Cubic boron nitride film structure, cutting tool and method and apparatus for manufacturing the same

Abstract

The application relates to a thin film structure, a cubic boron nitride thin film structure, a cutting tool and a manufacturing method and equipment thereof, the thin film structure comprising a preliminary bonding layer-intermediate bonding layer-NCD; wherein the preliminary bonding layer comprises one of CrN and TiN; and the intermediate bonding layer comprises at least one of an oxidation thin film and a nitrogen-oxygen thin film. The preliminary bonding layer such as chromium nitride or titanium nitride is combined with the intermediate bonding layer to bond nanometer polycrystal diamond, under the premise of the hardness of the nanometer polycrystal diamond, so that the cobalt element of the related tool such as a hard alloy surface cannot affect the thin film formed by the nanometer polycrystal diamond, thereby the cobalt element on the surface of the hard alloy is not removed, and under the premise of keeping the smoothness of the tool surface, the process of removing the cobalt element on the surface of the hard alloy by using chemical liquid is avoided, and therefore the application has the advantages of simple process and small pollution.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of thin film processing, and in particular to a thin film structure, cubic boron nitride thin film structure, cutting tool and manufacturing method and equipment thereof. BACKGROUND

[0002] The surface of a cutting tool, such as a cutting tool, usually needs to be deposited with a hard film. The key to whether the thin film can be applied to cutting is whether the thin film is firmly combined with the substrate of the cutting tool. The thin film with poor combination has no practical value. The substrate of the cutting tool is mostly high-speed steel and hard alloy. If nano-polycrystalline diamond (NCD) is directly deposited, the carbon atoms of the nano-polycrystalline diamond and the iron atoms of the high-speed steel, or the cobalt atoms in the hard alloy, will chemically react at high temperature, decompose the structure of the diamond, and eventually cause the failure of the nano-polycrystalline diamond film.

[0003] The traditional method is to first remove the cobalt element on the surface of the tool with a chemical solution, and then deposit the nano-polycrystalline diamond film. For example, Murakami's Solution uses 10g K3(CN)6+10g KOH+100mL H2O for 10 minutes, and then uses Caro's acid, including 3mL H2SO4(96%)+88mL H2O2(30%) for 10 seconds, to remove the cobalt element on the surface of the hard alloy. This is done to prevent the presence of cobalt from causing carbon to form an SP2 graphite structure, which prevents the formation of an SP3 diamond structure.

[0004] However, this method inevitably causes the surface of the tool to be rough, directly affecting the smoothness of the surface after the deposition of the nano-polycrystalline diamond, and the process is complicated and the chemical waste water is severely polluted. SUMMARY

[0005] Therefore, it is necessary to provide a thin film structure, cubic boron nitride thin film structure, cutting tool and manufacturing method and equipment thereof.

[0006] In one embodiment, a thin film structure includes a preliminary bonding layer-intermediate bonding layer-NCD; wherein,

[0007] The preliminary bonding layer includes one of CrN and TiN;

[0008] The intermediate bonding layer includes at least one of an oxide film and an oxynitride film.

[0009] The thin film structure adopts a preliminary bonding layer such as chromium nitride or titanium nitride to cooperate with an intermediate bonding layer and then bond nanocrystalline diamond, and under the premise of having the hardness of nanocrystalline diamond, the cobalt element on the surface of the tool such as the hard alloy does not affect the thin film formed by the nanocrystalline diamond, so that the cobalt element on the surface of the hard alloy does not need to be removed, and under the premise of maintaining the smoothness of the tool surface, the process of removing the cobalt element on the surface of the hard alloy by using chemical liquid is avoided, so that the process is simple and the pollution is small.

[0010] In one of the embodiments, the thin film structure further comprises cBN, forming a preliminary bonding layer-intermediate bonding layer-NCD-cBN thin film.

[0011] In one of the embodiments, a cubic boron nitride thin film structure comprises a preliminary bonding layer-intermediate bonding layer-NCD-cBN; wherein,

[0012] The preliminary bonding layer comprises one of CrN and TiN;

[0013] The intermediate bonding layer comprises at least one of an oxide thin film and an oxynitride thin film.

[0014] In one of the embodiments, the intermediate bonding layer comprises at least one of AlCrON, AlCrO and AlCrSiON.

[0015] In one of the embodiments, a cutting tool comprises a cutting tool substrate and the thin film structure of any one of the embodiments, and the thin film structure is arranged on the cutting tool substrate.

[0016] In one of the embodiments, a manufacturing method of a cutting tool comprises the steps of:

[0017] providing a cutting tool substrate;

[0018] forming a preliminary bonding layer on the cutting tool substrate by using an arc evaporation method; wherein the preliminary bonding layer comprises one of CrN and TiN;

[0019] forming an intermediate bonding layer on the preliminary bonding layer by using an arc evaporation method; wherein the intermediate bonding layer comprises at least one of an oxide thin film and an oxynitride thin film;

[0020] forming a nanocrystalline diamond thin film layer on the intermediate bonding layer by using a microwave chemical deposition method.

[0021] In one of the embodiments, the manufacturing method of the cutting tool further comprises the steps of: forming a cubic boron nitride thin film layer on the nanocrystalline diamond thin film layer by using a high-power pulse magnetron sputtering method; and / or the intermediate bonding layer comprises at least one of AlCrON, AlCrO and AlCrSiON.

[0022] In one of the embodiments, the manufacturing method of the cutting tool further comprises the step of cleaning the cutting tool substrate by using a plasma method.

[0023] In one of the embodiments, a manufacturing device of a cutting tool comprises a vacuum furnace, a heating device, a vacuum device, a high-power pulsed sputtering device, an arc evaporation device, a microwave generating device, a pulsed bias device, a gas flow control device and a temperature control device.

[0024] The heating device, the vacuum device, the high-power pulsed sputtering device, the arc evaporation device, the microwave generating device, the pulsed bias device, the gas flow control device and the temperature control device are at least partially arranged in the inner cavity of the vacuum furnace.

