A microstructured wire and a method for preparing the same

Abstract

The present invention discloses a high-voltage conductor with a surface microstructure (abbreviated as "microstructured conductor") and a preparation method thereof. The high-voltage conductor with a surface microstructure is continuously prepared by a wire drawing nanoimprinting method using a wire drawing die with a micro-nanostructure on the inner hole surface. The preparation method has low cost and high efficiency, and can mass-produce high-performance microstructured conductors with super-hydrophobicity, super-oleophobicity, anti-icing, anti-freezing rain, anti-rime, anti-fouling and self-cleaning functions, thereby solving the icing problem faced by overhead high-voltage conductors in ice, snow and freezing rain weather, and providing a new technical solution for improving the reliability and stability of transmission lines.

Description

Technical Field

[0001] The invention belongs to the technical field of micro-machining, and in particular relates to a micro-structured wire and a preparation method thereof. Background Art

[0002] High-voltage conductors are critical components in power transmission systems, and their performance directly impacts the efficiency and reliability of power transmission. In weather conditions such as snow, ice, and freezing rain, high-voltage conductors are prone to icing, which increases mechanical loads and can lead to serious problems such as conductor breakage and power outages. Furthermore, icing can cause electrical problems such as conductor vibration and flashover, significantly impacting the safety and stability of the entire transmission system.

[0003] Existing solutions include heating conductors, mechanical vibration, and anti-icing coatings, but these methods all have many limitations: heating conductors requires a large amount of electricity, which not only has high operating costs, but also complex equipment and difficult maintenance; mechanical vibration is only suitable for mild icing conditions and has limited effect when high-voltage conductors are severely iced, and the installation and maintenance costs of mechanical devices are high; although anti-icing coatings can reduce the adhesion of ice and snow to a certain extent, the coating has low bonding strength and poor wear resistance, and usually gradually loses its effectiveness during use, requiring regular re-coating, which undoubtedly increases maintenance costs and workload.

[0004] In recent years, the construction of the surface microstructure of the bulk material can provide armor protection and good wear resistance for the functional coating, or it has excellent properties such as super hydrophobicity, super oleophobicity and anti-icing, which has attracted widespread attention. In 2020, Professor Wang Dehui's team at the University of Electronic Science and Technology of China published a study on the preparation of super hydrophobic surfaces with excellent wear resistance by constructing microstructures in Nature (Wang DH, et al. Design of robust superhydrophobic surfaces. Nature, 2020, 582 (7810): 55-59). In 2015, Professor Vorobyev's team abroad published a study on the preparation of metal surfaces with super hydrophobic and self-cleaning functions by laser etching microstructures in Journal of Applied Physics (Vorobyev AY, et al. Multifunctional surfaces produced by femtosecond laser pulses. Journal of Applied Physics, 2015, 117 (3): 033103-1-033103-5). The surface microstructure of the bulk material can facilitate the formation of a suspended state (Cassie-Baxter state) on the surface of the liquid, thereby increasing the contact angle. Furthermore, the surface microstructure can capture air, forming air pockets between the droplet and the solid surface. The presence of air pockets can significantly reduce the actual contact area between the droplet and the solid surface, making the droplet more likely to roll rather than spread, further enhancing the surface's hydrophobicity. This method does not rely on external energy input and has the advantages of self-cleaning and good durability, making it suitable for a variety of extreme environmental conditions.

[0005] However, fabricating uniform and stable bulk material micro-nanostructures on large-area substrates remains a major challenge. While traditional micro-nanostructure fabrication methods can achieve high-precision surface treatment in laboratory environments, these methods are costly and time-consuming, making them difficult to apply to large-scale industrial production.

[0006] Currently, there are no reports on the fabrication technology for micro-nanostructures in bulk materials on the surface of high-voltage conductors. High-voltage conductors are required to possess high mechanical strength, high-temperature resistance, UV resistance, and stability for prolonged outdoor exposure. Existing micro-nanostructure fabrication technologies are difficult to implement on high-voltage conductors and cannot guarantee their long-term durability and stability. Furthermore, the complex geometry and multi-strand winding design of high-voltage conductors make it extremely difficult to uniformly construct micro-nanostructures on their surfaces. Effectively achieving super-hydrophobic and oleophobic properties in micro-nanostructures on high-voltage conductors still requires major technological breakthroughs and innovations. Summary of the Invention

[0007] The present invention provides a microstructured conductor and a preparation method thereof. By constructing a specific microstructure of the bulk material on the surface of the high-voltage conductor, the conductor has multiple functions such as superhydrophobicity, superoleophobicity, anti-icing, anti-freezing rain, anti-rime, anti-fouling and self-cleaning, thereby enabling the high-voltage conductor to maintain good performance and stability under extreme weather conditions.

