Epitaxial structure of semiconductor laser chip

Abstract

The epitaxial structure sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a hole Fermi surface regulation and control layer is arranged between the upper limiting layer and the upper waveguide layer; the cavity Fermi noodle regulation and control layer comprises a first cavity Fermi noodle regulation and control layer, a second cavity Fermi noodle regulation and control layer and a third cavity Fermi noodle regulation and control layer; the thermal conductivity distribution of the first hole Fermi surface regulation and control layer has curve distribution of a function y = A + B * arccosx; the thermal conductivity distribution of the second hole Fermi surface regulation and control layer has curve distribution of a function y = C + D * lnx-x + 1; and the thermal conductivity distribution of the third hole Fermi surface regulation and control layer has second three-quadrant curve distribution of a function y = E + F * ex + G * cosx. According to the invention, the Fermi rate is high, the Fermi can pass through a valence band to form a hole Fermi surface, the p-type doping ionization efficiency is improved, non-ionized Mg acceptor impurities are reduced, the hole concentration is improved, and the internal optical loss is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to an epitaxial structure of a semiconductor laser chip. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The optical waveguide has high absorption loss. Intrinsic carbon impurities in p-type semiconductors will compensate for acceptors and destroy p-type, etc. The ionization rate of p-type doping is low. A large amount of unionized Mg acceptor impurities will cause internal optical losses to increase. In addition, the refractive index of the laser is dispersed. The high-concentration carrier concentration fluctuations affect the refractive index of the active layer. The limitation factor decreases with increasing wavelength, resulting in a decrease in the mode gain of the laser.

[0010] 2) The activation energy of the Mg acceptor in p-type semiconductors is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, holes overflow the active layer, and other problems. The hole injection is uneven and the efficiency is low, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency. Summary of the invention

[0011] The present invention proposes an epitaxial structure of a semiconductor laser chip, wherein the hole Fermi surface regulating layer has a faster Fermi rate, and the Fermi energy crosses the valence band to form a hole Fermi surface, thereby improving the ionization efficiency of p-type doping, reducing unionized Mg acceptor impurities, increasing the hole concentration and reducing internal optical losses.

[0012] The epitaxial structure of a semiconductor laser chip provided by the present invention comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein a hole Fermi surface regulation layer is provided between the upper confinement layer and the upper waveguide layer; the hole Fermi surface regulation layer comprises a first hole Fermi surface regulation layer, a second hole Fermi surface regulation layer, and a third hole Fermi surface regulation layer.

[0013] Preferably, the thermal conductivity distribution of the first hole Fermi surface regulation layer has a function y=A+B*arccosx curve distribution; the thermal conductivity distribution of the second hole Fermi surface regulation layer has a function y=C+D*lnx-x+1 curve distribution; the thermal conductivity distribution of the third hole Fermi surface regulation layer has a function y=E+F*e x +G*cosx second three-quadrant curve distribution, where A, B, C, D, E, F, G are arbitrary values, and C≤A≤E; the thermal conductivity of the first hole Fermi surface regulation layer is d, the thermal conductivity of the second hole Fermi surface regulation layer is e, and the thermal conductivity of the third hole Fermi surface regulation layer is f, where: 10<d<f<e<0.1(W / cm -1 s).

[0014] Preferably, the conduction band effective state density distribution of the first hole Fermi surface regulation layer has a function y=H+J*lnx-e xCurve distribution; The conduction band effective state density distribution of the second hole Fermi surface regulation layer has a function y=M+L*e -x +x-1 curve distribution; the conduction band effective state density distribution of the third hole Fermi surface regulation layer has a function y=N+P*lnx-x+1 curve distribution, wherein H, J, M, L, N, P are arbitrary values, and M≤H≤N.

[0015] Preferably, the conduction band effective state density of the first hole Fermi surface control layer is g, the conduction band effective state density of the second hole Fermi surface control layer is h, and the conduction band effective state density of the third hole Fermi surface control layer is i, wherein: 5E16<h<g<i<5E19(cm -3 ).

[0016] Preferably, the spontaneous polarization coefficient distribution of the first hole Fermi surface control layer has a function y=Q+R*ln(x+1)-e x Curve distribution, where Q and R are arbitrary values; the spontaneous polarization coefficient distribution of the second hole Fermi surface control layer has a function y=T+e -x +e x Curve distribution; The spontaneous polarization coefficient distribution of the third hole Fermi surface control layer has a function y=U+e x -V*cosx second three-quadrant curve distribution; T, U, Q, V are arbitrary values, and T≤Q≤U; the spontaneous polarization coefficient of the first hole Fermi surface regulation layer is j, the spontaneous polarization coefficient of the second hole Fermi surface regulation layer is k, and the spontaneous polarization coefficient of the third hole Fermi surface regulation layer is l, wherein: -0.2<k<j<l<-0.01(C / m 2 ).