[0025] The heating device is used for heating the inner cavity.

[0026] The vacuum device is used for vacuumizing the inner cavity and detecting the vacuum degree.

[0027] The target of the high-power pulsed sputtering device, the target of the arc evaporation device and the output end of the microwave generating device are arranged in the inner cavity.

[0028] The pulsed bias device is electrically connected with the high-power pulsed sputtering device, the arc evaporation device and the microwave generating device respectively.

[0029] The gas flow control device is used for inputting gas into the inner cavity.

[0030] The temperature control device is electrically connected with the heating device and is used for controlling the temperature of the inner cavity.

[0031] In one of the embodiments, the arc evaporation device is provided with one or two arc targets, which are used for depositing a preliminary bonding layer and an intermediate bonding layer; wherein the preliminary bonding layer comprises one of CrN and TiN, and the intermediate bonding layer comprises at least one of an oxide film and a nitride oxide film.

[0032] The microwave generating device is provided with at least one microwave guide, which is used for depositing a nano-polycrystalline diamond film.

[0033] The high-power pulsed sputtering device is provided with one or two high-power pulsed sputtering targets, which are used for depositing a cubic boron nitride film.

[0034] In one of the embodiments, the inner wall of the vacuum furnace is provided with a cold water pipeline; or,

[0035] The arc evaporation device is provided with an arc pure chromium and pure titanium target and an arc aluminum silicon target; or,

[0036] The high-power pulse sputtering device is equipped with a pure boron sputtering target; or...

[0037] The temperature control device is equipped with a furnace temperature control system and a cold water control system. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic flowchart of an embodiment of the manufacturing method of the cutting tool described in this application.

[0040] Figure 2 This is a schematic flowchart illustrating another embodiment of the manufacturing method of the cutting tool described in this application.

[0041] Figure 3 This is a schematic diagram of an embodiment of the manufacturing equipment for the cutting tool described in this application.

[0042] Figure 4 for Figure 3 Another state diagram of the embodiment shown.

[0043] Figure 5 This is a schematic diagram of another embodiment of the manufacturing equipment for the cutting tool described in this application.

[0044] Figure 6 for Figure 5 Another schematic diagram of the embodiment shown.

[0045] Figure 7 for Figure 6 Another state diagram of the embodiment shown.

[0046] Figure 8 for Figure 6 A perspective view of the embodiment shown.

[0047] Figure 9 for Figure 5 Another schematic diagram of the embodiment shown.

[0048] Figure 10 for Figure 9 An exploded view of the embodiment shown.

[0049] Figure 11 This is an electron microscope image of an embodiment of the cutting tool described in this application.

[0050] Figure 12 for Figure 11 The nanohardness test results of the embodiment shown are illustrated.

[0051] Figure 13 for Figure 11 The FTIR detection pattern of the illustrated embodiment.

[0052] Figure reference numerals: 1. Stainless steel vacuum furnace; 2. Tool holder turntable; 3. Tool holder; 4. Molecular pump and vacuum system; 5. Heating element; 6. Reactive gas inlet pipe; 7. Vacuum furnace door hinge; 8. Furnace door; 9. Arc-shaped rectangular pure chromium / titanium target; 10. Arc-shaped rectangular aluminum-silicon target; 11. Door handle; 12. Cylindrical sputtering pure boron target; 13. Microwave extractor; 14. Microwave conduit; 15. Microwave master tube; 16. Microwave generator; 17. Bias pulse power supply; 18. H iPIMS sputtering power supply, arc pulse power supply for targets 19 and 9, arc pulse power supply for targets 20 and 10, PLC automation control system, panel-type industrial control computer, low-voltage electrical cabinet housing, Penning vacuum gauge, Pinari vacuum gauge, gearbox, turntable motor, inner cavity, cemented carbide, transition layer, nano-polycrystalline diamond layer, cubic boron nitride layer. Detailed Implementation

[0053] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0054] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on the other component or there may be an intermediate component. When a component is considered to be "connected to" another component, it can be directly connected to the other component or there may be an intermediate component present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application's specification are for illustrative purposes only and do not represent the only possible implementation.

[0055] In addition, the terms "first", "second", etc. are used herein only to describe different instances, and are not used to denote or imply relative importance or a number of indications of the technical features indicated. Thus, the technical features defined with "first", "second", etc. can explicitly or implicitly include at least one of the technical features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly and specifically limited.

[0056] In the present application, unless otherwise explicitly specified and limited, the "on", "under", "above" and "over" of the first feature to the second feature can be that the first feature is in direct contact with the second feature, or the first feature is indirectly in contact with the second feature through an intermediate medium. Moreover, the "on", "above" and "over" of the first feature to the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the first feature is higher in horizontal height than the second feature. The "under", "below" and "under" of the first feature to the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the first feature is lower in horizontal height than the second feature.

[0057] Unless otherwise defined, all technical and scientific terms used in the specification of the present application have the same meaning as understood by a person skilled in the art to which the present application belongs. The terms used in the specification of the present application are only for the purpose of describing the specific embodiments, and are not intended to limit the present application. The term "and / or" used in the specification of the present application includes any and all combinations of one or more of the related listed items.

[0058] The present application discloses a thin film structure, cubic boron nitride thin film structure, cutting tool and its manufacturing method and equipment, which includes part or all of the technical features of the following embodiments; that is, the thin film structure, cubic boron nitride thin film structure, cutting tool and its manufacturing equipment include part or all of the following structures. In an embodiment of the present application, a thin film structure includes a preliminary bonding layer-intermediate bonding layer-NCD; wherein the preliminary bonding layer includes one of CrN and TiN; and the intermediate bonding layer includes at least one of an oxide film and an oxynitride film. The above-mentioned thin film structure uses a preliminary bonding layer such as chromium nitride or titanium nitride to combine with an intermediate bonding layer and then combine with nanocrystalline diamond, which has a hardness of nanocrystalline diamond, so that the cobalt element on the surface of the related tool such as cemented carbide does not affect the thin film formed by the nanocrystalline diamond, thereby eliminating the need to remove the cobalt element on the surface of the cemented carbide, and thus avoiding the process of removing the cobalt element on the surface of the cemented carbide by using chemical liquid, thereby having the advantages of simple process and small pollution. The following will be described in detail in combination with the drawings. Figures 1 to 13 The thin film structure, cutting tool and its manufacturing method and system will be described in detail.