[0008] To solve the above problems, the present invention provides the following technical solutions:

[0009] An embodiment of the present invention provides a microstructured conductor, comprising a high-voltage conductor body and an annular array of microstructures on the surface of the high-voltage conductor body. The microstructures are fabricated based on the Cassie-Baxter model. When a liquid droplet contacts the microstructured surface, it can suspend on air pockets above the microstructures. This suspension significantly reduces the actual contact area between the droplet and the surface of the microstructured conductor, thereby greatly improving the hydrophobicity of the microstructured conductor surface. The Cassie-Baxter state of the microstructures: When a droplet contacts a surface, if microstructures are present on the surface, these microstructures can capture air and form multiple small air pockets. The droplet suspends on these small air pockets rather than completely wetting the solid surface. In this state, the surface contact angle increases significantly, making it easier for the droplet to roll off rather than spread on the surface, preventing the droplet from remaining on the conductor surface for an extended period of time, thereby reducing the risk of freezing.

[0010] The microstructure is one or a combination of V-shaped microstructures, trapezoidal microstructures, rectangular microstructures, and arc-shaped microstructures; the geometric characteristics of the microstructure enable it to capture more air when in contact with a liquid droplet, forming a stable air pocket; the V-shaped microstructure and the trapezoidal microstructure are more likely to capture air when in contact with a liquid droplet due to their sharp tops and inclined sides; the rectangular microstructure and the arc-shaped microstructure provide stable support points through flat or curved surfaces, so that the air pockets can be evenly distributed between the liquid droplet and the surface;

[0011] The contact angle between the microstructure and the droplet is in the range of 150° to 160°: due to the reduced contact area between the droplet and the microstructure surface, the contact angle reaches 150° to 160°. This high contact angle makes the droplet appear almost spherical on the surface, further enhancing the possibility of the droplet rolling off.

[0012] The top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

[0013] According to an optional embodiment of the present invention, the array period of the microstructures ranges from 100 nm to 1 mm.

[0014] According to an optional embodiment of the present invention, the cross-sectional size of the high-voltage conductor body ranges from 1 mm to 50 mm.

[0015] According to an optional embodiment of the present invention, the material of the high-voltage conductor body is one of iron, aluminum, copper and alloys thereof.

[0016] According to an optional embodiment of the present invention, the high-voltage conductor body is one of a single conductor with a circular, rectangular or irregular cross-section and a stranded wire composed of multiple conductors with circular, rectangular or irregular cross-sections.

[0017] The present invention also provides a method for preparing a microstructured conductive line, comprising the following steps:

[0018] Step S1, preparing a wire drawing die with a micro-nano structure on the inner hole surface;

[0019] In step S2, a wire drawing die having a micro-nano structure on the inner hole surface is used to control the wire drawing parameters during the process by the wire drawing nanoimprinting method. After the high-voltage wire body passes through the wire drawing die and undergoes plastic deformation, a microstructured wire with a ring array microstructure formed on the surface is finally obtained.

[0020] According to an optional embodiment of the present invention, the material of the drawing die in step S1 is one of tungsten-based cemented carbide, titanium-based cemented carbide, chromium-based cemented carbide, die steel and polycrystalline diamond. The drawing parameters in the process of step S2 include drawing speed, drawing temperature, cooling rate, tensile force, lubrication method and tension. These parameters are controlled so that the high-voltage wire can completely imprint and replicate the micro-nano structure, ensuring the uniformity and consistency of the microstructure formed on the surface of the high-voltage wire body, and obtaining the required micro-structure wire; wherein, the drawing speed is: 1m / s~20m / s; the drawing temperature is: 20℃~400℃; the cooling rate is: 10℃ / s~100℃ / s; tensile force: 100N~10000N; lubrication method: dry lubrication, wet lubrication, emulsion lubrication; tension: 50N-500N; aluminum wire: drawing speed: 5m / s to 10m / s, drawing temperature: room temperature to 150℃, cooling rate: 20℃ / s to 50℃ / s, tensile force: 500N to 3kN, tension: 100N to 200N; copper wire: drawing speed: 10m / s to 20m / s, drawing temperature: 20℃ to 200℃, cooling rate: 30℃ / s to 80℃ / s, tensile force: 1kN to 10kN, tension: 200N to 500N.