[0017] Preferably, the bandgap width distribution of the first hole Fermi surface control layer has a function y=W+x 2 -e x Curve distribution; The bandgap width distribution of the second hole Fermi surface control layer has a function y=S+lnx-e x Curve distribution; the bandgap width distribution of the third hole Fermi surface regulation layer has a first quadrant curve distribution of the function y=K+x / lnx; wherein W, S, and K are arbitrary values, and W≤K≤S; the bandgap width of the first hole Fermi surface regulation layer is m, the bandgap width of the second hole Fermi surface regulation layer is n, and the bandgap width of the third hole Fermi surface regulation layer is p, wherein: 0.1<m<p<n<10(eV).

[0018] Preferably, the hole Fermi surface regulation layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0019] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0020] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0021] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0022] Compared with the prior art, an epitaxial structure of a semiconductor laser chip provided in an embodiment of the present invention has the following beneficial effects: the hole Fermi surface regulation layer has a faster Fermi rate, the Fermi energy crosses the valence band to form a hole Fermi surface, thereby improving the ionization efficiency of p-type doping, reducing unionized Mg acceptor impurities, increasing the hole concentration and reducing internal optical losses; at the same time, the momentum space of the hole Fermi surface regulation layer produces Fermi surface spin splitting, and a ring-shaped spin resonance peak, a spiral structure energy band and a surface wave Fermi arc are formed in the center of the Brillouin zone, thereby reducing the activation energy of the Mg acceptor, improving the hole mobility and transport efficiency, enhancing the uniformity of carrier injection into the active layer, improving the gain uniformity, reducing the threshold current and improving the slope efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a schematic structural diagram of an epitaxial structure of a semiconductor laser chip according to an embodiment of the present invention;

[0024] Figure 2 It is a SIMS secondary ion mass spectrum of an epitaxial structure of a semiconductor laser chip according to an embodiment of the present invention;

[0025] Reference numerals: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: upper confinement layer, 106: hole Fermi surface control layer. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] In order to solve the above problems, the epitaxial structure of a semiconductor laser chip provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0028] Reference Figure 1-2The epitaxial structure of a semiconductor laser chip provided by the present invention includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, wherein a hole Fermi surface control layer 106 is provided between the upper confinement layer 105 and the upper waveguide layer 104; the hole Fermi surface control layer 106 includes a first hole Fermi surface control layer, a second hole Fermi surface control layer, and a third hole Fermi surface control layer.

[0029] The thermal conductivity distribution of the first hole Fermi surface regulation layer has a function y=A+B*arccosx curve distribution; the thermal conductivity distribution of the second hole Fermi surface regulation layer has a function y=C+D*lnx-x+1 curve distribution; the thermal conductivity distribution of the third hole Fermi surface regulation layer has a function y=E+F*e x +G*cosx second three-quadrant curve distribution, where A, B, C, D, E, F, G are arbitrary values, and C≤A≤E; the thermal conductivity of the first hole Fermi surface regulation layer is d, the thermal conductivity of the second hole Fermi surface regulation layer is e, and the thermal conductivity of the third hole Fermi surface regulation layer is f, where: 10<d<f<e<0.1(W / cm -1 s).

[0030] The conduction band effective state density distribution of the first hole Fermi surface regulation layer has a function y=H+J*lnx-e x Curve distribution; The conduction band effective state density distribution of the second hole Fermi surface regulation layer has a function y=M+L*e -x +x-1 curve distribution; the conduction band effective state density distribution of the third hole Fermi surface regulation layer has a function y=N+P*lnx-x+1 curve distribution, wherein H, J, M, L, N, P are arbitrary values, and M≤H≤N.

[0031] The conduction band effective state density of the first hole Fermi surface control layer is g, the conduction band effective state density of the second hole Fermi surface control layer is h, and the conduction band effective state density of the third hole Fermi surface control layer is i, wherein: 5E16<h<g<i<5E19(cm -3 ).

[0032] The spontaneous polarization coefficient distribution of the first hole Fermi surface control layer has a function y=Q+R*lnx+1-e x Curve distribution, where Q and R are arbitrary values; the spontaneous polarization coefficient distribution of the second hole Fermi surface control layer has a function y=T+e -x +e x Curve distribution; The spontaneous polarization coefficient distribution of the third hole Fermi surface control layer has a function y=U+e x-V*cosx second three-quadrant curve distribution; T, U, Q, V are arbitrary values, and T≤Q≤U; the spontaneous polarization coefficient of the first hole Fermi surface regulation layer is j, the spontaneous polarization coefficient of the second hole Fermi surface regulation layer is k, and the spontaneous polarization coefficient of the third hole Fermi surface regulation layer is l, wherein: -0.2<k<j<l<-0.01(C / m 2 ).

[0033] The bandgap width distribution of the first hole Fermi surface control layer has a function y=W+x 2 -e x Curve distribution; The bandgap width distribution of the second hole Fermi surface control layer has a function y=S+lnx-e x Curve distribution; the bandgap width distribution of the third hole Fermi surface regulation layer has a first quadrant curve distribution of the function y=K+x / lnx; wherein W, S, and K are arbitrary values, and W≤K≤S; the bandgap width of the first hole Fermi surface regulation layer is m, the bandgap width of the second hole Fermi surface regulation layer is n, and the bandgap width of the third hole Fermi surface regulation layer is p, wherein: 0.1<m<p<n<10(eV).