[0059] In one embodiment, a thin film structure includes a preliminary bonding layer-intermediate bonding layer-NCD; that is, the bottom layer is the preliminary bonding layer, the preliminary bonding layer is above the intermediate bonding layer, and the intermediate bonding layer is above the NCD; that is, the thin film structure includes a preliminary bonding layer, an intermediate bonding layer, and an NCD layer in sequence, and the preliminary bonding layer is used for bonding or adhering to the substrate. In this embodiment, the preliminary bonding layer includes one of chromium nitride (CrN) and titanium nitride (TiN), and the CrN layer is a chromium nitride film, and the NCD layer is a polycrystalline diamond film. In each embodiment, the intermediate bonding layer includes at least one of an oxide film and an oxynitride film, and the intermediate bonding layer is used to bond the NCD film to the cutting tool substrate. In this design, the oxide film or the oxynitride film is used as the intermediate bonding layer, and the chromium nitride or the titanium nitride is used as the preliminary bonding layer of the intermediate bonding layer of the cutting tool, which is beneficial to enhancing the adhesion and ensuring the isolation degree. In combination with the oxide film or the oxynitride film as the intermediate bonding layer of the cutting tool and the polycrystalline diamond, the isolation condition of the nanocrystalline diamond film and the cutting tool is further ensured, so that the chemical solution is not required to remove the cobalt element in the film forming process, and the diamond powder is not required to be soaked, and the nanocrystalline diamond film or the polycrystalline diamond film can be directly deposited, so that the surface smoothness of the cutting tool after coating is maintained, and the chemical solution with harmful environment is reduced.

[0060] In one embodiment, the intermediate bonding layer includes at least one of AlCrON, AlCrO, and AlCrSiON. As an example, the intermediate bonding layer is AlCrON, AlCrO, or AlCrSiON, and the intermediate bonding layer is AlCrSiON, that is, oxynitride silicon chromium aluminum, and the thin film structure includes chromium nitride-oxynitride silicon chromium aluminum-nanocrystalline diamond. The remaining embodiments are similar, and details are not repeated. In each embodiment, the thin film structure includes a plurality of thin films, and can also be referred to as a multi-layer thin film, a multi-layer thin film structure, or a composite thin film layer. Due to the design of the intermediate bonding layer combined with CrN or TiN, the cobalt element on the surface of the hard alloy does not affect the thin film formed by the nanocrystalline diamond, so that the surface of the hard alloy can be combined with the thin film formed by the nanocrystalline diamond through the intermediate bonding layer combined with CrN or TiN without removing the cobalt element on the surface of the hard alloy, thereby having the hardness of the nanocrystalline diamond.

[0061] On the basis of the above-mentioned embodiments, cBN film can be additionally added to the NCD film. Specifically, in one of the embodiments, the film structure further comprises cBN, forming a CrN-intermediate bonding layer-NCD-cBN film. Alternatively, in one of the embodiments, a cubic boron nitride film structure comprises a preliminary bonding layer CrN-intermediate bonding layer-NCD-cBN; wherein the preliminary bonding layer comprises one of CrN and TiN; and the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film. In one of the embodiments, a cubic boron nitride film structure comprises CrN-intermediate bonding layer-NCD-cBN, forming a CrN-intermediate bonding layer-NCD-cBN film; wherein the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film. In this way, according to different product requirements, it can be considered whether to additionally add a cBN film, i.e., a cBN film layer. Generally, the function of the polycrystalline diamond film can only process non-ferrous alloys, such as aluminum, titanium, magnesium alloys, etc. Although diamond is the hardest material, due to its structure composed of carbon elements, the carbon elements of diamond and iron will produce a chemical reaction at high temperature processing, becoming Fe3C, which is equivalent to decomposing diamond, and thus cannot process alloy steel mainly composed of iron. Specifically, the hardness of the NCD diamond film is 100 GPa, and the hardness of the cBN film is 70 GPa to 80 GPa, which are generally considered to be the top two materials in terms of hardness, and the performance is more superior to the conventional TiN, AlTiN film with a hardness of 40 GPa to 45 GPa. Exemplarily, in terms of hardness, NCD is higher than cBN, and even relatively, NCD hardness is first, and cBN hardness is second, so when processing non-ferrous alloys with cutting tools having the film structure, the film structure comprising CrN-intermediate bonding layer-NCD can be directly used. However, since NCD is composed of carbon atoms, when processing ferrous alloys with cutting tools having the film structure, due to the chemical reaction between carbon and iron at high temperature processing, becoming cementite, i.e., iron carbide Fe3C, alloy steel cannot be processed, and cBN does not have carbon atoms, so cBN replaces NCD as the hardest film that can process alloy steel, for example, which can be used for cutting alloy steel; therefore, when processing alloy steel, cutting tools having a cBN film can be selected.

[0062] For the above embodiments with or without cBN, the same equipment can manufacture two kinds of functional films, and the difference between the two kinds of functional films is whether cBN is provided or not. The main purpose is whether the processed object is a ferrous alloy. As described above, if it is a ferrous alloy, the film structure with cBN is used, and if it is a non-ferrous alloy, the film structure without cBN is used. The embodiment with cBN is realized based on the NCD film. Because cBN is provided on the NCD, stable structural properties can be obtained. Specifically, in the embodiments of the present application, cBN is deposited on the NCD, and cBN cannot be directly deposited on chromium nitride or the intermediate bonding layer, otherwise the structural stability of the cBN film of the product will be affected.