[0021] According to an optional embodiment of the present invention, in step S1 , the micro-nano structure on the inner hole surface of the drawing die is covered with a layer of nano-diamond coating.

[0022] According to an optional embodiment of the present invention, the period range of the microstructure array of the annular array formed on the surface of the high-voltage conductor body in step S2 is 100nm~1mm, the original shape of the high-voltage conductor body is circular, and the original size is 1.1~1.5 times the target size obtained by a single drawing or 10~50 times the target size obtained by multiple drawing.

[0023] According to an optional embodiment of the present invention, the microstructure is one or more combination structures of a V-shaped microstructure, a trapezoidal microstructure, a rectangular microstructure and an arc-shaped microstructure, wherein the top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

[0024] Compared with the prior art, the present invention provides a microstructured wire and a method for manufacturing the same, which has the following beneficial effects:

[0025] (1) Constructing a microstructure of the bulk material on the surface of the high-voltage conductor can cause the liquid to form a Cassie-Baxter state on the surface of the high-voltage conductor, and form air pockets between the liquid droplet and the solid surface, which will increase the contact angle between the droplet and the conductor. Through the design of the surface microstructure, the high-voltage conductor can simultaneously possess super-hydrophobicity, super-oleophobicity, anti-icing, anti-freezing rain, anti-rime, anti-fouling and self-cleaning functions, making the high-voltage conductor adaptable to a variety of harsh environments.

[0026] (2) The present invention can perfectly solve the problem of ice accumulation that easily occurs on high-voltage conductors in weather such as snow and freezing rain without the need for external energy input. Because the microstructure is directly prepared on the surface of the high-voltage conductor, it has very good mechanical properties. Due to the super-hydrophobicity of the high-voltage conductor surface, water droplets can roll away and carry away dust and impurities on the surface. Therefore, the microstructured conductor has good durability and self-cleaning ability, which will significantly reduce operation and maintenance costs.

[0027] (3) The microstructured conductors of the present invention can significantly reduce the accumulation of ice and snow on the conductor surface, reducing the impact of freezing rain, ice and snow on the conductors, and improving the reliability and stability of power transmission lines. Microstructured conductors with multifunctional features such as anti-icing, anti-freezing rain, and self-cleaning properties can help build a more stable and reliable power transmission system, ensure the safety and efficiency of power supply, and reduce power outages caused by natural disasters.

[0028] (4) The method for preparing the microstructured conductors of the present invention comprises: using a wire drawing die having a micro-nanostructured inner surface, and continuously preparing the wires by a wire drawing nanoimprinting method. This method can be implemented using existing industrial technology, has a simple process, and is suitable for large-scale industrial production. It has good application prospects in the mass production of efficient and multifunctional high-voltage conductors. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0030] Figure 1 An enlarged structural schematic diagram of a microstructured wire is provided for an embodiment of the present application.

[0031] Figure 2 A schematic cross-sectional view of a microstructured conductive line is provided for an embodiment of the present application.

[0032] Figure 3 A schematic diagram of a method for preparing a microstructured wire is provided for an embodiment of the present application.

[0033] Figure 4 This is a SEM image of the surface microstructure of the microstructured wire in Example 1 of the present application.

[0034] Figure 5 This is a SEM image of the surface microstructure of the microstructured wire in Example 2 of the present application.

[0035] Figure 6 This is a SEM image of the surface microstructure of the microstructured wire in Example 3 of the present application.

[0036] Figure 7 This is a SEM image of the surface microstructure of the microstructured wire in Example 4 of the present application.

[0037] Figure 8 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 5 of the present application.

[0038] Figure 9 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 6 of the present application.

[0039] Figure 10 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 7 of the present application.

[0040] Figure 11 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 8 of the present application.

[0041] Figure 12 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 9 of the present application.

[0042] Figure 13 This is a SEM image of the surface microstructure of the microstructured wire in Example 10 of the present application.

[0043] Figure 14 This is a SEM image of the surface microstructure of the microstructured wire in Example 11 of the present application.

[0044] Figure 15 This is a SEM image of the surface microstructure of the microstructured wire in Example 12 of the present application.

[0045] Figure 16 This is a SEM image of the surface microstructure of the microstructured wire in Example 13 of the present application.

