Image rendering method and rendering system

Abstract

The invention discloses an image rendering method and system. The rendering method at least comprises the following steps: providing a plurality of magnetic tunnel junctions; integrating and packaging the plurality of magnetic tunnel junctions to obtain a magnetic random access memory; applying a pulse voltage to the magnetic random access memory to generate a true random number; and using the true random number to calculate a scattering model, and rendering the image. Through the image rendering method and system provided by the invention, the high-quality true random number can be efficiently generated, so that the image rendering efficiency and effect are improved, and the rendered image is more vivid and natural.

Description

Technical Field

[0001] The present invention relates to the technical field of computer image processing, and in particular to an image rendering method and a rendering system. Background Art

[0002] True random numbers are used as the calculation basis of the light scattering model to simulate the scattering behavior of light on the surfaces of different materials. Their quality seriously affects the simulation results, and thus determines the realism and rendering efficiency of the image. However, the current random number generators that generate true random numbers have problems such as slow speed, high energy consumption and low random number quality, which significantly damage the quality and effect of image rendering. Therefore, high-quality true random numbers are urgently needed to simulate the propagation and scattering behavior of light in complex scenes to improve the realism and rendering efficiency of the image. Summary of the invention

[0003] In view of the shortcomings of the prior art described above, the object of the present invention is to provide an image rendering method and rendering system, which can efficiently generate high-quality true random numbers, thereby improving the efficiency and effect of image rendering, and making the rendered image more realistic and natural.

[0004] To solve the above technical problems, the present invention is implemented through the following technical solutions.

[0005] The present invention provides an image rendering method, which at least comprises the following steps:

[0006] providing a plurality of magnetic tunnel junctions;

[0007] Integrating and packaging a plurality of the magnetic tunnel junctions to obtain a magnetic random access memory;

[0008] applying a pulse voltage to the magnetic random access memory to generate true random numbers; and

[0009] The true random number calculation scattering model is used to render the image.

[0010] In one embodiment of the present invention, generating the true random number comprises at least the following steps:

[0011] Applying an operating voltage to the magnetic random access memory, and the magnetic random access memory performing a write-0 operation;

[0012] Applying a pulse voltage to the magnetic random access memory, and the magnetic random access memory performing a write 1 operation;

[0013] Under the operating voltage, reading the storage information of the magnetic random access memory to obtain a true random number; and

[0014] The operations of writing 0, writing 1 and reading are repeated to obtain a plurality of true random numbers.

[0015] In one embodiment of the present invention, the pulse voltage is a square wave pulse voltage, a sawtooth pulse voltage or a step wave pulse voltage.

[0016] In one embodiment of the present invention, the pulse voltage is a square wave pulse voltage, the amplitude of the pulse voltage is 1.85V-2.25V, and the width of the pulse voltage is 50ns-500ns.

[0017] In one embodiment of the present invention, calculating the scattering model comprises at least the following steps: calculating the reflection, refraction and shadow of light according to the true random number and the ray tracing algorithm to obtain a rendered image.

[0018] In one embodiment of the present invention, the magnetic tunnel junction at least includes:

[0019] Top floor;

[0020] a free layer disposed on the top layer;

[0021] A tunnel layer, disposed on the free layer;

[0022] A fixed layer, arranged on the tunnel layer;

[0023] A spacer layer, disposed on the fixed layer;

[0024] a pinning layer disposed on the spacer layer; and

[0025] The antiferromagnetic layer is disposed on the pinned layer.

[0026] In one embodiment of the present invention, the material of the free layer and the fixed layer includes a ternary alloy material consisting of cobalt, iron and boron, and the material of the tunnel layer includes magnesium oxide.

[0027] In one embodiment of the present invention, the material of the top layer includes tantalum, and the material of the spacer layer includes ruthenium.

[0028] The present invention also provides an image rendering system, characterized in that it at least comprises:

[0029] A magnetic random access memory comprising a plurality of magnetic tunnel junctions;

[0030] A programmable gate array, communicatively connected to the magnetic random access memory, and issuing read and write commands to the magnetic random access memory;

[0031] a pulse generator, electrically connected to the magnetic random access memory, and applying a pulse voltage to the magnetic random access memory; and

[0032] A rendering module is communicatively connected to the magnetic random access memory.

[0033] In one embodiment of the present invention, the programmable gate array provides a clock signal, a command instruction and an enable signal to the magnetic random access memory, and exchanges data signals with the magnetic random access memory.