[0063] In one embodiment, a cutting tool includes the film structure of any embodiment. In one embodiment, a cutting tool includes a cutting tool substrate and a film structure disposed on the cutting tool substrate, wherein the film structure is the film structure of any embodiment. As an example, the film structure is formed on the surface of the cutting tool substrate, such as cemented carbide, to obtain the cutting tool. In specific applications, the cutting tool is a tool, such as a blade, for realizing cutting functions, such as machining alloys. As an example, the cutting tool substrate is high speed steel or cemented carbide. As described above, when machining non-ferrous alloys, the cutting tool can use the film structure without cBN, that is, the outermost layer of the cutting tool and the film structure thereof is an NCD layer. When machining ferrous alloys, the cutting tool can use the film structure with cBN, that is, the outermost layer of the cutting tool and the film structure thereof is a cBN layer. Moreover, under the premise of ensuring the hardness of the outer layer of the cutting tool, by designing the chromium nitride with the intermediate bonding layer, the cobalt element on the surface of the cutting tool substrate will not affect the film formed by the nanocrystalline diamond, so that the cobalt element on the surface of the cemented carbide does not need to be removed, thereby avoiding the process of removing the cobalt element on the surface of the cemented carbide by chemical liquid under the premise of maintaining the smoothness of the tool surface.

[0064] In one embodiment, a method for manufacturing a cutting tool includes Figure 1As shown, the method for manufacturing a cutting tool includes the steps of: providing a cutting tool substrate; forming a preliminary bonding layer on the cutting tool substrate using an arc evaporation method, wherein the preliminary bonding layer includes one of CrN and TiN; forming an intermediate bonding layer on the preliminary bonding layer using the arc evaporation method, wherein the intermediate bonding layer includes at least one of an oxide film and an oxynitride film; and forming a nanocrystalline diamond film layer on the intermediate bonding layer using a microwave chemical deposition method. Exemplarily, the method for manufacturing a cutting tool is used to manufacture the cutting tool and the film structure of any of the embodiments.

[0065] In one of the embodiments, the method for manufacturing a cutting tool further includes the step of: forming a cubic boron nitride film layer on the nanocrystalline diamond film layer using a high-power pulsed magnetron sputtering method. Exemplarily, a method for manufacturing a cutting tool as shown in Figure 2 As shown, the method for manufacturing a cutting tool includes the steps of: providing a cutting tool substrate; forming a preliminary bonding layer on the cutting tool substrate using an arc evaporation method, wherein the preliminary bonding layer includes one of CrN and TiN; forming an intermediate bonding layer on the preliminary bonding layer using the arc evaporation method, wherein the intermediate bonding layer includes at least one of an oxide film and an oxynitride film; and forming a nanocrystalline diamond film layer on the intermediate bonding layer using a microwave chemical deposition method; and forming a cubic boron nitride film layer on the nanocrystalline diamond film layer using a high-power pulsed magnetron sputtering method. The remaining embodiments are similar, and are not described herein. Exemplarily, as a comparison, a traditional deposition method of cubic boron nitride uses an ECR electron cyclotron resonance, which produces a low-energy plasma and requires a long deposition time, and is only suitable for laboratory environments and is not suitable for industrial use. However, the present application uses a high-power pulsed sputtering principle to produce a high-energy boron-nitrogen plasma that can be used for industrial purposes. Compared with the traditional ECR electron cyclotron resonance method, the plasma density is 10 times different, so under the same deposition conditions, assuming that the ECR deposition requires 4 hours, the HiPIMS deposition time of the present application only needs 1 hour; this greatly improves the production efficiency of the cutting tool. The above design uses three plasma deposition methods, including an arc evaporation method, a high-power pulsed magnetron sputtering method, and a microwave chemical deposition method. In order to combine chromium nitride and an oxide film or an oxynitride film, an arc plasma method is used; polycrystalline diamond is deposited using a microwave chemical vapor deposition method, and a commonly used industrial hot wire method is not used to avoid high deposition temperatures, such as a deposition temperature of more than 1,000 degrees Celsius, which affects the diamond deposition substrate, such as a diamond deposition substrate including high-speed steel, a chromium nitride film, and an intermediate bonding layer.

[0066] In one of the embodiments, the manufacturing method of the cutting tool further comprises the step of forming a cubic boron nitride film layer on the nanocrystalline diamond film layer by using high power pulsed magnetron sputtering method, and the intermediate bonding layer comprises at least one of AlCrON, AlCrO and AlCrSiON. The remaining embodiments are similar, and thus are not described herein.

[0067] Illustratively, the manufacturing method of the cutting tool further comprises the step of pre-starting a vacuum furnace before forming the chromium nitride film layer on the cutting tool substrate by using arc evaporation method. In one of the embodiments, the manufacturing method of the cutting tool further comprises the step of cleaning the cutting tool substrate by using plasma method. That is, before forming the film, the cutting tool substrate, i.e. the plating workpiece, is cleaned by using plasma method. As an example, after pre-starting the vacuum furnace, the manufacturing method of the cutting tool further comprises the step of cleaning the cutting tool substrate by using plasma method. Illustratively, cleaning the cutting tool substrate by using plasma method comprises glow cleaning and ion cleaning.

[0068] By using the manufacturing method of the cutting tool, the present application further provides a manufacturing device of the cutting tool, which is implemented by using any of the manufacturing methods of the cutting tool. Since any of the manufacturing methods of the cutting tool is used, the manufacturing device of the cutting tool also has the beneficial technical effects of the manufacturing device of the cutting tool, which are not described herein.