[0046] Figure 17 A water contact angle test diagram of a microstructured conductor is provided for an embodiment of the present application.

[0047] Figure 18 A comparison chart of the ice coating performance of an aluminum plate with a microstructured conductor and an aluminum plate without a surface microstructure is provided for the embodiment of the present application. DETAILED DESCRIPTION

[0048] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0049] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a microstructured conductor, which includes a high-voltage conductor body 3-1 and a ring-shaped array of microstructures 3-2 on the surface of the high-voltage conductor body 3-1. The microstructure 3-2 is prepared based on the Cassie-Baxter model. When a droplet 3-4 contacts the surface of the microstructure 3-2, the droplet 3-4 can be suspended on the air pockets above the microstructure 3-2. This suspended state significantly reduces the actual contact area between the droplet and the surface of the microstructured conductor it contacts, thereby greatly improving the hydrophobicity of the surface of the microstructured conductor; Cassie-Baxter state of the microstructure 3-2: when the droplet 3-4 contacts the surface, if there are microstructures on the surface, these microstructures can capture air and form multiple small air pockets; the droplet is suspended on these small air pockets instead of completely wetting the solid surface. In this state, the surface contact angle is greatly increased, making it easier for the droplet to roll down instead of spreading on the surface, avoiding the droplet from staying on the conductor surface for a long time, thereby reducing the risk of freezing.

[0050] The microstructure in this embodiment is one or more combination structures of V-shaped microstructure, trapezoidal microstructure, rectangular microstructure and arc-shaped microstructure; the geometric characteristics of the microstructure enable it to capture more air when in contact with droplets to form stable air pockets; V-shaped microstructures and trapezoidal microstructures are more likely to capture air when in contact with droplets due to their sharp tops and inclined sides; rectangular microstructures and arc-shaped microstructures provide stable support points through their flat or curved surfaces, so that air pockets can be evenly distributed between the droplets and the surface.

[0051] The contact angle 3-3 between the microstructure 3-2 and the droplet ranges from 150° to 160°: due to the reduction in the contact area between the droplet 3-4 and the surface of the microstructure 3-2, the contact angle 3-3 reaches 150° to 160°. This high contact angle 3-3 makes the droplet appear almost spherical on the surface, further enhancing the possibility of the droplet 3-4 rolling off.

[0052] The top angle of the V-shaped microstructure ranges from 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

[0053] Microstructures are categorized into super-hydrophobic, moderately hydrophobic, and generally hydrophobic types. Super-hydrophobic microstructures include: V-shaped microstructures with a top angle of 30° to 50°, a height of 100nm to 1000μm, and a bottom width of 50nm to 300μm; and trapezoidal microstructures with a top width of 50nm to 300μm, a bottom width of 100nm to 500μm, a height of 100nm to 750μm, and an inclination angle of 15° to 30°. The moderately hydrophobic microstructures include: a V-shaped microstructure with a top angle of 50° to 70°, a height of 50nm to 500μm, and a bottom width of 300nm to 750μm; a trapezoidal microstructure with a top width of 300nm to 500μm, a bottom width of 500nm to 1000μm, a height of 100nm to 500μm, and an inclination angle of 30° to 45°; a rectangular microstructure with a height of 100nm to 500μm and a width of 50nm to 500μm. General hydrophobic microstructures include: the top width of the trapezoidal microstructure is 500nm to 750μm, the bottom width is 750nm to 1000μm, the height is 50nm to 750μm, and the inclination angle is 30° to 45°; the height of the rectangular microstructure is 500μm to 1000μm, and the width is 500μm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and the arc height is 20nm to 300μm.

[0054] Preferably, the array period of the microstructure ranges from 100 nm to 1 mm. The cross-sectional dimensions of the high-voltage conductor body range from 1 mm to 50 mm. The material of the high-voltage conductor body is one of iron, aluminum, copper, and alloys thereof. The high-voltage conductor body is one of a single conductor with a circular, rectangular, or irregular cross-section and a stranded wire composed of multiple conductors with circular, rectangular, or irregular cross-sections. The functions of the microstructured conductor of the present invention include superhydrophobicity, superoleophobicity, anti-icing, anti-freezing rain, anti-rime, anti-fouling, and self-cleaning.