[0034] In summary, the present invention provides an image rendering method and rendering system, which uses the generated high-quality true random numbers for the scattering model, can more accurately simulate the light behavior in the real scene, thereby improving the image detail performance, and can also greatly reduce the artifact phenomenon caused by the insufficient quality of the true random numbers, making the rendered image more realistic and natural. Moreover, the rendering method provided by the present invention can improve the efficiency of image rendering and provide a new technical approach for dynamic rendering in virtual reality and augmented reality.

[0035] Of course, any method of implementing the present invention does not necessarily need to achieve all of the advantages mentioned above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0037] Figure 1 FIG. 4 is a schematic diagram of a magnetic tunnel junction and an analyzer in one embodiment of the present invention.

[0038] Figure 2 for Figure 1 Schematic diagram of the test results of the magnetic tunnel junction.

[0039] Figure 3 FIG. 4 is a structural diagram of an image rendering system in one embodiment of the present invention.

[0040] Figure 4 The figure is a flowchart of a method for rendering an image in one embodiment of the present invention.

[0041] Figure 5 It is a schematic diagram of testing the writing success rate of a magnetic random access memory according to an embodiment of the present invention.

[0042] Figure 6 This is a diagram showing the results of testing the quality of true random numbers in one embodiment of the present invention.

[0043] Figure 7 This is an effect diagram of an image obtained by using the rendering method provided by the present invention.

[0044] Description of labels:

[0045] 10. Magnetic tunnel junction; 101. Top layer; 102. Free layer; 103. Tunnel layer; 104. Fixed layer; 105. Spacer layer; 106. Pinned layer; 107. Antiferromagnetic layer; 20. Analyzer; 30. Magnetic random access memory; 40. Programmable gate array; 50. Pulse generator; 60. Rendering module. DETAILED DESCRIPTION

[0046] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0047] It should be understood that the present invention can be implemented in different forms and should not be interpreted as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the present invention to those skilled in the art.

[0048] The technical solution of the present invention is further described in detail below in conjunction with the embodiments and drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0049] In the rendering process of computer images, especially when calculating scattering models, a large number of true random numbers are needed to simulate the scattering behavior of light on the surfaces of different materials, which puts forward higher requirements on the energy consumption, speed and random number quality of random number generators (RNG). Among them, RNG, as a key component in modern information technology, is widely used in data encryption, hardware security, physical unclonable functions and statistical analysis. It usually uses methods such as thermal noise or oscillator jitter to generate true random numbers, but these methods have high energy consumption, low generation speed, poor quality of true random numbers, large generator area and complex circuits, which are not conducive to the rendering of computer images. The present invention provides an image rendering method and rendering system, which generates high-quality true random numbers through magnetic tunnel junctions and applies them to image rendering, which can improve the efficiency and effect of image rendering and make the rendered image more realistic and natural.

[0050] See also Figure 1 and Figure 3 As shown, the present invention provides an image rendering system, which at least includes a magnetic random access memory (MRAM) 30, a programmable gate array (FPGA) 40, a pulse generator 50, and a rendering module 60. The magnetic random access memory 30 includes a plurality of magnetic tunnel junctions (MTJ) 10, the programmable gate array 40 is connected to the magnetic random access memory 30 for communication, and sends a read and write command to the magnetic random access memory 30, the pulse generator 50 is electrically connected to the magnetic random access memory 30, and provides a pulse voltage to the magnetic random access memory 30, and the rendering module 60 is connected to the magnetic random access memory 30 for communication. In the image rendering system provided by the present invention, due to the pulse voltage generated by the pulse generator 50, the magnetization direction of the ferromagnetic layer in the magnetic tunnel junction 10 changes randomly, so that the resistance of the magnetic tunnel junction 10 device randomly presents a high and low resistance state, and thereby represents a binary random number, thereby obtaining a high-quality true random number, and then the true random number is applied to the scattering model to render the image, so as to improve the rendering efficiency and rendering effect of the image.

[0051] See also Figure 1 and Figure 3 As shown, in one embodiment of the present invention, the magnetic random access memory 30 includes, for example, a plurality of magnetic tunnel junctions 10. The plurality of magnetic tunnel junctions 10 are interconnected, and each magnetic tunnel junction 10 includes, for example, a top layer 101, a free layer 102, a tunnel layer 103, a fixed layer 104, a spacer layer 105, a pinned layer 106, and an antiferromagnetic layer 107, etc. The present invention does not limit the relative size between the layers, and the sizes can be selected according to actual needs. In this embodiment, the material of the top layer 101 includes, for example, at least one of oxidation-resistant materials such as tantalum. The top layer 101 is provided to protect the free layer 102 from being affected by the external environment and to prevent the free layer 102 from oxidation or other chemical reactions.

