable type of memory unit, memory device, memory article, memory medium, storage device, storage article, storage medium and / or storage unit, such as memory, removable or non-removable medium, erasable or non-erasable medium, writable or rewritable medium, digital or analog medium, hard disk, floppy disk, compact disk read-only memory (CDROM), compact disk recordable (CD-R), compact disk rewritable (CD-RW), optical disk, magnetic medium, magneto-optical medium, removable memory card or disk, various types of digital versatile disks (DVD), magnetic tape, cassette, etc.

[0159] Furthermore, the computer instructions may include any suitable type of code implemented using any suitable high-level, low-level, object-oriented, visual, compiled and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0160] The present invention also provides a computer program product, which may include computer instructions. When the computer instructions are executed by a processor, the method for forming a gate oxide layer described in any of the above embodiments of the present invention is implemented. For details, please refer to the above related content and will not be repeated here.

[0161] It is understood that the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined by the terms "first", "second", etc. may explicitly or implicitly include one or more of the features. Moreover, the terms "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or indicate importance. It is understood that the terms used in this way are interchangeable where appropriate so that the embodiments of the present disclosure described herein can be implemented in an order other than those illustrated or described herein.

[0162] Although the embodiments of the present disclosure are disclosed as above, the invention is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for forming a gate oxide layer, characterized in that: include: Acquiring multiple sets of parameter information of a gate oxide layer on the first wafer after the first machine performs multiple oxidation treatments on the first wafer; wherein a set of parameter information of the gate oxide layer corresponds to one oxidation treatment of the first wafer, and the process parameters corresponding to each oxidation treatment are different; Based on the reference parameter information, target group parameter information is selected from the multiple groups of parameter information, and the process parameters corresponding to the oxidation treatment of the target group parameter information are used as actual process parameters; wherein the reference parameter information is parameter information of a gate oxide layer on a second wafer after the oxidation treatment is performed on the second wafer by a second machine, and the first machine and the second machine are of different types; A processing signal corresponding to the actual process parameter is generated, and the processing signal is used to control the first machine to perform an oxidation process on the second wafer according to the actual process parameter.

2. The method for forming a gate oxide layer according to claim 1, characterized in that: A set of parameter information includes at least one parameter value, wherein the at least one parameter value includes a thickness parameter value of a gate oxide layer; The obtaining of multiple sets of parameter information of the gate oxide layer on the first wafer after the first machine performs multiple oxidation processes on the first wafer includes: For any oxidation treatment of the first wafer, obtaining a thickness value of the gate oxide layer corresponding to each position point on the first wafer after the first wafer is subjected to the oxidation treatment, wherein the first wafer has a plurality of position points; Determine the thickness difference percentage of the gate oxide layer corresponding to each position point on the first wafer according to the thickness value of the gate oxide layer corresponding to each position point on the first wafer, so as to obtain the thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage; The thickness value of the gate oxide layer corresponding to each position point and the corresponding thickness difference percentage are used as the thickness parameter value of the gate oxide layer to obtain any set of parameter information after the first wafer is subjected to any oxidation treatment.

3. The method for forming a gate oxide layer according to claim 2, characterized in that: The obtaining of the thickness value of the gate oxide layer corresponding to each position point on the first wafer after the first wafer is oxidized includes: Obtaining capacitance values ​​corresponding to gate oxide layers at various positions of the first wafer when the gate oxide layers are at different voltage values; determining thickness values ​​of the gate oxide layers corresponding to various positions on the first wafer based on a plurality of voltage values ​​and corresponding capacitance values ​​of the gate oxide layers at various positions; or, The thickness of the gate oxide layer corresponding to each position point on the first wafer is determined according to the light intensity value and polarization form of the polarized light reflected by the gate oxide layer at each position point on the first wafer.