[0055] like Figure 3 As shown, an embodiment of the present invention further provides a method for preparing a microstructured wire, comprising the following steps:

[0056] Step S1, preparing a wire drawing die with a micro-nano structure on the inner hole surface;

[0057] In step S2, a wire drawing die having a micro-nano structure on the inner hole surface is used to control the wire drawing parameters during the process by the wire drawing nanoimprinting method. After the high-voltage wire body passes through the wire drawing die and undergoes plastic deformation, a microstructured wire with a ring array microstructure formed on the surface is finally obtained. Figure 3 The reference number 1 is the high-voltage conductor body 1 before drawing, the reference number 2 is the drawing die, and the reference number 3 is the microstructured conductor.

[0058] The material of the drawing die in step S1 is one of tungsten-based cemented carbide, titanium-based cemented carbide, chromium-based cemented carbide, die steel and polycrystalline diamond. The drawing parameters in the process of step S2 include drawing speed, drawing temperature, cooling rate, tensile force, lubrication method and tension. These parameters are controlled so that the high-voltage wire can completely imprint and replicate the micro-nano structure, ensuring the uniformity and consistency of the microstructure formed on the surface of the high-voltage wire body, and obtaining the required micro-structure wire. Among them, the drawing speed is: 1m / s~20m / s; the drawing temperature is: 20℃~400℃; the cooling rate is: 10℃ / s~100℃ / s; the tensile force is: 100N~10000N; the lubrication method is: dry lubrication, wet lubrication, emulsion lubrication; the tension is: 50N-500N; the aluminum wire: the drawing speed is: 5m / s~10m / s, the drawing temperature is: room temperature to 150℃, the cooling rate is: 20℃ / s~50℃ / s, the tensile force is: 500N~3kN, the tension is: 100N~200N; the copper wire: the drawing speed is: 10m / s~20m / s, the drawing temperature is: 20℃~200℃, the cooling rate is: 30℃ / s~80℃ / s, the tensile force is: 1kN~10kN, the tension is: 200N~500N.

[0059] In step S1, the micro-nanostructure on the inner hole surface of the wire drawing die is covered with a nano-diamond coating. In step S2, the microstructure array formed on the surface of the high-voltage conductor body has a periodicity range of 100nm to 1mm. The original shape of the high-voltage conductor body is circular, and the original size is 1.1 to 1.5 times the target size obtained by a single drawing, or 10 to 50 times the target size obtained by multiple drawing.

[0060] The microstructure is one or more combination structures of a V-shaped microstructure, a trapezoidal microstructure, a rectangular microstructure and an arc-shaped microstructure, wherein the top angle range of the V-shaped microstructure is 30° to 70°, the height is 50nm to 1000μm, and the bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, the bottom width is 100nm to 1000μm, the height is 50nm to 750μm, and the inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and the width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and the arc height is 20nm to 300μm.

[0061] Example 1

[0062] A method for preparing a microstructured conductor comprises the following steps:

[0063] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 2 mm.

[0064] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructures on the surface of the aluminum high-voltage wires are rectangular structures with a height of 150nm, a width of 75nm, and a period of 100nm. Figure 4 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 2 mm.

[0065] Example 2

[0066] A method for preparing a microstructured conductor comprises the following steps:

[0067] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 2 mm.

[0068] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructures on the surface of the aluminum high-voltage wires are V-shaped, with a height of 200nm, a width of 75nm, and an array period of 100nm. Figure 5The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 2 mm.

[0069] Example 3

[0070] A method for preparing a microstructured conductor comprises the following steps:

[0071] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 5 mm.

[0072] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructures on the surface of the high-voltage wires are V-shaped, with a height of 1500nm, a width of 600nm, and an array period of 800nm. Figure 6 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 5 mm.

[0073] Example 4

[0074] A method for preparing a microstructured conductor comprises the following steps:

[0075] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 10 mm.

[0076] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a V-shaped structure with a height of 20 μm, a width of 7.5 μm, and an array period of 10 μm. Figure 7 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 10 mm.

[0077] Example 5

[0078] A method for preparing a microstructured conductor comprises the following steps:

[0079] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 15 mm.

[0080] Step S2: Using the prepared wire drawing die, by controlling the wire drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the wire drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a V-shaped structure with a height of 100 μm, a width of 40 μm, and an array period of 50 μm. Figure 8 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 15 mm.

[0081] Example 6

[0082] A method for preparing a microstructured conductor comprises the following steps:

[0083] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 20 mm.