[0052] See also Figure 1 As shown, in one embodiment of the present invention, the free layer 102 is disposed on the top layer 101. The material of the free layer 102 includes, for example, at least two of ferromagnetic materials such as cobalt, iron, nickel, manganese, platinum, gold, aluminum, silicon, zirconium or boron. In this embodiment, the material of the free layer 102 includes, for example, a ternary alloy material composed of cobalt, iron and boron. Under the action of an external magnetic field or current, the magnetization direction of the free layer 102 can be flipped, thereby realizing the storage or reading of data in the magnetic random access memory 30.

[0053] See also Figure 1As shown, in one embodiment of the present invention, the tunnel layer 103 is disposed on the free layer 102. The material of the tunnel layer 103 includes, for example, at least one of insulating materials such as aluminum oxide and magnesium oxide. In this embodiment, the material of the tunnel layer 103 includes, for example, magnesium oxide to improve the tunneling characteristics and tunneling magnetoresistance coefficient of the tunnel layer 103. By setting the tunnel layer 103 as a tunneling barrier for electrons, electrons can pass through the tunnel layer 103 through the tunneling effect, thereby generating a magnetoresistance effect.

[0054] See also Figure 1 As shown, in one embodiment of the present invention, the fixed layer 104 is arranged on the tunnel layer 103. The material of the fixed layer 104 includes at least two of ferromagnetic materials such as cobalt, iron, nickel, manganese, platinum, gold, aluminum, silicon, zirconium or boron. In this embodiment, the material of the fixed layer 104 includes, for example, a ternary alloy material composed of cobalt, iron and boron. Under the action of an external magnetic field or current, the magnetization direction of the fixed layer 104 is fixed and does not change. The fixed layer 104 is used as a reference layer to achieve magnetic contrast when reading and writing data.

[0055] See also Figure 1 As shown, in one embodiment of the present invention, a spacer layer 105 is disposed on the fixed layer 104. The material of the spacer layer 105 includes, for example, ruthenium and the like. The spacer layer 105 is provided to separate the fixed layer 104 and the pinned layer 106, thereby forming an antiferromagnetic coupling structure, so that the magnetization direction of the fixed layer 104 remains unchanged, and the magnetization direction of the fixed layer 104 is not easily affected by an external magnetic field or current.

[0056] See also Figure 1 As shown, in one embodiment of the present invention, the pinned layer 106 is disposed on the spacer layer 105. The material of the pinned layer 106 includes, for example, a cobalt iron layer and the like. The pinned layer 106 and the spacer layer 105 form an antiferromagnetic coupling structure to enhance the magnetization strength and magnetization direction stability of the fixed layer 104, thereby ensuring that the magnetization direction of the fixed layer 104 is not easily affected by an external magnetic field or current.

[0057] See also Figure 1 As shown, in one embodiment of the present invention, the antiferromagnetic layer 107 is disposed on the pinned layer 106. The material of the antiferromagnetic layer 107 includes, for example, a platinum manganese layer and the like. By arranging the antiferromagnetic layer 107 and the pinned layer 106 to form an exchange bias structure, the magnetization direction of the fixed layer 104 is stabilized, ensuring that the magnetization direction of the fixed layer 104 is not easily affected by an external magnetic field or current.