[0034] The hole Fermi surface regulation layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0035] The hole Fermi surface control layer 106 has a faster Fermi rate, and the Fermi energy crosses the valence band to form a hole Fermi surface, improves the ionization efficiency of p-type doping, reduces unionized Mg acceptor impurities, increases hole concentration and reduces internal optical losses. At the same time, the momentum space of the hole Fermi surface control layer produces Fermi surface spin splitting, and a ring spin resonance peak, a spiral structure energy band and a surface wave Fermi arc are formed in the center of the Brillouin zone, which reduces the activation energy of the Mg acceptor, improves the hole mobility and transport efficiency, enhances the uniformity of carrier injection into the active layer, improves the gain uniformity, reduces the threshold current and improves the slope efficiency. As shown in the following table:

[0036]

[0037]

[0038] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. any one or any combination thereof, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0039] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0040] In the present invention, the substrate 100 is sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0041] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. An epitaxial structure of a semiconductor laser chip, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A hole Fermi surface control layer (106) is provided between the upper confinement layer (105) and the upper waveguide layer (104); the hole Fermi surface control layer (106) comprises a first hole Fermi surface control layer, a second hole Fermi surface control layer and a third hole Fermi surface control layer.

2. The epitaxial structure of a semiconductor laser chip according to claim 1, characterized in that: The thermal conductivity distribution of the first hole Fermi surface regulation layer has a function y=A+B*arccosx curve distribution; the thermal conductivity distribution of the second hole Fermi surface regulation layer has a function y=C+D*lnx-x+1 curve distribution; the thermal conductivity distribution of the third hole Fermi surface regulation layer has a function y=E+F*e x +G*cosx second three-quadrant curve distribution, where A, B, C, D, E, F, G are arbitrary values, and C≤A≤E; the thermal conductivity of the first hole Fermi surface regulation layer is d, the thermal conductivity of the second hole Fermi surface regulation layer is e, and the thermal conductivity of the third hole Fermi surface regulation layer is f, where: 10<d<f<e<0.1(W / cm -1 s).

3. The epitaxial structure of a semiconductor laser chip according to claim 2, characterized in that: The conduction band effective state density distribution of the first hole Fermi surface regulation layer has a function y=H+J*lnx-e x Curve distribution; The conduction band effective state density distribution of the second hole Fermi surface regulation layer has a function y=M+L*e -x +x-1 curve distribution; the conduction band effective state density distribution of the third hole Fermi surface regulation layer has a function y=N+P*lnx-x+1 curve distribution, wherein H, J, M, L, N, P are arbitrary values, and M≤H≤N.

4. The epitaxial structure of a semiconductor laser chip according to claim 3, characterized in that: The conduction band effective state density of the first hole Fermi surface control layer is g, the conduction band effective state density of the second hole Fermi surface control layer is h, and the conduction band effective state density of the third hole Fermi surface control layer is i, wherein: 5E16<h<g<i<5E19(cm -3 ).

5. The epitaxial structure of a semiconductor laser chip according to claim 2, characterized in that: The spontaneous polarization coefficient distribution of the first hole Fermi surface control layer has a function y=Q+R*ln(x+1)-e x Curve distribution, where Q and R are arbitrary values; the spontaneous polarization coefficient distribution of the second hole Fermi surface control layer has a function y=T+e -x +e x Curve distribution; The spontaneous polarization coefficient distribution of the third hole Fermi surface control layer has a function y=U+e x -V*cosx second three-quadrant curve distribution; T, U, Q, V are arbitrary values, and T≤Q≤U; the spontaneous polarization coefficient of the first hole Fermi surface regulation layer is j, the spontaneous polarization coefficient of the second hole Fermi surface regulation layer is k, and the spontaneous polarization coefficient of the third hole Fermi surface regulation layer is l, wherein: -0.2<k<j<l<-0.01(C / m 2 ).

6. The epitaxial structure of a semiconductor laser chip according to claim 2, characterized in that: The bandgap width distribution of the first hole Fermi surface control layer has a function y=W+x 2 -e x Curve distribution; The bandgap width distribution of the second hole Fermi surface control layer has a function y=S+lnx-e x Curve distribution; the bandgap width distribution of the third hole Fermi surface regulation layer has a first quadrant curve distribution of the function y=K+x / lnx; wherein W, S, and K are arbitrary values, and W≤K≤S; the bandgap width of the first hole Fermi surface regulation layer is m, the bandgap width of the second hole Fermi surface regulation layer is n, and the bandgap width of the third hole Fermi surface regulation layer is p, wherein: 0.1<m<p<n<10(eV).

7. The epitaxial structure of a semiconductor laser chip according to claim 1, characterized in that: The hole Fermi surface regulation layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

8. The epitaxial structure of a semiconductor laser chip according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

9. The epitaxial structure of a semiconductor laser chip according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

10. The epitaxial structure of a semiconductor laser chip according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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