[0084] Step S2: Using the prepared wire drawing die, by controlling the wire drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the wire drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructures on the surface of the high-voltage wires are V-shaped, with a height of 100 μm, a width of 40 μm, and an array period of 100 μm. Figure 9 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 20 mm.

[0085] Example 7

[0086] A method for preparing a microstructured conductor comprises the following steps:

[0087] Step S1: Prepare a clean titanium-based cemented carbide wire drawing die with a circular cross-section. The micro-nanostructure on the inner hole of the die complements the microstructure to be prepared on the surface of the high-voltage conductor. The inner diameter is 25.1 mm. A nanodiamond coating is applied to the microstructure on the inner hole of the die using CVD and then polished to a thickness of 50 μm.

[0088] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare surface microstructured copper high-voltage wires. The copper high-voltage wires will completely replicate the micro-nanostructure of the inner hole surface of the drawing die, and the microstructure formed on the surface of the copper high-voltage wires has good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a V-shaped structure with a height of 50μm, a width of 40μm, and an array period of 200μm. Figure 10As shown in the figure, the cross-section of the high-voltage conductor is also circular, with a diameter of 25 mm.

[0089] Example 8

[0090] A method for preparing a microstructured conductor comprises the following steps:

[0091] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 30 mm.

[0092] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a V-shaped structure with a height of 50μm, a width of 40μm, and an array period of 300μm. Figure 11 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 30 mm.

[0093] Example 9

[0094] A method for preparing a microstructured conductor comprises the following steps:

[0095] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 40 mm.

[0096] Step S2: Using the prepared wire drawing die, by controlling the wire drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the wire drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a V-shaped structure with a height of 50 μm, a width of 40 μm, and an array period of 1000 μm. Figure 12 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 40 mm.

[0097] Example 10

[0098] A method for preparing a microstructured conductor comprises the following steps:

[0099] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0100] Step S2: Using the prepared wire drawing die, by controlling the wire drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the wire drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a trapezoidal structure with a height of 150nm and an array period of 100nm. Figure 13 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0101] Example 11

[0102] A method for preparing a microstructured conductor comprises the following steps:

[0103] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0104] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a trapezoidal structure with a height of 1 μm and an array period of 1 μm. Figure 14 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0105] Example 12

[0106] A method for preparing a microstructured conductor comprises the following steps:

[0107] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0108] Step S2: Using the prepared drawing die, by controlling the drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructure on the surface of the high-voltage wires is a trapezoidal structure with a height of 10 μm and an array period of 10 μm. Figure 15 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0109] Example 13

[0110] A method for preparing a microstructured conductor comprises the following steps:

[0111] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section, the micro-nano structure of the inner hole surface of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0112] Step S2: Using the prepared wire drawing die, by controlling the wire drawing parameters, continuously prepare aluminum high-voltage wires with surface microstructures. The aluminum high-voltage wires will completely replicate the micro-nanostructures on the inner hole surface of the wire drawing die, and the microstructures formed on the surface of the aluminum high-voltage wires have good uniformity and consistency, thus obtaining the desired microstructured wires. The microstructures on the surface of the high-voltage wires are arc-shaped structures with a height of 125 μm, a radius of 80 μm, and an array period of 200 μm. Figure 16 The cross-section of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0113] The properties of the microstructured wire of the present invention are as follows: (1) Hydrophobicity: Figure 17 As shown in Figure 2, the water contact angle of the microstructured conductor is 149.8°; (2) Anti-icing performance: Figure 18 As shown in the figure, the icing performance of aluminum plates with and without surface microstructures was compared. It can be seen that no icing occurred on the surface with microstructures, while icing occurred on the edge surface without microstructures.

[0114] The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited to this. Any modifications, equivalent substitutions and improvements made by any technician familiar with this technical field within the technical scope disclosed by the present invention and within the spirit and principles of the present invention should be covered by the scope of protection of the present invention; ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope defined by the claims.