[0058] See also Figure 1 and Figure 2As shown, in one embodiment of the present invention, for example, an analyzer 20 is used to test the magnetic tunnel junction 10 to determine the performance of the magnetic tunnel junction 10. The magnetic tunnel junction 10 is electrically connected to the analyzer 20, one end of the analyzer 20 is electrically connected to the top layer 101, and the other end is electrically connected to the antiferromagnetic layer 107. In this embodiment, the analyzer 20 is, for example, a semiconductor parameter analyzer, etc. The analyzer 20 applies a pulse voltage to the magnetic tunnel junction 10 and measures the current of the magnetic tunnel junction 10. Specifically, the analyzer 20 applies a first square wave pulse voltage with an amplitude of, for example, 0.6V and a width of, for example, 100ns to the magnetic tunnel junction 10, and at the same time, the magnetic tunnel junction 10 performs a write-0 operation, and then reads the information of the magnetic tunnel junction 10 at a constant voltage of, for example, 0.05V. Then the analyzer 20 applies a second square wave pulse voltage with an amplitude of, for example, -0.5V and a width of, for example, 100ns to the magnetic tunnel junction 10, and at the same time the magnetic tunnel junction 10 performs a write 1 operation, and then reads the information of the magnetic tunnel junction 10 at, for example, a constant voltage of 0.05V. Moreover, the analyzer 20 measures the current of the magnetic tunnel junction 10 during the entire test process, and calculates the resistance of the magnetic tunnel junction 10 device based on the current and voltage. The specific results are as follows: Figure 2 See Figure 2 As shown, after applying the first square wave pulse voltage, the resistance of the magnetic tunnel junction 10 device is about 3KΩ, and after applying the second square wave pulse voltage, the resistance of the magnetic tunnel junction 10 device is about 7.5KΩ, which indicates that: under the action of the pulse voltage, the magnetization direction of the free layer 102 in the magnetic tunnel junction 10 can be randomly changed through the spin transfer torque (STT) mechanism, so that the resistance of the magnetic tunnel junction 10 device randomly presents a high and low configuration, thereby representing a binary random number, and generating a high-quality true random number.

[0059] See also Figure 1 and Figure 3 As shown, in one embodiment of the present invention, the programmable gate array 40 is connected to the magnetic random access memory 30 for communication. Specifically, the programmable gate array 40 can provide the magnetic random access memory 30 with a clock signal clk, a command instruction in, and an enable signal CE, and can exchange data with the magnetic random access memory 30. The command instruction in is, for example, a write instruction or a read instruction. In this embodiment, the pulse generator 50 is electrically connected to the magnetic random access memory 30 to provide a pulse voltage to the magnetic random access memory 30. By setting the programmable gate array 40 and the pulse generator 50, while the magnetic random access memory 30 executes the command instruction in, the pulse generator 50 applies a pulse voltage to the magnetic random access memory 30, so that the magnetic tunnel junction 10 in the magnetic random access memory 30 is probability flipped to generate a true random number.

[0060] See also Figure 1 and Figure 3 As shown, in one embodiment of the present invention, the rendering module 60 is in communication with the magnetic random access memory 30. Specifically, the true random numbers generated by the magnetic random access memory 30 are transmitted to the rendering module 60, and the rendering module 60 calculates the scattering model according to the true random numbers and renders the image.

[0061] See also Figure 1 , Figure 3 and Figure 4 As shown, based on the above image rendering system, the present invention further provides an image rendering method, which at least includes steps S11-S14.

[0062] S11. Provide a plurality of magnetic tunnel junctions.

[0063] S12. Integrate and package multiple magnetic tunnel junctions to obtain a magnetic random access memory.

[0064] S13, applying a pulse voltage to the magnetic random access memory to generate true random numbers.

[0065] S14. Calculate the scattering model using true random numbers and render the image.

[0066] See also Figure 1 , Figure 3 and Figure 4 As shown, in one embodiment of the present invention, in step S11, the magnetic tunnel junction 10 includes a top layer 101, a free layer 102, a tunnel layer 103, a fixed layer 104, a spacer layer 105, a pinned layer 106 and an antiferromagnetic layer 107, etc., which are sequentially arranged along the same direction. Specifically, each layer in the magnetic tunnel junction 10 is prepared, for example, by a thin film deposition method, and then, for example, a magnetic tunnel junction 10 array is formed by techniques such as photolithography and etching to obtain a plurality of magnetic tunnel junctions 10. Among them, the thin film deposition method includes, for example, one or a combination of magnetron sputtering, atomic layer deposition, chemical vapor deposition, electron beam evaporation and pulsed laser deposition.

[0067] See also Figure 1 , Figure 3 and Figure 4 As shown, in one embodiment of the present invention, after obtaining the magnetic tunnel junction 10, in step S12, multiple magnetic tunnel junctions 10 are integrated into a chip and packaged to obtain a magnetic random access memory 30. Among them, multiple magnetic tunnel junctions 10 are interconnected through interconnection lines, and the magnetic random access memory 30 is communicated with the programmable gate array 40 through a peripheral circuit. By integrating multiple magnetic tunnel junctions 10, not only can the magnetic random access memory 30 store and read data efficiently, but also the energy consumption of the magnetic random access memory 30 can be reduced and the density of the magnetic random access memory 30 can be improved.