[0069] In one of the embodiments, a manufacturing device of a cutting tool comprises a vacuum furnace, a heating device, a vacuum device, a high-power pulsed sputtering device, an arc evaporation device, a microwave generating device, a pulsed bias device, a gas flow control device and a temperature control device; the heating device, the vacuum device, the high-power pulsed sputtering device, the arc evaporation device, the microwave generating device, the pulsed bias device, the gas flow control device and the temperature control device are at least partially arranged in the inner cavity of the vacuum furnace; the heating device is used for heating the inner cavity; the vacuum device is used for vacuumizing the inner cavity and detecting the vacuum degree; the targets of the high-power pulsed sputtering device, the arc evaporation device and the microwave generating device are arranged in the inner cavity; the pulsed bias device is electrically connected with the high-power pulsed sputtering device, the arc evaporation device and the microwave generating device respectively; the gas flow control device is used for inputting gas into the inner cavity; the temperature control device is electrically connected with the heating device and is used for controlling the temperature of the inner cavity. It should be noted that the vacuum furnace, the heating device, the vacuum device, the high-power pulsed sputtering device, the arc evaporation device, the microwave generating device, the pulsed bias device, the gas flow control device and the temperature control device can be directly purchased from the market or self-made, and the specific improvements of these structures are not involved in the embodiments of the present application.

[0070] In one of the embodiments, the arc evaporation device is provided with one or two arc targets for depositing chromium nitride film and intermediate bonding layer; wherein the intermediate bonding layer comprises at least one of oxide film and oxynitride film; the microwave generating device is provided with at least one microwave guide, and the microwave generating device or the microwave generator thereof generates plasma on pure reaction gas through microwaves, i.e. the gas is plasmaized through the microwave generator, for depositing nanocrystalline diamond film; the high-power pulsed sputtering device is provided with one or two high-power pulsed sputtering targets for depositing cubic boron nitride film.

[0071] As an example, the manufacturing device of the cutting tool is provided with four targets, specifically comprising: one arc target, using arc evaporation source, the evaporation material is AlCr, the atomic ratio of the two is 70:30; or the evaporation material is AlCrSi, the atomic ratio of the three is 65:25:5. A set of microwave generators are used to deposit polycrystalline diamond. The other two are high-power pulsed sputtering targets for depositing cubic boron nitride film. For example, target 1 is Cr or Ti, target 2 is AlCr or AlCrSi, target 3 and target 4 are pure boron.

[0072] Alternatively, the manufacturing equipment of the cutting tool is provided with five targets, specifically including: two arc targets, using an arc evaporation source. A set of microwave generators is used to deposit polycrystalline diamond. Another two high-power pulsed sputtering targets are used to deposit cubic boron nitride film on the bonding layer and the diamond layer. For example, target 1 is Cr or Ti, target 2 and target 3 are at least one of AlCr and AlCrSi, and target 4 and target 5 are pure boron. For example, target 2 and target 3 are both AlCr or both AlCrSi.

[0073] In one of the embodiments, the inner wall of the vacuum furnace is provided with a cold water pipeline; for example, the vacuum furnace is embedded or protruded with a water pipe as the cold water pipeline on the inner wall thereof, or the vacuum furnace is provided with a sandwich on the inner wall thereof, and the sandwich is used as the cold water pipeline. In one of the embodiments, the temperature control device is provided with a furnace temperature control system and a cold water control system. For example, the manufacturing equipment of the cutting tool is provided with a stainless steel vacuum furnace, a high-temperature heating tube, a vacuum pumping system and a vacuum detection instrument, a high-power pulsed sputtering power supply, an arc power supply, a microwave generator power supply, a pulse bias power supply, a gas flow control system, a furnace temperature control system and a cold water control system, so as to finally achieve the goal of mass production of cubic boron nitride.

[0074] In one of the embodiments, the arc evaporation device is provided with an arc pure chromium pure titanium target and an arc aluminum silicon target; and / or, the high-power pulsed sputtering device is provided with a sputtering pure boron target. For example, the arc evaporation device is provided with an arc rectangular pure chromium pure titanium target and an arc rectangular aluminum silicon target; in one of the embodiments, the high-power pulsed sputtering device is provided with a cylindrical sputtering pure boron target; for example, the boron target material is a semiconductor material, which is an insulator at room temperature, and therefore needs to be heated to more than 400 degrees to have enough active electrons to achieve sputtering. When the sputtering reaction occurs, the temperature is lowered to generate enough active electrons, because when the current flows, the current moving on the surface of the material also generates temperature, so there is no need to use a heating tube to increase the temperature. In addition, the resistivity of pure boron crystal at room temperature is about 1000 ohm·cm to 100000 ohm·cm, but since boron is a semiconductor material, its resistance value decreases when the temperature rises, and when the temperature exceeds 300 degrees Celsius, it is less than 200 ohm·cm. This resistance value range is sufficient to generate current on the surface of pure boron. Therefore, the surface temperature of the cylindrical sputtering pure boron target can also be detected by the temperature control device or the circuit control device. For example, this embodiment uses a cylindrical sputtering pure boron target, which provides a rotating cylindrical sputtering target material in use. The utilization rate of a general rectangular target material is 30%, but the utilization rate of a cylindrical target material is as high as 85%, so it is beneficial to improve the utilization rate of the target material and adapt to the relatively high price of pure boron material. In other embodiments, a rectangular sputtering pure boron target or other shapes of sputtering pure boron targets can also be used.

[0075] Based on the manufacturing equipment of the cutting tool, in one embodiment, the application further provides a manufacturing method of the cutting tool, which is implemented based on the manufacturing equipment of the cutting tool in any of the embodiments, i.e. the manufacturing method of the cutting tool employs the manufacturing equipment of the cutting tool in any of the embodiments. Since the manufacturing equipment of the cutting tool in any of the embodiments is employed, the manufacturing method of the cutting tool also has the beneficial technical effects of the manufacturing equipment of the cutting tool, which are not repeated here.

[0076] The following illustrates a specific implementation of the manufacturing equipment of the cutting tool. In one embodiment, as shown in Figure 3 and Figure 4 , the manufacturing equipment of the cutting tool includes a stainless steel vacuum furnace 1 with an inner wall cold water system as the vacuum furnace, and a tool holder turntable 2 and a tool holder 3 are arranged in the stainless steel vacuum furnace 1, the tool holder 3 is arranged on the tool holder turntable 2 and used to fix a tool to be processed as a cutting tool base material; the tool holder 3 rotates with the tool holder turntable 2.