4. The method for forming a gate oxide layer according to claim 2 or 3, characterized in that: The reference parameter information includes a reference thickness parameter value, and the reference thickness parameter value includes: a reference thickness value and a reference thickness difference percentage; The selecting target group parameter information from multiple groups of parameter information based on the benchmark parameter information includes: Selecting the maximum thickness value and the thickness difference percentage corresponding to the maximum thickness value from the multiple sets of parameter information respectively, so as to obtain multiple maximum thickness values ​​and the thickness difference percentages corresponding to the multiple maximum thickness values; If there is a target maximum thickness value among the multiple maximum thickness values, the difference between which and the reference thickness value is within a first preset range, and the difference between the thickness difference percentage corresponding to the target maximum thickness value and the reference thickness difference percentage is within a second preset range, the parameter information of the group to which the target maximum thickness value belongs is used as the target group parameter information.

5. The method for forming a gate oxide layer according to claim 4, characterized in that: The at least one parameter value also includes an electrical parameter value of the gate oxide layer; the reference parameter information also includes a reference electrical parameter value; The step of selecting target group parameter information from multiple groups of parameter information based on the benchmark parameter information further includes: Determine whether the electrical parameter value of the parameter information of the group where the target maximum thickness value belongs meets the requirement of the reference electrical parameter value; If the conditions are met, the step of using the parameter information of the group where the target maximum thickness value belongs as the target group parameter information is executed; If not, changing the process parameters corresponding to each oxidation treatment of the first wafer until the target set of parameter information is obtained; The method further comprises: After obtaining the target set of parameter information, the actual process parameters are applied to the oxidation process of the first machine.

6. The method for forming a gate oxide layer according to claim 5, characterized in that: The electrical parameter value of the gate oxide layer includes at least one of the following: The electrical thickness of the gate oxide layer in the accumulation region; The electrical thickness of the gate oxide layer in the inversion region; Gate oxide breakdown voltage; Gate leakage current on the gate oxide.

7. The method for forming a gate oxide layer according to claim 1, characterized in that: The oxidation treatment includes a dry oxidation process and a wet oxidation process; wherein, in performing the oxidation treatment process, the first machine first performs a wet oxidation process on the first wafer, and then performs the dry oxidation process on the first wafer; the second machine first performs a wet oxidation process on the second wafer, and then performs the dry oxidation process on the second wafer; The parameter information of the gate oxide layer on the first wafer is the parameter information of the gate oxide layer formed by the dry oxidation process; The reference parameter information is parameter information of a gate oxide layer formed by the dry oxidation process.

8. The method for forming a gate oxide layer according to claim 1, characterized in that: The first machine includes a furnace tube machine; the second machine includes a low-pressure water vapor oxidation film forming machine.

9. A manufacturing system, characterized in that: include: The first machine is configured to perform multiple oxidation processes on the first wafer; wherein each oxidation process corresponds to different process parameters; and perform oxidation process on the second wafer according to the actual process parameters corresponding to the processing signal; A control unit is configured to obtain multiple sets of parameter information of a gate oxide layer on the first wafer after the first machine performs multiple oxidation treatments on the first wafer; wherein a set of parameter information of the gate oxide layer corresponds to a single oxidation treatment of the first wafer; and, based on the reference parameter information, select target set parameter information from the multiple sets of parameter information, and use the process parameters corresponding to the oxidation treatment of the target set parameter information as actual process parameters to generate a processing signal corresponding to the actual process parameters; wherein the reference parameter information is parameter information of a gate oxide layer on the second wafer after the second machine performs oxidation treatment on the second wafer, and the types of the first machine and the second machine are different.

10. A data processing device, characterized in that: The invention comprises a memory and a processor, wherein the memory is suitable for storing one or more computer instructions, and when the processor runs the computer instructions, the method for forming a gate oxide layer according to any one of claims 1 to 8 is executed.

11. A computer-readable storage medium, characterized in that: Computer instructions are stored, and when the computer instructions are executed, the method for forming a gate oxide layer according to any one of claims 1 to 8 is executed.

12. A computer program product, characterized in that The method comprises computer instructions, which, when executed by a processor, implement the method for forming a gate oxide layer according to any one of claims 1 to 8.

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