[0068] See also Figure 1 , Figure 3 and Figure 4 As shown, in one embodiment of the present invention, after obtaining the magnetic random access memory 30, in step S13, the pulse generator 50 is electrically connected to the magnetic random access memory 30, the pulse generator 50 provides a pulse voltage for the magnetic random access memory 30, and the programmable gate array 40 is connected to the magnetic random access memory 30 for communication, so as to generate a true random number. Specifically, a working voltage is applied to the magnetic random access memory 30, the programmable gate array 40 issues a write instruction, and the magnetic random access memory 30 performs a write 0 operation, then the pulse generator 50 applies a pulse voltage to the magnetic random access memory 30, and the programmable gate array 40 issues a write instruction, and the magnetic random access memory 30 performs a write 1 operation, then the working voltage is applied to the magnetic random access memory 30, the programmable gate array 40 issues a read instruction, and the storage information in the magnetic random access memory 30 is read to obtain a true random number, and then the operations of writing 0, writing 1 and reading are repeated to obtain multiple true random numbers. Wherein, the pulse voltage is, for example, a square wave pulse voltage, a sawtooth pulse voltage or a step wave pulse voltage. In this embodiment, the working voltage is, for example, a constant value, such as 3V-3.5V, the pulse voltage is, for example, a square wave pulse voltage, the amplitude of the pulse voltage is, for example, 1.85V-2.25V, and the width of the pulse voltage is, for example, 50ns-500ns.

[0069] See also Figure 1 , Figure 3 and Figure 4 As shown, in one embodiment of the present invention, after obtaining the true random number, in step S14, the scattering model is calculated using the true random number to render the image. Specifically, during rendering, a ray of light is emitted from the camera to each pixel in the scene, and the direction of each ray of light is determined. When the light intersects the surface of the object, the true random number is used to determine the direction of scattering, reflection and refraction. For example, for a rough surface, the scattering angle is not completely determined, and the true random number is used to calculate the offset angle in different directions to simulate the light scattering of the surface of the real object. After each light scattering, reflection or transmission, the intensity of the light will be attenuated according to parameters such as surface characteristics, medium refractive index, scattering model, etc. Random numbers are used to select different scattering directions and reflection ratios to ensure the randomness and realism of each light interaction. In this embodiment, the true random number is used, for example, in the ray tracing algorithm of the Monte Carlo method to calculate the reflection, refraction and shadow of the light, and accurately simulate the propagation and scattering behavior of the light in a complex scene. By using high-quality true random numbers for image rendering, not only can the image details be improved, but also the artifacts caused by insufficient quality of true random numbers can be greatly reduced, making the rendered image more realistic and delicate, while significantly improving the efficiency of image rendering.

[0070] See also Figures 3 to 5 As shown, in one embodiment of the present invention, the ground terminal voltage V of the magnetic random access memory 30 is tested. SS Specifically, for example, testing V at 10 different addresses SS And write success rate, the address is for example 10 addresses evenly distributed between 0-235926, the test results are as follows Figure 5 As shown. Figure 5 It can be seen that when Vss drops below 2.35V, the write success rate begins to be affected. When Vss is 1.85V, the write success rate drops to 0. When Vss is between 1.85V and 2.35V, the success rate of writing data is random. This random write failure is not caused by the failure of the logic circuit under low voltage, because the magnetic random access memory 30 can still receive and output the read signal under low voltage, indicating that the logic circuit is working normally.

[0071] See also Figure 3 , Figure 4 and Figure 6 As shown, in one embodiment of the present invention, the quality of the true random numbers generated by the magnetic random access memory 30 is tested, for example, by NIST-800. Specifically, the magnetic random access memory 30 repeatedly performs the operations of writing 0, writing 1, and reading at one address to obtain a plurality of true random numbers as original data, and at the same time, a plurality of groups of random numbers are obtained as comparison data by pseudo-random number generation algorithms such as single XOR (exclusive OR instruction), double XOR, triple XOR, linear congruential (LCG), and Mersenne rotation, and then the original data and the comparison data are tested by NIST-800, and the test results are shown as follows: Figure 6As shown. Among them, the number of test items in the NIST-800 test is, for example, 15, and the 15 test items are, in order, frequency test (monobit test), frequency within block test (frequency within block test), run test (runs test), longest run ones in a block test (longest run ones in a block test), binary matrix rank test (binary matrix rank test), discrete Fourier transform test (discrete Fourier transform test, DFT), non-overlapping template matching test (non-overlapping template matching test), overlapping template matching test (Overlapping template matching test), Maurers universal test (Maurers universal test), linear complexity test (linear complexity test), serial test (serial test), approximate entropy test (approximate entropy test), cumulative sums test (cumulative sums test), random excursion test (random excursion test) and random excursion variant test (random excursion variant test). The test data in the three test items of binarymatrix rank test, Maurers universal test and linear complexity test are, for example, a whole segment of 1Mb data, and the test data in the other test items are, for example, 8000 segments of 128 bits of data. The test results are as follows: Figure 6 As shown. Figure 6 It can be seen that, in the original data, the test data of the monobit test, the frequency withinblock test, the non-overlapping template matching test and the cumulative sums test are all greater than 0.96, indicating that the quality of the true random numbers generated by the magnetic random access memory 30 is good.