[0077] The manufacturing equipment of the cutting tool is also provided with a vacuum furnace door hinge 7, two furnace doors 8 and an opening door handle 11 to realize opening and closing of the doors in cooperation with the stainless steel vacuum furnace 1.

[0078] In combination with Figure 5 and Figure 6 , the manufacturing equipment of the cutting tool further includes a molecular pump and vacuum pumping system 4 as the vacuum device, which is located outside the stainless steel vacuum furnace 1 and connected to the stainless steel vacuum furnace 1, and is used to pump the inner cavity 28 of the stainless steel vacuum furnace 1 to vacuum.

[0079] In combination with Figure 9 and Figure 10 , the manufacturing equipment of the cutting tool further includes four groups of heating pipes 5 as the heating device, which are arranged in the inner cavity 28 of the stainless steel vacuum furnace 1 and used to heat the environment of the inner cavity 28 of the stainless steel vacuum furnace 1.

[0080] The manufacturing equipment of the cutting tool further includes four groups of reaction gas furnace inlet pipes 6 as the gas flow control device, which are connected to the inner cavity 28 of the stainless steel vacuum furnace 1 and used to input gas into the inner cavity 28.

[0081] In combination with Figure 7 and Figure 8, the manufacturing equipment of the cutting tool further comprises an electric arc rectangular pure chromium / titanium target 9, an electric arc rectangular aluminum silicon target 10 and four cylindrical sputtering pure boron targets 12 arranged in the inner cavity 28 of the stainless steel vacuum furnace 1, which are used to form corresponding deposits in the electric arc evaporation method and the high power pulsed magnetron sputtering method respectively. The electric arc rectangular pure chromium / titanium target 9 and the electric arc rectangular aluminum silicon target 10 are part of the electric arc evaporation device, and the cylindrical sputtering pure boron target 12 is part of the high power pulsed sputtering device.

[0082] Specifically, the manufacturing equipment of the cutting tool further comprises an electric arc evaporation device, which comprises an electric arc rectangular pure chromium / titanium target 9 and an electric arc rectangular aluminum silicon target 10, and further comprises a first electric arc pulse power supply 19 and a second electric arc pulse power supply 20 arranged outside the stainless steel vacuum furnace 1, the first electric arc pulse power supply 19 supplies power to the electric arc rectangular pure chromium / titanium target 9, and the second electric arc pulse power supply 20 supplies power to the electric arc rectangular aluminum silicon target 10.

[0083] The manufacturing equipment of the cutting tool further comprises a microwave generating device, which comprises a microwave outlet 13, a microwave conduit 14, a microwave main conduit 15 and a microwave generator 16 connected in sequence, wherein the microwave outlet 13, the microwave conduit 14 and the microwave main conduit 15 are arranged in the inner cavity 28 of the stainless steel vacuum furnace 1. The microwave outlet 13, the microwave conduit 14, the microwave main conduit 15 and the microwave generator 16 plasmaize the gas.

[0084] The manufacturing equipment of the cutting tool further comprises a pulse bias device, which comprises a bias pulse power supply 17 arranged outside the stainless steel vacuum furnace 1.

[0085] The manufacturing equipment of the cutting tool further comprises a high power pulsed sputtering device, which comprises two HiPIMS sputtering power supplies 18 arranged outside the stainless steel vacuum furnace 1.

[0086] The manufacturing equipment of the cutting tool further comprises a PLC automatic control system 21 as the temperature control device, which is arranged outside the stainless steel vacuum furnace 1.

[0087] The manufacturing equipment of the cutting tool further comprises a panel type industrial control computer 22, which is electrically connected with the tool clamp rotating disc 2, the molecular pump and vacuum pumping system 4, the heating tube 5, the microwave generator 16, the bias pulse power supply 17, the HiPIMS sputtering power supply 18, the first electric arc pulse power supply 19, the second electric arc pulse power supply 20 and the PLC automatic control system 21, etc. The panel type industrial control computer 22 is the general controller of the manufacturing equipment of the cutting tool, and realizes the specific process control of the manufacturing method of the cutting tool.

[0088] The manufacturing equipment of the cutting tool further comprises a weak current cabinet shell 23, the stainless steel vacuum furnace 1, the microwave generator 16, the bias pulse power supply 17, the HiPIMS sputtering power supply 18, the first arc pulse power supply 19, the second arc pulse power supply 20 and the PLC automatic control system 21 are arranged in the weak current cabinet shell 23, the molecular pump and the vacuum pumping system 4 are arranged outside the weak current cabinet shell 23, the panel type industrial control computer 22 is arranged on the weak current cabinet shell 23, and the furnace door 8 of the stainless steel vacuum furnace 1 is arranged on the weak current cabinet shell 23. The stainless steel vacuum furnace 1 can be directly opened or closed relative to the external environment by opening or closing the furnace door 8, without the need for additional opening or closing of other structures of the weak current cabinet shell 23.

[0089] The manufacturing equipment of the cutting tool further comprises a vacuum gauge, a gearbox 26 and a turntable motor 27, the gearbox 26 and the turntable motor 27 are arranged outside the weak current cabinet shell 23, the turntable motor 27 is drivingly connected to the gearbox 26, and an output rod of the gearbox 26 penetrates through the weak current cabinet shell 23 and is connected to the tool clamp turntable 2.

[0090] The vacuum gauge comprises a Penning vacuum gauge 24 and a Pinari vacuum gauge 25, the Penning vacuum gauge 24 and the Pinari vacuum gauge 25 have portions located outside the weak current cabinet shell 23 and portions located in the inner cavity 28 of the stainless steel vacuum furnace 1.