Claims

1. A microstructured wire, characterized in that: The invention comprises a high-voltage conductor body and an annular array of microstructures on the surface of the high-voltage conductor body. The microstructures are prepared based on the Cassie-Baxter model. When a droplet contacts the microstructured surface, the droplet can be suspended on the air pockets above the microstructures. This suspended state significantly reduces the actual contact area between the droplet and the surface of the microstructured conductor, thereby greatly improving the hydrophobicity of the microstructured conductor surface. The Cassie-Baxter state of the microstructure: when the droplet contacts the surface, if the microstructures exist on the surface, these microstructures can capture air and form multiple small air pockets. The droplet is suspended on these small air pockets instead of completely wetting the solid surface. In this state, the surface contact angle is greatly increased, making it easier for the droplet to roll off rather than spread on the surface, preventing the droplet from staying on the conductor surface for a long time, thereby reducing the risk of freezing. The microstructure is one or a combination of V-shaped microstructures, trapezoidal microstructures, rectangular microstructures, and arc-shaped microstructures; the geometric characteristics of the microstructure enable it to capture more air when in contact with a liquid droplet, forming a stable air pocket; the V-shaped microstructure and the trapezoidal microstructure are more likely to capture air when in contact with a liquid droplet due to their sharp tops and inclined sides; the rectangular microstructure and the arc-shaped microstructure provide stable support points through flat or curved surfaces, so that the air pockets can be evenly distributed between the liquid droplet and the surface; The contact angle between the microstructure and the droplet is in the range of 150° to 160°: due to the reduced contact area between the droplet and the microstructure surface, the contact angle reaches 150° to 160°. This high contact angle makes the droplet appear almost spherical on the surface, further enhancing the possibility of the droplet rolling off. The top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

2. The microstructured wire according to claim 1, characterized in that: The array period of the microstructure is in the range of 100 nm to 1 mm.

3. The microstructured wire according to claim 1, characterized in that: The cross-sectional size of the high-voltage conductor body ranges from 1 mm to 50 mm.

4. The microstructured wire according to claim 1, characterized in that: The material of the high-voltage conductor body is one of iron, aluminum, copper and alloys thereof.

5. The microstructured wire according to claim 1, characterized in that: The high-voltage conductor body is one of a single conductor with a circular, rectangular or special-shaped cross section and a stranded wire composed of multiple conductors with circular, rectangular or special-shaped cross sections.

6. A method for preparing a microstructured conductor according to claim 1, characterized in that: The following steps are involved: Step S1, preparing a wire drawing die with a micro-nano structure on the inner hole surface; In step S2, a wire drawing die having a micro-nano structure on the inner hole surface is used to control the wire drawing parameters during the process by the wire drawing nanoimprinting method. After the high-voltage wire body passes through the wire drawing die and undergoes plastic deformation, a microstructured wire with a ring array microstructure formed on the surface is finally obtained.

7. The method for preparing a microstructured wire according to claim 6, wherein: The material of the drawing die in step S1 is one of tungsten-based cemented carbide, titanium-based cemented carbide, chromium-based cemented carbide, die steel and polycrystalline diamond. The drawing parameters in the process of step S2 include drawing speed, drawing temperature, cooling rate, tensile force, lubrication method and tension. These parameters are controlled so that the high-voltage wire can completely imprint and replicate the micro-nano structure, ensuring the uniformity and consistency of the microstructure formed on the surface of the high-voltage wire body, and obtaining the required microstructure wire; wherein, the drawing speed is: 1m / s~20m / s; the drawing temperature is: 20℃~400℃; the cooling rate is: 10℃ / s~100 ℃ / s; tensile force: 100N~10000N; lubrication method: dry lubrication, wet lubrication, emulsion lubrication; tension: 50N-500N; aluminum wire: drawing speed: 5m / s to 10m / s, drawing temperature: room temperature to 150℃, cooling rate: 20℃ / s to 50℃ / s, tensile force: 500N to 3kN, tension: 100N to 200N; copper wire: drawing speed: 10m / s to 20m / s, drawing temperature: 20℃ to 200℃, cooling rate: 30℃ / s to 80℃ / s, tensile force: 1kN to 10kN, tension: 200N to 500N.

8. The method for preparing a microstructured wire according to claim 6, wherein: In step S1, the micro-nano structure on the inner hole surface of the drawing die is covered with a layer of nano-diamond coating.

9. The method for preparing a microstructured wire according to claim 6, wherein: In step S2, the microstructure array period range of the annular array formed on the surface of the high-voltage wire body is 100nm~1mm, the original shape of the high-voltage wire body is circular, and the original size is 1.1~1.5 times the target size obtained by single drawing or 10~50 times the target size obtained by multiple drawing.

10. The method for preparing a microstructured wire according to claim 9, characterized in that: The microstructure is one or more combination structures of a V-shaped microstructure, a trapezoidal microstructure, a rectangular microstructure and an arc-shaped microstructure, wherein the top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

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