[0072] See also Figure 3 , Figure 4 and Figure 7As shown, in one embodiment of the present invention, true random numbers are applied to the ray tracing algorithm to render images. In this embodiment, according to the simulation of the ray tracing algorithm, the illumination model error is 13.98, which is less than 15, indicating that the true random numbers provided by the present invention have a good effect in the image rendering process and are conducive to improving the visual effect of the rendered image.

[0073] In summary, the present invention provides an image rendering method and rendering system, which generates high-quality true random numbers by applying a pulse voltage to a magnetic random access memory, and uses the true random numbers to calculate a scattering model to improve the image rendering effect and obtain a vivid and delicate rendered image. Moreover, the rendering method and rendering system provided by the present invention can improve the efficiency of real-time image rendering through high-quality true random numbers and ray tracing algorithms, and provide a new technical approach for high-quality dynamic rendering in virtual reality and augmented reality.

[0074] The embodiments of the present invention disclosed above are only used to help illustrate the present invention. The embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A method for rendering an image, characterized in that: At least the following steps are included: providing a plurality of magnetic tunnel junctions; Integrating and packaging a plurality of the magnetic tunnel junctions to obtain a magnetic random access memory; Applying a pulse voltage to the magnetic random access memory to generate true random numbers; as well as The true random number calculation scattering model is used to render the image.

2. The rendering method according to claim 1, characterized in that: Generating the true random number comprises at least the following steps: Applying an operating voltage to the magnetic random access memory, and the magnetic random access memory performing a write-0 operation; Applying a pulse voltage to the magnetic random access memory, and the magnetic random access memory performing a write 1 operation; Under the operating voltage, reading the storage information of the magnetic random access memory to obtain a true random number; and The operations of writing 0, writing 1 and reading are repeated to obtain a plurality of true random numbers.

3. The rendering method according to claim 1, characterized in that: The pulse voltage is a square wave pulse voltage, a sawtooth pulse voltage or a step wave pulse voltage.

4. The rendering method according to claim 1, characterized in that: The pulse voltage is a square wave pulse voltage, the amplitude of the pulse voltage is 1.85V-2.25V, and the width of the pulse voltage is 50ns-500ns.

5. The rendering method according to claim 1, characterized in that: Calculating the scattering model includes at least the following steps: calculating the reflection, refraction and shadow of light according to the true random number and the ray tracing algorithm to obtain a rendered image.

6. The rendering method according to claim 1, characterized in that: The magnetic tunnel junction comprises at least: Top floor; a free layer disposed on the top layer; A tunnel layer, disposed on the free layer; A fixed layer, arranged on the tunnel layer; A spacer layer, disposed on the fixed layer; a pinning layer disposed on the spacer layer; and The antiferromagnetic layer is disposed on the pinned layer.

7. The rendering method according to claim 6, characterized in that: The materials of the free layer and the fixed layer include a ternary alloy material consisting of cobalt, iron and boron, and the material of the tunnel layer includes magnesium oxide.

8. The rendering method according to claim 6, characterized in that: The material of the top layer includes tantalum, and the material of the spacer layer includes ruthenium.

9. An image rendering system, characterized in that: At least: A magnetic random access memory comprising a plurality of magnetic tunnel junctions; A programmable gate array, communicatively connected to the magnetic random access memory, and issuing read and write commands to the magnetic random access memory; a pulse generator, electrically connected to the magnetic random access memory, and applying a pulse voltage to the magnetic random access memory; as well as A rendering module is communicatively connected to the magnetic random access memory.

10. The rendering system according to claim 9, characterized in that: The programmable gate array provides a clock signal, a command instruction, and an enable signal to the magnetic random access memory, and exchanges a data signal with the magnetic random access memory.

Images