[0091] The prepared cutting tool is detected by an electron microscope, and the obtained photograph is as shown in Figure 11 , wherein the cutting tool substrate is a cemented carbide 100, the cutting tool substrate has a relatively uniform transition layer 200 on the substrate, the transition layer 200 is a composite layer of CrN and AlCrSiON, in other embodiments, the transition layer 200 can also be a composite layer of TiN, AlCrON and AlCrO. The nano-polycrystalline diamond layer 300, that is, the NCD layer or the NCD film layer, is on the transition layer 200, and the cubic boron nitride layer 400, that is, the cBN layer or the cBN film layer, is on the nano-polycrystalline diamond layer 300.

[0092] The cutting tool described in the above embodiment is detected by nano-hardness, and the obtained results are as shown in Figure 12 , which shows the relationship between force and indentation depth, and the position circled in the figure is where plastic deformation occurs. As can be seen from the figure, the pressure increases from 0 to 10 millinewton, and the indentation slowly increases to more than 90 nanometers but less than 100 nanometers. Thus, the nano-hardness value of the cutting tool can be calculated, and the hardness can reach 70 GPa to 80 GPa. As can be seen, the hardness of the cutting tool and the film structure thereof described in the present application can meet the design requirements.

[0093] The cutting tool described in the above embodiment is detected by Fourier transform infrared absorption spectroscopy, and the obtained results are as shown in Figure 13As shown, the characteristic wavelength of the cubic boron nitride film structure is obviously detected.

[0094] The following continues to illustrate the specific implementation of the manufacturing equipment and method of the cutting tool.

[0095] Exemplarily, the conditions for pre-starting the vacuum furnace include:

[0096] Furnace temperature: greater than 400°C; ideal furnace temperature greater than 450°C;

[0097] Vacuum degree: less than 9x10 -5 mbar; ideal vacuum degree less than 5x10 -5 mbar;

[0098] After the above conditions are reached, subsequent processes can be started.

[0099] Exemplarily, the conditions for glow cleaning include:

[0100] Gas: pure argon Ar, purity not less than 99.999%;

[0101] Furnace cavity pressure range: 8x10 -3 mbar to 5x10 -2 mbar;

[0102] Bias power supply: low voltage 300V to 350V; high voltage 650V to 750V;

[0103] Cleaning time: depending on the number of workpieces and the complexity of the shape, generally, the total time is about half an hour.

[0104] Exemplarily, the conditions for ion cleaning include:

[0105] Gas: pure argon Ar, purity not less than 99.999%;

[0106] Furnace cavity pressure: 5x10 -3 mbar;

[0107] Bias power supply: high voltage: 600V to 750V;

[0108] Chromium / titanium target: current 100A to 180A, pulse 5Hz to 1000Hz;

[0109] Cleaning time: depending on the number of workpieces and the complexity of the shape, generally, the total time is about 15 minutes;

[0110] Rotating disc speed: 6rpm to 8rpm.

[0111] In this way, the metal ion cleaning function can be realized.

[0112] Under the above preparation process, the CrN film is used as the basic bonding layer to achieve bonding between the film and the substrate, and its preparation is described below.

[0113] After ion cleaning, the chromium / titanium target continues to operate. At this time, nitrogen gas with a purity of not less than 99.999% is turned on and argon gas is turned off.

[0114] Nitrogen pressure at 5×10 -3 mbar to 1×10 -2 mbar range; turntable speed should be greater than 6 rpm if possible;

[0115] Bias power supply: 800V to 180V range;

[0116] Furnace temperature: greater than 400℃;

[0117] The deposition time depends on the number of workpieces, and the deposition thickness is generally in the range of about 0.2 micrometers.

[0118] Turntable speed: 6 rpm to 8 pm.

[0119] Under the premise of the above preparation process, the intermediate bonding layer, Cr / Ti+AlSiON layer or Cr / Ti+AlCON layer, is prepared as follows.

[0120] The chromium / titanium target continued operation, with the current increased to the range of 150A to 250A, the current pulse ranging from 5Hz to 1000Hz, and the nitrogen pressure maintained at 1×10⁻⁶. -2 mbar to 7×10 -2 Within the mbar range.

[0121] At this point, the AlSi target is activated; where Al:Si is 88:12 to 82:18; for example, the Al:Si atomic ratio is 88:12 or 82:18, depending on the workpiece shape and thin film requirements, the current is in the range of 150A to 250A, and the current pulse is in the range of 5Hz to 1000Hz.

[0122] At this point, a flow controller is used to control the oxygen flow rate, starting from 5 sccm and increasing by 1 sccm per minute until the pressure ratio of oxygen to nitrogen is O2:N2 = 40%:60%.

[0123] A transition layer thin film is formed as an intermediate bonding layer, with a thickness controlled at approximately 0.3 to 0.5 micrometers. The bias voltage is controlled within the range of 30V to 150V.

[0124] Furnace temperature: greater than 400℃.

[0125] Turntable speed: 6 rpm to 8 rpm.

[0126] Under the above preparation process, the polycrystalline nanodiamond layer, i.e. the nanocrystalline diamond film layer, is prepared as follows.

[0127] After the intermediate bonding layer is completed, the working state for manufacturing the intermediate bonding layer is maintained, CH4 gas with a purity of not less than 99.999% is opened, the flow rate thereof is controlled to be 5-10 sccm, and is maintained for 5-15 minutes.

[0128] Then, the arc power, N2 and O2 gas are closed, H2 gas with a purity of not less than 99.999% and CO2 gas with a purity of not less than 99.999% are opened, the ratio of H2:CH4:CO2 is maintained to be (80%-90%):(5%-10%):(5%-10%), and the total pressure of the gas is maintained to be in the range of 8x10 -3 mbar to 8x10 -2 mbar.

[0129] Then, the microwave generator is started, the output power is adjusted according to the workpiece and the deposition rate, and is generally 500 W to 5 kW or higher.

[0130] The bias power is in the range of 50 V to 200 V, the furnace temperature is greater than 400°C, and the rotation speed of the turntable is 6 rpm to 8 rpm.

[0131] The thickness of the polycrystalline nanodiamond layer is 0.3 μm to 0.5 μm.

[0132] Under the above preparation process, the preparation of the cubic boron nitride layer is as follows.

[0133] The process for manufacturing the polycrystalline nanodiamond layer is stopped, the furnace temperature is maintained to be greater than 450°C, and the cooling system of the pure boron target is stopped for about 5 minutes, which is adjusted according to the surface temperature of the target material, and then when the vacuum degree reaches 9x10 -5 mbar or lower, N2 is opened until the pressure in the furnace chamber is in the range of 5x10 -3 mbar to 8x10 -2 mbar, at which time the pure boron target has sufficient temperature to become a conductor.

[0134] Then, the cooling system of the pure boron target is started, and the bias power is adjusted to be in the range of 400 V to 600 V.

[0135] Then, argon and nitrogen are opened first, and the pressure in the furnace chamber is 8x10 -3 to 5x10 -2 mbar. Subsequently, the HiPIMS power is started, the argon output is in the range of 5 sccm to 30 sccm, and the argon output reaches the sputtering effect.

[0136] The power mode is adjusted to pulse 250 kHz to 350 kHz range, output asymmetric square wave, with reverse voltage to neutralize the target material accumulated voltage, the maximum output power is 5 kW.

[0137] Depending on the furnace cavity volume, the number of workpieces and deposition time, the deposition rate is generally adjusted to 1 micron / hour.

[0138] When sputtering occurs, the bias voltage is adjusted from a high voltage of 400V to 600V to a deposition voltage of 50V-150V, and the speed of the turntable is 6rpm to 8rpm.

[0139] When the deposition thickness is reached, all processes can be stopped, but the vacuum pumping work continues until the furnace temperature reaches 150℃.

[0140] At this time, the vacuum pumping system is turned off, after breaking the vacuum, the furnace door is opened to take out the workpiece deposited with cubic boron nitride.

[0141] At this point, the preparation of the cutting tool is completed.

[0142] It should be noted that other embodiments of the present application also include the technical features of the above embodiments, which are combined with each other to form an implementable thin film structure, cubic boron nitride thin film structure, cutting tool and its manufacturing method and equipment.

[0143] The technical features of the above-described embodiments can be combined in any way. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described, but as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present application.

[0144] The above-described embodiments only express several embodiments of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be noted that for ordinary skilled in the art, without departing from the concept of the present application, a number of variations and improvements can be made, which are within the scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A method for manufacturing a cutting tool, characterized in that, Including the following steps: Provide cutting tool base materials; An initial bonding layer is formed on the cutting tool substrate using an electric arc evaporation method; wherein the initial bonding layer includes one of CrN and TiN; wherein using CrN or TiN as the initial bonding layer between the cutting tool and the intermediate bonding layer is beneficial to enhancing adhesion and ensuring the isolation of NCD from the cutting tool; An intermediate bonding layer is formed on the preliminary bonding layer using an electric arc evaporation method; wherein the intermediate bonding layer comprises at least one of an oxide film and a nitrogen-oxygen film; A single layer of nano-polycrystalline diamond film was formed on the intermediate bonding layer using microwave chemical deposition. A single cubic boron nitride film layer was formed on the nanocrystalline diamond film layer using a high-power pulsed magnetron sputtering method.

2. The method for manufacturing the cutting tool according to claim 1, characterized in that, It also includes the step of: the intermediate bonding layer comprising at least one of AlCrON, AlCrO and AlCrSiON.

3. The method for manufacturing the cutting tool according to claim 1, characterized in that, It also includes the step of cleaning the cutting tool substrate using a plasma method.

4. A cutting tool, characterized in that, The cutting tool is manufactured using the manufacturing method of any one of claims 1 to 3; the cutting tool includes a cutting tool substrate and a thin film structure, wherein the thin film structure is disposed on the cutting tool substrate.

5. A manufacturing apparatus for cutting tools, characterized in that, It includes a vacuum furnace, heating device, vacuum device, high-power pulse sputtering device, arc evaporation device, microwave generator, pulse bias device, gas flow control device, and temperature control device; The heating device, the vacuum device, the high-power pulse sputtering device, the arc evaporation device, the microwave generator, the pulse bias device, the gas flow control device, and the temperature control device are all at least partially disposed in the inner cavity of the vacuum furnace; The heating device is used to heat the inner cavity; The vacuum device is used to evacuate the inner cavity and detect the vacuum level. The target of the high-power pulse sputtering device, the target of the arc evaporation device, and the output end of the microwave generator are disposed in the inner cavity; The pulse bias device is electrically connected to the high-power pulse sputtering device, the arc evaporation device, and the microwave generator, respectively. The gas flow control device is used to input gas into the inner cavity; The temperature control device is electrically connected to the heating device and is used to control the temperature of the inner cavity; The arc evaporation apparatus is equipped with one or two arc targets for depositing a preliminary bonding layer and an intermediate bonding layer; wherein the preliminary bonding layer includes one of CrN and TiN, and the intermediate bonding layer includes at least one of an oxide film and a nitrogen-oxygen film; wherein CrN or TiN is used as the preliminary bonding layer between the cutting tool and the intermediate bonding layer to enhance adhesion and ensure the isolation of NCD from the cutting tool. The microwave generating device is provided with at least one microwave exporter for depositing only one layer of nano-polycrystalline diamond film on the intermediate bonding layer. The high-power pulse sputtering device is equipped with one or two high-power pulse sputtering targets for depositing a single cubic boron nitride film on the nanocrystalline diamond film layer.

6. The manufacturing equipment for the cutting tool according to claim 5, characterized in that, The inner wall of the vacuum furnace is equipped with cold water pipes.

7. The manufacturing equipment for the cutting tool according to claim 5, characterized in that, The electric arc evaporation device is equipped with an electric arc pure chromium pure titanium target and an electric arc aluminum silicon target.

8. The manufacturing equipment for the cutting tool according to claim 5, characterized in that, The high-power pulse sputtering device is equipped with a pure boron sputtering target.

9. The manufacturing equipment for the cutting tool according to claim 5, characterized in that, The temperature control device is equipped with a furnace temperature control system and a cold water control system.

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